Bottom filling structure, semiconductor chip bearing module and manufacturing method thereof

Abstract

The invention provides an underfill structure, a semiconductor chip carrying module and a manufacturing method thereof. The underfill structure includes an insulating fill material layer and a removable circuit layer. The insulating filling material layer has a plurality of through openings. The removable circuit layer is disposed on the insulating filling material layer and avoids and does not contact the plurality of through openings. The removable circuit layer comprises at least one removable circuit track and a plurality of micro-heaters arranged on the at least one removable circuit track. Each micro heater of the removable circuit layer corresponds to at least one of the plurality of through openings. Therefore, each micro heater can be configured to be used for fixedly connecting the insulating filling material layer between the semiconductor chip group and the circuit substrate through curing, and is used for fixedly connecting each conductive material between the corresponding substrate conductive welding pad and the corresponding chip conductive welding pad through curing.

Description

Technical Field

[0001] The present invention relates to a bottom filling structure, in particular to a bottom filling structure with a heating function, a semiconductor chip carrying module using the bottom filling structure, and a manufacturing method of the semiconductor chip carrying module using the bottom filling structure. Background Art

[0002] The underfiller is filled to the bottom of the flip chip through capillary action and then heated to solidify, thereby improving the reliability of the chip solder joints. Summary of the invention

[0003] The problem to be improved or solved by the present invention is to provide a bottom filling structure with a heating function, a semiconductor chip carrier module and a manufacturing method thereof in view of the deficiencies in the prior art.

[0004] In order to improve or solve the above-mentioned problems, one of the technical means adopted by the present invention is to provide a bottom filling structure with a heating function, which includes: an insulating filling material layer and a removable circuit layer. The insulating filling material layer has a plurality of through openings. The removable circuit layer is arranged on the insulating filling material layer and avoids and does not contact the plurality of through openings. The removable circuit layer includes at least one removable circuit track and a plurality of microheaters arranged on the at least one removable circuit track; each microheater of the removable circuit layer corresponds to at least one of the plurality of through openings.

[0005] In order to improve or solve the above-mentioned problems, another technical means adopted by the present invention is to provide a semiconductor chip carrier module, which includes: a circuit substrate, a bottom filling structure and a semiconductor chip group. The circuit substrate has a plurality of substrate conductive pads. The bottom filling structure is arranged on the circuit substrate. The semiconductor chip group includes a plurality of semiconductor chips, and the plurality of semiconductor chips are arranged on the bottom filling structure and electrically connected to the circuit substrate. Wherein, the bottom filling structure includes an insulating filling material layer and a removable circuit layer, the insulating filling material layer has a plurality of through openings, and the removable circuit layer is arranged on the insulating filling material layer and avoids and does not contact the plurality of through openings; wherein the removable circuit layer includes at least one removable circuit track and a plurality of microheaters arranged on the at least one removable circuit track; wherein each microheater of the removable circuit layer corresponds to at least one of the plurality of through openings; wherein, when the at least one removable circuit track is removed, the plurality of microheaters carried by the at least one removable circuit track are removed together with the at least one removable circuit track.

[0006] In order to improve or solve the above-mentioned problems, another technical means adopted by the present invention is to provide a method for manufacturing a semiconductor chip carrier module, which includes: providing a bottom filling structure, the bottom filling structure includes an insulating filling material layer and a removable circuit layer, the insulating filling material layer has a plurality of through openings, the removable circuit layer is arranged on the insulating filling material layer, and the removable circuit layer includes at least one removable circuit track and a plurality of micro heaters arranged on the at least one removable circuit track; arranging the bottom filling structure on a circuit substrate pre-provided with a plurality of substrate conductive pads; The sheet is arranged on the bottom filling structure, and at least two chip conductive pads of each semiconductor chip are electrically connected to the corresponding two substrate conductive pads of the circuit substrate through the corresponding two conductive materials; multiple microheaters of the removable circuit layer are turned on to heat the insulating filling material layer and the multiple conductive materials, thereby making the multiple semiconductor chips fixed on the circuit substrate through the insulating filling material layer and the multiple conductive materials; and, at least one removable circuit track is removed, thereby making the multiple microheaters carried by the at least one removable circuit track be removed together with the at least one removable circuit track.

