Intelligent electronic switch, integrated circuit chip, chip product and automobile
By introducing a bypass switch and a current-limiting drive unit into the intelligent electronic switch, the operating mode is switched to reduce current and power consumption, thus solving the problem of high power consumption of the intelligent electronic switch and achieving lower self-power consumption and higher reliability.
Patent Information
- Application Number
- CN202411557364.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-01
- Publication Date
- 2025-10-24
- Estimated Expiration
- 2044-11-01
Smart Images

Figure CN119483557B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of intelligent semiconductor switch, in particular to an intelligent electronic switch, an integrated circuit chip, a chip product and an automobile. BACKGROUND
[0002] The intelligent electronic switch is usually used for coupling a load and a battery, is an electronic element for controlling the on-off of a load line, and is widely applied in the fields of automobile electronics, industrial automation, medical equipment and the like. Since the load types connected by the intelligent electronic switch are various and the working environment is harsh, the reliability of the intelligent electronic switch is particularly required by the application end. Therefore, various protection functions are integrated in the intelligent electronic switch to improve the reliability of the intelligent electronic switch.
[0003] In the prior art, when the intelligent electronic switch has a load current output, in order to ensure the reliability of the intelligent electronic switch, the driving circuit and the protection circuit integrated in the intelligent electronic switch are normally operated, which will result in relatively large power consumption of the intelligent electronic switch, thereby causing the problem of large power consumption of the device using the intelligent electronic switch. SUMMARY
[0004] The present application provides an intelligent electronic switch, an integrated circuit chip, a chip product and an automobile to solve the problem of large power of the intelligent electronic switch.
[0005] In a first aspect, the present application provides an intelligent electronic switch, comprising a power supply end, a power ground end, a load output end, a switch circuit and a control circuit; the power supply end and the power ground end are used for connecting with a battery, and the load output end is used for connecting with a load;
[0006] The switch circuit comprises a main power switch and a bypass switch, the control circuit comprises a logic control unit, a first driving unit and a current limiting driving unit, a first end of the main power switch and a first end of the bypass switch are connected with the power supply end or the power ground end, a second end of the main power switch and a second end of the bypass switch are connected with the load output end, a control end of the main power switch is connected with the first driving unit, a control end of the bypass switch is connected with the current limiting driving unit, and the first driving unit and the current limiting driving unit are further connected with the logic control unit.
[0007] The intelligent electronic switch works in a normal mode, and the logic control unit drives the main power switch to be turned on via the first driving unit; in a bypass mode, the logic control unit controls the bypass switch to be turned on via the current-limiting driving unit and controls the main power switch to be turned off via the first driving unit; the bypass switch occupies an area smaller than that of the main power switch, and a current value flowing through the bypass switch in the bypass mode is smaller than or equal to a first current-limiting value set by the current-limiting driving unit, and the first current-limiting value is smaller than a maximum current value flowing through the main power switch in the normal mode.
[0008] Optionally, the intelligent electronic switch further comprises an overcurrent protection unit connected to the logic control unit, the overcurrent protection unit accesses a preset overcurrent protection threshold value, and the overcurrent protection unit further accesses a current sampling value, and the current sampling value is used to represent a current value flowing through the main power switch.
[0009] In the normal mode, when the current sampling value is greater than the overcurrent protection threshold value, the current flowing through the main power switch is greater than the first current-limiting value, and the overcurrent protection unit outputs an overcurrent signal to the first driving unit, and the first driving unit controls the main power switch to be turned off; in the bypass mode, the overcurrent protection unit stops working.
[0010] Optionally, the intelligent electronic switch further comprises a current-limiting protection unit connected to the logic control unit, the current-limiting protection unit accesses a preset current-limiting protection threshold value, and the current-limiting protection unit further accesses a current sampling value, and the current sampling value is used to represent a current value flowing through the main power switch.
[0011] In the normal mode, when the current sampling value is greater than the current-limiting protection threshold value, the current flowing through the main power switch is greater than the first current-limiting value, and the current-limiting protection unit outputs a current-limiting signal to the logic control unit, so that the logic control unit adjusts the size of a control signal output to a control terminal of the main power switch via the first driving unit, so as to reduce the current flowing through the main power switch, so that the current sampling value is smaller than or equal to the current-limiting protection threshold value; in the bypass mode, the current-limiting protection unit stops working.
[0012] Optionally, the intelligent electronic switch further comprises a first over-temperature protection unit, a second over-temperature protection unit and a third over-temperature protection unit connected to the logic control unit.
[0013] The first over-temperature protection unit accesses a preset first over-temperature protection threshold and a first temperature sampling value, the first temperature sampling value being used to represent the temperature of the main power switch; the second over-temperature protection unit accesses a preset second over-temperature protection threshold and a second temperature sampling value, the second temperature sampling value being used to represent the temperature of the bypass switch; the third over-temperature protection unit accesses a preset third over-temperature protection threshold and a temperature difference value, the temperature difference value being the difference between the temperature sampling value of the main power switch and the ambient temperature.
[0014] In the normal working mode, the logic control unit controls the first over-temperature protection unit and the third over-temperature protection unit to work, when the first temperature sampling value is greater than the first over-temperature protection threshold, the first over-temperature protection unit outputs a first over-temperature signal, and / or, when the temperature difference value is greater than the third over-temperature protection threshold, the third over-temperature protection unit outputs a first over-temperature signal, the logic control unit controls the main power switch to be turned off via the first driving unit according to the first over-temperature protection signal.
[0015] In the bypass mode, the logic control unit controls the first over-temperature protection unit and the third over-temperature protection unit to stop working and controls the second over-temperature protection unit to work, when the second temperature sampling value is greater than the second over-temperature protection threshold, the second over-temperature protection unit outputs a second over-temperature signal, so that the logic control unit controls the bypass switch to be turned off via the current-limiting driving unit; wherein the power consumption of the second over-temperature protection unit is less than the power consumption of the first over-temperature protection unit.
[0016] Optionally, the current-limiting driving unit comprises a transistor and a constant current source, the transistor and the bypass switch are of the same type.
[0017] The transistor and the constant current source are connected to form a current-limiting driving branch, one end of the current-limiting driving branch is connected with one end of the bypass switch, the other end thereof is connected with the power supply terminal or the power ground terminal, and the control end thereof is connected with the logic control unit, the drain of the transistor and the control end of the transistor and the control end of the bypass switch are connected; in the bypass mode, the logic control unit controls the current-limiting driving branch to be turned on, so that the current-limiting driving unit works, and the first current-limiting value is related to the current value provided by the constant current source and the current mirror ratio of the transistor and the power switch.
[0018] As an example, the transistor and the bypass switch are both N-type switch tubes, one end of the constant current source is connected with the power supply terminal and the other end thereof is connected with the drain of the transistor, the source of the transistor and the source of the bypass switch are connected and are both connected with the load output terminal or the power ground terminal.
[0019] As another example, the transistor and the bypass switch are both P-type switch tubes, one end of the constant current source is connected with the power supply ground end or the load output end, and the other end of the constant current source is connected with the drain of the transistor, the source of the transistor and the source of the bypass switch are connected and connected with the power supply power supply end or the load output end.
[0020] Optionally, the bypass switch comprises a MOS tube, and a ratio of the first current limiting value to a current value provided by the constant current source is equal to a ratio of a width-length ratio of the bypass switch to a width-length ratio of the transistor.
[0021] Optionally, in the normal working mode, the main power switch tube is turned on and works in a linear resistance region, and in the bypass mode, the bypass switch is turned on and works in a saturation region.
[0022] Optionally, when the main power switch is an N-type switch tube, the first driving unit comprises a boost module and a driving module, the boost module is connected with a power supply end of the driving module, and the boost module is used to make an output voltage thereof greater than a voltage of a power supply power supply end, so that the driving module drives the main power switch to be turned on in the normal working mode.
[0023] In a second aspect, an embodiment of the present application provides an integrated circuit chip comprising the intelligent electronic switch as described in the first aspect, wherein the power supply end is a power supply pin, the power supply ground end is a power supply ground pin, and the load output end is a load output pin.
[0024] In a third aspect, an embodiment of the present application provides a chip product comprising the intelligent electronic switch as described in the first aspect, wherein elements of the intelligent electronic switch except the main power switch are located on a first integrated circuit chip, and the main power switch is located on a second integrated circuit chip.
[0025] In a third aspect, an embodiment of the present application provides a chip product comprising the intelligent electronic switch as described in the first aspect, wherein elements of the intelligent electronic switch except the main power switch are located on a first integrated circuit chip, and the main power switch is located on a second integrated circuit chip.
[0026] In a fourth aspect, an embodiment of the present application provides a chip product comprising the intelligent electronic switch as described in the first aspect, wherein elements of the intelligent electronic switch except the main power switch and the bypass switch are located on a first integrated circuit chip, and the main power switch and the bypass switch are located on a second integrated circuit chip.
[0027] The power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.
[0028] In a fifth aspect, the embodiments of the present application provide an automobile, which comprises the intelligent electronic switch according to the first aspect, or the integrated circuit chip according to the second aspect, or the chip product according to the third aspect or the fourth aspect.
[0029] The automobile further comprises a battery, a load and a microcontroller, wherein a positive electrode of the battery is connected to the power supply end, a negative electrode of the battery is connected to the power ground end, one end of the load is connected to the load output end, the other end of the load is connected to the power ground end or the power supply end, and the microcontroller is connected to the intelligent electronic switch.
