Wafer bearing device temperature control method and semiconductor process equipment

Abstract

The invention provides a wafer bearing device temperature control method and semiconductor process equipment. The method comprises the following steps: when a process chamber executes a process task, obtaining a first temperature of a wafer bearing device; if the first temperature meets the preset fluctuation condition, the process chamber is controlled to execute the process task according to the temperature control mode; in the temperature control mode, the heating device is controlled according to the second temperature, the heating temperature and a preset temperature threshold value, so that the temperature of the wafer bearing device is kept stable. In the control mode, when the process chamber executes the process task, when the first temperature of the wafer bearing device meets the preset fluctuation condition, the heating device is controlled through the temperature control mode, so that the temperature of the wafer bearing device is kept stable, the wafer accumulated temperature phenomenon caused by temperature fluctuation of the wafer bearing device is avoided, and the yield of the wafer is improved. The problem that the temperature difference of the wafer is too large in the technological process is solved, and the uniformity of the deposited film is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a temperature control method for a wafer carrier and semiconductor process equipment. Background Art

[0002] In the integrated circuit chip manufacturing industry, the wafer processing process is crucial, usually including core processes such as lithography, etching, ion implantation and metal deposition. Among them, magnetron sputtering PVD (Physical Vapor Deposition) is mainly used in the metal film deposition process. Specifically, magnetron sputtering is to add magnets to the back of the target material, and use the sputtering source to form an interactive electromagnetic field in the chamber, extend the movement path of electrons and increase the concentration of plasma, and finally achieve more deposition. The plasma concentration of magnetron sputtering PVD is higher, which can achieve excellent deposition efficiency, higher film thickness, and more precise composition control of metal film deposition. However, since the uniformity of the film is greatly affected by temperature, temperature fluctuations will cause inconsistent density of the films deposited before and after. Therefore, controlling the temperature stability of each wafer during the deposition process is of great significance to the quality of the wafer.

[0003] However, the wafer is prone to temperature accumulation during the deposition process. Temperature accumulation refers to the fact that the temperature of the wafer carrier cannot be dissipated, resulting in the temperature of a wafer being unable to be stably maintained within an ideal range during the process. That is, the temperature difference of the wafer is too large during the process, thereby reducing the uniformity of the deposited film. Therefore, how to alleviate the temperature accumulation phenomenon of the wafer is an urgent problem to be solved. Summary of the invention

[0004] In view of this, an object of the present invention is to provide a wafer carrier temperature control method and semiconductor process equipment to alleviate the above technical problems.

[0005] In the first aspect, an embodiment of the present invention provides a method for controlling the temperature of a wafer carrier, wherein a process chamber comprises a heating device and a wafer carrier, and the heating device heats the wafer via the wafer carrier; the method comprises: when the process chamber performs a process task, obtaining a first temperature of the wafer carrier; if the first temperature satisfies a preset fluctuation condition, controlling the process chamber to perform the process task in a temperature control mode; in the temperature control mode, obtaining a second temperature of the wafer carrier and a heating temperature of the heating device, and controlling the heating device according to the second temperature, the heating temperature and a preset temperature threshold, so as to keep the temperature of the wafer carrier stable; wherein the preset temperature threshold is determined according to the process allowable temperature corresponding to the process task.

[0006] Preferably, the preset temperature threshold includes: the upper limit value of the bearing temperature corresponding to the wafer bearing device; the step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold includes: determining whether the second temperature is less than the upper limit value of the bearing temperature; if not, controlling the heating device to be in a non-heating state.

[0007] Preferably, the preset temperature threshold also includes: a lower limit value of the heating temperature corresponding to the heating device; a step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold, including: when the second temperature is less than the upper limit value of the load temperature, determining whether the heating temperature is greater than the lower limit value of the heating temperature; if not, controlling the heating device to be in a heating state.

[0008] Preferably, the step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold includes: when the heating temperature is greater than the lower limit of the heating temperature, determining whether the process chamber is in an idle state; if not, calculating the temperature difference between the second temperature and the heating temperature, and when the temperature difference is greater than the preset error, controlling the heating device to be in a heating state; or, when the temperature difference is not greater than the preset error, controlling the heating device to be in a non-heating state.

[0009] Preferably, the preset temperature threshold also includes: a lower limit value of the bearing temperature corresponding to the wafer bearing device; a step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold, including: when the process chamber is in an idle state, determining whether the second temperature is greater than the lower limit value of the bearing temperature; if not, controlling the heating device to be in a heating state.

[0010] Preferably, the preset temperature threshold also includes: a heating temperature upper limit value corresponding to the heating device; a step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold, including: when the second temperature is greater than the load temperature lower limit value, determining whether the heating temperature is greater than the heating temperature upper limit value; if so, controlling the heating device to be in a non-heating state.

[0011] Preferably, the step of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold comprises: if the heating temperature is not greater than the upper limit of the heating temperature, controlling the heating device to be in a heating state.

[0012] Preferably, before the step of the first temperature satisfying the preset fluctuation condition, the method also includes: obtaining multiple first temperatures within a specified time period including the current moment; if the first difference between any two adjacent first temperatures among the multiple first temperatures is less than the first preset difference threshold, it is determined that the first temperature at the current moment satisfies the preset fluctuation condition.

[0013] Preferably, before the step of the first temperature satisfying the preset fluctuation condition, the method also includes: obtaining the first temperature at the current moment, and calculating the second difference between the first temperature at the current moment and the first temperature at the previous moment; if the second difference is less than the second preset difference threshold, it is determined that the first temperature at the current moment satisfies the preset fluctuation condition.

[0014] Preferably, before the step of executing the process task in the process chamber, the method also includes: obtaining a third temperature of the wafer carrier, and if the third temperature satisfies a preset temperature range, controlling the wafer to enter the process chamber so that the process chamber executes the process task and performs process processing on the wafer; wherein the preset temperature range is determined according to the process allowable temperature.

[0015] Preferably, the method also includes: if the third temperature does not satisfy the preset temperature range, reacquiring the third temperature after a preset interval, and judging whether the reacquired third temperature satisfies the preset temperature range; and obtaining the number of judgments, when the number of judgments reaches the preset number of times, the third temperature still does not satisfy the preset temperature range, and generating an alarm prompt information to prompt the operator that the process chamber does not meet the conditions for executing the process task.

[0016] Preferably, the method further comprises: when a shutdown operation of the temperature control mode is detected, controlling the process chamber to exit the temperature control mode.

[0017] Preferably, the method further comprises: when the process chamber completes the process task, controlling the process chamber to exit the temperature control mode.

