Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The present invention discloses a light-emitting epitaxial wafer and a method for preparing the same, relating to the field of semiconductor optoelectronic devices. The light-emitting diode epitaxial wafer comprises, in order, a substrate, a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a first electron blocking layer, a first P-type semiconductor layer, a second electron blocking layer, and a second P-type semiconductor layer; the first electron blocking layer and the second electron blocking layer are both single-layer or multi-layer structures formed of AlGaInN material, and the barrier height of the first electron blocking layer is greater than the barrier height of the second electron blocking layer; the first P-type semiconductor layer is a single-layer or multi-layer structure formed of Mg-doped AlGaInN material, and the second P-type semiconductor layer is a single-layer or multi-layer structure formed of Mg-doped GaN material, and the doping concentration of the first P-type semiconductor layer is greater than the doping concentration of the second P-type semiconductor layer. Implementation of the present invention can improve the luminous efficiency of light-emitting diodes based on the light-emitting diode epitaxial wafer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor optoelectronic devices, and in particular to a light emitting diode epitaxial wafer and a preparation method thereof. Background Art

[0002] GaN-based light-emitting diodes are generally made of the AlGaInN material system. In this system, electrons have higher mobility and smaller effective mass than holes, and electrons are more easily activated and have a higher concentration. This leads to a significant mismatch between the electron-hole concentration injected into the active region. Quantum wells near the N-type semiconductor layer emit almost no light, while electrons can easily inject into the active region and even enter the P-type semiconductor layer, causing electron leakage. Furthermore, obtaining high-quality, high-hole-concentration P-type materials for light-emitting diodes is extremely difficult because the low ionization rate of Mg in the AlGaInN material system leads to a generally low hole concentration in P-type semiconductor materials. Furthermore, the electron blocking layer, a primary functional layer of the light-emitting diode, not only blocks electrons from being injected into the P-type layer to emit light, but also blocks holes from being injected into the active region, further reducing the hole concentration in the active region and exacerbating the electron-hole concentration mismatch problem in the active region. Therefore, in order to improve the luminous efficiency of GaN-based LEDs, it is essential to increase the hole injection efficiency of the P-type material and improve the electron-hole matching in the active region. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a light emitting diode epitaxial wafer and a preparation method thereof, which can improve the luminous efficiency.

[0004] In order to solve the above problems, the present invention provides a light-emitting diode epitaxial wafer, which includes a substrate, a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a first electron blocking layer, a first P-type semiconductor layer, a second electron blocking layer and a second P-type semiconductor layer stacked in sequence on the substrate;

[0005] Wherein, the first electron blocking layer and the second electron blocking layer are both single-layer or multi-layer structures formed of AlGaInN material, and the barrier height of the first electron blocking layer is greater than the barrier height of the second electron blocking layer;

[0006] The first P-type semiconductor layer is a single-layer or multi-layer structure formed by Mg-doped AlGaInN material, the second P-type semiconductor layer is a single-layer or multi-layer structure formed by Mg-doped GaN material, and the doping concentration of the first P-type semiconductor layer is greater than the doping concentration of the second P-type semiconductor layer.

[0007] As an improvement of the above technical solution, the first electron blocking layer includes a first superlattice layer, a second superlattice layer and a third superlattice layer sequentially stacked on the multi-quantum well layer;

[0008] The first superlattice layer includes an AlN layer and a first GaN layer stacked alternately, and the second superlattice layer includes an Al w Ga 1-w N layer and a second GaN layer, the third superlattice layer includes an alternately stacked Al x Ga 1-x N layer and Mg doped with In α Ga 1-α N-layer;

[0009] The first P-type semiconductor layer is Mg doped with Al a In b Ga 1-a-b N-layer;

[0010] The second electron blocking layer includes a fourth superlattice layer, a fifth superlattice layer and a sixth superlattice layer sequentially stacked on the first P-type semiconductor layer;

[0011] Wherein, the fourth superlattice layer comprises alternately stacked Al y Ga 1-y N layer and Mg doped with In β Ga 1-β N layer; the fifth superlattice layer includes alternately stacked Al z Ga 1-z N layer and Mg doped with In γ Ga 1-γ N layer, the sixth superlattice layer includes first Mg-doped GaN layers and Mg-doped In layers alternately stacked δ Ga 1-δ N-layer;

[0012] The second P-type semiconductor layer is a second Mg-doped GaN layer;

[0013] w≥x≥y≥z>a, α≤β≤γ≤δ.

[0014] As an improvement to the above technical solution, the number of periods of the first superlattice layer is 1 to 3, the thickness of the AlN layer is 0.36 nm to 2.9 nm, and the thickness of the first GaN layer is 0.6 nm to 5.8 nm;

[0015] The period number of the second superlattice layer is 2 to 5, and the Al w Ga 1-w The thickness of the N layer is 0.36 nm to 3.6 nm, and w is 0.5 to 0.8; the thickness of the second GaN layer is 0.36 nm to 3.6 nm;

[0016] The period number of the third superlattice layer is 2 to 6, and the Al x Ga 1-xThe thickness of the N layer is 0.36nm to 3.6nm, and x is 0.35 to 0.68; the Mg doped In α Ga 1-α The thickness of the N layer is 0.36nm~3.6nm, α is 0.02~0.08, and the doping concentration is 2.16×10 18 cm -3 ~2.53×10 19 cm -3 .

[0017] As an improvement of the above technical solution, the Mg doped Al a In b Ga 1-a-b The thickness of the N layer is 8nm~210nm, a≤0.32, b≤0.09, and the doping concentration is 1.2×10 19 cm -3 ~3.05×10 20 cm -3 ;

[0018] The thickness of the second Mg-doped GaN layer is 3.5 nm to 120 nm, and the doping concentration is 1.06×10 19 cm -3 ~8.76×10 19 cm -3 .

