Power converter package, apparatus for power conversion, and method for integrated circuit package

Abstract

The disclosed embodiments may include a power converter package including devices that are vertically stacked. The devices include a first device (110a) and a second device (110b). The first device (110a) comprises a first switched capacitor circuit (410) and provides a first bottom bonding contact (312a) on one surface and a first top bonding contact (314a) on another surface opposite the one surface, and one or more through-vias (316a), the one or more through holes connect the corresponding one or more first bottom engagement contacts and the corresponding one or more first top engagement contacts. The second device (110b) comprises a second switched capacitor circuit and provides a second bottom bonding contact (312b) on one surface for electrical connection to the first top bonding contact (314a) of the first device. The input terminals of the first and switched capacitor circuits are electrically connected to each other, and the output terminals of the first and switched capacitor circuits are electrically connected to each other.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of U.S. Provisional Patent Application No. 63 / 364,569 filed on May 12, 2022, U.S. Provisional Patent Application No. 63 / 364,674 filed on May 13, 2022, and U.S. Provisional Patent Application No. 63 / 366,773 filed on June 21, 2022, the entire contents of which are incorporated herein by reference for all purposes. Technical Field

[0003] The present disclosure relates generally to power electronics and more particularly to power converter packaging. Background Art

[0004] Modern central processing units (CPUs) are evolving to provide higher computing performance, such as artificial intelligence (AI) processing and cloud computing applications, which results in a progressively increasing demand for power from power supplies. As a result, power converters in power supplies may occupy considerable space to meet the growing current requirements of the CPU. Therefore, designing compact and high-density power converters to reduce the required circuit area while meeting the increased current and space requirements has become a challenge in the art.

[0005] In addition, many power converters, such as charge pump converters, include switches and one or more capacitors forming a switching network to achieve power conversion and regulate output voltage or current by switching energy storage elements (e.g., capacitors and / or inductors) between different electrical configurations. However, such operations typically generate a lot of heat and cause thermal hotspots due to the high power devices within the package. Summary of the invention

[0006] An embodiment of the present disclosure provides a power converter package. The power converter package includes devices stacked vertically. The devices include a first device and a second device. The first device includes a first switching capacitor circuit and provides a first bottom bonding contact on one surface and a first top bonding contact on another surface opposite to the one surface, and provides one or more through holes, the one or more through holes connecting the corresponding one or more first bottom bonding contacts and the corresponding one or more first top bonding contacts. The second device includes a second switching capacitor circuit and provides a second bottom bonding contact on one surface for electrically connecting to the first top bonding contact of the first device. The input terminals of the first and switching capacitor circuits are electrically connected to each other, and the output terminals of the first and switching capacitor circuits are electrically connected to each other.

[0007] An embodiment of the present disclosure provides a device for power conversion. The device includes a plurality of switch capacitor circuits respectively arranged in a plurality of integrated circuit packages stacked vertically. The switch capacitor circuits are coupled in parallel to convert a first voltage into a second voltage. At least one package of the plurality of integrated circuit packages includes: a bottom bonding contact on one surface, the bottom bonding contact providing a connection with a substrate or an adjacent lower package stacked below the package; a top bonding contact on another surface opposite to the one surface, the top bonding contact providing a connection with an adjacent upper package stacked above the package; and one or more through holes, the one or more through holes connecting corresponding one or more bottom bonding contacts and corresponding one or more top bonding contacts.

[0008] An embodiment of the present disclosure provides a method for integrated circuit packaging. The method includes: vertically stacking a plurality of switch capacitor circuits in a plurality of sub-packages respectively by: bonding a first bottom bonding contact placed on one surface of a first sub-package to a substrate or an adjacent lower sub-package stacked below the first sub-package, the first sub-package including a first switch capacitor circuit; and bonding a first top bonding contact placed on another surface opposite to one surface of the first sub-package to a second bottom bonding contact placed on one surface of a second sub-package, the second sub-package including a second switch capacitor circuit or a heat spreader layer, and corresponding one or more first bottom bonding contacts and corresponding one or more first top bonding contacts connected by one or more through holes.

[0009] Additional features and advantages of the disclosed embodiments will be partially described in the following description, and in part will become apparent from the description, or can be understood through the practice of the embodiments. The features and advantages of the disclosed embodiments can be realized and obtained through the elements and combinations set forth in the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Embodiments and various aspects of the present disclosure are shown in the following detailed description and accompanying drawings. Note that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the size of various features may be arbitrarily increased or reduced for clarity of discussion.

[0011] Figure 1 is a diagram illustrating an exemplary power converter according to some embodiments of the present disclosure.

[0012] Figure 2 is a diagram illustrating an exemplary switched capacitor circuit according to some embodiments of the present disclosure.

[0013] Figure 3is a diagram illustrating an exemplary power converter package according to some embodiments of the present disclosure.

[0014] Figure 4A is a diagram illustrating an exemplary device according to some embodiments of the present disclosure.

[0015] Figure 4B According to some embodiments of the present disclosure, Figure 4A Side view of the relative spatial arrangement of switches and capacitors in a device.

[0016] Figure 4C According to some embodiments of the present disclosure, Figure 4A Bottom view of the relative spatial arrangement of switches and capacitors in the device.

[0017] Figure 4D According to some embodiments of the present disclosure, Figure 4A A top view of the relative spatial arrangement of switches and capacitors in a device.

[0018] Figure 5 is a diagram illustrating another exemplary device according to some embodiments of the present disclosure.

[0019] Figure 6 is a diagram illustrating another exemplary device including a heat spreader layer according to some embodiments of the present disclosure.

[0020] Figure 7 is a diagram illustrating another exemplary power converter package according to some embodiments of the present disclosure.

[0021] Figure 8 is a diagram illustrating another exemplary power converter package according to some embodiments of the present disclosure.

[0022] Fig. 9 is a diagram illustrating another exemplary power converter according to some embodiments of the present disclosure.

[0023] Fig.10 is a diagram illustrating an exemplary multi-level power converter circuit according to some embodiments of the present disclosure.

[0024] Fig.11 is a diagram illustrating an exemplary device according to some embodiments of the present disclosure.

[0025] Fig.12 is a flow chart of a method for integrated circuit packaging according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0026] The following disclosure provides many different exemplary embodiments or examples for realizing the different features of the provided subject matter. Specific simplified examples of components and arrangements are described below to illustrate the present disclosure. Of course, these are merely examples and are not intended to be limiting. In addition, the present disclosure may repeat reference numerals and / or letters in various examples. This repetition is for simplicity and clarity and does not itself specify the relationship between the various embodiments and / or configurations discussed.

[0027] The terms used in this specification generally have their ordinary meanings in the art and in the specific context in which each term is used. The use of examples in this specification (including examples of any term discussed herein) is merely illustrative and in no way limits the scope and meaning of the disclosure or any exemplified term. Likewise, the disclosure is not limited to the various embodiments given in this specification.

