Radio frequency power amplifier circuit

Abstract

The invention relates to a radio frequency power amplifier circuit which comprises a first impedance matching network, a field effect transistor M1 and a second impedance matching network. The first impedance matching network, the field effect transistor M1 and the second impedance matching network are connected in sequence, the output end of the first impedance matching network is used as the output end of the radio frequency power amplifier circuit, and the working bandwidth corresponding to a target power signal output by the output end is within a preset bandwidth range; the working voltage corresponding to the target power signal is obtained based on the corrected impedance space corresponding to the radio frequency power amplifier circuit in the resistance-reactance mixed continuous mode. The circuit can ensure that the impedance change ratio is not increased, and the impedance space of the radio frequency power amplifier circuit is widened, so that the working bandwidth of the radio frequency power amplifier circuit is widened, and the power amplification efficiency of the radio frequency power amplifier circuit is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of radio frequency integrated circuits, and in particular relates to a radio frequency power amplifier circuit. Background Art

[0002] With the development of communication application fields, various systems have also put forward new requirements for the performance of T / R components. T / R components are the abbreviation of Transmitter and Receiver. Generally speaking, they refer to the part between the video and the antenna in a wireless transceiver system. That is, one end of the T / R component is connected to the antenna, and the other end is connected to the intermediate frequency processing unit to form a wireless transceiver system. Its function is to amplify, phase shift, and attenuate the signal. As a functional unit in the T / R component, the RF power amplifier converts DC power into a certain RF power output. The larger the working bandwidth of the RF power amplifier, the better its working performance. The working bandwidth of the RF power amplifier refers to the frequency range in which the amplifier can transmit signals. This range directly affects the amount of information that the system can transmit. In wireless communication, the size of the bandwidth is a very important indicator because it determines the capacity and performance of the communication system. The bandwidth of the RF power amplifier is defined as the circuit meets a specific maximum and minimum value. This range is the frequency interval in which the amplifier can provide effective gain.

[0003] However, with the development of communication technology, the operating bandwidth of existing RF power amplifiers can no longer meet the requirements of different applications. Summary of the invention

[0004] In order to solve the above problems existing in the prior art, the present invention provides a radio frequency power amplifier circuit. The technical problem to be solved by the present invention is achieved by the following technical solutions:

[0005] The present invention provides a radio frequency power amplifier circuit, comprising: a first impedance matching network, a field effect transistor M1, and a second impedance matching network; the first impedance matching network, the field effect transistor M1, and the second impedance matching network are connected in sequence, the output end of the first impedance matching network is used as the output end of the radio frequency power amplifier circuit, and the input end of the second impedance matching network is used to receive an input first power signal; the second impedance matching network is used to match the impedance between the field effect transistor M1 and the input end of the second impedance matching network, so as to output a second power signal using the first power signal; the field effect transistor M1 is used to amplify the second power signal to obtain a third power signal; the first impedance matching network is used to match the impedance between the field effect transistor M1 and the output end of the first impedance matching network, so as to output a target power signal using the third power signal, the working bandwidth corresponding to the target power signal is within a preset bandwidth range, and the working voltage corresponding to the target power signal is obtained based on the impedance space corresponding to the radio frequency power amplifier circuit in a modified resistive mixed continuous mode.

[0006] Compared with the prior art, the present invention has the following beneficial effects: In view of the problem that the working bandwidth of the existing RF power amplifier cannot meet the requirements of different applications, the present invention provides a RF power amplifier circuit, which operates in a modified resistive mixed continuous mode, and the working bandwidth corresponding to the target power signal finally outputted is within a preset bandwidth range, which can meet different application requirements and improve the power amplification efficiency of the RF power amplifier circuit. Moreover, when the RF power amplifier circuit provided by the present invention is applied to a system containing a large number of T / R components, the improvement of the power amplification efficiency of the RF power amplifier circuit can further effectively reduce the power consumption of the T / R components, improve the heat dissipation of the T / R components, improve the working reliability of the T / R components, and finally reduce the power consumption of the entire system and strengthen the thermal management of the entire system. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a circuit connection diagram of a radio frequency power amplifier circuit provided in an embodiment of the present invention;

