Semiconductor heat dissipation device and semiconductor device

Abstract

The present application relates to the field of semiconductor technology, and discloses a semiconductor heat dissipation device and a semiconductor device. The semiconductor heat dissipation device includes a thin film substrate, semiconductor chips arranged along a first direction on the bearing surface of the thin film substrate, and the first direction is the extension direction of the side edge of the bearing surface; a resin protective layer, which is wound around the semiconductor chips and connects the side edges of the semiconductor chips and the bearing surface of the thin film substrate; a graphic heat sink, which is connected to the side of the semiconductor chips facing away from the thin film substrate and covers the semiconductor chips, and an adhesive material layer is filled between the graphic heat sink and the semiconductor chips, and the adhesive material layer further fills between the graphic heat sink, the resin protective layer and the thin film substrate; in the first direction, the ends of the semiconductor chips protrude from the adhesive material layer, and heat dissipation recessed notches are formed on both sides of the graphic heat sink, and the ends of the semiconductor chips are correspondingly located in the heat dissipation recessed notches. The present application improves the heat dissipation effect of the semiconductor chips.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to a semiconductor heat dissipation device. Background Art

[0002] In semiconductor integrated circuits, as the performance of semiconductor chips increases, their heat generation also increases. As a heat dissipation means, a patterned heat sink is usually attached to improve the heat dissipation efficiency. However, in related technologies, once air enters when the chip is attached to the patterned heat sink, since there is no means to exhaust the air, the air will accumulate between the chip and the patterned heat sink. Due to the existence of voids in the area where the air accumulates, the patterned heat sink cannot be closely attached to the chip, reducing the contact area between the two, and thus reducing the heat dissipation efficiency, causing the chip temperature to rise and posing a risk of damage. This situation needs to be changed. Summary of the Invention

[0003] In view of this, this application provides a semiconductor heat dissipation device and a semiconductor device to improve the heat dissipation effect of semiconductor chips.

[0004] To achieve the above object, according to the first aspect, the technical solution adopted is:

[0005] A semiconductor heat dissipation device, comprising:

[0006] A thin film substrate for carrying a semiconductor chip having a first set thickness, and the semiconductor chips are arranged along a first direction on the carrying surface of the thin film substrate, wherein the first direction is the extending direction of the side of the carrying surface;

[0007] A resin protective layer wound around the semiconductor chip and connecting the side of the semiconductor chip and the carrying surface of the thin film substrate;

[0008] A patterned heat sink connected to the side of the semiconductor chip facing away from the thin film substrate and covering the semiconductor chip, a bonding material layer is filled between the patterned heat sink and the semiconductor chip, and the bonding material layer further fills between the patterned heat sink, the resin protective layer and the thin film substrate;

[0009] Wherein, in the first direction, the end of the semiconductor chip protrudes from the bonding material layer, and heat dissipation concave notches are formed on both sides of the patterned heat sink and the bonding material layer, and the end of the semiconductor chip is correspondingly located in the heat dissipation concave notches.

[0010] This application is further configured such that: in the first direction, the heat dissipation concave notches gradually expand from near the semiconductor chip to away from the semiconductor chip.

[0011] The present application is further configured as follows: the adhesive material layer includes a first heat dissipation material portion and a second heat dissipation material portion, the first heat dissipation material portion is applied between the graphic heat sink and the semiconductor chip, and the second heat dissipation material portion is connected to the first heat dissipation material portion and is filled between the graphic heat sink, the resin protective layer and the film substrate.

[0012] The present application is further configured as follows: the forming material of the first heat dissipation material part includes liquid silver paste or colloidal thermal conductive adhesive; and the colloidal thermal conductive adhesive includes at least one of silver paste thermal conductive adhesive, graphene-based thermal conductive adhesive or ceramic filler thermal conductive adhesive.

[0013] The present application is further configured such that: in the second direction, the vertical projection of the first heat dissipation material portion and the vertical projection of the semiconductor chip are located on the same center line, and the vertical projection of the first heat dissipation material portion partially covers the vertical projection of the semiconductor chip, and the vertical projections of the first heat dissipation material portion and the second heat dissipation material portion are located within the coverage range of the vertical projection of the graphic heat sink, wherein the second direction is perpendicular to the supporting surface of the film substrate and the first direction.

