Micro LED micro-display chip and manufacturing method thereof

Abstract

The invention provides a Micro LED micro display chip and a manufacturing method of the Micro LED micro display chip. The Micro LED micro-display chip comprises a driving panel, a plurality of LED chips and a plurality of LED chips, the plurality of LED units are arranged on the driving panel, the plurality of LED units are provided with a plurality of LED table boards which are in one-to-one correspondence, and each LED unit can be independently driven by the driving panel; the fence structure is provided with a plurality of grid holes, the plurality of grid holes are respectively arranged around the plurality of LED table boards, and concave areas are formed between the LED table boards and the corresponding grid holes; the heat insulation layer is arranged on the fence structure, the heat insulation layer is provided with a plurality of heat insulation units, and each heat insulation unit is filled in the corresponding concave area; the wavelength conversion layer comprises a plurality of wavelength conversion units, each wavelength conversion unit is embedded in the corresponding heat insulation unit, and each wavelength conversion unit and the corresponding LED unit are arranged in a spaced mode. According to the invention, the aging of the wavelength conversion layer is delayed, and the service life of the LED chip is prolonged.

Description

Technical Field

[0001] The present application relates to the field of LED display technology, and more specifically, to a Micro LED micro display chip and a method for manufacturing the same. Background Art

[0002] With the emergence of Micro LED display technology, miniaturization and high resolution of display devices such as augmented reality (AR) display devices, virtual reality (VR) display devices, near-eye display (NED) and head up display (HUD) devices have become possible.

[0003] However, during the operation of the Micro LED micro display chip, the heat generated by the LED will cause the wavelength conversion material to age faster, resulting in a shorter lifespan of the Micro LED micro display chip. Summary of the invention

[0004] The present application provides a Micro LED micro display chip and a method for manufacturing the same. The various aspects involved in the present application are introduced below.

[0005] In a first aspect, a Micro LED micro display chip is provided, comprising: a driving panel; a plurality of LED units arranged on the driving panel, the plurality of LED units having a plurality of LED tables corresponding to each other, and each of the LED units can be driven individually by the driving panel; a fence structure having a plurality of grid holes, the plurality of grid holes being respectively arranged around the plurality of LED tables, and a recessed area being formed between the LED tables and the corresponding grid holes; a heat insulation layer being arranged on the fence structure, the heat insulation layer having a plurality of heat insulation units, and each of the heat insulation units being filled in the corresponding recessed area; a wavelength conversion layer comprising a plurality of wavelength conversion units, each of the wavelength conversion units being embedded in the corresponding heat insulation unit, and each of the wavelength conversion units being spaced apart from the corresponding LED unit.

[0006] In some possible implementations, the thermal insulation unit includes a second thermal insulation unit, and the Micro LED micro display chip also includes: a transmissive reflective layer, the LED unit is arranged on a first side of the transmissive reflective layer, the second thermal insulation unit is arranged on the opposite side of the first side of the transmissive reflective layer, each of the wavelength conversion units is embedded in the corresponding second thermal insulation unit, and the transmissive reflective layer transmits the light emitted by the LED unit and reflects other color lights.

[0007] In some possible implementations, the heat insulation unit further includes a first heat insulation unit, and the first heat insulation unit is disposed on a first side of the transmissive reflective layer.

[0008] In some possible implementations, the heat insulation unit further includes a third heat insulation unit, and the third heat insulation unit is disposed on the opposite side of the first side of the transmissive reflective layer and is located between the transmissive reflective layer and the second heat insulation unit.

[0009] In some possible implementations, the fence structure includes a first fence structure, a second fence structure and a third fence structure, the third fence structure is located between the first fence structure and the second fence structure, the first thermal insulation unit is disposed in the grid holes formed by the first fence structure, the second thermal insulation unit is disposed in the grid holes formed by the second fence structure, and the third thermal insulation unit is disposed in the grid holes formed by the third fence structure.

[0010] In some possible implementations, the Micro LED micro display chip further includes: a reflective layer, at least disposed on a side wall of the grid hole, the reflective layer is capable of heat conduction, and the wavelength conversion layer is spaced apart from the reflective layer.

[0011] In some possible implementations, the thermal conductivity of the light reflecting layer is greater than the thermal conductivity of the heat insulating layer.

[0012] In some possible implementations, the wavelength conversion unit includes a first wavelength conversion unit, the first wavelength conversion unit is embedded in the corresponding heat insulation unit, the LED unit emits a first color light, and the first wavelength conversion unit converts the first color light into a second color light.

[0013] In some possible implementations, the wavelength conversion unit further includes a second wavelength conversion unit, which is embedded in the corresponding heat insulation unit and converts the first color light into a third color light.

[0014] In some possible implementations, the wavelength conversion unit further includes a third wavelength conversion unit, wherein the third wavelength conversion unit is embedded in the corresponding heat insulation unit, and the third wavelength conversion unit converts the first color light into a fourth color light.

[0015] In a second aspect, a method for manufacturing a Micro LED micro display chip is provided, comprising: providing a driving panel; forming a plurality of LED units on the driving panel, the plurality of LED units having a plurality of LED tables corresponding to each other, and each of the LED units can be driven individually by the driving panel; forming a fence structure having a plurality of grid holes, the plurality of grid holes being respectively arranged around the plurality of LED tables, and a recessed area being formed between the LED tables and the corresponding grid holes; forming a heat insulation layer on the fence structure, the heat insulation layer having a plurality of heat insulation units, each of the heat insulation units being filled in the corresponding recessed area; forming a wavelength conversion layer, the wavelength conversion layer comprising a plurality of wavelength conversion units, each of the wavelength conversion units being embedded in the corresponding heat insulation unit, and each of the wavelength conversion units being spaced apart from the corresponding LED unit.

[0016] In some possible implementations, the forming of the fence structure having a plurality of grid holes includes: forming a first layer of fence structure having a plurality of first grid holes, the plurality of first grid holes being respectively arranged around the plurality of LED countertops, and a first recessed area being formed between the LED countertops and the corresponding first grid holes; the method also includes: forming a transmissive reflective layer on the first layer of fence structure, the transmissive reflective layer transmitting light emitted by the LED unit and reflecting light of other colors; forming a second layer of fence structure having a plurality of second grid holes on the transmissive reflective layer; forming a second heat insulation layer on the second layer of fence structure, the second heat insulation layer having a plurality of second heat insulation units, each of the second heat insulation units being filled in the corresponding second grid hole; the forming of the wavelength conversion layer includes: forming the wavelength conversion layer in the second heat insulation layer, each of the wavelength conversion units being embedded in the corresponding second heat insulation unit.

[0017] In some possible implementations, forming a thermal insulation layer on the fence structure includes: forming a first thermal insulation layer on the first fence structure, the first thermal insulation layer having a plurality of first thermal insulation units, each of the first thermal insulation units being filled in a corresponding first recessed area.

