Parameter adjustment method and device for high-precision laser etching

Abstract

The present invention relates to the field of laser etching technology, and discloses a parameter adjustment method and device for high-precision laser etching, the method comprising: obtaining basic parameters and preliminary processing parameters of a processing material; according to the preliminary processing parameters, controlling equipment to prepare samples to obtain a processing template of the processing material, and performing an etching depth measurement operation on the photolithography structure surface of the processing template to obtain the etching depth of the processing template; according to the etching depth, performing data processing operations to obtain an average etching rate; according to the average etching rate, using a linear regression formula to establish a relationship model of laser etching data; according to the relationship model and the basic parameters, performing a laser power adjustment operation to obtain a laser power adjustment plan; according to the laser power adjustment plan, completing the process parameter adjustment of all the processing materials. This method can achieve more precise process parameter settings and meet high-precision processing requirements.

Description

Technical Field

[0001] The present invention relates to the technical field of laser etching, and in particular to a parameter adjustment method and device for high-precision laser etching. Background Art

[0002] With the increasing demand for high-precision processing in the field of micro-machining, laser etching has become an important process in the field of micro-machining due to its advantages of non-contact, high precision and high efficiency. However, in the process of laser etching, the etching rate and accuracy are complexly affected by a variety of material properties and process parameters. How to achieve high-precision and high-efficiency processing is still one of the key technical challenges.

[0003] In one prior art, laser etching adjusts the etching rate by adjusting the laser power to improve processing accuracy. At the same time, parameters such as the laser focus depth and spot diameter will significantly affect the etching efficiency and quality, and these laser processing parameter settings rely on empirical methods or a process database established based on experimental data, and the processing parameters are determined through repeated experiments to meet the process requirements.

[0004] In the prior art, the setting of laser etching process parameters is relatively rough and cannot meet the requirements of high-precision processing. Summary of the invention

[0005] The present invention provides a parameter adjustment method for high-precision laser etching, aiming to solve the problem that the setting of laser etching process parameters in the prior art is relatively rough and cannot meet the requirements of high-precision processing. It provides an effective technical solution for process parameter adjustment to achieve more precise process parameter setting and meet the requirements of high-precision processing.

[0006] In a first aspect, in order to solve the above technical problems, the present invention provides a parameter adjustment method for high-precision laser etching, which is executed by a controller and includes:

[0007] Obtaining basic parameters and preliminary processing parameters of the processing material, wherein the basic parameters include basic characteristic data and process target data of the processing material;

[0008] According to the preliminary processing parameters, controlling the equipment to prepare a sample to obtain a processing sample of the processing material, and performing an etching depth measurement operation on the photolithographic structure surface of the processing sample to obtain the etching depth of the processing sample;

[0009] According to the etching depth, performing data processing operation to obtain an average etching rate;

[0010] According to the average etching rate, a relationship model of laser etching data is established using a linear regression formula;

[0011] According to the relationship model and the basic parameters, a laser power adjustment operation is performed to obtain a laser power adjustment scheme;

[0012] According to the laser power adjustment scheme, the process parameter adjustment of all the processed materials is completed.

[0013] As an optional implementation, the preliminary processing parameters include preliminary laser parameters, optical property parameters of the processing material, preliminary etching process parameters and etching equipment parameters, and the preliminary laser parameters include laser power, pulse frequency and laser wavelength.

[0014] As an optional implementation manner, performing an etching depth measurement operation on the photolithography structure surface of the processing template to obtain the etching depth of the processing template includes:

[0015] According to the process target data, a surface area of ​​the photolithography structure of the processing sample is selected, and measurement is performed within a target etching depth range;

[0016] The measuring operation includes: measuring a broken line at a preset interval in a direction perpendicular to the etching line, and recording the etching depth of the current broken line;

[0017] The measuring operation is repeated until the etching depths of all broken lines are measured, thereby obtaining the etching depths of all broken lines of the processing sample.

[0018] As an optional implementation manner, performing data processing operations according to the etching depth to obtain an average etching rate includes:

[0019] The calculation formula for the average etching rate of the current broken line is expressed as:

[0020] ;

[0021] in, Indicates the average etching rate of the current broken line, Indicates the measured length of the current disconnection. Indicates the exposure time, It is expressed as the maximum etching depth of the current broken line;

[0022] Then the average etching rate of all broken lines of the processing sample is expressed as:

[0023] ;

[0024] in, represents the average etching rate of the processed sample, Indicates the number of disconnections.

[0025] As an optional implementation manner, the relationship model of laser etching data is established by using a linear regression formula according to the average etching rate, including:

[0026] With the focus depth as the horizontal coordinate and the average etching rate as the vertical coordinate, the regression coefficient and intercept of the relationship model are calculated, the data points are fitted, and the relationship model of the laser etching data is established;

[0027] The relationship model of the laser etching data includes a relationship model between the laser focus depth and the average etching rate;

[0028] The relationship model between the laser focus depth and the average etching rate is expressed as:

[0029] ;

[0030] in, It is expressed as a functional relationship between the average etching rate and the laser focus depth, Expressed as the laser focus depth, represents the regression coefficient, represents the intercept.

[0031] As an optional implementation, calculating the regression coefficient and intercept of the relationship model includes:

[0032] The least square method is used to calculate the regression coefficient and intercept of the laser focus depth and etching rate. The calculation formula is expressed as:

[0033] ;

[0034] ;

[0035] in, represents the regression coefficient, represents the intercept, represents the number of data points, Expressed as The laser focus depth of each data point is Indicates the corresponding The average etching rate of the data points.

