A monolithic integrated image element signal testing control system and method

Abstract

The present application relates to a kind of monolithic integrated image element signal test control system and method, belong to signal test control field.Integrated detector converts micro-current generated by detection unit or test current signal inputted from outside into voltage signal, then the voltage is amplified in amplitude, through output terminal control circuit, the control of output signal can be realized, according to output use requirement, finally output meets the pulse signal of amplitude requirement, realizes the control of micro-current signal and external input signal of on-chip detection image element, signal amplification processing, low delay signal output mode control.The present application combines the respective advantages of control circuit, detection unit and signal processing circuit, realizes monolithic technology integration, can meet different input test conditions and signal output use requirement, effectively improves the evaluation efficiency of signal processing circuit function and performance.The present application has the performance characteristics of quick control method, fast processing speed, low signal delay, easy on-chip integration etc.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of signal test control and relates to a single-chip integrated image element signal test control system and method. BACKGROUND

[0002] With the development of detector application systems towards miniaturization, high integration and low cost, the connection scheme between traditional detectors, amplification circuits and other discrete devices cannot meet the application requirements. Single-chip integrated structure detectors have the advantages of small area, low packaging cost and small parasitic, and are widely used in optical communication, detection and other fields. With the development of process integration technology, silicon-based detectors are gradually integrated with standard processes. This integration method integrates the detector unit and the signal processing circuit on the same chip, further improving the integration degree and performance. However, after the single-chip integration of the detection pixels and the signal processing circuit, it becomes a technical problem that cannot be operated to independently test and evaluate the performance of the signal processing circuit. At the same time, in the face of the diverse use requirements of signal output modes, how to realize low-cost and high-efficiency testing of the performance of the on-chip signal processing circuit and control of different output modes becomes a technical problem that needs to be solved urgently.

[0003] The existing test method often needs to separate the detector unit and the signal processing circuit for separate testing, which not only increases the complexity and cost of testing, but also cannot truly reflect the performance of the single-chip integrated structure detector in actual application.

[0004] Therefore, the present application provides a single-chip integrated image element signal test control method, which can effectively solve the problem of testing and evaluating the single-chip integrated structure detector and realize the control of different output modes, and has important application value. SUMMARY

[0005] Therefore, the present application provides a single-chip integrated image element signal test control method, which can effectively solve the problem of testing and evaluating the single-chip integrated structure detector and realize the control of different output modes, and has important application value.

[0006] To achieve the above-mentioned purpose, the present application provides the following technical scheme:

[0007] A single-chip integrated image element signal test control system, the system comprising:

[0008] Signal input part:

[0009] Photodiode: receiving optical signals and converting them into micro-current signals;

[0010] Input control module: contains transistors T1, T2 and resistor R1; the base of T1 is connected to the control signal input terminal VC1; the emitter of T1 is connected to the base and collector of T2; the base and collector of T2 are shorted to form a diode; VC2 is a fixed voltage signal input terminal; when the control signal input terminal is high, the transistor is turned on, and the diode is in reverse bias state, no current enters the input terminal of the on-chip circuit; when the control signal input terminal is low, the transistor is cut off, and the diode is in forward bias state, a small current is generated to enter the input terminal of the on-chip signal circuit;

[0011] Signal processing part:

[0012] First-stage amplifier A1: converts current signal into voltage signal; adopts trans-impedance amplifier circuit structure, the first-stage amplifier is composed of a transistor and a resistor connected to its collector, and the second-stage amplifier is composed of a transistor and a resistor connected to its emitter; the feedback resistor is connected across the base of the first transistor and the emitter of the second transistor;

[0013] Capacitor C and resistor RC: connected between the first-stage amplifier and the second-stage amplifier, used for reducing signal noise interference and adjusting the gain of the latter stage;

