A hybrid power module based on Si IGBT and SiC MOSFET and its manufacturing method

Abstract

The present application provides a hybrid power module based on Si IGBTs and SiC MOSFETs and a manufacturing method. The hybrid power module includes: a half-bridge structure composed of a Si IGBT chip and a SiC MOSFET chip, each bridge arm of the half-bridge structure consisting of a Si IGBT chip and a SiC MOSFET chip connected in parallel and in reverse parallel with a diode; a copper-clad ceramic substrate for carrying the half-bridge structure, the copper-clad ceramic substrate connecting power terminals and signal terminals; a heat dissipation substrate bonded to the copper-clad ceramic substrate; and a packaging shell that cooperates with the heat dissipation substrate to seal and package the copper-clad ceramic substrate, wherein the power terminals are integrated into the packaging shell. The present application can narrow the junction temperature gap between the Si IGBT chip and the SiC MOSFET chip, reduce the risk of failure of the bonding wires and solder layers of the SiC MOSFET chip due to long-term high temperature and thermal stress, and improve the reliability of the hybrid power module.

Description

Technical Field

[0001] The present invention relates to the field of power electronics, and in particular to a hybrid power module based on Si IGBT and SiC MOSFET and a manufacturing method thereof. Background Art

[0002] Power semiconductor devices, as core components in power electronic converters, are currently widely used in new energy system inverters, battery management, electric drive systems, and frequency converters. Si IGBT-SiC MOSFET hybrid modules combine the high current-carrying capacity of IGBTs with the high-frequency and high-efficiency characteristics of SiC MOSFETs, leveraging the complementary advantages of both devices. They also offer lower switching losses than IGBT modules and lower cost than all-SiC solutions, achieving a compromise between performance and cost. Packaging power chips into hybrid power modules reduces parasitic parameters and optimizes thermal management, simplifying system design and layout and improving system reliability. However, the Si IGBT and SiC MOSFET chips within the hybrid power module generate different amounts of heat due to the different currents they carry. This, combined with the varying thermal resistances caused by varying chip sizes, further leads to varying chip junction temperatures, potentially causing the SiC MOSFET junction temperature to exceed its specified temperature limit, impacting the module's long-term reliability. Summary of the Invention

[0003] In view of the above problems existing in the prior art, the present invention proposes a hybrid power module based on Si IGBT and SiC MOSFET and a manufacturing method, which mainly solves the problem of poor reliability of existing devices.

[0004] In order to achieve the above-mentioned and other purposes, the technical solutions adopted by the present invention are as follows.

[0005] The present application provides a hybrid power module based on Si IGBT and SiC MOSFET, comprising: a half-bridge structure composed of Si IGBT chips and SiC MOSFET chips, each bridge arm of the half-bridge structure being composed of a Si IGBT chip and a SiC MOSFET chip connected in parallel and in reverse parallel with a diode; a copper-clad ceramic substrate, which is used to carry the half-bridge structure, and the copper-clad ceramic substrate is connected to a power terminal and a signal terminal; a heat dissipation substrate, which is bonded to the copper-clad ceramic substrate; a plate-fin structure is provided on the side of the heat dissipation substrate facing away from the copper-clad ceramic substrate for heat dissipation, and the plate-fin structure is directly opposite to the position where the SiC MOSFET chip is located; and a packaging shell, which cooperates with the heat dissipation substrate to seal and package the copper-clad ceramic substrate, wherein the power terminals are integrated on the packaging shell.

[0006] In one embodiment, the SiC MOSFET chip is connected in series with a shunt resistor, and the operating state of the corresponding chip is determined by detecting the voltage across the shunt resistor.

[0007] In one embodiment, two ends of the shunt resistor are led out through the signal terminal for current detection.

[0008] In one embodiment, in a working state, the current flow direction of the power terminal is perpendicular to the arrangement direction of the Si IGBT chip and the SiCMOSFET chip, so as to shorten the length of the commutation loop.

[0009] In one embodiment, the plate-fin structure includes a wave shape, and cylindrical pin fins are further provided on the side of the heat dissipation substrate facing away from the copper-clad ceramic substrate for heat dissipation, and the cylindrical pin fins are directly opposite to the location of the Si IGBT chip.

