Array carbon-based semiconductor film material and preparation method thereof

Abstract

The invention provides an arrayed carbon-based semiconductor thin film material and a preparation method thereof, and the method comprises the steps: carrying out the bonding of a semiconductor wafer subjected to ion implantation and a supporting substrate with a sacrificial layer on the surface along the sacrificial layer, and carrying out the etching of a semiconductor thin film layer, so as to enable the semiconductor thin film layer to form an arrayed pattern, the method comprises the following steps of: obtaining an arrayed semiconductor thin film layer, removing a sacrificial layer through etching treatment to obtain a semiconductor heterogeneous material comprising the arrayed semiconductor thin film layer and a supporting substrate, and transferring the arrayed semiconductor thin film layer from the supporting substrate to a target carbon-based substrate through a transfer printing technology, so as to obtain the semiconductor heterogeneous material containing the arrayed semiconductor thin film layer and the supporting substrate. And the arrayed carbon-based semiconductor film material is obtained. Through the method, heterogeneous integration of the semiconductor and the carbon-based material with excellent performance can be realized, and the application potential of the semiconductor material in the fields of power, radio frequency and the like is further released.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an arrayed carbon-based semiconductor thin film material and a preparation method thereof. Background Art

[0002] Carbon-based materials have excellent mechanical, electrical, and thermodynamic properties and are widely used in aviation, nuclear power, photovoltaics, electronics and other fields. Heterogeneous integration of semiconductors and carbon-based materials can further release the application potential of semiconductors in power, radio frequency and other fields. The current methods mainly include heterogeneous bonding and heteroepitaxial growth. Due to the carbon-based materials themselves, heterogeneous bonding usually has a low bonding strength with semiconductor wafers, which makes it difficult to support subsequent device preparation processes. Heterogeneous epitaxy has a series of problems such as lattice mismatch, thermal mismatch, and growth defects, which leads to bottlenecks in carbon-based semiconductor materials in semiconductor power and radio frequency device heat dissipation. Therefore, there is an urgent need for an improved preparation method to overcome the above problems, improve the performance of carbon-based semiconductor materials, and further release the application potential of semiconductor materials in power, radio frequency and other fields. Summary of the invention

[0003] In order to solve the above technical problems, this application proposes an arrayed carbon-based semiconductor thin film material and a preparation method thereof, which further releases the application potential of semiconductor materials in power, radio frequency and other fields.

[0004] On the one hand, an embodiment of the present application provides a method for preparing an arrayed carbon-based semiconductor thin film material, the preparation method comprising:

[0005] Providing an ion-implanted semiconductor wafer and a supporting substrate having a sacrificial layer on the surface;

[0006] The ion-implanted semiconductor wafer and the support substrate having a sacrificial layer on the surface are bonded along the sacrificial layer to obtain a preset semiconductor heterogeneous material; the preset semiconductor heterogeneous material includes a semiconductor thin film layer, a sacrificial layer and a support substrate from top to bottom;

[0007] Etching the semiconductor thin film layer to form an array pattern on the semiconductor thin film layer, thereby obtaining an arrayed semiconductor thin film layer;

[0008] Etching the sacrificial layer to remove the sacrificial layer, thereby obtaining a semiconductor heterogeneous material including an arrayed semiconductor thin film layer and a supporting substrate;

[0009] A target carbon-based substrate is provided, and an arrayed semiconductor thin film layer is transferred from a supporting substrate to the target carbon-based substrate by a transfer technique to obtain an arrayed carbon-based semiconductor thin film material.

[0010] Furthermore, the semiconductor wafer implanted with ions and the supporting substrate having a sacrificial layer on the surface are bonded along the sacrificial layer to obtain the preset semiconductor heterogeneous material, including:

[0011] The ion-implanted semiconductor wafer and the support substrate having a sacrificial layer on the surface are bonded along the sacrificial layer to obtain a first bonding structure; the ion-implanted semiconductor wafer includes a defect layer formed by ion implantation;

[0012] Performing high temperature annealing and peeling on the first bonding structure, so that the first bonding structure is peeled along the defective layer to obtain a second bonding structure;

[0013] The second bonding structure is thinned and flattened, and repaired by high-temperature annealing to obtain a preset semiconductor heterogeneous material.

[0014] Furthermore, the sacrificial layer is etched to remove the sacrificial layer to obtain a semiconductor heterogeneous material including an arrayed semiconductor thin film layer and a supporting substrate, including:

[0015] Performing an etching process on the sacrificial layer to remove the sacrificial layer not covered by the arrayed semiconductor thin film layer;

[0016] Prepare a photoresist anchoring structure on the surface of the arrayed semiconductor thin film layer to fix the arrayed semiconductor thin film layer;

[0017] The sacrificial layer is subjected to a secondary etching process so that the sacrificial layer is completely removed, thereby obtaining a semiconductor heterogeneous material including an arrayed semiconductor thin film layer and a supporting substrate.

[0018] Furthermore, before providing a target carbon-based substrate and transferring the arrayed semiconductor thin film layer from the supporting substrate to the target carbon-based substrate by a transfer technique to obtain an arrayed carbon-based semiconductor thin film material, the method further includes:

[0019] Preparing a polyvinyl alcohol solution of a preset concentration, and curing the polyvinyl alcohol solution of the preset concentration to obtain a current polyvinyl alcohol glue;

[0020] Applying a polyvinyl alcohol solution of a preset concentration on the current polyvinyl alcohol glue, performing a curing process to obtain a new polyvinyl alcohol glue, and using the new polyvinyl alcohol film as the current polyvinyl alcohol glue;

[0021] Repeatedly apply a polyvinyl alcohol solution of a preset concentration on a single layer of the current polyvinyl alcohol glue, solidify it to obtain a new polyvinyl alcohol glue, and use the new polyvinyl alcohol film as the current polyvinyl alcohol glue again until a polyvinyl alcohol glue of a preset thickness is obtained.

