An internal insulation structure of an ion beam electric deflector and a withstand voltage test method thereof

Abstract

This invention relates to an internal insulation structure of an ion beam deflector and its withstand voltage testing method. The insulation structure includes a rectangular main plate, a Y-shaped support column, and connecting bolts. The rectangular main plate is made of polyetheretherketone (PEEK) material, and its length, width, and thickness must meet the insulation requirements between the Y-shaped support column and the electrode plate. Blind holes are used to fix the rectangular main plate to the internal electrode plate of the deflector, and countersunk holes are used to fix the rectangular main plate to the Y-shaped support column. Two types of connecting bolts are used: metal hexagonal head bolts pass through the blind holes to fix the rectangular main plate to the ground potential electrode plates on both sides, and PEEK hexagonal head bolts connect the rectangular main plate to the central high potential electrode plate and the Y-shaped support column through the countersunk holes and some blind holes. This invention achieves the design of insulation requirements between the two metals of the internal support column and electrode plate of an ion beam deflector and realizes the measurement of the withstand voltage value of this insulation structure.

Description

Technical Field

[0001] This invention is applied to the field of insulation safety protection, specifically relating to an internal insulation structure of an ion beam deflector and its withstand voltage test method. Background Technology

[0002] In a neutral beam injector, the high-energy ion beam generated by the beam source, after passing through the neutralizer, is primarily a mixture of high-energy neutral particles and high-energy charged particles; the ion component is called residual ions. To overcome the powerful magnetic field of a magnetic confinement fusion experimental device, the charged particles in the beam must be completely stripped away to obtain a neutral beam. The electric deflector, used to strip residual ions from the beam, is one of the key components of the neutral beam injector. The design of the electric deflector must carefully consider the insulation requirements between the electrodes and the support structure; different insulation components need to be designed depending on the different structures at the connection points.

[0003] As a key component of the neutral beam injector for negative ion sources to strip away residual charged particles and achieve beam neutralization, the performance of the electric deflector plays a crucial role in the steady-state operation of the neutral beam injector for negative ion sources and fusion reactor devices. In the current technology, there is no insulating plate used between the special Y-shaped support and the electrode plate, and it is impossible to detect local defects, moisture and aging of the insulating plate. There is also no method for withstand voltage testing of the insulating plate of the electric deflector. Summary of the Invention

[0004] To address the above technical problems, this invention proposes an internal insulation structure for an ion beam deflector and a method for testing its withstand voltage.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: an internal insulation structure for an ion beam deflector, the insulation structure comprising a cuboid main board, a Y-shaped support column, and connecting bolts. The cuboid main board has several blind holes and countersunk holes. The cuboid main board is made of polyetheretherketone (PEEK) material, and its length, width, and thickness must meet the insulation requirements between the Y-shaped support column and the electrode plate of the internal base of the deflector. The blind holes are used to fix the cuboid main board to the internal electrode plate of the deflector, and the countersunk holes are used to fix the cuboid main board to the Y-shaped support column. The connecting bolts are of two types: metal bolts and PEEK bolts. Some blind holes are connected to the ground potential electrode plate with metal bolts, and the countersunk holes are used to fix the cuboid main board to the Y-shaped support column. Other blind holes are connected to the cuboid main board to the high potential electrode plate with PEEK bolts.

[0006] A method for withstand voltage testing of the internal insulation structure of the aforementioned ion beam deflector includes the following steps:

[0007] The rectangular main board is fixed between the Y-shaped support column and the electrode plate;

[0008] A manually adjustable voltage source is used as the voltage generating terminal to generate high voltage from 0 to 300 kV;

[0009] Use a microamplitude meter as a current testing tool and connect it to a voltage source with a power cord.

[0010] Connect the other end of the voltage source to the metal water pipe extending from the high potential electrode in the middle of the deflector. After connecting the high potential, connect the other end of the voltage source to the external ground potential to form a circuit.

