Mask, optical module and pattern processing system
By setting a reflective membrane on the mask version, the multi -layer medium layer reflects strong light, solving the problem of short life of the mask version in strong laser processing, and achieves longer service life and higher processing efficiency.
Patent Information
- Application Number
- CN202411609519.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-12
- Publication Date
- 2025-01-28
AI Technical Summary
The conventional mask plate has a short life and is prone to damage in direct processing of strong lasers, resulting in workpiece processing failure and increased cost.
By setting a reflective film on the mask version, the reflective membrane includes at least two medium layers to effectively reflect strong light and extend the service life of the mask version.
A effective reflection of strong light is achieved, the service life of the mask version is extended, so that it can be suitable for strong laser processing equipment.
Smart Images
Figure CN119376177A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of graphic processing technology, and in particular to a mask, an optical module and a graphic processing system. Background Art
[0002] Conventional masks usually use glass or quartz materials as substrates, and sputter a layer of metal chromium, silver, gold and other materials with a thickness of hundreds of nanometers as the light-shielding part. In subsequent photolithography applications, the metal-plated side of the mask faces the workpiece, and the substrate faces the light incident side. The incident light can directly act on the photoresist above the workpiece through the substrate to achieve a photochemical reaction; after passing through the substrate, the incident light irradiates the metal surface area and is blocked by the metal area, thereby protecting the photoresist under the metal area from photochemical reaction, thereby achieving the purpose of photolithography patterning.
[0003] However, when conventional masks are used for high-power laser direct processing, a large spot energy density is required when a high-power laser is used to directly process the workpiece, and pulsed lasers such as ns, ps, fs, etc. are usually used, which have extremely high peak power density, vaporizing the metal layer under the substrate, resulting in a short life of the mask. At the same time, damage to the mask can easily cause workpiece processing failure, resulting in waste of workpieces and increased manufacturing costs. Summary of the invention
[0004] The embodiment of the present invention provides a mask, an optical module and a graphics processing system. By adjusting the reflective layer on the mask, effective reflection of strong light can be ensured, thereby extending the service life of the mask, so that the mask can also be applied to high-power laser processing equipment.
[0005] In a first aspect, an embodiment of the present invention provides a mask, comprising a light-transmitting area and a reflective area, wherein the light-transmitting area surrounds at least a portion of the reflective area;
[0006] substrate;
[0007] A reflective film, located on one side of the substrate, used to block the transmission of strong laser light, and located in the reflective area;
[0008] The reflective film includes at least two dielectric layers, the dielectric layers include a first dielectric layer and a second dielectric layer, the first dielectric layer is located on a side of the second dielectric layer close to the substrate; the refractive index of the first dielectric layer is n1, and the refractive index of the second dielectric layer is n2; wherein |n1-n2|>0.
[0009] Optionally, the mask further includes a transmissive film, the transmissive film is located on one side of the substrate, the transmissive film is used to transmit the strong laser, and at least a portion of the transmissive film is located in the light-transmitting area.
[0010] Optionally, along the thickness direction of the substrate, the transmissive film and the reflective film are located on the same side of the substrate;
[0011] The transmissive films are all located in the light-transmitting area;
[0012] The orthographic projection of the transmissive film onto the substrate does not overlap with the projection of the reflective film onto the substrate.
[0013] Optionally, along the thickness direction of the substrate, the transmission film and the reflection film are located on both sides of the substrate.
[0014] Optionally, the transmissive films are all located in the light-transmitting area; and the orthographic projection of the transmissive film onto the substrate does not overlap with the projection of the reflective film onto the substrate.
[0015] Optionally, the transmissive film comprises a first transmissive sub-section and a second transmissive sub-section connected to each other;
[0016] The first light-transmitting section is located in the reflective area, and the orthographic projection of the first light-transmitting section onto the substrate overlaps with the orthographic projection of the reflective film onto the substrate; the second light-transmitting section is located in the light-transmitting area, and the orthographic projection of the second light-transmitting section onto the substrate does not overlap with the orthographic projection of the reflective film onto the substrate.