[0014] The present application is further configured to: further include a transport tape for loading and transporting the graphic heat sink before the graphic heat sink is connected to the semiconductor chip;

[0015] A plurality of the pattern heat sinks are arranged at intervals on the transport tape, and the adhesive material layer is connected between the pattern heat sinks and the transport tape.

[0016] The present application is further configured as follows: an adjustment groove is provided on the side of the transport tape facing the graphic heat sink, the first heat dissipation material portion of the adhesive material layer is connected to the graphic heat sink and is located in the adjustment groove, and the second heat dissipation material portion of the adhesive material layer is connected between the graphic heat sink and the transport tape and is arranged on both sides of the first heat dissipation material portion.

[0017] The present application is further configured as follows: it also includes a resin heat dissipation layer, which is coated on the semiconductor chip and the resin protective layer and wraps the semiconductor chip and the resin protective layer, the graphic heat sink is connected to the side of the resin heat dissipation layer away from the film substrate and the adhesive material layer is filled between the graphic heat sink and the resin heat dissipation layer.

[0018] The present application is further configured such that: the semiconductor chip has a second set thickness smaller than the first set thickness. After polishing the semiconductor chip from the first set thickness to the second set thickness, the side of the semiconductor chip facing away from the thin film substrate has an integral plane, and the patterned heat sink covers the integral plane through the adhesive material layer.

[0019] According to the second aspect, the technical solution adopted is:

[0020] A semiconductor device, the semiconductor device includes the semiconductor heat dissipation device as described in any one of the above embodiments.

[0021] In summary, compared with the prior art, the present application discloses a semiconductor heat dissipation device and a semiconductor device. Specifically, semiconductor chips are arranged along a first direction on the bearing surface of a thin film substrate. A resin protection layer is wound around the semiconductor chips and connects the side edges of the semiconductor chips and the bearing surface of the thin film substrate. A patterned heat sink is connected to the side of the semiconductor chips facing away from the thin film substrate and covers the semiconductor chips. Among them, an adhesive material layer is filled between the patterned heat sink and the semiconductor chips, and the adhesive material layer further fills between the patterned heat sink, the resin protection layer and the thin film substrate. The ends of the semiconductor chips protrude from the adhesive material layer in the first direction, and heat dissipation recessed notches are formed on both sides of the patterned heat sink. The ends of the semiconductor chips are correspondingly located in the heat dissipation recessed notches. That is, through the above settings, when the patterned heat sink is attached to the semiconductor chips, the possible accumulation of an air layer between the two is avoided, and an exhaust channel is constructed for this air layer, so as to ensure the close attachment of the patterned heat sink and the semiconductor chips and improve the heat dissipation efficiency of the semiconductor chips. Description of the Drawings

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained according to these drawings.

[0023] Figure 1 is a schematic plan view of the first semiconductor heat dissipation device according to an embodiment of the present application;

[0024] Figure 2 is a schematic cross-sectional view of the first semiconductor heat dissipation device according to an embodiment of the present application;

[0025] Figure 3 is a schematic plan view of the second semiconductor heat dissipation device according to an embodiment of the present application;

[0026] Figure 4It is a schematic cross-sectional structure diagram of the second semiconductor heat dissipation device according to an embodiment of the present application;

[0027] Figure 5 It is a schematic plan structure diagram of the third semiconductor heat dissipation device according to an embodiment of the present application;

[0028] Figure 6 It is a schematic plan structure diagram of the transport tape according to an embodiment of the present application;

[0029] Figure 7 It is a schematic cross-sectional structure diagram of the transport tape according to an embodiment of the present application;

[0030] Figure 8 It is a schematic cross-sectional structure diagram of the third semiconductor heat dissipation device according to an embodiment of the present application;

[0031] Figure 9 It is a schematic cross-sectional structure diagram of the fourth semiconductor heat dissipation device according to an embodiment of the present application. Detailed implementation manners

[0032] Here, the exemplary embodiments will be described in detail, and the examples are shown in the drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all implementation manners consistent with the present application. On the contrary, they are only examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0033] It should be noted that in this article, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of another identical element in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanations in the specific embodiments or further in combination with the context in the specific embodiments.

[0034] It should be further understood that the terms "comprising" and "including" indicate the presence of the stated features, steps, operations, elements, components, items, types, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, types, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application can be interpreted inclusively, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and again, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". An exception to this definition only occurs when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0035] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms, unless the context indicates otherwise.

