X-ray imaging detection module and manufacturing method thereof

Abstract

The present application discloses an X-ray imaging detection module and a manufacturing method thereof. The X-ray imaging detection module includes: a circuit board; a sensing material layer for converting X-rays penetrating the target to be inspected into electrical signals; a first circuit for processing the electrical signals provided by the sensing material; and a second circuit formed on the circuit board for supplying power to the sensing material layer and the first circuit and performing signal processing, wherein the X-ray imaging detection module also includes an interconnection layer, which is electrically connected to the sensing material layer and the first circuit respectively and provides electrodes for connecting the second circuit. The X-ray imaging detection module sets a high-density sensing material layer and a first circuit on the interconnection layer, and sets a low-density second circuit on the circuit board, so that the device has a simple structure, a simple manufacturing process, low cost, and good performance.

Description

Technical Field

[0001] The present invention relates to the technical field of radiation detectors, and more specifically, to an X-ray imaging detection module and a manufacturing method thereof. Background Art

[0002] With the development of society, X-ray imaging technology has become an increasingly important technology and is widely used in medical treatment, security inspection, industrial flaw detection, non-destructive testing and other fields.

[0003] At present, the image recognition accuracy of X-ray imaging detection modules based on X-ray imaging technology is gradually improving, requiring the pixels of X-ray imaging detection modules to be smaller and smaller. At the same time, in order to achieve improved production efficiency and faster detection speed, the number of rows of X-ray imaging detection modules is increasing. Therefore, the number of signals that X-ray sensors need to transmit is increasing, and the fan-out of signals in the circuit system is becoming more and more difficult. Detector modules based on special processes such as Through Silicon Via (TSV) process or high-end printed circuit boards (PCB) are expensive, difficult to apply, and have poor reliability.

[0004] Therefore, it is desired to provide an X-ray imaging detection module with better performance, more simplicity, feasibility and relatively low cost to solve the above problems. Summary of the invention

[0005] In view of the above problems, an object of the present invention is to provide an X-ray imaging detection module and a manufacturing method thereof, so that the device has a simple structure, a simple manufacturing process, a low cost and good performance.

[0006] According to one aspect of the present invention, there is provided an X-ray imaging detection module, comprising: a circuit board; a sensing material layer, used to convert X-rays penetrating an object to be inspected into electrical signals; a first circuit, used to process the electrical signals provided by the sensing material; and a second circuit, formed on the circuit board, used to supply power to the sensing material layer and the first circuit and to perform signal processing, wherein the X-ray imaging detection module further comprises an interconnection layer, which is electrically connected to the sensing material layer and the first circuit, respectively.

[0007] Optionally, the interconnection layer includes a first electrode area, a second electrode area and a third electrode area, a fourth electrode area is arranged on the circuit board, the first electrode area is electrically connected to the sensing material layer, the second electrode area is electrically connected to the first circuit layer, the first electrode area is electrically connected to the second electrode area, the second electrode area is electrically connected to the third electrode area, the third electrode area is connected to the fourth electrode area, and the fourth electrode area is electrically connected to the second circuit.

[0008] Optionally, the interconnection layer also includes a single-layer or multi-layer metal layer, adjacent metal layers are electrically isolated by an insulating dielectric layer, and the single-layer or multi-layer metal layer forms a plurality of signal interconnection lines to electrically connect the first electrode area with the second electrode area, and to electrically connect the second electrode area with the third electrode area.

[0009] Optionally, the insulating dielectric layer and the metal layer of the interconnection layer are alternately formed on a semiconductor substrate, the top of the interconnection layer also includes a passivation layer covering the top metal layer, the first electrode area includes a plurality of first electrodes, the second electrode area includes a plurality of second electrodes, the third electrode area includes a plurality of first pads, the passivation layer has openings at positions corresponding to the first electrode area, the second electrode area and the third electrode area, and the first electrode, the second electrode and the first pad are plated structures located in the openings.

[0010] Optionally, the sensing material layer includes a plurality of pixel units arranged in an array, and the plurality of pixel units are correspondingly connected to one end of the signal interconnection line of the interconnection layer; the first circuit includes a plurality of signal channels, and the plurality of signal channels are correspondingly connected to the other end of the signal interconnection line of the interconnection layer.

[0011] Optionally, the third electrode region of the interconnect layer includes a plurality of first pads, the fourth electrode region of the circuit board includes a plurality of second pads, and the plurality of first pads and the plurality of second pads are electrically connected via bonding wires.

[0012] Optionally, the first circuit includes a single or multiple integrated circuit chips.

[0013] Optionally, the integrated circuit chip is fixedly connected to the interconnect layer via a conductive material, and the conductive material is solder or conductive glue.

