Package structure and method of forming the same

Abstract

A packaging structure and a forming method thereof, wherein the packaging structure comprises: a chip structure; an electrical interconnection layer electrically connected with the chip structure; a plurality of bonding bumps electrically connected with the electrical interconnection layer; a bonding frame; a driving substrate having a first liquid channel therein, and being bonded with the bonding bumps and the bonding frame respectively, the bonding frame being communicated with the first liquid channel; an inlet pipe and an outlet pipe being communicated with an inlet and an outlet respectively; and an underfill adhesive used for bonding and fixing the inlet pipe and the outlet pipe with the driving substrate. The inlet pipe and the outlet pipe can provide a convenient docking mode, and are bonded and fixed by the underfill adhesive to meet the sealing reliability requirements for long-term use. The complete liquid channel structure formation and the fixed connection of the inlet pipe and the outlet pipe meet the requirements of the existing packaging process, and mass production can be realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a packaging structure and a forming method thereof. BACKGROUND

[0002] The packaging process of integrated circuit is an essential step in the process of transforming integrated circuit chip into practical electronic product, which plays the role of electronic module interconnection, mechanical support, protection, etc., and can significantly improve the reliability of the chip. For the packaging system of high-performance integrated circuit, flip-chip packaging has become the mainstream method of high-density integrated circuit packaging; at the same time, the emergence of three-dimensional packaging also provides the possibility for higher-density electronic packaging.

[0003] However, the packaging structure in the prior art still has many problems. SUMMARY

[0004] The technical problem solved by the present application is to provide a packaging structure and a forming method thereof, so that the sealing property can meet the long-term use reliability requirement and the requirement of matching the existing packaging process, and mass production is realized.

[0005] To solve the above problems, the present application provides a packaging structure, comprising: a chip structure; an electrical interconnection layer, which is located on the surface of the chip structure and forms an electrical connection with the chip structure; a plurality of bonding bumps, which are located on the electrical interconnection layer and are electrically connected with the electrical interconnection layer, and form an electrical connection with the chip structure through the electrical interconnection layer; a bonding frame, which is located on the electrical interconnection layer; a driving substrate, which has a first liquid channel inside, and the surface of the driving substrate exposes the liquid inlet and liquid outlet of the first liquid channel, and the driving substrate is bonded to the bonding bumps and the bonding frame respectively, and the bonding frame is in communication with the first liquid channel; a liquid inlet pipe, which is in communication with the liquid inlet; a liquid outlet pipe, which is in communication with the liquid outlet; and an underfill adhesive, which is used to bond and fix the liquid inlet pipe and the driving substrate, and the liquid outlet pipe and the driving substrate.

[0006] Optionally, the chip structure and the driving substrate are bonded to form a second liquid channel, and the second liquid channel and the first liquid channel in the driving substrate are in communication through the bonding frame.

[0007] Optionally, it further comprises a reinforcing ring, which is located on the driving substrate and surrounds the chip structure, the electrical interconnection layer, the bonding bumps and the bonding frame.

[0008] Optionally, the liquid inlet pipe and the liquid outlet pipe are fixedly connected with the driving substrate through the reinforcing ring.

[0009] Optionally, the package layer is located on the chip structure and the driving substrate and covers the chip structure, the electrical interconnection layer, the bonding bump, the bonding frame, and part of the driving substrate.

[0010] Optionally, the electrical interconnection layer comprises a plurality of pads, the pads are electrically connected with the chip structure, and the bonding bump is electrically connected with the corresponding pad.

[0011] Optionally, the material of the liquid inlet pipe comprises a metal material, the material of the liquid outlet pipe comprises a metal material, and the metal material comprises carbon steel, copper, stainless steel, aluminum alloy, or titanium.

[0012] Correspondingly, the application also provides a forming method of the package structure, comprising the following steps: providing a chip structure; forming an electrical interconnection layer on the surface of the chip structure, the electrical interconnection layer being electrically connected with the chip structure; forming a plurality of bonding bumps and a bonding frame on the electrical interconnection layer, the bonding bumps being electrically connected with the electrical interconnection layer, and the bonding bumps being electrically connected with the chip structure through the electrical interconnection layer; providing a driving substrate, the driving substrate having a first liquid channel therein, and the surface of the driving substrate exposing an inlet and an outlet of the first liquid channel; bonding the driving substrate with the bonding bump and the bonding frame respectively, the bonding frame being in communication with the first liquid channel; providing a liquid inlet pipe and a liquid outlet pipe; and bonding and fixing the liquid inlet pipe and the driving substrate and the liquid outlet pipe and the driving substrate based on an underfill adhesive, the liquid inlet pipe being in communication with the inlet after bonding and fixing, and the liquid outlet pipe being in communication with the outlet after bonding and fixing.

[0013] Optionally, the chip structure is flipped and bonded with the driving substrate, a second liquid channel is formed between the chip structure and the driving substrate after bonding, and the second liquid channel and the first liquid channel in the driving substrate are in communication through the bonding frame.