[0008] Figure 2 is the output power P corresponding to the RF power amplifier circuit in the modified continuous class F mode provided by the embodiment of the present invention out , the simulation example diagram of the drain efficiency η following the changes of the auxiliary factor λ and the resistance factor δ respectively;

[0009] Figure 31 is a simulation example diagram of the change of the real part of the fundamental frequency impedance Z1L with the auxiliary factor λ in the continuous class F mode corrected by the auxiliary factor λ and the continuous class J mode corrected by the auxiliary factor λ provided by the embodiment of the present invention;

[0010] Figure 4 It is a schematic diagram of the specific composition and connection relationship of the radio frequency power amplifier circuit provided by an embodiment of the present invention;

[0011] Figure 5 is another schematic diagram of the specific composition and connection relationship of the radio frequency power amplifier circuit provided by an embodiment of the present invention;

[0012] Figure 6 This is an example diagram comparing the working efficiency of the RF power amplifier circuit provided by an embodiment of the present invention and the simulation test of the working bandwidth expansion. DETAILED DESCRIPTION

[0013] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0014] In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0015] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.

[0016] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0017] The radio frequency power amplifier circuit proposed in the present invention is now described in detail with reference to the accompanying drawings. Figure 1 FIG. 1 is a circuit connection diagram of a radio frequency power amplifier circuit provided by an embodiment of the present invention. Figure 1 As shown, the RF power amplifier circuit includes: a first impedance matching network, a field effect transistor M1, and a second impedance matching network; the first impedance matching network, the field effect transistor M1, and the second impedance matching network are connected in sequence, the output end of the first impedance matching network is used as the output end of the RF power amplifier circuit, and the input end of the second impedance matching network is used to receive the input first power signal; the second impedance matching network is used to match the impedance between the field effect transistor M1 and the input end of the second impedance matching network, so as to output the second power signal using the first power signal; the field effect transistor M1 is used to amplify the second power signal to obtain a third power signal; the first impedance matching network is used to match the impedance between the field effect transistor M1 and the output end of the first impedance matching network, so as to output the target power signal using the third power signal, the working bandwidth corresponding to the target power signal is within the preset bandwidth range, and the working voltage corresponding to the target power signal is obtained based on the impedance space corresponding to the RF power amplifier circuit in the modified resistive hybrid continuous mode.

[0018] Here, the modified resistive-reactive hybrid continuous mode is generated by introducing auxiliary factors on the basis of the original resistive-reactive hybrid continuous mode. The original resistive-reactive hybrid continuous mode has the advantage of containing more impedance solutions without changing the output power and efficiency of the power amplifier. The original resistive-reactive hybrid continuous mode refers to a mode in which a reactance factor (1+γsinθ) and a resistance factor (1+δcosθ) are added to the output voltage waveform of the B / J class to F class transistors in the RF power amplifier. The output voltage waveform of the RF power amplifier in the original resistive-reactive hybrid continuous mode satisfies the following formula:

[0019] V ds,RRHC =V dd(1-acos(θ)+bcos(3θ))(1-γsin(θ))(1+δcos(θ));

[0020] Among them, V ds,RRHC Refers to the drain voltage of B / J to F class transistors, V dd is the drain voltage amplitude, a and b are the coefficients of the mixed continuous mode voltage waveform (where a=0, b=1 can get the voltage waveform expression of the continuous B / J class power amplifier; when a=2 / √3, b=1 / 3√3, the drain voltage waveform of the continuous class F working mode is obtained), γ refers to the reactance factor, δ refers to the resistance factor, and θ refers to the phase angle of the current waveform.