[0022] Furthermore, a target carbon-based substrate is provided, and the arrayed semiconductor thin film layer is transferred from the supporting substrate to the target carbon-based substrate by a transfer technique to obtain an arrayed carbon-based semiconductor thin film material, including:

[0023] Under a preset heating temperature and a preset heating time, the arrayed semiconductor thin film layer is subjected to a search process by using polydimethylsiloxane glue and polyvinyl alcohol glue to separate the arrayed semiconductor thin film layer from the supporting substrate layer, thereby obtaining polyvinyl alcohol glue with the arrayed semiconductor thin film layer;

[0024] And the arrayed semiconductor film layer is printed by polydimethylsiloxane glue and polyvinyl alcohol glue with an arrayed semiconductor film layer, so that the arrayed semiconductor film layer is transferred from the supporting substrate to the target carbon-based substrate to obtain an arrayed carbon-based semiconductor film material.

[0025] Furthermore, after providing a target carbon-based substrate as described above, transferring the arrayed semiconductor thin film layer from the supporting substrate to the target carbon-based substrate by a transfer technique to obtain an arrayed carbon-based semiconductor thin film material, the method further includes:

[0026] Flattening and thinning the surface of the arrayed carbon-based semiconductor thin film material;

[0027] The arrayed carbon-based semiconductor film material is subjected to high-temperature annealing treatment in a vacuum and protective atmosphere to enhance the interface strength of the arrayed carbon-based semiconductor film material.

[0028] Further, the semiconductor wafer includes at least one of silicon, germanium, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, gallium nitride, gallium oxide, aluminum nitride, zinc oxide, and diamond; the target carbon-based substrate is a material system with carbon atoms as the skeleton;

[0029] The thickness of the sacrificial layer is 1nm to 10 microns; the thickness of the semiconductor thin film layer is 0.1μm to 10μm, and the roughness is less than 0.5nm; the characteristic size of the arrayed semiconductor thin film layer is 1nm to 1mm;

[0030] The conditions for the high temperature annealing stripping are: temperature between 100°C and 1000°C, and time between 1h and 100h.

[0031] Furthermore, the preset concentration is 2% to 20%; the preset thickness is 0.05 to 5 mm;

[0032] The preset heating temperature is 40-190° C.; the preset heating time is 0.5 min-10 min.

[0033] Furthermore, the conditions of the high temperature annealing treatment are: temperature 0 to 900° C., annealing time 4 min to 40 h.

[0034] On the other hand, an embodiment of the present application provides an arrayed carbon-based semiconductor thin film material, which is prepared by the above-mentioned method for preparing an arrayed carbon-based semiconductor thin film material.

[0035] The embodiment of the present application provides an arrayed carbon-based semiconductor film material and a preparation method thereof, firstly, a semiconductor wafer implanted with ions and a supporting substrate with a sacrificial layer on the surface are bonded along the sacrificial layer to obtain a preset semiconductor heterogeneous material, then the semiconductor film layer is etched to form an arrayed pattern in the semiconductor film layer to obtain an arrayed semiconductor film layer; the sacrificial layer is etched to remove the sacrificial layer to obtain a semiconductor heterogeneous material including an arrayed semiconductor film layer and a supporting substrate, and then the arrayed semiconductor film layer is transferred from the supporting substrate to the target carbon-based substrate by transfer technology to obtain an arrayed carbon-based semiconductor film material. This preparation method realizes the heterogeneous integration of semiconductors and carbon-based materials with excellent performance, so that there is almost no amorphous transition region at the interface between the semiconductor and the carbon-based, and there is no restriction on the type of constituent materials, and it is not affected by physical factors such as lattice mismatch and thermal mismatch. It can be used as a solution to break through the heat dissipation bottleneck of semiconductor power and radio frequency devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0037] Figure 1 It is a schematic flow chart of a method for preparing an arrayed carbon-based semiconductor thin film material provided in an embodiment of the present application.

[0038] Figure 2 It is a schematic diagram of the preparation process of an arrayed carbon-based semiconductor thin film material provided in an embodiment of the present application.

[0039] Figure 3 It is a schematic diagram of a process for preparing a semiconductor wafer after ion implantation provided in an embodiment of the present application.

[0040] Figure 4 It is a schematic structural diagram of a support substrate having a dielectric layer on its surface provided in an embodiment of the present application.

[0041] Figure 5It is a schematic flow chart of a method for preparing a preset semiconductor heterogeneous material provided in an embodiment of the present application.

[0042] Figure 6 It is a schematic diagram of a preparation process of a preset semiconductor heterogeneous material provided in an embodiment of the present application.

[0043] Figure 7 It is a schematic flow chart of a preparation method for releasing a sacrificial layer provided in an embodiment of the present application.

[0044] Figure 8 It is a schematic diagram of a preparation process for releasing a sacrificial layer provided in an embodiment of the present application.

[0045] Fig. 9 It is a schematic flow chart of a method for preparing polyvinyl alcohol glue provided in an embodiment of the present application.

[0046] Fig.10 It is a flow chart of a transfer processing method provided in an embodiment of the present application.

[0047] Fig.11 It is a schematic diagram of a process for searching and processing semiconductor materials provided in an embodiment of the present application.

[0048] Fig.12 It is a schematic diagram of a process for printing semiconductor materials provided in an embodiment of the present application.

[0049] The following is an explanation of the reference numerals:

[0050] 100-semiconductor thin film layer; 101-arrayed semiconductor thin film layer; 102-photoresist anchoring structure; 200-support substrate; 300-sacrificial layer; 400-defective layer; 500-target carbon-based substrate; 600-polyvinyl alcohol glue; 700-polydimethylsiloxane glue; 800-glass slide; 900-solvent. DETAILED DESCRIPTION

[0051] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0052] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic view is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional space dimensions of length, width and depth should be included.

[0053] For ease of description, spatial relational terms such as “under”, “below”, “below”, “below”, “over”, etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatial relational terms are intended to include other orientations of the device in use or operation in addition to the orientation depicted in the drawings, and may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, so that the first and second features may not be in direct contact. In addition, when a layer is referred to as being “between” two layers, it may be the only layer between the two layers, or one or more intervening layers may also be present.

