Optical triode system, method of regulating and use thereof

Abstract

The application provides an optical triode system, a regulation method thereof and application. The optical triode system comprises a light source module, a van der Waals material layer, a micro-ring resonant cavity and a photodetector. In view of the bottleneck faced by the development of an electronic transistor, the optical triode system based on the coupling of the van der Waals semiconductor material and the silicon-based micro-ring resonant cavity of the application uses light waves and photons as signal carriers, utilizes the optical linear effect of the van der Waals material and the resonant characteristics of the silicon-based micro-ring resonant cavity, improves the response speed and reduces the energy consumption. Effective amplification and regulation of signal light are realized.

Description

Technical Field

[0001] This invention belongs to the field of information and communication technology, specifically relating to an optical triode system, its control method, and its application. Background Technology

[0002] In the continuous evolution of Information and Communication Technology (ICT), traditional electronic transistors, as key components, have played an irreplaceable role in signal amplification and logic operations, powerfully driving the progress of modern computing and communication systems. However, with the deepening of the digital wave, especially under the urgent demands of cutting-edge fields such as ultra-high-speed broadband communication, large-scale data center construction, and high-performance computing, electronic circuits based on traditional semiconductor materials are gradually approaching the performance limits defined by fundamental physical laws. The migration rate of electron carriers, limited by the nature of materials and quantum effects, has become a key factor restricting the improvement of data processing speed and energy efficiency. Against this backdrop, photonics technology, with its high speed, low loss, high bandwidth, and inherent parallel processing capabilities, is regarded as a key path to break through the bottlenecks of information technology.

[0003] Optical triodes, which use light waves instead of electron flow and photons as the medium, perform signal scaling and modulation. This concept deeply integrates nonlinear optics, laser engineering, and advanced materials science, aiming to develop a new generation of optically controlled devices that can effectively control the intensity and phase of optical signals, playing a crucial role in optical communication, optical computing, and even future quantum information processing. Most currently researched optical triodes rely on second- or third-order nonlinear effects, exhibiting high dependence on light intensity, typically only becoming significant under strong light fields. Furthermore, aspects such as the control of light coherence and stability, the design of efficient optical coupling and conversion mechanisms, and the precise control of nanoscale manufacturing processes all require further optimization.

[0004] Van der Waals materials such as graphene and transition metal dichalcogenides (TMDs) have demonstrated remarkable application potential in silicon photonics and ultrafast optical modulation technologies due to their atomic-level thickness, strong photomatter interaction, broad spectral response, mechanical robustness, and heterogeneous integration capabilities. In research exploring all-optical transistors using van der Waals materials, graphene has consistently attracted attention and is one of the core materials due to its superior electrical and optical properties. However, despite its significant advantages in modulation device fabrication, graphene also has significant limitations: its relatively low light absorption rate may limit the modulation depth, thus affecting signal strength enhancement, becoming a major research challenge. Furthermore, graphene's performance is sensitive to temperature changes, which may lead to reduced stability and reliability under different environmental conditions, further limiting its widespread application. In contrast, TMDs, with their high light absorption rate, tunable optical bandgap, broad spectral response, and excellent light emission efficiency, exhibit more ideal material properties in the field of all-optical transistors, making them a more promising choice. Summary of the Invention

[0005] Therefore, the purpose of this invention is to overcome the defects in the prior art and provide an optical transistor system, its control method and application.

[0006] Before describing the content of this invention, the following terms are defined as follows:

[0007] The term "TMDs" refers to transition metal dichalcogenides.

[0008] To achieve the above objectives, a first aspect of the present invention provides an optical transistor system, the optical transistor system comprising:

[0009] It includes at least a light source module containing a pump light source and a signal light source, a van der Waals material layer, a microring resonator, and a photodetector; wherein:

[0010] In the light source module, the pump light source is used to excite excitons in the van der Waals material and change the overall refractive index of the van der Waals material, and the signal light source is used to emit signal light;

[0011] The van der Waals material layer is used to absorb the excitation light emitted by the pump light source;

[0012] The micro-ring resonant cavity is used to amplify or attenuate optical signals; and

[0013] The photodetector is used to detect and measure the light intensity and / or light power of the signal light output by the signal light source;

[0014] Preferably, the pump light is input to the van der Waals material layer, and the signal light is input to the microring resonant cavity, and after modulation, it is input to the photodetector.

[0015] According to the optical transistor system of the first aspect of the present invention, wherein,

[0016] The signal light output from the signal light source is coupled through the micro-ring resonant cavity and then output. The pump light output from the pump light source irradiates the van der Waals material layer to change the transmission intensity of the output signal light.