[0036] As an optional implementation manner, performing a laser power adjustment operation according to the relationship model and the basic parameters to obtain a laser power adjustment scheme includes:

[0037] Substituting the process requirement target depth into the relationship model, the corresponding target average etching rate is obtained:

[0038] ;

[0039] The laser power adjustment scheme includes the adjusted laser power, which is calculated by the following formula:

[0040] ;

[0041] in, represents the regression coefficient, represents the intercept, It is expressed as the average etching rate corresponding to the target focus depth required by the process, Indicates the depth of focus of process demand target, is expressed as the adjusted laser power, It is the laser power before adjustment. represents the average etching rate.

[0042] In a second aspect, the present invention provides a parameter adjustment device for high-precision laser etching, which is configured in a controller and includes:

[0043] A data acquisition module, for the data including preliminary processing parameters, basic characteristic data and process target data of the processing material;

[0044] An etching depth acquisition module is used to control the equipment to prepare samples according to the preliminary processing parameters to obtain a processing sample of the processing material, and to perform an etching depth measurement operation on the photolithography structure surface of the processing sample to obtain the etching depth of the processing sample;

[0045] An average etching rate acquisition module, used to perform data processing operations according to the etching depth to obtain an average etching rate;

[0046] A relationship model building module, used to build a relationship model of laser etching data using a linear regression formula according to the average etching rate;

[0047] An adjustment scheme acquisition module performs a laser power adjustment operation according to the relationship model and the basic parameters to obtain a laser power adjustment scheme;

[0048] The process parameter adjustment module completes the process parameter adjustment of all the processed materials according to the laser power adjustment scheme.

[0049] In a third aspect, the present invention further provides an electronic device comprising a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, wherein when the processor executes the computer program, the parameter adjustment method for high-precision laser etching described in any one of the above is implemented.

[0050] In a fourth aspect, the present invention further provides a computer-readable storage medium, which includes a stored computer program, wherein when the computer program is running, the device where the computer-readable storage medium is located is controlled to execute any one of the above-mentioned parameter adjustment methods for high-precision laser etching.

[0051] Compared with the prior art, the present invention has the following beneficial effects:

[0052] The present invention provides a parameter adjustment method for high-precision laser etching, the method comprising: obtaining basic parameters and preliminary processing parameters of a processing material, the basic parameters comprising basic characteristic data and process target data of the processing material; according to the preliminary processing parameters, controlling equipment to prepare samples to obtain a processing template of the processing material, and performing an etching depth measurement operation on a photolithography structure surface of the processing template to obtain the etching depth of the processing template; according to the etching depth, performing a data processing operation to obtain an average etching rate; according to the average etching rate, using a linear regression formula to establish a relationship model of laser etching data; according to the relationship model and the basic parameters, performing a laser power adjustment operation to obtain a laser power adjustment plan; according to the laser power adjustment plan, completing the process parameter adjustment of all the processing materials.

[0053] This method uses a controller system to collect data, uses a mathematical linear regression formula to process the collected data, builds a relationship model between etching rate and focus depth, and analyzes and optimizes laser etching parameters by applying the model. Based on this, according to the set process goals, the laser power and processing depth and other parameters are reasonably adjusted to quickly complete the optimization setting of process parameters, complete the precise control of photoresist etching rate, improve etching uniformity and processing efficiency, effectively reduce the repeated debugging process in process development, and achieve high-precision processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] Figure 1 It is a flow chart of a parameter adjustment method for high-precision laser etching provided by an embodiment of the present invention;

[0055] Figure 2 It is a schematic diagram of a relationship model between laser focus depth and average etching rate provided by an embodiment of the present invention;

[0056] Figure 3 It is a schematic diagram of the structure of a parameter adjustment device for high-precision laser etching provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0057] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0058] With the increasing demand for high-precision processing in the field of micro-machining, laser etching has become an important process in the field of micro-machining due to its advantages of non-contact, high precision and high efficiency. However, in the process of laser etching, the etching rate and accuracy are complexly affected by a variety of material properties and process parameters. How to achieve high-precision and high-efficiency processing is still one of the key technical challenges.

[0059] In one prior art, laser etching adjusts the etching rate by adjusting the laser power to improve processing accuracy. At the same time, parameters such as the laser focus depth and spot diameter will significantly affect the etching efficiency and quality, and these laser processing parameter settings rely on empirical methods or a process database established based on experimental data, and the processing parameters are determined through repeated experiments to meet the process requirements.

[0060] In the prior art, the setting of laser etching process parameters is relatively rough and cannot meet the requirements of high-precision processing.

[0061] To solve the above problems, refer to Figure 1 The first embodiment of the present invention provides a method for adjusting parameters of high-precision laser etching, comprising the following steps:

[0062] S1, obtaining basic parameters and preliminary processing parameters of the processing material, wherein the basic parameters include basic characteristic data and process target data of the processing material;

[0063] S2, according to the preliminary processing parameters, controlling the equipment to prepare a sample to obtain a processing sample of the processing material, and performing an etching depth measurement operation on the photolithography structure surface of the processing sample to obtain the etching depth of the processing sample;

[0064] S3, performing data processing operations according to the etching depth to obtain an average etching rate;

[0065] S4, establishing a relationship model of laser etching data using a linear regression formula according to the average etching rate;

[0066] S5, performing a laser power adjustment operation according to the relationship model and the basic parameters to obtain a laser power adjustment scheme;

[0067] S6, completing the adjustment of the process parameters of all the processed materials according to the laser power adjustment scheme.

