Light-emitting module and display device

Abstract

The embodiment of the present disclosure provides a light-emitting module and a display device. The light-emitting module comprises a substrate, and a light-transmitting and reflecting film layer, a color modulation layer, a light modulation layer and a light-emitting device arranged in sequence on the second side of the substrate. At least part of the first light generated by the light-emitting device enters the color modulation layer through the light modulation layer. The color modulation layer is configured to modulate the received first light into second light. Part of the second light transmits through the light-transmitting and reflecting film layer and is emitted towards the first side of the substrate. Part of the second light is reflected by the light-transmitting and reflecting film layer and enters the light modulation layer. The light modulation layer is configured to modulate the received third light of a preset angle and make the third light emitted from the periphery of the light-transmitting and reflecting film layer towards the first side of the substrate. The technical solution of the present disclosure improves the light-emitting uniformity of the sub light-emitting area of the light-emitting module and improves the overall light-emitting uniformity of the light-emitting module.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and more particularly to a light-emitting module and a display device. Background Technology

[0002] Liquid crystal displays (LCDs) employ passive light emission, meaning they require a backlight to emit light. Backlights include direct-lit and edge-lit backlights. The light-emitting devices on the backlight achieve uniform light emission across the entire surface using a light guide plate or diffuser. To meet the demands for high color gamut and thinner devices, quantum dot (QD) backlights can be used. This involves adding a quantum dot protective film to a standard backlight to improve the color gamut. Using QD backlights can increase the color gamut from 70% NTSC to over 110% NTSC; however, the thickness of the quantum dot protective film is typically over 30 μm, increasing the backlight thickness.

[0003] When miniaturized inorganic light-emitting diodes (MiniLEDs) are used for the backlight, not only can a wide color gamut be achieved, but the thickness of the backlight can also be reduced to achieve ultra-thin products. However, while achieving ultra-thin backlights, MiniLEDs also have problems such as low light source utilization and poor light uniformity. Summary of the Invention

[0004] This disclosure provides a light-emitting module and a display device to solve or alleviate one or more technical problems in the prior art.

[0005] As a first aspect of the present disclosure, the present disclosure provides a light-emitting module, including:

[0006] A base having a first side and a second side disposed opposite to each other;

[0007] The transmissive and reflective film layer, located on the second side of the substrate, allows a portion of the received light to pass through and reflects a portion of the received light.

[0008] The color modulation layer is located on the side of the transflective film layer away from the substrate, and the orthographic projection of the color modulation layer on the substrate is located within the orthographic projection of the transflective film layer on the substrate.

[0009] The light modulation layer is located on the side of the color modulation layer that faces away from the substrate;

[0010] The light-emitting device is located on the side of the light modulation layer away from the substrate, and the light-emitting device corresponds to the color modulation layer;

[0011] At least a portion of the first light emitted by the light-emitting device passes through the light modulation layer and enters the color modulation layer. The color modulation layer is configured to modulate the received first light into a second light. A portion of the second light passes through the transflective film layer and is emitted toward the first side of the substrate. A portion of the second light is reflected by the transflective film layer and enters the light modulation layer. The light modulation layer is configured to modulate the received third light at a preset angle so that the third light is emitted from the periphery of the transflective film layer toward the first side of the substrate.

[0012] In some embodiments, the light modulation layer includes a light-collecting structure and a waveguide structure layer. The light-collecting structure is located on the second side of the substrate, and the orthographic projection of the light-collecting structure on the substrate is located outside the orthographic projection of the transflective film layer on the substrate. The waveguide structure layer is located on the side of the light-collecting structure away from the substrate.

[0013] A portion of the second light beam is reflected by the transflective film layer and enters the waveguide structure layer. The waveguide structure layer is configured to transmit the received third light beam to the light-collecting structure. The light-collecting structure is configured to extract the third light beam, which then exits towards the first side of the substrate.

[0014] In some embodiments, the waveguide structure layer includes a first dielectric layer, a waveguide layer, and a second dielectric layer stacked together. The first dielectric layer is closer to the substrate than the second dielectric layer. The refractive index of the first dielectric layer is less than that of the waveguide layer, and the refractive index of the second dielectric layer is less than that of the waveguide layer.

[0015] In some embodiments, the refractive index of the first dielectric layer is in the range of 1.4 to 1.6, the refractive index of the second dielectric layer is in the range of 1.4 to 1.6, and the refractive index of the waveguide layer is in the range of 1.6 to 1.8.

[0016] In some embodiments,

[0017] The material of the first dielectric layer includes silicon nitride, and the thickness of the first dielectric layer is 100 nm to 200 nm; and / or,

[0018] The waveguide layer is made of silicon oxide and has a thickness of 200 nm to 500 nm; and / or,

[0019] The material of the second dielectric layer includes silicon nitride, and the thickness of the second dielectric layer is 50 nm to 100 nm.

[0020] In some embodiments, the light-collecting structure includes a grating structure;

[0021] The second ray is blue light; the period of the grating structure is 160nm–200nm; and the width of the grating structure is 70nm–90nm; and / or,

[0022] The second ray is green light; the grating structure has a period of 180nm–220nm and a width of 90nm–110nm; and / or,

[0023] The second ray is red light, the period of the grating structure is 280nm to 320nm, and the width of the grating structure is 80nm to 100nm.

[0024] In some embodiments, the light-emitting module includes multiple sub-light-emitting regions, each sub-light-emitting region including a light-emitting device. The light modulation layer also includes a barrier structure. The orthographic projection of the barrier structure onto the substrate is located outside the orthographic projection of the light-collecting structure onto the substrate. The barrier structure is inserted into the waveguide structure layer in a direction perpendicular to the substrate to block the transmission of a third light beam toward the adjacent sub-light-emitting region.

[0025] In some embodiments, a groove is formed on the second side of the substrate, a transflective film layer is located on the surface of the groove, and a color modulation layer is located inside the groove.

[0026] In some embodiments, the cross-section of the groove gradually increases from the bottom of the groove toward the top.

[0027] In some embodiments, the depth of the groove is 10 μm to 20 μm.

[0028] In some embodiments, the transflective film layer includes a first metal layer and a second metal layer stacked together. The first metal layer is closer to the substrate than the second metal layer. The material of the first metal layer includes magnesium, and the thickness of the first metal layer is 20 nm to 50 nm. The material of the second metal layer includes silver, and the thickness of the second metal layer is 100 nm to 150 nm.

[0029] In some embodiments, the first light ray is a third-color light ray, and the color modulation layer includes a color conversion layer configured to convert the incident third-color light ray into a second light ray, the color of which is different from the color of the first light ray; and / or,

[0030] The first ray is a third color ray. The color modulation layer includes a light-transmitting material layer. After the first ray passes through the light-transmitting material layer, it becomes the second ray. The color of the second ray is the same as the color of the first ray.