[0018] In some possible implementations, the forming of the second thermal insulation layer on the second fence structure includes: forming a first sub-insulation layer on the second fence structure, the first sub-insulation layer is filled in the second grid holes, and the top surface of the first sub-insulation layer is lower than the top surface of the second fence structure; forming a plurality of second recessed areas on the first sub-insulation layer, each of the second recessed areas is located in a corresponding second grid hole; the forming of the wavelength conversion layer includes: forming the wavelength conversion layer on the first sub-insulation layer, each of the wavelength conversion units is filled in a corresponding second recessed area; forming a second sub-insulation layer on the first sub-insulation layer, the second sub-insulation layer covers the wavelength conversion layer, and the top surface of the second sub-insulation layer is flush with the top surface of the second fence structure; wherein the first sub-insulation layer and the second sub-insulation layer form the second thermal insulation layer.

[0019] In some possible implementations, before forming a second layer of fence structure having a plurality of second grid holes on the transmissive reflective layer, the method further includes: forming a third thermal insulation layer on the transmissive reflective layer, wherein the third thermal insulation layer is located between the transmissive reflective layer and the second thermal insulation layer; forming a plurality of annular grooves on the third thermal insulation layer, wherein each of the annular grooves penetrates the third thermal insulation layer and the transmissive reflective layer, and each of the annular grooves is arranged around the first grid holes; and forming a third layer of fence structure on the first layer of fence structure, wherein the third layer of fence structure is filled in each of the annular grooves, and the third layer of fence structure is located between the first layer of fence structure and the second layer of fence structure.

[0020] In some possible implementations, after forming a third fence structure on the first fence structure, the method further includes: forming the second fence structure on the third fence structure; and forming the second thermal insulation layer on the third thermal insulation layer.

[0021] In some possible implementations, before forming the thermal insulation layer on the fence structure, the method further includes: forming a reflective layer on the fence structure, the reflective layer being arranged at least on the side walls of the grid holes, the reflective layer being capable of heat conduction, and the wavelength conversion layer being spaced apart from the reflective layer; wherein the thermal conductivity of the reflective layer is greater than the thermal conductivity of the thermal insulation layer.

[0022] The embodiment of the present application provides a Micro LED micro display chip, including: a driving panel; a plurality of LED units, arranged on the driving panel, the plurality of LED units having a plurality of LED tables corresponding to each other, and each LED unit can be driven individually by the driving panel; a fence structure having a plurality of grid holes, the plurality of grid holes being respectively arranged around the plurality of LED tables, and a recessed area being formed between the LED tables and the corresponding grid holes; a heat insulation layer, arranged on the fence structure, the heat insulation layer having a plurality of heat insulation units, each heat insulation unit being filled in the corresponding recessed area; a wavelength conversion layer, including a plurality of wavelength conversion units, each wavelength conversion unit being embedded in a corresponding heat insulation unit, and each wavelength conversion unit being spaced apart from the corresponding LED unit. This solution embeds the wavelength conversion unit in the corresponding heat insulation unit, so that each wavelength conversion unit is spaced apart from the corresponding LED unit, thereby helping to reduce or limit the heat generated by the LED unit from being conducted to the corresponding wavelength conversion unit, thereby helping to delay the aging of the wavelength conversion layer and improve the life of the Micro LED micro display chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the cross-sectional structure of a Micro LED micro display chip provided by related technology.

[0024] Figure 2 yes Figure 1 Cross-sectional view of the Micro LED micro display chip along the AA cutting line.

[0025] Figure 3 It is a schematic diagram of the cross-sectional structure of a Micro LED micro display chip provided in an embodiment of the present application.

[0026] Figure 4 yes Figure 3 Cross-sectional view of the Micro LED micro display chip along the CC cutting line.

[0027] Figure 5 It is a schematic diagram of the cross-sectional structure of another Micro LED micro display chip provided in an embodiment of the present application.

[0028] Figure 6 This is a schematic diagram of the cross-sectional structure of another Micro LED micro display chip provided in an embodiment of the present application.

[0029] Figure 7 It is a flow chart of the method for manufacturing a Micro LED micro display chip provided in an embodiment of the present application.

[0030] Figure 8 yes Figure 7 A schematic flow chart of a possible implementation of the preparation method.

[0031] Figure 9a-9c yes Figure 3 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages.

[0032] Figure 10a-10f yes Figure 5 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages.

[0033] Figure 11a-Figure 11f yes Figure 6 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages. DETAILED DESCRIPTION

[0034] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0035] It should be specially noted that in the description of the present application, the terms "on", "over", "above", and "over" should be interpreted in the broadest sense, meaning that the description containing these terms is interpreted as "a component may be set on another component in direct contact, or there may be intermediate components or layers between the components."

[0036] In addition, for ease of description, the present application may also use spatially relative terms such as "under", "beneath", "under", "on", "above", "above", "lower", "upper", etc. to describe the relationship of one element or component to another element or component shown in the drawings. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90° or at other orientations), and the spatially relative descriptors used in the present application should be interpreted accordingly.

[0037] The term "layer" as used in this application refers to a portion of a material that includes an area having a certain thickness. A layer may extend over the entire underlying or superstructure, or may extend over a localized area of ​​the underlying or superstructure. In addition, a layer may be an area of ​​a homogeneous or inhomogeneous continuous structure whose thickness is less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of the continuous structure or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically and / or along a tapered surface.

[0038] In recent years, Micro-LED has attracted wide attention due to its low power consumption, fast response, long life and high light efficiency. Micro LED display technology is a self-luminous display technology that integrates arrayed micron-level LED units (also called LED units) on an active addressing drive panel to achieve individual control and lighting to output display images.

[0039] Micro LED display has many advantages such as self-luminescence, high efficiency, low power consumption, high integration, high stability, etc. It is small in size, highly flexible, easy to disassemble and merge, and can be applied to any existing display application from small to large size.

[0040] Micro LED is also known as micro light emitting diode. The size of Micro LED is 0.1-10 microns. With the emergence of MicroLED display technology, the miniaturization and high resolution of display devices such as augmented reality (AR) display devices, virtual reality (VR) display devices, near-eye display (NED) and head up display (HUD) devices have become possible.

[0041] In the related art, a Micro LED micro display chip generally includes a driving panel, a plurality of LED units, and a fence structure having a plurality of grid holes. The plurality of LED units are arranged on one side surface of the driving panel, the fence structure is arranged on the side surface of the driving panel facing the LED units, and the plurality of grid holes correspond to each other to accommodate the plurality of LED units. Figure 1 Provide explanation.

[0042] Figure 1 This is a cross-sectional structural diagram of a Micro LED micro display chip. Figure 2 yes Figure 1 A cross-sectional view of the Micro LED micro display chip along the AA section line. Figure 1 As shown, the Micro LED micro display chip 100 may include a driving panel 110, a plurality of LED units 120, and a fence structure 130 having a plurality of grid holes.

