A method for surface conductive treatment of a packaging substrate

Abstract

This application is applicable to the field of surface treatment technology, and provides a method for surface conductive treatment of a packaging carrier. The packaging carrier is placed under a temperature condition of 30-60°C for degreasing and charge adjustment treatment; the packaging carrier after degreasing and charge adjustment treatment is placed under a temperature condition of 10-40°C for five-stage countercurrent DI water washing treatment; the packaging carrier after water washing treatment is placed under a temperature condition of 20-40°C, and a zero-dimensional material treatment agent is used for conductive deposition treatment, with a water knife pressure of 5-30 Kg and a wire speed of 2-4 M / min; the packaging carrier after conductive deposition treatment is placed under a temperature condition of 80-100°C for drying treatment; through the deposition of zero-dimensional conductive materials, this application realizes full-board conductivity, solves the improvement and optimization of the process flow of leadless nickel plating and thick gold plating, improves the quality and reduces the cost. This process does not require flash plating, simplifies the process, and reduces environmental pollution.

Description

Technical Field

[0001] The present application belongs to the field of surface treatment technology, and in particular, relates to a method for conducting the surface of a packaging carrier. Background Art

[0002] The process flow of the traditional leadless nickel-gold (NPL) plating process for packaging substrates mainly involves the following aspects: leadless selective plating must achieve full-board conductivity on the selectively plated product, generally using sputtered copper or chemical copper followed by flash copper plating to achieve full-board conductivity; the selectively plated pads or gold fingers are exposed through the image transfer technology of the photosensitive dry film; the positions are plated with thick nickel gold or other precious metals; the other photosensitive dry film layers on the board are removed through the film stripping process; the original flash-plated copper is flash-etched through the flash etching process, so that the original circuit is flash-etched again, thereby completing the NPL process of the entire packaging substrate.

[0003] At present, this type of products all use vacuum magnetron sputtering copper or chemical copper technology. Among them, the chemical copper process mainly involves alkaline whole-pore degreasing, three-stage countercurrent water washing, micro-etching, two-stage countercurrent water washing, pre-impregnation, activation, chemical copper plating and other processes; while the flash plating process mainly involves acid degreasing, acid pre-impregnation, copper sulfate electroplating and other processes; the sputtering process has expensive target materials and high costs, and mainly involves cleaning base materials, evaporating the bottom layer, creating a vacuum environment, cold trap cooling, argon injection, sputtering and other processes; graphic transfer mainly involves substrate surface cleaning, film pasting, alignment exposure, development and other processes; the flash etching process mainly involves selective nickel-gold plating, film stripping, two-stage countercurrent water washing, flash etching and other processes. Specifically, the chemical copper process is a catalytic redox reaction, which will produce more by-products, and the vertical copper deposition process takes 60-90 minutes, and the horizontal copper deposition process takes 30-50 minutes. It has the problems of long process, low efficiency, and severe environmental pollution. It is not resistant to acid and alkali, not resistant to oxidation, and the main material has a certain service life. The sputtering copper process is to sputter a copper film layer after evaporation treatment. The process takes 20-30 minutes. It has the problems of high cost, long process, low efficiency, and severe environmental pollution. It is not resistant to acid and alkali, not resistant to oxidation, and the target material cannot be recycled.

[0004] It can be seen that traditional sputtering or chemical copper processes generally have problems such as long process, low efficiency, acid and alkali resistance, oxidation resistance, severe environmental pollution, and low yield rate. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a method for conductive treatment of the surface of a packaging carrier, aiming to solve the problems commonly existing in traditional sputtering or chemical copper processes, such as long process, low efficiency, acid and alkali resistance, oxidation resistance, severe environmental pollution, and low yield rate.

