InGaAs detector

Abstract

The invention belongs to the field of semiconductor optoelectronic devices, and provides an InGaAs detector which comprises a substrate, an In < x > Al < 1-x > As gradient layer, an In < y > Al < 1-y > As component overshoot layer, an n-type In < z > Al < 1-z > As buffer layer, an i-type InGaAs absorption layer and an n-type InAl < As > cap layer which are sequentially stacked, and x < = z < = y. According to the invention, the component overshoot layer is arranged and doping control and regulation are carried out on the component overshoot layer, so that the effect of greatly improving the photoluminescence performance of the InGaAs detector material is effectively realized. The InGaAs detector can be manufactured through sequential molecular beam epitaxial growth, and the component overshoot layer structure can be popularized to design of other material structures with asymmetry in crystal orientation and has good universality.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor optoelectronic devices, and in particular relates to an InGaAs detector. Background Art

[0002] There are many important applications in the near-infrared band. For example, quartz optical fiber is in the low-loss and low-dispersion windows at 1.31 microns and 1.55 microns, respectively. Lasers and detectors at these two wavelengths are widely used in long-wavelength optical fiber communications. InGaAs detectors are widely used in optical fiber communication systems due to their good performance.

[0003] InP-based InGaAs materials have high absorption coefficient, high mobility, good physical and chemical stability and radiation resistance. The detectors made from them have advantages such as high operating temperature, high quantum efficiency, high sensitivity and good radiation resistance, and are an important choice for short-wave infrared detectors. InGaAs short-wave infrared detectors also have great potential and application prospects in aerospace remote sensing such as resource surveys, atmospheric composition analysis and deep space exploration.

[0004] The development direction of InGaAs detectors mainly lies in two aspects: one is to improve device performance and increase the scale of the focal plane; the other is to develop a wider detection spectrum, so that the short-wave direction is extended to the visible light range, and the long-wave direction continues to develop to 3μm wavelength. In recent years, countries have made a lot of efforts to improve the scale and performance level of near-infrared InGaAs detector focal plane arrays, and most companies have the ability to prepare large arrays. The center distance of the large array is between 12.5μm and 20μm, and the large array has excellent performance in detection rate, noise, quantum efficiency, effective pixel rate, etc.

[0005] Signal-to-noise ratio is the core performance index of near-infrared InGaAs focal planes. Reducing noise and improving signal-to-noise ratio are crucial to improving the imaging quality of infrared focal plane components. Domestic and foreign research institutions have made many efforts to reduce the noise of InGaAs focal planes, including reducing noise by optimizing circuit structure and reducing dark current density.

[0006] Focal plane noise mainly comes from focal plane coupling noise and detector noise. When the circuit parameters are determined, focal plane coupling noise determines the background noise level of the focal plane under short integration time. Focal plane coupling noise is affected by detector capacitance, which is directly affected by the doping concentration of the epitaxial material absorption layer. Detector noise is affected by detector dark current, which determines the total noise level of the focal plane under long integration time. It can be seen from the factors affecting focal plane noise that low doping concentration absorption layer epitaxial materials are very helpful in reducing focal plane noise.

[0007] At the same time, the increase in the minority carrier lifetime of the detector material is of great help in improving the focal plane performance, and the increase in the photoluminescence intensity in the detector material performance can reflect the increase in the minority carrier lifetime to a certain extent. Therefore, improving the photoluminescence performance is one of the directions to improve the performance of the detector material. Summary of the invention

[0008] In view of the problems existing in the prior art, the object of the present invention is to provide a novel InGaAs detector to effectively improve the photoluminescence performance, thereby facilitating the acquisition of a high-performance InGaAs detector.

[0009] To achieve this object, the present invention adopts the following technical solutions:

[0010] In a first aspect, the present invention provides an InGaAs detector, comprising a substrate, an InGaAs layer, and a plurality of layers stacked in sequence. x Al 1-x As graded layer, In y Al 1-y As component overshoot layer, n-type In z Al 1-z As buffer layer, i-type InGaAs absorption layer and n-type InAlAs cap layer, wherein x≤z≤y.

