Extreme ultraviolet lithography projection exposure optical system and method

Abstract

The application relates to the field of projection optical technology, in particular to an extreme ultraviolet lithography projection exposure optical system and method, and provides an ultraviolet lithography projection exposure optical system which comprises a light field uniformity adjusting module, the light field uniformity adjusting module is respectively connected with a light beam generating module and a light beam shaping module in signal connection; the light field uniformity adjusting module is used for acquiring extreme ultraviolet light beam intensity distribution data output by the light beam shaping module; is also used for adjusting the output power of the light beam generating module according to the light intensity distribution data, so that the lowest light intensity in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment is not lower than a target light intensity; and is also used for adjusting the light transmittance of a gradual attenuation piece in the extreme ultraviolet light beam shaping module according to the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment, so that the light intensity difference of any two positions in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after transmittance adjustment does not exceed a difference limited range.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of projection optics, and in particular to an extreme ultraviolet lithography projection exposure optical system and method. BACKGROUND

[0002] In the process of extreme ultraviolet lithography (EUVL), the uniformity of the light field is one of the core requirements for achieving high-precision chip manufacturing. The wavelength of the EUV lithography light source is extremely short (about 13.5 nanometers), which enables it to achieve a pattern resolution of 7 nanometers and below. However, EUV light is extremely susceptible to attenuation when propagating in air and is also extremely sensitive to environmental factors such as temperature changes, vibrations, and air pressure fluctuations, resulting in a light field that is not uniform enough in actual applications, which can significantly affect the precision of the lithography pattern.

[0003] In actual manufacturing, insufficient light field uniformity not only affects the yield of chip manufacturing, but also increases the scrap rate and rework cost. Due to the high uniformity requirement of the light field in nanoscale chip manufacturing, the output of the light source of the traditional EUVL system is difficult to adjust in real time, and the dynamic optimization capability of the light field distribution is weak. This limitation makes it difficult to cope with real-time fluctuations in the light field during actual projection, affecting the exposure precision and clarity of the pattern, ultimately leading to a decrease in the yield and an increase in the manufacturing cost. SUMMARY

[0004] The present application provides an extreme ultraviolet lithography projection exposure optical system and method, aiming to solve the problem of light field uniformity in the process of extreme ultraviolet lithography projection exposure.

[0005] In a first aspect, the present application provides an ultraviolet lithography projection exposure optical system, which includes a light beam generation module, a light beam shaping module, and a light beam projection module. The light beam generation module is used to generate an extreme ultraviolet light beam. The light beam shaping module is used to adjust the extreme ultraviolet light beam. The light beam projection module is used to project the adjusted extreme ultraviolet light beam onto a target surface. Further, the present application provides an ultraviolet lithography projection exposure optical system, which further includes a light field uniformity adjustment module. The light field uniformity adjustment module is signal connected with the light beam generation module and the light beam shaping module, respectively. The light field uniformity adjustment module is used to obtain the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module. The light field uniformity adjustment module is also used to adjust the output power of the light beam generation module according to the light intensity distribution data, so that the lowest light intensity in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment is not lower than the target light intensity. The light field uniformity adjustment module is also used to adjust the light transmission rate of the graded attenuation piece in the extreme ultraviolet light beam shaping module according to the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment, so that the light intensity difference between any two positions in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after transmission rate adjustment does not exceed the difference value limit range.

[0006] Optionally, the light field uniformity adjustment module comprises a light intensity distribution data acquisition submodule and a light intensity uniformity adjustment submodule; the light intensity distribution data acquisition submodule is arranged on the light output side of the light beam shaping module, and is configured to acquire light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module, the light intensity distribution data being the light intensity of the extreme ultraviolet light beam at each position in the projection plane perpendicular to the light path direction; the light intensity uniformity adjustment submodule is in signal connection with the light beam generation module, and is configured to adjust the output power of the light beam generation module according to the light intensity distribution data of the extreme ultraviolet light beam, so that the lowest light intensity in the light intensity distribution data acquired after the power adjustment is not lower than a target light intensity; the light intensity uniformity adjustment submodule is in signal connection with the light beam shaping module, and is configured to adjust the light transmittance of the graded attenuation piece in the extreme ultraviolet light beam shaping module according to the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after the power adjustment, so that the light intensity difference between any two positions in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after the transmittance adjustment is not more than a difference limit range.

