Electromagnetic structure, electromagnetic assembly, antenna, electronic equipment and communication equipment

Abstract

The invention relates to the technical field of communication, and discloses an electromagnetic structure, an electromagnetic assembly, an antenna, electronic equipment and communication equipment. Wherein the electromagnetic structure comprises a first metal layer, a dielectric layer and a second metal layer which are stacked in sequence, one of the first metal layer and the second metal layer is used for feeding, and the other one is used for grounding. The first metal layer comprises a plurality of basic units arranged periodically. The electrical size of the basic units is sub-wavelength, each basic unit comprises a boundary line, and the basic units are at least partially hollowed out in an area surrounded by the boundary lines. The electromagnetic structure is non-resonant etching, propagation of electromagnetic waves is not changed, and the electrical size of the basic unit is relatively small. In a basic unit in the electromagnetic structure, internal metal is hollowed out, and a boundary line is reserved. That is, the current bearing surface is reduced by reducing the metal in the area surrounded by the boundary line, and the internal magnetic field of the basic unit is weakened. In addition, the basic units are periodically arranged, and control over an electromagnetic field of the electromagnetic structure is achieved.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to an electromagnetic structure, an electromagnetic component, an antenna, an electronic device and a communication device. Background Art

[0002] At present, the demand for miniaturization and broadband antennas can be achieved by increasing the magnetic permeability of the dielectric material in the antenna. However, the existing high-permeability dielectric materials have low operating frequencies and large magnetic losses, which makes them difficult to apply to antenna design.

[0003] Artificial magnetic material (also known as artificial structural magnetic material) is an artificial metamaterial, which is specifically composed of specific basic units arranged periodically. The electromagnetic structure using artificial magnetic material can expand the magnetoelectric properties and improve the magnetic permeability without increasing the loss. Figure 1 (a) shows a module schematic diagram of a mobile phone M. Figure 1 (b) shows a structural schematic diagram of an electromagnetic structure S. Combining Figures 1 (a) and 1 (b), it can be seen that the mobile phone M includes an antenna A, and the electromagnetic structure S in the antenna A includes a first metal layer 10, a dielectric layer 20, and a second metal layer 30 stacked in sequence. Among them, one of the first metal layer 10 and the second metal layer 30 is used for feeding, and the other is used for grounding. The dielectric layer 20 can be a conventional medium or air. The artificial magnetic material is formed on the first metal layer 10 and / or the second metal layer 30. As shown in Figure 1 (b), D1 is the direction of the magnetic field, D2 is the direction of the electric field, and D3 is the direction of electromagnetic wave transmission. Based on this, how to design artificial magnetic materials in antennas has become a technical problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0004] In view of this, the embodiments of the present application provide an electromagnetic structure, an electromagnetic component, an antenna, an electronic device and a communication device. Among them, the electromagnetic structure includes a first metal layer, a dielectric layer and a second metal layer stacked in sequence, one of the first metal layer and the second metal layer is used for feeding, and the other is used for grounding. The first metal layer includes a plurality of basic units arranged periodically. The electrical size of the basic unit is sub-wavelength, each basic unit includes a boundary line, and the basic unit is at least partially hollowed out in the area surrounded by the boundary line. The above-mentioned electromagnetic structure is non-resonant etching, does not change the propagation of electromagnetic waves, and has a relatively small electrical size. The basic unit in the electromagnetic structure hollows out the internal metal and retains the boundary line. That is, by reducing the metal in the area surrounded by the boundary line, the current carrying surface is reduced, and the internal magnetic field of the basic unit is weakened. In addition, the basic units are arranged periodically to achieve control of the electromagnetic field of the electromagnetic structure.

[0005] The first aspect of the present application provides an electromagnetic structure, wherein the electromagnetic structure includes a first metal layer, a dielectric layer, and a second metal layer stacked in sequence along a stacking direction. One of the first metal layer and the second metal layer is used for power feeding, and the other is used for grounding. The first metal layer includes a plurality of basic units periodically arranged in an arrangement plane. The electrical size of the basic unit is sub-wavelength. Each basic unit includes a boundary line, and the basic unit is at least partially hollowed out in the area surrounded by the boundary line. The arrangement plane is perpendicular to the stacking direction.

[0006] Among them, the electrical size is the length related to the wavelength. In some application scenarios, the electrical size can be characterized by the ratio of the physical size to the wavelength of the transmitted electromagnetic wave. The electrical size of the basic unit is sub-wavelength, that is, the electrical size of the basic unit is less than a quarter of the wavelength. Generally, the electrical size must be at least a quarter of the wavelength to form resonance. That is, in the implementation method of the present application, the electromagnetic structure is a non-resonant structure.

[0007] The basic unit is at least partially hollowed out in the area enclosed by the boundary line, which means that in the area enclosed by the boundary line, the dielectric layer can be exposed through the first metal layer, that is, in the area enclosed by the boundary line, the user can observe the dielectric layer through the first metal layer.

[0008] The above electromagnetic structure is non-resonant etching, which does not change the propagation of electromagnetic waves, and the electrical size of the basic unit is relatively small. The basic unit in the electromagnetic structure hollows out the internal metal and retains the boundary line. That is, by reducing the metal in the area surrounded by the boundary line, the current carrying surface is reduced and the internal magnetic field of the basic unit is weakened. In addition, the basic units are arranged periodically to achieve control of the electromagnetic field of the electromagnetic structure.

[0009] In some possible implementations of the first aspect, the boundary line includes two first boundary segments and a second boundary segment. The extension direction of each first boundary segment is parallel to the magnetic field direction of the electromagnetic structure. The extension direction of the second boundary segment intersects with the magnetic field direction corresponding to the electromagnetic structure, and the second boundary segment is used to connect the two first boundary segments. The magnetic field strength of the boundary line as a whole is relatively low, but the magnetic field strength of the area corresponding to the second boundary segment in the boundary line is relatively high.

[0010] In some implementations, the second boundary segment extends along a straight line, and an extending direction of the second boundary segment is perpendicular to a direction of a magnetic field corresponding to the electromagnetic structure.

[0011] The electromagnetic structure described above realizes confinement of the current through the first boundary segment and the second boundary segment, thereby forming a magnetic field with a relatively weak internal magnetic field strength in the electromagnetic structure.

[0012] In some possible implementations of the first aspect, the second boundary segment is bent and extended back and forth in the arrangement plane. In the electromagnetic structure, the boundary line in the basic unit is bent and extended back and forth for many times. Since the current at the bend is reversed, the magnetic field corresponding to the bent current can be reversely offset, thereby enhancing the attenuation of the magnetic field inside the structure and achieving a higher equivalent magnetic permeability.

[0013] In some possible implementations of the first aspect, each basic unit further includes an internal line located in the area enclosed by the boundary line, and the internal line bends and extends back and forth in the arrangement plane. In the above electromagnetic structure, as the structure of the internal line in the basic unit becomes increasingly complex, the magnetic field intensity corresponding to the basic unit gradually decreases, and the equivalent magnetic permeability corresponding to the basic unit gradually increases.

[0014] In some possible implementations of the first aspect, the internal line includes two first internal segments and a second internal segment. Each first internal segment is coupled to one of the second boundary segments. The second internal segment is used to connect the two first internal segments between the two second internal segments end to end. The internal line has a simple structure and can effectively adjust the internal magnetic field corresponding to the basic unit, thereby effectively improving the relative magnetic permeability of the mailbox corresponding to the electromagnetic structure.

[0015] In some possible implementations of the first aspect, the number of internal wires is at least two, and at least two internal wires rotate relative to each other and overlap each other. In the electromagnetic structure, the internal wires have rotational symmetry. The electromagnetic structure can be applied to the miniaturization and broadbandization of antennas and devices that require phase-difference fields or different field directions to achieve certain specific functions such as broadband / circular polarization of multi-field coordination.

[0016] In some possible implementations of the first aspect above, at least two internal lines are separated and distances between adjacent segments are the same.

[0017] In some possible implementations of the first aspect, the types of the plurality of basic units are at least two, and each basic unit is periodically arranged in an arrangement plane. In the electromagnetic structure, the types of basic units are various, which increases the diversity of electromagnetic structure solutions and facilitates the expansion of application scenarios of the electromagnetic structure.

[0018] In some possible implementations of the first aspect above, the arrangement plane includes an intersecting first direction and a second direction, and the plurality of basic units are periodically arranged in the first direction and / or in the second direction.

[0019] In some possible implementations of the first aspect above, the first direction is perpendicular to the second direction.

[0020] In some possible implementations of the first aspect, the first direction is parallel to the magnetic field direction of the electromagnetic structure. That is, in some of the implementations, the plurality of basic units are periodically arrayed along the magnetic field direction of the electromagnetic structure.

[0021] In some possible implementations of the first aspect, the outline of the boundary line includes any one of a square, a rectangle, a triangle, a circle and an ellipse. In the electromagnetic structure, the basic units have various shapes, which increases the diversity of electromagnetic structure solutions and facilitates the expansion of application scenarios of the electromagnetic structure.

[0022] The second aspect of the present application provides an electromagnetic component, wherein the electromagnetic component includes two electromagnetic structures in the first aspect and at least one of the possible implementations of the first aspect. And the two electromagnetic structures are arranged in a superimposed manner. It can be understood that the electromagnetic component can also be understood as an electromagnetic structure. Further increasing the diversity of electromagnetic structure solutions facilitates expanding the application scope of the electromagnetic structure.

[0023] In some possible implementations of the second aspect, in the two electromagnetic structures, the first metal layer of one electromagnetic structure faces the first metal layer of the other electromagnetic structure, that is, the two electromagnetic structures in the electromagnetic assembly are stacked face to face.

[0024] In some possible implementations of the second aspect, in the two electromagnetic structures, the second metal layer of one electromagnetic structure faces the second metal layer of the other electromagnetic structure, that is, the two electromagnetic structures in the electromagnetic assembly are stacked back to back.

[0025] In some possible implementations of the second aspect, the second metal layers of the two electromagnetic structures are integrally formed, that is, when the two electromagnetic structures in the electromagnetic assembly are stacked back to back, the second metal layers in the two electromagnetic assemblies can be integrally formed.

[0026] In some possible implementations of the second aspect, in the two electromagnetic structures, the first metal layer of one electromagnetic structure faces the second metal layer of the other electromagnetic structure, that is, the two electromagnetic structures in the electromagnetic assembly are stacked in the same direction.

[0027] In some possible implementations of the first aspect, in the two electromagnetic structures, the first metal layer of one electromagnetic structure serves as the second metal layer of the other electromagnetic structure. That is, the two electromagnetic structures in the electromagnetic assembly are stacked in the same direction. And the first metal layer of the lower electromagnetic structure can serve as the second metal layer of the upper electromagnetic structure.

[0028] In some possible implementations of the second aspect above, the relative relationship between the two electromagnetic structures includes any one of the following: the two electromagnetic structures have the same structure and the same size; or the two electromagnetic structures have the same structure and the sizes are in proportional relationship; or the two electromagnetic structures have different structures.

[0029] In some possible implementations of the second aspect above, the overlapping manner of the two electromagnetic structures includes any one of the following: the directions in which the first metal layer in the two electromagnetic structures points to the second metal layer are consistent; or the directions in which the first metal layer in the two electromagnetic structures points to the second metal layer are opposite.

[0030] A third aspect of the present application provides an antenna, wherein the antenna includes the electromagnetic structure of the first aspect and any one of the possible implementations of the first aspect.

[0031] In some possible implementations of the third aspect above, the antenna includes any one of a patch antenna, a cavity antenna, a slot antenna and a strip antenna.

[0032] The fourth aspect of the present application provides an electronic device. The electronic device includes the antenna of the third aspect and any one of the possible implementations of the third aspect. The electronic device includes but is not limited to at least one of a mobile phone, a watch, a tablet, a laptop computer and the Internet of Things (IOT).