[0028] Although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. For example, without departing from the scope of the embodiment, the first element may be referred to as the second element, and similarly, the second element may be referred to as the first element. As used herein, the term "and / or" includes any and all combinations of one or more items in the associated enumeration items.

[0029] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "below," "above," "above," etc. may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted similarly accordingly.

[0030] In this document, the term “coupled” may also be referred to as “electrically coupled”, and the term “connected” may be referred to as “electrically connected.” “Coupled” and “connected” may also be used to indicate that two or more elements cooperate or interact with each other.

[0031] Various embodiments of the present disclosure will be described with respect to a specific context, namely, implementation in a charge pump circuit. As used in the present disclosure, the term "charge pump" refers to a switched capacitor network configured to convert an input voltage to an output voltage. Examples of such charge pumps include cascade multiplier, Dickson, ladder, series-parallel, Fibonacci, and doubler switched capacitor networks, all of which can be configured as multiphase or single-phase networks.

[0032] However, the concepts in the present disclosure may also be applied to other types of power converters. A power converter that converts a higher input voltage power supply into a lower output voltage level is generally referred to as a buck or decompression converter, because the converter "decompresses" the input voltage. A power converter that converts a lower input voltage power supply into a higher output voltage level is generally referred to as a boost or boost converter, because the converter "boosts" the input voltage. In addition, some power converters (generally referred to as "decompression-boost converters") may be configured to convert an input voltage power supply into an output voltage with a wide range, wherein the output voltage may be higher or lower than the input voltage. In various embodiments, the power converter may be bidirectional, being a boost converter or a buck converter, depending on the way the power supply is connected to the converter. In some embodiments, an AC-DC power converter may be constructed according to a DC-DC power converter by, for example, the following operations: first, the AC input voltage is rectified into a DC voltage, and then the DC voltage is applied to the DC-DC power converter.

[0033] High density integrated switched capacitor power converters may be desirable in applications including but not limited to data centers or portable electronic devices such as tablets, cell phones or handheld computers and IoT (Internet of Things) devices. In various embodiments of the present disclosure, power converter packages and methods of manufacturing high density switched capacitor power converters are disclosed.

[0034] Reference Figure 1 . Figure 1 is a diagram illustrating an exemplary power converter 100 according to some embodiments of the present disclosure. Figure 1 As shown, the power converter 100 may include a plurality of devices 110a, 110b, and 110c coupled to each other. In a preferred embodiment, a power module may include one or more of the devices 110a, 110b, and 110c. For example, each device may provide a power module. As used herein, a power module may refer to a physical unit or device that contains power and electronic components of a power converter circuit. Note that the number of devices 110a, 110b, and 110c may vary in different embodiments, and Figure 1 is a simplified example and is not meant to limit the present disclosure. The device 110a includes a switched capacitor (SC) circuit 112 (also referred to as a charge pump circuit) and a controller circuit 114 configured to control the operation of the switched capacitor circuit 112. Specifically, the controller circuit 114 may include control circuitry, timing circuitry, protection circuitry, gate drivers, and other components that are configured to operate a switch, which in turn may change the electrical configuration of the switched capacitor circuit 112 between a first mode / state or a second mode / state.

[0035] exist Figure 1 In an embodiment, the power converter 100 is configured to receive energy from a voltage source 102 at an input voltage V1 between input terminals V1p and V1n, respectively, and deliver the energy to an output load 104 at an output voltage V2 between output terminals V2p and V2n, respectively. In some embodiments, the input voltage V1 may be higher than the output voltage V2. Devices 110a, 110b, and 110c each include a power conversion circuit (e.g., a switched capacitor circuit 112) configured to convert the input voltage V1 into an output voltage V2. Figure 1 As shown in the embodiment, by using multiple power modules (e.g., including multiple devices 110a, 110b, and 110c) in the power converter 100, wherein the input terminals V1p and V1n of the switch capacitor circuit are connected together and the output terminals V2p and V2n of the switch capacitor circuit are connected together, the power converter 100 can achieve a higher rated power based on low-cost and low-rated devices. Therefore, the modular design also provides flexibility and scalability of the power conversion circuit to meet different requirements for the power supply system in various applications.

[0036] In some embodiments, the devices 110a, 110b, and 110c may include corresponding switched capacitor circuits 112 and separate controller circuits 114, respectively, but the present disclosure is not limited thereto. In some embodiments, the switched capacitor circuits 112 in the devices 110a, 110b, and 110c may be controlled by an external master controller coupled to the devices 110a, 110b, and 110c. In some other embodiments, the power converter 100 may include an internal master controller (e.g., the controller circuit 114 in the device 110a) and one or more slave controllers (e.g., the controller circuits 114 in the devices 110b and 110c) configured to communicate with the internal master controller. In addition, one or more power modules in the power converter 100 may support a power management bus (PMBUS) communication protocol, while the remaining power modules are "light" power modules with a simpler design that do not have a PMBUS and / or telemetry circuit.

[0037] In some embodiments, the controller circuit 114 can be fabricated on a semiconductor substrate such as silicon, gallium nitride (GaN), silicon on insulator (SOI), silicon on sapphire (SOS), silicon on glass (SOG), silicon on quartz (SOQ), and other substrates using semiconductor processing technology compatible with complementary metal oxide semiconductor (CMOS) fabrication. The controller circuit 114 can be physically integrated with the switches in the switch capacitor circuit 112 on the same substrate (e.g., an on-chip configuration) or as an off-chip component configured to operate the switches in the switch capacitor circuit 112.

[0038] like Figure 1 As shown, in some embodiments, the input terminals V1p, V1n and the output terminals V2p, V2n of the switch capacitor circuit 112 in each device 110a, 110b and 110c are coupled. In addition, some input terminals of the controller circuit 114, such as the PG terminal for receiving the "power good" (PG) signal or the CLK terminal for receiving the clock signal, can also be coupled in parallel, so that the devices 110a, 110b and 110c receive the same PG signal and the same clock signal. Some other terminals, such as the I / O pins IO of the devices 110a, 110b and 110c, are connected to the same PG signal and the same clock signal. in and IO out Can be coupled in series to facilitate circuit operation.In this disclosure, the terms "node" and "terminal" may be used interchangeably.

[0039] In various embodiments of the present disclosure, for applications where the horizontal size of the circuit is limited, the devices 110a, 110b, and 110c including the charge pump circuit can be stacked vertically in the package to provide high power density for the power converter 100. For example, a central processing unit (CPU) in a laptop computer or in a data center can provide sufficient height margin (e.g., about 2 mm to 9 mm, or about 7 mm to 22 mm) to allow low profile charge pump power modules to be stacked vertically in the z direction. Therefore, as the total height increases, the area occupied by the charge pump circuit on the horizontal surface (i.e., the xy plane) can be reduced, and the floor space is also saved accordingly.

