Power semiconductor packaging device and power control method

Abstract

The present application discloses a power semiconductor packaging device and a power control method. The power semiconductor packaging device includes a substrate; a semiconductor chip; a heat pipe which includes an evaporation side, a condensation side, and a pressure detection channel. The evaporation side is in thermal contact with the second surface. A liquid storage cavity for storing a cooling medium is provided inside the heat pipe. The pressure detection channel is disposed on the condensation side and is communicated with the liquid storage cavity; a radiator, connected to the condensation side; a pressure detection device, including a pressure detection member and a distance detection sensor. The pressure detection member is disposed in the pressure detection channel and can reciprocate along the extending direction of the pressure detection channel. The distance detection sensor is disposed facing the pressure detection member for detecting the distance from the pressure detection member. According to the present invention, the working power of the power semiconductor chip can be adjusted by the pressure detection device, so as to avoid too high internal pressure and affect the heat dissipation efficiency while ensuring the efficient operation of the heat pipe.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and particularly relates to a power semiconductor packaging device and a power control method. Background Art

[0002] With the development of electronic devices towards high power and high density, especially the application of power semiconductor devices, the heat dissipation problem of power semiconductors has become increasingly prominent. A large amount of heat is generated during the operation of power semiconductors. If the heat cannot be dissipated in a timely and effective manner, it may cause the device to overheat, reduce the working efficiency of the device, and even damage the device. Therefore, how to effectively conduct thermal management in power semiconductor packaging has become an important research direction in semiconductor packaging technology.

[0003] Most existing power semiconductor packaging solutions reduce the working temperature of power semiconductors by using heat-conducting materials. However, with the increase in power density, traditional heat dissipation methods often cannot meet the growing heat dissipation requirements, especially in application scenarios where high-efficiency heat dissipation and limited space are required.

[0004] To solve these problems, recently, a heat dissipation technology based on a heat spreader has emerged. This technology quickly spreads heat to a larger area through the heat spreader, thereby improving the heat dissipation efficiency. However, existing heat spreader solutions mostly rely on simple heat conduction or heat dissipation devices, and do not fully consider the impact of pressure changes inside the heat spreader on the cooling system, nor do they provide effective pressure detection means. When the heat spreader is overloaded, real-time monitoring and adjustment cannot be performed. Summary of the Invention

[0005] The present application provides a power semiconductor packaging device and a power control method to overcome the problem in the prior art that real-time monitoring and adjustment cannot be performed when the heat spreader is overloaded.

[0006] The present application solves the above technical problems through the following technical solutions:

[0007] A power semiconductor packaging device, comprising:

[0008] A substrate;

[0009] A semiconductor chip, including a first surface and a second surface opposite to the first surface, the first surface being mounted on the substrate;

[0010] A heat spreader, including an evaporation side, a condensation side, and a pressure detection channel, the evaporation side being in thermal contact with the second surface, a liquid storage cavity for storing a cooling medium being provided inside the heat spreader, the cooling medium being configured to evaporate when heated on the evaporation side and condense when cooled on the condensation side, the pressure detection channel being provided on the condensation side and communicating with the liquid storage cavity;

[0011] A heat sink, connected to the condensation side;

[0012] A pressure detection device, including a pressure detection element and a distance detection sensor. The pressure detection element is arranged in the pressure detection channel and can reciprocate along the extension direction of the pressure detection channel. The distance detection sensor is arranged facing the pressure detection element for detecting the distance from the pressure detection element. The pressure detection element is configured such that when the pressure inside the heat pipe increases, the pressure detection element moves outward along the extension direction of the pressure detection channel, and when the pressure of the heat pipe decreases, the pressure detection element moves inward along the extension direction of the pressure detection channel.

[0013] A power control method for a power semiconductor packaging device, including the power semiconductor packaging device as described above. The power control method includes:

[0014] Obtaining the detection value of the distance detection sensor;

[0015] When the detection value decreases, reducing the power of the chip.

[0016] The positive and progressive effects of the present application are as follows: By introducing a heat dissipation design that combines a heat pipe and a cooling medium in the power semiconductor packaging device, the present application can efficiently conduct heat from the semiconductor chip to the cooling medium and achieve heat dissipation. In particular, the pressure detection device can monitor the internal pressure change of the heat pipe in real time and feedback the pressure state in cooperation with the distance detection sensor. When the pressure increases, the pressure detection element moves upward, and the distance detected by the distance detection sensor becomes smaller. This pressure state information can be used to adjust the operating power of the power semiconductor chip, thereby avoiding overheating or overloading while ensuring the efficient operation of the heat sink and optimizing the working environment of the semiconductor chip. Through this intelligent dynamic adjustment mechanism, the present invention not only improves the heat dissipation efficiency, but also enhances the accuracy of power adjustment and the reliability of the system, thereby extending the service life of the power semiconductor device. Description of the Drawings

[0017] Figure 1 It is a schematic structural diagram of the first state of a power semiconductor packaging device according to an embodiment of the present application;

[0018] Figure 2 It is a schematic structural diagram of the second state of a power semiconductor packaging device according to an embodiment of the present application.