[0036] It should be understood that the orientation or positional relationship indicated by the terms "top", "bottom", "upper", "lower", "vertical", "horizontal", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application.

[0037] For the convenience of description, in the following embodiments, the orthogonal space formed by the horizontal plane and the vertical direction is taken as an example for illustration, and this prerequisite should not be construed as a limitation on this application.

[0038] Please refer to Figure 1 and Figure 2 , the semiconductor heat dissipation device of the embodiment of this application includes a thin film substrate 1, a resin protection layer 3, and a patterned heat sink 4. Specifically, the thin film substrate 1 is used to carry a semiconductor chip 2 having a first set thickness, and the semiconductor chips 2 are arranged along a first direction on the carrying surface 1a of the thin film substrate 1, where the first direction is the extending direction of the side of the carrying surface 1a.

[0039] Preferably, the thin film substrate 1 is a COF (Chip-on-Film) thin film. The COF thin film has good flexibility, is suitable for applications in scenarios that require bending or lightweighting, can be better adapted to other integrated circuit components, and the COF thin film itself has a carrier function, on which circuit design can be carried out, reducing unnecessary connections, so that the semiconductor heat dissipation device can be more compact and have a higher integration level.

[0040] Wherein, the upper surface of the thin film substrate 1 can be used as the bearing surface 1a of the thin film substrate 1. The bearing surface 1a is an integral plane, and the integral plane can be understood as a complete and crack-free plane. Additionally, a heat-conducting coating or heat-conducting material can be added on the bearing surface 1a.

[0041] It should be noted that the embodiment of the present application constructs an X-Y coordinate system. Taking Figure 2 or Figure 4 as an example, the X-axis direction can be regarded as the first direction, that is, the extension direction of the side of the bearing surface 1a or the left-right extension direction of the semiconductor heat dissipation device. The Y-axis direction can be regarded as the second direction, that is, the direction perpendicular to the bearing surface 1a of the thin film substrate 1 and the first direction or the up-down extension direction of the semiconductor heat dissipation device. Of course, this embodiment is not limited thereto. X-Y can also be any other directions perpendicular to each other in space according to actual needs, which will not be elaborated here.

[0042] Furthermore, the resin protection layer 3 is wound around the semiconductor chip 2 and connects the side of the semiconductor chip 2 and the bearing surface 1a of the thin film substrate 1, for protecting the semiconductor chip 2 on the thin film substrate 1.

[0043] Preferably, the resin protection layer 3 can be selected from epoxy resin or polyimide resin with high heat resistance, chemical corrosion resistance and good adhesion.

[0044] In addition, the patterned heat sink 4 is connected to the side of the semiconductor chip 2 facing away from the thin film substrate 1 and covers the semiconductor chip 2, for dissipating heat from the semiconductor chip 2.

[0045] Wherein, an adhesive material layer 5 is filled between the patterned heat sink 4 and the semiconductor chip 2, and the adhesive material layer 5 further fills the space between the patterned heat sink 4, the resin protection layer 3 and the thin film substrate 1.

[0046] It should be noted that the graphic heat sink 4 is connected to the semiconductor chip 2 through the adhesive material layer 5. While ensuring the stable assembly of the graphic heat sink 4 and the semiconductor chip 2, the adhesive material layer 5 conducts the heat of the semiconductor chip 2 to the graphic heat sink 4 for heat dissipation. At the same time, the design that the adhesive material layer 5 extends and fills between the graphic heat sink 4, the resin protection layer 3 and the film substrate 1 can increase the heat dissipation path, ensure the heat dissipation effect of the graphic heat sink 4 and improve the overall structural stability of the semiconductor heat dissipation device. Moreover, the extended and filled adhesive material layer 5 can provide a certain connection buffer to reduce the stress generated by different components due to thermal expansion and contraction, and prevent material delamination or cracking during long-term use.

[0047] In the specific implementation process, in the first direction, the ends of the semiconductor chip 2 protrude from the adhesive material layer 5, that is, the two ends of the semiconductor chip 2 are not covered by the adhesive material layer 5. Then, when the graphic heat sink 4 is joined to the semiconductor chip 2 through the adhesive material layer 5, the air that may exist on the semiconductor chip 2 side can be discharged from the uncovered ends of the semiconductor chip 2, thereby preventing the relative contact area between the graphic heat sink 4 and the semiconductor chip 2 from decreasing, ensuring the close fit between the graphic heat sink 4 and the semiconductor chip 2, and further ensuring the overall heat dissipation effect of the semiconductor heat dissipation device.

