Heating chamber and reaction chamber

Abstract

The invention discloses a heating chamber and a reaction chamber, and the heating chamber is internally provided with a base material transmission channel which is used for transmitting a base material and is provided with a base material taking and placing position for taking and placing the base material; the gas transmission growth cavity and the base material transmission channel are arranged in parallel, and an epitaxial growth position for epitaxial growth of the base material is formed on the gas transmission growth cavity; and a transmission inlet / outlet of the base material transmission channel and an air inlet of the gas transmission growth cavity are positioned on the same side of the heating chamber. Therefore, when the transmission device carries the base material carrying platform to enter and exit from the base material transmission channel, the transmission device only passes through the upstream space of the reaction chamber and does not pass through the downstream space of the reaction chamber generating the dust-shaped by-products, so that the defect problem of the surface of the base material caused by particulate matters in the downstream space can be greatly reduced; meanwhile, the heating chamber is easier to maintain, and the heating chamber and the downstream space can be maintained without separating the conveying device when being cleaned.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more specifically to a heating chamber, and also to a reaction chamber including the heating chamber. Background Art

[0002] The gaseous raw materials in the high-temperature reaction chamber will undergo a chemical reaction in the downstream space, that is, between the heating chamber and the exhaust system to generate dust-like by-products.

[0003] In the epitaxial growth equipment in the prior art, at the beginning of each epitaxial growth process, the substrate carrier conveying device needs to place the carrier carrying the substrate from the downstream space through the dusty by-product area into the heating chamber. Dust particles and other foreign matter that fall during this process will eventually cause the product quality to be seriously degraded or even scrapped. At the end of each process, the substrate carrier conveying device needs to pick up the product and take it out through the dusty by-product area of ​​the downstream space. The dust particles that fall during this process increase the additional cleaning cost of the equipment. Summary of the invention

[0004] In view of this, the present application provides a heating chamber and also provides a reaction chamber including the above-mentioned heating chamber, which solves the problem that the product quality is degraded due to the influence of excessive dust by-products in the downstream space and the equipment maintenance and cleaning costs are high.

[0005] In order to achieve the above objectives, this application provides the following technical solutions: A heating chamber for epitaxial growth of a substrate; the heating chamber is formed with a receiving space; the receiving space is formed with: A substrate transport channel, used for transporting the substrate, and having a substrate placement position for placing and taking the substrate; A gas transmission growth chamber is arranged in parallel with the substrate transmission channel and is formed with an epitaxial growth position for epitaxial growth of the substrate; Wherein, the transmission inlet and outlet of the substrate transmission channel and the gas inlet of the gas transmission growth chamber are located on the same side of the heating chamber.

[0006] Optionally, in the above-mentioned heating chamber, the heating chamber also includes an isolation plate formed between the substrate transmission channel and the gas transmission growth chamber, so that the reaction gas can be transported to the epitaxial growth position separately; the isolation plate is provided with a connecting port connecting the substrate loading and unloading position with the epitaxial growth position.

[0007] Optionally, in the above-mentioned heating chamber, a supporting tray is provided in the heating chamber; The supporting tray can support the substrate located at the substrate picking and placing position, and the supporting tray can reciprocate between the substrate picking and placing position and the epitaxial growth position.

[0008] Optionally, in the heating chamber, The substrate transmission channel is located at the bottom of the gas transmission growth chamber; the isolation plate is the bottom plate of the gas transmission growth chamber; the area where the communication port is located is the epitaxial growth position; or, The substrate transmission channel is located at the top of the gas transmission growth chamber; the isolation plate is the top plate of the gas transmission growth chamber; an avoidance gap is opened on the bottom plate of the gas transmission growth chamber, and the area where the avoidance gap is located is the epitaxial growth position.

[0009] Optionally, in the above-mentioned heating chamber, the gas transmission growth chamber includes a bottom plate; at least one top plate is formed on the top of the bottom plate, and the bottom plate and the top plate form the gas transmission growth chamber; The multiple layers of top plates are arranged at intervals, and the top plates can be detachably installed in the heating chamber to change the flow cross-sectional area of ​​the gas transmission growth chamber.

[0010] Optionally, in the above-mentioned heating chamber, the heating chamber comprises a heating chamber body with openings at both ends; the heating chamber body forms the accommodation space; The outer periphery of the heating chamber body is sealed and covered with a heat insulating member.

[0011] Optionally, in the above-mentioned heating chamber, support partitions are provided in the heating chamber body near the openings on both sides thereof.

[0012] Optionally, in the above-mentioned heating chamber, a support frame assembly is formed at the bottom of the heating chamber; a driving assembly is provided below the support frame assembly; a transmission rod of the driving assembly enters into the heating chamber and supports the supporting tray.

[0013] A reaction chamber comprises an upstream space, an epitaxial growth space and a downstream space which are connected in sequence; the epitaxial growth space is the accommodation space formed by the heating chamber described above.

[0014] Optionally, in the above-mentioned reaction chamber, the reaction chamber comprises a quartz chamber with openings at both ends; the openings at both ends of the quartz chamber are respectively sealed and connected with an upstream flange and a downstream flange; The heating chamber is located in the middle area of ​​the quartz chamber; The space between the upstream flange and the heating chamber is the upstream space; The space between the downstream flange and the heating chamber is the downstream space.