[0014] Optionally, before the liquid inlet pipe and the liquid outlet pipe are bonded and fixed, the method further comprises bonding a reinforcing ring on the driving substrate, the reinforcing ring surrounding the chip structure, the electrical interconnection layer, the bonding bump, and the bonding frame.

[0015] Optionally, before the reinforcing ring is bonded on the driving substrate, the method further comprises opening processing the reinforcing ring, and the liquid inlet pipe and the liquid outlet pipe are fixedly connected with the driving substrate through the reinforcing ring.

[0016] Optionally, before the liquid inlet pipe and the liquid outlet pipe are fixedly bonded, the method further comprises: forming an encapsulation layer covering the chip structure, the electrical interconnection layer, the bonding bump, the bonding frame, and part of the driving substrate.

[0017] Optionally, the electrical interconnection layer comprises: a plurality of pads, the pads being electrically connected to the chip structure, and the bonding bump being electrically connected to the corresponding pad.

[0018] Optionally, the bonding bump and the bonding frame are synchronously formed.

[0019] Optionally, the method for forming the bonding bump and the bonding frame comprises: forming a photoresist layer on the electrical interconnection layer, the photoresist layer having a plurality of patterned openings; forming the bonding bump and the bonding frame in the corresponding patterned openings; and removing the photoresist layer after the bonding bump and the bonding frame are formed.

[0020] Optionally, the bonding bump and the bonding frame are formed in the corresponding patterned openings by using an electroplating process.

[0021] Compared with the prior art, the technical scheme of the present application has the following advantages:

[0022] In the encapsulation structure of the present application, the second liquid flow channel formed between the chip structure and the driving substrate after the two are bonded is in communication with the first liquid flow channel in the driving substrate through the bonding frame, so as to form a complete liquid flow channel structure. The liquid inlet pipe and the liquid outlet pipe are in communication with the liquid inlet and the liquid outlet of the driving substrate, respectively, so as to provide a convenient docking mode. Moreover, the liquid inlet pipe and the driving substrate, and the liquid outlet pipe and the driving substrate are fixedly bonded by the underfilling glue, so as to meet the sealing reliability requirements for long-term use. The complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe can meet the requirements of the existing encapsulation process, and thus mass production can be realized. The cooling liquid is circulated through the second liquid flow channel, so as to cool the chip structure from below. In addition, the circulation of the cooling liquid also flows through the first liquid flow channel in the driving substrate, so as to cool the driving substrate.

[0023] Further, the method further comprises: a reinforcing ring, the reinforcing ring being located on the driving substrate, and the reinforcing ring surrounding the chip structure, the electrical interconnection layer, the bonding bump, and the bonding frame. The reinforcing ring can increase the overall mechanical strength of the encapsulation structure, and can also inhibit the warping phenomenon that occurs during encapsulation.

[0024] Further, the liquid inlet pipe and the liquid outlet pipe are fixedly connected with the driving substrate through the reinforcing ring. By penetrating the liquid inlet pipe and the liquid outlet pipe through the reinforcing ring, the reinforcing ring can provide more stable limiting for the liquid inlet pipe and the liquid outlet pipe, thereby effectively reducing the problem of liquid leakage caused by loosening of the bonding position of the liquid inlet pipe and the liquid outlet pipe with the driving substrate.

[0025] In the forming method of the packaging structure, the chip structure is flipped and bonded with the driving substrate, and a second liquid flow channel is formed between the bonded chip structure and the driving substrate, which is communicated with the first liquid flow channel in the driving substrate through the bonding frame to form a complete liquid flow channel structure. The liquid inlet pipe and the liquid outlet pipe are respectively communicated with the liquid inlet and the liquid outlet of the driving substrate to provide a convenient docking mode. Moreover, the liquid inlet pipe and the driving substrate, and the liquid outlet pipe and the driving substrate are bonded and fixed by the underfill adhesive to meet the sealing reliability requirement for long-term use. The complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe can meet the requirement of the existing packaging process, thereby realizing mass production. The cooling liquid is circulated through the second liquid flow channel, which can cool the chip structure from below. In addition, the circulation of the cooling liquid also flows through the first liquid flow channel in the driving substrate, which can also cool the driving substrate.

[0026] Further, before bonding and fixing the liquid inlet pipe and the liquid outlet pipe, the method further comprises: bonding a reinforcing ring on the driving substrate, and the reinforcing ring surrounds the chip structure, the electrical interconnection layer, the bonding bump and the bonding frame. The reinforcing ring can increase the overall mechanical strength of the packaging structure, and can also inhibit the warping phenomenon during packaging.