[0030] The intelligent electronic switch, the integrated circuit chip, the chip product and the automobile provided by the present application have the following advantages: the control circuit of the intelligent electronic switch comprises a logic control unit, a first driving unit and a current-limiting driving unit, and the switch circuit comprises a main power switch and a bypass switch; in a normal working mode, the logic control unit drives the main power switch to be turned on via the first driving unit; in a bypass mode, the logic control unit controls the bypass switch to be turned on via the current-limiting driving unit and controls the main power switch to be turned off via the first driving unit; the area occupied by the bypass switch is smaller than the area occupied by the main power switch; in the bypass mode, the current flowing through the bypass switch is smaller than or equal to a first current-limiting value set by the current-limiting driving unit, and the first current-limiting value is smaller than the maximum current flowing through the main power switch in the normal working mode. In this way, when the vehicle is in a parking mode and the load connected to the intelligent electronic switch is light, the intelligent electronic switch does not need to provide a large load current and can work normally in a small current mode, so that the intelligent electronic switch can be controlled to work in the bypass mode, and at this time, the current-limiting driving unit can also drive the power switch to work. Since the power consumption of the current-limiting driving unit when working is smaller than the power consumption of the first driving unit when working, the self-consumption power of the intelligent electronic switch in the bypass mode is smaller than the self-consumption power of the intelligent electronic switch in the normal working mode. Moreover, in the embodiments, the bypass circuit and the main circuit do not interfere with each other when operating, the added bypass circuit does not affect the original main circuit, and the performance stability and reliability of the intelligent electronic switch are ensured. BRIEF DESCRIPTION OF DRAWINGS
[0031] The accompanying drawings, which are incorporated herein and form a part of the specification, illustrate embodiments consistent with the present application and, together with the description, further serve to explain the principles of the application.
[0032] Figure 1is a circuit module schematic diagram of an electronic device provided by a first embodiment of the present application;
[0033] Figure 2 is a circuit module schematic diagram of an electronic device provided by a second embodiment of the present application;
[0034] Figure 3 is a circuit module schematic diagram of an electronic device provided by a third embodiment of the present application;
[0035] Figure 4 is a circuit module schematic diagram of an electronic device provided by a fourth embodiment of the present application;
[0036] Figure 5 is a circuit structure schematic diagram of an electronic device provided by a fifth embodiment of the present application.
[0037] The specific embodiments of the present application have been shown through the above-mentioned drawings, and will be described in more detail hereinafter. These drawings and the written description are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION
[0038] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without any creative work fall within the scope of protection of the present application.
[0039] The terms “comprise” and “have” and any variations thereof that appear in the specification, claims and drawings of the present application are intended to cover the inclusions not exclusively. For example, a process, method, system, product or device comprising a series of steps or modules is not limited to the listed steps or units, but can optionally further comprise steps or units not listed, or can optionally further comprise other steps or units inherent to the process, method, product or device.
[0040] In addition, the terms “first”, “second” and “third” and the like are used to distinguish different objects, and are not used to describe a specific order. The electrical connection of the present application includes direct electrical connection and indirect electrical connection, and the indirect electrical connection means that there can be other electronic components, pins and the like between the two components of the electrical connection. The XX terminal mentioned in the present application can be an actually existing terminal, or can not be an actually existing terminal, for example, only one end of a component or one end of a wire. The “and / or” mentioned in the present application includes three cases, for example, A and / or B includes A, B, A and B.
[0041] With the development of semiconductor technology, relays for turning on or off the load path are gradually replaced by intelligent electronic switches, which can couple the load with the battery and have one or more diagnostic capabilities and protection features, for example, when the intelligent electronic switch is overheated, overloaded or short-circuited, the power switch inside the intelligent electronic switch is turned off to disconnect the path between the battery and the load, thereby improving the reliability of the intelligent electronic switch.
[0042] It can be understood that in actual application, the load type of the intelligent electronic switch is various (such as inductance, capacitance, resistance or a combination of the three) and the working environment is harsh, so the application end has particularly high requirements for its reliability, which makes the intelligent electronic switch need to work in a normal working mode when there is a load current output, and the driving unit for driving the power switch to turn on or off also works normally. Since the driving unit needs to provide a large driving capability according to the load demand to enable the intelligent electronic switch to provide a wide range of output current, the power consumption of the driving unit is usually high, which in turn causes the intelligent electronic switch to have a large self-power consumption problem. Especially when there are many similar intelligent electronic switches in a certain electronic device, such as a car, the overall power consumption of the car is relatively large, which accelerates the consumption of the battery equipped in the car, resulting in a significant reduction in the endurance time of the battery.
[0043] To solve the above problems, the inventors of the present application have made long-term researches and proposed an intelligent electronic switch according to the working characteristics of the intelligent electronic switch. The control circuit of the intelligent electronic switch includes a logic control unit, a first driving unit and a current-limiting driving unit, and the switching circuit includes a main power switch and a bypass switch. Therefore, the intelligent electronic switch works in a normal working mode, the logic control unit drives the main power switch to turn on via the first driving unit, and in a bypass mode, the logic control unit controls the bypass switch to turn on via the current-limiting driving unit and controls the main power switch to turn off via the first driving unit. The area occupied by the bypass switch is smaller than the area occupied by the main power switch, the current value flowing through the bypass switch in the bypass mode is less than or equal to a first current-limiting value set by the current-limiting driving unit, and the first current-limiting value is less than the maximum current value flowing through the main power switch in the normal working mode. In this way, the power consumption of the current-limiting driving unit when working is less than the power consumption of the first driving unit when working, so that the self-consumption of the intelligent electronic switch in the bypass mode is less than the self-consumption of the intelligent electronic switch in the normal working mode. In the present embodiment, the bypass loop and the main loop do not interfere with each other when operating, the newly added bypass does not affect the original main loop, the performance is more stable, and the reliability is high.
[0044] Optionally, the self-consumption power of the intelligent electronic switch in the normal working mode is usually in the order of milliamperes, and the self-consumption power can be reduced to the order of microamperes when the intelligent electronic switch is in the bypass mode, thereby reducing the power consumption of the intelligent electronic switch and prolonging the standby time.
[0045] The technical solutions of the present application and how the technical solutions solve the above technical problems will be described in detail below with specific examples. The following specific examples can be combined with each other, and the same or similar concepts or processes can not be described again in some examples. The embodiments of the present application will be described below with reference to the accompanying drawings.
[0046] The present application provides an electronic device, for example, a car, please see Figure 1 , Figure 1 is a circuit module schematic diagram of the electronic device provided by the first embodiment of the present application. The electronic device includes a battery 10, a load 30, a microcontroller 40 and an intelligent electronic switch 20. Among them, the battery 10 is generally a storage battery, which provides an external voltage of 12V, 24V, 48V, 60V or other size, of course, the battery 10 can also be other types of batteries, such as lithium battery, sodium battery, etc. The load 30 includes at least one of resistive load, inductive load and capacitive load, the resistive load is for example seat adjustment device, auxiliary heating device, window heating device, light emitting diode (LED), rear lighting or other resistive load, the inductive load is for example pump, actuator, motor, anti-lock braking system (ABS), electronic braking system (EBS), fan or other system including inductive load for one or more wiper systems, and the capacitive load is for example lighting element, such as xenon arc lamp. The microcontroller 40 is connected with the intelligent electronic switch 20, and is used for controlling the intelligent electronic switch 20.
[0047] For example, in actual application, the intelligent electronic switch 20 includes a control circuit 21 and a switching circuit 22, so that the control circuit 21 can control the switching circuit 22 to work in different states according to external signals, so that the intelligent electronic switch 20 works in different modes. For example, the intelligent electronic switch 20 can control the switching circuit 22 to turn on when receiving an on control signal, and control the switching circuit 22 to turn off when receiving an off control signal. Moreover, based on the switching state of the switching circuit 22 and the working state of the internal functional circuit, the working mode of the intelligent electronic switch 20 can be divided into normal working mode, bypass mode, standby mode and sleep mode.
[0048] When the switch circuit 22 is in the on-conducting state and the protection and diagnosis function circuits in the intelligent electronic switch 20 are all working normally, the intelligent electronic switch 20 is in a normal working mode or an active mode. In the normal working mode, the intelligent electronic switch 20 can provide a large load current according to the load demand. When the switch circuit 22 is in the on-conducting state but some of the function circuits in the intelligent electronic switch 20 are not working, the intelligent electronic switch 20 is in a bypass mode. The bypass mode can also be referred to as a low-power-consumption mode because the power consumption of the intelligent electronic switch 20 is relatively low in the bypass mode. In the bypass mode, the intelligent electronic switch 20 provides a load current smaller than that in the normal working mode. When the switch circuit 22 is in the off-cutting state but the function circuits in the intelligent electronic switch 20 are all working normally, the intelligent electronic switch 20 is in a standby mode. In the standby mode, the intelligent electronic switch 20 has no load current output but is in a standby state. Once an on control signal is received, the intelligent electronic switch 20 can directly change to the normal working mode. When the switch circuit 22 is in the off-cutting state and the function circuits in the intelligent electronic electronic switch 20 are all not working, the intelligent electronic switch 20 is in a sleep mode. In the sleep mode, the power consumption of the intelligent electronic switch 20 is the lowest.
