Overvoltage absorption circuit and method for nuclear power plant

Abstract

The embodiment of the invention provides an overvoltage absorption circuit, an overvoltage absorption method and an overvoltage absorption system for a nuclear power plant. The overvoltage absorption circuit and the overvoltage absorption method are applied to the scene of the FORSMARK effect of nuclear-grade electrical equipment. The circuit comprises an alternating current module, a rectifier module, a load module and a voltage absorption module, wherein the rectifier module comprises a silicon controlled rectifier (SCR); the voltage absorption module is connected in parallel with the output end of the rectifier module; the voltage absorption module comprises an insulated gate bipolar transistor (IGBT) module and a resistor which are connected in series; the circuit further comprises a control assembly connected with the rectification module and used for collecting voltage parameters of the output end. Under the condition that the value of the voltage parameter is increased to a first threshold value, a first control signal is sent to the voltage absorption module, so that the IGBT module is in a conducting state; under the condition that the value of the voltage parameter is reduced to a second threshold value, a second control signal is sent to the voltage absorption module, so that the IGBT module is in a turn-off state; the first threshold value is greater than the second threshold value.

Description

Technical Field

[0001] The present application relates to the field of electrical technology, and in particular to an overvoltage absorption circuit, method and overvoltage absorption system for a nuclear power plant. Background Art

[0002] For charger equipment used in nuclear power plants, the actual on-site use conditions have the input nuclear-grade electrical equipment (FORSMARK) effect, that is, when a fault occurs on the AC input side and a low voltage is generated, and the high voltage is restored after the fault is cleared, the output voltage of the charger should not exceed the protection voltage of the subsequent equipment to avoid equipment damage. For actual application scenarios, the specific requirements are that the input voltage of the charger equipment works at a low voltage of 80% for at least 5 seconds, and then jumps from 80% to 155% within a half-wave (10ms), and the maximum transient DC output voltage of the charger cannot exceed 276V of direct current (DC) to avoid shutdown of the subsequent inverter. When the FORSMARK effect occurs on the input side, the thyristor cannot be turned off in time because it is a semi-controlled device, and the input change time is fast, and it suddenly changes from 80% of the rated voltage to 155% within 10ms. At this time, the software-controlled thyristor conduction angle cannot meet the requirement of reducing the conduction angle under such a rapid change, so the output DC voltage will suddenly increase, and there is a risk of causing damage or protection to the subsequent load. Summary of the invention

[0003] In order to solve the existing technical problems, the embodiments of the present application provide an overvoltage absorption circuit, method and overvoltage absorption system for a nuclear power plant.

[0004] To achieve the above purpose, the technical solution of the embodiment of the present application is implemented as follows:

[0005] The embodiment of the present application provides an overvoltage absorption circuit for a nuclear power plant, which is applied to the scenario of FORSMARK effect of nuclear-grade electrical equipment; the circuit includes an AC module, a rectifier module, a load module and a voltage absorption module: the rectifier module includes a silicon controlled rectifier (Silicon Controlled Rectifier, SCR); the input end of the rectifier module is connected to the AC module; the output end of the rectifier module is connected to the load module; the voltage absorption module is connected in parallel to the output end of the rectifier module; the voltage absorption module includes an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) module and a resistor connected in series;

[0006] The circuit also includes a control component connected to the rectifier module, which is used to collect the voltage parameters of the output end; when the value of the voltage parameter increases to a first threshold, a first control signal is sent to the voltage absorption module to put the IGBT module in an on state; when the value of the voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in an off state; the first threshold is greater than the second threshold.

[0007] In the above scheme, the voltage parameter includes a first voltage parameter and a second voltage parameter; the control component includes at least a first control module and a second control module; the first control module is connected to the second control module; the rectifier module includes at least a first rectifier module and a second rectifier module connected in parallel; the first rectifier module is connected to the first control module; the second rectifier module is connected to the second control module;

[0008] The first control module is used to collect a first voltage parameter of the output terminal; when the value of the first voltage parameter increases to a first threshold value, send a first control signal to the voltage absorption module to turn on the IGBT module; when the value of the first voltage parameter decreases to a second threshold value, send a second control signal to the voltage absorption module to turn off the IGBT module;

[0009] The second control module is used to collect the second voltage parameter of the output end; when the value of the second voltage parameter increases to a first threshold value, a first control signal is sent to the voltage absorption module to put the IGBT module in an on state; when the value of the second voltage parameter drops to a second threshold value, a second control signal is sent to the voltage absorption module to put the IGBT module in an off state.

[0010] In the above solution, the first control module includes a first detection circuit and a first sampling circuit; the first detection circuit is connected to the first sampling circuit;

[0011] The first sampling circuit is used to collect a first voltage parameter of the output end;

[0012] The first detection circuit is used to send a first control signal to the voltage absorption module to put the IGBT module in an on state when the value of the first voltage parameter increases to a first threshold value; and to send a second control signal to the voltage absorption module to put the IGBT module in an off state when the value of the first voltage parameter drops to a second threshold value.