[0017] Optionally, the material of the substrate includes at least one of sodium silicate or silicon dioxide.
[0018] Optionally, the material of the first dielectric layer includes at least one of titanium pentoxide, silicon dioxide, aluminum oxide, silicon nitride or calcium fluoride; the material of the second dielectric layer includes at least one of titanium pentoxide, silicon dioxide, aluminum oxide, silicon nitride or calcium fluoride.
[0019] In a second aspect, an embodiment of the present invention provides an optical module, comprising the mask described in any one of the first aspects;
[0020] The light module also includes a light source and a light adjustment module; the strong laser emitted by the light source is transmitted to the mask through the light adjustment module.
[0021] In a third aspect, an embodiment of the present invention provides a graphics processing system, comprising the optical module and a workbench described in the second aspect;
[0022] The light emitted by the light module is transmitted to the workbench, and performs graphic processing on the workpiece to be processed carried by the workbench.
[0023] The embodiment of the present invention provides a mask plate, which includes a substrate and a reflective layer located on one side of the substrate, the reflective layer is used to block the transmission of strong laser, and the reflective film includes at least two dielectric layers with different refractive indices, so as to better ensure the blocking of light. Among them, the mask plate includes a light-transmitting area and a reflective area, and the reflective film is arranged in the reflective area. The light transmitted to the mask plate is reflected and blocked in the reflective area, while the light transmitted to the light-transmitting area of the mask plate can be transmitted to the workpiece on the other side through the mask plate to etch it, thereby realizing a patterned etching process. The present invention can ensure effective reflection of strong light by arranging a reflective film on the mask plate, and the reflective film includes multiple dielectric layers, so as to ensure that the light transmitted to the mask plate is emitted in the light-transmitting area and reflected in the reflective area, that is, the mask pattern can be realized by reflecting the strong light through the reflective film, thereby extending the service life of the mask plate, so that the mask plate can be applied to strong laser processing equipment. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0025] Figure 1 is a structural schematic diagram of a mask provided by an embodiment of the present invention;
[0026] Figure 2 yes Figure 1 A schematic cross-sectional view along the section line A-A';
[0027] Figure 3 is a schematic structural diagram of another mask provided by an embodiment of the present invention;
[0028] Figure 4 yes Figure 3 A schematic cross-sectional view along the section line BB';
[0029] Figure 5 yes Figure 1 Another schematic cross-sectional view along the section line A-A';
[0030] Figure 6 yes Figure 1 Another schematic cross-sectional view along the section line A-A';
[0031] Figure 7 is a structural schematic diagram of an optical module provided by an embodiment of the present invention;
[0032] Figure 8It is a structural schematic diagram of a graphics processing system provided by an embodiment of the present invention. DETAILED DESCRIPTION
[0033] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below in combination with the drawings in the embodiments of the present invention through specific implementation methods. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work fall within the protection scope of the present invention.
[0034] Figure 1 is a schematic structural diagram of a mask provided by an embodiment of the present invention, Figure 2 yes Figure 1 A schematic cross-sectional view along the section line A-A', see Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a mask 10, which includes a light-transmitting area 101 and a reflective area 102, wherein the light-transmitting area 101 surrounds at least a portion of the reflective area 102; a substrate 100; a reflective film 200, which is located on one side of the substrate 100, and is used to block the transmission of a strong laser, and the reflective film 200 is located in the reflective area 102; wherein the reflective film 200 includes at least two dielectric layers 210, and the dielectric layer 210 includes a first dielectric layer 211 and a second dielectric layer 212, and the first dielectric layer 211 is located on a side of the second dielectric layer 212 close to the substrate 100; the refractive index of the first dielectric layer 211 is n1, and the refractive index of the second dielectric layer 212 is n2; wherein, |n1-n2|>0.