[0049] It can be understood that the embodiments of the present application are mainly explained in the application scenario in which the switch circuit 22 is in the on-conducting state, and thus the intelligent electronic switch 20 is in the normal working mode or the bypass mode. The difference between the bypass mode and the normal working mode of the intelligent electronic switch 20 mainly lies in the self-consumption of the intelligent electronic switch 20 in the two modes. For example, the difference can be embodied in the working states of the function circuits in the intelligent electronic switch 20, so that the power consumption of the function circuits in the intelligent electronic switch 20 is different, thereby realizing the difference in the self-consumption of the intelligent electronic switch 20.
[0050] The embodiment provides an intelligent electronic switch 20 that can work in the bypass mode and the normal working mode. Referring to the above description Figure 1 As shown in the figure, the intelligent electronic switch 20 can include a power supply end VBAT, a power ground end GND, a load output end OUT, a switch circuit 22, and a control circuit 21.
[0051] The power supply end VBAT and the power ground end GND are used to be connected with the battery 10. Specifically, the power supply end VBAT is connected with the positive electrode of the battery 10, and the power ground end GND is connected with the negative electrode of the battery 10. The load output end OUT is used to be connected with the load 30.
[0052] In the embodiment of the present application, the switching circuit 22 comprises a main power switch Q1 and a bypass switch Q2, and the control circuit 21 comprises a logic control unit 211, a first driving unit 212 and a current-limiting driving unit 213. The first end of the main power switch Q1 and the first end of the bypass switch Q2 are connected to the power supply end VBAT or the power ground end GND, the second end of the main power switch Q1 and the second end of the bypass switch Q2 are connected to the load output end OUT, the control end of the main power switch Q1 is connected to the first driving unit 212, the control end of the bypass switch Q2 is connected to the current-limiting driving unit 213, and the first driving unit 212 and the current-limiting driving unit 213 are both connected to the logic control unit 211. The logic control unit 211 controls the main power switch Q1 to be turned on or turned off via the first driving unit 212, and controls the bypass switch Q2 to be turned on or turned off via the current-limiting driving unit 213. In a possible design, as shown in FIG. 1, one end of the main power switch Q1 and one end of the bypass switch Q2 are connected to the load output end OUT, and the other end of the main power switch Q1 and the other end of the bypass switch Q2 are connected to the power supply end VBAT. At this time, the main power switch Q1 and the bypass switch Q2 are connected as high-side switches, which are switches connected between the power supply end VBAT and the load 30. In other possible designs of the present application, one end of the main power switch Q1 and one end of the bypass switch Q2 are connected to the load output end OUT, and the other end of the main power switch Q1 and the other end of the bypass switch Q2 are connected to the power ground end GND. At this time, the main power switch Q1 and the bypass switch Q2 are connected as low-side switches, which are switches connected between the power ground end GND and the load 30. Figure 1
[0053] As an example, when the intelligent electronic switch 20 works in the normal working mode, the logic control unit 211 drives the main power switch Q1 to be turned on via the first driving unit 212. As another example, when the intelligent electronic switch 20 works in the bypass mode, the logic control unit 211 drives the bypass switch Q2 to be turned on via the current-limiting driving unit 213 and controls the main power switch Q1 to be turned off via the first driving unit. The area occupied by the bypass switch Q2 is smaller than the area occupied by the main power switch Q1, the current flowing through the bypass switch Q2 in the bypass mode is less than or equal to the first current-limiting value set by the current-limiting driving unit 213, and the first current-limiting value is less than the maximum current flowing through the main power switch Q1 in the normal working mode.
[0054] For example, in the present application, the first current-limiting value can be in the range of 1uA-100uA, for example, the first current-limiting value can be 10uA. It can be understood that the first value range can also be other values, which are not limited in the present embodiment.
[0055] For example, in practical application, the intelligent electronic switch 20 can further include an input terminal Input, and an external microcontroller 40 can be connected to the input terminal Input. The control circuit 21 can control the switching state of the switching circuit 22 based on a switching control signal (Input signal) received from the microcontroller 40. For example, if the received switching control signal is an on control signal on, the logic control unit 211 controls the main power switch Q1 to be turned on via the first drive unit 212 or controls the bypass switch Q2 to be turned on via the current-limiting drive unit 213. If the received switching control signal is an off control signal off, the control circuit 21 controls the main power switch Q1 to be turned off via the first drive unit 212 and controls the bypass switch Q2 to be turned off via the current-limiting drive unit 213.
[0056] Optionally, in practical application, in order to meet the working requirements of the load and the low-power consumption requirement, several working modes of the intelligent electronic switch 20 are set, and the correspondence between the first drive unit 212, the current-limiting drive unit 213 and the working modes is set. In this way, the logic control unit 211 can control the working states of the first drive unit 212 and the current-limiting drive unit 213 according to the working mode of the intelligent electronic switch 20, and further control the switching states of the main power switch Q1 and the bypass switch Q2. For example, in the normal working mode, the logic control unit 211 drives the main power switch Q1 to be turned on via the first drive unit 212. In the bypass mode, the logic control unit 211 drives the bypass switch Q2 to be turned on via the current-limiting drive unit 213.
[0057] In the embodiment, the driving capabilities of the first drive unit 212 and the current-limiting drive unit 213 are different, the areas of the main power switch Q1 and the bypass switch Q2 are different, and the load carrying capacities thereof are different. Therefore, the current flowing through the main power switch Q1 when the logic control unit 211 drives the main power switch Q1 to be turned on via the first drive unit 212 is different from the current flowing through the bypass switch Q2 when the logic control unit 211 drives the bypass switch Q2 to be turned on via the current-limiting drive unit 213. The maximum current flowing through the bypass switch Q2 when the current-limiting drive unit 213 drives the bypass switch Q2 to be turned on can be set, i.e., a first current-limiting value is set. Therefore, in the bypass mode, when the logic control unit 211 drives the bypass switch Q2 to be turned on via the current-limiting drive unit 213, the current flowing through the bypass switch Q2 is less than or equal to the first current-limiting value set by the current-limiting drive unit 213.
[0058] In actual application, when the main power switch Q1 and the bypass switch Q2 are implemented by MOS tubes, the larger the area of the same type of MOS tube is, the greater the current driving capability it has. In addition, the current driving capability of the N-type MOS tube with the same area is greater than that of the P-type MOS tube with the same area. Therefore, when the bypass switch Q2 with a small area and the main power switch Q1 with a large area are both turned on, the current flowing through the bypass switch Q2 is less than the current flowing through the main power switch Q1. Correspondingly, the first current limiting value set by the current limiting driving unit 213 is less than the maximum current flowing through the main power switch Q1 in the normal working mode.
[0059] Therefore, in the intelligent electronic switch 20, the power consumption of the first driving unit 212 is greater than that of the current limiting driving unit 213. Therefore, the self-consumption of the intelligent electronic switch 20 in the bypass mode is less than that in the normal working mode.
[0060] In a possible design of the embodiment, the main power switch Q1 and the bypass switch Q2 can be N-type metal-oxide-semiconductor field-effect transistors (NMOS FETs), PMOS tubes, junction field effect transistors (JFETs), or insulated gate bipolar transistors (IGBTs), etc. In another possible design of the embodiment, the main power switch Q1 and the bypass switch Q2 can also be implemented as silicon devices, or can be implemented using other semiconductor materials, such as silicon carbide (SiC), gallium arsenide (GaAs), or gallium nitride (GaN), etc. The embodiment of the application does not limit the specific implementation form of the main power switch Q1 and the bypass switch Q2, which can be selected according to actual needs.
[0061] Optionally, in actual application, a fuse (not shown) can be connected in series between the battery 10 and the power supply end VBAT to prevent faults caused by excessive current on the line. Other elements, such as an anti-reverse connection diode and a current limiting resistor connected in parallel, can be arranged between the power supply ground end GND and the negative electrode of the battery 10 to improve the stability of the intelligent electronic switch 20.
[0062] Optionally, in Figure 1In the schematic diagram shown, the connection relationship between the logic control unit 211, the first driving unit 212, the current-limiting driving unit 213, and the power supply unit is not shown, but in actual applications, the internal power supply unit of the intelligent electronic switch 20 can be connected with the power supply terminal VBAT to step down the voltage of the power supply terminal VBAT, for example, the power supply unit is used to reduce the voltage of the power supply terminal VBAT from 12V to 5V, and the voltage output by the power supply unit is used to supply power to the logic control unit 211, the first driving unit 212, the current-limiting driving unit 213, and other circuits. Optionally, one implementation of the power supply unit is a low drop out regulator (LDO). In other embodiments, the internal power supply unit of the intelligent electronic switch 20 can also not be provided, and at this time the positive electrode of the battery 10 is also connected to a step-down unit, and the step-down unit outputs the stepped-down voltage to the intelligent electronic switch 20, for example, the voltage range of the voltage output by the step-down unit to the power supply terminal VBAT is 3.3V-5V, which can directly supply power to the logic control unit 211, the first driving unit 212, the current-limiting driving unit 213, and other circuits inside the intelligent electronic switch 20.
[0063] It can be understood that in actual applications, when the main power switch q1 and the bypass switch Q2 are connected as high-side switches and are N-type switch tubes, the first driving unit 212 can also be connected with a boost unit such as a charge pump, and the output voltage of the first driving unit 212 is boosted by the charge pump before being output to the main power switch Q1, so as to drive the main power switch Q1 to open and conduct.