[0010] In one embodiment, the packaging shell and the heat dissipation substrate are fixed by rivets and screws.

[0011] In one embodiment, the power terminal is connected to the copper-clad ceramic substrate by an ultrasonic welding process.

[0012] The present application also proposes a manufacturing method for the hybrid power module based on Si IGBT and SiC MOSFET, comprising: welding a power chip and a shunt resistor on a copper-clad ceramic substrate and establishing a connection through bonding wires; welding the copper-clad ceramic substrate on a heat dissipation substrate; welding a signal terminal to the copper-clad ceramic substrate through a tool; connecting the packaging shell to the heat dissipation substrate through a sealant and fixing them with screws and rivets; interconnecting the power terminal to the copper-clad ceramic substrate through ultrasonic welding; injecting potting glue, curing it, and then covering it with a cover plate to complete the sealed package.

[0013] As described above, the hybrid power module based on Si IGBT and SiC MOSFET and the manufacturing method thereof proposed in the present invention have the following beneficial effects.

[0014] The present application increases the heat dissipation contact area at the corresponding position of the SiC MOSFET chip through the plate-fin structure, which can more effectively dissipate heat in a timely manner, thereby reducing the junction temperature of the SiC MOSFET chip, narrowing the junction temperature difference between the Si IGBT chip and the SiC MOSFET chip, and reducing the risk of failure of the bonding wires and solder layers of the SiC MOSFET chip due to long-term high temperature and thermal stress, thereby improving the reliability of the hybrid power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 Schematic diagram of the existing hybrid full-bridge module structure.

[0016] Figure 2 Schematic diagram of the double-sided heat dissipation packaging structure of an existing hybrid power module.

[0017] Figure 3 FIG1 is a schematic structural diagram of a hybrid power module based on Si IGBT and SiC MOSFET in one embodiment of the present application.

[0018] Figure 4 FIG. 1 is a schematic diagram of a circuit topology of a hybrid power module in an embodiment of the present application.

[0019] Figure 5 FIG. 1 is a structural diagram of a hybrid power module provided with a shunt resistor in an embodiment of the present application.

[0020] Figure 6 Schematic diagram of a commutation circuit in one embodiment of the present application.

[0021] Figure 7 FIG. 1 is a schematic diagram of parasitic parameter simulation results of a hybrid power module in an embodiment of the present application.

[0022] Figure 8 Schematic diagram of the existing cylindrical pin-fin heat dissipation structure.

[0023] Figure 9 Schematic diagram of a heat dissipation structure in one embodiment of the present application.

[0024] Figure 10 FIG. 1 is a flow chart of a method for manufacturing a hybrid power module according to an embodiment of the present application.

[0025] Description of Figure Numbers:

[0026] 01-power terminal; 02-signal terminal; 03-package shell; 04-cover; 05-Si IGBT chip; 06-SiC MOSFET chip; P-positive power terminal; N-negative power terminal; U-AC power terminal; 07-shunt resistor; 08-diode; 09-cylindrical pin fin; 10-wavy plate fin; 11-heat dissipation substrate. DETAILED DESCRIPTION

[0027] The following describes the embodiments of the present invention through specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. The details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other unless they conflict.

[0028] It should be noted that the illustrations provided in the following embodiments are merely schematic illustrations of the basic concept of the present invention. Therefore, the illustrations only show components related to the present invention and are not drawn according to the number, shape, and size of components in actual implementation. In actual implementation, the type, quantity, and proportion of each component may be changed arbitrarily, and the component layout may also be more complex.

[0029] The inventors have discovered that:

[0030] Power semiconductor devices, as core components in power electronic converters, are currently widely used in new energy system inverters, battery management, electric drive systems, and frequency converters. Si IGBT-SiC MOSFET hybrid modules combine the high current-carrying capacity of IGBTs with the high-frequency and high-efficiency characteristics of SiC MOSFETs, leveraging the complementary advantages of both devices. They also offer lower switching losses than IGBT modules and lower cost than all-SiC solutions, achieving a compromise between performance and cost. Packaging power chips into hybrid power modules reduces parasitic parameters and optimizes thermal management, simplifying system design and layout and improving system reliability. However, the Si IGBTs and SiC MOSFETs within hybrid power modules generate different amounts of heat due to the different currents they carry. This, combined with the varying thermal resistances caused by varying chip sizes, further leads to varying chip junction temperatures, potentially causing the SiC MOSFET junction temperature to exceed its specified temperature limit, impacting the module's long-term reliability.