[0011] The present invention realizes the release of residual stress during the material growth process by arranging a component overshoot layer, thereby improving the photoluminescence performance of the InGaAs detector material.

[0012] The following are preferred technical solutions of the present invention, but are not intended to be limitations of the technical solutions provided by the present invention. Through the following technical solutions, the technical objectives and beneficial effects of the present invention can be better achieved and realized.

[0013] As a preferred technical solution of the present invention, the x≤z≤y is preferably x≤z<y, and further preferably x<z<y.

[0014] As a preferred technical solution of the present invention, the i-type InGaAs absorption layer includes In with a fixed composition a Ga 1-a As material, where 0.52≤a≤1.

[0015] As a preferred technical solution of the present invention, the i-type InGaAs absorption layer is a high In component In a Ga 1-a As material, where 0.8≤a≤1.

[0016] As a preferred technical solution of the present invention, the n-type In z Al 1-zThe As buffer layer includes a fixed composition of In that is lattice-matched to the i-type InGaAs absorber layer. z Al 1-z As material, doping concentration is 1×10 17 cm -3 ~5×10 18 cm -3 , where 0.52≤z≤1.

[0017] As a preferred technical solution of the present invention, the In y Al 1-y As component overshoot layer is n-type In y Al 1-y As component overshoot layer, thickness ≥50nm.

[0018] The present invention appropriately eliminates the different effects of residual stresses in different crystal directions in component overshoot by doping the overshoot layer, thereby ensuring further improvement of the photoluminescence performance of the InGaAs detector material.

[0019] As a preferred technical solution of the present invention, the In y Al 1-y As composition overshoot layer includes linear graded composition Si-doped In y Al 1-y As material, doping concentration is 5×10 15 cm -3 ~3×10 18 cm -3 , where z≤y≤z+0.05.

[0020] It should be noted that the In y Al 1-y When the As component overshoot layer is a linear gradient component, in the linear gradient component, the minimum value of y is preferably ≥z, and the maximum value of y is preferably ≤z+0.05.

[0021] As a preferred technical solution of the present invention, the In x Al 1-x As graded layer is i-type In x Al 1-x As transition layer.

[0022] As a preferred technical solution of the present invention, the In x Al 1-x As graded layer includes linear gradient component In x Al 1- x As material, where 0.52≤x≤z.

[0023] It should be noted that the Inx Al 1-x When the As graded layer is a linear gradient component, in the linear gradient component, the minimum value of x is preferably ≥0.52, and the maximum value of x is preferably ≤z.

[0024] As a preferred technical solution of the present invention, the n-type InAlAs cap layer includes In with a fixed composition lattice-matched with the i-type InGaAs absorption layer. w Al 1-w As material, doping concentration is 1×10 16 cm -3 ~5×10 16 cm -3 , where 0.52≤w≤1.

[0025] As a preferred technical solution of the present invention, the substrate comprises an InP (001) substrate. (001) represents the crystal orientation.

[0026] Illustratively, the present invention further provides a method for manufacturing the InGaAs detector according to the first aspect, the manufacturing method comprising:

[0027] In was grown on the substrate by molecular beam epitaxy. x Al 1-x As graded layer, In y Al 1-y As component overshoot layer (x≤y), n-type In z Al 1-z As buffer layer (x≤z≤y), i-type InGaAs absorption layer and n-type InAlAs cap layer.