[0033] A fifth aspect of the present application provides a communication device. The communication device includes any one of the antennas in the third aspect and any possible implementation of the third aspect. The communication device includes but is not limited to a base station, such as a small base station, a medium base station, and a large base station. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] FIG1( a ) shows a schematic diagram of a module of a mobile phone M;

[0035] FIG1( b ) shows a schematic structural diagram of an electromagnetic structure S;

[0036] FIG. 2( a ) shows a stereoscopic view of antenna A′ in some technical solutions of the present application;

[0037] FIG. 2( b ) shows a stereoscopic view of an open resonant ring 40 ′ in an electromagnetic structure S′ in some technical solutions of the present application;

[0038] Figure 3 Shows a circuit diagram corresponding to the electromagnetic structure S' in some embodiments of the present application;

[0039] Figure 4 A graph showing the variation law of the equivalent relative magnetic permeability corresponding to the electromagnetic structure S' in some embodiments of the present application is shown;

[0040] Figure 5 It shows a structural diagram of an electromagnetic structure S" in some embodiments of the present application;

[0041] Figure 6 shows the equivalent relative magnetic permeability curve of the electromagnetic structure S" in some embodiments of the present application;

[0042] FIG. 7( a ) shows a three-dimensional view of an electromagnetic structure S in some embodiments of the present application;

[0043] FIG. 7( b ) shows a three-dimensional diagram of a portion of the electromagnetic structure S in some embodiments of the present application;

[0044] Figure 8 A schematic diagram of the internal magnetic field of the structure corresponding to the basic unit U (the basic unit U, the dielectric layer 200 corresponding to the basic unit U, and the second metal layer 300 corresponding to the basic unit U) after the plane electromagnetic wave is incident in some embodiments of the present application;

[0045] Fig. 9 A schematic diagram of the internal magnetic field of a basic unit of an electromagnetic structure in some existing technical solutions in some embodiments of the present application after a plane electromagnetic wave is incident;

[0046] Fig.10 A schematic diagram showing the variation law of the equivalent relative magnetic permeability of the electromagnetic structure in some existing technical solutions and the electromagnetic structure S in the present application in some embodiments of the present application is shown;

[0047] FIG11( a ) shows schematic diagrams of some existing conventional materials;

[0048] FIG11( b ) shows a schematic diagram of some existing magnetic materials;

[0049] FIG11( c ) shows schematic diagrams of some existing equivalent magnetic materials;

[0050] FIG11( d ) shows a schematic diagram of the electromagnetic structure in the present application;

[0051] FIG. 12( a ) shows a schematic diagram of simulating the passage of a TEM wave through a common material in some technical solutions;

[0052] Figure 12(b) shows the magnetic field direction corresponding to Figure 12(a);

[0053] FIG12( c ) shows a schematic diagram of the distribution of the magnetic field inside the basic unit of the structure corresponding to FIG12( a ) in a wide frequency band;

[0054] FIG12( d ) shows a schematic diagram of the distribution of equivalent relative permeability corresponding to the internal structure of the basic unit of the structure corresponding to FIG12( a );

[0055] FIG. 13( a ) shows a schematic diagram of an electromagnetic structure S being penetrated by a TEM wave in some embodiments of the present application;

[0056] Figure 13(b) shows the magnetic field direction corresponding to Figure 13(a);

[0057] FIG13( c ) is a schematic diagram showing the distribution of the magnetic field inside the basic unit of the structure corresponding to FIG13( a ) in a wide frequency band;

[0058] Fig.14 The graphs showing the change curves of magnetic field intensity and equivalent relative magnetic permeability in different application scenarios in some embodiments of the present application are shown;

[0059] Fig.15 A schematic diagram showing the structure of a mobile phone M in some implementations of the present application is shown;

[0060] Fig.16 shows a stereogram of a patch antenna Aa in some embodiments of the present application;

[0061] FIG. 17( a ) shows a top view of a patch antenna Aa in some embodiments of the present application;

[0062] FIG17( b ) shows a bottom view of the patch antenna Aa in some embodiments of the present application;

[0063] FIG. 18( a ) shows a schematic diagram of magnetic field distribution of a patch antenna Aa in some embodiments of the present application;

[0064] FIG18( b ) shows a schematic diagram of magnetic field distribution of patch antenna Aa in some other technical solutions;

[0065] Fig.19 A comparison diagram of the S parameters and radiation efficiency of the patch antenna Aa in some embodiments of the present application and the patch antenna in some other technical solutions is shown;

[0066] FIG. 20( a ) shows a three-dimensional view of an electromagnetic structure Sa in some embodiments of the present application;

[0067] FIG. 20( b ) shows a stereoscopic view of the electromagnetic structure Sa in some other embodiments of the present application;

[0068] Fig.21 shows a top view of the electromagnetic structure Sa in some embodiments of the present application;

[0069] FIG. 22( a ) shows Fig.21 A schematic diagram of the structure of a basic unit Ua in the electromagnetic structure Sa;

[0070] FIG. 22( b ) shows Fig.21 A schematic diagram of the structure of another basic unit Ua in the electromagnetic structure Sa;

[0071] Figure 22(c) shows Fig.21 A schematic diagram of the structure of another basic unit Ua in the electromagnetic structure Sa;

[0072] FIG. 23( a ) shows a top view of a boundary line 100 a in some embodiments of the present application;

[0073] FIG23( b ) is a schematic diagram showing the current flowing through the boundary line 100 a in FIG23( a );

[0074] FIG. 23( c ) shows a magnetic field distribution diagram of the boundary line 100 a in some embodiments of the present application;

[0075] FIG. 24( a ) shows a top view of a boundary line 100 a in some embodiments of the present application;

[0076] FIG24( b ) is a schematic diagram showing the current flowing through the boundary line 100 a in FIG24( a );

[0077] FIG. 24( c ) shows a magnetic field distribution diagram of the boundary line 100 a in some embodiments of the present application;

[0078] FIG. 25( a ) shows a top view of a boundary line 100 a in some embodiments of the present application;

[0079] FIG25( b ) is a schematic diagram showing the current flowing through the boundary line 100 a in FIG25( a );

[0080] FIG. 25( c ) shows a magnetic field distribution diagram of the boundary line 100 a in some embodiments of the present application;

[0081] Fig.26 The figure shows the magnetic field strength and equivalent magnetic permeability corresponding to the basic units Ua of different forms in some embodiments of the present application;

[0082] Fig. 27 A top view of a boundary line 100a in some embodiments of the present application is shown;

[0083] Fig.28 A top view of a boundary line 100a in some embodiments of the present application is shown;

[0084] Fig.29 shows a stereogram of an electromagnetic structure Sa in some embodiments of the present application;

[0085] Fig.30 shows a stereogram of an electromagnetic structure Sa in some embodiments of the present application;

[0086] FIG. 31( a ) shows a top view of a basic unit Ua in some embodiments of the present application;

[0087] FIG31( b ) is a schematic diagram showing the current flowing through the basic unit Ua in FIG31( a );

[0088] FIG31( c ) shows a magnetic field distribution diagram of a basic unit Ua in some embodiments of the present application;

[0089] FIG32( a ) shows a top view of a basic unit Ua in some embodiments of the present application;

[0090] FIG32( b ) is a schematic diagram showing the current flowing through the basic unit Ua in FIG32( a );

[0091] FIG32( c ) shows a magnetic field distribution diagram of a basic unit Ua in some embodiments of the present application;

[0092] FIG. 33( a ) shows a top view of a basic unit Ua in some embodiments of the present application;

[0093] FIG33( b ) is a schematic diagram showing the current flowing through the basic unit Ua in FIG33( a );

[0094] FIG33( c ) shows a magnetic field distribution diagram of a basic unit Ua in some embodiments of the present application;

[0095] Fig.34 The figure shows the magnetic field strength and equivalent magnetic permeability corresponding to the basic units Ua of different forms in some embodiments of the present application;

[0096] FIG35( a ) shows a top view of a dual-fed dual-polarization / circularly polarized antenna Aa in some embodiments of the present application;

[0097] FIG35( b ) shows a bottom view of a dual-fed dual-polarization / circularly polarized antenna in some embodiments of the present application;

[0098] Fig.36 shows a stereogram of the electromagnetic structure Sa in some embodiments of the present application;

[0099] FIG37( a ) shows a schematic diagram of a basic unit Ua in some embodiments of the present application;

[0100] FIG37( b ) shows a schematic diagram of a basic unit Ua in some embodiments of the present application;

[0101] FIG37( c ) shows a schematic diagram of a basic unit Ua in some embodiments of the present application;

[0102] Fig.38 A three-dimensional diagram of the electromagnetic structure Sa of the present application is shown;

[0103] Fig.39 A three-dimensional diagram of the electromagnetic structure Sa of the present application is shown;

[0104] Fig.40 An exploded view of the antenna Aa in some embodiments of the present application is shown;

[0105] Fig.41 Shows Fig.40 A corresponding stereogram of the electromagnetic assembly;

[0106] FIG. 42( a ) shows a relationship diagram between a projection area S1 where a basic unit in a first electromagnetic structure Sa1 is located and a projection area S2 where a basic unit in a second electromagnetic structure Sa2 is located in some embodiments of the present application;

[0107] FIG. 42( b ) shows a diagram showing the relationship between the projection area S1 where the basic units in the first electromagnetic structure Sa1 are located and the projection area S2 where the basic units in the second electromagnetic structure Sa2 are located in some embodiments of the present application;

[0108] FIG. 42( c ) shows a diagram showing the relationship between the projection area S1 where the basic units in the first electromagnetic structure Sa1 are located and the projection area S2 where the basic units in the second electromagnetic structure Sa2 are located in some embodiments of the present application;

[0109] FIG. 42( d ) shows a relationship diagram between a projection area S1 where a basic unit in a first electromagnetic structure Sa1 is located and a projection area S2 where a basic unit in a second electromagnetic structure Sa2 is located in some embodiments of the present application;

[0110] Fig.43 An exploded view of the antenna Aa in some embodiments of the present application is shown;

[0111] Fig.44 Shows Fig.43 A corresponding stereogram of the electromagnetic assembly;

[0112] Fig.45 An exploded view of the antenna Aa in some embodiments of the present application is shown;

[0113] Fig.46 Shows Fig.45 A corresponding stereogram of the electromagnetic assembly;

[0114] FIG. 47( a ) shows a top view of a slot antenna Ab in some embodiments of the present application;

[0115] FIG47( b ) shows a bottom view of the slot antenna Ab in some embodiments of the present application;

[0116] FIG48( a ) shows a top view of a cavity antenna Ac in some embodiments of the present application;

[0117] FIG48( b ) shows a bottom view of the cavity antenna Ac in some embodiments of the present application;

[0118] Fig.49 The application scenarios of the cavity antenna in a notebook in some embodiments of the present application are shown. DETAILED DESCRIPTION

[0119] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below in conjunction with the accompanying drawings.

[0120] The present application provides an electromagnetic structure. The electromagnetic structure in the present application can be applied to the antenna of an electronic device. The electronic device may include but is not limited to any one of a mobile phone, a watch, a tablet, a laptop computer and an Internet of Things product. In addition, the electromagnetic structure in the present application can also be applied to the antenna of a communication device. The communication device may include but is not limited to a base station, such as a small base station, a medium base station and a large base station, etc.

[0121] For ease of understanding, before describing the technical solution of the present application, the terms involved in the present application are explained.

[0122] Magnetodielectric materials (MDM) are materials that exhibit both dielectric and magnetic properties. They can also be called electromagnetic structures that exhibit both dielectric and magnetic properties. Electromagnetic structures can be natural materials or artificial magnetic materials that have magnetic properties after being placed in a magnetic field or electric current with a specific structure.

[0123] Magnetic permeability (MP) is a physical quantity that characterizes the magnetic properties of magnetic media. Magnetic permeability indicates the resistance to magnetic flux generated by a coil in space or in the space of a magnetic core after current flows through it, or its ability to conduct magnetic lines of force in a magnetic field.

[0124] Relative permeability (RP) is a physical quantity that characterizes the relative magnetic properties of magnetic media. Relative permeability represents the ratio of the magnetic permeability of the medium to the magnetic permeability of vacuum.

[0125] Effective permeability (EP) refers to the magnetic permeability of a magnetic medium that is not uniform in magnetic properties. When the magnetic medium is taken as a whole, the permeability is obtained for the whole.

[0126] Effective relative permeability (ERP) refers to the relative permeability of a magnetic medium that is not uniform in magnetic properties and is obtained by taking the magnetic medium as a whole.

