A silicon wafer edge grinding apparatus, method and device

Abstract

This invention provides a silicon wafer edge grinding device, method, and apparatus. The device includes: a support stage, a grinding wheel assembly, a grinding wheel detection assembly, and a control unit. The support stage is used to support and fix the silicon wafer. The grinding wheel assembly is disposed near the support stage and is used to grind the edge of the silicon wafer. The grinding wheel detection assembly is disposed near the grinding wheel assembly and is used to detect the dimensional parameters of the groove on the side of the grinding wheel assembly to obtain a detection result. The groove is used to grind the edge of the silicon wafer. The control unit is electrically connected to the grinding wheel detection assembly and is used to determine the first edge parameter of the silicon wafer obtained after grinding by the grinding wheel assembly based on the detection result. It also generates an indication signal based on the first edge parameter and the obtained target edge parameter of the silicon wafer to be ground. The solution implemented in this invention solves the problem that random sampling of edge parameters of processed silicon wafers easily leads to waste of silicon wafers and missed detections.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a silicon wafer edge grinding device, method and apparatus. Background Technology

[0002] Existing edge polishing data control involves sampling finished silicon wafers using dedicated measuring equipment, followed by manual correction on the edge polishing equipment to control edge parameters. However, wafer measurements occur after processing; any abnormal edge parameters not only render the wafer unusable but also waste the time and material costs of processing it. Furthermore, the sampling method inevitably introduces omissions, failing to guarantee the pass rate of edge parameters for wafers reaching the customer. Summary of the Invention

[0003] This invention provides a silicon wafer edge grinding device, method, and apparatus to solve the problem in the prior art that the edge parameter sampling of processed silicon wafers easily leads to waste of silicon wafers and missed detections.

[0004] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0005] In a first aspect, embodiments of the present invention provide a silicon wafer edge polishing apparatus, comprising:

[0006] Support platform, grinding wheel assembly, grinding wheel detection assembly, and control unit;

[0007] The support platform is used to support and fix the silicon wafer;

[0008] The grinding wheel assembly is positioned close to the support platform and is used to grind the edges of the silicon wafer;

[0009] The grinding wheel detection component is positioned close to the grinding wheel assembly and is used to detect the dimensional parameters of the groove on the side of the grinding wheel assembly to obtain the detection result; the groove is used to grind the edge of the silicon wafer;

[0010] The control unit is electrically connected to the grinding wheel detection assembly and is used to determine the first edge parameter of the silicon wafer obtained by grinding by the grinding wheel assembly based on the detection result; and to generate an indication signal based on the first edge parameter and the target edge parameter of the silicon wafer to be ground, and send the indication signal to the support platform so that the support platform adjusts the distance between itself and the grinding wheel assembly.

[0011] The control unit stores a target model, the input of which is the size parameter of the groove of the first grinding wheel, and the output of which is the second edge parameter of the silicon wafer obtained by grinding with the first grinding wheel.

[0012] Further, the grinding wheel assembly includes:

[0013] Grinding wheel and drive shaft;

[0014] The grinding wheel is nested at one end of the drive shaft and rotates under the drive of the drive shaft.

[0015] Furthermore, the grinding wheel inspection assembly includes:

[0016] Support rod and detector;

[0017] The detector is disposed at one end of the support rod and is used to detect the dimensional parameters of the groove of the grinding wheel;

[0018] The center of the detector is directly opposite the center of the groove.

[0019] Furthermore, the detector includes:

[0020] A scanner is used to scan the dimensional parameters of the groove; or,

[0021] Multiple evenly arranged signal transceivers transmit detection signals to the groove and receive the detection signals reflected through the groove, and determine the size parameters of the groove based on a first time of transmitting the detection signal and a second time of receiving the detection signal.

[0022] Furthermore, the edge parameters of the silicon wafer include:

[0023] The edge chamfer width and diameter of the silicon wafer;

[0024] The dimensional parameters of the groove include:

[0025] The depth of the groove and the angle of the chamfer of the groove.

[0026] In a second aspect, embodiments of the present invention provide a silicon wafer edge polishing method, applied to the silicon wafer edge polishing equipment described above, comprising:

[0027] Obtain the target edge parameters of the silicon wafer to be polished;

[0028] The grinding wheel detection component detects the dimensional parameters of the groove of the grinding wheel assembly, obtains the detection result, and sends the detection result to the control unit.

