Thin film deposition apparatus and thin film deposition method

Abstract

The application discloses a thin film deposition device, when the thin film deposition is finished, the rotating mechanism drives the heating tray to rotate the substrate from the first position to the second position, after the rotation is completed, the heating tray is separated from the substrate, the substrate is supported by the supporting ring, the rotating mechanism drives the heating tray to rotate to the third position, the supporting ring and the substrate remain in the second position, the heating tray contacts the substrate to carry out the next thin film deposition. The application compensates the non-uniformity of the deposited thin film on the substrate, realizes the uniformity and stability of the PECVD layer stack structure thin film deposition, avoids the phenomenon that the deposited thin film on the substrate deviates from the vertical direction in the subsequent etching process, and further guarantees the stability of the semiconductor device performance.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a thin film deposition apparatus and a thin film deposition method. Background Technology

[0002] In a vacuum processing chamber of plasma-enhanced chemical vapor deposition (PECVD), a layer stack structure of different materials is deposited onto a substrate. The substrate is placed in the vacuum processing chamber, and a first processing gas is first introduced to form a first layer of a first material on the substrate. Then, plasma and gas purification are performed, followed by the introduction of a second processing gas to form a second layer of a second material on the substrate. This plasma and gas purification process is repeated, and the first and second materials are stacked and deposited on the substrate to form a thin film with a layer stack structure. Three-dimensional (3D) storage can be fabricated from the layer stack structure of alternating thin film materials deposited on the substrate.

[0003] Currently, 3D storage utilizes alternating layers of oxide and nitride films through related processes to achieve data storage in three-dimensional structures. These stacked structures can include multiple layers of first and second materials, such as continuous stacks of more than 300 or even 500 layers.

[0004] Specifically, in some cases, the first and second material stack structures in the thin film material of a 3D memory stack can be oxide and silicon, silicon and doped silicon, or silicon and nitride. Correspondingly, the thin film materials of these material combinations for 3D memory stacks can mostly be applied to BiCS (Bit-Cost Scalable), TCAT (Terabit Cell Array Transistor), or other 3D memory structures. Alternatively, the first and second material stack structures can also be other material compositions, and the order in which the first and second material layers are deposited onto the substrate can be reversed.

[0005] However, existing PECVD equipment currently has the following problems:

[0006] 1. As the number of stacked layers on the substrate surface increases, the thickness of the film increases accordingly, which directly leads to a decrease in the uniformity between layers and the overall uniformity of the film after stacking. This results in the inability to obtain a vertical structure in the subsequent etching process, thus limiting the continuous increase of the number of film layers during the film stacking process.

[0007] Under current equipment conditions, when more than 200 thin films are deposited, the uniformity and quality of the films degrade. During the continuous stacking of different types of films, the deviation at a fixed position is continuously amplified, causing the uniformity of the substrate film to deviate from the controllable range. This makes it impossible for subsequent etching processes to achieve the precision of via etching, resulting in vias deviating from the vertical direction during the etching process, which in turn leads to the failure of semiconductor devices.

[0008] 2. Deformation of the gas spray head due to long-term use or extraction of waste gas by an external air pump can lead to uneven distribution of process gas supplied by the gas supply component. This can result in deviations in film thickness during thin film deposition, which in turn can cause the etched vias to deviate from the vertical direction during the etching process, ultimately leading to the failure of semiconductor devices.

[0009] 3. In traditional PECVD deposition of thin films, a heating tray needs to be fixed to ensure its flatness. However, while the heating tray is fixed, the temperature distribution of the substrate will form a fixed pattern, which will cause uneven heating of the substrate. This will lead to the etching of vias deviating from the vertical direction during the etching process, and further lead to the failure of semiconductor devices.

[0010] In summary, it is necessary to propose a new thin film deposition apparatus and method to solve the above problems. Summary of the Invention

[0011] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a thin film deposition apparatus and a thin film deposition method to solve the problem of poor uniformity of thin films deposited on substrates in the prior art.

[0012] To achieve the above and other related objectives, the present invention provides a thin film deposition apparatus, comprising:

[0013] Processing chambers are used for thin film deposition;

[0014] A heating tray for supporting and heating a substrate, the heating tray being configured with a substrate support portion having a central protrusion and an edge portion for placing a support ring;

[0015] The support mechanism includes a support ring disposed around the base plate support portion and a support shaft for supporting the support ring;

[0016] A lifting mechanism is used to drive the support shaft to lift and / or drive the heating tray to lift.

[0017] A rotating mechanism is used to drive the heating tray to rotate;

[0018] The thin film deposition apparatus is configured such that: after one thin film deposition is completed, the rotating mechanism drives the heating tray and the substrate to rotate from a first position to a second position; after the rotation is completed, the heating tray separates from the substrate, and the substrate is supported by the support ring; the rotating mechanism drives the heating tray to rotate to a third position, while the support ring and the substrate remain in the second position; after the heating tray contacts the substrate, the next thin film deposition is performed.

[0019] Preferably, the third position is the same as the first position.

[0020] Preferably, the inner diameter of the support ring is larger than the outer diameter of the substrate support portion.

[0021] Preferably, the support shaft and the support ring are not fixedly connected.

[0022] Preferably, the surface height difference between the substrate support portion and the edge portion is the same as the thickness of the support ring.

[0023] Preferably, the thickness of the support ring is 0.3-0.7 mm.

[0024] Preferably, the support ring is fixedly connected to the support shaft.

[0025] Preferably, the height difference between the substrate support portion and the edge portion is 1.5-2.9 mm.

[0026] Preferably, the thickness of the support ring is 0.3-0.7 mm.

[0027] Preferably, when the rotating mechanism drives the heating tray to rotate along with the substrate, the support ring remains in a non-contact state with the heating tray and the substrate.

[0028] The present invention also provides a thin film deposition method, comprising:

[0029] The substrate is placed in the processing chamber, and a thin film of a first thickness is deposited on the substrate;

[0030] The heating tray rotates the substrate from the first position to the second position;

[0031] The heating tray separates from the substrate, the support ring supports the substrate, and the heating tray rotates from the second position to the third position;

[0032] The heated tray comes into contact with the substrate to deposit a film of a second thickness.

[0033] Preferably, the first position is the same as the third position.

[0034] Preferably, the separation of the heating tray from the substrate is achieved by a lifting mechanism driving the heating tray to descend.

[0035] Preferably, the separation of the heating tray from the substrate is achieved by a lifting mechanism that drives the heating tray to descend and the support shaft to rise.

[0036] Preferably, the separation of the heating tray from the substrate is achieved by a lifting mechanism driving the support shaft to rise.

[0037] Preferably, the support shaft and the support ring are not fixedly connected, and the support and separation between them are achieved through relative movement.

[0038] Preferably, when depositing a thin film on the substrate, the upper surface of the support ring is attached to the substrate, and the lower surface of the support ring is attached to the heating tray.

[0039] Preferably, when the heating tray drives the substrate to rotate, the support ring is separated from the support shaft, and the support ring is driven to rotate together by the heating tray.

[0040] Preferably, the support ring is fixedly connected to the support shaft, and the support shaft drives the support ring to rise and fall.

[0041] Preferably, after the support shaft drives the support ring to descend to a point where it no longer contacts the substrate and the heating tray, the heating tray drives the substrate to rotate, while the support ring does not rotate.

[0042] This invention solves the problem of poor film uniformity when depositing multiple layers (e.g., >200 layers). It enables uniformity and stability of PECVD layer stack structure film deposition when the number of film layers exceeds 200, and avoids the phenomenon of the etched vias deviating from the vertical direction during subsequent etching processes, thereby ensuring the stability of semiconductor device performance. Attached Figure Description

[0043] Figure 1 A schematic diagram illustrating the tilting of a high-layer film deposited using a PECVD thin film deposition technique is provided.

[0044] Figure 2A and Figure 2B The following are schematic diagrams illustrating the thin film deposition apparatus in Embodiment 1 of the present invention before and after the substrate is lifted.

[0045] Figure 3A and Figure 3B The following are examples of top views before and after the pin is rotated to the set angle in Embodiment 1 provided by the present invention.

[0046] Figure 4A and Figure 4B The following are schematic diagrams illustrating the thin film deposition apparatus in Embodiment 5 of the present invention before and after the substrate is lifted.

[0047] Figure 5 A top view of the support ring in Embodiment 5 of the present invention is shown as an example.

[0048] Figure 6A and Figure 6B The following are schematic diagrams illustrating the thin film deposition apparatus in Embodiment 6 of the present invention before and after the substrate is lifted.

[0049] Figure 7 A top view of the ejector pin and support ring in Embodiment 6 of the present invention is shown.

[0050] Figures 8A to 8D Schematic diagrams illustrating the substrate rotation of the present invention at different preset angles are provided.

[0051] Figure 9 Schematic diagrams of the thin film deposition apparatus in Embodiments 7 and 10 of the present invention are provided.

[0052] Figure 10 Schematic diagrams of the thin film deposition apparatus in Embodiments 8 and 11 provided by the present invention are illustrated.

[0053] Figure 11 A schematic diagram of the thin film deposition apparatus in Embodiment 9 of the present invention is provided as an example.

[0054] Figure 12A This diagram illustrates how uneven gas distribution in the gas supply component of existing PECVD thin film deposition technologies can lead to uneven film deposition.

[0055] Figure 12B A schematic diagram illustrating the uneven deposition of thin films caused by the extraction of waste gas by an air pump in existing PECVD thin film deposition technology is provided.

[0056] Figure 13A A schematic diagram of the thin film deposition apparatus in Embodiment 12 of the present invention is provided as an example.

[0057] Figures 13B to 13C The diagrams illustrate the downward stretching and upward compression of the sidewalls of the gas regulating component in Embodiment 12 of the present invention.

[0058] Figure 14A A schematic diagram of the thin film deposition apparatus in Embodiment 13 of the present invention is provided as an example.

[0059] Figures 14B to 14C The diagrams illustrate the upward compression and downward extension of the telescopic rod in Embodiment 13 provided by the present invention.

[0060] Figures 15A to 15B The following are schematic flowcharts of the thin film deposition method in Embodiment 14 provided by the present invention.

[0061] Figure 16 A schematic flowchart of the thin film deposition method in Embodiment 18 provided by the present invention is illustrated.

[0062] Figure 17 A schematic flowchart of the thin film deposition method in Embodiment 19 of the present invention is provided as an example.

[0063] Figure 18 A schematic flowchart of the thin film deposition method in Embodiment 20 of the present invention is provided.

[0064] Figure 19 A schematic flowchart of the thin film deposition method in Embodiment 21 of the present invention is provided as an example.

[0065] Figures 20A to 20K The following are schematic diagrams illustrating the arrangement of the thin film deposition apparatus in Embodiments 22 and 23 provided by the present invention.

[0066] Figure 21 A schematic diagram of the thin film deposition apparatus in Embodiment 25 of the present invention is provided as an example.

[0067] Figure 22-23 A schematic diagram of the thin film deposition apparatus in Embodiment 26 of the present invention is provided as an example.

[0068] Figure 24-25 A schematic diagram of the thin film deposition apparatus in Embodiment 27 of the present invention is provided as an example.

[0069] Figure 26-27 A schematic diagram of the thin film deposition apparatus in Embodiment 28 of the present invention is provided as an example.

[0070] Figures 28-29 A schematic diagram of the thin film deposition apparatus in Embodiment 29 of the present invention is provided as an example.

[0071] Figures 30-31 A schematic diagram of the thin film deposition apparatus in Embodiment 30 of the present invention is provided as an example.