[0017] The pump light has a wavelength of 400–800 nm, preferably 450–700 nm, and more preferably 520–660 nm; and / or

[0018] The wavelength of the signal light is 1500-1600nm, preferably 1520-1580nm, and more preferably 1530-1550nm.

[0019] According to the optical transistor system of the first aspect of the present invention, wherein,

[0020] The band gap of the van der Waals material layer is 0 eV to 2 eV, preferably 1 eV to 1.8 eV, more preferably 1.2 eV to 1.6 eV; and / or

[0021] The material of the van der Waals layer is selected from one or more of the following: graphene, TMDs, hexagonal boron nitride, transition metal carbides, preferably selected from one or more of the following: graphene, TMDs, hexagonal boron nitride, more preferably graphene or TMDs;

[0022] Preferably, the TMDs are selected from one or more of the following: molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, tungsten ditelluride, molybdenum ditelluride, tungsten disulfide trioxide, molybdenum trisulfide, tungsten trisulfide; more preferably, selected from one or more of the following: molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, tungsten ditelluride, molybdenum ditelluride; and even more preferably, selected from one or more of the following: molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide.

[0023] According to the optical transistor system of the first aspect of the present invention, the microring resonant cavity comprises: a straight waveguide, a microring waveguide, a substrate, a waveguide layer, a silicon dioxide layer, and a cladding layer; wherein,

[0024] The silicon dioxide layer is located on the substrate, the waveguide layer is located on the silicon dioxide layer, and the cladding layer covers the waveguide layer;

[0025] The straight waveguide and the micro-ring waveguide are located in the waveguide layer; and / or

[0026] The van der Waals material layer partially covers the top of the microring waveguide.

[0027] According to the optical transistor system of the first aspect of the present invention, wherein,

[0028] The width of the waveguide layer is 350–650 nm, preferably 400–600 nm, and more preferably 450–550 nm;

[0029] The height of the waveguide layer is 150–300 nm, preferably 180–260 nm, and more preferably 200–240 nm;

[0030] The microring radius of the microring resonant cavity is 5–20 μm, preferably 6–15 μm, and more preferably 8–12 μm; and / or

[0031] The gap width between the straight waveguide and the micro-ring waveguide is 60–120 nm, preferably 70–110 nm, and more preferably 80–100 nm.

[0032] According to the optical transistor system of the first aspect of the present invention, wherein,

[0033] The materials of the straight waveguide and the micro-ring waveguide are selected from one or more of the following: silicon, silicon nitride, silicon dioxide, preferably silicon or silicon nitride, and most preferably silicon;

[0034] The substrate material is selected from one or more of the following: silicon, germanium, gallium arsenide, indium phosphide, gallium nitride, silicon-germanium, aluminum oxide, silicon nitride, boron nitride, preferably selected from one or more of the following: silicon, gallium arsenide, indium phosphide, silicon nitride, aluminum oxide, and most preferably silicon; and / or

[0035] The material of the coating layer is selected from one or more of the following: silicon dioxide, aluminum oxide, silicon nitride, and boron nitride, preferably silicon dioxide or aluminum oxide, and most preferably silicon dioxide.

[0036] According to the optical transistor system of the first aspect of the present invention, wherein,

[0037] The photodetector is selected from one or more of the following: Si photodetector, GaAs photodetector, InGaAs photodetector, PbS / PbSe photodetector, ZnO photodetector, organic photodetector, graphene photodetector, quantum dot photodetector, preferably selected from one or more of the following: Si photodetector, GaAs photodetector, InGaAs photodetector, PbS / PbSe photodetector, ZnO photodetector, more preferably GaAs photodetector and / or InGaAs photodetector; and / or

[0038] The photodetector is a visible light detector and / or a near-infrared detector;

[0039] Preferably, the wavelength range of the visible light detector is 400–1100 nm, more preferably 400–900 nm, and even more preferably 400–700 nm; and / or

[0040] Preferably, the wavelength range of the near-infrared detector is 800–1800 nm, more preferably 1100–1700 nm, and even more preferably 1300–1650 nm.

[0041] A second aspect of the present invention provides a method for controlling light, the method comprising controlling light using the optical transistor system described in the first aspect;

[0042] Preferably, the method includes: the light source module emitting an optical signal, the optical signal interacting with the van der Waals material layer and the microring resonant cavity to modulate the optical signal.