[0127] The dielectric constant (DC) can reflect the dielectric properties or polarization properties of a dielectric under the action of an electrostatic field.

[0128] The dielectric loss tangent is a physical quantity that characterizes the dielectric loss of a dielectric material after an electric field is applied.

[0129] The magnetic loss tangent is a physical quantity that characterizes the magnitude of the dielectric loss of a magneto-dielectric material after a magnetic field is applied.

[0130] In some application scenarios, the magnetoelectric material can be an isotropic magnetoelectric material, or can be understood as a magnetoelectric material whose dielectric constant and relative magnetic permeability are the same in all directions. In this case, any direction of the magnetoelectric material can be understood as the direction corresponding to the maximum relative magnetic permeability.

[0131] In some application scenarios, magnetoelectric materials may also be anisotropic magnetoelectric materials, or can be understood as magnetoelectric materials whose dielectric constants in three directions perpendicular to each other in space are not completely the same, or: magnetoelectric materials whose relative magnetic permeabilities in three directions perpendicular to each other in space are not completely the same.

[0132] In some application scenarios, the magnetoelectric material is a magnetoelectric material with different relative magnetic permeabilities in at least two directions. Different relative magnetic permeabilities in at least two directions can be understood as: the relative magnetic permeabilities of the magnetoelectric material in two or more directions of three directions that are perpendicular to each other in space (or can be understood as in three-dimensional directions) are different. For example, the magnetoelectric material can be a magnetoelectric material with different relative magnetic permeabilities in all directions, or a magnetoelectric material with a relative magnetic permeability in only one direction that is different from that in other directions, or a magnetoelectric material with different relative magnetic permeabilities in multiple directions and the same relative magnetic permeabilities in other directions, etc. The magnetoelectric material always has a direction in which the relative magnetic permeability in this direction is greater than or equal to the relative magnetic permeability in any other direction, and this direction is the direction corresponding to the maximum relative magnetic permeability of the medium structure.

[0133] The magnetoelectric material can be a two-dimensional anisotropic magnetoelectric material formed by laminating a nanomagnetic film and a thicker dielectric film, or a bulk magnetoelectric material mixed with ceramic and ferrite powder, such as MAGTREX TM 555, this material is an artificial composite material of Rogers (or Rogers). It is naturally magnetic, with strong magnetism in two directions and weak or no magnetism in the other direction. The maximum relative magnetic permeability can reach 6. It has electrical properties in all directions and the difference in electrical strength is not large. The ratio of the maximum dielectric constant to the maximum relative magnetic permeability is close to 1, the magnetic loss tangent is less than 0.05, the dielectric loss tangent is about 0.01, and the operating frequency is less than 1GHz.

[0134] It should be noted that magnetic loss refers to the irreversible conversion of a portion of the energy of a magnetic material into heat during the magnetization and demagnetization processes. The energy lost is called magnetic loss. Dielectric loss refers to the phenomenon that the dielectric itself generates heat in an alternating electric field due to the consumption of some electrical energy.

[0135] A larger scaling factor (related to the permeability and dielectric constant), for example, a scaling factor close to 6, can reduce the length of the antenna. Furthermore, a larger relative permeability can greatly increase the inductance of the antenna, thereby improving the efficiency and bandwidth of the antenna.

[0136] Physical length (PL): refers to the mechanical length or geometric length.

[0137] Electrical length (EL): is the length related to the wavelength. Generally, the electrical length must be at least one quarter of the wavelength to form resonance. In some application scenarios, the electrical length can be represented by the ratio of the physical length to the wavelength of the transmitted electromagnetic wave, see formula (1):

[0138]

[0139] Among them, L' is the electrical size, L is the physical size, and λ is the wavelength of the electromagnetic wave.

[0140] It can be understood that the relationship between physical size and electrical size needs to consider the frequency and dielectric substrate (medium). For example, the resonant component is a half-wavelength resonant structure, that is, the electrical size of the resonant component is always half a wavelength, regardless of the dielectric frequency, etc. However, the difference between physical size and electrical size is that the physical size is related to the dielectric frequency. For example, when the dielectric frequency is 3 GHz, the physical size of the resonant component is 100 mm in the air medium; and when a medium with a relative dielectric constant of 4 is used as the substrate of the resonant component, the physical size of the resonant component is 50 mm.

[0141] It should be noted that magnetic loss refers to the irreversible conversion of a portion of the energy of a magnetic material into heat during the magnetization and demagnetization processes. The energy lost is called magnetic loss. Dielectric loss refers to the phenomenon that the dielectric itself generates heat in an alternating electric field due to the consumption of a portion of the electrical energy. (e.g. scaling factor Close to 6), the size of the antenna can be reduced. Furthermore, a larger relative magnetic permeability can greatly increase the inductance of the antenna, thereby improving the efficiency and bandwidth of the antenna.

[0142] After describing the technical terms involved in this application, the technical solutions involved in this application will be described in detail below.

[0143] In order to solve the problems in the background technology, some technical solutions of the present application provide an antenna A', in which the electromagnetic structure S' in the antenna A' increases the inductance through resonance, thereby improving the equivalent relative magnetic permeability of the electromagnetic structure S'. The electromagnetic structure S' in the present application will be described in detail below in conjunction with the accompanying drawings. Figure 2(a) shows a stereoscopic view of the antenna A' in some technical solutions of the present application. Figure 2(b) shows a stereoscopic view of the open resonant ring 40' in the electromagnetic structure S' in some technical solutions of the present application. Figure 3 The circuit diagram corresponding to the electromagnetic structure S' in some embodiments of the present application is shown.

[0144] Combining Figure 2(a), Figure 2(b) and Figure 3 It can be seen that the electromagnetic structure S' includes a first metal layer 10', a dielectric layer 20', a second metal layer 30' and a plurality of open resonant rings 40'. The first metal layer 10', the dielectric layer 20' and the second metal layer 30' are stacked in sequence. The first metal layer 10' can be used for feeding, that is, the first metal layer 10' is a radiation surface, and the second metal layer 30' can be used for grounding, that is, the second metal layer 30' is a grounding surface. The dielectric layer 20' can be a dielectric material or air, and the open resonant ring 40' can be a metal material. A plurality of open resonant rings 40' are arranged along the stacking direction and are periodically arranged in the dielectric layer 20'. In the electromagnetic structure S', the direction of the magnetic field is the direction passing through the open resonant ring 40', such as the D1 direction in Figure 2(a). The direction of the electric field is the direction from the second metal layer 30' to the first metal layer 10', such as the D2 direction in Figure 2(a). The electromagnetic wave transmission direction is perpendicular to the magnetic field direction and the electric field direction, such as the D3 direction in Figure 2(a). In some implementations, the magnetic field direction D1, the electric field direction D2, and the electromagnetic wave transmission direction D3 are perpendicular to each other.

[0145] like Figure 3 As shown, the open resonant ring 40' is a magnetic resonant loop when resonating, which increases the equivalent inductance of the electromagnetic structure S'. The electromagnetic structure S' changes the electromagnetic field of the space it fills based on resonance. This phenomenon can be equivalent to a magnetic medium, thereby increasing the equivalent magnetic permeability of the electromagnetic structure S' at the resonant frequency.

[0146] The following will describe the variation of the equivalent relative magnetic permeability corresponding to the electromagnetic structure S' with frequency. Figure 4 The equivalent relative magnetic permeability variation diagram corresponding to the electromagnetic structure S' in some embodiments of the present application is shown. Figure 4 As shown, the equivalent relative magnetic permeability of the electromagnetic structure S' in the frequency range of 3.2 GHz to 3.3 GHz is greater than 1. The equivalent relative magnetic permeability of the electromagnetic structure S' at the resonant frequency (3.3 GHz) is about 8.

[0147] In order to facilitate understanding of the miniaturization degree of the electromagnetic structure S', the physical size and electrical size of the split resonant ring 40' are described below. As shown in FIG2(b), the physical size of the split resonant ring 40' can be calculated by formula (2):

[0148] lp=2a+2b-g(2)

[0149] Wherein, lp represents the physical size; a represents the height of the split resonant ring 40 ′; b represents the width of the split resonant ring 40 ′; and g represents the size of the opening on the split resonant ring 40 ′.

[0150] The electrical size le of the split resonant ring 40 ′ can be calculated according to the aforementioned formula (1). Based on this, the electrical size le of the split resonant ring 40 ′ is positively correlated with the physical size lp of the split resonant ring 40 ′.

[0151] It can be understood that the open resonant ring 40', as a basic unit in the electromagnetic structure S', is a resonant structure. In order to achieve resonance, the electrical dimension le of the open resonant ring 40' needs to meet certain requirements, for example, the electrical dimension le of the open resonant ring 40' is half a wavelength. According to the aforementioned formula (1), the electrical dimension le of the open resonant ring 40' is positively correlated with the physical dimension lp of the open resonant ring 40'. Based on this, when the electrical dimension le of the open resonant ring 40' is half a wavelength, the physical dimension lp of the open resonant ring 40' is relatively large. And because the physical dimension lp of the open resonant ring 40' is positively correlated with the height a in the open resonant ring 40' and the width b in the open resonant ring 40'. Therefore, when the electrical dimension le of the open resonant ring 40' is relatively large, the height a in the open resonant ring 40' and / or the width b in the open resonant ring 40' are large.

[0152] On the one hand, although the above electromagnetic structure can improve the equivalent magnetic permeability, the size of the open resonant ring 40' is difficult to adjust, making this electromagnetic structure difficult to use in terminal antennas. In order to achieve resonance, the electrical size of the open resonant ring 40' in the electromagnetic structure S' is relatively large, and the physical size of the open resonant ring 40' is large. Therefore, the open resonant ring 40' in the electromagnetic structure S' is also relatively large when arranged in a period. In some application scenarios, the width b of the open resonant ring 40' is small, and the height a of the open resonant ring 40' is large. This structure will make the height of the antenna along the z-axis direction larger, and the miniaturization of the antenna cannot be achieved. In some other application scenarios, the height a of the open resonant ring 40' is small, and the width b of the open resonant ring 40' is large. This structure will make the size of the antenna in the direction perpendicular to the z-axis larger, which will make it difficult for the open resonant ring 40' to achieve periodic arrangement, and then lead to a low relative magnetic permeability of the electromagnetic structure S'. On the other hand, the action bandwidth of the above electromagnetic structure S' is relatively narrow, and it is only effective at a single frequency point (for example Figure 4At 3.3GHz in the figure, it is equivalent to a magnetic material with high magnetic permeability.

[0153] In order to solve the problem that the aforementioned electromagnetic structure is difficult to apply to terminal antennas and has a relatively narrow action bandwidth, the present application also provides an electromagnetic structure, which will be described in detail below in conjunction with the accompanying drawings. The electromagnetic structure increases the inductance through resonance and thus improves the corresponding equivalent relative magnetic permeability. The electromagnetic structure in the present application will be described in detail below in conjunction with the accompanying drawings. Figure 5 A structural diagram of an electromagnetic structure S" in some embodiments of the present application is shown. Figure 6 The equivalent relative magnetic permeability curve of the electromagnetic structure S" in some embodiments of the present application is shown.

[0154] like Figure 5 As shown, the electromagnetic structure S" includes a first metal layer 10", a dielectric layer 20" and a second metal layer 30" which are stacked in sequence, wherein the first metal layer 10" can be grounded, the dielectric layer 20" can be a dielectric material or air, and the second metal layer 30" can be fed. The first metal layer 10" etches a complementary metal open resonant ring, and the third metal layer 30" etches a meandering line wrapped in a metal frame. And the meandering line must be bent to an electrical size sufficient for resonance. The third metal layer 30" of this structure does not have the potential to achieve a high equivalent magnetic permeability (maximum 4). The third metal layer 30" must also cooperate with the defective open resonant ring periodic structure etched on the first metal layer 10" to work together to control the electromagnetic field during resonance. As shown Figure 6 As shown, the electromagnetic structure S" can achieve an equivalent magnetic permeability greater than 1 near the resonant frequency.

