Semiconductor polishing pre-cleaning equipment

Abstract

The invention discloses semiconductor polishing pre-cleaning equipment which comprises a wafer disc, an adjusting assembly, an eddy current sensor and a processor, wafers are arranged on the wafer disc, a motor is arranged on the central axis of the wafer disc, and the motor is connected with the wafer disc; part of the adjusting assemblies are in contact with the wafer; the eddy current sensor is in communication connection with the processor, and the eddy current sensor is used for monitoring the thickness of a wafer and sending the monitored thickness of the wafer to the processor; the processor is connected with the adjusting assembly, and the processor is used for calculating the pressure value and position applied to the wafer by the adjusting assembly according to the wafer thickness, generating a control instruction and sending the control instruction to the adjusting assembly; the adjusting assembly is used for executing corresponding operation according to the control instruction; the thickness of the wafer is measured in real time by using the eddy current sensor, and the value of the pressure applied to the wafer is calculated by using the thickness of the wafer, so that the control precision of the pressure applied to each area of the wafer is improved.

Description

Technical Field

[0001] The invention relates to a semiconductor cleaning device, in particular to a semiconductor polishing pre-cleaning device. Background Art

[0002] In order to improve the edge defocusing problem of the shrinking device of the semiconductor photographic equipment, the CMP (chemical mechanical polishing) process was added; when performing the CMP process, the wafer is polished and pre-cleaned by scanning from the edge to the center of the wafer. The closer to the edge of the wafer, the smaller the energy density, resulting in incomplete cleaning of the edge of the wafer; the closer to the middle of the wafer, the greater the energy density, resulting in damage to the center structure of the wafer. Summary of the invention

[0003] The purpose of the present invention is to provide a semiconductor polishing pre-cleaning device, and the technical problem to be solved is to improve the pressure control accuracy applied to each area of ​​the wafer, improve the problem of incomplete cleaning of the edge part of the wafer and damage to the middle part of the wafer.

[0004] The present invention is achieved through the following technical solutions:

[0005] A semiconductor polishing pre-cleaning device, comprising: a wafer disk, an adjustment component, an eddy current sensor and a processor,

[0006] The wafer disk is used to place wafers, and the wafer disk rotates around the central axis of the wafer disk;

[0007] The eddy current sensor is communicatively connected to the processor, and the eddy current sensor is used to monitor the wafer thickness and send the monitored wafer thickness to the processor;

[0008] The processor is connected to the regulating component, and is used to calculate the pressure value and position applied by the regulating component to the wafer according to the wafer thickness, generate a control instruction, and send the control instruction to the regulating component;

[0009] Part of the above-mentioned adjustment components is in contact with the wafer, and the above-mentioned adjustment components are used to adjust the pressure value and position applied to the wafer according to the control instruction.

[0010] The wafer is in contact with the adjustment component. The wafer is set on a wafer disk. The wafer disk is connected to a motor, which is used to control the rotation of the wafer disk to perform polishing pre-cleaning treatment on the wafer. The eddy current sensor is used to measure the wafer thickness in real time. The wafer thickness is used to calculate the pressure value applied to the wafer by the adjustment component in the processor. The adjustment component adjusts the pressure applied to the wafer according to the pressure value, thereby improving the pressure control accuracy applied to each area of ​​the wafer and improving the problem of incomplete cleaning of the edge part of the wafer and damage to the middle part of the wafer.

[0011] Furthermore, the adjustment assembly includes a support arm and a pressure controller, the pressure controller is connected to the support arm, and the input end of the pressure controller is connected to the output end of the processor;

[0012] The processor is used to receive the wafer thickness monitored by the eddy current sensor, calculate the pressure value applied by the regulating component on the wafer according to the wafer thickness, and send the pressure value to the pressure controller;

[0013] The pressure controller is used to adjust the pressure applied to the wafer according to the pressure value.