[0013] In the above solution, the second control module includes a second detection circuit and a second sampling circuit; the second detection circuit is connected to the second sampling circuit;

[0014] The second sampling circuit is used to collect a second voltage parameter of the output end;

[0015] The second detection circuit is used to send a first control signal to the voltage absorption module to put the IGBT module in an on state when the value of the second voltage parameter increases to a first threshold value; and send a second control signal to the voltage absorption module to put the IGBT module in an off state when the value of the second voltage parameter decreases to a second threshold value.

[0016] In the above solution, the number of IGBTs in the IGBT module is related to the power of the nuclear-grade electrical equipment.

[0017] In the above scheme, when the power of the core-level electrical equipment is greater than the third threshold, the number of the IGBTs is N, where N is a positive integer greater than 1; the N IGBTs are connected in parallel in the IGBT module.

[0018] In the above solution, when the power of the core-level electrical equipment is less than the fourth threshold, the number of the IGBT is one.

[0019] The present application provides a control method, which is applied to the overvoltage absorption circuit for the nuclear power plant described above; the method comprises:

[0020] Collecting voltage parameters at the output end of the rectifier module;

[0021] When the value of the voltage parameter increases to a first threshold value, sending a first control signal to the voltage absorption module to put the IGBT module in a conducting state;

[0022] When the value of the voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to turn off the IGBT module; and the first threshold is greater than the second threshold.

[0023] In the above solution, the voltage parameter includes at least a first voltage parameter; the method further includes:

[0024] Collecting a first voltage parameter of an output terminal of the integrated rectifier module;

[0025] When the value of the first voltage parameter increases to a first threshold value, sending a first control signal to the voltage absorption module to put the IGBT module into a conducting state;

[0026] When the value of the first voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in a turned-off state.

[0027] In the above solution, the voltage parameter includes at least a second voltage parameter; the method further includes:

[0028] Collecting a second voltage parameter of the output end of the integrated rectifier module;

[0029] When the value of the second voltage parameter increases to a first threshold value, sending a first control signal to the voltage absorption module to put the IGBT module into a conducting state;

[0030] When the value of the second voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in a turned-off state.

[0031] An embodiment of the present invention further provides an overvoltage absorption system, which includes any of the above-mentioned devices.

[0032] The present application also provides a computer program product, including a computer program, which implements any step of the above method when executed by a processor.

[0033] The present application also provides a storage medium on which a computer program is stored, and when the computer program is executed by a processor, any step of the above-mentioned method is implemented.

[0034] The embodiment of the present application provides an overvoltage absorption circuit, method and overvoltage absorption system for a nuclear power plant, wherein the circuit includes an AC module, a rectifier module, a load module and a voltage absorption module: the rectifier module includes a silicon-controlled rectifier SCR; the input end of the rectifier module is connected to the AC module; the output end of the rectifier module is connected to the load module; the voltage absorption module is connected in parallel to the output end of the rectifier module; the voltage absorption module includes an insulated gate bipolar transistor IGBT module and a resistor connected in series; the circuit also includes a control component connected to the rectifier module, which is used to collect the voltage parameter of the output end; when the value of the voltage parameter increases to a first threshold value, a first control signal is sent to the voltage absorption module to put the IGBT module in an on state; when the value of the voltage parameter drops to a second threshold value, a second control signal is sent to the voltage absorption module to put the IGBT module in an off state; the first threshold value is greater than the second threshold value. The technical solution of the embodiment of the present application is adopted, by adding a voltage absorption module, connected in parallel to the output end of the rectifier module; the voltage absorption module includes an insulated gate bipolar transistor IGBT module and a resistor connected in series; the circuit includes a control component connected to the rectifier module, which is used to collect the voltage parameter of the output end; when the value of the voltage parameter increases to a first threshold, a first control signal is sent to the voltage absorption module to put the IGBT module in a conducting state; when the value of the voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in a shut-off state; the first threshold is greater than the second threshold. That is, the IGBT module is a fully controlled device and its switching frequency is relatively fast, which can meet the requirements of the voltage absorption module for rapid response, will not cause a sudden increase in the output DC voltage, and will not cause the risk of damaging the subsequent load. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic diagram of the overall topology of the present application embodiment;

[0036] Figure 2 A schematic diagram of an overvoltage absorption circuit for a nuclear power plant provided in an embodiment of the present application;

[0037] Figure 3 Another schematic diagram of an overvoltage absorption circuit for a nuclear power plant provided in an embodiment of the present application;

[0038] Figure 4 Another purpose of an overvoltage absorption circuit for a nuclear power plant provided in an embodiment of the present application;

[0039] Figure 5 An application scenario intention of an overvoltage absorption circuit for a nuclear power plant provided in an embodiment of the present application;

[0040] Figure 6 The present invention is a flowchart of a control method according to an embodiment of the present invention. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the specific technical solution of the invention will be further described in detail below in conjunction with the drawings in the embodiments of the present application. The following embodiments are used to illustrate the present application, but are not used to limit the scope of the present application.

[0042] The charger equipment for nuclear power uses a dual six-pulse rectification topology. The two rectifier modules are connected in parallel for output and are controlled by a separate control board. Each module can operate independently, and the switching components are thyristors.

