Film deposition equipment chamber temperature field matching method

Abstract

The invention provides a film deposition equipment chamber temperature field matching method. The method comprises the following steps: acquiring original thickness data sets corresponding to a plurality of heating units in an original state; adjusting the power of the plurality of heating units for multiple times, forming a thin film layer on the surface of the wafer after each adjustment, and measuring the thickness of the thin film layer at the plurality of fixed points to obtain a test thickness data set; subtracting the plurality of test thickness data sets from the original thickness data set to obtain a plurality of difference value data sets; calculating the power change rate of each heating unit when the target thickness condition is to be reached based on the plurality of difference data sets, the original thickness data set and the target thickness data set; and calculating the target power of each heating unit based on the power change rate of each heating unit. The obtained target power of the heating unit is high in accuracy, and the temperature field of the thin film deposition equipment can be rapidly adjusted to the target state.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a method for chamber temperature and field matching of a thin film deposition equipment. Background Art

[0002] In the semiconductor manufacturing process, it is essential to use thin film deposition equipment to deposit a growing thin film on the wafer. At present, thin film deposition equipment, such as epitaxial machines, often use multiple bulbs to heat the reaction chamber. The multiple bulbs are divided into multiple heating units to heat the wafer in the reaction chamber and the susceptor that supports the wafer. In addition, multiple heating units will produce energy superposition at the same position of the wafer. The power change of each heating unit will have a greater impact on the temperature field of the reaction chamber. After maintenance (PM), the temperature field matching between different reaction chambers, and the temperature field matching after the machine temperature field hardware upgrade, it is necessary to make the temperature of the wafer at the same position as consistent as possible to ensure the consistency (uniformity) between wafers. Therefore, how to quickly and efficiently achieve chamber temperature field matching needs to be solved urgently. Summary of the invention

[0003] One of the purposes of the present invention is to obtain the target power of each heating unit when the thin film layer on the surface of the wafer reaches the target thickness, so as to quickly adjust the temperature field of the chamber of the thin film deposition equipment to the target state, and quickly and efficiently achieve the matching of the temperature field of the chamber of the thin film deposition equipment.

[0004] In order to achieve the above object, the present invention provides a method for temperature field matching in a chamber of a thin film deposition device, wherein the thin film deposition device comprises a plurality of heating units for forming a temperature field in the chamber. The method for matching the room temperature field of the chamber of the thin film deposition equipment comprises: obtaining an original thickness data group of an original thin film layer corresponding to a plurality of the heating units in an original state, wherein the original thickness data group includes the thickness of the original thin film layer at a plurality of fixed points on the wafer; adjusting the power of the plurality of the heating units multiple times, forming a thin film layer on the surface of the wafer located in the chamber after each adjustment and measuring the thickness of the thin film layer at a plurality of the fixed points to obtain a test thickness data group, and obtaining a plurality of the test thickness data groups after multiple adjustments; calculating the thickness difference between a corresponding point of the test thickness data group and the original thickness data group to obtain a difference data group, and calculating the plurality of the test thickness data groups with the original thickness data group respectively to obtain a plurality of the difference data groups; calculating the power change rate of each of the heating units when reaching the target thickness condition based on the plurality of the difference data groups, the original thickness data group and the target thickness data group, wherein the target thickness data group includes the target thickness of a plurality of the fixed points; and calculating the target power of each of the heating units based on the power change rate of each of the heating units.

[0005] Optionally, in the step of calculating the power change rate of each heating unit when the target thickness condition is reached based on multiple difference data groups, the original thickness data group and the target thickness data group, the power change rate of each heating unit is calculated using Nelder-mead, L-BFGS-B or Powell algorithm.

[0006] Optionally, in the step of adjusting the power of the plurality of heating units multiple times, in one adjustment, only the power parameters of one heating unit are adjusted while the power parameters of the other heating units remain as the original power parameters, and the power parameters of different heating units are adjusted in different adjustments.

[0007] Optionally, the number of the multiple fixed points is m, the number of the multiple heating units is n, the power of the multiple heating units is adjusted n times, m and n are positive integers greater than 1; the original thickness data group is an m×1 matrix A, the multiple difference data groups are an m×n matrix B, the target thickness data group is an m×1 matrix C, and D is an n×1 matrix including the power change rates of the n heating units; wherein, C=A+BD.