[0064] In the embodiments of the present application, the switch circuit includes a main power switch and a bypass switch, and the control circuit includes a logic control unit, a first driving unit, and a current-limiting driving unit, the intelligent electronic switch works in a normal working mode, the logic control unit drives the main power switch to open and conduct through the first driving unit, in a bypass mode, the logic control unit controls the bypass switch to open and conduct through the current-limiting driving unit and controls the main power switch to turn off and cut off through the first driving unit; the area occupied by the bypass switch is smaller than the area occupied by the main power switch, the current value flowing through the bypass switch in the bypass mode is less than or equal to the first current-limiting value set by the current-limiting driving unit, and the first current-limiting value is less than the maximum current value flowing through the main power switch in the normal working mode. In this way, the power consumption of the current-limiting driving unit when working is less than the power consumption of the first driving unit when working, so that the self-consumption power of the intelligent electronic switch in the bypass mode is less than the self-consumption power of the intelligent electronic switch in the normal working mode, and in the present embodiment, the bypass circuit and the main circuit do not interfere with each other when operating, the newly added bypass does not affect the original main circuit, the performance is more stable, and the reliability is high.
[0065] Optionally, the first embodiment is a general introduction of the intelligent electronic switch 20, and the following embodiments explain the implementation principle of the intelligent electronic switch 20 in the bypass mode, in which the self-consumption power of the intelligent electronic switch 20 is less than that in the normal working mode. It can be understood that each of the following embodiments is based on the above-mentioned Figure 1 The implementation principle of the intelligent electronic switch 20 in the bypass mode is explained based on the above-mentioned embodiment (the main power switch Q1 and the bypass switch Q2 are connected as high-side switches). The implementation principle of the main power switch Q1 and the bypass switch Q2 connected as low-side switches is similar, and the embodiment is not described in detail.
[0066] Figure 2 FIG. 1 is a schematic diagram of an electronic device provided by a second embodiment of the present application. As shown in the figure, the electronic device includes a power supply 10, a load 20, and a control unit 30. Figure 2 In the embodiment, the intelligent electronic switch 20 further includes a current protection unit 241 connected with the logic control unit 211.
[0067] In actual application, the current protection unit 241 is used to output a current protection signal to trigger the current protection of the switch circuit 22 when detecting the abnormal output current of the switch circuit 22.
[0068] It can be understood that, in theory, the current protection unit 241 can protect the current of the main power switch Q1 or the bypass switch Q2. However, in the embodiment, since the current flowing through the bypass switch Q2 in the bypass mode is less than or equal to the first current limiting value set by the current limiting driving unit 213, and the first current limiting value is less than the maximum current flowing through the main power switch Q1 in the normal working mode, the current protection threshold value can be set to correspond to the first current limiting value, for example, when the current flowing through the bypass switch Q2 or the main power switch Q1 is less than the first current limiting value, the current sampling value of the bypass switch Q2 or the main power switch Q1 is less than the current protection threshold value. Therefore, in the bypass mode, since the current flowing through the bypass switch Q2 is less than or equal to the first current limiting value, the current sampling value corresponding to the current flowing through the bypass switch Q2 will not exceed the overcurrent protection threshold value, so that even if the overcurrent protection unit is in normal working, it will not trigger the logic control unit 211 to protect the overcurrent of the bypass switch Q2. Therefore, the current protection unit 241 mainly protects the current of the main power switch Q1 in the normal working mode of the intelligent electronic switch 20, and stops working in the bypass mode of the intelligent electronic switch 20 to reduce the self-consumption power of the intelligent electronic switch 20.
[0069] As an example, the above-mentioned embodiment is continued to be referred to. Figure 2As shown, the current protection unit 241 can include a current sampling module 241 A and a current processing module 241 B connected with the current sampling module 241 A, and the current processing module 241 B is also used to access a current protection threshold. In this example, the current sampling module 241 A is used to sample the current flowing through the main power switch Q1 and output a current sampling value to the current processing module 241 B, and the current processing module 241 B compares the current sampling value with the current protection threshold, and outputs a current protection signal to the logic control unit 211 when the current sampling value is abnormal, i.e., the output current of the main power switch Q1 is abnormal, to trigger the action on the main power switch Q1, thereby realizing the current protection of the main power switch Q1.
[0070] In a possible design, continuing to refer to Figure 2 As shown, the current sampling module 241 A can include a sensing transistor Qx, a first operational amplifier unit Y1, and a switch tube P11. When the main power switch Q1 and the sensing transistor Qx are both off, the switch tube P11 is also off. When the logic control unit 211 drives the main power switch Q1 and the sensing transistor Qx to be on through the first driving unit, the positive terminal voltage of the first operational amplifier unit Y1 is less than the negative terminal voltage, then the first operational amplifier unit Y1 outputs a low level, the switch tube P11 is turned on, and the sensing transistor Qx outputs the sensed current through the switch tube P11. Optionally, the current processing module 241 B can be a second operational amplifier unit Y2, which can compare the received sensing current with a preset current protection threshold Iref to determine whether the current of the main power switch Q1 is abnormal.
[0071] In another possible design, the current sampling module 241 A can include a sampling resistor and an operational amplifier unit. The sampling resistor is connected in series in the branch where the main power switch Q1 is located. At this time, the current flowing through the sampling resistor is the same as the current flowing through the main power switch Q1. Therefore, by detecting the current flowing through the sampling resistor, the current flowing through the main power switch Q1 can be obtained.
[0072] In actual applications, the current sampling module 241 A can also be implemented by other structures, for example, based on the principle of generating a magnetic field by current, the current flowing through the main power switch Q1 can be measured by a magnetic field sensor.
[0073] As an example, the current protection unit 241 comprises an overcurrent protection unit, and the current protection threshold is an overcurrent protection threshold. In this example, the overcurrent protection unit is connected to the preset overcurrent protection threshold and a current sampling value, which is used to represent the current value flowing through the main power switch Q1. Optionally, in the normal working mode, when the current sampling value is greater than the overcurrent protection threshold, the current value flowing through the main power switch Q1 is greater than the first current limiting value, and the overcurrent protection unit outputs an overcurrent signal to the logic control unit 211, so that the logic control unit 211 controls the main power switch Q1 to be turned off via the first driving unit 212; in the bypass mode, the overcurrent protection unit stops working.
[0074] In the normal working mode, the logic control unit 211 controls the main power switch Q1 to be turned on via the first driving unit 212, and there is a current flowing through the main power switch Q1. When the current value flowing through the main power switch Q1 is greater than the first current limiting value, the current sampling value is greater than the overcurrent protection threshold. Accordingly, the overcurrent protection unit outputs an overcurrent signal to the logic control unit 211, so that the logic control unit 211 controls the main power switch Q1 to be turned off via the first driving unit 212, thereby avoiding the main power switch Q1 from being burned out due to a large current flowing therethrough.
[0075] As another example, the current protection unit 241 comprises a current limiting protection unit, and the current protection threshold is a current limiting protection threshold. The current limiting protection unit is connected to the preset current limiting protection threshold and a current sampling value. In the normal working mode, the current limiting protection unit normally works. When the current sampling value is greater than the current limiting protection threshold, the current value flowing through the main power switch Q1 is greater than the first current limiting value, and the current limiting protection unit outputs a current limiting signal to the logic control unit 211, so that the logic control unit 211 adjusts the size of the control signal output to the control terminal of the main power switch Q1 via the first driving unit 212, so as to reduce the current value flowing through the main power switch Q1, so that the current sampling value is less than or equal to the current limiting protection threshold. In the bypass mode, the current limiting protection unit stops working.
[0076] In the normal working mode, when the current value flowing through the main power switch Q1 is greater than the first current limiting value, the current sampling value is greater than the current limiting protection threshold. Accordingly, the current limiting protection unit outputs a current limiting signal to the logic control unit 211, so that the logic control unit 211 adjusts the control signal for the main power switch Q1 via the first driving unit 212, thereby reducing the current value flowing through the main power switch Q1.
[0077] In the bypass mode, the current flowing through the main power switch Q1 is less than or equal to the first current limit value, which makes the current sampling value corresponding to the current flowing through the main power switch Q1 not exceeding the current limit protection threshold value, so that even if the current limit protection unit works normally, it cannot play a current limit protection role. Therefore, in the bypass mode, the logic control unit 211 can control the current limit protection unit to stop working, thereby reducing the self-consumption power of the intelligent electronic switch 20.
[0078] Figure 3 is a circuit module schematic diagram of an electronic device provided by the third embodiment of the present application. As shown in Figure 3 In the present embodiment, the intelligent electronic switch 20 includes a first over-temperature protection unit 242, a second over-temperature protection unit 243, and a third over-temperature protection unit 244, all of which are connected with the logic control unit 211.
[0079] Referring to Figure 3 As shown, the first over-temperature protection unit 242 inputs a preset first over-temperature protection threshold value and a first temperature sampling value, and the first temperature sampling value is used to represent the temperature of the main power switch Q1; the second over-temperature protection unit 243 inputs a preset second over-temperature protection threshold value and a second temperature sampling value, and the second temperature sampling value is used to represent the temperature of the bypass switch Q2; the third over-temperature protection unit 244 inputs a preset third over-temperature protection threshold value and a temperature difference value, and the temperature difference value is the difference between the temperature sampling value of the main power switch Q1 and the ambient temperature.