[0031] In some embodiments, the material of the color conversion layer includes quantum dot materials, organic fluorescent materials, or phosphors.

[0032] In some embodiments, the first light is blue light, and the second light is red light or green light.

[0033] In some embodiments, a light-shielding layer is further included, which is located on the side of the light modulation layer away from the substrate. The light-emitting device is located on the side of the light-shielding layer away from the substrate, and the orthographic projection of the light-shielding layer on the substrate is located between the orthographic projections of the adjacent color modulation layers on the substrate.

[0034] As a second aspect of the present disclosure, the present disclosure provides a display device including the light-emitting module of the present disclosure.

[0035] As a third aspect of the present disclosure, the present disclosure provides a display device, including a light-emitting module as described in the present disclosure, and a liquid crystal display panel, wherein the liquid crystal display panel is located on the side of the substrate of the light-emitting module closer to the first side.

[0036] The technical solution of this disclosure reduces the number of second rays directly emitted from the light-emitting side of the color modulation layer, and reflects a portion of the second rays through a reflective film layer to the light modulation layer. The light modulation layer modulates the third rays, causing them to emit from the periphery of the reflective film layer (i.e., the periphery of the color modulation layer) towards the first side of the substrate. Therefore, the light-emitting module of this disclosure reduces the number of rays directly emitted from the light-emitting side of the color modulation layer and increases the number of rays emitted from the periphery of the color modulation layer. For a sub-light-emitting area corresponding to a light-emitting device, it reduces the number of rays in the first area of ​​the sub-light-emitting area and increases the number of rays in the second area of ​​the sub-light-emitting area. This reduces the brightness of the first area of ​​the sub-light-emitting area, increases the brightness of the second area of ​​the sub-light-emitting area, reduces the brightness difference between the first and second areas of the sub-light-emitting area, improves the uniformity of light emission from the sub-light-emitting area, and ultimately improves the overall uniformity of light emission from the light-emitting module.

[0037] The above overview is for illustrative purposes only and is not intended to be limiting in any way. Further aspects, embodiments, and features of this disclosure will become readily apparent from the accompanying drawings and the following detailed description, in addition to the illustrative aspects, embodiments, and features described above. Attached Figure Description

[0038] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments according to this disclosure and should not be construed as limiting the scope of this disclosure.

[0039] Figure 1 This is a schematic diagram of a backlight module structure that uses a blue inorganic light-emitting diode chip in conjunction with a color conversion layer in related technologies.

[0040] Figure 2This is a schematic diagram showing the viewing angle and light intensity ratio of the light-emitting side of the color conversion layer in the technology of using a blue inorganic light-emitting diode chip in conjunction with a color conversion layer.

[0041] Figure 3 This is a schematic diagram of the light emission spectrum of the red color conversion layer made of different materials when using a blue inorganic light-emitting diode chip;

[0042] Figure 4 This is a schematic diagram of the structure of a light-emitting module in one embodiment of the present disclosure;

[0043] Figure 5 for Figure 4 A schematic diagram of the light transmission of the light-emitting module shown;

[0044] Figure 6 This is a schematic diagram of the planar structure of the light-collecting structure in one embodiment;

[0045] Figure 7 This is a schematic diagram of the structure of the light-emitting module in another embodiment of the present disclosure;

[0046] Figure 8 This is a schematic diagram of a light-emitting module after the color modulation layer has been formed, according to an embodiment of the present disclosure.

[0047] Explanation of reference numerals in the attached figures:

[0048] 10. Substrate; 11. Groove; 12. Transmissive / reflective film layer; 13. Color modulation layer; 14. Light modulation layer; 141. First dielectric layer; 142. Second dielectric layer; 143. Waveguide layer; 144. Light extraction structure; 145. Barrier structure; 15. Light shielding layer; 16. Electrode layer; 17. Protective layer; 20. Light-emitting device. Detailed Implementation

[0049] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this disclosure, and different embodiments can be combined arbitrarily without conflict. Therefore, the drawings and description are considered to be exemplary in nature and not restrictive.

[0050] The inorganic light-emitting diode (LED) chip in this disclosure can be an inorganic sub-millimeter light-emitting diode (Mini LED) chip, or an inorganic micro light-emitting diode (Micro LED) chip.

[0051] Compared with traditional LED backlights, inorganic light-emitting diode (LED) chip backlights have the following advantages: (1) Using inorganic LED chip modules can achieve a display effect with no missing primary colors, covering 100% of the BT2020 wide color gamut and producing vibrant colors; (2) Inorganic LED chips can achieve uniform heat dissipation at high brightness (>1000 nits); (3) Using direct-lit backlights with inorganic LED chips can achieve ultra-thin LCD displays, enabling LCD displays to be applied to thin and light portable consumer electronics products, such as augmented reality (AR) / virtual reality (VR) glasses, mobile phones, laptops, etc.; (4) Inorganic LED chips combined with fine local dimming technology can achieve ultra-high contrast.

[0052] Inorganic light-emitting diode (LED) chips have a small structure, which is conducive to achieving a more detailed number of local dimming zones, a higher dynamic range, and a higher contrast ratio. In addition, using inorganic LED chips for backlighting can shorten the optical mixing distance and reduce the thickness of the entire display device, thus achieving ultra-thin products.

[0053] In related technologies, inorganic light-emitting diode (LED) chip backlighting primarily uses blue inorganic LED chips in conjunction with a color conversion layer to achieve colored light output. That is, the blue inorganic LED chip generates blue light, which is then converted into green or red light by the color conversion layer. Among the R, G, and B color inorganic LED chips, the blue inorganic LED chip has the highest efficiency. Therefore, using a blue inorganic LED chip in conjunction with a color conversion layer can result in a backlight module with higher efficiency and lower cost.

[0054] There are some drawbacks to using blue inorganic light-emitting diode chips in conjunction with color conversion layer technology. Figure 1 This is a schematic diagram of a backlight module structure that uses a blue inorganic light-emitting diode chip in conjunction with a color conversion layer in related technologies.

[0055] Figure 2 This is a schematic diagram showing the viewing angle and light intensity ratio of the light-emitting side of the color conversion layer in the technology of using a blue inorganic light-emitting diode chip in conjunction with a color conversion layer. Figure 3 This is a schematic diagram of the light emission spectrum of the red color conversion layer made of different materials when using a blue inorganic light-emitting diode chip.

