Batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations

Abstract

The present disclosure relates to batch processing apparatuses, systems, and related methods and structures for epitaxial deposition operations. In one embodiment, an apparatus for substrate processing includes a cartridge. The cartridge is at least partially supported by the base assembly. The cartridge includes a plurality of levels arranged relative to each other in a vertical direction, each level of the plurality of levels including a support surface configured to support a substrate. A level pitch between adjacent levels of the plurality of levels is 25 mm or greater, and the level pitch is defined between the support surfaces of the adjacent levels.

Description

Technical Field

[0001] The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. Background Art

[0002] Semiconductor substrates are processed for a wide variety of applications, including the production of integrated devices and micro-devices. However, operations, such as epitaxial deposition operations, can be time-consuming and costly, with limited capacity and throughput. Operations can also be limited in terms of film growth rates. In addition, the hardware can involve relatively large dimensions, occupying a large footprint in a manufacturing facility. Furthermore, operations can involve obstacles in temperature control, gas control, and / or substrate center-to-edge control and adjustability. Such obstacles can be exacerbated in relatively complex processing operations.

[0003]

[0006] Therefore, a need exists for improved thermal processing chambers in semiconductor processing. Summary of the invention

[0004] The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations.

[0005] In one embodiment, an apparatus for substrate processing includes a chamber body, the chamber body includes a processing space, and a plurality of gas injection channels, the plurality of gas injection channels are formed in the chamber body and are in fluid communication with the processing space. The chamber body includes one or more exhaust channels, the one or more exhaust channels are formed in the chamber body opposite to the plurality of gas injection channels, and the one or more exhaust channels are in fluid communication with the processing space. The apparatus includes: one or more heat sources, the one or more heat sources are configured to generate heat; a base assembly, the base assembly is positioned in the processing space; and a box, the box is positioned in the processing space and is at least partially supported by the base assembly. The box includes: a plurality of levels, the plurality of levels are arranged relative to each other in a vertical direction, each of the plurality of levels includes a support surface, the support surface is configured to support a substrate. The level spacing between adjacent levels in the plurality of levels is 25 mm or more, and the level spacing is defined between the support surfaces of adjacent levels.

[0006] In one embodiment, an apparatus for substrate processing includes a chamber body, the chamber body including: a processing space; a plurality of gas injection channels, the plurality of gas injection channels are formed in the chamber body; and one or more exhaust channels, the one or more exhaust channels are formed in the chamber body opposite to the plurality of gas injection channels. The apparatus includes one or more heat sources, the one or more heat sources are configured to generate heat; a susceptor assembly, the susceptor assembly is positioned in the processing space; and a flow guide structure, the flow guide structure is positioned in the processing space. The flow guide structure includes one or more first flow dividers, the one or more first flow dividers divide the processing space into a plurality of flow levels. The flow guide structure includes one or more second flow dividers, the one or more second flow dividers are oriented to intersect with the one or more first flow dividers and divide each of the plurality of flow levels into a plurality of flow segments.

[0007] In one embodiment, a method of processing multiple substrates includes positioning a first substrate in a processing volume of a chamber, the first substrate having a diameter. The method includes positioning a second substrate in the processing volume. The step of positioning the second substrate includes positioning the second substrate to be spaced apart from the first substrate by a substrate spacing, the substrate spacing being proportional to the diameter of the first substrate, and the ratio being 1:12 or greater. The method includes flowing one or more process gases into the processing volume, heating the first substrate and the second substrate, and simultaneously depositing one or more layers on each of the first substrate and the second substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to understand the above-mentioned features of the present disclosure in more detail, a more specific description of the present disclosure briefly summarized above may be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of the scope, as the present disclosure may admit to other equally effective embodiments.

[0009] Figure 1 is a schematic top view of a system for processing a substrate according to one embodiment.

[0010] Figure 2 is a schematic side cross-sectional view of a processing apparatus according to one embodiment.

[0011] Figure 3 is a schematic top view of a chamber body according to one embodiment, which chamber body can be used as Figure 2 The chamber body is shown.

[0012] Figure 4 According to one embodiment Figure 3 A schematic side cross-sectional view of a portion of a chamber body is shown.

[0013] Figure 5A is a schematic top plan view of a chamber body according to one embodiment, which chamber body can be used as Figure 2 The chamber body is shown.

[0014] Figure 5B is a schematic top plan view of a chamber body according to one embodiment, which chamber body can be used as Figure 2 The chamber body is shown.

[0015] Figure 5C is a schematic top plan view of a chamber body according to one embodiment, which chamber body can be used as Figure 2 The chamber body is shown.

[0016] Figure 5D is a schematic top plan view of a chamber body according to one embodiment, which chamber body can be used as Figure 2 The chamber body is shown.

[0017] Figure 5E According to one embodiment Figure 2 A schematic top plan view of the chamber body is shown.

[0018] Figure 6 is a schematic side cross-sectional view of a processing apparatus according to one embodiment.

[0019] Figure 7 is a schematic side cross-sectional view of a processing apparatus according to one embodiment.

[0020] Figure 8 Operations of a method for batch processing a plurality of substrates according to one embodiment are illustrated.

[0021] Fig. 9 According to one embodiment, the Figure 2 Schematic top plan view of a single upper window assembly above the chamber body on the first chamber side and the second chamber side.

[0022] Fig.10 is a schematic side cross-sectional view of a processing apparatus according to one embodiment.

[0023] Fig.11 According to one embodiment Fig.10 An enlarged view of the schematic side cross-sectional view of the processing device shown in .

[0024] Fig.12 According to one embodiment Fig.10 and 11 Schematic top view of the processing device shown in .

[0025] Fig.13According to one embodiment Fig.10 and 11 Schematic perspective view of the box shown in .

[0026] Fig.14 is a schematic partial side cross-sectional view of a box and a flow guide structure according to one embodiment.

[0027] Fig.15 According to one embodiment Fig.10 An enlarged view of the schematic side cross-sectional view of the processing device shown in .

[0028] Fig.16 is a schematic diagram of a method of processing a plurality of substrates according to one embodiment.

[0029] Fig.17 is a schematic diagram of a graph plotting average growth rate versus substrate spacing according to one embodiment.

[0030] Fig.18 is a schematic diagram plotting gas velocity versus position above a substrate according to one embodiment.

[0031] Fig.19 According to one embodiment, the box 1930 and Fig.14 Schematic partial side cross-sectional view of the flow guide structure shown in .

[0032] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0033] The present disclosure relates to batch processing equipment, systems and related methods and structures for epitaxial deposition operations. In one or more embodiments, a processing equipment includes a dual body, the dual body including two processing spaces formed therein. The two processing spaces can share a gas panel and / or an exhaust pumping system, such as a pumping system having a pressure control valve and a vacuum pump. The dual body with a shared gas panel and / or a shared exhaust pump helps to reduce equipment costs and reduce system footprint, while helping to achieve simultaneous processing operations on two processing spaces. Each of the two processing spaces can include a respective box that supports multiple substrates during processing, thereby facilitating simultaneous processing operations on two groups of multiple substrates (in each processing space) to increase production. The processing equipment includes one or more side heating elements (e.g., side heating lamps, side resistive heaters, side LEDs and / or side lasers), which are arranged outside the first processing space, outside the second processing space, and / or between the first processing space and the second processing space. In one or more embodiments, the box supports multiple substrates, and the substrate spacing between at least two substrates is proportional to the diameter of one or more substrates. The ratio is 1:12 or higher, and / or the substrate spacing is 15 mm or higher. Substrate spacing facilitates simultaneous processing (eg, batch processing) of multiple substrates to increase throughput while reducing chamber footprint, increasing growth rates, and enhancing device performance. Substrate spacing also facilitates adjustability of processing parameters.

[0034] The present disclosure contemplates that terms such as "couple" and "coupled" may include, but are not limited to, welding, fusing, melting together, interference fit, and / or fastening such as by using bolts, threaded connections, pins, and / or screws. The present disclosure contemplates that terms such as "couple" and "coupled" may include, but are not limited to, integrally formed. The present disclosure contemplates that terms such as "couple" and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as links.

[0035] Figure 1 is a schematic top view of a system 100 for processing substrates according to one embodiment. The system 100 includes a cluster tool 180. The cluster tool 180 includes a factory interface 102, one or more transfer chambers 108 (one shown) in which a transfer robot 110 is disposed. The cluster tool 180 includes one or more process chambers 124, 125, 126, 127 (four shown) and one or more clean chambers 128 (one shown) - for example, pre-clean chambers, which are mounted to a main frame 151 of a single cluster tool 180. Figure 1In the illustrated embodiment, two processing chambers are disposed on opposite sides of the transfer chamber 108 and include a cleaning chamber 128. The present disclosure contemplates that a greater or lesser number of processing chambers and / or pre-cleaning chambers may be used. In one or more embodiments, the transfer robot 110 is configured to simultaneously load and unload substrates to and from each of two processing spaces of one of the processing chambers 124, 125, 126, 127. In one or more embodiments, the transfer robot 110 is configured to simultaneously load and unload two or more substrates to and from each of two boxes located in two processing spaces of one of the processing chambers 124, 125, 126, 127. Figure 1 In the illustrated embodiment, the transfer robot 110 is configured to load and unload at least four substrates 109 simultaneously.

[0036] exist Figure 1 In the illustrated embodiment, the factory interface 102 includes a docking station 140 and a factory interface robot 142 to facilitate the transfer of cassettes and / or substrates. The docking station 140 is configured to receive one or more front opening wafer transfer boxes (FOUPs) 149. In one embodiment that may be combined with other embodiments, each factory interface robot 142 includes a support structure 148 (e.g., a blade) configured to transfer cassettes and / or substrates from the factory interface 102 to the load lock chambers 104, 106. The load lock chambers 104, 106 have corresponding doors 150, 152 that interface with the factory interface 102 and corresponding doors 154, 156 that interface with the transfer chamber 108. One or more processing chambers 124, 125, 126, 127, 128 have corresponding doors that interface with the transfer chamber 108. These doors may include, for example, slit openings with slit valves for allowing the transfer robot 110 to pass boxes and / or substrates therethrough and for providing a seal between the chambers to prevent gas from passing between the chambers. The doors may be opened to pass boxes and / or substrates therethrough and otherwise closed.

[0037] The system 100 includes a controller 190 configured to control the system 100 or components thereof. For example, the controller 190 can control the operation of the system 100 using direct control of the chambers 124, 125, 126, 127, 128 of the system 100, or by controlling controllers associated with the chambers 124, 125, 126, 127, 128. In operation, the controller 190 enables data and feedback to be collected from the various chambers to coordinate and control the performance of the system 100.

[0038] The controller 190 generally includes a central processing unit (CPU) 192, a memory 194, and support circuits 196. The CPU 192 may be one of any form of general purpose processor that may be used in an industrial environment. The memory 194 or non-transitory computer readable medium may be accessed by the CPU 192 and may be one or more memories such as a random access memory (RAM), a read only memory (ROM), a floppy disk, a hard disk, or any other form of digital storage located locally or remotely. The support circuits 196 are coupled to the CPU 192 and may include caches, clock circuits, input / output subsystems, power supplies, and the like.

[0039] The various methods (e.g., method 800) and operations disclosed herein can generally be implemented by CPU 192 executing computer instruction codes (e.g., software programs) stored in memory 194 (or in the memory of a particular processing chamber) under the control of CPU 192. When the computer instruction codes are executed by CPU 192, CPU 192 controls the chamber to operate according to the various methods and operations described herein. In one embodiment that can be combined with other embodiments, memory 194 (a non-transitory computer-readable medium) includes instructions stored therein that, when executed, cause the methods (e.g., method 800) and operations (e.g., operations 801, 802, 803, 804, 806, 808, 810) described herein to be performed. Controller 190 can communicate with common gas panel 208 and common pumping system (common pumping system can include common pump 210 and common exhaust valve 273) to, for example, cause multiple operations to be performed.

[0040] Other processing systems with other configurations are contemplated. For example, more or fewer processing chambers may be coupled to the transfer device. Figure 1 In the illustrated embodiment, the transfer apparatus includes a transfer chamber 108. In other embodiments, more or fewer transfer chambers (eg, one transfer chamber) may be implemented as a transfer apparatus in a system for processing a substrate.

[0041] Figure 2 is a schematic side cross-sectional view of a processing device 200 according to one embodiment. The processing device 200 can be used, for example, Figure 1 At least a portion of a processing chamber 124, 125, 126, 127 is shown. Figure 2 The cross-sectional view shown in FIG. Figure 5E The section shown in FIG. 2-2 is taken for the purpose of visual clarity. Figure 5E The side heat sources 418a-418d shown in FIG. Figure 2. The processing apparatus 200 includes a processing chamber having a first chamber side 201a and a second chamber side 201b. Each chamber side 201a, 201b defines a respective processing volume 224, 226. The first chamber side 201a and the second chamber side 201b are substantially identical to each other (e.g., mirror images of each other). The chamber sides 201a, 201b share a chamber body 230 and a chamber body bottom 234. The chamber sides 201a, 201b may additionally include a common cover (not shown). The chamber sides 201a, 201b are mirror images of each other relative to a reference plane 203. The reference plane 203 is a center plane that divides the processing chamber.