[0155] The equivalent magnetic permeability corresponding to the above-mentioned electromagnetic structure S" is relatively low, and there is an equivalent magnetic permeability jump at the resonant frequency. In addition, near the resonance point of 3 GHz, the equivalent relative magnetic permeability changes suddenly and is unstable, which increases the difficulty of designing the physical size of the antenna by the magnetic dielectric parameters, and thus increases the difficulty of designing the antenna. For example, the antenna is a broadband antenna, and the various resonant frequencies of the broadband antenna will be offset due to the uneven magnetic permeability. In addition, the application of the electromagnetic structure of the double-layer etched pattern in the terminal antenna is limited. For example, the terminal device generally includes a ground plane, so the ground plane can be used for etching or loading of an equivalent magnetic material structure, but the antenna surface is usually relatively small in length and has basically no etching / loading space. Therefore, there are relatively few application scenarios in which etching can be performed on both the ground plane and the antenna surface at the same time, which narrows the application scope of the electromagnetic structure S".

[0156] In order to solve the problem of relatively low equivalent magnetic permeability of the aforementioned electromagnetic structure, the present application provides an electromagnetic structure. The electromagnetic structure realizes the normal propagation of electromagnetic waves and improves the equivalent relative magnetic permeability in a non-resonant manner. The technical solution corresponding to the present application will be described in detail below in conjunction with the accompanying drawings. FIG. 7(a) shows a stereoscopic view of an electromagnetic structure S in some embodiments of the present application. FIG. 7(b) shows a stereoscopic view of a partial structure of the electromagnetic structure S in some embodiments of the present application.

[0157] In combination with FIG. 7(a) and FIG. 7(b), it can be seen that in some embodiments of the present application, the electromagnetic structure S includes a first metal layer 10, a dielectric layer 20, and a second metal layer 30 stacked in sequence along the stacking direction, one of the first metal layer 10 and the second metal layer is fed, and the other is grounded. The first metal layer 10 includes a plurality of basic units U arranged periodically in a first plane. The electrical size of the basic unit U is sub-wavelength, which is much smaller than the working wavelength, so the electromagnetic structure S is a non-resonant unit. Each basic unit U includes a boundary line 100, and the area of ​​the basic unit U formed by the boundary line 100 is at least partially hollowed out. The first plane is perpendicular to the stacking direction.

[0158] Among them, the basic unit U is at least partially hollowed out in the area enclosed by the boundary line, which means that in the area enclosed by the boundary line, the dielectric layer 20 can be exposed through the first metal layer 10, that is, in the area enclosed by the boundary line, the user can observe the dielectric layer 20 through the first metal layer 10.

[0159] In some embodiments of the present application, the first metal layer 10 is used for power feeding, and the second metal layer 30 is used for grounding.

[0160] In some other embodiments of the present application, the first metal layer 10 is grounded, and the second metal layer 30 is fed.

[0161] In some embodiments of the present application, the first metal layer 10 and the second metal layer 30 may be any material capable of achieving effective transmission of electromagnetic waves. The dielectric layer 20 may be a dielectric material or air. The present application does not make any specific limitation on this.

[0162] In some implementations, in the electromagnetic structure S, the basic units U in the first metal layer 10 may be the same. In some other alternative implementations, in the electromagnetic structure S, the basic units U in the first metal layer 10 may also be different. For example, the basic units U in the first metal layer 10 have similar structures but different sizes, or the basic units U in the first metal layer 10 have different structures. This application does not specifically limit this.

[0163] The electromagnetic structure S comprises a first metal layer 10, a dielectric layer 20 and a third metal layer 30 which are stacked in sequence, and the periodically arranged basic units in the first metal layer 10 comprise a boundary line 100. The periodically arranged boundary line 100, the dielectric layer 20 and the third metal layer 30 cooperate to realize the normal propagation of electromagnetic waves in the electromagnetic structure S. At the same time, the area formed by the boundary line 100 is at least partially hollowed out to attenuate the magnetic field between the first metal layer 10 and the second metal layer 30, thereby improving the equivalent relative magnetic permeability of the electromagnetic structure S. It is worth noting that the electromagnetic structure does not need to improve the equivalent relative magnetic permeability through the resonance of the basic unit U, so the electrical size corresponding to the basic unit U can be relatively small, that is, the physical size of the structure corresponding to the basic unit U can be effectively reduced, which is convenient for realizing the miniaturization of the basic unit U, and also for realizing the miniaturization of the electromagnetic structure S, and also for realizing the miniaturization of the communication equipment (such as the antenna) using the electromagnetic structure S.

[0164] It is worth noting that the equivalent relative magnetic permeability of the electromagnetic structure S in the present application can simulate the change of magnetic permeability by changing the magnetic field strength inside the electromagnetic structure S, which will be described in detail below in conjunction with the accompanying drawings.

[0165] Figure 8 The schematic diagram of the internal magnetic field of the structure corresponding to the basic unit U (the basic unit U, the dielectric layer 200 corresponding to the basic unit U, and the second metal layer 300 corresponding to the basic unit U) in some embodiments of the present application after the plane electromagnetic wave is incident. Figure 8 The corresponding internal magnetic field schematic diagram corresponds to the basic unit in Figure 7 (a) and Figure 7 (b), where D1 is the magnetic field direction of the basic unit U, and D2 is the electromagnetic wave transmission direction of the basic unit U. Figure 8 As shown, the magnetic field strength of the internal magnetic field of the basic unit U of the electromagnetic structure S in the present application after the plane electromagnetic wave is incident ranges from 10A / m to 70A / m. Moreover, along the magnetic field direction D1, the magnetic field strength corresponding to the basic unit U gradually decreases, and after reaching the middle position l0 of the basic unit, the magnetic field strength corresponding to the basic unit U gradually increases. In some of the implementations, the magnetic field strength corresponding to the basic unit U is symmetrical relative to the middle position l0. In addition, along the electromagnetic wave transmission direction D2, the magnetic field strength corresponding to the basic unit U remains basically consistent. The electromagnetic structure of the present application will attenuate the magnetic field inside the structure, bring high wave impedance, and thus simulate a high equivalent permeability.

[0166] The electromagnetic structure S is non-resonantly etched, does not change the propagation of waves, and has a small electrical size. The basic unit U in the electromagnetic structure S is hollowed out with internal metal, leaving only the boundary line. That is, the basic unit U in the electromagnetic structure S reduces the metal in the area enclosed by the boundary line, reduces the current carrying surface, and weakens the internal magnetic field of the basic unit U. In addition, in the electromagnetic structure S, the basic units U are arranged periodically to achieve control of the electromagnetic field of the electromagnetic structure S.

[0167] In some embodiments of the present application, the number of basic units in the electromagnetic structure S may be finite, for example, 3, 4, 5, 8, 9, 10, etc. In some other embodiments of the present application, the number of basic units in the electromagnetic structure S may also be infinite. The present application does not make specific limitations on this.

[0168] In some embodiments of the present application, the basic units in the electromagnetic structure S are arranged unidirectionally and periodically along a certain direction.

[0169] In some other embodiments of the present application, the basic units in the electromagnetic structure S may also be periodically arranged in two intersecting directions in a certain plane. In some implementations, the two intersecting directions are perpendicular to each other.

[0170] Fig. 9 The schematic diagram of the internal magnetic field of the basic unit of the electromagnetic structure in some existing technical solutions in some embodiments of the present application after the plane electromagnetic wave is incident. Fig. 9 The corresponding internal magnetic field schematic diagram corresponds to the basic unit in the conventional dielectric material. When the plane electromagnetic wave is transmitted in the conventional dielectric material, its magnetic field remains uniform and constant. The magnetic field strength range of the basic unit's internal magnetic field after the plane electromagnetic wave is incident is about 55A / m.

[0171] Comparison Figure 8 and Fig. 9 It can be seen that the internal magnetic field of the basic unit U in the electromagnetic structure S in the present application is significantly reduced. This is mainly because the electromagnetic structure in the present application includes periodically arranged basic units to control the electromagnetic field inside the electromagnetic structure. In the basic unit, by at least partially hollowing out the internal metal, reducing the area where the metal is located, reducing the current carrying surface, weakening the internal magnetic field, and thus bringing a higher wave impedance to simulate a higher equivalent relative permeability.

[0172] Fig.10 The schematic diagram of the change law of the equivalent relative magnetic permeability of the electromagnetic structure in some existing technical solutions and the electromagnetic structure S in this application in some embodiments of the present application is shown. Among them, la corresponds to the relative magnetic permeability corresponding to the electromagnetic structure in some existing technical solutions, and lb corresponds to the relative magnetic permeability corresponding to the electromagnetic structure in some technical solutions of this application. Fig.10As shown, the relative magnetic permeability corresponding to the electromagnetic structure in some existing technical solutions ranges from about 0.8 to 1. The relative magnetic permeability of the electromagnetic structure in the present application ranges from about 6.8 to 9.3. Moreover, in the present application, as the frequency increases, the relative magnetic permeability of the electromagnetic structure increases slightly. Therefore, the electromagnetic structure S corresponding to the present application can ensure that the magnetic field inside the electromagnetic structure S is stable within a wider frequency range, and achieve broadband equivalent magnetic material properties. The simulation results of the equivalent magnetic permeability of the electromagnetic structure S can obtain a stable equivalent relative magnetic permeability of more than 7 within a broadband frequency band of 0.6 to 6 GHz.

[0173] The working principle of the technical solution in this application will be described in detail below with reference to the accompanying drawings.

[0174] In electromagnetism, when a magnetic material is stimulated by an external magnetic induction intensity B0, the molecules inside the magnetic material are magnetized with a magnetization intensity of M, which increases the magnetic permeability. The equivalent material is expected to have an equivalent electromagnetic structure that responds to electromagnetic waves to simulate changes in material parameters.

[0175] Figure 11(a) shows a schematic diagram of some existing conventional materials. The magnetic induction intensity of conventional materials can be calculated by formula (3):

[0176] B0=μ o μ r H (3)

[0177] Among them, B0 is the magnetic induction intensity; μ0 is the vacuum magnetic permeability; μ r is the relative magnetic permeability; H is the magnetic field intensity.

[0178] According to formula (3), it is not difficult to calculate the relative magnetic permeability μ r The calculation formula (4) is:

[0179]

[0180] Among them, μ r is the relative magnetic permeability; B0 is the magnetic induction intensity; μ0 is the vacuum magnetic permeability; H is the magnetic field intensity.

[0181] Figure 11(b) shows a schematic diagram of some existing magnetic materials. The improvement of magnetic permeability of magnetic materials comes from material magnetization, and conventional materials do not have magnetization ability. Among them, the magnetic induction intensity of magnetic materials can be calculated by formula (5):

[0182] B=μ o H+M (5)

[0183] Among them, B is the magnetic induction intensity; μ0 is the vacuum magnetic permeability; H is the magnetic field intensity; M is the magnetization intensity.

[0184] According to formula (5), it is not difficult to deduce the calculation formula (6) of magnetic induction intensity B:

[0185] B=μ o (1+γm)H (6)

[0186] Among them, B is the magnetic induction intensity; μ0 is the vacuum magnetic permeability; H is the magnetic field intensity; γ is a constant; m is the relative magnetization intensity.

[0187] According to formula (6), it is not difficult to calculate the relative magnetic permeability μ r The calculation formula (7):

[0188]

[0189] Among them, μ r is the relative magnetic permeability; B0 is the magnetic induction intensity; μ0 is the vacuum magnetic permeability; H is the magnetic field intensity; γ is a constant; m is the relative magnetization intensity.

[0190] FIG11(c) shows a schematic diagram of some existing equivalent magnetic materials. The equivalent magnetic material uses the change in magnetic field strength inside the electromagnetic structure to simulate the change in magnetic permeability. The magnetic induction intensity of the equivalent magnetic material can be calculated by formula (8):

[0191] B0=μ o μ r H=μ o μ′ r H1 (8)

[0192] Among them, B0 is the magnetic induction intensity; μ0 is the vacuum magnetic permeability; μ r is the relative magnetic permeability; H is the magnetic field intensity; μ r ′ is the equivalent relative magnetic permeability; H1 is the equivalent magnetic field intensity.