[0056] like Figure 1As shown, a groove 11 is formed on the second side, i.e., the upper side, of the substrate 10. The groove 11 is filled with a color conversion material to form a color conversion layer 13. An electrode layer 16 is disposed on the second side of the substrate 10. The electrode pins 31 of the blue inorganic light-emitting diode chip 30 located above the substrate 10 are coupled to the electrode layer 16. Blue light emitted by the blue inorganic light-emitting diode chip 30 enters the color conversion layer 13, where it is converted into green or red light and emitted from the first side, i.e., the lower side, of the substrate 10. The area corresponding to the inorganic light-emitting diode chip is a sub-emitting region. The area in the sub-emitting region directly opposite the color conversion layer is the first region, and the area in the sub-emitting region directly opposite the electrode pins is the second region. The color conversion material is a photoluminescent material that absorbs blue light and converts it into light of the corresponding color. Figure 1 As can be seen, the light emitted from the light-emitting side of the substrate 10 is normally distributed. The first region of the sub-light-emitting area has a high average brightness and the second region has a low average brightness, which results in poor overall light uniformity. If a diffuser plate is used, the thickness of the backlight module will be increased.

[0057] To improve the absorption rate of blue light in the color conversion layer, scattering particles are usually added to the color conversion layer. When quantum dot materials are used in the color conversion layer, the quantum dots in the color conversion layer are equivalent to self-luminescence. Each quantum dot core can be regarded as a light-emitting point. This will result in strong light emission at the center of the sub-light emission region and weak light emission at the edge region. This makes the first region of the sub-light emission region where the inorganic light-emitting diode chip is located emit strong light, while the region between two inorganic light-emitting diode chips emits weak light, resulting in poor overall light emission uniformity.

[0058] For any inorganic light-emitting diode (LED) chip, since the electrode leads are typically made of metal, the light emitted from the side where the electrode leads are located is mainly concentrated in the non-electrode lead area of ​​the LED chip, with almost no light emitted from the electrode lead area. Furthermore, the light emitted from the side where the electrode leads are located passes through the color conversion layer... Figure 2 As can be seen, the light intensity is greatest in the direction perpendicular to the substrate 10 and passing through the geometric center of the color conversion layer (i.e., at a viewing angle of 0°). Defining this light intensity as 1, the light intensity at the locations on either side of the color conversion layer, i.e., in the wide viewing angle direction (i.e., at a viewing angle of 60°), is approximately 60% of that at the center. Furthermore, the electrode pins are generally located at the edges of the inorganic light-emitting diode (LED) chips. Therefore, when multiple inorganic LED chips are arranged in an array, the light intensity between adjacent LED chips is relatively weak. Consequently, the overall light emission uniformity of a backlight module including multiple inorganic LED chips arranged in an array is poor.

[0059] like Figure 3 As shown, Figure 3The image shows the emission spectra of the red color conversion layer when the color conversion layer materials are QDye PR (organic fluorescent material), QDPR-CdSe (cadmium selenide quantum dot material), phosphor, and QDPR-InP (indium phosphide quantum dot material), respectively. Figure 2 As can be seen, the conversion rate of the color conversion layer material for blue light cannot reach 100%. To achieve a 100% conversion rate for blue light, the thickness of the color conversion layer needs to be increased. Experiments have shown that when the thickness of the color conversion layer is greater than 20μm, the absorption rate of blue light can reach over 99%, but this results in a larger backlight module thickness, which is not conducive to achieving ultra-thin products.

[0060] To address some problems in related technologies, this disclosure provides a light-emitting module.

[0061] Figure 4 This is a schematic diagram of the structure of a light-emitting module in one embodiment of the present disclosure. Figure 5 for Figure 4 A schematic diagram of the light transmission of the light-emitting module shown. Figure 4 As shown, the light-emitting module includes a substrate 10, a transflective film layer 12, a color modulation layer 13, a light modulation layer 14, and a light-emitting device 20.

[0062] like Figure 4 As shown, the substrate 10 has a first side and a second side disposed opposite to each other. Figure 4 In the diagram, the first side is the lower side of the substrate 10, and the second side is the upper side of the substrate 10. The transflective coating layer 12 is located on the second side of the substrate 10. The transflective coating layer 12 allows a portion of the received light to pass through and reflects a portion of the received light; therefore, the transflective coating layer 12 has the function of both transmitting and reflecting light. The color modulation layer 13 is located on the side of the transflective coating layer 12 facing away from the substrate 10, and the orthographic projection of the color modulation layer 13 onto the substrate 10 lies within the orthographic projection of the transflective coating layer 12 onto the substrate 10.

[0063] The light modulation layer 14 is located on the side of the color modulation layer 13 that is away from the substrate 10. The light-emitting device 20 is located on the side of the light modulation layer 14 that is away from the substrate 10, and the light-emitting device 20 corresponds to the color modulation layer 13.

[0064] like Figure 4 and Figure 5As shown, at least a portion of the first light emitted by the light-emitting device 20 passes through the light modulation layer 14 and enters the color modulation layer 13. The color modulation layer 13 is configured to modulate the received first light into a second light. A portion of the second light passes through the reflective film layer 12 and exits towards the first side of the substrate 10. A portion of the second light is reflected by the reflective film layer 12 and enters the light modulation layer 14. The light modulation layer 14 is configured to modulate the received third light at a preset angle so that the third light exits from the periphery of the reflective film layer 12 towards the first side of the substrate 10.

[0065] It should be noted that the third ray is a part of the second ray reflected by the transflective film layer 12. The ray in the second ray that is reflected by the transflective film layer 12 and enters the light modulation layer 14 at a preset angle is the third ray.

[0066] It is understood that in the light-emitting module, the first side of the substrate 10 is the light-emitting side of the light-emitting module. The light-emitting module may include multiple sub-light-emitting regions, each sub-light-emitting region including a light-emitting device 20, a transflective film layer 12, a color modulation layer 13, and a light modulation layer 14. The light-emitting device 20, the transflective film layer 12, and the color modulation layer 13 can correspond one-to-one, and the light modulation layer 14 can correspond to the color modulation layer 13. Exemplarily, the light modulation layer 14 can be located on the entire substrate 10; or, the light modulation layer 14 can also be located in the sub-light-emitting regions, with each sub-light-emitting region including a corresponding light modulation layer 14.

[0067] In the sub-light-emitting region, the region corresponding to the color modulation layer is the first region, and the region corresponding to the electrode pins of the light-emitting device 20 is the second region. It can be understood that there is no strict boundary between the first and second regions of the sub-light-emitting region; the region located at the center of the sub-light-emitting region can be considered the first region, and the area surrounding the first region can be considered the second region.