[0011] After the entire testing device is debugged and installed, manually adjust the set voltage value, set the initial voltage to 2kV, and record a set of data for every 0.1kV increase starting from 0.1kV until the breakdown protection phenomenon occurs and stop the experiment. The highest value obtained from the microammeter is the withstand voltage value of the cuboid main board.

[0012] The present invention has the following beneficial effects:

[0013] This invention designs an insulated cuboid mainboard to match the special Y-shaped support column inside the electric deflector. Two different types of bolts are used according to different potential requirements, so that a 2 cm insulation protection is formed between the support column and the electrode. The withstand voltage value of the cuboid mainboard can be known, which enhances safety.

[0014] Considering the increasing maturity of magnetic confinement fusion research, the size of fusion reactors is growing larger, and plasma parameters are becoming increasingly demanding. The existing cuboid mainboard structure of electric deflectors is insufficient to meet the high insulation requirements of the special structures in future negative ion source neutral beam injectors. This invention proposes an internal insulation structure for an ion beam electric deflector and its withstand voltage testing scheme. This structure can meet the high insulation requirements of special Y-shaped supports. Compared to traditional insulation boards, it offers greater adaptability and allows for the measurement of specific withstand voltage values, thus improving safety performance.

[0015] The blind via designed in this invention is a type of hole without through-holes on the surface of a cuboid motherboard, with its bottom embedded beneath the surface of the motherboard. The main advantage of a blind via is that it reduces the number of through-holes on the cuboid motherboard, thereby increasing its withstand voltage. Furthermore, blind vias can improve the electrical performance of the cuboid motherboard because they provide a better current flow path.

[0016] The countersunk hole designed in this invention avoids screw protrusion and ensures a flat mounting surface. By using two PEEK bolts through the countersunk hole to fix the cuboid mainboard to the Y-shaped support, the uniformity of the overall structure is increased, and the core components in the electric deflector are better protected from high-voltage damage.

[0017] Compared with the traditional method of disassembling individual components and then conducting withstand voltage tests, this method avoids cumbersome disassembly and assembly work and can directly measure the withstand voltage value by utilizing the principle of forming a closed loop between high and ground potentials.

[0018] This invention, while maintaining the insulation performance of traditional cuboid motherboards, increases adaptability and allows for the determination of its specific withstand voltage value through testing. This enables users to know its safe threshold range in advance, thus increasing safety. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the internal Y-shaped support column structure of the electric deflector;

[0020] Figure 2 This is a schematic diagram of a cuboid motherboard structure;

[0021] Figure 3 A schematic diagram showing the fixing of the rectangular main board and the Y-shaped support column;

[0022] Figure 4 This is a dimensional drawing of the cuboid motherboard;

[0023] Among them, 1. rectangular main board, 2. countersunk hole, 3. blind hole, 4. connecting bolt, 5. Y-shaped support column. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of the invention described below can be combined with each other as long as they do not conflict with each other. To achieve the above objectives, the invention adopts the following technical solutions.

[0025] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0026] Example 1:

[0027] Figure 1 The diagram shows the internal structure of the Y-shaped support column 5 of the electric deflector. The insulation structure consists of a rectangular main plate 1, the Y-shaped support column 5, and connecting bolts 4. The rectangular main plate 1 has countersunk holes 2 and blind holes 3, as shown... Figure 2 As shown. The rectangular main board 1 is fixed to the Y-shaped support column 5 using connecting bolts 4, as follows. Figure 3As shown, six blind holes 3 on one side of the cuboid main board 1 are connected to the ground potential electrode plate with metal bolts. Two countersunk holes 2 in the middle are used to fix the cuboid main board 1 to the Y-shaped support column 5. Six blind holes 3 on the other side are used to connect the cuboid main board 1 to the high potential electrode plate with PEEK bolts. The thickness of the cuboid main board 1 is 2 cm, which can form a partition between the Y-shaped support column 5 and the electrode plate, such as... Figure 4 As shown.

[0028] There are two types of connecting bolts 4: metal bolts and PEEK bolts. Some blind holes 3 are connected to the ground potential electrode plate with metal bolts, and countersunk holes 2 are used to fix the cuboid main board 1 to the Y-shaped support column 5. Other blind holes 3 are connected to the cuboid main board 1 to the high potential electrode plate with PEEK bolts.