[0042] The first chamber side 201a defines a first processing space 224 for processing a plurality of first substrates 255 supported by the first box 257. The first chamber side 201a includes a first upper window 216a, such as a dome, disposed between the first cover 204a and the first processing space 224. The first chamber side 201a includes a first lower window 218a disposed below the first processing space 224. One or more first upper radiant heat sources 206a are located above the first processing space 224 and the first upper window 216a. One or more first upper radiant heat sources 206a may be radiant heat sources such as lamps, such as halogen lamps. The present disclosure contemplates that other heat sources (in addition to or in place of lamps) may be used for the various heat sources described herein. For example, resistive heaters, light emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein. One or more first upper heat sources 206a are disposed between the first upper window 216a and the first cover 204a. The first upper heat source 206a is positioned to provide uniform heating of the first substrate 255. One or more first lower heat sources 238a are located below the first processing space 224 and the first lower window 218a. The first lower heat sources 238a are disposed between the first lower window 218a and the chamber body bottom 234. The first lower heat sources 238a are positioned to provide uniform heating to the first substrate 255.

[0043] The second chamber side 201b defines a second processing space 226 for processing a plurality of second substrates 259 supported by the second box 261. The second chamber side 201b includes a second upper window 216b, such as a dome. The second upper window 216b is disposed between the second cover 204b and the second processing space 226. The second chamber side 201b includes a second lower window 218b, such as a dome disposed below the second processing space 226. One or more second upper heat sources 206b are located above the second processing space 226 and the second upper window 216b. The second upper heat source 206b is disposed between the second upper window 216b and the second cover 204b. The second upper heat source 206b is positioned to provide a predetermined heating of the second substrate 259. One or more second lower heat sources 238b are located below the second processing space 226 and the second lower window 218b. The second lower heat source 238b is disposed between the second lower window 218b and the chamber body bottom 234. The second lower heat source 238b is positioned to provide predetermined heating of the second substrate 259.

[0044] Each of the first box 257 and the second box 261 includes a plurality of levels, respectively, and the plurality of levels corresponds to the corresponding plurality of substrates 255, 259. Each level of each box 257, 261 includes one or more arc supports 263. Each arc support 263 has a first inner flange 265, and the first inner flange 265 supports one of the corresponding first substrates 255 or second substrates 259. Each level of each box 257, 261 includes an upper opening 267 above the one or more arc supports 263 and a lower opening 269 below the one or more arc supports 263. Each arc support 263 may include an integral structure such as a ring or may include two structures spaced apart from each other. Each box 257, 261 can simultaneously support two or more substrates 255, 259 for processing (for example, each box has twelve or more substrates 255, 259). In Figure 2 In the illustrated embodiment, each cassette 257, 261 supports twelve substrates 255, 259. Each cassette 257, 261 may support two substrates 255, 259, three substrates 255, 259, or six substrates 255, 259.

[0045] The first and second upper windows 216a, 216b and the first and second lower windows 218a, 218b may be transparent to infrared radiation (e.g., transparent by transmitting at least 95% of infrared radiation). The first and second upper windows 216a, 216b and the first and second lower windows 218a, 218b may be quartz materials. In one or more embodiments, each of the first and second upper windows 216a, 216b includes an inner window 293 and an outer window support 294. The inner window 293 may be a thin quartz window and partially defines the processing space 224, 226. The outer window support 294 supports the inner window 293 and is at least partially disposed in the support groove 304 (see Figure 3 and Figure 4 In one or more embodiments, the first and second upper windows 216a, 216b may be a single window, such that a single upper window assembly 900 is disposed above the first chamber side 201a and the second chamber side 201b (see Fig. 9 ). The single upper window assembly 900 can help eliminate pressure gradients across the first and second chamber sides 201a, 201b and reduce temperature gradients across the single upper window 916. As an example, a single upper radiant heat assembly (e.g., multiple lamps coupled to a single lamp head) can be used across the two processing volumes 224, 226. The single upper window 916 can reduce or eliminate the need for a center wall (e.g., center wall 232), which can help reduce or eliminate pressure gradients. The center wall 232 can be modified to partially separate the first processing volume 224 from the second processing volume 226. As an example, the center wall 232 can be modified to include a gap that fluidly connects the two processing volumes 224, 226 (e.g., similar to Fig. 9 One or more channels (e.g., balancing ports 240) may be formed through the central wall 232 to fluidically connect the two processing volumes 224, 226, which helps to reduce or eliminate pressure gradients. Fig. 9 The single upper window 916 is described in more detail in and the accompanying text.

[0046] The processing apparatus 200 includes first and second pedestal assemblies 250 and 252, which are disposed in the first and second processing spaces 224, 226, respectively. A liner 220 is disposed in each of the first and second chamber sides 201a, 201b and surrounds each of the pedestal assemblies 250, 252. The pedestal assembly 250 is at least partially disposed in the first chamber side 201a and the pedestal assembly 252 is at least partially disposed in the second chamber side 201b. The liner 220 isolates the chamber body 230 from the processing chemicals in the first and second processing spaces 224, 226. Each of the first and second chamber sides 201a, 201b includes a liner 220. The chamber body 230 is disposed between the upper window 216 and the lower window 218. The liner 220 is disposed in the first chamber side 201a and the second chamber side 201b. Each liner 220 is disposed between one of the processing spaces 224, 226 and the chamber body 230. The exhaust chamber 270 partially surrounds the processing spaces 224 , 226 , and one or more exhaust ports 272 a , 272 b are formed through the liner 220 connecting the exhaust chamber 270 and the processing spaces 224 , 226 .

[0047] The first and second chamber sides 201a, 201b share a gas panel 208 and a pump 210, such as a vacuum pump. The gas panel 208 can be two separate gas panels or a common gas panel. When a common gas panel 208 is used, the first chamber side 201a and the second chamber side 201b are both provided with gas by the same gas panel 208. The gas panel 208 provides the processing gas to the first and second processing spaces 224, 226 through the conduit 223 and the first and second gas injection channels 282a, 282b. The gas panel 208 evenly distributes the gas between the first processing space 224 and the second processing space 226. The gas panel 208 is connected to the conduit 223. The conduit 223 is divided into two additional conduits 227a, 227b. The conduit 223 may include a flow splitter controller. The flow splitter controller (not shown) is disposed between the conduit 223 and the conduits 227a, 227b. The flow splitter controller controls the gas flowing to each conduit 227a, 227b. In one or more embodiments, the flow controller includes a valve or a mass flow controller. Two additional conduits 227a, 227b distribute gas from the conduit 223 to the first and second gas injection channels 282a, 282b, respectively. The conduits 227a, 227b have restrictors 221a, 221b disposed therein. The restrictors 221a, 221b control the flow of the process gas through the conduits 227a, 227b. The restrictors 221a, 221b can additionally measure the flow of the process gas through the conduits 227a, 227b. The restrictors 221a, 221b control the flow of the process gas flowing out of the gas panel 208 and balance the process gas flow so that the process gas flow is the same in the two conduits 227a, 227b. The restrictors 221a, 221b can be, for example, valves, mass flow controllers or other flow limiting devices. Flow restrictors 221a, 221b may be used to supplement or replace a precision flow controller (not shown) coupled to conduit 223. Gases that may be supplied by gas panel 208 include process gases, such as purge gases, cleaning gases, and / or deposition gases. Deposition gases may include, for example, one or more reactive gases carried in one or more carrier gases.

[0048] The first and second chamber sides 201a, 201b further include a first individual gas panel 215 and a second individual gas panel 217. The first individual gas panel 215 provides a process gas to the first processing space 224 through the first gas injection channel 282a. The second individual gas panel 217 provides a process gas to the second processing space 226 through the second gas injection channel 282b. If the restrictors 221a, 221b cannot properly balance the process gas flow from the common gas panel 208, or if supplementary gas is used for a particular process, the first and second individual gas panels 215, 217 are used. Gases that can be supplied by the first and second individual gas panels 215, 217 include deposition gases. In one or more embodiments, the common gas panel 208 and the first and second individual gas panels 215, 217 are all utilized. In one or more embodiments, the common gas panel 208 is used and the first and second individual gas panels 215, 217 are omitted. In one or more embodiments, the first and second individual gas panels 215, 217 are used. In embodiments where at least some process gases are supplied by a common gas panel 208, the cost of the gas injection system may be reduced.

[0049] The first chamber side 201a is in fluid communication with the gas panel 208 via the first gas injection channel 282a. The first gas injection channel 282a is in fluid communication with the first processing space 224 such that the first gas injection channel 282a provides processing gas from the gas panel 208 to the first processing space 224.

[0050] In operation, the process gas supplied from the gas panel 208 is introduced into the first processing space 224 through the first gas injection channel 282a formed in the side wall of the chamber body 230, so that the gas panel 208 is a process gas panel. The first gas injection channel 282a is configured to guide the process gas toward the first pedestal assembly 250 in a generally radially inward direction. Therefore, in one or more embodiments, the first gas injection channel 282a can be a cross-flow gas injector. The cross-flow gas injector is positioned to guide the process gas across the front surface of each first substrate 255, the rear surface of each first substrate 255, and / or one or more supporting surfaces of the first pedestal 254a positioned in the first processing space 224. During the film formation process, the one or more supporting surfaces of the first pedestal 254a are located at a processing position, adjacent to the first gas injection channel 282a and at approximately the same height, which can facilitate the process gas to flow generally along the flow path 295 through the front and rear surfaces of the first substrate 255 and / or through the one or more supporting surfaces of the first pedestal 254a. The process gas exits the first process space 224 through the first exhaust port 272a, which is located on a side of the first process space 224 opposite the first gas injection channel 282a. The removal of the process gas through the first exhaust port 272a may be facilitated by a vacuum pump 210.

[0051] The gas panel 208 is in fluid communication with the second gas injection passage 282 b . The second gas injection passage 282 b is in fluid communication with the second processing space 226 , such that the second gas injection passage 282 b provides processing gas from the gas panel 208 to the second processing space 226 .

[0052] The process gas supplied from the gas panel 208 is introduced into the second processing space 226 through the second gas injection channel 282b formed in the side wall of the chamber body 230. The second gas injection channel 282b is configured to guide the process gas in a direction generally radially inward. Therefore, in one or more embodiments, the second gas injection channel 282b can be a cross-flow gas injector. The cross-flow gas injector is positioned to guide the process gas across the front surface of each second substrate 259, the rear surface of each second substrate 259, and / or one or more supporting surfaces of the second pedestal 254b positioned in the second processing space 226. During the film formation process, one or more supporting surfaces of the second pedestal 254b are located at a processing position, adjacent to the second gas injection channel 282b and at approximately the same height, which can facilitate the process gas to flow generally along the flow path 295 through the front and rear surfaces of the second substrate 259 and / or through one or more supporting surfaces of the second pedestal 254b. The process gas exits the second processing space 226 through the second exhaust port 272b, which is located on a side of the second processing space 226 opposite the second gas injection channel 282b. The removal of the process gas through the second exhaust port 272b may be facilitated by a vacuum pump 210.

[0053] The purge gas supplied from the purge gas source 285 is introduced into the bottom area 205 of the first and second process spaces 224 and 226 through first and second purge gas inlets 284 a and 284 b formed in the sidewall of the chamber body 230 .

[0054] The purge gas source 285 is in fluid communication with the conduit 225. The conduit 225 transmits the purge gas from the purge gas source 285. The conduit 225 is divided into two other conduits 229a, 229b. The conduits 229a, 229b connect the conduit 225 to the first and second purge gas inlets 284a, 284b. The purge gas source 285 is in fluid communication with the first and second purge gas inlets 284a, 284b through the conduit 225 and the conduits 229a, 229b. The first purge gas inlet 284a is in fluid communication with the conduit 229a, and the second purge gas inlet 284b is in fluid communication with the conduit 229b. The first and second purge gas restrictors 219a, 219b are used to balance the purge gas flow through the conduits 229a, 229b. The first purge gas restrictor 219a and the second purge gas restrictor 219b balance the flow so that the flow through each conduit 229a, 229b is the same.

[0055] The first purge gas inlet 284a is disposed at a height below the first gas injection channel 282a. If a liner 220 is used, a portion of the liner 220 may be disposed between the first gas injection channel 282a and the first purge gas inlet 284a. In either case, the first purge gas inlet 284a is configured to guide the purge gas in a generally radially inward direction. The first purge gas inlet 284a may be configured to guide the purge gas in an upward direction. During the film formation process, the first pedestal assembly 250 is located in a position that can promote the purge gas to flow generally along the flow path 296 through the back of the first pedestal 254a. The purge gas leaves the bottom region 205 and exits the processing chamber through the first exhaust port 272a, which is located on the side of the first processing space 224 opposite to the first purge gas inlet 284a.

[0056] The second purge gas inlet 284b is disposed at a height below the second gas injection channel 282b. If a liner 220 is used, a portion of the liner 220 may be disposed between the second gas injection channel 282b and the second purge gas inlet 284b. In either case, the second purge gas inlet 284b is configured to guide the purge gas in a substantially radially inward direction. The second purge gas inlet 284b may be configured to guide the purge gas in an upward direction. During the film formation process, the second pedestal assembly 252 is located at a position that can facilitate the purge gas to flow generally along the flow path 296 through the back of the second pedestal 254b. The purge gas leaves the bottom region 205 and is discharged from the processing chamber through the second exhaust port 272b, which is located on the side of the second processing space 226 opposite to the second purge gas inlet 284b.

