Silicon wafer edge grinding equipment, method and device

Abstract

The invention provides silicon wafer edge grinding equipment, method and device. The equipment comprises a bearing table, a grinding wheel assembly, a grinding wheel detection assembly and a control unit. The bearing table is used for bearing and fixing a silicon wafer; the grinding wheel assembly is arranged close to the bearing table and used for grinding the edge of the silicon wafer. The grinding wheel detection assembly is arranged close to the grinding wheel assembly and is used for detecting size parameters of a groove in the side face of the grinding wheel assembly to obtain a detection result; the groove is used for grinding the edge of the silicon wafer; the control unit is electrically connected with the grinding wheel detection assembly and is used for determining a first edge parameter of a silicon wafer obtained by grinding of the grinding wheel assembly according to the detection result; and generating an indication signal according to the first edge data and the obtained target edge parameter of the silicon wafer to be ground. The scheme provided by the invention solves the problems that the silicon wafer is easy to waste and leak detection is easy to cause when the edge parameters of the processed silicon wafer are subjected to spot test.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a silicon wafer edge grinding device, method and apparatus. Background Art

[0002] The existing edge grinding data control is to use special measuring equipment to perform random tests on the processed silicon wafers, and then perform manual corrections on the edge grinding equipment to meet the requirements for edge parameter control. However, the measurement of silicon wafers occurs after processing. Once the edge parameters of the silicon wafer are abnormal, it will not only directly lead to the scrapping of the silicon wafer, but also waste the time cost and consumables cost of processing the silicon wafer. In addition, the random testing method is bound to have missed detections, and cannot guarantee the pass rate of the edge parameters of the silicon wafers that flow out to the client. Summary of the invention

[0003] The embodiments of the present invention provide a silicon wafer edge grinding device, method and apparatus, which are used to solve the problem that the edge parameter sampling of the processed silicon wafer in the prior art easily causes the waste of silicon wafers and the possibility of missed detection.

[0004] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0005] In a first aspect, an embodiment of the present invention provides a silicon wafer edge grinding device, comprising:

[0006] A bearing platform, a grinding wheel assembly, a grinding wheel detection assembly and a control unit;

[0007] The carrying platform is used to carry and fix the silicon wafer;

[0008] The grinding wheel assembly is arranged close to the bearing platform and is used for grinding the edge of the silicon wafer;

[0009] The grinding wheel detection component is arranged close to the grinding wheel component and is used to detect the size parameters of the groove on the side of the grinding wheel component to obtain the detection result; the groove is used to grind the edge of the silicon wafer;

[0010] The control unit is electrically connected to the grinding wheel detection assembly, and is used to determine a first edge parameter of the silicon wafer obtained by grinding the grinding wheel assembly according to the detection result; and generate an indication signal according to the first edge data and the acquired target edge parameter of the silicon wafer to be ground, and send the indication signal to the carrier, so that the carrier adjusts the distance from the grinding wheel assembly;

[0011] The control unit stores a target model, the input of the target model is the size parameter of the groove of the first grinding wheel, and the output of the target model is the second edge parameter of the silicon wafer obtained by grinding with the first grinding wheel.

[0012] Furthermore, the grinding wheel assembly comprises:

[0013] Grinding wheels and drive shafts;

[0014] The grinding wheel is nested in one end of the driving shaft and rotates under the driving of the driving shaft.

[0015] Furthermore, the grinding wheel detection assembly comprises:

[0016] Support rod and detector;

[0017] The detector is arranged at one end of the support rod and is used to detect the size parameters of the groove of the grinding wheel;

[0018] The center of the detector is opposite to the center of the groove.

[0019] Furthermore, the detector comprises:

[0020] A scanner, used to scan the dimension parameters of the groove; or,

[0021] A plurality of uniformly arranged signal transceivers are provided, wherein the signal transceivers transmit a detection signal to the groove, receive the detection signal reflected by the groove, and determine the size parameter of the groove according to a first time of transmitting the detection signal and a second time of receiving the detection signal.

[0022] Furthermore, the edge parameters of the silicon wafer include:

[0023] The chamfer width and diameter of the edge of the silicon wafer;

[0024] The size parameters of the groove include:

[0025] The depth of the groove and the chamfer angle of the groove.

