Perovskite precursor solution and method for preparing perovskite layer by using same

Abstract

The invention provides a perovskite precursor solution and a method for preparing a perovskite layer by using the perovskite precursor solution. The perovskite precursor solution comprises a perovskite precursor, an additive and a solvent, wherein the additive has the following structure: # imgabs0 # R1 is selected from C1-4 alkyl groups; and R2 is selected from hydrogen or C1-4 alkyl groups. The additive contained in the perovskite precursor solution can effectively improve the quality of a perovskite film, induce phase crystallization and passivate a trap state, and can be combined with uncoordinated Pb < 2 + > to reduce the trap density and improve the photoelectric property, repeatability and stability of the solar cell.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite precursor solution and a method for preparing a perovskite layer using the same. Background Art

[0002] Perovskite solar cells (PSCs) have attracted widespread attention due to their excellent performance and potential as the next-generation photovoltaic technology. As the core part of perovskite solar cells, the preparation quality of perovskite films directly affects the cell's photoelectric conversion efficiency and stability.

[0003] The ions in perovskite films, especially organic cations, are volatile and easily decomposed in light, heat, and air, resulting in uneven crystallization and non-radiative recombination losses, which in turn lead to low open circuit voltage (VOC) and poor stability. In addition, the polycrystalline nature of perovskite films leads to the presence of numerous grain boundaries inside them, and the lattice discontinuities at these grain boundaries easily produce a large number of defects. These defects include not only point defects, such as vacancies, interstitial ions, and anti-substitution, but also linear grain boundary defects and surface defects, which usually act as non-radiative recombination centers, affecting the photoluminescence quantum efficiency of the film, thereby reducing the photovoltaic performance and stability of solar devices. Summary of the invention

[0004] In view of the technical problems existing in the background technology, the present application provides a perovskite precursor solution, aiming to improve the performance of solar cells.

[0005] In order to achieve the above-mentioned object, the first aspect of the present application provides a perovskite precursor solution, wherein the perovskite precursor solution comprises: a perovskite precursor, an additive and a solvent;

[0006] Wherein, the additive has the following structure:

[0007]

[0008] R1 is selected from C 1～4 alkyl;

[0009] R2 is selected from hydrogen or C 1～4 alkyl.

[0010] The present application at least includes the following beneficial effects: the perovskite precursor solution of the present application contains an additive having the above structure, wherein the dimethylamine ions / polymethylamine ions of the additive have a positive charge -NH3 + It can form coordination bonds with halide vacancies, and the intermediate compound MBX3 (M represents dimethylamine ion / polymethylamine ion, B represents cation, and X represents anion) will stay at the grain boundary, inducing phase crystallization and passivating trap states; R2-C=O and -COO- The introduction of can fill the cation and halogen anion vacancies and react with the uncoordinated Pb 2+ The additives of the present invention can induce phase crystallization and passivate trap states, while simultaneously interacting with uncoordinated Pb 2+ Combined, the trap density is reduced and the photoelectric performance, repeatability and stability of solar cells are improved.

[0011] In some embodiments of the present application, the additive has a structure as shown in one of the following:

[0012] In some embodiments of the present application, the concentration of the additive in the perovskite precursor solution is 0.01 mM to 0.1 mM.

[0013] In some embodiments of the present application, the perovskite precursor includes ABX3, wherein A is one or more of formamidinium ion, methylamine ion, cesium ion, potassium ion, sodium ion, rubidium ion, and methylamine ion; B is one or more of lead ion, tin ion, and germanium ion; X is one or more of iodine ion, bromide ion, chloride ion, and fluoride ion;

[0014] And / or, the concentration of the perovskite precursor in the perovskite precursor solution is 1M to 2M.

[0015] In some embodiments of the present application, the solvent includes one or more of dimethyl sulfoxide, N,N-dimethylformamide and N-methylpyrrolidone.