[0029] The control unit determines an indication signal based on the detection result and the target edge parameters, and sends the indication signal to the support platform.

[0030] The support platform adjusts the distance between itself and the grinding wheel assembly according to the instruction signal;

[0031] The silicon wafer edge grinding equipment is used to grind the silicon wafer to be ground.

[0032] Further, the indication signal is determined, including:

[0033] The control unit inputs the detection result into the target model to obtain a predicted value; the predicted value is the edge parameter of the first silicon wafer obtained by the grinding wheel assembly grinding the silicon wafer to be ground.

[0034] The predicted value is compared with the target edge parameters;

[0035] If the predicted value is greater than or equal to the target edge parameter, an indication signal is determined to reduce the distance between the bearing platform and the grinding wheel assembly;

[0036] The predicted values ​​include: the chamfered area and diameter of the first silicon wafer;

[0037] The target edge parameters include: the chamfer area and diameter of the silicon wafer to be ground.

[0038] Furthermore, the silicon wafer edge grinding method further includes:

[0039] If the predicted value is less than the target edge parameter, the grinding wheel is replaced.

[0040] Further, the target edge parameters of the silicon wafer to be polished are obtained, including:

[0041] The target edge parameters of the silicon wafer to be ground are acquired by a silicon wafer surface sampler or a silicon wafer edge parameter collector.

[0042] Thirdly, embodiments of the present invention provide a silicon wafer edge polishing apparatus, comprising:

[0043] The acquisition module is used to acquire the target edge parameters of the silicon wafer to be polished;

[0044] The detection module is used to detect the dimensional parameters of the groove of the grinding wheel assembly through the grinding wheel detection component, obtain the detection result, and send the detection result to the control unit;

[0045] The determination module is used by the control unit to determine an indication signal based on the detection result and the target edge parameters, and to send the indication signal to the carrier stage;

[0046] An adjustment module is used to adjust the distance between the support platform and the grinding wheel assembly according to the indication signal;

[0047] The operation module is used to run the silicon wafer edge grinding equipment to grind the silicon wafer to be ground.

[0048] The beneficial effects of this invention are:

[0049] The silicon wafer edge grinding equipment of this invention, through the grinding wheel detection component, can measure the size parameters of the grooves in the grinding wheel assembly that grind the silicon wafer; then, based on the size parameters, it predicts the first edge parameters of the silicon wafer ground by the grinding wheel assembly using the target model stored in the control unit; and by comparing the first edge parameters with the obtained target edge parameters of the silicon wafer to be ground, it determines whether the grinding assembly is suitable for the silicon wafer to be ground, thereby adjusting the distance between the support stage and the grinding wheel assembly so that the grinding wheel assembly can grind a silicon wafer that meets the requirements. Attached Figure Description

[0050] Figure 1 This is a schematic diagram showing the structure of a silicon wafer edge polishing device according to an embodiment of the present invention;

[0051] Figure 2 This is a schematic diagram illustrating the detector of an embodiment of the present invention detecting the groove;

[0052] Figure 3 A schematic diagram illustrating the steps of a silicon wafer edge polishing method according to an embodiment of the present invention;

[0053] Figure 4 This is a schematic diagram showing the structure of the silicon wafer edge parameter acquisition device according to an embodiment of the present invention;

[0054] Figure 5 This is a schematic diagram of a silicon wafer edge grinding device according to an embodiment of the present invention. Detailed Implementation

[0055] To make the technical problems, technical solutions, and advantages of this invention clearer, a detailed description will be provided below in conjunction with the accompanying drawings and specific embodiments. In the following description, specific details such as particular configurations and components are provided merely to aid in a comprehensive understanding of the embodiments of this invention. Therefore, those skilled in the art should understand that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of this invention. Furthermore, for clarity and brevity, descriptions of known functions and structures have been omitted.

[0056] It should be understood that the phrase "one embodiment" or "an embodiment" throughout the specification means that a specific feature, structure, or characteristic related to the embodiment is included in at least one embodiment of the invention. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification do not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments.

[0057] This invention addresses the problem that existing technologies for edge parameter sampling of processed silicon wafers can easily lead to waste of silicon wafers and missed detections. It provides a silicon wafer edge grinding device, method, and apparatus.