[0072] Figures 32-33 A schematic diagram of the thin film deposition apparatus in Embodiment 31 of the present invention is provided as an example.

[0073] Figure 34 The connection relationship between the controller and various components provided by the present invention is illustrated.

[0074] Figures 35-36 A schematic diagram of the thin film deposition apparatus in Embodiment 32 of the present invention is provided as an example.

[0075] Figure 37 A schematic diagram illustrating the arrangement of multiple sets of ejector pins in Embodiment 33 of the present invention is provided.

[0076] Figure 38 A schematic diagram of the thin film deposition apparatus in Embodiment 34 of the present invention is provided as an example.

[0077] Figure 39 Example Figure 38 A magnified view of a portion of region A in the middle.

[0078] Figure 40A-40D The process flow diagrams of the thin film deposition apparatus in Embodiment 34 provided by the present invention are illustrated respectively;

[0079] Figure 41 A schematic diagram of the thin film deposition apparatus in Embodiment 35 of the present invention is provided as an example.

[0080] Figure 42 Example Figure 41 A magnified view of a portion of region B in the middle.

[0081] Figures 43A-43D The process flow diagrams of the thin film deposition apparatus in Embodiment 35 provided by the present invention are illustrated respectively; Detailed Implementation

[0082] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0083] It should be understood that when a component is referred to as "on another component," "connected to another component," "coupled to another component," or "in contact with another component," it can be directly on, connected to, coupled to, or in contact with that other component, or there may be an inserting component. In contrast, when a component is referred to as "directly on another component," "directly connected to," "directly coupled to," or "directly in contact with" another component, there is no inserting component.

[0084] Please see Figures 1 to 37 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Although the illustrations only show components related to the present invention and are not drawn according to the actual number, shape and size of the components, the shape, quantity and proportion of each component can be arbitrarily changed in actual implementation, and the layout of the components may also be more complex.

[0085] Example 1

[0086] During PECVD thin film deposition, uneven temperature distribution on the heating tray or variations in substrate flatness due to stress can lead to poor uniformity in the deposition process. When different materials are alternately deposited on the substrate, the thickness of the film formed on the substrate increases as the number of layers of the first and second materials stacked alternately on the substrate w increases, such as... Figure 1 As shown, this results in a tilt of the stacked thin film at a certain angle Δ. That is, as the number of stacked layers increases, the uniformity of the film after stacking deteriorates, causing the uniformity of the film on the substrate w to deviate from a controllable range. This makes it impossible for subsequent etching processes to achieve the precision of via etching, resulting in vias deviating from the vertical direction during the etching process, which in turn leads to the failure of the semiconductor device.

[0087] To address the aforementioned problems, this embodiment 1 provides a thin film deposition apparatus. Specifically, see [link to relevant documentation]. Figure 2A , Figure 2B and Figure 34 As shown, the thin film deposition apparatus includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating the substrate w; an RF source 5 for providing RF power to form an RF electric field inside the processing chamber 1, exciting the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas performs thin film deposition on the substrate w; a rotation mechanism 403 for controlling the rotation of the substrate w, wherein the rotation axis AA' is perpendicular to and passes through the substrate w; and a controller connected to the gas supply assembly 2, the RF source 5, the heating tray 3, and the rotation mechanism 403 respectively, for controlling the operation of the gas supply assembly 2, the RF source 5, the heating tray 3, and the rotation mechanism 403. The controller is also configured to build a program menu, the program menu including keeping the RF source 5 in an on state while the substrate w rotates. In this embodiment 1, the rotation axis AA' passes through the center O of the substrate w, causing the substrate w to rotate around the rotation axis AA'.

[0088] When the rotating mechanism 403 drives the substrate w to rotate, it stops supplying process gas into the processing chamber 1 and instead introduces inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1 and keep the RF source 5 in the open state. Because some impurity particles are suspended inside the processing chamber 1 after a certain number of thin films are deposited on the substrate w, keeping the RF source 5 in the open state fills the processing chamber 1 with an RF electric field. The impurity particles become charged under the action of the RF electric field inside the processing chamber 1, and the charged impurity particles remain suspended and do not fall onto the surface of the substrate w, effectively preventing impurity particles from falling onto the thin film deposited on the substrate w and avoiding contamination of the thin film deposited on the substrate w.

[0089] Therefore, in this embodiment 1, the substrate w is driven to rotate while the RF source 5 is kept on, which compensates for the unevenness of the film thickness deposited on the substrate w, realizes the uniformity and stability of the film deposition of the PECVD layer stack structure, and avoids the phenomenon that the through holes of the film deposited on the substrate w deviate from the vertical direction during the subsequent etching process, thereby further ensuring the stability of the semiconductor device performance.

[0090] Among them, such as Figure 2A and Figure 2B As shown, the thin film deposition apparatus further includes: a support member for supporting the substrate w; and a lifting mechanism 402 connected to the support member for driving the support member to rise or fall vertically to lift the substrate w away from the heating tray 3 or place the substrate w on the heating tray 3. The lifting mechanism 402 is connected to a controller, which controls the operation of the lifting mechanism 402.

[0091] In this embodiment 1, the rotating mechanism 403 is disposed at the bottom end of the lifting mechanism 402 and is used to drive the support member and the lifting mechanism 402 to rotate synchronously in the horizontal circumferential direction, so as to drive the substrate w to rotate.

[0092] In this embodiment 1, the support member is a pin 401 that can move vertically and horizontally. The heating tray 3 has a first through hole 301, and the pin 401 is disposed within the first through hole 301. Figure 3A and Figure 3B As shown, the cross-section of the first through hole 301 in the horizontal plane is arc-shaped or circular, and the center M of the arc or circle is on the same vertical line as the center O of the substrate w.

[0093] In this embodiment 1, the lifting mechanism 402 can be a cylinder 402, which is connected to the bottom of the ejector pin 401; the rotating mechanism 403 can be a motor 403, which is connected to the bottom of the cylinder 402. The cylinder 402 drives the ejector pin 401 to rise or fall, and the motor 403 drives the cylinder 402 and the ejector pin 401 to rotate synchronously.

[0094] When it is necessary to rotate the substrate w, such as Figure 2B As shown, the lifting mechanism 402 drives the ejector pin 401 to rise vertically and extend from the first through hole 301. The ejector pin 401 lifts the substrate w, causing the substrate w to detach from the heating tray 3. Then, the rotating mechanism 403 drives the ejector pin 401 to move along an arc-shaped trajectory in the first through hole 301, causing the substrate w to rotate by a set angle, such as... Figure 3A and Figure 3B As shown; after the substrate w rotates to a set angle, the substrate w stops rotating, and the lifting mechanism 402 drives the ejector pin 401 to move downward in the vertical direction, placing the substrate w on the heating tray 3 for subsequent thin film deposition.

[0095] There can be at least three ejector pins 401, and correspondingly, there are at least three first through holes 301, each corresponding to one ejector pin 401. In this embodiment 1, as... Figure 3A and Figure 3B As shown, there are three ejector pins 401, and three corresponding first through holes 301. The cross-section of the three first through holes 301 in the horizontal plane is three arc shapes.

[0096] In this embodiment 1, at least three ejector pins 401 are used to lift the substrate w and rotate the substrate w by a set angle, which compensates for the unevenness of the film thickness deposited on the substrate w, realizes the uniformity and stability of the film deposition of the PECVD layer stack structure, and avoids the phenomenon that the etched vias deviate from the vertical direction during the subsequent etching process of the film deposited on the substrate w, thereby further ensuring the stability of the semiconductor device performance.

[0097] The processing chamber 1 has a door 101 on its side wall, which is used for a robot to enter the processing chamber 1 before and after the thin film deposition process on the substrate w, and to place or remove the substrate w from the heating tray 3.

[0098] Wherein, after the thin film deposition is completed, (number of times substrate w rotates + 1) * the set angle of each rotation of substrate w = 360°. In this embodiment 1, as... Figures 8A to 8D As shown, after the thin film deposition is completed, the substrate w rotates 5 times, and the set angle for each rotation is 60 degrees; alternatively, the substrate w rotates 3 times, and the set angle for each rotation is 90 degrees; alternatively, the substrate w rotates 2 times, and the set angle for each rotation is 120 degrees; or the substrate w rotates 1 time, and the set angle for each rotation is 180 degrees.

[0099] The deposition rate of the thin film on the substrate w is related to the multiple of the RF power of the RF source 5; the high frequency of the RF source 5 is an integer multiple of 13.56MHz n, and n satisfies: n=1,2,3,…,8; the low frequency range of the RF source 5 is 20KHz-400KHz.

[0100] However, during the rotation of the substrate w, while the RF source 5 remains on, after the substrate w detaches from the heating tray 3, the gap between the back of the substrate w and the heating tray 3 becomes too large, easily leading to arc discharge. Therefore, in this embodiment 1, to avoid arc discharge when the substrate w detaches from the heating tray 3 while the RF source 5 is on, such as... Figure 2A and Figure 2BAs shown, the gap between the substrate w and the heating tray 3 needs to be adjusted to be less than a set value to prevent the substrate w from detaching from the heating tray 3 in the plasma gas atmosphere, which could lead to arc discharge. In this embodiment 1, the set value of the gap between the substrate w and the heating tray 3 is m, 0 < m ≤ 5 mm. Therefore, under the condition that the gap between the substrate w and the heating tray 3 is less than the set value, the RF source 5 is kept in the on state, reducing the risk of arc discharge of the substrate w and ensuring the safety and stability of the thin film deposition process.

[0101] Example 2

[0102] This embodiment 2 provides a thin film deposition apparatus, which differs from that of embodiment 1 in that:

[0103] like Figure 2A and Figure 2B As shown, the heating tray 3 is provided with a second through hole 302. During the rotation of the substrate w, the radio frequency source 5 is kept in the open state. A non-process gas is introduced into the gap between the substrate w and the heating tray 3 through the second through hole 302 to reduce the risk of arc discharge when the substrate w is removed from the heating tray 3. In this embodiment 2, the non-process gas is an inert gas or nitrogen.

[0104] Because some impurity particles are suspended inside the processing chamber 1 after a certain number of thin films are deposited on the substrate w, keeping the RF source 5 on fills the processing chamber 1 with an RF electric field. The impurity particles become charged under the influence of this field, remaining suspended and preventing them from falling onto the substrate w surface. This effectively prevents impurity particles from falling onto the deposited thin film on the substrate w, thus avoiding contamination. Therefore, keeping the RF source 5 on reduces the risk of arc discharge on the substrate w and ensures the safety and stability of the thin film deposition process when the gap between the substrate w and the heating tray 3 is filled with non-process gas.

[0105] The other settings in this embodiment are the same as in Embodiment 1, and will not be repeated here.

[0106] Example 3

[0107] This embodiment 3 provides a thin film deposition apparatus, which differs from that of embodiment 1 in that:

[0108] During the rotation of substrate w, the RF source 5 is kept on and its RF power is reduced to be less than that of the RF source 5 during the thin film deposition process. This reduces the risk of arc discharge when substrate w is removed from the heating tray 3, thus ensuring the safety and stability of the thin film deposition process.

[0109] The other settings in this embodiment are the same as in Embodiment 1, and will not be repeated here.

[0110] Example 4

[0111] This embodiment 4 provides a thin film deposition apparatus, which differs from that of embodiment 1 in that:

[0112] Before the substrate w is rotated, the radio frequency source 5 is turned off, and the processing chamber 1 is cleaned.

