Light emitting device for improving thermal attenuation and packaging method thereof

Abstract

The invention provides a light-emitting device for improving thermal attenuation and a packaging method thereof, and belongs to the technical field of photoelectron manufacturing. The light-emitting device comprises a bracket, a light-emitting diode, a heat insulation layer and a fluorescent powder layer, the light emitting diode and the heat insulation layer are located on the same surface of the support, the heat insulation layer wraps the light emitting diode, the fluorescent powder layer is located on the surface, away from the support, of the heat insulation layer, and the fluorescent powder layer is opposite to the light emitting diode. The embodiment of the invention can improve the problem that the fluorescent powder layer is easily attenuated after being heated, and improve the light-emitting effect of the light-emitting device.

Description

Technical Field

[0001] The present disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a light-emitting device with improved thermal attenuation and a packaging method thereof. Background Art

[0002] Light Emitting Diode (LED) is widely used in various indication, display, decoration, backlight, general lighting and other fields. Among them, SMD (Surface Mounted Devices) LED occupies a large market share in various lighting applications due to its mature technology and low cost.

[0003] In the related art, SMD LED generally includes a bracket, a light-emitting diode and a phosphor layer, wherein the electrode of the light-emitting diode is bonded to the circuit of the bracket, and the phosphor layer is located on the surface of the bracket and covers the light-emitting diode. The phosphor layer is used to convert the emitted light of the light-emitting diode into light of a desired color.

[0004] However, phosphors have thermal decay properties, and the higher the temperature, the greater the decay. Since the phosphor layer covers the light-emitting diode, that is, the phosphor layer is in close contact with the light-emitting diode, when the light-emitting device is lit, as the temperature gradually increases, the phosphor layer will gradually decay, thus causing the light color of the light-emitting device to gradually change, resulting in reduced brightness and color shift problems. Summary of the invention

[0005] The embodiments of the present disclosure provide a light-emitting device with improved thermal attenuation and a packaging method thereof, which can improve the problem of easy attenuation of the phosphor layer due to heat and enhance the light-emitting effect of the light-emitting device. The technical solution is as follows:

[0006] On the one hand, an embodiment of the present disclosure provides a light-emitting device, which includes: a bracket, a light-emitting diode, a thermal insulation layer and a phosphor layer; the light-emitting diode and the thermal insulation layer are located on the same surface of the bracket, and the thermal insulation layer wraps the light-emitting diode, and the phosphor layer is located on the surface of the thermal insulation layer away from the bracket, and the phosphor layer is opposite to the light-emitting diode.

[0007] In an implementation of the present disclosure, the material used to prepare the thermal insulation layer includes at least one of silica gel, epoxy resin and modified resin.

[0008] In an implementation of the present disclosure, the ratio of the thickness of the light-emitting diode to the thickness of the thermal insulation layer is 0.6 to 0.98.

[0009] In an implementation of the present disclosure, the difference between the thickness of the heat insulation layer and the thickness of the light emitting diode is 0.05 mm to 0.1 mm.

[0010] In an implementation of the present disclosure, an orthographic projection of the light emitting diode on the surface of the bracket is located within an orthographic projection of the phosphor layer on the surface of the bracket.

[0011] In an implementation of the present disclosure, the phosphor layer includes: a sealing glue layer and phosphor particles, and the phosphor particles are embedded in the sealing glue layer.

[0012] In an implementation of the present disclosure, the material for preparing the sealing glue layer includes at least one of silica gel, epoxy resin, modified resin, aluminate, silicate, nitride and chloride.

[0013] In one implementation of the present disclosure, the bracket includes: a circuit board and an annular enclosure, the annular enclosure is located on the surface of the circuit board, and the annular enclosure and the circuit board form a receiving groove; the light-emitting diode is located on the surface of the circuit board and is located in the receiving groove, the thermal insulation layer is located in the receiving groove, the phosphor layer is located in the receiving groove and is stacked on the thermal insulation layer, and the groove depth of the receiving groove is greater than or equal to the sum of the thickness of the phosphor layer and the thickness of the thermal insulation layer.

