Reliability test system and method

Abstract

The invention provides a reliability test system and method, and relates to the field of power devices, the reliability test system can carry out a high-temperature gate bias test and a high-temperature reverse bias test, multiple test modes are realized in one reliability test system, and the test efficiency is improved. Moreover, the reliability test system can apply an alternating signal to the to-be-tested device, thereby truly restoring an actual application scene, and enabling the reliability test system provided by the invention to accurately test the reliability of the power device. After the stress is applied, detection can be carried out immediately, and the relaxation effect of the power device is prevented from influencing the test result. Besides, in the high-temperature gate offset test, the pulse frequency or duty ratio of the electric stress pulse signal can be controlled through the half-bridge circuit, the parameters of the pulse signal can be flexibly changed by the reliability test system for different power devices, and the test applicability is improved.

Description

Technical Field

[0001] The present application relates to the field of power devices, and more specifically, to a reliability testing system and method. Background Art

[0002] Silicon carbide (SiC) materials have the characteristics of high critical breakdown electric field, high thermal conductivity, high electron saturation drift velocity, and large bandgap width, which greatly expands the energy processing capacity of power electronic devices (also called power semiconductor devices or power devices), and can meet the requirements of the next generation of power electronic equipment for higher power, smaller size, and working under more severe conditions. Among many power electronic devices, SiC metal oxide semiconductor field effect transistor (MOSFET) devices have attracted wide attention for their excellent high-frequency characteristics, high-temperature characteristics, and high-speed switching characteristics, and can be used in the fields of ultra-high voltage AC and DC transmission, electric vehicles, etc.

[0003] SiC MOSFET devices often operate under high voltage and high current conditions, and have high reliability requirements. In the production process of SiC MOSFET devices, high temperature gate bias (HTGB) and high temperature reverse bias (HTRB) tests can verify the reliability of SiC MOSFET devices, thereby eliminating devices with poor reliability.

[0004] Static HTGB and HTRB tests first place the power device in a stress application circuit for high temperature and high pressure treatment, and then place the power device in a test circuit for testing. At present, static HTGB and HTRB tests are simulated working condition aging tests, which are not sufficient to fully test the reliability of power devices. In addition, due to the relaxation effect of SiC MOSFET devices, the parameters before and after HTGB and HTRB tests are easy to recover, so that the detected reliability cannot reflect the situation under the actual working state, that is, the test accuracy is poor.

[0005] Therefore, how to accurately test the reliability of power devices is an urgent problem to be solved. Summary of the invention

[0006] The present application provides a reliability testing system and method, which can accurately detect the reliability of power devices.

[0007] In a first aspect, a reliability testing system is provided, the reliability testing system is used to test a device under test (DUT), the DUT includes a first port, a second port and a third port, the reliability testing system includes: a first electrical stress applying module, including a positive voltage source and a negative voltage source, the positive voltage source and the negative voltage source are connected to the first port through a first connecting circuit; a first half-bridge circuit is connected to the first connecting circuit; a thermal stress applying module is in contact with the DUT; a first testing module is connected to the second port and the first port; a second electrical stress applying module is connected to the third port and the second port; a second testing module is connected to the third port and the second port; wherein the The first electrical stress applying module is used to apply a first pulse to the first port, the first pulse includes a positive level signal and a negative level signal, and the pulse frequency and / or duty cycle of the first pulse is controlled by the first half-bridge circuit; the thermal stress applying module is used to heat the DUT by thermal conduction; the first test module is used to test the threshold voltage between the second port and the first port; the first half-bridge circuit is also used to apply a negative voltage or a zero voltage to the first port; the second electrical stress applying module is used to apply a second pulse to the third port; and the second test module is used to test the leakage current between the second port and the third port.

[0008] The reliability test system provided in the embodiment of the present application can perform high temperature gate bias (HTGB) test and high temperature reverse bias (HTRB) test, and multiple test modes are realized in a reliability test system, thereby improving test efficiency. In addition, the reliability test system can apply an alternating signal to the DUT, thereby truly restoring the actual application scenario, so that the reliability test system provided by the present application can accurately test the reliability of the power device. After the stress is applied, detection can be performed immediately to avoid the relaxation effect of the power device from affecting the test results. In addition, in the HTGB test, the pulse frequency or duty cycle of the electrical stress pulse signal can be controlled by a half-bridge circuit. For different power devices, the reliability test system can flexibly change the parameters of the pulse signal, thereby improving the applicability of the test.

[0009] In combination with the first aspect, in some implementations of the first aspect, the reliability testing system has multiple test interfaces, and the multiple test interfaces are used to connect to multiple DUTs.

[0010] Based on the above scheme, the reliability testing system provided in the embodiment of the present application has multiple test interfaces, so that the reliability of multiple DUTs can be tested at the same time, and different tests can be performed on multiple DUTs at the same time, thereby improving the test efficiency.

[0011] In combination with the first aspect, in certain implementations of the first aspect, the multiple test interfaces are respectively connected to the multiple DUTs through board-level circuits.

[0012] Based on the above scheme, the reliability testing system provided in the embodiment of the present application has multiple test interfaces, and each test interface can be connected to multiple DUTs respectively through board-level circuits. Compared with the scheme of using multiple test interfaces to connect multiple DUTs separately, the embodiment of the present application can reduce the impact of parasitic parameters on the reliability testing system, thereby being able to accurately test the reliability of power devices.

[0013] In combination with the first aspect, in some implementations of the first aspect, the thermal stress applying module includes a ceramic substrate.