[0113] Because impurity particles will exist inside the processing chamber 1 after a certain number of thin films are deposited on the substrate w, the dirtier the processing chamber 1 is, the more likely arc discharge will occur when the substrate w is removed from the heating tray 3 inside the processing chamber 1. Therefore, it is preferable to turn off the radio frequency source 5 and supply nitrogen gas into the processing chamber 1 through the gas supply component 2 before the substrate w is rotated to purify the processing chamber 1.

[0114] The other settings in this embodiment are the same as in Embodiment 1, and will not be repeated here.

[0115] Example 5

[0116] Please see Figures 4A to 5 This embodiment 5 provides a thin film deposition apparatus, which differs from that of embodiment 1 in that:

[0117] like Figure 4A and Figure 4B As shown, the support member is a support ring 404 disposed at the bottom edge of the substrate w. The support ring 404 can be raised and lowered in the vertical direction and rotated about the center line AA' of the substrate w as the rotation axis.

[0118] In this embodiment 5, as Figure 5 As shown, the support ring 404 is a circular ring with a notch a, or the support ring 404 includes multiple arc segments located on the same circle. Correspondingly, a door 101 is provided on the side wall of the processing chamber 1, for a robot arm to enter the processing chamber 1 before and after the thin film deposition process on the substrate w, and place the substrate w on the support ring 404 or remove the substrate w from the support ring 404.

[0119] like Figure 4A and Figure 4B As shown, when the substrate w needs to be rotated, the lifting mechanism 402 drives the support ring 404 to rise vertically, lifting the substrate w and causing it to detach from the heating tray 3; then the rotation mechanism 403 drives the support ring 404 to rotate, causing the substrate w to rotate by a set angle; after the substrate w rotates by the set angle, it stops rotating, and the lifting mechanism 402 drives the support ring 404 to move vertically downward, placing the substrate w on the heating tray 3 for thin film deposition.

[0120] In this embodiment 5, a support ring 404 disposed at the bottom of the outer periphery of the substrate w is used to lift the substrate w to adjust the rotation angle of the substrate w, so as to realize the substrate w rotates around the rotation axis AA', which compensates for the unevenness of the film thickness deposited on the substrate w and realizes the uniformity and stability of the film deposition of the PECVD layer stack structure.

[0121] The other settings in this embodiment are the same as in Embodiment 1, and will not be repeated here.

[0122] Example 6

[0123] Please see Figures 6A to 7 This embodiment 6 provides a thin film deposition apparatus, which differs from that of embodiment 1 in that:

[0124] like Figures 6A to 7 As shown, the thin film deposition apparatus further includes: a support member for supporting the substrate w, wherein the support member includes a pin 401 and a support ring 404; a first lifting mechanism 402 connected to the pin 401 for driving the pin 401 to rise or fall vertically, for a robotic arm to remove the substrate w from the heating tray 3 or place the substrate w on the heating tray 3; and a second lifting mechanism 405 connected to the support ring 404 for driving the support ring 404 to rise or fall vertically, so as to lift the substrate w away from the heating tray 3 or place the substrate w on the heating tray 3.

[0125] In this embodiment 6, the rotating mechanism 403 is disposed at the bottom of the second lifting mechanism 405, and is used to drive the support ring 404 and the second lifting mechanism 405 to rotate synchronously about the center line AA' of the substrate w, so as to drive the substrate w to rotate.

[0126] like Figure 6A and Figure 6B As shown, the heating tray 3 has a first through hole 301, and the ejector pin 401 is disposed in the first through hole 301 for passing through the first through hole 301 to support the substrate w.

[0127] When the robotic arm places the substrate w into the processing chamber 1, the first lifting mechanism 402 drives the ejector pin 401 to rise vertically and extend from the first through-hole 301 to support the substrate w placed by the robotic arm. Then, the first lifting mechanism 402 drives the ejector pin 401 to descend vertically and retract into the first through-hole 301, placing the substrate w on the heating tray 3 for subsequent thin film deposition. When the robotic arm removes the substrate w from the processing chamber 1, the first lifting mechanism 402 drives the ejector pin 401 to rise vertically and extend from the first through-hole 301, lifting the substrate w from the heating tray 3 for easy removal by the robotic arm. Then, the first lifting mechanism 402 drives the ejector pin 401 to descend vertically and retract into the first through-hole 301.

[0128] When it is necessary to rotate the substrate w, the second lifting mechanism 405 drives the support ring 404 to rise vertically, lifting the substrate w and causing it to detach from the heating tray 3; then the rotation mechanism 403 drives the support ring 404 to rotate to rotate the substrate w by a set angle; after the substrate w has rotated by the set angle, it stops rotating, and the second lifting mechanism 405 drives the support ring 404 to move vertically downward, placing the substrate w on the heating tray 3 for thin film deposition.

[0129] The other settings in this embodiment are the same as in Embodiment 1, and will not be repeated here.

[0130] Example 7

[0131] like Figure 9 As shown, this embodiment 7 provides a thin film deposition apparatus. The thin film deposition apparatus includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating a substrate w; a radio frequency source 5 for providing radio frequency power to form a radio frequency electric field inside the processing chamber 1, exciting the process gas inside the processing chamber 1 to dissociate into plasma gas, which then deposits a thin film on the substrate w; and a rotating mechanism 403 connected to the heating tray 3 for driving the heating tray 3 to rotate about an axis AA' passing through the center of the substrate w, thereby causing the substrate w to rotate synchronously.

[0132] When the rotating mechanism 403 drives the heating tray 3 and the substrate w to rotate, it stops the flow of process gas into the processing chamber 1 and introduces inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1 and keep the RF source 5 in the open state.

[0133] In this embodiment 7, the heating tray 3 drives the substrate w to rotate synchronously around the axis AA' passing through the center of the substrate w, which includes: the heating tray 3 rotates in the forward direction around the axis AA' by a set angle, and then rotates in the reverse direction around the axis AA'.

[0134] Example 8

[0135] like Figure 10 As shown, this embodiment 8 provides a thin film deposition apparatus. The thin film deposition apparatus includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating a substrate w; and a radio frequency source 5 for providing radio frequency power to form a radio frequency electric field inside the processing chamber 1, exciting the process gas inside the processing chamber 1 to dissociate into plasma gas, and then depositing a thin film on the substrate w using the dissociated plasma gas.

[0136] The thin film deposition apparatus further includes: a support member for supporting the substrate w, wherein the support member is a support ring 404 disposed at the bottom edge of the substrate w; and a lifting mechanism 402 connected to the support ring 404 for driving the support ring 404 to rise or fall in the vertical direction to lift the substrate w away from the heating tray 3 or place the substrate w on the heating tray 3.

[0137] In this embodiment 8, the rotating mechanism 403 is connected to the heating tray 3 and is used to drive the heating tray 3 to rotate around the axis AA' passing through the center of the substrate w.

[0138] When the rotating mechanism 403 drives the heating tray 3 to rotate, it stops the flow of process gas into the processing chamber 1 and introduces inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1 and keep the radio frequency source 5 in the open state.

[0139] In this embodiment 8, the rotation of the heating tray 3 around the axis AA' passing through the center of the substrate w includes: the heating tray 3 rotates in the forward direction around the axis AA' by a set angle, and then rotates in the reverse direction around the axis AA'.

[0140] like Figure 10 As shown, when the heating tray 3 needs to be rotated, the lifting mechanism 402 drives the support ring 404 to rise vertically, lifting the substrate w and causing the substrate w to detach from the heating tray 3. Then, the rotating mechanism 403 drives the heating tray 3 to rotate by a set angle. After the heating tray 3 rotates by the set angle, it stops rotating. The lifting mechanism 402 drives the support ring 404 to move vertically downward, placing the substrate w on the heating tray 3 for thin film deposition.

[0141] Example 9

[0142] like Figure 11 As shown, this embodiment 9 provides a thin film deposition apparatus, which includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating a substrate w; a radio frequency source 5 for providing radio frequency power to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the plasma gas performs thin film deposition on the substrate w; and a rotating mechanism 403 connected to the gas supply assembly 2 for driving the gas supply assembly 2 to rotate.

[0143] In this embodiment 9, the rotating mechanism 403 can be a motor 403, which is connected to the gas supply assembly 2 and drives the gas supply assembly 2 to rotate. In this embodiment 9, after multiple substrates w are sequentially placed into the processing chamber 1 to complete the thin film deposition process, the rotating mechanism 403 drives the gas supply assembly 2 to rotate by a set angle.

[0144] Preferably, when the rotating mechanism 403 drives the gas supply assembly 2 to rotate, it stops supplying process gas into the processing chamber 1 and introduces inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1 and keep the RF source 5 in the open state. Because after a certain number of thin films are deposited on the substrate w, some impurity particles are suspended inside the processing chamber 1. At this time, keeping the RF source 5 in the open state fills the processing chamber 1 with an RF electric field. The impurity particles are charged under the action of the RF electric field inside the processing chamber 1. The charged impurity particles remain suspended and will not fall onto the surface of the substrate w, effectively preventing impurity particles from falling onto the thin film deposited on the substrate w and avoiding contamination of the thin film deposited on the substrate w.

[0145] By rotating the gas supply component 2, the uniformity of the process gas supplied by the gas supply component 2 is improved, thereby improving the thickness uniformity of the thin film deposited on the substrate w, and realizing the uniformity and stability of the thin film deposition of the PECVD layer stack structure.

[0146] Example 10

[0147] like Figure 9 As shown, this embodiment 10 provides a thin film deposition apparatus, which differs from embodiment 7 in that:

[0148] The rotating mechanism 403 is connected to the heating tray 3 and is used to drive the heating tray 3 to rotate around the axis AA' passing through the center of the substrate w, thereby causing the substrate w to rotate synchronously. When the rotating mechanism 403 drives the heating tray 3 to rotate synchronously with the substrate w, the radio frequency source 5 is adjusted to the off state.

[0149] The other settings in this embodiment are the same as in Embodiment 7, and will not be repeated here.

[0150] Example 11

[0151] like Figure 10 As shown, this embodiment 11 provides a thin film deposition apparatus, which differs from embodiment 8 in that:

[0152] When the rotating mechanism 403 drives the heating tray 3 to rotate, the radio frequency source 5 is adjusted to the off state.

[0153] The other settings in this embodiment are the same as in Embodiment 8, and will not be repeated here.

[0154] Example 12

[0155] In PECVD, due to the deformation caused by long-term use of the gas supply component 2, the process gas delivered into the processing chamber 1 is unevenly distributed, resulting in different gas flow rates at different locations on the substrate. This leads to deviations in the thickness of the thin film deposited by the plasma gas on the substrate, causing the etched vias to deviate from the vertical direction during the etching process, ultimately leading to the failure of the semiconductor device.

[0156] like Figure 12A As shown, when the process gas is introduced into the gas supply component 2, the gas flow rate at the central position of the gas supply component 2 is greater than the gas flow rate at the outer periphery of the gas supply component 2. As a result, in the thin film deposition process, the thickness of the thin film deposited on the substrate w at the central position is greater than the thickness at the outer periphery. This causes the thin film stacked on the surface of the substrate w to tilt at a certain angle Δ, resulting in uneven thickness of the thin film deposited on the substrate w. Consequently, this leads to defects in the etching process, such as the etched vias deviating from the vertical direction.