[0057] The pump 210 (e.g., a vacuum pump) is in fluid communication with the exhaust chamber 270 so that the processing spaces 224, 226 can be evacuated through the plurality of exhaust ports 272a, 272b and the exhaust chamber 270. The exhaust chamber 270 is coupled to a common exhaust conduit 271 shared by the first processing space 224 and the second processing space 226. The common exhaust conduit 271 is connected to a second common exhaust conduit 228, which extends through the chamber body bottom 234 to a common pump conduit 274. The common pump conduit 274 is coupled to the pump 210 to facilitate pumping gas from the common exhaust conduit 271. A common exhaust valve 273 is disposed on the pump conduit 274 between the common exhaust conduit 271 and the pump 210. The common exhaust valve 273 can be opened or closed according to a desired pumping operation. The common exhaust valve 273 can be a pressure control valve.

[0058] Each base assembly 250, 252 includes a corresponding first support frame 298 and a corresponding second support frame 299 disposed at least partially around the first support frame 298. The second support frame 299 includes an arm coupled to the corresponding base 254a, 254b and / or the corresponding cassette 257, 261, such that raising and lowering the second support frame 299 raises and lowers the corresponding base 254a, 254b and / or the corresponding cassette 257, 261. A plurality of lift pins 289 are suspended from each base 254a, 254b. Lowering of the corresponding base 254a, 254b initiates contact of the lift pins 289 with the arms of the corresponding first support frame 298. Continued lowering of the corresponding base 254a, 254b causes the lift pins 289 to contact the substrate in the corresponding cassette 257, 261, causing the lift pins 289 to raise the substrate in the corresponding cassette 257, 261. The bottom area 205 of the chamber side 201a, 201b is defined between the chamber body bottom 234 and the first and second bases 254a, 254b. The rod 256 of each support frame 298, 299 extends through the bottom 234 of the chamber body 230. The rod 256 is coupled to a corresponding motor 264, which is configured to independently raise, lower and / or rotate each of the first and second bases 254a, 254b. The present disclosure contemplates that each motor 264 can be driven by a common power source so that the first and second bases 254a, 254b move simultaneously and in the same manner. The present disclosure contemplates that the rod 256 can be coupled to a common motor 264 so that the first and second bases 254a, 254b move simultaneously and in the same manner.

[0059] The base bellows port 260 is formed in the bottom 234 of the chamber body 230. The base bellows port 260 extends through the bottom 234 of the chamber body 230. Each base bellows port 260 has a diameter greater than the diameter of the rod 256 and circumscribes each rod 256 at a location where the rod 256 extends through the bottom 234 of the chamber body 230. The base bellows port 260 circumferentially surrounds the rod 256. A bellows assembly 258 is disposed around each base bellows port 260 to help reduce or eliminate vacuum leaks outside the chamber body 230. Each bellows assembly 258 surrounds and surrounds a portion of the rod 256 disposed outside the chamber body 230. The bellows assembly 258 is coupled between the outer surface of the bottom 234 of the chamber body 230 and the base member 280. The base member 280 may house the motor 264 and a portion of the rod 256 coupled to the motor 264. The bellows assembly 258 may be formed of a metal or metallized material and may be configured to form an airflow channel 262. The airflow channel 262 is defined as the area between the outer rod 256 and the bellows assembly 258. The airflow channel 262 extends from the base bellows port 260 to the base member 280. In this way, the airflow channel 262 forms a hollow cylindrical channel between the bellows assembly 258 and the rod 256. The airflow channel 262 is fluidly coupled between the bottom region 205 and the exhaust conduit 278. The exhaust conduit 278 extends from the airflow channel 262 through the base member 280 to the pump conduit 274. A valve 279 is disposed on the exhaust conduit 278 between the airflow channel 262 and the pump conduit 274. When the valve 279 is closed, pumping through the exhaust chamber 270 may be performed, and when the valve 279 is opened, pumping through the base bellows port 260 may be performed. When valve 279 is open, common exhaust valve 273 may be closed to enhance pumping of bottom region 205 via base bellows port 260 .

[0060] In one or more embodiments of the pumping process, the bottom region 205 of each chamber side 201a, 201b is pumped via the pedestal bellows port 260. Gases and particles present in the bottom region 205 travel through the pedestal bellows port 260, the gas flow channel 262, and the exhaust conduit 278 to the vacuum pump 210. In this embodiment, the common exhaust valve 273 is closed, and the valve 279 is open, so that the pump 210 is in fluid communication with the bottom region 205. The pumping via the pedestal bellows port 260 is performed during the chamber cleaning process, such as when the chamber is idle and not processing substrates. In the pedestal bellows pumping process, an inert gas can also be provided to the chamber sides 201a, 201b. For example, for each chamber side 201a, 201b, argon gas is provided to both chamber sides 201a, 201b from one of the gas panels 208 or the purge gas source 285. It is believed that the argon gas provided via the gas panel 208 or the purge gas source 285 can more effectively clean and pump the bottom region 205.

[0061] In one or more embodiments, a gas source 268 is fluidly coupled to each bottom region 205 via the gas flow channel 262 and the base bellows port 260. The gas source 268 can be configured to deliver an inert gas or a cleaning gas to the bottom region 205. Although schematically shown as being physically very close to the processing device 200, the gas source 268 is typically a remote gas source away from the processing device 200. The gas source 268 is coupled to a conduit 276 that extends from the gas source 268 through the base member 280. The conduit 276 is in fluid communication with the gas flow channel 262. A valve 277 is disposed on the conduit 276 between the gas source 268 and the base member 280.

[0062] In one or more embodiments, an inert gas or purge gas is provided to the bottom region 205. In operation, the purge gas is provided to the bottom region 205 along a flow path from a gas source 268 through a conduit 276 with a valve 277 in an open state, a gas flow channel 262, and a pedestal bellows port 260. During substrate processing in the chamber sides 201a, 201b, the purge gas is provided from the gas source 268. Suitable purge gases include inert gases such as helium, neon, and argon. However, other non-reactive gases may also be used. It is believed that flowing the purge gas during processing of the substrate prevents particles and contaminants from falling below the support surface 254 and depositing on the surface of the chamber sides 201a, 201b defining the bottom region 205. During purging via the pedestal bellows port 260, pumping of the chamber sides 201a, 201b is performed via the exhaust chamber 270 and the vacuum pump 210. The plurality of exhaust ports 272 and at least a portion of the exhaust chamber 270 are substantially coplanar with the support surface 254. The purge gas is drawn from the bottom region 205 via pumping of the exhaust chamber 270. In such an embodiment, the purge gas and contaminants are exhausted from the chamber sides 201a, 201b without the contaminants falling below the support surface 254. However, it is contemplated that the pumping and purging through the bellows assembly 258 may be omitted. In such an example, the corresponding hardware for pumping and purging through the bellows assembly 258 may also be omitted.

[0063] The processing apparatus 200 also includes an equilibration port 240 disposed through a central wall 232 of the processing apparatus 200. The central wall 232 separates the chamber sides 201a, 201b and defines at least a portion of the bottom region 205. The equilibration port 240 includes a first opening 240a in fluid communication with the bottom region 205 of the first chamber side 201a. The equilibration port 240 also includes a second opening 240b in fluid communication with the bottom region 205 of the second chamber side 201b. Each of the first opening 240a and the second opening 240b is disposed on opposite sides of the equilibration port 240 and is in fluid communication with each other. The equilibration port 240 may be formed in the central wall 232 or through a region of the chamber body 230 that defines the bottom region 205. The equilibration port 240 is disposed below one or more support surfaces of the first pedestal 254a, below one or more support surfaces of the second pedestal 254b, and below the exhaust chamber 270. The balancing port 240 extends from the bottom region 205 of each chamber side 201a, 201b through the central wall 232 and places the bottom region 205 of each chamber side 201a, 201b in fluid communication with each other.

[0064] A conduit 244 extends from the balancing port 240 through the central wall 232 and exits the bottom 234 of the chamber body 230 at the outlet 242. The conduit 244 fluidically couples the balancing port 240 with the exhaust conduit 278. A valve 243 is disposed on the conduit 244 between the outlet 242 and the exhaust conduit 278. When the valve 243 is open, the bottom region 205 is in fluid communication with the vacuum pump 210. In one or more embodiments, the bottom region 205 is exhausted by a balancing port pumping process. The balancing port pumping process is performed when the chamber sides 201a, 201b are idle (e.g., during an idle cleaning process). To enable pumping via the balancing port 240, the exhaust valve 273 is closed and the valve 243 is opened. In this way, the vacuum pump 210 is in fluid communication with the bottom region 205 via the conduit 244 and the balancing port 240. Since the exhaust valve 273 is closed, exhaust of the chamber sides 201a, 201b is performed via the balancing port 240 instead of via the exhaust chamber 270. During the equalization port pumping process, the vacuum pump 210 exhausts gases and contaminants from the bottom region 205 through the equalization port 240 and the conduit 244. During the pumping process of the equalization port 240, an inert gas may also be provided to the chamber sides 201a, 201b. For example, argon gas is provided from the gas panel 208 to both chamber sides 201a, 201b. It is believed that the argon gas provided via the gas panel 208 helps to clean and pump the bottom region 205 more efficiently. Pumping via the equalization port 240 removes unwanted contaminants from the bottom region 205 without utilizing the exhaust chamber 270, which increases the functionality of the processing apparatus 200.

[0065] The equalization ports 240 additionally help equalize the pressure between each chamber side 201a, 201b during substrate processing.Equalizing the pressure within the chamber sides 201a, 201b results in more consistent deposition results between processed substrates within each chamber side 201a, 201b.

[0066] In one or more embodiments, a gas source 248 is fluidly coupled to the bottom region 205 via a conduit 244 and an equalization port 240. The gas source 248 may be configured to deliver an inert gas or a cleaning gas to the bottom region 205. Although schematically shown as being physically very close to the processing device 200, the gas source 248 is typically a remote gas source away from the processing device 200. The gas source 248 is coupled to a conduit 246 that extends from the gas source 248 to the conduit 244. A valve 245 is disposed on the conduit 246 between the gas source 248 and the conduit 244. In one or more embodiments, an inert gas or a purge gas is provided to the bottom region 205. In operation, the purge gas is provided to the bottom region 205 along a flow path from the gas source 248 through the conduit 246, which opens the valve 245, the conduit 244, and the equalization port 240. During an idle cleaning process, the purge gas is provided from the gas source 248. Suitable purge gases include inert gases such as helium, neon, and argon. However, other non-reactive gases may also be used.

[0067] An opening 236 is formed through one or more side walls of each of the first and second chamber sides 201a, 201b (see Figure 6 ). The openings 236 can be used to transfer substrates 255, 259 to or from the boxes 257, 261, such as into and out of the first and second processing volumes 224, 226. In one or more embodiments, each opening 236 includes a slit valve. In one or more embodiments, the openings 236 can be connected to any suitable valve that allows a substrate to pass therethrough.

[0068] Each of the first and second chamber sides 201a, 201b of the dual chamber may include one or more temperature sensors 291, 292 (e.g., optical pyrometers) that measure the temperature within the first and second chamber sides 201a, 201b (e.g., on the surface of the upper window 216a, 216b, one or more surfaces of the substrate 255, 259 and / or the box 257, 261). The one or more temperature sensors 291, 292 are disposed on the first cover 204a and the second cover 204b.

[0069] exist Figure 2In the illustrated embodiment, one or more heat shields 2010 are disposed around the box 257 and the first substrate 255, and around the second box 261 and the second substrate 259. Each of the one or more heat shields 2010 is formed of one or more of silicon carbide (SiC), quartz, and / or graphite coated with silicon carbide (SiC). The one or more heat shields 2010 include a plurality of inlet openings 2011 fluidly connected to the gas injection channels 282a, 282b and a plurality of outlet openings 2012 fluidly connected to the exhaust ports 272a, 272b. Each inlet opening 2011 and each outlet opening 2012 are horizontally aligned with an opening (e.g., one of the upper opening 267 and the lower opening 269) above, below, and / or between the substrates 255, 259. The inlet opening 2011 is fluidly connected to the first and second gas injection channels 282a, 282b through a plurality of inlet lines 2021a, 2021b. The outlet opening 2012 is in fluid communication with the exhaust ports 272a, 272 through a plurality of outlet lines 2022a, 2022b. The process gas flows from the gas injection channels 282a, 282b through the inlet lines 2021a, 2021b, through the inlet opening 2011, and to the substrates 255, 259. After the process gas flows over the front and back surfaces of the substrates 255, 259, the process gas flows through the outlet opening 2012, through the outlet lines 2022a, 2022b, and to the exhaust ports 272a, 272b. Gas, such as a purge gas, may flow through one or more channels 2031 below the gas inlet 2011 and the gas outlet 2012. The one or more channels 2031 are in fluid communication with the gas injection channels 282a, 282b and / or 284a, 284b through one or more purge inlet lines 2023. One or more channels 2031 are in fluid communication with the exhaust ports 272a, 272b via one or more purge outlet lines 2024. Figure 2 In the illustrated embodiment, one or more thermal shields 2010 are disposed in the first processing volume 224 , and one or more thermal shields 2010 are disposed in the second processing volume 226 .

[0070] Figure 3 is a schematic top plan view of a chamber body 390 according to one embodiment, which chamber body can be used as Figure 2 The chamber body 230 is shown. The chamber body 390 includes two body portions 415a, 415b, two interface surfaces 308, two inlet portions 310, an upper ring assembly 320, a lower ring assembly 318, and a first exhaust port 272a and a second exhaust port 272b. The chamber body 390 surrounds the first and second processing volumes 224, 226 of the first and second chamber sides 101a, 101b.