[0018] Preferably, the method further includes: when the process chamber exits the temperature control mode, obtaining a fourth temperature of the wafer carrier at this time; and controlling the heating device to be in a heating state until the fourth temperature reaches a process-allowed temperature.

[0019] In a second aspect, an embodiment of the present invention further provides a semiconductor process equipment, comprising a process chamber and a controller; wherein the process chamber comprises a heating device and a wafer supporting device, the wafer supporting device is used to support the wafer, and the heating device heats the wafer through the wafer supporting device; the controller comprises at least one processor and at least one memory, a computer program is stored in the memory, and when the computer program is executed by the processor, the steps of the method of the first aspect above are implemented.

[0020] In a third aspect, an embodiment of the present invention further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the method of the first aspect are executed.

[0021] The embodiments of the present invention bring the following beneficial effects:

[0022] An embodiment of the present invention provides a temperature control method for a wafer carrier and semiconductor process equipment. When a process task is executed in a process chamber, when the first temperature of the wafer carrier meets a preset fluctuation condition, the heating device is controlled through a temperature control mode to keep the temperature of the wafer carrier stable, thereby avoiding the phenomenon of wafer temperature accumulation caused by temperature fluctuations of the wafer carrier, improving the problem of excessive temperature difference of the wafer during the process, and improving the uniformity of the deposited film.

[0023] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description and the drawings.

[0024] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 A structural diagram for controlling wafer heating in an existing PVD chamber;

[0027] Figure 2 The following is a flow chart of the temperature control process of the existing wafer;

[0028] Figure 3 A flow chart of a temperature control method for a wafer carrier provided by an embodiment of the present invention;

[0029] Figure 4 A flow chart of another method for controlling temperature of a wafer carrier provided by an embodiment of the present invention;

[0030] Figure 5 A diagram illustrating the mechanism for the effectiveness of parameters at each stage of ShutterCoolr temperature rise provided by an embodiment of the present invention;

[0031] Figure 6 A diagram illustrating the effectiveness mechanism of parameters at each stage of WaferRecipe heating provided by an embodiment of the present invention;

[0032] Figure 7 A schematic diagram of ESC temperature change in a prior art solution provided in an embodiment of the present invention;

[0033] Figure 8 A schematic structural diagram of a semiconductor process equipment provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] In the existing PVD chamber, the structure for controlling wafer heating is as follows: Figure 1 As shown, it includes: a base lifting mechanism 11, a heater base 12, a wafer carrier 13, a wafer 14 and a plasma 15; wherein, the wafer carrier 13 is preferably an ESC (Electrostatic Chucks), the wafer 14 is arranged on the wafer carrier 13, and the plasma 15 is used to process the wafer 14. The specific structure of the PVD chamber can refer to the prior art, and the embodiments of the present invention will not be described in detail here.

[0036] During the thin film deposition process of the wafer 14, the temperature of the wafer 14 is maintained by a two-stage heat transfer structure of the Heater heating base 12 and the wafer supporting device 13; specifically, heat is conducted between the Heater heating base 12 and the wafer supporting device 13 through the back-blowing gas path, and heat is also conducted between the wafer supporting device 13 and the wafer 14 through the back-blowing gas path. For example, heat conduction by the back-blowing gas path can be understood as heat being transferred from the ESC to the wafer by Ar gas. Among them, a heating wire is arranged in the heater base 12, and the heating power and switch of the heating wire are controlled by the temperature controller 16. A temperature sensor is arranged in the wafer carrier 13, which is used to detect the current temperature of the wafer carrier 13 (such as ESC), and the current temperature is fed back to the temperature controller 16 through the feedback loop 171. The temperature controller 16 calculates the current output value based on the current temperature and PID (Proportional-Integral-Derivative) parameters, and sends the current output value to the heater base 12 through the output loop 172, so as to control the heating power of the heating wire according to the current output value, so as to control the temperature transmitted from the wafer carrier 13 to the wafer 14, and finally realize the control of the wafer temperature.

[0037] Therefore, in the processing flow of the entire wafer 14, the closed-loop control loop of the temperature controller 16 ultimately controls the heating of the heating wire in the heater base 12. However, due to the one-way conduction of the two-stage heat transfer structure in the closed-loop control loop, the feedback value of the temperature signal always lags behind the heat conduction action, and a large amount of plasma 15 will be generated during the deposition stage. The plasma contains a large amount of energy. When it is deposited on the wafer 14, the wafer 14 will experience a temperature accumulation phenomenon. Among them, the temperature accumulation phenomenon refers to the temperature on the wafer carrier 13 cannot be dissipated, resulting in the temperature of a wafer 14 cannot be stably maintained in an ideal range during the process. When the temperature difference of the wafer 14 during the deposition process is greater than a certain value (such as 10°C), it is very unfavorable for the uniformity of thin film deposition. Therefore, it is of great significance to alleviate the temperature accumulation phenomenon of the wafer.

[0038] For ease of understanding, here we take ESC as an example and combine it with the temperature control process of the wafer to explain the cause of the temperature accumulation phenomenon. Figure 2 As shown, a target temperature is set in the thermostat, where the target temperature is the target temperature corresponding to the current process. The temperature sensor detects the temperature of the ESC in real time and feeds back the current ESC temperature to the thermostat; the thermostat determines whether the current ESC temperature has reached the target temperature. If so, it means that the ESC needs to be cooled, and the thermostat controls the heating wire to stop heating, that is, turns off the Heater; conversely, if the current ESC temperature does not reach the target temperature, the thermostat calculates the heating power according to the current ESC temperature and outputs it to the heating wire, so that the heating wire continues to heat, thereby controlling the temperature of the ESC until the temperature of the ESC reaches the target temperature.

[0039] Therefore, in the above temperature control process, when the wafer is just moved into the chamber, the ESC temperature will drop suddenly due to the low temperature of the wafer itself. At this time, ① the current ESC temperature is less than the target temperature, the temperature controller outputs a large power, the heating wire is turned on and heated, and when the temperature controller outputs for a period of time, the ESC is loaded to the target temperature by the heat transmitted from the heater base. At this time, the heater base is turned off and stops heating, but the residual heat will still be transferred to the ESC by the back-blowing gas path, and the deposition of plasma will cause the wafer temperature to continue to rise; ② after the output power is turned off for a period of time, the ESC temperature drops and meets the current ESC temperature less than the target temperature. At this time, the heater base starts to heat, but it takes a while for the temperature to be transferred from the heater base to the ESC. Therefore, the ESC temperature continues to drop in a short time. When the ESC starts to heat up, the process ① is repeated, and the final result is that the temperature difference of a wafer is too large during the process, that is, the cumulative temperature phenomenon occurs, which affects the processing quality of the wafer.