[0006] The embodiment of the present application is implemented as follows. A method for surface conductive treatment of a packaging carrier board includes:

[0007] Placing the packaging carrier board under a temperature condition of 30 - 60 °C for degreasing and charge adjustment treatment;

[0008] Placing the packaging carrier board after degreasing and charge adjustment treatment under a temperature condition of 10 - 40 °C for five - stage counter - current DI water washing treatment, with the conductivity of the water replacement frequency being 1 - 10 S / m and the water flow rate being 5 - 30 L / min;

[0009] Placing the packaging carrier board after water washing treatment under a temperature condition of 20 - 40 °C, and performing conductive deposition treatment with a zero - dimensional material treatment agent, with the water knife pressure being 5 - 30 Kg and the wire speed being 2 - 4 M / min; the zero - dimensional material is one or both of graphene quantum dots or carbon particles with a diameter below 100 nm;

[0010] Placing the packaging carrier board after conductive deposition treatment under a temperature condition of 80 - 100 °C for drying treatment;

[0011] Removing the redundant conductive layer of the circuit pattern that is not required on the surface of the packaging carrier board through plasma or ultrasonic waves;

[0012] Performing five - stage counter - current DI water washing treatment and drying treatment on the packaging carrier board after removing the redundant conductive layer.

[0013] Preferably, the zero - dimensional material treatment agent is composed of raw materials with the following mass percentages:

[0014] Zero - dimensional material 0.5 - 1.5%, stabilizer 0.01% - 0.2%, deionized water 95 - 98%, and the balance is a pH regulator, and the pH value of the system is adjusted to 6 - 9 by the pH regulator.

[0015] Preferably, the pH value of the zero - dimensional material treatment agent is 6 - 9, and the solid content is 0.01 - 1%.

[0016] Preferably, the stabilizer is one or several of PVP, PVR, PEG, PCR; the pH regulator is one or several solutions of sulfuric acid, hydrochloric acid, sodium hydroxide, potassium hydroxide, ammonia water.

[0017] Preferably, a degreasing and charge adjustment agent is used to perform degreasing and charge adjustment treatment on the packaging carrier board. The concentration of the degreasing and charge adjustment agent is 1 - 10%, the pH value is 10 - 14, the base equivalent is 0.01 - 0.25 N, and the service life is with a copper content of 15 - 25 mg / L.

[0018] Preferably, during the drying process of placing the package substrate after the conductive deposition treatment at a temperature of 80-100°C, the air knife pressure is 300-1000 Pa.

[0019] Preferably, in the step of using plasma to remove the excess conductive layer on the surface of the package substrate, the equipment power is 600-1000 W, the vacuum degree is -75 to -30 KPa, the temperature is 80-200°C, and the time is 60-120 s.

[0020] Preferably, in the step of using ultrasonic waves to remove the excess conductive layer on the surface of the package substrate, the equipment power is 300-1000 W, the frequency is 20-60 Hz, the chemical solution concentration is 2-10%, the temperature is 25-45°C, the pH value is 9-15, and the wire speed is 2-4 m / min.

[0021] Preferably, the steps of performing five-stage countercurrent DI water washing treatment and drying treatment on the package substrate after removing the excess conductive layer include:

[0022] Placing the package substrate after removing the excess conductive layer under the temperature condition of 10-40°C for five-stage countercurrent DI water washing treatment, the conductivity of the water change frequency is 1-10 S / m, and the water flow rate is 5-30 L / min;

[0023] Placing the package substrate under the temperature condition of 80-100°C for drying treatment, and the air knife pressure is 300-1000 Pa.

[0024] The method for surface conductive treatment of the package substrate provided by the embodiment of the present application realizes full-board conductivity through the deposition of zero-dimensional conductive materials, solves the improvement and optimization of the process flow of leadless nickel plating and thick gold plating, improves the quality and reduces the cost. This process does not require flash plating, simplifies the process, and reduces environmental pollution; in addition, the present application effectively replaces the original vacuum magnetron sputtering copper or electroless copper process, and makes selective electroplating easier to achieve through the conductive characteristics of zero-dimensional conductive materials; in addition, after the selective electroplating is completed in the present application, the flash etching process of the original process is cancelled, and the excess zero-dimensional conductive material conductive layer can be effectively removed by physical and chemical methods that do not damage the circuit electroplated copper, thereby further simplifying the process and reducing the quality risk and environmental pollution brought by the flash etching process of the original process. Specific Embodiments

[0025] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0026] The embodiment of the present application provides a method for surface conductive treatment of a packaging substrate. The process flow replaced in the NPL process includes: in non-lead selective electroplating, it is necessary to achieve full-board conductivity for the selective electroplating product, and the deposition of 0D conductive materials to achieve full-board conductivity. This process does not require flash plating, simplifies the process, and reduces environmental pollution; for positions such as pads or gold fingers of selective electroplating, the image transfer technology of photosensitive dry film is used to expose these positions, and these positions are processed by electroplating nickel thick gold or other precious metals. Through the film stripping process, other photosensitive dry film layers on the board surface are removed, and the 0D conductive material conductive layer originally deposited is removed by physical plasma and ultrasonic technology, so that the 0D conductive material conductive layer between the original circuits and circuits is completely removed, optimizing and simplifying the process and reducing environmental pollution, thus completing the NPL process of the entire packaging substrate.