[0014] Furthermore, the above-mentioned adjustment component also includes a polishing head, one end of the above-mentioned support arm extends to the central axis of the wafer disk, the above-mentioned polishing head is arranged at the end, the above-mentioned polishing head is in contact with the wafer, and the surface of the polishing head in contact with the above-mentioned wafer is used for polishing and pre-cleaning the wafer.

[0015] The support arm is connected to a pressure controller, and the pressure controller drives the support arm to move up and down, so that the contact force between the polishing head and the wafer changes, thereby controlling the pressure applied to the wafer.

[0016] Furthermore, the above-mentioned adjustment component also includes a first motor and a first driver. The above-mentioned first motor is electrically connected to the processor through the first driver. The rotating shaft of the above-mentioned first motor is arranged at the end of the support arm extending to the central axis of the wafer disk. The above-mentioned polishing head is connected to the support arm through the first motor, and the above-mentioned first motor is used to control the rotation of the polishing head.

[0017] The polishing head drives the first motor to move through the first driver, and the polishing head contacts the wafer. The distance between the polishing head and the wafer is adjusted by the pressure controller to change the pressure applied to the wafer. When the first motor drives the polishing head to rotate, friction occurs between the contact surface of the polishing head and the wafer to achieve polishing pre-cleaning.

[0018] Furthermore, the above-mentioned adjustment component also includes a second motor and a second driver, the above-mentioned second motor is electrically connected to the processor through the second driver, the other end of the above-mentioned support arm extends out of the wafer disk, the rotating shaft of the above-mentioned second motor is arranged at the end of the support arm extending out of the wafer disk, and the above-mentioned second motor is used to control the rotation of the support arm.

[0019] The support arm drives the second motor to move via a second driver. The second motor is disposed at the end of the support arm extending from the wafer disk. The second motor drives the support arm to rotate so that the end of the support arm extending to the central axis of the wafer disk rotates with the other end of the support arm as the center. The polishing head on the support arm moves on the wafer, and the surface of the wafer in contact with the polishing head is polished. A motor is disposed on the central axis of the wafer disk. The motor is connected to the wafer disk and is used to control the rotation of the wafer disk. While the wafer disk rotates, the support arm also reciprocates so that each area of ​​the wafer on the wafer disk can contact the polishing head for polishing.

[0020] Furthermore, the end of the support arm extending from the wafer disk is relatively stationary with respect to the central axis of the wafer disk.

[0021] During the rotation of the support arm and the wafer disk, the distance from the end of the support arm extending from the wafer disk to the central axis of the wafer disk will not change, ensuring that the polishing head on the support arm can contact each area on the wafer to achieve polishing pre-cleaning processing.

[0022] Furthermore, the pressure controller is arranged at the end of the support arm extending out of the wafer disk.

[0023] The pressure controller drives the support arm to move up and down, adjusts the distance between the polishing head and the wafer, and thus adjusts the pressure applied by the polishing head to the wafer.

[0024] Furthermore, the wafer disk is provided with fluid holes.

[0025] Furthermore, a polishing pad is provided on the surface of the polishing head in contact with the wafer.

[0026] The polishing pad is used to increase friction and perform polishing pre-cleaning treatment on the wafer surface.

[0027] Furthermore, the eddy current sensor is arranged on the polishing head.

[0028] When the polishing head performs pre-polishing and cleaning on the wafer, the eddy current sensor monitors the wafer thickness in real time and adjusts the pressure applied to the wafer in time, thereby improving the pressure control accuracy applied to each area of ​​the wafer and improving the problem of incomplete cleaning of the edge of the wafer and damage to the middle part of the wafer.