[0054] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0055] Semiconductor transfer technology is a technology used to transfer semiconductor materials from a donor substrate to a target substrate. It is a van der Waals integration method that has a wide range of applications in flexible electronics, optoelectronics, biomedical sensors, etc. This technology can achieve arrayed patterning of semiconductor thin film layers with feature sizes ranging from nanometers to millimeters.

[0056] The key steps of semiconductor transfer technology include:

[0057] Pick-up or retrieval: Use an elastomeric stamp (usually polydimethylsiloxane (PDMS)) to pick up semiconductor functional device components, such as thin films, nanowires, nanotubes, etc., that have been pre-fabricated on a donor substrate.

[0058] Place or print: Place the semiconductor device component on the stamp onto the target substrate, then remove the stamp to fix the device component on the target substrate.

[0059] The advantages of this technology include: it can achieve the manufacture of high-performance electronic systems; the assembly process is deterministic, with high precision and high efficiency; it can be repeated and is suitable for large-scale integration; some transfer techniques can be performed at room temperature, reducing costs; and it is applicable to a variety of materials and structures.

[0060] The basic principle involves fracture mechanics, where the transfer process depends on the adhesion strength between the stamp and the ink (semiconductor material) compared to the adhesion strength between the ink and the target substrate. By varying these adhesion strengths, pick-up and placement of the semiconductor material can be achieved.

[0061] On the one hand, if Figure 1 and Figure 2 As shown, the embodiment of the present application provides a method for preparing an arrayed carbon-based semiconductor thin film material, the preparation method comprising:

[0062] S10 : providing a semiconductor wafer 100 implanted with ions and a support substrate 200 having a sacrificial layer 300 on its surface.

[0063] For example, Figure 3 As shown, the above-mentioned ion-implanted semiconductor wafer 100 refers to a semiconductor wafer that is pre-implanted with gas ions of specific energy and dosage to form a defective layer 400 at a certain depth from its surface; specifically, the depth of ion implantation is less than the thickness of the semiconductor wafer, and the specific implantation conditions are determined according to the actual application. The defective layer 400 is also called a damaged layer; optionally, the energy and dosage of ion implantation are not specifically limited in the embodiment.

[0064] The structure of the support substrate 200 having a sacrificial layer 300 on the surface is as follows: Figure 4 As shown, the sacrificial layer 300 is prepared on the surface of the supporting substrate 200 layer in order to ensure the quality and integrity of the semiconductor film, while providing more design flexibility and processing convenience.

[0065] Optionally, the support substrate 200 is used as a donor substrate in the transfer technology process, and optionally, the support substrate 200 includes but is not limited to sapphire, silicon, silicon carbide, etc. The thickness of the support substrate 200 is not limited here, as long as it can support the sacrificial layer 300 and the ion-implanted semiconductor wafer.

[0066] S30: Bonding the ion-implanted semiconductor wafer and the supporting substrate 200 having a sacrificial layer 300 on the surface along the sacrificial layer 300 to obtain a preset semiconductor heterogeneous material; the preset semiconductor heterogeneous material includes a semiconductor thin film layer 100, a sacrificial layer 300 and a supporting substrate 200 from top to bottom.

[0067] Exemplarily, the ion-implanted semiconductor wafer is bonded to the support substrate 200 having a sacrificial layer 300 on its surface, and the bonding method includes but is not limited to hydrophilic bonding, surface activated bonding, and the like.

[0068] S50 : etching the semiconductor thin film layer 100 to form an arrayed pattern on the semiconductor thin film layer 100 , thereby obtaining an arrayed semiconductor thin film layer 101 .

[0069] Exemplarily, the method of etching the semiconductor thin film layer 100 may be photolithography, etching, etc., and the specific process may be:

[0070] 1. Photolithography: First, a layer of photoresist is applied on the semiconductor thin film layer 100, and a mask is used for exposure, and the pattern on the mask is transferred to the photoresist through a development process; the pattern on the mask refers to the arrayed pattern of the arrayed semiconductor formed in the end;

[0071] 2. Etching: Then the etching process is carried out. The etching can be wet or dry (plasma etching), which accurately etches away the film area not protected by the photoresist, thereby forming the desired arrayed pattern on the semiconductor film.

[0072] In the etching process, in order to achieve high-density and high-uniformity arrayed patterns, it is necessary to precisely control the etching conditions, including parameters such as etching time, gas flow, pressure and temperature. In addition, some post-processing steps may be required after etching, such as removal of the hard mask, to ensure the quality and performance of the final product.

[0073] S70 : etching the sacrificial layer 300 to remove the sacrificial layer 300 , thereby obtaining a semiconductor heterogeneous material including an arrayed semiconductor thin film layer 101 and a supporting substrate 200 .

[0074] Exemplarily, the etching process of the sacrificial layer 300 is performed through the array pores in the arrayed semiconductor thin film layer 101 .

[0075] The sacrificial layer 300 may be etched by wet etching or dry etching. After the sacrificial layer 300 is removed, the supporting substrate 200 is exposed.

[0076] S90: providing a target carbon-based substrate 500, and transferring the arrayed semiconductor thin film layer 101 from the supporting substrate 200 to the target carbon-based substrate 500 by transfer technology to obtain an arrayed carbon-based semiconductor thin film material.

[0077] Exemplarily, semiconductor transfer technology is a method of transferring micrometer- or nanometer-scale electronic devices from a donor substrate (donor substrate) to a target substrate (receiver substrate).

[0078] The arrayed carbon-based semiconductor thin film material comprises an arrayed semiconductor thin film layer 101 and a target carbon-based substrate 500 . The arrayed semiconductor thin film layer 101 is located on the surface of the target carbon-based substrate 500 .

