A packaging system based on aperture compensation and compensation method and system thereof

Abstract

The present invention relates to the field of semiconductors, and in particular to a packaging system based on aperture compensation and a compensation method and system thereof, wherein the packaging system comprises: a mother sheet; a first stacking portion arranged thereon, the first stacking portion comprising a plurality of first grain layers, comprising: a first edge region arranged along the edge of the mother sheet, and a first central region arranged along the central region of the mother sheet, the first edge region being provided with at least one column of first edge grains, the first central region being provided with first central grains, and the first edge region and the first central region being arranged with multiple columns of first spacing grains at intervals; the through-hole sizes D1, D2, and D3 of the first edge grains, the spacing grains, and the central grains satisfy the rule: D1≥D2, D1>D3; the present invention proposes a limited grading based on the three categories of edge, spacing region, and central region, and the aperture differentiation setting scheme realized. The restrictive difference setting scheme improves the overall yield of semiconductor devices through local strength adjustment.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor packaging, and in particular to a packaging system based on aperture compensation and a compensation method and system thereof. Background Art

[0002] Integrated circuits in semiconductor devices are generally manufactured on a wafer and then cut into individual small crystals. Based on the need to reduce costs through mass production, the size of wafers has gradually developed from the early four-inch and six-inch sizes to eight-inch, twelve-inch, and even sixteen-inch sizes. In addition, after the integrated circuit is completed, it is often necessary to grind the back of the wafer and then cut it into crystals. The thickness of the crystals can be reduced to meet the specifications of high-density or thin packaging. The yield of the wafer is crucial to the working performance of the semiconductor device. However, the wafer is prone to edge bending during the production stacking process, which will lead to an increase in defects on the wafer.

[0003] Referring to the patent application for optimizing the curvature of a wafer with the application publication number CN108110043A, a method for optimizing the curvature of a wafer is disclosed, wherein: a wafer is provided, a crystal face SiN is formed on the front side of the wafer, a crystal back SiN is formed on the back side of the wafer, and the crystal face SiN and the crystal back SiN are formed in the same furnace tube process; the front side of the wafer is processed to form a protective layer resistant to acid corrosion on the front side; under the protection of the protective layer, an acid is used to remove at least a portion of the crystal back SiN. The method adjusts the curvature of the wafer, and then expects to improve the quality of subsequent process steps such as bonding by reducing and adjusting the curvature of the wafer.

[0004] However, the applicant noted that although the traditional solution has made optimizations in the wafer processing technology, with the continuous development of semiconductor technology, especially when the number of wafer layers of semiconductor devices reaches a certain number and the circuit structure on the wafer becomes more and more complex, it is still very easy to bend at the edge and cause defects.

[0005] Therefore, a method is currently being developed to reduce bending defects during stacking. Summary of the invention

[0006] The object of the present invention is to provide a packaging system based on aperture compensation and a compensation method and system thereof, which can partially solve or alleviate the above-mentioned deficiencies in the prior art and can perform differentiated aperture settings through limited area classification.

[0007] In order to solve the above-mentioned technical problems, the present invention specifically adopts the following technical solutions:

[0008] A first aspect of the present invention is to provide a packaging system based on aperture compensation, comprising:

[0009] A mother sheet, on which a plurality of transmission interfaces are arranged at intervals, the transmission interfaces are used to be electrically connected to through holes of the crystal grains stacked thereon, and the crystal grains of two adjacent layers are electrically connected through the through holes;

[0010] A first stacking portion is arranged on the mother sheet, wherein the first stacking portion comprises: a plurality of first grain layers, one grain layer comprises: a plurality of the grains distributed at intervals; and the first grain layer comprises: a first edge region arranged along the edge of the mother sheet, and a first central region arranged along the central region of the mother sheet, wherein the first edge region is provided with at least one column of first edge grains, the first central region is provided with at least one column of first central grains, and a plurality of columns of first spacer grains are arranged at intervals between the first edge region and the first central region;

[0011] The first through hole size D1, the second through hole size D2, and the third through hole size D3 of the first edge grain, the first spacer grain, and the first center grain satisfy a first compensation rule, and the first compensation rule includes: D1≥D2, D1>D3;

[0012] A second stacking portion disposed on the first stacking portion, wherein the second stacking portion comprises: a plurality of second grain layers, the second grain layers comprising: a second edge region arranged along the edge of the mother sheet, and a second central region arranged along the central region, wherein the second edge region is provided with at least one column of second edge grains, the second central region is provided with at least one column of second central grains, and a plurality of columns of second spacer grains are arranged at intervals between the second edge region and the second central region;

[0013] The fourth through hole size D4, the fifth through hole size D5, and the sixth through hole size D6 of the second edge grain, the second spacer grain, and the second center grain satisfy a second compensation rule, and the second compensation rule includes: D4≥D5, D4>D6.

[0014] In some embodiments, the first through hole size D1, the second through hole size D2, and the third through hole size D3 further satisfy the following third compensation rule:

[0015] (D1-D3) / D3<10%;

[0016] (D2-D3) / D3<5%.

[0017] In some embodiments, the fourth through hole size D4, the fifth through hole size D5, and the sixth through hole size D6 further satisfy the following fourth compensation rule:

[0018] (D4-D6) / D6<10%;

[0019] (D5-D6) / D6<5%.

[0020] In some embodiments, the radius R of the central region is ≤ 75 mm.

[0021] In some embodiments, D2>D3, and / or, D5>D6.

[0022] In some embodiments, the first stacking portion and the second stacking portion satisfy a fifth compensation rule, and the fifth compensation rule includes: D1≤D4.

[0023] Another aspect of the present invention further provides a compensation method based on aperture compensation, the compensation method is applied to a packaging system based on aperture compensation as described in any one of the embodiments, and correspondingly, the method includes:

[0024] S301, obtaining packaging parameters of a target packaging system to be packaged, wherein the packaging parameters include: grain size;

[0025] S302, according to the packaging parameters, a first search rule is used to find a corresponding first historical aperture data group in a historical aperture database; wherein the historical aperture database includes: a plurality of historical aperture data groups, and one historical aperture data group includes: a first search tag, the first search tag includes: a historical size of a grain; and a through-hole size of an edge grain corresponding to the first search tag, a through-hole size of a corresponding interval grain, and a through-hole size of a center grain; correspondingly, the first search rule requires that the difference between the grain size of the first historical aperture data group found and the historical size satisfies the following model: |R1-R2| / f≤H; wherein R1 is the grain size, R2 is the historical size, f is a reference size, the reference size is R1 or R2, and H is a preset search difference threshold;

[0026] S303: When the first historical aperture data group is found, the first historical aperture data group is output as a first recommended compensation solution.