[0019] Description of the reference numerals:

[0020] Substrate 100; semiconductor chip 200; first surface 210; second surface 220; heat pipe 300; evaporation side 310; condensation side 320; liquid storage cavity 330; pressure detection channel 340; heat sink 400; pressure detection component 410; fixing component 420; elastic component 430; distance detection sensor 440; limiting component 450; limit switch 460. Detailed implementation manners

[0021] The present application will be further described below by way of embodiments, but the present application is not limited to the scope of these embodiments.

[0022] As Figure 1 shown, this embodiment provides a power semiconductor packaging device, which includes a substrate 100, a semiconductor chip 200, a heat pipe 300, a heat sink 400, and a pressure detection device. The semiconductor chip 200 includes a first surface 210 and a second surface 220 opposite to the first surface 210, and the first surface 210 is mounted on the substrate 100. The heat pipe 300 includes an evaporation side 310, a condensation side 320, and a pressure detection channel 340. The evaporation side 310 is in thermal contact with the second surface 220. A liquid storage cavity 330 for storing a cooling medium is provided inside the heat pipe 300. The cooling medium is configured to evaporate when heated on the evaporation side 310 and condense when cooled on the condensation side 320. The pressure detection channel 340 is provided on the condensation side 320 and communicates with the liquid storage cavity 330. The pressure in the pressure detection channel 340 is the same as the pressure in the liquid storage cavity 330. The heat sink 400 is connected to the condensation side 320. The pressure detection device includes a pressure detection component 410 and a distance detection sensor 440. The pressure detection component 410 is disposed in the pressure detection channel 340 and can reciprocate along the extending direction of the pressure detection channel 340. The distance detection sensor 440 is disposed facing the pressure detection component 410 for detecting the distance from the pressure detection component 410. The pressure detection component 410 is configured such that when the internal pressure of the heat pipe 300 increases, the pressure detection component 410 moves outward along the extending direction of the pressure detection channel 340, and when the pressure of the heat pipe 300 decreases, the pressure detection component 410 moves inward along the extending direction of the pressure detection channel 340.

[0023] In this application, by introducing a heat dissipation design that combines a vapor chamber 300 and a cooling medium in a power semiconductor packaging device, heat can be efficiently conducted from the semiconductor chip 200 to the cooling medium to achieve heat dissipation. In particular, the pressure detection device can monitor the internal pressure change of the vapor chamber 300 in real time and feedback the pressure state in cooperation with the distance detection sensor 440. When the pressure increases, the pressure detection component 410 moves upward, and the distance detected by the distance detection sensor 440 becomes smaller. When the pressure decreases, the pressure detection component 410 moves downward, and the distance detected by the distance detection sensor 440 becomes larger. This pressure state information can be used to adjust the operating power of the power semiconductor chip 200, so as to ensure the efficient operation of the vapor chamber 300 while avoiding excessive internal pressure and affecting the heat dissipation efficiency, which is beneficial to optimizing the working environment of the semiconductor chip 200. Through this intelligent dynamic adjustment mechanism, this application also enhances the accuracy of power adjustment and the reliability of the system, thereby extending the service life of the power semiconductor device.

[0024] In some embodiments, the power semiconductor packaging device may further include an air cooling unit or a water cooling unit, and the pressure state information feedback by the pressure detection device can also be used to adjust the operating state of the air cooling unit or the water cooling unit. For example, the air cooling unit or the water cooling unit is connected to the radiator 400 and is used to dissipate heat from the radiator 400. The heat dissipation method of the power semiconductor packaging device includes: obtaining the value feedback by the pressure detection device (i.e., the value detected by the distance sensor), if the value is greater than the first preset value, then start the air cooling unit or the water cooling unit; if the value is less than the first preset value, then turn off the air cooling unit or the water cooling unit.