[0043] According to a second aspect of the present invention, the method further comprises:

[0044] The signal light source and pump light source in the light source module emit signal light and pump light respectively. The signal light is input from one port of the straight waveguide, coupled through the micro-ring resonator, and output from the other port of the straight waveguide. The pump light irradiates the van der Waals material layer to change the dielectric environment of the micro-ring waveguide, thereby changing the transmission intensity of the output signal light.

[0045] The third aspect of the invention provides the application of the optical triode system described in the first aspect in the fabrication of devices for realizing optical switching and / or optical amplification functions.

[0046] According to a preferred embodiment of the present invention, the optical transistor system of the present invention includes:

[0047] Light source module: includes pump light source and signal light source, which are used to excite excitons in van der Waals materials and emit signal light, respectively.

[0048] Van der Waals material layer: mechanically peeled off and transferred onto the microring waveguide, serving as a photosensitive layer capable of generating excitons in response to pump light and altering their charge and polarization states.

[0049] Silicon-based microring resonator: After the signal light propagates in the straight waveguide, it is coupled to the microring resonator, where it interacts with the TMDs material layer to amplify or attenuate the optical signal.

[0050] Photodetector: Used to detect and measure the intensity or power of the output signal light.

[0051] The wavelength of the pump light is 400–800 nm, preferably 450–700 nm, and more preferably 520–660 nm. Generally speaking, the wavelength of the pump light should be determined according to the specific TMDs material used. The exciton effect is optimal when the selected wavelength is close to the band gap of the material.

[0052] Optionally, the optical transistor system of the present invention may further include a control circuit for controlling parameters such as the intensity and frequency of the pump light and processing the electrical signal output by the photodetector.

[0053] The specific connection method of the light source module, van der Waals material layer and microring resonator is as follows: The signal light is input from the signal light source into the straight waveguide of the microring resonator structure. After being modulated by the microring structure, it is connected to a photodetector and a computer at the other end to visualize the modulation result. The van der Waals material layer covers the microring structure of the resonator. Under the illumination of the pump light source, it can generate excitons, which in turn changes the refractive index and plays the role of modulating the signal light. When the pump light shines on the van der Waals material, if a signal generator is connected to the pump light source, different waveforms (such as square waves, sine waves, triangular waves, etc.) can be generated, so as to better observe the ability of the pump light to modulate the signal light.

[0054] Working Principle: An optical triode uses light waves instead of electrons, employing photons as the medium to perform signal amplification and modulation. When pump light irradiates a van der Waals layer, photons interact with electrons in the material, exciting exciton generation. This exciton generation alters the charge distribution and polarization state within the van der Waals material, thus affecting its dielectric function. Simultaneously, the signal light interacts with the van der Waals layer through a silicon-based microring resonant cavity. Due to the change in the dielectric function of the van der Waals layer, the transmission characteristics of the signal light in the resonant cavity are modulated, achieving signal amplification or attenuation. By adjusting the intensity and frequency of the pump light, the generation and annihilation processes of excitons in the van der Waals layer can be precisely controlled, thereby achieving effective modulation of the signal light.

[0055] Implementation method:

[0056] 1. Selection of van der Waals material layers

[0057] This invention designs and fabricates van der Waals material layers with specific band gaps and optical properties. Van der Waals materials include graphene, TMDs, etc., with an extremely wide optical response range, covering from the ultraviolet to terahertz, and even extending to the microwave band. In particular, TMD materials, including molybdenum disulfide, molybdenum diselenide, tungsten disulfide, and tungsten diselenide, have band gaps between 1.0 eV and 2.0 eV, allowing their electrons to be excited by light in the visible and near-infrared bands. Therefore, by selecting pump light of a suitable wavelength based on the material's band gap, the function of an optical transistor can be realized. This invention primarily uses tungsten disulfide, but is not limited to this material; any van der Waals material can be used.

[0058] 2. Design and optimize silicon-based microring resonator

[0059] The structural design of a microring resonator requires comprehensive consideration of several key factors, including the width of the waveguide, the radius of the microring, and the gap width between the straight waveguide and the microring.

[0060] (1) Considering the compatibility of all-optical transistors in silicon-based photonic integrated circuits, the size of silicon waveguides is usually set to 500 nm in width and 220 nm in height, in order to ensure seamless integration with existing integration technologies.

[0061] (2) The radius of the micro-ring is set to 10μm to ensure high-density integration while effectively reducing the loss generated by the waveguide when bending, thereby improving the overall performance.