[0008] Optionally, the method for calculating the target power of each heating unit based on the power change rate of each heating unit includes: obtaining the original power of each heating unit, and calculating the target power of each heating unit based on the original power of each heating unit and the power change rate of each heating unit.

[0009] Optionally, F is an n×1 matrix including the original powers of n heating units, f i1 is the element in the ith row and first column of the matrix F, E is an n×1 matrix including the target powers of the n heating units, and D is an n×1 matrix including the power change rates of the n heating units, where d i1 is the element of the ith row and the first column in D, H is an n×1 matrix including the power increments of the n heating units, and f i1 *d i1 As the element of the i-th row and the first column in the matrix H, where E=F+H.

[0010] Optionally, at least some steps of the method for matching the temperature field in the chamber of the thin film deposition equipment are executed using a program programmed in Python.

[0011] Optionally, the method for matching the temperature field of the chamber of the thin film deposition equipment further includes: converting the target power of each of the heating units into a power proportion and inputting the power proportion into a machine end.

[0012] Optionally, in the step of adjusting the power of the plurality of heating units multiple times, the power of more than two heating units are adjusted simultaneously in at least some of the adjustments.

[0013] Optionally, in the step of forming a thin film layer on the surface of the wafer in the chamber after each adjustment, Si H 4 A silicon thin film layer is formed on a wafer having a marking layer formed on the surface thereof using silicon source gas, wherein the marking layer is made of a different material from that of the silicon thin film layer.

[0014] In the method for matching the room temperature field of a thin film deposition equipment chamber provided by the present invention, firstly, an original thickness data set of an original thin film layer corresponding to the chamber in an original state is obtained, and the original thickness data set includes the thickness of the original thin film layer at multiple fixed points on a wafer; then, the power of multiple heating units is adjusted multiple times, and after each adjustment, a thin film layer is formed on the surface of the wafer located in the chamber and the thickness of the thin film layer at multiple fixed points is measured to obtain a test thickness data set, and multiple test thickness data sets are obtained after multiple adjustments; then, the thickness difference between the corresponding points of a test thickness data set and the original thickness data set is calculated to obtain a difference data set, and multiple test thickness data sets are combined. The thickness data group is respectively calculated with the original thickness data group to obtain multiple difference data groups; then the power change rate of each heating unit when the target thickness condition is reached is calculated based on the multiple difference data groups, the original thickness data group and the target thickness data group; and the target power of each heating unit is calculated based on the power change rate of each heating unit. In this way, the target power of each heating unit can be obtained quickly and accurately, and then the temperature field of the chamber of the thin film deposition equipment can be quickly adjusted to the target state, and the temperature field of the chamber of the thin film deposition equipment can be matched quickly and efficiently, shortening the time for machine inspection, machine re-inspection and recipe transfer of the thin film deposition equipment, which is helpful to improve the consistency between wafers. Compared with manual adjustment or adjustment of the power or power ratio of the heating unit based on experience, the method of the present application is less affected by subjective factors, and the difficulty of achieving the adjustment destination is relatively small. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of a thin film deposition device provided by an embodiment of the present invention.

[0016] Figure 2 FIG. 4 is a bottom view of an upper heating module according to an embodiment of the present invention.

[0017] Figure 3 FIG. 4 is a top view of a lower heating module according to an embodiment of the present invention.

[0018] Figure 4 A flow chart of a method for temperature field matching in a thin film deposition equipment chamber provided in one embodiment of the present invention.

[0019] Figure 5 An operational section of a program provided by an embodiment of the present invention.

[0020] Figure 6 The following are the corresponding thickness curves of the thin film deposition equipment before and after the upgrade.

[0021] Figure 7 A program interface diagram for calculating a target power ratio using a program provided by an embodiment of the present invention.

[0022] Figure 8 This is the corresponding thickness curve after matching and adjusting the temperature field of the upgraded thin film deposition equipment. DETAILED DESCRIPTION

[0023] In order to quickly adjust the temperature field of the thin film deposition equipment chamber to the target state and quickly and efficiently achieve the matching of the temperature field of the thin film deposition equipment chamber, the present application provides a method for matching the temperature field of the thin film deposition equipment chamber. The thin film deposition equipment includes but is not limited to epitaxial equipment.