[0068] In the light-emitting module of this embodiment, at least a portion of the first light emitted by the light-emitting device 20 can pass through the light modulation layer 14 and enter the color modulation layer 13. The color modulation layer 13 can modulate the received first light into a second light. Under the action of the transflective film layer 12, a portion of the second light passes through the transflective film layer 12 and is emitted from the first side (lower side) of the substrate 10. A portion of the second light is reflected by the transflective film layer 12 and then enters the light modulation layer 14. The third light is light whose incident angle into the light modulation layer 14 satisfies a preset angle. After being reflected by the transflective film layer 12 and entering the light modulation layer 14, the third light is modulated by the light modulation layer 14 and emitted from the periphery of the transflective film layer 12 toward the first side (lower side) of the substrate 10.

[0069] In related technologies, such as Figure 1As shown, after the first light emitted by the inorganic light-emitting diode chip enters the color conversion layer, the color conversion layer converts the light into a second light of the corresponding color. The second light is emitted from the first side, i.e. the lower side, of the substrate 10. On the light-emitting side, the average brightness of the first region of the sub-light-emitting area where the inorganic light-emitting diode chip is located is high, and the average brightness of the second region is low, resulting in weaker light between adjacent inorganic light-emitting diode chips, which makes the overall light emission uniformity of the backlight module poor.

[0070] In the light-emitting module of this embodiment, under the action of the transflective film layer 12, a portion of the second light beam passes through the transflective film layer 12 and is directly emitted from the first side of the substrate 10. Another portion of the second light beam is reflected by the transflective film layer 12 and enters the light modulation layer 14. The third light beam entering the light modulation layer 14 is modulated by the light modulation layer 14 and then emitted from the periphery of the transflective film layer 12 toward the first side of the substrate 10. It can be understood that a portion of the second light beam passes through the transflective film layer 12 and is emitted from the first side of the substrate 10; that is, a portion of the second light beam passes through the transflective film layer 12 and is directly emitted from the light-emitting side of the color modulation layer 13.

[0071] The light-emitting module of this embodiment can reduce the amount of second light emitted directly from the light-emitting side of the color modulation layer 13, and reflect a portion of the second light through the reflective film layer 12 to the light modulation layer 14. The light modulation layer 14 modulates the third light so that the third light is emitted from the periphery of the reflective film layer 12 (i.e., the periphery of the color modulation layer 13) toward the first side of the substrate 10. Thus, the light-emitting module of this embodiment reduces the amount of light emitted directly from the light-emitting side of the color modulation layer 13 and increases the amount of light emitted from the periphery of the color modulation layer 13. For a sub-light-emitting area corresponding to a light-emitting device 20, it reduces the amount of light in the first area of ​​the sub-light-emitting area and increases the amount of light in the second area of ​​the sub-light-emitting area. Consequently, it reduces the light output brightness of the first area of ​​the sub-light-emitting area and increases the light output brightness of the second area of ​​the sub-light-emitting area, reduces the brightness difference between the first and second areas of the sub-light-emitting area, improves the light output uniformity of the sub-light-emitting area, and thus improves the overall light output uniformity of the light-emitting module.

[0072] For example, the substrate 10 may be made of glass. The light-emitting device 20 may be an inorganic light-emitting diode chip.

[0073] In one embodiment, such as Figure 4As shown, the light modulation layer 14 may include a light-collecting structure 144 and a waveguide structure layer. The light-collecting structure 144 may be located on the second side of the substrate 10, and the orthogonal projection of the light-collecting structure 144 on the substrate 10 is located outside the orthogonal projection of the transflective coating layer 12 on the substrate 10. That is, the orthogonal projection of the light-collecting structure 144 on the substrate 10 is located outside the orthogonal projection of the transflective coating layer 12 on the substrate 10. The waveguide structure layer is located on the side of the light-collecting structure 144 opposite to the substrate 10.

[0074] A portion of the second light beam is reflected by the transflective film layer 12 and enters the waveguide structure layer. The waveguide structure layer is configured to transmit the received third light beam to the light-collecting structure 144. The light-collecting structure 144 is configured to extract the third light beam, which then emits towards the first side of the substrate 10.

[0075] In this embodiment, the waveguide structure layer allows the third light beam to be transmitted within the waveguide structure layer, avoiding light loss. The orthogonal projection of the light-collecting structure 144 onto the substrate 10 is set to be located outside the orthogonal projection of the transflective film layer 12 onto the substrate 10. Thus, when the third light beam is transmitted to the light-collecting structure 144, the light-collecting structure 144 can extract the third light beam. The light beam extracted by the light-collecting structure 144 can be emitted from the periphery of the transflective film layer 12 toward the first side of the substrate 10, thereby increasing the light output brightness of the periphery of the transflective film layer 12 and reducing the brightness difference between the first and second sub-light-emitting regions, which is beneficial to improving the uniformity of the overall light output of the light-emitting module.

[0076] In one embodiment, such as Figure 4 As shown, the waveguide structure layer may include a first dielectric layer 141, a waveguide layer 143, and a second dielectric layer 142 stacked together. The first dielectric layer 141 is closer to the substrate 10 than the second dielectric layer 142. The refractive index of the first dielectric layer 141 is less than that of the waveguide layer 143, and the refractive index of the second dielectric layer 142 is less than that of the waveguide layer 143.

[0077] In this waveguide structure, the refractive indices of the first dielectric layer 141 and the second dielectric layer 142 are both lower than the refractive index of the waveguide layer 143. After the third light enters the waveguide layer 143, the third light can undergo total internal reflection at the interface between the waveguide layer 143 and the first dielectric layer 141, and at the interface between the waveguide layer 143 and the second dielectric layer 142. Thus, the third light can be transmitted through total internal reflection in the waveguide layer 143, avoiding the loss of the third light, improving the intensity of the light extracted by the light-collecting structure 144, and further improving the brightness of the second region of the light-emitting device 20.

[0078] For example, when the incident angle of light entering the waveguide structure layer is θ, the light can undergo total internal reflection in the waveguide layer 143. The preset angle can be greater than or equal to θ. The third ray can be understood as a ray entering the waveguide structure layer with an incident angle greater than or equal to θ. Therefore, after the third ray enters the waveguide structure layer, it can undergo total internal reflection in the waveguide layer 143.

[0079] For example, the refractive index of the first dielectric layer 141 can be in the range of 1.4 to 1.6. For instance, the refractive index of the first dielectric layer 141 can be 1.4, 1.5, or 1.6.

[0080] For example, the refractive index of the second dielectric layer 142 can be in the range of 1.4 to 1.6. For instance, the refractive index of the second dielectric layer 142 can be 1.4, 1.5, or 1.6.

[0081] For example, the refractive index of waveguide layer 143 can be in the range of 1.6 to 1.8. For instance, the refractive index of waveguide layer 143 can be 1.6, 1.7, or 1.8.

[0082] Here, the refractive indices of the first dielectric layer 141, waveguide layer 143, and second dielectric layer 142 are not specifically limited. As long as the refractive index of the first dielectric layer 141 is less than the refractive index of the waveguide layer 143, and the refractive index of the second dielectric layer 142 is less than the refractive index of the waveguide layer 143, the effect of the waveguide structure layer in this embodiment can be achieved.

