Method for improving fluorine ion corrosion resistance of aluminum part in cavity of PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment

Abstract

The invention provides a method for improving fluorine ion corrosion resistance of an aluminum piece in a deposition chamber of PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment and corrosion-resistant PECVD equipment prepared by adopting the method. The method comprises the following steps: (1) introducing a first oxygen-containing gas and a first protective gas into a deposition chamber, heating a heating disc in the deposition chamber, turning on a power supply connected with a spraying plate in the deposition chamber, generating a radio frequency field in the deposition chamber, and performing first plasma vapor deposition, an aluminum oxide layer is formed on the surface of the aluminum heating disc and / or the spraying plate; and (2) turning off the power supply, introducing plasmas obtained by excitation of a second oxygen-containing gas and a second protective gas into the deposition chamber, heating a heating disc in the deposition chamber, and carrying out second plasma vapor deposition so as to form an aluminum oxide layer on the surface of the inner wall of the aluminum deposition chamber. The advantages of the PECVD equipment are utilized, disassembly and retreatment can be avoided, plasma oxidation treatment is directly carried out on the aluminum piece in the vacuum chamber, and the fluorine ion corrosion resistance of the aluminum piece is improved.

Description

Technical Field

[0001] The invention belongs to the field of semiconductors, and in particular relates to a method for improving the fluorine ion corrosion resistance of aluminum parts in a chamber of a plasma enhanced chemical vapor deposition (PECVD) device. Background Art

[0002] For aluminum parts in vacuum chambers without corrosion-resistant coating on the surface, long-term exposure to NF 3 In the process, a large amount of AlF 3 Therefore, the surface of aluminum parts needs a corrosion-resistant coating. However, even if the surface of aluminum parts has a corrosion-resistant coating, the corrosion-resistant coating will be gradually destroyed after long-term use, and regular re-coating is required.

[0003] In the field of semiconductor thin film deposition, AlF 3 A large amount of residue in the chamber has always been an important factor affecting the yield of PECVD equipment. In order to reduce AlF 3 Many aluminum parts in the chamber have corrosion-resistant coatings on their surfaces, but in the long term 3 During the etching process, these corrosion-resistant coatings will also be gradually destroyed, exposing the aluminum parts directly to the NF 3 , leading to AlF 3 To avoid this phenomenon, some key aluminum parts need to be re-coated regularly. However, the existing coating treatment technology requires the aluminum parts in the vacuum chamber to be disassembled and then treated with professional equipment, which takes a long time and is expensive. In addition, the surface structure of the aluminum parts in the vacuum chamber is complex, and it is difficult to achieve uniform coating with conventional coating technology. Summary of the invention

[0004] The object of the present invention is to provide a method for improving the fluoride ion corrosion resistance of aluminum parts in a PECVD equipment chamber.

[0005] In a first aspect of the present invention, a method for improving the fluorine ion corrosion resistance of aluminum parts in a deposition chamber of a PECVD device is provided, the method comprising the following steps:

[0006] (1) introducing a first oxygen-containing gas and a first protective gas into the deposition chamber, heating a heating plate in the deposition chamber, turning on a power source connected to a shower plate in the deposition chamber, generating a radio frequency field in the deposition chamber, and performing a first plasma vapor deposition, thereby forming an aluminum oxide layer on the surface of the aluminum heating plate and / or shower plate;

[0007] (2) Turning off the power supply, introducing a plasma excited by a second oxygen-containing gas and a second protective gas into the deposition chamber, heating a heating disk in the deposition chamber, and performing a second plasma vapor deposition, thereby forming an aluminum oxide layer on the inner wall surface of the aluminum deposition chamber.

[0008] In one or more embodiments, the first oxygen-containing gas is selected from N 2 O, O 2 and CO 2 One or more of .

[0009] In one or more embodiments, the flow rate of the first oxygen-containing gas is 400-10000 sccm.

[0010] In one or more embodiments, the first protective gas is selected from Ar, N 2 and He.

[0011] In one or more embodiments, the flow rate of the first protective gas is 400-16000 sccm.

[0012] In one or more embodiments, the heating temperature of the heating plate in step (1) is 300-600°C.

[0013] In one or more embodiments, the gas pressure during the first plasma vapor deposition in step (1) is 5-8 torr.

[0014] In one or more embodiments, the power of the radio frequency field in step (1) is 50-500W.

[0015] In one or more embodiments, the first plasma vapor deposition in step (1) is performed for 1-3 hours.

