Advanced Capacitive Nano-Electromechanical Chip Third Generation Unit and Reverse Thrust System

Abstract

The present application relates to the technical field of nanoelectromechanical systems (NEMS), and discloses a third-generation unit of an advanced capacitive nanoelectromechanical chip and a reverse thrust system, including side pillars, a diaphragm and a substrate, wherein the diaphragm is fixed to the side pillars; the side pillars are fixed to the substrate, the diaphragm is located above the substrate, and a cavity is provided between the diaphragm and the substrate; a diaphragm support structure for supporting the diaphragm is provided in the cavity below the diaphragm; the diaphragm support structure is fixed to the side pillars. A layer of diaphragm support structure is added below the diaphragm, thereby adding an elastic force, that is, through the balance of four forces, two upward elastic forces and one downward electrostatic force, and one gravity, the space utilization rate CU is improved. Solving the problem of receiving and transmitting ultrasound at a large sound pressure in a propagation medium through a nanoelectromechanical chip (CNUT) is essentially solving the contradiction between high transmission voltage and exceeding the structural design limit.

Description

Technical Field

[0001] The present application relates to the technical field of nanoelectromechanical systems (NEMS), and in particular to a third generation unit of an advanced capacitive nanoelectromechanical chip and a reverse thrust system. Background Art

[0002] In the field of integrated circuit / chip technology, especially VLSI design in the field of nano-directional acoustic energy, specifically for capacitive nano-electromechanical (CNUT) chip array units in nano-electromechanical (NEMS) chip design. In ordinary capacitive micro-electromechanical ultrasonic transducers (CMUT), the movement mechanism of the diaphragm is driven by the electrostatic attraction (non-linear downward) applied between the diaphragm and the substrate (i.e., the positive and negative electrodes). In addition, the diaphragm itself is also affected by its own gravity (volume force: downward) and counteracts the mechanical (elastic) force of the diaphragm itself (linear upward). These three act together on the diaphragm and are in a state of dynamic equilibrium. The specific force analysis is as follows: Figure 1 shown.

[0003] Where A is the electrode area; ε0 is the dielectric constant of the capacitor cavity (vacuum);

[0004] g const : Gravity acceleration of the application; m: Diaphragm mass;

[0005] Fs: mechanical force Fs=K×w; Fg: gravity g=m×g const ;

[0006] Fe: electrostatic force Fe = ε0 × A × V 2 / (2×(g o -w) 2 );

[0007] Balance of three forces: Fs=Fe+Fg.

[0008] In the force analysis of the diaphragm, three forces are mainly considered: electrostatic force Fe (surface force, downward direction), gravity Fg (volume force, downward direction) and mechanical force Fs (recovery elastic force, upward direction). Among them, the electrostatic force Fe is significantly enhanced when the object size is less than 1mm, becoming the dominant force, and increases with the increase of displacement w and the quadratic growth of voltage V. Gravity Fg is relatively small when the object size is less than 1mm and is not the dominant force. The mechanical force Fs is related to the material properties and has nothing to do with the size. It increases linearly with the increase of displacement w.

[0009] However, existing CMUT products have voltage-related design defects. Specifically, because the linear force and nonlinear force increase and decrease with the amplitude, the displacement of the diaphragm is limited, usually less than 1 / 3 of the cavity height (CU <33%). This is because when the diaphragm displacement exceeds this limit, the electrostatic force Fe will grow rapidly, causing the upper electrode to adhere to the lower electrode of the substrate, resulting in a short circuit and CMUT failure. This limitation is a globally recognized theoretical conclusion, that is, in the existing technology, the voltage between the upper and lower electrodes must not exceed the collapse voltage to avoid failure problems caused by excessive diaphragm amplitude.

[0010] Figure 2 A cross-sectional panoramic view of a conventional CMUT is shown, further illustrating the structure and principle of the prior art.

[0011] In summary, in view of the voltage design defects in existing CMUT products, an improved capacitive nanoelectromechanical chip array unit design is proposed to improve the displacement range and working efficiency of the diaphragm. Summary of the invention

[0012] In order to solve the problem of transmitting and receiving ultrasound at a high sound pressure in a propagation medium through a nanoelectromechanical chip (CNUT), the essence is to solve the contradiction between high transmission voltage and exceeding the structural design limit (positive and negative poles attracting each other and causing chip failure). This application provides an advanced capacitive nanoelectromechanical chip third-generation unit and reverse thrust system.

[0013] In a first aspect, the present application provides a third generation unit of an advanced capacitor nanoelectromechanical chip, which adopts the following technical solution:

[0014] A third generation unit of an advanced capacitive nano-electromechanical chip comprises a side support, a diaphragm and a substrate, wherein the diaphragm is fixed on the side support; the side support is fixed on the substrate; the diaphragm is located above the substrate, and a cavity is provided between the diaphragm and the substrate;

[0015] A diaphragm support structure for supporting the diaphragm is arranged in the cavity below the diaphragm; the diaphragm support structure is fixed on the side support pillars.

[0016] By adopting the above technical solutions, the capacitance effect and nano-scale mechanical structure are used to achieve efficient energy conversion. Compared with traditional CMUT, it has higher sound pressure output. By precisely designing the size and shape of the cavity, the emission direction and frequency characteristics of ultrasound can be optimized. The diaphragm support structure provides additional support and stability to ensure that the diaphragm can still work normally under high-voltage emission voltage. It helps to reduce the deformation and fatigue of the diaphragm and extend the service life of CNUT. In view of the contradiction between the propagation of ultrasound at high sound pressure in the medium and the material and structural limitations of CNUT, the third-generation CNUT unit has achieved a breakthrough through innovative design. It can withstand higher emission voltages while ensuring efficient ultrasonic emission, thereby increasing the propagation distance and sound intensity of ultrasound.

[0017] Optionally, the diaphragm support structure is an annular structure, and the diaphragm support structure and the outer peripheral side edge of the diaphragm are aligned; the diaphragm support structure and the diaphragm are concentrically arranged.

[0018] Optionally, the material of the diaphragm support structure includes: silicon dioxide, silicon nitride or single crystal silicon.