[0014] In one implementation of the present disclosure, the light-emitting device further includes a heat dissipation layer, wherein the heat dissipation layer is located between the thermal insulation layer and the phosphor layer, and the side wall of the heat dissipation layer is connected to the annular enclosure; the heat dissipation layer includes a graphene layer; or, the heat dissipation layer includes a metal layer, and the metal layer is mesh-shaped.

[0015] On the other hand, the embodiments of the present disclosure also provide a packaging method for a light-emitting device, the packaging method comprising: fixing a light-emitting diode on the surface of a bracket; forming a thermal insulation layer on the surface of the bracket, the thermal insulation layer and the light-emitting diode are located on the same surface of the bracket, and the thermal insulation layer wraps the light-emitting diode; forming a phosphor layer on the surface of the thermal insulation layer away from the bracket, the phosphor layer is opposite to the light-emitting diode.

[0016] The beneficial effects brought by the technical solution provided by the embodiments of the present disclosure include at least:

[0017] The light-emitting device provided in the embodiment of the present disclosure is provided with a heat-insulating layer on the bracket, so that the heat-insulating layer wraps the light-emitting diode on the bracket, so that the heat-insulating layer isolates the light-emitting diode and the phosphor layer, and achieves the purpose of isolating and protecting the light-emitting diode and the phosphor layer by the heat-insulating layer. Since there is no direct contact between the phosphor layer and the light-emitting diode, the phosphor layer is prevented from being directly heated by the light-emitting diode, and the problem of the phosphor layer gradually attenuating as the temperature gradually rises when the light-emitting diode is lit is prevented. Therefore, the problems of gradual change in light color, reduction in brightness and color deviation can be avoided, thereby improving the light-emitting effect of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 is a schematic structural diagram of a light-emitting device provided by an embodiment of the present disclosure;

[0020] Figure 2 is a structural schematic diagram of a light-emitting device provided by an embodiment of the present disclosure;

[0021] Figure 3 is a flow chart of a packaging method of a light emitting device provided by an embodiment of the present disclosure;

[0022] Figure 4 is a packaging state diagram of a light emitting device provided by an embodiment of the present disclosure;

[0023] Figure 5 This is a packaging state diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0024] The descriptions of the marks in the figure are as follows:

[0025] 10. bracket; 11. circuit board; 12. annular enclosure; 13. receiving groove;

[0026] 20. Light emitting diode;

[0027] 30. Thermal insulation layer;

[0028] 40. phosphor layer; 41. sealing glue layer; 42. phosphor particles;

[0029] 50. Heat dissipation layer. DETAILED DESCRIPTION

[0030] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0031] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons with ordinary skills in the field to which the present disclosure belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity limitation, but indicate the existence of at least one. Words such as "include" or "comprise" and similar words mean that the elements or objects appearing before "include" or "comprise" include the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right", "top", "bottom" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0032] Figure 1 Schematic diagram of a light emitting device provided by an embodiment of the present disclosure. Figure 1 As shown, the light emitting device includes: a bracket 10, a light emitting diode 20, a heat insulation layer 30 and a phosphor layer 40.

[0033] like Figure 1 As shown, the LED 20 and the heat insulating layer 30 are located on the same surface of the bracket 10 , and the heat insulating layer 30 wraps the LED 20 . The phosphor layer 40 is located on the surface of the heat insulating layer 30 away from the bracket 10 , and the phosphor layer 40 is opposite to the LED 20 .

[0034] The light-emitting device provided in the embodiment of the present disclosure is provided with a heat-insulating layer 30 on the bracket 10, so that the heat-insulating layer 30 wraps the light-emitting diode 20 on the bracket 10, so that the heat-insulating layer 30 isolates the light-emitting diode 20 from the phosphor layer 40, and achieves the purpose of isolating and protecting the light-emitting diode 20 and the phosphor layer 40 by the heat-insulating layer 30. Since there is no direct contact between the phosphor layer 40 and the light-emitting diode 20, the phosphor layer 40 is prevented from being directly heated by the light-emitting diode 20, and the problem of the phosphor layer 40 gradually attenuating as the temperature gradually rises when the light-emitting diode 20 is lit is prevented. Therefore, the problems of gradual change of light color, reduction of brightness and color deviation can be avoided, thereby improving the light-emitting effect of the light-emitting device.