[0027] In some embodiments, the historical aperture data set further includes: a second search tag, the second search tag includes one or more of the following types: the historical size of the master sheet, the historical thickness of the die; correspondingly, the packaging parameters also include one or more of the following: the actual size of the master sheet, the actual thickness of the die; correspondingly, before S303, the step of:

[0028] S304, searching a corresponding second historical aperture data group in a historical aperture database using a second search rule according to the packaging parameter; wherein the second search rule requires that the second historical aperture data group found further meets the following requirements on the basis of meeting the first search rule:

[0029] |historical size of the master sheet-actual size of the master sheet| / reference size of the master sheet≤master sheet difference threshold, wherein the reference size of the master sheet is the historical size of the master sheet or the actual size of the master sheet;

[0030] and / or, |historical thickness of the grain-actual thickness of the grain| / reference thickness of the grain≤thickness difference threshold, wherein the reference thickness of the grain is the historical thickness of the grain or the actual thickness of the grain;

[0031] S305: When the second historical aperture data group is found, the second historical aperture data group is output as a second recommended compensation solution.

[0032] In some embodiments, only when the first historical aperture data set is retrieved, the second historical aperture data set will be further searched in the first historical aperture data set.

[0033] The present invention further provides another compensation system based on aperture compensation, the compensation system is applied to a packaging system based on aperture compensation as described in any one of the embodiments, and correspondingly, the compensation system includes:

[0034] A packaging parameter acquisition module is used to acquire packaging parameters of a target packaging system to be packaged, wherein the packaging parameters include: grain size;

[0035] A search module, used for searching a corresponding first historical aperture data group in a historical aperture database using a first search rule according to the packaging parameters; wherein the historical aperture database includes: a plurality of historical aperture data groups, and one historical aperture data group includes: a first search tag, the first search tag includes: a historical size of a grain; and a through-hole size of an edge grain corresponding to the first search tag, a through-hole size of a corresponding interval grain, and a through-hole size of a center grain; correspondingly, the first search rule requires that the difference between the grain size of the first historical aperture data group found and the historical size satisfies the following model: |R1-R2| / f≤H; wherein R1 is the grain size, R2 is the historical size, f is a reference size, the reference size is R1 or R2, and H is a preset search difference threshold;

[0036] The recommendation module is used for outputting the first historical aperture data group as a first recommended compensation solution when the first historical aperture data group is found.

[0037] Beneficial technical effects:

[0038] The present invention provides a limited classification based on three categories: edge, interval area, and center area, to achieve a differentiated aperture setting scheme. This differentiated setting can enhance the rigidity of the edge interval to improve the overall yield of the semiconductor device through local strength adjustment (i.e., reduce the overall deformation of the semiconductor device through local adjustment of the edge), thereby reducing the adjustment pressure on the basis of controlling the bending deformation.

[0039] In other words, for semiconductor devices of large size and thickness, the present invention classifies edge regions with greater stress and middle regions stretched by the edge regions into limited regions, and sets gradient differential adjustment of apertures for the limited regions.

[0040] Furthermore, for this gradient difference adjustment, the present invention also provides a multiple query mechanism for quickly setting the difference scheme. Specifically, the present invention establishes a standardized database and sets query priorities for key factors such as grain size, grain thickness, and semiconductor size (i.e., the size of the mother wafer). The present invention can use the standardized database to quickly query and obtain a reference aperture setting scheme.

[0041] It is worth noting that, with respect to the aperture setting, the present invention restricts from two dimensions, namely, regional classification and specific aperture setting values, and constructs a universal standardized database through a restrictive regional classification mode (in other words, the variables are controlled through a regional restriction scheme to make the database more universal and the query results more reliable). Furthermore, in the long-term semiconductor stacking process, the repeatability of different gradient aperture setting values ​​is relatively strong (or, the universality is relatively high). Therefore, this universal limited gradient adjustment scheme also brings relatively little pressure to the aperture processing process. For example, from the actual application stage of the factory, only a small number of aperture processing lines need to be set, and the increment of the aperture size is also relatively limited, which also makes the aperture processing easier to implement, and will not excessively increase the defects of the grains or affect the rigidity strength of the grains due to the increase in the aperture.

[0042] Therefore, this finite-based gradient adjustment setting scheme, in conjunction with the establishment of a standard database, can strike a good balance between increasing the aperture size of the grains and controlling the more defects that may be generated during large-aperture processing.

[0043] Moreover, in view of these aperture differentiation setting schemes, the present invention also provides a model prediction method that can take into account the aperture difference factor and predict the modified grinding thickness. Therefore, by coordinating the two aspects of setting the aperture of the grains with a limited gradient on a single layer and setting the grinding thickness of the layers with a limited gradient between different layers, the degree of numerical difference can be further reduced. In other words, the coordination of the two means can ensure that the edge aperture does not need to be too large and the grinding thickness of the upper grains does not need to be too small, thereby avoiding the gradient adjustment from bringing new pressure to the processing technology of the grains, so that too many defects are introduced in the adjustment process. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. In all the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, each element or part is not necessarily drawn according to the actual scale. Obviously, the drawings described below are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without paying creative labor.

[0045] Figure 1 is a schematic structural diagram of a wafer layer in an exemplary embodiment of the present invention;

[0046] Figure 2 It is a schematic diagram of the structural disassembly of a packaging system in an exemplary embodiment of the present invention;

[0047] Figure 3 is a schematic top view of a packaging system in an exemplary embodiment of the present invention;

[0048] Figure 4 is a schematic diagram of bending data of a packaging system in an exemplary embodiment;

[0049] Figure 5 is a schematic diagram of a method flow in an exemplary embodiment of the present invention;

[0050] Figure 6 is a schematic diagram of a method flow in another exemplary embodiment of the present invention;

[0051] Figure 7 It is a schematic diagram of a method flow in yet another exemplary embodiment of the present invention.

[0052] Figure numerals: first target area 10, middle area 20, second target area 30, grain 40; first measuring point 11, second measuring point 31; mother sheet 01, first stacking part 02, first edge grain 021, first center grain 023, first spacer grain 022; second stacking part 03, second edge grain 031, second center grain 033, second spacer grain 032, center point O. DETAILED DESCRIPTION

[0053] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0054] Herein, suffixes such as "module", "component" or "unit" used to represent elements are only used to facilitate the description of the present invention, and have no specific meanings by themselves. Therefore, "module", "component" or "unit" can be used mixedly.

[0055] In this document, the terms "upper", "lower", "inner", "outer", "front", "back", "one end", "the other end" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0056] In this document, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0057] Herein "and / or" includes any and all combinations of one or more of the associated listed items.

[0058] Herein, "plurality" means two or more than two, ie, it includes two, three, four, five, etc.

[0059] As used in this specification, the term "about" typically means + / - 5% of the stated value, more typically + / - 4% of the stated value, more typically + / - 3% of the stated value, more typically + / - 2% of the stated value, even more typically + / - 1% of the stated value, and even more typically + / - 0.5% of the stated value.

[0060] In this specification, some embodiments may be disclosed in a format of being in a range. It should be understood that this description of "being in a range" is only for convenience and brevity, and should not be interpreted as a rigid limitation on the disclosed range. Therefore, the description of the range should be considered to have specifically disclosed all possible sub-ranges and independent numerical values ​​within this range. For example, the description of the range 1-6 should be considered to have specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as individual numbers within this range, such as 1, 2, 3, 4, 5 and 6. Regardless of the breadth of the range, the above rules apply.

