An integrated MEMS chip and its manufacturing method

Abstract

This invention discloses an integrated MEMS chip and its manufacturing method. The manufacturing method includes: providing a first substrate and a second substrate; fabricating an electrical interconnect structure covering one side surface of the second substrate; forming a first vent hole in the electrical interconnect structure or fabricating an auxiliary opening structure covering one side surface of the first substrate, and forming the first vent hole in the auxiliary opening structure. A sensor structure is fabricated on the first substrate, with a movable gap between the sensor structure and the electrical interconnect structure. The movable gap and the movable groove together constitute the deformation space of the corresponding sensor structure. Each first vent hole has a corresponding and connected second vent hole. This application can adjust the air pressure in the corresponding deformation space through the connected second vent hole and the first vent hole, and after the air pressure is adjusted, the first vent hole and the second vent hole are sealed, so that the air pressure in the deformation space is maintained at a preset air pressure.

Description

Technical Field

[0001] This invention relates to the technical field of manufacturing methods for integrated MEMS chips, and particularly to an integrated MEMS chip and its manufacturing method. Background Technology

[0002] Integrated MEMS chips refer to the integration of multiple sensors with different functions onto the same MEMS chip. This trend of integration can not only reduce the physical size of the system and reduce power consumption, but also improve the overall system reliability and performance.

[0003] Some sensor structures integrated on MEMS chips need to operate in a sealed cavity, which is typically achieved through wafer bonding to encapsulate the sensor within the sealed cavity. However, different sensors require different cavity pressures, and wafer bonding can only achieve a given cavity pressure, making it impossible to set the pressure separately for different sensor structures integrated on the same wafer. Summary of the Invention

[0004] Embodiments of the present invention provide an integrated MEMS chip and a method for manufacturing the same, so as to set corresponding air pressures for different sensor structures on the same MEMS chip.

[0005] To address the aforementioned technical problems, embodiments of the present invention disclose the following technical solutions:

[0006] On the one hand, a method for manufacturing an integrated MEMS chip is provided, including:

[0007] A first substrate and a second substrate are provided, wherein a plurality of physically isolated movable grooves are formed on one side surface of the first substrate;

[0008] An electrical interconnect structure is fabricated, the electrical interconnect structure covering one side surface of the second substrate;

[0009] At least one first vent hole is formed on the electrical interconnect structure, the surface of the second substrate is exposed in the first vent hole, and the thickness of the electrical interconnect structure is less than the thickness of the second substrate; or, an auxiliary opening structure is formed at the bottom of at least one movable groove, the thickness of the auxiliary opening structure is less than the minimum thickness of the first substrate, and the first vent hole is formed on the auxiliary opening structure.

[0010] Multiple sensor structures are fabricated, and the multiple sensor structures are located on the side of the first substrate where the multiple movable grooves are formed, and are connected to the first substrate. The multiple sensor structures correspond one-to-one with the multiple movable grooves, and at least one of the multiple sensor structures corresponds to the first vent hole.

[0011] The first substrate and the second substrate are connected. A movable gap is formed between the side surface of each sensor structure facing away from the first substrate and the side surface of the electrical interconnection structure facing away from the second substrate. Adjacent movable gaps are physically isolated. The movable gaps and the movable grooves together constitute the deformation space of the corresponding sensor structure. The projection of the first vent hole is located within the projection of the movable gap of the corresponding sensor structure. The electrical interconnection structure is embedded with a plurality of conductors, each of which corresponds to a sensor structure. The corresponding conductors are electrically connected to the sensor structure.

[0012] At least one second vent is made, and the at least one second vent corresponds one-to-one with the at least one first vent. The corresponding second vent and the first vent are connected. The air pressure of the corresponding deformation space is adjusted through the connected second vent and the first vent.

[0013] Seal the first vent and the second vent.

[0014] In addition to one or more of the features disclosed above, or alternatively, the fabrication of the electrical interconnection structure includes:

[0015] A first insulating structure is fabricated, which covers one side surface of the second substrate;

[0016] A conductive structure is fabricated, the conductive structure covering the side surface of the first insulating structure that faces away from the second substrate;

[0017] Partial conductive structures are removed at intervals to form a plurality of spaced conductive bodies on the first insulating structure;

[0018] A second insulating structure is fabricated, which covers the remaining surface of the first insulating structure facing away from the second substrate and covers the conductor;

[0019] Multiple electrical interconnect holes are provided, which penetrate the second insulation structure, and each of the multiple electrical interconnect holes corresponds to a multiple conductor, with the conductor exposed in the corresponding electrical interconnect hole;

[0020] Wherein, the sum of the thicknesses of the first insulating structure and the second insulating structure is less than the thickness of the second substrate.

[0021] In addition to one or more of the features disclosed above, or alternatively, the manufacturing method further includes, prior to connecting the first substrate and the second substrate:

[0022] A plurality of first conductive ring structures are formed on the side surface of the electrical interconnect structure opposite to the second substrate. Each of the plurality of first conductive ring structures corresponds to one of the plurality of conductors, and the first conductive ring structures are filled in the corresponding electrical interconnect holes to be electrically connected to the corresponding conductors.

[0023] A second conductive ring structure is fabricated on the side surface of each sensor structure facing away from the first substrate, and a plurality of second conductive ring structures correspond one-to-one with a plurality of first conductive ring structures.

[0024] When connecting the first substrate and the second substrate, the first conductive ring structure and the second conductive ring structure are connected accordingly.

[0025] In addition to one or more of the features disclosed above, or alternatively, the manufacturing method further includes, prior to connecting the first substrate and the second substrate:

[0026] At least one protective structure is fabricated, which corresponds one-to-one with the first vent hole. The protective structure is located on one side surface of the sensor structure that is directly opposite the corresponding first vent hole, and the projection of the corresponding protective structure overlaps with the projection of the first vent hole in the thickness direction of the first substrate.

[0027] In addition to one or more of the features disclosed above, or alternatively, each of the sensor structures includes a working area and a non-working area, wherein, in the thickness direction of the first substrate, the projection of each of the first vent holes onto the corresponding sensor structure is located in the non-working area of ​​the sensor structure.