[0035] Alternatively, if Figure 1As shown, the preparation material of the heat insulation layer 30 includes at least one of silica gel, epoxy resin and modified resin.

[0036] Illustratively, the light transmittance of silica gel is 80% to 96%, and the high temperature resistance of silica gel is 200°C to 250°C.

[0037] Exemplarily, the light transmittance of the epoxy resin is 80% to 95%, and the high temperature resistance of the epoxy resin is 180°C to 310°C.

[0038] Illustratively, the light transmittance of the modified resin is 85% to 98%, and the high temperature resistance of the modified resin is 200°C to 1000°C.

[0039] The above materials all have high light transmittance and high temperature resistance, so the heat insulation layer 30 made of the above materials will not absorb much light emitted by the light emitting diode 20, and can ensure the brightness of the light. The heat insulation layer 30 has good high temperature resistance and is not easily deformed by heat to affect the phosphor layer 40 above. The heat insulation layer 30 also has a good heat insulation effect, which prevents the phosphor layer 40 from being thermally attenuated during the light emission process of the light emitting diode 20, and improves the stability of the phosphor layer 40.

[0040] Exemplarily, the heat insulating layer 30 includes a silicone layer and a modified resin layer stacked in sequence.

[0041] Alternatively, if Figure 1 As shown, the ratio of the thickness of the light emitting diode 20 to the thickness of the heat insulating layer 30 is 0.6 to 0.98.

[0042] By controlling the ratio of the thickness of the light emitting diode 20 to the thickness of the heat insulating layer 30 within the above range, it is possible to avoid the thickness of the heat insulating layer 30 being too small, which would fail to cover the light emitting diode 20, thereby transferring the heat of the light emitting diode 20 to the phosphor layer 40. At the same time, it is also possible to avoid the thickness of the heat insulating layer 30 being too large, which would cause the heat insulating layer 30 to absorb more light and affect the light output brightness of the light emitting diode 20.

[0043] Exemplarily, the ratio of the thickness of the light emitting diode 20 to the thickness of the heat insulating layer 30 is 0.85.

[0044] Optionally, the difference between the thickness of the heat insulation layer 30 and the thickness of the light emitting diode 20 is 0.05 mm to 0.1 mm.

[0045] This ensures that there is a sufficiently thick insulation layer 30 between the top surface of the insulation layer 30 and the top surface of the LED 20 to isolate the phosphor layer 40 from the LED 20; it also prevents the insulation layer 30 between the LED 20 and the phosphor from being too thick and affecting the light output of the LED 20.

[0046] Exemplarily, the difference between the thickness of the heat insulating layer 30 and the thickness of the light emitting diode 20 is 0.08 mm.

[0047] Alternatively, if Figure 1 As shown, the orthographic projection of the light emitting diode 20 on the surface of the support 10 is located within the orthographic projection of the phosphor layer 40 on the surface of the support 10 .

[0048] In this way, the phosphor layer 40 completely covers the light emitting diode 20 , ensuring that the light emitted by the light emitting diode 20 can pass through the phosphor layer 40 before being emitted from the light emitting device.

[0049] In the embodiment of the present disclosure, the light emitting diode 20 is opposite to the central area of ​​the phosphor layer 40, which can maximize the guarantee that the light emitted obliquely from the light emitting diode 20 will also be incident on the phosphor layer 40, and then emitted after being converted by the phosphor layer 40, thereby ensuring the luminous effect of the light emitting device.

[0050] Exemplarily, the ratio of the area of ​​the orthographic projection of the light emitting diode 20 on the surface of the support 10 to the area of ​​the orthographic projection of the phosphor layer 40 on the surface of the support 10 is 1 / 5 to 2 / 3.

[0051] Alternatively, if Figure 1 As shown, the phosphor layer 40 includes: a sealing glue layer 41 and phosphor particles 42 , and the phosphor particles 42 are embedded in the sealing glue layer 41 .