[0043] As a semi-controlled device, the thyristor can be controlled to turn on but not to turn off. It can only be turned on when the gate drive signal exists, but it will not be turned off immediately when the gate drive signal disappears. Instead, it can only be turned off when the current is a negative half-wave. Therefore, it is a semi-controlled component. Figure 1 As shown, Figure 1 It is a schematic diagram of the whole machine topology in the embodiment of the present application.

[0044] Based on this, an embodiment of the present application provides an overvoltage absorption circuit for a nuclear power plant. Figure 2 A schematic diagram of an overvoltage absorption circuit for a nuclear power plant provided in an embodiment of the present application; Figure 3 Another schematic diagram of an overvoltage absorption circuit for a nuclear power plant provided in an embodiment of the present application; Figure 4 Another purpose of the overvoltage absorption circuit for a nuclear power plant provided in the embodiment of the present application is as follows: Figure 2 , Figure 3 and Figure 4 To understand, it is applied to the scenario of FORSMARK effect of nuclear-grade electrical equipment; the circuit 200 includes an AC module 201, a rectifier module 202, a load module 203 and a voltage absorption module 204: the rectifier module 202 includes a silicon-controlled rectifier SCR; the input end of the rectifier module 202 is connected to the AC module 201; the output end of the rectifier module 202 is connected to the load module 203; the voltage absorption module 204 is connected in parallel to the output end of the rectifier module 202; the voltage absorption module 204 includes an insulated gate bipolar transistor IGBT module and a resistor connected in series;

[0045] The circuit 200 also includes a control component 205 connected to the rectifier module 202, which is used to collect the voltage parameters of the output end; when the value of the voltage parameter increases to a first threshold, a first control signal is sent to the voltage absorption module 204 to put the IGBT module in an on state; when the value of the voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in an off state; the first threshold is greater than the second threshold.

[0046] It should be noted that the AC module 201 can be determined according to actual conditions and is not limited here. As an example, the AC module 201 is used for AC input. In practical applications, the AC module 201 can be understood as a charger AC input.

[0047] The rectifier module 202 can be determined according to actual conditions, and is not limited here. As an example, the rectifier module 202 can include at least a first rectifier module and a second rectifier module connected in parallel. The first rectifier module and the second rectifier module can be determined according to actual conditions, and are not limited here. As an example, the first rectifier module can be a six-pulse rectifier module; the second rectifier module can be a six-pulse rectifier module; the first rectifier module can be recorded as rectifier module 1; the second rectifier module can be recorded as rectifier module 2.

[0048] The load module 203 can be determined according to actual conditions and is not limited here. As an example, the load module 203 can be understood as a post-stage load.

[0049] The voltage absorption module 204 can be determined according to actual conditions and is not limited here. As an example, the voltage absorption module 204 includes an IGBT module and a resistor connected in series. In practical applications, the voltage absorption module 204 can be simply referred to as an absorption module.

[0050] The control component 205 can be determined according to actual conditions and is not limited here. As an example, the control component 205 can include at least a first control module and a second control module. In practical applications, the first control module and the second control module can both be referred to as control panels.

[0051] The input end of the rectifier module 202 is connected to the AC module 201; the output end of the rectifier module 202 is connected to the load module 203; the connection can be determined according to the actual situation and is not limited here. As an example, the connection can be a wired connection or a wireless connection; wherein the wired connection can be a wire connection capable of transmitting data; the wireless connection can be a short-range communication technology, such as Bluetooth, Zigbee, etc.; or a long-range communication technology, such as (WiFi, Wireless Fidelity) connection.

[0052] The acquisition of the voltage parameter of the output terminal can be understood as the acquisition of the voltage parameter of the DC output of the output terminal. The voltage parameter can be determined according to actual conditions and is not limited here. As an example, the voltage parameter can include a first voltage parameter and a second voltage parameter. In practical applications, the acquisition of the voltage parameter of the output terminal can be understood as the acquisition of the voltage parameter of the output terminal by detecting the DC output voltage and feeding it back to the control board.

[0053] The first threshold is greater than the second threshold; wherein the first threshold and the second threshold can be determined according to actual conditions and are not limited here. As an example, the first threshold and the second threshold can be understood as a certain set value.

[0054] When the value of the voltage parameter increases to the first threshold, a first control signal is sent to the voltage absorption module 204 to put the IGBT module in a conducting state. This can be understood as sending a first control signal to the voltage absorption module 204 to put the IGBT module in a conducting state when the output voltage suddenly rises to a certain set value. In practical applications, by detecting the DC output voltage and feeding it back to the control board, when the output voltage suddenly rises to a certain set value, the control board sends a driving signal to the IGBT module of the absorption module to turn it on. At this time, the voltage will be absorbed by the resistor connected in parallel to the output to prevent the output voltage from suddenly rising to the protection value of the subsequent equipment.

[0055] When the value of the voltage parameter drops to the second threshold, a second control signal is sent to the voltage absorption module to turn off the IGBT module. This can be understood as sending a second control signal to the voltage absorption module to turn off the IGBT module when the output voltage drops to a certain set value. In actual applications, when the output voltage drops to a certain set value due to the absorption resistor, the control board turns off the drive signal, the IGBT module turns off, the absorption module loop is cut off, and the device outputs normally.