[0058] This invention provides a silicon wafer edge polishing device, comprising:

[0059] Support platform, grinding wheel assembly, grinding wheel detection assembly, and control unit;

[0060] The support platform is used to support and fix silicon wafer A;

[0061] The grinding wheel assembly is positioned close to the support platform and is used to grind the edges of the silicon wafer;

[0062] The grinding wheel detection component is positioned close to the grinding wheel assembly and is used to detect the dimensional parameters of the groove on the side of the grinding wheel assembly to obtain the detection result; the groove is used to grind the edge of the silicon wafer;

[0063] The control unit is electrically connected to the grinding wheel detection assembly and is used to determine the first edge parameter of the silicon wafer obtained by grinding by the grinding wheel assembly based on the detection result; and to generate an indication signal based on the first edge parameter and the target edge parameter of the silicon wafer to be ground, and send the indication signal to the support platform so that the support platform adjusts the distance between itself and the grinding wheel assembly.

[0064] The control unit stores a target model, the input of which is the size parameter of the groove of the first grinding wheel, and the output of which is the second edge parameter of the silicon wafer obtained by grinding with the first grinding wheel.

[0065] Optionally, the edge parameters of the silicon wafer include:

[0066] The edge chamfer width and diameter of the silicon wafer;

[0067] The dimensional parameters of the groove include:

[0068] The depth of the groove and the angle of the chamfer of the groove.

[0069] It should be noted that different groove dimensions result in different edge parameters for the silicon wafers that can be processed (ground). For example, the chamfer angle determines the area of ​​the silicon wafer that can be processed (ground) from the groove, which is a fixed value. Therefore, the first edge parameter and the target edge parameter can be used to determine whether the grinding wheel assembly meets the grinding requirements of the silicon wafer to be ground.

[0070] In this embodiment of the invention, when the grinding wheel assembly meets the grinding requirements of the silicon wafer to be ground, the silicon wafer to be ground can be ground by adjusting the distance between the support stage and the grinding wheel assembly, and a silicon wafer that meets the edge requirements can be obtained.

[0071] If the grinding wheel assembly does not meet the grinding requirements of the silicon wafer to be ground, no matter how the distance between the support stage and the grinding wheel assembly is adjusted, the silicon wafer that meets the edge requirements cannot be ground by the grinding wheel assembly, and the grinding wheel assembly needs to be replaced.

[0072] The silicon wafer edge grinding equipment of this invention can determine the size parameters of the grooves for grinding the silicon wafer in the grinding wheel assembly through the grinding wheel detection component; then, based on the size parameters, it predicts the first edge parameters of the silicon wafer ground by the grinding wheel assembly through the target model stored in the control unit; and by comparing the first edge parameters with the obtained target edge parameters of the silicon wafer to be ground, it determines whether the grinding assembly is suitable for the silicon wafer to be ground, thereby adjusting the distance between the support stage and the grinding wheel assembly so that the grinding wheel assembly can grind the silicon wafer that meets the requirements.

[0073] like Figure 1 As shown, the grinding wheel assembly includes:

[0074] Grinding wheel 11 and drive shaft 12;

[0075] The grinding wheel 11 is nested at one end of the drive shaft 12 and rotates under the drive of the drive shaft 12.

[0076] Optionally, at least one of the grooves is provided on the side of the grinding wheel;

[0077] Each of the grooves is arranged around the grinding wheel.

[0078] Optionally, the dimensional parameters of each groove on the grinding wheel may be the same or different.

[0079] Optionally, the drive shaft can be moved axially relative to the support platform to change different grooves on the grinding wheel that grinds the silicon wafer on the support platform.

[0080] Optionally, the grinding wheel inspection assembly includes:

[0081] Support rod 21 and detector 22;

[0082] The detector 22 is disposed at one end of the support rod 21 and is used to detect the dimensional parameters of the groove 13 of the grinding wheel 11;

[0083] The center B of the detector 22 is directly opposite the center C of the groove 13.

[0084] like Figure 2 As shown, the detector 22 includes:

[0085] A scanner is used to scan the dimensional parameters of the groove 13; or,

[0086] Multiple evenly arranged signal transceivers transmit detection signals to the groove 13 and receive the detection signals reflected by the groove 13, and determine the size parameters of the groove 13 based on the first time of transmitting the detection signal and the second time of receiving the detection signal.

[0087] Optionally, the signal transceiver includes:

[0088] Optical transceiver and acoustic transceiver.

[0089] In this embodiment of the invention, when the detector is the scanner, the detector directly scans the groove to obtain the size parameters of the groove.

[0090] In this embodiment of the invention, when the detector is the signal transceiver, the size parameters of the groove are determined based on the first time, the second time, and the propagation speed of the detection signal.