[0035] Among them, the mask 10 is a structure for patterning the workpiece, which includes a light-transmitting area 101 and a reflective area 102. The light transmitted to the light-transmitting area 101 of the mask 10 can pass through the mask 10, and then etch the workpiece on the side where the mask 10 emits light; while the light transmitted to the reflective area 102 of the mask 10 cannot pass through the mask 10, so this part of the light cannot be transmitted to the workpiece on the side where the mask 10 emits light. The patterned etching of the workpiece is achieved by adjusting the shapes of the light-transmitting area 101 and the reflective area 102 of the mask 10. That is, the arrangement of the light-transmitting area 101 and the reflective area 102 in the mask 10 is diverse. Figure 1 Only one arrangement of the array is shown. The specific arrangement of the light-transmitting area 101 and the reflective area 102 can be adaptively adjusted according to actual conditions, and the embodiment of the present invention does not specifically limit this.
[0036] Specifically, refer to Figure 1 and Figure 2As shown, the mask 10 includes a substrate 100 and a reflective film 200 located on one side of the substrate 100. The reflective film 200 on the mask 200 can reflect the light transmitted to the reflective film 200, thereby blocking the transmission of the light, that is, the reflective layer 200 is located in the reflective area 102. Further, the reflective layer 200 of the mask 10 can block strong lasers, that is, it can block light with strong energy. When the mask 10 is used to perform patterned etching on a workpiece, the strong laser can pass through the light-transmitting area 101, thereby ensuring the high efficiency of etching the workpiece. In addition, the reflective layer 200 can directly reflect and block the strong laser, and further protect the structural stability of the mask 10, thereby extending the service life of the mask 10.
[0037] For further reference, Figure 1 and Figure 2 As shown, the reflective film 200 includes at least two dielectric layers 210. Figure 2 In the example, two dielectric layers 210 are used for illustration. Based on the specific number of dielectric layers 210, the number of dielectric layers 210 can be adjusted adaptively according to the actual situation. The embodiment of the present invention does not specifically limit this. Figure 1 and Figure 2 As shown, the dielectric layer 210 includes a first dielectric layer 211 and a second dielectric layer 212, and the first dielectric layer 211 is located on a side of the second dielectric layer 212 close to the substrate 100, and the first dielectric layer 211 and the second dielectric layer 212 have different refractive indices, so that the light transmitted to the reflective layer 200 is refracted or reflected and does not continue to be transmitted to the substrate 100. For example, Figure 2 As shown, when the reflective layer 200 includes only two dielectric layers 210, namely a first dielectric layer 211 and a second dielectric layer 212, the refractive index n1 of the first dielectric layer 211 can be adjusted to be smaller than the refractive index n2 of the second dielectric layer 212. In this way, the light transmitted to the second dielectric layer 212 is totally reflected when transmitted to the first dielectric layer 211, and thus will not be transmitted to the substrate 100. On the one hand, the light can be blocked, and on the other hand, the substrate 100 can be protected to prevent the substrate 100 from being irradiated by strong laser in the reflective area 102, thereby ensuring the structural stability of the substrate 100 and ensuring the service life of the mask 10.
[0038] Optionally, the reflective layer may also include more dielectric layers, for example, three dielectric layers. Among the three dielectric layers, there may be two dielectric layers whose refractive index is closer to the substrate side than the refractive index of the dielectric layer farther from the substrate side, thereby ensuring that the light transmitted to the dielectric layer can be totally reflected. The refractive index of the other dielectric layer can be further adjusted, that is, the refractive indexes of the three dielectric layers are different. Multiple dielectric layers with different refractive indices can realize multiple adjustments of the optical path, thereby reducing the energy of the light. On the one hand, it can better prevent the light from being transmitted to the substrate and realize the light reflection effect in the reflection area. At the same time, it can also better protect the substrate.