[0016] In some embodiments of the present application, the solvent includes: dimethyl sulfoxide and N,N-dimethylformamide in a volume ratio of 0.1:10 to 5:10;

[0017] Alternatively, the solvent comprises: dimethyl sulfoxide, N-methylpyrrolidone and N,N-dimethylformamide in a volume ratio of 1:(0.1-1):(8-9).

[0018] The second aspect of the present application provides a method for preparing a perovskite layer, which comprises: applying the perovskite precursor solution described in the first aspect of the present application to one side of the charge transport layer, and obtaining the perovskite layer after annealing.

[0019] In some embodiments of the present application, the thickness of the perovskite layer is 10 nm to 100 μm;

[0020] And / or, the charge transport layer is selected from a hole transport layer or an electron transport layer.

[0021] The third aspect of the present application provides a solar cell, wherein the photovoltaic device includes a perovskite layer, and the perovskite layer is prepared using the perovskite precursor solution described in the first aspect of the present application or the preparation method of the perovskite layer described in the second aspect of the present application.

[0022] The fourth aspect of the present application provides a power generation device, which includes the solar cell described in the third aspect of the present application.

[0023] The fifth aspect of the present application provides an electrical device, which includes the solar cell described in the third aspect of the present application.

[0024] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0026] Figure 1 A schematic diagram of the structure of a solar cell according to an embodiment of the present application is shown.

[0027] Reference numerals:

[0028] 10: solar cell; 100: perovskite layer; 200: hole transport layer; 300: electron transport layer; 400: transparent conductive layer; 500: electrode layer; 600: passivation layer; 700: buffer layer. DETAILED DESCRIPTION

[0029] The following is a detailed description of the embodiments of the technical solution of the present application. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0030] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0031] "Scope" disclosed in the present application is limited in the form of lower limit and upper limit, and a given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of a special range. The scope limited in this way can be including end values, and can be arbitrarily combined, that is, any lower limit can be combined with any upper limit to form a scope. For example, if the scope of 60-120 and 80-110 is listed for a specific parameter, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range values ​​1 and 2 listed, and if the maximum range values ​​3,4 and 5 are listed, the following scope can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In the present application, unless otherwise specified, the numerical range "ab" represents the abbreviation of any real number combination between a and b, wherein a and b are real numbers, and the scope limited in this way can be including end values ​​a and b. For example, the numerical range "0-5" means that all real numbers between "0-5" are listed in this document, and "0-5" is just an abbreviation of these numerical combinations. In addition, when a parameter is expressed as an integer ≥ 2, it is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0032] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0033] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0034] If there is no special explanation, all steps of the present application can be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), which means that step (c) may be added to the method in any order. For example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0035] In a first aspect, the present application provides a perovskite precursor solution, wherein the perovskite precursor solution comprises: a perovskite precursor, an additive and a solvent;

[0036] Wherein, the additive has the following structure:

[0037]

[0038] R1 is selected from C1～4 alkyl;

[0039] R2 is selected from hydrogen or C 1～4 alkyl.

[0040] The perovskite precursor solution of the present application contains an additive having the above structure, wherein the dimethylamine ions / polymethylamine ions of the additive have a positive charge -NH3 + It can form coordination bonds with halide vacancies, and the intermediate compound MBX3 (M represents dimethylamine ion / polymethylamine ion, B represents cation, and X represents anion) will stay at the grain boundary, inducing phase crystallization and passivating trap states; R2-C=O and -COO - The introduction of can fill the cation and halogen anion vacancies and react with the uncoordinated Pb 2+ The combination of the two makes up for the anion vacancies in the perovskite lattice and reduces the trap density, thereby improving the photoelectric performance, repeatability and stability of solar cells.

[0041] In some embodiments of the present application, the additive has a structure as shown in one of the following:

[0042] The above additives can further effectively improve the quality of perovskite films, induce phase crystallization and passivate trap states, and at the same time react with uncoordinated Pb 2+ Combined, the trap density is reduced and the performance of solar cells is synergistically improved. The overall effect is better.

[0043] It should be noted that the above-mentioned additives are all known compounds and can be obtained by purchase, donation or preparation. There is no strict limitation on the preparation method and they can be obtained by conventional technical means in the art.