[0021] Here, when the output terminal Ropt of the final transistor of the RF power amplifier circuit is small, it is difficult to successfully apply the original resistance-reactance hybrid continuous mode. To solve this problem, the present invention introduces an auxiliary factor λ on the basis of the resistance-reactance hybrid continuous mode to correct it. The output voltage waveform of the RF power amplifier circuit in the corrected resistance-reactance hybrid continuous mode satisfies the following formula:

[0022] V ds =(1-acos(θ)+bcos(3θ))(1-γsin(θ))(λ+δcos(θ));

[0023] Among them, V ds It refers to the normalized drain voltage corresponding to the B / J to F class transistors in the RF power amplifier circuit under the modified resistive hybrid continuous mode, that is, the operating voltage corresponding to the target power signal, and λ refers to the auxiliary factor.

[0024] Among them, the value range of γ is (-1,1), the value range of δ is (0,1), and the value range of a and b satisfies: ab=1;

[0025] Here, the normalized drain current I corresponding to the B / J to F class transistors in the RF power amplifier circuit in the modified resistive hybrid continuous mode is ds Keep half sine wave and normalize drain current I ds It can be expressed as:

[0026] Here, in the modified resistive hybrid continuous mode, the output power P corresponding to the B / J to F class transistors in the RF power amplifier circuit is out It can be expressed as: The drain efficiency η corresponding to B / J class to F class transistors can be expressed as:

[0027] Here, the impedance space corresponding to the RF power amplifier circuit includes: fundamental frequency impedance Z1L, second harmonic impedance Z2L and third harmonic impedance Z3L. The fundamental frequency impedance Z1L, second harmonic impedance Z2L and third harmonic impedance Z3L are respectively expressed as follows:

[0028]

[0029]

[0030] Z3L=∞;

[0031] Where j refers to a complex number, R 1,TL Refers to the optimum load impedance.

[0032] To determine the value of the auxiliary factor λ, Figure 2 is the output power P corresponding to the RF power amplifier circuit in the modified continuous class F mode provided by the embodiment of the present invention out , and the drain efficiency η follow the changes of the auxiliary factor λ and the resistance factor δ respectively. Figure 2 (a) is the output power P corresponding to the RF power amplifier circuit in the modified continuous class F mode out Simulation example diagram following the changes of auxiliary factor λ and resistance factor δ; Figure 2 (b) is a simulation example diagram of the drain efficiency η corresponding to the RF power amplifier circuit in the modified continuous class F mode following the change of the auxiliary factor λ and the resistance factor δ. Figure 2 As shown in (a) and (b) in Figure 2, when the auxiliary factor λ is less than (1+δ / a), the output power P out The change in the amount of decrease is reduced. When the auxiliary factor λ is greater than (1+δ / a), the output power P out The increase in the change in can compensate for the reduction in output power caused by δ≠0. Considering that at high frequencies, the parasitic effects of the matching network components are serious and cannot maintain pure reactance at high harmonics, in order to reduce the difficulty of designing the second harmonic impedance matching network and ensure that the efficiency of the transistor is greater than 60%, the resistance factor δ is selected to be in the range of 0 to 0.3. In addition, λ is greater than 1, and the value range of λ is (1+δ / a,1.5).

[0033] Figure 3 1 is a simulation example diagram of the change of the real part of the fundamental frequency impedance Z1L with the auxiliary factor λ in the continuous F-type mode corrected by the auxiliary factor λ and the continuous J-type mode corrected by the auxiliary factor λ provided by the embodiment of the present invention. Figure 3 The left side is the Smith chart of the real part of the fundamental frequency impedance Z1L changing with the auxiliary factor λ in the continuous class J mode after correction by the auxiliary factor λ. Figure 3The right side of is the Smith chart of the change of the real part of the fundamental frequency impedance Z1L with the auxiliary factor λ in the continuous class F mode after correction by the auxiliary factor λ. It should be noted that the closer the symbol graph in the Smith chart is to the center of the sphere, the smaller the impedance change ratio is. Figure 3 As shown, no matter in the modified continuous class F mode or the modified continuous class J mode, when λ=1.5 and δ=0.3, the real part of the fundamental frequency impedance Z1L increases and is closest to the center of the Smith chart; when the λ value remains unchanged, the smaller the δ value is, the closer to the center of the Smith chart; when the δ value remains unchanged, the larger the λ value is, the closer to the center of the Smith chart.