[0079] The present application provides a recipient substrate as a target carbon-based substrate 500, and uses a transfer technology to transfer the arrayed semiconductor thin film layer 101 from the supporting substrate 200 to the target carbon-based substrate 500 to obtain an arrayed carbon-based semiconductor thin film material.

[0080] The embodiment of the present application first bonds the ion-implanted semiconductor wafer and the supporting substrate 200 with a sacrificial layer 300 on the surface along the sacrificial layer 300 to obtain a preset semiconductor heterogeneous material, and then etches the semiconductor film layer 100 to form an arrayed pattern in the semiconductor film layer 100 to obtain an arrayed semiconductor film layer 101; etches the sacrificial layer 300 to remove the sacrificial layer 300 to obtain a semiconductor heterogeneous material including an arrayed semiconductor film layer 101 and a supporting substrate 200, and then transfers the arrayed semiconductor film layer 101 from the supporting substrate 200 to the target carbon-based substrate 500 by transfer technology to obtain an arrayed carbon-based semiconductor film material. This preparation method realizes the heterogeneous integration of semiconductors and carbon-based materials with excellent performance, so that there is almost no amorphous transition region at the interface between the semiconductor and the carbon-based, and there is no restriction on the type of constituent materials, and it is not affected by physical factors such as lattice mismatch and thermal mismatch, which can be used as a solution to break through the heat dissipation bottleneck of semiconductor power and radio frequency devices.

[0081] The following is attached to the instruction manual Figure 3-11 , further introduces the preparation method of arrayed carbon-based semiconductor thin film materials.

[0082] As an optional implementation, Figure 5 and Figure 6 As shown, in the above step S30, the semiconductor wafer implanted with ions and the supporting substrate 200 having a sacrificial layer 300 on the surface are bonded along the sacrificial layer 300 to obtain a preset semiconductor heterogeneous material, including:

[0083] S31: bonding the ion-implanted semiconductor wafer and the supporting substrate 200 having the sacrificial layer 300 on the surface thereof along the sacrificial layer 300 to obtain a first bonding structure; the ion-implanted semiconductor wafer includes a defect layer 400 formed by ion implantation.

[0084] Illustratively, the bonding method includes but is not limited to hydrophilic bonding, surface activated bonding, and the like.

[0085] As an optional embodiment, the semiconductor wafer includes at least one of silicon, germanium, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, gallium nitride, gallium oxide, aluminum nitride, zinc oxide, and diamond; the sacrificial layer 300 has a thickness of 1 nm to 10 microns.

[0086] Optionally, the sacrificial layer 300 is preferably made of silicon oxide, but may also be made of other materials.

[0087] Optionally, the method for preparing the sacrificial layer 300 on the supporting substrate 200 may be the same as the prior art, and is not specifically limited in the present application.

[0088] Optionally, in the preparation of the semiconductor wafer after ion implantation, the depth of ion implantation is determined according to the thickness of the semiconductor thin film layer 100 retained after stripping.

[0089] S32: performing high temperature annealing and peeling on the first bonding structure, so that the first bonding structure is peeled along the defective layer 400 to obtain a second bonding structure.

[0090] For example, Figure 6 As shown, the first bonding structure is subjected to high temperature annealing and peeling, so that the first bonding structure is peeled along the defective layer 400, the semiconductor wafer on one side of the damaged layer surface is removed, and the semiconductor wafer and the supporting substrate 200 on the other side of the damaged layer are retained to obtain a second bonding structure, which is composed of a semiconductor film layer 100, a sacrificial layer 300 and a supporting substrate 200 from top to bottom, and the semiconductor film layer 100 is located on the surface of the supporting substrate 200. Here, the semiconductor wafer on the other side of the damaged layer is the semiconductor film layer 100.

[0091] As an optional implementation, the conditions for high temperature annealing stripping are: temperature between 100° C. and 1000° C., and time between 1 hour and 100 hours.

[0092] It should be noted that at this time, there may be a damaged layer on the surface of the semiconductor wafer.

[0093] S33: Thinning and flattening the second bonding structure, and performing high-temperature annealing repair to obtain the preset semiconductor heterogeneous material.

[0094] Exemplarily, thinning and flattening the second bonding structure refers to thinning and flattening the semiconductor wafer side of the second bonding structure. The specific method may be chemical mechanical polishing, the purpose of which is to remove the damaged layer that may remain on the surface of the semiconductor wafer.

[0095] Subsequently, high temperature annealing is used to repair the lattice damage in the semiconductor wafer caused by ion implantation, thereby improving the lattice quality of the semiconductor film, and obtaining the preset semiconductor heterogeneous material. The structure of the preset semiconductor heterogeneous material is, from top to bottom, a semiconductor film layer 100, a sacrificial layer 300 and a supporting substrate 200.

[0096] As an optional implementation, after thinning and planarization, the semiconductor thin film layer 100 has a thickness of 0.1 μm to 10 μm and a roughness of less than 0.5 nm;

[0097] It should be noted that the temperature and time of the above-mentioned high temperature annealing repair are not limited here.

[0098] Through steps S31 to S33, a preset semiconductor heterogeneous material is prepared and synthesized. This preparation method is an ion beam stripping and transfer technology. During the preparation process, the thickness and surface roughness of the semiconductor film can be precisely controlled by controlling the depth of ion implantation into the semiconductor wafer and controlling the thinning and flattening treatment.

[0099] The embodiment of the present application obtains a first bonding structure by bonding a semiconductor wafer that has been ion-implanted and a supporting substrate 200 having a sacrificial layer 300 on its surface, and anneals the first bonding structure so that the first bonding structure is peeled off along the defect layer 400 formed by the ion implantation to form a second bonding structure, and flattens and anneals the second bonding structure to repair the lattice damage formed by the ion implantation, thereby obtaining a semiconductor heterostructure including a semiconductor thin film layer 100, a sacrificial layer 300 and a supporting substrate 200, which is used to realize the transfer of the semiconductor thin film to the target carbon-based substrate 500, thereby laying a foundation for the preparation of carbon-based semiconductor materials with excellent performance.