[0028] In addition to one or more of the features disclosed above, or as an alternative, when an auxiliary opening structure is fabricated at the bottom of at least one movable groove, the at least one movable groove includes a main groove and a secondary groove that are connected to each other. The auxiliary opening structure at least covers the bottom of the secondary groove. After the first substrate and the second substrate are bonded, in the thickness direction of the first substrate, the projection of the main groove on the corresponding sensor structure is located in the working area of ​​the sensor structure, and the projection of the secondary groove on the corresponding sensor structure is located in the non-working area of ​​the sensor structure. After a first vent hole is formed on the auxiliary opening structure, the projection of the first vent hole overlaps with the projection of the secondary groove.

[0029] In addition to one or more of the features disclosed above, or as an alternative, a connecting groove is formed on one side surface of the first substrate where the main groove and the secondary groove are formed, the connecting groove being located between the main groove and the secondary groove for connecting the main groove and the secondary groove, and the groove depth of the connecting groove being less than the groove depth of the secondary groove and the groove depth of the main groove.

[0030] Wherein, when the first substrate and the second substrate are bonded, the bottom of the connecting groove and the surface of the sensor structure facing the connecting groove together form a connecting channel between the main groove and the secondary groove.

[0031] In addition to one or more of the features disclosed above, or as an alternative, the aperture of the first vent is 0.2 μm-1 μm.

[0032] In addition to one or more of the features disclosed above, or as an alternative,

[0033] The diameter of the first vent is smaller than the diameter of the second vent at the end closest to the first vent.

[0034] In addition to one or more of the features disclosed above, or as an alternative, making at least one second vent includes:

[0035] When the first vent is formed on the electrical interconnect structure, a second vent is formed on the second substrate that communicates with the first vent.

[0036] When the first vent is formed on the auxiliary opening structure, a second vent is formed on the first substrate that communicates with the first vent.

[0037] In addition to one or more of the features disclosed above, or alternatively, blocking the first vent and the second vent includes:

[0038] A first sealing structure is fabricated, which covers the inner wall of the second vent and seals the first vent.

[0039] A second sealing structure is fabricated and filled into the second vent hole.

[0040] On the other hand, an integrated MEMS chip is provided, including:

[0041] A first substrate, wherein a plurality of physically isolated movable grooves are formed on one side surface of the first substrate;

[0042] Multiple sensor structures are provided, each of which corresponds to a multiple movable groove and is connected to one side surface of the first substrate on which the movable groove is formed. In the thickness direction of the first substrate, the corresponding movable groove and the sensor structure project to overlap.

[0043] A second substrate has an electrical interconnect structure covering one side surface. Multiple conductors are embedded in the electrical interconnect structure, each corresponding to a sensor structure. The corresponding conductors and sensor structures are electrically connected. The side surface of the electrical interconnect structure facing away from the second substrate is connected to the side surface of the sensor structure facing away from the first substrate. The thickness of the electrical interconnect structure is less than the thickness of the second substrate. A movable gap is formed between the side surface of each sensor structure facing away from the first substrate and the side surface of the electrical interconnect structure facing away from the second substrate. Adjacent movable gaps are physically isolated. The movable gaps and the movable grooves together constitute the deformation space of the corresponding sensor structure.

[0044] The electrical interconnection structure has at least one first vent hole with a thickness extending through it. The first vent hole is connected to the deformation space of one of the multiple sensor structures. The second substrate has at least one second vent hole extending through it. The first vent hole and the second vent hole correspond one-to-one, and the corresponding first vent hole and the second vent hole are connected. After the air pressure in the deformation space is adjusted, the first vent hole and the second vent hole are blocked. Alternatively, the bottom of at least one of the multiple movable grooves is covered with an auxiliary opening structure. The thickness of the auxiliary opening structure is less than the minimum thickness of the first substrate. The first vent hole is formed on the auxiliary opening structure. The first vent hole is connected to the deformation space of one of the multiple sensor structures. The first substrate has at least one second vent hole extending through it. The first vent hole and the second vent hole correspond one-to-one, and the corresponding first vent hole and the second vent hole are connected. After the air pressure in the deformation space is adjusted, the first vent hole and the second vent hole are blocked.

[0045] In addition to one or more of the features disclosed above, or as an alternative, the electrical interconnect structure includes: a first insulating structure, a plurality of conductors, and a second insulating structure, wherein the first insulating structure is connected to a side surface of the second substrate opposite to the first substrate, the plurality of conductors are spaced apart on a side surface of the first insulating structure opposite to the second substrate, and the second insulating structure covers the side surface of the first insulating structure on which the conductors are disposed and covers the plurality of conductors.

[0046] The second insulating structure has a plurality of electrical interconnect holes that extend through its own thickness. Each of the plurality of electrical interconnect holes corresponds to a plurality of conductors, and the conductors are exposed in the corresponding electrical interconnect holes. A plurality of first conductive ring structures are connected to the surface of the second insulating structure facing away from the first insulating structure. Each of the plurality of first conductive ring structures corresponds to a plurality of conductors, and the first conductive ring structures fill the corresponding electrical interconnect holes and are electrically connected to the corresponding conductors.

[0047] In addition to one or more of the features disclosed above, or alternatively, the diameter of the first vent is smaller than the diameter of the second vent at the end closest to the first vent.

[0048] In addition to one or more of the features disclosed above, or alternatively, each of the sensor structures includes a working area and a non-working area, wherein, in the thickness direction of the first substrate, the projection of each of the first vent holes onto the corresponding sensor structure is located in the non-working area of ​​the sensor structure.

[0049] In addition to one or more features disclosed above, or as an alternative, at least one of the plurality of active grooves includes a main groove and a secondary groove that are connected, wherein, in the thickness direction of the first substrate, the projection of the main groove onto the corresponding sensor structure is located in the working area of ​​the sensor structure, and the projection of the secondary groove onto the corresponding sensor structure is located in the non-working area of ​​the sensor structure.

[0050] When an auxiliary opening structure is manufactured at the bottom of at least one active groove, the auxiliary opening structure covers at least the bottom of one of the sub-grooves.

