Semiconductor manufacturing apparatus

Abstract

The present invention relates to a semiconductor manufacturing apparatus that selectively ejects a bonding material from a plurality of nozzles. A semiconductor manufacturing apparatus (100) is provided with a coating unit (20) and a single syringe (10) that supplies a bonding material (M1), and the coating unit (20) is connected to the syringe (10). Nozzles (N1a, N1b) are attached to the coating unit (20). The coating unit (20) has a switching mechanism (Mc1) that selectively discharges the bonding material (M1) supplied from the syringe (10) from the nozzles (N1a, N1b).

Description

[0001] This application is based on the Chinese national application No. 201910156782.0 filed on March 1, 2019 (semi-

[0002] The content of the invention is cited below. Technical Field

[0003] The present invention relates to a semiconductor manufacturing device having a function of supplying a bonding material. Background Art

[0004] In the manufacturing process of semiconductor modules, a bonding material is supplied to a base material such as a substrate or a lead frame, and components such as a semiconductor chip are mounted on the base material. The bonding material used is in a solid form or a paste form. When a paste (bonding material) is supplied in a paste form, the following supply method N is usually performed.

[0005] In the supply method N, a structure is used in which a nozzle is connected to a syringe filled with paste. The nozzle is designed to match the coating pattern suitable for each component. In the supply method N, the paste in the syringe is squeezed out through the nozzle. Thus, the paste is applied to a specified part. In addition, in the supply method N, a semiconductor manufacturing device is used as needed, wherein the semiconductor manufacturing device uses a plurality of nozzles.

[0006] Patent Document 1 discloses a structure in which a paste is applied to a plurality of locations using a plurality of nozzles (hereinafter also referred to as “related structure A”).

[0007] Patent Document 1: Japanese Utility Model Publication No. 60-095977

[0008] In the manufacturing process of semiconductor modules, it is sometimes necessary to process a coating pattern corresponding to only one nozzle included in a plurality of nozzles. In this case, a structure is required to selectively eject the bonding material from the plurality of nozzles. The related structure A cannot meet this requirement. Summary of the invention

[0009] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus capable of selectively ejecting a bonding material from a plurality of nozzles.

[0010] In order to achieve the above-mentioned purpose, one embodiment of the present invention involves a semiconductor manufacturing device comprising: a syringe that supplies a fluid bonding material; and a coating unit that is connected to the syringe and has a plurality of nozzles installed on the coating unit, and the coating unit has a switching mechanism that enables the bonding material supplied from the syringe to be selectively ejected from the plurality of nozzles.

[0011] Effects of the Invention

[0012] According to the present invention, the coating unit includes a switching mechanism that selectively discharges the bonding material supplied from the syringe from the plurality of nozzles. Thus, the bonding material can be selectively discharged from the plurality of nozzles. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a perspective view showing the appearance of the semiconductor manufacturing apparatus according to the first embodiment.

[0014] Figure 2 This is a cross-sectional view of a portion of the semiconductor manufacturing apparatus according to the first embodiment.

[0015] Figure 3 It is a perspective view showing the appearance of a semiconductor manufacturing apparatus according to Modification 1.

[0016] Figure 4 This is a cross-sectional view of a portion of a semiconductor manufacturing apparatus according to Modification 1.

[0017] Figure 5 This is a cross-sectional view of a portion of a semiconductor manufacturing apparatus having a structure according to Modification Example 2.

[0018] Figure 6 This is a cross-sectional view of a portion of a semiconductor manufacturing apparatus having a structure according to Modification 3.

[0019] Figure 7 It is a perspective view showing the appearance of a semiconductor manufacturing apparatus according to the second embodiment.

[0020] Figure 8 This is a cross-sectional view of a portion of a semiconductor manufacturing apparatus according to the second embodiment.

[0021] Fig. 9 This is a cross-sectional view of a portion of a semiconductor manufacturing apparatus having a structure according to Modification Example 4.

[0022] Fig.10 This is a cross-sectional view of a portion of a semiconductor manufacturing apparatus having a structure according to Modification Example 5.

[0023] Description of the label

[0024] 4, 4a, 4A, 4b cutting plates, 10 syringes, 20, 20A coating units, H1, H2a, H2b, H2Aa, H2Ab, H21, H4 openings, M1 bonding materials, N1a, N1b nozzles, P1, P1a, P1b push rods, 100, 100A semiconductor manufacturing equipment. DETAILED DESCRIPTION

[0025] Below, while referring to the attached Figure 1The embodiments of the present invention are described. In the following drawings, the same components are marked with the same reference numerals. The names and functions of the components marked with the same reference numerals are the same. Therefore, the detailed description of a part of the components marked with the same reference numerals is sometimes omitted.

[0026] Furthermore, the size, material, shape, relative arrangement, etc. of each component illustrated in the embodiments may be appropriately changed according to the structure of the device to which the present invention is applied, various conditions, etc. In addition, the size of each component in each figure may be different from the actual size.