[0040] Compared to the charge pump power module in the present embodiment, the step-down converter power module typically has a relatively high-profile inductor such as a wound inductor. In particular, the inductor is typically the largest and tallest component in a conventional module and is a bottleneck in reducing the height of the module in the z-direction. Due to the height of the large inductor, conventional step-down converters will not be stacked, and such vertically stacked step-down converter power modules will exceed the height limitation and are therefore undesirable for power supply applications for CPUs in laptop computers or in data centers. On the other hand, utilizing the switched capacitor architecture in the present embodiment, a low-profile (e.g., approximately 1 mm) charge pump power module is suitable for stacking in various power supply applications.

[0041] Figure 2 is a diagram illustrating an exemplary switched capacitor circuit 112 in a device 110a according to some embodiments of the present disclosure. Figure 2 As shown, in some embodiments, the switched capacitor circuit 112 can be a two-phase switched capacitor power converter, which includes switches S1A, S2A, S3A, S1B, S2B and S3B, switches S4, S5, S6 and S7, and capacitors C1A, C2A, C1B and C2B, but the present disclosure is not limited thereto. It should be understood that the switched capacitor circuit 112 can be single-phase or multi-phase and is designed based on the desired conversion ratio.

[0042] exist Figure 2 In the example shown, the switch capacitor circuit 112 can be configured to receive energy from an input voltage source at a high input voltage V1 via input terminals V1p, V1n, and deliver the energy to an output load at a low output voltage V2 via output terminals V2p, V2n. The controller circuit 114 operates in response to one or more I / O signals (which may be digital communication signals) to control the switch capacitor circuit 112. The controller circuit 114 coupled to the switch capacitor circuit 112 is configured to control switches S1A to S3A, S1B to S3B, and S4 to S7 to be turned on or off accordingly to achieve power conversion. In some embodiments, a conversion ratio of 3:1 can be obtained. Switches S1A, S2A, and S3A can be referred to as "stacked" switches for one phase, and switches S1B, S2B, and S3B can be referred to as "stacked" switches for another phase. Switches S4, S5, S6, and S7 can be referred to as "phase" switches, which are shared by two phases in this embodiment. In some other examples, different transformation ratios (e.g., a 2:1 transformation ratio or a 4:1 transformation ratio) may be obtained by using different numbers of capacitors and different numbers of switches. As the size of the desired transformation ratio increases, the number of capacitors and switches used in the power converter may increase.

[0043] During operation, switches S1B, S2A, S3B, S5 and S6 (in Figure 2 and switches S1A, S2B, S3A, S4, and S7 (in Figure 2 In the embodiment of the present invention, the first switching state and the second switching state are marked as group 2) can be in a complementary state. For example, in a first switching state, in response to a command from the controller circuit 114, switches S1B, S2A, S3B, S5 and S6 can be disconnected, and switches S1A, S2B, S3A, S4 and S7 can be closed. In a second switching state after the first switching state, in response to a command from the controller circuit 114, switches S1B, S2A, S3B, S5 and S6 can be closed, and switches S1A, S2B, S3A, S4 and S7 can be disconnected. In addition, there can be a dead time interval between the first switching state and the second switching state. During the dead time interval, all switches are disconnected, which ensures a clean transition between the two switching states. It will be understood that the present disclosure is not limited to such ratios or types of conversion circuits. In various embodiments, the buck or boost configuration can be applied to all possible charge pump ratios.

[0044] Figure 3 is a diagram illustrating an exemplary power converter package 300 according to some embodiments of the present disclosure. Power converter package 300 includes multiple integrated circuit packages (e.g., devices 110a, 110b, and 110c) stacked vertically to increase power density without increasing the overall package area. As used herein, a "bottom" layer is the layer closest to the substrate that provides the electrical interface, and a "top" layer is the layer farthest from the substrate. Figure 3 As shown, the device 110a at the bottom layer can be a bottom package, which provides a bottom bonding contact 312a on one surface (e.g., bottom surface) and a top bonding contact 314a on another surface (e.g., top surface) opposite to the surface having the bottom bonding contact 312a. One or more through holes 316a of the device 110a connect the corresponding bottom bonding contact 312a and the corresponding top bonding contact 314a.

[0045] Similarly, the device 110b at the middle layer can be a middle package that provides a bottom bonding contact 312b on the bottom surface and a top bonding contact 314b on the top surface opposite the bottom surface, wherein one or more through holes 316b connect the corresponding bottom bonding contact 312b and the corresponding top bonding contact 314b. The device 110c at the top layer can be a top package that provides a bottom bonding contact 312c on the bottom surface. In other words, at Figure 3In an embodiment, a bottom bonding contact on one surface of the package provides a connection to a substrate or an adjacent lower package stacked below the package, while a top bonding contact on the opposite surface provides a connection to an adjacent upper package stacked above the package.

[0046] Note that in some embodiments, the top package may be a stackable package or a non-stackable package. In other words, while the device 110c at the top layer may provide a top bonding contact on the top surface, in some other embodiments, the device 110c may only provide a bottom bonding contact 312c. It is also noted that in various embodiments, the orientation of the non-stackable package and the stackable package may vary in the power converter package 300 depending on the application.

[0047] like Figure 3 As shown, device 110a, 110b and 110c are stacked on each other by joint pieces 320a, 320b and 320c, and this joint piece 320a, 320b and 320c can be electrical joint piece (for example, bump), thermocompression joint piece or the hybrid joint piece between two adjacent packages.In some embodiments, joint pieces 320a, 320b and 320c can include the conductive bump of both conducting heat signal and electrical signal and the heat conductive bump that is only dedicated to heat transfer.In particular, joint piece 320a is configured to be joined to the bottom joint contact portion 312a in the bottom layer to substrate such as main printed circuit board (PCB) 310.Joint pieces 320b and 320c are configured to be joined to the top joint contact portion on the top surface of the package placed in one layer to the corresponding bottom joint contact portion on the bottom surface of another package placed in the adjacent layer. The bonding members 320a, 320b and 320c and the through holes 316a and 316b provide electrical connections between the stacked devices 110a, 110b and 110c. Figure 3 The stacked devices 110a, 110b and 110c may form Figure 1 A power converter 100 is provided in which switched capacitor circuits in different modules are electrically connected in parallel to each other.

[0048] As described above, one or more controller circuits configured to control the operation of the switched capacitor circuit may be disposed in devices 110a, 110b, and 110c. In some embodiments, the master controller circuit may be disposed in the bottom package (e.g., device 110a), and the slave controller circuit may be disposed in one or more intermediate packages (e.g., device 110b) or in the top package (e.g., device 110c). The slave controller circuit may be electrically connected to the master controller circuit disposed in the bottom package through the corresponding bottom bonding contacts 312a to 312c and the top bonding contacts 314a and 314b of the integrated circuit package.