[0019] Optionally, the thickness dimension Y of the diaphragm support structure ranges from 0.21um to 2.1um.

[0020] Optionally, the distance from the outer ring edge to the inner ring edge of the diaphragm support structure is the width dimension T of the diaphragm support structure, and the lateral dimension of the chip is the chip length D; the ratio of the width dimension T of the diaphragm support structure to the chip length D is in the range of 17% to 25%.

[0021] Optionally, the chip length D ranges from 18 microns to 5980 microns.

[0022] Optionally, the 3D structure composed of the diaphragm and the substrate has the following structures:

[0023] The first type: the 3D structure composed of the diaphragm and the substrate has a circular front projection and a rectangular side projection, and the 3D structure is cylindrical as a whole; the diaphragm support structure has a circular ring shape and a rectangular side projection, and the 3D structure is a circular column shape;

[0024] The second type: the 3D structure composed of the diaphragm and the substrate has a square shape in the overall frontal projection and a rectangular shape in the side projection, and the 3D structure is in the shape of a square column as a whole; the frontal projection of the diaphragm support structure is a ring shape with a square outside and a circular inside, and the side projection is a rectangle, and the 3D structure is in the shape of a ring column with a square outside and a circular inside;

[0025] The third type: the 3D structure composed of the diaphragm and the substrate has a regular polygon in its overall frontal projection and a rectangle in its side projection, and the 3D structure is in the shape of a regular polygonal column as a whole; the frontal projection of the diaphragm support structure is a ring with an outer regular polygon and an inner circle, and the side projection is a rectangle, and the 3D structure is in the shape of a ring column with an outer regular polygon and an inner circle; wherein each side of the regular polygon is equal, and the number of sides is greater than 4;

[0026] The fourth type: the 3D structure composed of the diaphragm and the substrate has an elliptical overall front projection, a rectangular side projection, and an elliptical cylinder overall; the diaphragm support structure has an elliptical ring-shaped front projection, a rectangular side projection, and an elliptical cylinder-shaped 3D structure;

[0027] The fifth type: the 3D structure composed of the diaphragm and the substrate has an overall frontal projection of a rectangle, a side projection of a rectangle, and the 3D structure as a whole is in the shape of a rectangular column; the frontal projection of the diaphragm support structure is a ring with an outer rectangle and an inner ellipse, and the side projection is a rectangle, and the 3D structure is in the shape of a ring column with an outer rectangle and an inner ellipse.

[0028] Optionally, the substrate includes a first insulating layer, a negative electrode layer / zero electrode layer, a second insulating layer and a structural layer arranged in sequence; the first insulating layer is located in the cavity, the negative electrode layer / zero electrode layer is located on the side of the first insulating layer away from the cavity, the second insulating layer is located on the side of the negative electrode layer / zero electrode layer away from the first insulating layer, and the structural layer is located on the side of the second insulating layer away from the negative electrode layer / zero electrode layer.

[0029] Optionally, the material of the substrate is set as follows:

[0030] The first insulating layer: silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide;

[0031] The negative electrode layer / zero electrode layer: aluminum, silver, gold, copper, tungsten, platinum, zinc or zinc aluminum;

[0032] The second insulating layer: silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide;

[0033] The structural layer: single crystal silicon or polycrystalline silicon;

[0034] The material of the side pillars is set as follows: silicon dioxide, polycrystalline silicon or single crystal silicon.

[0035] Optionally, the total thickness Z of the first insulating layer, the negative electrode layer / zero electrode layer and the second insulating layer is in the range of 1 um to 7 um, and the thickness proportions from top to bottom are as follows:

[0036] The thickness of the first insulating layer accounts for 17% to 48% of the total thickness Z;

[0037] The thickness of the negative electrode layer / zero electrode layer accounts for 2% to 21% of the total thickness Z;

[0038] The thickness of the second insulating layer accounts for 81% to 31% of the total thickness Z.

[0039] Optionally, the diaphragm includes a third insulating layer, a positive electrode layer and a fourth insulating layer; the fourth insulating layer is located in the cavity, the positive electrode layer is located on a side of the fourth insulating layer away from the cavity, and the third insulating layer is located on a side of the positive electrode layer away from the fourth insulating layer.

[0040] Optionally, the material of the diaphragm is set as follows:

[0041] The third insulating layer: silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide;

[0042] The positive electrode layer: aluminum, silver, gold, copper, tungsten, platinum, zinc or aluminum zinc;

[0043] The fourth insulating layer is made of silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide.

[0044] Optionally, the total thickness dimension X of the diaphragm ranges from 0.5um to 4um, and the thickness proportions from top to bottom are as follows:

[0045] The thickness of the third insulating layer accounts for 17% to 48% of the total thickness X;

[0046] The thickness of the positive electrode layer accounts for 2% to 21% of the total thickness X;

[0047] The fourth insulating layer accounts for 81% to 31% of the total thickness X.

[0048] Optionally, a distance from the bottom end of the diaphragm to the top end of the substrate in the cavity is a cavity depth C; and the range of the cavity depth C is 0.38 um to 25.8 um.

[0049] Optionally, the vibration frequency range of the chip unit is 47.2 khz~14048 khz, and the bandwidth range is 200 hz~1000 hz.

[0050] Optionally, a voltage is applied between the diaphragm and the substrate, and the value of CU ranges from 46% to 90.5%; when the value of CU is 82% and the normalized voltage is between 93% and 94%, the normalized spacing increases negatively linearly.

[0051] In a second aspect, the present application also discloses a reverse thrust system:

[0052] A reverse thrust system, based on any of the above-mentioned advanced capacitive nano-electromechanical chip third-generation units, utilizes the movement of the diaphragm in the chip CNUT third-generation unit to push the movement of the dielectric molecules, and the dielectric molecules generate an equal and opposite reaction force on the CNUT unit; the dielectric molecules include nitrogen molecules and oxygen molecules in the air, or water molecules in water, or particles or molecules in space.