[0029] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0030] The wafer is in contact with the adjustment component. The wafer is set on a wafer disk. The wafer disk is connected to a motor, which is used to control the rotation of the wafer disk to polish the wafer. The eddy current sensor is used to measure the wafer thickness in real time. The wafer thickness is used to calculate the pressure value applied to the wafer by the adjustment component in the processor. The adjustment component adjusts the pressure applied to the wafer according to the pressure value, thereby improving the pressure control accuracy applied to each area of ​​the wafer and improving the problem of incomplete cleaning of the edge of the wafer and damage to the middle part of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and should not be regarded as limiting the scope. For those of ordinary skill in the art, other relevant drawings can be obtained based on these drawings without creative work. In the drawings:

[0032] Figure 1 It is a schematic diagram of the overall structure of a semiconductor polishing pre-cleaning device;

[0033] Figure 2 Schematic diagram of the polishing head structure;

[0034] Figure 3 Connection diagram of pre-cleaning equipment for semiconductor polishing.

[0035] Marks and corresponding parts names in the attached drawings:

[0036] 10-wafer disk, 11-wafer, 12-third motor, 13-third driver, 20-support arm, 21-pressure controller, 22-polishing head, 23-first motor, 24-second motor, 25-polishing pad, 26-eddy current sensor, 27-processor, 28-first driver, 29-second driver. DETAILED DESCRIPTION

[0037] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments and drawings. The exemplary embodiments of the present invention and their description are only used to explain the present invention and are not intended to limit the present invention.

[0038] Example 1

[0039] A semiconductor polishing pre-cleaning device includes: a wafer plate 10, an adjustment component, an eddy current sensor 26 and a processor 27,

[0040] The wafer 11 is arranged on the wafer disk 10, and a third motor 12 is arranged on the central axis of the wafer disk 10. The third motor 12 is electrically connected to the processor 27 through a third driver 13, and the control instruction sent by the processor 27 controls the wafer disk 10 to rotate around the central axis of the wafer disk 10;

[0041] The adjusting component is in contact with the wafer 11, and is used to apply pressure to the wafer 11 so that the wafer 11 tends to move away from the adjusting component;

[0042] The eddy current sensor 26 is in communication connection with the processor 27, and the eddy current sensor 26 is used to monitor the thickness of the wafer 11, and send the monitored thickness of the wafer 11 to the processor 27;

[0043] The processor 27 is connected to the adjustment component, and is used to calculate the pressure value and position applied by the adjustment component to the wafer 11 according to the thickness of the wafer 11, generate a control instruction, and send the control instruction to the adjustment component, and the adjustment component performs corresponding operations according to the control instruction.

[0044] The wafer 11 is in contact with the adjusting component. The wafer 11 is arranged on a wafer disk 10. The wafer disk 10 is connected to a motor, which is used to control the rotation of the wafer disk 10 and polish the wafer 11. The eddy current sensor 26 is used to measure the thickness of the wafer 11 in real time. The thickness of the wafer 11 is used to calculate the pressure value applied to the wafer 11 by the adjusting component in the processor 27. The adjusting component adjusts the pressure applied to the wafer 11 according to the pressure value, thereby improving the pressure control accuracy applied to each area of ​​the wafer 11 and improving the problem of incomplete cleaning of the edge portion of the wafer 11 and damage to the middle portion of the wafer 11.

[0045] In a specific embodiment, the adjustment assembly includes a support arm 20, a polishing head 22 and a pressure controller 21, wherein the pressure controller 21 is connected to the support arm 20, and an input end of the pressure controller 21 is connected to an output end of a processor 27;

[0046] The processor 27 is used to receive the thickness of the wafer 11 monitored by the eddy current sensor 26, calculate the pressure value applied to the wafer 11 according to the thickness of the wafer 11, and send the pressure value to the pressure controller 21. The pressure controller 21 adjusts the pressure according to the pressure value, improves the pressure applied by the adjustment component to the wafer 11 in real time, improves the pressure control accuracy applied to each area of ​​the wafer, and improves the problem of incomplete cleaning of the edge of the wafer and damage to the middle part of the wafer.