[0027] Specifically, a method for surface conductive treatment of a packaging substrate provided by the embodiment of the present application includes:

[0028] Placing the packaging substrate under a temperature condition of 30~60°C for degreasing and charge adjustment treatment;

[0029] Placing the packaging substrate after degreasing and charge adjustment treatment under a temperature condition of 10~40°C for five-stage countercurrent DI water washing treatment, with the conductivity of the water change frequency being 1~10 S / m and the water flow rate being 5~30 L / min;

[0030] Placing the packaging substrate after water washing treatment under a temperature condition of 20~40°C, and performing conductive deposition treatment with a 0D material treatment agent, with the water knife pressure being 5~30 Kg and the line speed being 2~4 M / min;

[0031] Placing the packaging substrate after conductive deposition treatment under a temperature condition of 80~100°C for drying treatment;

[0032] Removing the redundant conductive layer on the surface of the packaging substrate that is not required for the circuit pattern through plasma or ultrasonic waves;

[0033] Performing five-stage countercurrent DI water washing treatment and drying treatment on the packaging substrate after removing the redundant conductive layer.

[0034] Among them, the degreasing and charge adjustment treatment, five-stage countercurrent DI water washing treatment, conductivity deposition treatment, and drying treatment in the above processes can be implemented based on existing commercially available equipment. For example, the equipment can be the TGM-NPL-H-000 horizontal zero-dimensional conductive material processing and production equipment produced by Semix Jin in cooperation with Julong, Dongwei, Cosmos, etc. In the above processes, the zero-dimensional conductive material layer can be removed by plasma or ultrasonic waves using the TGM-NPL-H-000 horizontal ultrasonic cleaning equipment produced by Semix Jin in cooperation with Julong, Dongwei, Cosmos, etc.; or the vacuum plasma cleaning equipment of brands such as Chengfengzhi model: CRF-VP0-8L-M and Jinbolilai VP120L can be used for implementation.

[0035] Among them, the encapsulation carrier board is subjected to degreasing and charge adjustment treatment using a degreasing and charge adjustment agent. The line speed is 2 - 4 m / min (the working time of the workpiece is approximately 1 - 4 min). The concentration of the degreasing and charge adjustment agent is 1 - 10%, the pH value is 10 - 14, the alkali equivalent is 0.01 - 0.25 N, and the service life is a copper content of 15 - 25 mg / L. The purpose of this process is to remove the contamination on the surface of the organic encapsulation substrate after hole filling and adjust the charge, so as to make the adsorption of the zero-dimensional conductive material layer more firm. The degreasing and charge adjustment agent can be the TGM-NPL-001 model product purchased from Semix Jin.

[0036] Among them, the encapsulation carrier board after degreasing and charge adjustment treatment is placed under a temperature condition of 10 - 40°C for five-stage countercurrent DI water washing treatment. The water change frequency conductivity is 1 - 10 S / m, the water flow rate is 5 - 30 L / min, and the line speed is 2 - 4 m / min (the working time of the workpiece is approximately 1 - 4 min). The purpose of this process is to wash away the excess degreasing and charge adjustment agent to avoid contamination of the chemicals in the subsequent processes caused by residues.

[0037] Among them, the encapsulation carrier board after water washing treatment is placed under a temperature condition of 20 - 40°C, and conductivity deposition treatment is carried out using a zero-dimensional material treatment agent. The water jet pressure is 5 - 30 Kg, and the line speed is 2 - 4 m / min (the working time of the workpiece is approximately 6 - 8 min); this process is the core process for depositing the zero-dimensional conductive material to form a conductive layer, replacing the flash plating process in the traditional process.