[0080] In the normal working mode, the logic control unit 211 controls the first over-temperature protection unit 242 and the third over-temperature protection unit 244 to work, when the first temperature sampling value is greater than the first over-temperature protection threshold value, the first over-temperature protection unit 242 outputs a first over-temperature signal, and / or when the temperature difference value is greater than the third over-temperature protection threshold value, the third over-temperature protection unit 244 outputs a first over-temperature signal, and the logic control unit 211 controls the main power switch Q1 to be turned off via the first drive unit 212 according to the first over-temperature protection signal.
[0081] In the bypass mode, the logic control unit 211 controls the first over-temperature protection unit 242 and the third over-temperature protection unit 244 to stop working and controls the second over-temperature protection unit 243 to work, when the second temperature sampling value is greater than the second over-temperature protection threshold value, the second over-temperature protection unit 243 outputs a second over-temperature signal, so that the logic control unit 211 controls the bypass switch Q2 to be turned off via the current limit drive unit 213; wherein the power consumption of the second over-temperature protection unit 243 is less than the power consumption of the first over-temperature protection unit 242.
[0082] As an example, continuing to refer to Figure 3As shown, the first over-temperature protection unit 242 can include a temperature detection module and a temperature processing module 2420, the temperature detection module can include a first element 2421 and a first temperature detection element 2422, wherein the first temperature detection element 2422 is connected in series with the first element 2421, the point where the first temperature detection element 2422 is connected with the first element 2421 is a temperature detection point TP, the temperature detection point TP is connected to the temperature processing module 2420, and the first temperature detection element 2422 is arranged adjacent to or embedded in the main power switch Q1 for more accurate detection of the temperature of the main power switch Q1. In this embodiment, one end of the first temperature detection element 2422 is connected to the power ground end GND, the other end of the first temperature detection element 2422 is connected to one end of the first element 2421, and the other end of the first element 2421 can be connected to the power supply end VBAT through an internal power supply unit (not shown), but the application is not limited thereto. In other embodiments of the application, one end of the first temperature detection element 2422 is connected to the power supply end VBAT through an internal power supply unit, the other end of the first temperature detection element 2422 is connected to one end of the first element 2421, and the other end of the first element 2421 is connected to the power ground end GND. In this embodiment, the first temperature detection element 2422 is a negative temperature coefficient temperature detection element, at this time, the higher the temperature of the main power switch Q1, the higher the temperature on the first temperature detection element 2422, and the lower the voltage of the corresponding temperature detection point TP; and the lower the temperature of the main power switch Q1, the lower the temperature on the first temperature detection element 2422, and the higher the voltage of the temperature detection point TP. However, the application is not limited thereto, and in other embodiments of the application, the first temperature detection element 2422 can also be a positive temperature coefficient temperature detection element, at this time, the higher the temperature of the main power switch Q1, the higher the temperature on the first temperature detection element 2422, and the higher the voltage of the temperature detection point TP; and the lower the temperature of the main power switch Q1, the lower the temperature on the first temperature detection element 2422, and the lower the voltage of the temperature detection point TP. In this embodiment, the first temperature detection element 2422 is exemplarily described as one or more series-connected diodes. In other embodiments of the application, the first temperature detection element 2422 is one or more series-connected thermistors. In this embodiment, the first element 2421 can be a current source or a voltage dividing resistor, for example, the first element 2421 is explained and described as a current source in this embodiment.
[0083] In an embodiment of the present application, the temperature processing module 2420 can be an operational amplifier unit, which can compare the voltage of the obtained temperature monitoring point TP with the temperature threshold voltage Tref. When the temperature of the main power switch Q1 is abnormal, that is, the temperature sampling value is greater than the over-temperature protection threshold, that is, the voltage of the temperature detection point TP is less than the temperature threshold voltage Tref (the temperature detection element 2422 is a temperature detection element with a negative temperature coefficient), the temperature processing module 2420 outputs an over-temperature signal to the logic control unit 211 to trigger the logic control unit 211 to turn off the main power switch Q1 through the first driving unit 212, thereby achieving temperature protection for the main power switch Q1.
[0084] In one possible design, the second over-temperature protection unit 243 and the second over-temperature protection unit 242 can share the first element and the temperature processing module. Figure 3 As shown, the second over-temperature protection unit 243 and the second over-temperature protection unit 242 can share the first element, the internal power supply unit, and the temperature processing module. In this case, a switch k1 can be connected between the first temperature detection element 2422 and the temperature detection point TP, and a switch k2 can be connected between the second temperature detection element 2423 included in the second over-temperature protection unit 243 and the temperature detection point TP. In normal working mode, switch k1 is turned on and switch k2 is turned off, and the first over-temperature protection unit 242 operates normally. In bypass mode, switch k1 is turned off and switch k2 is turned on, and the second over-temperature protection unit 243 operates normally. In this embodiment, the first over-temperature protection unit 242 and the second over-temperature protection unit 243 share the first element, the internal power supply unit, and the temperature processing module, which reduces the number of components used and the occupied area, saving costs.
[0085] Optionally, the structure and implementation principle of the third over-temperature protection unit 244 are the same as those of Figure 3The third over-temperature protection unit 244 is basically consistent with the first over-temperature protection unit 242, and details are not repeated here. In the embodiment, the third over-temperature protection unit 244 includes a second element 2441, a temperature detection element 2442, an operational amplifier unit 2443, and an operational amplifier unit 2444. The temperature detection element 2442 is away from the temperature detection element 2422 in the first over-temperature protection unit 242. One end of the second element 2441 is connected to the power supply terminal VBAT through the internal power supply unit 2423, and the other end of the second element 2441 is connected to the temperature detection element 2442, and the connection point of the two is TP2, which is connected to the first input terminal of the operational amplifier unit 2443. The other end of the temperature detection element 2442 is connected to the power supply ground terminal GND. The second input terminal of the operational amplifier unit 2443 is connected to the temperature detection point TP of the first over-temperature protection unit 24A, and the output terminal is connected to one input terminal of the operational amplifier unit 2444. The other input terminal of the operational amplifier unit 2444 is used to access the third over-temperature protection unit 243, and the output terminal is connected to the logic control unit 211.
[0086] In the embodiment, the temperature detection element 2442 is used to obtain the ambient temperature of the main power switch Q1. The operational amplifier unit 2443 is used to determine the difference between the temperature sampling value of the main power switch Q1 and the ambient temperature and output the temperature difference value TD. The operational amplifier unit 2444 is used to output the first over-temperature signal Toc1 when the temperature difference value TD is greater than the third over-temperature protection threshold Tref3.
[0087] Optionally, when the intelligent electronic switch 20 works in the normal working mode, the current range flowing through the main power switch Q1 is large, and the maximum current value flowing through the main power switch Q1 can be greater than the first current limiting value. The main power switch Q1 can generate more heat. Therefore, in order to avoid damage to the main power switch Q1 due to high temperature, the first over-temperature protection unit 242 and the third over-temperature protection unit 244 are in a normal working state in the normal working mode.
[0088] When the intelligent electronic switch 20 works in the bypass mode, the current value flowing through the bypass switch Q2 is less than the first current limiting value. At this time, the bypass switch Q2 generates less heat. However, if the load is short-circuited or the bypass switch Q2 generates heat for a long time, the bypass switch Q2 can also be damaged due to abnormal temperature. Therefore, the second over-temperature protection unit 243 is arranged to protect the bypass switch Q2 from temperature. That is, in the bypass mode, the logic control unit 211 controls the first over-temperature protection unit 242 and the third over-temperature protection unit 244 to stop working, and the second over-temperature protection unit 243 works. In this way, the bypass switch Q2 can be prevented from being damaged by high temperature.
[0089] Optionally, in order to accurately control the power consumption of the intelligent electronic switch 20, in actual application, the first over-temperature protection unit 242 and the second over-temperature protection unit 243 can be composed of elements with different precision, for example, the precision of the temperature sensor and the comparator in the first over-temperature protection unit 242 is higher than the precision of the temperature sensor and the comparator in the second over-temperature protection unit 243, so that the power consumption of the first over-temperature protection unit 242 is greater than the power consumption of the second over-temperature protection unit 243 when working, so that the self-consumption of the intelligent electronic switch 20 in the bypass mode is less than the self-consumption of the intelligent electronic switch 20 in the normal working mode, and in the bypass mode, the third over-temperature protection unit 244 stops working, so that the self-consumption in the bypass mode can be reduced.
[0090] Figure 4 is a circuit module schematic diagram of an electronic device provided by the fourth embodiment of the present application. As shown in Figure 4 In the embodiment, when the switch circuit 22 includes MOS tubes, the main power switch Q1 can be an N-type MOS tube, the bypass switch Q2 can be a P-type MOS tube, and when the main power switch Q1 and the bypass switch Q2 are both connected between the power supply terminal VBAT and the load output terminal OUT, the first driving unit 212 includes a boost module (such as a charge pump, etc.) and a driving module, the boost module is connected with the driving module, the driving module is connected with the control terminal of the main power switch Q1, the boost module is used to boost the output voltage of the driving module, and the driving module is used to control the main power switch Q1 to open and conduct when the intelligent electronic switch 20 works in the normal working mode.
[0091] Optionally, in the embodiment, the first driving unit 212 can also include a level shifter, and the driving module can drive the main power switch Q1 to open and conduct based on the signal transmitted by the level shifter. The current limiting driving unit 213 is used to drive the bypass switch Q2 to open and conduct, and also used to limit the maximum current flowing through the bypass switch Q2.