[0039] Furthermore, the preparation process of the mask 10 may be as follows:
[0040] First, polish, clean and dry the substrate of appropriate thickness; second, sputter and deposit multiple layers of dielectric layers with different refractive indices on any surface, for example, deposit tantalum pentoxide with a thickness of 61.97nm and silicon dioxide with a thickness of 92.83nm as a laminated structure, repeat the laminated structure multiple times, for example, repeat 15 times, and you can get a reflective layer with an overall thickness of about 2.4um. Optionally, the deposition temperature can be 50-150℃. Further, the high-reflective dielectric film is patterned through coating, exposure, etching and other processes, that is, the dielectric film is removed where light is required to be transmitted, that is, the removed part is the light-transmitting area of the mask, and the unremoved part is the reflective area of the mask.
[0041] Furthermore, if the substrate 100 is made of a transparent material, the area without the reflective film 200 can be understood as the light-transmitting area 101, and the light transmitted to the light-transmitting area 101 is directly transmitted through the light-transmitting area 101 to the workpiece on the light-emitting side of the mask 10 for etching. Furthermore, a transmissive film can be provided at the light-transmitting area 101 of the substrate 100, and the light is transmitted to the workpiece through the transmissive film and the substrate in sequence, or through the substrate and the transmissive film in sequence, based on which the flexibility of the setting of the mask 10 can be reflected.
[0042] In summary, the mask provided by the embodiment of the present invention includes a light-transmitting area and a reflective area, and the reflective film is arranged in the reflective area. The light transmitted to the mask is reflected and blocked in the reflective area, while the light transmitted to the light-transmitting area of the mask can be transmitted to the workpiece on the other side through the mask to etch it, thereby realizing a patterned etching process. The present invention can ensure effective reflection of strong light by arranging a reflective film on the mask, and the reflective film includes multiple dielectric layers, so as to ensure that the light transmitted to the mask is emitted in the light-transmitting area and reflected in the reflective area, that is, the mask pattern can be realized by reflecting the strong light through the reflective film, thereby extending the service life of the mask, so that the mask can be applied to high-intensity laser processing equipment.
[0043] Figure 3is a schematic structural diagram of another mask provided by an embodiment of the present invention, Figure 4 yes Figure 3 A schematic cross-sectional view along the section line B-B', Figure 5 yes Figure 1 Another cross-sectional schematic diagram along the section line A-A', Figure 6 yes Figure 1 Another cross-sectional diagram along the section line A-A', see Figure 1 , Figures 3 to 6 As shown, the mask 10 further includes a transmissive film 300 , which is located on one side of the substrate 100 . The transmissive film 300 is used to transmit strong laser light, and at least a portion of the transmissive film 300 is located in the light-transmitting area 101 .
[0044] For further reference, Figures 3 to 6 As shown, the mask 10 also includes a transmissive film 300, which will not block the transmission of light, and the light transmitted to the transmissive film 300 can continue to be transmitted. That is, at least part of the transmissive film 300 is arranged in the light-transmitting area 101 to ensure that part of the area of the mask 10 can transmit light. Among them, the transmissive film 300 can be understood as an anti-reflection film, which is composed of a material with a refractive index between glass and air. The anti-reflection film can reduce the loss caused by light reflection. Exemplary materials used for anti-reflection films include magnesium fluoride, titanium oxide, lead sulfide, lead selenide, ceramic infrared light infrared anti-reflection film, vinyl silsesquioxane hybrid film, etc. The specific material of the transmissive film 300 provided in the embodiment of the present invention is not specifically limited in the embodiment of the present invention, and can be adaptively adjusted according to actual needs.
[0045] The transparent film 300 is also located on one side of the substrate 100 and can be Figure 4 As shown, the transmissive film 300 and the reflective film 200 are located on the same side of the substrate 100. Figure 5 and Figure 6 As shown, the transmissive film 300 and the reflective film 200 are located on both sides of the substrate 100 , which reflects that the mask 10 provided by the embodiment of the present invention can be arranged in a variety of ways and has universal applicability.