[0031] See also Figure 1 , Figure 1 This is a schematic diagram of an existing hybrid full-bridge module structure. This module has two operating modes, addressing the high switching losses and low switching frequency of IGBTs. It also solves the high ripple problem of inverters built with IGBTs, achieving good module performance at a low cost. However, this structure still has the following issues. First, the packaging design is based on a conventional module structure, lacking targeted thermal optimization for the power chips within the hybrid power module. This can lead to significant differences in junction temperature between the Si IGBT and SiC MOSFET within the module, limiting the performance of the hybrid power module. Excessively high junction temperatures in one component can cause thermal failure or accelerate device aging, impacting the module's long-term reliability. Second, this structure lacks comprehensive optimization of parasitic parameters and ignores the uneven length of the commutation loops between the power chips within the module. Under short-circuit conditions, SiC MOSFETs in shorter loops bear greater current stress due to their smaller parasitic inductance, making them more susceptible to overcurrent and overheating failures. Finally, this packaging structure cannot detect branch currents, making real-time monitoring and protection of the hybrid power module difficult.

[0032] See also Figure 2 , Figure 2A schematic diagram of the double-sided heat dissipation packaging structure of an existing hybrid power module. This packaging structure can reduce parasitic parameters and curb the impact of spatially distributed parameters on the high-speed switching performance of MOSFETs. Furthermore, this packaging structure features double-sided heat dissipation, which improves the module's power density. It also features compactness and simple, quick assembly. However, this structure also presents the following issues: First, the commutation loop is long, leaving room for further optimization of parasitic parameters. Second, this structure also fails to implement branch current detection. Furthermore, it fails to specifically optimize the junction temperature difference between the IGBT and MOSFET. Finally, the top metal plate of this structure is connected to the copper-clad ceramic substrate on the bottom metal plate via a socket and a female connector. This connection is poorly reliable and prone to failure due to high stress, especially under long-term vibration conditions.

[0033] Therefore, it is necessary to detect the current carried by the Si IGBT and SiC MOSFET in the hybrid power module and optimize the heat dissipation structure to reduce the junction temperature difference between the Si IGBT and SiC MOSFET. This application proposes a hybrid power module based on Si IGBT and SiC MOSFET. The technical solution of this application is described in detail below with reference to specific embodiments.

[0034] See also Figure 3 , Figure 3 This is a schematic diagram of the structure of a hybrid power module based on Si IGBT and SiC MOSFET in one embodiment of the present application. The hybrid power module provided in this embodiment of the present application includes: a half-bridge structure composed of a Si IGBT chip 05 and a SiC MOSFET chip 06, each bridge arm of the half-bridge structure consisting of a Si IGBT chip 05 and a SiC MOSFET chip 06 connected in parallel and in reverse parallel with a diode; a copper ceramic substrate for carrying the half-bridge structure, the copper-clad ceramic substrate connecting the power terminal 01 and the signal terminal 02; a heat dissipation substrate 11, which is bonded to the copper-clad ceramic substrate, and a plate-fin structure is provided on the side of the heat dissipation substrate 11 facing away from the copper-clad ceramic substrate for heat dissipation, the plate-fin structure being directly opposite to the location of the SiC MOSFET chip 06; and a packaging shell 03, which cooperates with the heat dissipation substrate 11 to seal and package the copper-clad ceramic substrate, wherein the power terminal 01 is integrated on the packaging shell 03.