[0024] The following is a further detailed description of the method for matching the temperature field of the chamber of the thin film deposition equipment proposed by the present invention in combination with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will become clearer. It should be noted that the accompanying drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0025] Figure 1 A schematic diagram of a thin film deposition device provided by an embodiment of the present invention. Figure 1 As shown, the thin film deposition equipment includes a chamber 100 surrounded by an upper dome and a lower dome. A base 102 for supporting a wafer 101 is arranged in the chamber 100. Specifically, the wafer 101 is placed on the front side of the base 102, and the ejector pins 103 on the base 102 support the back side of the wafer 101.

[0026] The thin film deposition apparatus includes a plurality of heating units for forming a temperature field in the chamber 100. In this embodiment, a portion of the heating units are disposed on the front side of the susceptor 102, and the remaining heating units are disposed on the back side of the susceptor 102, but the invention is not limited thereto. In other embodiments, the plurality of heating units may be disposed on the same side of the susceptor 102, or some of the heating units may be disposed on the side of the susceptor 102.

[0027] Exemplarily, the multiple heating units include a first heating unit 201, a second heating unit 202, a third heating unit 203 and a fourth heating unit 204 located on the front side of the base 102 and stacked in sequence from bottom to top, and the first heating unit 201, the second heating unit 202, the third heating unit 203 and the fourth heating unit 204 constitute an upper heating module; the multiple heating units also include a fifth heating unit 205, a sixth heating unit 206, a seventh heating unit 207 and an eighth heating unit 208 located on the back side of the base 102 and stacked in sequence from top to bottom, and the fifth heating unit 205, the sixth heating unit 206, the seventh heating unit 207 and the eighth heating unit 208 constitute a lower heating module.

[0028] Figure 2 FIG. 4 is a bottom view of an upper heating module according to an embodiment of the present invention. Figure 3 FIG. 1 is a top view of a lower heating module according to an embodiment of the present invention. Figure 2 and Figure 3 As shown, in the upper heating module, the heating unit located at the top surrounds the periphery of the heating unit located at the bottom, and the first heating unit 201, the second heating unit 202, the third heating unit 203 and the fourth heating unit 204 jointly heat the front side of the wafer 101; in the lower heating module, the heating unit located at the bottom surrounds the periphery of the heating unit located at the top, and the fifth heating unit 205, the sixth heating unit 206, the seventh heating unit 207 and the eighth heating unit 208 jointly heat the back side of the wafer. It should be noted that each heating unit of the upper heating module and the lower heating module will generate energy superposition to the same position of the wafer.

[0029] refer to Figure 2 and Figure 3 As shown, each heating unit includes a plurality of bulbs, and the bulbs of the same heating unit are evenly arranged along a circle with the center of the heating unit as the center; the number of bulbs of the outer heating unit can be greater than the number of bulbs of the inner heating unit. Exemplarily, the thin film deposition device includes but is not limited to 72 bulbs.

[0030] Among them, after the thin film deposition equipment is maintained, after the equipment temperature field hardware is upgraded, and after the temperature field matching between different chambers is required to be performed quickly and efficiently to avoid the influence of different temperature fields on the thickness of the formed thin film layer and improve the consistency of the thin film between wafers.

[0031] Figure 4 A flow chart of a method for matching the room temperature field of a thin film deposition equipment chamber provided by an embodiment of the present invention. Figure 4 As shown, the method for matching the temperature field of the chamber of the thin film deposition equipment includes:

[0032] Step S1, obtaining an original thickness data set of original thin film layers corresponding to a plurality of the heating units in an original state, wherein the original thickness data set includes the original thin film layer thicknesses at a plurality of fixed points on a wafer;

[0033] Step S2, adjusting the power of the plurality of heating units for multiple times, and forming a thin film layer on the surface of the wafer in the chamber after each adjustment, measuring the thickness of each thin film layer at the plurality of fixed points to obtain a test thickness data set, and obtaining a plurality of the test thickness data sets after multiple adjustments;

[0034] Step S3, calculating the thickness difference between corresponding points of the test thickness data set and the original thickness data set to obtain a difference data set, and calculating multiple test thickness data sets with the original thickness data set to obtain multiple difference data sets;

[0035] Step S4, calculating the power change rate of each heating unit when reaching a target thickness condition based on the plurality of difference data sets, the original thickness data set and the target thickness data set, wherein the target thickness data set includes the target thickness of the plurality of fixed points; and

[0036] Step S5, calculating the target power of each heating unit based on the power change rate of each heating unit.