[0027] <Implementation method 1>

[0028] Figure 1 FIG. 1 is a perspective view showing the appearance of the semiconductor manufacturing apparatus 100 according to the first embodiment. Figure 1 In the figure, the X direction, the Y direction, and the Z direction are orthogonal to each other. The X direction, the Y direction, and the Z direction shown in the following figures are also orthogonal to each other. Hereinafter, the direction including the X direction and the direction opposite to the X direction (-X direction) is also referred to as the "X-axis direction". In addition, in the following, the direction including the Y direction and the direction opposite to the Y direction (-Y direction) is also referred to as the "Y-axis direction". In addition, in the following, the direction including the Z direction and the direction opposite to the Z direction (-Z direction) is also referred to as the "Z-axis direction".

[0029] In addition, hereinafter, a plane including the X-axis direction and the Y-axis direction is also referred to as an "XY plane". In addition, hereinafter, a plane including the X-axis direction and the Z-axis direction is also referred to as an "XZ plane". In addition, hereinafter, a plane including the Y-axis direction and the Z-axis direction is also referred to as a "YZ plane".

[0030] Figure 2 FIG. 1 is a cross-sectional view of a portion of the semiconductor manufacturing apparatus 100 according to the first embodiment. Figure 2 In the embodiment, only the main components (e.g., the syringe 10 described later, the coating unit 20 described later, and the cutting plate 4 described later) are shown in cross-section. Figure 2 In the figure, the main structural elements are shown briefly.

[0031] Reference Figure 1 as well as Figure 2 The semiconductor manufacturing apparatus 100 includes: a syringe 10; a coating unit 20; nozzles N1a and N1b; and a cut plate control device 50. The syringe 10 has a structure for storing a bonding material M1 described later. The syringe 10 has an opening H1 as a through hole.

[0032] The syringe 10 is filled with a bonding material M1. The bonding material M1 is a fluid material. That is, the bonding material M1 is a paste material. The bonding material M1 is used, for example, in the manufacturing process of a semiconductor module when bonding a semiconductor chip to a base material such as a substrate or a lead frame. The bonding material M1 is, for example, solder.

[0033] The coating unit 20 is a container configured to store the bonding material M1. The coating unit 20 is connected to the syringe 10. Specifically, the coating unit 20 is connected to the opening H1 of the syringe 10. The syringe 10 is configured to supply the bonding material M1 to the coating unit 20 from the opening H1.

[0034] The structure of the nozzle N1a is different from that of the nozzle N1b. For example, the hole diameter and the position of the hole in the nozzle N1a are different from those in the nozzle N1b.

[0035] The coating unit 20 is provided with openings H2a and H2b as through holes. In addition, nozzles N1a and N1b are installed in the coating unit 20. The nozzle N1a is connected to the opening H2a. The nozzle N1a is configured to eject the bonding material M1 passing through the opening H2a. The nozzle N1b is connected to the opening H2b. The nozzle N1b is configured to eject the bonding material M1 passing through the opening H2b.

[0036] The coating unit 20 includes a switching mechanism Mc1. The switching mechanism Mc1 selectively discharges the bonding material M1 supplied from the syringe 10 from the nozzles N1a and N1b. The switching mechanism Mc1 includes a cutting plate 4. The cutting plate 4 includes cutting plates 4a and 4b.

[0037] The cutting plate control device 50 has a function of moving the connection units 5a and 5b in the horizontal direction (X-axis direction). The connection units 5a and 5b are rod-shaped components. The cutting plate 4a is fixed to the connection unit 5a. The cutting plate 4b is fixed to the connection unit 5b. Therefore, the cutting plate control device 50 has a function of moving the cutting plates 4a and 4b in the horizontal direction via the connection units 5a and 5b. That is, the cutting plate 4 (cutting plates 4a and 4b) is configured to be freely movable in the horizontal direction. The cutting plates 4a and 4b move to selectively block the openings H2a and H2b.

[0038] Hereinafter, the path from the opening H1 to the opening H2a of the syringe 10 through which the bonding material M1 flows is also referred to as "path Pt1a". Also, the path from the opening H1 to the opening H2b of the syringe 10 through which the bonding material M1 flows is also referred to as "path Pt1b".

[0039] Regarding the state of the path Pt1a, there are a cut-off state Sxa and an open state Swa. The cut-off state Sxa is a state in which the path Pt1a is cut off by the cut-off plate 4a. In addition, the cut-off state Sxa of the present embodiment is also a state in which the opening H2a is blocked by the cut-off plate 4a. The open state Swa is a state in which the path Pt1a is not cut off by the cut-off plate 4a. In addition, the open state Swa of the present embodiment is also a state in which the opening H2a is not blocked by the cut-off plate 4a.

[0040] Regarding the state of the path Pt1b, there are a cut-off state Sxb and an open state Swb. The cut-off state Sxb is a state in which the path Pt1b is cut off by the cut-off plate 4b. In addition, the cut-off state Sxb of this embodiment is also a state in which the opening H2b is blocked by the cut-off plate 4b. The open state Swb is a state in which the path Pt1b is not cut off by the cut-off plate 4b. In addition, the open state Swb of this embodiment is also a state in which the opening H2b is not blocked by the cut-off plate 4b.

[0041] Hereinafter, the state in which the path Pt1a is in the open state Swa and the path Pt1b is in the cut-off state Sxb is also referred to as “state Sa”. Also, the state in which the path Pt1b is in the open state Swb and the path Pt1a is in the cut-off state Sxa is also referred to as “state Sb”.

