Heating device
By designing a heating device with a stepped structure of the heating plate and the protruding parts, the problems of uneven heating of the wafer surface and low process yield rate during the semiconductor chip manufacturing process are solved, and the uniformity of surface heating of the parts to be heated and the process yield rate are achieved. improvement.
Patent Information
- Application Number
- CN202411424817.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-12
- Publication Date
- 2025-01-24
AI Technical Summary
During the semiconductor chip manufacturing process, the central area of the wafer is prone to collapse and deformation due to gravity, gaps and warping, resulting in uneven heating on the wafer surface and low process yield.
A heating device is designed. The first surface of the heating board includes the heating countertop and the first ring platform around the heating table. The first ring -shaped table is lower than the heating table and is a step structure with the heating table; several convex parts are located on the heating table On the top, it is used to support heating parts on the first surface and conduct heat conduction from the heating platform for heating items.
By contacting the protruding parts with the parts to be heated, the vacuum environment formed by the direct contact between the parts to be heated and the heating table is avoided, the deformation of the parts to be heated is avoided during the heating process, and the surface flatness and heating uniformity of the parts to be heated are improved. And the process yield rate is improved.
Smart Images
Figure CN119361476A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of semiconductor technology, and in particular to a heating device. Background Art
[0002] With the development of the power semiconductor chip manufacturing industry, such as insulated gate bipolar transistors (IGBTs) and fast recovery diodes (FRDs), in order to achieve lower losses, the wafers will be thinned during the process of power semiconductor chips. When the thickness of the wafer after thinning is below 200μm, the Taiko thinning process is often necessary, that is, only the central area of the wafer is thinned, and a certain width of the wafer edge is not thinned. The edge is used to form a support ring to support the thinned wafer.
[0003] However, when the wafer is baked on a traditional hot plate, the support ring is in contact with the surface of the hot plate, while there is a gap between the central area of the wafer and the hot plate. The central area of the wafer is prone to collapse and deformation due to gravity, gap and warping, resulting in uneven heating on the wafer surface and low process yield. Summary of the invention
[0004] The purpose of the present invention is to at least provide a heating device that can at least solve the problems of uneven surface heating of the heated part and low process yield, and at least achieve the effect of improving the surface heating uniformity of the heated part and the process yield.
[0005] In order to solve the above technical problems, the present invention provides a heating device, including: a heating plate, the first surface of the heating plate includes a heating table and a first annular table surrounding the heating table, the first annular table is lower than the heating table and has a step structure with the heating table; a plurality of protrusions, the protrusions are located on the heating table, and are used to conduct heat from the heating table to the direction of the part to be heated when the first surface supports the part to be heated.
[0006] The heating device provided by the present invention has a first surface of the heating plate including a heating table and a first annular table surrounding the heating table, the first annular table is lower than the heating table and has a step structure with the heating table; a plurality of convex parts are located on the heating table, which are used to conduct heat from the heating table to the direction of the heated part when the first surface supports the heated part. Therefore, by using the convex parts to contact the heated part, it is possible to avoid the formation of a vacuum environment after the heated part directly contacts the heating table, avoid deformation of the heated part during the heating process, improve the surface flatness of the heated part, and thus improve the uniformity of the heating on the surface of the heated part, and the process yield rate is high.
[0007] In addition, the outer edge of the first annular table extends to the edge of the first surface, or the first surface also includes a second annular table surrounding the first annular table, the outer edge of the second annular table extends to the edge of the first surface, and the second annular table is higher than the first annular table, and the second annular table, the first annular table and the heating table are overall in a groove-shaped structure. The structural design of the first annular table and the second annular table is flexible, and the sizes of the first annular table and the second annular table can be adjusted according to actual needs.
[0008] In addition, the width of the first annular table parallel to the first surface is 7mm to 10mm. If the width of the first annular table parallel to the first surface is less than 7mm, the raised support body in the part to be heated cannot extend to the step structure, resulting in no contact between the raised part and the part to be heated, and the effect of improving the surface flatness of the part to be heated is weak; if the width of the first annular table parallel to the first surface is greater than 10mm, it takes a long time to form the first annular table and the process efficiency is low. Therefore, the width range of 7mm to 10mm can not only achieve good contact between the raised part and the part to be heated, but also improve the efficiency of the preparation process.