[0014] The ceramic substrate has high thermal conductivity and good insulation performance, and can efficiently apply thermal stress to the DUT. If a circuit is used to connect the DUT and the current in the circuit is used to make the DUT self-heat, only a lower heating temperature can be achieved. If you want to further increase the temperature, you need to pass a larger current, increase the power loss, and need to support circuit elements that pass a larger current. The thermal stress application module provided in the embodiment of the present application can heat the DUT to a higher temperature, such as 175°C. If the power device self-heats to this temperature, additional failure factors will be introduced. In the actual application of power devices, due to the influence of factors such as ambient temperature, self-heating of power devices, and heating of other devices, the power device may reach a very high temperature. Therefore, the thermal stress application module provided in the present application can truly restore the actual application scenario, so that the reliability test system provided in the present application can accurately test the reliability of power devices.

[0015] In combination with the first aspect, in certain implementations of the first aspect, the second electrical stress applying module further includes: a second half-bridge circuit; wherein the pulse frequency and / or duty cycle of the second pulse is controlled by the second half-bridge circuit.

[0016] Based on the above solution, the electrical stress applying module in the HTRB test can include a half-bridge circuit, so that the pulse frequency or duty cycle of the second pulse can be adjusted as needed. Therefore, the reliability testing system provided by the embodiment of the present application can accurately test the reliability of power devices.

[0017] In combination with the first aspect, in certain implementations of the first aspect, the first electrical stress application module is also used to apply a test voltage to the first port, and the test voltage increases linearly; the first test module is specifically used to determine the threshold voltage between the second port and the first port when the test voltage meets a preset condition.

[0018] Based on the above scheme, since the test voltage increases linearly, a more accurate preset condition can be set so that the test voltage gradually approaches the direction that satisfies the preset condition, and the threshold voltage is determined when the preset condition is met. The reliability test system provided in the embodiment of the present application can accurately collect the threshold voltage that satisfies the preset condition, so that the reliability test system can accurately test the reliability of the power device.

[0019] In combination with the first aspect, in some implementations of the first aspect, the reliability testing system further includes: a third testing module connected to the second port and the third port, the third testing module being used to test the on-resistance between the second port and the third port.

[0020] Based on the above scheme, the reliability testing system provided by the embodiment of the present application can also determine the on-resistance in the HTRB test. The on-resistance can also be used to evaluate the reliability of the power device. Therefore, the reliability testing system provided by the embodiment of the present application can accurately test the reliability of the power device.

[0021] In a second aspect, an embodiment of the present application provides a reliability testing method, which is applied to a reliability testing system, wherein the reliability testing system is used to test a device under test (DUT), wherein the DUT includes a first port, a second port, and a third port, and the reliability testing system includes: a first electrical stress applying module, including a positive voltage source, a negative voltage source, and a first half-bridge circuit, wherein the positive voltage source and the negative voltage source are connected to the first port through a first connecting circuit; a first half-bridge circuit, connected to the first connecting circuit; a thermal stress applying module, in contact with the DUT; a first testing module, connected to the second port and the first port; a second electrical stress applying module, connected to the third port and the second port; a second testing module, connected to the third port and the first Two ports are connected; wherein the reliability testing method comprises: applying a first pulse to the first port through the first electrical stress applying module, the first pulse comprises a positive level signal and a negative level signal, and the pulse frequency and / or duty cycle of the first pulse is controlled by the first half-bridge circuit; testing the threshold voltage between the second port and the first port through the first testing module; applying a negative voltage or a zero voltage to the first port through the first half-bridge circuit; applying a second pulse to the third port through the second electrical stress applying module; and testing the leakage current between the second port and the third port through the second testing module.

[0022] In combination with the second aspect, in some implementations of the second aspect, the reliability testing system has a plurality of test interfaces, and the plurality of test interfaces are used to connect to a plurality of the DUTs.

[0023] In combination with the second aspect, in certain implementations of the second aspect, the multiple test interfaces are respectively connected to the multiple DUTs through board-level circuits.

[0024] In combination with the second aspect, in certain implementations of the second aspect, it is characterized in that the thermal stress applying module includes a ceramic substrate.

[0025] In combination with the second aspect, in some implementations of the second aspect, the second electrical stress applying module also includes a second half-bridge circuit, wherein the pulse frequency and / or duty cycle of the second pulse is controlled by the second half-bridge circuit.

[0026] In combination with the second aspect, in certain implementations of the second aspect, the reliability testing method also includes: applying a test voltage to the first port through the first electrical stress application module, and the test voltage increases linearly; wherein, testing the threshold voltage between the second port and the first port through the first test module includes: when the test voltage meets a preset condition, determining the threshold voltage between the second port and the first port through the first test module.

[0027] In combination with the second aspect, in certain implementations of the second aspect, the reliability testing system further includes: a third testing module connected to the second port and the third port; wherein the reliability testing method further includes: testing the on-resistance between the second port and the third port through the third testing module.

[0028] In a third aspect, a reliability testing device is provided, comprising a control module, wherein the control module is used to control the reliability testing system of the first aspect or any possible implementation of the first aspect.

[0029] In a fourth aspect, a computing device is provided, including a processor and a memory, wherein the processor is used to execute instructions stored in the memory so that the computing device executes the reliability testing method of the second aspect or any possible implementation of the second aspect.

[0030] In a fifth aspect, a computer program product comprising instructions is provided. When the instructions are executed by a computing device, the computing device executes the reliability testing method of the second aspect or any possible implementation of the second aspect.

[0031] In a sixth aspect, a computer-readable storage medium is provided, comprising computer program instructions. When the computer program instructions are executed by a computing device, the computing device executes the reliability testing method of the second aspect or any possible implementation of the second aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1It is a schematic block diagram of a reliability testing system provided in an embodiment of the present application.

[0033] Figure 2 This is a schematic diagram of the reliability testing system provided in an embodiment of the present application during operation.

[0034] Figure 3 This is another schematic diagram of the reliability testing system provided in an embodiment of the present application during operation.