[0034] That is to say, by introducing the auxiliary factor λ, the real part of the fundamental frequency impedance Z1L can be increased while ensuring that the real part of the harmonic load impedance Z2L remains unchanged, thereby expanding the impedance space corresponding to the RF power amplifier circuit, so that the impedance transformation ratio does not increase when the output terminal Ropt of the final transistor of the RF power amplifier circuit is small, thereby improving the working performance of the RF power amplifier circuit.

[0035] It should be noted that in order to avoid the normalized drain voltage V ds The swing is more than 3 times the drain voltage amplitude V dd , thereby breaking down the transistor. After determining the value range of λ and δ, the value of the reactance factor γ is appropriately reduced.

[0036] In combination with the above content, the specific composition and connection relationship of the RF power amplifier circuit are explained.

[0037] In one possible implementation, Figure 4 Schematic diagram of the specific composition and connection relationship of the RF power amplifier circuit provided by the embodiment of the present invention. Figure 4 As shown, the first impedance matching network includes: microstrip line TL1, microstrip line TL2, microstrip line TL3, microstrip line TL4, microstrip line TL5, capacitor C1, capacitor C2, capacitor C3 and capacitor C4; microstrip line TL5, microstrip line TL4, microstrip line TL2 and capacitor C2 are connected in sequence; between the drain of field effect transistor M1 and the output end of the first impedance matching network; the source of field effect transistor M1 is grounded, and the gate of field effect transistor M1 is connected to the output end of the second impedance matching network; one end of capacitor C4 is connected between microstrip line TL5 and microstrip line TL4, and the other end is grounded; one end of microstrip line TL3 is connected between microstrip line TL4 and microstrip line TL2, and the other end and one end of capacitor C1 are both connected to drain voltage Vd, and the other end of capacitor C1 is grounded; one end of capacitor C3 is connected between microstrip line TL2 and capacitor C2, and the other end is grounded; one end of microstrip line TL1 is connected to one end of capacitor C2, and the other end is grounded.

[0038] It should be noted that the capacitors in the RF power amplifier circuit are all MIM capacitors. MIM capacitors are a type of parallel plate capacitor, consisting of the top and second layers of metal and the dielectric between them. Compared with ordinary capacitors, the dielectric layer of MIM capacitors is thinner, so the capacitance density formed is higher, the parasitic effect is smaller, and the precision is high. Through special processes, the odd-numbered metal layers and the even-numbered metal layers can be connected separately to increase the capacitance per unit area. And the field effect transistors in the RF power amplifier circuit are B / J to F class transistors.

[0039] Here, in order to make the reflection coefficient of the output end of the RF power amplifier circuit meet the impedance at the second harmonic frequency and the impedance at the third harmonic frequency, the second harmonic impedance Z2L and the third harmonic impedance Z3L are satisfied, so that the capacitor C3 and the capacitor C4 provide short-circuit points at the second harmonic frequency and the third harmonic frequency respectively. Due to the characteristics of the MIM capacitor, and the frequency band of the third harmonic frequency is close to the frequency band of the second harmonic frequency, when the capacitor C3 and the capacitor C4 are short-circuited at the low frequency of the second harmonic impedance, the third harmonic impedance is also at a relatively low impedance level.

[0040] Here, the series-connected microstrip line TL2, microstrip line TL4 and microstrip line TL5 play the role of adjusting the second harmonic impedance Z2L and the third harmonic impedance Z3L of the impedance space corresponding to the RF power amplifier circuit, and these three microstrip lines also serve as fundamental frequency matching elements, and together with capacitor C2 and microstrip line TL1, adjust the fundamental frequency impedance Z1L. Microstrip line TL3 is used as a fundamental frequency matching element and a DC power supply bias line, which is open at the low frequency of the second harmonic impedance Z2L. Point A in the first impedance matching network is the conjugate of the input source impedance of the first impedance matching network and the fundamental frequency matching midpoint of the output impedance of the field effect transistor M1. Starting from point A, the fundamental frequency and harmonic matching impedance area matching of the resistive reactance continuous inverse F-type mode can be completed by optimizing microstrip line TL4, microstrip line TL5 and capacitor C4. Starting from point A to the other side, the conjugate matching of the output end of the field effect transistor M1 can be achieved by optimizing TL2 and TL3.