[0157] like Figure 12B As shown, the processing chamber 1 is connected to an air pump to extract waste gas during the deposition process. However, the air pump's extraction of waste gas can easily cause the gas flow rate at the outer periphery of the gas supply component 2 to be greater than the gas flow rate at the center of the gas supply component 2. This results in the thickness of the film deposited on the substrate w being less at the center than at the outer periphery during the thin film deposition process. Similarly, it causes the stacked film on the surface of the substrate w to tilt at a certain angle Δ, resulting in uneven film thickness on the substrate w. Consequently, this leads to defects such as the etched vias deviating from the vertical direction during subsequent etching processes.

[0158] To address the aforementioned issue of uneven deposition at the outer periphery and center of the deposited film, please refer to [link to relevant documentation]. Figures 13A to 13C As shown, this embodiment 12 provides a thin film deposition apparatus, specifically, as follows: Figure 13AAs shown, the thin film deposition apparatus includes: a processing chamber 1 for thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1, the gas supply assembly 2 having a first porous plate 21; a heating tray 3 located below the gas supply assembly 2 for supporting and heating the substrate w; and a gas regulating unit 200 disposed inside the gas supply assembly 2, with a second porous plate 201 at its bottom end, the second porous plate 201 being disposed opposite to the first porous plate 21 of the gas supply assembly 2. Adjusting the gap between the second porous plate 201 and the first porous plate 21 regulates the airflow direction of the process gas inside the gas supply assembly 2, allowing the process gas inside the gas supply assembly 2 to be fully mixed, thereby improving the non-uniformity of plasma gas distribution inside the processing chamber 1, achieving uniformity and stability of thin film deposition on the stacked structure of the substrate w in PECVD, and preventing the phenomenon of etched vias deviating from the vertical direction during subsequent etching processes, thus further ensuring the stability of semiconductor device performance. In addition, the thin film deposition apparatus also includes a controller, which is connected to the gas supply component 2, the heating tray 3, and the gas regulating unit 200 respectively. The controller is used to control the operation of the gas supply component 2, the heating tray 3, and the gas regulating unit 200.

[0159] like Figure 13A As shown, the thin film deposition apparatus also includes a radio frequency (RF) source 5, which provides RF power to form an RF electric field inside the processing chamber 1. This field excites the process gas inside the processing chamber 1 to dissociate into plasma gas, which then deposits a thin film on the substrate w. The high-frequency range of the RF source 5 is an integer multiple of 13.56 MHz, n, where n = 1, 2, 3, ..., 8; the low-frequency range of the RF source 5 is 20 kHz to 400 kHz.

[0160] like Figures 13B to 13C As shown, the sidewall 202 of the gas conditioning component 200 can be stretched or contracted in the vertical direction to adjust the gap between the second porous plate 201 and the first porous plate 21, so that the process gas inside the gas supply component 2 can be fully mixed, thereby improving the defect of uneven film deposition on the substrate w surface caused by uneven distribution of plasma gas during the thin film deposition process.

[0161] In this embodiment 12, as Figure 13B and Figure 13CAs shown, the sidewall 202 of the gas conditioning component 200 is a bellows, which can be stretched downward or contracted upward in the vertical direction, so that the second porous plate 201 at the bottom of the gas conditioning component 200 is in a certain bent or arc shape, so as to adjust the gap between the second porous plate 201 and the first porous plate 21, so that the process gas inside the gas supply component 2 can be fully mixed, thereby improving the defect of uneven plasma gas distribution causing uneven film deposition on the substrate w surface.

[0162] Example 13

[0163] Please see Figures 14A to 14C This embodiment 13 provides a thin film deposition apparatus, which differs from embodiment 12 in that:

[0164] The gas conditioning assembly 200 includes a telescopic rod 203, which is connected to the second perforated plate 201. The telescopic rod 203 can be stretched or contracted in the vertical direction, so that the second perforated plate 201 is in a certain bent or arc shape to adjust the gap between the second perforated plate 201 and the first perforated plate 21. This allows the process gas inside the gas supply assembly 2 to be fully mixed, thereby improving the defect of uneven plasma gas distribution inside the processing chamber 1, which leads to uneven film deposition on the substrate w surface.

[0165] In this embodiment 13, as Figure 14A As shown, the telescopic rod 203 is located at the center of the gas regulating unit 200 and is connected to the center of the second perforated plate 201.

[0166] The other settings in this embodiment are the same as in embodiment twelve, and will not be repeated here.

[0167] Example 14

[0168] To address the issue of uneven thin film deposition on the substrate surface in existing technologies, please refer to [link to relevant documentation]. Figures 2A to 10 and Figure 15A This embodiment 14 provides a thin film deposition method, which is implemented based on the thin film deposition apparatus in embodiments 1-8 and 10-11 above.

[0169] Specifically, the thin film deposition method includes the following steps:

[0170] Step S1: Place the substrate w in the PECVD processing chamber 1 and evacuate the processing chamber 1 so that the substrate w to be deposited is in a vacuum environment.

[0171] Step S2: Introduce process gas into the processing chamber 1 and turn on the radio frequency source 5 to dissociate the process gas inside the processing chamber 1 into plasma gas and deposit a certain number of thin films on the substrate w.

[0172] Step S3: Stop the flow of process gas into the processing chamber 1 and introduce a non-process gas, such as an inert gas or nitrogen, into the processing chamber 1 to maintain the pressure inside the processing chamber 1.

[0173] Step S4: Keep the radio frequency source 5 in the on state, rotate the substrate w, or rotate the heating tray 3, or rotate the substrate w and the heating tray 3 synchronously by a set angle.

[0174] Step S5: Process gas is introduced into the processing chamber 1 again, and then a certain number of thin films are deposited on the substrate w.

[0175] Step S6: Stop the flow of process gas into the processing chamber 1, and introduce a non-process gas, such as an inert gas or nitrogen, into the processing chamber 1 to maintain the pressure inside the processing chamber 1.

[0176] Step S7: Determine whether the number of thin film layers deposited on the substrate w meets the set number of layers; if not, repeat steps S2-S6 above; if yes, proceed to step S8.

[0177] Step S8: Remove the substrate w from the processing chamber 1 of PECVD to complete the thin film deposition process of the substrate w.

[0178] The rotation axis AA' of the substrate w, or the heating tray 3, or the substrate w and the heating tray 3 rotating synchronously, is perpendicular to and passes through the center O of the substrate w.

[0179] The thin film deposited on the substrate w comprises alternating deposition of a first material and a second material. In this embodiment 14, the first material is silicon oxide and the second material is silicon nitride.

[0180] The thin film deposition method further includes: after each material is deposited on the surface of the substrate w, the waste gas in the processing chamber 1 needs to be extracted before proceeding with subsequent process steps.

[0181] When the substrate w is rotated, or the heating tray 3 is rotated, or the substrate w and the heating tray 3 are rotated synchronously, the process gas is stopped, and an inert gas or nitrogen is introduced to maintain the pressure inside the processing chamber 1, and the RF source 5 is kept in the open state. Because after a certain number of thin films are deposited on the substrate w, some impurity particles are suspended inside the processing chamber 1. At this time, by keeping the RF source 5 in the open state, the processing chamber 1 is filled with an RF electric field. The impurity particles are charged under the action of the RF electric field inside the processing chamber 1. The charged impurity particles remain suspended and will not fall onto the surface of the substrate w, effectively preventing impurity particles from falling onto the thin film deposited on the substrate w and avoiding contamination of the thin film deposited on the substrate w.

[0182] After thin film deposition, (number of substrate rotations + 1) * set angle of substrate w rotation per rotation = 360°. In this embodiment 14, as... Figures 8A to 8D As shown, after the thin film deposition is completed, the substrate w rotates 5 times, and the set angle for each rotation is 60 degrees; alternatively, the substrate w rotates 3 times, and the set angle for each rotation is 90 degrees; alternatively, the substrate w rotates 2 times, and the set angle for each rotation is 120 degrees; alternatively, the substrate w rotates 1 time, and the set angle for each rotation is 180 degrees.

[0183] However, when the substrate w or the heating tray 3 rotates, and the RF source 5 remains on, the gap between the back of the substrate w and the heating tray 3 becomes too large after the substrate w detaches from the heating tray 3, which can easily lead to arc discharge. Therefore, in this embodiment 14, to prevent arc discharge when the substrate w detaches from the heating tray 3 while the RF source 5 is on, the gap between the substrate w and the heating tray 3 needs to be adjusted to be less than a set value to prevent arc discharge caused by the substrate w detaching from the heating tray 3 in the plasma gas atmosphere. In this embodiment 14, the set value of the gap between the substrate w and the heating tray 3 is m, 0 < m ≤ 5 mm. Therefore, by keeping the RF source 5 on while the gap between the substrate w and the heating tray 3 is less than the set value, the risk of arc discharge of the substrate w is reduced, ensuring the safety and stability of the thin film deposition process.

[0184] In this embodiment 14, when the number of thin film layers deposited on the surface of substrate w is small (e.g., less than 150 layers), the heating tray 3 can be driven to rotate synchronously with the substrate w to avoid the substrate w being lifted up and causing arc discharge. If the heating tray 3 has an uneven surface, the substrate w can be lifted up and driven to rotate, or the heating tray 3 can be driven to rotate, to address the impact of uneven temperature on the uniformity of the thin film deposited on the surface of substrate w.

[0185] Alternatively, when depositing a thin film of a single material, such as Figure 15B As shown,

[0186] Specifically, the thin film deposition method includes the following steps:

[0187] Step S11: Place the substrate in the processing chamber and evacuate the processing chamber.

[0188] Step S12: Introduce process gas, turn on the radio frequency source, and deposit a thin film of a certain thickness on the substrate.

[0189] Step S13: Continue to introduce process gas, keep the RF source on, and rotate the substrate or the heating tray or rotate the substrate and the heating tray synchronously at a set angle.

[0190] Step S14: Continue depositing a thin film on the substrate;

[0191] Step S15: Determine whether the thickness of the thin film deposited on the substrate meets the set requirements. If not, repeat steps S12-S14. If it meets the requirements, proceed to step S16.

[0192] Step S16: Remove the substrate from the processing chamber.

[0193] During the thin film growth process, the substrate w is rotated to ensure that the thin film deposited on the surface of the substrate w is more uniform.

[0194] Example 15

[0195] This embodiment 15 provides a thin film deposition method, which differs from embodiment 14 in that:

[0196] When the radio frequency source 5 is in the open state, a non-process gas is introduced into the gap between the substrate w and the heating tray 3 through the second through hole 302 on the heating tray 3 to reduce the risk of arc discharge when the substrate w is removed from the heating tray 3. In this embodiment 15, the non-process gas is an inert gas or nitrogen.

[0197] When the gap between the substrate w and the heating tray 3 is filled with non-process gas, the RF source 5 is kept on to reduce the risk of arc discharge on the substrate w and ensure the safety and stability of the thin film deposition process.

[0198] The other settings in this embodiment are the same as in embodiment fourteen, and will not be repeated here.

[0199] Example 16

[0200] This embodiment 16 provides a thin film deposition method, which differs from embodiment 14 in that:

[0201] With the RF source 5 in the on state, the RF power of the RF source 5 is reduced to be less than that of the RF source 5 during the thin film deposition process, so as to reduce the risk of arc discharge when the substrate w is removed from the heating tray 3, thereby ensuring the safety and stability of the thin film deposition process.

[0202] The other settings in this embodiment are the same as in embodiment fourteen, and will not be repeated here.

[0203] Example 17

[0204] This embodiment 17 provides a thin film deposition method, which differs from embodiment 14 in that:

[0205] Before the substrate w rotates, or the heating tray 3 rotates, or the substrate w rotates synchronously with the heating tray 3, the radio frequency source 5 is turned off, and the processing chamber 1 is purified.