[0051] One of the above technical solutions has the following advantages or beneficial effects: Multiple sensor structures are fabricated on one side surface of the first substrate disclosed in this application. When one or more of the multiple sensor structures need to adjust the air pressure in their deformation space, each sensor structure requiring air pressure adjustment has a first vent hole and a second vent hole connected to it on its corresponding second substrate or movable groove. Specifically, before bonding the first substrate and the second substrate, this application first opens a first vent hole through the auxiliary opening structure on the electrical interconnect structure or auxiliary opening structure. After bonding the first substrate and the second substrate, a second vent hole connected to the first vent hole is opened. This allows the deformation space where the sensor structure requiring air pressure adjustment is located to be connected to the outside through the first and second vent holes, thereby adjusting the air pressure in the deformation space. After the air pressure adjustment is completed, the first and second vent holes are then sealed.

[0052] Furthermore, this application pre-fabricates an electrical interconnect structure with a thickness less than that of the second substrate or an auxiliary aperture structure with a thickness less than the minimum thickness of the first substrate. Compared to directly opening apertures on the first or second substrate, this application creates a first vent hole on the auxiliary aperture structure before bonding. This allows for the creation of a smaller-diameter first vent hole that directly communicates with the deformation space. The smaller diameter facilitates sealing the first vent hole after voltage regulation, improving the airtightness of the deformation space. Simultaneously, the electrical interconnect structure integrates the electrical components of multiple sensor structures onto the same substrate, saving space and simplifying the packaging process. Furthermore, the direct transmission of electrical signals through the conductors in this electrical interconnect structure reduces resistance and electrical noise caused by long-distance signal transmission, improving signal transmission efficiency and accuracy. Attached Figure Description

[0053] The technical solution and other beneficial effects of the present invention will become apparent from the following detailed description of specific embodiments of the invention, in conjunction with the accompanying drawings.

[0054] Figure 1 This is a step diagram of a method for manufacturing an integrated MEMS chip according to an embodiment of this application;

[0055] Figure 2-7 This is a process diagram of a method for manufacturing an integrated MEMS chip according to an embodiment of this application;

[0056] Figure 8-11 This is a process diagram of another method for manufacturing an integrated MEMS chip provided in an embodiment of this application;

[0057] Figure 12 This is a schematic diagram of an auxiliary opening structure provided in an embodiment of this application;

[0058] Figure 13 This is a schematic diagram of a protective structure provided according to an embodiment of this application.

[0059] Explanation of reference numerals in the attached figures:

[0060] 100. First substrate; 101. Movable groove; 1011. Main groove; 1012. Secondary groove;

[0061] 110. Sensor structure; 111. Working area; 112. Non-working area; 113. Protective structure;

[0062] 120. Second conductive ring structure; 130. Movable interval;

[0063] 200, Second substrate;

[0064] 300. Electrical interconnection structure; 301. First insulation structure; 302. Conductor; 303. Second insulation structure; 3031. Electrical interconnection hole; 3032. First conductive ring structure; 304. First vent hole;

[0065] 400. First sealing structure; 401. Second sealing structure;

[0066] 500, Second vent;

[0067] 600. Auxiliary opening structure. Detailed Implementation

[0068] To make the objectives, technical solutions, and beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described in this specification are merely for explaining the invention and are not intended to limit the invention.

[0069] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0070] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, a direct connection, or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0071] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0072] This invention discloses an integrated MEMS chip and its manufacturing method, with reference to... Figure 1 The manufacturing method of this integrated MEMS chip includes:

[0073] S100. A first substrate and a second substrate are provided, wherein a plurality of movable grooves physically isolated from each other are formed on one side surface of the first substrate;

[0074] S200. Fabricate an electrical interconnect structure that covers one side surface of the second substrate;

[0075] S300. At least one first vent hole is formed in the electrical interconnect structure, the surface of the second substrate is exposed in the first vent hole, and the thickness of the electrical interconnect structure is less than the thickness of the second substrate; or, an auxiliary opening structure is formed at the bottom of at least one movable groove, the thickness of the auxiliary opening structure is less than the minimum thickness of the first substrate, and the first vent hole is formed in the auxiliary opening structure.

[0076] S400. Fabricate multiple sensor structures, which are located on the side of the first substrate where multiple movable grooves are formed and connected to the first substrate. The multiple sensor structures correspond one-to-one with the multiple movable grooves, and at least one of the multiple sensor structures corresponds to the first vent hole.

[0077] S500. Connect the first substrate and the second substrate. A movable interval is formed between the side surface of each sensor structure facing away from the first substrate and the side surface of the electrical interconnection structure facing away from the second substrate. Adjacent movable intervals are physically isolated. The movable intervals and movable grooves together constitute the deformation space of the corresponding sensor structure. The projection of the first vent hole is located within the projection of the movable interval of the corresponding sensor structure. Multiple conductors are embedded in the electrical interconnection structure. Each conductor corresponds to a sensor structure. The corresponding conductors are electrically connected to the sensor structure.

[0078] S600. Make at least one second vent hole, the at least one second vent hole corresponds one-to-one with at least one first vent hole, and the corresponding second vent hole and the first vent hole are connected, and adjust the air pressure of the corresponding deformation space through the connected second vent hole and the first vent hole.

[0079] S700. Block the first and second vent holes.

[0080] The first substrate 100 provided in step S100 is as follows Figure 2 As shown. Specifically, the number of multiple physically isolated movable grooves 101 is set based on the number of sensor structures 110 integrated in the MEMS chip. Each sensor structure 110 is provided with one movable groove 101. The figures disclosed in this application all use two sensor structures 110 integrated in the MEMS chip as an example.