[0026] In a second aspect, an embodiment of the present invention provides a silicon wafer edge grinding method, which is applied to the silicon wafer edge grinding device as described above, comprising:

[0027] Obtaining target edge parameters of the silicon wafer to be polished;

[0028] Detecting the size parameters of the groove of the grinding wheel assembly by the grinding wheel detection assembly to obtain a detection result, and sending the detection result to the control unit;

[0029] The control unit determines an indication signal according to the detection result and the target edge parameter and sends the indication signal to the supporting platform;

[0030] The bearing platform adjusts the distance between the bearing platform and the grinding wheel assembly according to the indication signal;

[0031] The silicon wafer edge grinding device is operated to grind the silicon wafer to be ground.

[0032] Further, determining the indication signal includes:

[0033] The control unit inputs the detection result into the target model to obtain a predicted value; the predicted value is an edge parameter of a first silicon wafer obtained by grinding the silicon wafer to be ground by the grinding wheel assembly;

[0034] Comparing the predicted value with the target edge parameter;

[0035] In a case where the predicted value is greater than or equal to the target edge parameter, determining an indication signal for reducing the distance between the carrier platform and the grinding wheel assembly;

[0036] The predicted values ​​include: the edge chamfer width and diameter of the first silicon wafer;

[0037] The target edge parameters include: the chamfer width and diameter of the edge of the silicon wafer to be ground.

[0038] Furthermore, the silicon wafer edge grinding method further comprises:

[0039] When the predicted value is less than the target edge parameter, the grinding wheel is replaced.

[0040] Further, the target edge parameters of the silicon wafer to be polished are obtained, including:

[0041] The target edge parameters of the silicon wafer to be polished are acquired by a silicon wafer surface sampler or a silicon wafer edge data collector.

[0042] In a third aspect, an embodiment of the present invention provides a silicon wafer edge grinding device, comprising:

[0043] An acquisition module, used to acquire target edge parameters of the silicon wafer to be polished;

[0044] A detection module, used for detecting the size parameters of the groove of the grinding wheel assembly through the grinding wheel detection assembly, obtaining the detection result, and sending the detection result to the control unit;

[0045] A determination module, configured for the control unit to determine an indication signal according to the detection result and the target edge parameter, and to send the indication signal to the carrier platform;

[0046] An adjustment module, used for the bearing platform to adjust the distance between the bearing platform and the grinding wheel assembly according to the indication signal;

[0047] The operation module is used to operate the silicon wafer edge grinding equipment to grind the silicon wafer to be ground.

[0048] The beneficial effects of the present invention are:

[0049] The silicon wafer edge grinding equipment of the embodiment of the present invention can, through the grinding wheel detection component, measure the size parameters of the grooves in the grinding wheel component for grinding the silicon wafer; then predict the first edge data of the silicon wafer ground by the grinding wheel component through the target model stored in the control unit according to the size parameters; and judge whether the grinding component is suitable for the silicon wafer to be ground through the first edge data and the acquired target edge data of the silicon wafer to be ground, thereby adjusting the distance between the supporting platform and the grinding wheel component so that the grinding wheel component can grind a silicon wafer that meets the requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 A schematic diagram showing the structure of a silicon wafer edge grinding device according to an embodiment of the present invention;

[0051] Figure 2 A schematic diagram showing the detector of the embodiment of the present invention detecting the groove;

[0052] Figure 3 A schematic diagram showing the steps of a method for grinding a silicon wafer edge according to an embodiment of the present invention;

[0053] Figure 4 A schematic diagram showing the structure of a silicon wafer edge data collector according to an embodiment of the present invention;

[0054] Figure 5 A schematic diagram of a module of a silicon wafer edge grinding device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0055] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will be described in detail in conjunction with the accompanying drawings and specific embodiments. In the following description, specific details such as specific configurations and components are provided only to help fully understand the embodiments of the present invention. Therefore, it should be clear to those skilled in the art that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present invention. In addition, for clarity and brevity, the description of known functions and structures is omitted.

[0056] It should be understood that the references to "one embodiment" or "an embodiment" throughout the specification mean that the specific features, structures, or characteristics associated with the embodiment are included in at least one embodiment of the present invention. Therefore, the references to "in one embodiment" or "in an embodiment" appearing throughout the specification do not necessarily refer to the same embodiment. In addition, these specific features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0057] Aiming at the problem that the edge parameter sampling of processed silicon wafers in the prior art easily causes waste of silicon wafers and there is a problem of missed detection, the present invention provides a silicon wafer edge grinding device, method and apparatus.