[0035] See also Figure 4 , Figure 4 FIG. 1 is a schematic diagram of a circuit topology of a hybrid power module in an embodiment of the present application. Figure 4The figure shows a half-bridge structure. Each leg of the half-bridge consists of a parallel connection of a high-current-capacity silicon-based insulated gate bipolar transistor (Si IGBT) chip 05 and a low-current-capacity silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) chip 06. A high-capacity diode is connected in anti-parallel for freewheeling. The diode can be a silicon-based fast recovery diode (Si FRD) chip, but other diode types are also available as needed. By connecting the high-current-capacity Si IGBT and the low-current-capacity SiC MOSFET in parallel, the hybrid power module improves current carrying capacity and reduces cost compared to pure SiC MOSFET devices. Furthermore, gate timing control enables zero-voltage switching of the Si IGBT, reducing switching losses. This makes the hybrid power module's switching speed superior to pure Si IGBTs, making it more suitable for high-frequency applications. Furthermore, the internal parallel structure improves system redundancy, maintaining forward and reverse currents even when a single device fails. Therefore, hybrid power modules offer advantages over single devices in terms of current carrying capacity, switching losses, system redundancy, and cost.

[0036] See also Figure 5 , Figure 5 This is a schematic diagram of the structure of a hybrid power module provided with a shunt resistor 07 in one embodiment of the present application. A SiC MOSFET chip 06 is connected in series with a shunt resistor 07, and the operating status of the corresponding chip is determined by detecting the voltage of the shunt resistor 07. Furthermore, the two ends of the shunt resistor 07 can be led out of the hybrid power module through the signal terminal 02 integrated on the packaging shell 03, so that an external detection device can measure the voltage signal across the two ends of the shunt resistor 07 through the led-out signal terminal 02. For example, voltage detection can be performed using an oscilloscope. When the hybrid power module is operating, the voltage signal across the two ends of the shunt resistor 07 is detected by the oscilloscope and divided by the resistance value of the shunt resistor 07 to obtain the current signal of the SiC MOSFET branch.

[0037] In one embodiment, the power terminals 01 of the hybrid power module can be partially exposed outside the package housing 03. The total current waveform of the hybrid power module can be obtained by measuring the current flowing through the power terminals 01. The current signal of the Si IGBT branch can be obtained by subtracting the current signal of the SiC MOSFET branch from the current signal on a multi-channel oscilloscope. Therefore, the hybrid power module proposed in this application can perform online detection of branch currents. If the current waveform is abnormal, the hybrid power module can be protected by a protection circuit to prevent the hybrid power module from failure due to excessive current stress.

[0038] In one embodiment, in the working state, the current flow direction of the power terminal 01 is perpendicular to the arrangement direction of the Si IGBT chip 05 and the SiC MOSFET chip 06, which can shorten the length of the commutation loop. Figure 6 , Figure 6 This is a schematic diagram of a circulating current loop in one embodiment of the present application. The copper-clad ceramic substrate of the present application is connected to an AC power terminal U, a positive power terminal P, and a negative power terminal N, where the positive power terminal P and the negative power terminal N are DC power terminals. Current flows from the module's positive power terminal P, flows from both sides of the copper-clad ceramic substrate to the upper arm Si IGBT and SiC MOSFET, then flows back through the lower arm FRD and SiC MOSFET through the negative power terminal N. See Figure 7 , Figure 7 This is a schematic diagram of the parasitic parameter simulation results of the hybrid power module in one embodiment of the present application. Due to the short length of the commutation loop and the construction of opposite current paths, when the current flows into the positive power terminal P and out of the negative power terminal, the current flows in opposite directions, making the mutual inductance negative, offsetting part of the conductor's self-inductance. Therefore, the parasitic inductance of the commutation loop is relatively small, and the simulation result is only 10.8 nH. In the embodiment of the present application, the arrangement direction of the three chips in each bridge arm is perpendicular to the current flow from the positive power terminal P to the chip. Therefore, the commutation loop lengths of SiIGBT chip 05 and SiC MOSFET chip 06 are similar, and the difference in parasitic inductance is small. Therefore, SiCMOSFET chip 06 will not face higher current overstress due to the difference in parasitic parameters between its loop and Si IGBT chip 05, which is beneficial to improving the long-term reliability of the hybrid power module.