[0100] As an optional implementation, in the above step S50, the characteristic size of the arrayed semiconductor thin film layer 101 is 1 nm to 1 mm.

[0101] As an optional implementation, in the above step S70, if Figure 7 and Figure 8 As shown, the sacrificial layer 300 is etched to remove the sacrificial layer 300, and a semiconductor heterogeneous material including an arrayed semiconductor thin film layer 101 and a supporting substrate 200 is obtained, including:

[0102] S71 : performing an etching process on the sacrificial layer 300 to remove the sacrificial layer 300 not covered by the arrayed semiconductor thin film layer 101 .

[0103] Exemplarily, the sacrificial layer 300 is etched once with an etchant to remove the sacrificial layer 300 in the area not covered by the semiconductor layer, exposing the support substrate 200 so that the photoresist can contact the support substrate 200 .

[0104] Optionally, the corrosive agent includes but is not limited to hydrofluoric acid HF, buffered oxide etching solution BOE, etc.

[0105] Optionally, the one etching process may be wet etching or dry etching.

[0106] S72 : preparing a photoresist anchoring structure 102 on the surface of the arrayed semiconductor thin film layer 101 to fix the arrayed semiconductor thin film layer 101 .

[0107] Exemplarily, a specific photoresist anchoring structure 102 is prepared on the sample surface to fix the arrayed semiconductor film, so that the arrayed semiconductor film pattern does not deviate or fall off during the etching process and the subsequent transfer process.

[0108] S73 : performing a secondary etching process on the sacrificial layer 300 so that the sacrificial layer 300 is completely removed, thereby obtaining a semiconductor heterogeneous material including an arrayed semiconductor thin film layer 101 and a supporting substrate 200 .

[0109] Exemplarily, the sacrificial layer 300 is continuously etched by wet etching, dry etching or the like to completely remove the sacrificial layer 300 in all regions, so that the semiconductor film can be picked up by the soluble glue.

[0110] Soluble glue finger transfer technology is used to pick up the semiconductor elastomeric stamp that has been pre-fabricated on the donor substrate.

[0111] The embodiment of the present application removes the sacrificial layer 300 through two etching processes so that the semiconductor thin film layer 100 can be picked up by the soluble glue. At the same time, the semiconductor thin film pattern with an array of photoresist anchoring structures 102 is prepared so that it will not shift or fall off during the etching process and the subsequent transfer process, which is beneficial to ensure the accuracy and high reliability of the transfer process and realize the heterogeneous integration of semiconductors and carbon-based materials with excellent performance.

[0112] As an optional implementation, Fig. 9 As shown, before the above step S50, the embodiment of the present application further provides a method for preparing a soluble glue for transferring the semiconductor thin film layer 100, which specifically includes:

[0113] S81: preparing a polyvinyl alcohol solution of a preset concentration, and curing the polyvinyl alcohol solution of the preset concentration to obtain the current polyvinyl alcohol glue 600.

[0114] Exemplarily, the preset concentration is 2% to 20%, and the method for preparing the solution includes:

[0115] 1. Prepare polyvinyl alcohol powder and deionized water corresponding to the preset solubility;

[0116] 2. Heat the deionized water to 50-90°C, slowly add a small amount of powder to the water while stirring continuously, ensuring that no lumps are formed in the solution, add once every period of time (1-10 minutes) until all the powder is added, and then keep heating and stirring for a long time (10-30 hours) to completely dissolve the powder. The amount of the small amount of powder can be divided into multiple portions according to the total amount of polyvinyl alcohol powder weighed. After stopping heating, filter the polyvinyl alcohol solution to obtain a polyvinyl alcohol solution of a preset concentration.

[0117] Optionally, the stirring may be mechanical stirring or magnetic stirring, preferably magnetic stirring.

[0118] Optionally, the above filtration is preferably performed by filter paper filtration, and the mesh size of the filter paper is determined according to actual conditions.

[0119] The curing methods for the polyvinyl alcohol solution of the preset concentration include but are not limited to ultraviolet curing, thermal curing, coating and drying processes, etc. The following takes the coating and drying process as an example to introduce the curing film forming process:

[0120] 1. Uniformly apply a polyvinyl alcohol solution of a preset concentration on a clean substrate to obtain a substrate coated with the polyvinyl alcohol solution;

[0121] 2. Place the substrate coated with the polyvinyl alcohol solution in a fume hood and dry it naturally for 5 to 25 hours to obtain a single layer of polyvinyl alcohol glue, which is used as the current polyvinyl alcohol glue.

[0122] After the above process, the thickness of the obtained single-layer polyvinyl alcohol adhesive is between 0.05 mm and 1 mm.

[0123] Optionally, the drying process may also be drying in an oven at a temperature between 60° C. and 100° C. for 1 to 5 hours.

[0124] Optionally, the substrate may be a glass slide.

[0125] S82: applying a polyvinyl alcohol solution of a preset concentration onto the current polyvinyl alcohol glue, performing a curing process to obtain a new polyvinyl alcohol glue, and using the new polyvinyl alcohol film as the current polyvinyl alcohol glue.

[0126] S83: Repeatedly apply a polyvinyl alcohol solution of a preset concentration on the current single layer of polyvinyl alcohol glue, cure it to obtain a new polyvinyl alcohol glue, and apply the new polyvinyl alcohol film to the current polyvinyl alcohol glue again until a polyvinyl alcohol glue of a preset thickness is obtained.

[0127] Exemplarily, a polyvinyl alcohol solution of a preset concentration is applied to the current polyvinyl alcohol glue, and a curing treatment is performed using the same curing method as step S81 to obtain a new polyvinyl alcohol glue. The new polyvinyl alcohol film is used as the current polyvinyl alcohol glue again, and the S81 process is repeated to obtain a thicker polyvinyl alcohol glue. The actual number of repetitions is determined according to actual needs. In this way, a polyvinyl alcohol glue that meets the requirements of the transfer arrayed semiconductor thin film layer 101, i.e., a polyvinyl alcohol glue of a preset thickness, is prepared.