[0062] (3) Optimization of the gap width between the straight waveguide and the microring. The final determined gap width is 90nm. This design not only meets the accuracy requirements of the manufacturing process, but also significantly improves the coupling efficiency.

[0063] 3. Optical Transistor Structure Design

[0064] The main structure of an optical transistor is as follows:Figure 1 As shown, Figure 1 The system comprises a light source module, a TMDs material layer, and a silicon-based microring resonator, which together constitute the modulation region of the all-optical transistor. These three components, along with a photodetector, form the complete optical transistor system of this invention. The straight waveguide and microring portion are silicon waveguides, and the shaded area on the microring waveguide is covered with van der Waals material. There are two optical signals: a communication beam and a pump beam. The communication beam is input at one port of the straight waveguide, coupled through the microring resonator, and output from the other port. The pump beam illuminates the van der Waals material, altering the dielectric environment of the microring waveguide and thus changing the transmission intensity of the output signal light.

[0065] like Figure 2 The diagram shows a cross-sectional view of the device structure, including a silicon substrate, a silicon dioxide layer on the substrate, a Si waveguide layer on the silicon dioxide layer, and a silicon dioxide cladding layer covering the waveguide layer. The topmost layer is a mechanically dry-transferred van der Waals material (tungsten disulfide in this case).

[0066] Compared with the prior art, the optical transistor system, its control method, and its application of the present invention can have, but are not limited to, the following beneficial effects:

[0067] Addressing the bottlenecks in the development of electronic transistors, this invention presents an optical transistor system based on van der Waals semiconductor materials coupled with a silicon-based microring resonator. By using light waves and photons as signal carriers, and leveraging the optical linearity of van der Waals materials and the resonant characteristics of the silicon-based microring resonator, it improves response speed and reduces energy consumption, achieving effective amplification and control of signal light. Attached Figure Description

[0068] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings, wherein:

[0069] Figure 1 A schematic diagram of a portion of the optical triode system of the present invention is shown.

[0070] Figure 2 A schematic cross-sectional view of the optical triode system of the present invention is shown.

[0071] Figure 3 The transmission spectrum simulation results of the microring resonator of the optical triode system of the present invention are shown.

[0072] Figure 4 An optical microscope image of the microring resonator of the optical triode system of the present invention is shown.

[0073] Figure 5 The transmission spectrum of the microring resonator of the optical triode system of the present invention, in which the van der Waals material layer is tungsten disulfide, is shown.

[0074] Figure 6 The transmission spectrum of the microring resonator of the optical triode system of the present invention, in which the van der Waals material layer is tungsten diselenide, is shown.

[0075] Figure 7 The transmission spectrum of the microring resonator of the optical triode system of the present invention, in which the van der Waals material layer is molybdenum disulfide, is shown.

[0076] Figure 8 The response test of the optical triode system of the present invention is shown.

[0077] Figure 9 A schematic diagram of the optical triode system of the present invention is shown. Detailed Implementation

[0078] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. However, it should be understood that these embodiments are merely for more detailed and specific explanation and should not be construed as limiting the present invention in any way.

[0079] This section provides a general description of the materials and testing methods used in the experiments of this invention. While many of the materials and methods of operation used to achieve the objectives of this invention are well known in the art, the invention is still described in as much detail as possible herein. It will be apparent to those skilled in the art that, unless otherwise stated in the context, the materials and methods of operation used in this invention are well known in the art.

[0080] Example 1

[0081] This embodiment is an exemplary description of the optical triode system of the present invention.

[0082] like Figure 9 As shown, the optical transistor system of the present invention includes:

[0083] Light source module: includes pump light source and signal light source, which are used to excite excitons in van der Waals materials and transmit signal light to be processed, respectively.

[0084] Van der Waals material layer: mechanically peeled off and transferred onto the microring waveguide, serving as a photosensitive layer capable of generating excitons in response to pump light and altering their charge and polarization states.

[0085] Silicon-based microring resonator: After the signal light propagates in the straight waveguide, it is coupled to the microring resonator, where it interacts with the TMDs material layer to amplify or attenuate the optical signal.

[0086] Photodetector: Used to detect and measure the intensity or power of the output signal light.

[0087] The signal light is input from the signal source into the straight waveguide of the microring resonant cavity structure. After being modulated by the microring structure, it is connected to a photodetector and a computer at the other end to visualize the modulation result. The van der Waals material layer covers the microring structure of the resonant cavity. Under the illumination of the pump source, it can generate excitons, which in turn changes the refractive index and modulates the signal light. When the pump light shines on the van der Waals material, if a signal generator is connected to the pump source, different waveforms (such as square waves, sine waves, triangular waves, etc.) can be generated, so as to better observe the ability of the pump light to modulate the signal light.