[0040] Based on this, an embodiment of the present invention provides a temperature control method for a wafer carrier and semiconductor process equipment. When executing a process task in a process chamber, when the first temperature of the wafer carrier meets a preset fluctuation condition, the heating device is controlled through a temperature control mode to keep the temperature of the wafer carrier stable, thereby avoiding the phenomenon of wafer temperature accumulation caused by temperature fluctuations of the wafer carrier, improving the problem of excessive temperature difference of the wafer during the process, and improving the uniformity of the deposited film.

[0041] To facilitate understanding of this embodiment, the embodiment of the present invention is described in detail below.

[0042] Embodiment 1

[0043] The embodiment of the present invention provides a method for controlling the temperature of a wafer carrier, wherein the process chamber includes a heating device and a wafer carrier, such as Figure 1 As shown, for the sake of convenience of explanation, the heating device in the embodiment of the present invention is preferably a Heater heating base including a heating wire, and the wafer supporting device is preferably an ESC. The heating device heats the wafer via the wafer supporting device, that is, the wafer is heated by a two-stage heating structure composed of the ESC and the Heater heating base. The structure of the specific process chamber can refer to the existing process chamber, and the embodiment of the present invention will not be described in detail here.

[0044] It should be noted that the execution subject of the temperature control method of the wafer carrier described below may be a temperature controller or a controller of a semiconductor process equipment, and the embodiment of the present invention does not limit this.

[0045] For the sake of convenience, the temperature controller is used as an example. Figure 3 As shown, the temperature control method of the wafer carrier provided by the embodiment of the present invention includes the following steps:

[0046] Step S302, when the process chamber performs a process task, obtaining a first temperature of the wafer carrying device;

[0047] Specifically, when the process chamber executes a process task to process the wafer, the temperature controller obtains the first temperature of the wafer carrier, namely the ESC; wherein a temperature sensor is provided in the ESC for detecting the first temperature of the ESC in real time, and feeding back the first temperature to the temperature controller, so that the temperature controller controls the temperature of the ESC according to the first temperature, thereby avoiding the phenomenon of wafer temperature accumulation caused by the inability of the ESC temperature to dissipate.

[0048] Step S304, if the first temperature meets the preset fluctuation condition, controlling the process chamber to perform the process task according to the temperature control mode;

[0049] After the temperature controller obtains the first temperature of the ESC, it determines whether the first temperature meets the preset fluctuation condition. If so, it means that the ESC temperature fluctuates greatly, which is easy to cause the wafer temperature accumulation phenomenon. At this time, the temperature of the ESC needs to be regulated; therefore, the temperature controller turns on the temperature control mode at this time. Among them, the temperature control mode can also be called the TempControl (temperature control) module, and is pre-built into the temperature controller or controller. During the execution of the process task, when the first temperature of the ESC meets the preset fluctuation condition, the temperature control mode is triggered to start, and the process chamber is controlled to execute the process task according to the temperature control mode, thereby adjusting the temperature of the ESC through the temperature control mode, avoiding the wafer from generating temperature accumulation phenomenon, and ensuring the process quality of the wafer.

[0050] In addition, if the first temperature of the ESC does not meet the preset fluctuation condition, it means that the temperature of the ESC remains stable during the execution of the process task. At this time, it is difficult for the wafer to produce a temperature accumulation phenomenon, so there is no need to adjust the temperature of the ESC. That is, at this time, the temperature controller controls the heating device according to the existing PID parameters and the first temperature until the process task is completed. The specific existing PID parameters and the first temperature determine the power of the heating wire. The process can refer to the existing technology, and the embodiment of the present invention will not be described in detail here.

[0051] Furthermore, for determining whether the first temperature satisfies a preset fluctuation condition, one determination method is: obtaining multiple first temperatures within a specified time period including the current moment; if the first difference between any two adjacent first temperatures among the multiple first temperatures is less than a first preset difference threshold, then determining that the first temperature at the current moment satisfies the preset fluctuation condition.

[0052] Specifically, taking the current moment i as an example, the thermostat obtains multiple first temperatures within a specified time period including the current moment. If the specified time period is 5, the multiple first temperatures are respectively: T i-4 、T i-3 、T i-2 、T i-1 and T i ; Among them, T i is the first temperature at the current moment, T i-1 is the first temperature at the previous moment, and so on, the temperature controller obtains multiple first temperatures within the specified time length; then, the first difference between any two adjacent first temperatures among the multiple first temperatures is calculated to obtain multiple first differences. If the multiple first differences are all less than the first preset difference threshold, it is determined that the first temperature at the current moment meets the preset fluctuation condition. This judgment method ensures the judgment accuracy through multiple first temperatures within the specified time length, further improves the temperature control accuracy of the ESC, and avoids the phenomenon of wafer temperature accumulation caused by ESC temperature fluctuations.

[0053] In addition, another judgment method is: obtain the first temperature at the current moment, and calculate the second difference between the first temperature at the current moment and the first temperature at the previous moment; if the second difference is less than the second preset difference threshold, then the first temperature at the current moment is determined to meet the preset fluctuation condition. That is, for the first temperature at each moment, taking the current moment as an example, as long as the second difference between the first temperature at the current moment and the first temperature at the previous moment is less than the second preset difference threshold, it is determined that the first temperature at the current moment meets the preset fluctuation condition, thereby ensuring that the first temperature of the ESC at each moment does not meet the preset fluctuation condition, avoiding the phenomenon of wafer temperature accumulation caused by the first temperature at a certain moment meeting the preset fluctuation condition, and further improving the temperature control accuracy of the ESC.

[0054] It should be noted that the above-mentioned first difference and second difference are only used to characterize the difference between two adjacent first temperatures in different judgment methods. The first preset difference threshold and the second preset difference threshold may be the same or different, and may be set specifically according to actual conditions.

[0055] Step S306, in the temperature control mode, obtain the second temperature of the wafer carrier and the heating temperature of the heating device, and control the heating device according to the second temperature, the heating temperature and the preset temperature threshold to keep the temperature of the wafer carrier stable.

[0056] Among them, the preset temperature threshold is determined according to the process allowable temperature corresponding to the process task. Therefore, in the temperature control mode, the heating device is controlled by the second temperature, the heating temperature and the preset temperature threshold to keep the temperature of the wafer carrier stable, thereby avoiding the phenomenon of wafer temperature accumulation caused by temperature fluctuations of the wafer carrier, improving the problem of excessive temperature difference of the wafer during the process, and improving the uniformity of the deposited film.

