Construction method and system of development prediction model, equipment and storage medium

Abstract

A method and system for constructing a development prediction model, a device and a storage medium, the method comprising: providing a design layout, the design layout comprising a main graph and auxiliary graphs arranged around the main graph; obtaining an optimal exposure condition parameter group; obtaining actual development data of the auxiliary graph; and on the basis of the optimal exposure condition parameter group and actual development data, taking an image plane developed by the auxiliary graph as a simulation image plane, and constructing a development prediction model. The embodiment of the invention improves the accuracy of the development prediction model.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to a method and system, device and storage medium for constructing a development prediction model. Background Art

[0002] Adding tiny sub-resolution auxiliary patterns (SRAF) on the mask using the Optical Proximity Correction (OPC) technology can effectively compensate for imaging errors, increase the operating window, and significantly improve the quality of pattern development on the wafer. Especially for two-dimensional (2D) patterns, sub-resolution auxiliary patterns are an important step to ensure the process window. How to balance the process window of the main pattern and the development risk of sub-resolution auxiliary patterns has always been an important research topic in optical proximity correction: if the size of the sub-resolution auxiliary pattern is small, the improvement of the process window is not obvious. If the size of the sub-resolution auxiliary pattern is large or the arrangement is dense, the risk of sub-resolution auxiliary pattern development is also greater, and as the process is transferred to the back layer, the chip yield will decrease.

[0003] In order to reduce the risk of sub-resolution auxiliary graphics development, it is usually necessary to add a judgment standard for sub-resolution auxiliary graphics development during the optical proximity correction process, which is called a sub-resolution auxiliary graphics development prediction (SRAFPrint Avoiding, SPA) model. The conventional process of establishing a sub-resolution auxiliary graphics development prediction model is usually to compare the collected sub-resolution auxiliary graphics development data with the critical light intensity calculated by the optical proximity correction model after determining the optical proximity correction model, screen out the development light intensity threshold of the sub-resolution auxiliary graphics, establish a sub-resolution auxiliary graphics development prediction model based on this light intensity, simulate the exposure pattern of the sub-resolution auxiliary graphics through the model, and calculate its CD (Critical Dimension) value, so as to judge whether the sub-resolution auxiliary graphics will be developed.

[0004] However, the current SPA model has problems such as long model establishment cycle and low model accuracy. Summary of the invention

[0005] The problem solved by the embodiments of the present invention is to provide a method and system, a device and a storage medium for constructing a development prediction model, so as to improve the accuracy of the development prediction model.

[0006] To solve the above problems, an embodiment of the present invention provides a method for constructing a development prediction model, comprising: providing a design layout, wherein the design layout includes a main graphic and an auxiliary graphic arranged around the main graphic; obtaining an optimal exposure condition parameter group; obtaining actual development data of the auxiliary graphic; based on the optimal exposure condition parameter group and the actual development data, and using the image plane of the auxiliary graphic development as the simulation image plane, constructing a development prediction model.

[0007] Correspondingly, an embodiment of the present invention also provides a system for constructing a development prediction model, including: a layout providing unit, used to provide a design layout, the design layout including a main graphic and an auxiliary graphic arranged around the main graphic; an exposure parameter acquisition unit, used to obtain an optimal exposure condition parameter group; a data acquisition unit, used to obtain actual development data of the auxiliary graphic; a model adjustment unit, used to construct a development prediction model based on the optimal exposure condition parameter group and the actual development data, and using the image plane of the auxiliary graphic development as a simulation image plane.

[0008] Correspondingly, an embodiment of the present invention also provides a device, comprising at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the method for constructing a development prediction model provided by an embodiment of the present invention.

[0009] Correspondingly, an embodiment of the present invention further provides a storage medium, wherein the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the method for constructing a development prediction model provided by an embodiment of the present invention.

[0010] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0011] The method for constructing a development prediction model provided in an embodiment of the present invention, after obtaining an optimal exposure condition parameter group and actual development data of an auxiliary graphic, constructs a development prediction model based on the optimal exposure condition parameter group and the actual development data, and uses the image plane of the auxiliary graphic development as a simulated image plane. Therefore, it is not necessary to construct a development prediction model based on the optical proximity effect correction model after constructing the optical proximity effect correction model, and accordingly, it is free from the dependence on the construction cycle of the optical proximity effect correction model, which is conducive to shortening the construction cycle of the development prediction model. Moreover, the optical proximity effect correction model usually uses the image plane of the main graphic development as the simulated image plane, and the position of the image plane of the auxiliary graphic development is different from that of the main graphic development. The embodiment of the present invention does not construct a development prediction model based on the optical proximity effect correction model, but constructs a development prediction model with the image plane of the auxiliary graphic development as the simulated image plane, which is conducive to improving the accuracy of the development prediction model for the auxiliary graphic development prediction.

[0012] In the system for constructing a development prediction model provided by an embodiment of the present invention, after an exposure parameter acquisition unit obtains an optimal exposure condition parameter group and a data acquisition unit obtains actual development data of an auxiliary graphic, a model adjustment unit constructs a development prediction model based on the optimal exposure condition parameter group and the actual development data, and takes the image plane of the auxiliary graphic development as a simulated image plane. Thus, it is not necessary to construct a development prediction model based on the optical proximity effect correction model after constructing the optical proximity effect correction model, and accordingly, it is free from dependence on the construction cycle of the optical proximity effect correction model, which is beneficial to shortening the construction cycle of the development prediction model. Moreover, the optical proximity effect correction model usually takes the image plane of the main graphic development as the simulated image plane, and the position of the image plane of the auxiliary graphic development is different from that of the main graphic development. In the embodiment of the present invention, the development prediction model is not constructed based on the optical proximity effect correction model, but is constructed with the image plane of the auxiliary graphic development as the simulated image plane, which is beneficial to improving the accuracy of the development prediction model for the auxiliary graphic development prediction. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a flow chart of a method for constructing a development prediction model;

[0014] Figure 2 It is a flow chart of an embodiment of a method for constructing a development prediction model of the present invention;

[0015] Figure 3 Shows the design version Figure 1 A partial schematic diagram of an embodiment;

[0016] Figure 4 is a schematic diagram of an embodiment of preprocessing the design layout;

[0017] Figure 5 Shows Figure 2 A schematic diagram of a flow chart of an embodiment of step S5;

[0018] Figure 6 yes Figure 2 A schematic diagram of a flow chart of an embodiment of step S4 in FIG.