[0014] Optionally, the second circuit includes a plurality of discrete components, and the plurality of discrete components are connected to a plurality of electrode pads on the circuit board and are electrically connected via metal wires on the circuit board.

[0015] Optionally, the interconnect layer, the sensing material layer and the first circuit constitute at least a part of a component, and a plurality of the components are provided on a single circuit board.

[0016] According to a second aspect of the present invention, there is provided a method for manufacturing an X-ray imaging detection module, comprising: forming an interconnection layer; connecting a first circuit to the interconnection layer; connecting a sensing material layer to the interconnection layer; forming a second circuit on a circuit board; and assembling a component onto the circuit board, the component comprising the interconnection layer, the first circuit and the sensing material layer, wherein assembling the component onto the circuit board comprises: the interconnection layer comprises a plurality of first solder pads, the circuit board comprises a plurality of second solder pads, the plurality of first solder pads and the plurality of second solder pads are electrically connected via bonding wires, and the component is fixed to the circuit board by bonding.

[0017] Optionally, the interconnection layer includes a first electrode region, a second electrode region and a third electrode region, the first electrode region includes a plurality of first electrodes, the second electrode region includes a plurality of second electrodes, and the third electrode region includes a plurality of first pads, and forming the interconnection layer includes: injecting ions into a semiconductor substrate, the semiconductor substrate doped ions and the implanted ions having the same conductivity type; forming at least one isolation layer and at least one metal layer on the semiconductor substrate to form a plurality of signal interconnection lines, the at least one isolation layer and the at least one metal layer being alternately arranged, and a conductive contact being formed in the isolation layer so that the metal layers are interconnected; forming a passivation layer covering the top metal layer; forming openings at positions of the passivation layer corresponding to the first electrode region, the second electrode region and the third electrode region; and performing a plating process on the metal layer exposed to the opening to form a plating structure, the first electrode, the second electrode and the first pad being a plating structure located in the opening.

[0018] The X-ray imaging detection module and the manufacturing method thereof provided by the present invention concentrate the components that require high-density interconnection on the assembly, concentrate the components that require low-density interconnection on the circuit board, and finally interconnect the assembly and the circuit board. Before the assembly is assembled to the circuit board, the assembly can be tested separately, which ensures the yield of the assembly before assembly, simplifies the production process, and improves the product yield. When more than one assembly is assembled on a circuit board, the product yield is greatly improved and the cost of the product is reduced.

[0019] In some optional embodiments, by using a simple semiconductor high-density interconnection process, interconnection signal lines and metal electrodes are grown on a semiconductor substrate, and then a weldable and bondable electrode plating layer is formed on the metal electrode through a low-cost chemical plating process. Therefore, the interconnection layer of the semiconductor structure of the present application can be interconnected with the first circuit (chip), the circuit board and the sensing material layer using welding technology and / or bonding technology, thereby realizing a direct connection between the chip (interconnection layer) and the chip (first circuit). The present application welds the first circuit (semiconductor chip) on the interconnection layer, then assembles the sensing material layer on the interconnection layer, and finally assembles the module formed by the above process on the circuit board through a low-cost patch and bonding process. Through this new process and structure, the low cost of the new X-ray imaging detection module can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0021] Figure 1 A schematic diagram of an X-ray imaging system is shown;

[0022] Figure 2a shows a cross-sectional view of an X-ray imaging system;

[0023] Figure 2b shows a cross-sectional view of another X-ray imaging system;

[0024] Figure 3 Shown according to Figure 2b The waveform diagram of the charge pulse signal formed after the X-ray photons of the X-ray imaging system pass through the sensor material;

[0025] Figure 4a shows a top view of an X-ray imaging detection module according to an embodiment of the present invention;

[0026] Figure 4b shows a top view of an assembly according to an embodiment of the present invention;

[0027] Figure 4c A partial top view of an X-ray imaging detection module according to an embodiment of the present invention is shown;

[0028] Figure 4d shows a side view of an X-ray imaging detection module according to an embodiment of the present invention;

[0029] Figure 5 A cross-sectional view showing a method for manufacturing an X-ray imaging detection module according to an embodiment of the present invention;

[0030] Figure 6A flow chart of a method for manufacturing an X-ray imaging detection module according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0031] The present invention will be described in more detail below with reference to the accompanying drawings. In each of the accompanying drawings, the same elements are represented by similar reference numerals. For the sake of clarity, the various parts in the accompanying drawings are not drawn to scale. In addition, some well-known parts may not be shown in the drawings.

[0032] Many specific details of the present invention are described below, such as device structure, materials, dimensions, processing technology and techniques, so as to more clearly understand the present invention. However, as those skilled in the art will appreciate, the present invention may be implemented without following these specific details.