[0053] Optionally, before the chip is packaged, the weight of the third generation unit of the chip CNUT = the volume occupied by the material of each layer × density × gravitational acceleration; thrust = reaction force; thrust-to-weight ratio of the chip unit = thrust / weight of the chip unit.

[0054] To summarize, the present application includes at least one of the following beneficial technical effects: adding a two-layer diaphragm support structure under the diaphragm, thereby adding two elastic forces, that is, five-force balance, including three upward elastic forces, one downward electrostatic force and one gravity, ultimately improving the space utilization rate CU.

[0055] The reverse thrust system utilizes the diaphragm movement of the CNUT third-generation unit to push the medium molecules, thereby generating a reaction force; by calculating the thrust and thrust-to-weight ratio, the performance and efficiency of the system can be evaluated.

[0056] The present invention can realize chip-level ultrasonic high-power emission in the form of a highly integrated CNUT chip, combined with the directional characteristics of ultrasound, and combined with sensitive sensors to achieve a high-quality combination of long distance, high power, and ultra-sensitivity, thereby realizing various future science fiction applications of various chip-level ultrasonic directional sound energy. At the same time, it greatly improves the applications of ultrasonic scalpel, ultrasonic treatment, ultrasonic depth imaging, ultrasonic long-distance fish sonar imaging, ultrasonic suspension, ultrasonic power, ultrasonic flight, etc., greatly reduces the physical mass of the end side of the transmitting equipment, and improves the carrying capacity of the effective detection load of the vehicle. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Figure 1 This is the schematic diagram of the traditional CMUT design.

[0058] Figure 2 This is a panoramic view of the traditional CMUT cross section.

[0059] Figure 3 This is an enlarged structural diagram of the diaphragm support of the present application (left side).

[0060] Figure 4 This is a 2D cross-sectional view of the third-generation chip unit of this application.

[0061] Figure 5 This is the chip unit size diagram of this application.

[0062] Figure 6 It is a schematic diagram of the parameter XYZ size position.

[0063] Figure 7 The diagram is a schematic diagram of the various external structures of the present application, wherein (a) is a cylindrical shape, (b) is a square column shape, (c) is a regular polygonal column shape, (d) is an elliptical column shape, and (e) is a rectangular column shape.

[0064] Figure 8 This is a space utilization curve diagram when the CU is 82% in this embodiment.

[0065] Fig. 9 This is a partial enlarged view of the space utilization curve when CU is 82% in this embodiment.

[0066] Fig.10 This is the corresponding frequency curve when the chip D / 2 of the embodiment of the present application is 308 microns.

[0067] Fig.11 It is the vibration mode diagram with characteristic frequency of 80162 Hz.

[0068] Fig.12 It is the vibration mode diagram with characteristic frequency of 157380 Hz.

[0069] Fig.13 It is the vibration mode diagram with the characteristic frequency of 280970hz.

[0070] Fig.14 It is the vibration mode diagram with the characteristic frequency of 489550hz.

[0071] Fig.15 It is the vibration mode diagram with characteristic frequency of 765650hz.

[0072] Fig.16 It is the vibration mode diagram with characteristic frequency of 1027500 Hz.

[0073] Fig.17 This is a CU simulation curve diagram when D / 2 is 9 microns in other implementations.

[0074] Fig.18 This is a corresponding frequency curve diagram when D / 2 is 9 microns in other implementations.

[0075] Fig.19 This is a CU simulation curve diagram when D / 2 is 120 microns in other implementations.

[0076] Fig. 20 This is a corresponding frequency curve diagram when D / 2 is 120 microns in other implementation modes.

[0077] Fig.21This is a CU simulation curve diagram when D / 2 is 200 microns in other implementations.

[0078] Fig. 22 This is a corresponding frequency curve diagram when D / 2 is 200 microns in other implementation modes.

[0079] Fig.23 This is a CU simulation curve diagram when D / 2 is 400 microns in other implementations.

[0080] Fig.24 This is a corresponding frequency curve diagram when D / 2 is 400 microns in other implementations.

[0081] Fig.25 This is a CU simulation curve diagram when D / 2 is 2990 microns in other implementations.

[0082] Fig.26 This is a corresponding frequency curve diagram when D / 2 is 2990 microns in other implementations.

[0083] Fig. 27 It is a simulation diagram of the direction of force in the embodiment of the present application.

[0084] Fig.28 This is the simulation diagram of the total reaction force when the size of chip D / 2 is 9 microns.

[0085] Fig.29 This is the simulation diagram of the total reaction force when the size of chip D / 2 is 120 microns.

[0086] Fig.30 This is the simulation diagram of the total reaction force when the size of chip D / 2 is 200 microns.

[0087] Fig.31 This is the simulation diagram of the total reaction force when the size of chip D / 2 is 308 microns.

[0088] Fig.32 This is the simulation diagram of the total reaction force when the size of chip D / 2 is 400 microns.

[0089] Fig.33 This is the simulation diagram of the total reaction force when the size of chip D / 2 is 2990 microns.

[0090] Fig.34 This is a simulation diagram of a CU value of 45% in other implementations of the present application.

[0091] Fig.35 This is a frequency diagram of a CU value of 45% in other implementations of the present application.

[0092] Fig.36This is a reverse thrust diagram with a CU value of 45% in other embodiments of the present application. DETAILED DESCRIPTION

[0093] Embodiments of the present application are described in detail below, examples of which are shown in the accompanying drawings.

[0094] In the description of this specification, the description with reference to the terms "certain embodiments", "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0095] Embodiment 1

[0096] The present application embodiment discloses a third generation unit of an advanced capacitor nanoelectromechanical chip, referring to Figure 3 and Figure 4 , including side pillars, a diaphragm and a substrate, the side pillars are fixed on the substrate, and the diaphragm is fixed on the side pillars. The diaphragm is located above the substrate, and a cavity is provided between the diaphragm and the substrate; a diaphragm support structure for supporting the diaphragm is provided in the cavity below the diaphragm. The diaphragm support structure is fixed on the side pillars.