[0037] Specifically, in step S1, the original state of the multiple heating units refers to the state before the power of the heating units is adjusted. The original thickness data set corresponding to the multiple heating units in the original state is known before the power of the heating units is adjusted. In one embodiment, an original thin film layer can be formed on the surface of the wafer in the chamber in the original state of the multiple heating units, and then the thickness of the original thin film layer at multiple fixed points on the wafer is measured to obtain the original thickness data set. In another embodiment, original thin film layers can be formed on the surfaces of multiple wafers of the same size in the original state of the multiple heating units, respectively, and then the thickness of the original thin film layer at multiple fixed points on each wafer is measured, and then the thickness value of the same fixed point is averaged to obtain the original thickness data set.

[0038] Exemplarily, the number of the plurality of fixed points may be 81 points, but is not limited thereto. The plurality of fixed points are evenly distributed on the surface of the wafer. The film thickness at the plurality of fixed points may reflect the profile of the film layer on the wafer. In the present application, when measuring the thickness of the film layer on the wafer, the thickness of the film layer at the plurality of fixed points is measured.

[0039] Step S2 is executed to adjust the power of multiple heating units multiple times. After each adjustment, a thin film layer is formed on the surface of the wafer located in the chamber, and the thickness of the thin film layer at multiple fixed points is measured to obtain a set of test thickness data. After multiple adjustments, multiple sets of the test thickness data are obtained.

[0040] In one embodiment, in one adjustment, only the power parameter of one heating unit can be adjusted while the power parameters of other heating units remain the original power parameters. Different heating units' power parameters are adjusted in different adjustments. This kind of adjustment is relatively simple, and the subsequent calculation process is also relatively simple.

[0041] Exemplarily, referring to Figure 1 As shown, the first adjustment is performed. In the first adjustment, only the power parameter of the first heating unit 201 is adjusted, while the power parameters of the other seven heating units remain unchanged. After the first adjustment, a thin film layer is formed on the surface of the wafer located in the chamber, and the thickness of the thin film layer at multiple fixed points is measured to obtain the first set of test thickness data; the second adjustment is performed. In the second adjustment, only the power parameter of the second heating unit 202 is adjusted, while the power parameters of the other seven heating units remain unchanged. After the second adjustment, a thin film layer is formed on the surface of the wafer located in the chamber, and the thickness of the thin film layer at multiple fixed points is measured to obtain the second set of test thickness data; similar to the methods of the first and second adjustments, the power parameters of the third heating unit 203 to the eighth heating unit 208 are adjusted in sequence, and 8 adjustments are completed, and a total of 8 sets of test thickness data are obtained. Exemplarily, each set of test thickness data includes 81 data, but it is not limited thereto.

[0042] In another embodiment, in the step of adjusting the power of multiple heating units multiple times, in at least some of the adjustments, the power of two or more heating units is adjusted simultaneously. Exemplarily, the number of multiple heating units is 8, and the power of k heating units is adjusted each time, 1 < k < 8. The 8 heating units can be combined, and the power is adjusted according to each combination and the thickness of the thin film layer corresponding to each combination is measured. For example, the number of combinations is In some embodiments, in different adjustments, the number of heating units adjusted can also be different.

[0043] It should be noted that in the step of forming a thin film layer on the surface of the wafer located in the chamber after each adjustment, a marking layer has been formed on the surface of the wafer, and the thin film layer is formed on the marking layer. The materials of the marking layer and the thin film layer are different, so as to facilitate accurately measuring the thickness of the thin film layer. Exemplarily, the marking layer can be a SiGe layer, and the thin film layer can be a silicon thin film layer. The marking layer can be formed in the chamber or can have been formed before entering the chamber.

[0044] In the step of forming a thin film layer on the surface of the wafer located in the chamber after each adjustment, SiH4 As a silicon source gas, a silicon thin film layer is formed on the wafer with a marking layer formed on the surface, and GeH 4 or B 2 H 6 , to prevent the flow field from interfering with the thickness profile of the film layer, and SiH 4 The reaction activity is stronger than DCS (dichlorosilane) and TCS (trichlorosilane), and it is highly sensitive to temperature. 4 As a silicon source gas, the formation of a thin film layer can better reflect the effect of the change in the power of the heating unit on the film thickness.