[0014] Second-stage amplifier A2: amplifies the voltage signal to a certain amplitude; adopts a five-tube amplifier circuit structure with double-ended input and single-ended output, the base stages of two PNP tubes are used as double-ended input tubes, the emitters of the PNP tubes are used as single-ended output, the base stages of two NPN tubes are connected to form a current mirror as an active load, the PNP tube is connected to the power supply and the collector of the PNP input tube to form a current source load to provide bias current for the amplifier circuit; the feedback loop from node B to node A provides a reference voltage for the base of the PNP input tube;

[0015] Signal output part:

[0016] Transistors T3 and T4, resistors R3, R4 and R5, and diode D1: adjust the output resistance and the DC point of the next stage; the base of T3 is the input terminal of A2 signal; the collector of T3 is connected to resistor R3 and the base of T4; the emitter of T4 is connected to R4 and R5; diode D1 is connected in forward direction between the base and collector of T4;

[0017] Output control module: contains transistors T5, T6, T7, resistors R7, R8, R9, diodes D2 and D3, and the collector of T6 outputs a logic control signal; the base of T5 is the control signal input terminal; the emitter of T5 is connected to resistors R7 and R8, and is connected to the base of T6; diode D2 is connected in forward direction between the base and collector of T6; the collector of T6 is connected to resistor R9 and the base of T7; diode D3 is connected between the base and collector of T7;

[0018] Transistor T8 and diode D4: constitute the collector output circuit structure, adjust the output driving ability; diode D4 forward across the base and collector of T8;

[0019] Output load: using pull-up structure resistance, output signal meeting the requirements of driving force and leakage current;

[0020] Reference voltage module:

[0021] To provide a suitable reference voltage for the detector unit and the amplification circuit.

[0022] Further, the first stage amplifier adopts a transimpedance amplifier structure, including a transistor and its collector connected resistor to constitute a pre-shared emitter amplifier, a transistor and its emitter connected resistor to constitute a post-emitter stage follower, and a feedback resistor across the base of the first transistor and the emitter of the second transistor.

[0023] Further, the second stage amplifier adopts a five-tube amplifier circuit structure with double-ended input and single-ended output, including the base stage of two PNP tubes as double-ended input tubes, the emitter of the PNP tube as single-ended output, the base stage of two NPN tubes connected to form a current mirror as an active load, and the PNP tube connected to the power supply and the collector of the PNP input tube to form a current source load to provide bias current for the amplifier circuit.

[0024] Further, the output drive stage includes a transistor and a diode, the base of the transistor is the input end of the amplifier output signal, the emitter of the transistor is connected to a resistor, the other end of the resistor is connected to the collector of the transistor and the positive electrode of the diode, and the negative electrode of the diode is connected to the reference voltage input end.

[0025] Further, the output control module includes a transistor, the base of the transistor is the control signal input end, the emitter of the transistor is connected to a resistor, the other end of the resistor is connected to the collector of the transistor and the base of the output transistor, and the emitter of the output transistor is connected to the reference voltage input end.

[0026] Further, the output control module further includes a transistor and a diode, the base of the transistor is the control signal input end, the emitter of the transistor is connected to a resistor, the other end of the resistor is connected to the collector of the transistor and the base of the output transistor, and the emitter of the output transistor is connected to the reference voltage input end, and the diode is connected between the base and the collector of the output transistor.

[0027] A test control method for a monolithic integrated image element signal, the method comprising:

[0028] The input signal is controlled by the input control module, and the presence or absence of the control input signal is controlled; wherein the control input signal includes controlling the base voltage of the transistor and the conduction state of the diode, thereby controlling whether the micro-current enters the input end of the on-chip circuit;

[0029] When the input control signal is high, the light signal is converted into a current signal by the photodiode;

[0030] When the input control signal is low, a micro-current signal is generated by an external circuit;

[0031] The current signal is converted into a voltage signal by the first-stage amplifier;

[0032] The voltage signal is amplified to a certain amplitude by the second-stage amplifier;

[0033] The output signal is driven by the output drive stage;