[0007] One of the beneficial effects of the present invention is that the present invention provides a bottom filling structure with a heating function, which can be configured to "fix the insulating filling material layer between the semiconductor chip group (multiple semiconductor chips) and the circuit substrate by curing" and "fix each conductive material between the corresponding substrate conductive pad and the corresponding chip conductive pad by curing" through the technical solutions of "the insulating filling material layer has multiple through openings", "the removable circuit layer is arranged on the insulating filling material layer and avoids and does not contact the multiple through openings" and "the removable circuit layer includes at least one removable circuit track and multiple microheaters arranged on at least one removable circuit track".

[0008] Another beneficial effect of the present invention is that the semiconductor chip carrier module provided by the present invention can be configured to "fix the insulating filling material layer between the semiconductor chip group (multiple semiconductor chips) and the circuit substrate by curing" and "fix each conductive material between the corresponding substrate conductive pad and the corresponding chip conductive pad by curing" through the technical solutions of "the insulating filling material layer has multiple through openings", "the removable circuit layer is arranged on the insulating filling material layer and avoids and does not contact the multiple through openings" and "the removable circuit layer includes at least one removable circuit track and multiple microheaters arranged on at least one removable circuit track". It is worth noting that when at least one removable circuit track is removed, the multiple microheaters carried by the at least one removable circuit track can be removed together with the at least one removable circuit track.

[0009] Another beneficial effect of the present invention is that the manufacturing method of a semiconductor chip carrier module provided by the present invention can be configured to "fix the insulating filling material layer between the semiconductor chip group (multiple semiconductor chips) and the circuit substrate by curing" and "fix each conductive material between the corresponding substrate conductive pad and the corresponding chip conductive pad by curing" through the technical scheme of "providing a bottom filling structure, the bottom filling structure including an insulating filling material layer and a removable circuit layer, and the removable circuit layer including at least one removable circuit track and a plurality of microheaters arranged on the at least one removable circuit track", "setting the bottom filling structure on a circuit substrate pre-provided with a plurality of substrate conductive pads", "setting a plurality of semiconductor chips on the bottom filling structure" and "turning on the plurality of microheaters of the removable circuit layer to heat the insulating filling material layer and the plurality of conductive materials". It is worth noting that when at least one removable circuit track is removed, the plurality of microheaters carried by the at least one removable circuit track can be removed together with the at least one removable circuit track.

[0010] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and description and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 The present invention is a flowchart of a method for manufacturing a semiconductor chip carrier module according to a first embodiment of the present invention.

[0012] Figure 2The cross-sectional view of an initial insulating filling material including an upper surface protection layer and a lower surface protection layer provided in the first embodiment of the present invention is shown.

[0013] Figure 3 It is a cross-sectional schematic diagram of an insulating filling material layer provided by the first embodiment of the present invention.

[0014] Figure 4 It is a cross-sectional schematic diagram of a removable circuit layer provided by the first embodiment of the present invention.

[0015] Figure 5 It is a cross-sectional schematic diagram of step S100 (B) of the method for manufacturing a semiconductor chip carrier module provided in the first embodiment of the present invention.

[0016] Figure 6 It is a cross-sectional schematic diagram of step S100 of the method for manufacturing a semiconductor chip carrier module provided by the first embodiment of the present invention.

[0017] Figure 7 It is a cross-sectional schematic diagram of step S102 of the method for manufacturing a semiconductor chip carrying module provided by the first embodiment of the present invention.

[0018] Figure 8 It is a cross-sectional schematic diagram of step S104 and step S106 of the method for manufacturing a semiconductor chip carrier module provided in the first embodiment of the present invention.

[0019] Fig. 9 It is a cross-sectional schematic diagram of step S108 of the method for manufacturing a semiconductor chip carrier module provided by the first embodiment of the present invention.

[0020] Fig.10 It is a cross-sectional schematic diagram of a semiconductor chip carrying module provided by a second embodiment of the present invention. DETAILED DESCRIPTION

[0021] The following is an explanation of the implementation methods of the "bottom filling structure with heating function, semiconductor chip carrier module and its manufacturing method" disclosed in the present invention through specific specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. In addition, it should be stated in advance that the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual sizes. The following embodiments will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