[0028] Compared with the prior art solutions, the present invention has at least the following beneficial effects:

[0029] In the InGaAs detector of the present invention, by setting In y Al 1-y The As component overshoot layer improves the photoluminescence performance of the InGaAs detector material;

[0030] The present invention is through In y Al 1-y The As component overshoot layer is doped to form an n-type component overshoot layer, which ensures further improvement of the photoluminescence performance of the InGaAs detector material;

[0031] The InGaAs detector of the present invention can be manufactured by sequential molecular beam epitaxial growth. The scheme of setting the overshoot layer of the present invention is equivalent to providing a method for improving the performance of the InGaAs detector material, and the component overshoot layer structure can also be extended to other material structure designs with crystal orientation asymmetry, and has good versatility. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic diagram of the InGaAs detector described in Example 1 of the present invention;

[0033] Figure 1 In, 1-substrate, 2-In x Al 1-x As graded layer, 3-In y Al 1-y As component overshoot layer, 4-n type In z Al 1-z As buffer layer, 5-i-type InGaAs absorption layer, 6-n-type InAlAs cap layer;

[0034] Figure 2 1 is a graph showing the photoluminescence test results of the InGaAs detectors obtained in Examples 1 to 7. DETAILED DESCRIPTION

[0035] The technical solution of the present invention is further illustrated below through specific implementation methods.

[0036] It should be clear to those skilled in the art that the embodiments are only intended to help understand the present invention and should not be considered as specific limitations of the present invention.

[0037] In some specific embodiments, the present invention provides an InGaAs detector, such as Figure 1 As shown, it includes a substrate 1, In x Al 1-x As graded layer 2, In y Al 1-y As component overshoot layer 3, n-type In z Al 1-z As buffer layer 4, i-type InGaAs absorption layer 5 and n-type InAlAs cap layer 6, wherein x≤z≤y.

[0038] In one embodiment, x≤z≤y; further, x≤z<y, and further, x<z<y.

[0039] In one embodiment, the i-type InGaAs absorption layer 5 includes a fixed composition of In a Ga 1-aAs material, wherein 0.52≤a≤1, for example, a can be 0.52, 0.55, 0.58, 0.6, 0.63, 0.65, 0.68, 0.7, 0.73, 0.75, 0.78, 0.8, 0.82, 0.84, 0.86, 0.88, 0.9, 0.92, 0.95, 0.98 or 1, but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0040] Furthermore, the i-type InGaAs absorption layer 5 is a high In component In a Ga 1-a As material, where 0.8≤a≤1.