[0206] Because impurity particles will exist inside the processing chamber 1 after a certain number of thin films are deposited on the substrate w, the dirtier the processing chamber 1 is, the more likely arc discharge will occur when the substrate w detaches from the heating tray 3 inside the processing chamber 1. Therefore, it is preferable to turn off the RF source 5 before the substrate w rotates, the heating tray 3 rotates, or the substrate w and the heating tray 3 rotate synchronously, and supply nitrogen gas to the processing chamber 1 through the gas supply component 2 to purify the processing chamber 1. After the purification process is completed, the RF source 5 is readjusted to the open state.

[0207] The other settings in this embodiment are the same as in embodiment fourteen, and will not be repeated here.

[0208] Example 18

[0209] Please see Figures 8A to 9 and Figure 16 This embodiment 18 provides a thin film deposition method, which is implemented based on the thin film deposition apparatus in embodiments 7 and 10 above.

[0210] Specifically, the thin film deposition method includes the following steps:

[0211] Step S21: Place the substrate w in the PECVD processing chamber 1 and evacuate the processing chamber 1 so that the substrate w to be deposited is in a vacuum environment.

[0212] Step S22: Process gas is introduced into the processing chamber 1 and the radio frequency source 5 is turned on to dissociate the process gas in the processing chamber 1 into plasma gas and deposit a certain number of thin films on the substrate w.

[0213] Step S23: Stop the flow of process gas into the processing chamber 1, and introduce inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1.

[0214] Step S24: Adjust the RF source 5 to the off state, so that the heating tray 3 drives the substrate w to rotate synchronously by a set angle;

[0215] Step S25: Process gas is introduced into the processing chamber 1 again, and the radio frequency source 5 is turned on. Then, a certain number of thin films are deposited on the substrate w.

[0216] Step S26: Stop the flow of process gas into the processing chamber 1, and introduce inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1.

[0217] Step S27: Determine whether the number of thin film layers deposited on the substrate w meets the set number of layers; if not, repeat steps S22-S26 above; if yes, proceed to step S28.

[0218] Step S28: Remove the substrate w from the processing chamber 1 to complete the thin film deposition process.

[0219] In this embodiment 18, the rotation axis AA' of the heating tray 3, which rotates synchronously with the substrate w, is perpendicular to and passes through the center O of the substrate w. The synchronous rotation of the heating tray 3 with the substrate w around the axis AA' passing through the center of the substrate w further includes: the heating tray 3 rotates a set angle around the rotation axis AA' in the forward direction, and then rotates in the reverse direction around the rotation axis AA'.

[0220] The thin film deposited on the substrate w includes alternating deposition of a first material and a second material.

[0221] The thin film deposition method further includes: after each material is deposited on the surface of the substrate w, the waste gas in the processing chamber 1 needs to be extracted before proceeding with subsequent process steps.

[0222] After thin film deposition, (number of substrate rotations + 1) * set angle of substrate w rotation per rotation = 360°. In this embodiment 18, as... Figures 8A to 8D As shown, after the thin film deposition is completed, the substrate w rotates 5 times, and the set angle for each rotation is 60 degrees; alternatively, the substrate w rotates 3 times, and the set angle for each rotation is 90 degrees; alternatively, the substrate w rotates 2 times, and the set angle for each rotation is 120 degrees; alternatively, the substrate w rotates 1 time, and the set angle for each rotation is 180 degrees.

[0223] Example 19

[0224] Please see Figure 10 and Figure 17 This embodiment 19 provides a thin film deposition method, which is implemented based on the thin film deposition apparatus in embodiments 8 and 11 above.

[0225] Specifically, the thin film deposition method includes the following steps:

[0226] Step S31: Place the substrate w in the PECVD processing chamber 1 and evacuate the processing chamber 1 so that the substrate w to be deposited is in a vacuum environment.

[0227] Step S32: Introduce process gas into the processing chamber 1 and turn on the radio frequency source 5 to dissociate the process gas inside the processing chamber 1 into plasma gas and deposit a certain number of thin films on the substrate w.

[0228] Step S33: Stop the flow of process gas into the processing chamber 1, and introduce inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0229] Step S34: Adjust the RF source 5 to the off state, lift the substrate w, drive the heating tray 3 to rotate by a set angle, and then place the substrate w back on the heating tray 3.

[0230] Step S35: Introduce process gas into the processing chamber 1 and turn on the radio frequency source 5. Then, deposit a certain number of thin films on the substrate w.

[0231] Step S36: Stop the flow of process gas into the processing chamber 1, and introduce inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1.

[0232] Step S37: Determine whether the number of thin film layers deposited on the substrate w meets the set number of layers; if not, repeat steps S32-S36 above; if yes, proceed to step S38.

[0233] Step S8: Remove the substrate w from the processing chamber 1 to complete the thin film deposition process.

[0234] In this embodiment 19, the rotation axis AA' of the heating tray 3 is perpendicular and passes through the center O of the substrate w. The rotation of the heating tray 3 around the axis AA' passing through the center of the substrate w further includes: the heating tray 3 rotates around the rotation axis AA' in the forward direction by a set angle, and then rotates around the rotation axis AA' in the reverse direction.

[0235] In this embodiment 19, the thin film deposited on the substrate w includes alternating deposition of a first material and a second material.

[0236] The thin film deposition method further includes: after each material is deposited on the surface of the substrate w, the waste gas in the processing chamber 1 needs to be extracted before proceeding with subsequent process steps.

[0237] Example 20

[0238] Please see Figure 11 and Figure 18 This embodiment 20 provides a thin film deposition method, which is implemented based on the thin film deposition apparatus in embodiment 9 above.

[0239] Specifically, the thin film deposition method includes the following steps:

[0240] Step S41: Place multiple substrates w into the processing chamber 1 in sequence to complete the thin film deposition process;

[0241] Step S42: Rotate the gas supply assembly 2 by a set angle;

[0242] Step S43: Clean the processing chamber 1 to ensure its cleanliness. After cleaning, repeat steps S41-S43.

[0243] In this embodiment 20, the thin film deposited on the substrate w includes alternating deposition of a first material and a second material. The thin film deposition process, in which multiple substrates w are sequentially placed into the processing chamber 1, includes: after each material is deposited on the surface of each substrate w, the waste gas in the processing chamber 1 needs to be removed before proceeding to subsequent process steps.

[0244] Example 21

[0245] Please see Figures 13A to 13C and Figure 19 This embodiment 21 provides a thin film deposition method, which is implemented based on the thin film deposition apparatus in embodiment 12 above.

[0246] like Figures 13A to 13C As shown, a first porous plate 21 is provided at the bottom of the gas supply assembly 2; a gas regulating unit 200 is provided inside the gas supply assembly 2, and a second porous plate 201 is provided at the bottom of the gas regulating unit 200, with the second porous plate 201 positioned opposite to the first porous plate 21 of the gas supply assembly 2. By adjusting the gap between the second porous plate 201 and the first porous plate 21, the airflow direction of the process gas inside the gas supply assembly 2 can be adjusted, allowing the process gas inside the gas supply assembly 2 to be fully mixed, thereby improving the defect of uneven film deposition on the substrate w caused by uneven distribution of plasma gas inside the processing chamber 1.

[0247] Specifically, such as Figures 13A to 13C As shown, adjusting the gap between the second porous plate 201 and the first porous plate 21 is achieved by adjusting the sidewall 202 of the gas regulating unit 200 to be stretched or compressed in the vertical direction. For details, please refer to the adjustment method of the sidewall 202 of the gas regulating unit 200 described in Embodiment 12 above; it will not be repeated here. The thin film deposition method provided in this Embodiment 21 includes the following steps:

[0248] Step S51: Place multiple substrates w into the processing chamber 1 in sequence to complete the thin film deposition process;

[0249] Step S52: Adjust the gap between the second perforated plate 201 and the first perforated plate 21 to adjust the airflow direction of the process gas inside the gas supply assembly 2.

[0250] Step S53: Clean the processing chamber 1 to ensure its cleanliness. After cleaning, repeat steps S51-S53.

[0251] Example 22

[0252] Please see Figures 14A to 14C and Figure 19 This embodiment 22 provides a thin film deposition method based on the thin film deposition apparatus described in embodiment 13. The difference compared to embodiment 21 is:

[0253] like Figures 14A to 14C As shown, a telescopic rod 203 is provided inside the gas regulating unit 200. The gap between the second perforated plate 201 and the first perforated plate 21 is adjusted by adjusting the telescopic rod 203 to stretch or compress in the vertical direction. For details, please refer to the adjustment method of the telescopic rod 203 of the gas regulating unit 200 described in Embodiment 13 above, which will not be repeated here.

[0254] The other settings in this embodiment are the same as in embodiment twenty-one, and will not be repeated here.

[0255] Example 23

[0256] Please see Figures 20A to 20E This embodiment 23 provides a thin film deposition apparatus, including: a substrate loading port 002 for placing a substrate w; a buffer device 003; a front-end robot 001 for transferring the substrate w between the substrate loading port 002 and the buffer device 003; the thin film deposition apparatus of embodiments 1-13 above, for performing thin film deposition on the substrate w; and a process robot 004 for transferring the substrate w between the buffer device 003 and the processing chamber 1 of the thin film deposition apparatus.

[0257] Specifically, the front-end robot 001 removes the substrate w to be deposited from the substrate loading port 002 and places it on the buffer device 003; the process robot 004 removes the substrate w from the buffer device 003 and places it in the processing chamber 1 of the thin film deposition apparatus to perform thin film deposition on the surface of the substrate w; after the thin film deposition is completed, the process robot 004 removes the substrate w from the processing chamber 1 and places it on the buffer device 003; the front-end robot 001 removes the substrate w from the buffer device 003 and puts it back into the substrate loading port 002, completing the process operation of the thin film deposition apparatus.

[0258] In this embodiment 23, as Figures 20A to 20C As shown, the thin film deposition apparatus has multiple processing chambers 1, which are symmetrically arranged on both sides of the process robot 004.

[0259] Meanwhile, there can be one or more process robot arms 004. When there are multiple process robot arms 004, such as... Figure 20A As shown, there are multiple corresponding buffer devices 003. When there is only one process robot 004, as... Figure 20B and Figure 20C As shown, the process robot 004 is equipped with a non-contact magnetic levitation track below it to ensure that the process robot 004 slides without oil or friction. Each processing chamber 1 can also be equipped with multiple heating trays 3 for simultaneously depositing thin films on multiple substrates w to improve the process efficiency of thin film deposition.

[0260] In this embodiment 23, as Figure 20A , Figure 20C As shown, the multiple heating trays 3 inside each processing chamber 1 can be arranged in a matrix structure. Alternatively, in other embodiments, such as Figure 20B , Figure 20D and Figure 20E As shown, multiple heating trays 3 inside each processing chamber 1 are arranged in a triangular structure.

[0261] Optionally, multiple substrates w can be placed inside the cache device 003. The centers of the multiple substrates w are on the same circle. The multiple substrates w can be rotated along a rotation axis perpendicular to the center of the circle to change the position of the multiple substrates w inside the cache device 003.