[0027] Further, before bonding the reinforcing ring on the driving substrate, the method further comprises: opening the reinforcing ring; and the liquid inlet pipe and the liquid outlet pipe are fixedly connected with the driving substrate through the reinforcing ring. By penetrating the liquid inlet pipe and the liquid outlet pipe through the reinforcing ring, the reinforcing ring can provide more stable limiting for the liquid inlet pipe and the liquid outlet pipe, thereby effectively reducing the problem of liquid leakage caused by loosening of the bonding position of the liquid inlet pipe and the liquid outlet pipe with the driving substrate. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figures 1 to 11 is a structural schematic diagram of each step of the forming method of the packaging structure in the embodiment of the application. DETAILED DESCRIPTION

[0029] For the purpose of understanding the disclosure, the exemplary embodiments disclosed herein will be described in greater detail below with reference to the accompanying drawings. While exemplary embodiments of the disclosure are illustrated, it is to be understood that the disclosure is not limited to the precise forms described herein and that changes can be made thereunto without departing from the scope of the disclosure. Rather, the embodiments are provided as examples of implementing the disclosure and to convey the scope of the disclosure to those skilled in the art.

[0030] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the disclosure. However, it will be apparent to one skilled in the art that the disclosure can be practiced without one or more of these specific details. In some embodiments, well-known features, techniques, procedures and structures have not been described in detail in order to avoid obscuring the disclosure. In some embodiments, in order not to obscure the disclosure, some features of the actual implementation can not be described here in detail, and the well-known functions and structures are not described in detail.

[0031] Generally, the terminology can be understood at least in part from a context of a specific use of the terminology. For example, the terminology "one or more", as used herein with respect to any feature, structure, or characteristic, can be used in either a singular sense or in a plural sense, depending at least in part on a context in which the terminology is used. Similarly, terminology such as "a" or "the" can also be understood, at least in part, depending at least in part on a context, as transmitting a singular usage or transmitting a plural usage. Additionally, "based on" can be understood as not necessarily intended to convey an exclusive set of factors, and can instead allow for additional factors not necessarily explicitly described, again at least in part depending on a context.

[0032] Unless otherwise defined, the terms used herein are for the purpose of describing the specific embodiments and are not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0033] For a thorough understanding of the disclosure, detailed steps and detailed structures will be set forth in the following description below with reference to the following drawings. The preferred embodiments of the disclosure are described in detail below, however, the disclosure can have other embodiments in addition to those described.

[0034] As described in the background, the packaging structure in the prior art still has many problems. The following will be specifically described with reference to the drawings.

[0035] With the increasing integration of chips, the heat generated also increases, and the traditional air cooling method has been difficult to meet the demand of efficient heat dissipation. Therefore, the micro-channel liquid cooling heat dissipation technology emerges as the times require. This heat dissipation technology uses liquid (usually water or special cooling liquid) to flow through the micro-channel on the surface of the chip to take away the heat. With the development of chip stacking technology, the number of stacked layers of the chip structure is increasing, and the heat under the chip structure is more and more difficult to dissipate from the surface of the chip structure. The silicon-based flow channel bonding scheme is usually suitable for top inlet and outlet liquid structure and cannot dissipate heat from the bottom of the chip structure.

[0036] At the same time, the inlet and outlet pipes and the inlet and outlet of the micro-channel are temporarily sealed by adhesion or rubber gasket, which cannot meet the long-term use reliability requirement, and cannot match the existing packaging process requirement, and cannot be mass produced.

[0037] On this basis, the application provides a packaging structure and a forming method thereof. The driving substrate has a first liquid flow channel 4011 therein, the driving substrate is bonded with the chip structure to form a second liquid flow channel, the first liquid flow channel and the second liquid flow channel are communicated through the bonding frame to form a complete liquid flow channel structure. The liquid inlet pipe and the liquid outlet pipe are respectively communicated with the liquid inlet port and the liquid outlet port of the driving substrate to provide a convenient docking mode. Moreover, the liquid inlet pipe and the driving substrate, and the liquid outlet pipe and the driving substrate are fixedly bonded by the underfill adhesive to meet the sealing reliability requirement of long-term use. The complete liquid flow channel structure forming and the fixed connection of the liquid inlet pipe and the liquid outlet pipe can match the existing packaging process requirement, and thus mass production can be realized. The cooling liquid is circulated through the second liquid flow channel to dissipate heat from the bottom of the chip structure, and the circulation of the cooling liquid also flows through the first liquid flow channel in the driving substrate to dissipate heat for the driving substrate.

[0038] In order to make the above-mentioned purposes, features and advantages of the application more obvious and easy to understand, the specific embodiments of the application will be described in detail below with reference to the drawings.

[0039] Figures 1 to 11 is a structural schematic diagram of each step of the forming method of the packaging structure in the embodiment of the application.

[0040] In the embodiments of the present application, the steps of the forming method of the packaging structure can be processes implemented on a wafer, on a single-layer chip, or on a multi-layer stacked chip. In a preferred embodiment, the steps of the forming method of the packaging structure are processes implemented on a multi-layer stacked chip.

[0041] Referring to Figure 1 , a wafer (not shown) is provided, and the wafer is provided with a plurality of chip structures 100.