[0088] The fabrication method of an optical transistor system includes the following steps:

[0089] 1) Selection of van der Waals material layers

[0090] Van der Waals material layers with specific band gaps and optical properties are selected and prepared. Van der Waals materials include graphene, TMDs, etc., with an extremely wide optical response range, covering from ultraviolet to terahertz, and even extending to the microwave band. In particular, TMD materials, including molybdenum disulfide, molybdenum diselenide, tungsten disulfide, and tungsten diselenide, have band gaps between 1.0 eV and 2.0 eV, allowing their electrons to be excited by light in the visible and near-infrared bands. Therefore, pump light of suitable wavelengths can be selected according to the material's band gap to realize the function of an optical transistor. In this embodiment, tungsten disulfide is used as an example of van der Waals material, but it is not limited to this material; other van der Waals materials can be used. In this embodiment, the pump light wavelength is 520 nm, and the signal light wavelength is 1540-1545 nm.

[0091] 2) Fabrication and optimization of silicon-based microring resonators

[0092] like Figure 2 As shown, the microring resonant cavity includes: a straight waveguide, a microring waveguide, a substrate, a waveguide layer, a silicon dioxide layer, and a cladding layer; wherein,

[0093] A silicon dioxide layer is located on the substrate, a waveguide layer is located on the silicon dioxide layer, and a cladding layer covers the waveguide layer; straight waveguides and micro-ring waveguides are located on the waveguide layer; above the micro-ring waveguides, a mechanically dry-transferred van der Waals material (tungsten disulfide) is applied. The materials of the straight waveguides and micro-ring waveguides are silicon, the substrate is silicon, and the cladding layer is silicon dioxide.

[0094] The structure of a microring resonator needs to take into account several key factors, including the width of the waveguide layer, the radius of the microring waveguide, and the gap width between the straight waveguide and the microring waveguide.

[0095] (1) Considering the compatibility of all-optical transistors in silicon-based photonic integrated circuits, the size of the silicon waveguide layer in this embodiment is set to a width of 400nm and a height of 220nm, in order to ensure seamless integration with existing integration technologies.

[0096] (2) In this embodiment, the radius of the micro-ring waveguide is set to 10μm, which ensures high-density integration while effectively reducing the loss generated when the waveguide is bent, thereby improving the overall performance.

[0097] (3) Optimization of the gap width between the straight waveguide and the micro-ring waveguide. The final gap width determined in this embodiment is 90nm, which not only meets the accuracy requirements of the fabrication process, but also significantly improves the coupling efficiency.

[0098] 3) Structure of optical transistors

[0099] The main structure of an optical transistor is as follows: Figure 9 As shown, Figure 9 The system includes a light source module, a van der Waals material layer, and a silicon-based microring resonator, which together constitute the modulation region of the all-optical transistor. These three components, along with a photodetector, form the complete optical transistor system of this invention. In this embodiment, the photodetector is exemplified by a visible light detector for receiving the pump light signal and a near-infrared detector for receiving the output signal light. The straight waveguide and microring waveguide are exemplified by a silicon waveguide, with the shaded area on the microring waveguide being the covering van der Waals material. There are two optical signals: a signal light and a pump light. The signal light is input from one port of the straight waveguide, coupled through the microring resonator, and output from the other port of the straight waveguide. The pump light irradiates the van der Waals material, altering the dielectric environment of the microring waveguide and thus changing the transmission intensity of the output signal light.

[0100] Examples 2-4

[0101] This embodiment is another exemplary description of the optical transistor system of the present invention.

[0102] The optical transistor systems in Examples 2 to 4 are the same as those in Example 1, except for the conditions listed in Table 1.

[0103] Table 1 Optical triode systems in Examples 2-4

[0104]

[0105]

[0106] Example 5

[0107] This embodiment illustrates the simulation results of the transmission spectrum of the microring resonator of the optical triode system of the present invention.

[0108] To demonstrate that changing the refractive index of van der Waals materials can effectively modulate the transmission characteristics of signal light in a resonant cavity, a composite microring resonant cavity was constructed with tungsten sulfide as the van der Waals material layer, a waveguide layer with a width of 400 nm and a height of 220 nm, a microring radius of 10 μm, and a gap of 90 nm between the microring and the straight waveguide. The transmission spectrum analysis of the designed silicon-based microring resonant cavity was performed using Lumerical software.