[0016] In one or more embodiments, the second oxygen-containing gas is selected from N 2 O, O 2 and CO 2 One or more of .

[0017] In one or more embodiments, the flow rate of the second oxygen-containing gas is 400-10000 sccm.

[0018] In one or more embodiments, the second protective gas is selected from Ar, N 2 and He.

[0019] In one or more embodiments, the flow rate of the second protective gas is 900-16000 sccm.

[0020] In one or more embodiments, the heating temperature of the heating plate in step (2) is 300-600°C.

[0021] In one or more embodiments, the gas pressure during the second plasma vapor deposition in step (2) is 2-8 torr.

[0022] In one or more embodiments, the radio frequency power used to form the plasma in step (2) is 50-500W.

[0023] In one or more embodiments, the time for performing the second plasma vapor deposition in step (2) is 2-9 hours.

[0024] In one or more embodiments, the method further includes pretreatment, which includes: before performing step (1), introducing a plasma obtained by exciting a purge gas and a third protective gas into the deposition chamber for purge to remove an oxide layer on the surface of the aluminum part in the deposition chamber.

[0025] In one or more embodiments, the third protective gas is selected from Ar, N 2 and He.

[0026] In one or more embodiments, the purge gas is selected from CF 4 and NF 3 One or both of the following.

[0027] In one or more embodiments, the flow rate of the third protective gas is 5000-15000 sccm.

[0028] In one or more embodiments, the flow rate of the purge gas is 2000-8000 sccm.

[0029] In one or more embodiments, the pretreatment is performed at 300-600°C.

[0030] In one or more embodiments, the pretreatment is performed at 1-4 torr.

[0031] In one or more embodiments, the oxide layer is a native oxide layer.

[0032] The second aspect of the present invention provides a corrosion-resistant PECVD device manufactured using the method described in the first aspect of the present invention.

[0033] In one or more embodiments, a corrosion-resistant film exists on the surface of the aluminum part in the deposition chamber of the corrosion-resistant PECVD equipment.

[0034] In one or more embodiments, the aluminum part is selected from one or more of the inner wall of a deposition chamber of a PECVD device, a heating plate, and a shower plate.

[0035] In one or more embodiments, the corrosion resistant film is aluminum oxide.

[0036] The third aspect of the present invention provides the use of a PECVD device for improving the corrosion resistance of aluminum parts in a deposition chamber of the PECVD device and / or for coating aluminum parts in a deposition chamber of the PECVD device. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is a schematic diagram of an apparatus for implementing the method of the present invention, wherein 1-spray plate, 2-heating plate, 3-cavity, 4-gas box. DETAILED DESCRIPTION

[0038] In order to enable those skilled in the art to understand the characteristics and effects of the present invention, the following is a general description and definition of the terms and expressions mentioned in the specification and claims. Unless otherwise specified, all technical and scientific terms used in the text are the common meanings understood by those skilled in the art for the present invention. In the event of a conflict, the definition in this specification shall prevail.

[0039] The theories or mechanisms described and disclosed herein, whether correct or incorrect, should not limit the scope of the present invention in any way, that is, the present invention can be implemented without being limited by any specific theory or mechanism.

[0040] Herein, “comprising”, “including”, “containing” and similar terms encompass the meanings of “consisting essentially of” and “consisting of”. For example, when “A comprises B and C” is disclosed herein, “A consists essentially of B and C” and “A consists of B and C” should be deemed to be disclosed herein.

[0041] In this article, all features such as values, quantities, contents and concentrations defined in the form of numerical ranges or percentage ranges are only for brevity and convenience. Accordingly, the description of numerical ranges or percentage ranges should be considered to have included and specifically disclosed all possible secondary ranges and individual values ​​within the range (including integers and fractions).

[0042] In this document, unless otherwise specified, percentage refers to mass percentage and ratio refers to mass ratio.

[0043] Herein, when describing embodiments or examples, it should be understood that they are not used to limit the present invention to these embodiments or examples. On the contrary, all substitutes, improvements and equivalents of the methods and materials described in the present invention can be included in the scope limited by the claims.

[0044] In this document, in order to make the description concise, not all possible combinations of various technical features in various embodiments or examples are described. Therefore, as long as there is no contradiction in the combination of these technical features, the various technical features in various embodiments or examples can be combined arbitrarily, and all possible combinations should be considered to be within the scope of this specification.