[0049] Figure 4A is a diagram illustrating an exemplary device 400 according to some embodiments of the present disclosure. Figure 4A The device 400 shown can be used to implement Figure 3 Any one of the devices 110a, 110b and 110c in the power converter package 300. Figure 4A As shown, device 400 is wafer-level stacked and includes a first active device layer 410, a passive device layer 420 stacked above the first active device layer 410, and a second active device layer 430 stacked above the passive device layer 420. One or more through-holes 440 and 450 are formed and extend through the first active device layer 410, the passive device layer 420, and the second active device layer 430 in height.

[0050] In some embodiments, the first active device layer 410 includes a first switch (e.g., a phase switch) of the switched capacitor circuit, and the second active device layer 430 includes a second switch (e.g., a stacked switch) of the switched capacitor circuit. The passive device layer 420 between the two active device layers 410 and 430 includes a charge pump capacitor of the switched capacitor circuit. For example, the passive device layer 420 can be a glass wafer / panel including the charge pump capacitor. The device 400 provides bottom bonding contacts 462 and 464 on the bottom surface and top bonding contacts 472 and 474 on the top surface opposite the bottom surface for electrical connection to other devices stacked above or below the device 400. Figure 4A As shown, vias 440 and 450 may be configured to connect respective bottom bonding contacts 462 and 464 and top bonding contacts 472 and 474 .

[0051] Reference FIG. 4B to FIG. 4D In order to better understand the content of this disclosure. Figure 4B , Figure 4C and Figure 4D According to some embodiments of the present disclosure, Figure 4A A side view 400b, a bottom view 400c, and a top view 400d of the relative spatial arrangement of switches and capacitors in the device 400 are shown. FIG. 4B to FIG. 4D In the embodiment of the invention, the stacked switches 432A to 436A and 432B to 436B, the phase switches 412, 414, 416 and 418, and the capacitors 422, 424, 426 and 428 of the switched capacitor circuit can be formed in a layer in the device 400. Since the region from which the cross section has been selected, Figure 4B The stack switches 432B to 436B and the phase switches 416 and 418 are not shown.

[0052] like Figure 4BAs shown, capacitors 422, 424, 426, and 428 may be arranged coplanar with one another and between stack switches 432A to 436A and 432B to 436B and phase switches 412, 414, 416, and 418. Figure 4B and Figure 4C As shown, capacitors 422, 424, 426, and 428 may be formed on a passive device layer (eg, Figure 4A The passive device layer 420 of FIG. 1 , and the phase switches 412 , 414 , 416 , and 418 may be formed in a first switch layer (eg, Figure 4A In the first active device layer 410). Figure 4B and Figure 4D As shown, the stacked switches 432A to 436A and 432B to 436B may be formed on a second switch layer (eg, Figure 4A In the second active device layer 430).

[0053] Figure 5 is a diagram illustrating another exemplary device 500 according to some embodiments of the present disclosure. The device 500 includes a substrate 510 supporting capacitors C1A, C2A, C1B, and C2B and one or more dies 520 (e.g., a silicon die), which together form a switched capacitor circuit. An encapsulation material 540 may be deposited over the capacitors C1A, C2A, C1B, and C2B and the one or more dies 520 to at least partially encapsulate the switched capacitor circuit. A through hole 570 extends through the encapsulation material 540 and is positioned corresponding to the top bonding contact 560. For example, a compression molding process may be used to encapsulate the one or more dies 520 and other components using a thermally conductive molding compound.

[0054] Substrate 510 may be a FR-4 PCB or a patterned lead frame electrically coupled to bumps 550 for transmitting power and signals. In various embodiments, bumps 550 may be solder bumps, copper pillars, copper pillar bumps, gold pillar bumps, etc., that provide electrical communication between device 500 and any external components. In some embodiments, the patterned lead frame is applied with a solder resist coating to avoid excessive collapse during the soldering process. The solder resist layer may be applied over the leads and formed with openings corresponding to the conductive bumps 550, respectively. Since the area from which the cross section has been selected, Figure 5 Some capacitors in device 500 (eg, capacitors C1B and C2B) may not be shown.

[0055] like Figure 5As shown, capacitors C1A, C2A, C1B, and C2B and one or more dies 520 can be mounted on substrate 510. Conductive bumps 522 are configured to provide electrical communication between die 520 and capacitors C1A, C2A, C1B, and C2B. One or more heat spreaders 530 can be disposed above one or more dies 520 to facilitate heat transfer and dissipate heat generated in one or more dies 520 during operation. In some embodiments, one or more dies 520 may include a stacked switch (e.g., Figure 2 The stacked die of switches S1A, S1B, S2A, S2B, S3A and S3B) and the stacked die including phase switches (e.g., Figure 2 In some other embodiments, the stacked switch and the phase switch can be integrated in the same die. It should be understood that the die 520 can be arranged differently in various embodiments. For example, for a device 500 including multiple die 520, the die 520 can be arranged side by side, with their respective devices facing the substrate 510, or arranged so that one die is stacked on top of another die.

[0056] Refer again Figure 3 For a power converter package 300 including multiple switched capacitor layers stacked vertically, the stacked die and associated passive components typically generate a lot of heat and cause thermal hotspots due to the high power devices within the package. To facilitate heat dissipation, the power converter package 300 may also include one or more heat spreader layers within a single switched capacitor layer or between two adjacent switched capacitor layers.

[0057] Figure 6 is a diagram showing another exemplary device 600 including a heat spreader layer according to some embodiments of the present disclosure. The device 600 can also be used to implement Figure 3 Any one of the devices 110a, 110b and 110c in the power converter package 300 in FIG. Figure 4A Similar to the device 400 , wafer level stacking technology is applied to the device 600 .

[0058] In addition to the vertically stacked first active device layer 410, passive device layer 420, and second active device layer 430, device 600 also includes one or more heat spreader layers 610 and 620. Heat spreader layer 610 is arranged on the bottom side of device 600, below first active device layer 410. Heat spreader layer 620 is arranged on the top side of device 600, above second active device layer 430. Heat spreader layers 610 and 620 respectively include thermally conductive insulating materials (e.g., SiC, AlN, diamond, etc.) for heat dissipation. Therefore, heat spreader layers 610 and 620 help transfer accumulated heat out of the stacked layers and avoid damage or performance degradation caused by heat accumulation in active device layers 410 and 430 or passive device layer 420.

[0059] Figure 7 is a diagram illustrating another exemplary power converter package 700 according to some embodiments of the present disclosure. Figure 3 Compared to the power converter package 300 , the power converter package 700 further includes a heat spreader layer 710 vertically disposed between two adjacent devices (eg, devices 110 a and 110 b ).