[0083] For example, the material of the first dielectric layer 141 may include silicon nitride. The thickness of the first dielectric layer 141 may be 100 nm to 200 nm. For example, the thickness of the first dielectric layer 141 may be 100 nm, 150 nm or 200 nm.

[0084] For example, the waveguide layer 143 is made of silicon oxide. The thickness of the waveguide layer 143 can be 200 nm to 500 nm. For example, the thickness of the waveguide layer 143 can be 200 nm, 300 nm, 400 nm or 500 nm.

[0085] For example, the material of the second dielectric layer 142 includes silicon nitride. The thickness of the second dielectric layer 142 can be 50 nm to 100 nm. For example, the thickness of the second dielectric layer 142 can be 50 nm, 80 nm, or 100 nm.

[0086] In one embodiment, the light-collecting structure 144 may include a third dielectric layer, the refractive index of which is greater than that of the waveguide layer 143. The orthographic projection of the third dielectric layer onto the substrate 10 lies outside the orthographic projection of the transflective coating layer 12 onto the substrate 10. The waveguide layer 143 overlaps with the surface of the third dielectric layer on the side away from the substrate 10. Because the refractive index of the third dielectric layer is greater than that of the waveguide layer 143, when the third light ray is transmitted from the waveguide layer 143 to the third dielectric layer, the third light ray will exit from the waveguide layer 143 to the third dielectric layer and exit from the first side of the substrate 10, thereby the third dielectric layer extracts the third light ray from the waveguide layer 143.

[0087] For example, the dimensions of the light-collecting structure 144 in the first direction can be the same as the dimensions of the first dielectric layer 141 in the first direction, that is, the thickness of the light-collecting structure 144 can be the same as the thickness of the first dielectric layer 141. The first direction is perpendicular to the substrate 10. At the location of the light-collecting structure 144, the waveguide layer 143 overlaps with the surface of the light-collecting structure 144 away from the substrate 10. At the location outside the light-collecting structure 144, the waveguide layer 143 overlaps with the surface of the first dielectric layer 141 away from the substrate 10. Thus, within the area enclosed by the light-collecting structure 144, the third light ray can be transmitted in the waveguide layer 143 by total internal reflection. When the third light ray is transmitted to the location of the light-collecting structure 144, the light-collecting structure 144 extracts the third light ray, and the third light ray exits from the first side of the substrate 10.

[0088] The light-emitting module may include multiple sub-light-emitting areas, and each sub-light-emitting area may include a light-emitting device 20, with the light-emitting device 20 corresponding to the sub-light-emitting area. The colors of the light emitted by adjacent sub-light-emitting areas may be different.

[0089] In one embodiment, the light-collecting structure 144 may include a grating structure. By using a grating structure to collect light, collimated light can be extracted, so that the extracted third light is emitted from the first side of the substrate 10 in a direction perpendicular to the substrate 10, thus avoiding crosstalk between different colors of light between adjacent sub-light-emitting regions.

[0090] Figure 6 This is a schematic diagram of the planar structure of the light-collecting structure in one embodiment. For example... Figure 6 As shown, the orthographic projection of the light-collecting structure 144 onto the substrate 10 is located outside the orthographic projection of the transmissive and reflective film layer 12 onto the substrate 10. The light-collecting structure 144 includes a grating structure with a period of P and a width of W.

[0091] When the second light source is blue light, the period P of the grating structure is 160nm–200nm, and the width W of the grating structure is 70nm–90nm. For example, the period P of the grating structure can be 160nm, 180nm, or 200nm, and the width W of the grating structure can be 70nm, 80nm, or 90nm. Such a grating structure can extract blue light from the waveguide structure layer without extracting red and green light, avoiding interference from other colors of light to the blue sub-emitting region and improving color vibrancy.

[0092] When the second light source is green, the period P of the grating structure is 180nm–220nm, and the width W of the grating structure is 90nm–110nm. For example, the period P of the grating structure can be 180nm, 200nm, or 220nm, and the width W of the grating structure can be 90nm, 100nm, or 110nm. Such a grating structure can extract the green light from the waveguide structure layer without extracting the red and blue light, avoiding interference from other colors of light on the green sub-emitting region and improving color vibrancy.

[0093] When the second light source is red light, the period P of the grating structure is 280nm–320nm, and the width W of the grating structure is 80nm–100nm. For example, the period P of the grating structure can be 280nm, 300nm, or 320nm, and the width W of the grating structure can be 80nm, 90nm, or 100nm. Such a grating structure can extract red light from the waveguide structure layer without extracting green and blue light, avoiding interference from other colors of light on the red sub-emitting region and improving color vibrancy.

[0094] By setting the period and width of the grating structure according to the color of the second light, the light-collecting structure 144 can extract the second light of the corresponding color without extracting light of other colors, thus avoiding interference from other colored optical fibers on the second light and improving color vibrancy.

[0095] The material of the grating structure can include silver or silicon.

[0096] For example, the light-emitting module may include a red sub-light-emitting region, a green sub-light-emitting region, and a blue sub-light-emitting region. The period and width of the grating structure in the light-collecting structure 144 can be set according to the color of the sub-light-emitting region, so that the light-collecting structure 144 can extract light of the corresponding color. For example, the light-collecting structure 144 in the red sub-light-emitting region can extract red light transmitted in the waveguide structure layer; the light-collecting structure 144 in the green sub-light-emitting region can extract green light transmitted in the waveguide structure layer; and the light-collecting structure 144 in the blue sub-light-emitting region can extract blue light transmitted in the waveguide structure layer.

[0097] like Figure 5 As shown, Figure 5 The central area is a green sub-luminescent region, the left side is a red sub-luminescent region, and the right side is a blue sub-luminescent region. From... Figure 5 It can be seen that although a small amount of red light in waveguide layer 143 is transmitted to the green sub-emitting region, the light-collecting structure of the green sub-emitting region does not extract the red light, thus avoiding interference from the red light to the green sub-emitting region. Figure 5 It can be seen that for the red and green sub-emitting regions, the blue light emitted by the light-emitting device at a relatively large angle may directly enter the waveguide layer and undergo total internal reflection transmission within the waveguide layer. Since the light-collecting structures in the red and green sub-emitting regions do not extract the blue light, the blue light does not affect the light output performance of the red and green sub-emitting regions.