[0042] The cutting plate control device 50 moves the cutting plates 4a and 4b in the horizontal direction so as to selectively generate the state Sa and the state Sb.

[0043] A dispenser D1a is connected to the syringe 10 via the pipe 7a. The dispenser D1a has a function of adjusting the air pressure. Specifically, the dispenser D1a has a function of applying pressure to the bonding material M1 in the syringe 10 through air. Hereinafter, the pressure applied by the dispenser D1a to the bonding material M1 in the syringe 10 is also referred to as "pressure Pw1". The dispenser D1a is configured to freely change the pressure Pw1. The dispenser D1a changes the pressure Pw1 so that the syringe 10 supplies the bonding material M1 to the coating unit 20. The bonding material M1 flows to the coating unit 20 due to the pressure Pw1.

[0044] When the state of the path Pt1a is the open state Swa and the state of the path Pt1b is the cut-off state Sxb, that is, when the condition Sa occurs, the nozzle N1a ejects the bonding material M1 in the coating unit 20. When the state of the path Pt1b is the open state Swb and the state of the path Pt1a is the cut-off state Sxa, that is, when the condition Sb occurs, the nozzle N1b ejects the bonding material M1 in the coating unit 20.

[0045] Hereinafter, the nozzle used for ejecting the bonding material M1 is also referred to as a "used nozzle". In addition, the nozzle not used for ejecting the bonding material M1 is also referred to as a "non-used nozzle". One of the nozzles N1a and N1b is a used nozzle. The nozzle N1a and N1b that is not a used nozzle is a non-used nozzle. That is, the nozzles N1a and N1b include a used nozzle and a non-used nozzle.

[0046] Hereinafter, a portion of the bonding material M1 in the coating unit 20 that faces the non-used nozzle is also referred to as "bonding material M1x". In addition, another portion of the bonding material M1 in the coating unit 20 that faces the used nozzle is also referred to as "bonding material M1m".

[0047] (action)

[0048] Next, the operation of the semiconductor manufacturing apparatus 100 will be described. Here, the following premise Pm1 is considered. In the premise Pm1, a discharge process Pa for discharging the bonding material M1 from the nozzle N1a is performed. That is, in the premise Pm1, the nozzle N1a is a use nozzle, and the nozzle N1b is a non-use nozzle. In addition, in the premise Pm1, the bonding material M1 exists in the coating unit 20. In addition, in the premise Pm1, the applicator D1a changes the pressure Pw1 so that the bonding material M1 is discharged from the use nozzle.

[0049] In the ejection process Pa, the cut-off plate control device 50 moves the cut-off plates 4a, 4b (connection units 5a, 5b) in the horizontal direction to generate the situation Sa. Thus, the state of the path Pt1a is set to the open state Swa, and the state of the path Pt1b is set to the cut state Sxb.

[0050] Therefore, the flow of the bonding material M1x toward the non-use nozzle stops, while the flow of the bonding material M1m toward the use nozzle does not stop. That is, the cutting plate 4 including the cutting plates 4a and 4b is configured to block the flow of the bonding material M1x, but does not block the flow of the bonding material M1m. As a result, the bonding material M1m is ejected from the nozzle N1a.

[0051] Next, consider the following premise Pm2. In premise Pm2, a discharge process Pb is performed to discharge the bonding material M1 from the nozzle N1b. That is, in premise Pm2, the nozzle N1b is a used nozzle, and the nozzle N1a is a non-used nozzle. In addition, in premise Pm2, the bonding material M1 exists in the coating unit 20. In addition, in premise Pm2, the dropper D1a changes the pressure Pw1 so that the bonding material M1 is discharged from the used nozzle.

[0052] In the ejection process Pb, the cut-off plate control device 50 moves the cut-off plates 4a, 4b (connecting units 5a, 5b) in the horizontal direction to generate a situation Sb. Thus, the state of the path Pt1b is set to the open state Swb, and the state of the path Pt1a is set to the cut state Sxa.

[0053] Therefore, the flow of the bonding material M1x toward the non-use nozzle stops, while the flow of the bonding material M1m toward the use nozzle does not stop. That is, the cutting plate 4 including the cutting plates 4a and 4b is configured to block the flow of the bonding material M1x, but does not block the flow of the bonding material M1m. As a result, the bonding material M1m is ejected from the nozzle N1b.

[0054] In addition, when one of the nozzles N1a and N1b is selected (set) as the nozzle to be used, the ejection process Pa and the ejection process Pb are selectively performed. That is, the cutting plate 4 including the cutting plates 4a and 4b is a plate for flowing the bonding material M1 so that the bonding material M1 is selectively ejected from the nozzles N1a and N1b.

[0055] As described above, according to the present embodiment, the coating unit 20 includes the switching mechanism Mc1 that selectively discharges the bonding material M1 supplied from the syringe 10 from the nozzles N1a and N1b. This allows the bonding material to be selectively discharged from the plurality of nozzles.

[0056] Furthermore, according to the present embodiment, a plurality of nozzles are collectively attached to one syringe 10 via the coating unit 20 .