[0009] In addition, the first height of the first annular table surface from the direction perpendicular to the first surface to the heating table surface is 1.3mm to 1.6mm. If the first height of the first annular table surface from the direction perpendicular to the first surface to the heating table surface is less than 1.3mm, the portion of the raised support body in the heated part extending to the step structure is small, the probability of the raised part contacting the heated part is small, and the effect of improving the surface flatness of the heated part is weak; if the first height of the first annular table surface from the direction perpendicular to the first surface to the heating table surface is greater than 1.6mm, it takes a long time to form the first annular table surface and the process efficiency is low. Therefore, the height range of 1.3mm to 1.6mm can not only achieve good contact between the raised part and the heated part, but also improve the efficiency of the preparation process.
[0010] In addition, part of the structure of the protrusion is embedded from the heating table to the interior of the heating plate, and the farthest distance from the part of the structure that is not embedded in the interior of the heating plate to the heating table is 0.15mm to 0.3mm. If the farthest distance from the part of the structure that is not embedded in the interior of the heating plate to the heating table is less than 0.15mm, the effect of avoiding the formation of a vacuum environment after the part to be heated directly contacts the heating table is weakened; if the farthest distance from the part of the structure that is not embedded in the interior of the heating plate to the heating table is greater than 0.3mm, the time for the heating table to conduct heat in the direction of the part to be heated is longer, and the process efficiency is low. Therefore, the farthest distance range of 0.15mm to 0.3mm can not only effectively avoid the formation of a vacuum environment after the part to be heated directly contacts the heating table, but also improve the efficiency of the preparation process.
[0011] In addition, the part to be heated includes a main body to be heated, a support body located at the edge of the main body to be heated and protruding from the surface to be heated of the main body to be heated; when the part to be heated is supported on the first surface, the surface to be heated of the main body to be heated is directly opposite to the heating table surface, and the distance from the end of the support body to the first annular table surface is smaller than the distance from the heating table surface to the first annular table surface. That is, the support body extends to the step structure, so that the surface to be heated of the main body to be heated is in direct contact with the protrusion, which can improve the uniformity of heating on the surface of the part to be heated, and the process yield is high.
[0012] In addition, the projection pattern of the support body on the plane to which the first annular table belongs is located inside the first annular table, or at least part of the projection pattern is located outside the first annular table. The position of the support body is flexibly designed and can be adjusted according to actual needs.
[0013] In addition, when the projection pattern of the support body on the plane to which the first annular table belongs is located inside the first annular table, the width of the first annular table is 1 to 4 times the width of the projection pattern. If the width of the first annular table 1 is less than 1 times the width of the projection pattern of the support body on the plane to which the first annular table belongs, the portion of the support body extending to the step structure is small, the probability of the convex part contacting the main body of the heated part is small, and the effect of improving the surface flatness of the heated part is weak; if the width of the first annular table is greater than 4 times the width of the projection pattern of the support body on the plane to which the first annular table belongs, it takes a long time to form the first annular table and the process efficiency is low. Therefore, a width range of 1 to 4 times can not only achieve good contact between the convex part and the heated part, but also improve the efficiency of the preparation process.
[0014] In addition, when the first surface supports the heated part, the end of the support body contacts the first annular table, or the second height of the end of the support body from the first annular table is 0.9 mm to 1.3 mm. The second height of the end of the support body from the first annular table adopts the above range, which provides a larger extension space for the support body, and the contact effect of the convex part and the heated part is better, and the effect of improving the uniformity of the heating of the heated part surface is enhanced.
[0015] In addition, a photoresist layer is laid on the other surface of the heated part opposite to the heated surface, which is used to absorb heat through the heated part. This is beneficial to remove the residual solvent in the photoresist, improve the curing property of the photoresist layer, and further improve the uniformity of the thickness of the photoresist layer, which is beneficial to the subsequent exposure and development process of the photoresist layer. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.
[0017] Figure 1 It is a structural schematic diagram of a heating device in the related art;
[0018] Figure 2 is a schematic diagram of a structure in which a heating element to be heated is deformed in the related art;
[0019] Figure 3 It is a schematic structural diagram of a heating device provided according to one embodiment of the present invention. DETAILED DESCRIPTION
[0020] In order to make the purpose, technical scheme and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it can be understood by those skilled in the art that in the embodiments of the present invention, many technical details are provided to enable readers to better understand the present invention. However, even without these technical details and various changes and modifications based on the following embodiments, the technical scheme claimed in the present invention can be implemented.