[0015] Optionally, in the above-mentioned reaction chamber, a heating coil is wound around the corresponding periphery of the quartz chamber and the heating chamber; the heating coil is energized to cause the heating chamber to generate induction heat.

[0016] Optionally, in the above-mentioned reaction chamber, the side wall of the quartz chamber is a hollow structure; and the hollow structure is filled with cooling liquid.

[0017] Optionally, in the above reaction chamber, the upstream flange is provided with a take-in and take-out port; a sealing valve is provided at the take-in and take-out port; The upstream space includes an upstream substrate transmission channel communicated with the substrate transmission channel, and the upstream substrate transmission channel is communicated with the loading and unloading port of the upstream flange.

[0018] Optionally, in the above reaction chamber, the interior of the upstream flange is a hollow structure; the hollow structure forms an air chamber; The upstream space includes an air inlet pipeline connected to the gas transmission growth chamber; the air inlet pipeline is connected to the air chamber.

[0019] Optionally, in the above reaction chamber, An air-distributing plate is provided at the connection point between the air chamber and the air inlet pipe; A support plate is fixed in the circumferential direction of the upstream space; a support opening for supporting the upstream substrate transmission channel and a through hole for the air intake pipe to pass through are formed on the support plate.

[0020] Optionally, in the above-mentioned reaction chamber, a gas extraction system connected to the gas transmission growth chamber is arranged in the downstream space.

[0021] Optionally, in the above-mentioned reaction chamber, the downstream flange is a hollow annular structure, one end opening of the downstream flange is sealed and connected to the quartz chamber, and the other end opening is sealed and connected to the capping flange; The downstream flange is formed with an exhaust passage; the exhaust gas pipeline of the exhaust system is arranged in the exhaust passage.

[0022] Optionally, in the above reaction chamber, The heating chamber comprises a side wall and a bottom wall; the side wall of the heating chamber is an arched structure, and the bottom wall of the heating chamber is a flat structure; The quartz chamber comprises a side wall and a bottom wall; the side wall of the quartz chamber is an arched structure, and the bottom wall of the quartz chamber is a plane structure; A first sealing ring is provided between the upstream flange and the quartz chamber; A second sealing ring is provided between the downstream flange and the quartz chamber; The upstream flange is a hollow structure, and the hollow structure of the upstream flange is filled with coolant; The downstream flange is a hollow structure, and the hollow structure of the downstream flange is filled with coolant; The capping flange is a hollow structure, and the hollow structure of the capping flange is filled with coolant; The capping flange is provided with an observation window and / or a temperature measuring hole; The reaction chamber is provided with a temperature sensor to measure the temperature in the heating chamber.

[0023] In the heating chamber and reaction chamber provided by the present application, the transmission inlet and outlet of the substrate transmission channel and the air inlet of the gas transmission growth chamber are located on the same side of the heating chamber, that is, the transmission inlet and outlet of the substrate transmission channel are located at the front end of the heating chamber; correspondingly, the transmission device for transmitting the substrate carrier is no longer arranged in the rear section of the heating chamber, that is, the downstream space of the reaction chamber, but is arranged in the front section of the heating chamber, that is, the upstream space of the reaction chamber; as mentioned above, when the transmission device carries the substrate carrier in and out of the substrate transmission channel, the transmission device only passes through the upstream space of the reaction chamber, and no longer passes through the downstream space of the reaction chamber where dust-like by-products are generated, which can greatly reduce the problem of defects on the substrate surface caused by particulate matter in the downstream space; at the same time, it is simpler to maintain the heating chamber, and when cleaning the heating chamber and the downstream space, maintenance can be done without separating the transmission device. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are merely embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0025] Figure 1 This is a schematic diagram of the structure of the heating chamber of Example 1 in this application.

[0026] Figure 2 This is an exploded view of the heating chamber of Example 1 in this application.

[0027] Figure 3 This is a schematic structural diagram of the carrier tray of Example 1 in the present application located at the epitaxial growth position.

[0028] Figure 4 This is a schematic structural diagram of the carrying tray of Example 1 of the present application located at the substrate placement position.

[0029] Figure 5 This is a schematic diagram of the structure in which part of the top plate is not installed and the carrying tray is located at the epitaxial growth position in Example 1 of the present application.

[0030] Figure 6 This is a schematic diagram of the structure of Example 1 of the present application in which part of the top plate is not installed and the carrying tray is located at the substrate loading and unloading position.

[0031] Figure 7 This is a schematic diagram of the structure of the heating chamber of Example 2 in this application.

[0032] Figure 8 This is an exploded view of the heating chamber of Example 2 in this application.

[0033] Fig. 9 This is a schematic structural diagram of the supporting tray of Example 2 in the present application located at the epitaxial growth position.

[0034] Fig.10 This is a schematic structural diagram of the carrying tray of Example 2 of the present application located at the substrate placement position.

[0035] Fig.11 It is a schematic diagram of the structure of the supporting tray in this application.

[0036] Fig.12 It is a schematic diagram of the structure of the supporting tray in this application.

[0037] Fig.13 It is a schematic diagram of the structure of the supporting tray in this application.

[0038] Fig.14 Schematic diagram of the structure of the reaction chamber in this application.