[0262] like Figure 20D and Figure 20E As shown, the buffer device 003 can hold three substrates w, and the three substrates w inside the buffer device 003 are arranged in a triangular structure, and the three substrates w can rotate. The structure of the process robot 004 is compatible with the triangular structure formed by the three substrates w inside the buffer device 003 and the triangular structure formed by the three heating trays 3 in the processing chamber 1. The process robot 004 includes three substrate transfer arms for picking up and placing substrates, and the position and number of the three substrate transfer arms correspond to the multiple heating trays 3. The process robot 004 simultaneously picks up three substrates w from the buffer device 003 and places them on the three heating trays 3 in the processing chamber 1 to improve the process efficiency of thin film deposition.

[0263] Furthermore, such as Figure 20E As shown, there is one process robot 004. The process robot 004 is a telescopic arm. At the same time, the process robot 004 can rotate and swing left and right to pick up and place the substrate w in different positions of the processing chamber 1.

[0264] Example 24

[0265] This embodiment 24 provides a thin film deposition apparatus, which differs from embodiment 23 in that:

[0266] like Figures 20F to 20I as well as Figure 20K As shown, multiple processing chambers 1 are arranged sequentially on the outer periphery of the process robot 004.

[0267] Among them, such as Figure 20G As shown, there are five processing chambers 1, arranged sequentially around the periphery of the process robot 004. Each processing chamber 1 contains three heating trays 3, which are used to simultaneously perform thin film deposition on three substrates w, and the three heating trays 3 are arranged in a triangular structure.

[0268] In a preferred embodiment, the buffer device 003 has two storage platforms, each capable of holding three substrates w. One storage platform holds the substrates w to be deposited, and the deposited substrates w are conveyed out through the other storage platform. This dual-layer structure reduces the waiting time for the substrates w, thus increasing the throughput of the equipment. The two storage platforms can be isolated, with two rotating units driving their respective platforms. Alternatively, the two storage platforms can be connected, placed on the same rotating unit, and driven synchronously by a single rotating shaft.

[0269] Optionally, the thin film deposition equipment may be equipped with multiple buffer devices 003, depending on the overall operating speed of the equipment. These multiple buffer devices 003 may or may not be interconnected.

[0270] Preferably, such as Figure 20J As shown, the thin film deposition equipment includes two buffer units 003, namely buffer unit 0031 and buffer unit 0032. Each buffer unit 003 has three storage platforms 0033 in the vertical direction, and each storage platform 0033 can be used to hold three substrates w. Buffer unit 0031 is driven by rotating unit 7, and buffer unit 0032 is driven by rotating unit 8. The three storage platforms 0033 in each buffer unit 0031 and 0032 are driven to rotate synchronously by one rotating unit. The two buffer units 0031 and 0032 are arranged in the vertical direction, and the vertical distance between the two buffer units 0031 and 0032 is within a preset range that the process robot 004 can pick up and place substrates w. Optionally, one of the three storage platforms 0033 can be left empty, and the other two storage platforms are used to pick up and place substrates w. The number of process robots 004 is not limited to one, depending on the process requirements.

[0271] Furthermore, one side of one of the buffer devices 0031 is open, and the front-end robot 001 takes the substrate w to be deposited from the substrate loading port 002 and places it on the buffer device 0031; the other buffer device 0032 is open, and the process robot 004 takes the deposited substrate w from the processing chamber 1 and places it on the buffer device 0032. Conversely, the other side of the buffer device 0032 is open to place the substrate w to be deposited, and the other side of the buffer device 0031 is open to place the deposited substrate w. That is, the opening methods of the buffer devices 0031 and 0032 are alternately arranged to improve production efficiency. Other settings in this embodiment are the same as in embodiment twenty-three, and will not be repeated here.

[0272] Example 25

[0273] Please see Figure 21 This embodiment 25 provides a thin film deposition apparatus, which includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating a substrate w; a radio frequency source 5 for providing radio frequency power to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the plasma gas performs thin film deposition on the substrate w; and a lifting mechanism 402 connected to the gas supply assembly 2 for driving the gas supply assembly 2 to move up and down.

[0274] The lifting mechanism 402 can be a cylinder 402. The cylinder 402 drives the gas supply component 2 to rise or fall, thereby adjusting the distance between the gas supply component 2 and the substrate w. Adjusting the distance between the gas supply component 2 and the substrate w within a preset range further improves the uniformity of thin film deposition in the PECVD layer stack structure.

[0275] This embodiment twenty-five can be combined with any of the embodiments one to thirteen above to adjust the spacing between the gas supply component 2 and the substrate w.

[0276] Example 26

[0277] Please see Figure 22-23This embodiment 26 provides a thin film deposition apparatus, which includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating a substrate w; a radio frequency source 5 for providing radio frequency power to form a radio frequency electric field inside the processing chamber 1, exciting the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas performs thin film deposition on the substrate w; and a rotating mechanism 403 connected to the heating tray 3 for driving the heating tray 3 to rotate about an axis AA' passing through the center of the substrate w.

[0278] The heating tray 3 can also be raised and lowered. A lifting mechanism 402 is connected to the heating tray 3 and is used to drive the heating tray 3 to move up and down. A support member is used to support the substrate w. The support member can be a support ring 404 and / or a pin 401.

[0279] like Figure 23 As shown, when the heating tray 3 needs to be rotated, the lifting mechanism 402 drives the heating tray 3 to move downwards in the vertical direction, so that the heating tray 3 separates from the substrate w, and the support supports the substrate w. Then the rotation mechanism 403 drives the lifting mechanism 420 to rotate the heating tray 3 by a set angle; after the heating tray 3 has rotated by the set angle, it stops rotating, and the lifting mechanism 402 drives the heating tray 3 to rise upwards in the vertical direction, placing the substrate w on the heating tray 3 for thin film deposition.

[0280] Furthermore, when it is necessary to adjust the spacing between the gas supply component 2 and the substrate w, the heating tray 3 moves up or down together with the substrate w, thereby ensuring that the spacing value is within a preset range, which further improves the uniformity of the PECVD layer stack structure thin film deposition.

[0281] Example 27

[0282] Please see Figure 24-25 This embodiment 27 provides a thin film deposition apparatus, which differs from embodiment 26 in that:

[0283] The thin film deposition apparatus further includes a support member and a second lifting mechanism 405. The support member is used to support the substrate w, and the support member can be a support ring 404 disposed at the bottom edge of the substrate w. The support ring 404 adopts... Figure 5 The circular ring shown has a notch a.

[0284] The first lifting mechanism 402 is connected to the rotating mechanism 403 and is used to drive the rotating mechanism 403 and the heating tray 3 to move up and down. The rotating mechanism 403 is located at the bottom of the heating tray 3 and is used to drive the heating tray 3 to rotate about the axis AA' passing through the center of the substrate w, thereby driving the substrate w to rotate synchronously.

[0285] The second lifting mechanism 405, connected to the support ring 404, is used to drive the support ring 404 to rise or fall vertically, so as to lift the substrate w away from the heating tray 3 or place the substrate w on the heating tray 3. In addition, the second lifting mechanism 405 is also connected to the first lifting mechanism 402. The second lifting mechanism 405 drives the first lifting mechanism 402 and the support ring 404 to move up and down together, thereby driving the substrate w to move up and down to adjust the distance between the gas supply assembly 2 and the substrate w.

[0286] In this embodiment, as Figure 25 As shown, when the heating tray 3 needs to be rotated, the second lifting mechanism 405 drives the support ring 404 to rise vertically, lifting the substrate w and detaching it from the heating tray 3. Then, the rotation mechanism 403 drives the first lifting mechanism 402 and the heating tray 3 to rotate by a set angle. After the heating tray 3 has rotated the set angle, it stops rotating. The second lifting mechanism 405 drives the support ring 404 to move vertically downward, placing the substrate w on the heating tray 3 for thin film deposition. Optionally, the first lifting mechanism 402 drives the heating tray 3 to descend, causing the substrate w to detach from the heating tray 3.

[0287] The support member can also be a pin that moves vertically. The heating tray 3 has a first through hole, and the pin is placed inside the first through hole. The second lifting mechanism 405 drives the pin to rise or fall vertically.

[0288] Example 28

[0289] Please see Figure 26-27 This embodiment 28 provides a thin film deposition apparatus, which includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating a substrate w; a radio frequency source 5 for providing radio frequency power to form a radio frequency electric field inside the processing chamber 1, exciting the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas performs thin film deposition on the substrate w; and a lifting mechanism 402 connected to the heating tray 3 for driving the heating tray 3 to move up and down.

[0290] The controller is connected to the gas supply assembly 2, the radio frequency source 5, the heating tray 3, the rotation mechanism 403, and the lifting mechanism 402, respectively, and is used to control the operation of the gas supply assembly 2, the radio frequency source 5, the heating tray 3, the rotation mechanism 403, and the lifting mechanism 402. The controller is also configured to build a program menu, which includes keeping the radio frequency source 5 in the on state while the substrate w rotates.

[0291] The thin film deposition apparatus further includes: a support member for supporting a substrate w; and a rotation mechanism 403 connected to the support member for driving the support member and the substrate w to rotate.

[0292] Among them, such as Figure 27 As shown, the support member is a support ring 404, which is disposed at the bottom edge of the substrate w; the rotating mechanism 403 is connected to the support ring 404 and is used to drive the support ring 404 to rotate about the center line AA' of the substrate w as the rotation axis.

[0293] When the substrate w needs to be rotated, the lifting mechanism 402 drives the heating tray 3 to descend vertically, separating the heating tray 3 from the support ring 404. The support ring 404 supports the substrate w, and the rotation mechanism 403 drives the support ring 404 to rotate. The support ring 404 lifts the substrate w to adjust the rotation angle of the substrate w, so that the substrate w can rotate around the rotation axis AA', which compensates for the unevenness of the film thickness deposited on the substrate w and realizes the uniformity and stability of the film deposition of the PECVD layer stack structure.

[0294] Example 29

[0295] Please see Figures 28-29 This embodiment 29 provides a thin film deposition apparatus, which differs from embodiment 28 in that:

[0296] The support component is a ejector pin 401, and the heating tray 3 has a first through hole 301, with the ejector pin 401 positioned within the first through hole 301. Figure 3A and Figure 3B As shown, the cross-section of the first through-hole 301 in the horizontal plane is arc-shaped or circular, and the center M of the arc or circle is on the same vertical line as the center O of the substrate w. When it is necessary to rotate the substrate w, the lifting mechanism 402 drives the heating tray 3 to descend vertically, separating the heating tray 3 from the substrate w. The ejector pin 401 lifts the substrate w and supports the substrate w. The rotation mechanism 403 drives the ejector pin 401 to move along an arc-shaped trajectory in the first through-hole 301, causing the substrate w to rotate by a set angle. After the substrate w has rotated by the set angle, the substrate w stops rotating, and the lifting mechanism 402 drives the heating tray 3 to rise vertically, placing the substrate w on the heating tray 3 for subsequent thin film deposition.

[0297] Example 30

[0298] Please see Figures 30-31 This embodiment 30 provides a thin film deposition apparatus, which differs from embodiment 28 in that:

[0299] The support includes a ejector pin 401 and a support ring 404. The thin film deposition apparatus includes a first lifting mechanism 402 and a second lifting mechanism 405. The first lifting mechanism 402 is connected to the heating tray 3 and is used to drive the heating tray 3 to move up and down. The second lifting mechanism 405 is connected to the ejector pin 401 and is used to drive the ejector pin 401 to rise or fall vertically, so that a robot can remove the substrate w from the heating tray 3 or place the substrate w on the heating tray 3.

[0300] Example 31

[0301] Please see Figures 32-33 This embodiment 31 provides a thin film deposition apparatus, which differs from embodiment 30 in that:

[0302] The thin film deposition apparatus also includes a third lifting mechanism 406, which is connected to the support ring 404.