[0021] Related art provides a heating device, referring to Figure 1 , comprising: a heating plate 1; a plurality of protrusions 2, the protrusions 2 being located on the first surface of the heating plate 1; the heating plate 1 being used to support the member to be heated 3 on the first surface and to heat the member to be heated 3. If the member to be heated 3 comprises a main body 31 to be heated, and a support 32 located at the edge of the main body 31 to be heated and protruding from the surface to be heated of the main body 31 to be heated, when the member to be heated 3 is supported on the first surface, the support 32 is in contact with the heating plate 1, and there is a gap h1 between the main body 31 to be heated and the heating plate 1. For example, if the thickness of the member to be heated 3 is 100 μm, the value of h1 is equal to 625 μm. As the thickness of the member to be heated 3 decreases, while the thickness of the support 32 remains unchanged, the value of h1 will increase accordingly.
[0022] refer to Figure 2 , because there is a gap h1 between the main body 31 to be heated and the heating plate 1, and there is also a certain gap between the main body 31 to be heated and the protrusion 2, the protrusion 2 has little effect on heat conduction because the support body 32 is in contact with the heating plate 1. In addition, due to the gravity, gap and warping, the main body 31 to be heated is prone to collapse and deformation. At this time, the value of h1 changes, resulting in uneven heating of the wafer surface, and the uniformity of the heating temperature of the heating plate 1 on the entire surface of the heated part 3 to be heated cannot be guaranteed, and the process yield is low.
[0023] Therefore, there is an urgent need to provide a heating device to solve the problems of uneven heating of the surface of the heated part and low process yield.
[0024] An embodiment of the present invention provides a heating device, referring to Figure 3 , including: a heating plate 100, the first surface of the heating plate 100 including a heating table 100a and a first annular table 100b surrounding the heating table 100a, the first annular table 100b is lower than the heating table 100a and has a step structure with the heating table 100a; a plurality of protrusions 110, the protrusions 110 are located on the heating table 100a, and are used to conduct heat from the heating table 100a to the direction of the part to be heated 120 when the first surface supports the part to be heated 120.
[0025] In this embodiment, the convex part 110 is in contact with the part to be heated 120, so as to avoid the formation of a vacuum environment after the part to be heated 120 directly contacts the heating table 100a, avoid deformation of the part to be heated 120 during the heating process, improve the surface flatness of the part to be heated 120, and further improve the uniformity of heating on the surface of the part to be heated 120, and have a high process yield.
[0026] In this embodiment, the object to be heated 120 may be, but is not limited to, a wafer.
[0027] In one embodiment, reference Figure 3 , the heated part 120 includes a main body 120a to be heated, and a support 120b located at the edge of the main body 120a to be heated and protruding from the surface to be heated of the main body 120a to be heated; when the first surface supports the heated part 120, the surface to be heated of the main body 120a to be heated is directly opposite to the heating table 100a, and the distance from the end of the support 120b to the first annular table 100b is smaller than the distance from the heating table 100a to the first annular table 100b. That is, the support 120b extends to the step structure, so that the surface to be heated of the main body 120a to be heated is in direct contact with the protrusion 110, which can improve the uniformity of the heating of the surface of the heated part 120, and the process yield is high.
[0028] In this embodiment, the surface to be heated of the main body 120a to be heated is the back of the main body 120a to be heated. When the first surface supports the heated member 120, the back of the main body 120a to be heated is directly opposite to the heating table 100a. During the operation of the heating device, the heat transfer path is: from the heating table 100a of the heating plate 100 through the convex part 110 to the back of the main body 120a to be heated, and then from the back of the main body 120a to be heated to the front of the main body 120a to be heated.
[0029] It should be noted that the heated body 120a of the heated member 120 is the area where the chip circuit is formed in the subsequent process, so the support body 120b is an invalid area. The support body 120b can reduce the probability of fragmentation of the heated member 120 in the subsequent transmission process.
[0030] In one embodiment, the width of the support 120b parallel to the first surface is 2.5 mm to 3 mm, for example, 2.5 mm, 2.8 mm or 3 mm; the thickness of the support 120b perpendicular to the first surface is 500 μm to 600 μm, for example, 500 μm, 550 μm or 600 μm. The width and thickness of the support 120b are within the above ranges, which can enhance the effect of reducing the probability of fragments of the heated member 120 in the subsequent conveying process.