[0097] The capacitance effect and nano-scale mechanical structure are used to achieve efficient energy conversion. Compared with traditional CMUT, it has higher sound pressure output. By precisely designing the size and shape of the cavity, the emission direction and frequency characteristics of ultrasound can be optimized. The diaphragm support structure provides additional support and stability to ensure that the diaphragm can still work normally under high-voltage emission voltage. It helps to reduce the deformation and fatigue of the diaphragm and extend the service life of CNUT. In view of the contradiction between the propagation of ultrasound at high sound pressure in the medium and the limitations of CMUT materials and structures, the third-generation CNUT unit has achieved a breakthrough through innovative design. It can withstand higher emission voltages while ensuring efficient ultrasound emission, thereby increasing the propagation distance and sound intensity of ultrasound.

[0098] The diaphragm support structure is an annular structure, and the outer peripheral edges of the diaphragm support structure and the diaphragm are aligned; the diaphragm support structure and the diaphragm are arranged concentrically. The side pillars are fixed to the circumferential side of the substrate, the side pillars and the substrate form a groove-shaped structure, the diaphragm is fixed to the inner ring side of the side pillars; the diaphragm support structure is fixed to the inner ring side of the side pillars. In practical applications, the side pillars and the substrate can be designed and formed as one piece.

[0099] The diaphragm support structure and the diaphragm are arranged around the same center, ensuring the symmetry and stability of the structure; it helps to reduce the asymmetry during the vibration process, thereby improving the vibration efficiency and performance of the CNUT. The outer peripheral edges of the diaphragm support structure and the diaphragm are aligned to ensure the compactness and integrity of the structure. This alignment design helps to reduce energy loss during vibration and improve the energy conversion efficiency of the CNUT. Therefore, the ring structure design enhances the overall stability of the CNUT, allowing the diaphragm to maintain a stable shape and position during vibration. By precisely controlling the radius difference of the diaphragm support structure, the vibration mode and frequency response of the CNUT can be optimized. The compact structural design and aligned edges reduce energy loss during vibration and improve the energy conversion efficiency of the CNUT. The ring structure design helps to disperse the stress of the diaphragm during vibration, reduce deformation and fatigue, and thus extend the service life of the CNUT.

[0100] The materials of the diaphragm support structure include: silicon dioxide, silicon nitride or single crystal silicon.

[0101] In this embodiment, it is arranged that the material of the diaphragm support structure is silicon dioxide.

[0102] The total thickness dimension Y of the diaphragm support structure ranges from 0.21um to 2.1um, and is set to 2.1um in this embodiment, and is set to 0.21um, 1um or 2um in other embodiments.

[0103] Reference Figure 5 and Figure 6 , the distance from the outer ring edge to the inner ring edge of the diaphragm support structure is the width dimension T of the diaphragm support structure, and the transverse dimension of the chip is the chip length D; the ratio of the width dimension T of the diaphragm support structure to the chip length D is in the range of 17% to 25%. In this embodiment, it is set to 17%. In other embodiments, the ratio is set to 18%, 19%, 20%, 21%, 22%, 23% or 24%.

[0104] The chip length D ranges from 18 micrometers to 5980 micrometers. In this embodiment, it is set to 0.6 mm. In other embodiments, the chip length D is set to 18 micrometers, 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.8 mm, 1.0 mm, 1.5 mm, 2.0 mm, 2.5 mm, 2.6 mm, 2.7 mm, 2.8 mm, 2.9 mm, 2.99 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm, 5 mm or 5.98 mm.

[0105] The 3D structure composed of the diaphragm and the substrate has the following structures:

[0106] The first one: reference Figure 7In (a), the 3D structure composed of the diaphragm and the substrate has a circular frontal projection, a rectangular side projection, and a cylindrical shape. The diaphragm support structure has a circular ring-shaped frontal projection, a rectangular side projection, and a circular column-shaped 3D structure.

[0107] The second type: reference Figure 7 In (b), the 3D structure composed of the diaphragm and the substrate has a square overall frontal projection, a rectangle side projection, and the 3D structure is in the shape of a square cylinder as a whole; the diaphragm support structure has a ring shape with a square outside and a circle inside, and a rectangle side projection, and the 3D structure has a ring-shaped column with a square outside and a circle inside.

[0108] The third type: reference Figure 7 In (c), the overall frontal projection of the 3D structure composed of the diaphragm and the substrate is a regular polygon, and the side projection is a rectangle, and the 3D structure as a whole is a regular polygonal column; the frontal projection of the diaphragm support structure is a ring with an outer regular polygon and an inner circle, and the side projection is a rectangle, and the 3D structure is a ring-shaped column with an outer regular polygon and an inner circle; wherein each side of the regular polygon is equal, and the number of sides is greater than 4.

[0109] The fourth type: reference Figure 7 In (d), the front projection of the 3D structure composed of the diaphragm and the substrate is an ellipse, and the side projection is a rectangle, and the 3D structure as a whole is an elliptical cylinder; the front projection of the diaphragm support structure is an elliptical ring, and the side projection is a rectangle, and the 3D structure is an elliptical ring cylinder.

[0110] Fifth: Reference Figure 7 In (e), the 3D structure composed of the diaphragm and the substrate has a rectangular overall frontal projection, a rectangular side projection, and a rectangular shape. The 3D structure is in the shape of a rectangular column as a whole; the frontal projection of the diaphragm support structure is a ring with an outer rectangle and an elliptical inner shape, and the side projection is a rectangle. The 3D structure is in the shape of a ring column with an outer rectangle and an elliptical inner shape.

[0111] This embodiment is the first structure, and in other implementations, it can also be any one of the second, third, fourth or fifth structures.

[0112] The substrate includes a first insulating layer, a negative electrode layer / zero electrode layer, a second insulating layer and a structural layer which are arranged in sequence; the first insulating layer is located in a cavity, the negative electrode layer / zero electrode layer is located on a side of the first insulating layer away from the cavity, the second insulating layer is located on a side of the negative electrode layer / zero electrode layer away from the first insulating layer, and the structural layer is located on a side of the second insulating layer away from the negative electrode layer / zero electrode layer.