[0035] Figure 4 It is a schematic block diagram of another reliability testing system provided in an embodiment of the present application.

[0036] Figure 5 It is a schematic block diagram of a reliability testing device provided in this application.

[0037] Figure 6 It is a schematic flow chart of a reliability testing method provided in an embodiment of the present application.

[0038] Figure 7 It is a schematic block diagram of a computing device provided in an embodiment of the present application.

[0039] Figure 8 It is a schematic architecture diagram of a reliability testing system provided in an embodiment of the present application. DETAILED DESCRIPTION

[0040] The technical solution in this application will be described below in conjunction with the accompanying drawings.

[0041] The present application will present various aspects, embodiments or features around a system that may include multiple devices, components, modules, etc. It should be understood and appreciated that each system may include additional devices, components, modules, etc., and / or may not include all of the devices, components, modules, etc. discussed in conjunction with the figures. In addition, combinations of these schemes may also be used.

[0042] In addition, in the embodiments of the present application, words such as "exemplary" and "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" in the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of the word "exemplary" is intended to present concepts in a concrete way.

[0043] The business scenarios described in the embodiments of the present application are intended to more clearly illustrate the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided in the embodiments of the present application. Ordinary technicians in this field can know that with the emergence of new business scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.

[0044] References to "one embodiment" or "some embodiments" etc. described in this specification mean that a particular feature, structure or characteristic described in conjunction with the embodiment is included in one or more embodiments of the present application. Thus, the phrases "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. appearing in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0045] Silicon carbide (SiC) materials have the characteristics of high critical breakdown electric field, high thermal conductivity, high electron saturation drift velocity, large bandgap width, etc., which greatly expands the energy processing capacity of power electronic devices (also called power semiconductor devices or power devices), and can meet the requirements of the next generation of power electronic equipment for higher power, smaller size and working under more severe conditions. Therefore, power electronic devices made of SiC materials have been widely used in power grids, ships, high-speed trains, electric vehicles and other fields. Among many power electronic devices, SiC metal oxide semiconductor field effect transistor (metal oxide semiconductor field effect transistor, MOSFET) devices have received widespread attention for their excellent high-frequency characteristics, high-temperature characteristics, high-speed switching characteristics, etc., and can be used in ultra-high voltage AC and DC transmission, electric vehicles and other fields.

[0046] SiC MOSFET devices often operate under high voltage and high current conditions, and have high reliability requirements. Reliability is an important indicator of products, especially in the automotive and aviation industries, where reliability standards are very strict.

[0047] During the production process of SiC MOSFET devices, high temperature gate bias (HTGB) and high temperature reverse bias (HTRB) tests can verify the reliability of SiC MOSFET devices, thereby eliminating devices with poor reliability.

[0048] Specifically, since the channel mobility of SiC MOSFET devices is not high, in order to obtain a lower on-resistance, the turn-on voltage that needs to be applied to the gate is generally above 18V, or even up to 20V. Higher voltages will bring megavolt-level oxide layer electric fields to the gate oxide layer of SiC MOSFET devices, affecting the reliability of the gate oxide layer. On the other hand, when SiC MOSFET devices operate in high-temperature and high-power application environments, they are often in a high-temperature, high-voltage, reverse-biased state. In this case, the mobile impurity ions introduced during the production of SiC MOSFET devices may move under the action of a strong electric field, causing the leakage current of the SiC MOSFET device to increase, thereby affecting reliability. By comparing the threshold voltage (V th ), on-resistance (R on ) and leakage current (I leak ) to evaluate the reliability of SiC MOSFET devices at high temperatures.

[0049] Static HTGB and HTRB tests first place the power device in a stress application circuit for high temperature and high pressure treatment, and then place the power device in a test circuit for testing. Due to the relaxation effect of SiC MOSFET devices, the V th , R on and I leak It is easy to recover, so that the detected reliability cannot reflect the situation under the actual working state, that is, the test accuracy is poor.

[0050] Therefore, how to accurately test the reliability of power devices is an urgent problem to be solved.

[0051] Figure 1 1 is a schematic block diagram of a reliability testing system 100 provided in an embodiment of the present application. The reliability testing system 100 can accurately detect the reliability of power devices.

[0052] The reliability testing system 100 is used to test a device under test (DUT) 110 . The DUT 110 includes a first port 112 , a second port 114 , and a third port 116 .

[0053] For example, in a MOSFET device, the first port 112 may be a gate, the second port 114 may be a source, and the third port 116 may be a drain. For another example, in an insulated gate bipolar transistor (IGBT), the first port 112 may be a base, the second port 114 may be an emitter, and the third port 116 may be a collector.

[0054] The reliability testing system 110 includes: a first electrical stress applying module 120 , a first half-bridge circuit 140 , a thermal stress applying module 150 , a first testing module 160 , a second electrical stress applying module 170 and a second testing module 180 .

[0055] Among them, the first electrical stress applying module 120 includes a positive voltage source 122 and a negative voltage source 124, the positive voltage source 122 and the negative voltage source 124 are connected to the first port 112 through a first connecting circuit 130, the first half-bridge circuit 140 is connected to the first connecting circuit 130, the thermal stress applying module 150 is in contact with the DUT 110, the first testing module 160 is connected to the second port 114 and the first port 112, the second electrical stress applying module 170 is connected to the third port 116 and the second port 114, and the second testing module 180 is connected to the third port 116 and the second port 114.

[0056] See also Figure 1 The DUT 110 includes a first port 112 , a second port 114 , and a third port 116 , wherein the first port 112 is used to control whether the second port 114 and the third port 116 are conductive or non-conductive. Figure 1 In the figure, the interfaces of the first port 112, the second port 114 and the third port 116 are indicated by circles, and the connection lines connected to the vicinity of the interfaces can be regarded as being connected to the interfaces. For example, the first connection circuit 130 is connected to the first port 112, the first test module 160, the second test module 180 and the second electrical stress applying module 170 are connected to the second port 114, and the second test module 180 and the second electrical stress applying module 170 are connected to the third port 116.