[0057] In addition, according to the present embodiment, a nozzle to be used can be selected from a plurality of nozzles, and the bonding material M1 can be ejected from the nozzle to be used via the coating unit 20 connected to one syringe 10. That is, the presence or absence of ejection of the bonding material M1 at each nozzle can be switched. Therefore, it is possible to apply a plurality of patterns using the bonding material without replacing the nozzle.

[0058] Furthermore, according to the present embodiment, the presence or absence of discharge of the bonding material M1 at each nozzle can be switched simply by moving the cutting plate 4 (cutting plates 4a, 4b) that is movable in the horizontal direction.

[0059] In the supply method N described above, when the number of components to be mounted is large, the number of application patterns also increases. Therefore, a large number of nozzles need to be used. In addition, in order to stabilize the amount of paste applied, a common method is to connect one syringe to one nozzle.

[0060] In addition, when it is necessary to process multiple coating patterns, either of the following methods N1 and N2 has been used in the past. In method N1, the nozzles used as the objects of use among the multiple nozzles are switched with respect to one syringe. In addition, in method N2, a structure in which multiple nozzles are respectively installed in multiple syringes is used. However, methods N1 and N2 have the following problems.

[0061] First, in method N1, each time the nozzle is switched, it is necessary to perform operations such as nozzle replacement and parameter calibration accompanying the replacement. Therefore, there is a problem that each time the nozzle is switched, operation time is required.

[0062] In the method N2, since a large number of syringes need to be used, there is a problem in that productivity is reduced due to the complexity of management of the life of each syringe, inventory management of each syringe, etc.

[0063] Here, the semiconductor manufacturing apparatus 100 of the present embodiment includes the above-mentioned switching mechanism Mc1 . Therefore, the above-mentioned problems can be solved.

[0064] <Variation 1>

[0065] Hereinafter, the structure of the first embodiment is also referred to as “structure Ct1”. In addition, the structure of this modified example is also referred to as “structure Ctm1”. Structure Ctm1 is a structure for moving the cutting plate 4 in the vertical direction. Structure Ctm1 is applied to structure Ct1 (first embodiment).

[0066] Figure 3 It is a perspective view showing the appearance of a semiconductor manufacturing apparatus 100 according to Modification 1. Figure 4 FIG. 1 is a cross-sectional view of a portion of a semiconductor manufacturing apparatus 100 according to Modification 1. Figure 4 In the embodiment, only the main components (e.g., the syringe 10, the coating unit 20, and the cutting plate 4) are shown in cross-section. Figure 4 In the figure, the main structural elements are shown briefly.

[0067] Reference Figure 3 as well as Figure 4 In the structure Ctm1, the cutting plate control device 50 has a function of moving the connection units 5a and 5b in the vertical direction. The cutting plate 4a is fixed to the connection unit 5a. The cutting plate 4b is fixed to the connection unit 5b. Therefore, the cutting plate control device 50 has a function of moving the cutting plates 4a and 4b in the vertical direction via the connection units 5a and 5b. That is, in the structure Ctm1, the cutting plate 4 (cutting plates 4a and 4b) is configured to be freely movable in the vertical direction. The cutting plates 4a and 4b move to selectively cut off the paths Pt1a and Pt1b.

[0068] The state of the path Pt1a includes a cut state Sxa and an open state Swa. The cut state Sxa is a state where the path Pt1a is cut by the cut plate 4a. The open state Swa is a state where the path Pt1a is not cut by the cut plate 4a.

[0069] The state of the path Pt1b includes a cut state Sxb and an open state Swb. The cut state Sxb is a state where the path Pt1b is cut by the cut plate 4b. The open state Swb is a state where the path Pt1b is not cut by the cut plate 4b.

[0070] In the configuration Ctm1, the cutting plate control device 50 moves the cutting plates 4a and 4b in the vertical direction so as to selectively cause the above-described state Sa and the above-described state Sb.

[0071] In the structure Ctm1, as in the first embodiment, the ejection process Pa and the ejection process Pb are selectively performed. In the ejection process Pa in the structure Ctm1, the cutting plate control device 50 moves the cutting plates 4a, 4b (connecting units 5a, 5b) in the vertical direction to generate the condition Sa. As a result, the state of the path Pt1a is set to the open state Swa, and the state of the path Pt1b is set to the cut-off state Sxb. Therefore, the flow of the bonding material M1x toward the non-used nozzle stops, and the flow of the bonding material M1m toward the used nozzle does not stop. That is, the cutting plate 4 including the cutting plates 4a, 4b is configured to prevent the flow of the bonding material M1x, and does not prevent the flow of the bonding material M1m. As a result, the bonding material M1m is ejected from the nozzle N1a.

[0072] In the ejection process Pb in the configuration Ctm1, the cut-off plate control device 50 moves the cut-off plates 4a, 4b (connecting units 5a, 5b) in the vertical direction to generate the condition Sb. Thus, the state of the path Pt1b is set to the open state Swb, and the state of the path Pt1a is set to the cut-off state Sxa. Therefore, the flow of the bonding material M1x toward the non-used nozzle stops, and the flow of the bonding material M1m toward the used nozzle does not stop. That is, the cut-off plate 4 including the cut-off plates 4a, 4b is configured to block the flow of the bonding material M1x, and does not block the flow of the bonding material M1m. Thus, the bonding material M1m is ejected from the nozzle N1b.