[0042] In this embodiment, the chip structure 100 is a multi-layer stacked chip, which includes one logic chip 101 and four memory chips 102 (e.g., DRAM1, DRAM2, DRAM3, and DRAM4), and the five chips are stacked in sequence and supported by a support substrate 103.

[0043] In other embodiments, the chip structure can include more than or less than five chips, and the types of the chips can be flexibly selected based on actual needs.

[0044] Referring to Figure 2 , an electrical interconnection layer is formed on the surface of the chip structure 100 away from the support substrate 103, and the electrical interconnection layer is electrically connected to the chip structure 100.

[0045] In this embodiment, the step of forming the electrical interconnection layer includes forming a plurality of pads 201 on the chip structure 100, and the pads 201 are electrically connected to the chip structure 100.

[0046] In this embodiment, the step of forming the electrical interconnection layer further includes forming a dielectric layer 202 on the chip structure 100, the dielectric layer 202 is located on the surface of the chip structure 100 and covers the pads 201; forming a passivation layer 203 on the dielectric layer 202; and forming a buffer layer 204 on the passivation layer 203; wherein the dielectric layer 302, the passivation layer 203, and the buffer layer 204 expose part of the surface of the pads 201.

[0047] In this embodiment, the pads 201 are formed by first depositing a material layer (not shown) to form the pads 201, and then performing a pattern etching process on the material layer to form the pads 201; and the dielectric layer 202, the passivation layer 203, and the buffer layer 204 are also formed by first depositing a corresponding material layer (not shown) to form the dielectric layer 202, the passivation layer 203, and the buffer layer 204, and then performing a pattern etching process on the material layer to form the dielectric layer 202, the passivation layer 203, and the buffer layer 204.

[0048] In this embodiment, the materials of the dielectric layer 202, the passivation layer 203 and the buffer layer 204 are all insulating materials, wherein the material of the dielectric layer 202 can be silicon oxide, the material of the passivation layer 203 can be silicon nitride, and the material of the buffer layer 204 can be polyimide.

[0049] In this embodiment, after the formation of the electrical interconnection layer, a plurality of bonding bumps and a bonding frame are formed on the surface of the electrical interconnection layer, the bonding bumps are electrically connected with the electrical interconnection layer, and the bonding bumps are electrically connected with the chip structure 100 through the electrical interconnection layer. For details of the formation process, please refer to Figures 3 to 7 .

[0050] Please refer to Figure 3 , an adhesion layer 301 and a seed layer 302 on the adhesion layer 301 are formed on the surface of the chip structure 100.

[0051] In this embodiment, the adhesion layer 301 is formed on the surfaces of the exposed pads 201, the dielectric layer 202, the passivation layer 203 and the buffer layer 204 by a sputtering process or other metal deposition process.

[0052] In this embodiment, the material of the adhesion layer 301 can be titanium or titanium tungsten.

[0053] In this embodiment, the seed layer 302 is formed on the adhesion layer 301 by a sputtering process.

[0054] In this embodiment, the material of the seed layer 302 is copper.

[0055] It should be noted that in this embodiment, the adhesion layer 301 and the seed layer 302 are the prepared under bump metallization (UBM) before the formation of the bonding bumps and the bonding frame. The under bump metallization is a metal transition layer between the pads 201 and the bonding bumps, which mainly plays the role of adhesion and diffusion barrier.

[0056] Please refer to Figure 4 and Figure 5 , Figure 5 is a top view of a plurality of patterned openings in the photoresist layer. After the formation of the adhesion layer 301 and the seed layer 302, a photoresist layer 303 is formed on the electrical interconnection layer, and the photoresist layer 303 has a plurality of patterned openings 304.

[0057] It should be noted that in this embodiment, the process steps for forming the photoresist layer 303 include coating, pre-baking, exposure, development, and post-baking. Due to the many influencing factors of thick photoresist lithography, thick photoresist coating requires the use of photoresist material that meets the rheology, supporting spin coating single operation thickness of 40-100 μm. In order to improve the verticality of the bonding bumps and the bonding frame sidewalls formed subsequently, the thickness of the photoresist layer 303 needs to be greater than the height of the bonding bumps and the bonding frame, and the photoresist material with a thickness of about 80 μm or more is coated at one time.

[0058] Please refer to Figure 6 and Figure 7 , Figure 7 is a top view of the bonding bumps and the bonding frame, and the bonding bumps 305 and the bonding frame 306 are formed in the corresponding patterned openings 304; after the bonding bumps 305 and the bonding frame 306 are formed, the photoresist layer 303 is removed.

[0059] In this embodiment, the bonding bumps 305 are electrically connected to the corresponding pads 201, i.e., the bonding bumps 305 are electrically connected to the electrical interconnection layer.

[0060] In this embodiment, the electroplating process is used to form the bonding bumps 305 and the bonding frame 306 in the corresponding patterned openings 304.

[0061] In this embodiment, the materials of the bonding bumps 305 and the bonding frame 306 are both copper.