[0068] In step S1, basic parameters and preliminary processing parameters of the processing material are obtained, wherein the basic parameters include basic characteristic data and process target data of the processing material.

[0069] In one implementation, the obtaining of basic parameters and preliminary processing parameters of the processing material includes:

[0070] The basic parameters of the processed materials are obtained by chemical analysis, which can be specifically divided into inductively coupled plasma emission spectrometer (ICP-AES), X-ray photoelectron spectrometer (XPS, X-Ray Photoelectron Spectroscopy) and X-ray diffraction (XRD, X-Ray Diffraction);

[0071] The inductively coupled plasma emission spectrometer is used to analyze the spectrum emitted by atoms or ions of the processed material to quantitatively analyze the elemental composition. Specifically, the processed sample is introduced into a high-temperature plasma (usually using argon plasma). After the elements in the sample are excited to a high-energy state, they release light of a specific wavelength when returning to the ground state. By measuring the intensity of light of different wavelengths, the content of each element in the processed sample is quantitatively analyzed;

[0072] The X-ray photoelectron spectrometer, also known as electron spectrum analysis, is used to analyze the chemical composition, chemical state and electronic structure of elements on the surface of solids. Specifically, the surface of the sample is processed by irradiating X-rays to excite the inner electrons of the atoms in the sample and escape to form photoelectrons. By measuring the energy and number of these photoelectrons, the chemical composition, valence state, electronic structure and other information of the elements on the surface of the sample are obtained;

[0073] The X-ray diffractometer is used to analyze the crystal structure and phase composition of the processed material. Specifically, X-rays are irradiated onto the processed sample, and the X-rays interact with the crystal structure in the sample to generate a diffraction pattern. By analyzing the diffraction pattern, the lattice constant, phase composition and crystal defect information of the material are determined;

[0074] It should be noted that the basic characteristic data of the processing material include the absorption characteristics of the material and the photosensitivity characteristics of the photoresist;

[0075] Determine process target data according to process design requirements, the process target data of the processing material including but not limited to target etching depth, laser etching rate of photoresist, exposure time, thickness of photoresist, laser power and wavelength and other key parameters;

[0076] Furthermore, the preliminary processing parameters include preliminary laser parameters, optical performance parameters of the processing material, preliminary etching process parameters and etching equipment parameters, and the preliminary laser parameters include laser power, pulse frequency and laser wavelength.

[0077] In step S2, according to the preliminary processing parameters, the control equipment performs sample preparation to obtain a processing template of the processing material, and performs an etching depth measurement operation on the photolithography structure surface of the processing template to obtain the etching depth of the processing template.

[0078] In one implementation, according to the preliminary processing parameters, controlling the equipment to prepare a sample to obtain a processing template of the processing material, and performing an etching depth measurement operation on the photolithography structure surface of the processing template to obtain the etching depth of the processing template includes:

[0079] According to the preliminary processing parameters, the system initialization settings of the processing equipment are performed, a piece of processing material is selected as a test stereotype, and a sample preparation operation is performed;

[0080] The sample preparation operation includes photolithography mask, photolithography process, etching process and cleaning process;

[0081] After the test plate is subjected to the sample preparation operation steps, a processed sample is obtained;

[0082] It should be noted that the photolithography mask is specifically made according to the design pattern, and is used as a template for the subsequent photolithography process. In the photolithography process, the photoresist is evenly coated on the surface of the substrate, and ultraviolet light is irradiated onto the substrate coated with the photoresist through an exposure device. The photoresist is exposed according to the pattern of the mask, and the unexposed part remains intact, while the exposed part becomes soluble or insoluble. After the exposure is completed, the photoresist in the unexposed or exposed area is removed through a development process to form a patterned photoresist layer;

[0083] The etching process is specifically to remove the exposed area of ​​the substrate through an etching process, and the etching method adopts dry etching or wet etching. Dry etching usually uses plasma or laser beam, while wet etching removes the material on the surface of the substrate through chemical solution. The etching process ensures that the designed pattern is left in the area protected by the photoresist;

[0084] The cleaning process is specifically a cleaning process for the processed sample after etching, removing the residual photoresist on the surface or impurities generated during the etching process, ensuring that the sample surface is clean and free of pollution. The cleaning is carried out by solvent cleaning or ultrasonic cleaning, etc. After all pollutants are completely removed, the sample preparation process is completed;

[0085] Furthermore, the etching depth measurement operation is performed on the photolithography structure surface of the processing template to obtain the etching depth of the processing template, including:

[0086] According to the process target data, a surface area of ​​the photolithography structure of the processing sample is selected, and measurement is performed within a target etching depth range;

[0087] The measuring operation includes: measuring a broken line at a preset interval in a direction perpendicular to the etching line, and recording the etching depth of the current broken line;

[0088] Repeat the measurement operation until the etching depths of all broken lines are measured, and the etching depths of all broken lines of the processing sample are obtained;

[0089] It should be noted that the preset spacing includes but is not limited to 10 μm or 50 μm.

[0090] In step S3, data processing operations are performed according to the etching depth to obtain an average etching rate.