[0048] Continue to refer to Figure 3 and Figure 4 , heat dissipation recessed notches 6 are provided on both sides of the graphic heat sink 4 and the adhesive material layer 5, and the ends of the semiconductor chip 2 are correspondingly located in the heat dissipation recessed notches 6, that is, the structural design on both sides of the graphic heat sink and the adhesive material layer 5 is such that the ends of the semiconductor chip 2 are not covered, thereby forming an exhaust channel at the edge of the adhesive material layer 5. Then, during the connection process of the graphic heat sink 4 to the semiconductor chip 2 through the adhesive material layer 5, the air on the semiconductor chip 2 side can be discharged through this exhaust channel, avoiding air bubbles being enclosed in the adhesive material layer 5 to form a thermal resistance, which affects the heat conduction from the semiconductor chip 2 to the graphic heat sink 4. That is, the heat dissipation recessed notches 6 enable the adhesive material layer 5 to more evenly cover the area between the semiconductor chip 2 and the graphic heat sink 4, thereby reducing the thermal resistance caused by the voids generated by air bubbles, and ensuring the close fit between the graphic heat sink 4 and the semiconductor chip 2, further enhancing the efficiency of heat conduction.

[0049] It should be noted that in the first direction, the heat dissipation recessed notches 6 gradually expand from near the semiconductor chip 2 to away from the semiconductor chip 2. Then, the gradually expanding heat dissipation recessed notches 6 contribute to reducing the resistance of air discharge and improving the smoothness of air exhaust.

[0050] Preferably, the heat dissipation recessed notches 6 can be designed in a V-shaped notch structure or a trapezoidal notch structure.

[0051] Refer to Figure 5, the bonding material layer 5 may include a first heat dissipation material portion 51 and a second heat dissipation material portion 52. The first heat dissipation material portion 51 is applied between the patterned heat sink 4 and the semiconductor chip 2, and the second heat dissipation material portion 52 is connected to the first heat dissipation material portion 51 and fills the space between the patterned heat sink 4, the resin protection layer 3, and the film substrate 1.

[0052] In the specific implementation process, the first heat dissipation material portion 51 dominates the heat conduction work for the semiconductor chip 2, transferring the heat of the semiconductor chip 2 to the patterned heat sink 4. The second heat dissipation material portion 52 can increase the heat dissipation path, while ensuring the stable connection relationship between the patterned heat sink 4, the resin protection layer 3, and the film substrate 1, providing a certain connection buffer to reduce the stress generated by the thermal expansion and contraction of different components, and preventing material delamination or cracking during long-term use.

[0053] It can be understood that the heat dissipation recessed notch 6 can be located on both sides of the first heat dissipation material portion 51, or the heat dissipation recessed notch 6 is located on both sides of the first heat dissipation material portion 51 and extends to the second heat dissipation material portion 52 at the same time.

[0054] Furthermore, the forming material of the first heat dissipation material portion 51 includes liquid silver paste. It should be noted that liquid silver paste has excellent thermal conductivity. Using liquid silver paste as the forming material of the first heat dissipation material portion 51 can significantly improve the heat dissipation effect, help to more quickly direct the heat of the semiconductor chip 2 to the patterned heat sink 4, thereby enhancing the overall thermal management ability of the heat dissipation device. And liquid silver paste has good fluidity, which can effectively fill the tiny gaps between the semiconductor chip 2 and the patterned heat sink 4, avoiding the generation of voids or bubbles. Based on this, in an application scenario, the semiconductor heat dissipation device can omit the design of the heat dissipation recessed notch 6, that is, the selection of the liquid silver paste for the first heat dissipation material portion 51 no longer requires changing the processing of the patterned heat sink 4 according to the chip size.

[0055] In one embodiment, the forming material of the first heat dissipation material portion 51 includes a colloidal thermal conductive adhesive. Among them, the colloidal thermal conductive adhesive includes at least one of silver paste thermal conductive adhesive, graphene-based thermal conductive glue, or ceramic filler thermal conductive glue. Specifically, the silver paste thermal conductive adhesive not only has excellent thermal conductivity but also can provide strong adhesion, ensuring the stable connection between the patterned heat sink 4 and the semiconductor chip 2, preventing contact failure caused by external forces. Compared with metal-based thermal conductive glue, graphene-based thermal conductive glue can maintain good adhesion and high-temperature resistance for a long time, and is suitable for high-temperature and high-frequency working environments.