[0039] Figure 1-Figure 14 middle: 1. Substrate transmission channel; 2. Gas transmission growth chamber; 3. Isolation plate; 4. Support tray; 5. Top plate; 6. Heating chamber body; 7. Heat insulation; 8. Supporting partition; 9. Support frame assembly; 10. Transfer rod; 11. Heating chamber; 12. Quartz chamber; 13. Upstream flange; 14. Downstream flange; 15. Heating coil; 16. Sealing valve; 17. Upstream substrate transmission channel; 18. Air inlet pipeline; 19. Air inlet pipeline; 20. Air uniformity plate; 21. Support plate; 22. Exhaust system; 23. Capping flange; 24. First sealing ring; 25. Transmission chamber; 26. Side support plate; 301, connecting port; 401, tray support; 402, tray surface; 701, first thermal insulation member; 702, second thermal insulation member; 703, third thermal insulation member; 704, fourth thermal insulation member; 801, first supporting baffle; 802, second supporting baffle; 1901, first quartz gas inlet section; 1902, graphite gas inlet section; 1903, second quartz gas inlet section; 4021. Center plane; 4022. Torus. DETAILED DESCRIPTION

[0040] The present application provides a heating chamber and also provides a reaction chamber including the heating chamber.

[0041] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0042] like Figure 1-13 As shown, the present application provides a heating chamber; the heating chamber 11 is formed with an accommodating space. A substrate transmission channel 1 and a gas transmission growth chamber 2 are arranged in parallel up and down in the accommodating space, and the transmission inlet and outlet of the substrate transmission channel 1 and the air inlet of the gas transmission growth chamber 2 are located on the same side of the heating chamber. The substrate transmission channel 1 is used to transmit the substrate, and is formed with a substrate placement position for taking and placing the substrate. The gas transmission growth chamber 2 is arranged in parallel with the substrate transmission channel 1, and is formed with an epitaxial growth position for epitaxial growth of the substrate.

[0043] It should be noted that the transmission device can enter and exit the substrate transmission channel 1 along the transmission inlet and outlet of the substrate transmission channel 1; the transmission device is no longer arranged in the rear section of the heating chamber 11, that is, the downstream space of the reaction chamber, but is arranged in the front section of the heating chamber 11, that is, the upstream space of the reaction chamber.

[0044] It should be further explained that the transmission device places the carrier carrying the substrate at the substrate pick-up and placement position, or removes the substrate carrier located at the substrate pick-up and placement position. The substrate is a wafer.

[0045] When the substrate is epitaxially grown in the heating chamber 11 , the gas transport growth chamber 2 is always filled with flowing reaction gas to fully react with the substrate.

[0046] As described above, when the transmission device carries the substrate carrier in and out of the substrate transmission channel 1, the transmission device only passes through the upstream space of the reaction chamber, and no longer passes through the downstream space of the reaction chamber where dust-like by-products are generated. This can greatly reduce the problem of defects on the surface of the substrate caused by the by-products in the downstream space; at the same time, it is simpler to maintain the heating chamber, and when cleaning the heating chamber and the downstream space, maintenance can be performed without separating the transmission device.

[0047] Please see attached Figure 3-6 , Attachment Figure 8-10 , and attached Fig.14 In some embodiments of the present application, the heating chamber further includes an isolation plate 3 formed between the substrate transmission channel 1 and the gas transmission growth chamber 2, so that the reaction gas is transported to the epitaxial growth position along the substrate transmission channel 1 alone. The isolation plate 3 is provided with a connecting port 301 connecting the substrate loading and unloading position and the epitaxial growth position.

[0048] By setting up the isolation plate 3, the substrate transmission channel 1 can be isolated from the gas transmission growth chamber 2, so that the reaction gas circulating in the gas transmission growth chamber 2 will no longer diffuse into the substrate transmission channel 1. Therefore, the substrate transmission channel 1 will not produce large particle by-products or dust-like by-products due to contact with the reaction gas in either the area near the upstream space or the area near the downstream space. Furthermore, when the transmission device only passes through the upstream space of the reaction chamber to enter and exit, it can also effectively avoid the problem of defects on the substrate surface caused by dust-like by-products in the upstream space.

[0049] Please see attached Figure 3-6 , Attachment Figure 8-10 In some embodiments of the present application, a supporting tray 4 is provided in the heating chamber 11. The supporting tray 4 can support a substrate carrier (or a substrate, hereinafter both the substrate and the substrate carrier are collectively referred to as a substrate carrier) located at the substrate pick-up and placement position, and the supporting tray 4 can reciprocate between the substrate pick-up and placement position and the epitaxial growth position.

[0050] In some embodiments, the supporting tray 4 can also rotate.

[0051] Please see attached Figure 4 , 6 , 10, the supporting tray 4 moves to the substrate pick-up and placement position; then the transmission device enters the substrate transmission channel 1, and places the substrate carrier carried by the transmission device onto the supporting tray 4; then the transmission device exits the substrate transmission channel 1; please refer to the attached Figure 3 , 5 9. After the supporting tray 4 carries the substrate carrier, it drives the substrate carrier to move to the epitaxial growth position; the supporting tray 4 receives the substrate and performs epitaxial growth at the epitaxial growth position; after the epitaxial growth is completed, the supporting tray 4 carries the substrate carrier and moves to the substrate pick-up and placement position; the transmission device enters the substrate transmission channel 1 and takes away the substrate carrier located on the supporting tray 4; then the transmission device carries the substrate whose reaction is completed and exits the substrate transmission channel 1.