[0073] In the structure Ctm1, the above-mentioned ejection process Pa and ejection process Pb are selectively performed. That is, the cutting plate 4 including the cutting plates 4a and 4b is a plate for flowing the bonding material M1 so that the bonding material M1 is selectively ejected from the nozzles N1a and N1b.

[0074] As described above, according to this modification, the same effect as that of the first embodiment is obtained. In addition, according to this modification, the cutting plates 4a and 4b are configured to be freely movable in the vertical direction. Therefore, along with the movement of the cutting plates 4a and 4b, the flow rate of the bonding material M1 toward the nozzle can be increased. Figure 2 Therefore, it is possible to prevent liquid dripping from occurring at each nozzle.

[0075] <Variation 2>

[0076] Hereinafter, the structure of this modification example is also referred to as "structure Ctm2". Structure Ctm2 is a structure using a dispenser D1a and a push rod. In structure Ctm2, the push rod is provided in the coating unit 20. Structure Ctm2 is applied to all or part of structure Ct1 (embodiment 1) and structure Ctm1 (modification example 1).

[0077] As an example, a structure Ctm1 to which a structure Ctm2 is applied (hereinafter also referred to as "structure Ctm12") is shown below. Figure 4 The structure of applies the structure of Ctm2.

[0078] Figure 5 FIG. 1 is a cross-sectional view of a portion of a semiconductor manufacturing apparatus 100 having a structure Ctm12 according to a modification example 2. In the structure Ctm12, a push rod P1 is provided in the coating unit 20. The push rod P1 is a component for applying pressure to the bonding material M1 in the coating unit 20. Figure 5 In FIG. 1 , as an example, a configuration in which two push rods P1 are provided in the coating unit 20 is shown.

[0079] Hereinafter, the two plungers P1 are also referred to as “plungers P1a, P1b.” Plunger P1a is provided above opening H2a (nozzle N1a) in coating unit 20 . Plunger P1b is provided above opening H2b (nozzle N1b) in coating unit 20 .

[0080] The push rods P1a and P1b are respectively configured to be freely movable in the vertical direction. The push rod control device 60 has the function of moving the push rods P1a and P1b in the vertical direction. The push rod P1a can move in a manner that applies pressure to the portion near the opening H2a (nozzle N1a) in the bonding material M1. The push rod P1b can move in a manner that applies pressure to the portion near the opening H2b (nozzle N1b) in the bonding material M1.

[0081] In the state Sa, the push rod control device 60 moves the push rod P1a in the vertical direction as needed. Thus, the amount of bonding material M1 ejected from the nozzle N1a can be adjusted. In addition, in the state Sb, the push rod control device 60 moves the push rod P1b in the vertical direction as needed. Thus, the amount of bonding material M1 ejected from the nozzle N1b can be adjusted. According to the above structure, it is possible to prevent liquid dripping from each nozzle.

[0082] When the discharge amount of the bonding material M1 from each nozzle is inappropriate, the push rod control device 60 moves the push rod as necessary as described above. This makes it possible to adjust the discharge amount of the bonding material M1 from each nozzle.

[0083] <Variation 3>

[0084] Hereinafter, the structure of this modification example is also referred to as “structure Ctm3.” Structure Ctm3 is a structure using two dispensers. Structure Ctm3 is applied to all or part of structure Ct1 (embodiment 1) and structure Ctm1 (modification example 1).

[0085] As an example, a structure Ctm1 to which a structure Ctm3 is applied (hereinafter also referred to as "structure Ctm13") is shown below. Figure 4 The structure of applies the structure of Ctm3.

[0086] Figure 6 1 is a cross-sectional view of a portion of a semiconductor manufacturing apparatus 100 having a structure Ctm13 according to Modification 3. In the structure Ctm13, a dispenser D1b is connected to the coating unit 20 via a pipe 7b.

[0087] The pipe 7b includes pipes 7ba and 7bb. The pipe 7ba is connected to a portion above the opening H2a (nozzle N1a) in the coating unit 20. The pipe 7bb is connected to a portion above the opening H2b (nozzle N1b) in the coating unit 20.

[0088] The dispenser D1b has a function of adjusting the air pressure using air. Specifically, the dispenser D1b has a function of applying pressure to the bonding material M1 in the coating unit 20 through the air via the pipe 7b. Hereinafter, the pressure applied by the dispenser D1b to the bonding material M1 in the coating unit 20 is also referred to as "pressure Pw1b". The dispenser D1b is an adjustment dispenser configured to freely change the pressure Pw1b.

[0089] In the condition Sa, the dropper D1b adjusts the pressure applied to the portion near the opening H2a (nozzle N1a) in the bonding material M1 via the piping 7ba. Thus, the amount of bonding material M1 ejected from the nozzle N1a can be adjusted. In addition, in the condition Sb, the dropper D1b adjusts the pressure applied to the portion near the opening H2b (nozzle N1b) in the bonding material M1 via the piping 7bb. Thus, the amount of bonding material M1 ejected from the nozzle N1b can be adjusted. According to the above structure, it is possible to prevent liquid dripping from each nozzle.