[0007] Optionally, the light intensity distribution data acquisition submodule is composed of a plurality of photoelectric detectors arranged in an area array, and any photoelectric detector is configured to acquire a local light intensity value at the position thereof.

[0008] Optionally, the light beam shaping module comprises a plurality of graded attenuation pieces, any one of the graded attenuation pieces is arranged on the light output side of the light beam generation module and is perpendicular to the light path direction, and is configured to adjust the light transmittance of the extreme ultraviolet light beam; the plurality of photoelectric detectors correspond to the plurality of graded attenuation pieces one by one, and any graded attenuation piece is configured to adjust the light transmittance of the local light beam acquired by the corresponding photoelectric detector.

[0009] In a second aspect, the present application provides an extreme ultraviolet lithography projection exposure method suitable for an extreme ultraviolet lithography projection exposure optical system, comprising the following steps: the light beam generation module generates an extreme ultraviolet light beam; the light beam shaping module adjusts the extreme ultraviolet light beam; the light field uniformity adjustment module acquires light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module; the light field uniformity adjustment module adjusts the output power of the light beam generation module according to the light intensity distribution data, so that the lowest light intensity in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after the power adjustment is not lower than a target light intensity; the light field uniformity adjustment module adjusts the light transmittance of the graded attenuation piece in the extreme ultraviolet light beam shaping module according to the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after the power adjustment, so that the light intensity difference between any two positions in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after the transmittance adjustment is not more than a difference limit range; and the light beam projection module projects the extreme ultraviolet light beam output by the light beam shaping module after the transmittance adjustment to a target surface.

[0010] Optionally, the adjusting the output power of the light beam generating module according to the light intensity distribution data, so that the lowest light intensity in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment is not lower than the target light intensity, comprises the following steps: extracting the lowest light intensity in the light intensity distribution data; setting the target light intensity, and comparing the numerical values of the lowest light intensity and the target light intensity; adjusting the output power of the light beam generating module according to the comparison result of the numerical values of the lowest light intensity and the target light intensity.

[0011] Optionally, the output power of the light beam generating module satisfies the following adjustment rule: if the lowest light intensity is lower than the target light intensity, increasing the output power of the extreme ultraviolet light source module until the lowest light intensity in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment is not lower than the target light intensity; if the lowest light intensity is not lower than the target light intensity, maintaining the current output power of the extreme ultraviolet light source module.

[0012] Optionally, the adjusting the transmittance of the graded attenuation piece in the extreme ultraviolet light beam shaping module according to the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment, so that the light intensity difference between any two positions in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after transmittance adjustment does not exceed the difference value limit range, comprises the following steps: obtaining a uniform reference light intensity based on the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment, the uniform reference light intensity being a reference light intensity for measuring the uniformity of light intensity distribution; obtaining the difference value between each light intensity in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment and the uniform reference light intensity; setting the difference value limit range, and setting the light intensity whose difference value with the uniform reference light intensity does not satisfy the difference value limit range as an abnormal light intensity; adjusting the transmittance of the graded attenuation piece corresponding to each abnormal light intensity position, so that the light intensity difference between any two positions in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after transmittance adjustment does not exceed the difference value limit range.

[0013] Optionally, the transmittance of any graded attenuation piece in the extreme ultraviolet light beam shaping module satisfies the following rule: if the difference value between the abnormal light intensity and the uniform reference light intensity is lower than any light intensity within the difference value limit range, increasing the transmittance of the graded attenuation piece corresponding to the abnormal light intensity position; if the difference value between the abnormal light intensity and the uniform reference light intensity is higher than any light intensity within the difference value limit range, decreasing the transmittance of the graded attenuation piece corresponding to the abnormal light intensity position.

