High proportion single-layer graphene oxide and a method for preparing the same
CN119430169BActive Publication Date: 2026-08-28ZHENGZHOU UNIV +1
Patent Information
- Application Number
- CN202411635432.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-15
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2044-11-15
AI Technical Summary
Technical Problem
离心分离将层数较多的石墨烯除去，剩下的产物单层率明显提高，但这种做法增加了操作环节且产生了一定的废弃物，氧化石墨烯的产量会减小
Benefits of technology
（1）本发明的制备过程中，对氧化石墨烯前驱体进行洗涤超声、球磨，控制球磨时间为6~18 h，球磨转速为240~360 r/min，在该条件下得到大量单层氧化石墨烯，避免了废弃物的产生从而提高产率。
✦ Generated by Eureka AI based on patent content.
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Figure CN119430169B_ABST
Abstract
The application discloses high-proportion single-layer graphene and a preparation method thereof, and belongs to the technical field of novel two-dimensional nanometer material preparation. Firstly, natural flake graphite is subjected to intercalation and oxidation reaction in an electrochemical reactor to obtain an oxidized graphene precursor; secondly, the oxidized graphene precursor is subjected to water washing and ultrasonic treatment; and finally, the formed slurry is subjected to ball milling to obtain the oxidized graphene with high single-layer rate. The application replaces centrifugal separation in the traditional method with ball milling, improves the single-layer rate of the oxidized graphene, avoids generation of waste, and thus improves the yield.
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Citation Information
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