[0109] like Figure 3 As shown, the transmission spectra of the van der Waals material before and after changing its refractive index at the center wavelength of the resonance peak are illustrated. When the refractive index of the van der Waals material remains constant (i.e., without pump light), the resonant wavelength of the microring is 1544.2 nm. When the inventors changed the refractive index of the van der Waals material from 4 to 4.1, the resonant wavelength of the microring redshifted to 1544.6 nm, a shift of approximately 0.4 nm. This demonstrates that changing the refractive index of the van der Waals material can effectively alter the transmission characteristics of signal light in the resonant cavity.

[0110] Example 6

[0111] This embodiment illustrates the test results of the microring resonator of the optical triode system of the present invention.

[0112] The van der Waals material-silicon waveguide composite microring resonators of Examples 1-4 were fabricated using micro-nano fabrication techniques. The optical microscope image of the device in Example 1 is shown below. Figure 4 As shown. The device was subjected to light transmission testing. The input signal light wavelength was 1535nm-1550nm and the optical power was 10mW; the pump excitation light wavelength was 520nm and the optical power was 0.5mW. Figures 5-7 The diagram shows the changes in the signal light transmission spectrum of the device before and after the pump light is switched on.

[0113] Table 2 shows the test results of the microring resonator in Examples 2-4.

[0114]

[0115]

[0116] As shown in Table 2, Figure 4 , Figures 5-7 As shown, when the pump light is applied to the two-dimensional material, the corresponding resonance peaks will shift by a certain order of magnitude, indicating that the micro-ring resonators of the optical triode systems prepared in Examples 1 to 4 can all achieve the effect of all-optical modulation, that is, the state of the signal light is controlled by an external pump beam.

[0117] Example 7

[0118] This embodiment illustrates the amplification and attenuation effects of the optical transistor system of the present invention.

[0119] This embodiment uses the optical transistor system of Embodiments 1 to 4.

[0120] For the optical transistor system of Example 1, when the pump light is off, the resonant wavelength of the microring is 1538.98 nm, the full width at half maximum (FWHM) is 0.41 nm, and the corresponding bandwidth is 56 GHz. The signal light intensity in the range of 1538.77 nm to 1539.19 nm will attenuate to less than half of its normal value. When the pump light is on, the resonant wavelength of the microring changes from 1538.98 nm to 1539.14 nm, resulting in a 0.16 nm redshift. At this time, the input signal light intensity in the range of 1538.93-1539.35 nm will attenuate to less than half of its normal value. Therefore, when the input signal light wavelength is 1538.77–1538.93 nm, it can be amplified under pump light illumination; while when the input signal light wavelength is 1539.19–1539.35 nm, it can be attenuated under pump light illumination; these two ranges enable continuous modulation of the signal light. In particular, when the input signal light wavelength is 1538.77–1538.93 nm, signal light amplification can be achieved.

[0121] Table 3 shows the magnification effect of the optical transistor systems in Examples 2-4.

[0122] Example signal light wavelength Pump excitation wavelength Light magnification 2 1533nm 660nm 1550.8-1551.6 3 1540nm 660nm 1544.2-1544.8 4 1542nm 520nm 1543.5-1544.2

[0123] As shown in Table 3, when pump light is applied, the optical transistors prepared by the above materials all have their corresponding signal light bands that can achieve optical amplification, indicating that the micro-ring resonators of the optical transistor systems prepared in Examples 1 to 4 can all achieve signal amplification.

[0124] Example 8

[0125] This embodiment illustrates the effect of the optical transistor system of the present invention.

[0126] This embodiment uses the optical transistor system from Embodiments 1 to 4. When the wavelength of the input signal light is at the resonant wavelength of 1538.98 nm, the device can perform the function of an optical switch.

[0127] Specifically, for the optical transistor system of Example 1, by Figure 5As shown, when the pump light is turned on, the resonant peak changes from 1538.98 nm to 1539.14 nm, a redshift of 0.16 nm. Simultaneously, with the pump light off, the transmittance at 1539 nm is 37%; with the pump light on, the transmittance at 1539 nm is 22%, and the extinction ratio is close to 2 dB. In summary, these two states can be defined as the on and off states of the micro-ring optical switch, respectively.