[0061] Herein, the "through hole size" of a certain area or a certain type of grains may refer to the average size of the grains (or the type of grains) in the area. For example, the first through hole size D1 of the first edge grain 021 refers to the average size of multiple edge grains. Herein, "through hole size" and "aperture" may be used interchangeably.

[0062] In this article, wafer refers to the silicon wafer used to make silicon semiconductor circuits. "Crystal" can be the small pieces cut from the wafer, also called "Die". "Crystal" with circuit structures processed on it can also be called "chip".

[0063] Generally, multiple dies need to be stacked to package into a complete semiconductor device. For example, on a mother wafer (for example, it can be a packaging substrate, that is, Substrate (SUB for short)), or it can be a packaging substrate that stacks multiple wafer layers in sequence. Wherein, a wafer layer includes multiple dies). When the number of stacked layers gradually increases, the packaging structure may curl due to the accumulation of tension, thereby causing defects and reducing the yield, such as Figure 4 The first curve S2 and the second curve S3 are schematic diagrams showing bending values ​​of different layers in an exemplary semiconductor device.

[0064] To this end, it may be necessary to reduce the grinding thickness of the back side of the grain (i.e., perform a back grinding operation). For example, the thickness of the grain after production processing is about 700-800μm. During the stacking process, it may be necessary to perform back grinding to reduce its thickness to about 70-80μm.

[0065] At present, a standardized backside grinding process is usually adopted, that is, a standardized grinding thickness is used to uniformly process multi-layer grains. However, the applicant has noticed that when the number of layers of the semiconductor device is too large and the area of ​​the chip layer is relatively large, this standardized processing method still has major problems in overall reliability and yield.

[0066] In this regard, contrary to the traditional standardized process, this application proposes a rolling differentiated grinding compensation scheme for multi-layer packaging structures. This rolling grinding compensation scheme can compensate for the grinding thickness of grains in different layer areas, and this differentiated compensation process can prevent the grinding thickness from becoming too small, increasing the difficulty of the grinding process (it should be noted that the smaller the thickness of the grain, the more defects it is likely to produce during the preparation process, and the higher the technical requirements for the grinding process).

[0067] In this article, different terms are used for the curling of the stacked structure, such as "bending degree" and "bending degree", which is mainly to facilitate the distinction between different compensation systems in different embodiments. In the embodiments of the present invention, the bending degree or bending degree is mainly a characterization index used to describe the curling deformation degree of the stacked structure. For example, it can be the upward deformation degree or the downward deformation degree at different diameter positions, or it can be the bending angle at different positions. As long as the bending deformation degree can be characterized, it can be applicable to the present invention and should also be within the protection scope of the present invention.

[0068] Embodiment 1

[0069] See also Figure 5 As shown, the present invention provides a compensation method for back grinding, comprising:

[0070] S101, stacking at least one first wafer layer on the layer to be stacked to form a first stacked layer; wherein the wafer layer comprises: a plurality of rows of grains arranged at intervals;

[0071] In some embodiments, the layers to be stacked include: a mother wafer, and a plurality of wafer layers disposed on the mother wafer.

[0072] In particular, in some embodiments, at the initial moment of stacking, the layer to be stacked refers to a mother sheet.

[0073] In some embodiments, the wafer layer includes: at least one layer of crystal grains. In particular, the wafer layer includes: a layer of crystal grains, that is, when each layer of new crystal grains is stacked, data such as the current bending value of the crystal grains can be collected.

[0074] S102, monitoring at least one first bending value and at least one second bending value of the first stacked layer in a first target area and a second target area, respectively; wherein the first target area is located in a peripheral area of ​​the wafer layer, the second target area is located in a central area of ​​the wafer layer, and an intermediate area is provided between the first target area and the second target area, and a plurality of rows of grains are arranged around the intermediate area;

[0075] See also Figure 3 A plurality of crystal grains are sequentially stacked on the mother sheet 01, and a first target area 10, a middle area 20 and a second target area 30 are sequentially arranged along the direction from the edge of the mother sheet to the center point O, and a plurality of rows of crystal grains 40 are respectively arranged in each area.

[0076] In some embodiments, a row of dies refers to a circle of dies arranged around a center point O. Alternatively, in some embodiments, a row of dies refers to a row of dies arranged along a radial direction of the mother substrate, or in a direction parallel to the radial direction.

[0077] Preferably, the bending value is measured as follows Figure 1 As shown, multiple first measurement points 11 are selected on the first target area 10, and multiple second measurement points 31 are selected on the second target area 30, wherein the bending value of the measurement point is the distance between the point and the reference line S, such as the first bending value Z2 and the second bending value Z1. The reference line S can be a straight line corresponding to the ideal positions of multiple measurement points in an ideal state where the die does not curl during the stacking process, or the reference line can be set by the user, which can be used to standardize the relative bending degree of measurement points at different positions.

[0078] For example, the degree of bending can be the difference between the ordinate of the measuring point and the standard line, with any straight line (or a straight line parallel to or similar to it) in the plane where the mother sheet is located at the initial moment as the abscissa and any straight line in a direction perpendicular to it as the ordinate.

[0079] S103, using a first discriminant model to calculate a grinding compensation index according to the first bending value and the second bending value; wherein the first discriminant model includes:

[0080] L1=aX1+bY1; wherein L1 is a grinding compensation index, a is a first weight, b is a second weight, X1 is a first bending degree, and Y1 is a second bending degree; wherein the first bending degree is a characteristic value of the at least one first bending value, the second bending degree is a characteristic value of the at least one second bending value, and the characteristic value includes one or more of the following types: mean, median, mode, or maximum value;

[0081] Preferably, an average value of a plurality of bending values ​​corresponding to a plurality of first measuring points 11 may be calculated. Preferably, the bending value may be an absolute value.

[0082] In particular, when there is only one bending value, the degree of bending can be directly characterized by the bending value.

[0083] S104, when the grinding compensation index is greater than a set first compensation threshold, reducing the grinding thickness of the next wafer layer.

[0084] That is, in this embodiment, when the grinding compensation index measured in combination with the first target area and the second target area is large, it is preferred to reduce the grinding thickness of the next wafer layer to control the overall bending deformation degree.

[0085] In some embodiments, the steps include:

[0086] S105, stacking at least one second wafer layer on the first stacking layer to obtain a second stacking layer; similarly, the second wafer layer includes a plurality of crystal grains;

[0087] S106, monitoring at least one third bending value and / or at least one fourth bending value of the second stacked layer in the first target area and / or the second target area respectively;

[0088] S107, using a second discriminant model to calculate the bending trend according to at least one set of bending values; wherein the second discriminant model includes:

[0089] L2=α(X2- X1) / t+β(Y2- Y1) / t; where L2 is the bending trend, α is the third weight, β is the fourth weight, X1 and X2 are the first bending degrees of the first wafer layer and the second wafer layer respectively, and Y 1、 Y2 is the second bending degree of the first wafer layer and the second wafer layer respectively; t is the interval time between two monitorings;

[0090] S108, when the bending tendency is greater than a set bending threshold, reducing the grinding thickness of the next wafer layer.

[0091] Preferably, in some embodiments, the bending values ​​of the first target area and the second target area at multiple moments are synchronously used to calculate their changing trends over a period of time.