[0039] See also Figure 8 , Figure 8The figure is a schematic diagram of the existing cylindrical pin-fin 09 heat dissipation structure. Under rated load current, the SiC MOSFET chip 06 in the hybrid power module has a higher conduction voltage drop due to its resistance characteristics, while the Si IGBT chip 05 exhibits a lower voltage drop under large load current due to the conductivity modulation effect. Therefore, the Si IGBT chip 05 will bear more current, but at this time the current borne by the SiC MOSFET chip 06 is also higher than the current of a single chip in a pure SiC MOSFET module. Therefore, the conduction loss of the SiC MOSFET chip 06 in the hybrid power module is higher, and the corresponding heat generation is larger. In addition, the area of ​​a single SiC MOSFET chip 06 is much smaller than the area of ​​a single Si IGBT chip 05, which makes the contact area between the SiC MOSFET chip 06 and the copper-clad ceramic substrate smaller, the heat dissipation path is limited, and the heat cannot be effectively conducted away, resulting in low heat dissipation efficiency. Therefore, the thermal resistance of the SiC MOSFET chip 06 in the hybrid power module is higher than that of the Si IGBT chip 05. Using such Figure 8 In the heat dissipation structure of the uniformly arranged cylindrical pin-fins 09 shown, the heat dissipation conditions of the SiC MOSFET chip 06 and the Si IGBT chip 05 are basically the same. The junction temperature of the SiC MOSFET chip will be much higher than that of the Si IGBT chip 05. The bonding wires and solder layers of the SiC MOSFET chip 06 are more likely to fail due to long-term high temperature and thermal stress, and the reliability of the hybrid power module is reduced. Therefore, it is necessary to optimize the heat dissipation structure to reduce the junction temperature difference between the SiC MOSFET chip 06 and the Si IGBT chip 05.

[0040] Therefore, the side of the heat dissipation substrate 11 away from the copper-clad ceramic substrate is provided with cylindrical pin fins 09 and wavy plate fins 10 for heat dissipation, wherein the wavy plate fins 10 are provided at the corresponding position of the SiC MOSFET chip 06. Figure 9 , Figure 9 This is a schematic diagram of the heat dissipation structure in one embodiment of the present application. The cylindrical pin-fin 09 structure of the heat dissipation substrate 11 in the area directly below the SiC MOSFET chip 06 is replaced by a wavy plate-fin 10 structure. The surface area of ​​the wavy plate-fin 10 structure is larger than that of the cylindrical pin-fin 09 structure, and its contact area with the cooling medium such as air is larger, which can more effectively dissipate heat in a timely manner, thereby reducing the junction temperature of the SiC MOSFET chip 06. The other areas are still cylindrical pin-fin 09 structures, and the heat dissipation effect remains basically unchanged. Therefore, the junction temperature of the IGBT chip changes little. The simulation results show that when liquid cooling is used for heat dissipation, even at a lower liquid flow rate, compared with using Figure 8In the hybrid power module shown above, which features a conventional uniformly arranged cylindrical pin-fin 09 heat dissipation structure, a hybrid power module employing the present invention's hybrid heat dissipation structure of wavy plate fins 10 and cylindrical pin-fin 09 reduces the junction temperature difference between the Si IGBT chip 05 and the SiC MOSFET chip 06 by 5%, while also reducing the junction temperature. In summary, the hybrid heat dissipation structure of wavy plate fins 10 and cylindrical pin-fin 09 proposed in this application can effectively reduce the junction temperature difference between chips and is more suitable for hybrid power modules using Si IGBTs and SiC MOSFETs.

[0041] In one embodiment, the packaging shell 03 is fixed to the heat dissipation substrate 11 by rivets and screws, which increase the connection strength between the packaging shell 03 and the heat dissipation substrate 11 and thus ensure the reliability of the packaging structure.

[0042] In one embodiment, a cover plate 04 may be provided on the side of the packaging shell 03 facing away from the heat dissipation substrate 11, and a cavity for accommodating the copper-clad ceramic substrate is formed between the cover plate 04 and the packaging shell 03. After the copper-clad ceramic substrate is assembled into the cavity, the remaining space is filled with transparent silicone gel and then covered with the cover plate 04 to form a sealing structure, which can further improve the anti-vibration effect.