[0071] The first chamber side 201a and the second chamber side 201b (eg Figure 2 Each of the two chamber bodies 390 (shown in Figure 20) forms a first half 326 and a second half 328 of the chamber body 390. The first half 326 of the chamber body 390 defines a first body portion 415a. The second half 328 of the chamber body 390 defines a second body portion 415b. The first half 326 and the second half 328 of the chamber body 390 are disposed on opposite sides of the reference plane 203. The reference plane 203 (extending along the chamber height) bisects the chamber body 390 such that the first half 326 of the chamber body 390 is a mirror image of the second half 328 of the chamber body 390.

[0072] The upper ring assembly 320 is the upper part of the chamber body 390. The upper ring assembly 320 at least partially surrounds the first processing space 224 and the second processing space 226. The upper ring assembly 320 can be a continuous body with a single piece, or it can be a plurality of parts fastened together. In one or more embodiments where the upper ring assembly 320 is a continuous body, the upper ring assembly 320 is described as a monolithic upper assembly. The use of a monolithic assembly for the upper ring assembly 320 helps to ensure that each of the first chamber side 201a and the second chamber side 201b is set in the same vertical position at a given time point. The use of the monolithic upper ring assembly 320 can also facilitate the balance port 240 to make the first processing space 224 and the second processing space 226 fluidly connected to each other without having to manage the potential misalignment or sealing damage between the first body part 415a and the second body part 415b. The upper ring assembly 320 includes an inlet portion 310, a gas channel 312, a first cavity 335, a second cavity 340, a first cavity wall 302 and a second cavity wall 303. The first cavity wall 302 of the first cavity 335 is the outer wall of the first cavity 335. The second cavity wall 303 of the second cavity 340 is the outer wall of the second cavity 340.

[0073] Each of the first half 326 and the second half 328 includes an interface surface 308. The interface surface 308 includes an opening 236 for transferring substrates 255, 259 into and out of the first and second chamber sides 201a, 201b. The interface surface 308 can be connected to another set of processing chambers, a factory interface, or a transfer chamber (e.g., Figure 1 The transfer chamber 108 is shown. The interface surface 308 is a flanged surface provided from the first chamber side 201a and the second chamber side 201b.

[0074] Each of the first half 326 and the second half 328 also includes an inlet portion 310. The inlet portion 310 is a portion of the upper ring assembly 320. The inlet portion 310 is a portion of the upper ring assembly 320 in which the gas passage 312 is formed. The inlet portion 310 may be a continuous portion of the upper ring assembly 320, or may be separate from the upper ring assembly 320. The inlet portion 310 extends outward from a sidewall 325 of the upper ring assembly 320. The sidewall 325 is a portion of an outer surface 330 of the upper ring assembly 320.

[0075] The gas channel 312 is in fluid communication with the gas panel 208 and the purge gas source 285. The gas channel 312 may be a plurality of separate gas channels 312. Each of the plurality of gas channels 312 is used to allow one or more process gases to flow into the first processing space 224 and the second processing space 226 through the first injection channel 282a and the second injection channel 282b. In one or more embodiments, the gas channel 312 is formed in (e.g., passes through) the inlet portion 310 of the first and second body portions 415a, 415b. For each chamber side 201a, 201b, the gas channel 312 may include a plurality of gas channels 312, such as four or more gas channels 312, five or more gas channels 312, six or more gas channels 312, eight or more gas channels 312, 10 or more gas channels 312, or 12 or more gas channels 312.

[0076] The lower ring assembly 318 is disposed below the upper ring assembly 320. The lower ring assembly 318 is the lower portion of the chamber body 230 (eg, Figure 2). The lower ring assembly 318 at least partially surrounds the first processing space 224 and the second processing space 226. The lower ring assembly 318 can be a continuous body with a single piece, or can be a plurality of parts fastened together. In an embodiment where the lower ring assembly 318 is a continuous body, the lower ring assembly 318 can be described as an integral lower ring assembly. The use of an integral lower ring assembly for the lower ring assembly 318 helps to ensure that each of the first chamber side 101a and the second chamber side 101b is disposed in the same vertical position. The use of the integral lower ring assembly 318 can also facilitate ensuring that the balance port 240 fluidically connects the first processing space 224 and the second processing space 226 to each other without having to manage potential misalignment or sealing damage between the first chamber side 201a and the second chamber side 201b. The lower ring assembly 318 includes first and second exhaust ports 272a, 272b, a first chamber 335, a second chamber 340, a first chamber wall 302, and a second chamber wall 303. The first chamber wall 302 of the first chamber 335 is the outer wall of the first chamber 335. The second cavity wall 303 of the second cavity 340 is an outer wall of the second cavity 340. The balancing port 240 is disposed between each of the first cavity side 201a and the second cavity side 201b through the lower ring assembly 318. Alternatively, the balancing port 240 is disposed through the upper ring assembly 320.

[0077] The first exhaust port 272a and the second exhaust port 272b may be disposed on a side of the chamber body 230 opposite to the first injection channel 282a and the second injection channel 282b (e.g., about 180 degrees from the first injection channel 282a and the second injection channel 282b) to promote a cross-flow pattern. The first exhaust port 272a and the second exhaust port 272b may be formed in the lower ring assembly 318, so that the first exhaust port 272a and the second exhaust port 272b are disposed vertically below the first gas injection channel 282a and the second gas injection channel 282b. The first exhaust port 272a is disposed opposite to the first injection channel 282a, and the second exhaust port 272b is disposed opposite to the second injection channel 282b. The positioning of the first exhaust port 272a allows the gas from the first injection channel 282a to flow horizontally within the first processing space 224. The positioning of the second exhaust port 272b allows the gas from the second injection channel 282b to flow horizontally within the second processing space 226. The first exhaust port 272 a and the second exhaust port 272 b extend from the first chamber wall 302 and the second chamber wall 303 to the outer surface 345 of the lower ring assembly 318 .

[0078] A support groove 304 is provided in each of the first body portion 415a and the second body portion 415b, adjacent to the first cavity wall 302 and the second cavity wall 303. The support groove 304 is a lip extending around the diameter of the first cavity wall 302 and the second cavity wall 303. The support groove 304 can be shaped to receive and support the edges of the first and second upper windows 216a, 216b (such as Figure 2 ). The support groove 304 may be a groove that is vertically offset from and lower than the rest of the top surface 306 of the upper ring assembly 320.

[0079] In one or more embodiments, the chamber body 390 is divided into a first side 322 and a second side 324 such that the first body portion 415a is the first side 322 of the chamber body 390 and the second body portion 415b is the second side 324 of the chamber body 390. The first side 322 and the second side 324 are on opposite sides of the second reference plane 207. The second reference plane 207 is the longitudinal axis of the chamber body 390. The second reference plane 207 is perpendicular to the reference plane 203 and also extends along the chamber height. The second reference plane 207 divides the chamber body 390 such that the first side 322 of the chamber body 390 is on one side of the second reference plane 207 and the second side 324 of the chamber body 390 is on the opposite side of the second reference plane 207 from the first side 322. In one or more embodiments, the interface surface 308, the inlet portion 310, and the gas channel 312 are all in the first side 322, while the first exhaust port 272a and the second exhaust port 272b are in the second side 324. In one or more embodiments, the interface surface 308 is in a first side, and the inlet portion 310 , the gas passage 312 , and the first and second exhaust ports 272 a , 272 b are split between the first and second sides 322 , 324 .

[0080] The first cavity 335 and the second cavity 340 are separated by a minimum distance 381. The minimum distance 381 is the minimum distance between the first cavity wall 302 and the second cavity wall 303. The minimum distance can be the minimum width of the center wall 232. The minimum distance 381 varies so that the thickness of the center wall 232 can vary. In an embodiment where the first upper window 216a and the second upper window 216b are separated, the minimum distance 381 is greater than zero millimeters, for example, greater than one millimeter thick. In an embodiment where the first upper window 216a and the second upper window 216b are separated by a single upper window 916 (see Fig. 9), the minimum distance 381 may be negligible such that the minimum distance 381 is zero millimeters thick and the center wall 232 has an opening formed through the center wall 232. In such an embodiment, the balancing opening 240 may not be formed through the center wall 232. In one or more embodiments, when the minimum distance 381 is reduced to zero millimeters and the minimum width of the center wall 232 is zero millimeters, the first cavity 335 and the second cavity 340 are still separated by the air curtain and / or a portion of the liner 220 disposed between the first cavity 335 and the second cavity 340.

[0081] Figure 4 According to one embodiment Figure 3 A schematic side cross-sectional view of a portion of chamber body 390 is shown. Figure 4 The portion of chamber body 390 shown is second half 328 of chamber body 390. First half 326 is similar to second half 328. Second purge gas inlet 284b, second gas injection channel 282b, support groove 304, and opening 236 of second chamber side 201b may also represent first purge gas inlet 284a, first gas injection 282a, support groove 304, and opening 236 of first side and first chamber side 201a. Chamber body 390 includes upper ring assembly 320 and lower ring assembly 318.

[0082] Figure 4 The relationship between the first and second gas injection channels 282a, 282b, the first and second purge gas inlets 284a, 284b and the opening 236 is shown. The first and second gas injection channels 282a, 282b and the first and second purge gas inlets 284a, 284b are disposed in the upper ring assembly 320. The first and second gas injection channels 282a, 282b are disposed above the first and second purge gas inlets 284a, 284b. In one or more embodiments, each of the first and second gas injection channels 282a, 282b may have at least 4 gas injection channels, for example, each of the first and second gas injection channels 282a, 282b may have 4-12 or more gas injection channels. In one or more embodiments, each of the first and second purge gas inlets 284a, 284b may have at least 4 purge gas inlets, for example, there are 4-12 or more first and second purge gas inlets 284a, 284b. Each of the first and second gas injection channels 282a, 282b and each of the first and second purge gas inlets 284a, 284b are parallel to each other. The first and second gas injection channels 282a, 282b and the first and second purge gas inlets 284a, 284b are spaced apart along the inner walls of the first and second chamber sides 201a, 201b.

[0083] The opening 236 is below the second gas injection channel 282b and the second purge gas inlet 284b. Figure 2 As described, the size and position of the opening 236 are configured to allow the substrate to pass therethrough. The opening 236 can be closed using a valve. In one or more embodiments, the opening 236 is disposed directly below the second gas injection channel 282b and the second purge gas inlet 284b. Alternatively, the opening 236 can be disposed adjacent to the second gas injection channel 282b and the second purge gas inlet 284b but offset at an angle. Figures 5B-5D and the accompanying description describe embodiments in which the opening 236 will be in an alternative position, which replaces Figure 4 The support groove 304 is above the second gas injection channel 282b and the second purge gas inlet 284b. Figure 5A As shown, the first exhaust port 272a and the second exhaust port 272b are arranged opposite to the first gas injection channel 282a and the second gas injection channel 282b. The first exhaust port 272a and the second exhaust port 272b include a plurality of exhaust ports, such that there are at least two exhaust ports for each of the first exhaust port 272a and the second exhaust port 272b, such as three to five (or more) exhaust ports.

[0084] Figure 5A is a schematic top plan view of a chamber body 430a according to one embodiment, which chamber body 430a can be used as Figure 2 The chamber body 230 is shown in top plan view. The chamber body 430a shows the relationship between the opening 236, the first and second gas injection channels 282a, 282b, and the first and second exhaust ports 272a, 272b. Figure 5A The chamber body 430 a further includes a balancing port 240 .

[0085] The gas injection chord length 404 is the chord length of the gas injection channel from one end of the first gas injection channel 282a or the second gas injection channel 282b to the gas injection channel on the opposite end of the first gas injection channel 282a or the second gas injection channel 282b. The gas injection channel used to define the gas injection chord length 404 is the gas injection channel at the opposite extreme ends of the first gas injection channel 282a and the second gas injection channel 282b. The gas injection chord length 404 as described herein is less than 500 mm, such as less than 450 mm, such as less than 400 mm. The gas injection chord length 404 is greater than 150 mm, such as greater than 200 mm, such as about 300 mm. The gas injection chord length 404 is configured to allow the process gas to flow through the entire front surface and the rear surface of the substrate.

[0086] The exhaust port chord length 406 is the chord length from the exhaust port outer edge at one end of the first exhaust port 272a or the second exhaust port 272b to the exhaust port edge at the opposite end of the first exhaust port 272a or the second exhaust port 272b. The exhaust ports used to define the exhaust port chord length 406 are exhaust ports at opposite extreme ends of the first exhaust port 272a and the second exhaust port 272b. The exhaust port chord length 406 is less than 500 mm, such as less than 450 mm, such as less than 400 mm. The exhaust port chord length 406 is greater than 150 mm, such as greater than 200 mm, such as about 300 mm.

[0087] Gas injection chord length 404 may be similar to exhaust port chord length 406. In some embodiments, gas injection chord length 404 may be less than or equal to exhaust port chord length 406 by less than about 10%, such as less than about 5%, or less than 1%.

[0088] exist Figure 5A In an embodiment, all first and second gas injection channels 282a, 282b, first and second purge gas inlets 284a, 284b, and first and second exhaust ports 272a, 272b are positioned parallel to each other. The opening 236 in the chamber body 430a is in such a position that the substrate 255, 259 moves into and out of the processing space 224, 226 along a direction parallel to all first and second gas injection channels 282a, 282b, first and second purge gas inlets 284a, 284b, and first and second exhaust ports 272a, 272b. The opening 236 of the first body portion 415a is disposed directly below the first gas injection channel 282a. The opening 236 of the second body portion 415b is disposed directly below the second gas injection channel 282b.