[0029] The rectangular main board 1 is 24 cm long, 12 cm wide, and 2 cm thick, with beveled corners of 0.3 cm radius around its perimeter.

[0030] There are 12 blind holes 3, 6 of which are symmetrically distributed on one side of the rectangular main board 1 with the countersunk hole 2 as the center of symmetry. The diameter of the blind hole 3 is 0.8 cm and the thread depth is 1 cm.

[0031] There are two countersunk holes, each with a diameter of 0.9 cm. The countersunk diameter is 1.5 cm and the countersunk depth is 0.9 cm.

[0032] The metal bolts are metal hexagon socket head cap screws; the six blind holes 3 on one side of the rectangular main board 1 are connected to the ground potential electrode plate with metal hexagon socket head cap screws, and the two countersunk holes 2 in the middle are used to fix the rectangular main board 1 to the Y-shaped support column 5. The PEEK bolts are PEEK hexagon socket head cap screws, and the six blind holes 3 on the other side are connected to the high potential electrode plate with PEEK hexagon socket head cap screws.

[0033] A PEEK washer is placed between the metal bolt and the blind hole 2 and the countersunk hole 1.

[0034] This invention further proposes an internal insulation structure for an ion beam deflector and a withstand voltage test method thereof. The withstand voltage test method is as follows:

[0035] Take a Y-shaped support column 5 and fix the cuboid main board 1 between it and the electrode plate.

[0036] Check the connection of the cuboid mainboard 1 for any other impurities or metal. Place the experimental instrument at a safe distance of 2 to 3 meters from the electric deflector and check whether the instrument can operate normally.

[0037] Using a manually adjustable voltage source as the voltage generator, it can generate high voltage from 0 to 300 kilovolts.

[0038] Use a microammeter as the instrument for measuring withstand voltage, and connect the microammeter to a voltage source.

[0039] Connect the other end of the power source to the metal water pipe extending from the high-potential electrode in the middle of the deflector. After connecting the high potential, connect the other end of the power source to the external ground potential to form a circuit.

[0040] After connecting the instruments and equipment, set the initial voltage to 2kV. Starting from 0.1kV, record a set of data for each 0.1kV increase until the breakdown protection phenomenon occurs and stop the experiment. The highest value obtained from the ammeter is the withstand voltage value of the cuboid main board 1.

[0041] To reduce experimental error, the experiment can be repeated 2 to 3 times, and the final result is averaged.

[0042] The high-potential connection method involves using a copper power cord with metal clips at both ends. One end is clipped to the output end of the voltage source, and the other end is clipped to a metal water pipe that is at the same potential as the high-potential electrode plate.

[0043] The withstand voltage test method is as follows: the ammeter is connected to the voltage source and then to the high potential of the deflector. As the voltage increases, a creepage phenomenon will occur between the high potential and the ground potential. The cuboid motherboard 1 is located between the high potential and the ground potential. When the voltage increases to a range that the cuboid motherboard 1 cannot withstand, the device will automatically cut off the power and prompt overvoltage protection. Finally, the withstand voltage value of the cuboid motherboard 1 is obtained.

[0044] A dedicated current-limiting resistor is installed between the voltage source and the high potential of the cuboid main board 1. The dedicated current-limiting resistor is used to protect the instrument in case of electrical breakdown, and the discharge rod is used to release the residual current on the instrument after the experiment.

[0045] Although the illustrative specific embodiments of the present invention have been described above to enable those skilled in the art to understand the invention, it should be understood that the invention is not limited to the scope of the specific embodiments. For those skilled in the art, various changes will be obvious as long as they are within the spirit and scope of the invention as defined and determined by the appended claims, and all inventions utilizing the concept of the present invention are protected.