[0019] Figure 7 is a functional block diagram of an embodiment of a system for constructing a development prediction model of the present invention;

[0020] Figure 8 It is a hardware structure diagram of an embodiment of the device provided by the present invention. DETAILED DESCRIPTION

[0021] As can be seen from the background technology, the current SPA model has the problems of long model establishment cycle and low model accuracy. Now, combined with a method for constructing a development prediction model of auxiliary graphics, the reasons why the current SPA model has the problems of long model establishment cycle and low model accuracy are analyzed.

[0022] Figure 1 The invention is a flowchart of a method for constructing a development prediction model of an auxiliary graphic.

[0023] Step S10: providing a design layout, wherein the design layout includes a main graphic and auxiliary graphics arranged around the main graphic.

[0024] Step S20: Obtaining an optimal exposure condition parameter group.

[0025] Step S30: constructing an optical proximity effect correction model based on the optimal exposure condition parameter group;

[0026] Step S40: using an optical proximity effect correction model to calculate a critical light intensity for auxiliary pattern development;

[0027] Step S50: collecting critical development data of the auxiliary pattern;

[0028] Step S60: determining a development light intensity threshold based on the critical development data and the critical light intensity;

[0029] Step S70: constructing an auxiliary pattern development prediction model based on the development light intensity threshold and the optical proximity effect correction model.

[0030] In the above-mentioned method for constructing the development prediction model, the optical proximity effect correction model is used to calculate the critical light intensity of the auxiliary graphic development, and then the development light intensity threshold is determined based on the critical development data and the critical light intensity, so as to construct the auxiliary graphic development prediction model based on the development light intensity threshold and the optical proximity effect correction model. Therefore, the construction of the auxiliary graphic development prediction model is extremely dependent on the establishment cycle of the optical proximity effect correction model, which results in a longer establishment cycle of the auxiliary graphic development prediction model.

[0031] Moreover, in the semiconductor field, an optical proximity correction model is usually established based on the key size data of the main graphic. However, due to the large size difference between the main graphic and the auxiliary graphic, the exposure behavior of the auxiliary graphic needs to be predicted by extrapolation, resulting in low prediction accuracy of the development prediction model. In addition, the imaging positions of the main graphic and the auxiliary graphic are different: along the vertical direction, the image plane position of the main graphic development is usually located in the middle of the photoresist, and the image plane position of the auxiliary graphic development is usually located at the top of the photoresist. The optical proximity correction model is usually constructed based on the image plane position of the main graphic development. Accordingly, in the step of constructing the development prediction model based on the development light intensity threshold and the optical proximity correction model, the development prediction model is also constructed based on the image plane position of the main graphic development, which further leads to the low accuracy of the development prediction model in judging the development of the auxiliary graphic.

[0032] In order to solve the technical problem, an embodiment of the present invention provides a method for constructing a development prediction model. Figure 2 It is a flow chart of an embodiment of a method for constructing a development prediction model of the present invention.

[0033] like Figure 2 As shown, in this embodiment, the method for constructing the development prediction model includes the following basic steps:

[0034] Step S1: providing a design layout, wherein the design layout includes a main graphic and auxiliary graphics arranged around the main graphic;

[0035] Step S2: obtaining an optimal exposure condition parameter group;

[0036] Step S3: obtaining actual development data of the auxiliary pattern;

[0037] Step S4: constructing a development prediction model based on the optimal exposure condition parameter group and actual development data, and taking the image plane of the auxiliary pattern development as the simulation image plane.

[0038] The method for constructing a development prediction model provided in an embodiment of the present invention, after obtaining an optimal exposure condition parameter group and actual development data of an auxiliary graphic, constructs a development prediction model based on the optimal exposure condition parameter group and the actual development data, and uses the image plane of the auxiliary graphic development as a simulated image plane. Therefore, it is not necessary to construct a development prediction model based on the optical proximity effect correction model after constructing the optical proximity effect correction model, and accordingly, it is free from the dependence on the construction cycle of the optical proximity effect correction model, which is conducive to shortening the construction cycle of the development prediction model. Moreover, the optical proximity effect correction model usually uses the image plane of the main graphic development as the simulated image plane, and the position of the image plane of the auxiliary graphic development is different from that of the main graphic development. The embodiment of the present invention does not construct a development prediction model based on the optical proximity effect correction model, but constructs a development prediction model with the image plane of the auxiliary graphic development as the simulated image plane, which is conducive to improving the accuracy of the development prediction model for the auxiliary graphic development prediction.

[0039] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0040] refer to Figure 2 , combined with reference Figure 3 , Figure 3 Shows the design version Figure 1 A partial schematic diagram of an embodiment, step S1: providing a design layout, wherein the design layout includes a main graphic 10 and auxiliary graphics 20 arranged around the main graphic 10.

[0041] The design layout is provided so as to subsequently obtain the optimal exposure condition parameter group corresponding to the design layout and obtain the actual development data of the auxiliary pattern 20 .

[0042] The design layout includes a main graphic 10 and an auxiliary graphic 20 arranged around the main graphic 10 .

[0043] The main pattern 10 is a pattern that needs to be transferred to the photoresist to form a target pattern on the substrate; the auxiliary pattern 20 is used to improve light intensity contrast, reduce edge placement error, and increase focal depth to improve the photolithography process window.

[0044] As an example, the auxiliary pattern 20 includes a sub-resolution auxiliary pattern (Sub-Resolution Assist Features, SRAF) or a scattering bar (Scattering Bar, SB). The diffraction of the sub-resolution auxiliary pattern / scattering bar interacts with the diffraction of the main pattern 10 to achieve the effect of enhancing the lithography process window, thereby improving the lithography quality of the main pattern 10.

[0045] refer to Figure 2 Step S2: Obtaining an optimal exposure condition parameter group. Obtaining the optimal exposure condition parameter group allows the subsequent construction of a development prediction model based on the optimal exposure condition parameter group and actual development data, and using the image plane of the auxiliary pattern 20 as a simulation image plane.

[0046] In this embodiment, the optimal exposure condition parameter group refers to that after the exposure process and the development process are performed using the optimal exposure condition parameter group, the critical size of the pattern formed on the photoresist meets the process requirements. Specifically, the optimal exposure condition parameter group includes the focus depth, the range allowed by the exposure amount, the optimal focal length, and the optimal exposure energy.