[0057] In one embodiment, the preset temperature thresholds include: a load temperature upper limit value ESCHigh and a load temperature lower limit value ESCLow corresponding to the wafer load device ESC, and a heating temperature upper limit value HeaterHigh and a heating temperature lower limit value HeaterLow corresponding to the heating device; in actual applications, each preset temperature threshold is determined according to the process allowable temperature T PN The value range of the upper limit of the load temperature ESCHigh is [T PN , T PN +5℃], the range of the lower limit of the load temperature ESCLow is [T PN -5℃, T PN ], the range of the upper limit value of the heating temperature HeaterHigh is [T PN -5℃, T PN +5℃], the range of the lower limit value of the heating temperature HeaterLow is [TPN -10℃, T PN ], the specific values ​​of ESCHigh, ESCLow, HeaterHigh and HeaterLow can be set according to actual conditions.

[0058] For the sake of convenience, the second temperature of the ESC is defined as T2 and the heating temperature is defined as T Heater Therefore, in step S306, the process of controlling the heating device according to the second temperature, the heating temperature and the preset temperature threshold includes the following sub-steps:

[0059] (1) Determine whether the second temperature is less than the upper limit of the load temperature; specifically, first determine whether T2<ESCHigh. If not, that is, when T2≥ESCHigh, control the heating device to be in a non-heating state to prevent the heating device from heating up and transferring more heat to the ESC, thereby causing the ESC temperature to be unable to dissipate, resulting in temperature accumulation on the wafer.

[0060] (2) When the second temperature is less than the upper limit of the load-bearing temperature, determine whether the heating temperature is greater than the lower limit of the heating temperature; if not, control the heating device to be in a heating state.

[0061] Specifically, when T2<ESCHigh, the thermostat continues to determine whether the heating temperature is greater than the lower limit of the heating temperature, that is, whether T Heater >HeaterLow, if not, then T Heater ≤HeaterLow, the temperature controller controls the heating device to be in the heating state. In practical applications, whether in the process or not, the temperature of the heating device is not allowed to be lower than the minimum safe temperature (i.e., the lower limit of the heating temperature HeaterLow), because when the deposition rate is slow or the deposition time is short, the ESC and the heating device will maintain a certain temperature difference and gradually cool down. If the heating temperature T Heater When the temperature is lower than the lower limit of the heating temperature HeaterLow, after the process of the wafer is completed, the ESC heat will be taken away when the process chamber door is opened to transfer the wafer. When the next wafer starts the process, an alarm may be thrown due to the ESC temperature not meeting the standard and the process cannot be started. Therefore, when T Heater When ≤HeaterLow, the temperature controller controls the heating device to be in a heating state to increase the ESC temperature, thereby ensuring that subsequent wafers can perform processes normally.

[0062] (3) When the heating temperature is greater than the lower limit of the heating temperature, determine whether the process chamber is in an idle state; if not, calculate the temperature difference between the second temperature and the heating temperature, and when the temperature difference is greater than a preset error, control the heating device to be in a heating state; or, when the temperature difference is not greater than the preset error, control the heating device to be in a non-heating state.

[0063] Specifically, when T2<ESCHigh, and T Heater > HeaterLow, determine whether the process chamber is in an idle state. If not, it means that the current wafer is in the process. At this time, calculate the temperature difference between the second temperature and the heating temperature (T2-T Heater ), and when the temperature difference is greater than the preset error △T, that is, T2-T Heater >△T, it means that the temperature of the heating device is too low, and the thermostat controls the heating device to be in a heating state to properly heat the heating device to prevent the ESC from cooling down after the process is completed; on the contrary, when the temperature difference is not greater than the preset error, that is, T2-T Heater When ≤△T, it means that the temperature of the heating device is close to the ESC. In order to prevent the heating device from excessively transferring heat to the ESC, the thermostat controls the heating device to be in a non-heating state.

[0064] It should be noted that the value range of the above-mentioned preset error △T is [-5℃, 5℃]. The smaller △T is, the closer the heating process of the heating device is to the late Dep (Dielectric enhancement process, metal vapor deposition process); the larger △T is, the closer the heating process of the heating device is to the early Dep. In practical applications, it is necessary to flexibly set the value of △T according to the Dep time in the process recipe. For example, for a process recipe with a longer Dep time, the thermostat should be turned off as soon as possible due to the large accumulation of plasma, and △T is preferably set to a positive value; for a process recipe with a shorter Dep time, the thermostat should be turned off later due to the small amount of plasma energy, considering that the ESC drops in temperature when changing the chip, and △T is preferably set to a smaller value. The specific value of △T can be set according to actual conditions.

[0065] (4) When the process chamber is in an idle state, determining whether the second temperature is greater than a lower limit of the load temperature; if not, controlling the heating device to be in a heating state.

[0066] Specifically, when the process chamber is in an idle state, it means that the current wafer is not in the process. At this time, there is no plasma in the process chamber to transfer heat to the ESC. The temperature controller determines whether the second temperature is greater than the lower limit of the load temperature. If not, that is, T2≤ESCLow. Considering that the process chamber may be idle for a long time at this time, the next wafer may enter the process chamber at any time. Therefore, the temperature controller controls the heating device to be in a heating state at this time to make the temperature of the ESC above the safe value, that is, T2>ESCLow.

[0067] (5) When the second temperature is greater than the lower limit of the load temperature, determine whether the heating temperature is greater than the upper limit of the heating temperature; if so, control the heating device to be in a non-heating state.

[0068] When T2>ESCLow, it means that the temperature of ESC is above the safe value; at this time, the thermostat continues to determine whether the heating temperature is greater than the upper limit of the heating temperature. If so, T Heater >HeaterHigh, if the temperature of the heating device rises at this time, due to the hysteresis, the temperature accumulation of the newly introduced wafer will be serious when it starts to Dep. Therefore, in order to avoid the heating temperature rising during a short period of idle state, the temperature controller controls the heating device to be in a non-heating state.

[0069] In addition, if the heating temperature is not greater than the upper limit of the heating temperature, that is, when T Heater When ≤HeaterHigh, in order to prevent the ESC temperature from dropping in the idle state, resulting in the ESC temperature not meeting the standard and being unable to be processed when the next wafer is transferred in, the temperature controller controls the heating device to be in the heating state.

[0070] Therefore, in the temperature control mode, the heating device is controlled by the second temperature, the heating temperature and the preset temperature threshold to keep the temperature of the ESC stable, thereby avoiding the phenomenon of wafer temperature accumulation due to ESC temperature fluctuations, improving the problem of excessive temperature difference of the wafer during the process, and improving the uniformity of the deposited film.