[0056] In the embodiment of the present application, a voltage absorption module is added and connected in parallel to the output end of the rectifier module; the voltage absorption module includes an insulated gate bipolar transistor IGBT module and a resistor connected in series; the circuit includes a control component connected to the rectifier module, which is used to collect the voltage parameter of the output end; when the value of the voltage parameter increases to a first threshold, a first control signal is sent to the voltage absorption module to put the IGBT module in a conducting state; when the value of the voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in a shut-off state; the first threshold is greater than the second threshold. That is, the IGBT module is a fully controlled device and its switching frequency is relatively fast, which can meet the requirements of the voltage absorption module for rapid response, and will not cause a sudden increase in the output DC voltage, and there will be no risk of damaging the subsequent load.

[0057] In an optional embodiment of the present application, the voltage parameter includes a first voltage parameter and a second voltage parameter; the control component 205 includes at least a first control module 2051 and a second control module 2052; the first control module 2051 is connected to the second control module 2052; the rectifier module 202 includes at least a first rectifier module 2021 and a second rectifier module 2022 connected in parallel; the first rectifier module 2021 is connected to the first control module 2051; the second rectifier module 2022 is connected to the second control module 2052;

[0058] The first control module 2051 is used to collect the first voltage parameter of the output terminal; when the value of the first voltage parameter increases to a first threshold value, send a first control signal to the voltage absorption module 204 to turn on the IGBT module; when the value of the first voltage parameter decreases to a second threshold value, send a second control signal to the voltage absorption module 204 to turn off the IGBT module;

[0059] The second control module 2052 is used to collect the second voltage parameter of the output end; when the value of the second voltage parameter increases to a first threshold value, a first control signal is sent to the voltage absorption module 204 to put the IGBT module in an on state; when the value of the second voltage parameter drops to a second threshold value, a second control signal is sent to the voltage absorption module 204 to put the IGBT module in an off state.

[0060] It should be noted that the first voltage parameter and the second voltage parameter can be determined according to actual conditions and are not limited here. As an example, the first voltage parameter and the second voltage parameter can both be understood as the DC output voltage of the rectifier module 202.

[0061] The first control module 2051 and the second control module 2052 can be determined according to actual conditions and are not limited here. As an example, the first control module 2051 can be a control board; the second control module 2052 can be a control board. In actual applications, the first control module 2051 can be recorded as control board 1; the second control module 2052 can be recorded as control board 2.

[0062] The acquisition of the first voltage parameter of the output terminal can be understood as the acquisition of the first voltage parameter of the DC output of the output terminal. In practical applications, the acquisition of the first voltage parameter of the output terminal can be understood as the detection of the DC output voltage and feedback to the control board, thereby acquiring the first voltage parameter of the output terminal.

[0063] The first threshold and the second threshold can be determined according to actual conditions and are not limited here. As an example, the first threshold and the second threshold can be understood as a certain set value.

[0064] When the value of the first voltage parameter increases to the first threshold value, a first control signal is sent to the voltage absorption module 204 to put the IGBT module in a conducting state. This can be understood as sending a first control signal to the voltage absorption module 204 to put the IGBT module in a conducting state when the output voltage suddenly rises to a certain set value. In practical applications, by detecting the DC output voltage and feeding it back to the control board, when the output voltage suddenly rises to a certain set value, the control board sends a driving signal to the IGBT module of the absorption module to turn it on. At this time, the voltage will be absorbed by the resistor connected in parallel to the output to prevent the output voltage from suddenly rising to the protection value of the subsequent equipment.

[0065] When the value of the first voltage parameter drops to the second threshold, sending a second control signal to the voltage absorption module to turn off the IGBT module can be understood as sending a second control signal to the voltage absorption module to turn off the IGBT module when the output voltage drops to a certain set value. In practical applications, when the output voltage drops to a certain set value due to the absorption resistor, the control board turns off the drive signal, the IGBT module turns off, the absorption module loop is cut off, and the device outputs normally.

[0066] The acquisition of the second voltage parameter of the output terminal can be understood as the acquisition of the second voltage parameter of the DC output of the output terminal. In practical applications, the acquisition of the second voltage parameter of the output terminal can be understood as the detection of the DC output voltage and feedback to the control board, thereby acquiring the first voltage parameter of the output terminal.

[0067] When the value of the second voltage parameter increases to the first threshold value, a first control signal is sent to the voltage absorption module 204 to put the IGBT module in a conducting state. This can be understood as sending a first control signal to the voltage absorption module 204 to put the IGBT module in a conducting state when the output voltage suddenly rises to a certain set value. In practical applications, by detecting the DC output voltage and feeding it back to the control board, when the output voltage suddenly rises to a certain set value, the control board sends a driving signal to the IGBT module of the absorption module to turn it on. At this time, the voltage will be absorbed by the resistor connected in parallel to the output to prevent the output voltage from suddenly rising to the protection value of the subsequent equipment.