[0091] In one implementation, performing data processing operations according to the etching depth to obtain an average etching rate includes:

[0092] The calculation formula for the average etching rate of the current broken line is expressed as:

[0093] ;

[0094] in, Indicates the average etching rate of the current broken line, Indicates the measured length of the current disconnection. Indicates the exposure time, It is expressed as the maximum etching depth of the current broken line;

[0095] Then the average etching rate of all broken lines of the processing sample is expressed as:

[0096] ;

[0097] in, represents the average etching rate of the processed sample, Indicates the number of disconnections.

[0098] In step S4, a relationship model of laser etching data is established using a linear regression formula according to the average etching rate.

[0099] In one implementation, a linear regression formula is used to establish a relationship model of laser etching data according to the average etching rate, including:

[0100] With the focus depth and laser power as the horizontal coordinates and the average etching rate as the vertical coordinates, the regression coefficient and intercept of the relationship model are calculated, the data points are fitted, and the relationship model of the laser etching data is established;

[0101] The relationship model of the laser etching data includes a relationship model between the laser focus depth and the average etching rate and a linear relationship model between the laser power and the average etching rate;

[0102] The relationship model between the laser focus depth and the average etching rate is expressed as:

[0103] ;

[0104] The linear relationship model between the laser power and the average etching rate is expressed as: ;

[0105] in, It is expressed as a functional relationship between the average etching rate and the laser focus depth, Expressed as the laser focus depth, It is expressed as a functional relationship between the average etching rate and the laser power, represents the laser power, represents the regression coefficient, represents the intercept;

[0106] It should be noted that the relationship model between the laser focus depth and the average etching rate can be specifically expressed as: ;

[0107] Furthermore, the calculation of the regression coefficient and intercept of the relationship model includes:

[0108] The regression coefficient between the laser focus depth and the etching rate :

[0109] ;

[0110] ;

[0111] The regression coefficient between laser power and etching rate is and the intercept :

[0112] ;

[0113] ;

[0114] in, , represents the regression coefficient, , represents the intercept, represents the number of data points, Expressed as The laser focus depth of each data point is Expressed as The laser power at each data point, Indicates the corresponding The average etching rate of data points;

[0115] Furthermore, the data point fitting comprises:

[0116] The above-mentioned relationship model of laser etching data is used to predict the new processing material data, and the fitting degree of the model is evaluated by the correlation coefficient. The calculation method of the correlation coefficient is expressed as follows:

[0117] ;

[0118] in, represents the fitness of the relationship model, represents the number of data points, Indicates the actual measurement The average etching rate of data points is represents the etching rate predicted by the regression model, Represents the average value of the actual etching rate;

[0119] It should be noted that the The closer the value is to 1, the better the fitting effect of the regression model is, and the relationship model can better describe the relationship between the etching rate, the light-inviting power and the focusing depth; The closer the value is to 0, the more the model needs to be optimized.

[0120] In step S5, a laser power adjustment operation is performed according to the relationship model and the basic parameters to obtain a laser power adjustment scheme.

[0121] In one implementation, a laser power adjustment operation is performed according to the relationship model and the basic parameters to obtain a laser power adjustment scheme, including:

[0122] Substituting the process requirement target depth into the relationship model, the corresponding target average etching rate is obtained:

[0123] ;

[0124] The laser power adjustment scheme includes the adjusted laser power, which is calculated by the following formula:

[0125] ;

[0126] in, represents the regression coefficient, represents the intercept, It is expressed as the average etching rate corresponding to the target focus depth required by the process, Indicates the depth of focus of process demand target, is expressed as the adjusted laser power, It is the laser power before adjustment. represents the average etching rate;

[0127] Furthermore, the laser power adjustment scheme also includes calculation of the photoresist surface depth, specifically, target photoresist surface depth = target etching depth + target photoresist thickness + focus depth;

[0128] It should be noted that the target photoresist surface depth calculation formula can be used to accurately set the laser power to ensure that the laser beam can act evenly and effectively on the photoresist layer to achieve the required etching depth and processing accuracy.

[0129] In step S6, the process parameters of all the processed materials are adjusted according to the laser power adjustment scheme.

[0130] In one implementation, the process parameters of all the processed materials are adjusted according to the laser power adjustment scheme, including:

[0131] According to the laser power adjustment scheme, the laser power is adjusted to meet the processing requirements, and the laser power is adjusted accordingly according to different target etching depths and focus depths, thereby ensuring that the photoresist can be etched uniformly and effectively within a given processing time;

[0132] After the laser power is adjusted, the depth of the photoresist surface is further calculated to ensure that the laser can accurately act on the photoresist layer. According to the relationship between the target etching depth, the photoresist thickness and the focus depth, the final photoresist surface depth is determined, and the laser power is further fine-tuned accordingly. Through this adjustment, it is ensured that the laser beam can be focused on the appropriate position of the photoresist layer to ensure the required etching depth and processing accuracy;

[0133] After completing the adjustment of laser power and photoresist surface depth, the actual processing operation begins. During the processing, according to the set parameters such as laser power, focus depth and exposure time, ensure that each process step is carried out according to the predetermined goals. If any deviation or error is found during the processing, the relevant process parameters are adjusted through real-time feedback to ensure that the processing quality always meets the design requirements.

[0134] In order to facilitate the understanding of the present invention, some preferred embodiments of the present invention are further described below.