[0045] The present invention uses PECVD equipment to coat aluminum parts in a deposition chamber of the PECVD equipment, thereby improving the corrosion resistance of the aluminum parts in the deposition chamber. The PECVD equipment is a commonly used equipment in the semiconductor field. Figure 1 As shown, a heating plate 2 and a shower plate 1 are arranged opposite to each other in the cavity 3 of the device. The material of the inner wall of the deposition chamber of the PECVD device, the heating plate 2 and the shower plate 1 is generally Al. The material of the heating plate 2 and the shower plate 1 can also be other common materials such as ceramics.

[0046] In the PECVD device used in the method of the present invention, the heating plate 2 is grounded, and the shower plate 1 is connected to a power source. When the power source is turned on, the heating plate and the shower plate, as two electrodes disposed opposite to each other, will generate a radio frequency field in a relative space. The power source may be a power source commonly used in the art, for example, a DC power source.

[0047] The PECVD device of the present invention is also connected to a remote plasma source, such as an RPS remote plasma source. An air inlet is also provided on the shower plate. The gas box 4 is connected to the remote plasma source and the air inlet. In practical applications, the radio frequency field generated by the remote plasma source can excite the gas flowing out of the gas box 4 in the pipeline, and the plasma obtained after the excitation can enter the deposition chamber of the PECVD device through the air inlet.

[0048] Oxygen plasma can react with Al on the surface of aluminum parts and form dense Al 2 O 3 The present invention provides a coating method for aluminum parts in a deposition chamber of a PECVD device, comprising the steps of:

[0049] (1) introducing a first oxygen-containing gas and a first protective gas into the deposition chamber, heating a heating plate in the deposition chamber, turning on a power source connected to a shower plate in the deposition chamber, generating a radio frequency field in the deposition chamber, and performing a first plasma vapor deposition, thereby forming an aluminum oxide layer on the surface of the aluminum heating plate and / or shower plate;

[0050] (2) Turning off the power supply, introducing a plasma excited by a second oxygen-containing gas and a second protective gas into the deposition chamber, heating a heating disk in the deposition chamber, and performing a second plasma vapor deposition, thereby forming an aluminum oxide layer on the inner wall surface of the aluminum deposition chamber.

[0051] In step (1), the first oxygen-containing gas may be selected from N 2 O, O 2 and CO 2 One or more of, preferably N 2 O and O 2 The flow rate of the first oxygen-containing gas can be 400-10000sccm, for example, 800sccm, 1500sccm, 2000sccm, 4000sccm, 7000sccm, 9000sccm, or in a range composed of any two values, preferably 2000-5000sccm. Selecting the first oxygen-containing gas of the present invention and controlling its flow rate between 400-10000sccm is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluoride ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0052] The first protective gas can be selected from Ar, N 2 and He, preferably one or more of Ar and He. The flow rate of the first protective gas may be 400-16000sccm, such as 1000sccm, 3000sccm, 5000sccm, 7000sccm, 9000sccm, 15000sccm, or in a range between any two values, preferably 6000-9000sccm.

[0053] The heating temperature of the heating plate in step (1) can be 300-600° C., preferably 350-500° C., 400-450° C. Controlling the heating temperature of the heating plate in step (1) to be 300-600° C. is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluoride ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0054] The gas pressure during the first plasma vapor deposition in step (1) can be 5-8 torr, preferably 5-7 torr or 6-7 torr. Controlling the gas pressure during the first plasma vapor deposition in step (1) to be 5-8 torr is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluoride ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0055] The power of the radio frequency field in step (1) can be 50-500 W, for example, 100 W, 150 W, 250 W, 400 W, or in a range between any two values, preferably 250-500 W. Controlling the power of the radio frequency field in step (1) to be 50-500 W is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluoride ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0056] In some embodiments, the first plasma vapor deposition in step (1) is performed for 1-3 hours.

[0057] In step (2), a remote plasma source is used to excite a mixed gas of a second oxygen-containing gas and a second protective gas to obtain plasma.

[0058] The second oxygen-containing gas is selected from N 2 O, O 2 and CO 2 One or more of, preferably N 2 O and O 2 The flow rate of the second oxygen-containing gas can be 400-10000sccm, for example, 800sccm, 1500sccm, 2500sccm, 4000sccm, 7000sccm, 9000sccm, or in a range composed of any two values, preferably 2500-5000sccm. Selecting the second oxygen-containing gas of the present invention and controlling its flow rate between 400-10000sccm is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluoride ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0059] The second protective gas is selected from Ar, N 2 and He, preferably one or more of Ar and He. The flow rate of the second protective gas is 900-16000sccm, such as 2000sccm, 4000sccm, 8000sccm, 12000sccm, 15000sccm, or in the range of any two values, preferably 8000-16000sccm.