[0019] As an improvement to the above technical solution, the period number of the fourth superlattice layer is 2 to 5, and the Al y Ga 1-y The thickness of the N layer is 0.32nm to 3.8nm, and y is 0.3 to 0.6; the Mg doped In β Ga 1-β The thickness of the N layer is 0.32nm~3.8nm, β is 0.02~0.09, and its doping concentration is 3.51×10 18 cm -3 ~2.87×10 19 cm -3 ;

[0020] The period number of the fifth superlattice layer is 2 to 7, and the Al z Ga 1-z The thickness of the N layer is 0.32nm~3.8nm, z is 0.2~0.5; Mg is doped with In γ Ga 1-γ The thickness of the N layer is 0.32nm~3.8nm, γ is 0.03~0.12, and its doping concentration is 6.25×10 18 cm -3 ~3.67×10 19 cm -3;

[0021] The period number of the sixth superlattice layer is 3 to 10, the thickness of the first Mg-doped GaN layer is 0.32 nm to 3.8 nm, and the doping concentration is 2.35×10 18 cm -3 ~8.66×10 18 cm -3 ; The Mg doped with In δ Ga 1-δ The thickness of the N layer is 0.32nm~3.8nm, δ is 0.05~0.15, and its doping concentration is 1.16×10 19 cm -3 ~5.69×10 19 cm -3 .

[0022] As an improvement of the above technical solution, along the growth direction of the light emitting diode epitaxial wafer, the Mg doped Al a In b Ga 1-a-b The Al component and doping concentration in the N layer decrease;

[0023] Along the growth direction of the light emitting diode epitaxial wafer, the doping concentration of the second Mg-doped GaN layer decreases.

[0024] As an improvement of the above technical solution, a is 0.15 to 0.3, and b is 0.02 to 0.08.

[0025] As an improvement of the above technical solution, the buffer layer is an AlN layer with a thickness of 10nm to 50nm;

[0026] The N-type semiconductor layer is an N-type GaN layer with a thickness of 1 μm to 3 μm and a Si doping concentration of 1×10 18 cm -3 ~5×10 19 cm -3 ;

[0027] The multi-quantum well layer includes alternately stacked InGaN quantum well layers and GaN quantum barrier layers. The thickness of the InGaN quantum well layer is 2nm to 5nm, and the In component ratio is 0.1 to 0.4; the thickness of the GaN quantum barrier layer is 5nm to 15nm.

[0028] Correspondingly, the present invention also discloses a method for preparing a light-emitting diode epitaxial wafer, which is used to prepare the above-mentioned light-emitting diode epitaxial wafer, and comprises:

[0029] Providing a substrate, and sequentially growing a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a first electron blocking layer, a first P-type semiconductor layer, a second electron blocking layer, and a second P-type semiconductor layer on the substrate;

[0030] Wherein, the first electron blocking layer and the second electron blocking layer are both single-layer or multi-layer structures formed of AlGaInN material, and the barrier height of the first electron blocking layer is greater than the barrier height of the second electron blocking layer;

[0031] The first P-type semiconductor layer is a single-layer or multi-layer structure formed by Mg-doped AlGaInN material, the second P-type semiconductor layer is a single-layer or multi-layer structure formed by Mg-doped GaN material, and the doping concentration of the first P-type semiconductor layer is greater than the doping concentration of the second P-type semiconductor layer.

[0032] As an improvement of the above technical solution, the first electron blocking layer includes a first superlattice layer, a second superlattice layer and a third superlattice layer sequentially stacked on the multi-quantum well layer;

[0033] The first superlattice layer includes an AlN layer and a first GaN layer alternately stacked, the AlN layer is grown at a temperature of 880°C to 1060°C and a growth pressure of 30 torr to 400 torr; the first GaN layer is grown at a temperature of 880°C to 1060°C and a growth pressure of 30 torr to 400 torr;

[0034] The second superlattice layer includes alternately stacked Al w Ga 1-w N layer and the second GaN layer, the Al w Ga 1-w The growth temperature of the N layer is 880° C. to 1060° C., and the growth pressure is 30 torr to 400 torr; the growth temperature of the second GaN layer is 880° C. to 1060° C., and the growth pressure is 30 torr to 400 torr;

[0035] The third superlattice layer includes alternately stacked Al x Ga 1-x N layer and Mg doped with In α Ga 1-α N layer; the Al x Ga 1-x The growth temperature of the N layer is 880℃~1060℃, and the growth pressure is 30torr~400torr; the Mg doped In α Ga 1-α The growth temperature of the N layer is 830℃~980℃, and the growth pressure is 30torr~400torr;

[0036] The first P-type semiconductor layer is Mg doped with Al a In b Ga 1-a-b N layer; its growth temperature is 710℃~860℃, and its growth pressure is 30torr~650torr;

[0037] The second electron blocking layer includes a fourth superlattice layer, a fifth superlattice layer and a sixth superlattice layer sequentially stacked on the first P-type semiconductor layer;

[0038] Wherein, the fourth superlattice layer comprises alternately stacked Al y Ga 1-y N layer and Mg doped with In β Ga 1-β N layer; the Al y Ga 1-y The growth temperature of the N layer is 880℃~1060℃, and the growth pressure is 30torr~400torr; the Mg doped In β Ga 1-β The growth temperature of the N layer is 830℃~1030℃, and the growth pressure is 30torr~400torr;

[0039] The fifth superlattice layer includes alternately stacked Al z Ga 1-z N layer and Mg doped with In γ Ga 1-γ N layer, the Al z Ga 1-z The growth temperature of the N layer is 880℃~1060℃, and the growth pressure is 30torr~400torr; the Mg doped In γ Ga 1-γ The growth temperature of the N layer is 830℃~1030℃, and the growth pressure is 30torr~400torr;

[0040] The sixth superlattice layer includes first Mg-doped GaN layers and Mg-doped In layers alternately stacked δ Ga 1-δ N layer; the growth temperature of the first Mg-doped GaN layer is 880 ℃ ~ 1060 ℃, and the growth pressure is 30torr ~ 400torr; the Mg-doped In δ Ga 1-δ The growth temperature of the N layer is 830℃~1030℃, and the growth pressure is 30torr~400torr;

[0041] The second P-type semiconductor layer is a second Mg-doped GaN layer; its growth temperature is 880° C. to 1060° C., and its growth pressure is 300 torr to 650 torr.