[0031] In other embodiments, the heated member includes a body to be heated and the edge of the body to be heated is not provided with a support body protruding from the heated surface of the body to be heated, wherein the heated surface of the body to be heated is opposite to the heating table surface.
[0032] In one embodiment, the width of the first annular table 100b parallel to the first surface is 7 mm to 10 mm. If the width of the first annular table 100b parallel to the first surface is less than 7 mm, the raised support body 120b in the heated part 120 cannot extend to the step structure, resulting in the convex part 110 not contacting the heated part 120, and the effect of improving the surface flatness of the heated part 120 is weak; if the width of the first annular table 100b parallel to the first surface is greater than 10 mm, it takes a long time to form the first annular table 100b, and the process efficiency is low. Therefore, the width range of 7 mm to 10 mm can not only achieve good contact between the convex part 110 and the heated part 120, but also improve the efficiency of the preparation process.
[0033] In one embodiment, the first height of the first annular table 100b from the direction perpendicular to the first surface to the heating table 100a is 1.3 mm to 1.6 mm. If the first height of the first annular table 100b from the direction perpendicular to the first surface to the heating table 100a is less than 1.3 mm, the portion of the raised support body 120b in the heated part 120 extending to the step structure is small, the probability of the convex part 110 contacting the heated part 120 is small, and the effect of improving the surface flatness of the heated part 120 is weak; if the first height of the first annular table 100b from the direction perpendicular to the first surface to the heating table 100a is greater than 1.6 mm, it takes a long time to form the first annular table 100b, and the process efficiency is low. Therefore, the height range of 1.3 mm to 1.6 mm can not only achieve good contact between the convex part 110 and the heated part 120, but also improve the efficiency of the preparation process.
[0034] In one embodiment, the process of forming the first annular table 100b includes a grinding process, and the step of forming the first annular table 100b includes: using a grinding piece to perform grinding around the center of the heating table 100a and around the heating table 100a.
[0035] In one embodiment, the grinding member includes a grinding wheel. The number of turns of the grinding process is one turn or more turns. The parameters such as the time and number of turns of the grinding process are set according to actual needs and are not limited here. In other embodiments, the grinding member includes other grinding tools.
[0036] In other embodiments, the process of forming the first annular mesa includes other processes, such as an etching process. The present application does not limit the process of forming the first annular mesa.
[0037] In one embodiment, the partial structure of the protrusion 110 is embedded from the heating table 100a to the inside of the heating plate 100, and the maximum distance from the partial structure not embedded in the heating plate 100 to the heating table 100a is 0.15mm to 0.3mm. The partial structure of the protrusion 110 is embedded from the heating table 100a to the inside of the heating plate 100, and the protrusion 110 and the heating table 100a are in close contact, which reduces the thermal resistance of the heating table to conduct heat in the direction of the heated part; at the same time, the risk of the protrusion 110 falling off during use is avoided. Secondly, if the maximum distance from the partial structure not embedded in the heating plate 100 to the heating table 100a is less than 0.15mm, the effect of forming a vacuum environment after the heated part 120 is directly in contact with the heating table 100a is weakened; if the maximum distance from the partial structure not embedded in the heating plate 100 to the heating table 100a is greater than 0.3mm, the time for the heating table 10a to conduct heat in the direction of the heated part 120 is long, and the process efficiency is low. Therefore, the maximum distance range of 0.15 mm to 0.3 mm can effectively avoid the formation of a vacuum environment after the heated component 120 directly contacts the heating table 100 a , and can also improve the efficiency of the preparation process.
[0038] In other embodiments, the protrusion may not be embedded into the interior of the heating plate.
[0039] In one embodiment, the material of the protrusion 110 includes a heat-conducting material, such as ceramic, which can quickly and evenly transfer the heat generated by the heating table 100a to the heated surface of the heated component 120, so that the surface of the heated component 120 is heated evenly, while reducing the loss of heat during the transfer process, thereby improving the baking efficiency of the heated component 120.
[0040] In other embodiments, the material of the protrusion includes other thermally conductive materials.
[0041] In one embodiment, the shape of the protrusion 110 includes a sphere. The spherical protrusion has a larger surface area under the same volume, and can better utilize space for heat transfer. In other embodiments, the shape of the protrusion includes other shapes.