[0058] An embodiment of the present invention provides a silicon wafer edge grinding device, comprising:

[0059] A bearing platform, a grinding wheel assembly, a grinding wheel detection assembly and a control unit;

[0060] The carrying platform is used to carry and fix the silicon wafer A;

[0061] The grinding wheel assembly is arranged close to the bearing platform and is used for grinding the edge of the silicon wafer;

[0062] The grinding wheel detection component is arranged close to the grinding wheel component and is used to detect the size parameters of the groove on the side of the grinding wheel component to obtain the detection result; the groove is used to grind the edge of the silicon wafer;

[0063] The control unit is electrically connected to the grinding wheel detection assembly, and is used to determine a first edge parameter of the silicon wafer obtained by grinding the grinding wheel assembly according to the detection result; and generate an indication signal according to the first edge data and the acquired target edge parameter of the silicon wafer to be ground, and send the indication signal to the carrier, so that the carrier adjusts the distance from the grinding wheel assembly;

[0064] The control unit stores a target model, the input of the target model is the size parameter of the groove of the first grinding wheel, and the output of the target model is the second edge parameter of the silicon wafer obtained by grinding with the first grinding wheel.

[0065] Optionally, the edge parameters of the silicon wafer include:

[0066] The chamfer width and diameter of the edge of the silicon wafer;

[0067] The size parameters of the groove include:

[0068] The depth of the groove and the chamfer angle of the groove.

[0069] It should be noted that the edge parameters of the silicon wafer that can be processed (ground) by different size parameters of the groove are different. For example, the surface width of the silicon wafer that can be processed (ground) by the groove determined by the chamfer angle is a fixed value. Therefore, it can be judged by the first edge data and the target edge parameters whether the grinding wheel assembly meets the grinding requirements of the silicon wafer to be ground.

[0070] In the embodiment of the present invention, when the grinding wheel assembly meets the grinding requirements of the silicon wafer to be ground, the silicon wafer to be ground can be ground by adjusting the distance between the carrier platform and the grinding wheel assembly, and a silicon wafer meeting the edge requirements can be obtained;

[0071] When the grinding wheel assembly does not meet the grinding requirements for the silicon wafer to be ground, no matter how the distance between the carrier platform and the grinding wheel assembly is adjusted, the grinding wheel assembly cannot grind a silicon wafer that meets the edge requirements, and the grinding wheel assembly needs to be replaced.

[0072] The silicon wafer edge grinding equipment of the embodiment of the present invention can, through the grinding wheel detection component, measure the size parameters of the grooves in the grinding wheel component for grinding the silicon wafer; then predict the first edge data of the silicon wafer ground by the grinding wheel component through the target model stored in the control unit according to the size parameters; and judge whether the grinding component is suitable for the silicon wafer to be ground through the first edge data and the acquired target edge data of the silicon wafer to be ground, thereby adjusting the distance between the supporting platform and the grinding wheel component so that the grinding wheel component can grind a silicon wafer that meets the requirements.

[0073] like Figure 1 As shown, the grinding wheel assembly comprises:

[0074] A grinding wheel 11 and a drive shaft 12;

[0075] The grinding wheel 11 is embedded in one end of the driving shaft 12 and rotates under the driving of the driving shaft 12 .

[0076] Optionally, at least one groove is provided on the side of the grinding wheel;

[0077] Each of the grooves is arranged around the grinding wheel.

[0078] Optionally, the size parameters of each groove on the grinding wheel are the same or different.

[0079] Optionally, the driving shaft can be moved along its axial direction relative to the supporting platform to change different grooves on the grinding wheel for grinding the silicon wafer on the supporting platform.

[0080] Optionally, the grinding wheel detection assembly comprises:

[0081] Support rod 21 and detector 22;

[0082] The detector 22 is disposed at one end of the support rod 21 and is used to detect the size parameters of the groove 13 of the grinding wheel 11;

[0083] The center B of the detector 22 faces the center C of the groove 13 .

[0084] like Figure 2 As shown, the detector 22 includes:

[0085] A scanner, used to scan the size parameters of the groove 13; or,

[0086] A plurality of uniformly arranged signal transceivers transmit a detection signal to the groove 13, receive the detection signal reflected by the groove 13, and determine the size parameter of the groove 13 according to a first time of transmitting the detection signal and a second time of receiving the detection signal.