[0091] The silicon wafer edge grinding device of this invention can detect the size parameters of the groove of the grinding wheel through the grinding wheel detection component, thereby enabling the control unit to predict the first edge parameter based on the size parameters of the groove.

[0092] like Figure 3 As shown, this embodiment of the invention also provides a silicon wafer edge polishing method, applied to the silicon wafer edge polishing equipment described above, comprising the following steps:

[0093] Step 301: Obtain the target edge parameters of the silicon wafer to be polished;

[0094] Step 302: The size parameters of the groove of the grinding wheel assembly are detected by the grinding wheel detection assembly to obtain the detection result, and the detection result is sent to the control unit;

[0095] Step 303: The control unit determines an indication signal based on the detection result and the target edge parameters, and sends the indication signal to the support platform;

[0096] Step 304: The support platform adjusts the distance between itself and the grinding wheel assembly according to the instruction signal;

[0097] Step 305: Run the silicon wafer edge grinding equipment to grind the silicon wafer to be ground.

[0098] The silicon wafer edge grinding method of this invention uses the grinding wheel detection component to detect the size parameters of the grooves in the grinding wheel component for grinding the silicon wafer. Then, based on the size parameters, the first edge parameters of the silicon wafer ground by the grinding wheel component are predicted using the target model stored in the control unit. By comparing the first edge parameters with the obtained target edge parameters of the silicon wafer to be ground, it is determined whether the grinding component is suitable for the silicon wafer to be ground, thereby adjusting the distance between the support stage and the grinding wheel component so that the grinding wheel component can grind a silicon wafer that meets the requirements.

[0099] Optionally, the control unit determines an indication signal based on the detection result and the target edge parameters, including:

[0100] The control unit inputs the detection result into the target model to obtain a predicted value; the predicted value is the edge parameter of the first silicon wafer obtained by the grinding wheel assembly grinding the silicon wafer to be ground.

[0101] The predicted value is compared with the target edge parameters;

[0102] If the predicted value is greater than or equal to the target edge parameter, an indication signal is determined to reduce the distance between the bearing platform and the grinding wheel assembly;

[0103] The predicted values ​​include: the chamfered area and diameter of the first silicon wafer;

[0104] The target edge parameters include: the chamfer area and diameter of the silicon wafer to be ground.

[0105] It should be noted that different groove dimensions result in different edge parameters for the silicon wafers that can be processed (ground). For example, the chamfer angle of the groove determines the area of ​​the silicon wafer that can be processed (ground). Therefore, the first edge parameter and the target edge parameter can be used to determine whether the grinding wheel assembly meets the grinding requirements of the silicon wafer to be ground.

[0106] In this embodiment of the invention, when the grinding wheel assembly meets the grinding requirements of the silicon wafer to be ground, the silicon wafer to be ground can be ground by adjusting the distance between the support stage and the grinding wheel assembly, and a silicon wafer that meets the edge requirements can be obtained.

[0107] If the grinding wheel assembly does not meet the grinding requirements of the silicon wafer to be ground, no matter how the distance between the support stage and the grinding wheel assembly is adjusted, the silicon wafer that meets the edge requirements cannot be ground by the grinding wheel assembly, and the grinding wheel assembly needs to be replaced.

[0108] Optionally, the silicon wafer edge grinding method further includes:

[0109] If the predicted value is less than the target edge parameter, the grinding wheel is replaced.

[0110] Optionally, replacing the grinding wheel includes:

[0111] Replace the grinding wheel; or,

[0112] Control the drive shaft to move along its axial direction, changing the first groove on the grinding wheel to a second groove.

[0113] Optionally, the grinding wheel is provided with a plurality of grooves, and the dimensional parameters of each groove are the same or different.

[0114] It should be noted that when all the grooves on the grinding wheel have the same size parameters, replacing the grinding wheel means replacing it with another grinding wheel that has different groove size parameters.

[0115] When the dimensional parameters of the grooves on the grinding wheel are different, replacing the grinding wheel includes:

[0116] Control the drive shaft to move along its axial direction, changing the first groove on the grinding wheel to a second groove.

[0117] The wafer edge grinding method of this invention can make the ground silicon wafer meet the edge parameter requirements by replacing the grinding wheel when the grinding wheel is not suitable for the current grinding requirements of the silicon wafer.