[0038] Among them, the zero-dimensional material treatment agent is composed of zero-dimensional materials, stabilizers, pH regulators, and deionized water; the zero-dimensional materials are one or two of graphene quantum dots with a diameter below 100 nm (graphene materials with three-dimensional dimensions all below 100 nm) or carbon particles; the stabilizer can be a small molecule or a polymer such as one or several of PVP, PVR, PEG, PCR, etc.; the pH value adjuster can be an inorganic acid or a base, such as one or several solutions of sulfuric acid, hydrochloric acid, sodium hydroxide, ammonia water, potassium hydroxide, etc.

[0039] Preferably, the pH value of the zero-dimensional material treatment agent is 6-9, and the solid content is 0.01-1%. The zero-dimensional material treatment agent is composed of the following raw materials in mass percentages:

[0040] Zero-dimensional materials 0.5-1.5%, stabilizer 0.01%-0.2%, deionized water 95-98%, and the balance is the pH regulator, and the pH value of the system is adjusted to 6-9 by the pH regulator.

[0041] Among them, the packaged carrier plate after conductive deposition treatment is dried under the temperature condition of 80-100 °C, and the line speed is 2-4 m / min (the working time of the workpiece is about 2-4 min), which is the process of fixing the 0-dimensional conductive material deposited to form a conductive layer and removing moisture.

[0042] Among them, the redundant conductive layer of the circuit pattern that is not required on the surface of the packaged carrier plate is removed by plasma or ultrasonic waves. In the step of removing the redundant conductive layer on the surface of the packaged carrier plate by plasma, the equipment power is 600-1000 W, the vacuum degree is -75--30 kPa, the temperature is 80-200 °C, and the time is 60-120 s. In the step of removing the redundant conductive layer on the surface of the packaged carrier plate by ultrasonic waves, the equipment power is 300-1000 W, the frequency is 20-60 Hz, the concentration of the liquid medicine is 2-10%, the temperature is 25-45 °C, the pH value is 9-15, and the line speed is 2-4 m / min (the working time of the workpiece is about 2-4 min). This is the process of removing the redundant 0-dimensional conductive material layer, replacing the flash etching process in the original process.

[0043] Among them, the steps of performing five-stage countercurrent DI water washing treatment and drying treatment on the packaged carrier plate after removing the redundant conductive layer include:

[0044] The packaged carrier plate after removing the redundant conductive layer is subjected to five-stage countercurrent DI water washing treatment under the temperature condition of 10-40 °C, the conductivity of the water change frequency is 1-10 S / m, the water flow rate is 5-30 L / min, and the line speed is 2-4 m / min (the working time of the workpiece is about 2-4 min);

[0045] The encapsulated carrier board is dried at a temperature of 80-100°C, with an air knife pressure of 300-1000 Pa and a line speed of 2-4 m / min (the working time of the workpiece is about 2-4 minutes). This is the process of drying the moisture on the encapsulated carrier board to ensure that the board surface will not be oxidized due to moisture.

[0046] The following describes in detail the method for electrically conductive treatment of the non-metallic surface of the organic packaging substrate of the present application with specific embodiments as follows. The experimental methods used in the following embodiments are all conventional methods unless otherwise specified; the materials, reagents, etc. used can be obtained from commercial sources unless otherwise specified.

[0047] Equipment used: TGM-NPL-H-000 horizontal 0D conductive material processing and production equipment, TGM-NPL-H-000 horizontal ultrasonic cleaning equipment, and Jinbolilai VP120L vacuum plasma cleaning equipment produced by Semixijin in cooperation with Julong, Dongwei, Cosmos, etc.

[0048] Reagents used: degreasing and charge adjustment agent (model TGM-NPL-001), ultrasonic agent (model: TGM-NPL-003).

[0049] The selected workpiece is a PCB or carrier board (IC substrate) product with gold fingers that need to be plated with leadless gold.

[0050] Example 1: Method for electrically conductive treatment of the surface of the encapsulated carrier board

[0051] The zero-dimensional material treatment agent is composed of the following raw materials by mass percentage:

[0052] Graphene quantum dots 1.0%, PVP 0.03%, deionized water 95%, and the balance is potassium hydroxide solution, and the pH value of the system is adjusted to 6 with the potassium hydroxide solution.

[0053] Process 1: Use the degreasing and charge adjustment agent to perform degreasing and charge adjustment treatment on the encapsulated carrier board after hole filling. The temperature is 40°C, the line speed is 2 m / min, and the time is 4 minutes; the concentration of the degreasing and charge adjustment agent is 3%, the pH value is 10, the alkali equivalent is 0.1 N, and the service life is 15 mg / L of copper content.