Claims

1. An internal insulation structure for an ion beam deflector, characterized in that: The insulating structure includes a rectangular main board, a Y-shaped support column, and connecting bolts. The rectangular main board has several blind holes and countersunk holes. The rectangular main board is made of polyetheretherketone (PEEK) material, and its length, width, and thickness must meet the insulation requirements between the Y-shaped support column and the electrode plate of the internal base of the electric deflector. The blind holes are used to fix the rectangular main board to the internal electrode plate of the electric deflector, and the countersunk holes are used to fix the rectangular main board to the Y-shaped support column. There are two types of connecting bolts: metal bolts and PEEK bolts. Some blind holes are connected to the ground potential electrode plate with metal bolts, and the countersunk holes are used to fix the rectangular main board to the Y-shaped support column. Other blind holes are connected to the rectangular main board to the high potential electrode plate with PEEK bolts. There are 12 blind holes, 6 of which are symmetrically distributed on one side of the rectangular main board with the countersunk hole as the center of symmetry. The diameter of the blind hole is 0.8 cm and the thread depth is 1 cm. The metal bolts are metal hexagon socket head cap screws; the six blind holes on one side of the rectangular main board are connected to the ground potential electrode plate with metal hexagon socket head cap screws, and the two countersunk holes in the middle are used to fix the rectangular main board to the Y-shaped support column. The PEEK bolts are PEEK hexagon socket head cap screws, and the six blind holes on the other side are connected to the high potential electrode plate with PEEK hexagon socket head cap screws.

2. The internal insulation structure of the ion beam deflector according to claim 1, characterized in that: The rectangular mainboard is 24 cm long, 12 cm wide, and 2 cm thick, with beveled corners of 0.3 cm radius on all four sides.

3. The internal insulation structure of the ion beam deflector according to claim 1, characterized in that: The countersunk holes are two in number, each with a diameter of 0.9 cm. The countersunk diameter is 1.5 cm and the countersunk depth is 0.9 cm.

4. The internal insulation structure of the ion beam deflector according to claim 1, 2, or 3, characterized in that: A PEEK washer is placed between the bolt and the blind hole and the countersunk hole.

5. A method for withstand voltage testing of the internal insulation structure of an ion beam deflector as described in any one of claims 1-4, characterized in that, Includes the following steps: The rectangular main board is fixed between the Y-shaped support column and the electrode plate; A manually adjustable voltage source is used as the voltage generating terminal to generate high voltage from 0 to 300 kV; Use a microamplitude meter as a current testing tool and connect it to a voltage source with a power cord. Connect the other end of the voltage source to the metal water pipe extending from the high potential electrode in the middle of the deflector. After connecting the high potential, connect the other end of the voltage source to the external ground potential to form a circuit. After the entire testing device is debugged and installed, manually adjust the set voltage value, set the initial voltage to 2kV, and record a set of data for every 0.1kV increase starting from 0.1kV until the breakdown protection phenomenon occurs and stop the experiment. The highest value obtained from the microammeter is the withstand voltage value of the cuboid main board. The feature is that the high-potential connection method is to select a copper power cord with metal clips at both ends, with one end clipped to the output end of the voltage source and the other end clipped to a metal water pipe that is at the same potential as the high-potential electrode plate.

6. The withstand voltage test method for the internal insulation structure of an ion beam deflector according to claim 5, characterized in that: The withstand voltage test method is as follows: the ammeter is connected to the voltage source and then to the high potential of the deflector. As the voltage increases, a creepage phenomenon will occur between the high potential and the ground potential. The cuboid motherboard is located between the high potential and the ground potential. When the voltage increases to a range that the cuboid motherboard cannot withstand, the device will automatically cut off the power and indicate overvoltage protection. Finally, the withstand voltage value of the cuboid motherboard is obtained.

7. The withstand voltage test method for the internal insulation structure of an ion beam deflector according to claim 6, characterized in that: A dedicated current-limiting resistor and a discharge rod are installed between the voltage source and the high potential of the cuboid mainboard. The current-limiting resistor is used to protect the instrument in case of electrical breakdown, and the discharge rod is used to release the residual current on the instrument after the experiment.

Images