[0033] It should be understood that the connection between A and B in the embodiment of the present application means that A and B can be connected in series or in parallel, or A and B are connected through other devices, and the embodiment of the present application is not limited to this.

[0034] The following will describe an embodiment of the X-ray imaging detection module provided in the present application in conjunction with the accompanying drawings.

[0035] Figure 1 A schematic diagram of an X-ray imaging system is shown; Figure 2a A cross-sectional view of an X-ray imaging system is shown.

[0036] like Figure 1 and 2aAs shown, the X-ray imaging system 100 includes an X-ray imaging detection module 103 and a radiation source 101. Optionally, the X-ray imaging detection module 103 and the radiation source 101 are mounted on a frame. After the X-rays released by the radiation source 101 penetrate the object to be inspected 102, they are received by the X-ray imaging detection module 103. Specifically, the X-ray imaging detection module 103 includes a collimator 201, a scintillator array 202, a photodiode 203 and a circuit board 204 arranged in sequence from top to bottom. Optionally, the collimator 201, the scintillator array 202, and the photodiode 203 are bonded by glue, or the collimator 201 is mounted on a bracket and suspended above the scintillator array 202 through the bracket, and the scintillator array 202 and the photodiode 203 are bonded by glue. After the X-rays penetrate the inspected target 102, the collimator 201 absorbs most of the scattered rays, and the X-rays carrying the inspected target information are absorbed by the scintillator array 202 on the X-ray imaging detection module 103. The scintillator 202 converts the X-rays into light signals, which are absorbed and converted into charge signals by the photodiode 203 below. The charge signals are then converted into voltage signals or digital signals by the charge processing chip on the circuit board 204 (which can be FR4 or ceramic-based or other forms of substrate materials) and sent to the data acquisition and processing system, and then the image of the inspected target is reconstructed through the image algorithm and the inspection task is finally completed.

[0037] In the above application fields, most of them are used in the installation of detector cards / modules, and the midpoint of the card in the X direction is perpendicular to the focus of the ray source 101. The moving direction of the object to be inspected is perpendicular to the plane formed by the X and Y directions. In the detector system as described above, the X-ray imaging detection module 103 is cascaded along the X direction and spliced ​​into a length sufficient to cover the object to be inspected. Common materials of the scintillator array 202 are: CsI (Tl), CdWO4, Gd2O2S, GGAG, ZnSe and other scintillator materials.

[0038] In some embodiments, the scintillator array 202 is divided into a plurality of first pixels 301, and the photodiode 203 is divided into a plurality of second pixels 302, and each first pixel 301 corresponds to each second pixel 302. From a top view, the pixels 303 in the X-ray imaging detection module 103 include a first pixel 301 and a corresponding second pixel 302. The number of pixels in the Z direction is usually referred to as the number of rows, which is usually greater than / equal to 1, and the number of pixels in the X direction is usually referred to as the number of channels, which is usually greater than / equal to 2.

[0039] In other embodiments, the scintillator array 202 is a thin film scintillator, which is an integral planar layer without pixel division, and the photodiode 203 is divided into a plurality of second pixels 302, each of which receives a light signal provided by the scintillator in its corresponding area.

[0040] Figure 2b shows a cross-sectional view of another X-ray imaging system; Figure 3 Shown according to Figure 2b The waveform diagram of the charge pulse signal formed after the X-ray photons of the X-ray imaging system pass through the sensor material.

[0041] In recent years, a new type of detector (also called photon counting detector)104 is being developed, such as Figure 2b As shown. The difference between this novel detector and the X-ray imaging detection module 103 is that in this novel detector, the traditional scintillator array 202 and the photodiode array 203 are replaced by a novel conversion material 206 (common materials are CdTe, CdZnTe, pure Si, compound semiconductors, etc.), which can convert each X-ray photon corresponding to different energies of the X-ray into charge pulses of different heights. These pulses arrive randomly in the time direction, and the time interval is related to the intensity of the ray source and the characteristics and size of the conversion material, as shown in FIG. Figure 3 shown.

[0042] like Figure 2b The X-ray conversion material 206 of the novel detector 104 shown is composed of many pixels 304 at the microscopic level. The detector can be arranged in a single row or multiple rows in the Z direction, such as Figure 2b The row in the dotted box is a single row detector. As the number of rows arranged in the Z direction increases, the scanning speed and image quality of the detector can be continuously improved. 305 is an anode electrode, 306 is a cathode electrode, and the electrode material can be gold, platinum, aluminum and other metals.