[0045] Execute step S3, calculate the thickness difference between corresponding points of a test thickness data set and the original thickness data set to obtain a difference data set, and calculate multiple test thickness data sets with the original thickness data set to obtain multiple difference data sets.

[0046] When only one heating unit power parameter is adjusted in one adjustment, one difference data set reflects the contribution of the power change of the corresponding heating unit to the film thickness. When more than two heating units power parameters are adjusted in one adjustment, the corresponding difference data set reflects the contribution of the power parameters of the more than two heating units to the film thickness when they change simultaneously.

[0047] When calculating and obtaining the difference data set, the data of the same fixed point of the test thickness data set and the original thickness data set are subtracted to obtain one data of the difference data set.

[0048] Step S4 is executed to calculate the power change rate of each heating unit when reaching the target thickness condition based on the multiple difference data sets, the original thickness data set and the target thickness data set, wherein the target thickness data set includes the target thickness of multiple fixed points.

[0049] Exemplarily, the thickness of the thin film layer at m fixed points on the wafer is measured each time, that is, the number of multiple fixed points is m, the number of multiple heating units is n, the power of multiple heating units is adjusted n times, and only the power parameter of one heating unit is adjusted in one adjustment while the power parameters of other heating units are kept as the original power parameters, m and n are positive integers greater than 1; the original thickness data group is an m×1 matrix A, the multiple difference data groups are an m×n matrix B, the target thickness data group is an m×1 matrix C, and D is an n×1 matrix including the power change rate of n heating units; wherein, C=A+BD, that is, the matrix D can be calculated according to the formula C=A+BD. wherein, a test thickness data group includes m data, and the m data of a test thickness data group are subtracted from the m data of the original thickness data group one by one to obtain a column of data in the matrix B.

[0050] In this embodiment, the power change rate of each heating unit can be calculated quickly and accurately using algorithms such as Nelder-mead, L-BFGS-B or Powell. In other words, the matrix D including the power change rates of n heating units can be calculated using algorithms such as Nelder-mead, L-BFGS-B or Powell.

[0051] Step S5 is executed to calculate the target power of each heating unit based on the power change rate of each heating unit.

[0052] Specifically, the original power of each heating unit is obtained, and the target power of each heating unit is calculated based on the original power of each heating unit and the power change rate of each heating unit.

[0053] Exemplarily, F is an n×1 matrix including the original powers of n heating units, f i1 is the element in the ith row and first column of the matrix F, E is an n×1 matrix including the target powers of the n heating units, and D is an n×1 matrix including the power change rates of the n heating units, where d i1 is the element of the ith row and the first column in D, H is an n×1 matrix including the power increments of the n heating units, and f i1 *d i1 As the element of the i-th row and the first column in the matrix H, where the matrix F and the matrix D can calculate the matrix H, and the matrix E is further calculated using the formula E=F+H.

[0054] In some embodiments, the power parameters of multiple heating units of the thin film deposition equipment are expressed in the form of power ratios. After the target power of each heating unit is calculated, the target power of each heating unit is converted into a power ratio and input into the machine end.

[0055] In this embodiment, at least some steps of the method for matching the room temperature and field in the chamber of the thin film deposition equipment can be executed by a program programmed in Python. That is to say, the calculation principle of the method for matching the room temperature and field in the chamber of the thin film deposition equipment of the present application can be converted into Python and programmed into a program.

[0056] Exemplarily, before using the program operation, it is necessary to collect multiple difference data groups, the original thickness data group, the target thickness data group and the original powers of multiple heating units, wherein the original powers of multiple heating units can be converted into the form of power percentage. If the original power parameters of multiple heating units have been displayed in the form of power percentage, no conversion is required.

[0057] Figure 5 The operation section of the program provided by one embodiment of the present invention. Figure 5As shown, multiple difference data sets, original thickness data sets, target thickness data sets and original power ratios of multiple heating units can be loaded into the program in the form of an Excel file, and then the solution model is selected to obtain the target power ratios (i.e., New power ratios) of multiple heating units that need to be set on the machine side. Figure 5 The powerratio column is the original power ratio of multiple heating units. In the program interface, you can also see the thickness curve in the lower left corner. The thickness curve includes the original thickness curve based on the original thickness data group (i.e., the BSL line), the target thickness curve based on the target thickness data group (i.e., the target line), and the predicted thickness curve based on the target power ratio of multiple heating units (i.e., the calculation line). It should be noted that the thickness curve in the accompanying drawings of the specification of this application, the horizontal axis is the coordinate position of the measurement point, 0 represents the center point of the wafer, 150 / -150 represents the edge point of the 300mm wafer, and the vertical axis is the dimensionless data after thickness normalization.