[0052] By setting up the supporting tray 4, accurate, fast and reliable position switching of the substrate between the substrate picking and placing position and the epitaxial growth position is achieved; the entire movement process can be controlled by setting a program, and there is no need for human intervention to cause contamination to the substrate surface, further ensuring the cleanliness of the substrate surface.

[0053] Example 1 Please see attached Figure 1-6 The heating chamber 11 is a bottom pick-up structure, that is, the substrate transmission channel 1 is located at the bottom of the gas transmission growth chamber 2. The isolation plate 3 is the bottom plate of the gas transmission growth chamber 2; the area where the communication port 301 is located is the epitaxial growth position.

[0054] At this time, the supporting tray 4 is located in the substrate transmission channel 1 at the bottom; after the supporting tray 4 located at the substrate pick-up and placement position supports the substrate carrier, the supporting tray 4 moves upward to the epitaxial growth position (i.e., the connecting port 301). After the epitaxial growth of the substrate located at the epitaxial growth position is completed, the supporting tray 4 moves downward to the substrate pick-up and placement position.

[0055] Example 2 Please see attached Figure 6-10 The heating chamber 11 is an upper pick-up structure, that is, the substrate transmission channel 1 is located at the top of the gas transmission growth chamber 2. The isolation plate 3 is the top plate of the gas transmission growth chamber 2; an avoidance gap is opened on the bottom plate of the gas transmission growth chamber 2, and the area of ​​the avoidance gap is the epitaxial growth position.

[0056] At this time, the supporting tray 4 is located in the top substrate transmission channel 1; after the supporting tray 4 located at the substrate pick-up and placement position supports the substrate carrier, the supporting tray 4 moves downward through the connecting port 301 to the epitaxial growth position (i.e., the avoidance gap). After the epitaxial growth of the substrate located at the epitaxial growth position is completed, the supporting tray 4 moves upward through the connecting port 301 to the substrate pick-up and placement position.

[0057] Please see attached Figure 2 , 8 In some embodiments of the present application, the gas transmission growth chamber 2 includes a bottom plate; at least one top plate 5 is formed on the top of the bottom plate, and the bottom plate and the top plate 5 form the gas transmission growth chamber 2. The multiple top plates 5 are arranged at intervals, and the top plates 5 can be detachably installed in the heating chamber 11 to change the flow cross-sectional area of ​​the gas transmission growth chamber 2.

[0058] It should be noted that both the bottom plate and the top plate 5 are made of graphite plates.

[0059] For further information, please see the attached Figure 2 When the substrate transmission channel 1 is located at the bottom of the gas transmission growth chamber 2, the isolation plate 3 is the bottom plate of the gas transmission growth chamber 2; two side support plates 26 are respectively arranged on both sides of the isolation plate 3 and the top plate 5 along the left and right directions, and the two side support plates 26, the isolation plate 3, and the top plate 5 together enclose the gas transmission growth chamber 2.

[0060] For further information, please see the attached Figure 8 When the substrate transmission channel 1 is located at the top of the gas transmission growth chamber 2, the gas transmission growth chamber 2 includes a bottom plate; at least one top plate 5 is formed on the top of the bottom plate, and the isolation plate 3 is the top plate of the gas transmission growth chamber 2. Two side support plates 26 are respectively arranged on both sides of the bottom plate and the isolation plate 3 along the left and right directions. The two side support plates 26, the bottom plate, and the isolation plate 3 together enclose the gas transmission growth chamber 2.

[0061] The inner wall of the heating chamber 11 is formed with a clamping groove, which extends along the transmission direction of the reaction gas; two clamping grooves located opposite to each other on the left and right form a clamping groove group; along the up and down direction, the clamping groove group is formed into multiple pairs. The bottom plate and multiple top plates 5 are clamped and fixed in the multiple pairs of clamping groove groups in sequence.

[0062] When the heating chamber 11 is attached Figure 2 When the heating chamber 11 is placed in the position shown, the left and right directions and the up and down directions. Figure 2 Direction indicated by the arrow.

[0063] It should be further explained that when it is necessary to gradually expand the flow cross-sectional area of ​​the gas transmission growth chamber 2, multiple top plates 5 can be removed in sequence from bottom to top.

[0064] Of course, the heating chamber 11 in the present application is provided with a plurality of pairs of snap-in groove groups, and all the top plates 5 can be removed, and then one of the top plates 5 can be selected and placed in the snap-in groove group at a suitable position according to the required flow cross-sectional area of ​​the gas transmission growth chamber 2.

[0065] As described above, the flow cross-sectional area of ​​the gas transmission growth chamber 2 can be flexibly adjusted to verify the optimal process parameters for epitaxial growth of the substrate surface by reaction gases with different flow cross-sectional areas.

[0066] In some embodiments of the present application, the heating chamber 11 includes a heating chamber body 6 with openings at both ends. The heating chamber body 6 forms a receiving space. The outer periphery of the heating chamber body 6 is sealed and covered with a heat insulating member 7.

[0067] By sealing and wrapping the heat insulating member 7 around the periphery of the heating chamber body 6, it can be ensured that the heat generated in the heating chamber body 6 is not rapidly dissipated to the outside, thereby ensuring that the substrate is epitaxially grown under high-temperature reaction gas.