[0046] Continue to refer Figure 3 and Figure 4 As shown, along the thickness direction of the substrate 100 , the transmissive film 300 and the reflective film 200 are located on the same side of the substrate 100 ; the transmissive films 300 are all located in the light-transmitting area 101 ; the orthographic projection of the transmissive film 300 onto the substrate 100 does not overlap with the projection of the reflective film 200 onto the substrate 100 .
[0047] Specifically, refer to Figure 3 and Figure 4As shown, along the thickness direction of the substrate 100, the transmissive film 300 and the reflective film 200 are located on the same side of the substrate 100, that is, when preparing the mask 10, the transmissive film 300 and the reflective film 200 are both deposited on one side of the substrate 100. The area where the transmissive film 300 is located corresponds to the light-transmitting area 101 of the mask 10, and the area where the reflective film 200 is located corresponds to the reflective area 102 of the mask 10. Furthermore, locating the transmissive film 300 and the reflective film 200 on the same side of the substrate 100 is conducive to realizing a thin design of the mask 10, and can ensure that the overall structure of the mask 10 has flatness.
[0048] In the process of preparing the mask 10, after the preparation of the reflective layer on one side of the substrate is completed, a film layer is deposited on the side of the substrate where the reflective layer is provided, that is, a transmissive film is prepared, and the transmissive film is deposited in the area where the reflective layer is not provided.
[0049] Continue to refer Figure 1 , Figure 5 and Figure 6 As shown, along the thickness direction of the substrate 100 , the transmission film 300 and the reflection film 200 are located on both sides of the substrate 100 .
[0050] Specifically, refer to Figure 3 and Figure 4 As shown, along the thickness direction of the substrate 100, the transmissive film 300 and the reflective film 200 are located on both sides of the substrate 100, that is, when preparing the mask 10, the transmissive film 300 and the reflective film 200 are respectively deposited on one side of the substrate 100. The transmissive film 300 and the reflective film 200 are located on both sides of the substrate 100, so that interference and influence on the reflective film 200 that has been prepared can be avoided when preparing the transmissive film 300. Therefore, the transmissive film 300 and the reflective film 200 are arranged on both sides of the substrate 100, which, on the one hand, reflects the flexibility of the setting of the mask 10, and on the other hand, can avoid the influence of the transmissive film 300 on the reflective film 200 when preparing, thereby ensuring the structural stability of the mask 10.
[0051] In the process of preparing the mask 10, after the reflective layer on one side of the substrate is prepared, a layer of transmissive film is sputter-deposited on the entire surface of the other side of the substrate. Furthermore, the deposited transmissive film can also be patterned as required.
[0052] Continue to refer Figure 1 and Figure 5 As shown, the transmissive films 300 are all located in the light-transmitting area 101 ; the orthographic projection of the transmissive film 300 onto the substrate 100 does not overlap with the projection of the reflective film 200 onto the substrate 100 .
[0053] Specifically, along the thickness direction of the substrate 100, when the transmissive film 300 and the reflective film 200 are located on both sides of the substrate 100, Figure 1 and Figure 5 As shown, the orthographic projection of the transmissive film 300 onto the substrate 100 does not overlap with the projection of the reflective film 200 onto the substrate 100. That is, the transmissive film 300 deposited on the other side of the substrate 100 and the reflective layer 200 are also patterned during the preparation process. Figure 5 As shown, the transmissive film 300 is retained in the light-transmitting area 101 , and the transmissive film 300 is removed in the reflective area 102 , which can reduce the overall mass of the mask 10 and is conducive to realizing a lightweight design of the mask 10 .
[0054] Continue to refer Figure 1 and Figure 6 As shown, the transmissive film 300 includes a first transmissive section 310 and a second transmissive section 320 that are connected to each other; the first light-transmitting section 310 is located in the reflective area 102, and the orthographic projection of the first light-transmitting section 310 onto the substrate 100 overlaps with the orthographic projection of the reflective film 200 onto the substrate 100; the second light-transmitting section 320 is located in the light-transmitting area 101, and the orthographic projection of the second light-transmitting section 320 onto the substrate 100 does not overlap with the orthographic projection of the reflective film 200 onto the substrate 100.