[0041] In one embodiment, the n-type In z Al 1-z The As buffer layer 4 includes a fixed composition of InGaAs that is lattice-matched with the i-type InGaAs absorption layer 5. z Al 1-z As material, doping concentration is 1×10 17 cm -3 ~5×10 18 cm -3 , for example 1×10 17 cm -3 , 2×10 17 cm -3 , 3×10 17 cm -3 , 4×10 17 cm -3 , 5×10 17 cm -3 , 6×10 17 cm -3 ,7×10 17 cm -3 , 8×10 17 cm -3 ,9×10 17 cm -3 , 1×10 18 cm -3 , 1.3×10 18 cm -3 , 1.5×10 18 cm -3 , 1.8×10 18 cm -3 , 2×10 18 cm -3 , 2.3×10 18 cm -3 , 2.5×10 18 cm -3, 2.8×10 18 cm -3 , 3×10 18 cm -3 , 3.3×10 18 cm -3 , 3.5×10 18 cm -3 , 3.8×10 18 cm -3 , 4×10 18 cm -3 4.2×10 18 cm -3 , 4.5×10 18 cm -3 , 4.8×10 18 cm -3 or 5×10 18 cm -3 etc., wherein 0.52≤z≤1, for example, z can be 0.52, 0.55, 0.58, 0.6, 0.63, 0.65, 0.68, 0.7, 0.73, 0.75, 0.78, 0.8, 0.82, 0.84, 0.86, 0.88, 0.9, 0.92, 0.95, 0.98 or 1, etc., but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0042] In one embodiment, the In y Al 1-y As composition overshoot layer 3 is n-type In y Al 1-y The As component overshoot layer 3 has a thickness ≥50nm, for example, 50nm, 51nm, 52nm, 53nm, 54nm, 55nm, 57nm, 58nm, 59nm, 60nm, 61nm, 62nm, 63nm, 64nm, 65nm, 66nm, 67nm, 68nm, 69nm, 70nm, 71nm, 72nm, 73nm, 74nm, 75nm, 76nm, 77nm, 78nm, 79nm or 80nm, but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0043] In one embodiment, the In y Al 1-y As composition overshoot layer 3 includes Si-doped In y Al 1-y As material, doping concentration is 5×10 15 cm -3 ~3×10 18 cm -3, such as 5×10 15 cm -3 、6×10 15 cm -3 、7×10 15 cm -3 、8×10 15 cm -3 、9×10 15 cm -3 、1×10 16 cm -3 、1.5×10 16 cm -3 、2×10 16 cm -3 、2.5×10 16 cm -3 、3×10 16 cm -3 、3.5×10 16 cm -3 、4×10 16 cm -3 、4.5×10 16 cm -3 、5×10 16 cm -3 、5.5×10 16 cm -3 、6×10 16 cm -3 、6.5×10 16 cm -3 、7×10 16 cm -3 、7.5×10 16 cm -3 、8×10 16 cm -3 、8.5×10 16 cm -3 、9×10 16 cm -3 、9.5×10 16 cm -3 、1×10 17 cm -3 、2×10 17 cm -3 、3×10 17 cm -3 、4×10 17 cm -3 、5×10 17 cm -3 、6×10 17 cm -3 、7×10 17 cm-3 , 8×10 17 cm -3 ,9×10 17 cm -3 , 1×10 18 cm -3 , 1.3×10 18 cm -3 , 1.5×10 18 cm -3 , 1.8×10 18 cm -3 , 2×10 18 cm -3 , 2.3×10 18 cm -3 , 2.5×10 18 cm -3 , 2.8×10 18 cm -3 or 3×10 18 cm -3 etc.; wherein z≤y≤z+0.05, for example, in a linear gradient component, y may include the following numerical relationships with z: y=z, y=z+0.001, y=z+0.003, y=z+0.005, y=z+0.008, y=z+0.01, y=z+0.012, y=z+0.015, y=z+0.018, y=z+0.02, y=z+0.022, y=z+0.025, y=z+0.028, y=z+0.03, y=z+0.033, y=z+0.035, y=z+0.038, y=z+0.042, y=z+0.045, y=z+0.048 Or y=z+0.05, etc.; specifically, for example, when 0.52≤z≤1, while satisfying the relationship z≤y≤z+0.05, in the linear gradient component, y can include 0.52, 0.521, 0.53, 0.55, 0.553, 0.58, 0.588, 0.61, 0.633, 0.658, 0.688, 0.703, 0.735, 0.758, 0.78, 0.808, 0.823, 0.845, 0.861, 0.888, 0.903, 0.921, 0.958, 0.98 or 1, etc., but is not limited to the listed values, and other values ​​not listed within the above numerical range are equally applicable.

[0044] In one embodiment, the In x Al 1-x As graded layer 2 is i-type In x Al 1-x As graded layer 2.

[0045] In one embodiment, the In x Al 1-x As graded layer 2 includes linearly graded components of In x Al 1-x As material, wherein 0.52≤x≤z; specifically, for example, when 0.52≤z≤1, while satisfying the relationship of 0.52≤x≤z, in the linear gradient component, x may include 0.52, 0.521, 0.53, 0.55, 0.553, 0.58, 0.588, 0.61, 0.633, 0.658, 0.688, 0.703, 0.735, 0.758, 0.78, 0.808, 0.823, 0.845, 0.861, 0.888, 0.903, 0.921, 0.958, 0.98 or 1, etc., but is not limited to the listed values, and other values ​​not listed within the above numerical range are equally applicable.