[0062] In this embodiment, the bonding bumps 305 and the bonding frame 306 are formed simultaneously to simplify the process and improve the efficiency of the process.

[0063] It should be noted that in this embodiment, the bonding bumps 305 and the pads 201 have electrical connection, which is used for electrical signal transmission; the bonding frame 306 is a ring-shaped frame structure, which does not need to bear the role of electrical connection, and is used as a support and fixing role when connecting with the subsequent driving substrate, and as a connection pipeline for cooling liquid flow. The height of the formed bonding bumps 305 and the bonding frame 306 needs to be consistent so that the driving substrate can be bonded and connected simultaneously subsequently.

[0064] In this embodiment, after the bonding bumps 305 and the bonding frame 306 are formed, the surface thereof can also be subjected to electroplated nickel treatment to form a uniform nickel barrier layer (not shown), which prevents the diffusion of copper and improves the solderability. After the formation of the nickel barrier layer, a solder layer (not shown) is electroplated on the surface thereof for the subsequent soldering step.

[0065] In other embodiments, the nickel barrier layer is selected to be electroplated or omitted according to application requirements. In some copper pillar products, the nickel barrier layer can be directly omitted.

[0066] In this embodiment, the photoresist layer 303 can be removed by using chemical solvents or plasma cleaning.

[0067] Please continue to refer to Figure 6 After the photoresist layer 303 is removed, the seed layer 302 and the adhesion layer 301 exposed on the surface of the electrical interconnection layer are removed.

[0068] In this embodiment, the etching liquid is used to remove the excess adhesion layer 301 and the seed layer 302, and ensure that the etching liquid does not damage the bonding bumps 305, the bonding frame 306, and the solder layer that have been formed.

[0069] Please refer to Figure 8 A driving substrate 400 is provided, the driving substrate 400 has a first liquid channel 401 therein, and the surface of the driving substrate 400 exposes an inlet 4011 and an outlet 4012 of the first liquid channel 401.

[0070] It should be noted that in this embodiment, the surface of the driving substrate 400 also has bonding point positions corresponding to the bonding bumps 305 and the bonding frame 306, wherein the bonding point positions for bonding with the bonding frame 306 do not have the function of electrical connection, and are only used to fix the connection between the bonding frame 306 and the driving substrate 400 after the bonding.

[0071] Please refer to Figure 9 The chip structure 100 is flipped and bonded with the driving substrate 400, the driving substrate 400 is bonded and connected with the bonding bumps 305 and the bonding frame 306 respectively, the second liquid channel 402 is formed between the chip structure 100 and the driving substrate 400 after the bonding and connection, and the bonding frame 306 is in communication with the first liquid channel 401, specifically, the bonding frame 306 is in communication with the inlet 4011 and the outlet 4012 of the first liquid channel 401 as a connecting pipeline.

[0072] In this embodiment, the temperature during the bonding is usually set at about 245°C, and the bonding bump 305 and the bonding frame 306 are melted to form a stable connection with the driving substrate 400. The bonding frame 306 is connected to the first liquid flow channel 401 inside the driving substrate 400 as a connecting pipe, so that the first liquid flow channel 401 and the second liquid flow channel 402 form a complete liquid flow channel structure. In this embodiment, the cooling liquid is circulated through the second liquid flow channel 402, which can dissipate heat from the chip structure 100 from the bottom.

[0073] Please refer to Figure 10 The encapsulation layer 500 is formed to cover the chip structure 100, the electrical interconnection layer, the bonding bump 305, the bonding frame 306, and part of the driving substrate 400.

[0074] In this embodiment, the encapsulation layer 500 wraps the support substrate 103 of the chip structure 100. In another embodiment, a thinning process is performed to remove the encapsulation layer material on the top of the chip structure 100 until the support substrate 103 is exposed, which is more conducive to the subsequent heat dissipation of the chip structure 100. In an embodiment, the thinning process can use a chemical mechanical polishing process.

[0075] In this embodiment, the material of the encapsulation layer 500 is epoxy molding compound. It is a commonly used semiconductor packaging material, mainly used to protect the chip structure 100 from physical damage, chemical corrosion, and environmental factors; at the same time, it can fully fill the gap of the device, which helps to improve the reliability and stability of the device. By heating the epoxy resin and other materials to a molten state and then injecting them, the encapsulation layer 500 is formed after cooling and solidification to enhance the stability of the connection and protect the solder joints.

[0076] Please refer to Figure 11 After the encapsulation layer 500 is formed, the reinforcing ring 600 is bonded to the driving substrate 400, which surrounds the chip structure 100, the electrical interconnection layer, the bonding bump 305, and the bonding frame 306.

[0077] In this embodiment, the main function of the reinforcing ring 600 is to increase the mechanical strength of the packaging structure, and at the same time, it can suppress the warping phenomenon that occurs during packaging.