[0042] The implementation of the present invention has the following beneficial effects:

[0043] In one embodiment of the present invention, a light-emitting diode epitaxial wafer comprises a first electron blocking layer, a first P-type semiconductor layer, a second electron blocking layer, and a second P-type semiconductor layer, sequentially disposed on a multi-quantum well layer. The first and second electron blocking layers are each formed of a single or multi-layer AlGaInN material, and the barrier height of the first electron blocking layer is greater than that of the second electron blocking layer. The first P-type semiconductor layer is a single or multi-layer Mg-doped AlGaInN material, and the second P-type semiconductor layer is a single or multi-layer Mg-doped GaN material, with the doping concentration of the first P-type semiconductor layer being greater than the doping concentration of the second P-type semiconductor layer. This structure significantly reduces the barrier effect of the first and second electron blocking layers on hole injection into the multi-quantum well layer, improving hole injection efficiency. Furthermore, the use of the first P-type semiconductor layer, which has a higher doping concentration, as the primary functional layer for hole supply can increase the hole concentration and the efficiency of hole injection into the multi-quantum well layer, thereby improving the luminous efficiency of the light-emitting diode based on this light-emitting diode epitaxial wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 1 is a schematic structural diagram of a light emitting diode epitaxial wafer according to an embodiment of the present invention;

[0045] Figure 2 This is a flow chart of a method for preparing a light-emitting diode epitaxial wafer in one embodiment of the present invention.

[0046] 100 is a substrate, 200 is a buffer layer, 300 is an undoped semiconductor layer, 400 is an N-type semiconductor layer, 500 is a multi-quantum well layer, 600 is a first electron blocking layer, 610 is a first superlattice layer, 611 is an AlN layer, 612 is a first GaN layer, 620 is a second superlattice layer, 621 is an AlN layer, w Ga 1-w N layer, 622 is the second GaN layer, 630 is the third superlattice layer, 631 is Al x Ga 1-x N layer, 632 is Mg doped with In α Ga 1-α N layer, 700 is the first P-type semiconductor layer, 800 is the second electron blocking layer, 810 is the fourth superlattice layer, 811 is Al y Ga 1-y N layer, 812 is Mg doped with In β Ga 1-β N layer, 820 is the fifth superlattice layer, 821 is Al z Ga 1-z N layer, 822 is Mg doped with Inγ Ga 1-γ N layer, 830 is the sixth superlattice layer, 831 is the first Mg-doped GaN layer, 832 is Mg-doped In δ Ga 1-δ The N layer 900 is a second P-type semiconductor layer. DETAILED DESCRIPTION

[0047] In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention is described in further detail below.

[0048] See also Figure 1 An embodiment of the present invention discloses a light-emitting diode epitaxial wafer, which includes a substrate 100, a buffer layer 200, an N-type semiconductor layer 400, a multi-quantum well layer 500, a first electron blocking layer 600, a first P-type semiconductor layer 700, a second electron blocking layer 800 and a second P-type semiconductor layer 900 stacked in sequence on the substrate 100.

[0049] The first electron blocking layer 600 and the second electron blocking layer 800 are both single-layer or multi-layer structures formed of AlGaInN material, and the barrier height of the first electron blocking layer 600 is greater than the barrier height of the second electron blocking layer 800. The first P-type semiconductor layer 700 is a single-layer or multi-layer structure formed of Mg-doped AlGaInN material, and the second P-type semiconductor layer 900 is a single-layer or multi-layer structure formed of Mg-doped GaN material. The doping concentration of the first P-type semiconductor layer 700 is greater than the doping concentration of the second P-type semiconductor layer 900. Based on this structure, one can significantly weaken the barrier effect of the first electron blocking layer 600 and the second electron blocking layer 800 on hole injection into the multi-quantum well layer 500, thereby improving the hole injection efficiency. Both use the first P-type semiconductor layer 700 with a higher doping concentration as the main functional layer for providing holes, which can increase the hole concentration and the efficiency of hole injection into the multi-quantum well layer 500.

[0050] Preferably, in one embodiment, the first electron blocking layer 600 includes a first superlattice layer 610 , a second superlattice layer 620 and a third superlattice layer 630 sequentially stacked on the multi-quantum well layer 500 .

[0051] The first superlattice layer 610 includes an AlN layer 611 and a first GaN layer 612 alternately stacked, and the second superlattice layer 620 includes an AlN layer 611 and a first GaN layer 612 alternately stacked. w Ga 1-w The N layer 621 and the second GaN layer 622, the third superlattice layer 630 includes an alternately stacked Al x Ga 1-x N layer 631 and Mg doped In α Ga 1-α N layer 632; the first P-type semiconductor layer 700 is Mg doped Ala In b Ga 1-a-b N layer; the second electron blocking layer 800 includes a fourth superlattice layer 810, a fifth superlattice layer 820 and a sixth superlattice layer 830 sequentially stacked on the first P-type semiconductor layer 700; the fourth superlattice layer 810 includes an alternately stacked Al y Ga 1-y N layer 811 and Mg doped with In β Ga 1-β N layer 812; the fifth superlattice layer 820 includes an alternately stacked Al z Ga 1-z N layer 821 and Mg doped with In γ Ga 1-γ N layer 822, the sixth superlattice layer 830 includes a first Mg-doped GaN layer 831 and a Mg-doped In layer 832 alternately stacked δ Ga 1-δ N layer 832; the second P-type semiconductor layer 900 is a second Mg-doped GaN layer; and w≥x≥y≥z>a, α≤β≤γ≤δ. Among them, the wide bandgap AlN material (AlN layer 611) and AlGaN material (Al in the first electron blocking layer 600 and the second electron blocking layer 800 are w Ga 1-w N layer 621, Al x Ga 1-x N layer 631, Al y Ga 1- y N layer 811 and Al z Ga 1-z The N layer 821) mainly blocks electrons and reduces the electron mobility, preventing electrons from being injected into the P-type material and causing electron leakage. The GaN material in the first electron blocking layer 600 and the second electron blocking layer 800 (the first GaN layer 612, the second GaN layer 622, the first Mg-doped GaN layer 831), the InGaN material (Mg-doped InGaN) α Ga 1-α N layer 632, Mg doped with In β Ga 1-β N layer 812, Mg doped with In γ Ga 1-γ N layer 822, Mg doped with In δ Ga 1-δ The N layer 832) can store some holes and reduce the blocking effect on holes, thereby improving the efficiency of hole injection into the multi-quantum well layer 500. a In b Ga 1-a-bUsing an N layer as the first P-type semiconductor layer 700 can improve the activation efficiency of Mg and increase the hole concentration. Using a second Mg-doped GaN layer as the second P-type semiconductor layer 900 can merge defects, obtain high-quality materials, and thus improve the brightness and yield of the LED epitaxial wafer.

[0052] Specifically, in one embodiment, the period number of the first superlattice layer 610 is 1 to 3, the thickness of the AlN layer 611 is 0.36 nm to 2.9 nm, and the thickness of the first GaN layer 612 is 0.6 nm to 5.8 nm.