[0128] As an optional implementation, the preset thickness is 0.05 mm to 5 mm.

[0129] The embodiment of the present application prepares a PVA glue suitable for transferring wafer-level semiconductor thin film arrays by regulating parameters such as the PVA solution ratio, PVA thickness, and PVA curing time, which is beneficial to ensure the accuracy and high reliability of the transfer process and realize the heterogeneous integration of semiconductors and carbon-based materials with excellent performance.

[0130] As an optional implementation, Figure 10-12 As shown, in the above step S90, a target carbon-based substrate 500 is provided, and the arrayed semiconductor thin film layer 101 is transferred from the support substrate 200 to the target carbon-based substrate 500 by a transfer technology to obtain an arrayed carbon-based semiconductor thin film material, including:

[0131] S91: Under a preset heating temperature and a preset heating time, the arrayed semiconductor thin film layer 101 is retrieved by using the polydimethylsiloxane glue 700 and the polyvinyl alcohol glue 600 to separate the arrayed semiconductor thin film layer 101 from the supporting substrate 200 layer, thereby obtaining the polyvinyl alcohol glue 600 with the arrayed semiconductor thin film layer 101.

[0132] As an optional implementation manner, the preset heating temperature is 40 to 190° C.; the preset heating time is 0.5 min to 10 min.

[0133] As an optional implementation, the target carbon-based substrate 500 is a material system with carbon atoms as the skeleton; specifically, it includes pure carbon systems such as diamond and graphite and polyatomic systems such as silicon carbide and high molecular organic matter.

[0134] For example, Fig.11 As shown, step S91 is the first step in the transfer technology: retrieval processing or picking up. The embodiment of the present application refers to picking up the arrayed semiconductor film pre-fabricated on the supporting substrate 200 using polydimethylsiloxane (PDMS). The specific process is as follows:

[0135] S911: providing a polydimethylsiloxane film, and bonding the polydimethylsiloxane film to the glass slide 300.

[0136] Exemplarily, PDMS is selected as the flexible template material, and the flat PDMS is adhered to the glass slide 300 for subsequent replication and transfer of the arrayed semiconductor thin film layer 101 .

[0137] The reason why PDMS is chosen as the flexible template material here is that it has the advantages of excellent flexibility, biocompatibility, chemical stability, breathability, high resolution, and easy demolding.

[0138] S912: cutting a preset area of ​​polyvinyl alcohol glue 600, and sticking the preset area of ​​polyvinyl alcohol glue 600 to the surface of the polydimethylsiloxane film to obtain a three-layer structure; the three-layer structure is the preset area of ​​polyvinyl alcohol glue 600, the polydimethylsiloxane film and the slide glass 300 from top to bottom.

[0139] Exemplarily, the preset area is greater than or equal to the area of ​​the above-mentioned glass slide 300, and the polyvinyl alcohol glue 600 of the preset area is cut and pasted on the surface of PDMS to form a three-layer structure, which includes the polyvinyl alcohol glue 600 of the preset area, the polydimethylsiloxane film and the glass slide 300 from top to bottom.

[0140] Optionally, the method of cutting the polyvinyl alcohol adhesive 600 of a preset area may be cutting with a blade.

[0141] S913: Lay the surface of the polyvinyl alcohol glue 600 of a preset area on the surface of the arrayed semiconductor thin film layer 101, and then heat at a preset heating temperature for a preset heating time to separate the polyvinyl alcohol glue 600 from the polydimethylsiloxane film to obtain a new three-layer structure; the new three-layer structure is, from top to bottom, a supporting substrate 200, an arrayed semiconductor thin film layer 101 and polyvinyl alcohol glue 600.

[0142] For example, a pre-set area of ​​polyvinyl alcohol glue 600 is placed away from the surface of the glass slide 300 and in close contact with the surface of the arrayed semiconductor film layer 101, and then heated at 40 to 190°C for 0.5 to 10 minutes to separate PVA and PDMS. At this point, a new three-layer structure is obtained, which is the supporting substrate 200, the arrayed semiconductor film layer 101 and the polyvinyl alcohol glue 600 from top to bottom.

[0143] S915: slowly tear off the polyvinyl alcohol glue 600 in the new three-layer structure, so that the arrayed semiconductor thin film layer 101 is picked up onto the polyvinyl alcohol glue 600, and the polyvinyl alcohol glue 600 with the arrayed semiconductor thin film layer 101 is obtained.

[0144] Exemplarily, the polyvinyl alcohol glue 600 in the new three-layer structure is slowly torn off to obtain the polyvinyl alcohol glue 600 adhered with the arrayed semiconductor thin film layer 101 .

[0145] Optionally, tweezers may be used to slowly tear off the polyvinyl alcohol glue 600 in the new three-layer structure.

[0146] S916: The polyvinyl alcohol glue 600 with the arrayed semiconductor film layer 101 is re-bonded to the polydimethylsiloxane film to obtain a four-layer structure; the four-layer structure is, from top to bottom, the arrayed semiconductor film layer 101, the polyvinyl alcohol glue 600 of a preset area, the polydimethylsiloxane glue 700 and the glass slide 300.

[0147] Exemplarily, the polyvinyl alcohol glue 600 with the arrayed semiconductor film layer 101 is re-adhered to the polydimethylsiloxane film, so that the PVA and the surface of PMDS are bonded again to obtain a four-layer structure, which, from top to bottom, includes the arrayed semiconductor film layer 101, the polyvinyl alcohol glue 600 of a preset area, the polydimethylsiloxane glue 700 and the glass slide 300. At this time, the retrieval of the arrayed semiconductor film layer 101 is completed and it is separated from the supporting substrate 200.

[0148] S92: The arrayed semiconductor thin film layer 101 is printed by using polydimethylsiloxane glue 700 and polyvinyl alcohol glue 600 with the arrayed semiconductor thin film layer 101, so that the arrayed semiconductor thin film layer 101 is transferred from the supporting substrate 200 to the target carbon-based substrate 500 to obtain an arrayed carbon-based semiconductor thin film material.