[0092] For example, in some embodiments, for the convenience of uniform comparison, the bending degree is taken as a positive value. When the wafer layer includes: a layer of grains, the first bending degree X1 and the first bending degree X2 of the second wafer layer are calculated accordingly, and the second bending degrees Y of the first wafer layer and the second wafer layer are calculated accordingly. 1、Y2. The third weight and the fourth weight can be set by the user, and t is the difference between the corresponding measurement moments of the first wafer layer and the second wafer layer. In this embodiment, when the bending difference between the two measurements is large, a new compensation correction will be made to the next wafer layer, that is, the grinding thickness of the next wafer layer will continue to be reduced.

[0093] That is to say, in this embodiment, the second discriminant model can actually be used to calculate the first bending degree of the first wafer layer at the first moment and the first bending degree of the second wafer layer at the second moment to compare the changes in the bending degrees.

[0094] In some embodiments, at least one set of bending values ​​includes: a first bending degree of the first wafer layer and the second wafer layer; and / or a second bending degree of the first wafer layer and the second wafer layer.

[0095] For example, in some embodiments, the bending degree is also a positive number. When the wafer layer includes: multiple layers of crystal grains, correspondingly, when measuring the first wafer layer, the bending value of the multiple layers of crystal grains will be obtained, and the bending degree can be a characteristic value of the bending degree at multiple moments.

[0096] Preferably, the characteristic value of the degree of curvature can be the average, median, mean or maximum value of multiple curvature values; or, the characteristic value of the degree of curvature can also be the difference between the initial measurement time and the final measurement time in a measurement process. That is, the degree of curvature further introduces a time factor, which can describe the curvature change trend of the wafer layer over a period of time. Correspondingly, when the difference between the curvature change trends of the first and second wafer layers is small, it is considered that the corrected grinding thickness is more reliable; on the contrary, when the difference between the two is large, a new compensation correction will be continued for the next wafer layer, that is, the grinding thickness of the next wafer layer will continue to be reduced.

[0097] For example, in some embodiments, the first wafer layer and the second wafer layer may be two wafer layers disposed adjacent to each other, or at least one third wafer layer may be disposed at intervals therebetween.

[0098] For example, in some embodiments, the first discrimination model or the second discrimination model may be used to independently determine whether to initiate the step of correcting the grinding thickness.

[0099] In some embodiments, the steps include:

[0100] S109, obtaining an exceeding index of the bending trend exceeding the bending threshold within the first time period, where the exceeding index may be the exceeding frequency or the exceeding duration; for example, a corresponding exceeding signal may be issued to prompt the user to pay attention to whether the current compensation process is reliable.

[0101] S110: When the exceeding index is greater than a preset first exceeding threshold, the first discrimination model is modified.

[0102] In some embodiments, the step of modifying the first discriminant model includes:

[0103] Increase the value of the first weight, and / or decrease the value of the second weight.

[0104] Preferably, the first weight and the second weight may have an initial value set by the user or set by default, and as the stacking process gradually changes, feedback adjustment may be performed on them in combination with the correction effect.

[0105] Preferably, when exceeding signals whose bending trends exceed the bending threshold are frequently detected over a long period of time, such as the number of exceeding signals is greater than a set number, or the duration of the exceeding signals exceeds a set duration, the weight relationship of the first discriminant model will be adjusted.

[0106] In this embodiment, by evaluating the bending trend, the applicability of the first discriminant model can be adjusted before the compensation correction is performed. For example, when the bending degree increases rapidly and the first discriminant model has not yet made any feedback, its weight setting will be adjusted to improve the sensitivity of the first discriminant model. Therefore, by adjusting the sensitivity in the early stage, it is possible to avoid excessive delay in the compensation adjustment.

[0107] In some embodiments, the grinding thickness of the second wafer layer is less than or equal to the grinding thickness of the first wafer layer.

[0108] In some embodiments, the calculation model of the grinding thickness of the wafer layer currently includes:

[0109] Th n =Th n-1 +λ; where Th n is the grinding thickness of the current wafer layer, Th n-1 is the grinding thickness of the previous wafer layer, and λ is the preset compensation thickness.

[0110] For example, n-1 is the grinding thickness of the first wafer layer, then Th n is the grinding thickness of the second wafer layer.

[0111] For example, in some embodiments, the compensation thickness may have a preset default reference value. For example, for semiconductor devices of different thicknesses and sizes, the corresponding default compensation thickness may be set in combination with the user's engineering experience or historical stacking data. Alternatively, the compensation thickness may also be obtained by AI calculation based on the compensation model.

[0112] In some embodiments, after the step of reducing the grinding thickness of the next wafer layer, the method further comprises:

[0113] S111, using the second discriminant model to respectively calculate the first bending trend in a first time period and the second bending trend in a second time period;

[0114] S112, determining whether the difference between the second bending trend and the first bending trend belongs to a set threshold range, and if not, issuing a corresponding prompt signal.

[0115] Preferably, in this embodiment, when the model is corrected in combination with the discrimination result of the first discrimination model, the reliability of the correction can also be verified through the continuous change of the bending trend.

[0116] In order to deal with the edge curling problem that may occur during the stacking process, the present invention provides a solution for adjusting the grinding thickness of the grain based on the bending degree of the partition detection (i.e., a gradient adjustment solution based on the partition detection). Specifically, the present invention comprehensively analyzes the bending value (i.e., the degree of deformation) of the edge area with greater stress and the central area affected by the stress at the edge and the size of the wafer layer, thereby comprehensively evaluating the degree of bending deformation through distributed point measurement, and timely judging whether it is necessary to start the correction of the grinding thickness of the grain.

[0117] Furthermore, in order to avoid excessive delay in the gradient adjustment scheme, the bending change trend will be evaluated in coordination, so as to make early corrections to the grinding thickness in the early stage of rapid expansion of the bending deformation. Moreover, the evaluation of the bending deformation trend is also conducive to the evaluation of the timeliness of the first discrimination model. For example, if it is detected that the bending deformation trend is too large, the first discrimination model can be adjusted in the opposite direction.

[0118] Furthermore, after the grinding thickness correction is performed based on the evaluation result of the first or second discrimination model, the bending trend change after the correction can also be detected to determine whether the correction result is reliable through the bending trend change.

[0119] Correspondingly, the present invention also provides a compensation system for wafer back grinding, comprising:

[0120] A first stacking module is used to stack at least one first wafer layer on the layer to be stacked to form a first stacking layer; wherein the wafer layer comprises: a plurality of rows of grains arranged at intervals;

[0121] A first monitoring module is used to monitor at least one first bending value and at least one second bending value of the first stacked layer in a first target area and a second target area, respectively; wherein the first target area is located in a peripheral area of ​​the wafer layer, the second target area is located in a central area of ​​the wafer layer, and an intermediate area is provided between the first target area and the second target area, and a plurality of rows of grains are arranged around the intermediate area;

[0122] A first discrimination module is used to calculate a grinding compensation index according to the first bending value and the second bending value using a first discrimination model; wherein the first discrimination model includes:

[0123] L1=aX1+bY1; wherein L1 is a grinding compensation index, a is a first weight, b is a second weight, X1 is a first bending degree, and Y1 is a second bending degree; wherein the first bending degree is a characteristic value of the at least one first bending value, the second bending degree is a characteristic value of the at least one second bending value, and the characteristic value includes one or more of the following types: mean, median, mode, or maximum value;

[0124] The compensation module is used to reduce the grinding thickness of the next wafer layer when the grinding compensation index is greater than a set first compensation threshold.