[0053] Specifically, in one embodiment, the period number of the second superlattice layer 620 is 2 to 5, and Al w Ga 1-w The thickness of the N layer 621 is 0.36 nm to 3.6 nm, and w is 0.5 to 0.8; the thickness of the second GaN layer 622 is 0.36 nm to 3.6 nm.

[0054] Specifically, in one embodiment, the period number of the third superlattice layer 630 is 2 to 6, and Al x Ga 1-x The thickness of the N layer 631 is 0.36nm to 3.6nm, and x is 0.35 to 0.68; Mg is doped with In α Ga 1-α The thickness of the N layer 632 is 0.36 nm to 3.6 nm, α is 0.02 to 0.08, and the doping concentration is 2.16×10 18 cm -3 ~2.53×10 19 cm -3 .

[0055] Specifically, in one embodiment, Mg doped with Al a In b Ga 1-a-b The thickness of the N layer is 8nm~210nm, a≤0.32, b≤0.09, and the doping concentration is 1.2×10 19 cm -3 ~3.05×10 20 cm -3 ; Preferably, a is 0.15 to 0.3, and b is 0.02 to 0.08.

[0056] Specifically, in one embodiment, the period number of the fourth superlattice layer 810 is 2 to 5, and Al y Ga 1-y The thickness of the N layer 811 is 0.32nm to 3.8nm, and y is 0.3 to 0.6; Mg is doped with In β Ga 1-βThe thickness of the N layer 812 is 0.32 nm to 3.8 nm, β is 0.02 to 0.09, and its doping concentration is 3.51×10 18 cm -3 ~2.87×10 19 cm -3 .

[0057] Specifically, in one embodiment, the period number of the fifth superlattice layer 820 is 2 to 7, and Al z Ga 1-z The thickness of the N layer 821 is 0.32nm to 3.8nm, and z is 0.2 to 0.5; Mg is doped with In γ Ga 1-γ The thickness of the N layer 822 is 0.32 nm to 3.8 nm, γ is 0.03 to 0.12, and its doping concentration is 6.25×10 18 cm -3 ~3.67×10 19 cm -3 .

[0058] Specifically, in one embodiment, the period number of the sixth superlattice layer 830 is 3 to 10, the thickness of the first Mg-doped GaN layer 831 is 0.32 nm to 3.8 nm, and the doping concentration thereof is 2.35×10 18 cm -3 ~8.66×10 18 cm -3 Mg doped with In δ Ga 1-δ The thickness of the N layer 832 is 0.32 nm to 3.8 nm, δ is 0.05 to 0.15, and its doping concentration is 1.16×10 19 cm -3 ~5.69×10 19 cm -3 .

[0059] Specifically, in one embodiment, the thickness of the second Mg-doped GaN layer is 3.5 nm to 120 nm, and the doping concentration is 1.06×10 19 cm -3 ~8.76×10 19 cm -3 .

[0060] Preferably, in one embodiment, along the growth direction of the light emitting diode epitaxial wafer, Mg doped Al a In b Ga 1-a-b The Al component and doping concentration in the N layer decrease gradually. Based on this implementation, the Mg activation efficiency can be further improved and the hole concentration can be increased.

[0061] Preferably, in one embodiment, the doping concentration of the second Mg-doped GaN layer decreases along the growth direction of the light-emitting diode epitaxial wafer. Based on this implementation, defects can be better filled, crystal quality can be improved, and luminous efficiency can be improved.

[0062] Specifically, the substrate 100 is a sapphire substrate or a silicon substrate, but is not limited thereto.

[0063] Specifically, the buffer layer 200 is an AlN layer, a GaN layer, or an AlGaN layer, but is not limited thereto. The buffer layer 200 has a thickness of 10 nm to 80 nm, but is not limited thereto. Preferably, in one embodiment, the buffer layer 200 is an AlN layer with a thickness of 10 nm to 50 nm.

[0064] Specifically, the N-type semiconductor layer 400 is an N-type GaN layer or an N-type AlGaN layer, but is not limited thereto. Preferably, in one embodiment, the N-type semiconductor layer 400 is an N-type GaN layer, and its doping element is Si, but is not limited thereto. The doping concentration of Si in the N-type GaN layer is 1×10 18 cm -3 ~5×10 19 cm -3 , and its thickness is 1μm~3μm.

[0065] Specifically, the multi-quantum well layer 500 is an InGaN-GaN multi-quantum well layer, an InGaN-AlGaN multi-quantum well layer, or an AlGaN-AlGaN multi-quantum well layer, but is not limited thereto. Preferably, in one embodiment, the multi-quantum well layer 500 has a periodic structure with 3 to 15 periods, and each period includes sequentially stacked InGaN quantum well layers and GaN quantum barrier layers. The In component ratio in the InGaN quantum well layer is 0.1 to 0.4, and its thickness is 2 nm to 5 nm. The thickness of the GaN quantum barrier layer is 5 nm to 15 nm.

[0066] Preferably, in one embodiment, the light-emitting diode epitaxial wafer further includes an undoped semiconductor layer 300, which is disposed between the buffer layer 200 and the N-type semiconductor layer 400. Specifically, the undoped semiconductor layer 300 may be an undoped GaN layer or an undoped AlGaN layer, but is not limited thereto. Preferably, in one embodiment, the undoped semiconductor layer 300 is an undoped GaN layer having a thickness of 1 μm to 5 μm.

[0067] Accordingly, see Figure 2 The present invention also provides a method for preparing a light-emitting diode epitaxial wafer, which is used to prepare the above-mentioned light-emitting diode epitaxial wafer, and specifically comprises the following steps:

[0068] S1: providing a substrate;

[0069] S2: sequentially growing a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a first electron blocking layer, a first P-type semiconductor layer, a second electron blocking layer, and a second P-type semiconductor layer on the substrate;

[0070] Specifically, in some embodiments of the present invention, step S2 includes:

[0071] S21: growing a buffer layer on the substrate;

[0072] Specifically, in one embodiment of the present invention, an AlN layer is grown by PVD as a buffer layer.

[0073] S22: growing a non-doped semiconductor layer on the buffer layer;

[0074] Specifically, in one embodiment of the present invention, an undoped GaN layer is grown by MOCVD as the undoped semiconductor layer, with a growth temperature of 1000° C. to 1200° C. and a growth pressure of 100 torr to 500 torr.