[0041] It should be understood that the "first impedance matching network" in the present invention may also be referred to as a power stage matching network.

[0042] Please continue to refer to Figure 4Considering that the synthetic impedance at both ends of the second impedance matching network needs to simultaneously satisfy the source impedance of the output end of the field effect transistor M1 and the output impedance of the second impedance matching network, it is first necessary to determine that the second impedance matching network is operating in a suitable state. Considering that the impedance condition of the continuous inverse class F mode is relatively easy to obtain, the second impedance matching network is placed in a resistive reactance continuous inverse class F mode to determine the components and connection relationship of the second impedance matching network. Specifically, the second impedance matching network includes: microstrip line TL6, microstrip line TL7, microstrip line TL8, microstrip line TL9, microstrip line TL10, capacitor C5, capacitor C6, capacitor C7 and capacitor C8; microstrip line TL6, microstrip line TL8, capacitor C7 and microstrip line TL10 are connected in sequence between the gate of the field effect transistor M1 and the input end of the second impedance matching network; one end of the microstrip line TL9 is connected between the capacitor C7 and the microstrip line TL10, and the other end and one end of the capacitor C6 are both connected to the drain voltage Vd, and the capacitor C6 and the capacitor C5 are connected in series and grounded; one end of the capacitor C8 is connected between the microstrip line TL8 and the capacitor C7, and the other end is grounded; one end of the microstrip line TL7 is connected between the microstrip line TL6 and the microstrip line TL8, and the other end and one end of the capacitor C5 are both connected to the gate voltage Vgs1.

[0043] It should be understood that the "second impedance matching network" in the present invention may also be referred to as an inter-stage matching network.

[0044] Please continue to refer to Figure 4 The RF power amplifier circuit also includes: a first inter-stage stabilization network; the first inter-stage stabilization network is connected between the gate of the field effect transistor M1 and the output end of the second impedance matching network; the first inter-stage stabilization network is used to stabilize the working state of the field effect transistor M1.

[0045] In another possible implementation, Figure 4 Based on this, the present invention also includes other circuit compositions. Figure 5 FIG. 1 is another schematic diagram of the specific composition and connection relationship of the RF power amplifier circuit provided by an embodiment of the present invention. Figure 5As shown, here, the RF power amplifier circuit also includes: a third impedance matching network, a fourth impedance matching network, a field effect transistor M2 and a field effect transistor M3; the fourth impedance matching network, the field effect transistor M3, the third impedance matching network and the field effect transistor M2 are connected in sequence; the input end of the fourth impedance matching network is used as the input end of the RF power amplifier circuit; the field effect transistor M2 is connected to the second impedance matching network; the fourth impedance matching network is used to receive the input power signal and match the impedance between the input end of the fourth impedance matching network and the field effect transistor M3, so as to output a fourth power signal using the input power signal; the field effect transistor M3 is used to amplify the fourth power signal to obtain a fifth power signal; the third impedance matching network is used to match the impedance between the field effect transistor M2 and the field effect transistor M3, so as to output a sixth power signal using the fifth power signal; the field effect transistor M2 is used to amplify the sixth power signal to obtain the first power signal.