[0057] The DUT 110 may include any power device, such as SiC MOSFET, but the present application is not limited to this, and for example, may also be applied to other power devices.

[0058] The reliability testing system 100 can perform both HTGB testing and HTRB testing. Figure 2 Some embodiments of HTGB testing are introduced.

[0059] Figure 2 1 is a schematic diagram of the reliability testing system 100 provided in the embodiment of the present application when in operation. Figure 2 , Figure 2 The upper part of represents the change of the voltage of the third port 116 with time, Figure 2 The lower part of represents the change of the voltage of the first port 112 over time.

[0060] Figure 2The voltage value is positive when it is above the axis and negative when it is below the axis. Figure 2 As can be seen from the upper part of FIG. 2 , the voltage of the third port 116 is zero in the stress application stage 210 and appears to be a positive voltage level in the detection stage 220. In addition, Figure 2 Only one stress application phase 210 and detection phase 220 are marked, but it is clear to those skilled in the art that the stress application phase 210 and the detection phase 220 may be performed alternately periodically.

[0061] The modules related to the HTGB test include a first electrical stress applying module 120, a first half-bridge circuit 140, a thermal stress applying module 150 and a first testing module 160. The HTGB test may include a stress applying phase 210 and a testing phase 220. Some embodiments of the stress applying phase 210 are first introduced below.

[0062] The first electrical stress applying module 120 is used to apply a first pulse to the first port 112 . The first pulse includes a positive level signal and a negative level signal. The pulse frequency and / or duty ratio of the first pulse is controlled by the first half-bridge circuit 140 .

[0063] Figure 2 The waveform of the first pulse in is a square wave, but the present application does not limit the waveform of the first pulse, for example, it can also be a sharp pulse, a bell wave, a trapezoidal pulse, etc.

[0064] The positive voltage source 122 can be used to provide a positive voltage, and the negative voltage source 124 can be used to provide a negative voltage. The positive voltage source 122 and the negative voltage source 124 can be periodically switched on and off alternately, thereby outputting a first pulse with a certain voltage amplitude, pulse frequency and duty cycle. The voltage amplitude can be controlled by the positive voltage source 122 and the negative voltage source 124.

[0065] In some embodiments, the first electrical stress applying module 120 may include a driving circuit for converting a positive voltage and a negative voltage into a first pulse.

[0066] The first half-bridge circuit 140 serves as a control circuit to control the pulse frequency and / or duty cycle of the first pulse.

[0067] In some embodiments, the first half-bridge circuit 140 includes an inverter (not shown in the figure), which can adjust the pulse frequency of the first pulse.

[0068] In some embodiments, the first half-bridge circuit 140 includes a high resistance circuit (not shown in the figure), which can adjust the duty cycle of the first pulse.

[0069] The thermal stress applying module 150 is used to heat the DUT 110 by thermal conduction. Since the thermal stress applying module 150 can be in direct contact with the DUT 110, the DUT 110 can be heated by thermal conduction.

[0070] In some embodiments, the thermal stress applying module 150 includes a ceramic substrate.

[0071] The ceramic substrate has high thermal conductivity and good insulation performance, and can efficiently apply thermal stress to the DUT 110. If a circuit is used to connect the DUT 110 and the current in the circuit is used to make the DUT 110 self-heated, only a relatively low heating temperature can be achieved. If you want to further increase the temperature, you need to pass a larger current, increase the power loss, and need to support circuit elements that pass a larger current. The thermal stress application module 150 provided in the embodiment of the present application can heat the DUT 110 to a higher temperature, such as 175°C. If the power device self-heats to this temperature, additional failure factors will be introduced. In the actual application of power devices, due to the influence of factors such as ambient temperature, self-heating of power devices, and heating of other devices, the power devices may reach very high temperatures. Therefore, the thermal stress application module 150 provided in the present application can truly restore the actual application scenario, so that the reliability testing system 100 provided in the present application can accurately test the reliability of power devices.

[0072] In this way, the aging of the gate oxide layer of the first port 112 is accelerated by the first electrical stress applying module 120 and the thermal stress applying module 150 .

[0073] The first electrical stress applying module 120 in the embodiment of the present application applies an alternating signal, which can truly restore the actual application scenario, so that the reliability testing system 100 provided in the present application can accurately test the reliability of the power device.

[0074] It can be understood that in the stress application stage 210 , the second port 114 and the third port 116 may be short-circuited and grounded.

[0075] Some embodiments of the detection phase 220 of the HTGB test are described below.

[0076] The first test module 160 is used to test the threshold voltage between the second port 114 and the first port 112. In general, a voltage can be applied between the second port 114 and the third port 116 so that when the first port 112 is turned on, a current flows between the second port 114 and the third port 116. A test voltage is applied to the first port 112 to turn on the first port 112. Subsequently, the threshold voltage between the second port 114 and the first port 112 is collected.

[0077] In some embodiments, the second electrical stress applying module 170 may apply a voltage between the second port 114 and the third port 116. In other embodiments, the second testing module 180 may apply a voltage between the second port 114 and the third port 116. In still other embodiments, the reliability testing system 100 further includes a voltage source ( Figure 1 ), a voltage is applied between the second port 114 and the third port 116 by the voltage source.

[0078] Applying a voltage between the second terminal 114 and the third terminal 116 may be reflected in Figure 2 The detection stage 220 of the upper part, however Figure 2 This is merely illustrative, and it is apparent that other voltage waveforms may also be used to apply a voltage between the second port 114 and the third port 116 .