[0092] It can be understood that when the main power switch Q1 and the bypass switch Q2 are connected as high-side switches, in view of the conduction characteristics of the N-type MOS tube, the voltage output by the first driving unit 212 can be higher than the voltage of the power supply terminal VBAT through the boosting effect of the boost module, so as to make the gate-source voltage signal of the N-type MOS tube meet the opening requirement of the N-type MOS tube. However, in view of the conduction characteristics of the P-type MOS tube, the current limiting driving unit 213 for driving the P-type MOS tube to open and conduct does not need a boost module, etc., and the current limiting value flowing through the bypass switch Q2 can be set, so that the current limiting driving unit 213 reduces the power consumption relative to the first driving unit 212.
[0093] For example, referring to Figure 4As shown, the voltage boosting module is implemented in the form of a charge pump. For example, the charge pump includes an oscillator, a P-type MOS transistor CP_P1, an N-type MOS transistor CP_N1, capacitors C1 and C2, and diodes D1 and D2. The control terminals of the P-type MOS transistor CP_P1 and the N-type MOS transistor CP_N1 are connected to the oscillator. The drain of the P-type MOS transistor CP_P1 is connected to a power supply terminal VBAT. The source of the P-type MOS transistor CP_P1 is connected to the source of the N-type MOS transistor CP_N1, and the connection point is A1. The drain of the N-type MOS transistor CP_N1 is connected to a first power supply terminal Vs. Based on the voltage resistance of the P-type MOS transistor CP_P1 and the N-type MOS transistor CP_N1, for example, 5V, the first power supply terminal Vs is usually 5V lower than the voltage of the power supply terminal VBAT. One end of the capacitor C1 is connected to the connection point A1. The other end of the capacitor C1 is connected to the cathode of the diode D1 and the anode of the diode D2. The anode of the diode D1 and one end of the capacitor C2 are both connected to the power supply terminal VBAT. The cathode of the diode D2 is connected to the other end of the capacitor C2. The oscillator is used to generate an oscillation frequency to turn on or turn off the P-type MOS transistor CP_P1 and the N-type MOS transistor CP_N1. The capacitor C1 is used to boost the voltage output by the charge pump. The capacitor C2 is used to store energy. The diodes D1 and D2 are used to limit the current direction.
[0094] Optionally, continuing to refer to Figure 4 As shown, the drive module can include a switch D_P1 and a switch D_N1. The control terminal of the main power switch Q1 is connected to the drain of the switch D_P1 and the drain of the switch D_N1. The control terminals of the switch D_P1 and the switch D_N1 are both connected to the logic control unit 211. The source of the switch D_P1 is connected to the output of the voltage boosting module. The source of the switch D_N1 is connected to the load output terminal OUT. The control terminals of the switch D_P1 and the switch D_N1 are both connected to the logic control unit 211. In this way, the logic control unit 211 can control the switch D_P1 to be turned on and the switch D_N1 to be turned off, so that the power switch Q (N-type MOS transistor) is turned on. When the switch D_P1 is controlled to be turned off and the switch D_N1 is controlled to be turned on, the power switch Q is turned off.
[0095] For example, the second drive unit 213 mainly functions to drive the bypass switch Q2 to be turned on, so that the intelligent electronic switch 20 provides a load current path through the bypass switch Q2. Continuing to refer to Figure 4As shown, in the embodiment, the current-limiting driving unit 213 can include a transistor M1 and a constant current source I1, which are of the same type as the bypass switch Q2, and are connected to form a current-limiting driving branch, one end of which is connected to one end of the bypass switch Q2, the other end of which is connected to the power supply terminal VBAT or the power ground terminal GND, and the control terminal of which is connected to the logic control unit 211, the drain of the transistor M1 is connected to the control terminal thereof, and the control terminal is further connected to the control terminal of the bypass switch Q2. At this time, in the bypass mode, the logic control unit 211 controls the current-limiting driving branch, so that the current-limiting driving unit 213 works to control the bypass switch Q2 to be turned on via the current-limiting driving unit 213, and the current flowing through the bypass switch Q2 is less than or equal to the first current-limiting value set by the current-limiting driving unit 213, which is related to the current value provided by the constant current source I1 and the current mirror ratio of the transistor M1 and the bypass switch Q2, and the first current-limiting value is less than the maximum current value flowing through the main power switch Q1 in the normal working mode.
[0096] In one possible design, the transistor M1 and the bypass switch Q2 are both N-type switch tubes, one end of the constant current source I1 is connected to the power supply terminal VBAT and the other end thereof is connected to the drain of the transistor M1, the source of the transistor M1 is connected to the source of the bypass switch Q2 and both are connected to the load output terminal OUT or the power ground terminal GND. Optionally, when the bypass switch Q2 is connected as a high-side switch, the source of the bypass switch Q2 is connected to the load output terminal OUT, and when the bypass switch Q2 is connected as a low-side switch, the source of the bypass switch Q2 is connected to the power ground terminal GND.
[0097] In another possible design, referring to Figure 4 As shown, the transistor M1 and the bypass switch Q2 are both P-type switch tubes, at this time, one end of the constant current source I1 is connected to the power ground terminal GND or the load output terminal OUT and the other end thereof is connected to the drain of the transistor M1, the source of the transistor M1 and the source of the bypass switch Q2 are connected and both are connected to the power supply terminal VBAT or the load output terminal OUT. Optionally, when the bypass switch Q2 is connected as a high-side switch, the source of the bypass switch Q2 is connected to the power supply terminal VBAT, and when the bypass switch Q2 is connected as a low-side switch, the source of the bypass switch Q2 is connected to the load output terminal OUT.
[0098] In the embodiment of the present application, the bypass switch Q2 comprises a MOS tube, and the ratio of the first current limiting value to the current value provided by the constant current source I1 is equal to the ratio of the width-length ratio of the bypass switch Q2 to the width-length ratio of the transistor M1. The current value provided by the constant current source I1 is equal to the current value flowing through the transistor M1, and the ratio of the current value flowing through the bypass switch Q2 to the output current value of the transistor M1 is equal to the ratio of the width-length ratio of the bypass switch Q2 to the width-length ratio of the transistor M1. In addition, when the transistor M1 and the bypass switch Q2 work in the saturation region, the current value flowing through the bypass switch Q2 is equal to the first current limiting value set by the current limiting driving unit 213, so that, in the embodiment, the ratio of the first current limiting value to the current value provided by the constant current source I1 is equal to the ratio of the width-length ratio of the bypass switch Q2 to the width-length ratio of the transistor M1.
[0099] Optionally, the embodiment of the present application does not limit the manner of enabling the current limiting driving unit, for example, as an example, the constant current source I1 comprises an enabling end, and the logic control unit 211 can turn on the current limiting driving branch by controlling the enabling of the constant current source I1 in the bypass mode, so as to enable the current limiting driving unit; as another example, a second switch module can also be included on the current limiting driving branch, and the logic control unit 211 can enable the constant current driving unit by controlling the second switch module to be turned on in the bypass mode.
[0100] Optionally, in the embodiment, the first driving unit 212 drives the main power switch Q1 to work in the linear resistance region in the normal working mode, and the current limiting driving unit 213 drives the bypass switch Q2 to work in the saturation region in the bypass mode.
[0101] Optionally, in the bypass mode, when the rated working current of the load is less than or equal to the first current limiting value, the bypass switch Q2 works in the linear resistance region; when the rated working current of the load is greater than the first current limiting value, the bypass switch Q2 works in the saturation region.
[0102] As an example, in the normal working mode, after the first driving unit 212 drives the main power switch Q1 to be turned on, the current value flowing through the main power switch Q1 can change with the size of the load within the output current range that the main power switch Q1 can provide, and according to the output characteristic curve of the power switch, the main power switch Q1 works in the linear resistance region at this time. In the bypass mode, after the current limiting driving unit 213 drives the bypass switch Q2 to be turned on, when the current value flowing through the bypass switch Q2 is less than the first current limiting value set by the current limiting driving unit 213, the current value flowing through the bypass switch Q2 can change with the size of the load, and the bypass switch Q2 works in the linear resistance region at this time; when the current value flowing through the bypass switch Q2 reaches the first current limiting value set by the current limiting driving unit 213, the current value flowing through the bypass switch Q2 also basically does not change with the increase of the load, and the bypass switch Q2 works in the saturation region at this time.
[0103] It can be understood that in specific implementations, the current-limiting drive unit 213 can also be implemented by other structures. For example, the current-limiting drive unit 213 can also include one or more mirror units, or a constant current source is replaced by a constant current source of other specifications and one or more mirror units, etc. Correspondingly, the connection relationship of the internal circuit elements of the current-limiting drive unit 213 can also be adjusted according to actual needs, etc. The specific structure of the current-limiting drive unit 213 is not limited in the embodiment.
[0104] In the embodiment, the current-limiting drive unit can set the maximum current value flowing through the bypass switch through the current source and the transistor, which has a simple structure, is easy to implement, and has lower power consumption than the first drive unit. In the case of meeting the load current demand, the power consumption is saved.
[0105] Optionally, on the basis of the above embodiment, Figure 5 is a circuit structure schematic diagram of an electronic device provided by the fifth embodiment of the present application. As shown in the figure, Figure 5 The intelligent electronic switch 20 can also include a diagnosis circuit 23 and a diagnosis output end CS. The diagnosis circuit 23 is connected with the logic control unit 211 and the diagnosis output end CS. The diagnosis circuit 23 is used to collect parameter information of the intelligent electronic switch 20 and output to the microcontroller 40 through the diagnosis output end CS, so that the microcontroller 40 diagnoses the state of the intelligent electronic switch 20.