[0193] According to formula (8), it is not difficult to deduce the calculation formula (9) of the equivalent relative magnetic permeability of the equivalent magnetic material:

[0194]

[0195] If H1<H, then μ r ′>μ r >1.

[0196] Among them, μ r′ is the equivalent relative magnetic permeability; B0 is the magnetic induction intensity; μ0 is the vacuum magnetic permeability; H1 is the equivalent magnetic field intensity.

[0197] Figure 11(d) shows a schematic diagram of the electromagnetic structure in the present application. As shown in Figure 11(d), a non-resonant electromagnetic structure reduces the size of the magnetic field inside the electromagnetic structure unit in a wide frequency range by etching a suitable pattern, thereby obtaining a higher equivalent relative permeability.

[0198] FIG12(a) shows a schematic diagram of simulating the TEM wave passing through ordinary materials in some technical solutions. FIG12(b) shows the direction of the magnetic field corresponding to FIG12(a). FIG12(c) shows a schematic diagram of the distribution of the magnetic field inside the basic unit of the structure corresponding to FIG12(a) in a wide frequency band. FIG12(d) shows a schematic diagram of the distribution of the equivalent relative permeability corresponding to the internal structure of the basic unit of the structure corresponding to FIG12(a). As shown in FIG12(c) and FIG12(d), the magnetic field inside the unit is evenly distributed in a wide frequency band, and the equivalent relative permeability extracted inside the unit is 1.

[0199] FIG. 13(a) shows a schematic diagram of an electromagnetic structure S being passed through by a TEM wave in some embodiments of the present application. FIG. 13(b) shows the direction of the magnetic field corresponding to FIG. 13(a). FIG. 13(c) shows a schematic diagram of the distribution of the magnetic field inside the basic unit of the structure corresponding to FIG. 13(a) in a wide frequency band. As shown in FIG. 13, the magnetic field inside the unit is weakened, and the equivalent relative permeability extracted inside the unit is greater than 1 (e.g., 3.5).

[0200] Fig.14 The curves of magnetic field intensity and equivalent relative permeability under different application scenarios in some embodiments of the present application are shown. Among them, lc corresponds to the magnetic field intensity change curve of Figure 13 (a), ld corresponds to the magnetic field intensity change curve of Figure 12 (a), le corresponds to the equivalent relative permeability change curve of Figure 13 (a), and ld corresponds to the equivalent relative permeability change curve of Figure 12 (a). Fig.14 As shown, the structure corresponding to FIG13(a) is relative to the structure corresponding to FIG12(a). As can be seen from the comparison between lc and ld, the magnetic field intensity becomes weaker, and as can be seen from the comparison between le and lf, the equivalent relative magnetic permeability becomes higher.

[0201] The technical solution provided in the present application can be applied to a structure with a double metal layer. The technical solution provided in the present application can be applied to an electromagnetic structure that requires electromagnetic wave transmission. In addition, the technical solution provided in the present application can also be applied to an antenna that requires electromagnetic wave transmission. That is, the electromagnetic structure can be integrated in the antenna. In some of the implementations, the antenna may include but is not limited to patch antennas, strip antennas, slot antennas, and cavity antennas, etc., which have two opposing metal surfaces. In addition, the technical solution provided in the present application can also be applied to electronic devices and communication devices that require electromagnetic wave transmission. That is, the antenna can be integrated in electronic devices and communication devices. In some of the implementations, the electronic device includes but is not limited to any one of a mobile phone, a watch, a tablet, a laptop computer, and an Internet of Things product. In some of the implementations, the communication device includes but is not limited to any one of a large base station, a small base station, etc. This application does not specifically limit this.

[0202] The following will take mobile phone M as an example to describe the technical solution corresponding to this application.

[0203] Fig.15 FIG. 2 shows a schematic diagram of the structure of a mobile phone M in some implementations of the present application. Fig.15 As shown, in some embodiments of the present application, the mobile phone M includes an antenna A and a support body B. The antenna A is arranged on the support body B. The antenna A may include the electromagnetic structure S corresponding to Figure 7 (a) and Figure 7 (b), and the specific type of the antenna A may be at least one of a patch antenna, a strip antenna, a cavity antenna and a slot antenna, which is not specifically limited in the present application. It can be understood that the basic unit in the electromagnetic structure S can be etched or loaded on the radiation plane or the ground plane of the antenna to achieve the effect of miniaturization of the antenna area, which is not specifically limited here.

[0204] In the present application, the antenna has two planar metal layers, and the antenna magnetic field has a horizontal magnetic field. The figures listed in this article are schematic diagrams of the present invention and do not constitute a limitation of the present invention. For ease of understanding and description, the following description will be taken as an example of a patch antenna.

[0205] Fig.16 FIG. 2 shows a stereogram of a patch antenna Aa in some embodiments of the present application. Fig.16 As shown, in some embodiments of the present application, the patch antenna Aa includes a first metal layer 10a, a dielectric layer 20a, and a second metal layer 30a. The first metal layer 10a is fed, and the second metal layer 30a is grounded. The first metal layer 10a, the dielectric layer 20a, and the second metal layer 30a constitute an electromagnetic structure Sa.

[0206] FIG. 17(a) shows a top view of the patch antenna Aa in some embodiments of the present application. FIG. 17(b) shows a bottom view of the patch antenna Aa in some embodiments of the present application. In combination with FIG. 17(a) and FIG. 17(b), it can be seen that in some embodiments of the present application, the second metal layer 30a includes a plurality of basic units Ua arranged periodically in the first plane. It can be understood that in some other embodiments, the first metal layer 10a includes a plurality of basic units arranged periodically in the first plane.

[0207] FIG18(a) shows a schematic diagram of the magnetic field distribution of the patch antenna Aa in some embodiments of the present application. FIG18(b) shows a schematic diagram of the magnetic field distribution of the patch antenna Aa in some other technical solutions. By comparing FIG18(a) and FIG18(b), it is not difficult to find that the internal magnetic field of the patch antenna Aa is effectively weakened.

[0208] Fig.19 FIG. 1 shows a comparison of the S parameters and radiation efficiency of the patch antenna Aa in some embodiments of the present application and the patch antenna in some other technical solutions. Fig.19 As shown, the electromagnetic structure in the present application realizes the miniaturization and broadbandization of the antenna while ensuring the radiation efficiency, which is consistent with the effect of ideal lossless magnetic materials.

[0209] In addition, the radiation efficiency at the resonant frequency of the present application is about -0.51dB, while the radiation efficiency at the resonant frequency of some existing technical solutions is about -0.23dB. It can be understood that this difference in radiation efficiency may be caused by the size. The radiation capacity of a large size is relatively strong. When the structure is miniaturized, a smaller size is used to radiate electromagnetic waves of the same frequency, which will cause a slight difference in radiation efficiency, which will not be described in detail here.

[0210] In some embodiments of the present application, the basic units in the electromagnetic structure may be arranged periodically, which is not specifically limited in the present application.

[0211] In some embodiments of the present application, a metal strip structure can be added to the inner side of the metal frame of the basic unit. The metal strip structure is rotatable and connectable, with no limit on the number of strips; the frame line itself can be bent, with no limit on the number of bends and the direction of the bends.

[0212] The following will describe in detail possible technical solutions for the electromagnetic structure in the patch antenna Aa of the present application in conjunction with the accompanying drawings.

[0213] Fig. 20(a) shows a stereoscopic view of the electromagnetic structure Sa in some embodiments of the present application. Fig. 20(b) shows a stereoscopic view of the electromagnetic structure Sa in some other embodiments of the present application.

[0214] As shown in Figures 20(a) and 20(b), in some embodiments of the present application, the electromagnetic structure Sa in the patch antenna Aa includes a first metal layer 10a, a dielectric layer 20a, and a second metal layer 30a stacked in sequence. The first metal layer 10a is fed, and the second metal layer 30a is grounded. The first metal layer 10a includes basic units Ua arranged periodically along the x direction. The electrical size le of the basic unit Ua is much smaller than the working wavelength, so the basic unit Ua can be loaded in a low-profile antenna or a resonant structure.

[0215] The electromagnetic structure can have a wide working bandwidth and a high equivalent relative magnetic permeability without introducing additional losses, and the fluctuation of the equivalent relative magnetic permeability within the working bandwidth is small.

[0216] In some embodiments of the present application, the basic unit Ua includes a boundary line 100a. The boundary line 100a can extend along the boundary of the basic unit Ua to maintain the normal propagation of electromagnetic waves. The area enclosed by the boundary line 100a is at least partially hollowed out to attenuate the internal magnetic field and thereby increase the equivalent relative magnetic permeability. The entire electromagnetic structure Sa does not need to resonate, thereby making the electrical size in the electromagnetic structure relatively small. This facilitates the miniaturization of the electromagnetic structure Sa and the antenna corresponding to the electromagnetic structure Sa.

[0217] In some embodiments of the present application, the shape of the boundary line 100a in the basic unit Ua can be any one of regular shapes such as square (as shown in Figure 20 (a)), rectangle, triangle, circle (as shown in Figure 20 (b)) and ellipse, or it can be an irregular geometric figure. The present application does not make specific restrictions on this. It can be understood that the present application does not limit the specific shape of the boundary line 100a in the basic unit. Any boundary line 100a that can achieve no loss, a wide working bandwidth and a high equivalent relative permeability is within the scope of protection of the present application, and no examples will be given here one by one.

[0218] In addition, in some of the implementations, the border line 100a can be a closed line, that is, the border line 100a is surrounded by a sealed area. In some other replaceable implementations, the border line 100a can also be a non-closed line. It can be understood that the form of the border line 100a that can achieve effective transmission of electrical signals is within the protection scope of this application, and this application does not make specific restrictions on this. For ease of understanding and description, the following description will be taken as an example that the border line shape in the basic unit is a square.

[0219] Fig.21 FIG22( a ) shows a top view of the electromagnetic structure Sa in some embodiments of the present application. Fig.21 FIG22(b) shows a schematic diagram of a basic unit Ua in the electromagnetic structure Sa. Fig.21Schematic diagram of another basic unit Ua in the electromagnetic structure Sa. Fig. 22(c) shows Fig.21 Schematic diagram of another basic unit Ua in the electromagnetic structure Sa.

[0220] As shown in Fig. 22(a), in some implementation manners, the shape of the boundary line 100a in the basic unit Ua of the electromagnetic structure Sa can be in the shape of a "square". As shown in Fig. 22(b), in some other implementation manners, the shape of the boundary line 100a in the basic unit Ua of the electromagnetic structure Sa can also be in the shape of a "worker". As shown in Fig. 22(c), in some other implementation manners, the shape of the boundary line 100a in the basic unit Ua of the electromagnetic structure Sa can also be in the shape of a "C". It can be understood that the forms of the basic unit Ua that can realize Fig.21 the corresponding electromagnetic structure Sa are all within the protection scope of this application, and this application does not make specific limitations on this.

[0221] Next, some specific structures of the boundary line 100a will be described by taking the boundary line 100a in Fig. 22(b) as an example.

[0222] In some embodiments of this application, the basic unit of the electromagnetic structure is further improved. The basic unit is formed after the boundary line is bent multiple times. Since the current reverses at the bending point, the magnetic fields corresponding to the bent currents can cancel each other out in the reverse direction, so the attenuation of the magnetic field inside the structure can be enhanced, and a higher equivalent magnetic permeability can be achieved. This will be described in detail below with reference to the drawings.

[0223] Fig. 23(a) shows a top view of the boundary line 100a in some embodiments of this application. Fig. 23(b) shows a schematic diagram of the current flowing through the boundary line 100a in Fig. 23(a). Fig. 23(c) shows a magnetic field distribution diagram of the boundary line 100a in some embodiments of this application. As shown in Fig. 23(a), in some embodiments of this application, the second boundary segment 120a extends reciprocally and bends in the first plane. The boundary line 100a includes two relatively arranged first boundary segments 110a and a second boundary segment 120a for connecting the two first boundary segments 110a. Among them, the first boundary segment 110a is parallel to the magnetic field direction D1, and the second boundary segment 120a is perpendicular to the magnetic field direction D1. As shown in Fig. 23(b), when the current flows through the boundary line 100a, the current direction in the second boundary segment 120a points from one first boundary segment 110a to the other first boundary segment 110a. As shown in Fig. 23(c), the overall magnetic field intensity where the boundary line 100a is located is relatively low, but the magnetic field intensity in the corresponding area of the second boundary segment 120a in the boundary line 100a is relatively high.