[0047] The support arm 20 includes a first end and a second end. The first end of the support arm 20 extends to the central axis of the wafer disk 10. The polishing head 22 is arranged at the first end. The polishing head 22 is in contact with the wafer 11. The surface of the polishing head 22 in contact with the wafer 11 is used for polishing and pre-cleaning the wafer 11.

[0048] The support arm 20 is connected to a pressure controller 21 . The pressure controller 21 drives the support arm 20 to move up and down, so that the contact force between the polishing head 22 and the wafer 11 changes, thereby controlling the pressure applied to the wafer 11 .

[0049] In a specific embodiment, the adjustment component further includes a first motor 23 and a first driver 28. The first motor 23 is electrically connected to the processor 27 via the first driver 28. The rotating shaft of the first motor 23 is disposed at the first end of the support arm 20. The polishing head 22 is connected to the support arm 20 via the first motor 23. The first motor 23 is used to control the rotation of the polishing head 22. The first motor 23 continues to rotate after the polishing head 22 contacts the wafer 11.

[0050] The polishing head 22 drives the first motor 23 to move through the first driver 28, and the polishing head 22 contacts the wafer 11. The distance between the polishing head 22 and the wafer 11 is adjusted by the pressure controller 21 to change the pressure applied to the wafer 11. When the first motor 23 drives the polishing head 22 to rotate, friction occurs between the contact surface of the polishing head 22 and the wafer 11 to achieve polishing pre-cleaning treatment.

[0051] In a specific embodiment, the adjustment component further includes a second motor 24 and a second driver 29, the second motor 24 is electrically connected to the processor 27 via the second driver 29, the rotating shaft of the second motor 24 is disposed at the second end of the support arm 20, and the second motor 24 is used to control the rotation angle of the support arm 20.

[0052] The support arm 20 drives the second motor 24 to move through the second driver 29. The second motor 24 is arranged at the end of the support arm 20 extending from the wafer disk 10. The second motor 24 drives the support arm 20 to rotate, so that the end of the support arm 20 extending to the central axis of the wafer disk 10 rotates with the other end of the support arm 20 as the center. The polishing head 22 on the support arm 20 moves on the wafer 11, and the surface of the wafer 11 in contact with the polishing head 22 is polished and pre-cleaned. A third motor 12 is arranged on the central axis of the wafer disk 10. The third motor 12 is connected to the wafer disk 10 and is used to control the rotation of the wafer disk 10. While the wafer disk 10 is rotating, the support arm 20 is also reciprocating, so that each area of ​​the wafer 11 on the wafer disk 10 can contact the polishing head 22 for polishing and pre-cleaning.

[0053] In a specific embodiment, the second end of the support arm 20 is relatively stationary with respect to the midpoint of the wafer disk 10 .

[0054] During the rotation of the support arm 20 and the wafer disk 10, the distance from the end of the support arm 20 extending from the wafer disk 10 to the central axis of the wafer disk 10 does not change, ensuring that the polishing head 22 on the support arm 20 can contact each area on the wafer 11 to achieve polishing pre-cleaning.

[0055] In a specific embodiment, the pressure controller 21 is disposed at the second end of the support arm 20 .

[0056] The pressure controller 21 drives the support arm 20 to move up and down, adjusts the distance between the polishing head 22 and the wafer 11 , and thus adjusts the pressure applied by the polishing head 22 to the wafer 11 .

[0057] In a specific embodiment, the wafer disk 10 is provided with fluid holes.

[0058] In a specific embodiment, a polishing pad 25 is disposed on the surface of the polishing head 22 that contacts the wafer 11 .

[0059] The polishing pad 25 is used to increase friction and polish the surface of the wafer 11 .

[0060] In a specific embodiment, the eddy current sensor 26 is disposed on the polishing head 22 .