[0046] In one embodiment, the n-type InAlAs cap layer 6 includes a fixed composition In that is lattice-matched to the i-type InGaAs absorption layer 5. w Al 1-w As material, doping concentration is 1×10 16 cm -3 ~5×10 16 cm -3 , for example 1×10 16 cm -3 , 1.3×10 16 cm -3 , 1.5×10 16 cm -3 , 1.8×10 16 cm -3 , 2×10 16 cm -3 , 2.3×10 16 cm -3 , 2.5×10 16 cm -3 , 2.8×10 16 cm -3 , 3×10 16 cm -3 , 3.2×10 16 cm -3 , 3.5×10 16 cm -3 , 3.8×10 16 cm -3 , 4×10 16 cm -3 4.2×10 16 cm -3 , 4.5×1016 cm -3 4.8×10 16 cm -3 or 5×10 16 cm -3 etc., wherein 0.52≤w≤1, for example, w can be 0.52, 0.55, 0.58, 0.6, 0.63, 0.65, 0.68, 0.7, 0.73, 0.75, 0.78, 0.8, 0.82, 0.84, 0.86, 0.88, 0.9, 0.92, 0.95, 0.98 or 1, etc., but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0047] In one embodiment, the substrate 1 includes an InP (001) substrate.

[0048] In some specific embodiments, the present invention further provides a method for manufacturing the InGaAs detector described in any of the above embodiments, the manufacturing method comprising:

[0049] In is grown on substrate 1 by molecular beam epitaxy. x Al 1-x As graded layer 2, In y Al 1-y As component overshoot layer 3 (x≤y), n-type In z Al 1-z As buffer layer 4 (x≤z≤y), i-type InGaAs absorption layer 5 and n-type InAlAs cap layer 6 .

[0050] Example 1

[0051] This embodiment provides an InGaAs detector, which is a planar high-In content InGaAs detector, and specifically includes sequentially stacked:

[0052] Substrate 1, InP (001) substrate;

[0053] In x Al 1-x As graded layer 2, i-type, composed of linearly graded components i-type In x Al 1-x As material, 0.52≤x≤0.83;

[0054] In y Al 1-y As composition overshoot layer 3, n-type, composed of linearly graded Si-doped In y Al 1-y As material, doping concentration is 3x10 16 cm -3And 0.83≤y≤0.88, the thickness is 55nm;

[0055] n-type In z Al 1-z The As buffer layer 4 is composed of an n-type InGaAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As material (i.e. z = 0.83), with a doping concentration of 8x10 17 cm -3 ;

[0056] The i-type InGaAs absorption layer 5 is composed of a high In content i-type In 0.83 Ga 0.17 As material (i.e. In a Ga 1-a As material, a = 0.83);

[0057] The n-type InAlAs cap layer 6 is composed of an n-type InAlAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As (i.e. In w Al 1-w As material, w = 0.83), with a doping concentration of 3x10 16 cm -3 .

[0058] Example 2

[0059] This embodiment provides an InGaAs detector, which is a planar high-In content InGaAs detector, and specifically includes sequentially stacked:

[0060] Substrate 1, InP (001) substrate;

[0061] In x Al 1-x As graded layer 2, i-type, composed of linearly graded components i-type In x Al 1-x As material, 0.52≤x≤0.83;

[0062] In y Al 1-y As component overshoot layer 3, i-type, i-type In y Al 1-y As material, 0.83≤y≤0.88, thickness 60nm;

[0063] n-type In z Al 1-z The As buffer layer 4 is composed of an n-type InGaAs layer lattice-matched with the i-type InGaAs absorption layer 5.0.83 Al 0.17 As material (i.e. z = 0.83), with a doping concentration of 1x10 17 cm -3 ;

[0064] The i-type InGaAs absorption layer 5 is composed of a high In content i-type In 0.83 Ga 0.17 As material (i.e. In a Ga 1-a As material, a = 0.83);

[0065] The n-type InAlAs cap layer 6 is composed of an n-type InAlAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As (i.e. In w Al 1-w As material, w = 0.83), with a doping concentration of 1x10 16 cm -3 .