[0044] In some embodiments of the present application, the concentration of the additive in the perovskite precursor solution is 0.01mM to 0.1mM, for example, 0.01mM, 0.02mM, 0.03mM, 0.04mM, 0.05mM, 0.06mM, 0.07mM, 0.08mM, 0.09mM, 0.1mM, preferably 0.05mM to 0.07mM. Thus, the quality of the perovskite film can be improved, the open circuit voltage, fill factor and photoelectric conversion efficiency of the solar cell can be improved, charge extraction is beneficial, thereby improving the performance of the solar cell, and the lattice deformity caused by excessive concentration can be avoided, resulting in an increase in defect concentration.

[0045] In some embodiments of the present application, the perovskite precursor includes ABX3, wherein A is one or more of formamidinium ion, methylamine ion, cesium ion, potassium ion, sodium ion, rubidium ion, and methylamine ion; B is one or more of lead ion, tin ion, and germanium ion; and X is one or more of iodine ion, bromide ion, chloride ion, and fluoride ion. In some specific embodiments, A is formamidinium ion, methylamine ion, or cesium ion, B is lead ion, and X is bromide ion or iodine ion.

[0046] In some embodiments of the present application, the concentration of the perovskite precursor in the perovskite precursor solution is 1 M to 2 M. In some embodiments, the concentration of the perovskite precursor is 1.2 M to 1.8 M or 1.4 M to 1.6 M. Thus, the obtained perovskite film has better properties such as morphology and crystallinity.

[0047] In some embodiments of the present application, the solvent includes one or more of dimethyl sulfoxide, N,N-dimethylformamide and N-methylpyrrolidone. Thus, the obtained perovskite film has better properties such as morphology and crystallinity.

[0048] In some embodiments of the present application, the solvent includes: dimethyl sulfoxide and N, N-dimethylformamide in a volume ratio of (0.1-5):10. Exemplarily, the volume ratio of dimethyl sulfoxide and N, N-dimethylformamide is (1:-4):10 or (2-3):10. Thus, the obtained perovskite film has better properties such as morphology and crystallinity.

[0049] In some embodiments of the present application, the solvent includes: dimethyl sulfoxide, N-methylpyrrolidone and N,N-dimethylformamide in a volume ratio of 1: (0.1-1): (8-9). Exemplarily, the volume ratio of dimethyl sulfoxide, N-methylpyrrolidone and N,N-dimethylformamide is 1: (0.3-0.7): (8.3-8.7) or 1: (0.4-0.6): (8.4-8.6). As a result, the morphology and crystallinity of the obtained perovskite film are better.

[0050] The second aspect of the present application proposes a method for preparing a perovskite layer, the method comprising: applying the perovskite precursor solution described in the first aspect of the present application to one side of the charge transport layer, and obtaining the perovskite layer after annealing. Thus, the perovskite layer obtained by the method of the present application has the characteristics of uniform crystallization, strong stability, reduced non-radiative recombination loss, wide band gap, etc., which improves the photoelectric performance, repeatability and stability of solar cells.

[0051] In some embodiments of the present application, the method includes: applying the perovskite precursor solution on a side of the charge transport layer facing away from the transparent conductive layer, and obtaining the perovskite layer after annealing.

[0052] In some embodiments of the present application, the thickness of the perovskite layer is 10 nm to 100 μm, for example, 100 nm to 10 μm, 300 nm to 1 μm, 400 nm to 600 nm, thereby further improving the photoelectric performance, repeatability and stability of solar cells.

[0053] In some embodiments of the present application, the charge transport layer is selected from a hole transport layer or an electron transport layer.