[0089] The balancing port 240 is disposed between the first body portion 415a and the second body portion 415b. The balancing port 240 connects the first processing space 224 and the second processing space 226 to each other.

[0090] The process gas flow path 408 of the process gas traverses the first process space 224 and is introduced from the first gas injection channel 282a or the first purge gas inlet 284a ( Figure 2 The process gas flow path 408 also traverses the second process space 226 and flows from the second gas injection channel 282b or the second purge gas inlet 284b ( Figure 2 As shown) travels to the second exhaust port 272b. Figure 5A Although shown as a curve in FIG. 4 , the process gas flow path 408 is preferably a straight line and flows through the substrate within each of the first process volume 224 and the second process volume 226 .

[0091] The first gas injection channel 282a and the second gas injection channel 282b and the first exhaust port 272a and the second exhaust port 272b are each bisected by the first flow path plane 410a. Each of the first flow path planes 410a extends through the first body portion 415a and the second body portion 415b. The first flow path plane 410a is parallel to the flow of the process gas from the first and second gas injection channels 282a, 282b to the first and second exhaust ports 272a, 272b. The first flow path plane 410a is perpendicular to the second reference plane 207 (e.g., perpendicular to the longitudinal axis of the chamber body 430), and thus forms an angle α of 90 degrees between the first flow path plane 410a and the second reference plane 207. However, it is contemplated that the angle α may deviate from 90 degrees, so that the first flow path plane 410a and the second reference plane 207 are not perpendicular to each other. In one or more embodiments, the angle α is about 80 degrees to about 100 degrees, for example, about 85 degrees to about 95 degrees.

[0092] Figure 5A The embodiment shown in FIG. 1 facilitates the use of a common gas panel, such as gas panel 208, and a common exhaust device, such as common exhaust duct 271 and / or second common exhaust duct 228 (see FIG. 1 ). Figure 2 ). Using a common gas panel and a common exhaust helps reduce the cost of the system while facilitating high precision of heating and process gas flow within the first and second process volumes 224, 226. The orientation of the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b facilitates space for a common gas panel and a common exhaust panel.

[0093] Apart from Figure 2In addition to the upper heat sources 206a, 206b and the lower heat sources 238a, 238b shown, one or more side heat sources 418a, 418b, 418c, 418d (e.g., side lights, resistive heaters, LEDs, and / or lasers) are located outside one or more of the first processing volume 224 and / or the second processing volume 226. The one or more side heat sources include one or more first side heat sources 418a located outside the first processing volume 224, one or more second side heat sources 418d located outside the second processing volume 226, and one or more third side heat sources 418b, 418c located between the first processing volume 224 and the second processing volume 226. The side heat sources 418a, 418b, 418c, 418d are configured to heat (e.g., by radiation) the first and second processing volumes 224, 226 through their respective sides. The third side heat sources 418b, 418c are located in the central wall 232. One or more third side heat sources 418b, 418c are opposite to one or more first side heat sources 418a on both sides of the first processing space 224. One or more third side heat sources 418b, 418c are opposite to one or more second side heat sources 418d on both sides of the second processing space 226.

[0094] Each side heat source 418a-418d is horizontally aligned between the first plurality of gas injection channels 282a and the first purge gas inlet 284a (on the first side of the second reference plane 207) and the one or more first exhaust ports 272a (on the second side of the second reference plane 207). Each side heat source 418a-418d is horizontally aligned between the second plurality of gas injection channels 282b and the second purge gas inlet 284b (on the first side of the second reference plane 207) and the one or more second exhaust ports 272b (on the second side of the second reference plane 207). The present disclosure contemplates that the side heat sources 418a-418d (or additional side heat sources used in addition to the side heat sources 418a-418d) may be aligned with (e.g., positioned above) one or more of the first and second gas injection channels 282a, 282b, the first and second exhaust ports 272a, 272b, and / or the first and second purge gas inlets 284a, 284b (e.g., as shown in FIG. 1 ). Figure 5B as shown).

[0095] The side heat sources 418a, 418b, 418c, 418d are arranged (e.g., in a vertical direction) in multiple heat source levels. Figure 6 and 7The side heat sources 418a, 418b, 418c, 418d in the figure show three heat source levels. Each heat source level is arranged to independently heat (e.g., by independently radiating) one of the multiple levels of each box 257, 261. The radiation beam profile of each side heat source 418a, 418b, 418c, 418d within each heat source level can be directed (e.g., directed downward at an angle) toward the base plate 255 and the arc support 263 of the corresponding level of each box 257, 261 (e.g., see Fig.14 and 19 4. The side heat sources 418a, 418b are shown in the figure. For example, if each box 257, 261 includes two levels (or three levels), the side heat sources 418a, 418b, 418c, 418d are arranged in two heat source levels (or three heat source levels if there are three levels) to direct light to the corresponding substrates 255 and arc supports 263 of the two levels of boxes 257, 261. Using one or more controllers (such as controller 190), each heat source level can be independently controlled. For example, the power supply to the side heat sources of each level can be independently controlled so that the substrates supported by each level of boxes 257, 261 can be independently heated (for example, heated to different temperatures during processing).

[0096] Side heat sources 418a-418d and heat shields (e.g., Figure 2 The described one or more thermal shields 2010) facilitate uniform heating of the substrates 255, 259 in batch processing operations to promote uniform epitaxial deposition during batch processing operations, thereby promoting increased throughput and enhanced device performance.

[0097] The present disclosure contemplates various locations for the side heat sources 418a-418d, such as Figures 5A-5E shown.

[0098] Figure 5B is a schematic top plan view of a chamber body 430b according to one embodiment, which chamber body 430b can be used as Figure 2 The chamber body 230 is shown. Figure 5B In the illustrated embodiment, the first and second gas injection channels 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b are positioned parallel to the second reference plane 207. A cross-sectional view of the chamber body 430b illustrates the relationship between the opening 236, the first and second gas injection channels 282a, 282b, and the first and second exhaust ports 272a, 272b. Figure 5B The chamber body 430 b is shown to include a balancing port 240 .

[0099] exist Figure 5BIn the exemplary embodiment of the present invention, all of the first and second gas injection channels 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b are positioned parallel and aligned with each other (e.g., parallel to the longitudinal axis of the chamber body 430). The openings 236 in the first and second body portions 415a, 415b are positioned so that the substrates 255, 259 move into and out of the processing volume 224, 226 in a direction perpendicular to all of the first and second gas injection channels 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b. The openings 236 of the first chamber side 201a are horizontally aligned between the locations of the first gas injection channels 282a and the first exhaust ports 272a. The openings 236 of the second chamber side 201b are aligned between the locations of the second gas injection channels 282b and the second exhaust ports 272b.

[0100] The balancing port 240 is disposed between the first body portion 415a and the second body portion 415b. Figure 5B In the illustrated embodiment, the balancing port 240 is aligned with the first and second gas injection passages 282a, 282b. The balancing port 240 is below the first and second gas injection passages 282a, 282b and connects the first and second processing spaces 224, 226 to each other.

[0101] Figure 5B The gas injection chord length 404 and the exhaust port chord length 406 are Figure 5A The gas injection chord length 404 and the exhaust chord length 406 are defined in the same manner. Figure 5A The process gas flow path 408 is defined in the same manner as Figure 5B The process gas flow path 408. Figure 5B In the embodiment disclosed in FIG. 4 , the process gas flow path 408 diverges from the central wall 232 of the chamber body 430 and moves toward the outer edge of the chamber body 430. The process gas flowing from the first gas injection channel 282a flows to the first exhaust port 272a, and the process gas flowing from the second gas injection channel 282b flows to the second exhaust port 272b.

[0102] like Figure 5A As shown in FIG. 1 , the first and second gas injection channels 282a, 282b and the first and second exhaust ports 272a, 272b are each divided into two by a second flow path plane 410b. The second flow path plane 410b extends through the first body portion 415a and the second body portion 415b and extends along the height of the chamber. Figure 5BIn the illustrated embodiment, the second flow path plane 410b is coplanar or forms a single plane through the chamber body 430. The second flow path plane 410b is parallel to the flow of process gas from the first and second gas injection channels 282a, 282b to the first and second exhaust ports 272a, 272b. Figure 5B In the illustrated embodiment, the second flow path plane 410b is parallel to the second reference plane 207. The second flow path plane 410b forms an angle α with the second reference plane 207. Figure 5B In the illustrated embodiment, the angle α is about 0 degrees. In one or more embodiments, the angle α deviates from 0 degrees and is about -10 degrees to about 10 degrees, such as about -5 degrees to about 5 degrees.

[0103] Figure 5B The embodiment shown in facilitates the use of a common gas panel, such as gas panel 208, and a common exhaust device, such as common exhaust duct 271 and / or second common exhaust duct 228.

[0104] Figure 5C is a schematic top plan view of a chamber body 430c according to one embodiment, which chamber body 430c can be used as Figure 2 The chamber body 230 is shown. Figure 5C In the embodiment shown, Figure 2 The chamber body 230 is Figure 4 4. In the chamber body 430c, the first and second gas injection channels 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b are positioned at an acute angle α relative to the second reference plane 207 (e.g., the longitudinal axis of the chamber body 430). The cross-sectional view of the chamber body 430c shows the relationship between the opening 236, the first and second gas injection channels 282a, 282b, and the first and second exhaust ports 272a, 272b. Figure 5C The chamber body 430c shown also includes a balancing port 240 and includes a plurality of side heat sources 418a-418d.

[0105] exist Figure 5CIn the illustrated embodiment, all first gas injection channels 282a, first purge gas inlets 284a, and first exhaust ports 272a are positioned parallel to and in unison with each other along the third flow path plane 410c. Second gas injection channels 282b, second purge gas inlets 284b, and second exhaust ports 272b are also positioned parallel to and in unison with each other along another third flow path plane 410c. The openings 236 in both the first body portion 415a and the second body portion 415b are at an angle to all first and second gas injection channels 282a, 282b, first and second purge gas inlets 284a, 284b, and first and second exhaust ports 272a, 272b. The openings 236 of the first body portion 415a are adjacent to and partially below the first gas injection channels 282a and the first purge gas inlet 284a. The openings 236 of the second body portion 415b are adjacent to and partially below the second gas injection channels 282b and second exhaust ports 272b. The opening 236 is partially disposed below the second gas injection passage 282 b and the second purge gas inlet 284 b .

[0106] The balancing port 240 is disposed between the first body portion 415a and the second body portion 415b. Figure 5C In the illustrated embodiment, a balancing port 240 connects the first and second processing spaces 224, 226 to each other.

[0107] Figure 5C The gas injection chord length 404 and the exhaust port chord length 406 are Figure 5A and Figure 5B The gas injection chord length 404 and the exhaust chord length 406 are defined in the same manner. Figure 5A , 5B The process gas flow path 408 is defined in the same manner as Figure 5C The process gas flow path 408. Figure 5C In the embodiment shown in , the process gas flow path 408 runs at an angle relative to the reference plane 203 and the second reference plane 207 of the chamber body 430c and moves toward the outer edge of the chamber body 430c. The process gas flowing from the first gas injection channel 282a flows to the first exhaust port 272a, and the process gas flowing from the second gas injection channel 282b flows to the second exhaust port 272b.

[0108] like Figure 5A and 5BAs shown in , the first and second gas injection channels 282a, 282b and the first and second exhaust ports 272a, 272b are each divided into two by a third flow path plane 410c. The third flow path plane 410c extends through the first body portion 415a and the second body portion 415b. Each flow path plane in the third flow path plane 410c is parallel to the flow of the process gas from one of the first or second gas injection channels 282a, 282b to one of the first or second exhaust ports 272a, 272b. Figure 5C In the illustrated embodiment, each third flow path plane 410c is at an acute angle α with the second reference plane 207 when the angle α faces (eg, is oriented) inwardly toward the reference plane 203. The angle α is an angle inwardly of the third flow path plane 410c and closer to the opening 236. Figure 5C In the embodiments shown in the accompanying text, the angle α is about 45 degrees. In one or more embodiments, the angle α is about 10 degrees to about 80 degrees, such as about 20 degrees to about 70 degrees, such as about 30 degrees to about 60 degrees, such as about 35 degrees to about 55 degrees, such as about 40 degrees to about 50 degrees.

[0109] exist Figure 5C In the illustrated embodiment, a common gas panel, such as gas panel 208, can be more easily used to provide process gases to the first and second chamber sides 201a, 201b. The first and second gas injection channels 282a, 282b are close to each other, so shorter gas conduits can be used to move process gases from the gas panel 208 to the first and second gas injection channels 282a, 282b. Having shorter gas conduits saves costs, and without variable conduit lengths and back pressures, pressure can be more evenly distributed between the first and second chamber sides 201a, 201b (allowing for improved gas flow uniformity). A common exhaust device (e.g., common exhaust conduit 271) can be used to exhaust process gases. A common gas panel and a common exhaust device help reduce the difficulty of servicing the heat source head and other chamber components. The present disclosure contemplates the use of separate exhaust systems for the processing spaces 224, 226.

[0110] Figure 5D is a schematic top plan view of a chamber body 430d according to one embodiment, which chamber body 430d can be used as Figure 24. In the chamber body 430d, the first and second gas injection channels 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b are positioned at an obtuse angle α relative to the second reference plane 207 (e.g., at an obtuse angle relative to the longitudinal axis of the chamber body 430). The top plan view of the chamber body 430d shows the relationship between the opening 236, the first and second gas injection channels 282a, 282b, and the first and second exhaust ports 272a, 272b. Figure 5D The chamber body 430d is shown to include a balancing port 240 .