[0043] The driving panel 110 may be a display substrate including a complementary metal oxide semiconductor (CMOS) silicon substrate or a thin film transistor (TFT) glass substrate. Exemplarily, the driving panel 110 may include a first substrate and a plurality of driving circuits (not shown in the drawings) and a plurality of cathodes 112 located on a surface of one side of the first substrate. The plurality of driving circuits are electrically connected to the plurality of cathodes 112 in a one-to-one correspondence, and each driving circuit includes a CMOS device or a TFT device, etc.

[0044] The plurality of LED units 120 are disposed at intervals from each other on one side surface of the driving panel 110. The plurality of LED units 120 may be distributed in an array.

[0045] The fence structure 130 is located on a side surface of the driving panel 110 facing the LED unit 120. The fence structure 130 has a plurality of grid holes 131. The number of the grid holes 131 can be set in a one-to-one correspondence with the plurality of LED units 120. The plurality of grid holes 131 can be respectively arranged around the plurality of LED countertops, so that a recessed area is formed between the LED countertops and the corresponding grid holes 131. The recessed area can be in a bowl shape or a trumpet shape.

[0046] At least one side wall of the fence structure 130 is provided with a reflective layer 132. The reflective layer 132 plays a role in reflecting light and conducting heat. The reflective layer 132 is made of a heat-conducting material, such as a metal reflective material such as aluminum.

[0047] The Micro LED micro display chip 100 may further include a bonding layer 140. The P-type semiconductor layer of the LED unit 120 is adhered or bonded to the surface of the driving panel 110 through the bonding layer 140, that is, the bonding may constitute a common anode of the LED unit 120. Based on this, the driving panel 110 may apply an anode voltage to the plurality of LED units 120 through the bonding layer 140, and apply a cathode voltage to the plurality of LED units 120 individually through the plurality of cathodes 112, thereby driving the plurality of LED units 120 to emit light individually.

[0048] The Micro LED micro display chip 100 may further include a passivation layer 150 , and the material of the passivation layer 150 may include an inorganic material or an organic material.

[0049] The Micro LED micro display chip 100 further includes an electrode layer 160, which is located on a surface of the passivation layer 150 facing away from the driving panel 110, and the electrode layer 160 may include a plurality of first electrodes 161. The plurality of first electrodes 161 are disposed between the plurality of LED units 120 and the plurality of cathodes 112 in a one-to-one correspondence.

[0050] The Micro LED micro display chip 100 further includes a wavelength conversion layer 170 , and the wavelength conversion layer 170 is filled in the grid holes 131 .

[0051] In some examples, the wavelength conversion layer 170 includes three wavelength conversion units, and the three wavelength conversion units are filled in the grid holes 131 accordingly. The three wavelength conversion units can convert the first color light emitted by the LED unit 120 into the second color light, the third color light and the fourth color light respectively. For example, the first color light can be ultraviolet light, the second color light can be red light, the third color light can be green light, and the fourth color light can be blue light. In this way, the full-color display of the MicroLED micro display chip 100 can be achieved. It should be understood that if the first color light is blue light, there is no need to fill the wavelength conversion unit in the corresponding grid hole emitting blue light.

[0052] During the long-term display process of the Micro LED micro display chip 100, the LED unit 120 generates heat. The heat generated by the LED unit 120 accelerates the aging of the wavelength conversion layer 170, thereby shortening the life of the Micro LED micro display chip.

[0053] Therefore, it is necessary to design a technical solution for a Micro LED micro display chip that delays the aging of the wavelength conversion layer. The Micro LED micro display chip in the embodiment of the present application is described in detail below in conjunction with the accompanying drawings.

[0054] Figure 3 It is a schematic diagram of the cross-sectional structure of a Micro LED micro display chip provided in an embodiment of the present application. Figure 4 yes Figure 3 The cross-sectional view of the Micro LED micro display chip along the CC section line. The following takes the common anode structure as an example, combined with Figure 3 The Micro LED micro display chip of the embodiment of the present application is described in detail. Figure 3 As shown, the Micro LED micro display chip 300 may include: a driving panel 310 , a plurality of LED units 320 , a fence structure 330 , a heat insulation layer 370 and a wavelength conversion layer 380 .

[0055] The driving panel 310 may be a display substrate including a CMOS silicon substrate or a TFT glass substrate. Exemplarily, the driving panel 310 may include a first substrate and a plurality of driving circuits (not shown in the drawings) and a plurality of contacts 312 located on a surface of one side of the first substrate, and the contacts 312 may be cathode contacts. The plurality of driving circuits are electrically connected to the plurality of cathode contacts 312 in a one-to-one correspondence, and each driving circuit includes a CMOS device or a TFT device, etc.

[0056] The plurality of LED units 320 are arranged at intervals on one side of the driving panel 310. Generally, the plurality of LED units 320 may be distributed in an array.

[0057] The fence structure 330 is located on the side of the driving panel 310 facing the LED unit 320, that is, on the same side of the driving panel 310 as the LED unit 320. The fence structure 330 includes a plurality of grid holes 331, and the number of the grid holes 331 can be set in a one-to-one correspondence with the plurality of LED units 320. The plurality of grid holes 331 can be respectively arranged around the plurality of LED countertops, so that a recessed area is formed between the LED countertops and the corresponding grid holes 331, and the recessed area can be bowl-shaped or trumpet-shaped.

[0058] The fence structure 330 can prevent light crosstalk between the plurality of LED units 320. For example, the material of the fence structure 330 can be a light-absorbing material such as black photoresist, color photoresist, resin, etc.

[0059] In some implementations, the Micro LED micro display chip 300 may include a reflective layer 332. The reflective layer 332 is at least coated on the sidewall of the fence structure 330. The thermal conductivity of the reflective layer 332 may be, for example, 1 W / (m·K). The material of the reflective layer 332 may be, for example, a metal material such as aluminum. The reflective layer 332 can conduct heat to the driving panel 310 to quickly dissipate the heat.

[0060] The reflective layer 332 plays a role in reflecting light and conducting heat. The reflective layer 332 and the light emitting direction of the LED unit 320 usually have a certain angle. By setting the reflective layer 332 on the side wall of the fence structure 330, the reflective layer 332 can be used to reflect more light emitted by the LED unit 320 toward the light emitting direction of the LED unit 320, which helps to improve the light emitting efficiency and light brightness of the Micro LED micro display chip 300.

[0061] The heat insulating layer 370 is disposed on the fence structure 330 , and the heat insulating layer 370 has a plurality of heat insulating units, each of which is filled in a corresponding recessed area. In other words, the heat insulating layer 370 is filled in the grid holes 331 .

[0062] In some implementations, the thermal conductivity of the light reflecting layer 332 is greater than the thermal conductivity of the thermal insulation layer 370. The thermal conductivity of the thermal insulation layer 370 may be, for example, 0.12 W / (m·K) or 0.05 W / (m·K).

[0063] The material of the heat insulating layer 370 is a heat insulating material. Exemplarily, the material of the heat insulating layer 370 can be any one or more of the following materials: methyl methacrylate (MMA), polymethyl methacrylate (PMMA), epoxy resin, styrene, polyurethane. It is understandable that the material of the heat insulating layer 370 is a transparent material with good light transmittance.