[0054] In some embodiments of the present application, the hole transport layer includes: nickel oxide, self-assembled monolayer materials (SAMs), p-type single crystal silicon, p-type polycrystalline silicon, p-type amorphous silicon, 2-(9H-carbazole-9-yl)ethyl]phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid, benzoic acid, 4-[bis(2,4-dimethoxybiphenyl-4-yl)amino]-biphenyl-4-carboxylic acid, [4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 4,4 '-Cyclohexylbis[N,N-bis(4-methylphenyl)aniline, 2,2",7,7"-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, [bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3-hexylthiophene-2,5-diyl), (poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)), Spiro-TTB, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, hexafluoro-2,3,5,6-tetracyano-4-benzothiazoline, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], NiO x , CuSCN, CuAlO2, V2O5, CdS and CdSe.

[0055] In some embodiments of the present application, the electron transport layer includes: fullerene and its derivatives, cyanide-containing polyphenylene vinylene, boron-containing polymers, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, hydroxyquinoline aluminum, oxadiazole compounds, benzimidazole compounds, naphthalenetetracarboxylic acid compounds, perylene derivatives, phosphine oxide compounds, phosphine sulfide compounds, fluorinated phthalocyanine, titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, lithium fluoride, sodium fluoride, magnesium fluoride, calcium fluoride and zinc sulfide. One or more.

[0056] The third aspect of the present application provides a solar cell, see Figure 1The solar cell 10 includes a perovskite layer 100, and the perovskite layer 100 is prepared by using the perovskite precursor solution described in the first aspect or by using the preparation method of the perovskite layer described in the second aspect of the present application. Specifically, the solar cell includes a hole transport layer 200 and an electron transport layer 300, and the perovskite layer 100 is arranged between the hole transport layer 200 and the electron transport layer 300.

[0057] In some embodiments of the present application, the solar cell 10 further includes: a transparent conductive layer 400 and an electrode layer 500, wherein the transparent conductive layer 400 is located on a side of one of the hole transport layer 200 and the electron transport layer 300 that is away from the perovskite layer 100, and the electrode layer 500 is located on a side of the other of the hole transport layer 200 and the electron transport layer 300 that is away from the perovskite layer 100.

[0058] In some embodiments of the present application, the conductive material of the transparent conductive layer 400 includes one or more of zinc gallium oxide, zinc aluminum oxide, indium zinc oxide, fluorine-doped tin oxide, indium tin oxide, barium stannate, titanium-doped tin oxide, and zinc-doped tin oxide. In some embodiments, the transparent conductive layer 400 further includes glass, and the conductive material is located on the side of the glass facing the perovskite layer.

[0059] In some embodiments of the present application, the material of the electrode layer 500 includes one or more of gold, silver, copper and aluminum.

[0060] In some embodiments of the present application, the solar cell 10 further includes: a passivation layer 600 is provided between the electron transport layer 300 and the perovskite layer 100. Thus, non-radiative recombination in the perovskite material can be reduced, ion migration caused by defects can be reduced, and carrier extraction and transmission efficiency can be improved. In some embodiments, the passivation layer may include ethylenediamine.

[0061] In some embodiments of the present application, the solar cell 10 further includes: a buffer layer 700 is provided between the electrode layer 500 and the other of the electron transport layer 300. By providing a buffer layer to improve charge transfer, adjust energy level arrangement, provide physical and chemical stability, reduce interface defects, improve light absorption efficiency and flexibility, and promote the formation of heterostructures, the photoelectric conversion efficiency and stability of the solar cell can be improved.

[0062] The fourth aspect of the present application provides a power generation device, which includes the solar cell described in the third aspect of the present application. Therefore, the power generation device of the present application has excellent photoelectric performance, repeatability and stability.

[0063] In this application, the power generation device refers to a power generation system that uses the photovoltaic effect to directly convert solar radiation energy into electrical energy, which is divided into a stand-alone photovoltaic power generation system (Stand-alone PV System) and a grid-connected photovoltaic power generation system (Grid-connected PV System). The stand-alone photovoltaic power generation system consists of a solar photovoltaic array composed of photovoltaic components, a battery pack, a charge controller, a power electronic converter (inverter), a load, etc. The grid-connected photovoltaic power generation system consists of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter) and a system monitoring part.

[0064] The fifth aspect of the present application provides an electrical device, wherein the electrical device comprises the solar cell according to the third aspect of the present application. Therefore, the electrical device of the present application has excellent photoelectric performance, repeatability and stability.