[0135] In a preferred embodiment, the parameter adjustment method for high-precision laser etching is performed by a controller, and the laser power adjustment scheme further includes:

[0136] Material properties: The material is PMMA polymer, which has good absorption properties and is a 10mm diameter round sheet;

[0137] Process goal: Under the condition of ensuring the integrity of the morphology, the etching depth is 1.5µm and the processing time is 18min;

[0138] Set the preliminary processing parameters: laser power is 1.5W, focus depth is 0.8µm, and complete the test stereotype sample preparation and data measurement under the set preliminary processing parameters;

[0139] Data processing was performed according to the linear regression model: a linear relationship model of P=1.5W, f=0.8µm, k1=-0.9766, k2=-0.2278, and R=0.9986 was obtained; the P value of the model significance test was less than 0.0001, reaching significance; the adjusted regression coefficients were all less than 0.1, and the effect was significant;

[0140] Data fitting was performed according to the relationship model: the fitted data was very consistent with the test model, with a linear correlation coefficient of 0.991, and the effect was significant;

[0141] According to the requirements of the process objectives for etching depth and processing time, the laser power adjustment plan is obtained: when the focus depth is fixed at 0.8µm, while ensuring the integrity of the morphology, the processing time is 18min and the laser power is 1.5W; when the focus depth is fixed at 0.8µm, the power is 1.3W, and the processing time needs to be extended to 20min; when the focus depth is 0.5µm, the power is 1.3W and the processing time is 25min.

[0142] The following describes the working process of the present invention using a relatively common scenario as an example. The working process is as follows:

[0143] Step 1: Collect the basic characteristics of the processing materials and the processing technology goals;

[0144] Step 2: Under the initial processing parameter setting conditions, complete the test stereotype sample preparation and measure on the surface of the lithographic structure;

[0145] Step 3: Data processing, establishing a relationship model between etching rate, laser power and focus depth through linear regression;

[0146] Step 4: Using the relationship model in step 3, according to the requirements of the process target for etching depth and processing time, a laser power adjustment plan is obtained;

[0147] Step 5: According to the laser power adjustment scheme of step 4, complete the process parameter setting of the material to be adjusted and perform processing;

[0148] Preferably, in step 1, the basic characteristic data of the processing material includes the absorption characteristics of the material and the photosensitivity characteristics of the photoresist.

[0149] Preferably, in step 2, the processing material is sampled under the initial processing parameter setting conditions, three test plate preparations are performed under each setting condition, and the etching depth is measured along the set straight line on the surface of the photolithographic structure.

[0150] Further, the etching depth measurement method includes: directly measuring and measuring the depth difference from a certain point to the edge of the structure;

[0151] The direct measurement is specifically as follows: it is necessary to ensure that the surface of the photolithographic structure of each sample after etching is continuous, and the depth value is in the range of 0 to 20um, scan under a scanning electron microscope (SEM) and measure according to a ruler, and measure three locations on each sample to obtain an average value;

[0152] The method of measuring the depth difference from a certain point to the edge of the structure is as follows: placing two adjacent etching samples processed at different powers under a scanning electron microscope, and measuring the depth difference from the edge of the two adjacent etching samples at the same measuring point, which is the etching depth difference under the two powers;

[0153] Among them, P1 and P2 are two adjacent powers (P1 power is greater than P2 power). According to the depth data measured under power P1 and power P2, the depth difference between power P1 and power P2 can be obtained, which is the etching rate represented by the etching depths of P1 and P2.

[0154] It should be noted that the depth-width ratio of the processed sample in this embodiment is relatively large, and the etching morphology of the surface of the photolithographic structure is discontinuous, so the direct measurement method cannot be used, so the depth difference from a certain point to the edge of the structure is selected.

[0155] Furthermore, if the laser is parallel to the surface of the processed sample, the depth value between the point where the laser irradiation reaches and the edge of the processed material structure is x. If the laser is not parallel to the sample surface, the point where the laser irradiation reaches and the edge of the processed material structure form an angle a. According to the mathematical relationship, the depth value between the point where the laser irradiation reaches and the edge of the processed material structure is: , and then the structural depth H can be obtained as:

[0156] ;

[0157] It should be noted that B represents the width of the photolithography structure at a certain location. The width of the structure is perpendicular to the laser, and the depth direction is parallel to the longitudinal scanning direction of the scanning electron microscope.

[0158] Furthermore, the difference in structural depth after etching with power P1 and power P2 is the difference in structural depth between power P1 and power P2, where the structural depth of P1 is x1 and the structural depth of P2 is x2, then the difference in etching depth between power P1 and power P2 is: ;

[0159] It should be noted that according to the formula for the difference between the structure depth and the etching depth, under a scanning electron microscope, one only needs to measure the depth difference between the same point and the edge of the structure after etching by two laser beams (that is, the difference in etching depth under two powers), to calculate the etching depth of the point in time period t, and draw the etching depth curve of the photolithography structure in different directions and at different times.

[0160] Preferably, in the step three, a linear regression method is used to obtain the regression coefficient and correlation coefficient test under each linear relationship model, and the influencing factors with a small correlation coefficient (correlation coefficient less than 0.9) are eliminated, so as to establish a linear relationship model between the final etching rate, laser power and focusing depth;

[0161] The relationship model between the etching rate, laser power and focus depth is specifically expressed as:

[0162] ;

[0163] in, represents the etching rate, represents the laser power, represents the depth of focus, and is the regression coefficient, which indicates the effect of laser power and focus depth on etching rate. is a constant term, indicating the offset of the model;

[0164] It should be noted that the model reveals the linear effect of laser power and focus depth on the etching rate. By adjusting the laser power and focus depth, the etching rate can be precisely controlled. The reducible coefficients are obtained by fitting the experimental data. , and constant term , which can be used to calculate and predict the etching rate under different process conditions in actual processing.