[0052] The phosphor particles 42 are embedded in the sealing and potting layer 41, so that the phosphor particles 42 will not directly contact the heat insulation layer 30, that is, a sealing and potting layer 41 is provided between the phosphor particles 42 and the heat insulation layer 30. In this way, even if the light-emitting diode 20 works for a long time and the heat insulation layer 30 is also at a high temperature, the phosphor particles 42 will not be directly affected by the heat transferred from the heat insulation layer 30, but will be transferred through the sealing and potting layer 41, thereby further avoiding the problem of heat attenuation of the phosphor particles 42 and improving the stability of the light-emitting device.

[0053] Optionally, the sealing glue layer 41 is made of at least one of silica gel, epoxy resin, modified resin, aluminate, silicate, nitride and chloride.

[0054] Illustratively, the light transmittance of silica gel is 80% to 96%, and the high temperature resistance of silica gel is 200°C to 250°C.

[0055] Exemplarily, the light transmittance of the epoxy resin is 80% to 95%, and the high temperature resistance of the epoxy resin is 180°C to 310°C.

[0056] Illustratively, the light transmittance of the modified resin is 85% to 98%, and the high temperature resistance of the modified resin is 200°C to 1000°C.

[0057] Illustratively, the light transmittance of the aluminate glass is 80% to 90%, and the high temperature resistance of the aluminate glass is 800°C to 1000°C.

[0058] Exemplarily, the light transmittance of silicate glass is 82% to 90%, and the high temperature resistance of silicate glass is 1000°C to 1300°C.

[0059] Exemplarily, the nitride may be aluminum nitride, the light transmittance of aluminum nitride is 70% to 85%, and the high temperature resistance of aluminum nitride is 1500° C. to 2000° C.

[0060] The above materials all have high light transmittance and high temperature resistance, so the sealing glue layer 41 made of the above materials will not absorb much light emitted by the light-emitting diode 20, and can ensure the brightness of the light. The sealing glue layer 41 has good high temperature resistance and is not easily deformed by heat to affect the internal phosphor particles 42. The sealing glue layer 41 also has a good heat insulation effect, which prevents the phosphor particles 42 from being attenuated by heat during the light-emitting process of the light-emitting diode 20, and improves the stability of the phosphor layer 40.

[0061] Exemplarily, the sealing glue layer 41 includes a silicone layer.

[0062] Alternatively, if Figure 1 As shown, the bracket 10 includes: a circuit board 11 and an annular enclosure 12 , the annular enclosure 12 is located on the surface of the circuit board 11 , and the annular enclosure 12 and the circuit board 11 form a receiving groove 13 .

[0063] Exemplarily, the annular enclosure 12 can be made of a material that is easy to dissipate heat, for example, an annular enclosure 12 made of silicon nitride, which is helpful to accelerate the heat dissipation of the light-emitting diode 20 and avoid excessive temperature during the operation of the light-emitting device.

[0064] like Figure 1 As shown, the light-emitting diode 20 is located on the surface of the circuit board 11, and the light-emitting diode 20 is located in the receiving groove 13, the heat insulation layer 30 is located in the receiving groove 13, the phosphor layer 40 is located in the receiving groove 13, and the phosphor layer 40 is stacked on the heat insulation layer 30.

[0065] The annular enclosure 12 and the circuit board 11 are provided to form a receiving groove 13, so that the light-emitting diode 20, the heat insulation layer 30 and the phosphor layer 40 are confined in the receiving groove 13 to prevent the film layer from being deformed by heat.

[0066] The depth of the receiving groove 13 is greater than or equal to the sum of the thickness of the phosphor layer 40 and the thickness of the heat insulation layer 30 .

[0067] By making the groove depth of the receiving groove 13 large enough to accommodate the phosphor layer 40 and the insulation layer 30, the phosphor layer 40 is prevented from protruding from the receiving groove 13, thereby limiting the total thickness of the film layer filled in the receiving groove 13 and preventing the film layer from being too thick and absorbing more light.

[0068] Exemplarily, the depth of the receiving groove 13 is equal to the sum of the thickness of the phosphor layer 40 and the thickness of the heat insulation layer 30 .

[0069] Figure 2 Schematic diagram of a light emitting device provided by an embodiment of the present disclosure. Figure 2 As shown, the light emitting device further includes a heat dissipation layer 50 , which is located between the heat insulation layer 30 and the phosphor layer 40 , and a side wall of the heat dissipation layer 50 is connected to the annular enclosure 12 .