[0060] The heating temperature of the heating plate in step (2) is 300-600° C., preferably 350-500° C., 400-450° C. Controlling the heating temperature of the heating plate in step (2) to be 300-600° C. is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluoride ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0061] The gas pressure during the second plasma vapor deposition in step (2) is 2-8 torr, for example, 3 torr, 4 torr, 5 torr, 6 torr, 7 torr, 8 torr, or a range between any two values. Controlling the gas pressure during the second plasma vapor deposition in step (2) to be 2-8 torr is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluoride ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0062] The radio frequency power used to form the plasma in step (2) is 50-500 W, for example, 100 W, 150 W, 300 W, 400 W, or in a range between any two values, preferably 300-500 W. Controlling the radio frequency power used to form the plasma in step (2) to be 50-500 W is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluorine ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0063] In some embodiments, the second plasma vapor deposition time is 2-9 hours.

[0064] In some embodiments, the method of the present invention further comprises pretreatment. The pretreatment comprises: before performing step (1), a plasma excited by a purge gas and a third protective gas is introduced into the deposition chamber to purge to remove the oxide layer on the surface of the aluminum part in the deposition chamber. Specifically, a remote plasma source is turned on to generate a radio frequency field, and a mixed gas of the third protective gas and the purge gas is excited to purge in the PECVD equipment chamber to remove the oxide layer on the surface of the aluminum part in the chamber. In some embodiments, the oxide layer is a natural oxide layer, preferably a loose natural oxide layer.

[0065] In some embodiments, the third protective gas is selected from Ar, N 2 and He, preferably one or more of Ar and He. The flow rate of the third protective gas is 5000-15000sccm, such as 8000sccm, 10000sccm, 12000sccm, 15000sccm, or in the range of any two values, preferably 10000-15000sccm.

[0066] In some embodiments, the purge gas is selected from CF 4 and NF 3The flow rate of the purge gas may be 2000-8000 sccm, such as 3000 sccm, 5000 sccm, 8000 sccm, or in a range between any two values, preferably 2000-6000 sccm or 4000-8000 sccm.

[0067] Preferably, the pretreatment is performed at 300-600° C., preferably 350-500° C., 400-450° C. Controlling the pretreatment to be performed at 300-600° C. is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluoride ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0068] Furthermore, the gas pressure during the pretreatment can be 1-4 torr, such as 2 torr, 3 torr, 4 torr, or a range between any two values. Controlling the gas pressure during the pretreatment to be 1-4 torr is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluoride ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0069] Further, the radio frequency power of the radio frequency field that excites the mixed gas of the third protective gas and the purge gas can be 50-500 W, such as 100 W, 150 W, 300 W, 400 W, or in a range composed of any two values, preferably 300-500 W. Controlling the radio frequency power of the radio frequency field that excites the mixed gas of the third protective gas and the purge gas to be 50-500 W is conducive to forming a dense aluminum oxide layer on the surface of the aluminum device in the deposition chamber of the PECVD equipment, thereby improving the fluorine ion corrosion resistance of the aluminum device in the deposition chamber of the PECVD equipment.

[0070] Furthermore, the pretreatment is performed for 1-9 hours, such as 1-5 hours, 1-3 hours.

[0071] The present invention also provides a corrosion-resistant PECVD device prepared using the method of the present invention. A corrosion-resistant film exists on the surface of the aluminum parts in the deposition chamber of the corrosion-resistant PECVD device. Preferably, the corrosion resistance is resistance to fluoride ion corrosion. In some embodiments, the aluminum parts are selected from one or more of the inner wall of the deposition chamber of the PECVD device, the heating plate and the shower plate. In some embodiments, the corrosion-resistant film is aluminum oxide; preferably, the aluminum oxide is α-aluminum oxide. In some embodiments, the thickness of the corrosion-resistant film is 3-100 μm, for example 5 μm, 10 μm, 15 μm, 20 μm, 50 μm, 80 μm, or between any two numerical ranges.

[0072] The present invention also provides the use of a PECVD device for improving the corrosion resistance of an aluminum part in a deposition chamber of a PECVD device and / or coating an aluminum part in a deposition chamber of a PECVD device. In some embodiments, the corrosion resistance is improved by 1.5-2 times; preferably, by 1.5-1.8 times, for example, by 1.7 times. Preferably, the corrosion resistance is resistance to fluoride ion corrosion.