[0111] exist Figure 5D In the illustrated embodiment, all first gas injection channels 282a, first purge gas inlets 284a, and first exhaust ports 272a are positioned parallel and consistent with each other along the fourth flow path plane 410d. The second gas injection channels 282b, second purge gas inlets 284b, and second exhaust ports 272b are also positioned parallel and consistent with each other along another fourth flow path plane 410d. The openings 236 in both the first body portion 415a and the second body portion 415b are at an angle to all first and second gas injection channels 282a, 282b, first and second purge gas inlets 284a, 284b, and first and second exhaust ports 272a, 272b. The openings 236 of the first chamber side 101a are adjacent to the first gas injection channels 282a and the first exhaust ports 272a and are partially disposed below the first gas injection channels 282a and the first exhaust ports 272a. The openings 236 are partially disposed below the first gas injection channels 282a and the first purge gas inlet 284a. The opening 236 of the second chamber side 201b is adjacent to and partially disposed below the second gas injection channel 282b and the second exhaust port 272b. The opening 236 is partially disposed below the second gas injection channel 282b and the second purge gas inlet 284b.

[0112] The balancing port 240 is disposed between the first body portion 415a and the second body portion 415b. Figure 5D In the illustrated embodiment, a balancing port 240 connects the first and second processing spaces 224, 226 to each other.

[0113] Figure 5D The gas injection chord length 404 and the exhaust port chord length 406 are Figures 5A-5C The gas injection chord length 404 and the exhaust chord length 406 are defined in the same manner. Figures 5A-5C The process gas flow path 408 is defined in the same manner as Figure 5D The process gas flow path 408. Figure 5D In the embodiment shown in , the process gas flow path 408 travels at an angle α relative to the reference plane 203 and the second reference plane 207 of the chamber body 430d and moves toward the central wall 232 of the chamber body 430d. The process gas flowing from the first gas injection channel 282a flows to the first exhaust port 272a, and the process gas flowing from the second gas injection channel 282b flows to the second exhaust port 272b.

[0114] like Figures 5A-5C As shown in , the first and second gas injection channels 282a, 282b and the first and second exhaust ports 272a, 272b are each divided into two by a fourth flow path plane 410d. The fourth flow path plane 410d extends through each of the first body portion 415a and the second body portion 415b. The fourth flow path plane 410d is parallel to the flow of the process gas from the first and second gas injection channels 282a, 282b to the first and second exhaust ports 272a, 272b. Figure 5D In the illustrated embodiment, the fourth flow path plane 410d is at an obtuse angle α with the second reference plane 207 when this angle is taken as an inward angle toward the reference plane 203. Angle α is an angle inward of the second flow path plane 410b and closer to the opening 236. Figure 5D In the embodiment shown, angle α is about 135 degrees. In one or more embodiments, angle α is about 100 degrees to about 170 degrees, such as about 110 degrees to about 160 degrees, such as about 120 degrees to about 150 degrees, such as about 125 degrees to about 145 degrees, such as about 130 degrees to about 140 degrees.

[0115] exist Figure 5D In the illustrated embodiment, a common exhaust conduit 271 can be used to more easily remove process gases from the first and second chamber sides 201a, 201b. The first exhaust port 272a and the second exhaust port 272b are close to each other, so a shorter gas conduit is used to transfer exhaust from the first processing space 224 and the second processing space 226 to the vacuum pump 210. In an embodiment where the chamber body 430d is a monolithic body, the first exhaust port 272a and the second exhaust port 272b can be combined into a single exhaust device. A shorter gas conduit and a single exhaust device can reduce chamber costs. The use of a single vacuum pump 210 further saves equipment costs. The use of a common exhaust conduit 271 simplifies the maintenance of the exhaust device, which reduces the total downtime of the processing chamber when cleaning the exhaust system.

[0116] exist Figure 5C and 5DIn the illustrated embodiment, the side heat sources 418a-418d are at least partially horizontally offset from the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b.

[0117] Figure 5E According to one embodiment Figure 2 Schematic top plan view of chamber body 230 is shown. Chamber body 230 is similar to Figure 5B The chamber body 430b shown in FIG. 4 is illustrative and includes one or more of its aspects, features, components, operations and / or characteristics.

[0118] exist Figure 5E In the embodiment shown, relative to Figure 5B As shown, one side of the first gas injection channel 282a and the first purge gas inlet 284a is interchanged with one side of the first exhaust port 272a. Figure 5E In the embodiment shown, relative to Figure 5B As shown, one side of the second gas injection passage 282b and the second purge gas inlet 284b is interchanged with one side of the second exhaust port 272b.

[0119] Figure 6 is a schematic side cross-sectional view of a processing device 600 according to one embodiment. Figure 6 The cross-sectional view shown in FIG. Figure 5A The device 600 is similar to the section 6-6 shown in FIG. Figure 2 The processing device 200 shown in FIG. 1 is illustrative and includes one or more of its aspects, features, components, operations and / or characteristics.

[0120] The present disclosure contemplates that the pads 220 may each include (or be at least partially replaced by) a transparent window that allows radiant energy from the side heat sources 418a-418d to pass therethrough and to one or more thermal shields (e.g., Figure 2 One or more thermal shields 2010 ) and / or first and second substrates 255 , 259 as described.

[0121] Each of the side heat sources 418a-418d is located at a height (e.g., Figure 6 Each side heat source 418a-418d is located at a height vertically aligned between one or more second upper heat sources 206b and one or more second lower heat sources 238b. In one or more embodiments, the height is relative to the bottom 234.

[0122] The present disclosure contemplates that one or more side heat sources 418a, 418b, 418c, 418d may be disposed in respective annular rings at least partially surrounding each of the first and second cassettes 257, 261. Each annular ring may fully or partially surround a respective cassette 257, 261. In embodiments where heat shields are used in respective processing volumes 224, 226, annular rings may be disposed to fully or partially surround respective heat shields.

[0123] One or more side sensors 281 (e.g., one or more pyrometers) may be used to measure the temperature within the first and second processing volumes 224, 226 from respective sides of the first and second processing volumes 224, 226. Side sensors 281. The side sensors 281 are arranged in a plurality of sensor levels ( Figure 6 2 sensor levels are shown). In one or more embodiments, the number of sensor levels is equal to the number of levels of the boxes 257, 261. Each sensor level corresponds to a corresponding level of the boxes 257, 261, such that one or more side sensors of each sensor level are configured to measure the temperature of the corresponding level (e.g., the temperature of the support and / or substrate of the corresponding level). Each side sensor 281 can be directed (e.g., oriented downward at an angle) toward the substrate 255 and the curved support 263 of the corresponding level of each box 257, 261 (see, e.g., Fig.14 and 19 Side sensor 281 shown in ).

[0124] Figure 7 is a schematic side cross-sectional view of a processing device 700 according to one embodiment. The device 700 is similar to Figure 6 The processing device 600 shown in FIG. 6 is illustrative and includes one or more of its aspects, features, components, operations and / or characteristics.

[0125] exist Figure 7 In the illustrated embodiment, the second chamber side 101b is omitted. The central wall 232 may be identical to the chamber body 230. The wall 232 ( Figure 7 The sidewalls in the first processing volume 224 may be integrated into a single sidewall with the chamber body 230. The present disclosure contemplates that one or more thermal shields 2010 may be disposed in the first processing volume 224. Figure 8 The operations of a method 800 for batch processing a plurality of substrates according to one embodiment are illustrated. The method 800 uses a common gas panel, one or more common exhaust ducts, and / or a common exhaust chamber. The method 800 may use Figure 1-7 Any one of the devices, aspects, features, components, characteristics and / or operations described in one or more of the embodiments.

[0126] Operation 801 includes simultaneously loading a first substrate onto a first cassette positioned in a first processing space, and loading a second substrate onto a second cassette positioned in a second processing space. The first substrate is one of a plurality of first substrates supported by the first cassette, and the second substrate is one of a plurality of second substrates supported by the second cassette. The two cassettes are moved by a transfer robot (e.g., Figure 1 The transfer robot 110 shown in FIG. 1 is used to load substrates simultaneously to save transfer time and improve overall throughput. That is, the operation of power and actuation components such as motors, slit valves, heat sources, and pressure and flow controllers occurs simultaneously (e.g., within a few seconds) between the two chamber sides having two processing spaces 224, 226 before, during, and after the substrates are transported through the openings 236 of the two processing spaces.

[0127] Operation 802 includes simultaneously moving the first base assembly and the second base assembly to raise and continuously rotate the first box relative to the first plurality of gas injection channels and to raise and continuously rotate the second box relative to the second plurality of gas injection channels. In one or more embodiments, the first and second base assemblies continue to rotate during operations 803, 804, and 806.

[0128] Operation 803 of the method includes simultaneously supplying one or more process gases to a first processing volume and a second processing volume of the dual chamber body at substantially the same flow rate, substantially the same gas temperature, and substantially the same pressure. The term "substantially" includes 5% or less differences associated with method 800. The first processing volume includes a first box (on a first susceptor assembly) supporting a plurality of first substrates disposed therein, and the second processing volume includes a second box (on a second susceptor assembly) supporting a plurality of second substrates disposed therein.

[0129] One or more process gases flow from a common gas panel. The one or more process gases may be any suitable process gas used in an epitaxial deposition process. The process gas may include a Group IV precursor gas, a Group V precursor gas, and / or a Group III precursor gas. In one or more embodiments, a mixture of different process gases may be used in operation 803. In one or more embodiments, the process gas may include, for example, a silicon-containing precursor such as silane, a halosilane, and / or any combination thereof. The silane may include silane (SiH4) and a silane having the empirical formula Si x H （2x + 2） Higher-order silanes such as disilane (Si2H6), trisilane (Si3H8) and tetrasilane (Si4H 10). The halosilanes may include monochlorosilane (MCS), dichlorosilane (DCS), trichlorosilane (TCS), hexachlorodisilane (HCDS), octachlorotrisilane (OCTS), silicon tetrachloride (STC) and / or any combination thereof. One or more process gases may include a germanium-containing precursor. One or more process gases may include a precursor gas. Depending on the desired conductive properties of the deposited epitaxial layer, the precursor gas may include, for example, phosphorus, boron, arsenic, gallium and / or aluminum. One or more process gases may include an etchant gas. The etchant gas may include, for example, or any gas containing halogen molecules, such as hydrogen chloride (HCl), chlorine (Cl) and / or hydrogen fluoride (HF). One or more process gases may include a carrier gas. The carrier gas may include, for example, nitrogen (N2), argon (Ar), helium (He) and / or hydrogen (H2).

[0130] For example, a multi-channel flow controller can be used to divert one or more processing gases flowing out of the gas panel 208. One or more processing gases then flow through the first and second gas injection channels 282a, 282b to enter the first and second processing spaces 224, 226. The diverted processing gas flows through the first and second gas injection channels 282a, 282b at substantially the same flow rate. There may be other equipment elements (not shown) along the processing gas flow path, such as flow controllers, valves and / or pumps. Additional equipment elements can be arranged between the gas panel 208 and the first and second gas injection channels 282a, 282b. Additional flow control elements can promote equal distribution of the processing gas flow between the first processing space 224 and the second processing space 226.

[0131] Operation 804 of method 800 includes simultaneously heating the first processing volume and the second processing volume to substantially the same volume temperature. The heating may include simultaneously heating the first substrate and the second substrate to substantially the same substrate temperature.

[0132] Operation 806 of method 800 includes flowing one or more process gases over the front and rear surfaces of each first substrate in the first processing space and each second substrate in the second processing space. The one or more process gases may be delivered to the substrates from the first and second gas injection channels 282a, 282b. The flow of the one or more process gases over the front and rear surfaces of the substrates promotes epitaxial deposition processes for depositing films on the front and rear surfaces of the substrates. The present disclosure contemplates that the one or more process gases may flow over one of the front or rear surfaces of the substrate (e.g., the front surface) for single-sided deposition.

[0133] Operation 808 of method 800 includes exhausting one or more process gases from the first processing space and the second processing space through a common exhaust device. The common exhaust device may include a common exhaust chamber. The common exhaust chamber may include a common exhaust conduit 271 and / or a second common exhaust conduit 228 discussed herein. Before entering the common exhaust conduit 271, the process gas is extracted from the first processing space 224 and the second processing space 226 through the first exhaust port 272a and the second exhaust port 272b. After the one or more process gases enter the common exhaust conduit 271, the one or more process gases are removed by the pump 210 through the common exhaust conduit 228.

[0134] Operation 810 of method 800 includes simultaneously moving the first pedestal assembly and the second pedestal assembly to orient the first cassette and the second cassette relative to the opening 236. Once oriented, the first and second pedestal assemblies are simultaneously lowered to engage lift pins with the first and second substrates so that the first and second substrates can be removed from the first and second processing volumes (through the opening 236). Fig. 9 According to one embodiment, the Figure 2 A schematic top plan view of a single upper window assembly 900 above a chamber body 230 on a first chamber side 201a and a second chamber side 201b. The single upper window assembly 900 includes a single upper window 916 and a chamber body 230. The single upper window 916 includes two inner windows 912a and 912b. The two inner windows 912a and 912b are arranged Figure 2 The first inner window 912a above the first processing space 224 is shown, and the Figure 2 The second inner window 912b is shown above the second processing space 226. The outer window support 914 is disposed around the first inner window 912a and the second inner window 912b, and supports the single upper window assembly 900 along a support groove similar to the support groove 304.