[0022] First embodiment

[0023] See also Figures 1 to 10 As shown, the first embodiment of the present invention provides a method for manufacturing a semiconductor chip carrier module, which includes: first, Figure 1 and Figure 6 As shown, a bottom filling structure F (or a bottom filling structure F with a heating function) is provided, the bottom filling structure F includes an insulating filling material layer 1 and a removable circuit layer 2, the insulating filling material layer 1 has a plurality of through openings 100, the removable circuit layer 2 is disposed on the insulating filling material layer 1, and the removable circuit layer 2 includes at least one removable circuit track 21 and a plurality of micro heaters 22 disposed on the at least one removable circuit track 21 (step S100); then, in conjunction with Figure 1 , Figure 6 and Figure 7 As shown, the bottom filling structure F is disposed on a circuit substrate P provided with a plurality of substrate conductive pads P100 in advance (step S102); then, Figure 1 , Figure 7 and Figure 8 As shown, a plurality of semiconductor chips C1 are arranged on the bottom filling structure F, and at least two chip conductive pads C100 of each semiconductor chip C1 are respectively electrically connected to two corresponding substrate conductive pads P100 of the circuit substrate P through two corresponding conductive materials B (step S104); next, Figure 1 and Figure 8 As shown, the multiple micro-heaters 22 of the removable circuit layer 2 are turned on (or the multiple micro-heaters 22 of the removable circuit layer 2 are driven to generate heat energy) to heat the insulating filling material layer 1 and the multiple conductive materials B, so that the multiple semiconductor chips C1 are fixed on the circuit substrate P through the insulating filling material layer 1 and the multiple conductive materials B (step S106); then, Figure 1 , Fig. 9 and Fig.10 As shown, at least one removable circuit trace 21 is removed, thereby causing a plurality of micro-heaters 22 carried by the at least one removable circuit trace 21 to be removed together with the at least one removable circuit trace 21 (step S108), thereby completing the production of a semiconductor chip carrier module M, wherein the semiconductor chip carrier module M includes a circuit substrate P, a bottom filling structure F that does not include a removable circuit layer 2, and a semiconductor chip group C.