[0075] S23: growing an N-type semiconductor layer on the non-doped semiconductor layer;

[0076] Specifically, in one embodiment of the present invention, an N-type GaN layer is grown by MOCVD as the N-type semiconductor layer, with a growth temperature of 1100° C. to 1200° C. and a growth pressure of 100 torr to 500 torr.

[0077] S24: growing a multi-quantum well layer on the N-type semiconductor layer;

[0078] Specifically, in one embodiment, InGaN quantum well layers and GaN quantum barrier layers are periodically grown on the N-type semiconductor layer by MOCVD until a multi-quantum well layer is obtained.

[0079] The InGaN quantum well layer is grown at a temperature of 760°C to 850°C and a pressure of 50 torr to 300 torr. The GaN quantum barrier layer is grown at a temperature of 850°C to 950°C and a pressure of 50 torr to 300 torr.

[0080] S25: growing a first electron blocking layer on the multi-quantum well layer;

[0081] Specifically, in one embodiment, step S25 includes:

[0082] S251: growing a first superlattice layer on the multi-quantum well layer;

[0083] Specifically, in one embodiment, an AlN layer and a first GaN layer are periodically grown by MOCVD until a first superlattice layer is obtained. The AlN layer is grown at a temperature of 880°C to 1060°C and a pressure of 30 torr to 400 torr; the first GaN layer is grown at a temperature of 880°C to 1060°C and a pressure of 30 torr to 400 torr.

[0084] S252: growing a second superlattice layer on the first superlattice layer;

[0085] Specifically, in one embodiment, Al is grown periodically by MOCVD. w Ga 1-w N layer and the second GaN layer until the second superlattice layer is obtained. w Ga 1-w The growth temperature of the N layer is 880° C. to 1060° C., and the growth pressure is 30 torr to 400 torr; the growth temperature of the second GaN layer is 880° C. to 1060° C., and the growth pressure is 30 torr to 400 torr.

[0086] S253: growing a third superlattice layer on the second superlattice layer to obtain a first electron blocking layer;

[0087] Specifically, in one embodiment, Al is grown periodically by MOCVD. x Ga 1-x N layer and Mg doped with In α Ga 1-α N layer until the third superlattice layer is obtained. x Ga 1-x The growth temperature of the N layer is 880℃~1060℃, and the growth pressure is 30torr~400torr; Mg doped with In α Ga 1-α The growth temperature of the N layer is 830° C. to 980° C., and the growth pressure is 30 torr to 400 torr.

[0088] S26: growing a first P-type semiconductor layer on the first electron blocking layer;

[0089] Specifically, in one embodiment, Mg-doped Al is grown by MOCVD. a In b Ga 1-a-b The N layer, serving as the first P-type semiconductor layer, has a growth temperature of 710° C. to 860° C. and a growth pressure of 30 Torr to 650 Torr.

[0090] S27: growing a second electron blocking layer on the first P-type semiconductor layer;

[0091] Specifically, in one embodiment, S27 includes the following steps:

[0092] S271: growing a fourth superlattice layer on the first P-type semiconductor layer;

[0093] Specifically, in one embodiment, Al is grown periodically by MOCVD. y Ga 1-y N layer and Mg doped with In β Ga 1-β N layer until the fourth superlattice layer is obtained. y Ga 1-y The growth temperature of the N layer is 880℃~1060℃, and the growth pressure is 30torr~400torr; Mg doped with In β Ga 1-β The growth temperature of the N layer is 830° C. to 1030° C., and the growth pressure is 30 torr to 400 torr.

[0094] S272: growing a fifth superlattice layer on the fourth superlattice layer;

[0095] Specifically, in one embodiment, Al is grown periodically by MOCVD. z Ga 1-z N layer and Mg doped with In γ Ga 1-γ N layers until the fifth superlattice layer is obtained. z Ga 1-z The growth temperature of the N layer is 880℃~1060℃, and the growth pressure is 30torr~400torr; Mg doped with In γ Ga 1-γ The growth temperature of the N layer is 830° C. to 1030° C., and the growth pressure is 30 torr to 400 torr.

[0096] S273: growing a sixth superlattice layer on the fifth superlattice layer to obtain a second electron blocking layer;

[0097] Specifically, in one embodiment, the first Mg-doped GaN layer and the Mg-doped In layer are periodically grown by MOCVD. δ Ga 1-δ N layer until the sixth superlattice layer is obtained, wherein the growth temperature of the first Mg-doped GaN layer is 880℃~1060℃ and the growth pressure is 30torr~400torr; Mg-doped In δ Ga 1-δ The growth temperature of the N layer is 830° C. to 1030° C., and the growth pressure is 30 torr to 400 torr.

[0098] S28: growing a second P-type semiconductor layer on the second electron blocking layer;

[0099] Specifically, in one embodiment, a second Mg-doped GaN layer is grown by MOCVD as the second P-type semiconductor layer, with a growth temperature of 880° C. to 1060° C. and a growth pressure of 300 torr to 650 torr.

[0100] The present invention will be further described below with specific embodiments:

[0101] Example 1

[0102] This embodiment provides a light-emitting diode epitaxial wafer, which includes a substrate, a buffer layer, an undoped semiconductor layer, an N-type semiconductor layer, a multi-quantum well layer, a first electron blocking layer, a first P-type semiconductor layer, a second electron blocking layer, and a second P-type semiconductor layer stacked in sequence on the substrate.

[0103] The substrate is a sapphire substrate. The buffer layer is an AlN layer with a thickness of 30 nm. The non-doped semiconductor layer is a non-doped GaN layer with a thickness of 2.5 μm. The N-type semiconductor layer is an N-type GaN layer with a thickness of 2 μm and a Si doping concentration of 1×10 19 cm -3 The multi-quantum well layer includes alternating InGaN quantum well layers and GaN quantum barrier layers, with a period of 10. The In component ratio of the InGaN quantum well layer is 0.2, its thickness is 3nm, and the thickness of the GaN quantum barrier layer is 10nm.