[0068] Please see attached Figure 1-2 , attached Fig.14 In some embodiments, the heat insulating member 7 includes a first heat insulating member 701 with openings at both ends. The first heat insulating member 701 is an arched structure with a bottom opening. The first heat insulating member 701 is provided with fourth heat insulating members 704 at two opposite bottom edges. There is a gap between the first heat insulating member 701 and the fourth heat insulating member 704 to prevent the formation of a circular current on the first heat insulating member 701 and the fourth heat insulating member 704 when the heating coil is induced to heat the heating coil when the heating coil is subsequently provided on the outer circumference of the heating chamber. The heating coil will be described in detail below. The heat insulating member 7 also includes a second heat insulating member 702 and a third heat insulating member 703 that respectively seal the openings at both ends formed by the first heat insulating member 701 and the fourth heat insulating member 704.

[0069] Please see attached Figure 1Furthermore, the second thermal insulation member 702 is provided with a first opening connected to the transmission inlet and outlet of the substrate transmission channel 1 and the air inlet of the gas transmission growth chamber 2; the third thermal insulation member 703 is provided with a second opening connected to the air outlet of the gas transmission growth chamber 2.

[0070] In some embodiments, the thermal insulation member 7 is made of graphite felt.

[0071] In certain embodiments of the present application, support partitions 8 are provided in the heating chamber body 6 near the openings on both sides thereof.

[0072] Please see attached Fig.14 It should be noted that the supporting partition 8 includes a first supporting partition 801 close to the second thermal insulation member 702 and a second supporting partition 802 close to the third thermal insulation member 703 .

[0073] Furthermore, the first supporting baffle 801 does not block the gas inlet of the gas transmission growth chamber 2 and the transmission inlet and outlet of the substrate transmission channel 1 ; the second supporting baffle 802 does not block the gas outlet of the gas transmission growth chamber 2 .

[0074] The first supporting baffle 801 and the second supporting baffle 802 realize the isolation and blocking of the heating chamber body 6 from the second thermal insulation member 702 and the third thermal insulation member 703 respectively, thereby effectively preventing the graphite particles dropped from the second thermal insulation member 702 and the third thermal insulation member 703 from drifting into the accommodating space formed by the heating chamber body 6, thereby ensuring the cleanliness of the interior of the heating chamber 11.

[0075] Please see attached Figure 2 In some embodiments, a first support mounting position is provided at the first end opening of the inner side wall of the heating chamber body 6, and the first support partition 801 is fixed at the first support mounting position; a second support mounting position is provided at the second end opening of the inner side wall of the heating chamber body 6, and the second support partition 802 is fixed at the second support mounting position.

[0076] Furthermore, a plurality of first mounting grooves are formed along the circumference of the first end opening of the heating chamber body 6; a plurality of first protrusions adapted to be clamped and fixed with the first mounting grooves are formed along the circumference of the first support partition 801. A plurality of second mounting grooves are formed along the circumference of the second end opening of the heating chamber body 6; a plurality of second protrusions adapted to be clamped and fixed with the second mounting grooves are formed along the circumference of the second support partition 802.

[0077] Furthermore, along the sequential arrangement direction of the multiple top plates 5, the first support partition 801 is provided with multiple first support grooves, and the second support partition 802 is provided with multiple second support grooves; at least one end of some of the top plates 5 is clamped in the first support groove, and the other end is clamped in the second support groove.

[0078] Please see attached Figure 1 , attached Figure 3-6 , attached Figure 7-10 , attached Fig.14 In some embodiments of the present application, a support frame assembly 9 is formed at the bottom of the heating chamber 11. A driving assembly is provided below the support frame assembly 9. A transmission rod 10 at the top of the driving assembly is located at the central axis of the heating chamber. The driving assembly has lifting and rotating functions, and can drive the lifting and rotating actions of the supporting tray 4 through the transmission rod 10. The transmission rod 10 of the driving assembly can enter the heating chamber 11 to support the supporting tray 4.

[0079] It should be noted that the support frame assembly 9 is a quartz boat support structure.

[0080] The support frame assembly 9 and the central axis of the quartz chamber are positioned in cooperation with each other to ensure that the position of the support frame assembly 9 and the heating chamber 11 is fixed each time the support frame assembly 9 is installed, so as to reproduce the consistency of the process results of each batch.

[0081] The bottom surface of the heating chamber 11 has an opening in the middle; the transmission rod 10 of the driving assembly is sealed and enters into the heating chamber 11.

[0082] In some embodiments, please refer to the attached Fig.12 The supporting tray 4 of the present application includes a tray support 401 and a tray surface 402, and the tray support 401 is fixed to the transfer rod 10. Fig.11 The tray surface 402 is an integrated structure, and the tray surface 402 is fixed to the tray support 401. Alternatively, please refer to the attached Figure 12-13 The tray surface 402 is a combined structure, which is composed of two components, that is, the tray surface 402 includes a center surface 4021 and a torus surface 4022, the torus surface 4022 is located on the outer circumference of the center surface 4021, the center surface 4021 is fixed on the tray support 401, and the torus surface 4022 can be detachably installed relative to the tray support 401. Since the edge of the tray surface 402 is easily contaminated by the gas of epitaxial growth during the epitaxial growth of the wafer, the tray surface 402 needs to be replaced regularly, and the tray surface 402 is set in the form of a combination of the center surface 4021 and the detachably installed torus surface 4022, which reduces the material cost of regularly replacing the tray surface 402, and the replacement and installation are convenient and fast.