[0087] Optionally, the signal transceiver includes:

[0088] Optical signal transceiver and acoustic signal transceiver.

[0089] In the embodiment of the present invention, when the detector is the scanner, the detector directly scans the groove to obtain the size parameters of the groove.

[0090] In the embodiment of the present invention, when the detector is the signal transceiver, the size parameter of the groove is determined according to the first time, the second time and the propagation speed of the detection signal.

[0091] The silicon wafer edge grinding device of the embodiment of the present invention can detect the size parameters of the groove of the grinding wheel through the grinding wheel detection component, so that the control unit can predict the first edge data according to the size parameters of the groove.

[0092] like Figure 3 As shown, an embodiment of the present invention further provides a silicon wafer edge grinding method, which is applied to the silicon wafer edge grinding device as described above, and comprises the following steps:

[0093] Step 301, obtaining target edge parameters of the silicon wafer to be polished;

[0094] Step 302, detecting the size parameters of the groove of the grinding wheel assembly by the grinding wheel detection assembly, obtaining a detection result, and sending the detection result to the control unit;

[0095] Step 303, the control unit determines an indication signal according to the detection result and the target edge parameter and sends the indication signal to the supporting platform;

[0096] Step 304, the carrier adjusts the distance between the carrier and the grinding wheel assembly according to the indication signal;

[0097] Step 305: operate the silicon wafer edge grinding device to grind the silicon wafer to be ground.

[0098] The silicon wafer edge grinding method of the embodiment of the present invention can detect the size parameters of the grooves in the grinding wheel assembly for grinding the silicon wafer through the grinding wheel detection component; then predict the first edge data of the silicon wafer ground by the grinding wheel assembly through the target model stored in the control unit according to the size parameters; and judge whether the grinding assembly is suitable for the silicon wafer to be ground through the first edge data and the acquired target edge data of the silicon wafer to be ground, thereby adjusting the distance between the support platform and the grinding wheel assembly so that the grinding wheel assembly can grind a silicon wafer that meets the requirements.

[0099] Optionally, the control unit determines an indication signal according to the detection result and the target edge parameter, including:

[0100] The control unit inputs the detection result into the target model to obtain a predicted value; the predicted value is an edge parameter of a first silicon wafer obtained by grinding the silicon wafer to be ground by the grinding wheel assembly;

[0101] Comparing the predicted value with the target edge parameter;

[0102] In a case where the predicted value is greater than or equal to the target edge parameter, determining an indication signal for reducing the distance between the carrier platform and the grinding wheel assembly;

[0103] The predicted values ​​include: the edge chamfer width and diameter of the first silicon wafer;

[0104] The target edge parameters include: the chamfer width and diameter of the edge of the silicon wafer to be ground.

[0105] It should be noted that the edge parameters of the silicon wafer that can be processed (ground) by different size parameters of the groove are different. For example, the surface width of the silicon wafer that can be processed (ground) by the groove determined by the chamfer angle is a fixed value. Therefore, it can be judged by the first edge data and the target edge parameters whether the grinding wheel assembly meets the grinding requirements of the silicon wafer to be ground.

[0106] In the embodiment of the present invention, when the grinding wheel assembly meets the grinding requirements of the silicon wafer to be ground, the silicon wafer to be ground can be ground by adjusting the distance between the carrier platform and the grinding wheel assembly, and a silicon wafer meeting the edge requirements can be obtained;

[0107] When the grinding wheel assembly does not meet the grinding requirements for the silicon wafer to be ground, no matter how the distance between the carrier platform and the grinding wheel assembly is adjusted, the grinding wheel assembly cannot grind a silicon wafer that meets the edge requirements, and the grinding wheel assembly needs to be replaced.

[0108] Optionally, the silicon wafer edge grinding method further comprises:

[0109] When the predicted value is less than the target edge parameter, the grinding wheel is replaced.

[0110] Optionally, replacing the grinding wheel comprises:

[0111] Replace the grinding wheel; or,

[0112] The driving shaft is controlled to move along its axial direction to change the first groove on the grinding wheel into a second groove.

[0113] Optionally, a plurality of the grooves are provided on the grinding wheel, and the size parameters of each groove are the same or different.