[0128] In this embodiment, pump light with a wavelength of 520nm, a power of 0.5mW, and a frequency of 1kHz was used to test the switching function of the device. The results are as follows: Figure 6 and 7 As shown (optical triode systems of Examples 2 and 3). The results show that there is no delay in the response of the signal light. Considering the ultrafast optical response and carrier relaxation time of two-dimensional van der Waals materials in the range of several picoseconds, under ideal conditions, all-optical modulators based on two-dimensional van der Waals materials could potentially achieve GHz-speed modulation.

[0129] Table 4 shows the response speed of the optical triode systems in Examples 2-4.

[0130] Example signal light wavelength Pump excitation wavelength frequency result 2 1533nm 660nm 1KHz No delay 3 1540nm 660nm 1KHz No delay 4 1542nm 520nm 1KHz No delay

[0131] As shown in Table 4 and Figure 5 As shown, the optical transistors prepared using the above materials do not exhibit any delay in response under the modulation of 1kHz pump light, indicating that the microring resonators of the optical transistor systems prepared in Examples 1 to 4 can all achieve normal operation at a 1kHz modulation frequency.

[0132] While the effects of some embodiments have been shown above, those skilled in the art should understand that, based on the concept of the invention, other embodiments not specifically shown or other technical solutions of the invention not shown in the embodiments can also achieve the same technical effects as those claimed in the summary section:

[0133] Addressing the bottlenecks in the development of electronic transistors, this invention presents an optical transistor system based on van der Waals semiconductor materials coupled with a silicon-based microring resonator. By using light waves and photons as signal carriers, and leveraging the optical linearity of van der Waals materials and the resonant characteristics of the silicon-based microring resonator, it improves response speed and reduces energy consumption, achieving effective amplification and control of signal light.

[0134] Although the invention has been described to a certain extent, it is apparent that appropriate variations can be made to the various conditions without departing from the spirit and scope of the invention. It is understood that the invention is not limited to the described embodiments, but falls within the scope of the claims, which include equivalent substitutions for each of the elements.

Claims

1. An optical triode system, characterized by, The optical triode system comprises: a light source module comprising at least a pump light source and a signal light source, a van der Waals material layer, a micro-ring resonant cavity and a photodetector; wherein: in the light source module, the pump light source is used to excite excitons in the van der Waals material and change the refractive index of the whole van der Waals material, and the signal light source is used to emit signal light; the van der Waals material layer is used to absorb the excitation light emitted by the pump light source; the micro-ring resonant cavity is used to realize amplification or attenuation of the optical signal; and the photodetector is used to detect and measure the optical intensity and / or optical power of the signal light output by the signal light source; and the pump light is input onto the van der Waals material layer, and the signal light is input into the micro-ring resonant cavity and then input into the photodetector after modulation; the signal light output by the signal light source is output after coupling through the micro-ring resonant cavity, and the pump light output by the pump light source is irradiated on the van der Waals material layer to change the transmission intensity of the output signal light; the wavelength of the pump light is 400-800 nm, and the wavelength of the signal light is 1500-1600 nm.

2. The optical triode system according to claim 1, wherein: the wavelength of the pump light is 450-700 nm; and / or the wavelength of the signal light is 1520-1580 nm.

3. The optical triode system according to claim 2, wherein: the wavelength of the pump light is 520-660 nm; and / or the wavelength of the signal light is 1530-1550 nm.

4. The optical triode system according to any one of claims 1 to 3, wherein: the band gap of the material of the van der Waals material layer is 0 eV-2 eV; and / or the material of the van der Waals material layer is selected from one or more of the following: graphene, TMDs, hexagonal boron nitride, and over-metal carbide.

5. The optical triode system according to claim 4, wherein: the band gap of the material of the van der Waals material layer is 1 eV-1.8 eV; and / or the material of the van der Waals material layer is selected from one or more of the following: graphene, TMDs, and hexagonal boron nitride.

6. The optical triode system according to claim 5, wherein: the band gap of the material of the van der Waals material layer is 1.2 eV-1.6 eV; and / or the material of the van der Waals material layer is graphene or TMDs.

7. The optical triode system of claim 6, wherein, the material of the van der Waals material layer is TMDs selected from one or more of the following: molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, tungsten ditelluride, and molybdenum ditelluride.

8. The optical triode system of claim 7, wherein, the material of the van der Waals material layer is TMDs selected from one or more of the following: molybdenum disulfide, molybdenum diselenide, tungsten disulfide, and tungsten diselenide.

9. The optical triode system of claim 8, wherein, the material of the van der Waals material layer is TMDs selected from one or more of the following: molybdenum disulfide, molybdenum diselenide, tungsten disulfide.