[0034] The output mode of the output signal is controlled by the output control module, which is either a normal pulse signal or a constant high-level signal; when the control signal of the output control module is high, the output transistor is turned on, and the output signal is a normal pulse signal; when the control signal of the output control module is low, the output transistor is turned off, and the output signal is a constant high-level signal; the output control module includes a transistor and a diode, the base of the transistor is the control signal input end, the emitter of the transistor is connected to a resistor, the other end of the resistor is connected to the collector of the transistor and the base of the output transistor, the emitter of the output transistor is connected to the reference voltage input end, and the diode is connected between the base and the collector of the output transistor;

[0035] A reference voltage is provided for the detector unit and the amplifier circuit.

[0036] Further, the first-stage amplifier adopts a transimpedance amplifier circuit structure to convert the current signal into a voltage signal.

[0037] Further, the second-stage amplifier adopts a five-tube amplifier circuit structure with double-ended input and single-ended output to amplify the voltage signal to a certain amplitude.

[0038] Further, the output drive stage includes a transistor and a diode, the base of the transistor is the amplifier output signal input end, the emitter of the transistor is connected to a resistor, the other end of the resistor is connected to the collector of the transistor and the positive electrode of the diode, and the negative electrode of the diode is connected to the reference voltage input end.

[0039] The beneficial effects of the present application are: on the basis of ensuring the performance of the monolithic integrated detection unit and the signal processing circuit, the micro-current signal of the on-chip detection pixel and the control of the external input signal are realized, the signal amplification processing, the low delay signal output mode control, and the convenience of integrated device control and test is greatly increased. The technical scheme is characterized in that the respective advantages of the control circuit, the detection unit and the signal processing circuit are combined to realize monolithic technology integration, different input test conditions and signal output use requirements can be met, and the evaluation efficiency of signal processing circuit function and performance is effectively improved. The present application has the performance characteristics of fast control method, fast processing speed, low signal delay, easy on-chip integration, etc., has good application value, and is suitable for application in miniaturized, highly integrated and low-cost detector chips or application systems.

[0040] Other advantages, objects, and features of the present application will be understood in view of the following specification, and will be apparent to those skilled in the art from the teachings of the following specification and associated drawings. The objects and other advantages of the present application will be realized and attained by the structure particularly pointed out in the specification. BRIEF DESCRIPTION OF DRAWINGS

[0041] In order to make the objects, technical solutions and advantages of the present application clearer, the preferred detailed description of the present application will be combined with the drawings to describe the present application, in which:

[0042] Figure 1 Flow chart for processing of detector signals;

[0043] Figure 2 Connection diagram of test control circuit structure;

[0044] Figure 3 Relationship diagram of output signal and control logic. DETAILED DESCRIPTION

[0045] The embodiments of the present application will be described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in the specification. The present application can also be implemented or applied in different specific embodiments, and the details in the specification can be modified or changed based on different views and applications without departing from the spirit of the present application. It should be noted that the diagrams provided in the following examples only illustrate the basic concept of the present application in a schematic manner, and the following examples and features in the examples can be combined with each other without conflict.

[0046] Among them, the drawings are only used for example, the representation is only a schematic diagram, not a physical diagram, and cannot be understood as a limitation on the present application; in order to better illustrate the embodiments of the present application, some components of the drawings will be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art, it is understandable that some well-known structures in the drawings and their descriptions may be omitted.

[0047] The same or similar reference numerals in the drawings of the embodiments of the present application correspond to the same or similar components; in the description of the present application, it should be understood that if the terms "upper", "lower", "left", "right", "front", "back" and the like indicate the orientation or positional relationship shown in the drawings, only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore the positional relationship described in the drawings is only used for example, and cannot be understood as a limitation on the present application, for those skilled in the art, the specific meaning of the above terms can be understood according to the specific situation.