[0078] Please continue to refer to Figure 11The liquid inlet pipe 701 and the liquid outlet pipe 702 are provided; the liquid inlet pipe 701 and the driving substrate 400 and the liquid outlet pipe 702 and the driving substrate 400 are fixed and bonded based on the underfill adhesive 800, and the liquid inlet pipe 701 is communicated with the liquid inlet 4011 after the fixing and bonding, and the liquid outlet pipe 702 is communicated with the liquid outlet 4012.

[0079] The first liquid flow channel 4011 in the driving substrate 400 and the second liquid flow channel 402 formed by bonding the driving substrate 400 and the chip structure 100 are communicated through the bonding frame 306 as a connecting pipeline to form a complete liquid flow channel structure. The liquid inlet pipe 701 and the liquid outlet pipe 702 are respectively communicated with the liquid inlet 4011 and the liquid outlet 4012 of the driving substrate 400 to provide a convenient docking mode. Moreover, the liquid inlet pipe 701 and the driving substrate 400 and the liquid outlet pipe 702 and the driving substrate 400 are fixed and bonded by the underfill adhesive 800 to meet the sealing reliability requirements for long-term use. The complete liquid flow channel structure formation and the fixed connection of the liquid inlet pipe 701 and the liquid outlet pipe 702 can match the requirements of the existing packaging process, and thus mass production can be realized. In addition, the circulating cooling liquid also flows through the first liquid flow channel 401 in the driving substrate 400, which can also dissipate heat for the driving substrate 500.

[0080] It should be noted that the underfill adhesive 800 is an epoxy resin material used to fill the gap, which aims to enhance the mechanical stability and improve the thermal stress resistance. The process flow generally includes three steps of dispensing, pre-curing and full curing to fill the gap and enhance the reliability of the connection.

[0081] In this embodiment, before the reinforcing ring 600 is bonded on the driving substrate 400, the reinforcing ring 600 is also subjected to opening treatment; the liquid inlet pipe 701 and the liquid outlet pipe 702 are fixedly connected with the driving substrate 400 by penetrating the reinforcing ring 600. By penetrating the reinforcing ring 600 with the liquid inlet pipe 701 and the liquid outlet pipe 702, the reinforcing ring 600 can provide more stable limiting for the liquid inlet pipe 701 and the liquid outlet pipe 702, thereby effectively reducing the problem of liquid leakage caused by loosening of the bonding position of the liquid inlet pipe 701 and the liquid outlet pipe 702 with the driving substrate 400.

[0082] It should be noted that in the embodiment, since the reinforcing ring 600, the liquid inlet pipe 701 and the liquid outlet pipe 702 have formed an integral structure before being fixedly bonded with the driving substrate 400, the underfill adhesive simultaneously fixes the reinforcing ring 600, the liquid inlet pipe 701 and the liquid outlet pipe 702 with the driving substrate 400.

[0083] In other embodiments, the reinforcing ring, the liquid inlet pipe and the liquid outlet pipe can also adopt an integrally formed structure.

[0084] In the embodiment, the material of the liquid inlet pipe 701 and the liquid outlet pipe 702 includes a metal material, specifically carbon steel, copper, stainless steel, aluminum alloy or titanium. The metal material of the liquid inlet pipe 701 and the liquid outlet pipe 702 can have good mechanical strength.

[0085] Correspondingly, the embodiment of the application also provides a packaging structure, please continue to refer to Figure 11 , including: a chip structure 100, the chip structure 100 is a multi-layer stacked chip, including: 1 logic chip 101 and 4 storage chips 102, 5 chips are stacked in turn, and are supported by a support substrate 103; an electrical interconnection layer, the electrical interconnection layer is located on the surface of the chip structure 100, and the electrical interconnection layer is electrically connected with the chip structure 100; a plurality of bonding bumps 305, the bonding bumps are located on the electrical interconnection layer, the bonding bumps 305 are electrically connected with the electrical interconnection layer, and the bonding bumps 305 are electrically connected with the chip structure 100 through the electrical interconnection layer; a bonding frame 306, the bonding frame 306 is located on the electrical interconnection layer; a driving substrate 400, the driving substrate 400 has a first liquid flow channel 401 in it, the surface of the driving substrate 400 exposes the liquid inlet 4011 and the liquid outlet 4012 of the first liquid flow channel 401, the driving substrate 400 is bonded with the bonding bumps 305 and the bonding frame 306 respectively, and the bonding frame 306 is communicated with the first liquid flow channel 401; a liquid inlet pipe 701, the liquid inlet pipe 701 is communicated with the liquid inlet 4011; a liquid outlet pipe 702, the liquid outlet pipe 702 is communicated with the liquid outlet 4012; an underfill adhesive 800, the underfill adhesive 800 is used for fixing and bonding the liquid inlet pipe 701 and the driving substrate 400, and the liquid outlet pipe 702 and the driving substrate 400.

