Method and System for Evaluating Cleaning Effect of Sapphire Substrate Wafer

Abstract

The present invention relates to the technical field of wafer cleaning analysis, and particularly to a method and system for evaluating the cleaning effect of sapphire substrate wafers. The present invention analyzes the metal residue cleaning effect of sapphire substrate wafers by obtaining metal residue data; at the same time, obtains stain residue data to analyze the stain residue cleaning effect of sapphire substrate wafers; evaluates the cleaning effect of sapphire substrate wafers according to the analysis results of the metal residue cleaning effect and the stain residue cleaning effect; constructs a cleaning effect prediction model for sapphire substrate wafers based on the evaluation results and preset cleaning parameter data to predict the cleaning effect of the sapphire substrate wafers to be cleaned; and resets the preset cleaning parameters of the sapphire substrate wafers according to the prediction results. The present invention can fully reflect the overall cleaning effect of sapphire substrate wafers, optimize the existing cleaning effect evaluation method, and thus improve the performance and reliability of the final device.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer cleaning analysis, and particularly to a method and system for evaluating the cleaning effect of sapphire substrate wafers. Background Art

[0002] Sapphire substrate wafers, as an indispensable cornerstone material in the semiconductor technology and optoelectronic industries, with their excellent physical properties and chemical stability, have shown broad application prospects in many high-tech fields. However, during the preparation and processing of sapphire substrates, the wafer surface is often unavoidably contaminated by a series of pollutants, such as airborne particles, residual organic matter during processing, and metal ions from equipment, the environment, or the process itself. These not only affect the quality of the wafers but also directly relate to the performance and reliability of the final devices.

[0003] Among the numerous pollutants on sapphire substrate wafers, metal residues are undoubtedly one of the most destructive factors. On the one hand, metal ions are introduced into the device as impurities, interfering with the normal carrier transport process, resulting in a decrease in carrier mobility, an increase in the resistance of the device, and thus affecting its electrical characteristics, such as the deviation of key parameters like current density and threshold voltage, which greatly reduces the working efficiency and energy consumption ratio of the device. On the other hand, metal ions may also become recombination centers, promoting the occurrence of non-radiative recombination processes, which not only significantly reduces the luminous efficiency and light output power of optoelectronic devices but also increases the heat dissipation of the device, accelerates the aging process of the device, and shortens its service life.

[0004] However, when analyzing the cleaning effect of sapphire substrate wafers in the prior art, it often focuses on analyzing the cleaning effectiveness of particulate pollutants and organic matter residues, but ignores the impact of metal residues on the evaluation of the cleaning effect of sapphire substrate wafers. At the same time, the prior art only evaluates the cleaning effect of pollutants on the wafer surface through simple image analysis, without considering the influence of the attachment form and penetration depth of metal ions on the wafer surface on the cleaning effect. Therefore, the existing cleaning effect evaluation methods are relatively one-sided and cannot fully reflect the overall cleaning effect of sapphire substrate wafers; this tendency in the prior art not only restricts the overall optimization of the cleaning process but also potentially weakens the performance and reliability of the final devices.

[0005] To solve these problems, the present application designs a method and system for evaluating the cleaning effect of sapphire substrate wafers. Summary of the Invention

[0006] The object of the present invention is to provide a method and system for evaluating the cleaning effect of sapphire substrate wafers. The method for evaluating the cleaning effect of sapphire substrate wafers provided by the embodiments of the present invention can fully reflect the overall cleaning effect of sapphire substrate wafers, optimize the existing cleaning effect evaluation method, and thus improve the performance and reliability of the final device.

[0007] The present invention is implemented as follows:

[0008] In a first aspect, the present invention provides a method for evaluating the cleaning effect of sapphire substrate wafers, including the following steps:

[0009] S1. Obtain the metal residue data and stain residue data of multiple sapphire substrate wafers in history, and at the same time obtain the preset cleaning parameter data of multiple sapphire substrate wafers in history;

[0010] S2. Import the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; at the same time, import the stain residue data into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer;

[0011] S3. Evaluate the cleaning effect of the sapphire substrate wafer according to the metal residue cleaning effect analysis result and the stain residue cleaning effect analysis result;

[0012] S4. Construct a cleaning effect prediction model for sapphire substrate wafers according to the cleaning effect evaluation result of the sapphire substrate wafer and the preset cleaning parameter data, and use it to predict the cleaning effect of the sapphire substrate wafer to be cleaned;

[0013] S5. Reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned.