[0048] The technical solution adopted by the present application is: the technical invention converts the micro-current generated by the detection unit or the test current signal input from outside the chip into a voltage signal, and then amplifies the amplitude of the voltage, and through the output end control circuit, the control of the output signal can be realized, according to the output use requirement, finally output the digital pulse signal meeting the amplitude requirement. The test control method of the single-chip integrated image element signal comprises: an input control module, a photodiode, a first-stage amplifier, a second-stage amplifier, an output driving stage, an output control module, a reference voltage, and a reference module, as shown in Figure 1 .

[0049] Figure 1 The on-chip integrated signal processing flow is: first, the detection unit converts the optical signal into a current signal or a test current signal input from outside the chip to the first-stage amplifier A1, the first-stage amplifier converts the input current signal into a voltage signal through a resistance feedback amplifier circuit, then the second-stage amplifier A2 amplifies the output signal of the previous stage to a voltage signal meeting a certain amplitude requirement, finally the output driving stage performs signal output and adjusts the driving capability of the output load; the first-stage amplifier and the second-stage amplifier are connected through a capacitor, which can avoid mutual interference of the direct current working points of the first-stage amplifier and the second-stage circuit and transmit alternating current signals; the reference voltage module provides appropriate reference voltage for the detector unit and the amplifier circuit; the input signal control module provides a test current signal; the output control module can control and adjust the output mode of the signal.

[0050] In Figure 2The test control circuit structure connection diagram is composed of signal input, signal processing and signal output. The signal input part is composed of reference voltage, on-chip detection unit and input test signal control circuit; the signal processing part is composed of first-stage amplifier, second-stage amplifier and isolation capacitor; and the signal output part is composed of common-shooting amplification and source following circuit, output control circuit and output driving circuit.

[0051] The signal input part is composed of detector unit and off-chip input test signal. Under the reverse bias voltage state generated by the reference voltage module 1 and module 2, the detection unit converts the optical signal into a micro-current signal. The off-chip input test signal circuit structure is composed of transistors T1 and T2 and resistor R1. The base of transistor T1 is the control signal input end VC1, the emitter is connected to the base and collector of T2, the base and collector of T2 are shorted to form a diode, and VC2 is the fixed voltage signal input end. When VC1 is high, transistor T1 is turned on, the base voltage of transistor T2 is pulled down, T2 is shorted to form a diode in reverse bias state, and no current enters the input end of the on-chip circuit. When VC1 is low, transistor T1 is turned off, and a voltage greater than the forward conduction voltage of the diode is applied to the base of transistor T2, so that a micro-current is generated through the diode and enters the input end of the on-chip signal circuit. Therefore, when the monolithic integrated device is working normally, VC1 is connected to the high-level control signal, the base of transistor T2 is in a suspended state, and the light-induced micro-current is provided by the detection unit and enters the signal processing circuit; when it is necessary to test and evaluate the performance of the on-chip signal processing circuit, VC1 is connected to the low-level control signal, and a voltage greater than the forward conduction voltage of the diode is applied to the base of transistor T2, so that a micro-current is generated through the diode and enters the on-chip signal circuit.

[0052] The signal processing circuit structure comprises two stages of amplifiers, the first stage amplifier A1 can convert current signal into voltage signal, the amplification circuit adopts conventional trans-impedance amplification circuit structure, feedback resistance is connected in parallel between input end and output end, voltage parallel negative feedback is formed, so that the amplification circuit has low input impedance, large bandwidth, high gain and other characteristics. The trans-impedance amplification circuit structure comprises pre-shared amplifiers composed of transistors and collector connecting resistors, post-emitter follower composed of transistors and emitter connecting resistors, and feedback resistance across the base of the first transistor and the emitter of the second transistor. The second stage amplifier A2 adopts conventional five-tube amplification circuit structure of double-ended input and single-ended output, can amplify the voltage signal output by the first stage amplification circuit to an appropriate amplitude for processing by the subsequent circuit, and the circuit structure is as follows: the base stage of two PNP tubes is used as double-ended input tube, the emitter of the PNP tube is used as single-ended output, the base stage of two NPN tubes is connected to form a current mirror as active load, the PNP tube is connected with the power supply and the collector of the PNP input tube, forming a current source load to provide bias current for the amplification circuit. The feedback loop from node B to node A mainly provides reference voltage for the base of the PNP input tube. The first stage amplification circuit and the second stage amplification circuit are connected through capacitor C and resistor RC, which can reduce signal noise interference and adjust the gain of the subsequent stage.