[0068] When the value of the second voltage parameter drops to the second threshold, sending a second control signal to the voltage absorption module to turn off the IGBT module can be understood as sending a second control signal to the voltage absorption module to turn off the IGBT module when the output voltage drops to a certain set value. In practical applications, when the output voltage drops to a certain set value due to the absorption resistor, the control board turns off the drive signal, the IGBT module turns off, the absorption module loop is cut off, and the device outputs normally.

[0069] In an optional embodiment of the present application, the first control module 2051 includes a first detection circuit 20512 and a first sampling circuit 20511; the first detection circuit 20512 is connected to the first sampling circuit 20511;

[0070] The first sampling circuit 20511 is used to collect a first voltage parameter of the output end;

[0071] The first detection circuit 20512 is used to send a first control signal to the voltage absorption module 204 to put the IGBT module in an on state when the value of the first voltage parameter increases to a first threshold value; and to send a second control signal to the voltage absorption module 204 to put the IGBT module in an off state when the value of the first voltage parameter decreases to a second threshold value.

[0072] It should be noted that the first sampling circuit 20511 can be determined according to actual conditions and is not limited here. In practical applications, the first sampling circuit 20511 is referred to as a sampling circuit.

[0073] The first detection circuit 20512 is connected to the first sampling circuit 20511; the connection can be determined according to actual conditions and is not limited here. As an example, the connection can be a wired connection or a wireless connection; wherein the wired connection can be a wire connection capable of transmitting data; the wireless connection can be a short-distance communication technology, such as Bluetooth, Zigbee, etc.; or a long-distance communication technology, such as WiFi connection.

[0074] The first detection circuit 20512 can be determined according to actual conditions and is not limited here. As an example, the first detection circuit 20512 can include a digital signal processor (Digital Signal Processing, DSP).

[0075] The first control signal can be determined according to actual conditions and is not limited here. As an example, the first control signal can be a pulse signal; in actual applications, the first control signal sent to the voltage absorption module 204 can be a pulse signal to a high level sent to the voltage absorption module 204 using DSP.

[0076] The second control signal can be determined according to actual conditions and is not limited here. As an example, the second control signal can be a pulse signal; in actual applications, the second control signal sent to the voltage absorption module 204 can be a pulse signal to a low level sent to the voltage absorption module 204 using DSP.

[0077] In an optional embodiment of the present application, the second control module 2052 includes a second detection circuit 20522 and a second sampling circuit 20521; the second detection circuit 20522 is connected to the second sampling circuit 20521;

[0078] The second sampling circuit 20521 is used to collect a second voltage parameter of the output end;

[0079] The second detection circuit 20522 is used to send a first control signal to the voltage absorption module 204 to put the IGBT module in an on state when the value of the second voltage parameter increases to a first threshold value; and send a second control signal to the voltage absorption module 204 to put the IGBT module in an off state when the value of the second voltage parameter decreases to a second threshold value.

[0080] It should be noted that the second sampling circuit 20521 can be determined according to actual conditions and is not limited here. In practical applications, the second sampling circuit 20521 can be referred to as a sampling circuit.

[0081] The second detection circuit 20522 is connected to the second sampling circuit 20521; the connection can be determined according to actual conditions and is not limited here. As an example, the connection can be a wired connection or a wireless connection; wherein the wired connection can be a wire connection capable of transmitting data; the wireless connection can be a short-distance communication technology, such as Bluetooth, Zigbee, etc.; or a long-distance communication technology, such as WiFi connection.

[0082] The second detection circuit 20522 can be determined according to actual conditions and is not limited here. As an example, the second detection circuit 20522 can include a DSP.

[0083] The first control signal can be determined according to actual conditions and is not limited here. As an example, the first control signal can be a pulse signal; in actual applications, the first control signal sent to the voltage absorption module 204 can be a pulse signal to a high level sent to the voltage absorption module 204 using DSP.

[0084] The second control signal can be determined according to actual conditions and is not limited here. As an example, the second control signal can be a pulse signal; in actual applications, the second control signal sent to the voltage absorption module 204 can be a pulse signal to a low level sent to the voltage absorption module 204 using DSP.

[0085] In an optional embodiment of the present application, the number of IGBTs in the IGBT module is related to the power of the nuclear-grade electrical equipment.

[0086] In this embodiment, the number of IGBTs in the IGBT module is related to the power of the core-level electrical equipment; wherein the specific number of IGBTs in the IGBT module can be determined according to actual conditions and is not limited here. As an example, the greater the power of the core-level electrical equipment, the greater the number of IGBTs in the IGBT module; the smaller the power of the core-level electrical equipment, the smaller the number of IGBTs in the IGBT module.

[0087] In an optional embodiment of the present application, when the power of the core-level electrical equipment is greater than a third threshold, the number of the IGBTs is N, where N is a positive integer greater than 1; and the N IGBTs are connected in parallel in the IGBT module.

[0088] In this embodiment, the third threshold value may be determined according to actual conditions and is not limited here. As an example, the third threshold value may be a set value of power.

[0089] When the power of the nuclear-grade electrical equipment is greater than the third threshold, it can be understood that the power of the nuclear-grade electrical equipment is relatively large.