[0113] The material settings of the substrate and the side pillars are shown in Table 1:

[0114]

[0115] In this embodiment, the thickness of the second insulating layer, the negative electrode layer / zero electrode layer and the first insulating layer from top to bottom are 1 micron silicon nitride, 0.1 micron aluminum, and 1 micron silicon dioxide; the structural layer is single crystal silicon; and the side pillars are single crystal silicon.

[0116] In other embodiments, it may be 1 micron silicon dioxide, 0.1 micron aluminum zinc, 1 micron silicon nitride; the structural layer is polycrystalline silicon; and the side pillars are silicon dioxide, polycrystalline silicon or single crystal silicon.

[0117] The total thickness Z of the first insulating layer, the negative electrode layer / zero electrode layer and the second insulating layer ranges from 1um to 7um; the thickness proportions from top to bottom are as follows:

[0118] The thickness of the first insulating layer accounts for 17% to 48% of the total thickness Z;

[0119] The thickness of the negative electrode layer / zero electrode layer accounts for 2%~21% of the total thickness Z;

[0120] The thickness of the second insulating layer accounts for 81% to 31% of the total thickness Z.

[0121] The total thickness Z is set to 2.1 um in this embodiment, and is set to 1 um, 2 um, 3 um, 4 um, 5 um, 6 um or 7 um in other embodiments.

[0122] In this embodiment, the thickness of the first insulating layer is set to 47% of the total thickness Z. In other embodiments, the thickness of the first insulating layer accounts for 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46% or 48% of the total thickness Z.

[0123] The thickness of the negative electrode layer / zero electrode layer accounts for 4% of the total thickness Z in this embodiment, and is set to 2%, 3%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20% or 21% in other embodiments.

[0124] The thickness of the second insulating layer accounts for 47% of the total thickness Z in this embodiment, and is set to 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 48%, 49%, 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59%, 60%, 61%, 62%, 63%, 64%, 65%, 66%, 67%, 68% or 81% in other embodiments.

[0125] The thickness of the structural layer ranges from 20um to 300um; the more preferred thickness range of the structural layer is from 200um to 300um. The thickness of the structural layer is set to 200um in this embodiment, and is set to 20um, 30um, 40um, 50um, 60um, 70um, 80um, 90um, 100um, 215um, 225um, 250um, 275um or 300um in other embodiments.

[0126] The diaphragm includes a third insulating layer, a positive electrode layer and a fourth insulating layer; the fourth insulating layer is located in the cavity, the positive electrode layer is located on a side of the fourth insulating layer away from the cavity, and the third insulating layer is located on a side of the positive electrode layer away from the fourth insulating layer.

[0127]

[0128] In this embodiment, the material settings and corresponding thicknesses of the third insulating layer, the positive electrode layer and the fourth insulating layer from top to bottom are: 1 micron silicon nitride, 0.1 micron aluminum, and 1 micron silicon dioxide.

[0129] In other embodiments, it may be 1 micron silicon dioxide, 0.1 micron aluminum zinc, and 1 micron silicon dioxide.

[0130] The total thickness dimension X of the diaphragm ranges from 0.5um to 4um, and the thickness ratios from top to bottom are as follows:

[0131] The thickness of the third insulating layer accounts for 17% to 48% of the total thickness X;

[0132] The thickness of the positive electrode layer accounts for 2% to 21% of the total thickness X;

[0133] The fourth insulating layer accounts for 81% to 31% of the total thickness X.

[0134] The total thickness X is set to 2.1 um in this embodiment, and is set to 0.5 um, 1 um, 2 um, 3 um or 4 um in other embodiments.

[0135] The thickness of the third insulating layer accounts for 47% of the total thickness X in this embodiment, and is set to 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46% or 48% in other embodiments.

[0136] The thickness of the positive electrode layer accounts for 4% of the total thickness X in this embodiment, and is set to 2%, 3%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, and 21% in other embodiments.

[0137] The thickness of the fourth insulating layer accounts for 47% of the total thickness X in the present embodiment, and is set to 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 48%, 49%, 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59%, 60%, 61%, 62%, 63%, 64%, 65%, 66%, 67%, 68% or 81% in other embodiments.

[0138] The distance from the bottom of the diaphragm to the top of the substrate in the cavity is the cavity depth C; the range of the cavity depth C is 0.38um~25.8um. ​​In this embodiment, the cavity depth C is set to 17um, and in other embodiments, it is set to 0.38um, 1um, 2.5um, 5um, 7.5um, 8um, 10um, 15um, 17.5um, 20um or 25.8um.

[0139] The cavity is vacuumed in this embodiment, and can be filled with inert gas or high-pressure gas in other embodiments. The inert gas is nitrogen N2, helium He, neon Ne, argon Ar, krypton Kr or xenon Xe. The high-pressure gas is 1 to 5 times the pressure of air.

[0140] Two diaphragm supports are added under the diaphragm. After simulation, the CU value range is: 46%~90.5%.

[0141] Reference Figure 8 In this embodiment, when D / 2 is 308 microns, two diaphragm supports are added under the diaphragm. After simulation, the CU value reaches 82%> 33% of the traditional Cmut. The curve fitting result is as follows: Figure 8 As shown, compared with the traditional CMUT, the CU value of the present invention is significantly improved.

[0142] Reference Fig. 9 , a voltage is applied between the diaphragm and the substrate. When the normalized voltage is between 85% and 95%, Fig.13 In the figure, when the CU value is 82% and the normalized voltage is between 93% and 94%, the normalized spacing increases negatively linearly; that is, to achieve a CU of 82%, the voltage only needs to be in a good range, which lays a good theoretical foundation for the low-cost construction of subsequent circuits.

[0143] In this application, the vibration frequency range of the chip unit is: 47.2khz~14048khz, and the bandwidth range is 200hz~1000hz. This performance makes CMUT have a wider application prospect in the fields of ultrasonic imaging.

[0144] Reference Fig.10 , is the corresponding frequency curve when the D / 2 of the chip is 308 microns, the low frequency point is 74 khz, the high frequency point is 77 khz, the bandwidth is 3000 hz, and the inside and outside of the chip are air in this embodiment.