[0125] In some embodiments, it also includes:

[0126] A second stacking module, used for stacking at least one second wafer layer on the first stacking layer to obtain a second stacking layer;

[0127] a second monitoring module, for monitoring at least one third bending value and / or at least one fourth bending value of the second stacked layer in the first target area and / or the second target area respectively;

[0128] The second discriminant module is used to calculate the bending trend according to at least one set of bending values ​​using a second discriminant model; wherein the second discriminant model includes:

[0129] L2=α(X2- X1) / t+β(Y2- Y1) / t; where L2 is the bending trend, α is the third weight, β is the fourth weight, X1 and X2 are the first bending degrees of the first wafer layer and the second wafer layer respectively, and Y 1、 Y2 is the second bending degree of the first wafer layer and the second wafer layer respectively; t is the interval time between two monitorings;

[0130] The bending trend determination module is used to reduce the grinding thickness of the next wafer layer when the bending trend is greater than a set bending threshold.

[0131] In some embodiments, it also includes:

[0132] An exceeding index determination module, used for obtaining an exceeding index of the bending trend exceeding the bending threshold within a first time period, wherein the exceeding index may be a frequency of exceeding or a duration of exceeding;

[0133] The model correction module is used to correct the first discrimination model when the exceeding index is greater than a preset first exceeding threshold value.

[0134] Embodiment 2

[0135] Furthermore, for this gradient adjustment scheme based on partition detection, the present invention also provides a crystal back compensation model, which combines key factors such as the thickness of the stacked layer, the grinding thickness of the previous layer of grains, and the curvature (i.e., the current overall thickness of the semiconductor, the grinding thickness of the previous gradient interval, and the degree of deformation and other main dimensions), as well as the type of semiconductor device (such as grain size, stacked layer size) to conduct a comprehensive analysis of the corrected grinding thickness in order to predict the grinding thickness of the next gradient.

[0136] In other words, the present invention coordinates the stacking type of semiconductor devices and the curvature of the semiconductors in the current stacking state of the semiconductor devices to precisely adjust the grinding thickness in a gradient manner for a specific semiconductor type, thereby improving the overall yield of semiconductor devices by utilizing the limited gradient grinding thickness adjustment. Moreover, this limited grinding thickness adjustment can reduce the difficulty of the grinding process (i.e., make the grinding process as uniform as possible), and at the same time avoid the overall grinding thickness being too small, so as to avoid the defects of a single grain increasing due to changes in the grinding process.

[0137] Preferably, in the present invention, the back surface compensation model is activated to correct the grinding thickness only when it is detected that the gradient adjustment needs to be activated. This staged correction can also reduce the frequency of grinding correction to simplify the correction process. The specific implementation scheme of the back surface compensation model is as follows:

[0138] See also Figure 6 As shown, the present invention also provides a compensation method based on a wafer back compensation model, comprising:

[0139] S201, obtaining a stacking parameter combination of a first stacking layer, wherein the first stacking layer includes: a mother wafer, and at least one wafer layer disposed on the mother wafer, and the wafer layer has a plurality of crystal grains. Correspondingly, the stacking parameter combination includes:

[0140] A first data type, wherein the first data type includes: a thickness of the first stacked layer (for example, the thickness of the first stacked layer is the overall thickness of the mother wafer and the wafer layers thereon), a size of the first stacked layer (such as a radius, a diameter, and other dimensions of the mother wafer), and a size of the grain (such as a radius, a diameter, and other dimensions of the grain);

[0141] A second data type, the second data type comprising: a first grinding thickness (such as a thickness of a grain) of the uppermost wafer layer of the first stacked layer, and a first curvature of the first stacked layer;

[0142] S202, inputting the stacking parameter combination into a pre-constructed back surface compensation model, and correspondingly obtaining a second grinding thickness of the next wafer layer; wherein the step of constructing the back surface compensation model includes:

[0143] S21, obtaining a training sample set, the training sample set comprising: a plurality of sample points, the sample points being associated with a first historical stacking parameter combination collected according to a historical stacking layer, and a second historical stacking parameter combination, wherein the historical stacking layer comprises: a first historical stacking layer; a second historical stacking layer obtained by stacking at least one historical wafer layer on the first historical stacking layer; correspondingly, the first historical stacking parameter combination comprises:

[0144] The first historical data type includes: the thickness of the first historical stacking layer, the size of the historical stacking layer, and the size of the grain;

[0145] A second historical data type, comprising: a first historical grinding thickness of the uppermost wafer layer of the first historical stacking layer, and a first historical curvature of the first historical stacking layer;

[0146] The second historical stacking parameter combination includes:

[0147] a second grinding thickness of the at least one historical wafer layer, and a second historical curvature of the second historical stack layer;

[0148] In this embodiment, the difference between the first historical curvature and the second historical curvature can be used to evaluate the impact of the second historical stacking layer on the subsequent process.

[0149] That is to say, one sample point in this embodiment corresponds to a semiconductor device at a packaging moment.

[0150] S22, inputting the training sample set into a neural network model, and correspondingly acquiring the crystal back compensation model; wherein the input layer of the neural network model includes: the first historical stacking parameter combination and the second historical curvature, and the output layer includes: the second grinding thickness.

[0151] In some embodiments, different neural network models may be used for model training according to different types of semiconductor devices (e.g., semiconductor devices of different functional types or different sizes). For example, the neural network models that may be selected include: BP neural network, fully connected neural network (FCN), deep feedforward neural network (DNN), and the like.

[0152] In some embodiments, the back surface compensation model can output a second grinding thickness at a specific curvature adjustment degree. The curvature adjustment degree (also equivalent to the curvature adjustment speed) is the difference between the first curvature at the current moment and the predicted curvature at the next moment (or the target curvature). At least one corrected wafer layer having the second grinding thickness is stacked on the first stacking layer to obtain a second stacking layer, and the predicted curvature of the second stacking layer is the second curvature.

[0153] It is understandable that the specific bending adjustment degree set in the model can be set by the user, which can be used as the initial speed of the wafer back compensation model.

[0154] For another example, in some embodiments, the back surface compensation model can also output a plurality of second grinding thicknesses corresponding to a plurality of bending adjustment degree conditions, and the user can freely select according to the plurality of second grinding thicknesses.

[0155] In some embodiments, the curvature may be a first degree of curvature measured within the first target area.

[0156] Alternatively, the curvature may also be a second curvature degree measured in the second target area.

[0157] Alternatively, the curvature may be a grinding compensation index obtained by combining the first target area and the second target area.

[0158] Alternatively, the curvature may also be a plurality of curvature values ​​of a plurality of measurement points in the first target area and the second target area, that is, the input combination of the wafer back compensation model further includes: curvature values ​​of a plurality of measurement points.