[0070] By setting a heat dissipation layer 50 between the thermal insulation layer 30 and the phosphor layer 40 and extending the heat dissipation layer 50 to the annular enclosure 12, after the heat dissipation layer 50 absorbs heat, it can transfer the heat laterally to the annular enclosure 12 for heat dissipation, thereby preventing a large amount of heat from being transferred upward to the phosphor layer 40, thereby avoiding thermal attenuation of the phosphor layer 40.

[0071] In the first implementation of the present disclosure, the heat dissipation layer 50 includes a graphene layer. The light transmittance of graphene can reach 97.7%. Using the graphene layer as the heat dissipation layer 50 can also avoid setting more film layers to absorb more light, thereby ensuring the brightness of the light emitting device.

[0072] In addition, the thermal conductivity of graphene can reach 5300 W / m·K. Graphene also has high thermal conductivity. Therefore, using graphene as the heat dissipation layer 50 is conducive to transferring the heat generated by the light-emitting diode 20 to the annular enclosure 12, thereby avoiding the heat transfer upward to the phosphor layer 40 to the greatest extent.

[0073] In another implementation of the present disclosure, the heat dissipation layer 50 includes a metal layer, and the metal layer is in a mesh shape.

[0074] Since metal has good heat dissipation performance, using a metal layer as the heat dissipation layer 50 is beneficial for transferring the heat generated by the light emitting diode 20 to the annular enclosure 12 , thereby preventing the heat from being transferred upward to the phosphor layer 40 .

[0075] Meanwhile, metal materials absorb more light, therefore, the metal layer is configured to be a mesh, that is, a plurality of hollow structures arranged at intervals are provided on the metal layer to facilitate light transmission, thereby ensuring the light transmittance of the heat dissipation layer 50 .

[0076] Optionally, the light emitting diode 20 includes: a substrate, an epitaxial layer, an insulating layer, a transparent conductive layer and an electrode. The epitaxial layer is located on the substrate, the transparent conductive layer is located on the surface of the epitaxial layer, the electrode is located on the surface of the transparent conductive layer away from the epitaxial layer, the insulating layer is located on the surfaces of the epitaxial layer and the transparent conductive layer, and the insulating layer exposes the electrode so that the electrode can be electrically connected to the circuit board 11.

[0077] Optionally, the substrate is a sapphire substrate. The sapphire substrate has a relatively high light transmittance, that is, the substrate is a transparent substrate. In addition, the sapphire material is relatively hard and has relatively stable chemical properties, so that the light-emitting diode 20 has good light-emitting effect and stability.

[0078] In the embodiment of the present disclosure, the epitaxial layer includes a first semiconductor layer, a multi-quantum well layer, and a second semiconductor layer stacked in sequence on a substrate, and a surface of the second semiconductor layer has a groove exposing the first semiconductor layer.

[0079] Exemplarily, a portion of the electrode is in the groove, and another portion of the electrode is located on the transparent conductive layer on the second semiconductor layer.

[0080] Exemplarily, the insulating layer is located on the surface of the second semiconductor layer, and the insulating layer extends into the groove.

[0081] In the embodiment of the present disclosure, one of the first semiconductor layer and the second semiconductor layer is a p-type layer, and the other of the first semiconductor layer and the second semiconductor layer is an n-type layer.

[0082] Exemplarily, the first semiconductor layer is an n-type layer, and the second semiconductor layer is a p-type layer.

[0083] Optionally, the first semiconductor layer is a silicon-doped n-type GaN layer, and the thickness of the n-type GaN layer may be 0.5 μm to 3 μm.

[0084] Optionally, the multi-quantum well layer includes alternately grown InGaN quantum well layers and GaN quantum barrier layers. Wherein, the multi-quantum well layer may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0085] As an example, in the embodiment of the present disclosure, the multi-quantum well layer includes five periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0086] Optionally, the thickness of the multi-quantum well layer may be 150 nm to 200 nm.

[0087] Optionally, the second semiconductor layer is a magnesium-doped p-type GaN layer. The thickness of the p-type GaN layer may be 0.5 μm to 3 μm.