[0014] Preferably, on the basis of the above solution, the step S2 includes the following specific steps:

[0015] S21. Extract the metal residue data of the sapphire substrate wafer; wherein, the metal residue data includes the metal residue data before cleaning and the metal residue data after cleaning;

[0016] S22. Import the metal residue data before cleaning and the metal residue data after cleaning of the sapphire substrate wafer into the metal residue cleaning effect coefficient calculation formula to calculate the metal residue cleaning effect coefficient of the sapphire substrate wafer; the metal residue cleaning effect coefficient calculation formula is:

[0017] ;

[0018] In the formula, JS represents the metal residue cleaning effect coefficient of the sapphire substrate wafer, G is the mass of the sapphire substrate wafer after cleaning in the metal residue data after cleaning; S represents the surface area of the sapphire substrate wafer; Ai represents the concentration of the i-th residual metal element before cleaning obtained by X-ray fluorescence spectrometry in the metal residue data before cleaning; Bi represents the concentration of the i-th residual metal element after cleaning obtained by X-ray fluorescence spectrometry in the metal residue data after cleaning; n represents the number of residual metal elements obtained by X-ray fluorescence spectrometry, and i is any one of 1 to n.

[0019] Preferably, on the basis of the above solution, the step S2 further includes the following specific steps:

[0020] S23. Extract the stain residue data of the sapphire substrate wafer, where the stain residue data includes the stain residue data before cleaning and the stain residue data after cleaning;

[0021] S24. Import the stain residue data before cleaning and the stain residue data after cleaning into the stain residue cleaning effect coefficient calculation formula to calculate the stain residue cleaning effect coefficient of the sapphire substrate wafer; the stain residue cleaning effect coefficient calculation formula is:

[0022] ;

[0023] In the formula, WZ represents the stain residue cleaning effect coefficient of the sapphire substrate wafer, Sw represents the area of organic pollutants obtained by analyzing the image of the sapphire substrate wafer before cleaning in the stain residue data before cleaning, Swc represents the area of organic pollutants obtained by analyzing the image of the sapphire substrate wafer after cleaning in the stain residue data after cleaning, Nk represents the number of particulate matters attached to the sapphire substrate wafer before cleaning in the stain residue data before cleaning, Nkc represents the number of particulate matters attached to the sapphire substrate wafer after cleaning in the stain residue data after cleaning, where represents the influence weight of organic pollutants, .

[0024] Preferably, on the basis of the above solution, the step S3 includes the following specific contents:

[0025] S31. Obtain the calculated metal residue cleaning effect coefficient and stain residue cleaning effect coefficient of the sapphire substrate wafer;

[0026] S32. Import the metal residue cleaning effect coefficient and the stain residue cleaning effect coefficient into the cleaning effect coefficient calculation formula to calculate the cleaning effect coefficient of the sapphire substrate wafer; the cleaning effect coefficient calculation formula is:

[0027] ;

[0028] In the formula, QX represents the cleaning effect coefficient of the sapphire substrate wafer, a and b respectively represent the proportion coefficient of the influence of metal residue and the proportion coefficient of the influence of stain residue, and a + b = 1;

[0029] S33. Obtain the cleaning effect coefficients of multiple sapphire substrate wafers calculated historically.

[0030] Preferably based on the above solution, the step S4 includes the following specific steps:

[0031] S41. Obtain the sapphire substrate wafer sample data for training the sapphire substrate wafer cleaning effect prediction model. The sapphire substrate wafer sample data includes the cleaning effect coefficients of multiple sapphire substrate wafers calculated historically, and also includes the surface areas of multiple sapphire substrate wafers historically, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data; wherein, the preset cleaning parameter data includes the preset cleaning time, the preset cleaning solution temperature, and the preset cleaning solution pH value;

[0032] S42. Divide the sapphire substrate wafer sample data for training the sapphire substrate wafer cleaning effect prediction model into a wafer sample training set and a wafer sample test set, construct a regression network model, use the surface area of the sapphire substrate wafer, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data in the wafer sample training set as the input of the regression network model, use the cleaning effect coefficient of the sapphire substrate wafer in the wafer sample training set as the output of the regression network model, train the regression network model to obtain an initial regression network model; use the equalization error algorithm to evaluate the model effect of the initial regression network model, and select the corresponding initial regression network model greater than or equal to the preset evaluation value as the sapphire substrate wafer cleaning effect prediction model;

[0033] S43. Obtain the surface area of the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data, input the surface area of the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data into the sapphire substrate wafer cleaning effect prediction model, and output the predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned.