[0024] For example, with Figures 1 to 6 As shown, the step S100 of providing the bottom filling structure F further includes: first, matching Figure 1 , Figure 3 and Figure 4 As shown, an insulating filling material layer 1 and a removable circuit layer 2 are provided (step S100 (A)); then, Figure 1 , Figure 5 and Figure 6 As shown, the removable circuit layer 2 and the insulating filling material layer 1 are attached to each other (step S100 (B)). Further, the step S100 (A) of providing the insulating filling material layer 1 further includes: Figure 1 , Figure 2 and Figure 3 As shown, an initial insulating filling material 10 (such as silicone, epoxy resin or any type of insulating filling material) including an upper surface protective layer 11 and a lower surface protective layer 12 is provided (such as Figure 2 Then, a plurality of through openings 100 are generated to penetrate the initial insulating filling material 10 (as shown in FIG. Figure 3 In addition, the step S100 (A) of providing the removable circuit layer 2 further includes: Figure 1 and Figure 4 As shown, a removable circuit layer 2 including at least one removable circuit track 21 and a plurality of micro heaters 22 is provided on a peelable layer T100 of a temporary carrier substrate T. In addition, the step S100 (B) of bonding the removable circuit layer 2 and the insulating filling material layer 1 together further includes: Figure 1 , Figure 3 , Figure 5 and Figure 6 , remove one of the upper surface protection layer 11 and the lower surface protection layer 12 (such as Figure 5 As shown, the lower surface protective layer 12 is removed, and then the removable circuit layer 2 is attached to the insulating filling material layer 1 (or the insulating filling material layer 1 is attached to the removable circuit layer 2, as shown in FIG. Figure 5 Then, the temporary carrier substrate T with the peelable layer T100 and the other of the upper surface protection layer 11 and the lower surface protection layer 12 are removed (as shown in FIG. Figure 6 As shown, the upper surface protection layer 11 is removed. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0025] It is worth noting that, for example, Figure 1 and Figure 7 As shown, in step S104 of placing a plurality of semiconductor chips C1 on the bottom filling structure F, the plurality of semiconductor chips C1 may be placed on the bottom filling structure F by being carried by a chip carrier substrate G (eg, a light-transmitting substrate or a non-light-transmitting substrate). Figure 1 , Fig. 9 and Fig.10As shown, in step S108 of removing at least one removable circuit trace 21, at least one removable circuit trace 21 can be removed from the insulating filling material layer 1 by a material removal module R (for example, plasma, solvent or semiconductor processing provided by the material removal module R can be used). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0026] For example, in another feasible embodiment, step S100 of providing a bottom filling structure F further includes: providing an insulating filling material layer 1 (step S100 (C), one of the upper surface protective layer 11 and the lower surface protective layer 12 can be removed in advance), and then generating a removable circuit layer 2 on the insulating filling material layer 1 (step S100 (D), the other of the upper surface protective layer 11 and the lower surface protective layer 12 can be removed subsequently). That is to say, according to different needs, the insulating filling material layer 1 and the removable circuit layer 2 can be manufactured separately and then bonded together (that is, the removable circuit layer 2 can be set on the insulating filling material layer 1 by "direct attachment"), or the removable circuit layer 2 can be directly generated on the insulating filling material layer 1 by any forming processing method (that is, the removable circuit layer 2 can be set on the insulating filling material layer 1 by "subsequent processing"), thereby eliminating the step of bonding the insulating filling material layer 1 and the removable circuit layer 2 (that is, the alignment and bonding steps of the insulating filling material layer 1 and the removable circuit layer 2 can be saved). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0027] For example, if Figure 6 As shown, the material used for the insulating filling material layer 1 at least includes silicone, epoxy or any material that can be cured by heating, and each micro heater 22 can be a heating metal material (such as silver, copper, aluminum, ceramic material), a heater circuit, a heater chip or any heating structure that can provide thermal energy. It is worth noting that, Figure 6 As shown, at least one removable circuit trace 21 of the removable circuit layer 2 can extend continuously and partially surround each through opening 100, and at least one removable circuit trace 21 of the removable circuit layer 2 and the plurality of microheaters 22 will not contact any through opening 100, and the removable circuit layer 2 is exposed outside the insulating filling material layer 1 (that is, the plurality of microheaters 22 will not contact the insulating filling material layer 1). In addition, as Figure 8As shown, the bottom filling structure F can be configured as an under filler, so that the bottom filling structure F can be disposed between a circuit substrate P pre-provided with a plurality of substrate conductive pads P100 and a semiconductor chip group C including a plurality of semiconductor chips C1. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0028] For example, with Figure 7 and Figure 8 As shown, when the bottom filling structure F and the semiconductor chip group C are stacked on the circuit substrate P in sequence, a plurality of conductive materials B (such as solder balls, solder paste or any kind of conductive material) can be disposed between the circuit substrate P and the semiconductor chip group C and respectively accommodated in a plurality of through openings 100, and at least two chip conductive pads C100 of each semiconductor chip C1 can be respectively electrically connected to the corresponding two substrate conductive pads P100 of the circuit substrate P through the corresponding two conductive materials B "located in the corresponding two through openings 100". In addition, as Figure 8 As shown, when the bottom filling structure F and the semiconductor chip group C are sequentially stacked on the circuit substrate P, each micro heater 22 can be configured to "transfer heat energy to the insulating filling material layer 1" to cure the insulating filling material layer 1, thereby fixing the insulating filling material layer 1 between the semiconductor chip group C and the circuit substrate P. In addition, as Figure 8 As shown, when the bottom filling structure F and the semiconductor chip group C are stacked on the circuit substrate P in sequence, each micro heater 22 can be configured to "transfer heat energy to the corresponding at least one conductive material B" to solidify the at least one conductive material B, thereby fixing the at least one conductive material B between the corresponding substrate conductive pad P100 and the corresponding chip conductive pad C100. It is worth noting that Figure 8 As shown, when the bottom filling structure F and the semiconductor chip group C are stacked sequentially on the circuit substrate P, at least one removable circuit trace 21 of the removable circuit layer 2 and the plurality of micro heaters 22 will not contact any semiconductor chip C1. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0029] In a method for manufacturing a semiconductor chip carrier module provided in the first embodiment of the present invention, each microheater 22 can be configured to "fix the insulating filling material layer 1 between the semiconductor chip group C (multiple semiconductor chips C1) and the circuit substrate P by curing" and "fix each conductive material B between the corresponding substrate conductive pad P100 and the corresponding chip conductive pad C100 by curing", so as to improve the welding strength (or impact resistance) of the conductive material B and the service life of the semiconductor chip C1. It is worth noting that when at least one removable circuit track 21 is removed, the multiple microheaters 22 carried by the at least one removable circuit track 21 can be removed together with the at least one removable circuit track 21.