[0081] Reference Figure 3In step S200, an electrical interconnect structure 300 is fabricated, which covers one side surface of the second substrate 200. Specifically, the electrical interconnection structure 300 is embedded with conductors 302 that correspond one-to-one with the sensor structure 110. The fabrication process of the electrical interconnection structure 300 includes: firstly, fabricating a first insulating structure 301, which covers one side surface of the second substrate 200; then, fabricating a conductive structure, which covers the side surface of the first insulating structure 301 facing away from the second substrate 200; then, partially removing the conductive structure at intervals to form a plurality of spaced conductors 302 on the first insulating structure 301; next, fabricating a second insulating structure 303, which covers the remaining surface of the first insulating structure 301 facing away from the second substrate 200 and covers the conductors 302; finally, forming a plurality of electrical interconnect holes 3031, each of which penetrates the second insulating structure 303, and the plurality of electrical interconnect holes 3031 correspond one-to-one with the plurality of conductors 302, with the conductors 302 exposed in the corresponding electrical interconnect holes 3031. It should be noted that the sum of the thicknesses of the first insulating structure 301 and the second insulating structure 303 is less than the thickness of the second substrate 200. The material of the first insulating structure 301 can be SiO2, SiN, or a combination thereof. The material of the conductive structure can be Ti, Cr, TiW, Al, Cu, Au, Ge, or a combination thereof. The material of the second insulating structure 303 can be SiO2, SiN, or a combination thereof. The second insulating structure 303 covers the conductor 302, which can prevent the conductor 302 from contacting the sensor structure 110 after the first substrate 100 and the second substrate 200 are connected. It should also be noted that the number of conductors 302 is equal to the number of sensor structures 110, and each sensor structure 110 is provided with one conductor 302. The sensor structure 110 can transmit electrical signals to the outside world through the corresponding conductor 302. Specifically, the sidewalls of the conductor 302 can be exposed after the wafer is cut to make electrical connections with the peripheral circuit, or the second substrate 200 can be etched to expose the conductor 302 to make electrical connections with the peripheral circuit. This design allows the electrical components of multiple sensor structures 110 to be integrated on the same substrate, saving space and simplifying the packaging process. Simultaneously, the direct transmission of electrical signals through the conductors 302 in this electrical interconnection structure 300 reduces resistance and electrical noise caused by long-distance transmission, improving signal transmission efficiency and accuracy.

[0082] In step S300, a first vent 304 is created. In different embodiments, the first vent 304 is opened in different ways. The implementation of the first vent 304 will be described in detail below with reference to different embodiments:

[0083] Reference Figure 4One embodiment of the first vent hole 304 is as follows: at least one first vent hole 304 is formed on the electrical interconnect structure 300. The number of first vent holes 304 depends on the number of sensor structures 110 whose deformation space pressure needs to be adjusted. Each first vent hole 304 corresponds one-to-one with a sensor structure 110 whose deformation space pressure needs to be adjusted, and is connected to the deformation space of the corresponding sensor structure 110 (in other words, in the thickness direction of the second substrate 200, the projection of the corresponding first vent hole 304 overlaps with the projection of the sensor structure 110, and the first vent hole 304 is directly connected to the movable interval 130 of the corresponding sensor structure 110). It should be noted that in the thickness direction of the second substrate 200, the projection of the first vent hole 304 does not overlap with the projection of the electrical interconnect hole 3031, and the projection of the first vent hole 304 does not overlap with the projection of the conductor 302. In other words, the position of the first vent hole 304 avoids the position of the conductor 302 and the position of the electrical interconnect hole 3031. (Refer to...) Figure 8 and Figure 12 In a second embodiment, the first vent 304 is formed by: fabricating an auxiliary opening structure 600 on one side surface of the first substrate 100 where the movable groove 101 is formed. The first vent 304 is formed on the auxiliary opening structure 600. The auxiliary opening structure 600 can be fabricated by: oxidizing the side surface of the first substrate 100 where the movable groove 101 is formed, so that a silicon dioxide layer of a predetermined thickness is formed on the side surface of the first substrate 100. This predetermined thickness of silicon dioxide is the auxiliary opening structure 600, and the thickness of the silicon dioxide is less than the thickness of the first substrate 100. The auxiliary opening structure 600 has two structural forms; specifically, refer to... Figure 8 The completed auxiliary aperture structure 600 covers the first substrate 100 and the groove walls and bottom of each movable groove 101. (Refer to...) Figure 12 The completed auxiliary opening structure 600 covers the bottom of at least one movable groove 101. When the auxiliary opening structure 600 covers the bottom of at least one movable groove 101, the bottom of the movable groove 101 covered by the auxiliary opening structure 600 is the bottom of the movable groove 101 corresponding to the sensor structure 110 that needs to adjust the air pressure of the deformation space.

[0084] Furthermore, in some embodiments, when the opening method of the first vent 304 in the integrated MEMS chip is as described in Embodiment 2 above, the movable groove 101 corresponding to the sensor structure 110 that requires adjustment of the air pressure in the deformation space includes a main groove 1011 and a secondary groove 1012 that are connected. Each sensor structure 110 includes a working area 111 and a non-working area 112. After the first substrate 100 and the second substrate 200 are bonded, in the thickness direction of the first substrate 100, the projection of the main groove 1011 onto the corresponding sensor structure 110 is located in the working area 111 of the sensor structure 110, and the projection of the secondary groove 1012 onto the corresponding sensor structure 110 is located in the non-working area 112 of the sensor structure 110. Furthermore, in the thickness direction of the first substrate 100, the projection of the first vent 304 overlaps with the projection of the secondary groove 1012. Specifically, in... Figure 8 In the auxiliary opening structure 600 shown, the first vent 304 is formed on the auxiliary opening structure 600 covering the bottom of the secondary groove 1012, as shown in the figure. Figure 12 In the auxiliary opening structure 600 shown, the auxiliary opening structure 600 covers the bottom of the secondary groove 1012, and the first vent hole 304 is opened on it.

[0085] Compared to directly creating a first vent hole 304 communicating with the outside on the first substrate 100 or the second substrate 200, the embodiments 1 and 2 of this application, which involve creating the first vent hole 304, firstly create the first vent hole 304 on the electrical interconnect structure 300 or the auxiliary aperture structure 600 before bonding. This allows for the creation of a first vent hole 304 with a smaller aperture. The first vent hole 304 is directly connected to the deformation space, and its smaller aperture facilitates sealing the first vent hole 304 after voltage regulation, improving the airtightness of the deformation space. In the embodiments disclosed in this application, the aperture of the first vent hole 304 is between 0.2µm and 1µm.