[0165] Preferably, in step 4, according to the requirements of the process target on the etching depth and processing time, a laser power adjustment scheme is obtained, including:

[0166] According to the given processing time requirement and the formula for the difference between the structure depth and the etching depth, the required laser power adjustment scheme is calculated. According to the actual equipment adjustment conditions, the laser power is selected as the variable and the focusing depth is calculated.

[0167] Further, the calculating the focus depth includes:

[0168] Taking the etching rate of 1.8um / min as an example, under the condition of processing time of 10min, according to the formula of the difference between the structure depth and the etching depth, the required focus depth is 0.75um;

[0169] When the equipment condition limits the focus depth to 0.5um, the actual power is calculated to be 1.1W. Since the actual process condition power is 1.5W, the focus depth can be appropriately adjusted to 1.1W, and the actual power is 1.2W, so the processing time can be 5 minutes and 28 seconds. The etching depth and processing time can be calculated according to the formula of the difference between the structural depth and the etching depth.

[0170] Preferably, in step five, according to the laser power adjustment scheme of step four, the process parameters of the material to be adjusted are set, and processing is performed, including:

[0171] According to the laser power adjustment scheme, the laser power is adjusted to meet the processing requirements, and the laser power is adjusted accordingly according to different target etching depths and focus depths, thereby ensuring that the photoresist can be etched uniformly and effectively within a given processing time;

[0172] After the laser power is adjusted, the depth of the photoresist surface is further calculated to ensure that the laser can accurately act on the photoresist layer. According to the relationship between the target etching depth, the photoresist thickness and the focus depth, the final photoresist surface depth is determined, and the laser power is further fine-tuned accordingly. Through this adjustment, it is ensured that the laser beam can be focused on the appropriate position of the photoresist layer to ensure the required etching depth and processing accuracy;

[0173] After completing the adjustment of laser power and photoresist surface depth, the actual processing operation begins. During the processing, according to the set parameters such as laser power, focus depth and exposure time, ensure that each process step is carried out according to the predetermined target. If any deviation or error is found during the processing, the relevant process parameters are adjusted through real-time feedback to ensure that the processing quality always meets the design requirements;

[0174] Furthermore, the laser adjustment scheme is specifically implemented as follows:

[0175] (1) Material properties: The material is titanium alloy, and the material is a 10mm diameter circular sheet; process goal: while ensuring the integrity of the morphology, the etching depth is 1.5µm and the processing time is 18min; (2) Set the preliminary processing parameters: the laser power is 1.5W and the focusing depth is 0.8µm; (3) Under the set preliminary processing parameters, complete the test stereotype sample preparation and data measurement; (4) Obtain a linear relationship model of P=1.5W, f=0.8µm, k1=-0.9789, k2=-0.0581, and R=0.9899; the model significance test P value is less than 0.0001, which is significant; the adjusted regression coefficients are all less than 0.1, and the effect is significant; the effect of the fitted data is very consistent with the model, and the linear correlation coefficient is 0.988, which is significant. (5) According to the requirements of the process objectives for etching depth and processing time, the laser power adjustment scheme is obtained. When the focus depth is adjusted to 0.8µm, the power is 1.5W and the processing time is still 18min. When the focus depth is fixed at 0.8µm, the power is 1.4W and the processing time needs to be extended to 20min. When the focus depth is 0.5µm, the power is 1.4W and the processing time is 22min.

[0176] Reference Figure 2 , with the focus depth as the horizontal coordinate and the average etching rate as the vertical coordinate, the data points are fitted to establish a relationship model between the photoresist etching rate and the focus depth;

[0177] Furthermore, according to the relationship model, the new data is input into the model, the regression coefficient and correlation coefficient test under the linear relationship model of each new data are calculated, and the fitting points with small correlation coefficients (correlation coefficients less than 0.9) are eliminated until better fitting points are obtained, thereby establishing the linear relationship model of the final etching rate and focusing depth.

[0178] In summary, the present invention provides a parameter adjustment method for high-precision laser etching, the method comprising: obtaining basic parameters and preliminary processing parameters of a processing material, the basic parameters comprising basic characteristic data and process target data of the processing material; according to the preliminary processing parameters, controlling equipment to prepare samples to obtain a processing template of the processing material, and performing an etching depth measurement operation on the photolithography structure surface of the processing template to obtain the etching depth of the processing template; according to the etching depth, performing data processing operations to obtain an average etching rate; according to the average etching rate, using a linear regression formula to establish a relationship model of laser etching data; according to the relationship model and the basic parameters, performing a laser power adjustment operation to obtain a laser power adjustment plan; according to the laser power adjustment plan, completing the process parameter adjustment of all the processing materials.

[0179] This method uses a controller system to collect data, uses a mathematical linear regression formula to process the collected data, builds a relationship model between etching rate and focus depth, and analyzes and optimizes laser etching parameters by applying the model. Based on this, according to the set process goals, the laser power and processing depth and other parameters are reasonably adjusted to quickly complete the optimization setting of process parameters, complete the precise control of photoresist etching rate, improve etching uniformity and processing efficiency, effectively reduce the repeated debugging process in process development, and achieve high-precision processing.