[0030] Second embodiment

[0031] See also Figure 8 , Fig. 9 and Fig.10 As shown, the second embodiment of the present invention provides a semiconductor chip carrier module M, which includes a circuit substrate P, a bottom filling structure F and a semiconductor chip group C. Specifically, the circuit substrate P has a plurality of substrate conductive pads P100, and the bottom filling structure F is disposed on the circuit substrate P. Furthermore, the semiconductor chip group C includes a plurality of semiconductor chips C1, and the plurality of semiconductor chips C1 are disposed on the bottom filling structure F and are electrically connected to the circuit substrate P. In addition, the bottom filling structure F includes an insulating filling material layer 1 and a removable circuit layer 2, the insulating filling material layer 1 has a plurality of through openings 100, and the removable circuit layer 2 is disposed on the insulating filling material layer 1 and avoids and does not contact the plurality of through openings 100. In addition, the removable circuit layer 2 includes at least one removable circuit track 21 and a plurality of micro-heaters 22 disposed on at least one removable circuit track 21, and each micro-heater 22 of the removable circuit layer 2 corresponds to at least one of the plurality of through openings 100. It is worth noting that, as Figure 8 As shown, each micro-heater 22 can be configured to "fix the insulating filling material layer 1 between the semiconductor chip group C (multiple semiconductor chips C1) and the circuit substrate P by curing" and "fix each conductive material B between the corresponding substrate conductive pad P100 and the corresponding chip conductive pad C100 by curing", so as to improve the welding strength of the conductive material B and the service life of the semiconductor chip C1.

[0032] For example, with Fig. 9 and Fig.10As shown, when at least one removable circuit track 21 is removed, the multiple micro-heaters 22 carried by at least one removable circuit track 21 can be removed together with the at least one removable circuit track 21, so the bottom filling structure F provided in the second embodiment of the present invention can be applied to "a method for manufacturing a semiconductor chip carrier module provided in the first embodiment of the present invention" or "any product that needs to use the bottom filling structure F to improve the structural strength (or impact resistance) of the solder joint and the service life of the chip". However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0033] Third embodiment

[0034] See also Figure 6 and Figure 8 As shown, the third embodiment of the present invention provides a bottom filling structure F with a heating function, which includes an insulating filling material layer 1 and a removable circuit layer 2. More specifically, the insulating filling material layer 1 has a plurality of through openings 100, and the removable circuit layer 2 is disposed on the insulating filling material layer 1 and avoids and does not contact the plurality of through openings 100. In addition, the removable circuit layer 2 includes at least one removable circuit track 21 and a plurality of micro-heaters 22 disposed on the at least one removable circuit track 21, and each micro-heater 22 of the removable circuit layer 2 corresponds to at least one of the plurality of through openings 100. It is worth noting that, as Figure 8 As shown, each micro-heater 22 can be configured to "fix the insulating filling material layer 1 between the semiconductor chip group C (multiple semiconductor chips C1) and the circuit substrate P by curing" and "fix each conductive material B between the corresponding substrate conductive pad P100 and the corresponding chip conductive pad C100 by curing", so as to improve the welding strength of the conductive material B and the service life of the semiconductor chip C1.

[0035] For example, the bottom filling structure F provided in the third embodiment of the present invention can be applied to "a method for manufacturing a semiconductor chip carrier module provided in the first embodiment of the present invention", "a semiconductor chip carrier module M provided in the second embodiment of the present invention" or "any product that needs to use the bottom filling structure F to improve the structural strength (or impact resistance) of the solder joint and the service life of the chip". However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0036] Advantageous Effects of Embodiments

[0037] One of the beneficial effects of the present invention is that the bottom filling structure F with heating function provided by the present invention can be configured to "fix the insulating filling material layer 1 between the semiconductor chip group C (multiple semiconductor chips C1) and the circuit substrate P by curing" and "fix each conductive material B between the corresponding substrate conductive pad P100 and the corresponding chip conductive pad C100 by curing" through the technical solutions of "the insulating filling material layer 1 has multiple through openings 100", "the removable circuit layer 2 is arranged on the insulating filling material layer 1 and avoids and does not contact the multiple through openings 100" and "the removable circuit layer 2 includes at least one removable circuit track 21 and multiple micro-heaters 22 arranged on at least one removable circuit track 21".

[0038] Another beneficial effect of the present invention is that the semiconductor chip carrier module M provided by the present invention can be configured to be used for "fixing the insulating filling material layer 1 between the semiconductor chip group C (multiple semiconductor chips C1) and the circuit substrate P by curing" and "fixing each conductive material B between the corresponding substrate conductive pad P100 and the corresponding chip conductive pad C100 by curing" through the technical solutions of "the insulating filling material layer 1 has a plurality of through openings 100", "the removable circuit layer 2 is arranged on the insulating filling material layer 1 and avoids and does not contact the plurality of through openings 100" and "the removable circuit layer 2 includes at least one removable circuit track 21 and a plurality of microheaters 22 arranged on the at least one removable circuit track 21". It is worth noting that when at least one removable circuit track 21 is removed, the plurality of microheaters 22 carried by the at least one removable circuit track 21 can be removed together with the at least one removable circuit track 21.