[0159] In some embodiments, including:

[0160] Correcting the grinding thickness of the next wafer layer to the second grinding thickness (that is, the wafer layer is also referred to as a corrected wafer layer);

[0161] Stacking the next wafer layer onto the first stacking layer, and correspondingly obtaining a second stacking layer;

[0162] monitoring a second curvature of (one or more) of the second stacked layers;

[0163] Calculating a bending change trend according to the first curvature and the second curvature;

[0164] When the bending change trend is smaller than the set bending trend, it is considered that the second grinding thickness currently meets the compensation requirement.

[0165] For example, in some embodiments, in order to facilitate unified calculation, the curvature is taken as an absolute value. In the actual stacking correction process, due to the relatively limited compensation amount, there may be a certain delay in the adjustment of the curvature, that is, after the grinding thickness of the next wafer layer is reduced, its curvature may continue to increase. In this regard, the difference in curvature before and after stacking is calculated (equivalent to the curvature change trend). When the difference between the curvature after stacking and the curvature at the previous moment is relatively small, it is considered that the curvature change trend is reduced and the correction feedback is more effective. Otherwise, it is considered that the correction speed is too slow or the correction is invalid, and a prompt signal can be sent to the user for manual verification and checking.

[0166] Preferably, in some embodiments, the bending trend may be the actual changing trend of the curvature before correction.

[0167] Alternatively, in other embodiments, the bending tendency may be set by the user.

[0168] In some embodiments, the bending ice flower tendency may be calculated by the curvature of the edge region between two moments.

[0169] In some embodiments, the wafer layer is provided with central grains, spacer grains and edge grains in sequence along the area from the center to the edge, and the first historical stacking parameter combination also includes: a third historical data type, and the third historical data type includes: the historical aperture of the edge grains, the historical aperture of the spacer grains, and the historical aperture of the edge grains. That is, the historical aperture can also be used as the data of the input layer for model training. Correspondingly, the stacking parameter combination can also include: the historical aperture of the edge grains, the historical aperture of the spacer grains, and the historical aperture of the edge grains. In other words, the back surface compensation model in this embodiment can combine the grinding thickness of the stacked grains and the through-hole size of the grains in different regions to comprehensively estimate the optimized grinding thickness of the next layer of grains.

[0170] In some embodiments, the first historical stacking parameter combination further includes: the historical column number of the edge grains, the historical column number of the interval grains, and the historical column number of the edge grains. That is, in some embodiments, the above column numbers can also be used as data of the input layer of model training.

[0171] The present invention also provides a compensation system based on a wafer back compensation model, comprising:

[0172] The stacking parameter acquisition module is used to acquire a stacking parameter combination of a first stacking layer, wherein the first stacking layer includes: a mother sheet, and at least one wafer layer arranged on the mother sheet, and the wafer layer has a plurality of grains. Correspondingly, the stacking parameter combination includes:

[0173] A first data type, the first data type comprising: a thickness of the first stacked layer, a size of the first stacked layer, and a size of the grain;

[0174] A second data type, the second data type comprising: a first grinding thickness of the uppermost wafer layer of the first stacked layer, and a first curvature of the first stacked layer;

[0175] An input module is used to input the stacking parameter combination into a pre-built back surface compensation model, and correspondingly obtain the second grinding thickness of the next wafer layer; wherein the back surface compensation model is constructed by training with a model training module; wherein the model training module includes:

[0176] The sample set acquisition unit is used to acquire a training sample set, wherein the training sample set includes: a plurality of sample points, wherein the sample points are associated with a first historical stacking parameter combination and a second historical stacking parameter combination collected according to a historical stacking layer, wherein the historical stacking layer includes: a first historical stacking layer; a second historical stacking layer obtained by stacking at least one historical wafer layer on the first historical stacking layer; and correspondingly,

[0177] The first historical stacking parameter combination includes: a first historical data type, which includes: the thickness of the first historical stacking layer, the size of the historical stacking layer, and the size of the grain; a second historical data type, which includes: the first historical grinding thickness of the uppermost wafer layer of the first historical stacking layer, and the first historical curvature of the first historical stacking layer;

[0178] The second historical stacking parameter combination includes: a second grinding thickness of the at least one historical wafer layer, and a second historical curvature of the second historical stacking layer;

[0179] A training unit is used to input the training sample set into a neural network model for training, and obtain the corresponding crystal back compensation model; wherein the input layer of the neural network model includes: the first historical stacking parameter combination, the second historical curvature, and the output layer includes: the second grinding thickness.

[0180] In some embodiments, the system further includes a monitoring module, wherein the monitoring module includes:

[0181] a correction unit, used for correcting the grinding thickness of the next wafer layer to the second grinding thickness;

[0182] A stacking unit, used for stacking the next wafer layer onto the first stacking layer, and correspondingly obtaining a second stacking layer;

[0183] a monitoring unit for monitoring the second curvature (or curvatures) of the second stacked layers;

[0184] A trend calculation unit, configured to calculate a bending change trend according to (one or more) first bending degrees and (one or more) second bending degrees;

[0185] The evaluation unit is used for considering that the current second grinding thickness meets the compensation requirement when the bending change trend is less than the set bending trend.

[0186] In some embodiments, the chip layer is provided with central grains, spacer grains and edge grains in sequence along the area from the center to the edge thereof, and the first historical stacking parameter combination also includes: a third historical data type, and the third historical data type includes: the historical aperture of the edge grain, the historical aperture of the spacer grain, and the historical aperture of the edge grain.

[0187] In some embodiments, the first historical stacking parameter combination further includes: a historical column number of the edge die, a historical column number of the spacer die, and a historical column number of the edge die.

[0188] Embodiment 3

[0189] For complex semiconductor device structures with large motherboard area or large stack thickness, the present invention also provides a packaging system based on aperture compensation, see Figure 2 As shown, including:

[0190] A mother sheet 01, on which a plurality of transmission interfaces (such as I / O interfaces) are arranged at intervals, and the transmission interfaces are used to be electrically connected to through holes (such as TSV, i.e., through silicon vias) of the crystal grains stacked thereon, and two adjacent layers of crystal grains are electrically connected through the through holes;

[0191] A first stacking portion 02 is arranged on the mother sheet, wherein the first stacking portion 02 includes: a plurality of first grain layers, and a grain layer includes: a plurality of grains distributed at intervals; the first grain layer includes: a first edge region arranged along the edge of the mother sheet, and a first central region arranged along the central region of the mother sheet, wherein the first edge region is provided with at least one column of first edge grains 021, the first central region is provided with at least one column of first central grains 023, and the first edge region and the first central region are alternately arranged with a plurality of columns of first spacer grains 022;

[0192] The first through hole size D1, the second through hole size D2, and the third through hole size D3 of the first edge grain 021, the first spacer grain 022, and the first center grain 023 satisfy a first compensation rule, and the first compensation rule includes: D1≥D2, D1>D3;

[0193] A second stacking part 03 disposed on the first stacking part, wherein the second stacking part comprises: a plurality of second grain layers, the second grain layer comprises: a second edge region arranged along the edge of the mother sheet, and a second central region arranged along the central region, wherein the second edge region is provided with at least one column of second edge grains 031, the second central region is provided with at least one column of second central grains 033, and the second edge region and the second central region are alternately arranged with multiple columns of second spacing grains 032;

[0194] The fourth through hole size D4, the fifth through hole size D5, and the sixth through hole size D6 of the second edge grain, the second spacer grain, and the second center grain satisfy a second compensation rule, and the second compensation rule includes: D4≥D5, D4>D6.