[0114] It should be noted that, when the size parameters of all the grooves on the grinding wheel are the same, the replacement of the grinding wheel means replacing it with another grinding wheel with different groove size parameters;

[0115] When the size parameters of the grooves on the grinding wheel are different, replacing the grinding wheel comprises:

[0116] The driving shaft is controlled to move along its axial direction to change the first groove on the grinding wheel into a second groove.

[0117] The wafer edge grinding method of the embodiment of the present invention can make the ground silicon wafer meet the edge data requirements by replacing the grinding wheel when the grinding wheel is not suitable for the current grinding requirements of the silicon wafer.

[0118] Optionally, obtaining target edge parameters of the silicon wafer to be ground includes:

[0119] The target edge parameters of the silicon wafer to be polished are acquired by a silicon wafer surface sampler or a silicon wafer edge data collector.

[0120] like Figure 4 As shown, the silicon wafer edge data collector comprises:

[0121] A first collector 31 and a second collector 32;

[0122] The first collector 31 and the second collector 32 are disposed on two sides of the silicon wafer relative to each other, and detect the edges of the two sides of the silicon wafer respectively to obtain the target edge parameters.

[0123] like Figure 5 As shown, the embodiment of the present invention further provides a silicon wafer edge grinding device 500, comprising:

[0124] An acquisition module 501 is used to acquire target edge parameters of the silicon wafer to be polished;

[0125] The detection module 502 is used to detect the size parameters of the groove of the grinding wheel assembly through the grinding wheel detection assembly, obtain the detection result, and send the detection result to the control unit;

[0126] A determination module 503, configured for the control unit to determine an indication signal according to the detection result and the target edge parameter, and to send the indication signal to the carrier platform;

[0127] An adjustment module 504, configured for adjusting the distance between the carrier platform and the grinding wheel assembly according to the indication signal;

[0128] The operation module 505 is used to operate the silicon wafer edge grinding equipment to grind the silicon wafer to be ground.

[0129] The silicon wafer edge grinding device of the embodiment of the present invention can, through the grinding wheel detection component, measure the size parameters of the grooves in the grinding wheel component for grinding the silicon wafer; then predict the first edge data of the silicon wafer ground by the grinding wheel component through the target model stored in the control unit according to the size parameters; and judge whether the grinding component is suitable for the silicon wafer to be ground through the first edge data and the acquired target edge data of the silicon wafer to be ground, thereby adjusting the distance between the supporting platform and the grinding wheel component so that the grinding wheel component can grind a silicon wafer that meets the requirements.

[0130] Optionally, the determining module is further used to:

[0131] The control unit inputs the detection result into the target model to obtain a predicted value; the predicted value is an edge parameter of a first silicon wafer obtained by grinding the silicon wafer to be ground by the grinding wheel assembly;

[0132] Comparing the predicted value with the target edge parameter;

[0133] In a case where the predicted value is greater than or equal to the target edge parameter, determining an indication signal for reducing the distance between the carrier platform and the grinding wheel assembly;

[0134] The predicted values ​​include: the edge chamfer width and diameter of the first silicon wafer;

[0135] The target edge parameters include: the chamfer width and diameter of the edge of the silicon wafer to be ground.

[0136] Optionally, the acquisition module is further used to:

[0137] The target edge parameters of the silicon wafer to be polished are acquired by a silicon wafer surface sampler or a silicon wafer edge data collector.

[0138] In addition, a specific embodiment of the present invention further provides a computer-readable storage medium on which a computer program is stored, and when the program is executed by a processor, the steps of the above-mentioned silicon wafer edge grinding method are implemented. And the same technical effect can be achieved, so in order to avoid repetition, it will not be repeated here.

[0139] The embodiment of the present application also provides a computer program product, including computer instructions. When the computer instructions are executed by a processor, the various processes of the above-mentioned silicon wafer edge grinding method embodiment are implemented, and the same technical effect can be achieved. To avoid repetition, they are not repeated here.

[0140] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary personnel in this technical field, several improvements and modifications can be made without departing from the principles described in the present invention. These improvements and modifications are also within the scope of protection of the present invention.