[0086] Reference Figure 5 In step S400, multiple sensor structures 110 are fabricated on one side of the first substrate 100 where multiple movable grooves 101 are formed. Each sensor structure 110 corresponds one-to-one with one of the movable grooves 101 and covers the opening of the movable groove 101. Specifically, fabricating the sensor structure 110 typically involves bonding a silicon wafer to one side of the first substrate 100 where multiple movable grooves 101 are formed, then thinning and planarizing the silicon wafer, and finally patterning and etching the silicon wafer to form a sensor structure 110 above each movable groove 101. When one side surface of the first substrate 100 is fabricated with... Figure 8 When the auxiliary aperture structure 600 is shown, the silicon wafer is bonded to the surface of the auxiliary aperture structure 600 facing away from the first substrate 100, thereby achieving connection with the first substrate 100 (see reference). Figure 9When one side surface of the first substrate 100 is manufactured with such... Figure 12 When the auxiliary opening structure 600 is mentioned, or, as in Figure 5 When the first substrate 100 does not have an auxiliary opening structure 600, the silicon wafer is directly bonded to the side surface of the first substrate 100 where the movable groove 101 is formed.

[0087] Reference Figure 6 In step S500, the first substrate 100 and the second substrate 200 are connected, and after the first substrate 100 and the second substrate 200 are connected, each sensor structure 110 establishes an electrical connection with the corresponding conductor 302. Specifically, the electrical connection between the corresponding conductor 302 and the sensor structure 110 can be established by the following method. (Refer to...) Figure 4 and Figure 5Before connecting the first substrate 100 and the second substrate 200, a plurality of first conductive ring structures 3032 are fabricated on the surface of the second insulating structure 303 facing away from the second substrate 200. Each of the first conductive ring structures 3032 corresponds one-to-one with a plurality of conductors 302, and the first conductive ring structures 3032 fill the corresponding electrical interconnect holes 3031 to electrically connect with the corresponding conductors 302. Then, a second conductive ring structure 120 is fabricated on the surface of each sensor structure 110 facing away from the first substrate 100, with each of the second conductive ring structures 120 corresponding one-to-one with a plurality of first conductive ring structures 3032. When connecting the first substrate 100 and the second substrate 200, the corresponding first conductive ring structures 3032 and second conductive ring structures 120 are connected. It should be noted that, to avoid signal interference, there is a gap between adjacent first conductive ring structures 3032, and there is also a gap between adjacent second conductive ring structures 120. The electrical signal output by the sensor structure 110 can be transmitted to the corresponding conductor 302 through the corresponding second conductive ring structure 120 and the first conductive ring structure 3032. By setting the first conductive ring structure 3032 and the second conductive ring structure 120, after connecting the first substrate 100 and the second substrate 200 in step S400, a movable interval 130 can be formed between each sensor structure 110 and the second insulating structure 303, and adjacent movable intervals 130 can be physically isolated to ensure the airtightness between the deformation spaces. It should be noted that after the first substrate 100 and the second substrate 200 are connected, the projection of the first vent 304 is located within the projection of the movable interval 130 of the corresponding sensor structure 110, and the movable groove 101 and the movable interval 130 corresponding to each sensor structure 110 are connected through the sensor structure 110. The materials of the first conductive ring structure 3032 and the second conductive ring structure 120 can be the same material, and can be the same as the material of the conductive structure. In step S600, at least one second vent 500 is fabricated. The second vent 500 corresponds to the first vent 304 and the sensor structure 110 for which the air pressure in the deformation space needs to be adjusted. When the first vent 304 is formed on the electrical interconnect structure 300, the corresponding second vent 500 is formed on the second substrate 200 (see reference). Figure 6 When the first vent 304 is formed on the auxiliary opening structure 600, the corresponding second vent 500 is formed on the first substrate 100 (see reference). Figure 10 ).

[0088] In step S700, after adjusting the air pressure in the corresponding deformation space through the connected second vent 500 and first vent 304, the first vent 304 and second vent 500 are sealed. (Refer to...) Figure 7 or Figure 11In some embodiments, the second vent 500 and the first vent 304 are sealed by the following steps: First, a first sealing structure 400 is fabricated, which covers the inner wall of the second vent 500 and seals the first vent 304. Specifically, the first sealing structure 400 can be fabricated by vapor deposition or PVD processes. Both vapor deposition and PVD are thin film deposition technologies. In the embodiments disclosed in this application, the pore size of the first vent 304 is between 0.2µm and 1µm. Through the aforementioned thin film deposition technology, a dense and uniform first sealing structure 400 can be formed both inside and outside the first vent 304, ensuring that the sealed first vent 304 has good airtightness. Compared with sealing the first vent 304 by laser sealing, the heat-affected zone of sealing the first vent 304 by thin film deposition technology in this application is smaller, avoiding thermal damage to the MEMS chip during the sealing process. Then, a second sealing structure 401 is fabricated, which fills the second vent 500. The second sealing structure 401 can be formed by electroplating. Electroplating improves the adhesion of the second sealing structure 401 and ensures that the metal is uniformly filled in the second vent 500. Sealing the second vent 500 further improves the airtightness of the deformation space. It should be noted that the first sealing structure 400 can partially or completely seal the first vent 304, and the second sealing structure 401 can partially or completely seal the second vent 500. The material of the first sealing structure 400 can be Ti, Cu, Cr, TiW, or related alloy materials. The material of the second sealing structure 401 can be Cu, Ni, Ag, Al, or a combination thereof. When fabricating the first sealing structure 400 and the second sealing structure 401, the first sealing structure 400 may cover the surface of the second substrate 200 on the side away from the auxiliary opening structure 600. Therefore, after fabricating the first sealing structure 400 and the second sealing structure 401, the first sealing structure 400 and the second sealing structure 401 covering the surface of the second substrate 200 can be removed by chemical etching or CMP process.