[0046] For details, please refer to Figure 5 The third impedance matching network includes: microstrip line TL11, microstrip line TL12, microstrip line TL13, microstrip line TL14, microstrip line TL15, capacitor C9, capacitor C10 and capacitor C11; microstrip line TL13, capacitor C11, microstrip line TL14 and microstrip line TL15 are sequentially connected between the drain of field effect transistor M3 and the gate of field effect transistor M2; the source of field effect transistor M3 and the source of field effect transistor M2 are both grounded; the gate of field effect transistor M3 is connected to the fourth The output end of the impedance matching network is connected, and the gate of the field effect transistor M2 is connected to the output end of the third impedance matching network; one end of the microstrip line TL11 is connected between the microstrip line TL13 and the capacitor C11, and the other end and one end of the capacitor C9 are both connected to the drain voltage Vd; the capacitor C9 and the capacitor C10 are connected in series and grounded, and the other end of the capacitor C10 and one end of the microstrip line TL12 are both connected to the gate voltage Vgs2; the other end of the microstrip line TL12 is connected between the microstrip line TL14 and the microstrip line TL15.

[0047] It should be understood that the "third impedance matching network" in the present invention may also be referred to as a pre-driver stage matching network.

[0048] Please continue to refer to Figure 5The fourth impedance matching network includes: a microstrip line TL16, a microstrip line TL17, a microstrip line TL18, a capacitor C12 and a capacitor C13; the capacitor C13 and the microstrip line TL18 are connected in sequence between the input end of the fourth impedance matching network and the gate of the field effect transistor M3; one end of the microstrip line TL17 is connected between the capacitor C13 and the microstrip line TL18, and the other end and one end of the capacitor C12 are both connected to the gate voltage Vgs3, and the other end of the capacitor C12 is grounded; one end of the capacitor C13 is also connected to one end of the microstrip line TL16, and the other end of the microstrip line TL16 is grounded.

[0049] It should be noted that there is no specific model of the field effect transistors in the RF power amplifier circuit, and all are made using the GaAs pHEMT process. And the value of the gate voltage Vgs connected to the RF power amplifier circuit is the same.

[0050] Please continue to refer to Figure 5 , the RF power amplifier circuit also includes: a second interstage stabilization network; the second interstage stabilization network is connected between the output end of the third impedance matching network and the gate of the field effect transistor M2, and the second interstage stabilization network is used to stabilize the working state of the field effect transistor M2. And, the RF power amplifier circuit also includes: a third interstage stabilization network; the third interstage stabilization network is connected between the output end of the fourth impedance matching network and the gate of the field effect transistor M3; the third interstage stabilization network is used to stabilize the working state of the field effect transistor M3.

[0051] Here, by using an interstage stabilization network, it is possible to prevent the signal output by the transistor from returning to burn the transistor, or to superimpose with the signal inside the transistor to form an oscillator. It should be understood that the "first interstage stabilization network", "second interstage stabilization network" and "third interstage stabilization network" appearing in the present invention are only for distinction, and do not limit the type and number of interstage stabilization networks.

[0052] In view of the problem that the working bandwidth of the existing RF power amplifier cannot meet the requirements of different applications, the present invention provides a RF power amplifier circuit, which operates in a modified resistive mixed continuous mode, and has the advantages of ensuring that the impedance change ratio does not increase, and widening the impedance space of the RF power amplifier circuit, thereby widening the working bandwidth of the RF power amplifier circuit and improving the power amplification efficiency of the RF power amplifier circuit. When the RF power amplifier circuit provided by the present invention is applied to a system containing a large number of T / R components, the improvement of the power amplification efficiency of the RF power amplifier circuit can further effectively reduce the power consumption of the T / R components, improve the heat dissipation of the T / R components, and improve the working reliability of the T / R components, and finally reduce the power consumption of the entire system and strengthen the thermal management of the entire system.