[0034] Preferably based on the above solution, the step S5 includes the following specific content:

[0035] Obtain the predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned, preset a cleaning effect threshold, and when the cleaning effect coefficient of the sapphire substrate wafer to be cleaned is less than the cleaning effect threshold, send a warning for resetting the preset cleaning parameters to the operator.

[0036] In a second aspect, the present invention provides a cleaning effect evaluation system for sapphire substrate wafers, comprising:

[0037] A data acquisition module, configured to acquire metal residue data and stain residue data of multiple sapphire substrate wafers in history, and simultaneously acquire preset cleaning parameter data of multiple sapphire substrate wafers in history;

[0038] A residual cleaning effect analysis module, configured to import the metal residue data into a metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; and simultaneously import the stain residue data into a stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer;

[0039] A cleaning effect evaluation module, configured to evaluate the cleaning effect of the sapphire substrate wafer according to the analysis results of the metal residue cleaning effect and the stain residue cleaning effect;

[0040] A cleaning effect prediction module, configured to construct a cleaning effect prediction model for the sapphire substrate wafer according to the cleaning effect evaluation result of the sapphire substrate wafer and the preset cleaning parameter data, and used to predict the cleaning effect of the sapphire substrate wafer to be cleaned;

[0041] A cleaning parameter resetting module, configured to reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned;

[0042] A control module, configured to control the operation of the data acquisition module, the residual cleaning effect analysis module, the cleaning effect evaluation module, the cleaning effect prediction module, and the cleaning parameter resetting module.

[0043] In a third aspect, the present invention provides an electronic device, comprising: a processor and a memory, wherein a computer program callable by the processor is stored in the memory; the processor executes a cleaning effect evaluation method for sapphire substrate wafers by calling the computer program stored in the memory.

[0044] In a fourth aspect, the present invention provides a computer-readable storage medium storing instructions, which, when run on a computer, cause the computer to execute a cleaning effect evaluation method for sapphire substrate wafers.

[0045] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0046] The present invention analyzes the cleaning effect of metal residues on sapphire substrate wafers by obtaining metal residue data; simultaneously analyzes the cleaning effect of stain residues on sapphire substrate wafers by obtaining stain residue data; evaluates the cleaning effect of sapphire substrate wafers according to the analysis results of the metal residue cleaning effect and the stain residue cleaning effect; constructs a prediction model for the cleaning effect of sapphire substrate wafers based on its evaluation results and preset cleaning parameter data to predict the cleaning effect of the sapphire substrate wafers to be cleaned; and resets the preset cleaning parameters of the sapphire substrate wafers according to its prediction results. The present invention can fully reflect the overall cleaning effect of sapphire substrate wafers, optimize the existing cleaning effect evaluation method, and thus improve the performance and reliability of the final device. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Other features, objects, and advantages of the present invention will become more apparent by reading the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0048] Figure 1 is a schematic overall flow chart of the cleaning effect evaluation method for sapphire substrate wafers of the present invention;

[0049] Figure 2 is a preparation flow chart of sapphire substrate wafers in the cleaning effect evaluation method for sapphire substrate wafers of the present invention;

[0050] Figure 3 is a schematic structural diagram of the cleaning effect evaluation system for sapphire substrate wafers of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0051] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific features in the embodiments of the present invention and the embodiments are detailed descriptions of the technical solution of the present invention, rather than limitations on the technical solution of the present invention. Without conflict, the technical features in the embodiments of the present invention and the embodiments can be combined with each other.

[0052] Embodiment 1

[0053] As Figure 2 shown, the embodiment of the present invention provides a preparation flow chart of sapphire substrate wafers. During the preparation process of sapphire substrate wafers in the prior art, it is very easy to cause a large amount of metal residues in different preparation stages of sapphire substrate wafers. The general preparation process of sapphire substrate wafers includes the following stages:

[0054] In the slicing stage, the ingot is cut into thin wafers using high-precision cutting equipment. These wafers will form the basis for the subsequent sapphire substrate wafers. During this process, if the cutting equipment or blade contains metal impurities, or if a metal-containing coolant is used during cutting, there is a possibility of metal residue.