[0047] In a specific implementation, the step of obtaining the optimal exposure condition parameter group includes: collecting exposure-energy matrix (Focus-Energy Matrix, FEM) data of the wafer; and determining the optimal exposure condition group based on the exposure-energy matrix data.

[0048] Specifically, the exposure-energy matrix is ​​a test method used to check the lithography process window and determine the optimal exposure conditions. By using different exposure focal lengths and energies in different areas on the wafer, different combinations of process conditions can be generated, so that experiments can be conducted on the wafer to determine the focus depth, the allowable range of exposure, the optimal focal length, and the optimal exposure energy, and then determine the optimal exposure condition parameter group corresponding to the design layout.

[0049] refer to Figure 2 , step S3: obtaining actual development data of the auxiliary pattern 20.

[0050] The actual development data of the auxiliary pattern 20 is obtained so as to subsequently construct a development prediction model based on the optimal exposure condition parameter group and the actual development data, and using the image plane of the development of the auxiliary pattern 20 as the simulation image plane.

[0051] Specifically, the actual development data of the auxiliary pattern 20 is used as a reference benchmark for the simulation development result in the subsequent process of constructing the development prediction model, so as to adjust the development prediction model based on the comparison result between the simulation development result and the actual development data.

[0052] In a specific implementation, based on the design layout, an exposure and development process is performed to obtain an actual development result of the auxiliary pattern 20 on the photoresist as actual development data.

[0053] In this embodiment, after providing the design layout and before constructing the development prediction model based on the optimal exposure condition parameter group and the actual development data and taking the image plane developed by the auxiliary pattern 20 as the simulation image plane, the method for constructing the development prediction model further includes:

[0054] refer to Figure 2 , and combined with reference Figure 4 , Figure 4 It is a schematic diagram of an embodiment of preprocessing the design layout, step S5: preprocessing the design layout to set a measurement line 40 between adjacent main graphics 10, the measurement line 40 passes through the auxiliary graphics 20 between adjacent main graphics 10 and has a gap between the main graphics 10.

[0055] The cutline 40 is used to capture the simulation development result of the auxiliary pattern 20 later.

[0056] In the semiconductor field, in the step of constructing a development prediction model using a traditional method, a shorter measurement line is usually set on the auxiliary pattern, and the measurement line is used as a reference to capture the simulation development result on the measurement line. However, when the design layout is simulated for exposure and development using the development prediction model, the simulation development pattern of the auxiliary pattern is usually not completely overlapped with the auxiliary pattern, and there is usually an offset between the simulation development pattern of the auxiliary pattern and the auxiliary pattern, that is, there is usually an offset between the simulation development pattern of the auxiliary pattern and the measurement line. If the measurement line is not processed, it is easy to fail to capture the correct simulation development result when capturing the simulation development result, thereby causing the obtained simulation development result to be distorted.

[0057] In this embodiment, a measuring line 40 is provided between adjacent main graphics 10, and the measuring line 40 passes through the auxiliary graphics 20 between adjacent main graphics 10, thereby increasing the length of the measuring line 40 and expanding the measuring range of the measuring line 40. In the subsequent process of constructing a development prediction model, in the step of capturing the simulation development result of the auxiliary graphics 20 with the measuring line 40 as the measurement reference, the capturing range can be expanded, thereby improving the accuracy of the simulation development result, which is conducive to avoiding the distortion of the simulation development result as much as possible.

[0058] Moreover, there is a gap between the measuring line 40 and the main pattern 10, so as to prevent the development result of the main pattern 10 from being mistakenly captured during the process of capturing the simulation development result of the auxiliary pattern 20, thereby improving the accuracy of the simulation result.

[0059] Combined with reference Figure 4 and Figure 5 , Figure 5 Shows Figure 2 FIG. 1 is a flow chart of an embodiment of step S5 in FIG. 1 .

[0060] As an example, step S5 of preprocessing the design layout includes: setting a reference graphic 30 between adjacent main graphics 10; based on the relative position of the reference graphic 30 and the main graphic 10, setting the measurement line 40, the measurement line 40 passes through the reference graphic 30 and the main graphic 10 between adjacent main graphics 10, and has a distance between the main graphic 10.

[0061] By first setting the reference graphic 30 between adjacent main graphics 10, and then setting the measurement line 40 based on the relative position of the reference graphic 30 and the main graphic 10, it is convenient to automatically generate the measurement line 40 based on the relative position of the reference graphic 30 and the main graphic, thereby optimizing the process of drawing the measurement line 40 and improving the efficiency of drawing the measurement line 40.

[0062] The design layout is preprocessed, and a reference pattern 30 is set between adjacent main patterns 10, so that a measurement line 40 can be set between adjacent main patterns 10 based on the relative position of the reference pattern 30 and the main pattern 10. The measurement line 40 is used to capture the simulation development result of the auxiliary pattern 20 later.

[0063] Specifically, in this embodiment, the step of setting the reference pattern 30 between adjacent main patterns 10 includes: setting the reference pattern 30 at the midpoint position between the adjacent main patterns 10 .

[0064] By setting the reference graphic 30 at the midpoint between adjacent main graphics 10, it is helpful to reduce the difficulty of setting the reference graphic 30, improve the convenience of setting the reference graphic 30, and also facilitate the subsequent setting of the measurement line 40 based on the relative position of the reference graphic 30 and the main graphic 10.

[0065] In other embodiments, based on actual process requirements, the reference pattern may be disposed at other positions between adjacent main patterns.

[0066] In this embodiment, the reference pattern 30 is a square pattern.

[0067] It should be noted that the size of the reference pattern 30 should not be too small or too large. If the size of the reference pattern 30 is too small, it is easy to increase the difficulty of setting the reference pattern 30, and it is also easy to increase the difficulty of setting the measurement line 40 based on the relative position between the reference pattern 30 and the main pattern 10; if the size of the reference pattern 30 is too large, it is easy to affect the simulation results and increase the risk of the reference pattern 30 being displayed in the simulation results. For this reason, in this embodiment, the reference pattern 30 is a square pattern with a side length of 1 nanometer.

[0068] After the reference pattern 30 is disposed between adjacent main patterns 10 , a measurement line 40 is disposed between adjacent main patterns 10 based on the relative position of the reference pattern 30 and the main pattern 10 .

[0069] In this embodiment, the step of setting the measurement line 40 based on the relative position of the reference graphic 30 and the main graphic 10 includes: calculating the endpoint coordinates of the measurement line 40 based on the relative position of the reference graphic 30 and the main graphic 10, and there is a distance between the endpoint and the main graphic 10; based on the endpoint coordinates, generating the measurement line 40 in the direction of the connection between adjacent main graphics 10, and the measurement line 40 passes through the reference graphic 30 and the auxiliary graphic 20 located between adjacent main graphics 10.