[0053] In order to verify the working efficiency of the RF power amplifier circuit provided by the present invention and the degree of expansion of the working bandwidth, Figure 6 This is an example diagram comparing the working efficiency of the RF power amplifier circuit provided by an embodiment of the present invention and the simulation test of the working bandwidth expansion. Figure 6 (a) is a comparison diagram of the S parameters corresponding to the RF power amplifier circuit (i.e., simulation results) and the S parameters corresponding to the test results; Figure 6 (b) is a schematic diagram comparing the saturated output power and efficiency corresponding to the RF power amplifier circuit (i.e., simulation results) with the saturated output power and efficiency corresponding to the test results; Figure 6 (c) in the figure is a power scan comparison chart of the simulation results and the test results at different frequencies. Figure 6 As shown in (a), the gain flatness of the RF power amplifier circuit has been improved. The gain flatness of the amplifier, that is, the gain response within its entire operating bandwidth, fluctuates within the frequency band by 1dB. The reflection coefficients of the input port and output port of the RF power amplifier circuit do not exceed -10dB, indicating that the RF power amplifier circuit has good matching. Figure 6 As shown in (b), within the preset bandwidth range of 17-24 GHz, the average saturated output power is maintained at 0.5 W within the band, and the average power added efficiency is greater than 42%. Figure 6 As shown in (c) in the figure, the gain of the RF power amplifier circuit in the power amplifier saturation region is greater than 15 dB, and the power added efficiency (PAE) within the operating frequency band of the RF power amplifier circuit is higher.

[0054] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A radio frequency power amplifier circuit, characterized in that: include: A first impedance matching network, a field effect transistor M1, and a second impedance matching network; The first impedance matching network, the field effect transistor M1 and the second impedance matching network are connected in sequence, the output end of the first impedance matching network is used as the output end of the radio frequency power amplifier circuit, and the input end of the second impedance matching network is used to receive the input first power signal; The second impedance matching network is used to match the impedance between the field effect transistor M1 and the input end of the second impedance matching network, so as to output a second power signal using the first power signal; The field effect transistor M1 is used to amplify the second power signal to obtain a third power signal; The first impedance matching network is used to match the impedance between the field effect transistor M1 and the output end of the first impedance matching network, so as to output a target power signal using the third power signal. The working bandwidth corresponding to the target power signal is within a preset bandwidth range, and the working voltage corresponding to the target power signal is obtained based on the impedance space corresponding to the RF power amplifier circuit under the modified resistive hybrid continuous mode.

2. The radio frequency power amplifier circuit according to claim 1, characterized in that: The first impedance matching network includes: microstrip line TL1, microstrip line TL2, microstrip line TL3, microstrip line TL4, microstrip line TL5, capacitor C1, capacitor C2, capacitor C3 and capacitor C4; The microstrip line TL5, the microstrip line TL4, the microstrip line TL2 and the capacitor C2 are sequentially connected between the drain of the field effect transistor M1 and the output end of the first impedance matching network; the source of the field effect transistor M1 is grounded, and the gate of the field effect transistor M1 is connected to the output end of the second impedance matching network; One end of the capacitor C4 is connected between the microstrip line TL5 and the microstrip line TL4, and the other end is grounded; One end of the microstrip line TL3 is connected between the microstrip line TL4 and the microstrip line TL2, and the other end and one end of the capacitor C1 are both connected to the drain voltage Vd, and the other end of the capacitor C1 is grounded; One end of the capacitor C3 is connected between the microstrip line TL2 and the capacitor C2, and the other end is grounded; One end of the microstrip line TL1 is connected to one end of the capacitor C2, and the other end is grounded.

3. The radio frequency power amplifier circuit according to claim 1, characterized in that: The second impedance matching network includes: microstrip line TL6, microstrip line TL7, microstrip line TL8, microstrip line TL9, microstrip line TL10, capacitor C5, capacitor C6, capacitor C7 and capacitor C8; The microstrip line TL6, the microstrip line TL8, the capacitor C7 and the microstrip line TL10 are sequentially connected between the gate of the field effect transistor M1 and the input end of the second impedance matching network; One end of the microstrip line TL9 is connected between the capacitor C7 and the microstrip line TL10, and the other end and one end of the capacitor C6 are both connected to the drain voltage Vd, and the capacitor C6 and the capacitor C5 are connected in series and grounded; One end of the capacitor C8 is connected between the microstrip line TL8 and the capacitor C7, and the other end is grounded; One end of the microstrip line TL7 is connected between the microstrip line TL6 and the microstrip line TL8 , and the other end and one end of the capacitor C5 are both connected to the gate voltage Vgs1 .