[0086] The driving substrate 400 is bonded with the chip structure 100 to form a second liquid flow channel 402, and the second liquid flow channel 402 and the first liquid flow channel 401 in the driving substrate 400 are communicated through the bonding frame 306 as a connecting pipeline to form a complete liquid flow channel structure. The liquid inlet pipe 701 and the liquid outlet pipe 702 are respectively communicated with the liquid inlet 4011 and the liquid outlet 4012 of the driving substrate 400, providing a convenient docking mode. Moreover, the liquid inlet pipe 701 and the driving substrate 400, and the liquid outlet pipe 702 and the driving substrate 400 are fixedly bonded by the underfill adhesive 800 to meet the sealing reliability requirements of long-term use. The complete liquid flow channel structure formation and the fixed connection of the liquid inlet pipe 701 and the liquid outlet pipe 702 can match the requirements of the existing packaging process, and thus mass production can be realized. In addition, the circulation of the cooling liquid also flows through the first liquid flow channel 401 in the driving substrate 400, and can also dissipate heat for the driving substrate 400.

[0087] In the embodiment, the packaging structure further comprises a reinforcing ring 600 located on the driving substrate 400, and the reinforcing ring 600 surrounds the chip structure 200, the electrical interconnection layer, the bonding bump 305 and the bonding frame 306. The reinforcing ring 600 can increase the overall mechanical strength of the packaging structure, and can also inhibit the warping phenomenon that occurs during packaging.

[0088] In the embodiment, the liquid inlet pipe 701 and the liquid outlet pipe 702 are fixedly connected with the driving substrate 400 through the reinforcing ring 600. By penetrating the liquid inlet pipe 701 and the liquid outlet pipe 702 through the reinforcing ring 600, the reinforcing ring 600 can provide more stable limiting for the liquid inlet pipe 701 and the liquid outlet pipe 702, thereby effectively reducing the problem of loosening of the bonding position of the liquid inlet pipe 701 and the liquid outlet pipe 702 with the driving substrate 400, which leads to liquid leakage.

[0089] In the embodiment, the packaging structure further comprises a packaging layer 500 located on the chip structure 100 and the driving substrate 400, and the packaging layer 500 covers the chip structure 100, the electrical interconnection layer, the bonding bump 305, the bonding frame 306, and part of the driving substrate 400. The material of the packaging layer 500 adopts epoxy molding compound. It is a commonly used semiconductor packaging material, mainly used to protect the chip structure 100 from physical damage, chemical corrosion and environmental factors, and can fully fill the gap of the device, which helps to improve the reliability and stability of the device. The epoxy resin and other materials are heated to a molten state, then injected into a mold, and after cooling and solidification, the packaging layer 700 is formed.

[0090] In the embodiment, the electrical interconnection layer comprises a plurality of pads 201, the pads 201 are electrically connected with the chip structure 100, and the bonding bumps 305 are electrically connected with the corresponding pads 201.

[0091] In the embodiment, the material of the liquid inlet pipe 701 and the liquid outlet pipe 702 comprises a metal material, and specifically can be carbon steel, copper, stainless steel, aluminum alloy or titanium. The metal material of the liquid inlet pipe 701 and the liquid outlet pipe 702 can have good mechanical strength.

[0092] It should be understood that the "one embodiment" or "an embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that the size of the sequence number of each process in various embodiments of the present disclosure does not mean the order of execution, and the execution order of each process should be determined according to its function and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure. The sequence number of the above-mentioned embodiments of the present disclosure is only for description, not representing the advantages and disadvantages of the embodiments.

[0093] It should be noted that in this document, the term "comprising" or "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or includes elements inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of additional identical elements in the process, method, article or device including the element.

[0094] The above is only an embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and any skilled person in the art can easily think of changes or replacements within the technical range disclosed by the present disclosure, which should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A package structure, characterized by, The chip structure is bonded with the driving substrate to form a second liquid flow channel, and the second liquid flow channel and the first liquid flow channel in the driving substrate are communicated through the bonding frame. Further comprising: The reinforcing ring is located on the driving substrate, and the reinforcing ring surrounds the chip structure, the electrical interconnection layer, the bonding bump and the bonding frame. The liquid inlet pipe and the liquid outlet pipe are fixedly connected with the driving substrate through the reinforcing ring. Further comprising: The encapsulation layer is located on the chip structure and the driving substrate and covers the chip structure, the electrical interconnection layer, the bonding bump, the bonding frame and part of the driving substrate. The electrical interconnection layer comprises a plurality of pads, the pads are electrically connected with the chip structure, and the bonding bump is electrically connected with the corresponding pad. The material of the liquid inlet pipe comprises a metal material; the material of the liquid outlet pipe comprises a metal material; the metal material comprises carbon steel, copper, stainless steel, aluminum alloy or titanium. The chip structure is bonded with the driving substrate to form a second liquid flow channel, and the second liquid flow channel and the first liquid flow channel in the driving substrate are communicated through the bonding frame.