[0090] <Implementation method 2>

[0091] Figure 7 It is a perspective view showing the appearance of a semiconductor manufacturing apparatus 100A according to the second embodiment. Figure 8 FIG. 1 is a cross-sectional view of a portion of a semiconductor manufacturing apparatus 100A according to Embodiment 2. Figure 8 In the embodiment, only the main components (e.g., the syringe 10, the coating unit 20A described later, and the cutting plate 4A described later) are shown in cross-section. Figure 8 In the figure, the main structural elements are shown briefly.

[0092] Reference Figure 7 as well as Figure 8 , the semiconductor manufacturing apparatus 100A and Figure 2 The semiconductor manufacturing apparatus 100A is different from the semiconductor manufacturing apparatus 100 in that a coating unit 20A is provided instead of the coating unit 20, and a cutting plate control device 50A is provided instead of the cutting plate control device 50. The semiconductor manufacturing apparatus 100A has the same structure as the semiconductor manufacturing apparatus 100, and thus detailed description thereof is omitted.

[0093] Although the details will be described later, the coating unit 20A is configured to store the bonding material M1. The coating unit 20A is connected to the syringe 10. In addition, the nozzles N1a and N1b are attached to the coating unit 20A.

[0094] Specifically, the coating unit 20A includes a filling unit 21, a nozzle connection unit 22, and a connection unit 23. The filling unit 21 is a container for storing the bonding material M1. The filling unit 21 is connected to the opening H1 of the syringe 10. The syringe 10 is configured to supply the bonding material M1 from the opening H1 to the filling unit 21. In addition, the filling unit 21 has an opening H21 as a through hole.

[0095] The nozzle connection unit 22 has a disk shape and is connected to the filling unit 21 via the connection unit 23 .

[0096] The nozzle connection unit 22 has a center c2. The nozzle connection unit 22 is provided with openings H2Aa and H2Ab as through holes. The size and shape of the opening H2Aa are the same as the size and shape of the opening H2Ab. The distance from the center c2 to the opening H2Aa is equal to the distance from the center c2 to the opening H2Ab.

[0097] In addition, nozzles N1a and N1b are installed in the nozzle connection unit 22. Nozzle N1a is connected to the opening H2Aa. Nozzle N1a is configured to eject the bonding material M1 passing through the opening H2Aa. Nozzle N1b is connected to the opening H2Ab. Nozzle N1b is configured to eject the bonding material M1 passing through the opening H2Ab. The distance from the center c2 to the nozzle N1a is equal to the distance from the center c2 to the nozzle N1b.

[0098] The coating unit 20A has a switching mechanism Mc1A. The details will be described later, but the switching mechanism Mc1A selectively ejects the bonding material M1 supplied from the syringe 10 from the nozzles N1a and N1b. The switching mechanism Mc1A has a cut-off plate 4A. The cut-off plate 4A is in the shape of a disk. The cut-off plate 4A is configured to cover most of the opening H21 of the filling unit 21.

[0099] In addition, the cutting plate 4A is provided with an opening H4 as a through hole. When viewed from above (XY plane), the distance from the center c2 to the opening H4 is equal to the distance from the center c2 to the opening H2Ab. In addition, the diameter of the opening H4 is greater than or equal to the diameter of the opening H2Aa. In addition, the shape of the opening H4 is a shape that allows the bonding material M1 to easily flow inside the opening H4.

[0100] The cut-off plate control device 50A has a function of rotating the connection unit 5c. The connection unit 5c is a rod-shaped component. In addition, the filling unit 21 is configured to surround a portion of the connection unit 5c. The shape of the filling unit 21 is annular. Therefore, the filling unit 21 has an annular space SP1. The space SP1 is a space for storing the bonding material M1.

[0101] In addition, one end of the connection unit 5c is fixed to the center of the cutting plate 4A. Therefore, the cutting plate control device 50A has a function of rotating the cutting plate 4A via the connection unit 5c. That is, the cutting plate 4A is configured to be freely rotatable. The cutting plate 4A rotates so that the opening H4 is connected to one of the openings H2Aa and H2Ab. That is, the cutting plate 4A rotates so that the openings H2Aa and H2Ab are selectively blocked.

[0102] Hereinafter, the path from the opening H1 to the opening H2Aa of the syringe 10 through which the bonding material M1 flows is also referred to as "path Pt2a". In addition, the path from the opening H1 to the opening H2Ab of the syringe 10 through which the bonding material M1 flows is also referred to as "path Pt2b".

[0103] Regarding the state of the path Pt2a, there are a cut-off state SxAa and an open state SwAa. The cut-off state SxAa is a state in which the path Pt2a is cut off by the cut-off plate 4A. In addition, the open state SwAa is a state in which the path Pt2a is not cut off by the cut-off plate 4A. That is, the open state SwAa is a state in which the opening H4 of the cut-off plate 4A is connected to the opening H2Aa. Figure 8 The structure of the open state SwAa is shown.

[0104] Regarding the state of the path Pt2b, there are a cut-off state SxAb and an open state SwAb. The cut-off state SxAb is a state in which the path Pt2b is cut off by the cut-off plate 4A. In addition, the open state SwAb is a state in which the path Pt2b is not cut off by the cut-off plate 4A. That is, the open state SwAb is a state in which the opening H4 of the cut-off plate 4A is connected to the opening H2Ab.