[0053] The signal output circuit structure is composed of three parts, the first part is composed of transistors T3 and T4, resistors R3, R4 and R5, and diode D1, which can adjust the output resistance and the DC point of the next stage, the base of transistor T3 is the input end of A2 signal, the collector of T3 is connected with resistor R3 and the base of T4, the emitter of T4 is connected with R4 and R5, and diode D1 is connected in forward direction between the base and the collector of T4. Figure 3As shown, when VC3 is high, transistor T5 is on, T6 is on, T7 is off, and the output signal Vout is the normal pulse signal of Vin, when VC3 is low, transistor T5 is off, T6 is off, T7 is on, the output transistor is forced off, and the output signal Vout is a constant high level;The circuit structure connection relationship is that the base stage of transistor T5 is the control signal input end, the emitter thereof is connected with resistors R7 and R8 and is connected with the base stage of transistor T6, diode D2 is connected in series between the base stage and the collector of T6, the collector of transistor T6 is connected with resistor R9 and the base stage of transistor T7, diode D3 is connected between the base stage and the collector of T7, and the collector of transistor T6 outputs a logic control signal.The third part is a collector output circuit structure composed of transistor T8 and diode D4, diode D4 is connected in series between the base stage and the collector of transistor T8, the circuit structure can adjust the output driving capacity, the output load adopts an up pull structure resistor, and the signal meeting the driving force, leakage current and other requirements can be outputted.The functions of diodes D1, D2, D3 and D4 are to improve the charge discharge speed and the switching speed of the transistor.

[0054] The present application converts the photo-generated current of the detection unit into a voltage signal, and carries out voltage amplification, low delay and low output leakage and other signal processing, and finally outputs a voltage or digital signal meeting the amplitude requirement, so that the on-chip real-time low delay processing and fast data rate output of the current signal are realized.

[0055] The working process of the embodiment will be explained in detail below. Figure 1 The signal processing flow chart of the single-chip integrated detector is explained, including: input control module, photodiode, first-stage amplifier, second-stage amplifier, output driving stage, output control module, reference voltage, reference module; Figure 2 The test control circuit structure connection diagram records the connection relationship of the circuit structure of input signal control, signal amplification processing and output signal control; Figure 3 The output signal and control logic relationship diagram explains the relationship between VC1 control signal and output signal.

[0056] The working process of the embodiment is as follows:

[0057] Figure 1The on-chip integrated signal processing procedure is as follows: first, the light signal is converted into a current signal by the detection unit, or the test current signal input from outside the chip is input to the first-stage amplifier A1, the input current signal is converted into a voltage signal by the first-stage amplifier through a resistance feedback amplification circuit, the output signal of the previous stage is amplified to a voltage signal with a certain amplitude requirement by the second-stage amplifier A2, and finally the signal output is performed by the output driving stage and the driving capability of the output load is adjusted; the first-stage amplifier and the second-stage amplifier are connected through a capacitor, which can avoid mutual interference of the direct current working points of the first-stage amplifier and the second-stage circuit and transmit alternating current signals; the reference voltage module provides appropriate reference voltages for the detector unit and the amplification circuit; the input signal control module provides a test current signal; and the output control module can control and adjust the output mode of the signal.

[0058] In Figure 2 In the test control circuit structure connection diagram of the single-chip integrated device, the overall circuit structure is composed of a signal input part, a signal processing part and a signal output part. The signal input part is composed of a reference voltage, an on-chip detection unit and a control circuit of an input test signal; the signal processing part is composed of a first-stage amplifier, a second-stage amplifier and an isolation capacitor; and the signal output part is composed of a common-emitter amplification and source follower circuit, an output control circuit and an output driving circuit.