2. The package structure of claim 1, wherein, Further comprising:

3. The package structure of claim 1, wherein, The reinforcing ring is located on the driving substrate, and the reinforcing ring surrounds the chip structure, the electrical interconnection layer, the bonding bump and the bonding frame. The liquid inlet pipe and the liquid outlet pipe are fixedly connected with the driving substrate through the reinforcing ring.

4. The package structure of claim 3, wherein, Further comprising:

5. The package structure of claim 1, wherein, The encapsulation layer is located on the chip structure and the driving substrate and covers the chip structure, the electrical interconnection layer, the bonding bump, the bonding frame and part of the driving substrate. The electrical interconnection layer comprises a plurality of pads, the pads are electrically connected with the chip structure, and the bonding bump is electrically connected with the corresponding pad.

6. The package structure of claim 1, wherein, The material of the liquid inlet pipe comprises a metal material; the material of the liquid outlet pipe comprises a metal material; the metal material comprises carbon steel, copper, stainless steel, aluminum alloy or titanium.

7. The package structure of claim 1, wherein, The chip structure is bonded with the driving substrate to form a second liquid flow channel, and the second liquid flow channel and the first liquid flow channel in the driving substrate are communicated through the bonding frame.

8. A method for forming a package structure, the method comprising: Further comprising: The reinforcing ring is located on the driving substrate, and the reinforcing ring surrounds the chip structure, the electrical interconnection layer, the bonding bump and the bonding frame. The liquid inlet pipe and the liquid outlet pipe are fixedly connected with the driving substrate through the reinforcing ring. Further comprising: The encapsulation layer is located on the chip structure and the driving substrate and covers the chip structure, the electrical interconnection layer, the bonding bump, the bonding frame and part of the driving substrate. The electrical interconnection layer comprises a plurality of pads, the pads are electrically connected with the chip structure, and the bonding bump is electrically connected with the corresponding pad. The material of the liquid inlet pipe comprises a metal material; the material of the liquid outlet pipe comprises a metal material; the metal material comprises carbon steel, copper, stainless steel, aluminum alloy or titanium. The chip structure is bonded with the driving substrate to form a second liquid flow channel, and the second liquid flow channel and the first liquid flow channel in the driving substrate are communicated through the bonding frame. Further comprising: The reinforcing ring is located on the driving substrate, and the reinforcing ring surrounds the chip structure, the electrical interconnection layer, the bonding bump and the bonding frame. The liquid inlet pipe and the liquid outlet pipe are fixedly connected with the driving substrate through the reinforcing ring. Further comprising: The encapsulation layer is located on the chip structure and the driving substrate and covers the chip structure, the electrical interconnection layer, the bonding bump, the bonding frame and part of the driving substrate. The electrical interconnection layer comprises a plurality of pads, the pads are electrically connected with the chip structure, and the bonding bump is electrically connected with the corresponding pad. The material of the liquid inlet pipe comprises a metal material; the material of the liquid outlet pipe comprises a metal material; the metal material comprises carbon steel, copper, stainless steel, aluminum alloy or titanium.

9. The method of forming a package structure of claim 8, wherein, The chip structure is bonded with the driving substrate after being turned over, and a second liquid flow channel is formed between the bonded chip structure and the driving substrate, and the second liquid flow channel and the first liquid flow channel in the driving substrate are communicated through the bonding frame.

10. The method of forming a package structure of claim 8, wherein, Before the liquid inlet pipe and the liquid outlet pipe are fixed by bonding, the method further comprises: bonding a reinforcing ring on the driving substrate, and the reinforcing ring surrounds the chip structure, the electrical interconnection layer, the bonding bump and the bonding frame.

11. The method of forming a package structure of claim 10, wherein, Before the reinforcing ring is bonded on the driving substrate, the method further comprises: performing opening processing on the reinforcing ring; and the liquid inlet pipe and the liquid outlet pipe are fixedly connected with the driving substrate through the reinforcing ring.

12. The method of forming a package structure of claim 8, wherein, Before the liquid inlet pipe and the liquid outlet pipe are fixed by bonding, the method further comprises: forming a packaging layer, and the packaging layer covers the chip structure, the electrical interconnection layer, the bonding bump, the bonding frame and part of the driving substrate.

13. The method of forming a package structure of claim 8, wherein, The electrical interconnection layer comprises: a plurality of pads, the pads are electrically connected with the chip structure, and the bonding bump is electrically connected with the corresponding pad.

14. The method of forming a package structure of claim 8, wherein, The bonding bump and the bonding frame are formed synchronously.

15. The method of forming a package structure of claim 14, wherein, The forming method of the bonding bump and the bonding frame comprises: forming a photoresist layer on the electrical interconnection layer, and the photoresist layer has a plurality of patterned openings; forming the bonding bump and the bonding frame in the corresponding patterned openings; and removing the photoresist layer after the bonding bump and the bonding frame are formed.

16. The method of forming a package structure of claim 15, wherein, The bonding bump and the bonding frame are formed in the corresponding patterned openings by using an electroplating process.

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