[0056] It should be noted that in the second direction, the vertical projection of the first heat dissipation material portion 51 and the vertical projection of the semiconductor chip 2 are located on the same center line, and the vertical projection of the first heat dissipation material portion 51 partially covers the vertical projection of the semiconductor chip 2. Moreover, the vertical projections of the first heat dissipation material portion 51 and the second heat dissipation material portion 52 are within the coverage of the vertical projection of the graphic heat sink 4.

[0057] Specifically, the vertical projection of the first heat dissipation material portion 51 and the vertical projection of the semiconductor chip 2 being on the same center line ensures the optimal contact position between the first heat dissipation material portion 51 and the semiconductor chip 2, which can minimize the thermal resistance during the heat conduction process, ensure that heat can be efficiently conducted from the semiconductor chip 2 to the first heat dissipation material portion 51 and further transferred to the graphic heat sink 4, and also avoid voids or uneven regions between the first heat dissipation material portion 51 and the semiconductor chip 2, thereby optimizing the heat flow path and improving the heat conduction efficiency.

[0058] Moreover, the vertical projections of the first heat dissipation material portion 51 and the second heat dissipation material portion 52 being within the coverage of the vertical projection of the graphic heat sink 4 ensures that the adhesive material layer 5 is configured between the semiconductor chip 2 and the graphic heat sink 4 without overflowing. That is, all the heat conduction of the first heat dissipation material portion 51 and the second heat dissipation material portion 52 acts on the graphic heat sink 4. Then, the graphic heat sink 4 fully contacts the adhesive material layer 5 throughout the heat flow path, ensuring the heat absorption and diffusion ability of the graphic heat sink 4, avoiding heat retention or loss, and improving the heat dissipation efficiency.

[0059] In one embodiment, referring to Figure 6 and Figure 7 , the semiconductor heat dissipation device further includes a transport tape 7 for loading and transporting the graphic heat sink 4 before the graphic heat sink 4 is connected to the semiconductor chip 2.

[0060] Specifically, several graphic heat sinks 4 are arranged at intervals on the transport tape 7, and the adhesive material layer 5 is connected between the graphic heat sink 4 and the transport tape 7.

[0061] Using the transport tape 7 as the transport and loading tool for the graphic heat sink 4, and connecting the adhesive material layer 5 between the graphic heat sink 4 and the transport tape 7 can eliminate the steps and corresponding equipment for applying adhesives on the side of the semiconductor chip 2 in the related art, thereby improving the assembly efficiency of the semiconductor heat dissipation device.

[0062] Furthermore, an adjustment groove 71 is provided on the side of the transport tape 7 facing the graphic heat sink 4. Then, the first heat dissipation material part 51 of the adhesive material layer 5 is connected to the graphic heat sink 4 and located in the adjustment groove 71, and the second heat dissipation material part 52 of the adhesive material layer 5 is connected between the graphic heat sink 4 and the transport tape 7 and arranged on both sides of the first heat dissipation material part 51. This ensures that the adhesive material layer 5 is stably connected between the graphic heat sink 4 and the transport tape 7. At the same time, the size of the first heat dissipation material part 51 can be adjusted through the adjustment groove 71, that is, the amount of the forming material of the first heat dissipation material part 51 can be adjusted, thereby improving the applicable range of the graphic heat sink 4 for different semiconductor chips 2. That is to say, the design of the adjustment groove 71 enables the forming material of the first heat dissipation material part 51 to more precisely control the filling amount. For example, by adjusting the size of the adjustment groove 71, the volume and amount of the first heat dissipation material part 51 can be adjusted, avoiding problems such as waste of excess heat dissipation material or insufficient heat dissipation caused by insufficient material.

[0063] It can be understood that before the graphic heat sink 4 is connected to the semiconductor chip 2, the adjustment groove 71 provides a fixed accommodation space for the first heat dissipation material part 51, that is, the first heat dissipation material part 51 is located in the adjustment groove 71, and it can firmly contact and be stably fixed to the graphic heat sink 4, while the second heat dissipation material part 52 fills on both sides of the first heat dissipation material part 51, ensuring the stable connection of the adhesive material layer 5 between the graphic heat sink 4 and the transport tape 7.