[0079] In some embodiments, the first electrical stress applying module 120 is further used to apply a test voltage to the first port 112, and the test voltage increases linearly; the first test module 160 is specifically used to determine the threshold voltage between the second port 114 and the first port 112 when the test voltage meets a preset condition.

[0080] The linear increase of the test voltage can be seen in Figure 2 The lower part is the detection stage 220. It should be noted that the present application does not limit the test voltage to only increase linearly until the preset condition is met, for example, it can also be directly applied to the first port 112 in the form of a level.

[0081] For example, the first test module 160 may further include a test resistor ( Figure 1 (not shown in the figure), as the test voltage increases, the current flowing through the test resistor also increases. The preset condition can be a preset current value of the test resistor. When the test voltage reaches a certain value, so that the current flowing through the test resistor reaches the preset current value, the preset condition is met. At this time, the first test module 160 can collect the threshold voltage between the second port 114 and the first port 112.

[0082] The first test module 160 may also include an operational amplifier circuit ( Figure 1 (not shown) to control the test voltage to gradually increase.

[0083] Based on the above scheme, since the test voltage increases linearly, a more accurate preset condition can be set so that the test voltage gradually approaches the direction that satisfies the preset condition, and the threshold voltage is determined when the preset condition is met. The reliability test system 100 provided in the embodiment of the present application can accurately collect the threshold voltage that satisfies the preset condition, so that the reliability test system 100 can accurately test the reliability of the power device.

[0084] See also Figure 2 The time interval between the stress application stage 210 and the detection stage 220 is very small, so the relaxation effect of the power device can be overcome, so that the reliability testing system 100 provided in the present application can accurately test the reliability of the power device through the HTGB test.

[0085] In some embodiments, the reliability testing system 100 further includes: a third testing module ( Figure 1 ), connected to the second port 114 and the third port 116 , and the third test module is used to test the on-resistance between the second port 114 and the third port 116 .

[0086] For example, the third test module may also include a test resistor, and as the test voltage increases, the current flowing through the test resistor also increases. In this way, by setting a preset current value, when the current flowing through the test resistor reaches the preset current value, the third test module can collect the voltage value between the second port 114 and the third port 116, and determine the ratio of the voltage value to the preset current value as the on-resistance.

[0087] Based on the above scheme, the reliability testing system 100 provided in the embodiment of the present application can also determine the on-resistance in the HTRB test. The on-resistance can also be used to evaluate the reliability of the power device. Therefore, the reliability testing system 100 provided in the embodiment of the present application can accurately test the reliability of the power device.

[0088] Combine the following Figure 3 Some embodiments of HTRB testing are introduced.

[0089] Figure 3 This is another schematic diagram of the reliability testing system 100 provided in an embodiment of the present application during operation. Figure 3 The method of showing Figure 2 Similar, so the undescribed parts can be seen in Figure 2 Description.

[0090] The modules related to the HTRB test include the second electrical stress applying module 170, the first half-bridge circuit 140, the thermal stress applying module 150 and the second testing module 180. The HTRB test may include a stress applying phase 310 and a detection phase 320. Some embodiments of the stress applying phase 310 are first introduced below.

[0091] In the stress application stage 310, the second electrical stress application module 170 is used to apply a second pulse to the third port 116. The second pulse may be Figure 3 However, the present application does not limit the second pulse, for example, the second pulse may also be a sharp pulse, a bell wave, a trapezoidal pulse, etc.

[0092] In some embodiments, the second electrical stress applying module 170 may further include a voltage source ( Figure 1 (not shown in the figure), the voltage source is used to provide a positive voltage, thereby achieving the application of a second pulse to the third port 116.

[0093] The second pulse can be understood as an alternating signal. Since there is no negative voltage at the third port, the actual working scene is simulated by the "interval" positive pulse. Therefore, the second electrical stress applying module 170 in the embodiment of the present application can apply an alternating signal, thereby truly restoring the actual application scene, so that the reliability testing system 100 provided by the present application can accurately test the reliability of the power device.

[0094] In some embodiments, the first half-bridge circuit 140 is further configured to apply a negative voltage or zero voltage to the first port 112. By applying a negative voltage or zero voltage, the first half-bridge circuit 140 closes the first port 112, thereby turning off the DUT 110 during the stress application phase 310.

[0095] Some embodiments of the detection phase 320 of HTRB are described below.

[0096] The second testing module 180 may be used to test a leakage current between the second port 114 and the third port 116 .

[0097] In some embodiments, the first half-bridge circuit 140 is still used to apply a negative voltage or a zero voltage to the first port 112 during the detection phase 320 , so that the DUT 110 is in a shut-off state during the HTRB test.

[0098] See also Figure 3 The time interval between the stress application stage 310 and the detection stage 320 is very small, so the relaxation effect of the power device can be overcome, so that the reliability testing system 100 provided in the present application can accurately test the reliability of the power device through the HTRB test.

[0099] In some embodiments, the second test module 180 may apply a voltage between the second port 114 and the third port 116 to detect a leakage current between the second port 114 and the third port 116 .

[0100] In some embodiments, the second test module 180 includes a test resistor ( Figure 1 (not shown), the second test module 180 can determine the leakage current as the current flowing through the test resistor.

[0101] When the DUT 110 fails, the leakage current may be very large, thereby damaging the reliability testing system 100. Therefore, the reliability testing system 100 can monitor the value of the leakage current, and when the value exceeds a preset threshold, the reliability testing system 100 stops testing or stress application, thereby protecting the reliability testing system 100 from damage.

[0102] In some embodiments, the thermal stress applying module 150 further heats the DUT 110 during the detection phase 220 or the detection phase 320. That is, the thermal stress applying module 150 can operate during the entire HTGB test and the entire HTRB test.