[0064] The wavelength conversion layer 380 is embedded in the heat insulation layer 370 and is spaced apart from the LED unit 320. That is, the wavelength conversion layer 380 includes a plurality of wavelength conversion units, each of which is embedded in a corresponding heat insulation unit, and each of which is spaced apart from a corresponding LED unit 320. The wavelength conversion layer 380 is spaced apart from the reflective layer 332, which can effectively prevent the reflective layer 332 or the LED unit 320 from transferring heat to the wavelength conversion layer 380, thereby improving the service life of the Micro LED micro display chip 300.

[0065] In some examples, the wavelength conversion layer 380 includes three wavelength conversion units, and the three wavelength conversion units are filled in the grid holes 331 accordingly. The three wavelength conversion units can convert the first color light emitted by the LED unit 320 into the second color light, the third color light and the fourth color light respectively. For example, the first color light can be ultraviolet light, the second color light can be red light, the third color light can be green light, and the fourth color light can be blue light. In this way, the full-color display of the MicroLED micro display chip 300 can be achieved. It should be understood that if the first color light is blue light, the corresponding grid hole 331 that emits blue light does not need to be filled with a wavelength conversion unit.

[0066] In some implementations, the wavelength conversion layer 380 may include a plurality of first wavelength conversion units, a plurality of second wavelength conversion units, and a plurality of third wavelength conversion units. The first wavelength conversion unit is embedded in the corresponding heat insulation unit, the LED unit 320 emits a first color light, and the first wavelength conversion unit converts the first color light into a second color light. The second wavelength conversion unit is embedded in the corresponding heat insulation unit, and the second wavelength conversion unit converts the first color light into a third color light. The third wavelength conversion unit is embedded in the corresponding heat insulation unit, and the third wavelength conversion unit converts the first color light into a fourth color light.

[0067] In some implementations, the Micro LED micro display chip 300 may further include a bonding layer 340 , a passivation layer 350 , and an electrode layer 360 .

[0068] In the common anode configuration, the anode pins (contacts) of all LED units 320 are connected together and connected to the positive power supply. Each cathode contact 312 is provided in the driving panel 310, and each cathode contact 312 can be electrically connected to the corresponding LED unit 320 through a semiconductor material layer (e.g., a semiconductor material layer doped with N, P ions). For example, the P-type semiconductor layer of the LED unit 320 is attached or bonded to the driving panel 310 through a continuous bonding layer 340, that is, the bonding can constitute a common anode of the LED unit 320. Based on this, the driving panel 310 can apply an anode voltage to the multiple LED units 320 through the bonding layer 340, and apply a cathode voltage to the multiple LED units 320 individually through the multiple cathode contacts 312, so as to drive the multiple LED units 320 to emit light individually.

[0069] The material of the passivation layer 350 may include an inorganic material or an organic material. For example, the material of the passivation layer 350 may include any one or a combination of silicon dioxide (SiO2), aluminum oxide (Al2O3), zirconium dioxide (ZrO2), silicon nitride (Si3N4) and hafnium oxide (HfO2), and the material of the passivation layer 350 may also include any one or a combination of black photoresist, color photoresist and polyimide.

[0070] The electrode layer 360 is located on a side of the passivation layer 350 away from the driving panel 310 , and the electrode layer 360 may include a plurality of first electrodes 361 . The plurality of first electrodes 361 are disposed between the plurality of LED units 320 and the plurality of cathode contacts 312 in a one-to-one correspondence.

[0071] It can be seen from the above content that this solution embeds the wavelength conversion unit in the corresponding heat insulation unit so that each wavelength conversion unit is spaced apart from the corresponding LED unit 320, thereby helping to reduce or limit the heat generated by the LED unit 320 from being conducted to the corresponding wavelength conversion unit, thereby helping to delay the aging of the wavelength conversion layer 380 and improving the service life of the Micro LED micro display chip.

[0072] Figure 5 yes Figure 3 A cross-sectional structural diagram of another possible implementation of a Micro LED micro display chip. Figure 5As shown, the Micro LED micro display chip 300 may further include a transmissive reflective layer 390. The heat insulation layer 370 may include a first heat insulation layer 372 and a second heat insulation layer 374. The second heat insulation layer 374 may include a second heat insulation unit, the LED unit 320 is arranged on the first side of the transmissive reflective layer 390, the second heat insulation unit is arranged on the opposite side of the first side of the transmissive reflective layer 390, each wavelength conversion unit in the wavelength conversion layer 380 is embedded in the corresponding second heat insulation unit, and the transmissive reflective layer 390 transmits the light emitted by the LED unit 320 and reflects other color lights.

[0073] It should be understood that the transflective layer 390 is located between the first insulation layer 372 and the second insulation layer 374. That is, the first side of the transflective layer 390 is the first insulation layer 372 and the plurality of LED units 320, and the opposite side of the first side of the transflective layer 390 is the second insulation layer 374.

[0074] The first heat-insulating layer 372 includes a plurality of first heat-insulating units, and the second heat-insulating layer 374 includes a plurality of second heat-insulating units. Each first heat-insulating unit is wrapped around the LED unit 320, and each wavelength conversion unit in the wavelength conversion layer 380 is embedded in a corresponding second heat-insulating unit.

[0075] The transmissive reflective layer 390 may be a distributed Bragg reflector (DBR) layer made of inorganic materials. The DBR is formed by stacking inorganic materials with high and low refractive indices, and can reflect light upward, increase brightness, and provide heat insulation.

[0076] DBR stacks thin films of different refractive indices alternately and periodically. When light passes through these thin films of different refractive indices, the light reflected from each layer constructively interferes due to the change in phase angle, and then combines with each other to obtain strong reflected light and increase brightness. Due to the poor thermal conductivity of inorganic materials, the DBR transmissive reflective layer 390 can play a role in heat insulation.

[0077] exist Figure 5 In the embodiment, a fence structure 330 (also referred to as a first-layer fence structure 330) and a second-layer fence structure 338 are provided on the upper and lower sides of the transmissive reflective layer 390, and a reflective layer 332 (also referred to as a first-layer fence structure 332) is provided at least on the side wall of the fence structure 330, and a second reflective layer 394 is provided at least on the side wall of the second-layer fence structure 338. The heat generated by the LED unit 320 can be dissipated by heat conduction to the drive panel 310 through the reflective layer 332 on the lower side of the transmissive reflective layer 390. The second heat insulation layer 374 and the second reflective layer 394 on the upper side of the transmissive reflective layer 390 can dissipate heat, and the grid materials of the fence structure 330 and the second-layer fence structure 338 can also have a heat insulation effect.