[0090] The number of the IGBTs is N, where N is a positive integer greater than 1; N can be 2, 3, 4, ...

[0091] The specific number of the N IGBTs connected in parallel and the number of N in the IGBT module can be determined according to actual conditions and is not limited here. As an example, the N can be 3 or 4.

[0092] In an optional embodiment of the present application, when the power of the core-level electrical equipment is less than a fourth threshold, the number of the IGBT is one.

[0093] In this embodiment, the fourth threshold value may be determined according to actual conditions and is not limited here. As an example, the fourth threshold value may be a set value of power.

[0094] When the power of the nuclear-grade electrical equipment is less than the fourth threshold, it can be understood that the power of the nuclear-grade electrical equipment is relatively small.

[0095] For ease of understanding, here is an example of an overvoltage absorption circuit used in a nuclear power plant. Figure 5 To understand. Figure 5 An application scenario intention of an overvoltage absorption circuit for a nuclear power plant provided in an embodiment of the present application; the charger has an AC input, which is output in parallel after passing through two six-pulse rectifier modules, and the subsequent DC load is a battery or an inverter. An absorption module is connected in parallel on the output side, which includes an IGBT module and an absorption resistor.

[0096] The specific phenomenon is that when the FORSMARK effect occurs on the input side, the thyristor cannot be turned off in time because it is a semi-controlled device, and the input changes quickly, changing from 80% to 155% of the rated voltage within 10ms. At this time, the software-controlled thyristor conduction angle cannot meet the requirement of reducing the conduction angle under such a rapid change, so it will cause a sudden increase in the output DC voltage, and there is a risk of damaging or protecting the subsequent load.

[0097] This solution detects the DC output voltage and feeds it back to the control board. When the output voltage suddenly rises to a certain set value, the control board sends a drive signal to the IGBT module of the absorption module to turn it on. At this time, the voltage will be absorbed by the resistor connected in parallel to the output to prevent the output voltage from suddenly rising to the protection value of the subsequent equipment. When the output voltage drops to a certain set value due to the absorption resistor, the control board turns off the drive signal, the IGBT module turns off, the absorption module circuit is cut off, and the device outputs normally. IGBT is a fully controlled device with a fast switching frequency, which can meet the requirements of the absorption module for rapid response.

[0098] The overvoltage absorption circuit for a nuclear power plant provided in the embodiment of the present application can use this method to effectively protect the subsequent equipment when the equipment is used in the above-mentioned working conditions, thereby protecting the subsequent load from damage or shutdown to the greatest extent.

[0099] Based on the above-mentioned overvoltage absorption circuit 200 for a nuclear power plant, the present application also provides a control method, which is applied to the above-mentioned overvoltage absorption circuit 200 for a nuclear power plant. Figure 6 This is a schematic diagram of a control method implementation flow of the present application embodiment, such as Figure 6 As shown, the method includes:

[0100] Step S601, collecting voltage parameters at the output end of the rectifier module.

[0101] Step S602: When the value of the voltage parameter increases to a first threshold, a first control signal is sent to the voltage absorption module to put the IGBT module in a conducting state.

[0102] Step S603, when the value of the voltage parameter drops to a second threshold, sending a second control signal to the voltage absorption module to turn off the IGBT module; the first threshold is greater than the second threshold.

[0103] It should be noted that the overvoltage absorption circuit 200 for the nuclear power plant is described above and will not be described again here.

[0104] In step S601, the voltage parameter of the output end of the rectifier module can be understood as the voltage parameter of the DC output of the output end. The voltage parameter can be determined according to the actual situation and is not limited here. As an example, the voltage parameter may include a first voltage parameter and a second voltage parameter. In practical applications, the voltage parameter of the output end can be understood as the voltage parameter of the output end is collected by detecting the DC output voltage and feeding it back to the control board.

[0105] In step S602, when the value of the voltage parameter increases to the first threshold value, a first control signal is sent to the voltage absorption module to put the IGBT module in a conducting state. It can be understood that when the output voltage suddenly rises to a certain set value, a first control signal is sent to the voltage absorption module to put the IGBT module in a conducting state. In practical applications, by detecting the DC output voltage and feeding it back to the control board, when the output voltage suddenly rises to a certain set value, the control board sends a driving signal to the IGBT module of the absorption module to turn it on. At this time, the voltage will be absorbed by the resistor connected in parallel to the output to prevent the output voltage from suddenly rising to the protection value of the subsequent equipment.

[0106] In step S603, the first threshold is greater than the second threshold; wherein the first threshold and the second threshold can be determined according to actual conditions and are not limited here. As an example, the first threshold and the second threshold can be understood as a certain set value.

[0107] When the value of the voltage parameter drops to the second threshold, a second control signal is sent to the voltage absorption module to turn off the IGBT module. This can be understood as sending a second control signal to the voltage absorption module to turn off the IGBT module when the output voltage drops to a certain set value. In actual applications, when the output voltage drops to a certain set value due to the absorption resistor, the control board turns off the drive signal, the IGBT module turns off, the absorption module loop is cut off, and the device outputs normally.