[0303] In this embodiment, the second lifting mechanism 405 drives the ejector pin 401 to rise or fall vertically, for the robotic arm to remove the substrate w from the heating tray 3 or place the substrate w on the heating tray 3. The first lifting mechanism 402 drives the heating tray 3 to move up and down, and the third lifting mechanism 406 drives the support ring 404 and the substrate w to move up and down. The heating tray 3 and the substrate w move synchronously under the drive of the first lifting mechanism 402 and the third lifting mechanism 406 respectively to adjust the distance between the gas supply component 2 and the substrate w, so that the distance value is within a preset range, further improving the uniformity of the PECVD layer stack structure thin film deposition. Optionally, the third lifting mechanism 406 is connected to the first lifting mechanism 402 and the support ring 404 respectively, and the third lifting mechanism 406 drives the first lifting mechanism 402 and the support ring 404 to move up and down simultaneously in the vertical direction.

[0304] When it is necessary to rotate the substrate w, the third lifting mechanism 406 drives the support ring 404 to rise in the vertical direction, the support ring 404 separates from the heating tray 3, the support ring 404 supports the substrate w, the rotating mechanism 403 drives the support ring 404 to rotate, and the support ring 404 lifts the substrate w to adjust the rotation angle of the substrate w.

[0305] Example 32

[0306] Please see Figures 35-36 This embodiment 32 provides a thin film deposition apparatus. Compared with embodiment 28, the difference is that the thin film deposition apparatus further includes a pin 401 and a second lifting mechanism 405, and the lifting mechanism 402 is the first lifting mechanism 402.

[0307] The first lifting mechanism 402 drives the heating tray 3 to move, and the second lifting mechanism 405 is connected to the support ring 404 to drive the support ring 404 to rise or fall vertically. The heating tray 3 has a first through hole 301, and a ejector pin 401 is disposed within the first through hole 301. The lower end of the ejector pin 401 abuts against the base 6, which is connected to the bottom of the processing chamber 1. The height of the base 6 is preset according to the height at which the substrate w is conveyed into the processing chamber 1. When the ejector pin 401 abuts against the base 6, the upper end of the ejector pin 401 is higher than the support ring 404 and the heating tray 3, and the upper end of the ejector pin 401 is used to receive the substrate w.

[0308] The heating tray 3 and the substrate w move synchronously under the drive of the first lifting mechanism 402 and the second lifting mechanism 405, respectively, to adjust the distance between the gas supply assembly 2 and the substrate w. In one embodiment, the heating tray 3 has a groove corresponding to the position of the ejector pin 401, and the top of the ejector pin 401 has a protrusion. When the heating tray 3 moves upward, the protrusion of the ejector pin 401 is received in the groove. The heating tray 3 continues to move upward, taking the ejector pin 401 with it. After the ejector pin 401 moves upward, it separates from the base 6 and is in a suspended state.

[0309] When it is necessary to rotate the substrate w, the second lifting mechanism 405 drives the support ring 404 to rise in the vertical direction, the support ring 404 separates from the heating tray 3, the support ring 404 supports the substrate w, and the rotation mechanism 403 drives the support ring 404 to rotate to adjust the rotation set angle of the substrate w.

[0310] Example 33

[0311] Please see Figure 37 This embodiment 33 provides a thin film deposition apparatus, which includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating a substrate w; a radio frequency source 5 for providing radio frequency power to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the plasma gas performs thin film deposition on the substrate w; and a ejector pin 401 disposed in the heating tray 3, one end of the ejector pin 401 being disposed at the bottom of the processing chamber 1, and the other end of the ejector pin 401 being used to receive the substrate w.

[0312] In this embodiment, each processing chamber 1 is equipped with three heating trays 3 for simultaneously depositing thin films on three substrates w. The thin film deposition apparatus includes three sets of ejector pins. Each set of ejector pins includes three ejector pins 401, and each set of three ejector pins 401 has the same height and is used to receive one substrate w. Each set of ejector pins has a different height.

[0313] Preferably, the heights of the three sets of ejector pins are stepped, and the receiving substrate w is correspondingly also configured in a stepped shape. The three heating trays 3 are arranged in a triangular structure. The structure of the process robot 004 matches the triangular structure formed by the three heating trays 3 within the processing chamber 1. The process robot 004 places the three substrates w sequentially from highest to lowest height according to the three sets of ejector pins. Specifically, as shown... Figure 37 First, substrate w1 is aligned with the heating tray 3 corresponding to ejector pin 4011. After alignment, substrate w1 is placed on heating tray 3. Then, substrate w2 is aligned with the heating tray 3 corresponding to ejector pin 4012 and placed on heating tray 3. Similarly, substrate w3 is first aligned with the heating tray 3 corresponding to ejector pin 4013 before being placed on heating tray 3. This arrangement improves the alignment accuracy of the three substrates w with their respective heating trays 3. In addition, ejector pin 401 can achieve alignment without lifting, simplifying the structure of the thin film deposition apparatus.

[0314] Example 34

[0315] See Figure 38 , Figure 39 As shown, this embodiment 34 provides a thin film deposition apparatus. The difference compared to embodiment 1 is:

[0316] like Figure 38 As shown, the thin film deposition apparatus also includes a support mechanism for supporting the substrate w, which includes a push pin 501 and a support ring 504. A through hole 301 is formed on the heating tray 3, and the push pin 501 is located within the through hole 301. A first lifting mechanism 502 is connected to the push pin 501, driving the push pin 501 to rise or fall vertically, for use by a robotic arm to remove the substrate w from the heating tray 3 or place the substrate w on the heating tray 3. The support ring 504 is disposed below the edge of the substrate w to support the substrate w. The support mechanism also includes a support shaft 505 disposed below the support ring 504, and the support shaft 505 is not fixedly connected to the support ring 504. The lifting mechanism includes a first lifting mechanism 502 and a second lifting mechanism. In one specific embodiment, the second lifting mechanism is connected to the support shaft 505, for driving the support shaft 504 to rise until it contacts the support ring 504, lifting the substrate w to separate it from the heating tray 3 or lowering it to place the substrate w on the heating tray 3. In another specific embodiment, the support shaft 505 is fixed, and the heating tray 3 is driven to rise and fall by the first lifting mechanism 502 to realize the support and separation of the support shaft 505 and the support ring 504.

[0317] In this embodiment 34, the rotating mechanism 503 is disposed at the bottom of the first lifting mechanism 502, and is used to drive the first lifting mechanism 502 to rotate about the center line AA' of the substrate w as the rotation axis, so as to drive the heating tray 3 to rotate. The rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0318] like Figure 39 As shown Figure 38 A partial enlarged view of area A shows that the heating tray 3 is configured with a substrate support portion 148 and an edge portion 147, both featuring a central protrusion. The diameter of the substrate support portion 148 is smaller than the diameter of the substrate w. The height difference between the substrate support portion 148 and the edge portion 147 is 0.3-0.7 mm. The thickness of the support ring 504 is the same as the height difference between the substrate support portion 148 and the edge portion 147. During the thin film deposition process, the support ring 504 separates from the support shaft 505 and is supported by the edge portion 147 of the heating tray 3. At this time, the upper surface of the support ring 504 is in contact with the substrate w, and the lower surface is in contact with the heating tray 3, which allows for better heat conduction to the substrate w and prevents insufficient edge temperature. The inner diameter of the support ring 504 is smaller than the diameter of the substrate support portion 148. When the support ring 504 is placed on the edge portion 147, a gap is left between the support ring 504 and the substrate support portion 148 to prevent excessive particles on the substrate w due to friction between the support ring 504 and the heating tray 3. The upper surface of the support ring 504 is provided with a first step 5041 and a second step 5042. The second step 5042 is higher than the first step 5041. The first step 5041 is flush with the surface of the substrate support portion 148. Placing the substrate w on the first step 5041 of the support ring 504 can prevent it from shaking. The first step 5041 and the second step 5042 are connected by a ramp. When the substrate w is placed on the heating tray 3, the ramp of the support ring 504 can play a guiding role.

[0319] refer to Figures 40A-40D The present invention also discloses a process for performing a thin film deposition process using the thin film deposition apparatus provided in this embodiment. The specific process includes:

[0320] S1: The robot arm places the substrate w into the processing chamber. The first lifting mechanism 502 drives the ejector pin 501 to rise vertically and extend out of the through hole 301 to carry the substrate w placed by the robot arm. Then the first lifting mechanism 502 drives the ejector pin 501 to descend vertically and retract into the through hole 301, so that the substrate w is placed on the heating tray 3.

[0321] S2: Deposit a thin film of the first thickness on the substrate w. Figure 38 The image shows the state of the first thin film deposition on substrate w using this device.

[0322] S3: The rotating mechanism 503 drives the first lifting mechanism 502 to rotate, simultaneously causing the heating tray 3 and the substrate w to rotate from the first position (initial position) by a first angle to the second position, such as... Figure 40A The position of the ejector pin 501 shown is relative to Figure 38 A change occurs. In this step, the support ring 504 is rotated along with the heating tray 3.

[0323] S4: The first lifting mechanism 502 drives the heating tray 3 to descend, causing the substrate w and the support ring 504 to descend together. After the support ring 504 contacts the support shaft 505, the support ring 504, supported by the support shaft 505, stops descending along with the substrate w. At this point, the first lifting mechanism 502 continues to descend until the heating tray 3 separates from the substrate w. Alternatively, in this step, the first lifting mechanism 502 may not operate, and the second lifting mechanism may drive the support shaft 505 to rise until it contacts the support ring 504, after which it continues to rise to separate the substrate w from the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism may work together. The first lifting mechanism 502 drives the heating tray 3 to descend, and the second lifting mechanism drives the support shaft 505 to rise, causing the support ring 504 and the substrate w to rise to separate the support ring 504 from the heating tray 3.

[0324] S5: The rotating mechanism 503 drives the first lifting mechanism 502 to rotate again, simultaneously rotating the heating tray 3 by a second angle to the third position. After this step is completed, the relative positions of the substrate w and the heating tray 3 change. Preferably, in this step, the heating tray 3 can either directly return to the initial position or continue rotating to the initial position. Figure 40C The position of the ejector pin 501 shown has now returned to normal. Figure 38 The initial position is shown. At this time, the relative position of the substrate w and the heating tray 3 changes. In this step, the support ring 504 does not rotate, and the rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0325] S6: The first lifting mechanism 502 drives the heating tray 3 to rise, causing the substrate w and the support ring 504 to rise together until the heating tray 3 contacts the substrate w. Alternatively, in this step, the first lifting mechanism 502 may not operate, and the second lifting mechanism may drive the support shaft 505 to descend until the substrate w contacts the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism may operate simultaneously; the first lifting mechanism 502 drives the heating tray 3 to rise, and the second lifting mechanism drives the support shaft 505 to descend, causing the support ring 504 and the substrate w to contact the heating tray 3.

[0326] S7: Deposit a thin film of a second thickness on the substrate w.

[0327] S8: Repeat S3-S7 until n thin film depositions are completed.

[0328] S9: When the robot arm removes the substrate w from the processing chamber, the first lifting mechanism 502 drives the ejector pin 501 to rise vertically and extend out of the through hole of the heating tray 3, lifting the substrate w from the heating tray 3 so that the robot arm can remove the substrate w. Then the first lifting mechanism 502 drives the ejector pin 501 to descend vertically and retract the ejector pin 501 into the through hole.