[0078] Figure 6 yes Figure 3 A cross-sectional structural diagram of another possible implementation of a Micro LED micro display chip. Figure 6 As shown, the heat insulation unit further includes a third heat insulation unit, which is disposed on the opposite side of the first side of the transmissive reflective layer 390 and is located between the transmissive reflective layer 390 and the second heat insulation unit. That is to say, along the light emitting direction of the LED unit 320, the heat insulation layer 370 further includes a third heat insulation layer 376, and the third heat insulation layer 376 includes a plurality of third heat insulation units. Among them, the first heat insulation layer 372 is coated on the outside of the LED unit 320, the third heat insulation layer 376 is located between the transmissive reflective layer 390 and the second heat insulation layer 374, the second heat insulation layer 374 is disposed on the third heat insulation layer 376, and the wavelength conversion layer 380 is embedded in the second heat insulation layer 374.

[0079] The first side of the transmissive reflective layer 390 is the first heat insulation layer 372 and the plurality of LED units 320, and the opposite side of the first side of the transmissive reflective layer 390 is the second heat insulation layer 374. The transmissive reflective layer 390 may be a DBR layer made of inorganic materials. The DBR is formed by stacking inorganic materials with high and low refractive indices, and can reflect light upward, increase brightness, and provide heat insulation.

[0080] Continue to see Figure 6 , the Micro LED micro display chip also includes a third-layer fence structure 337, and a third reflective layer 396 is provided at least on the sidewall of the third-layer fence structure 337. The third-layer fence structure 337 is located between the fence structure 330 (which may also be referred to as the first-layer fence structure 330 at this time) and the second-layer fence structure 338, the first heat insulation unit is disposed in the grid hole formed by the fence structure 330, the second heat insulation unit is disposed in the grid hole formed by the second-layer fence structure 338, and the third heat insulation unit is disposed in the grid hole formed by the third-layer fence structure 337. In other words, the first heat insulation layer 372 is filled in the grid hole formed by the fence structure 330, the second heat insulation layer 374 is filled in the grid hole formed by the second-layer fence structure 338, and the third heat insulation layer 376 is filled in the grid hole formed by the third-layer fence structure 337.

[0081] In some implementations, the fence structure 330, the second-layer fence structure 338, and the third-layer fence structure 337 are connected, and the grid holes have a good light crosstalk prevention effect. The reflective layer 332, the second reflective layer 394, and the third reflective layer 396 on the upper and lower sides of the transmissive reflective layer 390 are also connected. The heat generated by the LED unit 320 can be dissipated through the reflective layer 332 on the lower side of the transmissive reflective layer 390 to the drive panel 310, and part of the heat can also be dissipated through the second reflective layer 394 and the third reflective layer 396 on the upper side of the transmissive reflective layer 390. The surface of the second heat insulation layer 374 on the upper side of the transmissive reflective layer 390 can dissipate heat, and the grid material of the fence structure 330 has good heat insulation performance and can achieve a heat insulation effect. It should be understood that the third thermal insulation layer 376 includes a plurality of annular grooves, each of which penetrates the third thermal insulation layer 376 and the transmissive reflective layer 390, and each of which is arranged around the first grid hole; the third layer fence structure 337 is filled in each annular groove, so that the fence structures on the upper and lower sides of the transmissive reflective layer 390 are connected.

[0082] Combination of the above Figures 1 to 6 The device embodiment of the present application is described in detail. Figure 7 to Figure 1 0 The method embodiment of the present application is described in detail. It should be understood that the description of the method embodiment corresponds to the description of the device embodiment, so the parts not described in detail can refer to the previous device embodiment.

[0083] Figure 7 Schematic diagram of the method for manufacturing a Micro LED micro display chip provided in an embodiment of the present application. Figure 7 As shown, the method may mainly include steps S710 to S750, which are described in detail below.

[0084] It should be pointed out that the size of the serial numbers of the steps in the embodiments of the present application does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.

[0085] In step S710, a driving panel is provided.

[0086] The driving panel 310 may be a display substrate including a CMOS silicon substrate or a TFT glass substrate. The plurality of LED units 320 may be distributed in an array.

[0087] In step S720, a plurality of LED units are formed on the driving panel, the plurality of LED units having a plurality of LED mesas corresponding to each other, and each LED unit can be driven individually by the driving panel.

[0088] In step S730, a fence structure having a plurality of grid holes is formed, wherein the plurality of grid holes are respectively arranged around a plurality of LED countertops, and recessed areas are formed between the LED countertops and the corresponding grid holes.

[0089] In step S740, a heat insulation layer is formed on the fence structure, wherein the heat insulation layer has a plurality of heat insulation units, and each heat insulation unit is filled in a corresponding recessed area.

[0090] In step S750, a wavelength conversion layer is formed, the wavelength conversion layer comprising a plurality of wavelength conversion units, each wavelength conversion unit is embedded in a corresponding heat insulation unit, and each wavelength conversion unit is spaced apart from a corresponding LED unit.

[0091] In some implementations, the outer wall of the fence structure may be coated to form a reflective layer. The reflective layer is made of a heat-conducting material, and the reflective layer can conduct heat to the drive panel.

[0092] In some implementations, embedding the wavelength conversion layer in the thermal insulation layer may include: etching a filling hole to be filled with the wavelength conversion layer in the thermal insulation layer, the filling hole being spaced apart from the LED unit and the reflective layer; and filling the wavelength conversion layer in the filling hole.

[0093] In the embodiment of the present application, a heat insulation layer is arranged in the grid holes formed by the fence structure, the heat insulation layer is made of heat insulation material, the wavelength conversion layer embedded in the heat insulation layer is arranged at intervals from the LED unit, and the heat generated by the LED unit is preferentially conducted out through the driving panel, which can reduce or limit the heat generated by the LED unit from being conducted to the wavelength conversion layer. The embodiment of the present application helps to delay the aging of the wavelength conversion layer and increase the life of the LED chip.

[0094] Taking the common anode structure as an example, the method for manufacturing the Micro LED micro display chip according to the embodiment of the present application is further described below in combination with some possible implementation methods of the embodiment of the present application.

[0095] Figure 8 yes Figure 7 A schematic flow chart of a possible implementation of the preparation method. Figure 9a-9c Too Figure 3 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages. Figure 3 The Micro LED micro display chip is a single-layer heat-insulating coating type. Figure 8 The preparation process method may include steps S810 to S840, which are described in detail below.

[0096] In step S810, a grid network is manufactured based on the fence structure and the light-emitting layer, and a plurality of grid holes are filled with a heat-insulating material.

[0097] like Figure 9a As shown, a plurality of LED units 320 spaced apart from each other are arranged on one side of the driving panel 310. A fence structure 330 is formed on the side of the driving panel 310 facing the LED units 320, and a reflective layer 332 is coated on the outer wall of the fence structure 330, so that the fence structure 330 and the reflective layer 332 define a plurality of grid holes 331, so that the plurality of LED units 320 are correspondingly accommodated in the plurality of grid holes 331. The reflective layer is made of a heat-conducting material, and the reflective layer can conduct heat to the driving panel.

[0098] The space of the grid hole 331 outside the LED unit is covered with a heat insulating layer 370. The heat conductivity of the heat insulating layer 370 may be, for example, 0.12 W / (m·K) or 0.05 W / (m·K).