[0108] In the embodiment of the present application, the voltage parameter of the output terminal is collected; when the value of the voltage parameter increases to a first threshold, a first control signal is sent to the voltage absorption module to turn on the IGBT module; when the value of the voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to turn off the IGBT module; the first threshold is greater than the second threshold. That is, the IGBT module is a fully controlled device and its switching frequency is relatively fast, which can meet the requirement of the voltage absorption module for rapid response, and will not cause a sudden increase in the output DC voltage, and there will be no risk of damaging the subsequent load.

[0109] In an optional embodiment of the present application, the voltage parameter includes at least a first voltage parameter; the method further includes:

[0110] Collecting a first voltage parameter of an output terminal of the integrated rectifier module;

[0111] When the value of the first voltage parameter increases to a first threshold value, sending a first control signal to the voltage absorption module to put the IGBT module into a conducting state;

[0112] When the value of the first voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in a turned-off state.

[0113] It should be noted that the acquisition of the first voltage parameter of the output end of the integrated rectifier module can be understood as the acquisition of the first voltage parameter of the DC output of the output end. In practical applications, the acquisition of the first voltage parameter of the output end can be understood as the detection of the DC output voltage and the feedback to the control board, thereby acquiring the first voltage parameter of the output end.

[0114] When the value of the first voltage parameter increases to the first threshold, a first control signal is sent to the voltage absorption module to put the IGBT module in a conducting state. This can be understood as sending a first control signal to the voltage absorption module to put the IGBT module in a conducting state when the output voltage suddenly rises to a certain set value. In practical applications, by detecting the DC output voltage and feeding it back to the control board, when the output voltage suddenly rises to a certain set value, the control board sends a driving signal to the IGBT module of the absorption module to turn it on. At this time, the voltage will be absorbed by the resistor connected in parallel to the output to prevent the output voltage from suddenly rising to the protection value of the subsequent equipment.

[0115] When the value of the first voltage parameter drops to the second threshold, sending a second control signal to the voltage absorption module to turn off the IGBT module can be understood as sending a second control signal to the voltage absorption module to turn off the IGBT module when the output voltage drops to a certain set value. In practical applications, when the output voltage drops to a certain set value due to the absorption resistor, the control board turns off the drive signal, the IGBT module turns off, the absorption module loop is cut off, and the device outputs normally.

[0116] In an optional embodiment of the present application, the voltage parameter includes at least a second voltage parameter; the method further includes:

[0117] Collecting a second voltage parameter of the output end of the integrated rectifier module;

[0118] When the value of the second voltage parameter increases to a first threshold value, sending a first control signal to the voltage absorption module to put the IGBT module into a conducting state;

[0119] When the value of the second voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in a turned-off state.

[0120] In this embodiment, the acquisition of the second voltage parameter of the output terminal can be understood as the acquisition of the second voltage parameter of the DC output of the output terminal. In practical applications, the acquisition of the second voltage parameter of the output terminal can be understood as the detection of the DC output voltage and feedback to the control board, thereby acquiring the first voltage parameter of the output terminal.

[0121] When the value of the second voltage parameter increases to the first threshold, a first control signal is sent to the voltage absorption module to put the IGBT module in a conducting state. This can be understood as sending a first control signal to the voltage absorption module to put the IGBT module in a conducting state when the output voltage suddenly rises to a certain set value. In practical applications, by detecting the DC output voltage and feeding it back to the control board, when the output voltage suddenly rises to a certain set value, the control board sends a driving signal to the IGBT module of the absorption module to turn it on. At this time, the voltage will be absorbed by the resistor connected in parallel to the output to prevent the output voltage from suddenly rising to the protection value of the subsequent equipment.

[0122] When the value of the second voltage parameter drops to the second threshold, sending a second control signal to the voltage absorption module to turn off the IGBT module can be understood as sending a second control signal to the voltage absorption module to turn off the IGBT module when the output voltage drops to a certain set value. In practical applications, when the output voltage drops to a certain set value due to the absorption resistor, the control board turns off the drive signal, the IGBT module turns off, the absorption module loop is cut off, and the device outputs normally.

[0123] The detailed process of the control method of the present application can be understood in conjunction with the overvoltage absorption circuit used in the nuclear power plant mentioned above, and will not be repeated here.

[0124] An embodiment of the present invention further provides an overvoltage absorption system, which includes any of the above-mentioned devices.

[0125] An embodiment of the present invention further provides a computer program product, including a computer program, and when the computer program is executed by a processor, the steps of the above method embodiment are implemented.

[0126] An embodiment of the present application also provides a computer-readable medium having a computer program stored thereon. When the computer program is executed by a processor, the steps of the above-mentioned method embodiment are implemented. The aforementioned storage medium includes: a mobile storage device, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and other media that can store program codes.

[0127] If the method steps in the above-mentioned system of the embodiment of the present application are implemented in the form of software function modules and sold or used as independent products, they can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiment of the present application can essentially or in other words, the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product is stored in a storage medium. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a magnetic disk or an optical disk. In this way, the embodiment of the present application is not limited to any specific combination of hardware and software.

[0128] A person skilled in the art can understand that: all or part of the steps of implementing the above method embodiment can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps of the above method embodiment; and the aforementioned storage medium includes: mobile storage devices, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), disks or optical disks, etc. Various media that can store program codes.