[0105] Hereinafter, the state of the path Pt2a is the open state SwAa, and the state of the path Pt2b is the cut-off state SxAb is also referred to as "state SAa". Also, the state of the path Pt2b is the open state SwAb, and the state of the path Pt2a is the cut-off state SxAa is also referred to as "state SAb".

[0106] The cutting plate control device 50A rotates the cutting plate 4A to selectively generate the state SAa and the state SAb.

[0107] The dispenser D1a changes the pressure Pw1 so that the syringe 10 supplies the bonding material M1 to the coating unit 20A (filling unit 21). The bonding material M1 flows to the coating unit 20A (filling unit 21) due to the pressure Pw1.

[0108] When the state of the path Pt2a is the open state SwAa, and the state of the path Pt2b is the cut-off state SxAb, that is, when the situation SAa occurs, the nozzle N1a ejects the bonding material M1 in the filling unit 21. When the state of the path Pt2b is the open state SwAb, and the state of the path Pt2a is the cut-off state SxAa, that is, when the situation SAb occurs, the nozzle N1b ejects the bonding material M1 in the filling unit 21.

[0109] Hereinafter, a portion of the bonding material M1 in the filling unit 21 that faces the non-used nozzle is also referred to as "bonding material M1x". In addition, another portion of the bonding material M1 in the filling unit 21 that faces the used nozzle is also referred to as "bonding material M1m".

[0110] (action)

[0111] Next, the operation of the semiconductor manufacturing apparatus 100A is described. Here, the following premise Pm3 is considered. In premise Pm3, a spraying process PAa is performed to spray the bonding material M1 from the nozzle N1a. That is, in premise Pm3, the nozzle N1a is a use nozzle, and the nozzle N1b is a non-use nozzle. In addition, in premise Pm3, the bonding material M1 exists in the filling unit 21. In addition, in premise Pm3, the applicator D1a changes the pressure Pw1 so that the bonding material M1 is sprayed from the use nozzle.

[0112] In the ejection process PAa, the cut-off plate control device 50A rotates the cut-off plate 4A to generate a situation SAa, whereby the state of the path Pt2a is set to the open state SwAa, and the state of the path Pt2b is set to the cut-off state SxAb.

[0113] Therefore, the flow of the bonding material M1x toward the non-use nozzle stops, while the flow of the bonding material M1m toward the use nozzle does not stop. That is, the cut-off plate 4A is configured to block the flow of the bonding material M1x, but does not block the flow of the bonding material M1m. In addition, the opening H4 of the cut-off plate 4A functions as an opening for not blocking the flow of the bonding material M1m. As a result, the bonding material M1m is ejected from the nozzle N1a.

[0114] Next, consider the following premise Pm4. In premise Pm4, a discharge process PAb is performed to discharge the bonding material M1 from the nozzle N1b. That is, in premise Pm4, the nozzle N1b is a used nozzle, and the nozzle N1a is a non-used nozzle. In addition, in premise Pm4, the bonding material M1 exists in the filling unit 21. In addition, in premise Pm4, the dropper D1a changes the pressure Pw1 so that the bonding material M1 is discharged from the used nozzle.

[0115] In the ejection process PAb, the cut-off plate control device 50A rotates the cut-off plate 4A to generate the situation SAb, whereby the state of the path Pt2b is set to the open state SwAb, and the state of the path Pt2a is set to the cut-off state SxAa.

[0116] Therefore, the flow of the bonding material M1x toward the non-use nozzle stops, while the flow of the bonding material M1m toward the use nozzle does not stop. That is, the cut-off plate 4A is configured to block the flow of the bonding material M1x but not the flow of the bonding material M1m. Thus, the bonding material M1m is ejected from the nozzle N1b.

[0117] Furthermore, the ejection process PAa and the ejection process PAb are selectively performed by selecting (setting) one of the nozzles N1a and N1b as the nozzle to be used. That is, the cutting plate 4A is a plate for flowing the bonding material M1 so that the bonding material M1 is selectively ejected from the nozzles N1a and N1b.

[0118] As described above, according to this embodiment, the same effects as those of Embodiment 1 are obtained. For example, a nozzle to be used can be selected from a plurality of nozzles, and the bonding material M1 can be ejected from the nozzle to be used via the coating unit 20A connected to one syringe 10. That is, the presence or absence of ejection of the bonding material M1 at each nozzle can be switched.

[0119] In addition, when the number of nozzles used is increased, in the structure of Embodiment 1, it is necessary to increase the cutting plate and the driving mechanism of the cutting plate. However, in this embodiment, even when the number of nozzles used is increased, it is not necessary to increase the cutting plate and the driving mechanism of the cutting plate. In addition, in this embodiment, by controlling the rotation of the cutting plate, it is possible to switch the nozzles used for a plurality of nozzles. Therefore, in this embodiment, the design of the structure using a large number of nozzles can be simplified.

[0120] <Variation 4>

[0121] Hereinafter, the structure of the second embodiment is also referred to as "structure Ct2". In addition, the structure of this modified example is also referred to as "structure Ctm4". Structure Ctm4 is a structure using a dispenser D1a and a push rod. Structure Ctm4 is applied to structure Ct2 (second embodiment).