[0195] In this embodiment, the "through hole size" is also referred to as the "aperture", and the two may be used interchangeably.

[0196] In this document, different terms are used for the structural layer formed by a layer of grains, such as “grain layer” and “wafer layer”, which is mainly for the convenience of distinguishing different stacking structures or semiconductor devices in different embodiments.

[0197] In this embodiment, by increasing the aperture size of the edge grains, the strength (or rigidity) of the grain layer in the edge region can be enhanced, thereby being able to resist the tendency of bending deformation to a certain extent.

[0198] Preferably, in some embodiments, D2>D3; preferably, in some embodiments, D5>D6.

[0199] In some embodiments, the first through hole size D1, the second through hole size D2, and the third through hole size D3 further satisfy the following third compensation rule:

[0200] (D1-D3) / D3<10%;

[0201] And / or, (D2-D3) / D3<5%.

[0202] In some embodiments, the fourth through hole size D4, the fifth through hole size D5, and the sixth through hole size D6 further satisfy the following fourth compensation rule:

[0203] (D4-D6) / D6<10%;

[0204] And / or, (D5-D6) / D6<5%.

[0205] In some embodiments, the radius R of the central region is ≤ 75 mm.

[0206] In some embodiments, the first stacking portion and the second stacking portion satisfy a fifth compensation rule, and the fifth compensation rule includes: D1≤D4. For example, in some embodiments, D1<D4.

[0207] In this embodiment, a limited graded aperture differentiation setting scheme is proposed through three categories of edge, spacing area and center area, which can minimize the additional pressure generated by the differential aperture setting for through-hole processing on the basis of locally enhancing the strength of the grain layer.

[0208] It is worth noting that the larger the aperture of the grain, the higher the requirements for grain processing, that is, the larger the aperture, the more defects the grain will have. In this regard, the aperture differentiation setting scheme proposed in the present invention can control the aperture of most grains (such as the central area) within a relatively small range, so as to avoid the increase of grain defects on the basis of adjusting the overall strength of the grain layer.

[0209] Embodiment 4

[0210] Corresponding to the above packaging system, the present invention further provides a compensation method based on aperture compensation, the compensation method is applied to a packaging system based on aperture compensation as shown in the third embodiment, correspondingly, see Figure 7 As shown, the method includes:

[0211] S301, obtaining packaging parameters of a target packaging system to be packaged, wherein the packaging parameters include: grain size (such as diameter or radius of the grain);

[0212] S302, according to the packaging parameters, a first search rule is used to find a corresponding first historical aperture data group in a historical aperture database; wherein the historical aperture database includes: a plurality of historical aperture data groups, and one historical aperture data group includes: a first search tag, the first search tag includes: a historical size of a grain, and an aperture of an edge grain corresponding to the first search tag, an aperture of a corresponding interval grain, and an aperture of a center grain; correspondingly, the first search rule requires that the difference between the grain size of the historical aperture data group found and the historical size satisfies the following model: |R1-R2| / f≤H; wherein R1 is the grain size, R2 is the historical size, f is a reference size, the reference size is R1 or R2, and H is a preset search difference threshold;

[0213] S303: When the first historical aperture data group is found, the first historical aperture data group is output as a first recommended compensation solution.

[0214] In some embodiments, the historical aperture data set further includes: a second search tag, the second search tag includes one or more of the following types: the historical size of the master sheet, the historical thickness of the die; correspondingly, the packaging parameters also include one or more of the following: the actual size of the master sheet, the actual thickness of the die; correspondingly, before S303, the step of:

[0215] S304, searching a corresponding second historical aperture data group in a historical aperture database using a second search rule according to the packaging parameter; wherein the second search rule requires that the historical aperture data group found further meets the following requirements on the basis of meeting the first search rule:

[0216] |historical size of the master sheet-actual size of the master sheet| / reference size of the master sheet≤master sheet difference threshold, wherein the reference size of the master sheet is the historical size of the master sheet or the actual size of the master sheet;

[0217] and / or, |historical thickness of the grain-actual thickness of the grain| / reference thickness of the grain≤thickness difference threshold, wherein the reference thickness of the grain is the historical thickness of the grain or the actual thickness of the grain;

[0218] S305: When the second historical aperture data group is found, the second historical aperture data group is output as a second recommended compensation solution.

[0219] In some embodiments, to simplify the processing technology, the grains in different layers have the same or similar aperture sizes.

[0220] Furthermore, in this embodiment, combined with the backside grinding model in the second embodiment, the present invention can also comprehensively predict the corrected grinding thickness of the next grain by combining the through hole size and the grinding thickness of the stacked grains.

[0221] For example, in some embodiments, the method in this embodiment, the stacking parameter combination obtained also includes: the aperture of the edge grain, the aperture of the corresponding interval grain and the aperture of the center grain. Correspondingly, the input layer of the neural network model includes: the first historical stacking parameter combination and the second historical curvature, and the output layer includes: the second grinding thickness.

[0222] In this embodiment, the aperture difference design and grinding thickness are combined for two-dimensional comprehensive training, and the grinding thickness of the stacked grains can be corrected in a rolling manner (or gradient manner) based on the grain size design, thereby preventing the grinding thickness of the grains from becoming too thin while resisting the degree of bending deformation as much as possible, thereby reducing the number of defects that may be caused by the grinding thickness.

[0223] In some embodiments, only when the first historical aperture data set is retrieved, the second historical aperture data set will be further searched in the first historical aperture data set.

[0224] In some embodiments, the historical aperture database also includes one or more of the following data: the number of columns of edge grains corresponding to the first search label, the number of columns of the spacing grains corresponding to the first search label, and the number of columns of the center grains corresponding to the first search label.

[0225] It is worth noting that, on the one hand, the present invention proposes a limited graded aperture differentiation setting scheme through the three classifications of edge, interval area and center area, which can reduce the additional pressure generated by the differential aperture setting for through-hole processing as much as possible on the basis of locally enhancing the strength of the grain layer. On the other hand, by constructing a standardized query database, the aperture setting can be standardized and unified to a certain extent, further reducing the burden of the aperture differentiation setting on the aperture processing technology.

[0226] The present invention further provides a compensation system based on aperture compensation, and the compensation system is applied to a packaging system based on aperture compensation. Correspondingly, the compensation system includes:

[0227] A packaging parameter acquisition module is used to acquire packaging parameters of a target packaging system to be packaged, wherein the packaging parameters include: grain size;

[0228] A search module, used for searching a corresponding first historical aperture data group in a historical aperture database using a first search rule according to packaging parameters; wherein the historical aperture database includes: a plurality of historical aperture data groups, and one historical aperture data group includes: a first search tag, the first search tag includes: a historical size of a grain, and an aperture of an edge grain corresponding to the first search tag, an aperture of a corresponding interval grain, and an aperture of a center grain; correspondingly, the first search rule requires that the difference between the grain size of the historical aperture data group found and the historical size satisfies the following model: |R1-R2| / f≤H; wherein R1 is the grain size, R2 is the historical size, f is a reference size, the reference size is R1 or R2, and H is a preset search difference threshold;

[0229] The recommendation module is used for outputting the first historical aperture data group as a first recommended compensation solution when the first historical aperture data group is found.