[0099] In step S820, a second recessed area 371 to be filled with the wavelength conversion layer is etched in the heat insulation layer 370, and the second recessed area 371 is spaced apart from the LED unit 320 and the reflective layer 332. Figure 9b shown.

[0100] In step S830, the wavelength conversion layer 380 is filled in the second recessed area 371. Fig.9c shown.

[0101] Since the wavelength conversion layer 380 is spaced apart from the LED unit 320 and the reflective layer 332 , the heat generated by the LED unit will be preferentially conducted to the driving panel through the reflective layer 332 having good thermal conductivity and then dissipated.

[0102] In step S840, the wavelength conversion layer 380 in the plurality of grid holes 331 is coated with a heat insulating material to flatten the surface of the display chip. Figure 3 shown.

[0103] In some examples, the wavelength conversion layer 380 includes three wavelength conversion units, and the three wavelength conversion units are filled in the grid holes 331 accordingly. The three wavelength conversion units can convert the first color light emitted by the LED unit 320 into the second color light, the third color light and the fourth color light respectively. For example, the first color light can be ultraviolet light, the second color light can be red light, the third color light can be green light, and the fourth color light can be blue light. In this way, the full-color display of the MicroLED micro display chip 300 can be achieved. It should be understood that if the first color light is blue light, the corresponding grid hole 331 that emits blue light does not need to be filled with a wavelength conversion unit.

[0104] In the embodiment of the present application, a heat insulation layer is arranged in the grid holes formed by the fence structure, the heat insulation layer is made of heat insulation material, the wavelength conversion layer embedded in the heat insulation layer is arranged at intervals from the LED unit, and the heat generated by the LED unit is preferentially conducted to the drive panel through the reflective layer with good thermal conductivity and dissipated. The embodiment of the present application can reduce the heat generated by the LED unit from being conducted to the wavelength conversion layer, which helps to delay the aging of the wavelength conversion layer and increase the life of the LED chip.

[0105] In some implementations, along the light emitting direction of the LED unit, the plurality of grid holes can be divided into a plurality of first grid holes and a plurality of corresponding second grid holes, and the heat insulation layer can be divided into a first heat insulation layer and a second heat insulation layer, and the plurality of LED units are correspondingly accommodated in the plurality of first grid holes. That is, the Micro LED micro display chip can be a double-layer heat insulation coating type.

[0106] Figure 10a-10f yes Figure 5 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages. Figure 5 The Micro LED micro display chip is a double-layer heat-insulating coating type. Figure 5 The method for preparing the Micro LED micro display chip may include steps S1010 to S1070, which are described in detail below.

[0107] In step S1010 , a grid network is manufactured based on the fence structure 330 and the reflective layer 332 , and a first material (ie, a heat insulating material) is filled into a plurality of first grid holes 334 to obtain a first heat insulating layer 372 .

[0108] like Fig.10a As shown, a plurality of LED units 320 spaced apart from each other are arranged on one side of the driving panel 310. A first layer of fence structure is formed on the side of the driving panel 310 facing the LED units 320, and the outer wall of the first layer of fence structure is coated to form a reflective layer 332, so that the first layer of fence structure and the reflective layer 332 define a plurality of first grid holes 334, and the plurality of first grid holes 334 are respectively arranged around a plurality of LED countertops, and a first recessed area is formed between the LED countertops and the corresponding first grid holes 334. The reflective layer 332 is made of a heat conductive material, and the reflective layer 332 can conduct heat to the driving panel 310.

[0109] The plurality of first grid holes 334 are filled with a heat insulating material to obtain a first heat insulating layer 372. The thermal conductivity of the first heat insulating layer 372 may be, for example, 0.12 W / (m·K) or 0.05 W / (m·K). Exemplarily, the material of the first heat insulating layer 372 may be a combination of any one or more of the following materials: methyl methacrylate (MMA), polymethyl methacrylate (PMMA), epoxy resin, styrene, and polyurethane.

[0110] In step S1020, a transmissive reflective layer 390 is disposed above the plurality of first grid holes 334 and the first heat insulating layer 372, such as Fig.10b The transflective layer 390 transmits the light emitted by the LED unit 320 and reflects light of other colors.

[0111] The transmissive reflective layer 390 is a DBR layer made of inorganic materials. The DBR transmissive reflective layer 390 is formed by stacking inorganic materials with high and low refractive indices, which can reflect light upward and increase brightness. Inorganic materials have good thermal insulation properties, and the transmissive reflective layer 390 can further have a good thermal insulation effect on the materials on the upper and lower sides.

[0112] In step S1030, a second layer fence structure 338 having a plurality of second grid holes 336 is formed on the transmissive reflective layer 390, and a second light reflecting layer 394 is disposed at least on the sidewall of the second layer fence structure 338. The plurality of second grid holes 336 correspond to the plurality of first grid holes 334 one by one, such as Fig.10c shown.

[0113] In step S1040, the plurality of second grid holes 336 are filled with insulation material to obtain a first sub-insulation layer (i.e., the initial insulation layer 374). The first sub-insulation layer is filled in the second grid holes 336, and the top surface of the first sub-insulation layer is lower than the top surface of the second fence structure. Fig.10d shown.

[0114] In step S1050, a second recessed area 371 to be filled with a wavelength conversion layer is etched in the first sub-insulation layer. The second recessed area 371 is spaced apart from the LED unit 320 and the reflective layer 332. Each second recessed area 371 is located in a corresponding second grid hole 336. Fig.10e shown.

[0115] In step S1060, the second recessed area 371 is filled with a wavelength conversion layer 380, such as Fig.10f shown.

[0116] Since the wavelength conversion layer 380 is spaced apart from the LED unit 320 and the reflective layer 332 , the heat generated by the LED unit will be preferentially conducted to the driving panel through the reflective layer with good thermal conductivity and then dissipated.

[0117] In step S1070, a second sub-insulation layer is formed on the first sub-insulation layer, the second sub-insulation layer covers the wavelength conversion layer 380, the top surface of the second sub-insulation layer is flush with the top surface of the second fence structure, and the first sub-insulation layer and the second sub-insulation layer form a second insulation layer 374, so that the surface of the Micro LED micro display chip is flattened, and the manufacturing is completed. Figure 5 shown.