[0043] The novel detector 104 receives X-rays and converts the rays into charge pulses through the conversion material 206. For example, a waveform diagram of an exemplary charge pulse 110 can be seen in Figure 3 The charge pulse passes through the pulse signal processing circuit or chip 220 on the circuit board, and the charge pulse arriving at a certain moment is sequentially conditioned in signal waveform, and counted according to the energy level (T1, T2, ..., Tn) or the voltage after the pulse peak is maintained is modulated and counted. The number of counts represents the intensity of the radiation within this energy threshold range. Finally, the data within different energy thresholds are processed and the image is reconstructed through the image algorithm.

[0044] The advantages of the common new detector 104 are relatively low cost and the ability to use large area pixels, up to 40mm 2,The large pixels or multiple rows of pixels can achieve a faster scanning speed, which can meet the general material or biological scanning inspection, and roughly classify inorganic / organic / mixtures. The performance of the traditional integral detector has reached a bottleneck period. For example, the increase of electronic noise has been close to the limit. At the same time, the scintillator of the integral detector converts a lot of information carrying the inspected target into a relatively single wavelength of light for output, which obliterates a lot of the material properties.

[0045] By designing a new type of detector 104, the electronic system noise of the system can be greatly reduced, the spatial resolution and contrast-to-noise ratio of the image can be improved, and the image resolution capability under small signal conditions can be improved. Since the X-ray continuous energy spectrum is divided and the image is reconstructed separately, the information of the target with different energy levels carried by the rays of different energy levels passing through the target can improve the recognition capability of the target material. At the same time, the dose used by the X-ray inspection equipment can also be reduced. In medical applications, K-edge imaging can be used to reduce the demand for contrast agents and improve the contrast of soft tissues.

[0046] With the continuous development of technology, medical / security / industrial X-ray inspection system equipment is gradually improving the recognition accuracy of images, requiring the pixels of the new detector 104 to be smaller and smaller, usually less than 0.8mm*0.8mm. At the same time, in order to achieve improved production efficiency and faster detection speed, the number of rows of new detectors 104 is also increasing, resulting in more and more X-ray sensor signals, and the fan-out of signals in the circuit system is becoming more and more difficult. The detector module based on special processes such as through silicon via (TSV) process or high-order PCB interconnection layer and finally assembled is expensive, difficult to apply, and has poor reliability.

[0047] Figure 4a shows a top view of an X-ray imaging detection module according to an embodiment of the present invention; Figure 4b shows a top view of an assembly according to an embodiment of the present invention; Figure 4c A partial top view of an X-ray imaging detection module according to an embodiment of the present invention is shown; Figure 4d A side view of an X-ray imaging detection module according to an embodiment of the present invention is shown.

[0048] like Figures 4a-4d As shown, in this embodiment, the X-ray imaging detection module 400 includes a circuit board 410, an interconnection layer 420, a sensing material layer 421, a first circuit 422 and a second circuit 411. Figure 4b As shown, the structure composed of the interconnection layer 420, the sensing material layer 421, and the first circuit 422 can be referred to as a component 440. For the sake of clarity, Figure 4bThe transparent solid line frames respectively show the sensing material layer 421 and the first circuit 422, so as to facilitate understanding of the positional relationship among the sensing material layer 421, the first circuit 422, the first electrode area and the second electrode area. Optionally, the X-ray imaging detection module 400 further includes a connector 412. The working principle of the X-ray imaging detection module 400 can be found in Figure 2a or Figure 2b , I will not go into details here.

[0049] The circuit board 410 is used to connect the second circuit 411 and the interconnection layer 420. The circuit board 410 also serves as a support board for the entire structure of the X-ray imaging detection module 400, and is, for example, a FR4 or ceramic-based or other substrate material. The circuit board 410 is, for example, rectangular or square, and a mounting hole 413 is provided at each corner to facilitate fixing the circuit board 410 to other structures, or to facilitate packaging of the X-ray imaging detection module 400.

[0050] The interconnection layer 420 is located on the circuit board 410, and the interconnection layer 420 includes a first electrode area 424 and a second electrode area 425, and optionally also includes a third electrode area 426. The interconnection layer 420 is a semiconductor structure, which is made based on a semiconductor wafer. For example, the interconnection layer 420 includes a semiconductor substrate and at least one isolation layer and at least one metal layer formed on the semiconductor substrate, and the at least one isolation layer and the at least one metal layer are arranged alternately, so that a plurality of signal interconnection lines 427, 428 and a plurality of first electrodes 424a located in the first electrode area 424, a plurality of second electrodes 425a located in the second electrode area 425, and a plurality of first pads 426a located in the third electrode area 426 can be formed, and the first electrode area 424 and the second electrode area 425 are connected to each other, and the second electrode area 425 and the third electrode area 426 are connected to each other. For example, through holes are distributed on the isolation layer to facilitate the connection between metal layers and the electrical connection between the metal layer and the semiconductor substrate. A passivation layer is also provided on the top of the interconnection layer 420, and the passivation layer covers the surface of the top metal layer (i.e., the metal layer farthest from the semiconductor substrate). There are openings on the passivation layer, and a plating structure is formed in the opening, and the plating structure serves as each first electrode, second electrode and first pad of the interconnection layer 420. The openings on the passivation layer are also called passivation layer windows. For example, the semiconductor substrate is a single crystal silicon wafer, and the metal layer can be a single metal layer or a multi-layer metal layer. For example, the signal interconnection lines 427 and 428 are made of gold, silver, aluminum or copper, and the first electrode 424a, the second electrode 425a, and the first pad 426a are made of gold, silver gold plating, aluminum nickel gold plating, copper nickel gold plating or conductive glue. The isolation layer is an oxide layer, and the passivation layer is an oxide or salt protective layer.