[0070] refer to Figure 2 , step S4: based on the optimal exposure condition parameter group and the actual development data, and taking the image plane of the auxiliary pattern development as the simulation image plane, constructing a development prediction model.

[0071] Specifically, in this embodiment, the development prediction model is a sub-resolution auxiliary pattern development prediction (SRAF PrintAvoiding, SPA) model, which is used to predict whether the auxiliary pattern is developed during the optical proximity effect correction process, so as to reduce the risk of development of the auxiliary pattern during the lithography process and improve the safety of the mask and the lithography quality.

[0072] In the present embodiment, after obtaining the optimal exposure condition parameter group and the actual development data of the auxiliary graphic, a development prediction model is constructed based on the optimal exposure condition parameter group and the actual development data, and with the image plane of the auxiliary graphic development as the simulation image plane. Therefore, there is no need to construct a development prediction model based on the optical proximity effect correction model after constructing the optical proximity effect correction model, and accordingly, it is free from the dependence on the construction cycle of the optical proximity effect correction model, which is beneficial to shortening the construction cycle of the development prediction model. Moreover, the optical proximity effect correction model usually uses the image plane of the main graphic development as the simulation image plane, and the position of the image plane of the auxiliary graphic development is different from that of the main graphic development. In the present embodiment, the development prediction model is not constructed based on the optical proximity effect correction model, but with the image plane of the auxiliary graphic development as the simulation image plane. The development prediction model is constructed by using the image plane of the auxiliary graphic development as the simulation image plane, which is beneficial to improving the accuracy of the development prediction model for the auxiliary graphic development prediction.

[0073] Combined with reference Figure 6 , Figure 6 yes Figure 2 FIG. 1 is a flow chart of an embodiment of step S4 in FIG. 1 .

[0074] Specifically, in this embodiment, based on the optimal exposure condition parameter group and the actual development data, and taking the image plane of the auxiliary pattern development as the simulation image plane, step S4 of constructing the development prediction model includes:

[0075] like Figure 6 As shown, step S41: assigning initial values ​​to model parameters of the development prediction model.

[0076] Initial values ​​are assigned to the model parameters of the development prediction model so that a simulated development result can be obtained based on the optimal exposure condition parameter group and the initial values ​​of the model parameters.

[0077] like Figure 6 As shown, it should be noted that the development prediction model includes a photoresist model; the step of constructing the development prediction model also includes: before assigning initial values ​​to the model parameters of the development prediction model, step S44: simplifying the photoresist model to simplify the photoresist model into an N-level reaction with activation energy.

[0078] The photoresist model is simplified, which is beneficial to simplify the amount of calculation of the simulation development results and the steps of adjusting the model parameters of the development prediction model in the subsequent steps of calculating the simulation development results and adjusting the model parameters of the development prediction model.

[0079] In this embodiment, in the step of simplifying the photoresist model, the photoresist model is simplified to an N-order reaction with activation energy, thereby simplifying the photoresist model to a function of light intensity, that is, simplifying the photoresist model to the simplest model.

[0080] Specifically, in the semiconductor field, the chemical reaction of the main pattern development occurs inside the photoresist, and the chemical reaction of the auxiliary pattern development mainly occurs on the surface of the photoresist. In addition, in the vertical direction (perpendicular to the wafer surface), the position where the chemical reaction of the auxiliary pattern development occurs is far away from the main pattern, so the diffusion parameter has basically no effect, and there is no need to consider the diffusion effect; on the other hand, in the subsequent step of using the development prediction model to obtain the simulation development result, only the auxiliary pattern is judged whether it is developed, and the key size of the auxiliary pattern development result is not obtained. Therefore, there is no need to consider the reaction rate difference in the entire mask range. Therefore, in this embodiment, the photoresist model can be simplified to a function of light intensity, so that the photoresist model only contains one model term.

[0081] More specifically, in this embodiment, the photoresist model is expressed by formula (I):

[0082]

[0083] Where k0 refers to the reaction rate constant, C refers to the concentration distribution of the photoacid, I is the light intensity, I(x,y,z) represents the distribution of light intensity in space, and I min (NTD) refers to the minimum exposure intensity required for negative development, I max (PTD) refers to the minimum exposure intensity required for negative development, and t is the time.

[0084] As an example, in the step of simplifying the photoresist model, the photoresist model is simplified to a zero-order reaction with activation energy.

[0085] In other embodiments, the photoresist model may also be simplified into non-zero-order reactions such as first-order reactions and second-order reactions with activation energy.

[0086] like Figure 6 As shown, step S42: based on the optimal exposure condition parameter group and the initial value of the model parameter, a simulated development result is obtained, so as to subsequently determine whether the simulated development result matches the actual development data.

[0087] In this embodiment, the step of obtaining a simulation development result based on the optimal exposure condition parameter group and the initial values ​​of the model parameters includes: obtaining a simulation development result based on the optimal exposure condition parameter group and the initial values ​​of the model parameters and taking the measurement line as a measurement reference.

[0088] like Figure 6 As shown, one or more iterations of parameter optimization processing step S43 are performed.

[0089] In this embodiment, each optimization processing step S43 includes: step S431: judging whether the simulated development result matches the actual development data; step S432: when the simulated development result does not match the actual development data, adjusting the model parameters of the development prediction model; step S433: obtaining the simulated development result based on the optimal exposure condition parameter group and the adjusted model parameters, and returning to the step of judging whether the simulated development result matches the actual development data; when the simulated development result matches the actual development data, step S434: judging that the optimization processing is completed.

[0090] When the simulated development result does not match the actual development data, it means that the prediction accuracy of the development prediction model is not high. Therefore, the model parameters of the development prediction model are adjusted, and then the adjusted model parameters are used to obtain the simulated development result. This cycle is repeated until the simulated development result matches the actual development data, which means that the accuracy of the development prediction model is high.

[0091] Specifically, in this embodiment, the model parameters of the development prediction model include the simulated image plane; in each optimization process, when the simulated development result does not match the actual development data, the simulated image plane is adjusted.