[0089] Furthermore, to prevent metal molecules from diffusing from the secondary groove 1012 to the main groove 1011 and depositing on the working area 111 of the sensor structure 110 when the first vent 304 is blocked by thin-film deposition technology, this application provides a communication method between the secondary groove 1012 and the main groove 1011. Specifically, the main groove 1011 and the secondary groove 1012 can be connected by a connecting groove. The connecting groove is formed on one side surface of the first substrate 100 where the main groove 1011 and the secondary groove 1012 are formed, and is located between the main groove 1011 and the secondary groove 1012 to be connected. The depth of the connecting groove is less than the depth of the secondary groove 1012 and the depth of the main groove 1011. In some embodiments, the depth of the secondary groove 1012 is also less than the depth of the main groove 1011. It should be noted that the depth of the connecting groove is the distance between the bottom of the connecting groove and one side surface of the first substrate 100 where the main groove 1011 and the secondary groove 1012 are formed. Similarly, the depth of the secondary groove 1012 and the depth of the main groove 1011 can be obtained. With this design, after the first substrate 100 and the second substrate 200 are bonded, the bottom of the connecting groove and the surface of the sensor structure 110 facing the connecting groove together form a connecting channel between the main groove 1011 and the secondary groove 1012. When adjusting the air pressure in the deformation space, it can be adjusted through the second vent 500 - first vent 304 - secondary groove 1012 - connecting groove - main groove 1011.

[0090] To further improve the airtightness of the deformation space, in some embodiments, the diameter of the first vent 304 is smaller than the diameter of the second vent 500 at the end near the first vent 304. Thus, the first sealing structure 400 can cover the inner wall of the second vent 500, assisting the opening structure 600 on the side of the sensor structure 110 (or the electrical interconnection structure 300 on the side of the sensor structure 110) and sealing the first vent 304. Compared to the case where the diameter of the first vent 304 is equal to the diameter of the second vent 500 at the end near the first vent 304, this arrangement provides a larger contact area and structural support, enhancing the mechanical strength of the first sealing structure 400 and reducing the risk of detachment or cracking of the sealing material due to external forces or temperature changes during use. Especially for sealing thin film materials, a larger contact area can reduce stress concentration and extend the service life of the sealing structure.

[0091] To prevent etching solution from falling onto sensor structure 110 through first vent 304 and causing damage during the etching of second vent 500, please refer to... Figure 13In some embodiments, before the first substrate 100 and the second substrate 200 are bonded, the method for manufacturing the integrated MEMS chip further includes fabricating a protective structure 113 (i.e., the protective structure 113 corresponds one-to-one with the first vent 304) on the side surface of the sensor structure 110 facing the first vent 304, and the projection of the protective structure 113 overlaps with the projection of the corresponding first vent 304. Specifically, when the first vent 304 is formed on the auxiliary opening structure 600, the protective structure 113 is located on the side surface of the sensor structure 110 corresponding to the first vent 304 facing the first substrate 100; when the first vent 304 is formed on the electrical interconnect structure 300, the protective structure 113 is located on the side surface of the sensor structure 110 corresponding to the first vent 304 facing the second substrate 200. The fabrication steps of the protective structure 113 are as follows: a protective material is deposited on the surface of the sensor structure 110 facing the first vent 304. The protective material can typically be an insulating material such as SiO2 or SiN. Then, the deposited protective material is etched to form the protective structure 113 as a protrusion on the surface of the first substrate 100 facing the first vent 304. After the first substrate 100 and the second substrate 200 are bonded, the projections of the corresponding first vent 304 and the protective structure 113 overlap on the corresponding sensor structure 110 in the thickness direction of the first substrate 100. It should be noted that the projection of each first vent 304 onto the corresponding sensor structure 110 is located in the non-working area 112 of the sensor structure 110; therefore, the protective structure 113 corresponding to each first vent 304 is also located in the non-working area 112 of the sensor structure 110. It should also be noted that the thickness of the protective structure 113 is less than the thickness of the first conductive ring structure 3032 and also less than the thickness of the second conductive ring structure 120, and there is a gap between the protective structure 113 and the opposite auxiliary opening structure 600.

[0092] This invention discloses an integrated MEMS chip, referring to... Figure 7 or Figure 13The integrated MEMS chip includes a first substrate 100, a second substrate 200, and multiple sensor structures 110. Multiple physically isolated movable grooves 101 are formed on one side surface of the first substrate 100. Each sensor structure 110 corresponds one-to-one with a movable groove 101 and is connected to the side surface of the first substrate 100 with the movable grooves 101. In the thickness direction of the first substrate 100, the corresponding movable grooves 101 and sensor structures 110 project and overlap. One side surface of the second substrate 200 is covered with an electrical interconnect structure 300. The side surface of the electrical interconnect structure 300 opposite to the second substrate 200 is connected to the side surface of the sensor structure 110 opposite to the first substrate 100. The thickness of the electrical interconnect structure 300 is less than the thickness of the second substrate 200. An active gap 130 is formed between the side surface of each sensor structure 110 opposite to the first substrate 100 and the side surface of the electrical interconnect structure 300 opposite to the second substrate 200. Adjacent active gaps 130 are physically isolated. The active gaps 130 and the active grooves 101 together constitute the deformation space of the corresponding sensor structure 110.

[0093] Furthermore, a first vent 304 is provided on the integrated MEMS chip. The first vent 304 can be provided in two ways. The first way is to provide at least one first vent 304 with its own thickness on the electrical interconnect structure 300. The first vent 304 corresponds to the sensor structure 110 among the multiple sensor structures 110 that requires adjustment of deformation space. The first vent 304 is connected to the deformation space of the corresponding sensor structure 110. The second substrate 200 has a second vent 500 corresponding to the first vent 304 and extending through itself. The corresponding first vent 304 is connected to the second vent 500. After the air pressure in the deformation space is adjusted, the first vent 304 and the second vent 500 are blocked. The second form is as follows: The bottom of the corresponding movable groove 101 of the sensor structure 110 that requires adjustment of deformation space is covered by an auxiliary opening structure 600 (the auxiliary opening structure 600 can cover only the bottom of the corresponding movable groove 101, or it can cover each movable groove 101). The thickness of the auxiliary opening structure 600 is less than the minimum thickness of the first substrate 100. A first vent 304 is opened on the auxiliary opening structure 600. The first vent 304 corresponds to the sensor structure 110 that requires adjustment of deformation space among the multiple sensor structures 110. The first vent 304 is connected to the deformation space of the corresponding sensor structure 110. The first substrate 100 has a second vent 500 that corresponds to the first vent 304 and penetrates it. The corresponding first vent 304 is connected to the second vent 500. After the air pressure of the deformation space is adjusted, the first vent 304 and the second vent 500 are blocked.