[0051] In traditional semiconductor processes, the electrodes of semiconductor structures are often directly electrically connected using an exposed top metal layer. This process is not suitable for directly interconnecting a semiconductor structure with another semiconductor structure. In an embodiment of the present invention, since a first electrode, a second electrode, and a first pad of a plating structure are formed on the top metal layer of the interconnection layer, the interconnection layer of the semiconductor structure can also be interconnected with the first circuit (chip), circuit board, and sensing material layer using welding technology and / or bonding technology. The present application realizes a direct connection between the chip (interconnection layer) and the chip (first circuit). Compared with traditional semiconductor structures, the interconnection layer of the present application can firmly interconnect structures such as circuit boards, circuit chips, and sensing material layers, and has high compatibility.

[0052] See also Figure 4a-4c In the interconnection layer 420, the first electrode area 424 includes a plurality of first electrodes 424a, the second electrode area 425 includes a plurality of second electrodes 425a, and the third electrode area 426 includes a plurality of first pads 426a. The first electrodes 424a are connected to the second electrodes 425a through signal interconnection lines 427 (also referred to as first wires), and the second electrodes 425a are connected to the first pads 426a through signal interconnection lines 428 (also referred to as second wires).

[0053] The first electrode region 424 is used to connect the sensing material layer 421, and the sensing material layer 421 is used to convert the X-rays to be detected related to the detected object into electrical signals. Figure 2a As shown, the sensing material layer 421 includes, for example, a scintillator array and a photodiode array. Common materials of the scintillator array 202 are: CsI(Tl), CdWO4, Gd2O2S, GGAG, ZnSe and other scintillator materials. When the working principle of the X-ray imaging detection module 400 is as follows Figure 2bAs shown, the sensing material layer 421 is a new type of conversion material, and common materials are CdTe, CdZnTe, pure Si, compound semiconductors, etc. Optionally, the sensing material layer 421 includes a plurality of pixel units arranged in an array, the first electrode region 424 includes a plurality of first electrodes 424a corresponding to the plurality of pixel units, the plurality of first electrodes 424a are electrically connected to one end of the signal interconnection line 427 of the interconnection layer 420 in a one-to-one correspondence manner, and the first circuit includes a plurality of signal channels, and the plurality of signal channels are electrically connected to the other end of the signal interconnection line 427 of the interconnection layer in a one-to-one correspondence manner. Optionally, a support structure is provided between the sensing material layer 421 and the interconnection layer 420, so that the sensing material layer 421 and the interconnection layer 420 have a predetermined spacing, and the pixel unit is connected to the corresponding first electrode 424a through a conductive material. The electrode 430 can, for example, provide a high voltage power supply, which provides high voltage electricity to the sensing material layer 421 through the wire 431. The wire 431 can be a flexible circuit board connection wire or an electrode bonding wire.

[0054] The second electrode area 425 is used to connect to the first circuit 422. The second circuit 411 provides power to the first circuit 422 and the sensing material layer 421. The first circuit 422 is used to cooperate with the second circuit 411 on the circuit board 410 to complete signal processing, and finally send the data containing image information to the upper-level system for image reconstruction through the connector 412 on the circuit board 410.

[0055] The first circuit 422 and the second circuit 411 process the electrical signal to obtain image information of the inspected object. The first circuit 422 is, for example, a circuit with a high-density interconnection process such as a chip, an integrated circuit or a microprocessor, and the second circuit 411 includes some electronic components and / or low-density packaged chips, which are interconnected with the chips through wires on the circuit board and have a lower circuit density. For example, these circuit components may include processors, capacitors, resistors, inductors and other electronic components with larger volumes, so their circuit density is relatively low.