[0043] In one embodiment, the power terminal 01 is connected to the copper-clad ceramic substrate by an ultrasonic welding process.

[0044] The technical solution of the embodiment of the present application has the following effects:

[0045] The hybrid power module of this application has a shorter commutation loop length, and the construction of opposite current paths results in a negative mutual inductance, resulting in a low parasitic inductance in the commutation loop. Ansys Q3D simulation shows the parasitic inductance between the PN terminals to be only 10.8 nH. Furthermore, compared to existing power modules, the three chips in each bridge arm of this application are arranged perpendicular to the current flow from terminal P to the chip. Therefore, the commutation loop lengths of the Si IGBT chip 05 and the SiC MOSFET chip 06 are similar, and the difference in parasitic inductance is small. Therefore, the SiC MOSFET chip 06 does not face higher current overstress due to the parasitic parameter differences between its loop and the Si IGBT chip 05, which is beneficial for improving the long-term reliability of the hybrid power module. In this application's Si IGBT-SiC MOSFET hybrid power module, a shunt resistor 07 is connected in series with the SiC MOSFET branch, and the two ends of the shunt resistor 07 are connected through the signal terminal 02. Therefore, compared with existing power modules, the hybrid power module proposed in this application can monitor branch currents online. Once the current waveform is abnormal, the hybrid power module can be protected by a protection circuit to prevent the hybrid power module from failing due to excessive current stress. This application proposes a wavy plate fin 10-cylindrical pin fin 09 hybrid heat dissipation structure. The cylindrical pin fin 09 structure of the heat dissipation substrate 11 in the area directly below the SiC MOSFET chip 06 is replaced by a wavy plate fin 10 structure. The surface area of ​​the wavy plate fin 10 structure is larger than that of the cylindrical pin fin 09 structure, and its contact area with cooling media such as air is larger, which can more effectively dissipate heat in a timely manner, thereby reducing the junction temperature of the SiC MOSFET chip 06. The other areas are still cylindrical pin fin 09 structures, and the heat dissipation effect remains basically unchanged. Therefore, the junction temperature of the Si IGBT chip 05 changes less. Simulation results show that, even at a relatively low liquid flow rate (0.1 m / s), when using liquid cooling, the junction temperature of the Si IGBT chip 05 and the SiC MOSFET chip 06 in a hybrid power module using the proposed wavy plate fin 10-cylindrical pin-fin 09 heat dissipation structure is reduced by 1.26°C, and by 3.04°C, compared to a hybrid power module using a conventional uniformly arranged cylindrical pin-fin 09 heat dissipation structure. This reduces the junction temperature difference between the two chips by 5%. The proposed wavy plate fin 10-cylindrical pin-fin 09 heat dissipation structure effectively reduces the junction temperature difference between the chips, lowering the risk of failure of the bonding wires and solder layers of the SiC MOSFET chip 06 due to long-term high temperatures and thermal stress, thereby improving the reliability of the hybrid power module and making it more suitable for Si IGBT-SiC MOSFET hybrid power modules. In existing power modules, the power terminals 01 are independent of the housing, and the power terminals 01 are connected to the copper-clad ceramic substrate via solder.The copper-clad ceramic substrate on the top metal plate and the bottom metal plate is connected via a socket and a busbar, while the power terminal 01 is connected to the copper-clad ceramic substrate via bonding wires. After the power terminal 01 is assembled with the DC busbar, the reliability of the above interconnection method is poor, especially under long-term vibration conditions, where the solder layer and bonding wires that interconnect the power terminal 01 and the copper-clad ceramic substrate are prone to failure due to high stress. In the Si IGBT-SiC MOSFET hybrid power module structure proposed in this application, the package housing 03 and the heat dissipation substrate 11 are fixed together by rivets and screws, the power terminal 01 is integrated into the package housing 03, and the power terminal 01 is connected to the copper-clad ceramic substrate via an ultrasonic welding process. This connection has higher reliability and is more adaptable to long-term vibration conditions.