[0088] Exemplarily, the insulating layer may be a distributed Bragg reflector (DBR layer), which includes a plurality of periodically alternately stacked SiO2 layers and TiO2 layers. The number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.

[0089] The thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0090] In addition to the passivation effect, the DBR layer is also used to reflect the light emitted from the multi-quantum well layer to the DBR layer to the substrate, thereby improving the light extraction effect.

[0091] Exemplarily, the insulating layer includes at least one of an aluminum oxide layer and a silicon oxide layer.

[0092] Illustratively, the electrode is a first Al layer, a first Ti layer, a second Al layer, a second Ti layer and an Au layer stacked in sequence.

[0093] The thickness of the first Al layer is 8000 angstroms to 12000 angstroms, the thickness of the first Ti layer is 100 angstroms to 500 angstroms, the thickness of the second Al layer is 8000 angstroms to 12000 angstroms, the thickness of the second Ti layer is 500 angstroms to 1500 angstroms, and the thickness of the Au layer is 2000 angstroms to 5000 angstroms.

[0094] For example, the thickness of the first Al layer is 10000 angstroms, the thickness of the first Ti layer is 200 angstroms, the thickness of the second Al layer is 10000 angstroms, the thickness of the second Ti layer is 1000 angstroms, and the thickness of the Au layer is 3000 angstroms.

[0095] Optionally, the transparent conductive layer is an indium tin oxide (ITO) layer. The ITO layer has good transmittance and low resistivity. Using the ITO layer as the transparent conductive layer can allow more light to be transmitted from the transparent conductive layer, thereby ensuring the effect; at the same time, due to the low resistivity, it is also convenient for carrier conduction and improves injection efficiency.

[0096] Optionally, the transparent conductive layer is an indium zinc oxide (IZO) layer. The indium zinc oxide layer has good transmittance and low resistivity. Using the indium zinc oxide layer as the transparent conductive layer can allow more light to be transmitted from the transparent conductive layer, thereby ensuring the effect; at the same time, due to the low resistivity, it is also convenient for carrier conduction and improves injection efficiency.

[0097] Exemplarily, the thickness of the transparent conductive layer may be 3000 angstroms to 6000 angstroms. For example, the thickness of the transparent conductive layer is 4000 angstroms.

[0098] Figure 3 FIG. 1 is a flow chart of a packaging method for a light emitting device provided by an embodiment of the present disclosure. Figure 3 As shown, the packaging method includes:

[0099] S11 : Fixing the light emitting diode 20 on the surface of the bracket 10 .

[0100] S12 : forming a heat insulating layer 30 on the surface of the bracket 10 .

[0101] The heat insulating layer 30 and the light emitting diode 20 are located on the same surface of the bracket 10 , and the heat insulating layer 30 wraps the light emitting diode 20 .

[0102] S13 : forming a phosphor layer 40 on the surface of the heat insulation layer 30 away from the bracket 10 .

[0103] The phosphor layer 40 is opposite to the light emitting diode 20 .

[0104] The light-emitting device packaged by this packaging method is provided with a heat-insulating layer 30 on the bracket 10, so that the heat-insulating layer 30 wraps the light-emitting diode 20 on the bracket 10, so that the heat-insulating layer 30 isolates the light-emitting diode 20 from the phosphor layer 40, and achieves the purpose of isolating and protecting the light-emitting diode 20 and the phosphor layer 40 by the heat-insulating layer 30. Since there is no direct contact between the phosphor layer 40 and the light-emitting diode 20, the phosphor layer 40 is prevented from being directly heated by the light-emitting diode 20, and the problem of the phosphor layer 40 gradually attenuating as the temperature gradually rises when the light-emitting diode 20 is lit is prevented. Therefore, the problems of gradual change of light color, reduction of brightness and color deviation can be avoided, thereby improving the light-emitting effect of the light-emitting device.

[0105] like Figure 4 As shown, step S11 may include: binding a blue light emitting diode 20 containing high temperature resistant magnetic powder on the bracket 10, wherein the bottom welding layer of the bound blue light emitting diode 20 melts under high temperature conditions of 150°C or above, and contacts the metal layer of the circuit board 11 on the bracket 10, and as the temperature decreases, the blue light emitting diode 20 is bound to the circuit board 11.