[0083] Please see attached Fig.14 In summary, the present application also provides a reaction chamber; the reaction chamber includes an upstream space, an epitaxial growth space, and a downstream space connected in sequence; the epitaxial growth space is the accommodating space formed by the heating chamber 11 described above.

[0084] Since the reaction chamber of the present application has the heating chamber 11 described above, the beneficial effects of the heating chamber 11 on the reaction chamber can be found above and will not be described in detail here.

[0085] In some embodiments of the present application, the reaction chamber includes a quartz chamber 12 with openings at both ends. The openings at both ends of the quartz chamber 12 are respectively sealed and connected with an upstream flange 13 and a downstream flange 14. The heating chamber 11 is located in the middle area inside the quartz chamber 12. The space between the upstream flange 13 and the heating chamber 11 is the upstream space. The space between the downstream flange 14 and the heating chamber 11 is the downstream space.

[0086] The present application obtains an upstream space, an epitaxial growth space and a downstream space that are connected and sealed in sequence through the combined structure of the quartz chamber 12, the upstream flange 13 and the downstream flange 14. It not only has a simple structure, but also ensures that the interior of the reaction chamber is always in a vacuum environment.

[0087] In certain embodiments of the present application, a heating coil 15 is wound around the corresponding outer periphery of the quartz chamber 12 and the heating chamber 11 ; the heating coil 15 is energized to cause the heating chamber body 6 to generate induction heat.

[0088] The heating coil 15 fixed outside the quartz chamber 12 performs non-contact heating on the heating chamber body 6 of the heating chamber 11 .

[0089] Furthermore, the outer periphery of the heating chamber body 6 is covered with a heat insulating member 7, which can prevent the heat generated by the heating chamber body 6 from dissipating to the quartz chamber 12, and prevent the temperature of the position corresponding to the quartz chamber 12 and the heating chamber body 6 from being too high. At the same time, a certain gap is ensured between the heat insulating member 7 and the quartz chamber 12, thereby effectively preventing the heat insulating member 7 from being crushed by the heating chamber body 6 after expansion.

[0090] In some embodiments of the present application, the side wall of the quartz chamber 12 is a hollow structure; the hollow structure is filled with cooling liquid.

[0091] As described above, the quartz chamber 12 is cooled, thereby avoiding the risk of burns to operators caused by the excessively high temperature of the outer surface of the quartz chamber.

[0092] Please see attached Fig.14 In some embodiments of the present application, the upstream flange 13 is provided with a take-in / take-out port; a sealing valve 16 is provided at the take-in / take-out port. The upstream space includes an upstream substrate transmission channel 17 connected to the substrate transmission channel 1, and the upstream substrate transmission channel 17 is connected to the take-in / take-out port of the upstream flange 13.

[0093] The sealing valve 16 is a SV valve. When the sealing valve 16 is opened, the reaction chamber and the transmission chamber 25 carrying the transmission device can be connected, thereby allowing the robot arm of the transmission device to enter the reaction chamber from the transmission chamber 25 .

[0094] Please refer to the attached figure, Fig.14In some embodiments, the interior of the upstream flange 13 is a hollow structure; the hollow structure forms an air chamber; the upstream space includes an air intake pipe 19 connected to the gas transmission growth chamber 2; the air intake pipe 19 is connected to the air chamber.

[0095] It should be noted that multiple air inlet pipes 18 are integrated above the upstream flange 13 to divide the air inlet into multiple partitions. The hollow structure of the upstream flange is processed into multiple air chambers; each air inlet pipe 18 is connected to each air chamber to separately transmit the reaction gas to the gas transmission growth chamber 2.

[0096] It should be further explained that the air inlet pipe 19 includes a first quartz air inlet section 1901, a graphite air inlet section 1902, and a second quartz air inlet section 1903 which are connected in sequence; the second quartz air inlet section 1903 is connected to the gas transmission growth chamber 2.

[0097] Furthermore, the loading and unloading port of the upstream flange 13 is opened below the air chamber formed by the upstream flange 13 , that is, the robot arm of the transmission device in the transmission chamber 25 places the substrate (substrate, i.e., wafer) into the high-temperature reaction chamber through the bottom of the air inlet pipe 19 .

[0098] In some embodiments, an air uniforming plate 20 is provided at the connection point between the air chamber and the air inlet duct 19 .

[0099] It should be noted that the air-distributing plate 20 includes a plate body and a plurality of ventilation holes provided on the plate body. The air-distributing plate 20 is in communication with the first quartz air inlet section 1901 .

[0100] As described above, the reaction gas can be quickly dissipated to the intake pipe 19 , so that a uniform flow is formed in the intake pipe 19 .

[0101] In some embodiments, a support plate 21 is fixed in the circumferential direction of the upstream space; the support plate 21 is provided with a support opening for supporting the upstream substrate transmission channel 17 and a through hole for the air intake pipe 19 to pass through.

[0102] As described above, the air intake duct 19 can be supported and fixed; at the same time, an escape space is formed for the manipulator of the transmission device to freely enter and exit.

[0103] In certain embodiments of the present application, a gas extraction system 22 connected to the gas transport growth chamber 2 is provided in the downstream space.

[0104] It should be noted that after the sealing valve 16 is closed, the process pump of the tail gas pipeline of the exhaust system 22 can keep the reaction chamber always within a stable process pressure range.