[0054] Process 2: Perform five-stage countercurrent DI water washing treatment on the encapsulated carrier board after degreasing and charge adjustment treatment. The temperature is 20°C, the water change frequency conductivity is 5 S / m, the water flow rate is 6 L / min, the line speed is 2 m / min, and the time is 4 minutes.

[0055] Process 3: Place the encapsulation carrier board after water washing treatment under the temperature condition of 30°C, and conduct conductive deposition treatment with a zero-dimensional material treatment agent. The water jet pressure is 10 Kg, the wire speed is 2 M / min, and the time is 8 min; the pH value of the zero-dimensional material treatment agent is 6, and the solid content is 0.03%.

[0056] Process 4: Place the encapsulation carrier board after conductive deposition treatment under the temperature condition of 80°C for the first drying treatment. The air knife pressure is 400 pa, the wire speed is 2 M / min, and the time is 4 min.

[0057] Process 5: Use plasma to remove the redundant conductive layer of the unnecessary pattern on the surface of the encapsulation carrier board obtained by the above treatment. The equipment power is 600 W, the vacuum degree is -30 KPa, the temperature is 120°C, and the time is 70 s.

[0058] Process 6: Conduct five-stage countercurrent DI water washing treatment on the encapsulation carrier board after removing the redundant conductive layer. The temperature is 20°C, the conductivity of the water change frequency is 3 S / m, the water flow rate is 6 L / min, the wire speed is 2 M / min, and the time is 3 min.

[0059] Process 7: Conduct drying treatment on the encapsulation carrier board after water washing treatment. The temperature is 80°C, the air knife pressure is 400 pa, the wire speed is 2 M / min, and the time is 3 min.

[0060] Example 2: Conductive surface treatment method of encapsulation carrier board

[0061] The zero-dimensional material treatment agent is composed of the following raw materials by mass percentage:

[0062] Zero-dimensional carbon particles 0.5%, PVR 0.04%, deionized water 96%, and the balance is potassium hydroxide solution. The pH value of the system is adjusted to 7 by the potassium hydroxide solution.

[0063] Process 1: Use the degreasing and charge adjustment agent to conduct degreasing and charge adjustment treatment on the encapsulation carrier board after hole filling. The temperature is 45°C, the wire speed is 2.5 M / min, and the time is 3.5 min; the concentration of the degreasing and charge adjustment agent is 4%, the pH value is 10.5, the alkali equivalent is 0.12 N, and the service life is 15 mg / L of copper content.

[0064] Process 2: Conduct five-stage countercurrent DI water washing treatment on the encapsulation carrier board after degreasing and charge adjustment treatment. The temperature is 22°C, the conductivity of the water change frequency is 6 S / m, the water flow rate is 20 L / min, the wire speed is 3.5 M / min, and the time is 3 min.

[0065] Process 3: Place the encapsulated carrier board after water washing treatment under the temperature condition of 25°C, and conduct conductive deposition treatment with a zero-dimensional material treatment agent. The water jet pressure is 25 Kg, the wire speed is 2.5 M / min, and the time is 7.5 min; the pH value of the zero-dimensional material treatment agent is 7, and the solid content is 0.06%.

[0066] Process 4: Place the encapsulated carrier board after conductive deposition treatment under the temperature condition of 90°C for the first drying treatment. The air knife pressure is 700 pa, the wire speed is 3 M / min, and the time is 3.5 min.

[0067] Process 5: Use plasma to remove the redundant conductive layer of the unnecessary pattern on the surface of the encapsulated carrier board obtained by the above treatment. The equipment power is 600 W, the vacuum degree is -75 KPa, the temperature is 100°C, and the time is 60 s.

[0068] Process 6: Conduct five-stage countercurrent DI water washing treatment on the encapsulated carrier board after removing the redundant conductive layer. The temperature is 30°C, the conductivity of the water change frequency is 2 S / m, the water flow rate is 5 L / min, the wire speed is 2.5 M / min, and the time is 3.5 min.

[0069] Process 7: Conduct drying treatment on the encapsulated carrier board after water washing treatment. The temperature is 90°C, the air knife pressure is 700 pa, the wire speed is 2.5 M / min, and the time is 3.5 min.