[0103] Figure 4 It is a schematic block diagram of another reliability testing system 100 provided in an embodiment of the present application.

[0104] See also Figure 4 In some embodiments, the reliability test system has multiple test interfaces 410 , and the multiple test interfaces 410 are used to connect with multiple DUTs 110 .

[0105] Each module that needs to be connected in the reliability testing system 100 can be connected to the test interface 410 . Figure 4 Only two test interfaces 410 are shown, but the present application is not limited thereto, and there may be a greater number of test interfaces 410 . Figure 4 It is only shown that each module in the reliability testing system 100 is connected to two test interfaces 410 , and it should be understood that each module is also connected to other test interfaces 410 .

[0106] Based on the above scheme, the reliability testing system 100 provided in the embodiment of the present application has multiple test interfaces 410, which can test the reliability of multiple DUTs 110 at the same time, and can also perform different tests on multiple DUTs 110 at the same time, thereby improving the test efficiency.

[0107] In some embodiments, the plurality of test interfaces 410 are respectively connected to the plurality of DUTs 110 through board-level circuits.

[0108] The reliability test system 100 may further include a test module. For example, each DUT 110 may correspond to a test module (parallel), that is, a test module may carry a DUT 110. The present application does not limit the test module, and each test module may also correspond to carry multiple DUTs 110. The test modules are in parallel, that is, each test module includes the same circuit topology.

[0109] In some embodiments, each test module may correspond to a ceramic substrate, and the ceramic substrate is used to heat the DUT 110 .

[0110] The test modules are connected to each other via a board-level circuit, so that the board-level circuit can integrate the interfaces to be tested of each test module onto the circuit board.

[0111] The plurality of test interfaces 410 are connected to interfaces to be tested on the board-level circuit, thereby achieving connection between the reliability test system 100 and the plurality of DUTs 110 .

[0112] Based on the above scheme, the reliability testing system 100 provided in the embodiment of the present application has multiple test interfaces 410, and each test interface 410 can be connected to multiple DUTs 110 respectively through board-level circuits. Compared with the scheme of using multiple test interfaces 410 to connect to multiple DUTs 110 separately, the embodiment of the present application can reduce the impact of parasitic parameters on the reliability testing system 100, thereby being able to accurately test the reliability of power devices.

[0113] In some embodiments, the second electrical stress applying module 170 further includes: a second half-bridge circuit, and the pulse frequency and / or duty cycle of the second pulse is controlled by the second half-bridge circuit.

[0114] The method for controlling the pulse frequency and / or duty cycle of the second half-bridge circuit can be referred to the first half-bridge circuit and will not be described in detail here.

[0115] Based on the above solution, the electrical stress applying module in the HTRB test can include a half-bridge circuit, so that the pulse frequency or duty cycle of the second pulse can be adjusted as needed. Therefore, the reliability testing system 100 provided in the embodiment of the present application can accurately test the reliability of power devices.

[0116] The reliability test system 100 provided in the embodiment of the present application can perform HTGB test and HTRB test, and multiple test modes are implemented in a reliability test system 100, thereby improving the test efficiency. In addition, the reliability test system 100 can apply an alternating signal to the DUT 110, thereby truly restoring the actual application scenario, so that the reliability test system 100 provided in the present application can accurately test the reliability of the power device. After the stress is applied, detection can be performed immediately to avoid the relaxation effect of the power device from affecting the test results. In addition, in the HTGB test, the pulse frequency or duty cycle of the electrical stress pulse signal can be controlled by a half-bridge circuit. For different power devices, the reliability test system 100 can flexibly change the parameters of the pulse signal, thereby improving the applicability of the test.

[0117] Figure 5 It is a schematic block diagram of a reliability testing device 500 provided in the present application.

[0118] The reliability testing device 500 may include a control module 510 , and the control module 510 is used to control the reliability testing system 100 in any one of the aforementioned embodiments.

[0119] In some embodiments, the control module 510 includes a digital signal processing (DSP) chip. In this way, the DSP chip can control the modules in the reliability test system 100 to perform HTGB or HTRB testing. For example, the reliability test system 100 includes a plurality of relays, and the DSP chip can control the connection or disconnection of each module with the DUT 110 by controlling the relays. For another example, the DSP chip can send an indication signal to the first half-bridge circuit 140, and the indication signal is used to instruct the first half-bridge circuit 140 to control the pulse frequency or duty cycle of the first pulse, or to instruct the first half-bridge circuit 140 to apply a negative voltage or a zero voltage to the first port 112. For another example, the DSP chip can control the positive voltage source 122 or the negative voltage source 124 to control the voltage amplitude of the first pulse.

[0120] In other embodiments, the control module 510 may include code running on a computing instance. The computing instance may include at least one of a physical host (computing device), a virtual machine, and a container. Furthermore, the computing instance may be one or more.

[0121] In some other embodiments, the control module 510 may include at least one computing device. Alternatively, the control module 510 may also be a device implemented using an application-specific integrated circuit (ASIC) or a programmable logic device (PLD). The PLD may be a complex programmable logical device (CPLD), a field-programmable gate array (FPGA), a generic array logic (GAL), or any combination thereof.

[0122] Combine the following Figure 6 The method embodiments of the present application are introduced. The method embodiments correspond to the above-mentioned system embodiments, so the parts that are not described in detail can be referred to the above-mentioned system embodiments. The method can be implemented by controlling the above-mentioned system to implement any possible implementation method in the above-mentioned system.

[0123] Figure 66 is a schematic flow chart of a reliability testing method 600 provided in an embodiment of the present application. The testing method 600 is applied to the reliability testing system 100, and the reliability testing method 600 can be executed by any device with computing function, for example, by a DSP chip.

[0124] S610 , applying a first pulse to the first port 112 through the first electrical stress applying module 120 .