[0180] Reference Figure 3 The second embodiment of the present invention provides a parameter adjustment device for high-precision laser etching, which is configured in a controller and includes:

[0181] 101 data acquisition module, used for the data including preliminary processing parameters, basic characteristic data and process target data of the processing material;

[0182] 102 an etching depth acquisition module, for controlling the equipment to prepare samples according to the preliminary processing parameters to obtain a processing sample of the processing material, and performing an etching depth measurement operation on the photolithography structure surface of the processing sample to obtain the etching depth of the processing sample;

[0183] 103 an average etching rate module, used to perform data processing operations according to the etching depth to obtain an average etching rate;

[0184] 104 a relationship model building module, used to build a relationship model of laser etching data using a linear regression formula according to the average etching rate;

[0185] 105 an adjustment scheme acquisition module, performing a laser power adjustment operation according to the relationship model and the basic parameters to obtain a laser power adjustment scheme;

[0186] 106 A process parameter adjustment module is used to adjust the process parameters of all the processed materials according to the laser power adjustment scheme.

[0187] It should be noted that a parameter adjustment device for high-precision laser etching provided in an embodiment of the present invention is used to execute all process steps of a parameter adjustment device for high-precision laser etching in the above-mentioned embodiment. The working principles and beneficial effects of the two correspond one to one, and thus will not be elaborated upon.

[0188] In summary, the present invention provides a parameter adjustment method for high-precision laser etching, the method comprising: obtaining basic parameters and preliminary processing parameters of a processing material, the basic parameters comprising basic characteristic data and process target data of the processing material; according to the preliminary processing parameters, controlling equipment to prepare samples to obtain a processing template of the processing material, and performing an etching depth measurement operation on the photolithography structure surface of the processing template to obtain the etching depth of the processing template; according to the etching depth, performing data processing operations to obtain an average etching rate; according to the average etching rate, using a linear regression formula to establish a relationship model of laser etching data; according to the relationship model and the basic parameters, performing a laser power adjustment operation to obtain a laser power adjustment plan; according to the laser power adjustment plan, completing the process parameter adjustment of all the processing materials.

[0189] This method uses a controller system to collect data, uses a mathematical linear regression formula to process the collected data, builds a relationship model between etching rate and focus depth, and analyzes and optimizes laser etching parameters by applying the model. Based on this, according to the set process goals, the laser power and processing depth and other parameters are reasonably adjusted to quickly complete the optimization setting of process parameters, complete the precise control of photoresist etching rate, improve etching uniformity and processing efficiency, effectively reduce the repeated debugging process in process development, and achieve high-precision processing.

[0190] An embodiment of the present invention further provides an electronic device. The electronic device includes: a processor, a memory, and a computer program stored in the memory and executable on the processor, such as a parameter adjustment method program for high-precision laser etching. When the processor executes the computer program, the steps in the above-mentioned parameter adjustment method embodiments based on high-precision laser etching are implemented, such as Figure 1 Alternatively, when the processor executes the computer program, the functions of the modules / units in the above-mentioned device embodiments are realized, for example, the data acquisition module 101.

[0191] Exemplarily, the computer program may be divided into one or more modules / units, which are stored in the memory and executed by the processor to implement the present invention. The one or more modules / units may be a series of computer program instruction segments capable of implementing specific functions, which are used to describe the execution process of the computer program in the electronic device.

[0192] The electronic device may be a computing device such as a desktop computer, a notebook, a PDA, and a smart tablet. The electronic device may include, but is not limited to, a processor and a memory. Those skilled in the art will appreciate that the above components are merely examples of electronic devices and do not constitute a limitation on the electronic device. The electronic device may include more or fewer components than the above components, or may combine certain components, or different components. For example, the electronic device may also include input and output devices, network access devices, buses, etc.

[0193] The processor may be a central processing unit (CPU), other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor, etc. The processor is the control center of the electronic device, and uses various interfaces and lines to connect various parts of the entire electronic device.

[0194] The memory can be used to store the computer program and / or module, and the processor realizes various functions of the electronic device by running or executing the computer program and / or module stored in the memory, and calling the data stored in the memory. The memory can mainly include a program storage area and a data storage area, wherein the program storage area can store an operating system, an application required for at least one function (such as a sound playback function, an image playback function, etc.), etc.; the data storage area can store data created according to the use of the mobile phone (such as audio data, a phone book, etc.), etc. In addition, the memory can include a high-speed random access memory, and can also include a non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash card (Flash Card), at least one disk storage device, a flash memory device, or other volatile solid-state storage devices.

[0195] Wherein, if the module / unit integrated in the electronic device is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the present invention implements all or part of the processes in the above-mentioned embodiment method, and can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, and the computer program can implement the steps of the above-mentioned various method embodiments when executed by the processor. Wherein, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, U disk, mobile hard disk, disk, optical disk, computer memory, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), electric carrier signal, telecommunication signal and software distribution medium. It should be noted that the content contained in the computer-readable medium can be appropriately increased or decreased according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable media do not include electric carrier signals and telecommunication signals.

[0196] It should be noted that the device embodiments described above are merely schematic, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. In addition, in the accompanying drawings of the device embodiments provided by the present invention, the connection relationship between the modules indicates that there is a communication connection between them, which may be specifically implemented as one or more communication buses or signal lines. A person of ordinary skill in the art may understand and implement it without paying any creative effort.