[0055] In the chamfering stage, the edges of the sliced sapphire wafers are ground to make them smoother, avoiding stress concentration or cracking during subsequent processing. Abrasives are usually used for grinding in this stage. If the abrasives contain metal impurities, there is a possibility of metal residue on the subsequent wafers.

[0056] In the lapping stage, the sapphire wafers are finely polished using lapping equipment to remove the micro-scratches and unevenness generated during slicing and chamfering. If the lapping fluid and lapping plate used during lapping contain metal impurities, there is a possibility of metal residue.

[0057] In the annealing stage, the lapped sapphire wafers are heat-treated at high temperature to eliminate the internal stress and improve their stability and reliability.

[0058] In the waxing stage, a layer of wax is coated on the surface of the sliced or lapped sapphire wafers to facilitate subsequent processing and handling.

[0059] In the copper polishing stage, the sapphire wafers are polished using a copper disk and abrasive to further remove scratches and unevenness and improve the surface quality. The copper polishing stage is one of the stages most likely to cause metal residue. Because the copper disk is in direct contact with the sapphire wafers, when the copper disk contains metal impurities or wears during polishing to generate metal particles, metal elements will remain on the sapphire wafers.

[0060] In the soft polishing stage, the sapphire wafers are further polished using softer polishing materials and finer abrasives to meet higher surface quality requirements.

[0061] In the cleaning stage, the sapphire wafers are cleaned using cleaning agents such as deionized water and organic solvents to remove the impurities and contaminants generated during grinding and polishing, obtaining the final sapphire substrate wafers.

[0062] In the above preparation process, the cleaning stage, as a key link in the production process of sapphire substrate wafers, is of self-evident importance. In this stage, through the use of high-purity deionized water, selected organic solvents, and other highly efficient cleaning agents, the sapphire wafers that have undergone grinding and polishing are deeply cleaned to thoroughly remove various impurities and pollutants generated during the processing. These impurities and pollutants may include grinding particles, polishing agent residues, grease, dust, and other microscopic contaminants, all of which may have an adverse impact on the final quality and performance of the sapphire substrate wafers. However, in the existing technology, when evaluating the cleaning effect, it mainly relies on methods such as image analysis and particle counting. Although these methods can intuitively reflect the cleanliness of the surface of the sapphire wafers after cleaning, as well as the quantity and size distribution of the remaining particles, they somewhat overlook the potential problem of metal residues. Metal residues, especially those in the form of trace metal ions or particles, are often easily overlooked because of their small size and the difficulty of being directly captured by conventional detection methods. However, metal residues have a profound impact on the performance of sapphire substrate wafers. Metal elements may be introduced into the wafers as impurities, affecting the electrical, optical, or thermal properties of the crystals; they may also form microscopic defects or contamination points on the wafer surface, reducing the overall quality and reliability of the wafers. Therefore, in the cleaning stage, in addition to analyzing the cleaning effect of general organic substances and particulate matter, it is also necessary to analyze the cleaning effect of the metal element residues.

[0063] Therefore, this embodiment provides a method for evaluating the cleaning effect of sapphire substrate wafers, as Figure 1 shown, the method specifically includes the following steps:

[0064] S1. Obtain the metal residue data and stain residue data of multiple sapphire substrate wafers in history, and at the same time obtain the preset cleaning parameter data of multiple sapphire substrate wafers in history;

[0065] S2. Import the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafers; at the same time, import the stain residue data into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafers;

[0066] S3. Evaluate the cleaning effect of the sapphire substrate wafers according to the analysis results of the metal residue cleaning effect and the stain residue cleaning effect;

[0067] S4. Construct a cleaning effect prediction model for sapphire substrate wafers according to the cleaning effect evaluation results of the sapphire substrate wafers and the preset cleaning parameter data, for predicting the cleaning effect of the sapphire substrate wafers to be cleaned;

[0068] S5. Reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned.