[0106] In the normal working mode, the logic control unit 211 controls the diagnosis circuit 23 to work in the first diagnosis state. In the bypass mode, the logic control unit 211 controls the diagnosis circuit 23 to work in the second diagnosis state, and the power consumption of the diagnosis circuit 23 working in the second diagnosis state is less than that of the diagnosis circuit 23 working in the first diagnosis state. For example, in the normal working mode, the diagnosis circuit 23 normally works, while in the bypass mode, the diagnosis circuit 23 stops working or part of the modules of the diagnosis circuit 23 stop working or the diagnosis circuit works in an energy-saving state or part of the modules of the diagnosis circuit 23 work in an energy-saving state. The energy-saving state can be a periodic working state.
[0107] In the embodiment, the diagnosis circuit 23 can monitor some working indexes of the intelligent electronic switch 20 and obtain parameter information of the intelligent electronic switch 20 when the main power switch Q1 and / or the bypass switch Q2 are in the on state, and output to the microcontroller 40 through the diagnosis output end CS. In this way, the microcontroller 40 can diagnose the state of the intelligent electronic switch 20 based on the received parameter information.
[0108] For example, when the intelligent electronic switch 20 works in the normal working mode, the diagnostic circuit 23 works normally, and when the intelligent electronic switch 20 works in the bypass mode, the diagnostic circuit 23 stops working. Thus, when the intelligent electronic switch 20 works in the normal working mode, the diagnostic circuit 23 can acquire at least one of the current information of the main power switch Q1, the temperature information of the main power switch Q1, the power supply voltage information of the intelligent electronic switch 20, and the abnormal indication information of the abnormal turn-off of the main power switch Q1, and can output the corresponding parameter information to the microcontroller 40 through the diagnostic output end CS based on the function selection of the microcontroller 40, so that the microcontroller 40 diagnoses the state of the intelligent electronic switch 20, thereby more accurately controlling the working state of the intelligent electronic switch 20.
[0109] In the technical solution, when the intelligent electronic switch controls the main power switch or the bypass switch to be in the open-on state, the working state of the diagnostic circuit can also be controlled according to the working mode of the intelligent electronic switch, thereby effectively reducing the self-consumption power of the intelligent electronic switch, prolonging the endurance time of the battery connected to the intelligent electronic switch, and improving the application experience on the basis of ensuring the normal working of the load.
[0110] Optionally, in the embodiment of the present application, the intelligent electronic switch 20 can further include a protection circuit 24 connected to the logic control unit 211, and the protection circuit 24 is configured to protect the intelligent electronic switch 20. When the intelligent electronic switch 20 works in the normal working mode, the logic control unit 211 can control the protection circuit 24 to work in a first protection state when the logic control unit 211 controls the main power switch Q1 to be in the open-on state via the first drive unit 212, and when the intelligent electronic switch 20 works in the bypass mode, the logic control unit 211 can control the protection circuit 24 to work in a second protection state when the logic control unit 211 controls the bypass switch Q2 to be in the open-on state via the current-limiting drive unit 213, wherein the power consumption of the protection circuit 24 working in the second protection state is less than the power consumption of the protection circuit 24 working in the first protection state, so as to reduce the power consumption of the protection circuit 24 in the bypass mode.
[0111] For example, the protection circuit 24 can include at least one of the current protection unit 241 shown in the above-mentioned Figure 2 , the over-temperature protection unit 242 shown in the above-mentioned Figure 3 , and a voltage protection unit (not shown).
[0112] The specific implementation and working principle of the current protection unit 241 and the over-temperature protection unit 242 can be referred to the description in the above-mentioned embodiment, which will not be described here. The voltage protection unit is configured to trigger the voltage protection of the intelligent electronic switch 20 when detecting the abnormal voltage of the power supply voltage VBAT and outputting the voltage abnormal signal, and the power consumption of the voltage protection unit in the bypass mode is less than the power consumption of the voltage protection unit in the normal working mode.
[0113] Optionally, the voltage protection unit can comprise an overvoltage protection unit and / or an undervoltage protection unit. The overvoltage protection unit is configured to trigger overvoltage protection of the intelligent electronic device 20 when it is detected that the voltage of the power supply terminal VBAT is higher than a first voltage threshold, for example, when the voltage VBAT of the power supply terminal VBAT is greater than the first voltage threshold, the switch circuit 22 can be turned off by the logic control unit 211 or the voltage of the power supply terminal VBAT can be pulled down by the voltage clamping circuit to reduce the voltage of the power supply terminal VBAT, thereby protecting the intelligent electronic device 20 from being damaged by high voltage. The undervoltage protection unit is configured to trigger undervoltage protection of the intelligent electronic device 20 when it is detected that the voltage of the power supply terminal VBAT is lower than a second voltage threshold, for example, when the voltage of the power supply terminal VBAT is less than the second voltage threshold, the intelligent electronic device 20 can be disabled by turning off the switch circuit 22 by the logic control unit 211, thereby improving the reliability of the intelligent electronic device 20 when it is used.
[0114] In practical applications, multiple protection units or one or more of multiple protection units can be designed in the intelligent electronic device 20, for example, the intelligent electronic device 20 can have current protection units, over-temperature protection units, voltage protection units, etc., or only one or several of them. When at least two protection units are designed in the intelligent electronic device 20, at least one protection unit in the protection circuit 24 stops working or works in an energy-saving state in the bypass mode, so as to reduce the power consumption of the protection circuit 24, and further reduce the self-consumption of the intelligent electronic device 20.
[0115] Optionally, in other embodiments of the present application, continuing to refer to Figure 5 As shown, the intelligent electronic device 20 further comprises a first function terminal FU1 and a second function terminal FU2, both of which are connected to the logic control unit 211. When the first function terminal FU1 receives a first signal and the second function terminal FU2 receives a second signal, the logic control unit 211 controls the intelligent electronic device 20 to enter the bypass mode. The self-consumption of the intelligent electronic device 20 in the bypass mode is less than that in the normal working mode. In the normal working mode, the main power switch Q1 is in an open conduction state, while in the bypass mode, the bypass switch Q2 is in an open conduction state.
[0116] For example, in order to fully compatible with the original functions of the intelligent electronic device 20, the first function terminal FU1 and the second function terminal FU2 can reuse any two of the input terminal Input, the diagnosis enable terminal SEN, the first function selection terminal SEL1, the second function selection terminal SEL0, and the diagnosis release terminal Fault of the intelligent electronic device 20.
[0117] As an example, the first functional terminal FU1 can multiplex the diagnostic enable terminal SEN, and the second functional terminal FU2 can multiplex the input terminal Input. In other examples, the first functional terminal FU1 and the second functional terminal FU2 can also multiplex other terminals, which are not limited in the embodiments of the present application. It can be understood that, in other embodiments of the present application, the first functional terminal FU1 and / or the second functional terminal FU2 can also be a newly added terminal of the intelligent electronic device 20, or a combination of the newly added terminal and the original terminal, which are not limited in the embodiments of the present application.
[0118] Optionally, as shown in FIG. 2, the intelligent electronic switch 20 is connected with the microcontroller 40 through the first functional terminal FU1 and the second functional terminal FU2, so that the logic control unit 211 can receive the first signal from the microcontroller 40 through the first functional terminal FU1 and receive the second signal from the microcontroller 40 through the second functional terminal FU2. In other embodiments, the logic control unit 211 can also receive the first signal and the second signal from other devices or circuits through the first functional terminal FU1 and the second functional terminal FU2, which are not limited in the embodiments of the present application. Figure 5 Optionally, when the intelligent electronic switch 20 works in the normal working mode, if the first functional terminal FU1 receives the first signal and the second functional terminal FU2 receives the second signal, the logic control unit 211 can control the intelligent electronic switch 20 to enter the bypass mode, so as to reduce the self-consumption power of the intelligent electronic switch 20.
[0119] It can be understood that, other parts not described in detail in the embodiments of the present application can refer to the descriptions in other embodiments of the present application, which will not be described herein.
[0120] Optionally, on the basis of the above-mentioned embodiments, the embodiments of the present application further provide an integrated circuit chip, which includes the intelligent electronic switch 20 in the above-mentioned embodiments, i.e., the intelligent electronic switch 20 described above can be made on the same semiconductor substrate. Wherein, the power supply terminal VBAT is a power supply pin, the power ground terminal GND is a power ground pin, and the load output terminal OUT is a load output pin.
[0121] Optionally, other embodiments of the present application further provide a chip product, which can include the intelligent electronic switch 20 described above. As an example, the elements of the intelligent electronic switch 20 except the main power switch Q1 are located on a first integrated circuit chip, and the main power switch Q1 is located on a second integrated circuit chip, i.e., the first integrated circuit chip is made on one semiconductor substrate, and the second integrated circuit chip is made on another semiconductor substrate.
[0122]
[0123] As another example, the components of the intelligent electronic switch 20 other than the main power switch Q1 and the bypass switch Q2 are located on a first integrated circuit chip, and the main power switch Q1 and the bypass switch Q2 are located on a second integrated circuit chip.