[0098] Figure 7 This is a schematic diagram of the structure of a light-emitting module according to another embodiment of the present disclosure. In another embodiment, as... Figure 7 As shown, the light modulation layer 14 may further include a barrier structure 145, the orthographic projection of which on the substrate 10 surrounds the orthographic projection of the light-collecting structure 144 on the substrate 10. The barrier structure 145 is inserted in the waveguide structure layer in a direction perpendicular to the substrate 10 to block the transmission of the third light beam toward adjacent sub-emitting regions. By setting the barrier structure 145, the third light beam can be confined to the corresponding sub-emitting region, preventing the third light beam from entering adjacent sub-emitting regions and causing light crosstalk.

[0099] For example, in the waveguide structure layer, the third light ray is transmitted in the waveguide layer 143, and the barrier structure 145 is inserted in the waveguide layer 143 in a direction perpendicular to the substrate 10.

[0100] For example, the barrier structure 145 can be disposed on the second side surface of the substrate 10, and the height of the barrier structure 145 can be greater than the thickness of the first dielectric layer 141, so that the barrier structure 145 can be inserted in the waveguide layer 143 in a direction perpendicular to the substrate 10.

[0101] For example, the barrier structure 145 can be disposed on the surface of the first dielectric layer 141 on the side away from the substrate 10, thus enabling the barrier structure 145 to be inserted into the waveguide layer 143 in a direction perpendicular to the substrate 10. The height of the barrier structure 145 can be less than or equal to the thickness of the waveguide layer 143, or the height of the barrier structure 145 can be greater than the thickness of the waveguide layer 143 and less than the sum of the thicknesses of the waveguide layer 143 and the second dielectric layer 142.

[0102] The retaining wall structure 145 may be made of black resin. The width of the retaining wall structure 145 can be set as needed.

[0103] In one embodiment, the transflective film layer 12 may include a first metal layer and a second metal layer stacked together, with the first metal layer being closer to the substrate 10 relative to the second metal layer.

[0104] The first metal layer may be made of magnesium, and its thickness may be 20 nm to 50 nm. For example, the thickness of the first metal layer may be 20 nm, 30 nm, 40 nm, or 50 nm. The second metal layer may be made of silver, and its thickness may be 100 nm to 150 nm. For example, the thickness of the second metal layer may be 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, or 150 nm.

[0105] This transflective coating 12 can function as a semi-transparent, semi-reflective layer. The transmittance of the transflective coating 12 is approximately 50%, meaning that about 50% of the second light rays can pass through the transflective coating 12 and exit towards the first side of the substrate 10. It should be noted that the transmittance and reflectance of the transflective coating 12 can be adjusted by changing the thickness of the first and second metal layers.

[0106] In one embodiment, such as Figure 4 As shown, a groove 11 can be formed on the second side of the substrate 10, and the transflective film layer 12 is located on the surface of the groove 11. The color modulation layer 13 is located inside the groove 11. This structure can reduce the thickness of the light-emitting module, which is beneficial for achieving ultra-thin products.

[0107] For example, the transflective film layer 12 is located on the bottom and sidewall surfaces of the groove 11, and the color modulation layer 13 is located inside the groove 11. The upper surface of the color modulation layer 13 can be flush with the second side surface of the substrate 10. Thus, the transflective film layer 12 and the color modulation layer 13 do not increase the thickness of the light-emitting module.

[0108] like Figure 4 As shown, the cross-section of the groove 11 gradually increases from the bottom to the top. This groove 11 is an open groove 11, and a portion of the second light modulated by the color modulation layer 13 can be emitted through the transflective film layer 12 through the sidewall of the groove 11, thereby increasing the brightness of the second region of the sub-light-emitting area and improving the uniformity of light emission from the light-emitting module.

[0109] In addition, setting the cross-section of the groove 11 to gradually increase from the bottom to the top of the groove 11 is beneficial to increasing the number of third rays in the reflected light of the transflective film layer 12. As a result, more third rays are emitted from the first side of the substrate 10 at the periphery of the transflective film layer 12, which improves the brightness of the second region of the sub-light-emitting region.

[0110] For example, the shape of the groove 11 can be a regular trapezoid, such as... Figure 4As shown. In other embodiments, the groove 11 may be curved.

[0111] The depth of the groove 11 can be 10μm to 20μm, for example, the depth of the groove 11 can be 10μm, 15μm or 20μm. With this depth of groove 11, after the color modulation layer 13 is formed in the groove 11, the thickness of the color modulation layer 13 is about 10μm to 20μm. The color modulation layer 13 of this thickness has a relatively high conversion rate of converting the first light into the second light, making full use of the first light and improving the brightness of the light-emitting module.

[0112] The first ray can be a third color ray. The third color ray can be blue ray. The color modulation layer 13 can include a color conversion layer. The color conversion layer is configured to convert the incident third color ray into a second ray, the color of which is different from the color of the first ray.

[0113] For example, the second ray can be green light. The color modulation layer 13 can be a green color conversion layer, which can convert blue light into green light.

[0114] For example, the second ray can be red light. The color modulation layer 13 can be a red color conversion layer, which can convert blue light into red light.

[0115] For example, the color of the second light can be the same as the color of the first light. The color modulation layer 13 may include a light-transmitting material layer. The first light passes through the light-transmitting material layer and becomes the second light. The material of the light-transmitting material layer may include organic materials with good light transmittance, such as photoresist.

[0116] To achieve the color conversion of light, the color conversion layer can be made of quantum dot materials. Quantum dot materials can include perovskite quantum dot materials, cadmium selenide quantum dot materials, or indium phosphide quantum dot materials. When the color conversion layer includes quantum dot materials, the light-emitting module can also include an encapsulation layer located between the color conversion layer and the light modulation layer 14. The encapsulation layer can cover the color conversion layer, providing encapsulation and protection to prevent water and oxygen from corroding the quantum dot materials.

[0117] The color conversion layer can be made of organic fluorescent materials or phosphors. Other color conversion materials that can convert the first light ray into the second light ray can also be used.

[0118] For example, such as Figure 4As shown, the color modulation layer 13 may include a red color conversion layer 13a, a green color conversion layer 13b, and a light-transmitting material layer 13c. The red color conversion layer 13a replaces the blue light emitted by the light-emitting device 20 with red light, the green color conversion layer 13b replaces the blue light emitted by the light-emitting device 20 with green light, and the blue light remains blue light after passing through the light-transmitting material layer 13c.

[0119] In one embodiment, the color modulation layer 13 is provided with scattering particles. The scattering particles in the color conversion layer can increase the propagation path of blue light within the color conversion layer, thereby improving the conversion efficiency of the color conversion layer for blue light. The scattering particles in the light-transmitting material layer can disperse the blue light incident on the light-transmitting material layer, preventing the blue light from exiting vertically from the light-transmitting material layer and increasing the number of third rays.