[0224] FIG. 24 (a) shows a top view of the boundary line 100a in some embodiments of the present application. FIG. 24 (b) shows a schematic diagram of the current flowing through the boundary line 100a in FIG. 24 (a). FIG. 24 (c) shows a magnetic field distribution diagram of the boundary line 100a in some embodiments of the present application. As shown in FIG. 24 (a), in some embodiments of the present application, the boundary line 100a includes two first boundary segments 110a arranged relatively to each other, and a second boundary segment 120a for connecting the two first boundary segments 110a, and the second boundary segment 120a includes a boundary segment 121a, a boundary segment 122a, a boundary segment 123a, a boundary segment 124a and a boundary segment 125a connected end to end in sequence. Among them, the first boundary segment 110a, the boundary segment 122a and the boundary segment 124a are parallel to the magnetic field direction D1, and the boundary segment 121a, the boundary segment 123a and the boundary segment 125a are perpendicular to the magnetic field direction D1. As shown in Fig. 24(b), when current flows through the boundary line 100a, the current direction in the second boundary segment 120a flows from the boundary segment 125a to the boundary segment 121a. As shown in Fig. 24(c), the magnetic field strength of the entire boundary line 100a is relatively low, but the magnetic field strength of the area corresponding to the second boundary segment 120a in the boundary line 100a is relatively high.

[0225] In addition, by comparing FIG. 24(c) and FIG. 23(c), it is not difficult to find that the magnetic field intensity in FIG. 24(c) is relatively lower and more uniform. This may be because the boundary segments 122a, 123a and 124a in the second boundary segment 120a corresponding to FIG. 24(c) are in a bent state, and the currents of the boundary segments 122a and 124a in the bent state are opposite, so the magnetic fields generated by the boundary segments 122a and 124a can be reversed, thereby enhancing the weakening of the magnetic field inside the structure. In addition, the boundary segments 121a, 123a and 125a in the second boundary segment 120a corresponding to FIG. 24(c) are all perpendicular to the magnetic field direction D1. Compared with FIG. 23( c ), the boundary segments (such as boundary segments 121a , 123a , and 125a ) corresponding to FIG. 24( c ) that are perpendicular to the magnetic field direction are more dispersed, which may also make the magnetic field strength of the boundary line 100a relatively smaller and more uniform.

[0226] FIG. 25 (a) shows a top view of the boundary line 100a in some embodiments of the present application. FIG. 25 (b) shows a schematic diagram of the current flowing through the boundary line 100a in FIG. 25 (a). FIG. 25 (c) shows a magnetic field distribution diagram of the boundary line 100a in some embodiments of the present application. As shown in FIG. 25 (a), in some embodiments of the present application, the boundary line 100a includes two first boundary segments 110a arranged opposite to each other, and a second boundary segment 120a for connecting the two first boundary segments 110a, and the second boundary segment 120a includes a boundary segment 121a, a boundary segment 122a, a boundary segment 123a, a boundary segment 124a, a boundary segment 125a, a boundary segment 126a, a boundary segment 127a, a boundary segment 128a and a boundary segment 129a connected in sequence from beginning to end. Among them, the first boundary segment 110a, the boundary segment 122a, the boundary segment 124a, the boundary segment 126a and the boundary segment 128a are parallel to the magnetic field direction D1, and the boundary segment 121a, the boundary segment 123a, the boundary segment 125a, the boundary segment 127a and the boundary segment 129a are perpendicular to the magnetic field direction D1. As shown in Figure 25 (b), when the current flows through the boundary line 100a, the current direction in the second boundary segment 120a flows from the boundary segment 129a to the boundary segment 121a. As shown in Figure 25 (c), the magnetic field strength of the entire boundary line 100a is relatively low, but the magnetic field strength of the corresponding area of ​​the second boundary segment 120a in the boundary line 100a is slightly increased.

[0227] In addition, by comparing FIG. 25(c) and FIG. 24(c), it is not difficult to find that the magnetic field intensity in FIG. 25(c) is relatively lower and more uniform. This may be because the bending state in the second boundary segment 120a corresponding to FIG. 25(c) is more significant, the current at the bending state is reversed, and the magnetic field generated is reversed, thereby enhancing the weakening of the magnetic field inside the structure. In addition, compared with FIG. 24(c), the boundary segments perpendicular to the magnetic field direction corresponding to FIG. 25(c) (such as boundary segment 121a, boundary segment 123a, boundary segment 125a, boundary segment 127a and boundary segment 129a) are more dispersed, which may also make the magnetic field intensity of the boundary line 100a relatively smaller and more uniform.

[0228] Fig.26The magnetic field strength and equivalent magnetic permeability corresponding to the basic units Ua of different forms in some embodiments of the present application are shown. Among them, l01 represents the curve of the change of magnetic field strength with frequency corresponding to the boundary line 100a in Figure 23 (a). l02 represents the curve of the change of equivalent magnetic permeability with frequency corresponding to the boundary line 100a in Figure 23 (a). l11 represents the curve of the change of magnetic field strength with frequency corresponding to the boundary line 100a in Figure 24 (a). l12 represents the curve of the change of equivalent magnetic permeability with frequency corresponding to the boundary line 100a in Figure 24 (a). l21 represents the curve of the change of magnetic field strength with frequency corresponding to the boundary line 100a in Figure 25 (a). l22 represents the curve of the change of equivalent magnetic permeability with frequency corresponding to the boundary line 100a in Figure 25 (a). As shown Fig.26 As shown by Figure 23(a) to Figure 24(a) 25(a), as the bending degree of the second boundary segment 120a in the boundary line 100a becomes increasingly complex, the magnetic field intensity corresponding to the boundary line 100a gradually decreases, and the equivalent magnetic permeability corresponding to the boundary line 100a gradually increases.

[0229] Fig. 27 FIG. 1 shows a top view of the boundary line 100a in some embodiments of the present application. Fig. 27 As shown, in some embodiments of the present application, the boundary line 100a includes two first boundary segments 110a arranged opposite to each other, and a second boundary segment 120a for connecting the two first boundary segments 110a, and the second boundary segment 120a includes boundary segments 121a, 122a, 123a, 124a, 125a, 126a, 127a, 128a, and 129a connected in sequence end to end. Among them, the first boundary segment 110a, 122a, 124a, 126a, and 128a are parallel to the magnetic field direction D1, and the boundary segments 121a, 123a, 125a, 127a, and 129a are perpendicular to the magnetic field direction D1. Compare Fig. 27 As shown in Figure 25(a), Fig. 27 The size and orientation of the boundary line 100a in the figure are adaptively adjusted.

[0230] Fig.28 A top view of the boundary line 100a in some embodiments of the present application is shown. Fig.28 It is substantially the same as FIG. 25( a ), except that the boundary segments 124 a and 126 a in the second boundary segment 120 a are further bent, which will not be described in detail here.

[0231] Fig.29 1 shows a stereogram of an electromagnetic structure Sa in some embodiments of the present application. The electromagnetic structure Sa includes Fig. 27 The etched pattern shown.

[0232] Understandably, Figure 23(a) to Figure 29 Only the possible specific structure of the boundary line 100a in the electromagnetic structure Sa is shown when the boundary line 100a in the basic unit Ua can also be in the shape of an "I" shape. The specific structure of the boundary line 100a in the shape of a "mouth" and a "C" shape is similar to the specific structure of the boundary line 100a in the shape of an "I" shape, and will not be repeated here.

[0233] In some embodiments of the present application, the basic unit of the electromagnetic structure is further improved. In the basic unit Ua, metal strips are symmetrically placed near the boundary line 100a, and the metal strips are bent and connected to form a periodic arrangement along the X direction. The electrical size of the basic unit is much smaller than the working wavelength. This will be described in detail below with reference to the accompanying drawings.

[0234] Fig.30 FIG. 4 shows a stereogram of the electromagnetic structure Sa in some embodiments of the present application. Fig.30 As shown, the electromagnetic structure Sa includes a first metal layer 10a, a dielectric layer 20a and a second metal layer 30a stacked in sequence. The first metal layer 10a is fed, and the second metal layer 30a is grounded. The first metal layer 10a includes basic units Ua periodically arranged along the x direction. The basic unit Ua includes a boundary line 100a and an internal line 200a. The internal line 200a bends and extends back and forth in the arrangement plane.

[0235] In some implementations, the inner line 200a is bent inside the boundary line 100a, and at least a portion of the inner line 200a is parallel to the second boundary segment 120a of the boundary line 100a.

[0236] FIG. 31(a) shows a top view of the basic unit Ua in some embodiments of the present application. FIG. 31(b) shows a schematic diagram of the current flowing through the basic unit Ua in FIG. 31(a). FIG. 31(c) shows a magnetic field distribution diagram of the basic unit Ua in some embodiments of the present application. As shown in FIG. 31(a), in some embodiments of the present application, the basic unit Ua includes a boundary line 100a. The boundary line 100a includes two first boundary segments 110a arranged opposite to each other, and a second boundary segment 120a for connecting the two first boundary segments 110a. Among them, the first boundary segment 110a is parallel to the magnetic field direction D1, and the second boundary segment 120a is perpendicular to the magnetic field direction D1. As shown in FIG. 31(b), when the current flows through the boundary line 100a, the current direction in the second boundary segment 120a is directed from one of the first boundary segments 110a to the other first boundary segment 110a. As shown in FIG31( c ), the magnetic field strength of the entire boundary line 100a is relatively low, the magnetic field strength of the area corresponding to the first boundary segment 110a in the boundary line 100a is relatively high, and the magnetic field strength corresponding to the central area of ​​the basic unit Ua is relatively low.

[0237] Figure 32(a) shows a top view of a basic unit Ua in some embodiments of the present application. Figure 32(b) shows a schematic diagram of the current flowing through the basic unit Ua in Figure 32(a). Figure 32(c) shows a magnetic field distribution diagram of the basic unit Ua in some embodiments of the present application.

[0238] As shown in FIG. 32( a), in some embodiments of the present application, the basic unit Ua includes a boundary line 100a and an inner line 200a. The boundary line 100a is arranged around the outer periphery of the inner line 200a. The boundary line 100a includes two first boundary segments 110a arranged opposite to each other, and a second boundary segment 120a for connecting the two first boundary segments 110a. Among them, the first boundary segment 110a is parallel to the magnetic field direction D1, and the second boundary segment 120a is perpendicular to the magnetic field direction D1. The inner line 200a includes a first inner segment 201a and a second inner segment 202a. Among them, the first inner segment 201a is located near a second boundary segment 120a and is parallel to the second boundary segment 120a. The first inner segment 201a can couple out an electrical signal from the second boundary segment 120a. The second inner segment 202a is located near another second boundary segment 120a and is parallel to another second boundary segment 120a. The second inner segment 202a is capable of coupling out an electrical signal from the other second boundary segment 120a.

[0239] As shown in FIG. 32( b ), when current flows through the boundary line 100 a , the current direction in the second boundary segment 120 a points from one first boundary segment 110 a to the other first boundary segment 110 a , and the first inner segment 201 a and the second inner segment 202 a induce corresponding currents.

[0240] As shown in FIG32( c ), the magnetic field strength of the entire boundary line 100a is relatively low, the magnetic field strength of the area corresponding to the first boundary segment 110a in the boundary line 100a is relatively high, and the magnetic field strength corresponding to the central area of ​​the basic unit Ua is relatively low.

[0241] By comparing FIG. 31( c ) and FIG. 32( c ), it is not difficult to find that the magnetic field strength in the central area of ​​the basic unit Ua in FIG. 32( c ) increases, which is mainly due to the increase in magnetic field strength caused by the induced current in the first inner segment 201a and the second inner segment 202a .

[0242] Figure 33(a) shows a top view of a basic unit Ua in some embodiments of the present application. Figure 33(b) shows a schematic diagram of the current flowing through the basic unit Ua in Figure 33(a). Figure 33(c) shows a magnetic field distribution diagram of the basic unit Ua in some embodiments of the present application.