[0069] As a preferred technical solution of the present invention, in step S2, by introducing a metal residue cleaning effect coefficient and a stain residue cleaning effect coefficient, the cleaning effect that was originally difficult to intuitively measure is converted into specific values. The metal residue cleaning effect coefficient comprehensively evaluates the cleaning effect of metal residues on the sapphire substrate wafer by considering factors such as the change in the concentration of metal residues before and after cleaning, the mass and surface area of the sapphire substrate wafer; the stain residue cleaning effect coefficient quantifies the cleaning effect of stain residues on the sapphire substrate wafer by comparing the area of organic pollutants and the number of particulate matters before and after cleaning, thereby improving the objectivity and accuracy of cleaning effect evaluation. In this embodiment, step S2 includes the following specific steps:

[0070] S21. Extract the metal residue data of the sapphire substrate wafer; wherein, the metal residue data includes the metal residue data before cleaning and the metal residue data after cleaning;

[0071] S22. Import the metal residue data before cleaning and the metal residue data after cleaning of the sapphire substrate wafer into the metal residue cleaning effect coefficient calculation formula to calculate the metal residue cleaning effect coefficient of the sapphire substrate wafer; the metal residue cleaning effect coefficient calculation formula is:

[0072] ;

[0073] In the formula, JS represents the metal residue cleaning effect coefficient of the sapphire substrate wafer, G is the mass of the sapphire substrate wafer after cleaning in the metal residue data after cleaning; S represents the surface area of the sapphire substrate wafer; Ai represents the concentration of the i-th residual metal element before cleaning obtained by X-ray fluorescence spectrometry in the metal residue data before cleaning; Bi represents the concentration of the i-th residual metal element after cleaning obtained by X-ray fluorescence spectrometry in the metal residue data after cleaning; n represents the number of residual metal elements obtained by X-ray fluorescence spectrometry, and i is any one from 1 to n.

[0074] As a preferred technical solution of the present invention, step S2 further includes the following specific steps:

[0075] S23. Extract the stain residue data of the sapphire substrate wafer, wherein the stain residue data includes the stain residue data before cleaning and the stain residue data after cleaning;

[0076] S24. Import the stain residue data before cleaning and the stain residue data after cleaning into the stain residue cleaning effect coefficient calculation formula to calculate the stain residue cleaning effect coefficient of the sapphire substrate wafer; the stain residue cleaning effect coefficient calculation formula is:

[0077] ;

[0078] In the formula, WZ represents the cleaning effect coefficient of the stain residue on the sapphire substrate wafer, Sw represents the area of organic pollutants obtained by analyzing the image of the sapphire substrate wafer before cleaning in the stain residue data before cleaning, Swc represents the area of organic pollutants obtained by analyzing the image of the sapphire substrate wafer after cleaning in the stain residue data after cleaning, Nk represents the number of particulate matters attached to the sapphire substrate wafer before cleaning in the stain residue data before cleaning, Nkc represents the number of particulate matters attached to the sapphire substrate wafer after cleaning in the stain residue data after cleaning, where, represents the influence weight of organic pollutants, .

[0079] As a preferred technical solution of the present invention, step S3 includes the following specific contents:

[0080] S31. Obtain the calculated metal residue cleaning effect coefficient and stain residue cleaning effect coefficient of the sapphire substrate wafer;

[0081] S32. Import the metal residue cleaning effect coefficient and the stain residue cleaning effect coefficient into the cleaning effect coefficient calculation formula to calculate the cleaning effect coefficient of the sapphire substrate wafer; the cleaning effect coefficient calculation formula is:

[0082] ;

[0083] In the formula, QX represents the cleaning effect coefficient of the sapphire substrate wafer, a and b respectively represent the metal residue influence proportion coefficient and the stain residue influence proportion coefficient, and a + b = 1;

[0084] S33. Obtain the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history.

[0085] As a preferred technical solution of the present invention, step S4 further improves the accuracy and reliability of the cleaning effect evaluation by constructing a cleaning effect prediction model for the sapphire substrate wafer. The cleaning effect prediction model for the sapphire substrate wafer is trained by a large amount of historical data and can accurately predict the cleaning effect coefficient of the wafer to be cleaned. In this embodiment, by inputting the relevant data of the sapphire substrate wafer to be cleaned, the prediction result of the cleaning effect of the sapphire substrate wafer to be cleaned can be quickly obtained, so as to help technicians adjust the cleaning strategy in time and optimize the cleaning process. In this embodiment, step S4 includes the following specific steps:

[0086] S41. Obtain the sapphire substrate wafer sample data for training the sapphire substrate wafer cleaning effect prediction model. The sapphire substrate wafer sample data includes the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history, and also includes the surface areas of multiple sapphire substrate wafers in history, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data. Among them, the preset cleaning parameter data includes the preset cleaning time, the preset cleaning solution temperature, and the preset cleaning solution pH value.