[0042] In one embodiment, continue to refer to Figure 3 The first surface also includes a second annular table 100c surrounding the first annular table 100b, the outer edge of the second annular table 100c extends to the edge of the first surface, and the second annular table 100c is higher than the first annular table 100b, and the second annular table 100c, the first annular table 100b and the heating table 100a are in a groove structure as a whole. The groove structure is annular, and the support body 120b extends into the groove structure, so that the surface to be heated of the main body 120a to be heated is in direct contact with the convex part 110, which can improve the uniformity of the heating of the surface of the heated part 120, and the process yield rate is high.
[0043] The centers of the heating table 100a, the first annular table 100b and the second annular table 100c all coincide with each other, and the groove structure coincides with the centers of the heating table 100a, the first annular table 100b and the second annular table 100c.
[0044] Figure 3 The second annular table 100c is flush with the heating table 100a as an example. In other embodiments, the second annular table may be lower than the heating table. The structural design of the first annular table 100b and the second annular table 100c is flexible, and the sizes of the first annular table 100b and the second annular table 100c can be adjusted according to actual needs.
[0045] In one embodiment, the cross-sectional shape of the groove structure along the vertical direction to the first surface includes a square. In other embodiments, the cross-sectional shape of the groove structure along the vertical direction to the first surface includes other shapes.
[0046] In another embodiment, the outer edge of the first annular table 100b extends to the edge of the first surface, providing a larger extension space for the support body 120b.
[0047] In one embodiment, the projection pattern of the support body 120b on the plane to which the first annular table 100b belongs is located inside the first annular table. The support body 120b can be fully extended to the area of the step structure formed by the first annular table 100b and the heating table 100a, so that the protrusion 110 contacts the part to be heated 120. When the first surface supports the part to be heated 120, the heat conduction effect from the heating table 100a to the part to be heated 120 is enhanced, thereby improving the uniformity of the heating on the surface of the part to be heated 120.
[0048] In one embodiment, the width of the first annular table 100b is 1 to 4 times the width of the projection pattern of the support body 120b on the plane to which the first annular table 100b belongs, for example, 1, 2, 3 or 4 times. If the width of the first annular table 100b is less than 1 times the width of the projection pattern of the support body 120b on the plane to which the first annular table 100b belongs, the portion of the support body 120b extending to the step structure is small, the probability of the convex part 110 contacting the main body 120a of the heated part is small, and the effect of improving the surface flatness of the heated part 120 is weak; if the width of the first annular table 100b is greater than 4 times the width of the projection pattern of the support body 120b on the plane to which the first annular table 100b belongs, it takes a long time to form the first annular table 100b, and the process efficiency is low. Therefore, a width range of 1 to 4 times can not only achieve good contact between the convex part 110 and the heated part 120, but also improve the efficiency of the preparation process.
[0049] In other embodiments, the width of the first annular table 100b is a multiple of the width of the projection pattern of the support body 120b on the plane to which the first annular table 100b belongs, which can be adjusted according to actual needs and is not limited here.
[0050] In one embodiment, the first height of the first annular table 100b from the direction perpendicular to the first surface to the heating table 100a is 1 to 3 times the thickness of the support 120b, for example, 1, 2 or 3 times. If the first height of the first annular table 100b from the direction perpendicular to the first surface to the heating table 100a is less than 1 times the thickness of the support 120b, the portion of the support 120b extending to the step structure is small, the probability of the convex part 110 contacting the main body 120a of the heated part is small, and the effect of improving the surface flatness of the heated part 120 is weak; if the first height of the first annular table 100b from the direction perpendicular to the first surface to the heating table 100a is greater than 3 times the thickness of the support 120b, it takes a long time to form the first annular table 100b, and the process efficiency is low. Therefore, a thickness range of 1 to 3 times can not only achieve good contact between the convex part 110 and the heated part 120, but also improve the efficiency of the preparation process.
[0051] In one embodiment, continue to refer to Figure 3 When the first surface supports the heated member 120, the second height of the end of the support body 120b from the first annular table 100b is 0.9 mm to 1.3 mm, for example, 0.9 mm, 1.1 mm, 1.2 mm or 1.3 mm. The second height of the end of the support body 120b from the first annular table 100b is in the above range, which provides a larger extension space for the support body 120b, and the contact effect between the convex part 110 and the heated member 120 is better, and the effect of improving the uniformity of the heating on the surface of the heated member 120 is enhanced.
[0052] In another embodiment, when the first surface supports the heated member 120, the end of the support body 120b contacts the first annular table 100b. That is, the second height between the end of the support body 120b and the first annular table 100b is 0 mm. The second height between the end of the support body 120b and the first annular table 100b can be adjusted according to actual needs and is not limited here.