[0071] In one embodiment, before the process chamber executes the process task, the method also includes: obtaining a third temperature of the wafer carrier, and if the third temperature satisfies a preset temperature range, controlling the wafer to enter the process chamber so that the process chamber executes the process task and performs process processing on the wafer; wherein the preset temperature range is determined according to the process allowable temperature.

[0072] Specifically, before the wafer enters the process chamber, the temperature controller needs to determine whether the temperature of the ESC reaches the preset temperature range. Here, the temperature of the ESC before the wafer enters the process chamber is called the third temperature. The preset temperature range is based on the process allowable temperature T PN Determine, preferably [T PN -5℃, T PN +5℃], if the third temperature meets the preset temperature range, the wafer is controlled to enter the process chamber so that the process chamber performs the process task to process the wafer, thereby ensuring the process effect of the wafer being processed in the process chamber.

[0073] In addition, if the third temperature does not satisfy the preset temperature range, the third temperature is reacquired after a preset interval, and it is determined whether the reacquired third temperature satisfies the preset temperature range; and, the number of judgments is obtained. When the number of judgments reaches the preset number, if the third temperature still does not satisfy the preset temperature range, an alarm prompt message is generated to prompt the operator that the process chamber does not meet the conditions for executing the process task.

[0074] Among them, the preset interval is preferably 3s, that is, if the third temperature at the current moment does not meet the preset temperature range, the temperature controller will re-acquire the third temperature after waiting for 3s, and again determine whether the re-acquired third temperature meets the preset temperature range. If it does, the wafer is controlled to enter the process chamber. Otherwise, if it does not, the third temperature will be acquired again after waiting for 3s, and it will be determined whether it meets the preset temperature range. At the same time, in order to avoid repeated judgment process, a preset number of times is also set. The temperature controller also counts the number of judgments during the repeated judgment process. If the number of judgments reaches the preset number of times, the corresponding third temperature still does not meet the preset temperature range. At this time, the temperature controller generates an alarm prompt message to prompt the operator that the process chamber does not meet the process task execution conditions, and terminates the process task corresponding to the process chamber, so that subsequent wafers do not enter the process chamber for process processing, thereby avoiding the process chamber that does not meet the process task execution conditions from performing process processing on the wafer, thereby ensuring the process effect of the wafer.

[0075] In one embodiment, when the exit condition is met, the process chamber is controlled to exit the temperature control mode. One of the exit methods is: when the shutdown operation of the temperature control mode is detected, the process chamber is controlled to exit the temperature control mode. That is, in the semiconductor process equipment, a shutdown button for the temperature control mode is also provided. When the operator operates (such as pressing) the shutdown button, the temperature controller controls the process chamber to exit the temperature control mode. In some scenarios, a shutdown button logo can also be displayed on a display device of the semiconductor process equipment, such as a display screen. When the operator triggers or clicks the shutdown button logo, the temperature controller controls the process chamber to exit the temperature control mode.

[0076] In another exit mode, when the process chamber completes the process task, the process chamber is controlled to exit the temperature control mode. That is, when the temperature controller detects that the process chamber is not in the process task Job environment, the temperature controller controls the process chamber to exit the temperature control mode and controls the process chamber to operate in the corresponding mode or environment, thereby ensuring the normal operation of the process chamber.

[0077] Furthermore, the method also includes: when the process chamber exits the temperature control mode, obtaining the fourth temperature of the wafer carrier at this time; and controlling the heating device to be in a heating state until the fourth temperature reaches the process-allowed temperature.

[0078] Specifically, when the process chamber exits the temperature control mode, at this time, the controller controls the temperature of the wafer carrier according to the existing scheme, that is, obtains the temperature of the ESC at this time, which is called the fourth temperature for the sake of convenience, and controls the heating device to be in a heating state according to the current fourth temperature and PID parameters until the fourth temperature reaches the process allowable temperature T PN, thereby restoring the temperature of the ESC and ensuring that the ESC does not drop in temperature when there is no process task in the process chamber, so that the next wafer can be transferred in and the process can be carried out normally, thereby ensuring the process efficiency and process effect of the semiconductor process equipment.

[0079] It should be noted that the first temperature, the second temperature, the third temperature and the fourth temperature are only used to distinguish the temperature T of the wafer carrier in different stages. ESC , heating temperature T Heater It is used only to characterize the temperature of the heating device.

[0080] Embodiment 2

[0081] Based on the above method embodiment, the embodiment of the present invention also provides another wafer carrier temperature control method, which focuses on describing the temperature stability of the wafer deposition process through the temperature difference control logic for the two-stage temperature control wafer carrier ESC. Figure 4 As shown, the method comprises the following steps:

[0082] (A1) Before the wafer enters the process chamber, it is necessary to determine the ESC temperature T ESC Whether the process allowable temperature T is reached PN ±5℃, that is, whether |T ESC -T PN |<5℃, the purpose of this judgment is to avoid ESC temperature T ESC If it is less than or higher than this range, the process effect will be affected. If so, the wafer is controlled to enter the process chamber; if not, T ESC If the standard is not met, wait for 3 seconds before judging again. At the same time, set the number of repeated judgments in the thermostat or controller. When the number of repeated judgments is reached, T ESC If the standard is still not met, an alarm prompt message is generated to remind the operator that the process chamber does not meet the conditions for executing the process task, to prevent subsequent wafers from entering the process chamber, and to terminate the process chamber from executing the current process task in the future.

[0083] (A2) After the wafer enters the process chamber, until the process task Job is completed, when the temperature control mode (i.e. Figure 4 When the trigger condition of the dotted box in the middle is met, the temperature control mode is controlled to continue to cycle; in addition, after the Job is completed, the thermostat automatically outputs power to restore the ESC temperature to the target temperature (i.e., the process allowable temperature T PN ), ensuring that the ESC does not cool down when there is no job in the process chamber.

[0084] The trigger condition of the temperature control mode is: during the execution of the job, if the ESC temperature fluctuates, that is, the preset fluctuation condition is met, then the trigger condition is met. The specific preset fluctuation condition can be referred to the above embodiment, and the embodiment of the present invention will not be described in detail here. In addition, the process allows the temperature T PN It is set according to different process requirements, and 270°C is preferred here.

[0085] In addition, in the temperature control mode, according to the process allowable temperature T PN Determine the values ​​of ESCHigh, ESCLow, HeaterHigh and HeaterLow, and the corresponding process allowable temperature T for different process recipes. PN They may be different or the same, so after the temperature controller obtains the process formula, it needs to adjust the temperature according to the process allowable temperature T PN Determine the corresponding values ​​of ESCHigh, ESCLow, HeaterHigh, and HeaterLow.