[0065] In the present application, electrical equipment may include lighting elements, display elements, mobile devices, etc., and specifically may include street lamps, signal indicator lights, insect killer lamps, electric fans, electric toys, electric tools, battery cars, electric cars, ships, spacecraft, etc., wherein electric toys may include fixed or mobile electric toys, such as game consoles, electric car toys, electric ship toys, and electric airplane toys, etc., and spacecraft may include airplanes, rockets, space shuttles, and spacecraft, etc.; photovoltaic power generation systems may include large-scale ground photovoltaic power generation systems, distributed photovoltaic power generation and building integrated photovoltaic power generation systems, etc. Therefore, the electrical equipment has good long-term stability and long service life.

[0066] The scheme of the present invention will be explained below in conjunction with the embodiments. It will be appreciated by those skilled in the art that the following embodiments are only used to illustrate the present invention and should not be considered as limiting the scope of the present invention. Where specific techniques or conditions are not indicated in the embodiments, the techniques or conditions described in the literature in this area or the product specifications are used. The reagents or instruments used are not indicated by the manufacturer and are all conventional products that can be obtained commercially.

[0067] Example 1

[0068] First, select 20 ohm ITO glass and clean it with deionized water, ethanol and detergent before use; then sputter NiOx with a thickness of 20nm. UV is required for 20 minutes before sputtering to remove organic impurities, and then solution-coated [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz): [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid = 3:1 as a hole transport layer with a thickness of 5nm; then mix FAI powder, MAI powder, CsI powder, PbBr2 and PbI2 powder in a certain proportion and dissolve them in a mixed solution of DMF / DMSO (volume ratio DMF:DMSO = 4:1), with a total volume of 1mL and a configuration ratio of FA 0.8 Cs 0.2 Pb(Br 0.2 I 0.8 )3 Perovskite precursor solution, the additive with a final concentration of 0.07mM is added to the precursor solution (N-acetyl-N-methylglycine) assisted crystallization, spin-coated by anti-solvent one-step method, the anti-solvent was anisole, annealed at 100 ° C for 20 min, and a perovskite film with a thickness of 500 nm was obtained; then, EDAI passivator was dynamically spin-coated on the perovskite film by solution method, annealed at 100 ° C for 5 min, and a passivation layer with a thickness of 3 nm was obtained; C was sputtered on the passivation layer 60 As an electron transport layer, the thickness is 30nm, and then BCP is sputtered with a thickness of 6nm; finally, Ag is sputtered with a thickness of 150nm to prepare a solar cell.

[0069] Example 2

[0070] A solar cell was prepared according to the method of Example 1, except that the additive was

[0071] Example 3

[0072] A solar cell was prepared according to the method of Example 1, except that the additive was

[0073] Example 4

[0074] A solar cell was prepared according to the method of Example 1, except that the additive was

[0075] Example 5

[0076] A solar cell was prepared according to the method of Example 1, except that the additive was

[0077] Example 6

[0078] A solar cell was prepared according to the method of Example 1, except that the additive was

[0079] Example 7

[0080] A solar cell was prepared according to the method of Example 1, except that the final concentration of N-acetyl-N-methylglycine was 0.05 mM.

[0081] Example 8

[0082] A solar cell was prepared according to the method of Example 1, except that the final concentration of N-acetyl-N-methylglycine was 0.03 mM.

[0083] Example 9

[0084] A solar cell was prepared according to the method of Example 1, except that the final concentration of N-acetyl-N-methylglycine was 0.09 mM.

[0085] Comparative Example 1

[0086] A solar cell was prepared according to the method of Example 1, except that no additive was added.

[0087] Comparative Example 2

[0088] A solar cell was prepared according to the method of Example 1, except that the additive was Comparative Example 3

[0089] A solar cell was prepared according to the method of Example 1, except that the additive was

[0090] Test Case

[0091] The performance tests were performed on the solar cells prepared in the above-mentioned Examples 1 to 9 and Comparative Examples 1 to 3 respectively.