[0094] Specifically, the electrical interconnection structure 300 includes a first insulating structure 301, a plurality of conductors 302, and a second insulating structure 303. The first insulating structure 301 is connected to the side surface of the second substrate 200 opposite to the first substrate 100. The plurality of conductors 302 are spaced apart on the side surface of the first insulating structure 301 away from the second substrate 200. The second insulating structure 303 covers the side surface of the first insulating structure 301 on which the conductors 302 are disposed and covers the plurality of conductors 302. The second insulating structure 303 has multiple electrical interconnecting holes 3031 extending through its own thickness. Each electrical interconnecting hole 3031 corresponds to a multiple conductor 302, with the conductor 302 exposed within the corresponding electrical interconnecting hole 3031. Multiple first conductive ring structures 3032 are connected to the surface of the second insulating structure 303 facing away from the first insulating structure 301. Each first conductive ring structure 3032 corresponds to a multiple conductor 302, and the first conductive ring structure 3032 fills the corresponding electrical interconnecting hole 3031, electrically connecting to the corresponding conductor 302. It should be noted that the aperture range of the first vent 304 disclosed above is 0.2μm-1μm. Furthermore, in some embodiments, the aperture of the first vent 304 is smaller than the aperture of the second vent 500 at the end near the first vent 304.

[0095] In some embodiments, each sensor structure 110 includes a working area 111 and a non-working area 112. In the thickness direction of the first substrate 100, the projection of each first vent 304 on the corresponding sensor structure 110 is located in the non-working area 112 of the sensor structure 110.

[0096] In some embodiments, at least one of the plurality of active grooves 101 includes a main groove 1011 and a secondary groove 1012 that are connected to each other. In the thickness direction of the first substrate 100, the projection of the main groove 1011 on the corresponding sensor structure 110 is located in the working area 111 of the sensor structure 110, and the projection of the secondary groove 1012 on the corresponding sensor structure 110 is located in the non-working area 112 of the sensor structure 110.

[0097] When an auxiliary opening structure 600 is manufactured at the bottom of at least one active groove 101, the auxiliary opening structure 600 covers at least the bottom of one of the secondary grooves 1012.

[0098] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0099] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for manufacturing an integrated MEMS chip, characterized in that, include: A first substrate and a second substrate are provided, wherein a plurality of physically isolated movable grooves are formed on one side surface of the first substrate; An electrical interconnect structure is fabricated, the electrical interconnect structure covering one side surface of the second substrate; At least one first vent hole is formed on the electrical interconnect structure, the surface of the second substrate is exposed in the first vent hole, and the thickness of the electrical interconnect structure is less than the thickness of the second substrate; or, an auxiliary opening structure is formed at the bottom of at least one movable groove, the thickness of the auxiliary opening structure is less than the minimum thickness of the first substrate, and the first vent hole is formed on the auxiliary opening structure. Multiple sensor structures are fabricated, and the multiple sensor structures are located on the side of the first substrate where the multiple movable grooves are formed, and are connected to the first substrate. The multiple sensor structures correspond one-to-one with the multiple movable grooves, and at least one of the multiple sensor structures corresponds to the first vent hole. The first substrate and the second substrate are connected. A movable gap is formed between the side surface of each sensor structure facing away from the first substrate and the side surface of the electrical interconnection structure facing away from the second substrate. Adjacent movable gaps are physically isolated. The movable gaps and the movable grooves together constitute the deformation space of the corresponding sensor structure. The projection of the first vent hole is located within the projection of the movable gap of the corresponding sensor structure. The electrical interconnection structure is embedded with a plurality of conductors, each of which corresponds to a sensor structure. The corresponding conductors are electrically connected to the sensor structure. At least one second vent is made, and the at least one second vent corresponds one-to-one with the at least one first vent. The corresponding second vent and the first vent are connected. The air pressure of the corresponding deformation space is adjusted through the connected second vent and the first vent. Seal the first vent and the second vent.

2. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that, The fabrication of the electrical interconnection structure includes: A first insulating structure is fabricated, which covers one side surface of the second substrate; A conductive structure is fabricated, the conductive structure covering the side surface of the first insulating structure that faces away from the second substrate; Partial conductive structures are removed at intervals to form a plurality of spaced conductive bodies on the first insulating structure; A second insulating structure is fabricated, which covers the remaining surface of the first insulating structure facing away from the second substrate and covers the conductor; Multiple electrical interconnect holes are provided, which penetrate the second insulation structure, and each of the multiple electrical interconnect holes corresponds to a multiple conductor, with the conductor exposed in the corresponding electrical interconnect hole; Wherein, the sum of the thicknesses of the first insulating structure and the second insulating structure is less than the thickness of the second substrate.

3. The method for manufacturing an integrated MEMS chip according to claim 2, characterized in that, Before connecting the first substrate and the second substrate, the manufacturing method further includes: A plurality of first conductive ring structures are formed on the side surface of the electrical interconnect structure opposite to the second substrate. Each of the plurality of first conductive ring structures corresponds to one of the plurality of conductors, and the first conductive ring structures are filled in the corresponding electrical interconnect holes to be electrically connected to the corresponding conductors. A second conductive ring structure is fabricated on the side surface of each sensor structure facing away from the first substrate, and a plurality of second conductive ring structures correspond one-to-one with a plurality of first conductive ring structures. When connecting the first substrate and the second substrate, the first conductive ring structure and the second conductive ring structure are connected accordingly.

4. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that, Before connecting the first substrate and the second substrate, the manufacturing method further includes: At least one protective structure is fabricated, which corresponds one-to-one with the first vent hole. The protective structure is located on one side surface of the sensor structure that is directly opposite the corresponding first vent hole, and the projection of the corresponding protective structure overlaps with the projection of the first vent hole in the thickness direction of the first substrate.

5. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that, Each of the sensor structures includes a working area and a non-working area. In the thickness direction of the first substrate, the projection of each of the first vent holes onto the corresponding sensor structure is located in the non-working area of ​​the sensor structure.