[0060] like Figure 7 As shown, the heat spreader layer 710 can have a form factor similar to the switched capacitor layer in the power converter package 700, such as devices 110a, 110b, and 110c. The heat spreader layer 710 also includes a bonding contact 712 on one surface (e.g., the bottom surface) and a bonding contact 714 on the opposite surface (e.g., the top surface). The bonding contact 712 communicates with one of the two adjacent devices (e.g., device 110a below the heat spreader layer 710) through a bonding member 720, and the bonding contact 714 communicates with the other of the two adjacent devices (e.g., device 110b above the heat spreader layer 710) through a bonding member 320b. One or more through holes 716 of the heat spreader layer 710 connect a corresponding bonding contact 712 and a corresponding bonding contact 714. Figure 6 Similar to the embodiment of FIG. 7 , the heat spreader layer 710 may also include a thermally conductive insulating material (eg, SiC, AlN, diamond, etc.) for heat dissipation. Note that other heat sink structures may also be used to implement Figure 6 and Figure 7 The heat spreader layers 610, 620 and 710 are shown. The embodiments disclosed herein are examples and are not meant to limit the present disclosure. For example, Figure 6 The semiconductor device 600 in FIG. 6 may also be connected to a heat sink to transfer heat from the semiconductor device 600 .

[0061] Figure 8is a diagram illustrating another exemplary power converter package 800 according to some embodiments of the present disclosure. Figure 8 In an embodiment, the power converter package 800 also includes a heat sink 810 configured to take away heat from the devices 110a to 110c. The heat sink 810 may be a copper block or an aluminum block, but the present disclosure is not limited thereto. In some embodiments, the heat sink 810 may include one or more heat sink fins 812 extending from the base of the heat sink 810 to increase the heat transfer area and further promote heat dissipation by thermal convection. For example, the heat sink fins may be elongated, substantially flat members arranged substantially parallel to each other. Therefore, heat can be conducted from the devices 110a to 110c to the heat sink 810 and the heat sink fins 812, which transfer heat to the ambient air by convection. In some embodiments, a heat sink fan can be used to generate airflow to further enhance the cooling effect of the heat sink 810.

[0062] like Figure 8 As shown, thermal interface material 820 is placed between the top device (e.g., device 110c) of the stacked devices 110a, 110b, and 110c and the heat sink 810. In particular, device 110c provides a bottom bonding contact 112c on a bottom surface, and thermal interface material 820 contacts a top surface opposite the bottom surface to facilitate heat transfer from device 110c to heat sink 810. Similarly, thermal interface materials 830 and 840 are placed between heat spreader layer 710 and heat sink 810 to facilitate heat transfer. For example, heat spreader layer 710 may include a vapor chamber, wherein thermal interface materials 830 and 840 are placed between vapor chamber walls of the vapor chamber and heat sink 810. In some other embodiments, a microfluidic heat sink or other cooling system may also be used in power converter package 800. Therefore, Figure 8 The arrangement of the heat spreader layer 710 and the heat sink 810 in FIG. 8 is merely an example and is not meant to limit the present disclosure.

[0063] In some embodiments, it is also possible to apply Figures 3 to 8 The power converter packages 300, 700, 800 and devices 400, 500, 600 disclosed in the present invention implement a multi-level power converter such as a three-level step-down power converter or any other hybrid converter with a small profile component, but the present disclosure is not limited thereto. In particular, a hybrid converter such as a multi-level power converter or a series capacitor step-down converter also includes a switched capacitor circuit combined with different topologies.

[0064] Fig. 9 is a diagram illustrating another exemplary power converter 900 according to some embodiments of the present disclosure. Figure 1Similar to the embodiment of the present invention, the power converter 900 also includes devices 110a, 110b and 110c coupled to each other, and each device provides a power module. In this embodiment, the device 110a includes a multi-level power converter circuit 912 and a controller circuit 914 configured to control the operation of the multi-level power converter circuit 912. Figure 1 Similar to the power converter 100 of FIG. 1 , by using multiple power modules arranged in parallel in the power converter 900 , the power converter 900 can achieve a higher power rating based on low-cost and low-rated devices. The controller circuit 914 may include Figure 1 The same or similar circuit system as the controller circuit 114 has been discussed in detail above, so for the sake of brevity, it will not be repeated in this article.

[0065] Fig.10 Some embodiments according to the present disclosure are shown in Fig. 9 FIG. 1 is a diagram of an exemplary multi-level power converter circuit 912 in a device 110a of FIG. As an example, the multi-level power converter circuit 912 can be a single-phase 4-level flying capacitor converter, but the present disclosure is not limited thereto. It should be understood that different power converter topologies can be used for the multi-level power converter circuit 912.

[0066] exist Fig.10 In the example of , the multi-level power converter circuit 912 includes power switches M1, M2, M3, M4, M5 and M6 arranged in series connection; flying capacitors C1 and C2; inductor L, which can be a low-profile chip inductor with compact size; and output capacitor C3. In particular, each phase branch in the 4-level converter includes 3 units connected in series, wherein each unit includes a complementary switch pair (e.g., switches M1 and M6, switches M2 and M5, and switches M3 and M4) and an associated flying capacitor (e.g., C1 and C2). During circuit operation, one switch is turned on in each unit at a given time. Therefore, the multi-level power converter circuit 912 operates in one of eight different states. Depending on the state, the voltage at the node Lx can be at 4 different levels.

[0067] The pulse voltage at the node Lx is filtered by the LC filter formed by the inductor L and the output capacitor C3. Therefore, an output voltage Vout can be generated, which is the average value of the voltage at the node Lx. The multi-level power converter circuit 912 is configured to alternate between the combination of states according to the desired output voltage Vout. During operation, the flying capacitors C1 and C2 charge as much as they discharge to maintain a constant average voltage across the flying capacitors C1 and C2. Therefore, the multi-level power conversion circuit 912 uses power switches M1 to M6, flying capacitors C1 and C2, inductor L and output capacitor C3 to convert the input voltage Vin into output power Vout.

[0068] Fig.11 is a diagram illustrating an exemplary device 1100 according to some embodiments of the present disclosure. Fig.11 The device 1100 shown can be used to implement Fig. 9 Any one of the devices 110a, 110b and 110c in the power converter package 900. Figure 4A Similar to the embodiment of the present invention, the device 1100 is wafer-level stacked and includes a first active device layer 1110, a passive device layer 1120 stacked above the first active device layer 1110, and a second active device layer 1130 stacked above the passive device layer 1120. One or more through-holes 1140, 1150, and 1160 are formed and extend in height through the first active device layer 1110, the passive device layer 1120, and the second active device layer 1130. In other words, the two active device layers 1110 and 1130 are formed on opposite sides of the passive device layer 1120.

[0069] Specifically, the active device layer 1130 may include switches M1, M2, and M3, and the active device layer 1110 may include switches M4, M5, and M6. The passive device layer 1120 may include flying capacitors C1 and C2. For example, the passive device layer 1120 may be a glass wafer / panel including flying capacitors C1 and C2. In some embodiments, the inductor L may also be formed in an inductor layer (not shown) within the device 1100 to achieve Fig.10 The device 1100 provides bottom bonding contacts 1172, 1174 and 1176 on the bottom surface and top bonding contacts 1182, 1184 and 1186 on the top surface opposite to the bottom surface for electrical connection to other devices stacked above or below the device 1100. Fig.11 As shown, vias 1140, 1150, and 1160 may be configured to connect corresponding bottom bonding contacts 1172, 1174, and 1176 and top bonding contacts 1182, 1184, and 1186. Fig.11The stacked, multi-layer structure shown may enable the fabrication of a higher density of capacitors and switches, resulting in a more compact and higher power density multi-level power converter.