[0129] The method disclosed in the above-mentioned embodiment of the present application can be applied to a processor or implemented by a processor. The processor may be an integrated circuit chip with signal processing capabilities. In combination with the steps of the method disclosed in the embodiment of the present application, it can be directly embodied as a hardware decoding processor to be executed, or a combination of hardware and software modules in the decoding processor to be executed. The software module can be located in a storage medium, which is located in a memory, and the processor reads the information in the memory and completes the steps of the aforementioned method in combination with its hardware.

[0130] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. An overvoltage absorption circuit for a nuclear power plant, characterized in that: Applicable to the scenario of FORSMARK effect of nuclear-grade electrical equipment; the circuit includes an AC module, a rectifier module, a load module and a voltage absorption module: the rectifier module includes a silicon-controlled rectifier SCR; the input end of the rectifier module is connected to the AC module; the output end of the rectifier module is connected to the load module; the voltage absorption module is connected in parallel to the output end of the rectifier module; the voltage absorption module includes an insulated gate bipolar transistor IGBT module and a resistor connected in series; The circuit also includes a control component connected to the rectifier module, which is used to collect the voltage parameters of the output end; when the value of the voltage parameter increases to a first threshold, a first control signal is sent to the voltage absorption module to put the IGBT module in an on state; when the value of the voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in an off state; the first threshold is greater than the second threshold.

2. The circuit according to claim 1, characterized in that The voltage parameter includes a first voltage parameter and a second voltage parameter; the control component includes at least a first control module and a second control module; the first control module is connected to the second control module; the rectifier module includes at least a first rectifier module and a second rectifier module connected in parallel; the first rectifier module is connected to the first control module; the second rectifier module is connected to the second control module; The first control module is used to collect a first voltage parameter of the output terminal; when the value of the first voltage parameter increases to a first threshold value, send a first control signal to the voltage absorption module to turn on the IGBT module; when the value of the first voltage parameter decreases to a second threshold value, send a second control signal to the voltage absorption module to turn off the IGBT module; The second control module is used to collect the second voltage parameter of the output end; when the value of the second voltage parameter increases to a first threshold value, a first control signal is sent to the voltage absorption module to put the IGBT module in an on state; when the value of the second voltage parameter drops to a second threshold value, a second control signal is sent to the voltage absorption module to put the IGBT module in an off state.

3. The circuit according to claim 2, characterized in that The first control module includes a first detection circuit and a first sampling circuit; the first detection circuit is connected to the first sampling circuit; The first sampling circuit is used to collect a first voltage parameter of the output end; The first detection circuit is used to send a first control signal to the voltage absorption module to put the IGBT module in an on state when the value of the first voltage parameter increases to a first threshold value; and to send a second control signal to the voltage absorption module to put the IGBT module in an off state when the value of the first voltage parameter drops to a second threshold value.

4. The circuit according to claim 2, characterized in that The second control module includes a second detection circuit and a second sampling circuit; the second detection circuit is connected to the second sampling circuit; The second sampling circuit is used to collect a second voltage parameter of the output end; The second detection circuit is used to send a first control signal to the voltage absorption module to put the IGBT module in an on state when the value of the second voltage parameter increases to a first threshold value; and send a second control signal to the voltage absorption module to put the IGBT module in an off state when the value of the second voltage parameter decreases to a second threshold value.

5. The circuit according to claim 1, characterized in that The number of IGBTs in the IGBT module is related to the power of the nuclear-grade electrical equipment.

6. The circuit according to claim 5, characterized in that When the power of the core-level electrical equipment is greater than a third threshold, the number of the IGBTs is N, where N is a positive integer greater than 1; the N IGBTs are connected in parallel in the IGBT module.

7. The circuit according to claim 5, characterized in that When the power of the core-level electrical equipment is less than a fourth threshold, the number of the IGBT is one.

8. A control method, characterized in that: The method is applied to the output overvoltage absorption based on FORSMARK effect as described in any one of claims 1 to 7; the method comprises: Collecting voltage parameters at the output end of the rectifier module; When the value of the voltage parameter increases to a first threshold value, sending a first control signal to the voltage absorption module to put the IGBT module in a conducting state; When the value of the voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to turn off the IGBT module; and the first threshold is greater than the second threshold.

9. The method according to claim 8, characterized in that The voltage parameter includes at least a first voltage parameter; the method further includes: Collecting a first voltage parameter of an output terminal of the integrated rectifier module; When the value of the first voltage parameter increases to a first threshold value, sending a first control signal to the voltage absorption module to put the IGBT module into a conducting state; When the value of the first voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in a turned-off state.

10. The method according to claim 8, characterized in that The voltage parameter includes at least a second voltage parameter; the method further includes: Collecting a second voltage parameter of the output end of the integrated rectifier module; When the value of the second voltage parameter increases to a first threshold value, sending a first control signal to the voltage absorption module to put the IGBT module into a conducting state; When the value of the second voltage parameter drops to a second threshold, a second control signal is sent to the voltage absorption module to put the IGBT module in a turned-off state.

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