[0145] In this embodiment, when D / 2 of the chip unit is 308 microns:

[0146] Fig.11 It is the vibration mode diagram with characteristic frequency of 80162 Hz.

[0147] Fig.12 It is the vibration mode diagram with characteristic frequency of 157380 Hz.

[0148] Fig.13 It is the vibration mode diagram with the characteristic frequency of 280970hz.

[0149] Fig.14 It is the vibration mode diagram with the characteristic frequency of 489550hz.

[0150] Fig.15 It is the vibration mode diagram with characteristic frequency of 765650hz.

[0151] Fig.16 It is the vibration mode diagram with characteristic frequency of 1027500 Hz.

[0152] Wherein, material breakdown voltage: stoichiometric ratio of SiNx (fraction x of nitrogen in SiNx): when x>1.32, at this time, the breakdown voltage of 1um thick SiN is 1100V. All configurations of the present invention are within this voltage range.

[0153] Sound intensity comparison:

[0154] According to the sound intensity formula I=ρ×v×ω×Ao^2, where:

[0155] ρ represents the density of the medium (here is air); v represents the speed of sound; ω represents the frequency of the ultrasonic wave; Ao represents the amplitude.

[0156] By formula calculation, the new design of the third-generation chip is compared with the traditional CMUT. Taking ultrasound with a frequency of 77khz as an example, the sound intensity on the surface of the sound source is increased by 5.4 times, as shown in Table 3:

[0157]

[0158] Propagation distance comparison:

[0159] When ultrasonic waves propagate in the air, they will be attenuated due to the viscosity of air molecules.

[0160] Air attenuation coefficient a:

[0161] a=5.578×10^(-9)×(T0 / T1) / (T0+110.4)×ω×ω / (p0 / p1);

[0162] Where T0 is the real-time temperature, T1 is the reference temperature, p0 is the real-time atmospheric pressure, p1 is the reference atmospheric pressure, and ω is the frequency of the ultrasonic wave.

[0163]

[0164] As shown in Table 4, we take the case where the amplitude in the air is attenuated to 70.7% of the sound source (half sound intensity) as an example, take the 77khz of the ordinary CMUT as the benchmark, take the amplitude reaching the position of the half sound intensity point of the ordinary CMUT as the target, and calculate the distance of the ultrasonic wave emitted by the ordinary CMUT according to the amplitude attenuation formula:

[0165] Ax=Ao×e^(-a×ω×x). It is known that the ultrasonic amplitude of the ultrasonic wave emitted by the ordinary CMUT decays to 3.97 microns at a distance of 54.8 meters from the sound source (the sound intensity at this point decays to 50% of that at the sound source). Similarly, when the ultrasonic amplitude emitted by the third-generation chip decays to 3.97 microns, its emission distance is 197.5 meters. The propagation distance is increased by 3.7 times compared with the ordinary CMUT. For details, please refer to Table 5.

[0166]

[0167] The present invention can realize chip-level ultrasonic high-power emission in the form of a highly integrated CNUT chip, combined with the directional characteristics of ultrasound. Combined with sensitive sensors, it can achieve a high-quality combination of large distance, high power and ultra-sensitivity, thereby realizing various future science fiction applications of various chip-level ultrasonic directional sound energy. At the same time, it greatly improves ultrasonic applications such as ultrasonic knives, ultrasonic treatment, ultrasonic depth imaging, ultrasonic long-distance fish sonar imaging, ultrasonic suspension, ultrasonic power, ultrasonic flight, ultrasonic noise isolation, ultrasonic light control, ultrasonic touch, ultrasonic expulsion, ultrasonic pest control, etc., greatly reduces the physical mass of the end side of the transmitting equipment (the chip of the present invention is in grams), and improves the carrying capacity of the effective detection load of the vehicle.

[0168] Reference Fig.17 In other embodiments of the present application, the difference is that: the D / 2 of the chip is 9 microns; the thickness of the silicon nitride layer is 0.2 microns, accounting for 25% of the diameter, and the thickness of the diaphragm support is 0.21 microns. The diaphragm supports on both sides are added below. After simulation, the CU value reaches 46%> the 33% of the traditional Cmut.

[0169] Reference Fig.18 , frequency point 14048khz, when the air outside the chip is argon, the corresponding frequency curve.

[0170] Reference Fig.19 In other embodiments of the present application, the difference is that: the D / 2 of the chip is 120 microns; the thickness of the silicon nitride layer is 0.5 microns, accounting for 25% of the diameter, and the thickness of the diaphragm support is 0.5 microns. The diaphragm supports on both sides are added below. After simulation, the CU value reaches 87.4%> 33% of the traditional Cmut.

[0171] Reference Fig. 20 , frequency point is 194.8khz, when the air outside the chip is argon, the corresponding frequency curve.

[0172] Reference Fig.21 In other embodiments of the present application, the difference is that: the D / 2 of the chip is 200 microns; the thickness of the silicon nitride layer is 1 micron, accounting for 20% of the diameter, and the thickness of the diaphragm support is 2.1 microns. The diaphragm supports on both sides are added below. After simulation, the CU value reaches 76%> the 33% of the traditional Cmut.

[0173] Reference Fig. 22 , frequency point 177.7khz, when the air inside the chip is 5 times the air outside, the corresponding frequency curve.

[0174] Reference Fig.23In other embodiments of the present application, the difference is that: the D / 2 of the chip is 400 microns; the thickness of the silicon nitride layer is 1 micron, accounting for 25% of the diameter, and the thickness of the diaphragm support is 2.1 microns. The diaphragm supports on both sides are added below. After simulation, the CU value reaches 90.5%> 33% of the traditional Cmut.

[0175] Reference Fig.24 , frequency point 47.2khz, when the air inside the chip is water outside, the corresponding frequency curve.

[0176] Reference Fig.25 In other embodiments of the present application, the difference is that: the D / 2 of the chip is 2990 microns; the thickness of the silicon nitride layer is 1 micron, accounting for 25% of the diameter, and the thickness of the diaphragm support is 1.9 microns. The diaphragm supports on both sides are added below. After simulation, the CU value reaches 74%> the 33% of the traditional Cmut.