[0064] At the same time, the existence of the adjustment groove 71 effectively prevents the first heat dissipation material part 51 from shifting or loosening during transportation, and the adjustment groove 71 provides a preset space for the filling of the material, avoiding the deviation of the heat dissipation material amount caused by improper manual operation, thereby improving the accuracy and consistency in the production process.

[0065] In one embodiment, referring to Figure 8 , the semiconductor chip 2 may also have a second set thickness smaller than the first set thickness. Specifically, after the semiconductor chip 2 is polished from the first set thickness to the second set thickness, the side of the semiconductor chip 2 facing away from the thin film substrate 1 has an integral plane, and the graphic heat sink 4 covers the integral plane through the adhesive material layer 5.

[0066] Specifically, the first set thickness of the semiconductor chip 2 may include 500 - 600 microns, and the second set thickness of the semiconductor chip 2 may include 200 - 300 microns. During the process of polishing the semiconductor chip 2 from the first set thickness to the second set thickness, the strength of the semiconductor chip 2 can be improved, and at the same time, the flatness of the semiconductor chip 2 is improved, thereby preventing an air cavity or air layer from being generated when the graphic heat sink 4 is connected to the semiconductor chip 2 through the adhesive material layer 5. Also based on this, in an application scenario, the semiconductor heat dissipation device can omit the heat dissipation recess notch 6 design, that is, through the polishing design of the second set thickness, it is no longer necessary to change the processing of the graphic heat sink 4 according to the chip size.

[0067] Preferably, the first set thickness of the semiconductor chip 2 is 570 microns, and the second set thickness of the semiconductor chip 2 is 210 microns.

[0068] In one embodiment, referring to Figure 9 , the semiconductor heat dissipation device further includes a resin heat dissipation layer 8. The resin heat dissipation layer 8 can be coated on the semiconductor chip 2 and the resin protection layer 3, and wrap the semiconductor chip 2 and the resin protection layer 3. The graphic heat sink 4 is connected to the side of the resin heat dissipation layer 8 away from the thin film substrate 1, and an adhesive material layer 5 is filled between the graphic heat sink 4 and the resin heat dissipation layer 8.

[0069] It should be noted that the side of the resin heat dissipation layer 8 facing the graphic heat sink 4 can be an integral flat surface or an integral arc surface, that is, the side of the resin heat dissipation layer 8 facing the graphic heat sink 4 has a flatness to avoid air bubbles in the adhesive material layer 5, thereby preventing an air cavity or air layer from being generated when the graphic heat sink 4 is connected to the resin heat dissipation layer 8 through the adhesive material layer 5. Also based on this, in an application scenario, the semiconductor heat dissipation device can omit the heat dissipation recess notch 6 design, that is, through the selection of the resin heat dissipation layer 8, it is no longer necessary to change the processing of the graphic heat sink 4 according to the chip size.

[0070] In an application scenario, the side of the resin heat dissipation layer 8 facing the graphic heat sink 4 is an integral arc surface. Correspondingly, the graphic heat sink 4 matches the structural contour of the resin heat dissipation layer 8. Thus, the arc surface design of the two can help disperse the mechanical stress at the connection interface and reduce the stress concentration phenomenon. That is, under thermal expansion or external pressure, the arc surface can bear the pressure more evenly and avoid the failure or separation of the contact layer due to pressure concentration. For a heat dissipation device that works in a high-temperature environment for a long time, this structural design can improve the stability and reliability of the structure.

[0071] It should be noted that the graphic heat sink 4 in the embodiment of the present application can be in a fin structure, a mesh heat dissipation structure, or a honeycomb heat dissipation structure to ensure the heat dissipation effect of the semiconductor chip 2.

[0072] The embodiment of the present application further provides a semiconductor device. The semiconductor device includes the semiconductor heat dissipation device of any of the above embodiments. Compared with the semiconductor device in the related art, when the graphic heat sink of the present embodiment is attached to the semiconductor chip, the possible accumulation of the air layer between the two is avoided, and an emission channel is constructed for this air layer, so as to ensure the close attachment of the graphic heat sink and the semiconductor chip and improve the heat dissipation efficiency of the semiconductor chip.

[0073] For other working principles and processes of the semiconductor device of this embodiment, refer to the description of the semiconductor heat dissipation device in the foregoing embodiments of the present invention, which will not be elaborated here.