6. The method for manufacturing an integrated MEMS chip according to claim 5, characterized in that, When an auxiliary opening structure is fabricated at the bottom of at least one movable groove, the at least one movable groove includes a main groove and a secondary groove that are connected. The auxiliary opening structure at least covers the bottom of the secondary groove. After the first substrate and the second substrate are bonded, in the thickness direction of the first substrate, the projection of the main groove on the corresponding sensor structure is located in the working area of ​​the sensor structure, and the projection of the secondary groove on the corresponding sensor structure is located in the non-working area of ​​the sensor structure. After a first vent hole is opened on the auxiliary opening structure, the projection of the first vent hole overlaps with the projection of the secondary groove.

7. The method for manufacturing an integrated MEMS chip according to claim 6, characterized in that, A connecting groove is formed on one side surface of the first substrate where the main groove and the secondary groove are formed. The connecting groove is located between the main groove and the secondary groove and is used to connect the main groove and the secondary groove. The groove depth of the connecting groove is less than the groove depth of the secondary groove and the groove depth of the main groove. Wherein, when the first substrate and the second substrate are bonded, the bottom of the connecting groove and the surface of the sensor structure facing the connecting groove together form a connecting channel between the main groove and the secondary groove.

8. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that, The diameter of the first vent is 0.2μm-1μm.

9. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that, The diameter of the first vent is smaller than the diameter of the second vent at the end closest to the first vent.

10. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that, Making at least one second vent includes: When the first vent is formed on the electrical interconnect structure, a second vent is formed on the second substrate that communicates with the first vent. When the first vent is formed on the auxiliary opening structure, a second vent is formed on the first substrate that communicates with the first vent.

11. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that, The blocking of the first vent and the second vent includes: A first sealing structure is fabricated, which covers the inner wall of the second vent and seals the first vent. A second sealing structure is fabricated and filled into the second vent hole.

12. An integrated MEMS chip, characterized in that, include: A first substrate (100) has a plurality of physically isolated movable grooves (101) formed on one side surface of the first substrate (100); Multiple sensor structures (110) are provided, each of which corresponds to a multiple movable groove (101) and is connected to the side surface of the first substrate (100) where the movable groove (101) is provided. In the thickness direction of the first substrate (100), the corresponding movable groove (101) and the sensor structure (110) are projected to overlap. A second substrate (200) has an electrical interconnect structure (300) covering one side surface. A plurality of conductors (302) are embedded in the electrical interconnect structure (300), each conductor (302) corresponding to a sensor structure (110). The corresponding conductors (302) and sensor structures (110) are electrically connected. The side surface of the electrical interconnect structure (300) facing away from the second substrate (200) is connected to the side surface of the sensor structure (110) facing away from the first substrate (100). The electrical interconnect structure (300) is thinner than the second substrate (200). A movable gap (130) is formed between the side surface of each sensor structure (110) facing away from the first substrate (100) and the side surface of the electrical interconnect structure (300) facing away from the second substrate (200). Adjacent movable gaps (130) are physically isolated from each other. The movable gaps (130) and the movable grooves (101) together constitute the deformation space of the corresponding sensor structure (110). The electrical interconnection structure (300) has at least one first vent (304) with a thickness extending through itself. The first vent (304) is connected to the deformation space of one of the multiple sensor structures (110). The second substrate (200) has at least one second vent (500) extending through itself. The first vent (304) and the second vent (500) correspond one-to-one. The corresponding first vent (304) and the second vent (500) are connected. After the air pressure in the deformation space is adjusted, the first vent (304) and the second vent (500) are blocked. Alternatively, at least one of the multiple movable grooves (101) has an auxiliary opening structure (600) covering its bottom. The thickness of the auxiliary opening structure (600) is less than the minimum thickness of the first substrate (100). The auxiliary opening structure (600) has a first vent hole (304) which is connected to the deformation space of one of the multiple sensor structures (110). The first substrate (100) has at least one second vent hole (500) that penetrates it. The first vent hole (304) and the second vent hole (500) correspond one-to-one. The corresponding first vent hole (304) and the second vent hole (500) are connected. After the air pressure in the deformation space is adjusted, the first vent hole (304) and the second vent hole (500) are blocked.

13. The integrated MEMS chip according to claim 12, characterized in that, The electrical interconnection structure (300) further includes: a first insulating structure (301) and a second insulating structure (303), wherein the first insulating structure (301) is connected to one side surface of the second substrate (200) opposite to the first substrate (100), the plurality of conductors (302) are spaced apart on one side surface of the first insulating structure (301) away from the second substrate (200), and the second insulating structure (303) covers the side surface of the first insulating structure (301) on which the conductors (302) are disposed and covers the plurality of conductors (302); The second insulating structure (303) has a plurality of electrical interconnect holes (3031) extending through its own thickness. The plurality of electrical interconnect holes (3031) correspond one-to-one with the plurality of conductors (302). The conductors (302) are exposed in the corresponding electrical interconnect holes (3031). A plurality of first conductive ring structures (3032) are connected to the side surface of the second insulating structure (303) away from the first insulating structure (301). The plurality of first conductive ring structures (3032) correspond one-to-one with the plurality of conductors (302), and the first conductive ring structures (3032) fill the corresponding electrical interconnect holes (3031) and are electrically connected to the corresponding conductors (302).

14. The integrated MEMS chip according to claim 12, characterized in that, The diameter of the first vent (304) is smaller than the diameter of the second vent (500) at the end closest to the first vent (304).

15. The integrated MEMS chip according to claim 12, characterized in that, Each of the sensor structures (110) includes a working area (111) and a non-working area (112). In the thickness direction of the first substrate (100), the projection of each of the first vent holes (304) onto the corresponding sensor structure (110) is located in the non-working area (112) of the sensor structure (110).

16. The integrated MEMS chip according to claim 15, characterized in that, At least one of the plurality of movable grooves (101) includes a main groove (1011) and a secondary groove (1012) that are connected. In the thickness direction of the first substrate (100), the projection of the main groove (1011) onto the corresponding sensor structure (110) is located in the working area (111) of the sensor structure (110), and the projection of the secondary groove (1012) onto the corresponding sensor structure (110) is located in the non-working area (112) of the sensor structure (110). When an auxiliary opening structure (600) is manufactured at the bottom of at least one active groove (101), the auxiliary opening structure (600) covers at least the bottom of one of the sub-grooves (1012).

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