[0122] Fig. 9 This is a cross-sectional view of a portion of a semiconductor manufacturing apparatus 100A having a structure Ctm4 according to Modification Example 4. In the structure Ctm4, a push rod P1 is provided in the coating unit 20A. Specifically, a push rod P1 is provided in the filling unit 21 of the coating unit 20A. The push rod P1 in the structure Ctm4 is a component for applying pressure to the bonding material M1 in the filling unit 21. In addition, the structure and function of the push rod P1 are the same as the structure and function of the push rod P1 in Modification Example 2.

[0123] The push rod P1 is configured to be freely movable in the vertical direction. The push rod control device 60 has the function of moving the push rod P1 in the vertical direction. In the structure Ctm4, as in the modification example 2, the push rod control device 60 moves the push rod P1 in the vertical direction as needed. Thus, the same effect as the modification example 2 is obtained. That is, the amount of bonding material M1 ejected from the nozzle N1a or the nozzle N1b can be adjusted. Therefore, it is possible to prevent liquid dripping from each nozzle.

[0124] <Variant 5>

[0125] Hereinafter, the structure of this modification example is also referred to as "structure Ctm5." Structure Ctm5 is a structure using two dispensers. Structure Ctm5 is applied to structure Ct2 (Embodiment 2).

[0126] Fig.10 1 is a cross-sectional view of a portion of a semiconductor manufacturing apparatus 100A having a structure Ctm5 according to Modification 5. In the structure Ctm5, a dispenser D1b is connected to the coating unit 20A via a pipe 7c. Specifically, a dispenser D1b is connected to the filling unit 21 of the coating unit 20A via a pipe 7c.

[0127] In the structure Ctm5, the dispenser D1b has a function of applying pressure to the bonding material M1 in the filling unit 21 through the air via the pipe 7c. Hereinafter, the pressure applied to the bonding material M1 in the filling unit 21 by the dispenser D1b in the structure Ctm5 is also referred to as "pressure Pw1b". The dispenser D1b is configured to freely change the pressure Pw1b.

[0128] In the structure Ctm5, similarly to the modification 3, in the condition SAa or the condition SAb, the dispenser D1b adjusts the pressure Pw1b of the bonding material M1 applied to the filling unit 21 via the pipe 7c. Thus, the same effect as in the modification 3 is obtained. That is, the amount of the bonding material M1 ejected from the nozzle N1a or the nozzle N1b can be adjusted. Therefore, it is possible to prevent the occurrence of liquid dripping at each nozzle.

[0129] In addition, the present invention can freely combine the various embodiments and various modifications within the scope of the invention, or can appropriately modify or omit the various embodiments and various modifications.

[0130] For example, the number of types (number) of nozzles used in the configurations of each of Embodiment 1, Embodiment 2, and Modifications 1 to 5 is 2, but may be 3 or more.

Claims

1. A semiconductor manufacturing device comprising: 1 syringe for supplying a fluid bonding material; and a coating unit connected to the syringe, A plurality of nozzles are installed in the coating unit. The coating unit includes a switching mechanism that causes the bonding material supplied from the syringe to be selectively ejected from the plurality of nozzles. The switching mechanism includes a cut-off plate for causing the bonding material to flow so that the bonding material is selectively ejected from the plurality of nozzles. The plurality of nozzles include a use nozzle used for ejecting the bonding material and a non-use nozzle not used for ejecting the bonding material. The cut-off plate is configured to block a portion of the bonding material from flowing toward the non-use nozzle and not block another portion of the bonding material from flowing toward the use nozzle. The cutting plate is configured to be freely rotatable. The cut-off plate is provided with an opening for not blocking the flow of the other part of the bonding material, Any one of the plurality of nozzles is the use nozzle, Nozzles among the plurality of nozzles that are not the used nozzles are the non-used nozzles, The structure of the use nozzle is different from that of the non-use nozzle. The coating unit ejects the bonding material only from the use nozzle of the use nozzle and the non-use nozzle having different structures.

2. The semiconductor manufacturing apparatus according to claim 1, wherein: The cutting plate is configured to be freely movable in the horizontal direction.

3. The semiconductor manufacturing apparatus according to claim 1, wherein: The cutting plate is configured to be freely movable in the vertical direction.

4. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein: The coating unit is configured to store the bonding material. The coating unit is provided with a push rod for applying pressure to the bonding material.

5. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein: The coating unit is configured to store the bonding material. The coating unit is connected to a dispenser, which has the function of applying pressure to the bonding material. The dispenser is configured to freely change the pressure applied to the bonding material.

6. A semiconductor manufacturing device comprising: 1 syringe for supplying a fluid bonding material; and a coating unit connected to the syringe, A plurality of nozzles are installed in the coating unit. The coating unit includes a switching mechanism that causes the bonding material supplied from the syringe to be selectively ejected from the plurality of nozzles. The switching mechanism includes a cut-off plate for causing the bonding material to flow so that the bonding material is selectively ejected from the plurality of nozzles. The plurality of nozzles include a use nozzle used for ejecting the bonding material and a non-use nozzle not used for ejecting the bonding material. The cut-off plate is configured to block a portion of the bonding material from flowing toward the non-use nozzle and not block another portion of the bonding material from flowing toward the use nozzle. The cutting plate is configured to be freely rotatable. The cut-off plate is provided with an opening for not blocking the flow of the other portion of the bonding material.

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