Claims

1. A silicon wafer edge grinding device, characterized in that: include: A bearing platform, a grinding wheel assembly, a grinding wheel detection assembly and a control unit; The carrying platform is used to carry and fix the silicon wafer; The grinding wheel assembly is arranged close to the bearing platform and is used for grinding the edge of the silicon wafer; The grinding wheel detection component is arranged close to the grinding wheel component and is used to detect the size parameters of the groove on the side of the grinding wheel component to obtain the detection result; the groove is used to grind the edge of the silicon wafer; The control unit is electrically connected to the grinding wheel detection assembly, and is used to determine a first edge parameter of the silicon wafer obtained by grinding the grinding wheel assembly according to the detection result; and generating an indication signal according to the first edge data and the acquired target edge parameters of the silicon wafer to be ground, and sending the indication signal to the carrier platform so that the carrier platform adjusts the distance from the grinding wheel assembly; The control unit stores a target model, the input of the target model is the size parameter of the groove of the first grinding wheel, and the output of the target model is the second edge parameter of the silicon wafer obtained by grinding with the first grinding wheel.

2. The silicon wafer edge grinding device according to claim 1, characterized in that: The grinding wheel assembly comprises: Grinding wheels and drive shafts; The grinding wheel is nested in one end of the driving shaft and rotates under the driving of the driving shaft.

3. The silicon wafer edge grinding device according to claim 2, characterized in that: The grinding wheel detection component comprises: Support rod and detector; The detector is arranged at one end of the support rod and is used to detect the size parameters of the groove of the grinding wheel; The center of the detector is opposite to the center of the groove.

4. The silicon wafer edge grinding device according to claim 3, characterized in that: The detector comprises: A scanner, used to scan the dimension parameters of the groove; or, A plurality of uniformly arranged signal transceivers are provided, wherein the signal transceivers transmit a detection signal to the groove, receive the detection signal reflected by the groove, and determine the size parameter of the groove according to a first time of transmitting the detection signal and a second time of receiving the detection signal.

5. The silicon wafer edge grinding device according to claim 1, characterized in that: The edge parameters of the silicon wafer include: The chamfer width and diameter of the edge of the silicon wafer; The size parameters of the groove include: The depth of the groove and the chamfer angle of the groove.

6. A method for grinding a silicon wafer edge, characterized in that: The silicon wafer edge grinding device according to any one of claims 1 to 5 comprises: Obtaining target edge parameters of the silicon wafer to be polished; Detecting the size parameters of the groove of the grinding wheel assembly by the grinding wheel detection assembly to obtain a detection result, and sending the detection result to the control unit; The control unit determines an indication signal according to the detection result and the target edge parameter and sends the indication signal to the supporting platform; The bearing platform adjusts the distance between the bearing platform and the grinding wheel assembly according to the indication signal; The silicon wafer edge grinding device is operated to grind the silicon wafer to be ground.

7. The method for grinding the edge of a silicon wafer according to claim 6, characterized in that: The control unit determines an indication signal according to the detection result and the target edge parameter, including: The control unit inputs the detection result into the target model to obtain a predicted value; the predicted value is an edge parameter of a first silicon wafer obtained by grinding the silicon wafer to be ground by the grinding wheel assembly; Comparing the predicted value with the target edge parameter; In a case where the predicted value is greater than or equal to the target edge parameter, determining an indication signal for reducing the distance between the carrier platform and the grinding wheel assembly; The predicted values ​​include: the edge chamfer width and diameter of the first silicon wafer; The target edge parameters include: the chamfer width and diameter of the edge of the silicon wafer to be ground.

8. The method for grinding the edge of a silicon wafer according to claim 7, characterized in that: Applied to the silicon wafer edge grinding device as claimed in claim 2, the method further comprises: When the predicted value is less than the target edge parameter, the grinding wheel is replaced.

9. The method for grinding the edge of a silicon wafer according to claim 6, characterized in that: Obtain the target edge parameters of the silicon wafer to be polished, including: The target edge parameters of the silicon wafer to be polished are acquired by a silicon wafer surface sampler or a silicon wafer edge data collector.

10. A silicon wafer edge grinding device, characterized in that: include: An acquisition module, used to acquire target edge parameters of the silicon wafer to be polished; A detection module, used for detecting the size parameters of the groove of the grinding wheel assembly through the grinding wheel detection assembly, obtaining the detection result, and sending the detection result to the control unit; A determination module, configured for the control unit to determine an indication signal according to the detection result and the target edge parameter, and to send the indication signal to the carrier platform; An adjustment module, used for the bearing platform to adjust the distance between the bearing platform and the grinding wheel assembly according to the indication signal; The operation module is used to operate the silicon wafer edge grinding equipment to grind the silicon wafer to be ground.

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