[0092] The specific test method is: place the prepared battery device under a light source with an intensity P of 100mW / cm 2The AM1.5G standard simulates sunlight. By changing the bias voltage of the load on the battery device, the current value of the battery device is obtained, thereby drawing the current density (J)-voltage (V) curve of the battery device, and thus obtaining the open circuit voltage Voc, short circuit current density Jsc, fill factor FF, and photoelectric conversion efficiency of the battery device, that is, battery efficiency PCE: V and J of the battery device change with the change of external load. When the external load is short-circuited, V=0, and J at this time is called short-circuit current density Jsc; when the external load is disconnected, J=0, and V at this time is called open circuit voltage Voc; the output power of the battery device has a maximum value, which is called the maximum power point Pmax, Pmax divided by the effective light-receiving area of ​​the battery device, that is, the battery efficiency PCE; the fill factor FF of the battery device is PCE×P / (Jsc×Voc).

[0093] Table 1 Performance parameters of different solar cells

[0094]

[0095]

[0096] As shown in Table 1, the performance of the solar cells of Examples 1-9 is significantly better than that of Comparative Examples 1-3, indicating that the additives of the present application can form DMAPbI3 by introducing dimethylammonium ions, and DMAPbI3 stays at the grain boundaries, which can induce phase crystallization and passivate trap states, and assist perovskite crystallization. - Can work together to fill the gap between FA + ,I - The vacant site and the uncoordinated Pb 2+ The combination reduces the trap density. The introduction of dimethylamine ions and glycine into the additive of Example 1 can synergistically optimize the quality of the perovskite film to improve the efficiency of the solar cell, and the overall performance is better.

[0097] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A perovskite precursor solution, characterized in that: include: Perovskite precursors, additives, and solvents; Wherein, the additive has the following structure: R1 is selected from C 1～4 alkyl; R2 is selected from hydrogen or C 1～4 alkyl.

2. The perovskite precursor solution according to claim 1, characterized in that The additive has a structure as shown in one of the following:

3. The perovskite precursor solution according to claim 1, characterized in that The concentration of the additive in the perovskite precursor solution is 0.01 mM to 0.1 mM.

4. The perovskite precursor solution according to claim 1, characterized in that The perovskite precursor includes ABX3, wherein A is one or more of formamidinium ion, methylamine ion, cesium ion, potassium ion, sodium ion, rubidium ion, and methylamine ion; B is one or more of lead ion, tin ion, and germanium ion; X is one or more of iodine ion, bromide ion, chloride ion, and fluoride ion; And / or, the concentration of the perovskite precursor in the perovskite precursor solution is 1M to 2M.

5. The perovskite precursor solution according to claim 1, characterized in that: The solvent includes one or more of dimethyl sulfoxide, N,N-dimethylformamide and N-methylpyrrolidone.

6. The perovskite precursor solution according to claim 5, characterized in that The solvent comprises: dimethyl sulfoxide and N,N-dimethylformamide in a volume ratio of (0.1-5):10; Alternatively, the solvent comprises: dimethyl sulfoxide, N-methylpyrrolidone and N,N-dimethylformamide in a volume ratio of 1:(0.1-1):(8-9).

7. A method for preparing a perovskite layer, characterized in that: include: The perovskite precursor solution according to any one of claims 1 to 6 is applied to one side of the charge transport layer, and the perovskite layer is obtained after annealing.

8. The method according to claim 7, characterized in that The thickness of the perovskite layer is 10 nm to 100 μm; And / or, the charge transport layer is selected from a hole transport layer or an electron transport layer.

9. A solar cell, characterized in that: The invention comprises a perovskite layer, wherein the perovskite layer is prepared by using the perovskite precursor solution according to any one of claims 1 to 6 or by using the preparation method of the perovskite layer according to claim 7 or 8.

10. A power generation device, characterized in that: Comprising the solar cell as claimed in claim 9.

11. An electrical device, characterized in that: Comprising the solar cell as claimed in claim 9.

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