[0070] Example 3: Method for Conductive Treatment on the Surface of Encapsulated Carrier Board

[0071] The zero-dimensional material treatment agent is composed of the following raw materials in mass percentage:

[0072] Graphene quantum dots 0.7%, PEG 0.08%, deionized water 96.5%, and the balance is potassium hydroxide solution. The pH value of the system is adjusted to 7.5 by the potassium hydroxide solution.

[0073] The selected workpiece is a PCB or carrier board (IC substrate) product of a gold finger that needs to be plated with lead-free gold.

[0074] Process 1: Use a degreasing and charge adjustment agent to conduct degreasing and charge adjustment treatment on the encapsulated carrier board after hole filling. The temperature is 30°C, the wire speed is 3 M / min, and the time is 3 min; the concentration of the degreasing and charge adjustment agent is 5%, the pH value is 11, the alkali equivalent is 0.16 N, and the service life is 20 mg / L of copper content.

[0075] Process 2: Conduct five-stage countercurrent DI water washing treatment on the encapsulated carrier board after degreasing and charge adjustment treatment. The temperature is 25°C, the conductivity of the water change frequency is 1 S / m, the water flow rate is 15 L / min, the wire speed is 3 M / min, and the time is 3 min.

[0076] Process 3: Place the encapsulated carrier board after the water washing treatment under the temperature condition of 25°C, and conduct conductive deposition treatment using the zero-dimensional material treatment agent. The water jet pressure is 20 Kg, the wire speed is 3 M / min, and the time is 7 min; the pH value of the zero-dimensional material treatment agent is 7.5, and the solid content is 0.07%.

[0077] Process 4: Place the encapsulated carrier board after the conductive deposition treatment under the temperature condition of 95°C for the first drying treatment. The air knife pressure is 500 pa, the wire speed is 3 M / min, and the time is 3 min.

[0078] Process 5: Use plasma to remove the redundant conductive layer of the unnecessary pattern on the surface of the encapsulated carrier board obtained by the above treatment. The equipment power is 800 W, the vacuum degree is -45 KPa, the temperature is 100°C, and the time is 100 s.

[0079] Process 6: Conduct five-stage countercurrent DI water washing treatment on the encapsulated carrier board after removing the redundant conductive layer. The temperature is 26°C, the conductivity of the water change frequency is 5 S / m, the water flow rate is 12 L / min, the wire speed is 3 M / min, and the time is 3 min.

[0080] Process 7: Conduct drying treatment on the encapsulated carrier board after the water washing treatment. The temperature is 95°C, the air knife pressure is 500 pa, the wire speed is 2 M / min, and the time is 3 min.

[0081] Example 4: Method for Conductive Treatment on the Surface of Encapsulated Carrier Board

[0082] The zero-dimensional material treatment agent is composed of the following raw materials by mass percentage:

[0083] Graphene quantum dots 0.8%, PCR 0.05%, deionized water 95 - 98%, and the balance is potassium hydroxide solution. The pH value of the system is adjusted to 7.8 by the potassium hydroxide solution.

[0084] Process 1: Use the degreasing and charge adjustment agent to conduct degreasing and charge adjustment treatment on the encapsulated carrier board after hole filling. The temperature is 50°C, the wire speed is 3.5 M / min, and the time is 2.8 min; the concentration of the degreasing and charge adjustment agent is 8%, the pH value is 12, the alkali equivalent is 0.18 N, and the service life is 22 mg / L of copper content.

[0085] Process 2: Conduct five-stage countercurrent DI water washing treatment on the encapsulated carrier board after the degreasing and charge adjustment treatment. The temperature is 28°C, the conductivity of the water change frequency is 9 S / m, the water flow rate is 25 L / min, the wire speed is 3.5 M / min, and the time is 2.8 min.

[0086] Process 3: Place the encapsulation carrier board after the water washing treatment under the temperature condition of 38°C, and conduct conductive deposition treatment using the zero-dimensional material treatment agent. The water jet pressure is 26 Kg, the wire speed is 3.5 M / min, and the time is 7 min; the pH value of the zero-dimensional material treatment agent is 7.8, and the solid content is 0.09%.

[0087] Process 4: Place the encapsulation carrier board after the conductive deposition treatment under the temperature condition of 96°C for the first drying treatment. The air knife pressure is 900 pa, the wire speed is 3.5 M / min, and the time is 3.5 min.