[0073] The present invention has the following beneficial effects:

[0074] (1) Using the radio frequency electric field of the PECVD equipment to 2 O / O 2 The excitation is oxygen plasma, and plasma oxidation is used to directly form a dense aluminum oxide layer on the surface of aluminum parts inside the PECVD vacuum chamber, thereby improving its resistance to fluoride ion corrosion.

[0075] (2) Based on the PECVD pressure and temperature control and radio frequency system, the plasma oxidation process can be accurately controlled to control the density, crystal type and thickness of the oxide layer on the surface of the aluminum parts.

[0076] (3) The RPS remote plasma source included in the PECVD equipment can be used to remove the loose natural oxide layer on the surface of the aluminum part, and then perform plasma oxidation treatment on the surface of the aluminum part.

[0077] Under high vacuum conditions, the ions of plasma oxidation have a larger mean free path increase, so that they carry higher energy when they reach the surface of the aluminum part. Compared with traditional coating technology, plasma oxidation can significantly reduce the temperature of oxide formation and avoid high temperature damage to the base material. Plasma oxidation technology has high requirements for pressure, temperature and electric field. The present invention can generate dense α-Al on the surface of aluminum parts by adjusting parameters such as gas flow, chamber pressure, temperature, and radio frequency power. 2 O 3 layer to improve its corrosion resistance.

[0078] Due to the high requirements for equipment, plasma oxidation is rarely used in the coating process of aluminum parts. The present invention utilizes the advantages of PECVD equipment itself, avoids disassembly and reprocessing, and directly performs plasma oxidation treatment on the aluminum parts in the vacuum chamber to improve their resistance to fluoride ion corrosion.

[0079] The present invention will be further described below in conjunction with specific examples. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. The experimental methods in the following examples without specifying specific conditions are usually based on conventional conditions or the conditions recommended by the manufacturer. Unless otherwise stated, percentages and parts are calculated by weight.

[0080] The method of the present invention is used to coat the aluminum parts in the chamber of the PECVD equipment. The aluminum parts in the chamber of the PECVD equipment include the inner wall of the chamber of the PECVD equipment and the spray plate. The heating plate is made of ceramic material.

[0081] Example 1

[0082] (1) Using RPS remote plasma source for plasma excitation, NF 3 The gas flow rate was 5000sccm, the Ar gas flow rate was 10000sccm, and the PECVD equipment chamber was purged for 2h under this condition to remove the loose oxide layer on the surface of the aluminum parts in the chamber;

[0083] (2) Heat the heating plate in the chamber to 400°C and control the pressure at 6 torr, N 2 O / O 2 The total gas flow rate is 2000 sccm, N 2 O and O 2 The flow rate of Ar / He gas is the same, the total flow rate of Ar / He gas is 9000sccm, the flow rates of Ar and He are the same, the power is turned on, the RF power generated by the electrode is 250W, the RF field is in the chamber, and the time is 3 hours;

[0084] (3) Turn off the radio frequency generated by the electrode in the chamber, use the RPS remote plasma source to excite the plasma, heat the heating plate to 400°C, and control the gas pressure at 3 torr, N 2 O / O 2 The total gas flow rate is 2500 sccm, N 2 O and O 2 The flow rate of is the same, the total flow rate of Ar / He gas is 8000sccm, the flow rates of Ar and He are the same, the RF power is 300W, and the time is 6 hours.

[0085] The spray plate was sliced ​​and the coating was observed using a scanning electron microscope. The coating thickness was 3-10 μm. The crystal form of the coating was determined to be α-alumina based on the XRD spectrum.

[0086] Test Case

[0087] Take the uncoated PECVD equipment and the PECVD equipment with aluminum parts coated in the chamber prepared in Example 1. The two PECVD equipments are operated continuously under the following conditions: plasma is excited by using RPS remote plasma source, NF 3 The flow rate is 5000sccm, the Ar gas flow rate is 10000sccm, and the etching is continuous for 48h.

[0088] After the etching was completed, the shower plates of the two devices were removed and the AlF formed on them was tested. 3The thickness of the AlF on the uncoated spray plate is the corrosion depth of the aluminum parts in the PECVD equipment chamber under the above working conditions. 3 The thickness is the AlF 3 The thickness is 1.7 times of that of the aluminum parts in the cavity of the PECVD equipment, indicating that the coating of the aluminum parts in the cavity by the method of the present invention can improve the ability of the aluminum parts in the cavity to resist fluoride ion corrosion.