[0105] In some embodiments of the present application, the downstream flange 14 is a hollow annular structure, one end opening of the downstream flange 14 is sealed and connected to the quartz chamber 12, and the other end opening is sealed and connected to the capping flange 23. The downstream flange 14 forms an exhaust channel; the exhaust pipeline of the exhaust system 22 is arranged in the exhaust channel.

[0106] It should be noted that the capping flange 23 is connected to the downstream flange 14 , and together with the quartz chamber 12 and the upstream flange 13 , forms a reaction chamber with a vacuum area.

[0107] By opening an exhaust channel at the bottom of the downstream flange 14, the airflow entering the heating chamber 11 is extracted to maintain a relatively constant pressure in the heating chamber 11. By setting the capping flange 23, it is convenient to expose the downstream space, thereby facilitating the cleaning and maintenance of the downstream space.

[0108] In certain embodiments of the present application, the heating chamber 11 includes a side wall and a bottom wall; the side wall of the heating chamber 11 is an arched structure, and the bottom wall of the heating chamber 11 is a flat structure.

[0109] Furthermore, the quartz chamber 12 includes a side wall and a bottom wall; the side wall of the quartz chamber 12 is an arched structure, and the bottom wall of the quartz chamber 12 is a planar structure.

[0110] As mentioned above, the bottoms of the heating chamber 11 and the quartz chamber 12 are both planar structures, which are convenient for support and fixation on the support frame assembly 9 (the support frame assembly 9 is the quartz boat support structure).

[0111] In some embodiments, a first sealing ring 24 is provided between the upstream flange 13 and the quartz chamber 12. Furthermore, a second sealing ring is provided between the downstream flange 14 and the quartz chamber 12. By providing the first sealing ring 24 and the second sealing ring, the sealing effect between the quartz chamber 12 and the upstream flange 13 and the downstream flange 14 is further ensured, and the reaction chamber is always in a vacuum environment.

[0112] Furthermore, the upstream flange 13 is a hollow structure, and the hollow structure of the upstream flange 13 is filled with coolant. As described above, the temperature of the upstream flange 13 can be prevented from being too high, and the first sealing ring 24 at the position of the air homogenizing plate 20 can be prevented from being damaged by the high temperature.

[0113] Furthermore, the downstream flange 14 is a hollow structure, and the hollow structure of the downstream flange 14 is filled with cooling liquid. As described above, the temperature of the downstream flange 14 can be prevented from being too high.

[0114] Furthermore, the capping flange 23 is a hollow structure, and the hollow structure of the capping flange 23 is filled with cooling liquid. The capping flange 23 has a high temperature due to convection heat exchange and radiation from the heating chamber body 6, and usually needs to be filled with cooling water.

[0115] An observation window and a temperature measuring hole are reserved on the capping flange 23 , so that the heating chamber body 6 in the heating chamber 11 can be observed and the temperature measured.

[0116] In some embodiments, the reaction chamber is provided with a temperature sensor to measure the temperature in the heating chamber 11 .

[0117] It should be noted that the temperature sensor is an infrared temperature measuring probe sensor. A lens assembly is formed on the upstream flange 13; an infrared temperature measuring probe bracket is installed on the upstream flange 13; and an infrared temperature measuring probe sensor is installed and fixed on the infrared temperature measuring probe bracket.

[0118] The infrared light emitted by the infrared temperature measuring probe sensor can enter the interior of the heating chamber body 6 through the lens, and then measure the temperature inside the heating chamber body 6.

[0119] The components and devices involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the drawings. As will be appreciated by those skilled in the art, these components and devices can be connected, arranged, and configured in any manner. Words such as "including", "comprising", "having", etc. are open words, meaning "including but not limited to", and can be used interchangeably with them. The words "or" and "and" used here refer to the words "and / or" and can be used interchangeably with them, unless the context clearly indicates otherwise. The word "such as" used here refers to the phrase "such as but not limited to", and can be used interchangeably with it.

[0120] It should also be noted that in the device of the present application, each component can be decomposed and / or reassembled, and these decompositions and / or reassemblies should be regarded as equivalent solutions of the present application.

[0121] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

[0122] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

[0123] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A heating room, characterized in that: Used for epitaxial growth of substrate; the heating chamber is formed with a receiving space; the receiving space is formed with: A substrate transport channel (1) is used to transport the substrate and is formed with a substrate placement position for placing and picking up the substrate; A gas transmission growth chamber (2) is arranged in parallel with the substrate transmission channel (1) and forms an epitaxial growth position for epitaxial growth of the substrate; Wherein, the transmission inlet and outlet of the substrate transmission channel (1) and the gas inlet of the gas transmission growth chamber (2) are located on the same side of the heating chamber.

2. The heating chamber according to claim 1, characterized in that: The heating chamber further comprises an isolation plate (3) formed between the substrate transmission channel (1) and the gas transmission growth chamber (2) so that the reaction gas can be transported to the epitaxial growth position separately; the isolation plate (3) is provided with a connecting port (301) connecting the substrate loading and unloading position with the epitaxial growth position.

3. The heating chamber according to claim 1, characterized in that: A supporting tray (4) is provided in the heating chamber; The supporting tray (4) is capable of supporting the substrate located at the substrate pick-up and placement position, and the supporting tray (4) is capable of reciprocating between the substrate pick-up and placement position and the epitaxial growth position.