[0086] And, for the same process recipe, when the first wafer enters the process chamber, the temperature controller obtains the corresponding process recipe and sets the process allowable temperature T according to the process recipe. PN Determine the corresponding ESCHigh, ESCLow, HeaterHigh and HeaterLow values. For example, if a Job contains two process recipes (ShutterCool and WaferRecipe), the ESCHigh, ESCLow, HeaterHigh and HeaterLow corresponding to ShutterCool and WaferRecipe are shown in Table 1 below:

[0087] Table 1

[0088]

[0089] For ease of understanding, the specific control process of the temperature control mode (ie, A3 to A6) is described here based on the parameter values ​​in Table 1 above.

[0090] (A3) In temperature control mode, the first priority condition is: judging the ESC temperature T ESC Is it less than the upper limit of the load temperature, that is, judge whether T ESC <ESCHigh, if not, the heater is controlled to be in a non-heating state, that is, the thermostat does not output power, and the heater does not heat, so as to avoid the heater from heating up and transferring more heat to the ESC; after the ESC temperature fluctuates, it will re-judge whether the preset fluctuation conditions are met. If the ESC temperature does not fluctuate, the heater is controlled to be in a non-heating state until the ESC temperature TESC Decline changes.

[0091] For example, Figure 6 As shown in the figure, in WaferRecipe, ESCHigh is set to 276℃, and the effective time is Figure 6 In the second stage, the ESC temperature T ESC is greater than ESCHigh, so the heater is controlled to be in a non-heating state until the end of the third stage. In the fourth stage, the temperature of the heater is T Heater Less than HeaterLow.

[0092] (A4) When T ESC When ESC is High, the thermostat continues to determine whether the second priority condition is met: Heater > HeaterLow; if not, the heater is controlled to be in heating state;

[0093] Specifically, in the steady state, the temperature of the heating device T Heater It will be 10℃ higher than the ESC temperature. Since HeaterLow is the lower limit temperature of the heater, the heater temperature T Heater The temperature is not allowed to be lower than the minimum safe temperature. When the deposition rate is slow or the deposition time is short, the ESC and Heater will maintain a certain temperature difference and gradually cool down. Heater If the temperature is lower than HeaterLow, the heat of ESC will be taken away when the chamber door is opened to transfer wafers after the process of the wafer is completed. When the process of the next wafer starts, an alarm may be thrown due to the ESC temperature not meeting the standard and the process cannot be carried out. The temperature control mode takes effect during the job (regardless of whether the wafer is being processed at this time). ESC and Heater maintain temperature difference and cool down. When the Heater temperature reaches the minimum limit HeaterLow, the heating device Heater needs to be controlled to be in heating state to restore the ESC temperature.

[0094] For example, Figure 5 As shown, the corresponding HeaterLow of ShutterCool is 270℃, and the corresponding ESCHigh is 276℃. The effective time is Figure 5 In step ①, at this time, the ESC temperature is lower than ESCHigh, and the Heater temperature is lower than 270°C. Therefore, the heating device is controlled to be in the heating state, and the power curve jumps up.

[0095] It should be noted that the heating state here refers to the power output allowed by the thermostat, and the power size depends on the PID control. For details, please refer to the prior art, and the embodiment of the present invention will not be described in detail here. Also, when the ESC temperature fluctuates, it is re-determined whether the preset fluctuation condition is met, and for details, please refer to the above embodiment.

[0096] (A5) When T ESC <ESCHigh,and,T Heater > HeaterLow, the temperature controller continues to determine the third priority condition: whether the process chamber is idle. If not, that is, the current wafer is in the process (including Dep and Cool processes), then determine T ESC -T Heater Is it greater than the preset error △T, that is, T ESC -T Heater >△T. The smaller △T is, the closer the heater heating is to the late Dep period; the larger △T is, the closer the heater heating is to the early Dep period. The operator should flexibly set it according to the Dep time in the process recipe. For process recipes with longer Dep time, the thermostat should be turned off as soon as possible due to more plasma accumulation, and △T should be set to a positive value; for process recipes with shorter Dep time, the thermostat should be turned off later due to less plasma energy, and △T should be set to a smaller value considering that the ESC cools down during chip replacement.

[0097] In addition, since the plasma will transfer heat to the wafer during the Dep process, the ESC temperature can be completely maintained by the wafer heat. It is only necessary to maintain a certain temperature difference between the Heater and the ESC to ensure that the Heater does not drop in temperature. The Cool step after Dep can maintain the temperature of the ESC. ESC -T Heater >△T, it means that the heater has been turned off for too long because the ESC temperature is greater than ESCHigh, and the heater temperature is too low. At this time, the heater needs to be heated appropriately to prevent the ESC from being cooled by the heater after stopping Dep. Therefore, the thermostat controls the heating device to be in the heating state; when T ESC -T Heater When ≤△T, it means that the heater temperature is close to the ESC. In order to prevent the heater from over-transferring heat to the ESC, the thermostat controls the heating device to be in a non-heating state. Also, when the ESC temperature fluctuates, it is re-determined whether the preset fluctuation condition is met. For details, please refer to the above embodiment.

[0098] And, for proper heating of the Heater, proper heating here means turning on the thermostat, and the target temperature of the heating is when the ESC temperature reaches T PN ; However, when the ESC temperature reaches T PN Previously, if the temperature difference between the heater and the ESC was shortened, the thermostat would be turned off and the temperature would no longer rise, so it was called appropriate heating.

[0099] like Figure 5 As shown, set △T to 4℃, and the effective time is Figure 5In ②, at this time, the ESC temperature is lower than ESCHigh, the Heater temperature is higher than HeaterLow, and it is in the ShutterCool process. The temperature difference is greater than 4°C. Therefore, the Heater is controlled to stop heating and the power curve falls back. It should be noted that the difference between Dep and Cool is that RF ignition is loaded, and other process conditions are the same; Dep time is relatively long, and Cool time is very short, only 5s or even 3s, which can be seen in Figure 5 Slight fluctuations in the ESC temperature of each chip.

[0100] (A6) When the process chamber is in an idle state (neither in Dep nor in cool), there is no plasma in the process chamber to transfer heat to the ESC. The temperature controller determines whether the ESC temperature is greater than ESCLow, that is, determines T ESC >ESCLow, if not, considering that the process chamber may be idle for a long time and the next wafer may enter the process chamber at any time, the temperature controller controls the heating device to be in a heating state to keep the temperature of the ESC above the safe value. When the ESC temperature fluctuates, it is re-determined whether the preset fluctuation condition is met, and the details can be referred to the above embodiment.