[0039] Another beneficial effect of the present invention is that the manufacturing method of a semiconductor chip carrier module provided by the present invention can be configured to "fix the insulating filling material layer 1 between the semiconductor chip group C (multiple semiconductor chips C1) and the circuit substrate P by curing" and "fix each conductive material B between the corresponding substrate conductive pad P100 and the corresponding chip conductive pad C100 by curing" through the technical scheme of "providing a bottom filling structure F, the bottom filling structure F including an insulating filling material layer 1 and a removable circuit layer 2, and the removable circuit layer 2 including at least one removable circuit track 21 and a plurality of microheaters 22 arranged on at least one removable circuit track 21", "setting the bottom filling structure F on a circuit substrate P pre-provided with a plurality of substrate conductive pads P100", "setting a plurality of semiconductor chips C1 on the bottom filling structure F" and "turning on the plurality of microheaters 22 of the removable circuit layer 2 to heat the insulating filling material layer 1 and the plurality of conductive materials B". It is worth noting that when the at least one removable circuit trace 21 is removed, the plurality of micro-heaters 22 carried by the at least one removable circuit trace 21 can be removed together with the at least one removable circuit trace 21 .

[0040] The contents disclosed above are only optional feasible embodiments of the present invention, and are not intended to limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention description and drawings are included in the protection scope of the claims of the present invention.

Claims

1. A bottom filling structure with heating function, characterized in that: The bottom filling structure with heating function comprises: an insulating filling material layer, the insulating filling material layer having a plurality of through openings; and a removable circuit layer, the removable circuit layer being disposed on the insulating filling material layer and avoiding and not contacting the plurality of through openings; Wherein, the removable circuit layer comprises at least one removable circuit track and a plurality of micro-heaters arranged on the at least one removable circuit track; Wherein, each of the micro-heaters of the removable circuit layer corresponds to at least one of the plurality of through openings.

2. The bottom filling structure with heating function according to claim 1, characterized in that: in, The material used for the insulating filling material layer at least includes silica gel or epoxy resin; wherein the bottom filling structure is configured to serve as a bottom filling agent, so that the bottom filling structure is disposed between a circuit substrate pre-provided with a plurality of substrate conductive pads and a semiconductor chip group including a plurality of semiconductor chips; Wherein, when the bottom filling structure and the semiconductor chip group are sequentially stacked on the circuit substrate, a plurality of conductive materials are disposed between the circuit substrate and the semiconductor chip group and are respectively accommodated in a plurality of the through openings, and at least two chip conductive pads of each semiconductor chip are respectively electrically connected to two corresponding substrate conductive pads of the circuit substrate through two corresponding conductive materials located in two corresponding through openings; When the bottom filling structure and the semiconductor chip group are stacked on the circuit substrate in sequence, each of the micro-heaters is configured to transfer heat energy to the insulating filling material layer to solidify the insulating filling material layer, thereby fixing the insulating filling material layer between the semiconductor chip group and the circuit substrate; Wherein, when the bottom filling structure and the semiconductor chip group are sequentially stacked on the circuit substrate, each of the micro-heaters is configured to transfer heat energy to the corresponding at least one conductive material to solidify the at least one conductive material, thereby fixing the at least one conductive material between the corresponding substrate conductive pad and the corresponding chip conductive pad; wherein the at least one removable circuit trace of the removable circuit layer extends continuously and partially surrounds each of the through openings; Wherein, the at least one removable circuit trace of the removable circuit layer and the plurality of micro-heaters will not contact any of the through openings, and the plurality of micro-heaters will not contact the insulating filling material layer; Wherein, when the bottom filling structure and the semiconductor chip group are stacked on the circuit substrate in sequence, the at least one removable circuit trace of the removable circuit layer and the plurality of micro-heaters will not contact any of the semiconductor chips; Wherein, each of the micro-heaters is a heating metal material, a heater circuit or a heater chip; Wherein, the removable circuit layer is exposed outside the insulating filling material layer; Wherein, the removable circuit layer is disposed on the insulating filling material layer through subsequent processing or direct attachment.