[0074] The above has introduced in detail a semiconductor heat dissipation device and a semiconductor device provided by the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. It should be noted that in the present application, the descriptions of each embodiment have their own emphases. For the parts not detailed or recorded in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0075] The above are only the preferred embodiments of the present application, and do not limit the patent scope of the present application accordingly. The technical features of the technical solutions of the present application can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, as long as the combination of these technical features does not conflict, is equally included in the patent protection scope of the present application.

Claims

1. A semiconductor heat dissipation device, characterized in that: include: A film substrate, used for carrying semiconductor chips having a first set thickness, and the semiconductor chips are arranged on a carrying surface of the film substrate along a first direction, wherein the first direction is an extension direction of a side edge of the carrying surface; A resin protective layer is disposed around the semiconductor chip and connects the side of the semiconductor chip and the supporting surface of the film substrate; A pattern heat sink connected to a side of the semiconductor chip away from the film substrate and covering the semiconductor chip, an adhesive material layer being filled between the pattern heat sink and the semiconductor chip, and the adhesive material layer further filling between the pattern heat sink, the resin protective layer and the film substrate; Among them, in the first direction, the end of the semiconductor chip protrudes from the adhesive material layer, and the graphic heat sink and the adhesive material layer are provided with heat dissipation recessed notches on both sides, the end of the semiconductor chip corresponds to the heat dissipation recessed notches, and in the first direction, the heat dissipation recessed notches gradually expand from close to the semiconductor chip to away from the semiconductor chip.

2. The semiconductor heat dissipation device according to claim 1, characterized in that: The adhesive material layer includes a first heat dissipation material portion and a second heat dissipation material portion, wherein the first heat dissipation material portion is applied between the graphic heat sink and the semiconductor chip, and the second heat dissipation material portion is connected to the first heat dissipation material portion and filled between the graphic heat sink, the resin protective layer and the film substrate.

3. The semiconductor heat dissipation device according to claim 2, characterized in that: The forming material of the first heat dissipation material part includes liquid silver paste or colloidal thermal conductive adhesive; and the colloidal thermal conductive adhesive includes at least one of silver paste thermal conductive adhesive, graphene-based thermal conductive adhesive or ceramic filler thermal conductive adhesive.

4. The semiconductor heat dissipation device according to claim 2, characterized in that: In the second direction, the vertical projection of the first heat dissipation material portion and the vertical projection of the semiconductor chip are located on the same center line, and the vertical projection of the first heat dissipation material portion partially covers the vertical projection of the semiconductor chip, and the vertical projections of the first heat dissipation material portion and the second heat dissipation material portion are located within the coverage range of the vertical projection of the graphic heat sink, wherein the second direction is perpendicular to the supporting surface of the film substrate and the first direction.

5. The semiconductor heat dissipation device according to claim 2, characterized in that: Also included is a shipping tape for loading and shipping the patterned heat sink before the patterned heat sink is attached to the semiconductor chip; A plurality of the pattern heat sinks are arranged at intervals on the transport tape, and the adhesive material layer is connected between the pattern heat sinks and the transport tape.

6. The semiconductor heat dissipation device according to claim 5, characterized in that: An adjustment groove is provided on the side of the transport tape facing the graphic heat sink, the first heat dissipation material portion of the adhesive material layer is connected to the graphic heat sink and is located in the adjustment groove, and the second heat dissipation material portion of the adhesive material layer is connected between the graphic heat sink and the transport tape and is arranged on both sides of the first heat dissipation material portion.

7. The semiconductor heat dissipation device according to claim 1, characterized in that: It also includes a resin heat dissipation layer, which is coated on the semiconductor chip and the resin protective layer and wraps the semiconductor chip and the resin protective layer. The graphic heat sink is connected to the side of the resin heat dissipation layer away from the film substrate and the adhesive material layer is filled between the graphic heat sink and the resin heat dissipation layer.

8. The semiconductor heat dissipation device according to claim 1, characterized in that: The semiconductor chip has a second set thickness that is smaller than the first set thickness. After the semiconductor chip is polished from the first set thickness to the second set thickness, the semiconductor chip has an integral plane on a side facing away from the film substrate, and the graphic heat sink is covered on the integral plane through the adhesive material layer.

9. A semiconductor device, characterized in that: The semiconductor device comprises the semiconductor heat dissipation device according to any one of claims 1 to 8.

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