[0058] Figure 6 The thickness curves before and after the thin film deposition equipment is upgraded are shown in FIG. 1 , wherein the total number of bulbs in the multiple heating units is reduced and the power of the bulbs is increased after the upgrade compared to before the upgrade. Figure 6 As shown, the matching degree of the thickness curves corresponding to the two temperature fields before and after the upgrade is low, so it is necessary to perform temperature field matching based on the temperature field after the upgrade.

[0059] Furthermore, the method for matching the temperature field in the chamber of the thin film deposition equipment of this embodiment is used to match the temperature field in the chamber of the upgraded thin film deposition equipment, with the goal of matching the thickness curve corresponding to the chamber after the upgrade with the thickness curve corresponding to the chamber before the upgrade, so that the thin film manufactured by the thin film deposition equipment can perform consistently before and after the upgrade.

[0060] Figure 7 This is a program interface diagram for calculating the target power ratio using the program provided by an embodiment of the present invention, wherein: Figure 7 In the figure on the lower left, BSL is the original thickness curve corresponding to the upgrade, Target is the target thickness curve, and calculation is the expected thickness curve corresponding to the calculated target power ratio. Figure 7 As shown, the program provided in this embodiment can be used to calculate the target power ratio corresponding to the multiple heating units after the upgrade (such as Figure 7 The expected thickness curve and the target thickness curve have a high matching degree.

[0061] Figure 8 The thickness curve corresponding to the temperature field of the upgraded thin film deposition equipment is adjusted. Figure 8As shown, after the temperature field matching adjustment of the upgraded equipment, the corresponding actual thickness curve has a high degree of matching with the target thickness curve and the expected thickness curve, which proves that the temperature field of the upgraded thin film deposition equipment chamber room temperature matching method of this embodiment can be adjusted to match the temperature before the upgrade, so that the corresponding film thickness condition of the thin film deposition equipment can be adjusted to match the corresponding film thickness condition before the upgrade.

[0062] When matching the temperature field of the thin film deposition equipment chamber, it is also possible to collect a large amount of data on the power ratio of multiple heating units and the corresponding film thickness, and use machine learning and other algorithm models to realize the prediction function of the relationship between the power ratio of multiple heating units and the film thickness, thereby determining the target power ratio of multiple heating units.

[0063] In the method for matching the room temperature field of a thin film deposition equipment chamber provided by the present invention, firstly, an original thickness data set of an original thin film layer corresponding to the chamber in an original state is obtained, and the original thickness data set includes the thickness of the original thin film layer at multiple fixed points on a wafer; then, the power of multiple heating units is adjusted multiple times, and after each adjustment, a thin film layer is formed on the surface of the wafer located in the chamber and the thickness of the thin film layer at multiple fixed points is measured to obtain a test thickness data set, and multiple test thickness data sets are obtained after multiple adjustments; then, the thickness difference between the corresponding points of a test thickness data set and the original thickness data set is calculated to obtain a difference data set, and multiple test thickness data sets are combined. The thickness data group is respectively calculated with the original thickness data group to obtain multiple difference data groups; then the power change rate of each heating unit when the target thickness condition is reached is calculated based on the multiple difference data groups, the original thickness data group and the target thickness data group; and the target power of each heating unit is calculated based on the power change rate of each heating unit. In this way, the target power of each heating unit can be obtained quickly and accurately, and then the temperature field of the chamber of the thin film deposition equipment can be quickly adjusted to the target state, and the temperature field of the chamber of the thin film deposition equipment can be matched quickly and efficiently, shortening the time for machine inspection, machine re-inspection and recipe transfer of the thin film deposition equipment, which is helpful to improve the consistency between wafers. Compared with manual adjustment or adjustment of the power or power ratio of the heating unit based on experience, the method of the present application is less affected by subjective factors, and the difficulty of achieving the adjustment destination is relatively small.

[0064] The above description is only a description of the preferred embodiment of the present invention, and is not any limitation on the scope of rights of the present invention. Any technical personnel in this field can make possible changes and modifications to the technical solution of the present invention by using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the protection scope of the technical solution of the present invention.