[0092] In this embodiment, the step of adjusting the simulated image plane includes: collecting measurement data of a benchmark test pattern under different focal depth conditions, and obtaining a first focusing plane of the optical system through model fitting calculation; based on the measurement data and the principle of minimizing the root mean square (RMS) of the model, calculating a second focusing plane including a refraction factor; and determining a final simulated image plane based on the first focusing plane and the second focusing plane.

[0093] It should be noted that there are multiple simulation parameter combinations that can accurately predict auxiliary graphic development, and each set of simulation parameter combinations is used to determine a simulated image plane. Therefore, based on the simulation parameter combinations, the preferred parameter combinations are searched near the simulated image plane to determine the final simulated image plane.

[0094] It should also be noted that the development prediction model includes a photoresist model; in each optimization step, when the simulated development result does not match the actual development data, the step of adjusting the model parameters of the development prediction model includes: adjusting the photoresist model.

[0095] Specifically, in this embodiment, the parameters of the photoresist model include a reaction rate constant and a reaction order; the step of adjusting the photoresist model includes: determining that the reaction is a zero-order reaction, and adjusting the reaction rate constant.

[0096] Combined with reference Figure 2 In this embodiment, in the step of constructing a development prediction model based on the optimal exposure condition parameter group and actual development data, and taking the image plane of the auxiliary graphic development as the simulation image plane, the development prediction model includes a critical development condition; the method for constructing the development prediction model also includes: after constructing the development prediction model, step S6, based on actual process requirements, screening the critical development condition to obtain a critical development threshold; step S7, based on the critical development threshold, adjusting the development prediction model.

[0097] Based on actual process requirements, a critical development threshold is obtained, and then based on the critical development threshold, the development prediction model is adjusted, thereby facilitating the increase of the process window.

[0098] Correspondingly, the present invention also provides a system for constructing a development prediction model. Figure 7It is a functional block diagram of an embodiment of a system for constructing a development prediction model according to the present invention.

[0099] In this embodiment, a system for constructing a development prediction model includes: a layout providing unit 101, used to provide a design layout, wherein the design layout includes a main graphic and an auxiliary graphic arranged around the main graphic; an exposure parameter acquisition unit 102, used to obtain an optimal exposure condition parameter group; a data acquisition unit 103, used to obtain actual development data of the auxiliary graphic; and a model adjustment unit 104, used to construct a development prediction model based on the optimal exposure condition parameter group and the actual development data, and using the image plane of the auxiliary graphic development as a simulation image plane.

[0100] In the system for constructing the development prediction model, after the exposure parameter acquisition unit 102 obtains the optimal exposure condition parameter group and the data acquisition unit 103 obtains the actual development data of the auxiliary graphic, the model adjustment unit 104 constructs the development prediction model based on the optimal exposure condition parameter group and the actual development data, and takes the image plane of the auxiliary graphic development as the simulation image plane, thereby eliminating the need to construct the development prediction model based on the optical proximity effect correction model after constructing the optical proximity effect correction model, and correspondingly breaking away from the dependence on the construction cycle of the optical proximity effect correction model, which is beneficial to shortening the construction cycle of the development prediction model; moreover, the optical proximity effect correction model usually takes the image plane of the main graphic development as the simulation image plane, and the position of the image plane of the auxiliary graphic development is different from that of the main graphic development. In the embodiment of the present invention, the development prediction model is not constructed based on the optical proximity effect correction model, but is constructed with the image plane of the auxiliary graphic development as the simulation image plane, which is beneficial to improving the accuracy of the development prediction model for the auxiliary graphic development prediction.

[0101] The layout providing unit 101 is used to provide a design layout so that the exposure parameter acquiring unit 102 obtains the optimal exposure condition parameter group corresponding to the design layout and obtains actual development data of the auxiliary pattern 20 .

[0102] The design layout includes a main graphic 10 and an auxiliary graphic 20 arranged around the main graphic 10 .

[0103] The main pattern 10 is a pattern that needs to be transferred to the photoresist to form a target pattern on the substrate; the auxiliary pattern 20 is used to improve light intensity contrast, reduce edge placement error, and increase focal depth to improve the photolithography process window.

[0104] As an example, the auxiliary pattern 20 includes a sub-resolution auxiliary pattern (Sub-Resolution Assist Features, SRAF) or a scattering bar (Scattering Bar, SB). The diffraction of the sub-resolution auxiliary pattern / scattering bar interacts with the diffraction of the main pattern 10 to achieve the effect of enhancing the lithography process window, thereby improving the lithography quality of the main pattern 10.

[0105] The exposure parameter acquisition unit 102 obtains the optimal exposure condition parameter group so that the model adjustment unit 104 constructs a development prediction model based on the optimal exposure condition parameter group and actual development data and using the image plane developed by the auxiliary pattern 20 as a simulation image plane.

[0106] In this embodiment, the optimal exposure condition parameter group refers to that after the exposure process and the development process are performed using the optimal exposure condition parameter group, the critical size of the pattern formed on the photoresist meets the process requirements. Specifically, the optimal exposure condition parameter group includes the focus depth, the range allowed by the exposure amount, the optimal focal length, and the optimal exposure energy.

[0107] In a specific implementation, the exposure parameter acquisition unit 102 is used to collect exposure-energy matrix (Focus-Energy Matrix, FEM) data of the wafer, and is also used to determine the optimal exposure condition group based on the exposure-energy matrix data.

[0108] Specifically, the exposure-energy matrix is ​​a test method used to check the lithography process window and determine the optimal exposure conditions. By using different exposure focal lengths and energies in different areas on the wafer, different combinations of process conditions can be generated, so that experiments can be conducted on the wafer to determine the focus depth, the allowable range of exposure, the optimal focal length, and the optimal exposure energy, and then determine the optimal exposure condition parameter group corresponding to the design layout.

[0109] The data acquisition unit 103 obtains actual development data of the auxiliary pattern 20 so that the model adjustment unit 104 constructs a development prediction model based on the optimal exposure condition parameter group and the actual development data and using the image plane of the auxiliary pattern 20 as the simulation image plane.

[0110] Specifically, the actual development data of the auxiliary pattern 20 is used as a reference for the simulated development result in the process of constructing the development prediction model, so as to adjust the development prediction model based on the comparison result between the simulated development result and the actual development data.

[0111] In a specific implementation, based on the design layout, an exposure and development process is performed to obtain an actual development result of the auxiliary pattern 20 on the photoresist as actual development data.