[0059] The signal input part is composed of a detector unit and an input test signal from outside the chip. Under the reverse bias voltage state generated by the reference voltage modules 1 and 2, the function of the detection unit is to convert the light signal into a micro-current signal. The circuit structure of the input test signal from outside the chip is composed of transistors T1 and T2 and a resistor R1. The base of the transistor T1 is a control signal input end VC1, the emitter thereof is connected to the base and the collector of the transistor T2, the base and the collector of the transistor T2 are short-circuited to form a diode, and VC2 is a fixed voltage signal input end. When VC1 is at a high level, the transistor T1 is turned on, the base voltage of the transistor T2 is pulled down, the diode formed by the short-circuiting of the base and the collector of the transistor T2 is in a reverse bias state, and no current enters the input end of the on-chip circuit. When VC1 is at a low level, the transistor T1 is turned off, a voltage greater than the forward conduction voltage of the diode can be applied to the base of the transistor T2, and a micro-current is generated through the diode and enters the input end of the on-chip signal circuit. Therefore, when the single-chip integrated device is normally working, VC1 is connected to a high-level control signal, the base of the transistor T2 is in a suspended state, and the light-induced micro-current is provided by the detection unit and enters the signal processing circuit; when the performance of the on-chip signal processing circuit needs to be tested and evaluated, VC1 is connected to a low-level control signal, and a voltage greater than the forward conduction voltage of the diode is applied to the base of the transistor T2, so that a micro-current is generated through the diode and enters the on-chip signal circuit.

[0060] The signal processing circuit structure comprises two stages of amplifiers, the first stage amplifier A1 can convert current signal into voltage signal, the amplification circuit adopts conventional trans-impedance amplification circuit structure, feedback resistance is connected in parallel between input end and output end, voltage parallel negative feedback is formed, so that the amplification circuit has low input impedance, large bandwidth, high gain and other characteristics. The trans-impedance amplification circuit structure comprises pre-shared amplifiers composed of transistors and collector connecting resistors, post-emitter follower composed of transistors and emitter connecting resistors, and feedback resistance across the base of the first transistor and the emitter of the second transistor. The second stage amplifier A2 adopts conventional five-tube amplification circuit structure of double-ended input and single-ended output, can amplify the voltage signal output by the first stage amplification circuit to an appropriate amplitude for processing by the subsequent circuit, and the circuit structure is as follows: the base stage of two PNP tubes is used as double-ended input tube, the emitter of the PNP tube is used as single-ended output, the base stage of two NPN tubes is connected to form a current mirror as active load, the PNP tube is connected with the power supply and the collector of the PNP input tube, forming a current source load to provide bias current for the amplification circuit. The feedback loop from node B to node A mainly provides reference voltage for the base of the PNP input tube. The first stage amplification circuit and the second stage amplification circuit are connected through capacitor C and resistor RC, which can reduce signal noise interference and adjust the gain of the subsequent stage.

[0061] The signal output circuit structure is composed of three parts, the first part is composed of transistors T3 and T4, resistors R3, R4 and R5, and diode D1, which can adjust the output resistance and the DC point of the next stage, the base of transistor T3 is the input end of A2 signal, the collector of T3 is connected with resistor R3 and the base of T4, the emitter of T4 is connected with R4 and R5, and diode D1 is connected in forward direction between the base and the collector of T4. Figure 3As shown, when VC3 is high, transistor T5 is on, T6 is on, T7 is off, and the output signal Vout is the normal pulse signal of Vin; when VC3 is low, transistor T5 is off, T6 is off, T7 is on, and the output transistor is forced off, and the output signal Vout is a constant high level; the circuit structure connection relationship is: the base of transistor T5 is the control signal input end, the emitter thereof is connected with resistors R7 and R8 and the base of transistor T6, diode D2 is connected between the base and the collector of T6 in forward direction, the collector of T6 is connected with resistor R9 and the base of transistor T7, diode D3 is connected between the base and the collector of T7, and the collector of T6 outputs the logic control signal. The third part is the collector output circuit structure composed of transistor T8 and diode D4, diode D4 is connected between the base and the collector of T8 in forward direction, the circuit structure can adjust the output driving capacity, the output load adopts the pull-up structure resistor, and the signal meeting the driving force, leakage current and other requirements can be output. The functions of diodes D1, D2, D3 and D4 are to improve the charge discharge speed and the switching speed of the transistor.