[0087] S42. Divide the sapphire substrate wafer sample data for training the sapphire substrate wafer cleaning effect prediction model into a wafer sample training set and a wafer sample test set, construct a regression network model. Take the surface area of the sapphire substrate wafer, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data in the wafer sample training set as the input of the regression network model, and take the cleaning effect coefficient of the sapphire substrate wafer in the wafer sample training set as the output of the regression network model. Train the regression network model to obtain an initial regression network model. Use the mean squared error algorithm to evaluate the model effect of the initial regression network model, and select the corresponding initial regression network model greater than or equal to the preset evaluation value as the sapphire substrate wafer cleaning effect prediction model.

[0088] S43. Obtain the surface area of the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data. Input the surface area of the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data into the sapphire substrate wafer cleaning effect prediction model, and output the predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned.

[0089] As a preferred technical solution of the present invention, step S5 includes the following specific contents:

[0090] Obtain the cleaning effect coefficient of the sapphire substrate wafer to be cleaned obtained by prediction, and preset the cleaning effect threshold. When the cleaning effect coefficient of the sapphire substrate wafer to be cleaned is less than the cleaning effect threshold, send a warning for resetting the preset cleaning parameters to the operator; it should be noted that the value-taking methods of the organic pollutant influence weight, the metal residue influence proportion coefficient, the stain residue influence proportion coefficient, and the cleaning effect threshold are as follows: Obtain the metal residue data, stain residue data, and preset cleaning parameter data of 2000 sapphire substrate wafers, and import the metal residue data, stain residue data, and preset cleaning parameter data into the cleaning effect coefficient calculation formula for calculation to obtain the cleaning effect coefficient; obtain the cleaning effect judgment results of 2000 sapphire substrate wafers, and import the cleaning effect coefficients and cleaning effect judgment results of 2000 sapphire substrate wafers into the fitting software to output the corresponding values of the organic pollutant influence weight, the metal residue influence proportion coefficient, the stain residue influence proportion coefficient, and the cleaning effect threshold that meet the highest cleaning effect judgment accuracy rate.

[0091] Example 2

[0092] As Figure 3 shown, this embodiment provides a cleaning effect evaluation system for sapphire substrate wafers, including:

[0093] A data acquisition module for acquiring the metal residue data and stain residue data of multiple sapphire substrate wafers in history, and simultaneously acquiring the preset cleaning parameter data of multiple sapphire substrate wafers in history;

[0094] A residual cleaning effect analysis module for importing the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; and simultaneously importing the stain residue data into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer;

[0095] A cleaning effect evaluation module for evaluating the cleaning effect of the sapphire substrate wafer according to the metal residue cleaning effect analysis result and the stain residue cleaning effect analysis result;

[0096] A cleaning effect prediction module for constructing a cleaning effect prediction model for the sapphire substrate wafer to be cleaned according to the cleaning effect evaluation result of the sapphire substrate wafer and the preset cleaning parameter data, and used to predict the cleaning effect of the sapphire substrate wafer to be cleaned;

[0097] A cleaning parameter reset module for resetting the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned;

[0098] A control module for controlling the operation of a data acquisition module, a residual cleaning effect analysis module, a cleaning effect evaluation module, a cleaning effect prediction module, and a cleaning parameter reset module.

[0099] For the parameters and the steps of each unit module in the above-mentioned cleaning effect evaluation system for sapphire substrate wafers of the present invention to achieve their corresponding functions, reference can be made to the parameters and steps in the embodiments of the cleaning effect evaluation method for sapphire substrate wafers in the above text, which will not be elaborated herein.