[0088] Process 5: Use ultrasonic waves to remove the redundant conductive layer of the unnecessary pattern on the surface of the encapsulation carrier board obtained by the above treatment. The equipment power is 800 W, the frequency is 40 Hz, the chemical solution concentration is 5%, the temperature is 20°C, the pH value is 10, the wire speed is 3 M / min, and the time is 3.5 min.

[0089] Process 6: Conduct five-stage countercurrent DI water washing treatment on the encapsulation carrier board after removing the redundant conductive layer. The temperature is 28°C, the conductivity of the water change frequency is 9 S / m, the water flow rate is 25 L / min, the wire speed is 3.5 M / min, and the time is 2.8 min.

[0090] Process 7: Conduct drying treatment on the encapsulation carrier board after the water washing treatment. The temperature is 96°C, the air knife pressure is 900 pa, the wire speed is 3.5 M / min, and the time is 3.5 min.

[0091] Example 5: Method for Conductive Treatment on the Surface of the Encapsulation Carrier Board

[0092] The zero-dimensional material treatment agent is composed of the following raw materials by mass percentage:

[0093] Graphene quantum dots 1.5%, PVP 0.2%, deionized water 98%, and the balance is potassium hydroxide solution. The pH value of the system is adjusted to 9 by the potassium hydroxide solution.

[0094] Process 1: Use the degreasing and charge adjustment agent to conduct degreasing and charge adjustment treatment on the encapsulation carrier board after hole filling. The temperature is 60°C, the wire speed is 4 M / min, and the time is 2 min; the concentration of the degreasing and charge adjustment agent is 10%, the pH value is 14, the alkali equivalent is 0.25 N, and the service life is 25 mg / L of copper content.

[0095] Process 2: Conduct five-stage countercurrent DI water washing treatment on the encapsulation carrier board after the degreasing and charge adjustment treatment. The temperature is 40°C, the conductivity of the water change frequency is 10 S / m, the water flow rate is 30 L / min, the wire speed is 4 M / min, and the time is 2 min.

[0096] Process 3: Place the encapsulated carrier board after water washing treatment under the temperature condition of 40°C, and conduct conductive deposition treatment with a zero-dimensional material treatment agent. The water jet pressure is 30 Kg, the wire speed is 4 M / min, and the time is 6 min; the pH value of the zero-dimensional material treatment agent is 9, and the solid content is 1%.

[0097] Process 4: Place the encapsulated carrier board after conductive deposition treatment under the temperature condition of 100°C for the first drying treatment. The air knife pressure is 1000 pa, the wire speed is 4 M / min, and the time is 2 min.

[0098] Process 5: Use ultrasonic waves to remove the redundant conductive layer of the unwanted pattern on the surface of the encapsulated carrier board obtained from the above treatment. The equipment power is 1000 W, the frequency is 60 Hz, the chemical solution concentration is 10%, the temperature is 45°C, the pH value is 15, the wire speed is 4 M / min, and the time is 2 min.

[0099] Process 6: Conduct a five-stage countercurrent DI water washing treatment on the encapsulated carrier board after removing the redundant conductive layer. The temperature is 40°C, the conductivity of the water change frequency is 10 S / m, the water flow rate is 30 L / min, the wire speed is 4 M / min, and the time is 2 min.

[0100] Process 7: Conduct a drying treatment on the encapsulated carrier board after water washing treatment. The temperature is 100°C, the air knife pressure is 1000 pa, the wire speed is 4 M / min, and the time is 2 min.

[0101] Use test pieces (the test pieces are FR-4 insulating board materials of 60*100 mm), and produce them respectively according to the process of depositing the zero-dimensional conductive material layer in the above Examples 1-5. Measure the resistance value of the 100 mm long side of the produced test pieces to be between 100 Ω and 1000 Ω, which indicates that the deposition effect of the zero-dimensional conductive material in Examples 1-5 is good.

[0102] Furthermore, conduct acid resistance, alkali resistance, carbonic acid solution resistance, antioxidant ability, and tensile strength tests on the encapsulated carrier boards obtained from the treatment of Examples 1-5. The test results are shown in Table 1 below:

[0103] Table 1

[0104] Furthermore, use qualified deposition test pieces for detecting the deposition effect of the zero-dimensional conductive material (the test pieces are FR-4 insulating board materials of 60*100 mm) and produce them respectively according to the normal process of removing the zero-dimensional conductive material in the above Examples 1-5. Measure the resistance value of the 100 mm long side of the produced test pieces to be infinite, which means it is removed completely.