[0118] In the embodiment of the present application, a transmissive reflective layer is formed on the first fence structure, the transmissive reflective layer transmits the light emitted by the LED unit and reflects other colors of light; a second fence structure having a plurality of second grid holes is formed on the transmissive reflective layer; a second heat insulation layer is formed on the second fence structure, the second heat insulation layer has a plurality of second heat insulation units, each second heat insulation unit is filled in the corresponding second grid hole; a wavelength conversion layer is formed, including: a wavelength conversion layer is formed in the second heat insulation layer, each wavelength conversion unit is embedded in the corresponding second heat insulation unit. Since the heat insulation layer is arranged in the grid hole formed by the fence structure, the heat insulation layer is composed of a heat insulation material, and the heat insulation layer is divided into a first heat insulation layer under the DBR transmissive reflective layer and a second heat insulation layer above the DBR transmissive reflective layer. The wavelength conversion layer embedded in the second heat insulation layer is spaced apart from the LED unit, and the heat generated by the LED unit is preferentially conducted to the drive panel through the reflective layer with good thermal conductivity to be dissipated, and the DBR transmissive reflective layer has a further heat insulation effect on the heat of the LED unit. The embodiments of the present application can reduce the heat generated by the LED unit and transferred to the wavelength conversion layer, which helps to delay the aging of the wavelength conversion layer and increase the life of the LED chip.

[0119] Figure 11a-Figure 11f yes Figure 6 Schematic diagram of a cross-sectional structure of a Micro LED micro display chip at different preparation stages. Figure 6 The Micro LED micro display chip is a three-layer heat-insulating coating type. Along the light-emitting direction of the LED unit, the multiple grid holes can be divided into multiple first grid holes, and corresponding multiple second grid holes and multiple third grid holes. The heat insulation layer is divided into a first heat insulation layer, a second heat insulation layer and a third heat insulation layer, and the multiple LED units are correspondingly accommodated in the multiple first grid holes. The third layer of the fence structure is located between the first layer of the fence structure and the second layer of the fence structure, the first heat insulation layer is arranged in the first grid hole formed by the first layer of the fence structure, the second heat insulation layer is arranged in the second grid hole formed by the second layer of the fence structure, and the third heat insulation layer is arranged in the third grid hole formed by the third layer of the fence structure. Figure 6 The method for preparing a Micro LED micro display chip may include steps S1210 to S1270, which are described in detail below.

[0120] In step S1210, a grid network is manufactured based on the fence structure and the reflective layer, and a plurality of first grid holes are filled with a heat insulating material to obtain a first heat insulating layer.

[0121] like Fig.10aAs shown, a plurality of LED units 320 spaced apart from each other are arranged on one side of the driving panel 310. A first layer of fence structure is formed on the side of the driving panel 310 facing the LED units 320, and the outer wall of the first layer of fence structure is coated to form a reflective layer 332, so that the first layer of fence structure and the reflective layer 332 define a plurality of first grid holes 334, and the plurality of first grid holes 334 are respectively arranged around a plurality of LED countertops, and a first recessed area is formed between the LED countertops and the corresponding first grid holes 334. The reflective layer 332 is made of a heat conductive material, and the reflective layer 332 can conduct heat to the driving panel 310.

[0122] The plurality of first grid holes 334 are filled with a heat insulating material to obtain a first heat insulating layer 372. The thermal conductivity of the first heat insulating layer 372 may be, for example, 0.12 W / (m·K) or 0.05 W / (m·K). Exemplarily, the material of the first heat insulating layer 372 may be a combination of any one or more of the following materials: methyl methacrylate (MMA), polymethyl methacrylate (PMMA), epoxy resin, styrene, and polyurethane.

[0123] In step S1220, a transmissive reflective layer 390 is disposed above the plurality of first grid holes 334 and the first heat insulating layer 372, such as Fig.10b The transflective layer 390 transmits the light emitted by the LED unit 320 and reflects light of other colors.

[0124] The transmissive reflective layer 390 is a DBR layer made of inorganic materials. The DBR transmissive reflective layer 390 is formed by stacking inorganic materials with high and low refractive indices, which can reflect light upward and increase brightness. Inorganic materials have good thermal insulation properties, and the transmissive reflective layer 390 can further have a good thermal insulation effect on the materials on the upper and lower sides.

[0125] In step S1230, a heat insulating material is coated on the transmissive reflective layer 390 to obtain a third heat insulating layer 376, such as Fig.11a shown.

[0126] In step S1240, the third heat insulation layer 376 and the transmissive reflective layer 390 are etched to obtain a plurality of annular grooves 392. Each annular groove 392 penetrates the third heat insulation layer 376 and the transmissive reflective layer 390, and each annular groove 392 is arranged around the first grid hole 334, such as Fig.11b shown.

[0127] In step S1250, a reflective material is disposed on the sidewall of the annular groove 392 to form a third reflective layer 396. The third reflective layer 396 is heat-conductive and connected to the reflective layer 332. It should be noted that in this embodiment, the reflective layer 332 may also be referred to as the first reflective layer 332.

[0128] For example, Fig.11c As shown, metal sputtering can be performed on the sidewall of the annular groove 392 , and the metal covers the sidewall of the annular groove 392 and is connected to the underlying metal reflective layer 332 for heat conduction.

[0129] After the third light reflecting layer 396 is formed, the annular groove 392 is filled with a fence structure material to form a third fence structure 337. The third fence structure 337 has a plurality of third grid holes 335. The plurality of third grid holes 335 correspond to the plurality of first grid holes 334 one by one. Fig.11d shown.

[0130] A second layer fence structure 338 is formed on the third layer fence structure 337. Next, a second light reflecting layer 394 is formed at least on the sidewall of the second layer fence structure 338. The second light reflecting layer 394 and the third light reflecting layer 396 are connected to the light reflecting layer 332 for heat conduction. The second layer fence structure 338 has a plurality of second grid holes 336. The plurality of second grid holes 336 and the plurality of third grid holes 335 correspond to the plurality of first grid holes 334 one by one. Fig.11e shown.

[0131] In step S1260, a wavelength conversion layer 380 is formed on the second layer fence structure 338. For example, the wavelength conversion material layer is patterned in the plurality of second grid holes 336 to form the wavelength conversion layer 380. The wavelength conversion layer 380 is spaced apart from the reflective layer (such as the second reflective layer 394, the third reflective layer 396 and the reflective layer 332), such as Fig.11f shown.

[0132] Usually, the wavelength conversion layer can be patterned in a size ratio of 1% to 99%. Since the wavelength conversion layer 380 is spaced apart from the LED unit 320 and the reflective layer, the heat generated by the LED unit 320 will be preferentially conducted to the drive panel 310 through the reflective layer 332 with good thermal conductivity and then dissipated.

[0133] In step S1270, a second heat insulating layer 374 is formed on the wavelength conversion layer 380. The second heat insulating layer 374 fills the plurality of second grid holes 336 and wraps the wavelength conversion layer 380. The top surface of the second heat insulating layer 374 is flush with the top surface of the second fence structure 338, so that the surface of the display chip is flattened, and the manufacturing is completed. Figure 6 shown.

[0134] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A Micro LED micro display chip, characterized in that: include: Driver panel; A plurality of LED units are arranged on the driving panel, the plurality of LED units have a plurality of LED tables corresponding to each other, and each of the LED units can be driven individually by the driving panel; A fence structure having a plurality of grid holes, wherein the plurality of grid holes are respectively arranged around the plurality of LED countertops, and a recessed area is formed between the LED countertops and the corresponding grid holes; A heat insulation layer is arranged on the fence structure, wherein the heat insulation layer has a plurality of heat insulation units, and each of the heat insulation units is filled in the corresponding recessed area; The wavelength conversion layer includes a plurality of wavelength conversion units, each of which is embedded in the corresponding heat insulation unit, and each of which is spaced apart from the corresponding LED unit.