[0062] Finally, it should be pointed out that the above embodiments are only used to illustrate the technical solutions of the present application and not to limit it, although the present application has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can be modified or replaced equivalently without departing from the purpose and scope of the technical solutions, and they should be covered in the scope of the claims of the present application.

Claims

1. A test control system for monolithic integrated pixel signals, characterized by: The system includes: Signal input part: Photodiode: Receives light signals and converts them into micro-current signals; Input control module: Contains transistors T1 and T2 and resistor R1; the base of T1 is connected to the control signal input terminal VC1; the emitter of T1 is connected to the base and collector of T2; the base and collector of T2 are short-circuited to form a diode; VC2 is the fixed voltage signal input terminal; when the control signal input terminal is high, the transistor is turned on, the diode is in a reverse bias state, and no current enters the input terminal of the on-chip circuit; when the control signal input terminal is low, the transistor is turned off, the diode is in a forward bias state, and a small current is generated and enters the input terminal of the on-chip signal circuit; Signal processing part: First-stage amplifier A1: converts the current signal into a voltage signal; it adopts a transimpedance amplifier circuit structure, with a transistor and its collector connected to a resistor forming a pre-emitter amplifier, a transistor and its emitter connected to a resistor forming a post-emitter follower, and a feedback resistor connected across the base of the first transistor and the emitter of the second transistor; Capacitor C and resistor RC: connect the first-stage amplifier and the second-stage amplifier to reduce signal noise interference and adjust the gain of the subsequent stage; Second-stage amplifier A2: Amplifies the voltage signal to a certain amplitude. It uses a five-transistor amplifier circuit structure with dual-end input and single-end output. The bases of two PNP transistors serve as dual-end input transistors, and the emitters of the PNP transistors serve as single-ended outputs. The bases of two NPN transistors are connected to form a current mirror, which becomes an active load. The PNP transistors are connected to the power supply and the collectors of the PNP input transistors, forming a current source load that provides bias current for the amplifier circuit. The feedback loop from node B to node A provides a reference voltage for the base of the PNP input transistor. Signal output part: Output driver stage: transistors T3 and T4, resistors R3, R4 and R5, diode D1: adjust the output resistance and the DC point of the next stage; the base of T3 is the input end of the A2 signal; the collector of T3 is connected to the base of resistor R3 and T4; the emitter of T4 is connected to R4 and R5; the diode D1 is connected in the forward direction between the base and collector of T4; Output control module: includes transistors T5, T6, T7, resistors R7, R8, R9, diodes D2, D3, and the collector of transistor T6 to output logic control signals; the base of T5 is the control signal input terminal; the emitter of T5 is connected to resistors R7 and R8, and is connected to the base of T6; the diode D2 is forward connected between the base and collector of T6; the collector of T6 is connected to resistor R9 and the base of T7; the diode D3 is connected between the base and collector of T7; Transistor T8 and diode D4: form the collector output circuit structure to adjust the output drive capability; diode D4 is forward connected across the base and collector of T8; Output load: Use pull-up structure resistor to output a signal that meets the requirements of driving force and leakage current; Reference voltage module: Provide reference voltage for detector unit and amplifier circuit.