[0149] For example, Fig.12 As shown, step S92 is the second step in the transfer technology: Place or print: place the arrayed semiconductor film layer 101 on the polydimethylsiloxane glue 700 on the target carbon-based substrate 500, and then remove the polydimethylsiloxane glue 700 to fix the arrayed semiconductor film layer 101 on the target carbon-based substrate 500. The specific process includes:

[0150] S921: Bond the arrayed semiconductor thin film layer 101 in the four-layer structure to the target carbon-based substrate 500, so that the polyvinyl alcohol glue 600 of a preset area is bonded to the target carbon-based substrate 500, and heat at a preset heating temperature for a preset heating time to separate the polyvinyl alcohol glue 600 and the polydimethylsiloxane glue 700 of a preset area to obtain a preset arrayed carbon-based semiconductor thin film material.

[0151] Exemplarily, the arrayed semiconductor film layer 101 is bonded to the target carbon-based substrate 500. Because there is a gap in the arrayed pattern of the arrayed semiconductor film layer 101, the PVA is bonded to the target carbon-based substrate 500. At this time, the PVA and PDMS are separated by heating at a temperature of 40 to 190° C. for 0.5 to 10 minutes to obtain a preset arrayed carbon-based semiconductor film material. The preset arrayed carbon-based semiconductor film material is, from top to bottom, a preset area of ​​polyvinyl alcohol glue 600, an arrayed semiconductor film layer 101, and a target carbon-based substrate 500.

[0152] S922: dissolving the polyvinyl alcohol glue 600 of a preset area in the preset arrayed carbon-based semiconductor thin film material, and removing the photoresist anchoring structure 102 to obtain the arrayed carbon-based semiconductor thin film material.

[0153] Exemplarily, a preset arrayed carbon-based semiconductor thin film material is placed in a solvent 900, the polyvinyl alcohol glue 600 is dissolved, and the sample is taken out and blown dry; then, the photoresist anchoring structure 102 on the surface of the arrayed semiconductor film layer 101 is taken out to obtain an arrayed carbon-based semiconductor thin film material.

[0154] Optionally, the solvent 900 may be 18 Mohm ultrapure water.

[0155] It should be noted that the arrayed carbon-based semiconductor thin film material obtained by transfer technology is a van der Waals heterostructure.

[0156] It should be noted that the above transfer process is completed through a wafer-level transfer and alignment system, using a vacuum adsorption system, a multi-dimensional sample stage and a confocal microscopy system to achieve sample fixation, movement and precise alignment. The heating system is used to separate polyvinyl alcohol glue 600 (PVA) and polydimethylsiloxane (PDMS), and the semiconductor film retrieval and printing are achieved by controlling the heating temperature and heating time.

[0157] In the embodiment of the present application, the arrayed semiconductor thin film layer 101 is transferred from the supporting substrate 200 to the target carbon-based substrate 500 through transfer technology to obtain an arrayed carbon-based semiconductor thin film material. This preparation method realizes the heterogeneous integration of semiconductors and carbon-based materials with excellent performance, so that there is almost no amorphous transition area at the interface between the semiconductor and the carbon base, and there is no restriction on the type of constituent materials, and it is not affected by physical factors such as lattice mismatch and thermal mismatch. It can provide a solution to break through the heat dissipation bottleneck of semiconductor power and radio frequency devices.

[0158] As an optional implementation, after the above step S90, the above method further includes:

[0159] Flattening and thinning the surface of the arrayed carbon-based semiconductor thin film material;

[0160] And the arrayed carbon-based semiconductor thin film material is subjected to high-temperature annealing treatment in a vacuum and protective atmosphere to enhance the interface strength of the arrayed carbon-based semiconductor thin film material.

[0161] Exemplarily, the surface of the arrayed carbon-based semiconductor film material is further thinned by gas ions, and defects such as holes generated by etching of the corrosive agent during the removal of the defect layer 400 on the surface of the arrayed carbon-based semiconductor film material are removed to achieve surface flatness.

[0162] The interface of the transferred arrayed carbon-based semiconductor thin film material is reinforced by long-term vacuuming in a high vacuum annealing furnace and high-temperature annealing under a protective atmosphere to meet the needs of subsequent device process preparation.

[0163] As an optional implementation manner, the conditions of the high temperature annealing treatment are: temperature 0 to 900° C., annealing time 4 min to 40 h.

[0164] The embodiment of the present application performs thinning and high-temperature annealing on the synthesized arrayed carbon-based semiconductor thin film material, thereby strengthening the interface between the semiconductor and the carbon-based substrate, further enhancing the heterostructure strength of the arrayed carbon-based semiconductor thin film material, and being applicable to a wider range of semiconductor heterostructure applications, further unleashing the application potential of semiconductor materials in power, radio frequency and other fields.

[0165] To sum up, the method for preparing an arrayed carbon-based semiconductor thin film material of the present invention first prepares a semiconductor film with a certain thickness (several hundred nanometers to several microns) and a semiconductor heterogeneous material of a sacrificial layer through ion beam stripping and transfer technology, and then releases the sacrificial layer. At the same time, a PVA glue suitable for transferring a large area of ​​arrayed semiconductor film is prepared. On this basis, the transfer technology is used to transfer the semiconductor film from the donor substrate to the required carbon-based acceptor substrate, which can realize the heterogeneous integration of semiconductors and carbon-based materials with excellent performance, and further release the application potential of semiconductor materials in power, radio frequency and other fields.

[0166] On the other hand, an embodiment of the present application further provides an arrayed carbon-based semiconductor thin film material, which is prepared by the above-mentioned method for preparing the arrayed carbon-based semiconductor thin film material.