[0025] In this embodiment, the pressure detection device further includes an elastic member 430 and a fixing member 420. The fixing member 420 is disposed outside the pressure detection channel 340. The middle part of the radiator 400 includes an installation area, and the pressure detection device is disposed in the installation area. The fixing member 420 is connected to the radiator 400 to achieve fixation. The pressure detection member 410 is connected to the fixing member 420 through the elastic member 430. The pressure detection device is configured such that when the internal pressure of the vapor chamber 300 increases, the pressure detection member 410 moves outward along the extending direction of the pressure detection channel 340 and compresses the elastic member 430. When the pressure of the vapor chamber 300 decreases, the elastic member 430 pushes the pressure detection member 410 to move inward along the extending direction of the pressure detection channel 340. By introducing the design of the elastic member 430 and the fixing member 420 in the pressure detection device, the present application further enhances the accuracy of pressure detection. When the internal pressure of the vapor chamber 300 increases, the pressure detection member 410 will move outward along the pressure detection channel 340 and compress the elastic member 430. When the pressure decreases, the elastic member 430 will push the pressure detection member 410 to move inward along the pressure detection channel 340. This structural design enables the pressure detection member 410 to better respond to pressure changes and maintain stable resilience characteristics, thereby improving the reliability of pressure monitoring. This solution can more accurately detect changes in the internal pressure and further optimize the working efficiency of the radiator 400 and the performance of the power semiconductor packaging device by feedback regulating the power of the chip. Specifically, the elastic member 430 can be a spring.

[0026] In some embodiments, the pressure detection device further includes a limiting member 450. The limiting member 450 is disposed at the maximum stroke of the moving path of the pressure detection member 410. The limiting member 450 is configured such that when the internal pressure of the vapor chamber 300 increases and the pressure detection member 410 moves outward to the maximum stroke along the extending direction of the pressure detection channel 340, the limiting member 450 prevents the pressure detection member 410 from continuing to move outward.

[0027] The limiting member 450 is disposed at the maximum stroke of the pressure detection member 410, which can effectively prevent the pressure detection member 410 from continuing to move outward when the internal pressure of the vapor chamber 300 increases, avoiding excessive movement of the pressure detection member 410. This design ensures the mechanical stability and reliability of the pressure detection device, and also prevents system failures or performance degradation caused by excessive pressure. The function of the limiting member 450 enables the entire pressure detection system to have higher pressure resistance and a longer service life.

[0028] In some embodiments, the pressure detection device further includes a limit switch 460 disposed on the moving path of the pressure detection member 410. The limit switch 460 is configured to: when the pressure inside the heat sink 300 increases, when the pressure detection member 410 moves outward along the extending direction of the pressure detection channel 340 to the maximum stroke, the pressure detection member 410 triggers the limit switch 460. Specifically, the limit switch 460 is disposed on the limiting member 450. In some embodiments, the limit switch 460 may not be disposed on the limiting member 450, and may also be disposed at other positions at the same height as the limiting member 450 according to needs.

[0029] The present invention further improves the system safety by adding the design of the limit switch 460 in the pressure detection device. As shown in Figure 2, when the pressure inside the heat sink 300 increases, the pressure detection member 410 will move outward along the pressure detection channel 340 until it reaches the maximum stroke and triggers the limit switch 460. The triggering of the limit switch 460 can provide an additional feedback signal for the system to further adjust the operating power of the chip, preventing the chip from being damaged due to overload or overheating. This solution enhances the stability and safety of the power semiconductor packaging device by providing an additional protection mechanism, effectively extending the service life of the power semiconductor packaging device.

[0030] In some embodiments, the power semiconductor packaging device further includes an alarm unit, which is connected in series with the limit switch 460. When the limit switch 460 is triggered, the alarm unit is activated. The present invention further improves the system safety and real-time monitoring ability by adding the design of the alarm unit in the pressure detection device. When the limit switch 460 is triggered, the alarm unit will be immediately activated to emit an alarm signal, reminding the user or system administrator that the pressure inside the heat sink 300 has reached the preset maximum value or there is a potential abnormal risk.

[0031] In this embodiment, the distance detection sensor 440 is an infrared ranging sensor or a laser ranging sensor.

[0032] In this embodiment, the cooling medium includes a water-ethylene glycol mixture or diethyl ether.

[0033] This embodiment also provides a power control method for a power semiconductor packaging device, which includes the above power semiconductor packaging device. The power control method includes:

[0034] S10. Obtain the detection value of the distance detection sensor.

[0035] S20. When the detection value decreases, reduce the power of the chip.

[0036] The power control method of this application realizes the adjustment of the power of the power semiconductor chip by obtaining the detection value of the distance detection sensor in real time and monitoring the change of the internal pressure of the heat sink. When the detection value decreases, it indicates that the internal pressure of the heat sink increases, and the system will automatically reduce the working power of the chip to avoid overheating or equipment damage caused by excessive internal pressure. Through this dynamic adjustment mechanism, the working power of the power semiconductor chip can be optimized under the condition of pressure change, preventing the heat dissipation pressure brought by excessive power output.

[0037] Furthermore, the power control method of the power semiconductor packaging device further includes stopping the power supply to the chip when the limit switch is triggered.

[0038] The power control method of the present invention realizes the protection of the chip by automatically stopping the power supply to the chip when the limit switch is triggered. When the internal pressure of the heat sink is too high and the limit switch is triggered, the system immediately takes the measure of stopping the power supply to prevent the chip from continuing to work in an ultra-high pressure and overheated environment, and preventing the chip from being damaged by heat or other safety problems.