[0056] For example, the first circuit 422 is first flipped and soldered to the interconnection layer 420 through a reflow soldering process. After cleaning and drying, an electrode is formed in the first electrode area 424 of the interconnection layer 420 through a conductive glue, and then the anode of the sensing material layer 421 is coupled to the first electrode area 424 of the interconnection layer 420, and the conductive glue is cured. In order to keep a certain distance between the sensing material layer 421 and the interconnection layer 420, a support ball can be added to the conductive glue, or a support sheet can be added between the two. After cleaning and drying, glue is filled between the interconnection layer 420 and the first circuit 422 and the sensing material layer 421 to enhance its reliability and prevent moisture / dust from entering between the two, forming leakage and thus affecting the function and performance. Through the above process, the interconnection layer 420, the sensing material layer 421, and the first circuit 422 form a component.

[0057] As an example, in order to complete the connection between the interconnection layer 420 and the circuit board 410, the interconnection layer 420 includes a third electrode area 426, and the electrode spacing of the third electrode area is designed according to the spacing suitable for the circuit board electrode design rule, which can realize the conversion from high-density interconnection to low-density interconnection. The circuit board is provided with a fourth electrode area 414, and the second circuit 411 is connected to the fourth electrode area 414. The first pad 426a in the third electrode area 426 of the interconnection layer 420 is electrically connected to the second pad 414a in the fourth electrode area 414 of the circuit board through the bonding wire 415 in a one-to-one correspondence, and the interconnection layer 420 and the circuit board 410 are mechanically connected through a bonding process. For example, epoxy / silicone / polyurethane glue is used to mechanically connect the interconnection layer 420 and the circuit board 410. Through the wire protection process, the bonding wire 415 is filled with glue to enhance reliability and prevent moisture and dust from entering. The sensor cathode electrode 306 of the component and the electrode of the circuit board 410 or the connector 430 are interconnected through a bonding process or a connector, and finally the X-ray imaging detection module 400 designed in this article is formed.

[0058] In some embodiments, the X-ray imaging detection module 400 includes a plurality of components formed by an interconnection layer 420, a sensing material layer 421, and a first circuit 422, and the plurality of components are arranged on a circuit board 410. Before assembling the interconnection layer 420 and the circuit board 410, the component 106 can be tested separately, so that the yield of the component is guaranteed before assembly, the production process is simplified, and the product yield is improved. When more than one component is assembled on a circuit board 410, the yield of the product is greatly improved, the cost of the product is reduced, and the performance of the product is improved.

[0059] Figure 5 FIG. 1 is a cross-sectional view showing a method for manufacturing an X-ray imaging detection module according to an embodiment of the present invention. Figure 5, an exemplary step of forming an interconnection layer is shown. In this example, the semiconductor substrate is an N-type single crystal silicon wafer.

[0060] First, provide a single crystal silicon wafer 501, such as Figure 5 As shown in step S1 in the figure, the single crystal silicon wafer parameters suitable for interconnect layer fabrication are calculated, such as the appropriate resistivity, and the parameters of the subsequent implantation steps based on the N-type substrate (or the P-type substrate).

[0061] Further, ions are implanted on the semiconductor substrate, and the conductivity type of the semiconductor substrate doped ions and the implanted ions is the same. For example, phosphorus ions, arsenic ions or antimony ions are implanted on a single crystal silicon wafer, and after the implantation is completed, the N+ type junction 502 is activated, such as Figure 5 In some other embodiments, if the semiconductor substrate is a P-type substrate, the implanted ions are boron ions, which are activated to form a P+ type junction after the implantation is completed.

[0062] like Figure 5 As shown in steps S3-S10, at least one isolation layer and at least one metal layer are formed on the semiconductor substrate, and the at least one isolation layer and the at least one metal layer are arranged alternately. The at least one metal layer includes a plurality of first electrodes located in the first electrode region, a plurality of second electrodes located in the second electrode region, a plurality of first pads located in the third electrode region, a first wire connecting at least a portion of the plurality of first electrodes with at least a portion of the plurality of second electrodes, and a second wire connecting at least a portion of the plurality of second electrodes with at least a portion of the plurality of first pads.

[0063] Specifically, a first isolation layer 503 is generated, such as Figure 5 As shown in step S3.

[0064] Further, etching is performed on the first isolation layer 503 to form a contact hole that can be connected to the N+ type (or P+ type) junction, such as Figure 5 As shown in step S4.

[0065] Further, a first metal layer 504 is deposited, such as Figure 5 As shown in step S5.

[0066] Further, the first metal layer 504 is etched to form a first layer of signal interconnection lines, such as Figure 5 As shown in step S6.

[0067] Further, a second isolation layer 505 is generated on the formed first signal interconnection layer, such as Figure 5 As shown in step S7.

[0068] Further, the second isolation layer 505 is etched to form a through hole that can be connected to the first metal layer, such as Figure 5 As shown in step S8.

[0069] Further, a second metal layer 506 is deposited, such as Figure 5 As shown in step S9.