[0112] In this embodiment, the system for constructing the development prediction model also includes: a preprocessing unit 105, which is used to preprocess the design layout, to set a measurement line 40 between adjacent main graphics 10, and the measurement line 40 passes through the auxiliary graphics 20 between adjacent main graphics 10 and has a gap between the main graphics 10, and outputs the preprocessed design layout to the model adjustment unit 104.

[0113] The cutline 40 is used to capture the simulation development result of the auxiliary pattern 20 .

[0114] In the semiconductor field, in the step of constructing a development prediction model using a traditional method, a shorter measurement line is usually set on the auxiliary pattern, and the measurement line is used as a reference to capture the simulation development result on the measurement line. However, when the design layout is simulated for exposure and development using the development prediction model, the simulation development pattern of the auxiliary pattern is usually not completely overlapped with the auxiliary pattern, and there is usually an offset between the simulation development pattern of the auxiliary pattern and the auxiliary pattern, that is, there is usually an offset between the simulation development pattern of the auxiliary pattern and the measurement line. If the measurement line is not processed, it is easy to fail to capture the correct simulation development result when capturing the simulation development result, thereby causing the obtained simulation development result to be distorted.

[0115] In this embodiment, by setting a measurement line between adjacent main graphics 10, the measurement line 40 passes through the auxiliary graphics 20 between adjacent main graphics 10, thereby increasing the length of the measurement line 40 and expanding the measurement range of the measurement line 40. In the process of constructing the development prediction model by the model adjustment unit 104, in the process of capturing the simulation development result of the auxiliary graphics 20 with the measurement line 40 as the measurement reference, the capture range can be expanded, thereby improving the accuracy of the simulation development result, which is conducive to avoiding the distortion of the simulation development result as much as possible.

[0116] Moreover, there is a gap between the measuring line 40 and the main pattern 10, so as to prevent the development result of the main pattern 10 from being mistakenly captured during the process of capturing the simulation development result of the auxiliary pattern 20, thereby improving the accuracy of the simulation result.

[0117] As an example, the preprocessing unit 105 includes: a first setting block (not shown) for setting a reference graphic 30 between adjacent main graphics 10; a second setting block (not shown) for setting the measurement line 40 based on the relative position of the reference graphic 30 and the main graphic 10, and the measurement line 40 passes through the reference graphic 30 and the main graphic 10 between adjacent main graphics 10 and has a distance between the main graphic 10.

[0118] By first setting the reference graphic 30 between adjacent main graphics 10, and then setting the measurement line 40 based on the relative position of the reference graphic 30 and the main graphic 10, it is convenient to automatically generate the measurement line 40 based on the relative position of the reference graphic 30 and the main graphic, thereby optimizing the process of drawing the measurement line 40 and improving the efficiency of drawing the measurement line 40.

[0119] The first setting block sets a reference pattern 30 between adjacent main patterns so that the second setting block can set a measurement line 40 between adjacent main patterns 10 based on the relative position of the reference pattern 30 and the main pattern 10, and the measurement line 40 is used to capture the simulation development result of the auxiliary pattern.

[0120] Specifically, in this embodiment, the first setting block sets the reference pattern 30 at the midpoint between the adjacent main patterns 10. By setting the reference pattern 30 at the midpoint between the adjacent main patterns 10, it is helpful to reduce the difficulty of setting the reference pattern 30, improve the convenience of setting the reference pattern 30, and also facilitate the second setting block to set the measurement line 40 based on the relative position of the reference pattern 30 and the main pattern 10.

[0121] In this embodiment, the reference pattern 30 is a square pattern.

[0122] It should be noted that the size of the reference pattern 30 should not be too small or too large. If the size of the reference pattern 30 is too small, it is easy to increase the difficulty of setting the reference pattern 30, and it is also easy to increase the difficulty of setting the measurement line 40 based on the relative position between the reference pattern 30 and the main pattern 10; if the size of the reference pattern 30 is too large, it is easy to affect the simulation results and increase the risk of the reference pattern 30 being displayed in the simulation results. For this reason, in this embodiment, the reference pattern 30 is a square pattern with a side length of 1 nanometer.

[0123] After the reference pattern 30 is disposed between adjacent main patterns 10 , a measurement line 40 is disposed between adjacent main patterns 10 based on the relative position of the reference pattern 30 and the main pattern 10 .

[0124] In this embodiment, the second setting block is used to calculate the endpoint coordinates of the measurement line 40 based on the relative positions of the reference graphic 30 and the main graphic 10, and there is a distance between the endpoint and the main graphic 10; the second setting block is also used to generate the measurement line 40 in the direction of the connection between adjacent main graphics 10 based on the endpoint coordinates, and the measurement line 40 passes through the reference graphic 30 and the auxiliary graphic 20 located between the adjacent main graphics 10.

[0125] The model adjustment unit 104 is used to construct a development prediction model based on the optimal exposure condition parameter group and the actual development data, and using the image plane of the auxiliary pattern development as the simulation image plane.

[0126] Specifically, in this embodiment, the development prediction model is a sub-resolution auxiliary pattern development prediction (SRAF PrintAvoiding, SPA) model, which is used to predict whether the auxiliary pattern is developed during the optical proximity effect correction process, so as to reduce the risk of development of the auxiliary pattern during the lithography process and improve the safety of the mask and the lithography quality.

[0127] Specifically, in this embodiment, the model adjustment unit 104 includes: an initialization block (not shown in the figure), which is used to assign initial values ​​to the model parameters of the development prediction model; a simulation block (not shown in the figure), which is used to obtain simulated development results based on the optimal exposure condition parameter group and the initial values ​​of the model parameters; and an optimization block (not shown in the figure), which is used to perform one or more iterative parameter optimization processing.

[0128] The initialization block assigns initial values ​​to the model parameters of the development prediction model so that the simulation block can obtain the simulation development result based on the optimal exposure condition parameter group and the initial values ​​of the model parameters.

[0129] It should be noted that the development prediction model includes a photoresist model; the model adjustment unit 104 also includes: a simplification block (not shown in the figure), which is used to simplify the photoresist model before assigning initial values ​​to the model parameters of the development prediction model, and simplify the photoresist model into an N-level reaction with activation energy.

[0130] The simplification block simplifies the photoresist model, thereby helping to simplify the amount of calculation of the simulation development results and the process of adjusting the model parameters of the development prediction model when calculating the simulation development results and adjusting the model parameters of the development prediction model.

[0131] In this embodiment, the photoresist model is simplified to an N-order reaction with activation energy, thereby simplifying the photoresist model to a function of light intensity, that is, simplifying the photoresist model to the simplest model.