[0039] Furthermore, the power control method of the power semiconductor packaging device further includes the alarm unit alarming when the limit switch is triggered.

[0040] This application further adds the design of the alarm unit when the limit switch is triggered, which can issue an alarm in time when the pressure is too high. When the limit switch is triggered, it indicates that the internal pressure of the heat sink has reached or exceeded the safety threshold, and the alarm unit will immediately start and issue an alarm, prompting the operator or the automatic control system to take further measures. This design greatly enhances the safety and monitorability of the system, enabling abnormal situations to be responded to in time, and preventing equipment failures or damages caused by excessive pressure. The addition of the alarm unit can not only provide fault warnings, but also help maintenance personnel or the automatic control system quickly locate problems and take corresponding corrective measures. Through timely alarming, the system can perform preventive interventions before a failure occurs, further improving the operation reliability and safety of the power semiconductor packaging device.

[0041] Although the specific implementation manners of this application are described above, those skilled in the art should understand that this is only an example, and the protection scope of this application is defined by the appended claims. Without departing from the principles and essence of this application, those skilled in the art can make various changes or modifications to these implementation manners, but these changes and modifications all fall within the protection scope of this application. In addition, certain features, structures, or characteristics in one or more embodiments of this application can be appropriately combined.

Claims

1. A power semiconductor packaging device, characterized in that: It includes: substrate; a semiconductor chip comprising a first surface and a second surface opposite to the first surface, wherein the first surface is mounted on the substrate; A vapor chamber, comprising an evaporation side, a condensation side and a pressure detection channel, wherein the evaporation side is in thermal contact with the second surface, a liquid storage chamber for storing a cooling medium is provided inside the vapor chamber, the cooling medium is configured to evaporate when heated on the evaporation side and condense when cooled on the condensation side, and the pressure detection channel is provided on the condensation side and communicated with the liquid storage chamber; A radiator connected to the condensation side; The pressure detection device comprises a pressure detection member and a distance detection sensor, wherein the pressure detection member is arranged in the pressure detection channel and can reciprocate along the extension direction of the pressure detection channel, the distance detection sensor is arranged toward the pressure detection member and is used to detect the distance from the pressure detection member, and the pressure detection member is configured such that when the internal pressure of the heat spreader increases, the pressure detection member moves outward along the extension direction of the pressure detection channel, and when the pressure of the heat spreader decreases, the pressure detection member moves inward along the extension direction of the pressure detection channel; The detection value of the distance detection sensor is acquired in real time, and when the detection value decreases, the power of the semiconductor chip is reduced.

2. The power semiconductor package device according to claim 1, characterized in that: The pressure detection device also includes an elastic member and a fixing member, wherein the fixing member is arranged on the outside of the pressure detection channel, and the pressure detection member is connected to the fixing member via the elastic member. The pressure detection device is configured as follows: when the internal pressure of the heat spreader increases, the pressure detection member moves outward along the extension direction of the pressure detection channel and compresses the elastic member; when the pressure of the heat spreader decreases, the elastic member pushes the pressure detection member to move inward along the extension direction of the pressure detection channel.

3. The power semiconductor package device according to claim 1 or 2, characterized in that: The pressure detection device also includes a limit switch, which is arranged on the moving path of the pressure detection component. The limit switch is configured such that when the internal pressure of the heat sink increases, the pressure detection component moves outward along the extension direction of the pressure detection channel to a maximum stroke, and the pressure detection component triggers the limit switch.

4. The power semiconductor package device according to claim 1 or 2, characterized in that: The pressure detection device also includes a limit member, which is arranged at the maximum stroke of the moving path of the pressure detection member. The limit member is configured as follows: when the internal pressure of the heat sink increases, when the pressure detection member moves outward along the extension direction of the pressure detection channel to the maximum stroke, the limit member prevents the pressure detection member from continuing to move outward.

5. The power semiconductor package device according to claim 3, characterized in that: It also includes an alarm unit, which is connected in series with the limit switch. When the limit switch is triggered, the alarm unit is activated.

6. The power semiconductor package device according to claim 1, characterized in that: The distance detection sensor is an infrared distance measuring sensor or a laser distance measuring sensor.

7. The power semiconductor package device according to claim 1, characterized in that: The cooling medium includes a water-ethylene glycol mixture or diethyl ether.

8. A power control method for a power semiconductor package device, characterized in that: The power semiconductor package device according to any one of claims 3 to 7, wherein the power control method comprises: When the limit switch is triggered, power supply to the semiconductor chip is stopped.

9. The power control method of a power semiconductor package device according to claim 8, characterized in that: The invention also includes an alarm unit that sounds an alarm when the limit switch is triggered.

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