[0070] Further, the second metal layer 506 is etched to form a second layer of signal interconnection lines, such as Figure 5 As shown in step S10.

[0071] The above steps are only for two metal layers. If there are multiple metal layers, the subsequent steps for each metal layer are repeated. Figure 5 The steps shown in steps S7-S10 in .

[0072] Further, a passivation layer is formed on at least one isolation layer and at least one metal layer. For example, a passivation layer 507 is deposited on the last layer of signal interconnection lines. Figure 5 As shown in step S11.

[0073] Further, the passivation layer 507 on the last metal layer of the electrode position to be used is etched to form an opening, for example, an opening is formed at the position of the passivation layer corresponding to the first electrode area, the second electrode area and the third electrode area, so that the last metal electrode is exposed, such as Figure 5 As shown in step S12.

[0074] Furthermore, the entire wafer is subjected to surface coating treatment to form a coating structure suitable for welding or bonding process on the surface of the last metal electrode layer. For example, a coating process is performed on the metal layer exposed to the opening to form a coating structure, and the coating structure at least includes a plurality of first electrodes, a plurality of second electrodes and a plurality of first pads located in the opening.

[0075] In this step, a first electrode, a second electrode and a first pad of a plated structure are formed on the top metal layer of the interconnection layer, so the interconnection layer of the semiconductor structure can also be interconnected with the first circuit (chip), the circuit board and the sensing material layer by welding technology and / or bonding technology.

[0076] Furthermore, the wafer is diced and cut to obtain an interconnect layer of a required size.

[0077] Figure 6 A flow chart of a method for manufacturing an X-ray imaging detection module according to an embodiment of the present invention is shown.

[0078] In step S601, an interconnection layer is formed, and the interconnection layer includes a first electrode region and a second electrode region. The steps of forming the interconnection layer can be seen in Figure 5 , I will not go into details here.

[0079] In step S602, the first circuit is connected to the interconnect layer. Specifically, the first circuit is connected to the second electrode region.

[0080] In step S603, the sensing material layer is connected to the interconnection layer. Specifically, the sensing material layer is connected to the first electrode region, and the sensing material layer is used to convert the X-rays to be detected related to the detected object into electrical signals.

[0081] In step S604, a second circuit is formed on the circuit board. Optionally, the density of the second circuit is less than the density of the first circuit.

[0082] In step S605, assembling the component onto the circuit board, the component including the interconnection layer, the first circuit and the sensing material layer. Specifically, the interconnection layer is connected to the circuit board, the circuit board is connected to the second circuit, and the first circuit and the second circuit are used to process the electrical signal to obtain the image information of the detected object.

[0083] Optionally, a fourth electrode area is provided on the circuit board, and connecting the interconnection layer to the circuit board includes: connecting the second circuit to the fourth electrode area via a metal wire located on the circuit board, electrically connecting the third electrode area of ​​the interconnection layer to the fourth electrode area of ​​the circuit board via a bonding wire, so that the first circuit located on the interconnection layer is electrically connected to the second circuit; and mechanically connecting the interconnection layer and the circuit board through a bonding process.

[0084] In summary, the embodiment of the present invention provides an X-ray imaging detection module and a manufacturing method thereof, which concentrates components that require high-density interconnection on the assembly, concentrates components that require low-density interconnection on the circuit board, and finally interconnects the assembly and the circuit board. Before the assembly is assembled to the circuit board, the assembly can be tested separately, which ensures the yield of the assembly before assembly, simplifies the production process, and improves the product yield. When more than one assembly is assembled on a circuit board, the product yield is greatly improved and the cost of the product is reduced.

[0085] In some optional embodiments, by using a simple semiconductor high-density interconnection process, interconnection signal lines and electrodes are grown on a semiconductor substrate, and then a low-cost chemical plating process is used to form a weldable and bondable electrode plating layer. Then the first circuit (semiconductor chip) is welded on the interconnection layer, and then the sensing material layer is assembled on the interconnection layer. Finally, the module formed by the above process is assembled on the circuit board through a low-cost patch and bonding process. Through this new process and structure, the low cost of the new X-ray imaging detection module can be achieved.