3. The bottom filling structure with heating function according to claim 1, characterized in that: in, The material used for the insulating filling material layer at least includes silica gel or epoxy resin; wherein the bottom filling structure is configured to serve as a bottom filler; wherein the at least one removable circuit trace of the removable circuit layer extends continuously and partially surrounds each of the through openings; Wherein, the at least one removable circuit trace of the removable circuit layer and the plurality of micro-heaters will not contact any of the through openings, and the plurality of micro-heaters will not contact the insulating filling material layer; Wherein, each of the micro-heaters is a heating metal material, a heater circuit or a heater chip; Wherein, the removable circuit layer is exposed outside the insulating filling material layer; Wherein, the removable circuit layer is disposed on the insulating filling material layer through subsequent processing or direct attachment.

4. A semiconductor chip carrier module, characterized in that: The semiconductor chip carrying module comprises: A circuit substrate having a plurality of substrate conductive pads; an underfill structure, the underfill structure being disposed on the circuit substrate; and a semiconductor chip group, the semiconductor chip group comprising a plurality of semiconductor chips, the plurality of semiconductor chips being disposed on the bottom filling structure and electrically connected to the circuit substrate; The bottom filling structure includes an insulating filling material layer and a removable circuit layer, the insulating filling material layer has a plurality of through openings, and the removable circuit layer is disposed on the insulating filling material layer and avoids contacting the plurality of through openings; Wherein, the removable circuit layer comprises at least one removable circuit track and a plurality of micro-heaters arranged on the at least one removable circuit track; Wherein, each of the micro-heaters of the removable circuit layer corresponds to at least one of the plurality of through openings; When the at least one removable circuit track is removed, the plurality of micro-heaters carried by the at least one removable circuit track are removed together with the at least one removable circuit track.

5. The semiconductor chip carrier module according to claim 4, characterized in that: in, The material used for the insulating filling material layer at least includes silica gel or epoxy resin; The bottom filling structure is configured to serve as a bottom filling agent, so that the bottom filling structure is disposed between the circuit substrate and the semiconductor chip group; Wherein, when the bottom filling structure and the semiconductor chip group are sequentially stacked on the circuit substrate, a plurality of conductive materials are disposed between the circuit substrate and the semiconductor chip group and are respectively accommodated in a plurality of the through openings, and at least two chip conductive pads of each semiconductor chip are respectively electrically connected to corresponding two substrate conductive pads of the circuit substrate through corresponding two conductive materials located in corresponding two through openings; When the bottom filling structure and the semiconductor chip group are stacked on the circuit substrate in sequence, each of the micro-heaters is configured to transfer heat energy to the insulating filling material layer to solidify the insulating filling material layer, thereby fixing the insulating filling material layer between the semiconductor chip group and the circuit substrate; Wherein, when the bottom filling structure and the semiconductor chip group are sequentially stacked on the circuit substrate, each of the micro-heaters is configured to transfer heat energy to the corresponding at least one conductive material to solidify the at least one conductive material, thereby fixing the at least one conductive material between the corresponding substrate conductive pad and the corresponding chip conductive pad; wherein the at least one removable circuit trace of the removable circuit layer extends continuously and partially surrounds each of the through openings; Wherein, the at least one removable circuit trace of the removable circuit layer and the plurality of micro-heaters will not contact any of the through openings, and the plurality of micro-heaters will not contact the insulating filling material layer; Wherein, when the bottom filling structure and the semiconductor chip group are stacked on the circuit substrate in sequence, the at least one removable circuit trace of the removable circuit layer and the plurality of micro-heaters will not contact any of the semiconductor chips; Wherein, each of the micro-heaters is a heating metal material, a heater circuit or a heater chip; Wherein, the removable circuit layer is exposed outside the insulating filling material layer; Wherein, the removable circuit layer is disposed on the insulating filling material layer through subsequent processing or direct attachment.

6. A method for manufacturing a semiconductor chip carrier module, characterized in that: The manufacturing method of the semiconductor chip carrier module comprises: A bottom filling structure is provided, the bottom filling structure comprising an insulating filling material layer and a removable circuit layer, the insulating filling material layer having a plurality of through openings, the removable circuit layer being disposed on the insulating filling material layer, and the removable circuit layer comprising at least one removable circuit track and a plurality of micro heaters disposed on the at least one removable circuit track; The bottom filling structure is arranged on a circuit substrate provided with a plurality of substrate conductive pads in advance; Disposing a plurality of semiconductor chips on the bottom filling structure, wherein at least two chip conductive pads of each semiconductor chip are electrically connected to two corresponding substrate conductive pads of the circuit substrate through two corresponding conductive materials; Turning on the plurality of micro-heaters of the removable circuit layer to heat the insulating filling material layer and the plurality of conductive materials, thereby allowing the plurality of semiconductor chips to be fixedly bonded to the circuit substrate through the insulating filling material layer and the plurality of conductive materials; and The at least one removable circuit track is removed, so that the plurality of micro-heaters carried by the at least one removable circuit track are removed together with the at least one removable circuit track.