[0104] The first electron blocking layer includes a first superlattice layer, a second superlattice layer, and a third superlattice layer stacked sequentially on the multi-quantum well layer; the first superlattice layer includes an AlN layer and a first GaN layer stacked alternately, with a period of 2. The thickness of the AlN layer is 2nm, and the thickness of the first GaN layer is 5nm. The second superlattice layer includes an AlN layer stacked alternately. w Ga 1-w N layer (w = 0.75) and the second GaN layer, the period number is 4, Al w Ga 1-w The thickness of the N layer is 2nm, and the thickness of the second GaN layer is 3nm. The third superlattice layer includes alternately stacked Al x Ga 1-x N layer (x = 0.65) and Mg doped In α Ga 1-α N layer (α = 0.03), the number of cycles is 5, Al x Ga 1-x The thickness of the N layer is 2nm, and the Mg is doped with In α Ga 1-α The thickness of the N layer is 3 nm and the doping concentration is 3.5×1018 cm -3 .

[0105] Among them, the first P-type semiconductor layer is Mg doped Al a In b Ga 1-a-b The N layer (a = 0.2, b = 0.05) has a thickness of 150 nm and a doping concentration of 1.5 × 10 20 cm -3 .

[0106] The second electron blocking layer includes a fourth superlattice layer, a fifth superlattice layer and a sixth superlattice layer sequentially stacked on the first P-type semiconductor layer; the fourth superlattice layer includes an alternately stacked Al y Ga 1-y N layer (y = 0.55) and Mg doped In β Ga 1-β N layer (β = 0.05), the number of cycles is 4, Al y Ga 1-y The thickness of the N layer is 2.5 nm, and the Mg is doped with In β Ga 1-β The thickness of the N layer is 3 nm and its doping concentration is 5.5×10 18 cm -3 The fifth superlattice layer includes alternately stacked Al z Ga 1-z N layer (z = 0.4) and Mg doped In γ Ga 1-γ N layer (γ=0.1), period number is 5, Al z Ga 1-z The thickness of the N layer is 2nm, and the Mg is doped with In γ Ga 1-γ The thickness of the N layer is 3 nm and its doping concentration is 8.5×10 18 cm -3 The sixth superlattice layer includes a first Mg-doped GaN layer and a Mg-doped In layer alternately stacked δ Ga 1-δ N layer (δ=0.12), the period number is 8, the thickness of the first Mg-doped GaN layer is 3nm, and its doping concentration is 6.5×10 18 cm -3 Mg doped with In δ Ga 1-δ The thickness of the N layer is 2.2 nm, and its doping concentration is 2.2×10 19 cm -3 .

[0107] The second P-type semiconductor layer is a second Mg-doped GaN layer with a thickness of 50 nm and a doping concentration of 5.6×1019 cm -3 .

[0108] The method for preparing a light-emitting diode epitaxial wafer in this embodiment includes the following steps:

[0109] (1) providing a substrate;

[0110] (2) growing a buffer layer on the substrate;

[0111] Specifically, an AlN layer is grown by PVD to serve as a buffer layer.

[0112] (3) growing a non-doped semiconductor layer on the buffer layer;

[0113] Specifically, a non-doped GaN layer is grown by MOCVD. As the non-doped GaN layer, the growth temperature is 1080° C. and the growth pressure is 300 Torr.

[0114] (4) growing an N-type semiconductor layer on the non-doped semiconductor layer;

[0115] Specifically, an N-type GaN layer is grown by MOCVD as the N-type semiconductor layer, with a growth temperature of 1180° C. and a growth pressure of 400 Torr.

[0116] (5) growing a multi-quantum well layer on the N-type semiconductor layer;

[0117] Specifically, InGaN quantum well layers and GaN quantum barrier layers are periodically grown on an N-type semiconductor layer using MOCVD until a multi-quantum well layer is obtained. The InGaN quantum well layers are grown at a temperature of 780°C and a pressure of 200 Torr. The GaN quantum barrier layers are grown at a temperature of 920°C and a pressure of 200 Torr.

[0118] (6) growing a first superlattice layer on the multi-quantum well layer;

[0119] Specifically, an AlN layer and a first GaN layer are periodically grown by MOCVD until the first superlattice layer is obtained. The AlN layer is grown at a temperature of 960°C and a pressure of 200 Torr, while the first GaN layer is grown at a temperature of 1020°C and a pressure of 200 Torr.

[0120] (7) growing a second superlattice layer on the first superlattice layer;

[0121] Specifically, Al is grown periodically by MOCVD. w Ga 1-w N layer and the second GaN layer until the second superlattice layer is obtained. w Ga 1-wThe growth temperature of the N layer is 1040° C. and the growth pressure is 200 torr; the growth temperature of the second GaN layer is 920° C. and the growth pressure is 200 torr.

[0122] (8) growing a third superlattice layer on the second superlattice layer to obtain a first electron blocking layer;

[0123] Specifically, Al is grown periodically by MOCVD. x Ga 1-x N layer and Mg doped with In α Ga 1-α N layer until the third superlattice layer is obtained. x Ga 1-x The growth temperature of the N layer is 1030℃ and the growth pressure is 200torr; Mg doped with In α Ga 1-α The growth temperature of the N layer is 880°C and the growth pressure is 200 torr.

[0124] (9) growing a first P-type semiconductor layer on the first electron blocking layer;

[0125] Specifically, Mg-doped Al is grown by MOCVD. a In b Ga 1-a-b The N layer, serving as the first P-type semiconductor layer, has a growth temperature of 830° C. and a growth pressure of 600 Torr.

[0126] (10) growing a fourth superlattice layer on the first P-type semiconductor layer;

[0127] Specifically, Al is grown periodically by MOCVD. y Ga 1-y N layer and Mg doped with In β Ga 1-β N layer until the fourth superlattice layer is obtained. y Ga 1-y The growth temperature of the N layer is 960℃ and the growth pressure is 200torr; Mg doped with In β Ga 1-β The growth temperature of the N layer is 880°C and the growth pressure is 200 torr.

[0128] (11) growing a fifth superlattice layer on the fourth superlattice layer;

[0129] Specifically, Al is grown periodically by MOCVD. z Ga 1-z N layer and Mg doped with In γ Ga 1-γ N layers until the fifth superlattice layer is obtained.z Ga 1-z The growth temperature of the N layer is 1030℃ and the growth pressure is 300torr; Mg doped with In γ Ga 1-γ The growth temperature of the N layer is 850°C and the growth pressure is 300 torr.