[0120] In addition, scattering particles are provided in the color modulation layer 13. The second light modulated by the color modulation layer 13 can generate scattered light under the scattering effect of the scattering particles, such as... Figure 5 As shown, the third ray in the scattered light that meets the preset angle can directly enter the light modulation layer 14, which further increases the number of third rays entering the light modulation layer, improves the brightness of the second region of the sub-light emission area, and can better improve the light emission uniformity of the light emission module.

[0121] The material of the scattering particles can include silicon oxide, such as silicon dioxide. The particle size of the scattering particles can be 300 nm to 500 nm.

[0122] In one embodiment, such as Figure 4 and Figure 7 As shown, the light-emitting module may further include a light-shielding layer 15, which is located on the side of the light modulation layer 14 facing away from the substrate 10, and the light-emitting device 20 is located on the side of the light-shielding layer 15 facing away from the substrate 10. The orthographic projection of the light-shielding layer 15 onto the substrate 10 lies between the orthographic projections of adjacent color modulation layers 13 onto the substrate 10. By setting the orthographic projection of the light-shielding layer 15 onto the substrate 10 to lie between the orthographic projections of adjacent color modulation layers 13 onto the substrate 10, large-angle light generated by the light-emitting device 20 will not enter the color modulation layers 13 in adjacent sub-light-emitting regions under the protection of the light-shielding layer 15, thus avoiding color cross-contamination between adjacent sub-light-emitting regions. The material of the light-shielding layer 15 may be black resin.

[0123] like Figure 4As shown, the light-emitting module may further include an electrode layer 16, which includes a first electrode and a second electrode, respectively connected to the electrode pins of the light-emitting device 20. For example, the electrode layer 16 may be located on the side of the light-shielding layer 15 facing away from the substrate 10. When the light-emitting device 20 uses an inorganic light-emitting diode chip, the anode pin and cathode pin of the inorganic light-emitting diode chip are coupled to the first electrode and the second electrode, respectively. The material of the electrode layer 16 may include copper.

[0124] like Figure 4 As shown, the light-emitting module may further include a protective layer 17, which is located on the side of the light-emitting device 20 facing away from the substrate 10. The protective layer 17 can cover the light-emitting device 20 and protect it. For example, the material of the protective layer 17 may include white ink.

[0125] The following is through Figure 7 The fabrication process of the light-emitting module shown further illustrates the technical solution of the embodiments of this disclosure. Figure 7 The light-emitting module shown may include a red sub-light-emitting region, a green sub-light-emitting region, and a blue sub-light-emitting region. It is understood that the term "patterning" as used in this paper, when the patterning material is inorganic or metallic, includes processes such as photoresist coating, mask exposure, development, etching, and photoresist stripping; when the patterning material is organic, it includes processes such as mask exposure and development. Evaporation, deposition, coating, and plating mentioned in this paper are all mature fabrication processes in related technologies.

[0126] A groove 11 is formed on the second side of the substrate 10 using an etching process. The depth of the groove 11 is 10μm to 20μm. Figure 8 As shown, Figure 8 This is a schematic diagram of a light-emitting module after the color modulation layer has been formed according to an embodiment of the present disclosure. Exemplarily, three grooves 11 can be formed, and the three grooves 11 can be located in the red sub-light-emitting region, the green sub-light-emitting region, and the blue sub-light-emitting region, respectively.

[0127] A reflective film is deposited on the surface of the groove 11 using magnetron sputtering; the reflective film outside the groove 11 is removed by etching, and the reflective film on the surface of the groove 11 forms a reflective film layer 12, such as... Figure 8 As shown.

[0128] A color modulation layer 13 is formed on the surface of the translucent-reflective film within the groove 11 using a patterning process or inkjet printing, such as... Figure 8As shown, a red color conversion layer 13a is formed in the groove 11 of the red sub-emitting region, a green color conversion layer 13b is formed in the groove 11 of the green sub-emitting region, and a light-transmitting material layer 13c is formed in the groove 11 of the blue sub-emitting region. When quantum dot material is used for the color conversion layer, an encapsulation layer is formed on the color modulation layer 13. The encapsulation layer can cover the color conversion layer and provides encapsulation and protection for the color conversion layer, preventing water and oxygen from corroding the quantum dot material.

[0129] A grating structure is formed on the first side of the substrate 10 using nanoimprinting and etching processes. The grating structure is arranged around the groove 11, such as... Figure 7 As shown. In the blue sub-emitting region, the period P of the grating structure is 160nm–200nm, and the width W of the grating structure is 70nm–90nm. In the green sub-emitting region, the period P of the grating structure is 180nm–220nm, and the width W of the grating structure is 90nm–110nm. In the red sub-emitting region, the period P of the grating structure is 280nm–320nm, and the width W of the grating structure is 80nm–100nm.

[0130] A retaining wall structure is formed on the first side of the substrate 10. The retaining wall structure is arranged around the grating structure, and the height of the retaining wall structure is greater than the height of the grating structure. Figure 7 As shown.

[0131] A first dielectric layer 141 is formed on the first side of the substrate 10, which has a grating structure and a barrier structure, such as... Figure 7 As shown. The thickness of the first dielectric layer 141 can range from 100 nm to 200 nm. The thickness of the first dielectric layer 141 can be the same as the thickness of the grating structure. The material of the first dielectric layer 141 can include silicon nitride.

[0132] A waveguide layer 143 is formed on the side of the first dielectric layer 141 facing away from the substrate 10, such as... Figure 7 As shown. The waveguide layer 143 is made of silicon oxide. The thickness of the waveguide layer 143 can be 200 nm to 500 nm. A barrier structure is inserted in the waveguide structure layer in a direction perpendicular to the substrate 10.

[0133] A second dielectric layer 142 is formed on the side of the waveguide layer 143 facing away from the substrate 10, such as Figure 7 As shown. The material of the second dielectric layer 142 includes silicon nitride. The thickness of the second dielectric layer 142 can be 50 nm to 100 nm.

[0134] A light-shielding layer 15 is formed on the side of the second dielectric layer 142 that is away from the substrate 10.

[0135] An electrode layer 16 is formed on the side of the light-shielding layer 15 facing away from the substrate 10. An inorganic light-emitting diode chip is coupled to the corresponding electrode in the electrode layer 16.

[0136] A white ink layer is formed on the inorganic light-emitting diode chip, and the white ink layer serves as a protective layer 17 to protect the inorganic light-emitting diode chip.

[0137] In order to reduce the thickness of the light-emitting module, the substrate 10 is thinned by mechanical grinding or chemical polishing on the first side, thereby reducing the thickness of the substrate 10 and thus reducing the thickness of the light-emitting module.

[0138] This disclosure also provides a display device, including the light-emitting module in any embodiment of this disclosure.

[0139] This disclosure also provides a display device, including a light-emitting module as described in any embodiment of this disclosure, and a liquid crystal display panel. The liquid crystal display panel is located on the side of the substrate 10 in the light-emitting module closer to the first side.