[0100] Embodiment 3

[0101] An electronic device according to an embodiment of the present invention includes: a processor and a memory. Among them, a computer program that can be called by the processor is stored in the memory, and the processor executes the cleaning effect evaluation method for sapphire substrate wafers by calling the computer program stored in the memory. It should be noted that: all computer programs of the cleaning effect evaluation method for sapphire substrate wafers are implemented in the C language. Among them, the data acquisition module, the residual cleaning effect analysis module, the cleaning effect evaluation module, the cleaning effect prediction module, the cleaning parameter reset module, and the control module are all controlled by a remote server.

[0102] Embodiment 4

[0103] This embodiment provides a computer-readable storage medium, on which a rewritable computer program is stored;

[0104] When the computer program runs on a computer device, the computer device is caused to execute the above-mentioned cleaning effect evaluation method for sapphire substrate wafers.

[0105] In the description of this specification, the description with reference to terms such as "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0106] The above-disclosed preferred embodiments of the present invention are only used to help explain the present invention. The preferred embodiments do not elaborate all the details, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and variations can be made according to the content of this specification. The present specification selects and specifically describes these embodiments to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and utilize the present invention well. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. A method for evaluating the cleaning effect of a sapphire substrate wafer, characterized in that, It includes the following steps: S1. Obtain the metal residue data and stain residue data of multiple sapphire substrate wafers in history, and at the same time obtain the preset cleaning parameter data of multiple sapphire substrate wafers in history; S2. Import the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; at the same time, import the stain residue data into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer; S3. Evaluate the cleaning effect of the sapphire substrate wafer according to the analysis results of the metal residue cleaning effect and the stain residue cleaning effect; S4. Construct a cleaning effect prediction model for the sapphire substrate wafer according to the cleaning effect evaluation result of the sapphire substrate wafer and the preset cleaning parameter data, which is used to predict the cleaning effect of the sapphire substrate wafer to be cleaned; S5. Reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned; The step S2 includes the following specific steps: S21. Extract the metal residue data of the sapphire substrate wafer; wherein, the metal residue data includes the metal residue data before cleaning and the metal residue data after cleaning; S22. Import the metal residue data before cleaning and the metal residue data after cleaning of the sapphire substrate wafer into the metal residue cleaning effect coefficient calculation formula to calculate the metal residue cleaning effect coefficient of the sapphire substrate wafer; the metal residue cleaning effect coefficient calculation formula is: ； In the formula, JS represents the metal residue cleaning effect coefficient of the sapphire substrate wafer, G is the mass of the sapphire substrate wafer after cleaning in the metal residue data after cleaning; S represents the surface area of the sapphire substrate wafer; Ai represents the concentration of the i-th residual metal element before cleaning obtained by X-ray fluorescence spectroscopy in the metal residue data before cleaning; Bi represents the concentration of the i-th residual metal element after cleaning obtained by X-ray fluorescence spectroscopy in the metal residue data after cleaning; n represents the number of residual metal elements obtained by X-ray fluorescence spectroscopy, and i is any one of 1 to n.

2. The cleaning effect evaluation method for sapphire substrate wafers according to claim 1, wherein The step S2 also includes the following specific steps: S23. Extract the stain residue data of the sapphire substrate wafer, wherein the stain residue data includes the stain residue data before cleaning and the stain residue data after cleaning; S24. Import the stain residue data before cleaning and the stain residue data after cleaning into the stain residue cleaning effect coefficient calculation formula to calculate the stain residue cleaning effect coefficient of the sapphire substrate wafer; the stain residue cleaning effect coefficient calculation formula is: ； Wherein, WZ represents the cleaning effect coefficient of the stain residue on the sapphire substrate wafer, Sw represents the area of organic pollutants obtained by analyzing the image of the sapphire substrate wafer before cleaning in the stain residue data before cleaning, Swc represents the area of organic pollutants obtained by analyzing the image of the sapphire substrate wafer after cleaning in the stain residue data after cleaning, Nk represents the number of particulate matters attached to the sapphire substrate wafer before cleaning in the stain residue data before cleaning, Nkc represents the number of particulate matters attached to the sapphire substrate wafer after cleaning in the stain residue data after cleaning, wherein, represents the influence weight of organic pollutants, .