[0125] The first pulse includes a positive level signal and a negative level signal, and the pulse frequency and / or duty cycle of the first pulse is controlled by the first half-bridge circuit 140 .

[0126] S620 , testing a threshold voltage between the second port 114 and the first port 112 by the first testing module 160 .

[0127] S630 , applying a negative voltage or a zero voltage to the first port 112 through the first half-bridge circuit 140 .

[0128] S640 , applying a second pulse to the third port 116 through the second electrical stress applying module 170 .

[0129] S650 , testing the leakage current between the second port 114 and the third port 116 by the second testing module 180 .

[0130] In some embodiments, the reliability testing method 600 further includes: applying a test voltage to the first port 112 through the first electrical stress applying module 120, and the test voltage increases linearly; wherein S620 includes: when the test voltage meets a preset condition, determining the threshold voltage between the second port 114 and the first port 112 through the first testing module 160.

[0131] In some embodiments, the reliability testing system 100 further includes: a third testing module connected to the second port 114 and the third port 116 ; wherein the reliability testing method 600 further includes: testing the on-resistance between the second port 114 and the third port 116 by the third testing module.

[0132] Figure 7 is a schematic block diagram of a computing device 700 provided in an embodiment of the present application. Figure 7 As shown, computing device 700 includes: bus 702, processor 704, memory 706 and communication interface 708. Processor 704, memory 706 and communication interface 708 communicate through bus 702. Computing device 700 can be a server or a terminal device. It should be understood that the present application does not limit the number of processors and memories in computing device 700.

[0133] The bus 702 may be a peripheral component interconnect (PCI) bus or an extended industry standard architecture (EISA) bus. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 7 The bus 702 may include a path for transmitting information between various components of the computing device 700 (eg, the memory 706, the processor 704, and the communication interface 708).

[0134] The processor 704 may include any one or more of a central processing unit (CPU), a graphics processing unit (GPU), a microprocessor (MP), or a digital signal processor (DSP).

[0135] The memory 706 may include a volatile memory, such as a random access memory (RAM). The memory 706 may also include a non-volatile memory, such as a read-only memory (ROM), a flash memory, a hard disk drive (HDD), or a solid state drive (SSD).

[0136] The memory 706 stores executable program codes, and the processor 704 executes the executable program codes to implement the functions of the control module 510, thereby implementing the reliability testing method 600. That is, the memory 706 stores instructions for executing the reliability testing method 600.

[0137] The communication interface 708 uses a transceiver module such as, but not limited to, a network interface card or a transceiver to implement communication between the computing device 700 and other devices or communication networks.

[0138] The embodiment of the present application also provides a computer program product including instructions. The computer program product may be software or a program product including instructions that can be run on a computing device or stored in any available medium. When the computer program product is run on at least one computing device, the at least one computing device executes the reliability testing method 600 described above.

[0139] The embodiment of the present application also provides a computer-readable storage medium. The computer-readable storage medium can be any available medium that can be stored by the computing device or a data storage device such as a data center containing one or more available media. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state hard disk). The computer-readable storage medium includes instructions that instruct the computing device to execute the above reliability testing method 600.

[0140] Figure 8 It is a schematic architecture diagram of a reliability testing system 100 provided in an embodiment of the present application.

[0141] For example, DC4 and DC5 may belong to the first electrical stress applying module 120, V th The sampling module may belong to the first test module, the reverse bias (RB) direct current (DC) power supply may belong to the second electrical stress applying module, and the I leak The sampling module may belong to the second testing module.

[0142] The DSP chip transmits the signal to the decoder through the general purpose input output (GPIO) interface for decoding, and then transmits it to the interface of the test module, through which the internal devices of the test module (such as relays) are controlled for testing. The DSP chip can control each sampling module (such as V th Sampling module, I leak Sampling module).

[0143] In the stress application phase 210 of the HTGB test, the DSP chip can control the relays S3n, S4n, and S5n to close, and the other relays of the test module are disconnected, and the first pulse is provided by the constant voltage source DC4 or DC5 (the circuit connecting DC4 and DC5 to the DUT is omitted in the figure), and the pulse frequency or duty cycle of the first pulse is controlled by the half-bridge circuit, and the half-bridge circuit includes a gate bias (gate bias, GB) DC power supply, and the GB DC power supply can output a positive voltage or a negative voltage. For example, the DSP chip can send an indication signal of an alternating current (AC) stress pulse width (pulse width, PW) to control the half-bridge circuit.

[0144] In the detection phase 220 of the HTGB, the DSP chip can control the relay S3n to be disconnected and S1n, S5n, and S6n to be closed. A voltage is applied between the second port 114 and the third port 116 of the DUT through the constant voltage source DC3, and the constant current source DC2 can control the magnitude of the current of the first port 112 through the operational amplifier. The monitoring test resistor R s The current flowing through R s When the current meets the preset conditions, V th The sampling module collects a threshold voltage between the first port 112 and the second port 114 .

[0145] In the scheme of detecting on-resistance, the DSP chip can control the relays S8n and S9n to close. When the current flowing through Rs meets the preset conditions, R on The sampling module collects the voltage between the second port 114 and the third port 116 and determines the on-resistance of the power device through the ratio of the voltage to the current.

[0146] In the stress application phase 310 of the HTRB test, the DSP chip can control the relays S7n and S3n to close. The DSP chip also includes a micro-controller unit (MCU), and the MCU applies a second pulse between the second port 114 and the third port 116 through a half-bridge circuit including an RB DC power supply. The half-bridge circuit including a GB DC power supply controls the first port 112 and applies a negative voltage or a zero voltage to the first port 112 through the relay S3n.

[0147] In the detection phase 320 of the HTRB test, the DSP chip can control the relays S7n and S3n to close. The voltage source DC6 applies a voltage between the second port 114 and the third port 116 of the DUT. leak The sampling module detects the current flowing through the resistor R leak The current of the DUT is determined.