[0132] Specifically, in the semiconductor field, the chemical reaction of the main pattern development occurs inside the photoresist, and the chemical reaction of the auxiliary pattern development mainly occurs on the surface of the photoresist. In addition, in the vertical direction (perpendicular to the wafer surface), the position where the chemical reaction of the auxiliary pattern development occurs is far away from the main pattern, so the diffusion parameter has basically no effect, and there is no need to consider the diffusion effect; on the other hand, in the subsequent step of using the development prediction model to obtain the simulation development result, only the auxiliary pattern is judged whether it is developed, and the key size of the auxiliary pattern development result is not obtained. Therefore, there is no need to consider the reaction rate difference in the entire mask range. Therefore, in this embodiment, the photoresist model can be simplified to a function of light intensity, so that the photoresist model only contains one model term.

[0133] More specifically, in this embodiment, the photoresist model is expressed by formula (II):

[0134]

[0135] Where k0 refers to the reaction rate constant, C refers to the concentration distribution of the photoacid, I is the light intensity, I(x,y,z) represents the distribution of light intensity in space, and I min (NTD) refers to the minimum exposure intensity required for negative development, I max (PTD) refers to the minimum exposure intensity required for negative development, and t is the time.

[0136] As an example, the photoresist model is simplified to a zero-order reaction with activation energy.

[0137] In other embodiments, the photoresist model may also be simplified into non-zero-order reactions such as first-order reactions and second-order reactions with activation energy.

[0138] The simulation block is used to obtain a simulated development result based on the optimal exposure condition parameter group and the initial value of the model parameter, so as to determine whether the simulated development result matches the actual development data.

[0139] In this embodiment, the simulation block obtains the simulation development result based on the optimal exposure condition parameter group and the initial value of the model parameter and taking the measurement line as the measurement reference.

[0140] In this embodiment, the optimization block includes: a judge (not shown in the figure), which is used to judge whether the simulated development result matches the actual development data; an adjuster, which is used to adjust the model parameters of the development prediction model when the simulated development result does not match the actual development data; a simulator, which is used to obtain the simulated development result based on the optimal exposure condition parameter group and the adjusted model parameters, and return it to the judge; an outputter (not shown in the figure), which is used to judge that the optimization processing is completed when the simulated development result matches the actual development data.

[0141] When the simulated development result does not match the actual development data, it means that the prediction accuracy of the development prediction model is not high. Therefore, the model parameters of the development prediction model are adjusted, and then the adjusted model parameters are used to obtain the simulated development result. This cycle is repeated until the simulated development result matches the actual development data, which means that the accuracy of the development prediction model is high.

[0142] Specifically, in this embodiment, the model parameters of the development prediction model include the simulated image plane; in each optimization process, when the simulated development result does not match the actual development data, the simulated image plane is adjusted.

[0143] More specifically, in this embodiment, the adjuster is used to collect measurement data of a benchmark test pattern under different focal depth conditions, and obtain a first focusing plane of the optical system through model fitting calculation; based on the measurement data and the principle of minimizing the root mean square (RMS) of the model, a second focusing plane including a refraction factor is calculated; based on the first focusing plane and the second focusing plane, a final simulated image plane is determined.

[0144] It should be noted that there are multiple simulation parameter combinations that can accurately predict auxiliary graphic development, and each set of simulation parameter combinations is used to determine a simulated image plane. Therefore, the adjuster searches for a preferred parameter combination near the simulated image plane based on the simulation parameter combination to determine the final simulated image plane.

[0145] It should also be noted that the development prediction model includes a photoresist model; in each optimization step, when the simulation development result does not match the actual development data, the photoresist model is also adjusted.

[0146] Specifically, in this embodiment, the parameters of the photoresist model include a reaction rate constant and a reaction order; adjusting the photoresist model includes: determining that the reaction is a zero-order reaction, and adjusting the reaction rate constant.

[0147] In this embodiment, in the process of constructing a development prediction model based on the optimal exposure condition parameter group and actual development data, and using the image plane of the auxiliary graphic development as the simulation image plane, the development prediction model includes a critical development condition; the construction system of the development prediction model also includes: a critical adjustment unit 106, which is used to screen the critical development condition based on actual process requirements to obtain a critical development threshold, and is also used to adjust the development prediction model based on the critical development threshold.

[0148] Based on actual process requirements, a critical development threshold is obtained, and then based on the critical development threshold, the development prediction model is adjusted, thereby facilitating the increase of the process window.

[0149] The embodiment of the present invention further provides a device, which can implement the method for constructing a development prediction model provided by the embodiment of the present invention by loading the method for constructing a development prediction model in the form of a program.

[0150] An optional hardware structure of the terminal device provided by the embodiment of the present invention can be as follows Figure 8 As shown, it includes: at least one processor 01, at least one communication interface 02, at least one memory 03 and at least one communication bus 04.

[0151] In the embodiment of the present invention, the number of the processor 01, the communication interface 02, the memory 03, and the communication bus 04 is at least one, and the processor 01, the communication interface 02, and the memory 03 communicate with each other through the communication bus 04;

[0152] Optionally, the communication interface 02 may be an interface of a communication module for network communication, such as an interface of a GSM module;

[0153] The processor 01 may be a central processing unit CPU, or an application specific integrated circuit ASIC (Application Specific Integrated Circuit), or one or more integrated circuits configured to implement the embodiments of the present invention.

[0154] The memory 03 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory), such as at least one disk memory.

[0155] The memory 03 stores one or more computer instructions, and the one or more computer instructions are executed by the processor 01 to implement the method for constructing a development prediction model provided in an embodiment of the present invention.

[0156] It should be noted that the above-mentioned terminal device may also include other devices (not shown) that may not be necessary for understanding the contents disclosed in the embodiments of the present invention; given that these other devices may not be necessary for understanding the contents disclosed in the embodiments of the present invention, the embodiments of the present invention will not introduce them one by one.

[0157] Correspondingly, an embodiment of the present invention further provides a storage medium, wherein the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the method for constructing a development prediction model provided by an embodiment of the present invention.

[0158] The above-mentioned embodiments of the present invention are combinations of elements and features of the present invention. Unless otherwise mentioned, the elements or features may be considered as optional. Each element or feature may be put into practice without being combined with other elements or features. In addition, the embodiments of the present invention may be constructed by combining some elements and / or features. The order of operations described in the embodiments of the present invention may be rearranged. Some constructions of any one embodiment may be included in another embodiment, and may be replaced by the corresponding construction of another embodiment. It is obvious to those skilled in the art that claims that do not have a clear reference relationship to each other in the attached claims may be combined into embodiments of the present invention, or may be included as new claims in the amendment after submitting this application.