[0197] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. It is particularly pointed out that for those skilled in the art, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for adjusting parameters of high-precision laser etching, characterized in that: Executed by the controller, including: Obtaining basic parameters and preliminary processing parameters of the processing material, wherein the basic parameters include basic characteristic data and process target data of the processing material; According to the preliminary processing parameters, controlling the equipment to prepare a sample to obtain a processing sample of the processing material, and performing an etching depth measurement operation on the photolithography structure surface of the processing sample to obtain the etching depth of the processing sample; According to the etching depth, performing data processing operation to obtain an average etching rate; According to the average etching rate, a relationship model of laser etching data is established using a linear regression formula; According to the relationship model and the basic parameters, a laser power adjustment operation is performed to obtain a laser power adjustment scheme; According to the laser power adjustment scheme, the process parameters of all the processed materials are adjusted; Wherein, the relationship model of laser etching data is established by using a linear regression formula according to the average etching rate, including: With the focus depth as the horizontal coordinate and the average etching rate as the vertical coordinate, the regression coefficient and intercept of the relationship model are calculated, and the data points are fitted to establish a relationship model for laser etching data; The relationship model of the laser etching data includes a relationship model between the laser focus depth and the average etching rate; The relationship model between the laser focus depth and the average etching rate is expressed as: ； in, It is expressed as a functional relationship between the average etching rate and the laser focus depth, Expressed as the laser focus depth, represents the regression coefficient, represents the intercept; Among them, the regression coefficient and intercept of the relationship model are calculated, including: The least square method is used to calculate the regression coefficient and intercept of the laser focus depth and etching rate. The calculation formula is expressed as: ； ； in, represents the regression coefficient, represents the intercept, represents the number of data points, Expressed as The laser focus depth of each data point is Indicates the corresponding The average etching rate of the data points.

2. The parameter adjustment method for high-precision laser etching according to claim 1, characterized in that: The preliminary processing parameters include preliminary laser parameters, optical performance parameters of the processing material, preliminary etching process parameters and etching equipment parameters. The preliminary laser parameters include laser power, pulse frequency and laser wavelength.

3. The parameter adjustment method for high-precision laser etching according to claim 2, characterized in that: Performing an etching depth measurement operation on the photolithographic structure surface of the processing template to obtain the etching depth of the processing template includes: According to the process target data, a surface area of ​​the photolithography structure of the processing sample is selected, and measurement is performed within a target etching depth range; The measuring operation includes: measuring a broken line at a preset interval in a direction perpendicular to the etching line, and recording the etching depth of the current broken line; The measuring operation is repeated until the etching depths of all broken lines are measured, thereby obtaining the etching depths of all broken lines of the processing sample.

4. The parameter adjustment method for high-precision laser etching according to claim 3, characterized in that: The performing of data processing operations according to the etching depth to obtain an average etching rate includes: The calculation formula for the average etching rate of the current broken line is expressed as: ； in, Indicates the average etching rate of the current broken line, Indicates the measured length of the current disconnection. Indicates the exposure time, It is expressed as the maximum etching depth of the current broken line; Then the average etching rate of all broken lines of the processing sample is expressed as: ； in, represents the average etching rate of the processed sample, Indicates the number of disconnections.

5. The parameter adjustment method for high-precision laser etching according to claim 1, characterized in that: The step of performing a laser power adjustment operation according to the relationship model and the basic parameters to obtain a laser power adjustment scheme includes: Substituting the process requirement target depth into the relationship model, the corresponding target average etching rate is obtained: ； The laser power adjustment scheme includes the adjusted laser power, which is calculated by the following formula: ； in, represents the regression coefficient, represents the intercept, It is expressed as the average etching rate corresponding to the target focus depth required by the process, Indicates the depth of focus of process demand target, is expressed as the adjusted laser power, It is the laser power before adjustment. represents the average etching rate.

6. A parameter adjustment device for high-precision laser etching, characterized in that: The method is configured in a controller and used to implement the parameter adjustment method for high-precision laser etching according to any one of claims 1 to 5, comprising: A data acquisition module, used to acquire basic parameters and preliminary processing parameters of the processing material, wherein the basic parameters include basic characteristic data and process target data of the processing material; An etching depth acquisition module is used to control the equipment to prepare samples according to the preliminary processing parameters to obtain a processing sample of the processing material, and to perform an etching depth measurement operation on the photolithography structure surface of the processing sample to obtain the etching depth of the processing sample; An average etching rate acquisition module, used to perform data processing operations according to the etching depth to obtain an average etching rate; A relationship model building module, used to build a relationship model of laser etching data using a linear regression formula according to the average etching rate; An adjustment scheme acquisition module performs a laser power adjustment operation according to the relationship model and the basic parameters to obtain a laser power adjustment scheme; The process parameter adjustment module completes the process parameter adjustment of all the processed materials according to the laser power adjustment scheme.

7. An electronic device, characterized in that: The method comprises a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, wherein the processor implements the parameter adjustment method for high-precision laser etching as described in any one of claims 1 to 5 when executing the computer program.

8. A computer-readable storage medium, characterized in that: The computer-readable storage medium includes a stored computer program, wherein when the computer program is executed, the device where the computer-readable storage medium is located is controlled to execute the parameter adjustment method for high-precision laser etching according to any one of claims 1 to 5.

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