[0055] Specifically, along the thickness direction of the substrate 100, when the transmissive film 300 and the reflective film 200 are located on both sides of the substrate 100, Figure 1 and Figure 6 As shown, the projection of the transmissive film 300 onto the substrate 100 does not overlap with the projection of the reflective film 200 onto the substrate 100. That is, the transmissive film 300 deposited on the other side of the substrate 100 is not patterned, and the transmissive film 300 is a whole-surface film structure. Figure 6 As shown, the transmissive film 300 includes a first transmissive section 310 and a second transmissive section 320 that are connected to each other, wherein the orthographic projection of the first transmissive section 310 onto the substrate 100 overlaps with the orthographic projection of the reflective film 200 onto the substrate 100, that is, the first transmissive section 310 and the reflective film 200 are located exactly on opposite sides of the substrate 100, and the light at this place will not continue to be transmitted, which is the reflective area 102; the second transmissive section 320 is located in the transmissive area 101, and the orthographic projection of the second transmissive section 320 onto the substrate 100 does not overlap with the orthographic projection of the reflective film 200 onto the substrate 100, that is, the second transmissive section 320 is used to continue to transmit the light, thereby ensuring the light transmission performance of the mask 10 in the transmissive area 101.
[0056] Furthermore, the transmissive film 300 includes a first transmissive sub-portion 310 and a second transmissive sub-portion 320 connected to each other, which means that when preparing the transmissive film 300, no further patterning operation is performed on the transmissive film 300, thereby reducing the process preparation cost of the mask 10. At the same time, the entire transmissive film 300 can also improve the overall flatness of the mask 10, that is, ensure the regularity of the overall structure of the mask 10.
[0057] Continue to refer Figures 1 to 6 As shown, the material of the substrate 100 includes at least one of sodium silicate and silicon dioxide.
[0058] Specifically, refer to Figures 1 to 6 As shown, the material of the substrate 100 can be sodium silicate or silicon dioxide. When the substrate 100 is sodium silicate, it can be understood that the substrate 100 is made of ordinary glass. When the substrate 100 is silicon dioxide, it can be understood that the substrate 100 is made of quartz glass. In general, the substrate 100 is light-transmissive. The specific material of the substrate 100 can be adaptively adjusted according to the requirements of the mask 10.
[0059] Exemplarily, the thickness of the substrate 100 may be between 0.1 mm and 20 mm, which can ensure the light transmittance of the substrate 100 while also ensuring the hardness of the substrate 100 , that is, ensuring the structural stability of the mask 10 .
[0060] Continue to refer Figures 1 to 6 As shown, the material of the first dielectric layer 211 includes at least one of titanium pentoxide, silicon dioxide, aluminum oxide, silicon nitride or calcium fluoride; the material of the second dielectric layer 212 includes at least one of titanium pentoxide, silicon dioxide, aluminum oxide, silicon nitride or calcium fluoride.
[0061] Furthermore, the material of the dielectric layer 210 included in the reflective layer 200 is also diverse, wherein the material of the first dielectric layer 211 includes at least one of titanium pentoxide, silicon dioxide, aluminum oxide, silicon nitride or calcium fluoride; the material of the second dielectric layer 212 includes at least one of titanium pentoxide, silicon dioxide, aluminum oxide, silicon nitride or calcium fluoride. While ensuring that the refractive indices of the first dielectric layer 211 and the second dielectric layer 212 are different, the material types of the first dielectric layer 211 and the second dielectric layer 212 can be adaptively adjusted.