[0243] As shown in FIG. 33 (a), in some embodiments of the present application, the basic unit Ua includes a boundary line 100a and an inner line 200a. The boundary line 100a is arranged around the outer periphery of the inner line 200a. The boundary line 100a includes two first boundary segments 110a arranged opposite to each other, and a second boundary segment 120a for connecting the two first boundary segments 110a. Among them, the first boundary segment 110a is parallel to the magnetic field direction D1, and the second boundary segment 120a is perpendicular to the magnetic field direction D1. The inner line 200a includes a first inner segment 201a, a second inner segment 202a and a third inner segment 203a. Among them, the first inner segment 201a is located near a second boundary segment 120a and is parallel to the second boundary segment 120a. The first inner segment 201a can couple out an electrical signal from the second boundary segment 120a. The second inner segment 202a is located near another second boundary segment 120a and is parallel to another second boundary segment 120a. The second inner segment 202a can couple out an electrical signal from another second boundary segment 120a. The third inner segment 203a connects the first inner segment 201a and the second inner segment 202a end to end. Moreover, at least part of the third inner segment 203a is parallel to the first inner segment 201a and the second inner segment 202a.

[0244] In some implementations, the third inner segment 203a is a broken line segment. In some other alternative implementations, the third inner segment 203a is a straight line segment. This application does not make specific limitations on this.

[0245] As shown in FIG. 33( b ), when current flows through the boundary line 100 a, the current direction in the second boundary segment 120 a is directed from one of the first boundary segments 110 a to the other first boundary segment 110 a. The first inner segment 201 a and the second inner segment 202 a induce corresponding currents. In the third inner segment 203 a, the current flows from the end connected to the second inner segment 202 a to the end connected to the first inner segment 201 a.

[0246] As shown in FIG33( c ), the magnetic field strength of the entire boundary line 100a is relatively low, the magnetic field strength of the area corresponding to the first boundary segment 110a in the boundary line 100a is relatively high, and the magnetic field strength corresponding to the central area of ​​the basic unit Ua is relatively low.

[0247] By comparing Figure 31(c) and Figure 33(c), it is not difficult to find that the magnetic field strength in the central area of ​​the basic unit Ua in Figure 33(c) decreases. This is mainly due to the induced current in the first internal segment 201a and the second internal segment 202a, which causes the current in the third internal segment 203a to have a component in the opposite direction to the current in the second boundary segment 120a, which further reduces the internal magnetic field strength of the basic unit Ua, and further increases the equivalent relative magnetic permeability corresponding to the basic unit Ua.

[0248] Fig.34 The magnetic field strength and equivalent magnetic permeability corresponding to the basic units Ua of different forms in some embodiments of the present application are shown. Among them, l01 represents the curve of the change of magnetic field strength with frequency corresponding to the boundary line 100a in Figure 31 (a). l02 represents the curve of the change of equivalent magnetic permeability with frequency corresponding to the boundary line 100a in Figure 31 (a). l11 represents the curve of the change of magnetic field strength with frequency corresponding to the boundary line 100a in Figure 32 (a). l12 represents the curve of the change of equivalent magnetic permeability with frequency corresponding to the boundary line 100a in Figure 32 (a). l21 represents the curve of the change of magnetic field strength with frequency corresponding to the boundary line 100a in Figure 33 (a). l22 represents the curve of the change of equivalent magnetic permeability with frequency corresponding to the boundary line 100a in Figure 33 (a). As shown in FIG. Fig.34 As shown by Figure 31(a) to Figure 32(a) 33(a), as the structure of the internal line 200a in the basic unit Ua becomes increasingly complex, the magnetic field intensity corresponding to the basic unit Ua gradually decreases, and the equivalent magnetic permeability corresponding to the basic unit Ua gradually increases.

[0249] In some application scenarios, when the incoming wave direction is not fixed, the rotationally symmetric structure can produce a consistent effect on the magnetic field in all directions, equivalent to a consistent magnetic permeability, thereby ensuring the application of dual polarization / circular polarization antennas that require waves from multiple directions. The following will be described in detail with reference to the accompanying drawings.

[0250] Figure 35(a) shows a top view of a dual-fed dual-polarization / circularly polarized antenna Aa in some embodiments of the present application. Figure 35(b) shows a bottom view of a dual-fed dual-polarization / circularly polarized antenna in some embodiments of the present application. In combination with Figure 35(a) and Figure 35(b), it can be seen that in some embodiments of the present application, the antenna Aa includes a first metal layer 10a, a dielectric layer (not shown) and a second metal layer 30a. Among them, the first metal layer 10a is fed, and the first metal layer 10a has two feeding terminals F1 and F2. Among them, the feeding directions of the feeding terminal F1 and the feeding terminal F2 can be perpendicular to each other. The second metal layer 30a is grounded. The first metal layer 10a, the dielectric layer and the second metal layer 30a constitute an electromagnetic structure Sa.

[0251] In some embodiments of the present application, the basic unit in the structure has the function of strengthening the magnetic field attenuation, and the basic unit also has rotational symmetry, which can be applied to the miniaturization and broadbandization of antennas and devices that require phase difference fields or different field directions to achieve certain specific functions such as broadband / circular polarization of multi-field coordination. The following will be described in detail with reference to the accompanying drawings.

[0252] Fig.36 FIG. 4 shows a stereogram of the electromagnetic structure Sa in some embodiments of the present application. Fig.36 As shown, the electromagnetic structure Sa includes a first metal layer 10a, a dielectric layer 20a and a second metal layer 30a. The first metal layer 10a is fed, and the second metal layer 30a is grounded. The first metal layer 10a includes a plurality of basic units Ua periodically arranged in a first plane. The basic unit Ua includes a boundary line 100a and an internal line 200a. The boundary line 100a is arranged around the periphery of the internal line 200a. The internal line 200a has rotational symmetry.

[0253] FIG. 37 (a) shows a schematic diagram of a basic unit Ua in some embodiments of the present application. As shown in FIG. 37 (a), the basic unit Ua includes a boundary line 100a and an inner line 200a. Wherein, the boundary line 100a is arranged around the periphery of the inner line 200a. The boundary line 100a includes a pair of first boundary segments 110a arranged oppositely and a pair of second boundary segments 120a arranged oppositely. The number of the inner line 200a is one, and the inner line 200a includes a first inner segment 201a, a second inner segment 202a and a third inner segment 203a. Wherein, the first inner segment 201a is located near one of the second boundary segments 120a, and the first inner segment 201a is parallel to the second boundary segment 120a. The second inner segment 202a is located near another second boundary segment 120a, and the second inner segment 202a is parallel to another second boundary segment 120a. The third inner segment 203a is used to connect the first inner segment 201a and the second inner segment 202a. It is not difficult to find that the structure shown in Figure 37(a) is quite similar to the structure shown in Figure 33(a).

[0254] FIG37( b) shows a schematic diagram of a basic unit Ua in some embodiments of the present application. As shown in FIG37( b), the basic unit Ua includes a borderline 100a, an inner line 200a-1 and an inner line 200a-2. Wherein, the borderline 100a is arranged around the periphery of the inner line 200a-1 and the inner line 200a-2. The borderline 100a includes a pair of first boundary segments 110a arranged oppositely and a pair of second boundary segments 120a arranged oppositely. The inner line 200a-1 has the same structure as the inner line 200a in FIG37( a), and the layout position relative to the borderline 100a is also the same. The inner line 200a-2 is the same as the inner line 200a in FIG37( a), but the layout position relative to the borderline 100a is similar. The position of the inner line 200a-2 can be understood as the position of the inner line 200a-1 after rotating 90° around the center point. The inner line 200a-2 includes a first inner segment 201a-1, a second inner segment 202a-1 and a third inner segment 203a-1. The first inner segment 201a-1 is located near one of the first boundary segments 110a, and the first inner segment 201a-1 is parallel to the first boundary segment 110a. The second inner segment 202a-1 is located near another first boundary segment 110a, and the second inner segment 202a-1 is parallel to another first boundary segment 110a. The third inner segment 203a-1 is used to connect the first inner segment 201a-1 and the second inner segment 202a-1. In addition, the third inner segment 203a-1 is connected to the third inner segment corresponding to the inner line 200a-1.

[0255] FIG37( c) shows a schematic diagram of a basic unit Ua in some embodiments of the present application. As shown in FIG37( c), the basic unit Ua includes a boundary line 100a, an inner line 200a-3 and an inner line 200a-4. Wherein, the boundary line 100a is arranged around the periphery of the inner line 200a-3 and the inner line 200a-4. The inner line 200a-3 corresponds to the inner line 200a-1 in FIG37( b), and the inner line 200a-4 corresponds to the inner line 200a-2 in FIG37( b). The difference between FIG37( c) and FIG37( b) is that the distance between any two adjacent segments arranged in parallel in the inner line 200a-3 and the inner line 200a-4 in FIG37( c) is equal. That is, the inner line 200a-3 and the inner line 200a-4 are separated and the distance between adjacent segments is the same.

[0256] It can be understood that the above-mentioned rotational symmetry schemes of the internal lines are only some examples, and other forms of rotational symmetry schemes of the internal lines are also within the protection scope of the present application, and the present application does not make any specific limitations on this.

[0257] While the basic unit in the above electromagnetic structure has the function of strengthening the magnetic field attenuation, its basic unit also has rotational symmetry, and can be applied to broadband / circular polarization of multi-field coordination, etc., which require phase difference fields or different field directions, to achieve miniaturization and broadbandization of antennas and devices with certain specific functions.

[0258] Fig.38 FIG. 1 shows a three-dimensional diagram of the electromagnetic structure Sa of the present application. Fig.38 As shown, in the basic unit Ua of the electromagnetic structure, the bending boundary line 100a and the internal line 200a are overlapped and arranged, and then the formed new basic units are arranged periodically along the x direction. The electrical size of the basic unit Ua is much smaller than the working wavelength.

[0259] Fig.39 FIG. 1 shows a three-dimensional diagram of the electromagnetic structure Sa of the present application. Fig.39 As shown, the basic unit Ua in the electromagnetic structure can be multiple (for example, including basic unit Ua1 and basic unit Ua2), and the multiple basic units are periodically arranged along the x direction. The electrical size of the basic unit Ua1 and the basic unit Ua2 is much smaller than the working wavelength.

[0260] In some embodiments of the present application, the electromagnetic structure can be stacked to form an electromagnetic assembly, and the number of stacked layers is not limited. Among them, the electromagnetic assembly can be understood as a new electromagnetic structure. In some implementations, the stacked electromagnetic structures are stacked back to back. In some other replaceable implementations, the stacked electromagnetic structures are stacked face to face. In some other replaceable implementations, the stacked electromagnetic structures are stacked in the same direction. The following will be described in detail with reference to the accompanying drawings.

[0261] Fig.40An exploded view of antenna Aa in some embodiments of the present application is shown. Fig.41 Shows Fig.40 The corresponding stereogram of the electromagnetic assembly. Fig.40 and Fig.41 It can be seen that in some embodiments of the present application, the electromagnetic assembly includes a first electromagnetic structure Sa1 and a second electromagnetic structure Sa2 that are stacked, and the second metal layer in the first electromagnetic structure Sa1 faces the second metal layer in the second electromagnetic structure Sa2.

[0262] In some implementations, the second metal layer in the first electromagnetic structure Sa1 and the second metal layer in the second electromagnetic structure Sa2 are formed separately. In other alternative implementations, the second metal layer in the first electromagnetic structure Sa1 and the second metal layer in the second electromagnetic structure Sa2 are formed integrally.

[0263] Figure 42(a) shows the relationship between the projection area S1 where the basic unit in the first electromagnetic structure Sa1 is located and the projection area S2 where the basic unit in the second electromagnetic structure Sa2 is located in some embodiments of the present application. Figure 42(b) shows the relationship between the projection area S1 where the basic unit in the first electromagnetic structure Sa1 is located and the projection area S2 where the basic unit in the second electromagnetic structure Sa2 is located in some embodiments of the present application. Figure 42(c) shows the relationship between the projection area S1 where the basic unit in the first electromagnetic structure Sa1 is located and the projection area S2 where the basic unit in the second electromagnetic structure Sa2 is located in some embodiments of the present application. Figure 42(d) shows the relationship between the projection area S1 where the basic unit in the first electromagnetic structure Sa1 is located and the projection area S2 where the basic unit in the second electromagnetic structure Sa2 is located in some embodiments of the present application.