[0177] Reference Fig.26 , frequency point is 65khz, when the inside and outside of the chip are air, the corresponding frequency curve.

[0178] Embodiment 2

[0179] An embodiment of the present application discloses a reverse thrust system.

[0180] Ultrasonic waves are mechanical waves, and their essence is to push the molecules in the medium to move forward in front of the array. According to Newton's third law (action and reaction), the diaphragm movement of the unit of the CNUT of the present invention promotes the movement of matter (such as nitrogen molecules and oxygen molecules in the air; or water molecules in water; or particles or molecules in space). The reaction force from the external medium of the chip to the unit of the CNUT of the present invention is equal to the force of the chip on the external medium. For the specific direction of the reaction force, refer to Fig. 27 Simulation diagram analysis.

[0181] The chip reverse thrust design of the third generation unit of the capacitive nanoelectromechanical chip (CNUT) is shown in Table 6 below:

[0182]

[0183] (1) When the chip D / 2 size is 9 microns, in a space environment, inert gas xenon is sprayed to the outside of the chip (when the outside is argon gas) and the inside is air, the maximum peak value of the total reaction force on the Y axis reaches 0.072 Newton (added bias voltage 136 volts) within one arc cycle of the X axis. Fig.28 .

[0184] (2) When the chip D / 2 size is 120 microns, in a space environment, with the chip outside (when the outside is argon) and the inside is air (1.29 kg / m^3), the maximum peak value of the total reaction force on the Y axis reaches 0.171 Newton (added bias voltage 567 volts) within one arc cycle of the X axis. Fig.29 .

[0185] (3) When the chip D / 2 is 200 microns in size, inside the atmosphere, the chip is air (1.29 kg / m^3) outside, and the chip is five times the air pressure (6.45 kg / m^3) inside, within one arc cycle of the X axis, the maximum peak value of the total reaction force on the Y axis reaches 0.258 Newton (added bias voltage 1074 volts). Fig.30 .

[0186] (4) When the chip D / 2 is 308 microns in size, inside the atmosphere, the inside and outside of the chip are all air (1.29 kg / m^3), and within one arc cycle of the X axis, the maximum peak value of the total reaction force on the Y axis reaches 8.88 Newtons (the added bias voltage is 991 volts). Fig.31 .

[0187] (5) When the chip D / 2 is 400 microns in size, the chip is in water with water outside and air inside. When both are air (1.29 kg / m^3), the voltage is 1162 V and the reverse thrust is 8.16 N. Fig.32 .

[0188] (6) When the chip D / 2 size is 2990 microns, in an atmospheric environment, inert gas argon is sprayed to the outside of the chip, and the inside is air, the maximum peak value of the total reaction force on the Y axis reaches 0.006 Newton (added bias voltage 10.35 volts) within one arc cycle of the X axis. Fig.33 .

[0189] Thrust to weight ratio:

[0190] Before the chip is packaged,

[0191] The weight of CNUT chip = volume occupied by each layer of material × density × gravitational acceleration;

[0192] Thrust = reaction force;

[0193] The thrust-to-weight ratio of the chip unit = thrust / weight of the chip unit;

[0194] Therefore, the weight ratio is shown in Table 7:

[0195]

[0196] In other embodiments:

[0197] Reference Fig.34 The width dimension T of the diaphragm support structure accounts for 30% of the chip length D. As shown in the corresponding CU value simulation diagram, the CU value is 45%; compared with the traditional CMUT, the CU value of the present invention is significantly improved.

[0198] Reference Fig.35 , which is the corresponding frequency curve when the CU value is 45% and the width dimension T of the diaphragm support structure accounts for 30% of the chip length D.

[0199] Reference Fig.36 , which is the corresponding thrust diagram when the CU value is 45% and the width dimension T of the diaphragm support structure accounts for 30% of the chip length D.

[0200] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A third generation unit of an advanced capacitor nanoelectromechanical chip, characterized in that: It comprises a side support, a diaphragm and a substrate, wherein the diaphragm is fixed on the side support; the side support is fixed on the substrate; the diaphragm is located above the substrate, and a cavity is provided between the diaphragm and the substrate; A diaphragm support structure for supporting the diaphragm is disposed in the cavity below the diaphragm; the diaphragm support structure is fixed on the side support pillars; A voltage is applied between the diaphragm and the substrate, and the CU value ranges from 46% to 90.5%. When the CU value is 82% and the normalized voltage is between 93% and 94%, the normalized spacing increases negatively linearly.

2. The third generation unit of the advanced capacitor nanoelectromechanical chip according to claim 1, characterized in that: The diaphragm support structure is an annular structure, and the diaphragm support structure and the outer peripheral side edge of the diaphragm are aligned; the diaphragm support structure and the diaphragm are co-centeringly arranged.

3. The third generation unit of the advanced capacitor nanoelectromechanical chip according to claim 2, characterized in that: The material of the diaphragm support structure includes: silicon dioxide, silicon nitride or single crystal silicon.

4. The advanced capacitor nanoelectromechanical chip third generation unit according to claim 2, characterized in that: The thickness dimension Y of the diaphragm support structure ranges from 0.21um to 2.1um.

5. The third generation unit of the advanced capacitor nanoelectromechanical chip according to claim 4, characterized in that: The distance from the outer ring edge to the inner ring edge of the diaphragm support structure is the width dimension T of the diaphragm support structure, and the transverse dimension of the chip is the chip length D; the ratio of the width dimension T of the diaphragm support structure to the chip length D is in the range of 17% to 25%.

6. The advanced capacitive nano-electromechanical chip third generation unit according to claim 5, characterized in that: The chip length D ranges from 18 microns to 5980 microns.