[0070] Fig.12 is a flow chart of a method 1200 for integrated circuit packaging according to some embodiments of the present disclosure. It should be understood that in Fig.12 Additional operations may be performed before, during, and / or after the method 1200 depicted in the drawings, and some other processes may only be briefly described herein. The method 1200 may be performed to manufacture an integrated circuit for power converter applications that uses vertically stacked devices, modules, or packages to increase power density, such as Figure 1 The power converter 100 and Fig. 9 The power converter 900 of FIG. 1200 includes operations 1210 , 1220 , and 1230 .

[0071] In operation 1210, sub-packages each including a corresponding switched capacitor circuit are formed. The sub-packages including the switched capacitor circuits may be implemented in various ways. For example, in Figure 4A In the device 400 shown, a sub-package may be formed by forming a first active device layer including a first switch, forming a passive device layer including a capacitor above the first active device layer, and forming a second active device layer including a second switch above the passive device layer. Figure 5 In the device 500 shown, the sub-package can be formed by mounting one or more capacitors of the corresponding switched capacitor circuit on a substrate or lead frame, mounting one or more dies on the substrate or lead frame, and depositing packaging material over the one or more dies and the one or more capacitors. The one or more dies include switches of the corresponding switched capacitor circuit, and the vias pass through the packaging material.

[0072] In operation 1220, the switched capacitor circuits in the sub-packages are stacked vertically. For example, a first bottom bonding contact placed on one surface of a first sub-package is bonded to a substrate or an adjacent lower sub-package stacked below the first sub-package, and a first top bonding contact placed on another surface of the first sub-package opposite to one surface is bonded to a second bottom bonding contact placed on one surface of a second sub-package. The corresponding one or more first bottom bonding contacts and the corresponding one or more first top bonding contacts are connected by one or more through holes.

[0073] In some embodiments, for example, Figure 3 In the power converter package 300, the first sub-package includes a first switched capacitor circuit, and the second sub-package includes a second switched capacitor circuit. In some other embodiments, for example, Figure 7 In the power converter package 700 of the present invention, the second sub-package may include a heat spreader layer. For the second sub-package including the heat spreader layer, a second top bonding contact placed on another surface of the second sub-package opposite to the one surface is bonded to a third bottom bonding contact on one surface of the third sub-package including the second switched capacitor circuit.

[0074] In operation 1230, the heat sink is positioned and the thermal interface material is placed accordingly. Figure 8 In accordance with the discussion associated with the power converter package 800 of FIG. 1 , the thermal interface material can be placed between the top sub-package of the sub-package and the heat sink. Additionally, in some embodiments, the thermal interface material is also placed between one or more heat spreader layers of the sub-package and the heat sink to facilitate heat transfer. For example, the second sub-package can include a vapor chamber as a heat spreader layer, and the thermal interface material can be placed between the vapor chamber wall of the vapor chamber and the heat sink.

[0075] Through the operations 1210, 1220, and 1230 discussed above, a power converter package (eg, Figure 3 A power converter package 300 of FIG. 1 or a power converter package having a stacked switched capacitor circuit and one or more heat spreader layers (eg, Figure 7 Power converter package 700 or Figure 8 The power converter package 800 of FIG. 1200 is a power converter package of FIG. 1200 . As previously described, the final package includes vertically stacked modules with improved power density, thermal management characteristics, and simplified electrical connections. Therefore, the method 1200 is suitable for various power conversion applications, such as a power converter IC with a stacked charge pump circuit or a multi-level power converter.

[0076] In summary, by using devices having bonding contacts arranged on both the top surface and the bottom surface, the devices can be stacked on each other to form a power converter package having multiple power modules connected in parallel. Therefore, the stacked circuit provides a larger output current and a higher power density without increasing the total package area. The embodiments of the present disclosure are suitable for various devices or systems, such as power converters used in modern data centers, but the present disclosure is not limited thereto. The disclosed embodiments can also be used in other power applications or scenarios where the package height is not critical. The electrical signals and / or heat generated in the die can be transferred via corresponding bonding contacts and through holes. Therefore, the obtained power converter package can achieve several desired performance characteristics, including high thermal conductivity. In addition, the power modules connected in parallel also provide greater flexibility for circuit design of various power ratings and different applications.

[0077] In the foregoing description, embodiments have been described with reference to many specific details that may vary with implementation. Certain adaptive changes and modifications may be made to the described embodiments. In view of the practice of the disclosure disclosed herein and the disclosure of this specification, other embodiments may be apparent to those skilled in the art. It is also expected that the sequence of steps shown in the figure is for illustrative purposes only and is not intended to be limited to any particular sequence of steps. Therefore, it will be appreciated by those skilled in the art that these steps may be performed in different orders when implementing the same method.

[0078] It should be understood that, for the sake of clarity, certain features of this specification described in the context of separate embodiments may also be provided in combination in a single embodiment. Conversely, for the sake of brevity, various features of this specification described in the context of a single embodiment may also be provided individually or in any suitable sub-combination or appropriately in any other described embodiment of this specification. Certain features described in the context of various embodiments are not considered essential features of these embodiments, unless the embodiment is inoperable without these elements.

[0079] The following terms may be used to further describe the embodiments:

[0080] 1. A power converter package, comprising:

[0081] A plurality of vertically stacked devices, the device comprising:

[0082] a first device comprising a first switched capacitor circuit and:

[0083] providing a first bottom bonding contact on one surface and a first top bonding contact on another surface opposite to the one surface; and

[0084] providing one or more through-holes connecting the corresponding one or more first bottom bonding contacts and the corresponding one or more first top bonding contacts; and

[0085] a second device comprising a second switched capacitor circuit and providing a second bottom bonding contact on one surface for electrical connection to the first top bonding contact of the first device,

[0086] wherein the first and input terminals of the switched capacitor circuit are electrically connected to each other, and

[0087] Output terminals of the first and switched capacitor circuits are electrically connected to each other.

[0088] 2. The power converter package of clause 1, wherein the first device further comprises:

[0089] a first active device layer including a plurality of first switches in the first switched capacitor circuit;

[0090] a passive device layer above the first active device layer, the passive device layer including a plurality of capacitors in the first switched capacitor circuit; and

[0091] A second active device layer is above the passive device layer, the second active device layer including a second plurality of switches in the first switched capacitor circuit.

[0092] 3. The power converter package of clause 2, wherein the first switch is a phase switch and the second switch is a stack switch.

[0093] 4. A power converter package according to clause 2 or 3, wherein the passive device layer comprises a glass wafer.

[0094] 5. A power converter package according to any one of clauses 2 to 4, wherein the first device further comprises:

[0095] One or more heat spreader layers on a top side or a bottom side of the first device, the one or more heat spreader layers comprising a thermally conductive insulating material.