3. The cleaning effect evaluation method for sapphire substrate wafers according to claim 2, wherein The step S3 includes the following specific contents: S31. Obtain the calculated metal residue cleaning effect coefficient and stain residue cleaning effect coefficient of the sapphire substrate wafer; S32. Import the metal residue cleaning effect coefficient and the stain residue cleaning effect coefficient into the cleaning effect coefficient calculation formula to calculate the cleaning effect coefficient of the sapphire substrate wafer; the cleaning effect coefficient calculation formula is: ； Wherein, QX represents the cleaning effect coefficient of the sapphire substrate wafer, a and b respectively represent the proportion coefficient of the influence of metal residue and the proportion coefficient of the influence of stain residue, and a + b = 1; S33. Obtain the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history.

4. The cleaning effect evaluation method for sapphire substrate wafers according to claim 3, characterized in that The step S4 includes the following specific steps: S41. Obtain the sapphire substrate wafer sample data for training the sapphire substrate wafer cleaning effect prediction model. The sapphire substrate wafer sample data includes the calculated cleaning effect coefficients of multiple sapphire substrate wafers in history, and also includes the surface areas of multiple sapphire substrate wafers in history, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data; wherein, the preset cleaning parameter data includes the preset cleaning time, the preset cleaning solution temperature, and the preset cleaning solution pH value; S42. Divide the sapphire substrate wafer sample data for training the sapphire substrate wafer cleaning effect prediction model into a wafer sample training set and a wafer sample test set, construct a regression network model, use the surface area of the sapphire substrate wafer, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data in the wafer sample training set as the input of the regression network model, use the cleaning effect coefficient of the sapphire substrate wafer in the wafer sample training set as the output of the regression network model, and train the regression network model to obtain an initial regression network model; use the average error algorithm to evaluate the model effect of the initial regression network model, and select the corresponding initial regression network model greater than or equal to the preset evaluation value as the sapphire substrate wafer cleaning effect prediction model; S43. Obtain the surface area of the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data, input the surface area of the sapphire substrate wafer to be cleaned, the metal residue data before cleaning, the stain residue data before cleaning, and the preset cleaning parameter data into the sapphire substrate wafer cleaning effect prediction model, and output the predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned.

5. The cleaning effect evaluation method for sapphire substrate wafers according to claim 4, wherein, The step S5 includes the following specific content: Obtain the predicted cleaning effect coefficient of the sapphire substrate wafer to be cleaned, preset a cleaning effect threshold, and when the cleaning effect coefficient of the sapphire substrate wafer to be cleaned is less than the cleaning effect threshold, send a warning for resetting the preset cleaning parameters to the operator.

6. A cleaning effect evaluation system for sapphire substrate wafers, which is implemented based on the cleaning effect evaluation method for sapphire substrate wafers described in any one of claims 1-5, characterized in that, The system includes: A data acquisition module, configured to acquire the metal residue data and stain residue data of multiple sapphire substrate wafers in history, and at the same time acquire the preset cleaning parameter data of multiple sapphire substrate wafers in history; A residual cleaning effect analysis module, configured to import the metal residue data into the metal residue cleaning effect analysis model to analyze the metal residue cleaning effect of the sapphire substrate wafer; at the same time, import the stain residue data into the stain residue cleaning effect analysis model to analyze the stain residue cleaning effect of the sapphire substrate wafer; A cleaning effect evaluation module, configured to evaluate the cleaning effect of the sapphire substrate wafer according to the metal residue cleaning effect analysis result and the stain residue cleaning effect analysis result; A cleaning effect prediction module, configured to construct a cleaning effect prediction model for a sapphire substrate wafer based on the cleaning effect evaluation result of the sapphire substrate wafer and preset cleaning parameter data, and used to predict the cleaning effect of the sapphire substrate wafer to be cleaned; A cleaning parameter resetting module, configured to reset the preset cleaning parameters of the sapphire substrate wafer according to the cleaning effect prediction result of the sapphire substrate wafer to be cleaned; A control module, configured to control the operation of the data acquisition module, the residual cleaning effect analysis module, the cleaning effect evaluation module, the cleaning effect prediction module and the cleaning parameter resetting module.

7. An electronic device, comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; characterized in that the processor executes the cleaning effect evaluation method for a sapphire substrate wafer according to any one of claims 1-5 by calling the computer program stored in the memory.

8. A computer-readable storage medium, characterized in that, Stored with instructions, when the instructions run on a computer, the computer is caused to execute the cleaning effect evaluation method for a sapphire substrate wafer according to any one of claims 1-5.

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