[0230] The present invention also provides a computer-readable storage medium, in which a program or instruction is stored. When the program or instruction is executed, the method in any one of the embodiments is implemented.

[0231] The present invention also provides a computer program product, wherein a program or instruction is stored in the computer program product, and when the program or instruction is executed, the method in any one of the embodiments is implemented.

[0232] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0233] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, a magnetic disk, or an optical disk), and includes a number of instructions for a computer terminal (which can be a mobile phone, a computer, a server, or a network device, etc.) to execute the methods described in each embodiment of the present invention.

[0234] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A packaging system based on aperture compensation, characterized in that: include: A mother sheet (01), wherein a plurality of transmission interfaces are arranged at intervals on the mother sheet, the transmission interfaces being used to be electrically connected to through holes of the crystal grains stacked thereon, and the crystal grains of two adjacent layers are electrically connected via the through holes; A first stacking portion is arranged on the mother sheet, wherein the first stacking portion comprises: a plurality of first crystal grain layers, one crystal grain layer comprises: a plurality of crystal grains distributed at intervals; and the first crystal grain layer comprises: a first edge region arranged along the edge of the mother sheet, and a first central region arranged along the central region of the mother sheet, wherein the first edge region is provided with at least one column of first edge crystal grains (021), the first central region is provided with at least one column of first central crystal grains (023), and a plurality of columns of first spacer crystal grains (022) are arranged at intervals between the first edge region and the first central region; The first through hole size D1, the second through hole size D2, and the third through hole size D3 of the first edge grain (021), the first spacer grain (022), and the first center grain (023) satisfy a first compensation rule, and the first compensation rule includes: D1≥D2, D1>D3; A second stacking portion arranged on the first stacking portion, wherein the second stacking portion comprises: a plurality of second crystal grain layers, the second crystal grain layers comprising: a second edge region arranged along the edge of the mother sheet, and a second central region arranged along the central region, wherein the second edge region is provided with at least one column of second edge crystal grains (031), the second central region is provided with at least one column of second central crystal grains (033), and a plurality of columns of second spacer crystal grains (032) are arranged at intervals between the second edge region and the second central region; The fourth through hole size D4, the fifth through hole size D5, and the sixth through hole size D6 of the second edge grain, the second spacer grain, and the second center grain satisfy a second compensation rule, and the second compensation rule includes: D4≥D5, D4>D6.

2. A packaging system based on aperture compensation according to claim 1, characterized in that: The first through hole size D1, the second through hole size D2, and the third through hole size D3 also satisfy the following third compensation rule: (D1-D3) / D3<10%; (D2-D3) / D3<5%.

3. A packaging system based on aperture compensation according to claim 1, characterized in that: The fourth through hole size D4, the fifth through hole size D5, and the sixth through hole size D6 also satisfy the following fourth compensation rule: (D4-D6) / D6<10%; (D5-D6) / D6<5%.

4. The packaging system based on aperture compensation according to claim 1, characterized in that: The radius R of the central area is ≤75 mm.

5. The packaging system based on aperture compensation according to claim 1, characterized in that: D2>D3, and / or, D5>D6.

6. A packaging system based on aperture compensation according to any one of claims 1 to 5, characterized in that: The first stacking portion and the second stacking portion satisfy a fifth compensation rule, and the fifth compensation rule includes: D1≤D4.

7. A compensation method based on aperture compensation, characterized in that: The compensation method is applied to a packaging system based on aperture compensation as described in any one of claims 1 to 6. Correspondingly, the method includes: S301, obtaining packaging parameters of a target packaging system to be packaged, wherein the packaging parameters include: grain size; S302, according to the packaging parameters, a first search rule is used to find a corresponding first historical aperture data group in a historical aperture database; wherein the historical aperture database includes: a plurality of historical aperture data groups, and one historical aperture data group includes: a first search tag, the first search tag includes: a historical size of a grain; and a through-hole size of an edge grain corresponding to the first search tag, a through-hole size of a corresponding interval grain, and a through-hole size of a center grain; correspondingly, the first search rule requires that the difference between the grain size of the first historical aperture data group found and the historical size satisfies the following model: |R1-R2| / f≤H; wherein R1 is the grain size, R2 is the historical size, f is a reference size, the reference size is R1 or R2, and H is a preset search difference threshold; S303: When the first historical aperture data group is found, the first historical aperture data group is output as a first recommended compensation solution.

8. The compensation method based on aperture compensation according to claim 7, characterized in that: The historical aperture data set further includes: a second search tag, the second search tag includes one or more of the following types: the historical size of the master sheet, the historical thickness of the die; correspondingly, the packaging parameters also include one or more of the following: the actual size of the master sheet, the actual thickness of the die; correspondingly, before S303, the step of: S304, searching a corresponding second historical aperture data group in a historical aperture database using a second search rule according to the packaging parameter; wherein the second search rule requires that the second historical aperture data group found further meets the following requirements on the basis of meeting the first search rule: |historical size of the master sheet-actual size of the master sheet| / reference size of the master sheet≤master sheet difference threshold, wherein the reference size of the master sheet is the historical size of the master sheet or the actual size of the master sheet; and / or, |historical thickness of the grain-actual thickness of the grain| / reference thickness of the grain≤thickness difference threshold, wherein the reference thickness of the grain is the historical thickness of the grain or the actual thickness of the grain; S305: When the second historical aperture data group is found, the second historical aperture data group is output as a second recommended compensation solution.

9. The compensation method based on aperture compensation according to claim 8, characterized in that: Only when the first historical aperture data set is retrieved, the second historical aperture data set will be further searched in the first historical aperture data set.

10. A compensation system based on aperture compensation, characterized in that: The compensation system is applied to a packaging system based on aperture compensation as claimed in any one of claims 1 to 6. Correspondingly, the compensation system includes: A packaging parameter acquisition module is used to acquire packaging parameters of a target packaging system to be packaged, wherein the packaging parameters include: grain size; A search module, used for searching a corresponding first historical aperture data group in a historical aperture database using a first search rule according to the packaging parameters; wherein the historical aperture database includes: a plurality of historical aperture data groups, and one historical aperture data group includes: a first search tag, the first search tag includes: a historical size of a grain; and a through-hole size of an edge grain corresponding to the first search tag, a through-hole size of a corresponding interval grain, and a through-hole size of a center grain; correspondingly, the first search rule requires that the difference between the grain size of the first historical aperture data group found and the historical size satisfies the following model: |R1-R2| / f≤H; wherein R1 is the grain size, R2 is the historical size, f is a reference size, the reference size is R1 or R2, and H is a preset search difference threshold; The recommendation module is used for outputting the first historical aperture data group as a first recommended compensation solution when the first historical aperture data group is found.

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