[0096] 6. The power converter package of clause 1, wherein the first device further comprises:

[0097] Substrate or lead frame;

[0098] one or more capacitors in the first switched capacitor circuit mounted on the substrate or lead frame;

[0099] one or more dies mounted on the substrate or leadframe, the one or more dies comprising a plurality of switches in the first switched capacitor circuit; and

[0100] An encapsulation material is deposited over the one or more dies and the one or more capacitors, wherein the one or more vias pass through the encapsulation material.

[0101] 7. The power converter package of clause 6, wherein the first device further comprises a heat spreader over the one or more dies.

[0102] 8. A power converter package according to any one of clauses 1 to 7, further comprising:

[0103] One or more heat spreader layers vertically disposed between two adjacent devices in the plurality of devices, any one of the one or more heat spreader layers comprising:

[0104] a first bonding contact on one surface for communicating with one of the two adjacent devices; and

[0105] A second bonding contact on another surface opposite to the one surface is provided for communicating with the other of the two adjacent devices.

[0106] 9. The power converter package of clause 8, wherein the one or more heat spreader layers include a vapor chamber, a thermal interface material being positioned between vapor chamber walls of the vapor chamber and a heat sink.

[0107] 10. A power converter package according to any of clauses 1 to 9, wherein the plurality of devices are stacked on top of each other by electrical bonding, thermocompression bonding or hybrid bonding.

[0108] 11. A power converter package according to any one of clauses 1 to 10, wherein a thermal interface material is placed between a top device among the plurality of devices and a heat sink, the top device providing a bottom bonding contact on one surface, the thermal interface material being in contact with another surface of the top device opposite to the one surface.

[0109] 12. A power converter package as claimed in any of clauses 1 to 11, wherein the first device further comprises a controller for controlling operation of the first switched capacitor circuit.

[0110] 13. A power converter package according to any of clauses 1 to 12, wherein the first device further comprises an inductor for a multi-level power converter.

[0111] 14. A device for power conversion, comprising:

[0112] A plurality of switched capacitor circuits respectively arranged in a plurality of integrated circuit packages stacked vertically, the switched capacitor circuits being coupled in parallel to convert a first voltage into a second voltage, wherein at least one package of the plurality of integrated circuit packages comprises:

[0113] a bottom bonding contact on one surface providing connection to a substrate or an adjacent underlying package stacked below the package;

[0114] a top bonding contact on another surface opposite the one surface, the top bonding contact providing connection to an adjacent upper package stacked above the package; and

[0115] One or more through-holes connect the corresponding one or more bottom bonding contacts and the corresponding one or more top bonding contacts.

[0116] 15. The apparatus according to clause 14, wherein:

[0117] The plurality of integrated circuit packages includes a top package including a bottom bonding contact on one surface providing a connection to an adjacent underlying package stacked below the top package; and

[0118] A thermal interface material is placed between another surface of the top package opposite to the one surface and a heat sink.

[0119] 16. The apparatus according to clause 14 or clause 15, further comprising:

[0120] One or more controller circuits for controlling operation of the plurality of switched capacitor circuits, the one or more controller circuits being disposed in one or more of the plurality of integrated circuit packages.

[0121] 17. The apparatus of clause 16, wherein the one or more controller circuits comprise:

[0122] a main controller circuit disposed in a bottom package of the plurality of integrated circuit packages; and

[0123] One or more slave controller circuits are arranged in one or more packages stacked above the bottom package and are electrically connected to the master controller circuit through corresponding bottom bonding contacts and top bonding contacts of the plurality of integrated circuit packages.

[0124] 18. The apparatus of any of clauses 14 to 17, wherein the plurality of switched capacitor circuits are controlled by an external controller coupled to the plurality of switched capacitor circuits.

[0125] 19. The apparatus according to any one of clauses 14 to 18, further comprising:

[0126] One or more heat spreader layers are respectively vertically disposed between two adjacent integrated circuit packages, and a thermal interface material is placed between the one or more heat spreader layers and the heat sink.

[0127] 20. The apparatus according to any one of clauses 14 to 19, further comprising:

[0128] A heat sink is configured to carry heat away from the plurality of integrated circuit packages, wherein a thermal interface material is placed between a top package of the plurality of integrated circuit packages and the heat sink.

[0129] 21. A method for integrated circuit packaging, comprising:

[0130] Multiple switched capacitor circuits are vertically stacked in multiple sub-packages by:

[0131] bonding a first bottom bonding contact disposed on one surface of a first sub-package to a substrate or an adjacent underlying sub-package stacked below the first sub-package, the first sub-package including a first switched capacitor circuit; and

[0132] A first top bonding contact placed on another surface of the first sub-package opposite to the one surface is bonded to a second bottom bonding contact placed on one surface of a second sub-package, the second sub-package including a second switching capacitor circuit or a heat spreader layer, and corresponding one or more first bottom bonding contacts and corresponding one or more first top bonding contacts are connected via one or more through holes.

[0133] 22. The method of clause 21, wherein the second subpackage includes the heat spreader layer, the method further comprising:

[0134] A second top bonding contact disposed on another surface of the second sub-package opposite to the one surface is bonded to a third bottom bonding contact on one surface of a third sub-package including the second switched capacitor circuit.

[0135] 23. The method of clause 21 or 22, wherein the second subpackage comprises a vapor chamber as the heat spreader layer, the method further comprising:

[0136] A heat sink is positioned and a thermal interface material is placed between a vapor chamber wall of the vapor chamber and the heat sink.

[0137] 24. The method according to any one of clauses 21 to 23, further comprising:

[0138] A heat spreader is positioned and a thermal interface material is placed between a top sub-package of the plurality of sub-packages and the heat spreader.

[0139] 25. A method according to any of clauses 21 to 24, wherein one of the plurality of sub-packages is formed by:

[0140] forming a first active device layer including a plurality of first switches;

[0141] forming a passive device layer including a plurality of capacitors over the first active device layer; and

[0142] A second active device layer including a plurality of second switches is formed over the passive device layer.

[0143] 26. A method according to any of clauses 21 to 25, wherein one of the plurality of sub-packages is formed by:

[0144] mounting one or more capacitors in a corresponding switched capacitor circuit on a substrate or lead frame;

[0145] mounting one or more dies on the substrate or leadframe, the one or more dies comprising a plurality of switches in the corresponding switched capacitor circuit; and

[0146] An encapsulation material is deposited over the one or more dies and the one or more capacitors.

[0147] The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art will appreciate that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for performing the same purpose and / or achieving the same advantages of the embodiments described herein. Those skilled in the art will also appreciate that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions, and modifications may be made herein without departing from the spirit and scope of the present disclosure.