[0148] It is understandable that the above scheme is only a description of a test module, where n can be an integer from 1 to 8. In other words, Figure 8 The example shows a case where there are 8 test modules, and 8 DUTs can be tested simultaneously. However, the present application does not limit the number of test modules, and for example, there may be more or fewer test modules.

[0149] Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0150] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0151] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0152] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A reliability testing system, characterized in that: The reliability testing system is used to test a device under test (DUT), wherein the DUT comprises a first port, a second port and a third port, and the reliability testing system comprises: A first electrical stress applying module, comprising a positive voltage source and a negative voltage source, wherein the positive voltage source and the negative voltage source are connected to the first port through a first connecting circuit; A first half-bridge circuit connected to the first connecting circuit; A thermal stress applying module in contact with the DUT; A first test module connected to the second port and the first port; A second electrical stress applying module connected to the third port and the second port; A second test module is connected to the third port and the second port; wherein, The first electrical stress applying module is used to apply a first pulse to the first port, the first pulse includes a positive level signal and a negative level signal, and the pulse frequency and / or duty cycle of the first pulse is controlled by the first half-bridge circuit; The thermal stress applying module is used to heat the DUT by heat conduction; The first test module is used to test the threshold voltage between the second port and the first port; The first half-bridge circuit is further used to apply a negative voltage or a zero voltage to the first port; The second electrical stress applying module is used to apply a second pulse to the third port; The second testing module is used to test the leakage current between the second port and the third port.

2. The reliability testing system according to claim 1, characterized in that: The reliability testing system has a plurality of test interfaces, and the plurality of test interfaces are used to connect with a plurality of the DUTs.

3. The reliability testing system according to claim 2, characterized in that: The multiple test interfaces are respectively connected to the multiple DUTs through board-level circuits.

4. The reliability testing system according to any one of claims 1 to 3, characterized in that: The thermal stress applying module includes a ceramic substrate.

5. The reliability testing system according to any one of claims 1 to 4, characterized in that: The second electrical stress applying module further includes: a second half-bridge circuit; wherein the pulse frequency and / or duty cycle of the second pulse is controlled by the second half-bridge circuit.

6. The reliability testing system according to any one of claims 1 to 5, characterized in that: The first electrical stress applying module is further used to apply a test voltage to the first port, and the test voltage increases linearly; The first test module is specifically configured to determine a threshold voltage between the second port and the first port when the test voltage meets a preset condition.

7. The reliability testing system according to any one of claims 1 to 6, characterized in that: Also includes: A third testing module is connected to the second port and the third port, and is used to test the on-resistance between the second port and the third port.

8. A reliability testing method, characterized in that: The reliability testing method is applied to a reliability testing system, the reliability testing system is used to test a device under test (DUT), the DUT includes a first port, a second port and a third port, and the reliability testing system includes: A first electrical stress applying module, comprising a positive voltage source, a negative voltage source and a first half-bridge circuit, wherein the positive voltage source and the negative voltage source are connected to the first port through a first connecting circuit; A first half-bridge circuit connected to the first connecting circuit; A thermal stress applying module in contact with the DUT; A first test module connected to the second port and the first port; A second electrical stress applying module connected to the third port and the second port; A second test module is connected to the third port and the second port; wherein the reliability test method includes: Applying a first pulse to the first port through the first electrical stress applying module, wherein the first pulse includes a positive level signal and a negative level signal, and a pulse frequency and / or a duty cycle of the first pulse is controlled by the first half-bridge circuit; Testing a threshold voltage between the second port and the first port by the first testing module; Applying a negative voltage or a zero voltage to the first port through the first half-bridge circuit; Applying a second pulse to the third port through the second electrical stress applying module; The leakage current between the second port and the third port is tested by the second testing module.

9. The reliability testing method according to claim 8, characterized in that: The reliability testing system has a plurality of test interfaces, and the plurality of test interfaces are used to connect with a plurality of the DUTs.

10. The reliability testing method according to claim 9, characterized in that: The multiple test interfaces are respectively connected to the multiple DUTs through board-level circuits.

11. The reliability testing method according to any one of claims 8 to 10, characterized in that: The thermal stress applying module includes a ceramic substrate.

12. The reliability testing method according to any one of claims 8 to 11, characterized in that: The second electrical stress applying module further includes a second half-bridge circuit, wherein a pulse frequency and / or a duty cycle of the second pulse is controlled by the second half-bridge circuit.

13. The reliability testing method according to any one of claims 8 to 12, characterized in that: Also includes: Applying a test voltage to the first port through the first electrical stress applying module, the test voltage increases linearly; wherein testing a threshold voltage between the second port and the first port through the first test module comprises: When the test voltage meets a preset condition, a threshold voltage between the second port and the first port is determined by the first test module.

14. The reliability testing method according to any one of claims 8 to 13, characterized in that: The reliability testing system further comprises: A third testing module is connected to the second port and the third port; wherein the reliability testing method further comprises: The on-resistance between the second port and the third port is tested by the third testing module.

15. A reliability testing device, characterized in that: include: A control module, wherein the control module is used to control the reliability testing system as described in claims 1 to 7.

16. A computing device, characterized in that It comprises a processor and a memory, wherein the processor is used to execute instructions stored in the memory so that the computing device executes the reliability testing method according to any one of claims 8 to 14.

17. A computer program product comprising instructions, characterized in that When the instructions are executed by a computing device, the computing device executes the reliability testing method according to any one of claims 8 to 14.

18. A computer-readable storage medium, characterized in that: The method comprises computer program instructions. When the computer program instructions are executed by a computing device, the computing device executes the reliability testing method according to any one of claims 8 to 14.

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