[0124] The power supply end VBAT is a power supply pin, the power ground end GND is a power ground pin, and the load output end OUT is a load output pin. The power supply pin and the power ground pin are located on the first integrated circuit chip, and the load output pin is located on the second integrated circuit chip. In addition, the first integrated circuit chip further includes other pins, such as an input pin, a diagnostic enable pin, a diagnostic output pin, and a first drive pin, and the second integrated circuit chip further includes other pins, such as a second drive pin. The first drive pin is connected to the drive circuit and the second drive pin, and the second drive pin is connected to the control end of the main power switch Q1 and / or the bypass switch Q2. It can be understood that the first integrated circuit chip and the second integrated circuit chip can also add other pins, omit related pins, or combine related pins as needed. Here, the first integrated circuit chip and the second integrated circuit chip are packaged into one product.
[0125] In addition, in other embodiments of the present application, an automobile is also provided, which can be an electric vehicle, such as an electric passenger car or an electric commercial vehicle, or a hybrid vehicle or a fuel vehicle. As shown in Figures 1 to 5 The automobile includes a battery 10, a load 30, a microcontroller 40, and an intelligent electronic switch 20.
[0126] The microcontroller 40 is connected to the intelligent electronic switch 20 for controlling the intelligent electronic switch 20, and the intelligent electronic switch 20 feeds back its state and related parameter information to the microcontroller 40 for processing.
[0127] It can be understood that the intelligent electronic switch and the integrated circuit chip of the present embodiment are not limited to be used in automotive electronics, but can also be used in industrial automation, aerospace, etc. Here, no further description is given.
[0128] Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the application being indicated by the following claims.
[0129] It is to be understood that the application is not limited to the precise construction already described above and shown in the drawings, and that various modifications and changes can be made by those skilled in the art without departing from the scope of the application. The scope of the application should only be limited by the claims appended hereto.
Claims
1. An intelligent electronic switch, characterized in that, The intelligent electronic switch comprises a power supply end, a power ground end, a load output end, a switching circuit and a control circuit; the power supply end and the power ground end are used for being connected with a battery, and the load output end is used for being connected with a load; The switching circuit comprises a main power switch and a bypass switch, the control circuit comprises a logic control unit, a first driving unit and a current limiting driving unit, a first end of the main power switch and a first end of the bypass switch are connected with the power supply end or the power ground end, a second end of the main power switch and a second end of the bypass switch are connected with the load output end, a control end of the main power switch is connected with the first driving unit, a control end of the bypass switch is connected with the current limiting driving unit, and the first driving unit and the current limiting driving unit are further connected with the logic control unit; When the intelligent electronic switch works in a normal working mode, the logic control unit drives the main power switch to be turned on via the first driving unit; when the intelligent electronic switch works in a bypass mode, the logic control unit controls the bypass switch to be turned on via the current limiting driving unit and controls the main power switch to be turned off via the first driving unit; the area occupied by the bypass switch is smaller than the area occupied by the main power switch, the current value flowing through the bypass switch in the bypass mode is smaller than or equal to a first current limiting value set by the current limiting driving unit, and the first current limiting value is smaller than the maximum current value flowing through the main power switch in the normal working mode.
2. The intelligent electronic switch of claim 1, wherein, The intelligent electronic switch further comprises an overcurrent protection unit connected with the logic control unit, the overcurrent protection unit is connected with a preset overcurrent protection threshold value, and the overcurrent protection unit is further connected with a current sampling value, the current sampling value is used for representing the current value flowing through the main power switch; When the intelligent electronic switch works in the normal working mode, if the current sampling value is greater than the overcurrent protection threshold value, the current flowing through the main power switch is greater than the first current limiting value, and the overcurrent protection unit outputs an overcurrent signal to the first driving unit, so that the first driving unit controls the main power switch to be turned off; When the intelligent electronic switch works in the bypass mode, the overcurrent protection unit stops working.
3. The intelligent electronic device of claim 1, wherein, The intelligent electronic switch further comprises a current limiting protection unit connected with the logic control unit, the current limiting protection unit is connected with a preset current limiting protection threshold value, and the current limiting protection unit is further connected with a current sampling value, the current sampling value is used for representing the current value flowing through the main power switch; When the intelligent electronic switch works in the normal working mode, if the current sampling value is greater than the current limiting protection threshold value, the current flowing through the main power switch is greater than the first current limiting value, and the current limiting protection unit outputs a current limiting signal to the logic control unit, so that the logic control unit adjusts the size of a control signal output to the control end of the main power switch via the first driving unit, so as to reduce the current flowing through the main power switch, so that the current sampling value is smaller than or equal to the current limiting protection threshold value; when the intelligent electronic switch works in the bypass mode, the current limiting protection unit stops working.
4. The intelligent electronic device of claim 1, wherein, The intelligent electronic switch further comprises a first over-temperature protection unit, a second over-temperature protection unit and a third over-temperature protection unit connected with the logic control unit; The first over-temperature protection unit accesses a preset first over-temperature protection threshold and a first temperature sampling value, and the first temperature sampling value is used to represent the temperature of the main power switch; The second over-temperature protection unit accesses a preset second over-temperature protection threshold and a second temperature sampling value, and the second temperature sampling value is used to represent the temperature of the bypass switch; The third over-temperature protection unit accesses a preset third over-temperature protection threshold and a temperature difference value, and the temperature difference value is the difference between the temperature sampling value of the main power switch and the ambient temperature; In the normal working mode, the logic control unit controls the first over-temperature protection unit and the third over-temperature protection unit to work, when the first temperature sampling value is greater than the first over-temperature protection threshold, the first over-temperature protection unit outputs a first over-temperature signal, and / or, when the temperature difference value is greater than the third over-temperature protection threshold, the third over-temperature protection unit outputs a first over-temperature signal, and the logic control unit controls the main power switch to be turned off via the first driving unit according to the first over-temperature signal; In the bypass mode, the logic control unit controls the first over-temperature protection unit and the third over-temperature protection unit to stop working and controls the second over-temperature protection unit to work, when the second temperature sampling value is greater than the second over-temperature protection threshold, the second over-temperature protection unit outputs a second over-temperature signal, so that the logic control unit controls the bypass switch to be turned off via the current-limiting driving unit; wherein the power consumption of the second over-temperature protection unit is less than the power consumption of the first over-temperature protection unit.
5. The intelligent electronic device of claim 1, wherein, The current-limiting driving unit comprises a transistor and a constant current source, and the transistor and the bypass switch are of the same type; The transistor and the constant current source are connected to form a current-limiting driving branch, one end of the current-limiting driving branch is connected to one end of the bypass switch, the other end is connected to the power supply terminal or the power ground terminal, and the control end is connected to the logic control unit; the drain of the transistor is connected to the control end and the control end of the bypass switch; in the bypass mode, the logic control unit controls the current-limiting driving branch to be turned on, so that the current-limiting driving unit works, and the first current-limiting value is related to the current mirror ratio of the transistor and the power switch.
6. The intelligent electronic switch of claim 5, wherein, The transistor and the bypass switch are both N-type switch tubes, one end of the constant current source is connected to the power supply terminal, and the other end is connected to the drain of the transistor; the source of the transistor is connected to the source of the bypass switch, and both are connected to the load output terminal or the power ground terminal; or, The transistor and the bypass switch are both P-type switch tubes, one end of the constant current source is connected to the power ground terminal or the load output terminal, and the other end is connected to the drain of the transistor; the source of the transistor and the source of the bypass switch are connected and both are connected to the power supply terminal or the load output terminal.
7. The intelligent electronic device according to claim 5 or 6, characterized in that The bypass switch comprises a MOS tube, and the ratio of the first current-limiting value to the current value provided by the constant current source is equal to the ratio of the width-length ratio of the bypass switch to the width-length ratio of the transistor.
8. The intelligent electronic device according to any of claims 1 to 6, characterized in that In the normal working mode, the main power switch is turned on and works in the linear resistance region; in the bypass mode, the bypass switch is turned on and works in the saturation region.
9. The intelligent electronic device according to any of claims 1 to 6, characterized in that When the main power switch is an N-type switch, the first driving unit comprises a boosting module and a driving module, the boosting module is connected with the power supply end of the driving module, and the boosting module is used to make the output voltage greater than the voltage of the power supply end, so that the driving module drives the main power switch to be turned on in the normal working mode.
10. An integrated circuit chip, characterized by The intelligent electronic switch comprises the intelligent electronic switch according to any one of claims 1 to 9, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.
11. A chip product, characterized by The intelligent electronic switch comprises the intelligent electronic switch according to any one of claims 1 to 9, wherein the elements of the intelligent electronic switch except the main power switch are located on a first integrated circuit chip, and the main power switch is located on a second integrated circuit chip; or the elements of the intelligent electronic switch except the main power switch and the bypass switch are located on a first integrated circuit chip, and the main power switch and the bypass switch are located on a second integrated circuit chip. The power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin, the power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.
12. An automobile characterized by comprising: The intelligent electronic switch comprises the intelligent electronic switch according to any one of claims 1 to 9, or the integrated circuit chip according to claim 10, or the chip product according to claim 11. The intelligent electronic switch further comprises a battery, a load and a microcontroller, wherein the positive electrode of the battery is connected with the power supply end, the negative electrode of the battery is connected with the power ground end, one end of the load is connected with the load output end, the other end of the load is connected with the power ground end or the power supply end, and the microcontroller is connected with the intelligent electronic switch.
Citation Information
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