Claims

1. A power converter package, comprising: A plurality of vertically stacked devices, the device comprising: a first device comprising a first switched capacitor circuit and: providing a first bottom bonding contact on one surface and a first top bonding contact on another surface opposite to the one surface; and providing one or more through-holes connecting the corresponding one or more first bottom bonding contacts and the corresponding one or more first top bonding contacts; and a second device comprising a second switched capacitor circuit and providing a second bottom bonding contact on one surface for electrical connection to the first top bonding contact of the first device, wherein the first and input terminals of the switched capacitor circuit are electrically connected to each other, and Output terminals of the first and switched capacitor circuits are electrically connected to each other.

2. The power converter package according to claim 1, wherein: The first device also includes: a first active device layer including a plurality of first switches in the first switched capacitor circuit; a passive device layer above the first active device layer, the passive device layer including a plurality of capacitors in the first switched capacitor circuit; and A second active device layer is above the passive device layer, the second active device layer including a second plurality of switches in the first switched capacitor circuit.

3. The power converter package according to claim 2, wherein: The first switch is a phase switch and the second switch is a stack switch.

4. The power converter package according to claim 2 or 3, wherein: The passive device layer includes a glass wafer.

5. The power converter package according to any one of claims 2 to 4, wherein: The first device also includes: One or more heat spreader layers on a top side or a bottom side of the first device, the one or more heat spreader layers comprising a thermally conductive insulating material.

6. The power converter package of claim 1, wherein: The first device also includes: Substrate or lead frame; one or more capacitors in the first switched capacitor circuit mounted on the substrate or lead frame; one or more dies mounted on the substrate or leadframe, the one or more dies comprising a plurality of switches in the first switched capacitor circuit; and An encapsulation material is deposited over the one or more dies and the one or more capacitors, wherein the one or more vias pass through the encapsulation material.

7. The power converter package of claim 6, wherein: The first device also includes a heat spreader over the one or more dies.

8. The power converter package according to any one of claims 1 to 7, further comprising: One or more heat spreader layers vertically disposed between two adjacent devices in the plurality of devices, any one of the one or more heat spreader layers comprising: a first bonding contact on one surface for communicating with one of the two adjacent devices; and A second bonding contact on another surface opposite to the one surface is provided for communicating with the other of the two adjacent devices.

9. The power converter package of claim 8, wherein: The one or more heat spreader layers include a vapor chamber with a thermal interface material placed between vapor chamber walls of the vapor chamber and a heat sink.

10. The power converter package according to any one of claims 1 to 9, wherein: The plurality of devices are stacked on each other by electrical bonding, thermocompression bonding, or hybrid bonding.

11. The power converter package according to any one of claims 1 to 10, wherein: A thermal interface material is placed between a top device of the plurality of devices and a heat sink, the top device providing a bottom bonding contact on one surface, the thermal interface material contacting another surface of the top device opposite the one surface.

12. The power converter package according to any one of claims 1 to 11, wherein: The first device also includes a controller for controlling operation of the first switched capacitor circuit.

13. The power converter package according to any one of claims 1 to 12, wherein: The first device also includes an inductor for a multi-level power converter.

14. A device for power conversion, comprising: A plurality of switched capacitor circuits respectively arranged in a plurality of integrated circuit packages stacked vertically, the switched capacitor circuits being coupled in parallel to convert a first voltage into a second voltage, wherein at least one package of the plurality of integrated circuit packages comprises: a bottom bonding contact on one surface providing connection to a substrate or an adjacent underlying package stacked below the package; a top bonding contact on another surface opposite the one surface, the top bonding contact providing connection to an adjacent upper package stacked above the package; and One or more through-holes connect the corresponding one or more bottom bonding contacts and the corresponding one or more top bonding contacts.

15. The device according to claim 14, wherein: the plurality of integrated circuit packages including a top package including a bottom bonding contact on one surface, the bottom bonding contact providing connection to an adjacent underlying package stacked below the top package; as well as A thermal interface material is placed between another surface of the top package opposite to the one surface and a heat sink.

16. The device according to claim 14 or 15, further comprising: One or more controller circuits for controlling operation of the plurality of switched capacitor circuits, the one or more controller circuits being disposed in one or more of the plurality of integrated circuit packages.

17. The device according to claim 16, wherein: The one or more controller circuits include: a main controller circuit disposed in a bottom package of the plurality of integrated circuit packages; and One or more slave controller circuits are arranged in one or more packages stacked above the bottom package and are electrically connected to the master controller circuit through corresponding bottom bonding contacts and top bonding contacts of the plurality of integrated circuit packages.

18. The device according to any one of claims 14 to 17, wherein: The plurality of switched capacitor circuits are controlled by an external controller coupled to the plurality of switched capacitor circuits.

19. The device according to any one of claims 14 to 18, further comprising: One or more heat spreader layers are respectively vertically disposed between two adjacent integrated circuit packages, and a thermal interface material is placed between the one or more heat spreader layers and the heat sink.

20. The device according to any one of claims 14 to 19, further comprising: A heat sink is configured to carry heat away from the plurality of integrated circuit packages, wherein a thermal interface material is placed between a top package of the plurality of integrated circuit packages and the heat sink.

21. A method for integrated circuit packaging, comprising: Multiple switched capacitor circuits are vertically stacked in multiple sub-packages by: bonding a first bottom bonding contact disposed on one surface of a first sub-package to a substrate or an adjacent underlying sub-package stacked below the first sub-package, the first sub-package including a first switched capacitor circuit; as well as A first top bonding contact placed on another surface of the first sub-package opposite to the one surface is bonded to a second bottom bonding contact placed on one surface of a second sub-package, the second sub-package including a second switching capacitor circuit or a heat spreader layer, and corresponding one or more first bottom bonding contacts and corresponding one or more first top bonding contacts are connected via one or more through holes.

22. The method according to claim 21, wherein: The second sub-package includes the heat spreader layer, the method further comprising: A second top bonding contact disposed on another surface of the second sub-package opposite to the one surface is bonded to a third bottom bonding contact on one surface of a third sub-package including the second switched capacitor circuit.

23. The method according to claim 21 or 22, wherein: The second sub-package includes a vapor chamber as the heat spreader layer, the method further comprising: A heat sink is positioned and a thermal interface material is placed between a vapor chamber wall of the vapor chamber and the heat sink.

24. The method according to any one of claims 21 to 23, further comprising: A heat spreader is positioned and a thermal interface material is placed between a top sub-package of the plurality of sub-packages and the heat spreader.

25. The method according to any one of claims 21 to 24, wherein: One of the plurality of sub-packages is formed by: forming a first active device layer including a plurality of first switches; forming a passive device layer including a plurality of capacitors over the first active device layer; and A second active device layer including a plurality of second switches is formed over the passive device layer.

26. The method according to any one of claims 21 to 25, wherein: One of the plurality of sub-packages is formed by: mounting one or more capacitors in a corresponding switched capacitor circuit on a substrate or lead frame; mounting one or more dies on the substrate or leadframe, the one or more dies comprising a plurality of switches in the corresponding switched capacitor circuit; as well as An encapsulation material is deposited over the one or more dies and the one or more capacitors.

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