4. The radio frequency power amplifier circuit according to claim 2, characterized in that: The RF power amplifier circuit also includes: a first inter-stage stabilization network; the first inter-stage stabilization network is connected between the gate of the field effect transistor M1 and the output end of the second impedance matching network; the first inter-stage stabilization network is used to stabilize the working state of the field effect transistor M1.

5. The radio frequency power amplifier circuit according to claim 1, characterized in that: The radio frequency power amplifier circuit further includes: a third impedance matching network, a fourth impedance matching network, a field effect transistor M2 and a field effect transistor M3; The fourth impedance matching network, the field effect transistor M3, the third impedance matching network and the field effect transistor M2 are connected in sequence; the input end of the fourth impedance matching network is used as the input end of the radio frequency power amplifier circuit; the field effect transistor M2 is connected to the second impedance matching network; The fourth impedance matching network is used to receive an input power signal and match the impedance between the input end of the fourth impedance matching network and the field effect transistor M3, so as to output a fourth power signal using the input power signal; The field effect transistor M3 is used to amplify the fourth power signal to obtain a fifth power signal; The third impedance matching network is used to match the impedance between the field effect transistor M2 and the field effect transistor M3, so as to output a sixth power signal using the fifth power signal; The field effect transistor M2 is used to amplify the sixth power signal to obtain the first power signal.

6. The radio frequency power amplifier circuit according to claim 5, characterized in that: The third impedance matching network includes: microstrip line TL11, microstrip line TL12, microstrip line TL13, microstrip line TL14, microstrip line TL15, capacitor C9, capacitor C10 and capacitor C11; The microstrip line TL13, the capacitor C11, the microstrip line TL14 and the microstrip line TL15 are sequentially connected between the drain of the field effect transistor M3 and the gate of the field effect transistor M2; the source of the field effect transistor M3 and the source of the field effect transistor M2 are both grounded; the gate of the field effect transistor M3 is connected to the output end of the fourth impedance matching network, and the gate of the field effect transistor M2 is connected to the output end of the third impedance matching network; One end of the microstrip line TL11 is connected between the microstrip line TL13 and the capacitor C11, and the other end and one end of the capacitor C9 are both connected to the drain voltage Vd; The capacitor C9 and the capacitor C10 are connected in series and grounded, and the other end of the capacitor C10 and one end of the microstrip line TL12 are both connected to the gate voltage Vgs2; The other end of the microstrip line TL12 is connected between the microstrip line TL14 and the microstrip line TL15.

7. The radio frequency power amplifier circuit according to claim 5, characterized in that: The fourth impedance matching network includes: microstrip line TL16, microstrip line TL17, microstrip line TL18, capacitor C12 and capacitor C13; The capacitor C13 and the microstrip line TL18 are sequentially connected between the input end of the fourth impedance matching network and the gate of the field effect transistor M3; One end of the microstrip line TL17 is connected between the capacitor C13 and the microstrip line TL18, and the other end and one end of the capacitor C12 are both connected to the gate voltage Vgs3, and the other end of the capacitor C12 is grounded; One end of the capacitor C13 is also connected to one end of the microstrip line TL16, and the other end of the microstrip line TL16 is grounded.

8. The radio frequency power amplifier circuit according to claim 6, characterized in that: The RF power amplifier circuit also includes: a second inter-stage stabilization network; the second inter-stage stabilization network is connected between the output end of the third impedance matching network and the gate of the field effect transistor M2, and the second inter-stage stabilization network is used to stabilize the working state of the field effect transistor M2.

9. The radio frequency power amplifier circuit according to claim 6, characterized in that: The RF power amplifier circuit also includes: a third inter-stage stabilization network; the third inter-stage stabilization network is connected between the output end of the fourth impedance matching network and the gate of the field effect transistor M3; the third inter-stage stabilization network is used to stabilize the working state of the field effect transistor M3.

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