[0106] The bracket 10 in step S11 may include: a circuit board 11 and an annular enclosure 12 , wherein the annular enclosure 12 is located on the surface of the circuit board 11 , and the annular enclosure 12 and the circuit board 11 form a receiving groove 13 .

[0107] Exemplarily, the annular enclosure 12 may be made of a material that is easy to dissipate heat, for example, an annular enclosure 12 made of silicon nitride.

[0108] like Figure 1 As shown, the light-emitting diode 20 is located on the surface of the circuit board 11, and the light-emitting diode 20 is located in the receiving groove 13, the heat insulation layer 30 is located in the receiving groove 13, the phosphor layer 40 is located in the receiving groove 13, and the phosphor layer 40 is stacked on the heat insulation layer 30.

[0109] The depth of the receiving groove 13 is greater than or equal to the sum of the thickness of the phosphor layer 40 and the thickness of the heat insulation layer 30 .

[0110] The light emitting diode 20 in step S11 includes: a substrate, an epitaxial layer, an insulating layer, a transparent conductive layer and an electrode. The epitaxial layer is located on the substrate, the transparent conductive layer is located on the surface of the epitaxial layer, the electrode is located on the surface of the transparent conductive layer away from the epitaxial layer, the insulating layer is located on the surface of the epitaxial layer and the transparent conductive layer, and the insulating layer exposes the electrode so that the electrode can be electrically connected to the circuit board 11.

[0111] Optionally, the substrate is a sapphire substrate. The sapphire substrate has a relatively high light transmittance, that is, the substrate is a transparent substrate.

[0112] In the embodiment of the present disclosure, the epitaxial layer includes a first semiconductor layer, a multi-quantum well layer, and a second semiconductor layer stacked in sequence on a substrate, and a surface of the second semiconductor layer has a groove exposing the first semiconductor layer.

[0113] Exemplarily, a portion of the electrode is in the groove, and another portion of the electrode is located on the transparent conductive layer on the second semiconductor layer.

[0114] Exemplarily, the insulating layer is located on the surface of the second semiconductor layer, and the insulating layer extends into the groove.

[0115] In the embodiment of the present disclosure, one of the first semiconductor layer and the second semiconductor layer is a p-type layer, and the other of the first semiconductor layer and the second semiconductor layer is an n-type layer.

[0116] Exemplarily, the first semiconductor layer is an n-type layer, and the second semiconductor layer is a p-type layer.

[0117] Optionally, the first semiconductor layer is a silicon-doped n-type GaN layer, and the thickness of the n-type GaN layer may be 0.5 μm to 3 μm.

[0118] Optionally, the multi-quantum well layer includes alternately grown InGaN quantum well layers and GaN quantum barrier layers. Wherein, the multi-quantum well layer may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0119] As an example, in the embodiment of the present disclosure, the multi-quantum well layer includes five periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0120] Optionally, the thickness of the multi-quantum well layer may be 150 nm to 200 nm.

[0121] Optionally, the second semiconductor layer is a magnesium-doped p-type GaN layer. The thickness of the p-type GaN layer may be 0.5 μm to 3 μm.

[0122] For example, the insulating layer may be a DBR layer, wherein the thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0123] Exemplarily, the insulating layer includes at least one of an aluminum oxide layer and a silicon oxide layer.

[0124] Illustratively, the electrode is a first Al layer, a first Ti layer, a second Al layer, a second Ti layer and an Au layer stacked in sequence.

[0125] The thickness of the first Al layer is 8000 angstroms to 12000 angstroms, the thickness of the first Ti layer is 100 angstroms to 500 angstroms, the thickness of the second Al layer is 8000 angstroms to 12000 angstroms, the thickness of the second Ti layer is 500 angstroms to 1500 angstroms, and the thickness of the Au layer is 2000 angstroms to 5000 angstroms.

[0126] Optionally, the transparent conductive layer is an indium tin oxide layer or an indium zinc oxide layer.

[0127] Exemplarily, the thickness of the transparent conductive layer may be 3000 angstroms to 6000 angstroms. For example, the thickness of the transparent conductive layer is 4000 angstroms.