[0264] As shown in FIG. 42(a), in some of the implementations, the projection area S1 where the basic unit in the first electromagnetic structure Sa1 is located and the projection area S2 where the basic unit in the second electromagnetic structure Sa2 is located completely overlap. As shown in FIG. 42(b), in some other replaceable implementations, the projection area S1 where the basic unit in the first electromagnetic structure Sa1 is located is located within the projection area S2 where the basic unit in the second electromagnetic structure Sa2 is located. As shown in FIG. 42(c), in some other replaceable implementations, the projection area S1 where the basic unit in the first electromagnetic structure Sa1 is located partially overlaps with the projection area S2 where the basic unit in the second electromagnetic structure Sa2 is located. As shown in FIG. 42(d), in some other replaceable implementations, the projection area S1 where the basic unit in the first electromagnetic structure Sa1 is located and the projection area S2 where the basic unit in the second electromagnetic structure Sa2 is located do not overlap at all.

[0265] Fig.43An exploded view of antenna Aa in some embodiments of the present application is shown. Fig.44 Shows Fig.43 The corresponding stereogram of the electromagnetic assembly. Fig.43 and Fig.44 It can be seen that in some embodiments of the present application, the electromagnetic assembly includes a first electromagnetic structure Sa1 and a second electromagnetic structure Sa2 that are stacked, and the first metal layer in the first electromagnetic structure Sa1 faces the first metal layer in the second electromagnetic structure Sa2.

[0266] In some implementations, a dielectric layer is disposed between the first metal layer in the first electromagnetic structure Sa1 and the first metal layer in the second electromagnetic structure Sa2 to separate the first metal layers of the two electromagnetic structures.

[0267] Fig.45 An exploded view of antenna Aa in some embodiments of the present application is shown. Fig.46 Shows Fig.45 The corresponding stereogram of the electromagnetic assembly. Fig.45 and Fig.46 It can be seen that in some embodiments of the present application, the electromagnetic assembly includes a first electromagnetic structure Sa1 and a second electromagnetic structure Sa2 that are stacked, and the second metal layer in the first electromagnetic structure Sa1 faces the first metal layer in the second electromagnetic structure Sa2.

[0268] In some implementations, a dielectric layer is disposed between the second metal layer in the first electromagnetic structure Sa1 and the first metal layer in the second electromagnetic structure Sa2 to separate the second metal layer in the first electromagnetic structure Sa1 and the first metal layer in the second electromagnetic structure Sa2.

[0269] In some embodiments of the present application, Fig.45 The corresponding antenna can be applied to antenna combinations of different sizes, and the first metal layer in the antenna corresponding to the second electromagnetic structure Sa2 can be used as the second metal layer in the antenna corresponding to the first electromagnetic structure Sa1.

[0270] In some embodiments of the present application, the electromagnetic structure in the present application is mainly used for loading antenna units, resonators and other devices with upper and lower parallel metal layers. The loading position can be the metal surface on the opposite side of the antenna or on the radiation structure of the antenna, mainly to achieve the miniaturization of the antenna / device and expand the working bandwidth.

[0271] Figure 47(a) shows a top view of the slot antenna Ab in some embodiments of the present application. Figure 47(b) shows a bottom view of the slot antenna Ab in some embodiments of the present application. In combination with Figure 47(a) and Figure 47(b), it can be seen that in some embodiments of the present application, the slot antenna Ab includes a first metal layer 10b, a dielectric layer (not shown) and a second metal layer 30b which are stacked in sequence. Among them, a slot is opened on the first metal layer 10b, and the second metal layer 30b has a plurality of basic units Ub arranged periodically at a position opposite to the slot. It can be understood that the basic unit Ub in the slot antenna Ab can specifically refer to the basic unit Ua in the aforementioned patch antenna Aa, and will not be described in detail here.

[0272] It can be understood that the slot antenna includes two layers of metal, one of which has a slot, and the slot radiates electromagnetic energy outward, and the electromagnetic structure is etched on the metal on the other side of the slot.

[0273] Figure 48(a) shows a top view of the cavity antenna Ac in some embodiments of the present application. Figure 48(b) shows a bottom view of the cavity antenna Ac in some embodiments of the present application. In combination with Figure 48(a) and Figure 48(b), it can be seen that in some embodiments of the present application, the cavity antenna Ac includes a first metal layer 10c, a dielectric layer (not shown) and a second metal layer 30c which are stacked in sequence. Among them, a plurality of basic units Uc are periodically arranged on the first metal layer 10c. It can be understood that the basic unit Uc in the slot antenna Ac can specifically refer to the basic unit Ua in the aforementioned patch antenna Aa, and will not be described in detail here.

[0274] It can be understood that the cavity antenna is the cavity itself that radiates, and the feeding point can be fed just like a normal antenna, either coupled or direct fed. The structure is etched on the metal shell of the cavity, and the magnetic field of that part of the cavity is affected, which is equivalent to filling it with magnetic material, and the antenna is miniaturized. The etching of the electromagnetic structure must choose a point with a strong magnetic field, which is consistent with the principle that real magnetic materials must be loaded in a position with a magnetic field to have the effect of changing the magnetic field. In some application scenarios, cavity antennas can be used in laptops, such as Fig.49 in the rectangular box.

[0275] Table 1 Summary of antenna radiation efficiency in different application scenarios of this application

[0276] Antenna form and its resonance mode Resonant frequency Antenna Radiation Efficiency Initial cavity antenna fundamental mode 5.17GHz -0.3dB Loading electromagnetic structure cavity antenna fundamental mode 3.81GHz -0.5dB Initial slot antenna fundamental mode 3.06GHz -0.3dB Loading electromagnetic structure slot antenna fundamental mode 2.6GHz -0.4dB Initial slot antenna high-order modes 6.2GHz -0.3dB Loading electromagnetic structure slot antenna high-order mode 4.8GHz -0.3dB

[0277] It is not difficult to find from Table 1 that the antenna radiation efficiency of the technical solution in this application is relatively low in various application scenarios. In addition, the resonant frequency of the antenna using the technical solution of this application is relatively low, which facilitates the integration of the electromagnetic structure in this application in the antenna.

[0278] The present application also provides an electronic device, comprising any one of the aforementioned antennas, which will not be described in detail here.

[0279] The present application also provides a communication device, comprising any one of the aforementioned antennas, which will not be described in detail here.

[0280] It should be noted that in this specification, the aforementioned implementation methods are only partial implementation methods of the solutions provided in this application. Other technical solutions with the same or similar principles are also within the protection scope of this application, and this application does not provide examples one by one.

[0281] In this application, like reference numerals and letters denote similar items in the following drawings, and thus, once an item is defined in one drawing, further definition and explanation thereof is not required in the subsequent drawings.

[0282] The above is a description of the implementation mode of the present application by specific specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. Although the description of the present application will be introduced in conjunction with some embodiments, this does not mean that the features of this application are limited to the implementation mode. On the contrary, the purpose of introducing the application in conjunction with the implementation mode is to cover other options or modifications that may be extended based on the claims of the present application. In order to provide a deep understanding of the present application, the following description will include many specific details. The present application can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present application, some specific details will be omitted in the description. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0283] In the description of the present application, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "outside", "inside", "circumferential", "radial", "axial" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0284] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "setting", "installation", "connection" and "fitting" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0285] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. An electromagnetic structure, characterized in that: The electromagnetic structure comprises a first metal layer, a dielectric layer, and a second metal layer stacked in sequence along a stacking direction, wherein one of the first metal layer and the second metal layer is used for power feeding, and the other is used for grounding; The first metal layer includes a plurality of basic units periodically arranged in an arrangement plane, the electrical dimensions of the basic units are sub-wavelength, each of the basic units includes a boundary line, the basic unit is at least partially hollowed out in the area enclosed by the boundary line, and the arrangement plane is perpendicular to the stacking direction.

2. The electromagnetic structure according to claim 1, characterized in that: The boundary line includes: two first boundary segments, each of which extends in a direction parallel to a magnetic field direction of the electromagnetic structure; A second boundary segment, wherein an extension direction of the second boundary segment intersects with a magnetic field direction corresponding to the electromagnetic structure, and the second boundary segment is used to connect two of the first boundary segments.

3. The electromagnetic structure according to claim 2, characterized in that: The second boundary segment extends in a reciprocating manner within the arrangement plane.

4. The electromagnetic structure according to claim 2 or 3, characterized in that: Each of the basic units further includes an inner line located in the area enclosed by the boundary line, and the inner line extends back and forth in the arrangement plane.

5. The electromagnetic structure according to claim 4, characterized in that: The internal lines include: two first inner segments, each of the first inner segments being coupled to one of the second boundary segments; The second internal segment is used to connect the two first internal segments between two of the second internal segments end to end.

6. The electromagnetic structure according to claim 4 or 5, characterized in that: The number of the inner lines is at least two, and at least two of the inner lines are relatively rotated and superimposed on each other.

7. The electromagnetic structure according to claim 6, characterized in that: At least two of the inner lines are spaced apart and the distance between adjacent segments is the same.

8. The electromagnetic structure according to any one of claims 1 to 7, characterized in that: The plurality of basic units are of at least two types, and each type of the basic units is periodically arranged in the arrangement plane.

9. The electromagnetic structure according to any one of claims 1 to 8, characterized in that: The arrangement plane includes a first direction and a second direction intersecting each other, and a plurality of the basic units are periodically arranged in the first direction and / or in the second direction.

10. The electromagnetic structure according to claim 9, characterized in that: The first direction is perpendicular to the second direction.

11. The electromagnetic structure according to claim 9 or 10, characterized in that: The first direction is parallel to the magnetic field direction of the electromagnetic structure.

12. The electromagnetic structure according to any one of claims 1 to 11, characterized in that: The outline of the boundary line includes any one of a square, a rectangle, a triangle, a circle and an ellipse.

13. An electromagnetic component, characterized in that: The electromagnetic assembly comprises two electromagnetic structures according to any one of claims 1 to 12, and the two electromagnetic structures are arranged in a superimposed manner.

14. The electromagnetic assembly according to claim 13, characterized in that Among the two electromagnetic structures, the first metal layer of one electromagnetic structure faces the first metal layer of the other electromagnetic structure.

15. The electromagnetic assembly according to claim 13, characterized in that Among the two electromagnetic structures, the second metal layer of one electromagnetic structure faces the second metal layer of the other electromagnetic structure.

16. The electromagnetic assembly according to claim 15, characterized in that The second metal layers of the two electromagnetic structures are integrally formed.

17. The electromagnetic assembly according to claim 13, characterized in that In the two electromagnetic structures, the first metal layer of one electromagnetic structure faces the second metal layer of the other electromagnetic structure.

18. The electromagnetic assembly according to claim 13, characterized in that In the two electromagnetic structures, the first metal layer of one electromagnetic structure serves as the second metal layer of the other electromagnetic structure.

19. The electromagnetic assembly according to any one of claims 13 to 18, characterized in that The relative relationship between the two electromagnetic structures includes any one of the following: The two electromagnetic structures have the same structure and size; or The two electromagnetic structures have the same structure and are in proportional size; or The two electromagnetic structures are different in structure.

20. The electromagnetic assembly according to any one of claims 13 to 19, characterized in that The superposition method of the two electromagnetic structures includes any one of the following: The directions of the first metal layer pointing to the second metal layer in the two electromagnetic structures are consistent; or In the two electromagnetic structures, the directions in which the first metal layer points to the second metal layer are opposite.

21. An antenna, characterized in that: The antenna comprises the electromagnetic structure according to any one of claims 1 to 12.

22. The antenna according to claim 21, characterized in that The antenna includes any one of a patch antenna, a cavity antenna, a slot antenna and a strip antenna.

23. An electronic device, characterized in that: The electronic device comprises the antenna according to claim 21 or 22.

24. A communication device, characterized in that: The communication device comprises the antenna according to claim 21 or 22.

Images