[0135] In an embodiment utilizing a single upper window assembly 900, a portion of the single upper window 916 is disposed above the middle of the central wall 232. The shape of the support groove 304 of the single upper window 916 is similar to two overlapping ovals or circles, so that the outer contour of the single upper window 916 is similar to the contour of an infinity symbol, a number 8, or a lemniscate. The upper window assembly 900 can be used with Figure 2-4 as well as Figures 5A-5E The embodiments shown are used together.

[0136] Although two process chamber sides with a common gas panel and exhaust system are described, the embodiments disclosed herein may be further scaled to include additional process chamber sides. In one or more embodiments, there may be three or four process chamber sides disposed adjacent to each other and having a common chamber body, such as chamber body 230. Figure 6 As shown, a single processing space may be used.

[0137] Fig.10 is a schematic side cross-sectional view of a processing device 1000 according to one embodiment. The processing device 1000 is similar to Figure 7 The processing device 700 shown in FIG. 7 is embodied in the embodiment of the present invention and includes one or more of its aspects, features, components, operations and / or characteristics.

[0138] The apparatus 1000 includes a plurality of gas injection channels 1082 formed in the chamber body 230 and in fluid communication with the processing volume 224, and one or more exhaust channels 1072 ( Fig.10 1082). The one or more exhaust channels 1072 are opposite to the multiple gas injection channels 1082. The one or more exhaust channels 1072 are in fluid communication with the processing space 224. Each of the multiple gas injection channels 1082 and the one or more exhaust channels 1072 is formed through one or more sidewalls of the chamber body 230 and through one or more liners 1020, which line the one or more sidewalls of the chamber body 230.

[0139] Each gas injection channel 1082 includes a gas channel 1085 formed in the chamber body 230 and one or more gas openings 1086 ( Fig.10 Two and three are shown in FIG. 108 ). One or more supply conduit systems are in fluid communication with the gas injection passage 1082. Fig.10 , the inner supply conduit system 1021 and the outer supply conduit system 1022 are in fluid communication with the gas injection channel 1082. The inner supply conduit system 1021 includes a plurality of inner gas boxes 1023 mounted to the chamber body 230 and in fluid communication with a set of inner gas injection channels 1082. The outer supply conduit system 1022 includes a plurality of outer gas boxes 1024 mounted to the chamber body 230 and in fluid communication with a set of outer gas injection channels 1082.

[0140] The processing device 1000 includes a flow guiding structure 1050 located in the processing space 224. The flow guiding structure 1050 includes one or more first flow diverters 1051 ( Fig.10 The first flow divider 1051 divides the processing space into a plurality of flow stages 1053 ( Figure 1 The flow guiding structure 1050 includes one or more second flow splitters 1052 oriented to intersect with the one or more first flow splitters 1051 and divide each of the plurality of flow stages 1053 into a plurality of flow segments 1054 ( Fig.10 Two flow segments 1054 are shown for each flow stage 1053). Fig.10 In the illustrated embodiment, each first flow splitter 1051 comprises a ring, and each of the one or more second flow splitters 1052 comprises a cylindrical sleeve surrounding an innermost flow segment 1054 of the flow segments 1054. The one or more first flow splitters 1051 are coupled to the one or more gaskets 1020.

[0141] The plurality of gas injection channels 1082 are positioned as a plurality of injection levels, so that each gas injection channel 1082 corresponds to one of the plurality of injection levels. Each injection level is aligned with a corresponding flow level 1053. The gas injection channel 1082 of each injection level leads to the outermost flow segment 1054 of the corresponding flow level. Fig.10 In the illustrated embodiment, two or three of the gas openings 1086 are grouped into each flow stage, and the gas openings 1086 are open to the outermost flow segments 1054 of the corresponding flow stage.

[0142] The apparatus 1000 includes a heat shield structure 1060 positioned in the processing volume 224. The heat shield structure 1060 includes a first shield plate 1061 and a second shield plate 1062 located inside the one or more second diverters 1052. The second shield plate 1062 is oriented to intersect the first shield plate 1061 and is at least partially supported by the one or more gaskets 1020. The first shield plate 1061 can be a cylindrical sleeve.

[0143] Each of the one or more second splitters 1052 includes a plurality of splitter inlet openings 1055 and a plurality of splitter outlet openings 1056 formed therein. The splitter outlet openings 1056 are opposite to the splitter inlet openings 1055. Fig.10 As shown, two or three splitter inlet openings 1055 and two or three splitter outlet openings 1056 are grouped into respective ones of the flow stages 1053 .

[0144] The first shield plate 1061 includes a plurality of shield inlet openings 1065 and a plurality of shield outlet openings 1066 formed therein. The shield outlet openings 1066 are opposite to the shield inlet openings 1065. The plurality of diverter inlet openings 1055 are offset from the plurality of shield inlet openings 1065 in the XY plane.

[0145] Each of the one or more gaskets 1020 , the one or more first shunts 1051 , the one or more second shunts 1052 , the first shielding plate 1061 , and the second shielding plate 1062 is formed of one or more of quartz, silicon carbide (SiC), or graphite coated with SiC.

[0146] The apparatus 1000 includes a box 1030 positioned in the processing space 224 and at least partially supported by the base assembly 250. The box 1030 is located inside the first shielding plate 1061. The preheating ring 1011 is located outside the box 1030. The preheating ring 1011 is coupled to one or more pads 1020 and / or is at least partially supported by one or more pads 1020. One or more second diverters 1052 are coupled to the preheating ring 1011 and / or are at least partially supported by the preheating ring 1011. The box 1030 includes a first box plate 1032 and a second box plate 1031 spaced apart from the first box plate 1032.

[0147] During operation (e.g., during epitaxial deposition operation), one or more process gases P1 are supplied to the processing volume 224 through the inner supply conduit system 1021 and the outer supply conduit system 1022 and through the plurality of gas injection channels 1082. The one or more process gases P1 are supplied from one or more gas sources 1096 in fluid communication with the plurality of gas injection channels 1082. The flow of the one or more process gases P1 is divided into a plurality of flow levels 1053. Dividing the process gas into a plurality of flow levels 1053 facilitates uniform processing (e.g., deposition) on the substrate, center-to-edge uniformity, and process adjustability.

[0148] The processing apparatus 1000 includes an exhaust duct system 1090. One or more process gases P1 may be exhausted through exhaust ports formed in one or more liners 1020, exhaust channels formed in the chamber body 230, and then through an exhaust box 1091. The one or more process gases P1 may flow out of the exhaust box 1091 and flow to an optional common exhaust box 1092, and then flow out through the duct using one or more pump devices 1097 (e.g., one or more vacuum pumps).

[0149] The purge gas P2 supplied from the purge gas source 1029 is introduced into the bottom region 205 of the process space 224 through one or more purge gas inlets 1084 formed in one or more sidewalls of the chamber body 230 .

[0150] One or more purge gas inlets 1084 are arranged at the height below the gas injection channel 1082. If one or more liners 1020 are used, a portion of one or more liners 1020 can be arranged between the gas injection channel 1082 and the one or more purge gas inlets 1084. In either case, one or more purge gas inlets 1084 are configured to guide the purge gas P2 in a substantially radially inward direction. One or more purge gas inlets 1084 can be configured to guide the purge gas P2 in an upward direction. During film formation processing, the susceptor assembly 250 is located at a position that can promote the purge gas P2 to flow through the back side of the first box plate 1032 substantially along the flow path. The purge gas P2 leaves the bottom area 105 and is discharged from the processing equipment 1000 through one or more purge gas exhaust channels 1002, and the purge gas exhaust channel 1002 is located at the opposite side of the processing space 224 relative to the one or more purge gas inlets 1084.

[0151] Although not shown for visual clarity Fig.10 , but the present disclosure contemplates that the processing apparatus 1000 may include one or more side heat sources (e.g. Figure 7 One or more side heat sources 418a, 418b shown in FIG.

[0152] Fig.11 According to one embodiment Fig.10 000 is an enlarged view of a schematic side cross-sectional view of a processing device 1000 shown in FIG.

[0153] The box 1030 includes a plurality of levels 1111 between a first box plate 1032 and a second box plate 1031 .

[0154] Each level 1111 includes an arcuate support 1112 having one or more inner protrusions 1113 that support the base plate 255 . Fig.11 1 shows a portion of a box 1030. The box 1030 includes a first level 1111a including a first arc-shaped support 1112a having a first inner protrusion 1113a and a second level 111b including a second arc-shaped support 1112b having a second inner protrusion 1113b. The first arc-shaped support 1112a and the second arc-shaped support 1112b are located between the first box plate 1032 and the second box plate 1031.

[0155] The box 1030 includes a first opening 1115 located outside the first arc support 1112a and a second opening 1116 located between the first arc support 1112a and the second arc support 1112b. The level spacing LS1 between the first level 1111a and the second level 1111b is 15mm or higher. The level spacing LS1 is defined between the first support surface 1116a of the first inner protrusion 1113a and the second support surface 1116b of the second inner protrusion 1113b. In one or more embodiments, the level spacing LS1 is 25mm or higher. In one or more embodiments, the level spacing LS1 is in the range of 38mm to 52mm. In one or more embodiments, the level spacing LS1 is in the range of 40mm to 70mm.

[0156] The level spacing LS1 may be used between each of the plurality of levels 1111. As an example, the box 1030 includes a third level 1111c, and the third level 1111c includes a third curved support 1112c positioned between the second curved support 1112b and the second box plate 1031. The third curved support 1112c has a third inner protrusion 1113c. The level spacing LS1 is between the third curved support 1112c and the second curved support 1112b.

[0157] A substrate spacing SS1 may be used between every two adjacent substrates 255. The substrate spacing SS1 is defined between the outer surfaces of the substrates facing each other. In one or more embodiments, the substrate spacing SS1 between two adjacent substrates 255 is equal to the level spacing LS1 minus the thickness of one of the substrates 255 (e.g., the lower substrate 255 of the two substrates 255). In one or more embodiments, the thickness is about 0.75 mm. Other thickness values ​​are contemplated. In one or more embodiments, the substrate spacing SS1 is proportional to the diameter of one of the substrates (e.g., the lower substrate 255 of the two substrates 255), and the ratio is 1:12 or higher. In one or more embodiments, the ratio is in the range of 1:8 to 1:5.7. In one or more embodiments, the substrate spacing SS1 is 15 mm or higher. In one or more embodiments, the substrate spacing SS1 is 25 mm or higher. In one or more embodiments, the substrate spacing SS1 is in the range of 38 mm to 72 mm, for example, in the range of 38 mm to 52 mm.

[0158] The layer spacing LS1 and / or substrate spacing SS1 are beneficial to increasing the growth rate of the deposited film, enhancing the processing uniformity and processing adjustability, while also being beneficial to reducing the processing time (e.g., number of cycles), increasing the chamber capacity, and reducing the size and footprint (e.g., the size and footprint of the chamber).

[0159] Each shield inlet opening 1065 and each shield outlet opening 1066 are aligned between two corresponding arc-shaped supports 1112 (eg, Fig.11 ). The locations of the shield inlet opening 1065 and the shield outlet opening 1066 facilitate providing one or more process gases P1 to the gaps between adjacent substrates 255, which facilitates process uniformity and process tunability.

[0160] The box 1030 includes a plurality of mounting posts 1081 extending through the arcuate supports 1112 (including the first arcuate support 1112a, the second arcuate support 1112b, and the third arcuate support 1112c).

[0161] Each mounting post 1081 of the plurality of mounting posts 1081 includes a protrusion interface between the corresponding mounting post and the arcuate support 1112. In one or more embodiments, the protrusion 1120 can extend outwardly relative to the mounting post 1081. In one or more embodiments, the protrusion can extend inwardly relative to the inner surface of the arcuate support 1112, such as into a groove formed in the outer surface of the mounting post 1081. The protrusion 1120 can include, for example, one or more pins or one or more arcuate ring segments. Fig.12 According to one embodiment Fig.10 and 11 A schematic top view of a processing device 1000 is shown in FIG.

[0162] The gas injection channel 1082 of each injection level includes one or more central gas openings 1086a, one or more first outer gas openings 1086b on a first side of the one or more central gas openings 1086a, and one or more second outer gas openings 1086c on a second side of the one or more central gas openings 1086a. The gas injection channel 1082 of each injection level includes one or more first intermediate gas openings 1086d located between the one or more central gas openings 1086a and the one or more first outer gas openings 1086b, and one or more second intermediate gas openings 1086e located between the one or more central gas openings 1086a and the outer gas openings 1086b, 1086c, and the outer gas openings 1086b, 1086c correspond to two edge regions of the substrate.

[0163] Gas openings 1086a-1086e correspond to five flow control and tunability zones per substrate. As an example, one or more central gas openings 1086a correspond to a central zone of the substrate and other numbers of flow zones (eg, up to ten flow zones or more) are contemplated.

[0164] Fig.13 According to one embodiment Fig.10 and 11 A schematic perspective view of the box 1030 shown in FIG. Fig.10 In the illustrated embodiment, the box 1030 includes twelve levels 1111 that support twelve substrates 255. Fig.13 In the illustrated embodiment, the cassette 1030 includes three levels 1111 configured to support up to three substrates 255 during simultaneous processing. The present disclosure contemplates different numbers of levels 1111 (eg, two) for the cassette 1030 to support different numbers of substrates (eg, two).