[0329] When the rotating mechanism 503 drives the heating tray 3 to rotate, it stops supplying process gas into the processing chamber and instead introduces inert gas or nitrogen into the processing chamber to maintain the pressure inside the processing chamber and keep the RF source in the on state. Because some impurity particles are suspended inside the processing chamber after a certain number of thin films are deposited on the substrate w, keeping the RF source in the on state at this time fills the processing chamber with an RF electric field. The impurity particles become charged under the action of the RF electric field inside the processing chamber, and the charged impurity particles remain suspended and will not fall onto the surface of the substrate w, effectively preventing impurity particles from falling onto the thin film deposited on the substrate w and avoiding contamination of the thin film deposited on the substrate w.

[0330] The other settings in this embodiment are the same as in Embodiment 1, and will not be repeated here.

[0331] Example 35

[0332] See Figure 41 , Figure 42 As shown, this embodiment 35 provides a thin film deposition apparatus. The difference compared to embodiment 34 is:

[0333] like Figure 41 As shown, the support shaft 505 of the thin film deposition apparatus is fixedly connected to the support ring 504. In one specific embodiment, the second lifting mechanism is connected to the support shaft 505 and is driven to lift by the support shaft 505. In another specific embodiment, the support shaft 505 is fixed.

[0334] like Figure 42 As shown Figure 41A partial enlarged view of region B shows that the heating tray 3 is configured with a substrate support portion 148 and an edge portion 147 with a central protrusion. The diameter of the substrate support portion 148 is smaller than the diameter of the substrate w. The height difference between the substrate support portion 148 and the edge portion 147 is 1.5-2.9 mm, and the thickness of the support ring 504 is 0.3-0.7 mm. When the substrate w is placed on the heating tray 3, the support ring 504 can move up and down within the space between the substrate w and the edge portion 147. In the thin film deposition process, the second lifting mechanism drives the support shaft 505 to rise, moving the support ring 504 to the same height as the substrate support portion 148, or the support shaft 505 remains stationary, and the first lifting mechanism 502 drives the heating tray 3 to descend to the same height as the support ring 504. At this time, the support ring 504 and the heating tray 3 are not in contact, and the support ring 504 and the heating tray 3 support the substrate w.

[0335] refer to Figures 43A-43D The present invention also discloses a process for performing a thin film deposition process using the thin film deposition apparatus provided in this embodiment. The specific process includes:

[0336] S1: The robot arm places the substrate w into the processing chamber. The first lifting mechanism 502 drives the ejector pin 501 to rise vertically and extend out of the through hole 301 to carry the substrate w placed by the robot arm. Then the first lifting mechanism 502 drives the ejector pin 501 to descend vertically and retract into the through hole 301, so that the substrate w is placed on the heating tray 3.

[0337] S2: Deposit a thin film of the first thickness on the substrate w. Figure 41 The image shows the state of the first thin film deposition on substrate w using this device.

[0338] S3: The first lifting mechanism 502 drives the heating tray 3 to rise until the support ring 504 is no longer in contact with the substrate w and the heating tray 3; or the second lifting mechanism drives the support shaft 505 to descend, and also lowers the support ring 504 until it is no longer in contact with the substrate w and the heating tray 3; or the first lifting mechanism 502 and the second lifting mechanism work together, with the first lifting mechanism 502 driving the heating tray 3 to rise, and the second lifting mechanism driving the support shaft 505 and lowering the support ring 504 until the support ring 504 is no longer in contact with the substrate w and the heating tray 3. The rotating mechanism 503 drives the first lifting mechanism 502 to rotate, and simultaneously rotates the heating tray 3 and the substrate w from the first position (initial position) by a set angle to the second position, such as... Figure 43A The position of the ejector pin 501 shown is relative to Figure 41 Changes occur. In this step, the support ring 504 does not rotate, and the rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0339] S4: The first lifting mechanism 502 drives the heating tray 3 to descend, bringing the substrate w down with it. Once the substrate w contacts the support ring 504, it stops descending, supported by the support ring 504. At this point, the first lifting mechanism 502 continues descending until the heating tray 3 separates from the substrate w. Alternatively, in this step, the first lifting mechanism 502 may not operate, and the second lifting mechanism may drive the support shaft 505 to rise, bringing the support ring 504 up until it contacts the substrate w, at which point it continues rising to separate the substrate w from the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism may work together. The first lifting mechanism 502 drives the heating tray 3 to descend, while the second lifting mechanism drives the support shaft 505 and the support ring 504 to rise, separating the support ring 504 from the heating tray 3.

[0340] S5: The rotating mechanism 503 drives the first lifting mechanism 502 to rotate again, simultaneously rotating the heating tray 3 by a second angle to the third position. After this step is completed, the relative positions of the substrate w and the heating tray 3 change. Preferably, in this step, the heating tray 3 can either directly return to the initial position or continue rotating to the initial position. Figure 43C The position of the ejector pin 501 shown has now returned to normal. Figure 41 The initial position is shown. At this time, the relative position between the substrate w and the heating tray 3 changes. In this step, the rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0341] S6: The first lifting mechanism 502 drives the heating tray 3 to rise until it contacts the substrate w. Alternatively, in this step, the first lifting mechanism 502 may not operate, and the second lifting mechanism may drive the support shaft 505 to descend until the substrate w contacts the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism may operate simultaneously: the first lifting mechanism 502 drives the heating tray 3 to rise, and the second lifting mechanism drives the support shaft 505, causing the support ring 504 and the substrate w to descend until the substrate w contacts the heating tray 3.

[0342] S7: Deposit a thin film of a second thickness on the substrate w.

[0343] S8: Repeat S3-S7 until n thin film depositions are completed.

[0344] S9: When the robot arm removes the substrate w from the processing chamber, the first lifting mechanism 502 drives the ejector pin 501 to rise vertically and extend out of the through hole of the heating tray 3, lifting the substrate w from the heating tray 3 so that the robot arm can remove the substrate w. Then the first lifting mechanism 502 drives the ejector pin 501 to descend vertically and retract the ejector pin 501 into the through hole.

[0345] It should be noted that, provided the technical solution is logically accurate, the above-mentioned multiple embodiments can be combined to form new solutions; that is, certain features, structures, or characteristics of one or more embodiments of this application can be appropriately combined. Further details of the new solutions will not be elaborated here.

[0346] Through the above-described embodiments and related drawings, this invention has specifically and thoroughly disclosed the relevant technology, enabling those skilled in the art to implement it. The above-described embodiments are merely illustrative of the invention and not intended to limit it; the scope of the invention should be defined by the claims. Any changes in the number of elements or substitutions of equivalent elements described herein should still fall within the scope of this invention.

[0347] Furthermore, this invention uses specific terms to describe embodiments of the invention. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the invention. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment.

[0348] Similarly, it should be noted that, in order to simplify the description of this invention and thus aid in the understanding of one or more embodiments, the foregoing description of the embodiments of this invention sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the invention requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiment disclosed above.

Claims

1. A thin film deposition apparatus, characterized by, The application relates to a thin film deposition device, comprising: a processing chamber for thin film deposition; a heating tray for carrying and heating a substrate, wherein the heating tray is provided with a substrate supporting part with a middle protrusion and an edge part for placing a supporting ring; a supporting mechanism comprising a supporting ring arranged around the substrate supporting part and a supporting shaft for supporting the supporting ring; a lifting mechanism for driving the supporting shaft to lift and / or driving the heating tray to lift; a rotating mechanism for driving the heating tray to rotate; the thin film deposition device is configured to: when a thin film deposition is completed, the rotating mechanism drives the heating tray to rotate together with the substrate from a first position to a second position; after the rotation is completed, the heating tray is separated from the substrate, the substrate is supported by the supporting ring; the rotating mechanism drives the heating tray to rotate to a third position, while the supporting ring and the substrate remain in the second position; after the heating tray contacts the substrate, the next thin film deposition is carried out. The third position is the same as the first position. The inner diameter of the supporting ring is larger than the outer diameter of the substrate supporting part. The supporting shaft and the supporting ring are non-fixedly connected. The surface height difference between the substrate supporting part and the edge part is the same as the thickness of the supporting ring. The thickness of the supporting ring is 0.3-0.7 mm. The supporting shaft and the supporting ring are fixedly connected.

2. The thin film deposition apparatus of claim 1, wherein The surface height difference between the substrate supporting part and the edge part is 1.5-2.9 mm.

3. The thin film deposition apparatus of claim 1, wherein The thickness of the supporting ring is 0.3-0.7 mm.

4. The thin film deposition apparatus of claim 1, wherein When the rotating mechanism drives the heating tray to rotate together with the substrate, the supporting ring is kept in a non-contact state with the heating tray and the substrate.

5. The thin film deposition apparatus of claim 4, wherein The application relates to a thin film deposition device, comprising: a processing chamber for thin film deposition; a heating tray for carrying and heating a substrate, wherein the heating tray is provided with a substrate supporting part with a middle protrusion and an edge part for placing a supporting ring; a supporting mechanism comprising a supporting ring arranged around the substrate supporting part and a supporting shaft for supporting the supporting ring; a lifting mechanism for driving the supporting shaft to lift and / or driving the heating tray to lift; a rotating mechanism for driving the heating tray to rotate; the thin film deposition device is configured to: when a thin film deposition is completed, the rotating mechanism drives the heating tray to rotate together with the substrate from a first position to a second position; after the rotation is completed, the heating tray is separated from the substrate, the substrate is supported by the supporting ring; the rotating mechanism drives the heating tray to rotate to a third position, while the supporting ring and the substrate remain in the second position; after the heating tray contacts the substrate, the next thin film deposition is carried out.

6. The thin film deposition apparatus of claim 5, wherein The third position is the same as the first position.

7. The thin film deposition apparatus of claim 1, wherein The heating tray is separated from the substrate by driving the heating tray to descend by the lifting mechanism.

8. The thin film deposition apparatus of claim 7, wherein The heating tray is separated from the substrate by driving the heating tray to descend and driving the supporting shaft to ascend by the lifting mechanism.

9. The thin film deposition apparatus of claim 8, wherein The heating tray is separated from the substrate by driving the supporting shaft to ascend by the lifting mechanism.

10. The thin film deposition apparatus of claim 7, wherein The supporting shaft and the supporting ring are non-fixedly connected, and the supporting and separation between the supporting shaft and the supporting ring are realized through relative movement.

11. A thin film deposition method for use in the thin film deposition apparatus according to claim 1, characterized by, When the substrate is deposited with a thin film, the upper surface of the supporting ring is attached to the substrate, and the lower surface of the supporting ring is attached to the heating tray. When the heating tray rotates together with the substrate, the supporting ring is in a separated state with the supporting shaft, and the supporting ring is rotated together with the heating tray. The supporting shaft and the supporting ring are fixedly connected, and the supporting ring is driven to ascend and descend by the supporting shaft. After the supporting shaft drives the supporting ring to descend to a state of not contacting the substrate and the heating tray, the heating tray rotates together with the substrate, and the supporting ring does not rotate. ​ 12. The thin film deposition method of claim 11, wherein, ​ 13. The thin film deposition method of claim 11, wherein, ​ 14. The thin film deposition method of claim 11, wherein, ​ 15. The thin film deposition method of claim 11, wherein, ​ 16. The thin film deposition method of claim 11, wherein, ​ 17. The thin film deposition method of claim 16, wherein, ​ 18. The thin film deposition method of claim 16, wherein, ​ 19. The thin film deposition method of claim 11, wherein, ​ 20. The thin film deposition method of claim 19, wherein, ​

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