2. The Micro LED micro display chip according to claim 1, characterized in that: The heat insulation unit includes a second heat insulation unit, and the Micro LED micro display chip also includes: A transmissive reflective layer, the LED unit is arranged on a first side of the transmissive reflective layer, the second heat insulation unit is arranged on an opposite side of the first side of the transmissive reflective layer, each of the wavelength conversion units is embedded in the corresponding second heat insulation unit, and the transmissive reflective layer transmits the light emitted by the LED unit and reflects other color lights.

3. The Micro LED micro display chip according to claim 2, characterized in that: The heat insulation unit further includes a first heat insulation unit, and the first heat insulation unit is disposed on a first side of the transmissive reflective layer.

4. The Micro LED micro display chip according to claim 3, characterized in that: The heat insulation unit further includes a third heat insulation unit, which is disposed on an opposite side of the first side of the transmissive reflective layer and is located between the transmissive reflective layer and the second heat insulation unit.

5. The Micro LED micro display chip according to claim 4, characterized in that: The fence structure includes a first fence structure, a second fence structure and a third fence structure, the third fence structure is located between the first fence structure and the second fence structure, the first insulation unit is arranged in the grid holes formed by the first fence structure, the second insulation unit is arranged in the grid holes formed by the second fence structure, and the third insulation unit is arranged in the grid holes formed by the third fence structure.

6. The Micro LED micro display chip according to claim 1, characterized in that: The Micro LED micro display chip also includes: The reflective layer is at least arranged on the side wall of the grid hole, the reflective layer can conduct heat, and the wavelength conversion layer is spaced apart from the reflective layer.

7. The Micro LED micro display chip according to claim 6, characterized in that: The thermal conductivity of the light reflecting layer is greater than the thermal conductivity of the heat insulating layer.

8. The Micro LED micro display chip according to claim 1, characterized in that: The wavelength conversion unit includes a first wavelength conversion unit, the first wavelength conversion unit is embedded in the corresponding heat insulation unit, the LED unit emits a first color light, and the first wavelength conversion unit converts the first color light into a second color light.

9. The Micro LED micro display chip according to claim 8, characterized in that: The wavelength conversion unit further includes a second wavelength conversion unit, which is embedded in the corresponding heat insulation unit and converts the first color light into a third color light.

10. The Micro LED micro display chip according to claim 9, characterized in that: The wavelength conversion unit further includes a third wavelength conversion unit, which is embedded in the corresponding heat insulation unit and converts the first color light into a fourth color light.

11. A method for manufacturing a Micro LED micro display chip, characterized in that: include: Providing a drive panel; A plurality of LED units are formed on the driving panel, wherein the plurality of LED units have a plurality of LED tables corresponding to each other, and each of the LED units can be driven individually by the driving panel; Forming a fence structure having a plurality of grid holes, wherein the plurality of grid holes are respectively arranged around the plurality of LED countertops, and a recessed area is formed between the LED countertops and the corresponding grid holes; forming a heat insulation layer on the fence structure, wherein the heat insulation layer has a plurality of heat insulation units, and each of the heat insulation units is filled in the corresponding recessed area; A wavelength conversion layer is formed, wherein the wavelength conversion layer includes a plurality of wavelength conversion units, each of the wavelength conversion units is embedded in the corresponding heat insulation unit, and each of the wavelength conversion units is spaced apart from the corresponding LED unit.

12. The method according to claim 11, characterized in that The forming of the fence structure having a plurality of grid holes comprises: Forming a first layer of fence structure having a plurality of first grid holes, wherein the plurality of first grid holes are respectively arranged around the plurality of LED tabletops, and a first recessed area is formed between the LED tabletops and the corresponding first grid holes; The method further comprises: forming a transmissive reflective layer on the first fence structure, wherein the transmissive reflective layer transmits the light emitted by the LED unit and reflects light of other colors; forming a second layer of fence structure having a plurality of second grid holes on the transmissive reflective layer; forming a second heat-insulating layer on the second fence structure, wherein the second heat-insulating layer has a plurality of second heat-insulating units, and each of the second heat-insulating units is filled in a corresponding second grid hole; The forming of the wavelength conversion layer comprises: The wavelength conversion layer is formed in the second heat insulation layer, and each of the wavelength conversion units is embedded in the corresponding second heat insulation unit.

13. The method according to claim 12, characterized in that The step of forming a heat insulation layer on the fence structure comprises: A first heat insulation layer is formed on the first fence structure, wherein the first heat insulation layer has a plurality of first heat insulation units, and each of the first heat insulation units is filled in a corresponding first recessed area.

14. The method according to claim 12, characterized in that The forming of the second heat insulation layer on the second fence structure comprises: forming a first sub-insulation layer on the second-layer fence structure, wherein the first sub-insulation layer is filled in the second grid holes, and a top surface of the first sub-insulation layer is lower than a top surface of the second-layer fence structure; forming a plurality of second recessed areas on the first sub-insulation layer, each of the second recessed areas being located in a corresponding second grid hole; The forming of the wavelength conversion layer comprises: forming the wavelength conversion layer on the first sub-insulation layer, wherein each of the wavelength conversion units is filled in the corresponding second recessed area; forming a second sub-insulation layer on the first sub-insulation layer, wherein the second sub-insulation layer covers the wavelength conversion layer, and a top surface of the second sub-insulation layer is flush with a top surface of the second fence structure; The first sub-insulation layer and the second sub-insulation layer form the second insulation layer.

15. The method according to claim 12, characterized in that Before forming a second layer of fence structure having a plurality of second grid holes on the transmissive reflective layer, the method further comprises: forming a third heat insulation layer on the transmissive reflective layer, wherein the third heat insulation layer is located between the transmissive reflective layer and the second heat insulation layer; forming a plurality of annular grooves on the third heat insulation layer, each of the annular grooves penetrates the third heat insulation layer and the transmissive reflective layer, and each of the annular grooves is arranged around the first grid hole; A third fence structure is formed on the first fence structure. The third fence structure is filled in each of the annular grooves. The third fence structure is located between the first fence structure and the second fence structure.

16. The method according to claim 15, characterized in that After forming a third layer of fence structure on the first layer of fence structure, the method further includes: forming the second-layer fence structure on the third-layer fence structure; The second heat insulation layer is formed on the third heat insulation layer.

17. The method according to claim 11, characterized in that Before forming the heat insulation layer on the fence structure, the method further comprises: A reflective layer is formed on the fence structure, the reflective layer is at least arranged on the side wall of the grid hole, the reflective layer can be heat-conductive, and the wavelength conversion layer is spaced apart from the reflective layer; Wherein, the thermal conductivity of the reflective layer is greater than the thermal conductivity of the heat insulating layer.

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