[0086] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0087] According to the embodiments of the present invention as described above, these embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and changes can be made based on the above description. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can make good use of the present invention and the modified use based on the present invention. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. An X-ray imaging detection module, comprising: Circuit boards; A sensing material layer, used to convert X-rays penetrating the inspected object into electrical signals; A first circuit, used for processing the electrical signal provided by the sensing material; as well as A second circuit is formed on the circuit board and is used to supply power to the sensing material layer and the first circuit and perform signal processing. The X-ray imaging detection module further comprises an interconnection layer, wherein the interconnection layer is electrically connected to the sensing material layer and the first circuit respectively. The interconnection layer includes a first electrode area, a second electrode area and a third electrode area, the first electrode area includes a plurality of first electrodes, the second electrode area includes a plurality of second electrodes, the third electrode area includes a plurality of first pads, a fourth electrode area is provided on the circuit board, and the fourth electrode area of ​​the circuit board includes a plurality of second pads, The first electrode region is electrically connected to the sensing material layer, the second electrode region is electrically connected to the first circuit layer, the first electrode region is electrically connected to the second electrode region, the second electrode region is electrically connected to the third electrode region, the third electrode region is connected to the fourth electrode region, and the fourth electrode region is electrically connected to the second circuit. The density of the second circuit is lower than the density of the first circuit.

2. The X-ray imaging detection module according to claim 1, wherein: The interconnection layer includes a single layer or multiple layers of metal layers, and adjacent metal layers are electrically isolated by an insulating dielectric layer. The single layer or multiple layers of metal layers form multiple signal interconnection lines to electrically connect the first electrode area with the second electrode area, and to electrically connect the second electrode area with the third electrode area.

3. The X-ray imaging detection module according to claim 2, wherein: The sensing material layer includes a plurality of pixel units arranged in an array, and the plurality of pixel units are correspondingly connected to one end of the signal interconnection line of the interconnection layer. The first circuit includes a plurality of signal channels, and the plurality of signal channels are correspondingly connected to the other end of the signal interconnection line of the interconnection layer.

4. The X-ray imaging detection module according to claim 2, wherein: The insulating dielectric layer and the metal layer of the interconnection layer are alternately formed on a semiconductor substrate, and the top of the interconnection layer further includes a passivation layer covering the top metal layer. The passivation layer has openings at positions corresponding to the first electrode region, the second electrode region, and the third electrode region, and the first electrode, the second electrode, and the first pad are plated structures located in the openings.

5. The X-ray imaging detection module according to claim 1, wherein: The plurality of first pads and the plurality of second pads are electrically connected through bonding wires.

6. The X-ray imaging detection module according to claim 1, wherein: The first circuit includes a single or multiple integrated circuit chips.

7. The X-ray imaging detection module according to claim 6, wherein: The integrated circuit chip is fixedly connected to the interconnection layer through a conductive material, and the conductive material is a soldering agent or a conductive adhesive.

8. The X-ray imaging detection module according to claim 1, characterized in that: The second circuit includes a plurality of discrete components connected to a plurality of electrode pads on the circuit board and electrically connected via metal wires on the circuit board.

9. The X-ray imaging detection module according to claim 1, wherein: The interconnect layer, the sensing material layer and the first circuit constitute at least a portion of an assembly, and a plurality of the assemblies are provided on a single circuit board.

10. A method for manufacturing an X-ray imaging detection module, comprising: forming an interconnection layer; connecting a first circuit to the interconnect layer; connecting a sensing material layer to the interconnect layer; forming a second circuit on the circuit board; as well as assembling a component onto the circuit board, the component comprising the interconnect layer, the first circuit and the sensing material layer, The interconnection layer includes a first electrode area, a second electrode area and a third electrode area, the first electrode area includes a plurality of first electrodes, the second electrode area includes a plurality of second electrodes, the third electrode area includes a plurality of first pads, a fourth electrode area is provided on the circuit board, and the fourth electrode area of ​​the circuit board includes a plurality of second pads, The first electrode region is electrically connected to the sensing material layer, the second electrode region is electrically connected to the first circuit layer, the first electrode region is electrically connected to the second electrode region, the second electrode region is electrically connected to the third electrode region, the third electrode region is connected to the fourth electrode region, the fourth electrode region is electrically connected to the second circuit, and the density of the second circuit is less than the density of the first circuit. Assembling the component onto the circuit board includes: electrically connecting the plurality of first pads and the plurality of second pads via bonding wires, and fixing the component to the circuit board by bonding.

11. The manufacturing method according to claim 10, wherein: Forming the interconnect layer comprises: Implanting ions on a semiconductor substrate, wherein the semiconductor substrate is doped with ions of the same conductivity type as the implanted ions; Forming at least one isolation layer and at least one metal layer on the semiconductor substrate to form a plurality of signal interconnection lines, wherein the at least one isolation layer and the at least one metal layer are arranged alternately, and conductive contacts are formed in the isolation layer so that the metal layers are connected to each other; forming a passivation layer covering the top metal layer; forming openings at positions of the passivation layer corresponding to the first electrode region, the second electrode region, and the third electrode region; and A plating process is performed on the metal layer exposed to the opening to form a plated structure, and the first electrode, the second electrode and the first pad are the plated structure located in the opening.

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