[0165] Each arc support 1112 of the level 1111 is a ring or one or more ring segments. Fig.13 In the illustrated embodiment, each arcuate support 1112 includes a gap 1301, so that each arcuate support 1112 is a single C-shaped ring segment. The box 1030 includes a base segment 1305, and the arm of the second support frame 299 can be coupled to the base segment 1305 through the first box plate 1032. The first box plate 1032 can be a single piece or can include multiple pieces (e.g. Fig.10 The mounting post 1081 extends at least partially through the second cassette plate 1031 at a first end and at least partially through the base section 1305 at a second end.

[0166] Fig.14 1 is a schematic partial side cross-sectional view of a box 1430 and a flow guiding structure 1450 according to one embodiment. The box 1430 has two levels that support two substrates 255a, 255b during processing. The flow guiding structure 1450 includes a single first flow divider 1051. Using the first flow divider 1051, the flow guiding structure 1450 provides two independent process gas flows (which can be the same or different process gases), one process gas flow to each of the two substrates 255a, 255b. As an example, the flow guiding structure 1450 can provide a first process gas P1 to flow through the first substrate 255a, and a second process gas P2 to flow through the second substrate 255b.

[0167] For each level of the box 1430, the top plate (the top plate that defines the gas flow path above the substrate corresponding to this level) is defined by the lower surface of the barrier above this level. In one or more embodiments, except for the uppermost level, the top plate of each level of the box 1430 can be defined by the lower surface 1471 of the adjacent support (e.g., arc support 1112b) above this level and / or the lower surface of the substrate (e.g., substrate 255b) supported by the adjacent support. Other barriers are contemplated. For the uppermost level, the top plate can be defined by the lower surface 1472 of the second box plate 1031 or other barrier. The first plate 1032 is located at a first plate spacing PS1 from the lowermost support 1112a, and the second box plate 1031 is located at a second plate spacing PS2 from the uppermost support 1112b. In one or more embodiments, one or more of the first plate spacing PS1 and / or the second plate spacing PS2 is equal to the level spacing LS1 minus the height H1 of the supports 1112a, 1112b. The present disclosure contemplates that the first cassette plate 1032 may be omitted such that the second cassette plate 1031 may be referred to as a cassette plate or a first cassette plate.

[0168] In one or more embodiments, the first box plate 1032 is used when the second box plate 1031 is formed of an opaque material.

[0169] In one or more embodiments, the boxes described herein (e.g., box 1430 and / or box 230) may include a total of two levels (supporting a total of two substrates) or a total of three levels (supporting a total of three substrates) to facilitate enhanced deposition uniformity and device performance while facilitating increased throughput at a low chamber size and footprint.

[0170] Fig.15 According to one embodiment Fig.10 An enlarged view of the schematic side cross-sectional view of the processing device 1000 shown in FIG. Fig.15 In the illustrated embodiment, the box 1030 includes a total of four levels 1111a-1111d that support a total of four substrates 255. The second level spacing LS2 and the substrate spacing SS2 are used for the two outermost substrates 255. The level spacing LS1 and the substrate spacing SS1 are used for the inner substrates 255. The second level spacing LS2 is smaller than the level spacing LS1, and the second substrate spacing SS2 is smaller than the substrate spacing SS1. In one or more embodiments, the level spacing LS1 is two to three times larger than the second level spacing LS2, and / or the substrate spacing SS1 is two to three times larger than the second substrate spacing SS2.

[0171] Fig.16 is a schematic diagram of a method 1600 of processing a plurality of substrates according to one embodiment.

[0172] Operation 1602 of method 1600 includes positioning a first substrate in a processing volume of a chamber. The first substrate has a diameter.

[0173] Operation 1604 includes positioning a second substrate in the processing volume and spaced apart from the first substrate by a substrate spacing SS1. In one or more embodiments, substrate spacing SS1 is proportional to a diameter of the first substrate.

[0174] Operation 1606 includes flowing one or more process gases into the processing volume.

[0175] Operation 1608 includes heating the first substrate and the second substrate. It is contemplated that operation 1608 may occur before, after, or simultaneously with operation 1606.

[0176] Operation 1610 includes simultaneously depositing one or more layers on each of the first substrate and the second substrate. In one or more embodiments, the one or more layers are simultaneously deposited on each of the first substrate and the second substrate at an average growth rate of 10 angstroms / second or more.

[0177] Fig.17 is a schematic diagram of a graph 1700 plotting average growth rate versus substrate spacing according to one embodiment.

[0178] As shown by curve 1702, the average growth rate (eg, epitaxial growth rate) may increase as the substrate spacing increases. After a certain point, an increase in the substrate spacing does not result in a corresponding increase in the average growth rate.

[0179] Using the subject matter described herein (eg, level spacing LS1 and / or substrate spacing SS1), high average growth rates are facilitated while facilitating process tunability and reduced size and footprint (eg, size and footprint of a chamber).

[0180] Fig.18 18 is a schematic diagram of a graph 1800 that plots gas velocity versus position on a substrate according to one embodiment. Position refers to a position along a diameter of the substrate, with "0" representing the center of the substrate. As shown by curve 1802, the gas velocity is relatively continuous across the diameter of the substrate surface, for example, from the leading edge of the substrate to the center of the substrate.

[0181] Using the subject matter described herein (eg, level spacing LS1 and / or substrate spacing SS1 ), a more continuous gas flow rate of gas flowing across the substrate surface is facilitated.

[0182] Fig.19 According to one embodiment, the box 1930 and Fig.141450. The two supports of the box 1930 each include a base 1912a, 1912b supporting a corresponding substrate 255a, 255b. Each base 1912a and 1912b includes a pin opening 1920 through which a lifting pin 289 can pass to contact and lift the substrate 255a, 255b.

[0183] Advantages of the present disclosure include reduced processing time, increased chamber capacity, increased growth rate of deposited films, enhanced device performance, more continuous gas velocity of gas flowing through substrates, more uniform device performance across multiple substrates, more uniform and stable thermal treatment across multiple substrates, increased throughput, and reduced size and footprint (e.g., size and footprint of the chamber). Advantages also include unified adjustability, such as process temperature control and adjustability, gas parameter control and adjustability, and substrate center-to-edge control and adjustability. Advantages also include enhanced device performance and modularity of applications. For example, batch processing can be used for relatively complex epitaxial deposition operations with a relatively small footprint and relatively large throughput, while maintaining or increasing growth rates and maintaining or increasing device performance. For example, such advantages can be promoted for an internal substrate that is not the outermost substrate among multiple substrates supported on a box.

[0184] These advantages of the present application are facilitated by the implementation of the present disclosure. It is contemplated that the aspects described herein may be combined. For example, one or more features, aspects, components, operations, and / or characteristics of the system 100, the processing equipment 200, the chamber body 230, the chamber body 390, the chamber body 430a, the chamber body 430b, the chamber body 430c, the chamber body 430d, the processing equipment 600, the processing equipment 700, the method 800, the single upper window assembly 900, the processing equipment 1000, the box 1030, the flow guide structure 1050, the box 1430, the flow guide structure 1450, and / or the method 1600 may be combined. It is also contemplated that any combination may achieve the above benefits.

[0185] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, and the scope of the present disclosure is determined by the following claims.

Claims

1. An apparatus for substrate processing, the apparatus comprising: A chamber body, the chamber body comprising: Processing space, a plurality of gas injection channels formed in the chamber body and in fluid communication with the processing space, and one or more exhaust channels, the one or more exhaust channels formed in the chamber body opposite to the plurality of gas injection channels, the one or more exhaust channels being in fluid communication with the processing space; and one or more heat sources configured to generate heat; a susceptor assembly positioned in the processing space; as well as a cartridge positioned in the processing volume and at least partially supported by the base assembly, the cartridge comprising: a plurality of levels arranged relative to each other in a vertical direction, each level of the plurality of levels comprising a support surface configured to support a substrate, The level spacing between adjacent levels in the plurality of levels is 25 mm or greater, and the level spacing is defined between the support surfaces of the adjacent levels. 2 . The apparatus of claim 1 , wherein the level spacing is in the range of 40 mm to 70 mm, and the number of levels in the plurality of levels is two or three.

3. The apparatus of claim 1, wherein each of the plurality of levels comprises a base having pin openings.

4. The apparatus of claim 1, wherein the plurality of levels comprises: a first level, the first level comprising a first arcuate support having a first inner protrusion having a first support surface, and a second level, the second level comprising a second arcuate support having a second inner protrusion having a second support surface, The first opening is located on the outer side of the first arc-shaped support, and the second opening is located between the first arc-shaped support and the second arc-shaped support. Each of the first arc-shaped support and the second arc-shaped support is a ring or one or more ring segments, and the box further includes a plurality of mounting posts extending through the first arc-shaped support and the second arc-shaped support.

5. The apparatus of claim 4, wherein the cartridge further comprises: A box plate is positioned to be spaced apart from the second arc-shaped support by a board spacing, wherein the board spacing is equal to the level spacing minus the height of the second arc-shaped support.

6. The apparatus of claim 4, wherein the cartridge further comprises: A third level, the third level comprising a third arc-shaped support having a third inner protrusion having a third support surface A second level spacing between the second level and the third level is smaller than the level spacing, and the second level spacing is defined between the second supporting surface of the second inner protruding portion and the third supporting surface of the third inner protruding portion.

7. The apparatus of claim 1, further comprising: A plurality of side sensors configured to measure the temperature within the processing space from one side of the processing space, wherein the plurality of side sensors are arranged in a plurality of sensor levels corresponding to the plurality of levels of the box such that one or more side sensors correspond to each level of the box.

8. The apparatus of claim 1, wherein the chamber body is a dual chamber body, the processing space is located on a first side of a reference plane, and the dual chamber body further comprises a second processing space located on a second side of the reference plane, and the apparatus further comprises: a second susceptor assembly positioned in the second processing volume; as well as a second cartridge positioned in the second processing volume and at least partially supported by the second base assembly, the second cartridge comprising: a plurality of second levels arranged relative to each other in a vertical direction, each second level of the plurality of second levels comprising a second support surface configured to support a second substrate, Wherein a second level distance between adjacent second levels in the plurality of second levels is 25 mm or greater, and the second level distance is defined between the second supporting surfaces of the adjacent second levels.

9. An apparatus for substrate processing, the apparatus comprising: A chamber body, the chamber body comprising: Processing space, a plurality of gas injection channels formed in the chamber body, and one or more exhaust passages formed in the chamber body opposite the plurality of gas injection passages; one or more heat sources configured to generate heat; a susceptor assembly positioned in the processing space; as well as A flow guiding structure, the flow guiding structure is positioned in the processing space, and the flow guiding structure comprises: one or more first flow dividers, the one or more first flow dividers dividing the processing space into a plurality of flow stages, and One or more second flow splitters are oriented to intersect the one or more first flow splitters and to divide each of the plurality of flow stages into a plurality of flow segments.

10. The apparatus of claim 9, wherein the plurality of gas injection channels are positioned as a plurality of injection levels, each injection level is aligned with a corresponding flow level, and the gas injection channels of each injection level lead to the outermost flow segment of the corresponding flow level.

11. The apparatus of claim 10, wherein the gas injection channel of each injection level comprises: one or more central gas openings; one or more first outer gas openings on a first side of the one or more central gas openings; one or more second outer gas openings on a second side of the one or more central gas openings; one or more first intermediate gas openings between the one or more center gas openings and the one or more first outer gas openings; and One or more second intermediate gas openings, the one or more second intermediate gas openings being between the one or more center gas openings and the one or more second outer gas openings.

12. The apparatus of claim 9, further comprising one or more liners configured to form a lining of one or more side walls of the chamber body, wherein the one or more first diverters are coupled to the one or more liners.

13. The apparatus of claim 12, further comprising a heat shielding structure positioned in the processing space, the heat shielding structure comprising: a first shielding plate, the first shielding plate being located inside the one or more second diverters; and A second shield plate is oriented to intersect the first shield plate and is at least partially supported by the one or more gaskets.

14. The apparatus of claim 13, wherein: Each of the one or more second splitters includes a plurality of splitter inlet openings and a plurality of splitter outlet openings formed therein; and The first shield plate includes a plurality of shield inlet openings and a plurality of shield outlet openings formed therein.

15. The apparatus of claim 14, wherein the plurality of diverter inlet openings are offset from the plurality of shield inlet openings.

16. The apparatus of claim 13, further comprising a box positioned inside the first shielding plate and at least partially supported by the base assembly, the box comprising: a first level comprising a first support surface configured to support a first substrate; and a second level, the second level comprising a second support surface, the second support surface being configured to support a second substrate, The level distance between the first level and the second level is 25 mm or greater, and the level distance is defined between the first supporting surface and the second supporting surface.

17. The apparatus of claim 13, wherein each of the one or more first shunts, the one or more second shunts, the first shield plate, and the second shield plate are formed of one or more of quartz, silicon carbide (SiC), or graphite coated with SiC.

18. A method of processing a plurality of substrates, the method comprising: positioning a first substrate in a processing volume of the chamber, the first substrate having a diameter; positioning a second substrate in the processing space and spaced apart from the first substrate by a substrate spacing, the substrate spacing being proportional to the diameter of the first substrate, the ratio being 1:12 or higher, flowing one or more process gases into the process space; heating the first substrate and the second substrate; and One or more layers are deposited simultaneously on each of the first substrate and the second substrate.

19. The method of claim 18, wherein the ratio is in the range of 1:8 to 1:5.

7.

20. The method of claim 19, wherein the one or more layers are simultaneously deposited on each of the first substrate and the second substrate at an average growth rate of 10 angstroms / second or more.

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