[0130] (12) growing a sixth superlattice layer on the fifth superlattice layer to obtain a second electron blocking layer;

[0131] Specifically, the first Mg-doped GaN layer and the Mg-doped In layer are periodically grown by MOCVD. δ Ga 1-δ N layer until the sixth superlattice layer is obtained, wherein the growth temperature of the first Mg-doped GaN layer is 1040°C and the growth pressure is 200 torr; the Mg-doped In layer is 1040°C and the growth pressure is 200 torr; δ Ga 1-δ The growth temperature of the N layer is 840°C and the growth pressure is 200 torr;

[0132] (13) growing a second P-type semiconductor layer on the second electron blocking layer;

[0133] Specifically, a second Mg-doped GaN layer is grown by MOCVD as the second P-type semiconductor layer at a growth temperature of 1040° C. and a growth pressure of 500 Torr.

[0134] Example 2

[0135] This embodiment provides a light-emitting diode epitaxial wafer, which differs from the first embodiment in that:

[0136] Along the growth direction of the LED epitaxial wafer, Mg doped Al a In b Ga 1-a-b The Al composition and doping concentration in the N layer decrease linearly.

[0137] The rest are the same as in Example 1.

[0138] Example 3

[0139] This embodiment provides a light-emitting diode epitaxial wafer, which differs from the second embodiment in that:

[0140] Along the growth direction of the light emitting diode epitaxial wafer, the doping concentration of the second Mg-doped GaN layer changes linearly and gradually.

[0141] The rest are the same as in Example 2.

[0142] Comparative Example 1

[0143] This comparative example provides a light-emitting diode epitaxial wafer, which differs from Example 1 in that:

[0144] The electron blocking layer and the P-type GaN layer are provided on the multi-quantum well layer. The electron blocking layer is an AlGaN layer with a thickness of 50nm and an Al component ratio of 0.55. The thickness of the P-type GaN layer is 200nm and the Mg doping concentration is 3.5×10 20 cm -3 .

[0145] The electron blocking layer is grown by MOCVD at a growth temperature of 1020°C and a growth pressure of 300 torr; the P-type GaN layer is grown at a temperature of 980°C and a growth pressure of 400 torr.

[0146] The rest are the same as in Example 1.

[0147] The light-emitting diode epitaxial wafers obtained in Examples 1 to 3 and Comparative Example 1 were fabricated into chips with a 10 mil × 24 mil upright structure. The luminous brightness was measured at 120 mA, and the brightness improvement rate was calculated using the data from Comparative Example 1 as a benchmark. The specific results are shown in the following table:

[0148] Brightness increase rate / % Example 1 0.78 Example 2 1.12 Example 3 1.33 Comparative Example 1 -

[0149] The above is a preferred embodiment of the invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the invention. These improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A light-emitting diode epitaxial wafer, characterized in that: The method comprises a substrate, a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a first electron blocking layer, a first P-type semiconductor layer, a second electron blocking layer and a second P-type semiconductor layer sequentially stacked on the substrate; The first electron blocking layer includes a first superlattice layer, a second superlattice layer and a third superlattice layer sequentially stacked on the multi-quantum well layer; The first superlattice layer includes an AlN layer and a first GaN layer stacked alternately, and the second superlattice layer includes an Al w Ga 1-w N layer and a second GaN layer, the third superlattice layer includes an alternately stacked Al x Ga 1-x N layer and Mg doped with In α Ga 1-α N-layer; The first P-type semiconductor layer is Mg doped with Al a In b Ga 1-a-b N-layer; The second electron blocking layer includes a fourth superlattice layer, a fifth superlattice layer and a sixth superlattice layer sequentially stacked on the first P-type semiconductor layer; Wherein, the fourth superlattice layer comprises alternately stacked Al y Ga 1-y N layer and Mg doped with In β Ga 1-β N layer; the fifth superlattice layer includes alternately stacked Al z Ga 1-z N layer and Mg doped with In γ Ga 1-γ N layer, the sixth superlattice layer includes first Mg-doped GaN layers and Mg-doped In layers alternately stacked δ Ga 1-δ N-layer; The second P-type semiconductor layer is a second Mg-doped GaN layer; w≥x≥y≥z>a, α≤β≤γ≤δ; The barrier height of the first electron blocking layer is greater than the barrier height of the second electron blocking layer; and the doping concentration of the first P-type semiconductor layer is greater than the doping concentration of the second P-type semiconductor layer.

2. The light emitting diode epitaxial wafer according to claim 1, wherein: The period number of the first superlattice layer is 1 to 3, the thickness of the AlN layer is 0.36 nm to 2.9 nm, and the thickness of the first GaN layer is 0.6 nm to 5.8 nm; The period number of the second superlattice layer is 2 to 5, and the Al w Ga 1-w The thickness of the N layer is 0.36nm~3.6nm, and w is 0.5~0.8; the thickness of the second GaN layer is 0.36nm~3.6nm; The period number of the third superlattice layer is 2 to 6, and the Al x Ga 1-x The thickness of the N layer is 0.36nm~3.6nm, and x is 0.35~0.68; the Mg doped In α Ga 1-α The thickness of the N layer is 0.36nm~3.6nm, α is 0.02~0.08, and the doping concentration is 2.16×10 18 cm -3 ~2.53×10 19 cm -3 .

3. The light emitting diode epitaxial wafer according to claim 1, wherein: The Mg doped Al a In b Ga 1-a-b The thickness of the N layer is 8nm~210nm, a≤0.32, b≤0.09, and the doping concentration is 1.2×10 19 cm -3 ~3.05×10 20 cm -3 ; The thickness of the second Mg-doped GaN layer is 3.5 nm to 120 nm, and the doping concentration is 1.06×10 19 cm -3 ~8.76×10 19 cm -3 .

4. The light emitting diode epitaxial wafer according to claim 1, wherein: The period number of the fourth superlattice layer is 2 to 5, and the Al y Ga 1-y The thickness of the N layer is 0.32nm~3.8nm, y is 0.3~0.6; the Mg doped In β Ga 1-β The thickness of the N layer is 0.32nm~3.8nm, β is 0.02~0.09, and its doping concentration is 3.51×10 18 cm -3 ~2.87×10 19 cm -3 ; The period number of the fifth superlattice layer is 2 to 7, and the Al z Ga 1-z The thickness of the N layer is 0.32nm~3.8nm, z is 0.2~0.5; Mg is doped with In γ Ga 1-γ The thickness of the N layer is 0.32nm~3.8nm, γ is 0.03~0.12, and its doping concentration is 6.25×10 18 cm -3 ~3.67×10 19 cm -3 ; The period number of the sixth superlattice layer is 3 to 10, the thickness of the first Mg-doped GaN layer is 0.32 nm to 3.8 nm, and the doping concentration is 2.35×10 18 cm -3 ~8.66×10 18 cm -3 ; The Mg doped with In δ Ga 1-δ The thickness of the N layer is 0.32nm~3.8nm, δ is 0.05~0.15, and its doping concentration is 1.16×10 19 cm -3 ~5.69×10 19 cm -3 .