[0128] like Figure 5 As shown, step S12 may include: using a precision dispensing machine to evenly cover the bottom of the bracket 10 with the prepared material of the heat insulation layer 30, with a height of 0.05mm to 0.1mm above the blue light emitting diode 20. Then, the heat insulation layer 30 is bonded to the bracket 10 by curing at a high temperature of 150°C or above.

[0129] Exemplarily, the material used to prepare the heat insulation layer 30 includes at least one of silica gel, epoxy resin and modified resin.

[0130] like Figure 1 As shown, step S13 may include: using a precision dispensing machine to evenly dispense a mixture of the preparation material of the sealing glue layer 41 and the phosphor particles 42 on the top of the thermal insulation layer 30, and controlling the height of the film layer to be flush with the top of the bracket 10. Then, by curing at a high temperature of 150°C or above, the phosphor layer 40 is bonded to the bracket 10.

[0131] The above description is only an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A light emitting device, characterized in that: The light-emitting device comprises: a bracket (10), a light-emitting diode (20), a heat-insulating layer (30) and a phosphor layer (40); The light-emitting diode (20) and the heat-insulating layer (30) are located on the same surface of the bracket (10), and the heat-insulating layer (30) wraps the light-emitting diode (20); the phosphor layer (40) is located on a surface of the heat-insulating layer (30) away from the bracket (10), and the phosphor layer (40) is opposite to the light-emitting diode (20).

2. The light emitting device according to claim 1, characterized in that: The material used to prepare the heat insulation layer (30) includes at least one of silica gel, epoxy resin and modified resin.

3. The light emitting device according to claim 1, characterized in that: The ratio of the thickness of the light emitting diode (20) to the thickness of the heat insulation layer (30) is 0.6 to 0.

98.

4. The light emitting device according to claim 3, characterized in that: The difference between the thickness of the heat insulation layer (30) and the thickness of the light emitting diode (20) is 0.05 mm to 0.1 mm.

5. The light emitting device according to claim 1, characterized in that: The orthographic projection of the light emitting diode (20) on the surface of the bracket (10) is located within the orthographic projection of the phosphor layer (40) on the surface of the bracket (10).

6. The light emitting device according to any one of claims 1 to 5, characterized in that: The phosphor layer (40) comprises: a sealing glue layer (41) and phosphor particles (42), wherein the phosphor particles (42) are embedded in the sealing glue layer (41).

7. The light emitting device according to claim 6, characterized in that: The material for preparing the sealing glue layer (41) includes at least one of silica gel, epoxy resin, modified resin, aluminate, silicate, nitride and chloride.

8. The light emitting device according to any one of claims 1 to 5, characterized in that: The bracket (10) comprises: a circuit board (11) and an annular enclosure (12), wherein the annular enclosure (12) is located on the surface of the circuit board (11), and the annular enclosure (12) and the circuit board (11) form a receiving groove (13); The light emitting diode (20) is located on the surface of the circuit board (11) and is located in the receiving groove (13); the heat insulating layer (30) is located in the receiving groove (13); the phosphor layer (40) is located in the receiving groove (13) and is stacked on the heat insulating layer (30); and the groove depth of the receiving groove (13) is greater than or equal to the sum of the thickness of the phosphor layer (40) and the thickness of the heat insulating layer (30).

9. The light emitting device according to claim 8, characterized in that: The light-emitting device further comprises a heat dissipation layer (50), wherein the heat dissipation layer (50) is located between the heat insulation layer (30) and the phosphor layer (40), and a side wall of the heat dissipation layer (50) is connected to the annular enclosure (12); The heat dissipation layer (50) comprises a graphene layer; or, The heat dissipation layer (50) comprises a metal layer, and the metal layer is in a mesh shape.

10. A packaging method for a light emitting device, characterized in that: The packaging method comprises: Fixing the light emitting diode on the surface of the bracket; A heat insulation layer is formed on the surface of the bracket, wherein the heat insulation layer and the light emitting diode are located on the same surface of the bracket, and the heat insulation layer wraps the light emitting diode; A phosphor layer is formed on a surface of the heat insulation layer away from the bracket, and the phosphor layer is opposite to the light emitting diode.

Images