7. The method for manufacturing a semiconductor chip carrier module according to claim 6, characterized in that: in, The step of providing the bottom filling structure further includes: providing the insulating filling material layer and the removable circuit layer, and then laminating the removable circuit layer and the insulating filling material layer together; The step of providing the insulating filling material layer further includes: providing an initial insulating filling material including an upper surface protection layer and a lower surface protection layer, and then generating a plurality of through openings to penetrate the insulating filling material; The step of attaching the removable circuit layer and the insulating filling material layer to each other further comprises: removing one of the upper surface protection layer and the lower surface protection layer, and then attaching the removable circuit layer to the insulating filling material layer, and then removing the other of the upper surface protection layer and the lower surface protection layer; Wherein, in the step of disposing the plurality of semiconductor chips on the bottom filling structure, the plurality of semiconductor chips are disposed on the bottom filling structure by being supported by a chip supporting substrate; Wherein, in the step of removing the at least one removable circuit trace, the at least one removable circuit trace is removed from the insulating filling material layer by a material removal module.

8. The method for manufacturing a semiconductor chip carrier module according to claim 6, characterized in that: in, The step of providing the bottom filling structure further includes: providing the insulating filling material layer, and then generating the removable circuit layer on the insulating filling material layer; Wherein, in the step of disposing the plurality of semiconductor chips on the bottom filling structure, the plurality of semiconductor chips are disposed on the bottom filling structure by being supported by a chip supporting substrate; Wherein, in the step of removing the at least one removable circuit trace, the at least one removable circuit trace is removed from the insulating filling material layer by a material removal module.

9. The method for manufacturing a semiconductor chip carrier module according to claim 6, characterized in that: in, The material used for the insulating filling material layer at least includes silica gel or epoxy resin; The bottom filling structure is configured to serve as a bottom filling agent, so that the bottom filling structure is disposed between the circuit substrate and a semiconductor chip group including a plurality of the semiconductor chips; Wherein, when the bottom filling structure and the semiconductor chip group are sequentially stacked on the circuit substrate, a plurality of the conductive materials are disposed between the circuit substrate and the semiconductor chip group and are respectively accommodated in a plurality of the through openings, and at least two chip conductive pads of each semiconductor chip are respectively electrically connected to corresponding two substrate conductive pads of the circuit substrate through corresponding two conductive materials located in corresponding two through openings; When the bottom filling structure and the semiconductor chip group are stacked on the circuit substrate in sequence, each of the micro-heaters is configured to transfer heat energy to the insulating filling material layer to solidify the insulating filling material layer, thereby fixing the insulating filling material layer between the semiconductor chip group and the circuit substrate; Wherein, when the bottom filling structure and the semiconductor chip group are sequentially stacked on the circuit substrate, each of the micro-heaters is configured to transfer heat energy to the corresponding at least one conductive material to solidify the at least one conductive material, thereby fixing the at least one conductive material between the corresponding substrate conductive pad and the corresponding chip conductive pad; wherein the at least one removable circuit trace of the removable circuit layer extends continuously and partially surrounds each of the through openings; Wherein, the at least one removable circuit trace of the removable circuit layer and the plurality of micro-heaters will not contact any of the through openings, and the plurality of micro-heaters will not contact the insulating filling material layer; Wherein, when the bottom filling structure and the semiconductor chip group are stacked on the circuit substrate in sequence, the at least one removable circuit trace of the removable circuit layer and the plurality of micro-heaters will not contact any of the semiconductor chips; Wherein, each of the micro-heaters is a heating metal material, a heater circuit or a heater chip; Wherein, the removable circuit layer is exposed outside the insulating filling material layer; Wherein, the removable circuit layer is disposed on the insulating filling material layer through subsequent processing or direct attachment.

10. A semiconductor chip carrier module manufactured according to the manufacturing method according to claim 6, characterized in that: The semiconductor chip carrying module includes the circuit substrate, the bottom filling structure and a plurality of the semiconductor chips, and the bottom filling structure does not include the removable circuit layer.

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