[0105] The above-described embodiments merely represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

[0106] The above is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for surface conductivity treatment of zero-dimensional materials on a packaging carrier board, characterized in that, Including: Placing the encapsulated carrier board under the temperature condition of 30~60°C for degreasing and charge adjustment treatment; Placing the encapsulated carrier board after degreasing and charge adjustment treatment under the temperature condition of 10~40°C for five-stage countercurrent DI water washing treatment, with the conductivity of the water change frequency being 1~10 S / m and the water flow rate being 5~30 L / min; Placing the water-washed encapsulated carrier board under the temperature condition of 20~40°C and performing conductive deposition treatment with a zero-dimensional material treatment agent, with the water knife pressure being 5~30 kgf / cm² and the line speed being 2~4 m / min; the zero-dimensional material treatment agent is composed of zero-dimensional materials, stabilizers, pH regulators, and deionized water; the zero-dimensional material is one or two of graphene quantum dots or carbon particles with a diameter below 100 nm; Placing the encapsulated carrier board after conductive deposition treatment under the temperature condition of 80~100°C for drying treatment; Removing the redundant conductive layer of the circuit pattern that is not required on the surface of the encapsulated carrier board through plasma or ultrasonic waves; Performing five-stage countercurrent DI water washing treatment and drying treatment on the encapsulated carrier board after removing the redundant conductive layer; The zero-dimensional material treatment agent is composed of raw materials with the following mass percentages: Zero-dimensional material 0.5 - 1.5%, stabilizer 0.01% - 0.2%, deionized water 95 - 98%, and the balance is the pH regulator, and the pH value of the system is adjusted to 6 - 9 by the pH regulator; The pH value of the zero-dimensional material treatment agent is 6~9, and the solid content is 0.01~1%; The pH regulator is one or several solutions of sulfuric acid, hydrochloric acid, sodium hydroxide, potassium hydroxide, ammonia water, etc.; The stabilizer is one or several of PVP, PVR, PEG, PCR; 2. The surface conductive treatment method for zero-dimensional materials of the encapsulation carrier board according to claim 1, wherein, Using a degreasing and charge adjustment agent to perform degreasing and charge adjustment treatment on the encapsulated carrier board, with the concentration of the degreasing and charge adjustment agent being 1~10%, the pH value being 10~14, the alkali equivalent being 0.01~0.25 N, and the service life being a copper content of 15~25 mg / L.

3. The surface conductive treatment method for the zero-dimensional material of the encapsulation carrier board according to claim 1, wherein In the step of placing the encapsulated carrier board after conductive deposition treatment under the temperature condition of 80~100°C for drying treatment, the air knife pressure is 300~1000 Pa.

4. The surface conductive treatment method for zero-dimensional materials of the encapsulation carrier board according to claim 1, wherein, In the step of using plasma to remove the redundant conductive layer on the surface of the encapsulated carrier board, the equipment power is 600~1000 W, the vacuum degree is -75~-30 KPa, the temperature is 80~200°C, and the time is 60~120 s.

5. The method for surface conductive treatment of the zero-dimensional material of the encapsulation carrier board according to claim 1, characterized in that In the step of using ultrasonic waves to remove the redundant conductive layer on the surface of the encapsulated carrier board, the equipment power is 300~1000 W, the frequency is 20~60 Hz, the chemical solution concentration is 2~10%, the temperature is 25~45°C, the pH value is 9~15, and the line speed is 2~4 m / min.

6. The surface conductive treatment method for the zero-dimensional material of the encapsulation carrier board according to claim 1, wherein The step of performing five-stage countercurrent DI water washing treatment and drying treatment on the encapsulated carrier board after removing the redundant conductive layer includes: Placing the encapsulated carrier board after removing the redundant conductive layer under the temperature condition of 10~40°C for five-stage countercurrent DI water washing treatment, with the conductivity of the water change frequency being 1~10 S / m and the water flow rate being 5~30 L / min; The encapsulated carrier board is dried under the temperature condition of 80~100°C, and the air knife pressure is 300~1000 Pa.

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