[0061] When the polishing head 22 polishes the wafer 11, the eddy current sensor 26 monitors the thickness of the wafer 11 in real time and adjusts the pressure applied to the wafer 11 in time, thereby improving the pressure control accuracy applied to each area of ​​the wafer 11 and improving the problem of incomplete cleaning of the edge of the wafer 11 and damage to the middle part of the wafer 11.

[0062] The specific implementation methods described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific implementation method of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A semiconductor polishing pre-cleaning device, characterized in that: include: Wafer disc (10), adjustment assembly, eddy current sensor (26) and processor (27), The wafer disk (10) is used to place a wafer (11), and the wafer disk (10) rotates around the central axis of the wafer disk (10); The eddy current sensor (26) is in communication connection with the processor (27), and the eddy current sensor (26) is used to monitor the thickness of the wafer (11) and send the monitored thickness of the wafer (11) to the processor (27); The processor (27) is connected to the regulating component, and the processor (27) is used to calculate the pressure value and position applied by the regulating component to the wafer (11) according to the thickness of the wafer (11), generate a control instruction, and send the control instruction to the regulating component; Part of the adjustment component is in contact with the wafer (11), and the adjustment component is used to adjust the pressure value and position applied to the wafer (11) according to the control instruction.

2. A semiconductor polishing pre-cleaning device according to claim 1, characterized in that: The regulating assembly comprises a support arm (20) and a pressure controller (21), wherein the pressure controller (21) is connected to the support arm (20), and an input end of the pressure controller (21) is connected to an output end of a processor (27); The processor (27) is used to receive the thickness of the wafer (11) monitored by the eddy current sensor (26), calculate the pressure value applied by the regulating component to the wafer (11) according to the thickness of the wafer (11), and send the pressure value to the pressure controller (21); The pressure controller (21) is used to adjust the pressure applied to the wafer (11) according to the pressure value.

3. A semiconductor polishing pre-cleaning device according to claim 2, characterized in that: The adjustment assembly also includes a polishing head (22); one end of the support arm (20) extends to the central axis of the wafer disk (10); the polishing head (22) is arranged at the end; the polishing head (22) is in contact with the wafer (11); and the surface of the polishing head (22) in contact with the wafer (11) is used for polishing and pre-cleaning the wafer (11).

4. A semiconductor polishing pre-cleaning device according to claim 3, characterized in that: The adjustment component also includes a first motor (23) and a first driver (28), the first motor (23) is electrically connected to the processor (27) through the first driver (28), the rotating shaft of the first motor (23) is arranged at the end of the support arm (20) extending to the central axis of the wafer disk (10), the polishing head (22) is connected to the support arm (20) through the first motor (23), and the first motor (23) is used to control the rotation of the polishing head (22).

5. A semiconductor polishing pre-cleaning device according to claim 4, characterized in that: The adjustment component also includes a second motor (24) and a second driver (29), the second motor (24) is electrically connected to the processor (27) through the second driver (29), the other end of the support arm (20) extends out of the wafer disk (10), the rotating shaft of the second motor (24) is arranged at the end of the support arm (20) extending out of the wafer disk (10), and the second motor (24) is used to control the rotation of the support arm (20).

6. A semiconductor polishing pre-cleaning device according to claim 3, characterized in that: The end of the support arm (20) extending out of the wafer disk (10) is relatively stationary with respect to the central axis of the wafer disk (10).

7. A semiconductor polishing pre-cleaning device according to claim 5, characterized in that: The pressure controller (21) is arranged at the end of the support arm (20) extending out of the wafer disk (10).

8. A semiconductor polishing pre-cleaning device according to claim 1, characterized in that: The wafer disk (10) is provided with a fluid hole.

9. A semiconductor polishing pre-cleaning device according to claim 3, characterized in that: A polishing pad (25) is provided on the surface of the polishing head (22) in contact with the wafer (11).

10. The semiconductor polishing pre-cleaning equipment according to claim 3, characterized in that: The eddy current sensor (26) is arranged on the polishing head (22).

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