5. The light emitting diode epitaxial wafer according to claim 1, wherein: Along the growth direction of the light emitting diode epitaxial wafer, the Mg doped Al a In b Ga 1-a-b The Al component and doping concentration in the N layer decrease; Along the growth direction of the light emitting diode epitaxial wafer, the doping concentration of the second Mg-doped GaN layer decreases.

6. The light emitting diode epitaxial wafer according to claim 3, wherein: a is 0.15~0.3, b is 0.02~0.

08.

7. The light emitting diode epitaxial wafer according to any one of claims 1 to 6, wherein: The buffer layer is an AlN layer with a thickness of 10nm to 50nm; The N-type semiconductor layer is an N-type GaN layer with a thickness of 1 μm to 3 μm and a Si doping concentration of 1×10 18 cm -3 ~5×10 19 cm -3 ; The multi-quantum well layer includes alternately stacked InGaN quantum well layers and GaN quantum barrier layers, the thickness of the InGaN quantum well layer is 2nm-5nm, and the In component ratio is 0.1-0.4; the thickness of the GaN quantum barrier layer is 5nm-15nm.

8. A method for preparing a light-emitting diode epitaxial wafer, for preparing the light-emitting diode epitaxial wafer according to any one of claims 1 to 7, characterized in that: include: Providing a substrate, and sequentially growing a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a first electron blocking layer, a first P-type semiconductor layer, a second electron blocking layer, and a second P-type semiconductor layer on the substrate; Wherein, the first electron blocking layer comprises a first superlattice layer, a second superlattice layer and a third superlattice layer sequentially stacked on the multi-quantum well layer; The first superlattice layer includes an AlN layer and a first GaN layer stacked alternately, and the second superlattice layer includes an Al w Ga 1-w N layer and a second GaN layer, the third superlattice layer includes an alternately stacked Al x Ga 1-x N layer and Mg doped with In α Ga 1-α N-layer; The first P-type semiconductor layer is Mg doped with Al a In b Ga 1-a-b N-layer; The second electron blocking layer includes a fourth superlattice layer, a fifth superlattice layer and a sixth superlattice layer sequentially stacked on the first P-type semiconductor layer; Wherein, the fourth superlattice layer comprises alternately stacked Al y Ga 1-y N layer and Mg doped with In β Ga 1-β N layer; the fifth superlattice layer includes alternately stacked Al z Ga 1-z N layer and Mg doped with In γ Ga 1-γ N layer, the sixth superlattice layer includes first Mg-doped GaN layers and Mg-doped In layers alternately stacked δ Ga 1-δ N-layer; The second P-type semiconductor layer is a second Mg-doped GaN layer; w≥x≥y≥z>a, α≤β≤γ≤δ; The barrier height of the first electron blocking layer is greater than the barrier height of the second electron blocking layer; and the doping concentration of the first P-type semiconductor layer is greater than the doping concentration of the second P-type semiconductor layer.

9. The method for preparing a light emitting diode epitaxial wafer according to claim 8, wherein: The first electron blocking layer includes a first superlattice layer, a second superlattice layer and a third superlattice layer sequentially stacked on the multi-quantum well layer; The first superlattice layer includes an AlN layer and a first GaN layer alternately stacked, the AlN layer is grown at a temperature of 880°C to 1060°C and a growth pressure of 30 torr to 400 torr; the first GaN layer is grown at a temperature of 880°C to 1060°C and a growth pressure of 30 torr to 400 torr; The second superlattice layer includes alternately stacked Al w Ga 1-w N layer and the second GaN layer, the Al w Ga 1-w The growth temperature of the N layer is 880° C. to 1060° C., and the growth pressure is 30 torr to 400 torr; the growth temperature of the second GaN layer is 880° C. to 1060° C., and the growth pressure is 30 torr to 400 torr; The third superlattice layer includes alternately stacked Al x Ga 1-x N layer and Mg doped with In α Ga 1-α N layer; the Al x Ga 1-x The growth temperature of the N layer is 880℃~1060℃, and the growth pressure is 30torr~400torr; the Mg doped In α Ga 1-α The growth temperature of the N layer is 830℃~980℃, and the growth pressure is 30torr~400torr; The first P-type semiconductor layer is Mg doped with Al a In b Ga 1-a-b N layer; its growth temperature is 710℃~860℃, and its growth pressure is 30torr~650torr; The second electron blocking layer includes a fourth superlattice layer, a fifth superlattice layer and a sixth superlattice layer sequentially stacked on the first P-type semiconductor layer; Wherein, the fourth superlattice layer comprises alternately stacked Al y Ga 1-y N layer and Mg doped with In β Ga 1-β N layer; the Al y Ga 1-y The growth temperature of the N layer is 880℃~1060℃, and the growth pressure is 30torr~400torr; the Mg doped In β Ga 1-β The growth temperature of the N layer is 830℃~1030℃, and the growth pressure is 30torr~400torr; The fifth superlattice layer includes alternately stacked Al z Ga 1-z N layer and Mg doped with In γ Ga 1-γ N layer, the Al z Ga 1-z The growth temperature of the N layer is 880℃~1060℃, and the growth pressure is 30torr~400torr; the Mg doped In γ Ga 1-γ The growth temperature of the N layer is 830℃~1030℃, and the growth pressure is 30torr~400torr; The sixth superlattice layer includes first Mg-doped GaN layers and Mg-doped In layers alternately stacked δ Ga 1-δ N layer; the growth temperature of the first Mg-doped GaN layer is 880°C~1060°C, and the growth pressure is 30torr~400torr; the Mg-doped In δ Ga 1-δ The growth temperature of the N layer is 830℃~1030℃, and the growth pressure is 30torr~400torr; The second P-type semiconductor layer is a second Mg-doped GaN layer; the growth temperature thereof is 880° C. to 1060° C., and the growth pressure is 300 torr to 650 torr.

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