Claims

1. A method for improving the fluorine ion corrosion resistance of aluminum parts in a deposition chamber of a PECVD device, characterized in that: The method comprises the following steps: (1) introducing a first oxygen-containing gas and a first protective gas into the deposition chamber, heating a heating plate in the deposition chamber, turning on a power source connected to a shower plate in the deposition chamber, generating a radio frequency field in the deposition chamber, and performing a first plasma vapor deposition, thereby forming an aluminum oxide layer on the surface of the aluminum heating plate and / or shower plate; (2) Turning off the power supply, introducing a plasma excited by a second oxygen-containing gas and a second protective gas into the deposition chamber, heating a heating disk in the deposition chamber, and performing a second plasma vapor deposition, thereby forming an aluminum oxide layer on the inner wall surface of the aluminum deposition chamber.

2. The method according to claim 1, characterized in that In step (1), the first oxygen-containing gas is selected from one or more of N2O, O2 and CO2.

3. The method according to claim 1, characterized in that In step (1), the flow rate of the first oxygen-containing gas is 400-10000 sccm.

4. The method according to claim 1, characterized in that In step (1), the first protective gas is selected from one or more of Ar, N2 and He.

5. The method according to claim 1, characterized in that In step (1), the flow rate of the first protective gas is 400-16000 sccm.

6. The method according to claim 1, characterized in that In step (1), the heating temperature of the heating plate is 300-600°C.

7. The method according to claim 1, characterized in that In step (1), the gas pressure during the first plasma vapor deposition is 5-8 torr.

8. The method according to claim 1, characterized in that In step (1), the power of the radio frequency field is 50-500W.

9. The method according to claim 1, characterized in that In step (1), the first plasma vapor deposition is performed for 1-3 hours.

10. The method according to claim 1, characterized in that In step (2), the second oxygen-containing gas is selected from one or more of N2O, O2 and CO2.

11. The method according to claim 1, characterized in that In step (2), the flow rate of the second oxygen-containing gas is 400-10000 sccm.

12. The method according to claim 1, characterized in that In step (2), the second protective gas is selected from one or more of Ar, N2 and He.

13. The method according to claim 1, characterized in that In step (2), the flow rate of the second protective gas is 900-16000 sccm.

14. The method according to claim 1, wherein: In step (2), the heating temperature of the heating plate is 300-600°C.

15. The method according to claim 1, wherein: In step (2), the gas pressure during the second plasma vapor deposition is 2-8 torr.

16. The method according to claim 1, wherein: In step (2), the radio frequency power used to form the plasma is 50-500W.

17. The method according to claim 1, wherein: In step (2), the second plasma vapor deposition is performed for 2-9 hours.

18. The method of claim 1, wherein: The method also includes pretreatment, which includes: before performing step (1), introducing plasma excited by a purge gas and a third protective gas into the deposition chamber for purge to remove an oxide layer on the surface of the aluminum part in the deposition chamber.

19. The method according to claim 18, characterized in that The third protective gas is selected from one or more of Ar, N2 and He.

20. The method of claim 18, wherein: The purge gas is selected from one or both of CF4 and NF3.

21. The method of claim 18, wherein: The flow rate of the third protective gas is 5000-15000 sccm.

22. The method of claim 18, wherein: The flow rate of the purge gas is 2000-8000 sccm.

23. The method of claim 18, wherein: The pretreatment is carried out at 300-600°C.

24. The method of claim 18, wherein: The pretreatment is carried out at 1-4 torr.

25. The method of claim 18, wherein: The oxide layer is a natural oxide layer.

26. A corrosion-resistant PECVD device made using the method of any one of claims 1-25.

27. The corrosion-resistant PECVD device according to claim 26, characterized in that: A corrosion-resistant film exists on the surface of the aluminum parts in the deposition chamber of the corrosion-resistant PECVD equipment.

28. The corrosion-resistant PECVD device according to claim 27, characterized in that: The aluminum part is selected from one or more of the inner wall of the deposition chamber of the PECVD equipment, the heating plate and the shower plate.

29. The corrosion-resistant PECVD apparatus of claim 26, wherein: The corrosion-resistant film is aluminum oxide.

30. Use of a PECVD device for improving the corrosion resistance of an aluminum part in a deposition chamber of a PECVD device and / or for coating an aluminum part in a deposition chamber of a PECVD device.

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