[0014] The extreme ultraviolet lithography projection exposure optical system and method provided by this invention have the following advantages: by acquiring and analyzing light intensity distribution data, adjusting the beam generation and shaping modules, and gradually reducing light intensity differences, the invention achieves light field uniformity to ensure the exposure accuracy and clarity of the pattern, thereby improving the dynamic adjustment capability of the light field during the lithography process. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the extreme ultraviolet lithography projection exposure optical system module provided in an embodiment of the present invention;

[0016] Figure 2 This is a schematic diagram of the optical field uniformity adjustment module provided in an embodiment of the present invention;

[0017] Figure 3 This is a flowchart of the extreme ultraviolet lithography projection exposure method provided in an embodiment of the present invention;

[0018] Figure 4 This is a schematic diagram of transmittance adjustment provided in an embodiment of the present invention. Detailed Implementation

[0019] In the following description, specific details such as particular system architectures and technologies are set forth for illustrative purposes and not limiting, in order to provide a thorough understanding of the embodiments of this application.

[0020] Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings and other implementation methods can be obtained based on these drawings without creative effort.

[0021] In one embodiment, see Figure 1 , Figure 1 This is a schematic diagram of the extreme ultraviolet lithography projection exposure optical system module provided in an embodiment of the present invention.

[0022] like Figure 1 As shown, the extreme ultraviolet lithography projection exposure optical system provided by the present invention includes a beam generation module, a beam shaping module, and a beam projection module; further, the extreme ultraviolet lithography projection exposure optical system also includes a light field uniformity adjustment module for adjusting the light field uniformity.

[0023] In this embodiment, the beam generation module is used to generate an extreme ultraviolet (EUV) beam. It is understood that the EUV beam generated by this invention has a wavelength range of 10 nanometers to 121 nanometers.

[0024] Further, the light beam generating module generates the extreme ultraviolet light beam by using a laser plasma (LPP) technology, i.e., using a high-power laser to hit a tin droplet target to make the tin droplet target plasma to generate the extreme ultraviolet light beam.

[0025] In the embodiment, the light beam shaping module is configured to adjust the extreme ultraviolet light beam, and further, the light beam shaping module comprises a plurality of gradient attenuation plates, any one of which is arranged on the light output side of the light beam generating module and perpendicular to the light path direction, and is configured to adjust the light transmittance of the extreme ultraviolet light beam.

[0026] Further, the light beam shaping module adjusts the extreme ultraviolet light beam generated by the light beam generating module through focusing, collimation, uniformization, size adjustment and other operations, so as to realize uniform distribution and size optimization of the light field, and ensure that the light beam reaches the predetermined light intensity uniformity and suitable size range in the projection exposure process.

[0027] In the embodiment, the light beam projection module is configured to project the adjusted extreme ultraviolet light beam to a target surface, and further, the target surface is a silicon wafer surface. In other one or some embodiments, the target surface can also be a glass, sapphire, metal film or other substrate surface.

[0028] In the embodiment, the light field uniformity adjustment module is signal connected with the light beam generating module and the light beam shaping module respectively.

[0029] Further, the light field uniformity adjustment module is configured to obtain the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module.

[0030] Specifically, the extreme ultraviolet light beam intensity distribution data is the light intensity of the extreme ultraviolet light beam at each position in the projection plane perpendicular to the light path direction.

[0031] Further, the light field uniformity adjustment module is further configured to adjust the output power of the light beam generating module according to the light intensity distribution data, so that the lowest light intensity in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment is not lower than the target light intensity.

[0032] It can be understood that the target light intensity is a pre-set light intensity standard determined according to the specific requirements of the photolithography process, the characteristics of the photoresist and the accuracy of the target pattern, so as to ensure that the light intensity of the extreme ultraviolet light beam at each position in the projection section is sufficient for the subsequent photolithography process.