7. The third generation unit of the advanced capacitor nanoelectromechanical chip according to any one of claims 2 to 6, characterized in that: The 3D structure composed of the diaphragm and the substrate has the following structures: The first type: the 3D structure composed of the diaphragm and the substrate has a circular front projection and a rectangular side projection, and the 3D structure is cylindrical as a whole; the diaphragm support structure has a circular ring shape and a rectangular side projection, and the 3D structure is a circular column shape; The second type: the 3D structure composed of the diaphragm and the substrate has a square shape in the overall frontal projection and a rectangular shape in the side projection, and the 3D structure is in the shape of a square column as a whole; the frontal projection of the diaphragm support structure is a ring shape with a square outside and a circular inside, and the side projection is a rectangle, and the 3D structure is in the shape of a ring column with a square outside and a circular inside; The third type: the 3D structure composed of the diaphragm and the substrate has a regular polygon in its overall frontal projection and a rectangle in its side projection, and the 3D structure is in the shape of a regular polygonal column as a whole; the frontal projection of the diaphragm support structure is a ring with an outer regular polygon and an inner circle, and the side projection is a rectangle, and the 3D structure is in the shape of a ring column with an outer regular polygon and an inner circle; wherein each side of the regular polygon is equal, and the number of sides is greater than 4; The fourth type: the 3D structure composed of the diaphragm and the substrate has an elliptical overall front projection, a rectangular side projection, and an elliptical cylinder overall; the diaphragm support structure has an elliptical ring-shaped front projection, a rectangular side projection, and an elliptical cylinder-shaped 3D structure; The fifth type: the 3D structure composed of the diaphragm and the substrate has an overall frontal projection of a rectangle, a side projection of a rectangle, and the 3D structure as a whole is in the shape of a rectangular column; the frontal projection of the diaphragm support structure is a ring with an outer rectangle and an inner ellipse, and the side projection is a rectangle, and the 3D structure is in the shape of a ring column with an outer rectangle and an inner ellipse.

8. The advanced capacitor nanoelectromechanical chip third generation unit according to claim 1, characterized in that: The substrate includes a first insulating layer, a negative electrode layer / zero electrode layer, a second insulating layer and a structural layer which are arranged in sequence; the first insulating layer is located in the cavity, the negative electrode layer / zero electrode layer is located on a side of the first insulating layer away from the cavity, the second insulating layer is located on a side of the negative electrode layer / zero electrode layer away from the first insulating layer, and the structural layer is located on a side of the second insulating layer away from the negative electrode layer / zero electrode layer.

9. The advanced capacitor nanoelectromechanical chip third generation unit according to claim 8, characterized in that: The material of the substrate is set as follows: The first insulating layer: silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide; The negative electrode layer / zero electrode layer: aluminum, silver, gold, copper, tungsten, platinum, zinc or zinc aluminum; The second insulating layer: silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide; The structural layer: single crystal silicon or polycrystalline silicon; The material of the side pillars is set as follows: silicon dioxide, polycrystalline silicon or single crystal silicon.

10. The advanced capacitor nanoelectromechanical chip third generation unit according to claim 8, characterized in that: The total thickness Z of the first insulating layer, the negative electrode layer / zero electrode layer and the second insulating layer ranges from 1um to 7um, and the thickness proportions from top to bottom are as follows: The thickness of the first insulating layer accounts for 17% to 48% of the total thickness Z; The thickness of the negative electrode layer / zero electrode layer accounts for 2% to 21% of the total thickness Z; The thickness of the second insulating layer accounts for 81% to 31% of the total thickness Z.

11. The advanced capacitor nano-electromechanical chip third generation unit according to claim 8, characterized in that: The thickness of the structural layer ranges from 20um to 300um.

12. The advanced capacitor nanoelectromechanical chip third generation unit according to claim 1, characterized in that: The diaphragm includes a third insulating layer, a positive electrode layer and a fourth insulating layer; the fourth insulating layer is located in the cavity, the positive electrode layer is located on a side of the fourth insulating layer away from the cavity, and the third insulating layer is located on a side of the positive electrode layer away from the fourth insulating layer.

13. The advanced capacitor nanoelectromechanical chip third generation unit according to claim 12, characterized in that: The material setting of the diaphragm is as follows: The third insulating layer: silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide; The positive electrode layer: aluminum, silver, gold, copper, tungsten, platinum, zinc or aluminum zinc; The fourth insulating layer is made of silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide.

14. The advanced capacitor nanoelectromechanical chip third generation unit according to claim 12, characterized in that: The total thickness dimension X of the diaphragm ranges from 0.5um to 4um, and the thickness proportions from top to bottom are as follows: The thickness of the third insulating layer accounts for 17% to 48% of the total thickness X; The thickness of the positive electrode layer accounts for 2% to 21% of the total thickness X; The fourth insulating layer accounts for 81% to 31% of the total thickness X.

15. The advanced capacitor nano-electromechanical chip third generation unit according to claim 1, characterized in that: The distance from the bottom end of the diaphragm to the top end of the substrate in the cavity is the cavity depth C; the range of the cavity depth C is 0.38um~25.8um.

16. The advanced capacitor nano-electromechanical chip third generation unit according to claim 1, characterized in that: The cavity is evacuated and filled with inert gas or high-pressure gas.

17. The advanced capacitor nanoelectromechanical chip third generation unit according to claim 1, characterized in that: The vibration frequency range of the chip unit is 47.2khz~14048khz, and the bandwidth range is 200hz~1000hz.

18. A reverse thrust system, based on the advanced capacitive nano-electromechanical chip third generation unit according to any one of claims 1 to 17, characterized in that: The movement of the diaphragm in the third-generation unit of the advanced capacitor nano-electromechanical chip is used to drive the movement of the dielectric molecules, and the dielectric molecules generate an equal and opposite reaction force on the third-generation unit of the advanced capacitor nano-electromechanical chip; the dielectric molecules include nitrogen molecules and oxygen molecules in the air, or water molecules in water, or particles or molecules in space.

19. The reverse thrust system according to claim 18, characterized in that: Before the chip is packaged, the weight of the third-generation unit of the advanced capacitive nano-electromechanical chip = the volume occupied by the material of each layer × density × gravitational acceleration; thrust = reaction force; thrust-to-weight ratio of the chip unit = thrust / weight of the chip unit.

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