[0046] See also Figure 10 , Figure 10 Schematic diagram of a manufacturing method of a hybrid power module in one embodiment of the present application. In one embodiment, the present application also proposes a manufacturing method of a hybrid power module, the method comprising the following steps:

[0047] Step S100: soldering the power chip and the shunt resistor 07 onto the copper-clad ceramic substrate and establishing connections through bonding wires;

[0048] Step S110, welding the copper-clad ceramic substrate to the heat dissipation substrate 11;

[0049] Step S120, welding the signal terminal 02 onto the copper-clad ceramic substrate using a tool;

[0050] Step S130, connecting the packaging shell 03 to the heat dissipation substrate 11 by means of sealant, and fixing them by means of screws and rivets;

[0051] Step S140, interconnecting the power terminal 01 and the copper-clad ceramic substrate by ultrasonic welding;

[0052] Step S150: injecting potting glue and curing it, and then covering it with the cover plate 04 to complete the sealing package.

[0053] Specifically, first, the power chip, shunt resistor 07, and NTC resistor are welded to the copper-clad ceramic substrate through screen printing and reflow soldering process; secondly, the power chip and the copper-clad ceramic substrate are interconnected through wire bonding process; then, the copper-clad ceramic substrate is welded to the heat dissipation substrate 11 through screen printing and reflow soldering process; then, the signal terminal 02 is welded to the copper-clad ceramic substrate through tooling; then, the connection between the outer shell and the heat dissipation substrate 11 is completed through sealant, and screws and rivets are assembled for further reinforcement, and then the power terminal 01 and the copper-clad ceramic substrate are interconnected using ultrasonic welding process; finally, potting glue is injected for curing and the cover plate 04 is assembled.

[0054] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A hybrid power module based on Si IGBT and SiC MOSFET, characterized in that: include: A half-bridge structure consisting of a Si IGBT chip and a SiC MOSFET chip, wherein each bridge arm of the half-bridge structure is composed of a Si IGBT chip and a SiC MOSFET chip connected in parallel and in reverse parallel with a diode; A copper-clad ceramic substrate, which is used to carry the half-bridge structure, and the copper-clad ceramic substrate is connected to the power terminal and the signal terminal; A heat dissipation substrate is bonded to the copper-clad ceramic substrate; a plate-fin structure is provided on a side of the heat dissipation substrate facing away from the copper-clad ceramic substrate for heat dissipation, and the plate-fin structure is directly opposite to the location of the SiC MOSFET chip; the plate-fin structure includes a wavy shape, and a cylindrical pin-fin is further provided on a side of the heat dissipation substrate facing away from the copper-clad ceramic substrate for heat dissipation, and the cylindrical pin-fin is directly opposite to the location of the Si IGBT chip; A packaging shell cooperates with the heat dissipation substrate to seal and package the copper-clad ceramic substrate, wherein the power terminal is integrated on the packaging shell; the SiC MOSFET chip is connected in series with a shunt resistor, and the operating status of the corresponding chip is determined by detecting the voltage across the shunt resistor.

2. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 1, characterized in that: The two ends of the shunt resistor are led out through the signal terminal to perform current detection.

3. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 1, characterized in that: In the working state, the current flow direction of the power terminal is perpendicular to the arrangement direction of the Si IGBT chip and the SiC MOSFET chip, so as to shorten the length of the commutation loop.

4. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 1, characterized in that: The packaging shell and the heat dissipation substrate are fixed by rivets and screws.

5. The hybrid power module based on Si IGBT and SiC MOSFET according to claim 1, characterized in that: The power terminal is connected to the copper-clad ceramic substrate through an ultrasonic welding process.

6. A method for manufacturing a hybrid power module based on Si IGBT and SiC MOSFET according to any one of claims 1 to 5, characterized in that: include: Solder the power chip and shunt resistor on the copper-clad ceramic substrate and establish connections through bonding wires; Welding the copper-clad ceramic substrate onto a heat dissipation substrate; Soldering the signal terminals onto the copper-clad ceramic substrate using a tool; Connecting the packaging shell to the heat dissipation substrate through sealant and fixing them with screws and rivets; interconnecting the power terminals to the copper-clad ceramic substrate by ultrasonic welding; After the potting compound is injected and solidified, the cover is put on to complete the sealing package.

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