[0101] If T ESC >ESCLow, then further determine whether the Heater temperature is greater than HeaterHigh. If so, T Heater >HeaterHigh, if the temperature of the heating device rises at this time, due to hysteresis, the temperature accumulation is serious when the newly introduced wafer starts to Dep, so in order to avoid the heating temperature rising in a short idle state, the temperature controller controls the heating device to be in a non-heating state. Heater ≤HeaterHigh, in order to avoid the ESC temperature dropping in the idle state, resulting in the ESC temperature not meeting the standard and being unable to be processed when the next wafer is transferred in, the temperature controller controls the heating device to be in the heating state. It should be noted that when the ESC temperature fluctuates, it is re-determined whether the preset fluctuation condition is met, and the details can be referred to the above embodiment.

[0102] like Figure 6 As shown in the figure, WaferRecipe sets ESCLow to 273℃ and HeaterHigh to 271℃, and the effective time is Figure 6In step ⑤, since ShutterCool ends, the ESC temperature rises briefly after the airflow stops. The ESC temperature is less than ESCHigh but greater than ESCLow. The Heater temperature is greater than HeaterLow and HeaterHigh. Therefore, the Heater is controlled to stop heating and the power curve falls. After step ⑤, WaferRecipe is executed. The temperature difference is greater than -4°C and the Heater is controlled to remain non-heating.

[0103] It should be noted that for Figure 5 and Figure 6 , are all temperature change data graphs based on time. The upper and lower graphs share the same horizontal axis, but do not share the same vertical axis. The horizontal axis is time t(s). The unit of the upper graph is temperature (℃), and the lower graph contains both power (W) and △T (℃). In addition, for the upper graph, T ESC The curve represents the temperature change curve of ESC. The goal of temperature control mode is to control the temperature difference of ESC within the chip and within the job to reduce; T Heater The curve shows the temperature change curve of the Heater, which affects the ESC temperature.

[0104] For the lower half of the figure, curve L1 represents the output power curve of the thermostat. The period without lines represents that the thermostat has no output and does not heat the heater. The period with lines represents that the heater is heated according to the power output shown on the vertical axis. Curve L2 represents the output mode of the thermostat. When the thermostat outputs in automatic mode, the value is 0, and when the thermostat outputs in temperature control mode, the value is 35. The △T curve represents the curve corresponding to the temperature difference. In addition, the dotted horizontal line is the reference curve, which corresponds to the value of the parameter set in the recipe; the dotted vertical line is the reference curve, which aligns the temperature values ​​at each time point.

[0105] Furthermore, when T PN The temperature is 270℃, the PID parameters are 17, 100 and 100 respectively, and the Figure 2 When the prior art solution shown in FIG. 1 controls the temperature of the ESC, the temperature of the ESC changes as follows: Figure 7 As shown, where T ESC The curve represents the temperature change curve of ESC, T Heater The curve L1 represents the temperature change curve of the heater, and the curve L1 represents the output power curve of the temperature controller. At this time, the temperature difference of a job during temperature control is 20°C, the highest temperature is 281°C, and the lowest temperature is 261°C; the maximum temperature difference of a wafer is 274°C-261°C=13°C.

[0106] When the temperature control mode of the embodiment of the present invention is used, Figure 5 and 6As shown, the maximum temperature difference of a job is 7.5°C, with the highest temperature being 279°C and the lowest temperature being 272.5°C; the maximum temperature difference of a wafer is 279°C-272.5°C=6.5°C. Therefore, the temperature control mode greatly improves the problem of excessive temperature difference of the wafer and improves the uniformity of the deposited film.

[0107] Therefore, in the temperature control mode, the state of the heating device Heater is controlled to stabilize the temperature of the ESC between ESCLow and ESCHigh, and the temperature of the heating device Heater is stabilized between HeaterLow and HeaterHigh, thereby avoiding the phenomenon of wafer temperature accumulation caused by temperature fluctuations of the wafer carrier, improving the problem of excessive temperature difference of the wafer during the process, and improving the uniformity of the deposited film.

[0108] Furthermore, if Figure 4 As shown, when the operator manually exits the temperature control mode or the process chamber is not in the Job environment, the temperature controller controls the process chamber to exit the temperature control mode, and after exiting the temperature control mode, automatically outputs power according to the temperature of the ESC and PID control at this time to restore the temperature of the ESC, ensuring that the ESC does not drop in temperature when there is no process task in the process chamber, so that the process can proceed normally after the next wafer is transferred in, thereby ensuring the process efficiency and process effect of the semiconductor process equipment.

[0109] Embodiment 3

[0110] The embodiment of the present invention also provides a semiconductor process equipment, such as Figure 8 As shown, the semiconductor process equipment 200 may include a process chamber 20, an inlet assembly 20A, an upper electrode assembly 20B and a lower electrode assembly 20C, a pumping assembly 20D and a controller ( Figure 8 The controller includes at least one processor and at least one memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the method of any one of the above embodiments is implemented.

[0111] Exemplarily, the controller can be a host computer or a slave computer. The controller can control the valve opening of the air inlet component 20A to introduce the corresponding process gas into the process chamber 20; the controller can also control the opening and closing degree of the valve of the air inlet component 20A to control the flow rate of the process gas. The controller can also control the exhaust component 20D to exhaust the interior of the process chamber 20, such as controlling the valve opening degree or the exhaust pump speed of the exhaust component 20D, to control the pressure inside the process chamber 20, discharge reaction byproducts, etc.

[0112] The upper electrode assembly 20B may include an RF coil 21, an upper RF power source 23 and an upper matcher 25. The controller is also used to control the upper RF power source 23 to provide RF power to the RF coil 21 through the upper matcher 25, so that the RF coil 21 excites the process gas inside the process chamber 20 to generate plasma.

[0113] The lower electrode assembly 20C may include a wafer carrier 22, a lower RF power supply 24, and a lower matcher 26. The controller is also used to control the lower RF power supply 24 to provide RF power to the wafer carrier 22 through the lower matcher 26 to provide RF bias. The wafer carrier 22 may be, for example, an electrostatic chuck, a mechanical chuck, or a vacuum adsorption chuck.

[0114] In addition, a heating device ( Figure 8 The heating device is provided with a heating wire, and when the controller controls the heating wire to heat, the heating device conducts heat to the wafer carrier 22 through the back-blowing gas path. For details, reference may be made to the prior art, and the embodiments of the present invention will not be described in detail here.

[0115] The semiconductor process equipment 200 of the embodiment of the present invention may be an inductively coupled plasma (ICP) device or a capacitively coupled plasma (CCP) device. The embodiment of the present invention does not limit the type of the semiconductor process equipment 200.