Claims

1. A method for temperature field matching of a thin film deposition equipment chamber, characterized in that: The thin film deposition device comprises a plurality of heating units for forming a temperature field in a chamber; and the method for matching the temperature field in the chamber of the thin film deposition device comprises: Acquire an original thickness data set of original thin film layers corresponding to the plurality of heating units in an original state, wherein the original thickness data set includes the original thin film layer thicknesses at a plurality of fixed points on the wafer; The power of the plurality of heating units is adjusted multiple times, and after each adjustment, a thin film layer is formed on the surface of the wafer in the chamber and the thickness of the thin film layer at the plurality of fixed points is measured to obtain a test thickness data set, and multiple test thickness data sets are obtained after multiple adjustments; Calculating the thickness difference between corresponding points of the test thickness data set and the original thickness data set to obtain a difference data set, and calculating a plurality of the test thickness data sets with the original thickness data set to obtain a plurality of the difference data sets; Calculating the power change rate of each heating unit when achieving a target thickness condition based on the plurality of difference data sets, the original thickness data set, and the target thickness data set, wherein the target thickness data set includes the target thickness of the plurality of fixed points; and The target power of each of the heating units is calculated based on the power change rate of each of the heating units.

2. The method for temperature field matching of a thin film deposition equipment chamber as claimed in claim 1, characterized in that: In the step of calculating the power change rate of each heating unit when the target thickness condition is reached based on multiple difference data groups, the original thickness data group and the target thickness data group, the power change rate of each heating unit is calculated using Nelder-mead, L-BFGS-B or Powell algorithm.

3. The method for temperature field matching of a thin film deposition equipment chamber according to claim 1, characterized in that: In the step of adjusting the power of the plurality of heating units multiple times, only the power parameter of one heating unit is adjusted in one adjustment while the power parameters of the other heating units remain as the original power parameters, and the power parameters of different heating units are adjusted in different adjustments.

4. The method for temperature field matching of a thin film deposition equipment chamber as claimed in claim 3, characterized in that: The number of the multiple fixed points is m, the number of the multiple heating units is n, the power of the multiple heating units is adjusted n times, m and n are positive integers greater than 1; the original thickness data group is an m×1 matrix A, the multiple difference data groups are an m×n matrix B, the target thickness data group is an m×1 matrix C, and D is an n×1 matrix including the power change rates of the n heating units; wherein, C=A+BD.

5. The method for temperature field matching of a thin film deposition equipment chamber according to claim 1, characterized in that: The method for calculating the target power of each heating unit based on the power change rate of each heating unit includes: obtaining the original power of each heating unit, and calculating the target power of each heating unit based on the original power of each heating unit and the power change rate of each heating unit.

6. The method for temperature field matching of a thin film deposition equipment chamber as claimed in claim 5, characterized in that: F is an n×1 matrix including the original powers of n heating units, f i1 is the element of the i-th row in the matrix F, E is an n×1 matrix including the target powers of the n heating units, and D is an n×1 matrix including the power change rates of the n heating units, where d i1 is the element of the i-th row in D, H is an n×1 matrix including the power increments of the n heating units, and f i1 *d i1 As the i-th row element in the matrix H, where E=F+H.

7. The method for temperature field matching of a thin film deposition equipment chamber as claimed in claim 1, characterized in that: At least some steps of the method for matching the room temperature field of a thin film deposition device chamber are executed using a program programmed in Python.

8. The method for temperature field matching of a thin film deposition equipment chamber as claimed in claim 5, characterized in that: The method for matching the temperature field of the chamber of the thin film deposition equipment further includes: converting the target power of each of the heating units into a power proportion and inputting the power proportion into a machine end.

9. The method for temperature field matching of a thin film deposition equipment chamber according to claim 1, characterized in that: In the step of adjusting the powers of the plurality of heating units multiple times, the powers of two or more heating units are adjusted simultaneously in at least some of the adjustments.

10. The method for temperature field matching of a thin film deposition equipment chamber according to claim 1, characterized in that: In the step of forming a thin film layer on the surface of the wafer in the chamber after each adjustment, SiH4 is used as a silicon source gas to form a silicon thin film layer on the wafer with a marking layer formed on the surface, and the marking layer is made of a different material from the silicon thin film layer.

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