10. The optical triode system of any one of claims 1 to 3, wherein, the micro-ring resonant cavity comprises: a straight waveguide, a micro-ring waveguide, a substrate, a waveguide layer, a silicon dioxide layer, and a cladding layer; wherein, The silicon dioxide layer is on the substrate, and the waveguide layer is on the silicon dioxide layer, and the cladding layer covers the waveguide layer; The straight waveguide and the micro-ring waveguide are in the waveguide layer; and / or The micro-ring waveguide is partially covered by the van der Waals material layer.

11. The optical triode system of claim 10, wherein: The width of the waveguide layer is 350-650 nm; The height of the waveguide layer is 150-300 nm; The micro-ring radius of the micro-ring resonator is 5-20 pm; and / or The gap width between the straight waveguide and the micro-ring waveguide is 60-120 nm.

12. The optical triode system of claim 11, wherein: The width of the waveguide layer is 400-600 nm; The height of the waveguide layer is 200-240 nm; The micro-ring radius of the micro-ring resonator is 8-12 pm; and / or The gap width between the straight waveguide and the micro-ring waveguide is 80-100 nm.

13. The optical triode system of claim 12, wherein: The width of the waveguide layer is 450-550 nm; The height of the waveguide layer is 200-240 nm; The micro-ring radius of the micro-ring resonator is 8-12 pm; and / or The gap width between the straight waveguide and the micro-ring waveguide is 80-100 nm.

14. The optical triode system of claim 10, wherein: The material of the straight waveguide and the micro-ring waveguide is selected from one or more of: silicon, silicon nitride, silicon dioxide; The material of the substrate is selected from one or more of: silicon, germanium, gallium arsenide, indium phosphide, gallium nitride, silicon germanium, aluminum oxide, silicon nitride, boron nitride; and / or The material of the cladding layer is selected from one or more of: silicon dioxide, aluminum oxide, silicon nitride, boron nitride.

15. The optical triode system of claim 14, wherein: The material of the straight waveguide and the micro-ring waveguide is silicon or silicon nitride; The material of the substrate is selected from one or more of: silicon, gallium arsenide, indium phosphide, silicon nitride, aluminum oxide; and / or The material of the cladding layer is silicon dioxide or aluminum oxide.

16. The optical triode system of claim 15, wherein: The material of the straight waveguide and the micro-ring waveguide is silicon; The material of the substrate is silicon; and / or The material of the cladding layer is silicon dioxide.

17. The optical triode system of any one of claims 1-3, wherein: The photodetector is selected from one or more of: a Si photodetector, a GaAs photodetector, an InGaAs photodetector, a PbS / PbSe photodetector, a ZnO photodetector, an organic photodetector, a graphene photodetector, a quantum dot photodetector; and / or The photodetector is a visible light detector and / or a near-infrared detector.

18. The optical triode system of claim 17, wherein: The wavelength range of the visible light detector is 400-1100 nm; and / or The wavelength range of the near-infrared detector is 800-1800 nm.

19. The optical triode system of claim 18, wherein: The wavelength range of the visible light detector is 400-900 nm; and / or The wavelength range of the near-infrared detector is 1100-1700 nm.

20. The optical triode system of claim 19, wherein: The wavelength range of the visible light detector is 400-700 nm; and / or The wavelength range of the near-infrared detector is 1300-1650 nm.

21. The optical triode system of claim 17, wherein, The photodetector is selected from one or more of: a Si photodetector, a GaAs photodetector, an InGaAs photodetector, a PbS / PbSe photodetector, a ZnO photodetector.

22. The optical triode system of claim 21, wherein, The photodetector is a GaAs photodetector and / or an InGaAs photodetector.

23. A method of modulating light, the method comprising: The method comprises regulating light using the optical triode system of any one of claims 1-22.

24. The method of claim 23, wherein, The method comprises: the light source module emits a light signal, and the light signal interacts with the van der Waals material layer and the micro-ring resonant cavity to regulate the light signal.

25. A method of modulating light, the method comprising: The method comprises regulating light using the optical triode system of claim 10, and the method comprises: The signal light source and the pump light source in the light source module respectively emit signal light and pump light, the signal light is input by a port at one end of the straight waveguide, coupled through the micro-ring resonant cavity, and output from a port at the other end of the straight waveguide; the pump light is irradiated on the van der Waals material layer to change the dielectric environment of the micro-ring waveguide, thereby changing the transmission intensity of the output signal light.

26. Use of the optical triode system of any one of claims 1-22 in the preparation of a device for realizing an optical switch function and / or an optical amplification function.

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