[0159] The embodiments of the present invention can be implemented by various means such as hardware, firmware, software or a combination thereof. In a hardware configuration, the method according to the exemplary embodiment of the present invention can be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc.

[0160] In a firmware or software configuration, the embodiments of the present invention may be implemented in the form of modules, procedures, functions, etc. The software code may be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and may send data to and receive data from the processor via various known means.

[0161] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

[0162] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for constructing a development prediction model, characterized in that: include: Providing a design layout, the design layout comprising a main graphic and auxiliary graphics arranged around the main graphic; Obtaining an optimal exposure condition parameter group; Obtaining actual development data of the auxiliary pattern; Based on the optimal exposure condition parameter group and actual development data, and taking the image plane of the auxiliary pattern development as the simulation image plane, a development prediction model is constructed.

2. The method for constructing a development prediction model according to claim 1, wherein: Based on the optimal exposure condition parameter group and actual development data, and using the image plane of the auxiliary pattern development as the simulation image plane, the step of constructing a development prediction model includes: assigning initial values ​​to model parameters of the development prediction model; Based on the optimal exposure condition parameter group and the initial values ​​of the model parameters, obtaining a simulation development result; Perform one or more iterative parameter optimization processes, each optimization process includes: judging whether the simulated development result matches the actual development data; when the simulated development result does not match the actual development data, adjusting the model parameters of the development prediction model; obtaining the simulated development result based on the optimal exposure condition parameter group and the adjusted model parameters; when the simulated development result matches the actual development data, judging that the optimization process is completed.

3. The method for constructing a development prediction model according to claim 2, characterized in that: The model parameters of the development prediction model include the simulated image plane; in each optimization step, when the simulated development result does not match the actual development data, the simulated image plane is adjusted; The step of adjusting the simulated image plane includes: collecting measurement data of a benchmark test pattern under different focal depth conditions, and obtaining a first focal plane of the optical system through model fitting calculation; Based on the measured data and the principle of minimum root mean square with the model, a second focusing plane including a refraction factor is calculated; based on the first focusing plane and the second focusing plane, a final simulation image plane is determined.

4. The method for constructing a development prediction model according to claim 2, wherein: The development prediction model includes a photoresist model; the step of constructing the development prediction model also includes: before assigning initial values ​​to model parameters of the development prediction model, simplifying the photoresist model to simplify the photoresist model into an N-level reaction with activation energy.

5. The method for constructing a development prediction model according to claim 4, wherein: The photoresist model is expressed by the following formula: Where k0 refers to the reaction rate constant, C refers to the concentration distribution of the photoacid, I is the light intensity, I(x,y,z) represents the distribution of light intensity in space, and I min (NTD) refers to the minimum exposure intensity required for negative development, I max (PTD) refers to the maximum exposure intensity required for positive development, and t is the time.

6. The method for constructing a development prediction model according to claim 2, 4 or 5, characterized in that: The development prediction model includes a photoresist model; in each optimization step, when the simulation development result does not match the actual development data, the step of adjusting the model parameters of the development prediction model includes: adjusting the photoresist model; The parameters of the photoresist model include a reaction rate constant and a reaction order; the step of adjusting the photoresist model includes: determining that the reaction is a zero-order reaction, and adjusting the reaction rate constant.

7. The method for constructing a development prediction model according to claim 2, wherein: The method for constructing the development prediction model further includes: after providing the design layout and before constructing the development prediction model based on the optimal exposure condition parameter group and actual development data and using the image plane of the auxiliary pattern development as the simulation image plane, pre-processing the design layout to set a measurement line between adjacent main patterns, wherein the measurement line passes through the auxiliary pattern between the adjacent main patterns and has a gap with the main pattern; The step of obtaining a simulation development result based on the optimal exposure condition parameter group and the initial values ​​of the model parameters includes: obtaining a simulation development result based on the optimal exposure condition parameter group and the initial values ​​of the model parameters and taking the measurement line as a measurement reference.

8. The method for constructing a development prediction model according to claim 7, wherein: The step of preprocessing the design layout includes: setting a reference graphic between adjacent main graphics; and setting the measurement line based on the relative position of the reference graphic and the main graphic, wherein the measurement line passes through the reference graphic and the auxiliary graphic between adjacent main graphics and has a distance from the main graphic.

9. The method for constructing a development prediction model according to claim 8, characterized in that: The step of arranging a reference pattern between adjacent main patterns includes arranging the reference pattern at a midpoint between adjacent main patterns.

10. The method for constructing a development prediction model according to claim 8, wherein: The reference pattern is a square pattern with a side length of 1 nanometer.

11. The method for constructing a development prediction model according to claim 8, wherein: The step of setting the measurement line based on the relative position of the reference figure and the main figure includes: calculating the endpoint coordinates of the measurement line based on the relative position of the reference figure and the main figure, and there is a distance between the endpoint and the main figure; based on the endpoint coordinates, generating the measurement line in the direction of the connection between adjacent main figures, and the measurement line passes through the reference figure and the auxiliary figure located between adjacent main figures.

12. The method for constructing a development prediction model according to claim 1, wherein: In the step of constructing a development prediction model based on the optimal exposure condition parameter group and actual development data and taking the image plane of the auxiliary pattern development as the simulation image plane, the development prediction model includes a critical development condition; The method for constructing the development prediction model further includes: after constructing the development prediction model, based on actual process requirements, screening the critical development conditions to obtain a critical development threshold; Based on the critical development threshold, the development prediction model is adjusted.

13. A system for constructing a development prediction model, characterized in that: include: A layout providing unit, used for providing a design layout, wherein the design layout includes a main pattern and auxiliary patterns arranged around the main pattern; An exposure parameter acquisition unit, used to obtain an optimal exposure condition parameter group; A data acquisition unit, used to obtain actual development data of the auxiliary pattern; The model adjustment unit is used to construct a development prediction model based on the optimal exposure condition parameter group and actual development data, and using the image plane of the auxiliary graphic development as the simulation image plane.

14. A device, characterized in that The method comprises at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the method for constructing a development prediction model according to any one of claims 1 to 12.

15. A storage medium, characterized in that: The storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the method for constructing a development prediction model according to any one of claims 1-12.

Images