[0118] Optionally, the target edge parameters of the silicon wafer to be polished are obtained, including:

[0119] The target edge parameters of the silicon wafer to be ground are acquired by a silicon wafer surface sampler or a silicon wafer edge parameter collector.

[0120] like Figure 4 As shown, the silicon wafer edge parameter acquisition device includes:

[0121] First collector 31 and second collector 32;

[0122] The first collector 31 and the second collector 32 are disposed opposite to each other on both sides of the silicon wafer, and respectively detect the edges on both sides of the silicon wafer to obtain the target edge parameters.

[0123] like Figure 5 As shown, this embodiment of the invention also provides a silicon wafer edge polishing apparatus 500, comprising:

[0124] The acquisition module 501 is used to acquire the target edge parameters of the silicon wafer to be polished;

[0125] The detection module 502 is used to detect the dimensional parameters of the groove of the grinding wheel assembly through the grinding wheel detection component, obtain the detection result, and send the detection result to the control unit;

[0126] The determination module 503 is used by the control unit to determine an indication signal based on the detection result and the target edge parameters, and to send the indication signal to the carrier stage;

[0127] Adjustment module 504 is used to adjust the distance between the support platform and the grinding wheel assembly according to the indication signal;

[0128] The operation module 505 is used to operate the silicon wafer edge grinding equipment to grind the silicon wafer to be ground.

[0129] The silicon wafer edge grinding apparatus of this invention, through the grinding wheel detection component, can detect the size parameters of the grooves in the grinding wheel assembly for grinding the silicon wafer; then, based on the size parameters, it predicts the first edge parameters of the silicon wafer ground by the grinding wheel assembly using the target model stored in the control unit; and by comparing the first edge parameters with the obtained target edge parameters of the silicon wafer to be ground, it determines whether the grinding assembly is suitable for the silicon wafer to be ground, thereby adjusting the distance between the support stage and the grinding wheel assembly so that the grinding wheel assembly can grind a silicon wafer that meets the requirements.

[0130] Optionally, the determining module is further configured to:

[0131] The control unit inputs the detection result into the target model to obtain a predicted value; the predicted value is the edge parameter of the first silicon wafer obtained by the grinding wheel assembly grinding the silicon wafer to be ground.

[0132] The predicted value is compared with the target edge parameters;

[0133] If the predicted value is greater than or equal to the target edge parameter, an indication signal is determined to reduce the distance between the bearing platform and the grinding wheel assembly;

[0134] The predicted values ​​include: the chamfered area and diameter of the first silicon wafer;

[0135] The target edge parameters include: the chamfer area and diameter of the silicon wafer to be ground.

[0136] Optionally, the acquisition module is further configured to:

[0137] The target edge parameters of the silicon wafer to be ground are acquired by a silicon wafer surface sampler or a silicon wafer edge parameter collector.

[0138] In addition, specific embodiments of the present invention also provide a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the aforementioned silicon wafer edge polishing method. This achieves the same technical effect, and to avoid repetition, will not be described further here.

[0139] This application also provides a computer program product, including computer instructions. When executed by a processor, these computer instructions implement the various processes of the above-described silicon wafer edge polishing method embodiments and achieve the same technical effects. To avoid repetition, they will not be described again here.

[0140] The above describes the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications are also within the scope of protection of the present invention.

Claims

1. A silicon wafer edge grinding apparatus, characterized by, include: Support platform, grinding wheel assembly, grinding wheel detection assembly, and control unit; The support platform is used to support and fix the silicon wafer; The grinding wheel assembly is positioned close to the support platform and is used to grind the edges of the silicon wafer; The grinding wheel detection component is positioned close to the grinding wheel assembly and is used to detect the dimensional parameters of the groove on the side of the grinding wheel assembly to obtain the detection result; the groove is used to grind the edge of the silicon wafer; The control unit is electrically connected to the grinding wheel detection assembly and is used to determine the first edge parameters of the silicon wafer obtained by grinding through the grinding wheel assembly based on the detection results. And based on the first edge parameter and the obtained target edge parameter of the silicon wafer to be ground, an indication signal is generated and sent to the support platform so that the support platform adjusts the distance between itself and the grinding wheel assembly; The control unit stores a target model, the input of which is the size parameter of the groove on the side of the grinding wheel assembly, and the output of which is the first edge parameter. The edge parameters include: the chamfer area and diameter of the silicon wafer; The dimensional parameters of the groove include: the depth of the groove and the angle of the chamfer of the groove; The control unit inputs the detection result into the target model to obtain a predicted value; the predicted value is the first edge parameter. The predicted value is compared with the target edge parameters; If the predicted value is greater than or equal to the target edge parameter, an indication signal is determined to reduce the distance between the bearing platform and the grinding wheel assembly.