[0140] The light-emitting module in this embodiment can be assembled in a display device as a display panel, or it can be assembled in a display device as a light source. The display device can be any product or component with display function, such as electronic paper, mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, navigator, wearable display device, etc.

[0141] The light-emitting module in this embodiment can also be used as a light source in lighting products.

[0142] In this article, the thickness or height of A should be understood as the dimension of A in the direction perpendicular to the base.

[0143] In the description of this specification, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0144] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this disclosure, "multiple" means two or more, unless otherwise explicitly specified.

[0145] In this disclosure, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0146] In this disclosure, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0147] The foregoing disclosure provides many different implementations or examples for carrying out different structures of this disclosure. To simplify this disclosure, the components and arrangements of specific examples are described above. Of course, these are merely examples and are not intended to limit this disclosure. Furthermore, reference numerals and / or reference letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.

[0148] The above are merely specific embodiments of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any person skilled in the art can easily conceive of various variations or substitutions within the technical scope disclosed in this disclosure, and these should all be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A light-emitting module, characterized in that, include: A substrate having a first side and a second side disposed opposite to each other; A transmissive and reflective film layer is located on the second side of the substrate. The transmissive and reflective film layer allows a portion of the received light to pass through and reflects a portion of the received light. A color modulation layer is located on the side of the transflective film layer opposite to the substrate, and the orthographic projection of the color modulation layer on the substrate is located within the orthographic projection of the transflective film layer on the substrate; A light modulation layer is located on the side of the color modulation layer opposite to the substrate; A light-emitting device is located on the side of the light modulation layer opposite to the substrate, and the light-emitting device corresponds to the color modulation layer; At least a portion of the first light emitted by the light-emitting device passes through the light modulation layer and enters the color modulation layer. The color modulation layer is configured to modulate the received first light into a second light. A portion of the second light passes through the reflective film layer and is emitted toward a first side of the substrate. A portion of the second light is reflected by the reflective film layer and enters the light modulation layer. The light modulation layer is configured to modulate the received third light at a preset angle so that the third light is emitted from the periphery of the reflective film layer toward a first side of the substrate. The light modulation layer includes a light-collecting structure and a waveguide structure layer. The light-collecting structure is located on the second side of the substrate. The orthographic projection of the light-collecting structure on the substrate is located outside the orthographic projection of the transflective film layer on the substrate. The waveguide structure layer is located on the side of the light-collecting structure away from the substrate. A portion of the second light beam is reflected by the transflective film layer and enters the waveguide structure layer. The waveguide structure layer is configured to transmit the received third light beam to the light-collecting structure. The light-collecting structure is configured to extract the third light beam, which is emitted toward the first side of the substrate.

2. The light-emitting module according to claim 1, characterized in that, The waveguide structure layer includes a first dielectric layer, a waveguide layer, and a second dielectric layer stacked together. The first dielectric layer is closer to the substrate than the second dielectric layer. The refractive index of the first dielectric layer is less than that of the waveguide layer, and the refractive index of the second dielectric layer is less than that of the waveguide layer.

3. The light-emitting module according to claim 2, characterized in that, The refractive index of the first dielectric layer is in the range of 1.4 to 1.6, the refractive index of the second dielectric layer is in the range of 1.4 to 1.6, and the refractive index of the waveguide layer is in the range of 1.6 to 1.

8.

4. The light-emitting module according to claim 3, characterized in that, The material of the first dielectric layer includes silicon nitride, and the thickness of the first dielectric layer is 100 nm to 200 nm; and / or, The waveguide layer is made of silicon oxide, and the waveguide layer has a thickness of 200 nm to 500 nm; and / or, The material of the second dielectric layer includes silicon nitride, and the thickness of the second dielectric layer is 50nm~100nm.

5. The light-emitting module according to claim 1, characterized in that, The light-collecting structure includes a grating structure; The second ray is blue light, the period of the grating structure is 160nm~200nm, and the width of the grating structure is 70nm~90nm; and / or, The second ray is green light; the period of the grating structure is 180nm~220nm; and the width of the grating structure is 90nm~110nm; and / or, The second light is red light, the period of the grating structure is 280nm~320nm, and the width of the grating structure is 80nm~100nm.

6. The light-emitting module according to claim 1, characterized in that, The light-emitting module includes multiple sub-light-emitting regions, each sub-light-emitting region including the light-emitting device. The light modulation layer also includes a barrier structure. The orthographic projection of the barrier structure on the substrate is located outside the orthographic projection of the light-collecting structure on the substrate. The barrier structure is inserted in the waveguide structure layer in a direction perpendicular to the substrate to block the transmission of the third light beam toward the adjacent sub-light-emitting region.

7. The light-emitting module according to claim 1, characterized in that, A groove is formed on the second side of the substrate, the transflective film layer is located on the surface of the groove, and the color modulation layer is located inside the groove.

8. The light-emitting module according to claim 7, characterized in that, The cross-section of the groove gradually increases from the bottom to the top.

9. The light-emitting module according to claim 7, characterized in that, The depth of the groove is 10μm~20μm.

10. The light-emitting module according to claim 1, characterized in that, The transflective coating layer includes a first metal layer and a second metal layer stacked together. The first metal layer is closer to the substrate than the second metal layer. The first metal layer is made of magnesium and has a thickness of 20 nm to 50 nm. The second metal layer is made of silver and has a thickness of 100 nm to 150 nm.

11. The light-emitting module according to claim 1, characterized in that, The first ray is a third-color ray, and the color modulation layer includes a color conversion layer configured to convert the incident third-color ray into the second ray, the color of which is different from the color of the first ray; and / or, The first light is a third color light, and the color modulation layer includes a light-transmitting material layer. After the first light passes through the light-transmitting material layer, it becomes the second light, and the color of the second light is the same as the color of the first light.

12. The light-emitting module according to claim 11, characterized in that, The color conversion layer is made of quantum dot materials, organic fluorescent materials, or phosphors.

13. The light-emitting module according to claim 11, characterized in that, The first ray is blue light, and the second ray is either red or green light.

14. The light-emitting module according to claim 1, characterized in that, It also includes a light-shielding layer located on the side of the light modulation layer opposite to the substrate, the light-emitting device located on the side of the light-shielding layer opposite to the substrate, and the orthographic projection of the light-shielding layer on the substrate located between the orthographic projections of the adjacent color modulation layers on the substrate.

15. A display device, characterized in that, Includes the light-emitting module according to any one of claims 1-14.

16. A display device, characterized in that, The light-emitting module includes any one of claims 1-14, and further includes a liquid crystal display panel, wherein the liquid crystal display panel is located on the side of the substrate of the light-emitting module closer to the first side.

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