[0033] Further, the light field uniformity adjustment module is further configured to adjust the transmittance of the gradually changing attenuation sheet in the extreme ultraviolet beam shaping module according to the extreme ultraviolet beam intensity distribution data output by the extreme ultraviolet beam shaping module after the power adjustment, so that the intensity difference of any two positions in the extreme ultraviolet beam intensity distribution data output by the beam shaping module after the transmittance adjustment does not exceed the difference limit range.

[0034] It can be understood that the difference limit range is a pre-determined light intensity difference limit range, which is used to measure whether the uniformity of the adjusted extreme ultraviolet beam intensity distribution meets the requirements, and is usually determined according to the accuracy requirement of the photolithography process, the sensitivity of the photoresist to light intensity change, etc.

[0035] In one embodiment, please refer to Figure 2 , Figure 2 The light field uniformity adjustment module provided by the embodiment of the present application is shown in the composition diagram.

[0036] As Figure 2 shown, the light field uniformity adjustment module includes an intensity distribution data acquisition sub-module and an intensity uniformity adjustment sub-module.

[0037] Further, the intensity distribution data acquisition sub-module is arranged on the light output side of the beam shaping module, and is configured to acquire the extreme ultraviolet beam intensity distribution data output by the beam shaping module.

[0038] In the embodiment, the intensity distribution data acquisition sub-module is composed of a plurality of photoelectric detectors arranged in an area array, and any photoelectric detector is configured to acquire the local intensity value at the position thereof.

[0039] Further, in order to realize the transmittance adjustment of the extreme ultraviolet beam at different positions, the plurality of photoelectric detectors are one-to-one corresponding to the plurality of gradually changing attenuation sheets, and any gradually changing attenuation sheet is configured to adjust the transmittance of the local beam acquired by the corresponding photoelectric detector.

[0040] Please refer to Figure 3 , Figure 3 The transmittance adjustment diagram provided by the embodiment of the present application is shown. As Figure 3 shown, the intensity distribution data acquisition sub-module provided by the embodiment includes four photoelectric detectors arranged in an area array on the light output side of the beam shaping module; the beam shaping module provided by the embodiment includes four gradually changing attenuation sheets, and any gradually changing attenuation sheet is arranged on the light output side of the beam shaping module and perpendicular to the light path direction.

[0041] Further, the first gradient attenuation sheet A1 corresponds to the first photodetector C1, and the first gradient attenuation sheet A1 is used to adjust the light transmittance of the local light beam collected by the first photodetector C1; the second gradient attenuation sheet A2 corresponds to the second photodetector C2, and the second gradient attenuation sheet A2 is used to adjust the light transmittance of the local light beam collected by the second photodetector C2; the third gradient attenuation sheet A3 corresponds to the third photodetector C3, and the third gradient attenuation sheet A3 is used to adjust the light transmittance of the local light beam collected by the third photodetector C3; and the fourth gradient attenuation sheet A4 corresponds to the fourth photodetector C4, and the fourth gradient attenuation sheet A4 is used to adjust the light transmittance of the local light beam collected by the fourth photodetector C4.

[0042] It should be noted that the projection planes of any two gradient attenuation sheets in the light path direction are the same, any gradient attenuation sheet includes a first region and a second region, the transmittance of the first region is adjustable, the local light beam passing through the first region is received by the corresponding photodetector, the transmittance of the second region is fixed, and the transmittance of the second region of any two gradient attenuation sheets is the same. Further, the transmittance adjustment of any first region can be realized by replacing the gradient attenuation sheet with a first region having different thickness.

[0043] Further, the light intensity uniformity adjustment sub-module is signal connected with the light beam generation module, and is used to adjust the output power of the light beam generation module according to the extreme ultraviolet light beam light intensity distribution data, so that the lowest light intensity in the light intensity distribution data obtained after power adjustment is not lower than the target light intensity.