2. The silicon wafer edge grinding equipment according to claim 1, characterized in that, The grinding wheel assembly includes: Grinding wheel and drive shaft; The grinding wheel is nested at one end of the drive shaft and rotates under the drive of the drive shaft.

3. The apparatus of claim 2, wherein the at least one of the plurality of abrasive elements is a diamond abrasive element. The grinding wheel inspection component includes: Support rods and detectors; The detector is disposed at one end of the support rod and is used to detect the dimensional parameters of the groove of the grinding wheel; The center of the detector is directly opposite the center of the groove.

4. The apparatus of claim 3, wherein the at least one of the plurality of abrasive elements is a diamond abrasive element. The detector includes: A scanner is used to scan the dimensional parameters of the groove; or, Multiple evenly arranged signal transceivers transmit detection signals to the groove and receive the detection signals reflected through the groove, and determine the size parameters of the groove based on a first time of transmitting the detection signal and a second time of receiving the detection signal.

5. A method of edge grinding a silicon wafer, the method comprising: An apparatus for grinding silicon wafer edges as described in any one of claims 1 to 4, comprising: Obtain the target edge parameters of the silicon wafer to be polished; The grinding wheel detection component detects the dimensional parameters of the groove of the grinding wheel assembly, obtains the detection result, and sends the detection result to the control unit. The control unit determines an indication signal based on the detection result and the target edge parameters, and sends the indication signal to the support platform. The support platform adjusts the distance between itself and the grinding wheel assembly according to the instruction signal; The silicon wafer edge polishing equipment is used to polish the silicon wafer to be polished. The dimensional parameters of the groove include: the depth of the groove and the angle of the chamfer of the groove; The control unit determines the indication signal based on the detection result and the target edge parameters, including: The control unit inputs the detection result into the target model to obtain a predicted value; the predicted value is a first edge parameter obtained by the grinding wheel assembly grinding the silicon wafer to be ground; the edge parameter includes: the edge chamfer area and diameter of the silicon wafer; The predicted value is compared with the target edge parameters; If the predicted value is greater than or equal to the target edge parameter, an indication signal is determined to reduce the distance between the bearing platform and the grinding wheel assembly.

6. The method of claim 5, wherein the step of grinding the edge of the silicon wafer is performed by a grinding wheel having a diameter of 300 mm or less. The grinding wheel assembly includes a grinding wheel and a drive shaft, and the method further includes: If the predicted value is less than the target edge parameter, the grinding wheel is replaced.

7. The method of claim 5, wherein the step of grinding the edge of the silicon wafer is performed by a grinding wheel having a diameter of 300 mm or less. Obtain the target edge parameters of the silicon wafer to be ground, including: The target edge parameters of the silicon wafer to be ground are acquired by a silicon wafer surface sampler or a silicon wafer edge parameter collector.

8. A silicon wafer edge grinding apparatus, characterized by comprising: include: The acquisition module is used to acquire the target edge parameters of the silicon wafer to be polished; The detection module is used to detect the dimensional parameters of the groove on the side of the grinding wheel assembly through the grinding wheel detection component, obtain the detection result, and send the detection result to the control unit; the control unit stores a target model, the input of the target model is the dimensional parameters of the groove on the side of the grinding wheel assembly, and the output of the target model is the first edge parameter obtained by the grinding wheel assembly grinding the silicon wafer to be ground; The determination module is used by the control unit to determine an indication signal based on the detection result and the target edge parameters, and to send the indication signal to the carrier stage; An adjustment module is used to adjust the distance between the support platform and the grinding wheel assembly according to the indication signal; The operation module is used to run the silicon wafer edge polishing equipment to polish the silicon wafer to be polished; The edge parameters of the silicon wafer include: the chamfer area and diameter of the edge of the silicon wafer; The dimensional parameters of the groove include: the depth of the groove and the angle of the chamfer of the groove; The determining module is further configured to have the control unit input the detection result into the target model to obtain a predicted value; the predicted value is the first edge parameter. The predicted value is compared with the target edge parameters; If the predicted value is greater than or equal to the target edge parameter, an indication signal is determined to reduce the distance between the bearing platform and the grinding wheel assembly.

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