[0062] Based on the same inventive concept, an embodiment of the present invention further provides an optical module, Figure 7 is a schematic diagram of the structure of an optical module provided by an embodiment of the present invention, with reference to Figure 7 As shown, the optical module 1 further includes a light source 20 and a light adjustment module 30; the strong laser emitted by the light source 20 is transmitted to the mask 10 through the light adjustment module 30. The optical module 1 includes the mask 10 described in any of the above embodiments, so the optical module 1 provided in the embodiment of the present invention has the corresponding beneficial effects in the above embodiments, which will not be repeated here.
[0063] Based on the same inventive concept, an embodiment of the present invention further provides an optical module, Figure 8 is a schematic diagram of a graphics processing system provided by an embodiment of the present invention, with reference to Figure 8As shown, the graphic processing system 2 also includes an optical module 1 and a workbench 3. The light emitted by the light module 1 is transmitted to the workbench 3, and the workpiece 4 to be processed carried by the workbench 3 is graphic processed. The graphic processing system 2 includes the optical module 1 described in the above embodiment, and the optical module 1 includes the mask 10 described in any of the above embodiments. Therefore, the graphic processing system 2 provided in the embodiment of the present invention has the corresponding beneficial effects in the above embodiments, which will not be repeated here.
[0064] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims
1. A mask, characterized in that: It comprises a light-transmitting area and a reflective area, wherein the light-transmitting area surrounds at least a portion of the reflective area; substrate; A reflective film, located on one side of the substrate, used to block the transmission of strong laser light, and located in the reflective area; The reflective film includes at least two dielectric layers, the dielectric layers include a first dielectric layer and a second dielectric layer, the first dielectric layer is located on a side of the second dielectric layer close to the substrate; the refractive index of the first dielectric layer is n1, and the refractive index of the second dielectric layer is n2; wherein |n1-n2|>0.
2. The mask according to claim 1, characterized in that: The mask plate further comprises a transmission film, the transmission film is located at one side of the substrate, the transmission film is used to transmit the strong laser, and at least a part of the transmission film is located in the light-transmitting area.
3. The mask according to claim 2, characterized in that: Along the thickness direction of the substrate, the transmissive film and the reflective film are located on the same side of the substrate; The transmissive films are all located in the light-transmitting area; The orthographic projection of the transmissive film onto the substrate does not overlap with the projection of the reflective film onto the substrate.
4. The mask according to claim 2, characterized in that: Along the thickness direction of the substrate, the transmission film and the reflection film are located on both sides of the substrate.
5. The mask according to claim 4, characterized in that: The transmissive films are all located in the light-transmitting area; the orthographic projection of the transmissive films onto the substrate does not overlap with the projection of the reflective films onto the substrate.
6. The mask according to claim 4, characterized in that: The transmissive film comprises a first transmissive sub-section and a second transmissive sub-section connected to each other; The first light-transmitting section is located in the reflective area, and the orthographic projection of the first light-transmitting section onto the substrate overlaps with the orthographic projection of the reflective film onto the substrate; the second light-transmitting section is located in the light-transmitting area, and the orthographic projection of the second light-transmitting section onto the substrate does not overlap with the orthographic projection of the reflective film onto the substrate.
7. The mask according to claim 1, characterized in that: The material of the substrate includes at least one of sodium silicate and silicon dioxide.
8. The mask according to claim 1, characterized in that: The material of the first dielectric layer includes at least one of titanium pentoxide, silicon dioxide, aluminum oxide, silicon nitride or calcium fluoride; the material of the second dielectric layer includes at least one of titanium pentoxide, silicon dioxide, aluminum oxide, silicon nitride or calcium fluoride.
9. An optical module, characterized in that: A mask comprising any one of claims 1 to 8; The light module also includes a light source and a light adjustment module; the strong laser emitted by the light source is transmitted to the mask through the light adjustment module.
10. A graphics processing system, characterized in that: Comprising the optical module and the workbench as claimed in claim 9; The light emitted by the light module is transmitted to the workbench, and performs graphic processing on the workpiece to be processed carried by the workbench.