[0044] Further, the light intensity uniformity adjustment sub-module is signal connected with the light beam shaping module, and is used to adjust the light transmittance of the gradient attenuation sheet in the extreme ultraviolet light beam shaping module according to the extreme ultraviolet light beam light intensity distribution data output by the light beam shaping module after power adjustment, so that the light intensity difference of any two positions in the extreme ultraviolet light beam light intensity distribution data output by the light beam shaping module after transmittance adjustment does not exceed the difference value limited range.

[0045] In one embodiment, please refer to Figure 4 , Figure 4 The extreme ultraviolet lithography projection exposure method provided by the embodiment of the present application is based on the extreme ultraviolet lithography projection exposure optical system provided by the present application.

[0046] As Figure 3 shown, the extreme ultraviolet lithography projection exposure method provided by the embodiment of the present application is based on the extreme ultraviolet lithography projection exposure optical system provided by the present application, and includes the following steps:

[0047] S01, the light beam generation module generates an extreme ultraviolet light beam.

[0048] Further, the light beam generating module generates the extreme ultraviolet light beam by laser plasma technology, which is a prior art and will not be described here.

[0049] S02, the light beam shaping module adjusts the extreme ultraviolet light beam.

[0050] Further, in the process of adjusting the extreme ultraviolet light beam by the light beam shaping module, the focusing operation, collimation operation, and size adjustment operation are prior arts and will not be described here.

[0051] In this embodiment, the light beam shaping module adjusts the transmittance of the gradient attenuation piece to make the intensity distribution of the light beam more uniform in the entire propagation path.

[0052] S03, the light field uniformity adjustment module obtains the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module.

[0053] It can be understood that the light intensity distribution data of the extreme ultraviolet light beam refers to the light intensity data set of each position on the projection cross section perpendicular to the light path direction of the extreme ultraviolet light beam after the adjustment of the extreme ultraviolet light beam shaping module.

[0054] S04, the light field uniformity adjustment module adjusts the output power of the light beam generating module according to the light intensity distribution data, so that the lowest light intensity in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment is not lower than the target light intensity.

[0055] Further, step S04 specifically includes the following steps:

[0056] S041, extracting the lowest light intensity in the light intensity distribution data.

[0057] S042, setting a target light intensity and comparing the numerical values of the lowest light intensity and the target light intensity.

[0058] In this embodiment, the target light intensity is determined by relevant staff according to the specific requirements of the lithography process, the characteristics of the photoresist, and the precision of the target pattern, etc.

[0059] S043, adjusting the output power of the light beam generating module according to the comparison result of the numerical values of the lowest light intensity and the target light intensity.

[0060] Further, the output power of the light beam generating module satisfies the following adjustment rule:

[0061] If the minimum light intensity is lower than the target light intensity, increase the output power of the extreme ultraviolet light source module until the minimum light intensity in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after adjustment is not lower than the target light intensity; if the minimum light intensity is not lower than the target light intensity, the current output power of the extreme ultraviolet light source module is maintained.

[0062] S05, the light field uniformity adjustment module adjusts the light transmission rate of the graded attenuation piece in the extreme ultraviolet light beam shaping module according to the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment, so that the light intensity difference between any two positions in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after transmittance adjustment does not exceed the difference value limit range.

[0063] Further, step S05 specifically includes the following steps:

[0064] S051, based on the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment, a uniform reference light intensity is obtained.

[0065] In this embodiment, the uniform reference light intensity is a reference light intensity for measuring the uniformity of light intensity distribution, which satisfies the following generation model: wherein I c represents the uniform reference light intensity, represents the light intensity in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment, I which reaches the maximum value, I represents the data set corresponding to the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment, i represents the light intensity number, j represents the light intensity number, I i represents the i-th light intensity in the data set, I j represents the j-th light intensity in the data set.

[0066] S052, the difference between each light intensity in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after power adjustment and the uniform reference light intensity is obtained respectively.