2. The monolithic integrated pixel signal test control system according to claim 1, characterized in that: The first-stage amplifier adopts a transimpedance amplifier circuit structure, including a transistor and its collector connected to a resistor to form a pre-emitter amplifier, a transistor and its emitter connected to a resistor to form a post-emitter follower, and a feedback resistor connected across the base of the first transistor and the emitter of the second transistor.

3. The monolithic integrated pixel signal test control system according to claim 1, characterized in that: The second-stage amplifier adopts a five-tube amplifier circuit structure with dual-end input and single-end output, including the base of two PNP tubes as dual-end input tubes, the emitter of the PNP tube as a single-ended output, the base of two NPN tubes connected to form a current mirror as an active load, and the PNP tube connected to the power supply and the collector of the PNP input tube to form a current source load to provide bias current for the amplifier circuit.

4. The monolithic integrated pixel signal test control system according to claim 1, characterized in that: The output driving stage includes a transistor and a diode, the base of the transistor is the amplifier output signal input terminal, the emitter of the transistor is connected to the resistor, the other end of the resistor is connected to the collector of the transistor and the positive electrode of the diode, and the negative electrode of the diode is connected to the reference voltage input terminal.

5. The monolithic integrated pixel signal test control system according to claim 1, characterized in that: The output control module includes a transistor, the base of the transistor is a control signal input terminal, the emitter of the transistor is connected to a resistor, the other end of the resistor is connected to the collector of the transistor and the base of the output transistor, and the emitter of the output transistor is connected to the reference voltage input terminal.

6. The monolithic integrated pixel signal test control system according to claim 1, characterized in that: The output control module also includes a transistor and a diode, the base of the transistor is the control signal input terminal, the emitter of the transistor is connected to the resistor, the other end of the resistor is connected to the collector of the transistor and the base of the output transistor, the emitter of the output transistor is connected to the reference voltage input terminal, and the diode is connected between the base and collector of the output transistor.

7. A method for controlling the test of monolithic integrated pixel signals based on the system according to any one of claims 1 to 6, characterized in that: The method includes: The input signal is controlled by the input control module to control the presence or absence of the input signal; wherein, controlling the input signal includes controlling the base voltage of the transistor, controlling the conduction state of the diode, and further controlling whether the microcurrent enters the input terminal of the on-chip circuit; When the input control signal is high, the photodiode converts the light signal into a current signal; When the input control signal is at a low level, a micro-current signal is generated by the external circuit; Convert the current signal into a voltage signal through the first-stage amplifier; Amplify the voltage signal to a certain amplitude through the second-stage amplifier; Drive the output signal through the output driver stage; The output mode of the output signal is controlled by the output control module so that it is a normal pulse signal or a constant high-level signal; when the control signal of the output control module is at a high level, the output transistor is turned on and the output signal is a normal pulse signal; when the control signal of the output control module is at a low level, the output transistor is turned off and the output signal is a constant high-level signal; the output control module includes a transistor and a diode, the base of the transistor is a control signal input terminal, the emitter of the transistor is connected to a resistor, the other end of the resistor is connected to the collector of the transistor and the base of the output transistor, the emitter of the output transistor is connected to the reference voltage input terminal, and the diode is connected between the base and collector of the output transistor; Provide reference voltage for detector unit and amplifier circuit.

8. The method for controlling the test of monolithic integrated pixel signals according to claim 7, wherein: The first-stage amplifier adopts a transimpedance amplifier circuit structure to convert the current signal into a voltage signal.

9. The method for controlling the test of monolithic integrated pixel signals according to claim 7, wherein: The second-stage amplifier adopts a five-tube amplifier circuit structure with dual-end input and single-end output to amplify the voltage signal to a certain amplitude.

10. The method for controlling the test of monolithic integrated pixel signals according to claim 7, wherein: The output driving stage includes a transistor and a diode, the base of the transistor is the amplifier output signal input terminal, the emitter of the transistor is connected to the resistor, the other end of the resistor is connected to the collector of the transistor and the positive electrode of the diode, and the negative electrode of the diode is connected to the reference voltage input terminal.

Images