[0116] The semiconductor process equipment provided by the embodiment of the present invention has the same technical features as the temperature control method of the wafer carrier provided by the above embodiment, and can therefore solve the same technical problems and achieve the same technical effects.

[0117] This embodiment also provides a machine-readable storage medium, which stores machine-executable instructions. When the machine-executable instructions are called and executed by a processor, the machine-executable instructions prompt the processor to implement the above-mentioned wafer carrier temperature control method.

[0118] The wafer carrier temperature control method and the computer program product of the semiconductor process equipment provided in the embodiments of the present invention include a computer-readable storage medium storing program code. The instructions included in the program code can be used to execute the methods described in the previous method embodiments. The specific implementation can be found in the method embodiments and will not be repeated here.

[0119] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the system and device described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0120] In addition, in the description of the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0121] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0122] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0123] Finally, it should be noted that the above-described embodiments are only specific implementations of the present invention, which are used to illustrate the technical solutions of the present invention, rather than to limit them. The protection scope of the present invention is not limited thereto. Although the present invention is described in detail with reference to the above-described embodiments, ordinary technicians in the field should understand that any technician familiar with the technical field can still modify the technical solutions recorded in the above-described embodiments within the technical scope disclosed by the present invention, or can easily think of changes, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A method for controlling the temperature of a wafer carrier, wherein a process chamber comprises a heating device and the wafer carrier, and the heating device heats the wafer via the wafer carrier; characterized in that: The method comprises: When the process chamber performs a process task, obtaining a first temperature of the wafer carrying device; If the first temperature satisfies a preset fluctuation condition, controlling the process chamber to perform the process task according to a temperature control mode; In the temperature control mode, the second temperature of the wafer carrier and the heating temperature of the heating device are obtained, and the heating device is controlled according to the second temperature, the heating temperature and a preset temperature threshold so that the temperature of the wafer carrier remains stable; wherein the preset temperature threshold is determined according to the process allowable temperature corresponding to the process task.

2. The method according to claim 1, characterized in that The preset temperature threshold includes: an upper limit value of the bearing temperature corresponding to the wafer bearing device; The step of controlling the heating device according to the second temperature, the heating temperature and a preset temperature threshold comprises: Determining whether the second temperature is less than the upper limit of the bearing temperature; If not, the heating device is controlled to be in a non-heating state.

3. The method according to claim 2, characterized in that The preset temperature threshold also includes: a lower limit value of the heating temperature corresponding to the heating device; The step of controlling the heating device according to the second temperature, the heating temperature and a preset temperature threshold comprises: When the second temperature is less than the upper limit of the bearing temperature, determining whether the heating temperature is greater than the lower limit of the heating temperature; If not, the heating device is controlled to be in a heating state.

4. The method according to claim 3, characterized in that The step of controlling the heating device according to the second temperature, the heating temperature and a preset temperature threshold comprises: When the heating temperature is greater than the lower limit of the heating temperature, determining whether the process chamber is in an idle state; If not, calculate the temperature difference between the second temperature and the heating temperature, and when the temperature difference is greater than a preset error, control the heating device to be in a heating state; or, when the temperature difference is not greater than the preset error, control the heating device to be in a non-heating state.

5. The method according to claim 4, characterized in that The preset temperature threshold also includes: a lower limit value of the bearing temperature corresponding to the wafer bearing device; The step of controlling the heating device according to the second temperature, the heating temperature and a preset temperature threshold comprises: When the process chamber is in the idle state, determining whether the second temperature is greater than the lower limit of the load temperature; If not, the heating device is controlled to be in a heating state.

6. The method according to claim 5, characterized in that The preset temperature threshold also includes: an upper limit value of the heating temperature corresponding to the heating device; The step of controlling the heating device according to the second temperature, the heating temperature and a preset temperature threshold comprises: When the second temperature is greater than the lower limit of the bearing temperature, determining whether the heating temperature is greater than the upper limit of the heating temperature; If so, the heating device is controlled to be in a non-heating state.

7. The method according to claim 6, characterized in that The step of controlling the heating device according to the second temperature, the heating temperature and a preset temperature threshold comprises: If the heating temperature is not greater than the upper limit of the heating temperature, the heating device is controlled to be in a heating state.

8. The method according to claim 1, characterized in that Before the step of the first temperature satisfying a preset fluctuation condition, the method further includes: Obtain a plurality of the first temperatures within a specified time period including the current moment; If the first difference between any two adjacent first temperatures among the plurality of first temperatures is less than a first preset difference threshold, it is determined that the first temperature at the current moment satisfies the preset fluctuation condition.

9. The method according to claim 8, characterized in that Before the step of the first temperature satisfying a preset fluctuation condition, the method further includes: Acquire the first temperature at a current moment, and calculate a second difference between the first temperature at a current moment and the first temperature at a previous moment; If the second difference is less than a second preset difference threshold, it is determined that the first temperature at the current moment meets the preset fluctuation condition.

10. The method according to claim 1, characterized in that Before the step of performing a process task in the process chamber, the method further includes: Obtain a third temperature of the wafer carrier, and if the third temperature satisfies a preset temperature range, control the wafer to enter the process chamber so that the process chamber executes the process task to process the wafer; wherein the preset temperature range is determined according to the process allowable temperature.

11. The method according to claim 10, characterized in that The method further comprises: If the third temperature does not satisfy the preset temperature range, the third temperature is reacquired after a preset interval, and it is determined whether the reacquired third temperature satisfies the preset temperature range; and the number of judgments is obtained. When the number of judgments reaches a preset number, and the third temperature still does not satisfy the preset temperature range, an alarm prompt message is generated to prompt the operator that the process chamber does not meet the conditions for executing the process task.

12. The method according to claim 1, characterized in that The method further comprises: When a closing operation of the temperature control mode is detected, the process chamber is controlled to exit the temperature control mode.

13. The method according to claim 1, characterized in that The method further comprises: When the process chamber completes the process task, the process chamber is controlled to exit the temperature control mode.

14. The method according to claim 12 or 13, characterized in that The method further comprises: When the process chamber exits the temperature control mode, obtaining a fourth temperature of the wafer carrying device at this time; The heating device is controlled to be in a heating state until the fourth temperature reaches the process allowing temperature.

15. A semiconductor process equipment, characterized in that: It comprises a process chamber and a controller; wherein the process chamber comprises a heating device and a wafer carrying device, the wafer carrying device is used to carry the wafer, and the heating device heats the wafer through the wafer carrying device; The controller includes at least one processor and at least one memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the steps of the method described in any one of claims 1 to 14 are implemented.

16. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the method described in any one of claims 1 to 14 are executed.

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