4. The heating chamber according to claim 2, characterized in that: The substrate transmission channel (1) is located at the bottom of the gas transmission growth chamber (2); the isolation plate (3) is the bottom plate of the gas transmission growth chamber (2); the area where the communication port (301) is located is the epitaxial growth position; or, The substrate transmission channel (1) is located at the top of the gas transmission growth chamber (2); the isolation plate (3) is the top plate of the gas transmission growth chamber (2); an avoidance gap is provided on the bottom plate of the gas transmission growth chamber (2), and the area where the avoidance gap is located is the epitaxial growth position.

5. The heating chamber according to claim 1, characterized in that: The gas transmission growth chamber (2) comprises a bottom plate; at least one top plate (5) is formed on the top of the bottom plate, and the bottom plate and the top plate (5) form the gas transmission growth chamber (2); Multiple layers of the top plates (5) are arranged at intervals, and the top plates (5) can be detachably mounted on the heating chamber to change the flow cross-sectional area of ​​the gas transmission growth chamber (2).

6. The heating chamber according to any one of claims 1 to 5, characterized in that: The heating chamber comprises a heating chamber body (6) having openings at both ends; the heating chamber body (6) forms the accommodation space; The outer periphery of the heating chamber body (6) is sealed and coated with a heat insulating member (7).

7. The heating chamber according to claim 6, characterized in that: Support partitions (8) are provided in the heating chamber body (6) at positions close to the openings on both sides thereof.

8. The heating chamber according to claim 3, characterized in that: A support frame assembly (9) is formed at the bottom of the heating chamber; a driving assembly is provided below the support frame assembly (9); a transmission rod (10) of the driving assembly enters into the heating chamber and supports the supporting tray (4).

9. A reaction chamber, characterized in that: It comprises an upstream space, an epitaxial growth space, and a downstream space connected in sequence; the epitaxial growth space is the accommodation space formed by the heating chamber (11) according to any one of claims 1 to 8.

10. The reaction chamber according to claim 9, characterized in that: The reaction chamber comprises a quartz chamber (12) having openings at both ends; the openings at both ends of the quartz chamber (12) are respectively sealedly connected to an upstream flange (13) and a downstream flange (14); The heating chamber (11) is located in the middle area inside the quartz chamber (12); The space between the upstream flange (13) and the heating chamber (11) is the upstream space; The space between the downstream flange (14) and the heating chamber (11) is the downstream space.

11. The reaction chamber according to claim 10, characterized in that: A heating coil (15) is wound around the corresponding outer peripheries of the quartz chamber (12) and the heating chamber (11); the heating coil (15) is energized to cause the heating chamber (11) to generate induction heat.

12. The reaction chamber according to claim 10, characterized in that: The side wall of the quartz chamber (12) is a hollow structure; the hollow structure is filled with cooling liquid.

13. The reaction chamber according to claim 10, characterized in that: The upstream flange (13) is provided with a take-in / take-out opening; a sealing valve (16) is provided at the take-in / take-out opening; The upstream space comprises an upstream substrate transmission channel (17) which is in communication with the substrate transmission channel (1), and the upstream substrate transmission channel (17) is in communication with a loading and unloading port of the upstream flange (13).

14. The reaction chamber according to claim 13, characterized in that: The interior of the upstream flange (13) is a hollow structure; the hollow structure forms an air chamber; The upstream space includes an air intake pipe (19) connected to the gas transmission growth chamber (2); the air intake pipe (19) is connected to the air chamber.

15. The reaction chamber according to claim 14, characterized in that: An air-distributing plate (20) is provided at the connection point between the air chamber and the air inlet pipe (19); A support plate (21) is fixed in the circumferential direction of the upstream space; the support plate (21) is provided with a support opening for supporting the upstream substrate transmission channel (17), and a through hole for the air intake pipe (19) to pass through.

16. The reaction chamber according to claim 10, characterized in that: A gas extraction system (22) connected to the gas transmission growth chamber (2) is provided in the downstream space.

17. The reaction chamber according to claim 16, characterized in that: The downstream flange (14) is a hollow annular structure, one end opening of the downstream flange (14) is sealedly connected to the quartz chamber (12), and the other end opening is sealedly connected to the capping flange (23); The downstream flange (14) is formed with an exhaust passage; and the exhaust gas pipeline of the exhaust system (22) is arranged in the exhaust passage.

18. The reaction chamber according to claim 17, characterized in that: The heating chamber (11) comprises a side wall and a bottom wall; the side wall of the heating chamber (11) is an arched structure, and the bottom wall of the heating chamber (11) is a flat structure; The quartz chamber (12) comprises a side wall and a bottom wall; the side wall of the quartz chamber (12) is an arched structure, and the bottom wall of the quartz chamber (12) is a flat structure; A first sealing ring is provided between the upstream flange (13) and the quartz chamber (12); A second sealing ring is provided between the downstream flange (14) and the quartz chamber (12); The upstream flange (13) is a hollow structure, and the hollow structure of the upstream flange (13) is filled with coolant; The downstream flange (14) is a hollow structure, and the hollow structure of the downstream flange (14) is filled with coolant; The capping flange (23) is a hollow structure, and the hollow structure of the capping flange (23) is filled with cooling liquid; The capping flange (23) is provided with an observation window and / or a temperature measuring hole; The reaction chamber is provided with a temperature sensor to measure the temperature in the heating chamber (11).

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