[0067] S053, a difference value limit range is set, and the light intensity whose difference from the uniform reference light intensity does not satisfy the difference value limit range is set as an abnormal light intensity.

[0068] In this embodiment, the difference value limit range is determined by relevant staff according to related conditions such as the accuracy requirement of the lithography process, the sensitivity of the photoresist to light intensity change, etc.

[0069] S054, the light transmission rate of the graded attenuation piece corresponding to each abnormal light intensity position is adjusted respectively, so that the light intensity difference between any two positions in the light intensity distribution data of the extreme ultraviolet light beam output by the light beam shaping module after transmittance adjustment does not exceed the difference value limit range.

[0070] S06、the light beam projection module projects the extreme ultraviolet light beam output by the light beam shaping module after the transmittance adjustment to a target surface.

[0071] In the above embodiments, the description of each embodiment has its own focus, and the parts not described or recorded in detail in a certain embodiment can be referred to the related description of other embodiments.

[0072] It should be noted that the above embodiments can be freely combined as needed. The above is only the preferred embodiment of the present application; it should be noted that for ordinary skilled in the art, without departing from the principles of the present application, a number of improvements and refinements can also be considered as the protection scope of the present application.

Claims

1. An extreme ultraviolet lithography projection exposure optical system comprising a light beam generating module for generating an extreme ultraviolet light beam, a light beam shaping module for adjusting the extreme ultraviolet light beam, and a light beam projection module for projecting the adjusted extreme ultraviolet light beam to a target surface, characterized in that, Also comprising: a light field uniformity adjustment module, which is signal connected with the light beam generation module and the light beam shaping module respectively; the light field uniformity adjustment module is used for acquiring the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module; the light field uniformity adjustment module is also used for adjusting the output power of the light beam generation module according to the light intensity distribution data, so that the lowest light intensity in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment is not lower than the target light intensity; the light field uniformity adjustment module is also used for adjusting the light transmittance of the gradual attenuation piece in the extreme ultraviolet light beam shaping module according to the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment, so that the light intensity difference between any two positions in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after transmittance adjustment does not exceed the difference value limit range.

2. The extreme ultraviolet lithography projection exposure optical system according to claim 1, characterized by, The light field uniformity adjustment module comprises: a light intensity distribution data acquisition submodule and a light intensity uniformity adjustment submodule: the light intensity distribution data acquisition submodule is arranged on the light output side of the light beam shaping module and is used for acquiring the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module, the extreme ultraviolet light beam intensity distribution data being the light intensity at each position of the extreme ultraviolet light beam in the projection plane perpendicular to the light path direction; the light intensity uniformity adjustment submodule is signal connected with the light beam generation module and is used for adjusting the output power of the light beam generation module according to the extreme ultraviolet light beam intensity distribution data, so that the lowest light intensity in the light intensity distribution data acquired after power adjustment is not lower than the target light intensity, the light intensity uniformity adjustment submodule is signal connected with the light beam shaping module and is used for adjusting the light transmittance of the gradual attenuation piece in the extreme ultraviolet light beam shaping module according to the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment, so that the light intensity difference between any two positions in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after transmittance adjustment does not exceed the difference value limit range.

3. The extreme ultraviolet lithography projection exposure optical system according to claim 2, characterized by, The light intensity distribution data acquisition submodule is composed of a plurality of photodetectors arranged in an area array, and any photodetector is used for acquiring the local light intensity value at the position.

4. The extreme ultraviolet lithography projection exposure optical system according to claim 3, characterized by The light beam shaping module comprises a plurality of gradual attenuation pieces, any of which is arranged on the light output side of the light beam generation module and is perpendicular to the light path direction, and is used for adjusting the light transmittance of the extreme ultraviolet light beam; the plurality of photodetectors correspond to the plurality of gradual attenuation pieces one by one, and any gradual attenuation piece is used for adjusting the light transmittance of the local light beam collected by the corresponding photodetector.