[0167] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for preparing an arrayed carbon-based semiconductor thin film material, characterized in that: The preparation method comprises: Providing an ion-implanted semiconductor wafer and a supporting substrate having a sacrificial layer on the surface; Bonding the ion-implanted semiconductor wafer and the support substrate having a sacrificial layer on the surface thereof along the sacrificial layer to obtain a preset semiconductor heterogeneous material; the preset semiconductor heterogeneous material comprises, from top to bottom, a semiconductor thin film layer, the sacrificial layer and the support substrate; Etching the semiconductor thin film layer to form an arrayed pattern on the semiconductor thin film layer to obtain an arrayed semiconductor thin film layer; Etching the sacrificial layer to remove the sacrificial layer, thereby obtaining a semiconductor heterogeneous material including the arrayed semiconductor thin film layer and the supporting substrate; A target carbon-based substrate is provided, and the arrayed semiconductor thin film layer is transferred from the supporting substrate to the target carbon-based substrate by a transfer technique to obtain an arrayed carbon-based semiconductor thin film material.

2. The preparation method according to claim 1, characterized in that: The step of bonding the ion-implanted semiconductor wafer and the support substrate having a sacrificial layer on the surface thereof along the sacrificial layer to obtain a preset semiconductor heterogeneous material comprises: The ion-implanted semiconductor wafer and the support substrate having a sacrificial layer on the surface are bonded along the sacrificial layer to obtain a first bonding structure; the ion-implanted semiconductor wafer comprises a defect layer formed by ion implantation; Performing high temperature annealing and peeling on the first bonding structure, so that the first bonding structure is peeled along the defective layer to obtain a second bonding structure; The second bonding structure is thinned and planarized, and subjected to high-temperature annealing repair to obtain the preset semiconductor heterogeneous material.

3. The preparation method according to claim 1, characterized in that: The step of etching the sacrificial layer to remove the sacrificial layer and obtaining a semiconductor heterogeneous material including the arrayed semiconductor thin film layer and the supporting substrate comprises: Performing an etching process on the sacrificial layer to remove the sacrificial layer not covered by the arrayed semiconductor thin film layer; Preparing a photoresist anchoring structure on the surface of the arrayed semiconductor thin film layer to fix the arrayed semiconductor thin film layer; The sacrificial layer is subjected to a secondary etching process so that the sacrificial layer is completely removed to obtain the semiconductor heterogeneous material including the arrayed semiconductor thin film layer and the supporting substrate.

4. The preparation method according to claim 3, characterized in that: Before providing a target carbon-based substrate and transferring the arrayed semiconductor thin film layer from the support substrate to the target carbon-based substrate by a transfer technique to obtain an arrayed carbon-based semiconductor thin film material, the method further comprises: Preparing a polyvinyl alcohol solution of a preset concentration, and curing the polyvinyl alcohol solution of the preset concentration to obtain a current polyvinyl alcohol glue; Applying the polyvinyl alcohol solution of the preset concentration on the current polyvinyl alcohol glue, performing a curing process to obtain a new polyvinyl alcohol glue, and using the new polyvinyl alcohol film as the current polyvinyl alcohol glue again; Repeat the steps of applying the polyvinyl alcohol solution of the preset concentration on the single layer of the current polyvinyl alcohol glue, curing to obtain new polyvinyl alcohol glue, and using the new polyvinyl alcohol film as the current polyvinyl alcohol glue again until a polyvinyl alcohol glue of the preset thickness is obtained.

5. The preparation method according to claim 4, characterized in that: The method of providing a target carbon-based substrate and transferring the arrayed semiconductor thin film layer from the support substrate to the target carbon-based substrate by a transfer technique to obtain an arrayed carbon-based semiconductor thin film material comprises: Under a preset heating temperature and a preset heating time, the arrayed semiconductor thin film layer is subjected to a search process by using polydimethylsiloxane glue and the polyvinyl alcohol glue, so that the arrayed semiconductor thin film layer is separated from the supporting substrate layer, and the polyvinyl alcohol glue with the arrayed semiconductor thin film layer is obtained; And the arrayed semiconductor thin film layer is printed by the polydimethylsiloxane glue and the polyvinyl alcohol glue with the arrayed semiconductor thin film layer, so that the arrayed semiconductor thin film layer is transferred from the supporting substrate to the target carbon-based substrate to obtain the arrayed carbon-based semiconductor thin film material.

6. The preparation method according to claim 1, characterized in that: After providing a target carbon-based substrate, transferring the arrayed semiconductor thin film layer from the support substrate to the target carbon-based substrate by a transfer technique to obtain an arrayed carbon-based semiconductor thin film material, the method further includes: Flattening and thinning the surface of the arrayed carbon-based semiconductor thin film material; And the arrayed carbon-based semiconductor thin film material is subjected to high-temperature annealing treatment in a vacuum and protective atmosphere to enhance the interface strength of the arrayed carbon-based semiconductor thin film material.

7. The preparation method according to claim 2, characterized in that: The semiconductor wafer includes at least one of silicon, germanium, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, gallium nitride, gallium oxide, aluminum nitride, zinc oxide, and diamond; the target carbon-based substrate is a material system with carbon atoms as a skeleton; The thickness of the sacrificial layer is 1nm to 10 microns; the thickness of the semiconductor thin film layer is 0.1μm to 10μm, and the roughness is less than 0.5nm; the characteristic size of the arrayed semiconductor thin film layer is 1nm to 1mm; The conditions for the high temperature annealing stripping are: a temperature of 100° C. to 1000° C. and a time of 1 h to 100 h.

8. The preparation method according to claim 5, characterized in that: The preset concentration is 2% to 20%; the preset thickness is 0.05mm to 5mm; The preset heating temperature is 40-190° C.; the preset heating time is 0.5 min-10 min.

9. The preparation method according to claim 6, characterized in that: The conditions of the high temperature annealing treatment are: temperature 0-900° C., annealing time 4 min-40 h.

10. An arrayed carbon-based semiconductor thin film material, characterized in that: The method is prepared by the method for preparing an arrayed carbon-based semiconductor thin film material as described in any one of claims 1 to 9.

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