[0053] In another embodiment, at least part of the projection pattern of the support body 120b on the plane to which the first annular table 100b belongs is located outside the first annular table 100b, thereby providing a larger extension space for the support body 120b.
[0054] In one embodiment, a photoresist layer (not shown) is laid on the other surface of the heated member 120 that is opposite to the surface to be heated, and is used to absorb heat through the heated member 120. The other surface of the heated member 120 that is opposite to the surface to be heated is the front surface of the heated member 120, and the photoresist layer absorbs heat through the front surface of the heated member 120 to remove the residual solvent in the photoresist, improve the curing property of the photoresist layer, and improve the uniformity of the thickness of the photoresist layer, which is beneficial to the subsequent exposure and development process of the photoresist layer, thereby realizing new process development or new structure design.
[0055] Another embodiment of the present invention further provides a semiconductor device, comprising the heating device of the above embodiment; and a coating device, wherein the coating device is suitable for coating a photoresist layer on another surface of the heated member 120 that is opposite to the heated surface.
[0056] In one embodiment, the semiconductor device includes a coating developer. After a photoresist layer is coated on another surface of the heated member 120 that is opposite to the heated surface by a coating device, a heating device is used to bake the heated member 120 and the photoresist layer. The uniformity of the thickness of the photoresist layer is improved, and the process reliability of forming a power semiconductor chip is improved.
[0057] In one embodiment, the power semiconductor chip is an insulated gate bipolar transistor or a fast recovery diode.
[0058] It should be understood that the expressions "mechanism", "device", "component" and the like used in this application are only a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the word can be replaced by other expressions.
[0059] Those skilled in the art can understand that the above-mentioned embodiments are specific examples for realizing the present invention, and in practical applications, the technical features of the above-mentioned embodiments can be arbitrarily combined. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification, and various changes can be made in form and details without departing from the spirit and scope of the present invention.
Claims
1. A heating device, characterized in that: include: A heating plate, wherein the first surface of the heating plate comprises a heating table and a first annular table surrounding the heating table, wherein the first annular table is lower than the heating table and forms a step structure with the heating table; A plurality of convex parts are located on the heating table surface and are used for conducting heat from the heating table surface to the direction of the heated part when the first surface supports the heated part.
2. The heating device according to claim 1, characterized in that The outer edge of the first annular table extends to the edge of the first surface, or, The first surface also includes a second annular table surface surrounding the first annular table surface, the outer edge of the second annular table surface extends to the edge of the first surface, and the second annular table surface is higher than the first annular table surface, and the second annular table surface, the first annular table surface and the heating table surface are overall in a groove-shaped structure.
3. The heating device according to claim 1, characterized in that: The width of the first annular table surface parallel to the first surface is 7 mm to 10 mm.
4. The heating device according to claim 1, characterized in that A first height from the first annular table surface to the heating table surface along a direction perpendicular to the first surface is 1.3 mm to 1.6 mm.
5. The heating device according to claim 1, characterized in that: A partial structure of the protrusion is embedded from the heating table to the interior of the heating plate, and a maximum distance from a partial structure not embedded in the interior of the heating plate to the heating table is 0.15 mm to 0.3 mm.
6. The heating device according to claim 1, characterized in that: The heated part comprises a main body to be heated, and a support body located at the edge of the main body to be heated and protruding from the heated surface of the main body to be heated; When the first surface supports the heated component, the heated surface of the heated body faces the heating table, and the distance from the end of the support body to the first annular table is smaller than the distance from the heating table to the first annular table.
7. The heating device according to claim 6, characterized in that The projection pattern of the support body on the plane to which the first annular table surface belongs is located inside the first annular table surface, or at least part of the projection pattern is located outside the first annular table surface.
8. The heating device according to claim 7, characterized in that: When the projection pattern of the support body on the plane to which the first annular table surface belongs is located inside the first annular table surface, the width of the first annular table surface is 1 to 4 times the width of the projection pattern.
9. The heating device according to claim 7, characterized in that: When the first surface supports the part to be heated, the end of the support body contacts the first annular table surface, or the second height between the end of the support body and the first annular table surface is 0.9 mm to 1.3 mm.
10. The heating device according to claim 6, characterized in that: A photoresist layer is laid on the other surface of the heated part directly facing the heated surface, and is used to absorb heat through the heated part.