5. An extreme ultraviolet lithography projection exposure method suitable for the extreme ultraviolet lithography projection exposure optical system according to any one of claims 1 to 4, characterized by, The method comprises the following steps: the light beam generation module generates an extreme ultraviolet light beam; the light beam shaping module adjusts the extreme ultraviolet light beam; the light field uniformity adjustment module acquires the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module; the light field uniformity adjustment module adjusts the output power of the light beam generation module according to the light intensity distribution data, so that the lowest light intensity in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment is not lower than the target light intensity; The light field uniformity adjustment module adjusts the light transmittance of the gradual attenuation piece in the extreme ultraviolet beam shaping module according to the extreme ultraviolet beam intensity distribution data output by the light beam shaping module after power adjustment, so that the intensity difference of any two positions in the extreme ultraviolet beam intensity distribution data output by the light beam shaping module after transmittance adjustment does not exceed the difference value limit range; The light beam projection module projects the extreme ultraviolet beam output by the light beam shaping module after transmittance adjustment to the target surface.

6. The extreme ultraviolet lithography projection exposure method according to claim 5, characterized by, The method for adjusting the output power of the light beam generation module according to the light intensity distribution data so that the lowest intensity in the extreme ultraviolet beam intensity distribution data output by the light beam shaping module after power adjustment is not lower than the target intensity comprises the following steps: Extracting the lowest intensity in the light intensity distribution data; Setting the target intensity and comparing the numerical values of the lowest intensity and the target intensity; Adjusting the output power of the light beam generation module according to the numerical value comparison result of the lowest intensity and the target intensity.

7. The extreme ultraviolet lithography projection exposure method according to claim 6, characterized by, The output power of the light beam generation module satisfies the following adjustment rules: If the lowest intensity is lower than the target intensity, increase the output power of the extreme ultraviolet light source module until the lowest intensity in the extreme ultraviolet beam intensity distribution data output by the light beam shaping module after adjustment is not lower than the target intensity; If the lowest intensity is not lower than the target intensity, maintain the current output power of the extreme ultraviolet light source module.

8. The extreme ultraviolet lithography projection exposure method according to claim 5, characterized by, The method for adjusting the light transmittance of the gradual attenuation piece in the extreme ultraviolet beam shaping module according to the extreme ultraviolet beam intensity distribution data output by the light beam shaping module after power adjustment so that the intensity difference of any two positions in the extreme ultraviolet beam intensity distribution data output by the light beam shaping module after transmittance adjustment does not exceed the difference value limit range comprises the following steps: Based on the extreme ultraviolet beam intensity distribution data output by the light beam shaping module after power adjustment, obtaining a uniform reference intensity, which is a reference intensity for measuring the uniformity of the light intensity distribution; Respectively obtaining the difference value of each light intensity in the extreme ultraviolet beam intensity distribution data output by the light beam shaping module after power adjustment and the uniform reference intensity; Setting a difference value limit range and setting the light intensity whose difference value with the uniform reference intensity does not satisfy the difference value limit range as an abnormal light intensity; Respectively adjusting the light transmittance of the gradual attenuation piece corresponding to each abnormal light intensity position so that the intensity difference of any two positions in the extreme ultraviolet beam intensity distribution data output by the light beam shaping module after transmittance adjustment does not exceed the difference value limit range.

9. The extreme ultraviolet lithography projection exposure method according to claim 8, characterized by, The light transmittance of any gradual attenuation piece in the extreme ultraviolet beam shaping module satisfies the following rules: If the difference value of the abnormal light intensity and the uniform reference intensity is lower than any light intensity within the difference value limit range, increase the light transmittance of the gradual attenuation piece corresponding to the abnormal light intensity position; If the difference value of the abnormal light intensity and the uniform reference intensity is higher than any light intensity within the difference value limit range, decrease the light transmittance of the gradual attenuation piece corresponding to the abnormal light intensity position.

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