[0066] Example 3

[0067] This embodiment provides an InGaAs detector, which is a planar high-In content InGaAs detector, and specifically includes sequentially stacked:

[0068] Substrate 1, InP (001) substrate;

[0069] In x Al 1-x As graded layer 2, n-type, composed of linearly graded n-type In x Al 1-x As material, doping concentration is 3x10 16 cm -3 , 0.52≤x≤0.83;

[0070] In y Al 1-y As composition overshoot layer 3, n-type, i-type In by linear gradient composition y Al 1-y As material, doping concentration is 3x10 16 cm -3+ And 0.83≤y≤0.88, the thickness is 65nm;

[0071] n-type In z Al 1-z The As buffer layer 4 is composed of an n-type InGaAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17As material (i.e. z = 0.83), with a doping concentration of 3x10 17 cm -3 ;

[0072] The i-type InGaAs absorption layer 5 is composed of a high In content i-type In 0.83 Ga 0.17 As material (i.e. In a Ga 1-a As material, a = 0.83);

[0073] The n-type InAlAs cap layer 6 is composed of an n-type InAlAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As (i.e. In w Al 1-w As material, w = 0.83), with a doping concentration of 2x10 16 cm -3 .

[0074] Example 4

[0075] This embodiment provides an InGaAs detector, which is a planar high-In content InGaAs detector, and specifically includes sequentially stacked:

[0076] Substrate 1, InP (001) substrate;

[0077] In x Al 1-x As graded layer 2, i-type, composed of linearly graded components i-type In x Al 1-x As material, 0.52≤x≤0.83;

[0078] In y Al 1-y As composition overshoot layer 3, n-type, composed of linearly graded Si-doped In y Al 1-y As material, doping concentration is 8x10 15 cm -3 And 0.83≤y≤0.88, the thickness is 70nm;

[0079] n-type In z Al 1-z The As buffer layer 4 is composed of an n-type InGaAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As material (i.e. z = 0.83), with a doping concentration of 5x10 17 cm -3 ;

[0080] The i-type InGaAs absorption layer 5 is composed of a high In content i-type In 0.83 Ga 0.17 As material (i.e. In a Ga 1-a As material, a = 0.83);

[0081] The n-type InAlAs cap layer 6 is composed of an n-type InAlAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As (i.e. In w Al 1-w As material, w = 0.83), with a doping concentration of 2.5x10 16 cm -3 .

[0082] Example 5

[0083] This embodiment provides an InGaAs detector, which is a planar high-In content InGaAs detector, and specifically includes sequentially stacked:

[0084] Substrate 1, InP (001) substrate;

[0085] In x Al 1-x As graded layer 2, i-type, composed of linearly graded components i-type In x Al 1-x As material, 0.52≤x≤0.83;

[0086] In y Al 1-y As composition overshoot layer 3, n-type, composed of linearly graded Si-doped In y Al 1-y As material, doping concentration is 6x10 16 cm -3 and 0.53≤y≤0.88, with a thickness of 75 nm;

[0087] n-type In z Al 1-z The As buffer layer 4 is composed of an n-type InGaAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As material (i.e. z = 0.83), with a doping concentration of 1x10 18 cm -3 ;

[0088] The i-type InGaAs absorption layer 5 is composed of a high In content i-type In 0.83 Ga 0.17 As material (i.e. Ina Ga 1-a As material, a = 0.83);

[0089] The n-type InAlAs cap layer 6 is composed of an n-type InAlAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As (i.e. In w Al 1-w As material, w = 0.83), with a doping concentration of 3.5x10 16 cm -3 .

[0090] Example 6

[0091] This embodiment provides an InGaAs detector, which is a planar high-In content InGaAs detector, and specifically includes sequentially stacked:

[0092] Substrate 1, InP (001) substrate;

[0093] In x Al 1-x As graded layer 2, i-type, composed of linearly graded components i-type In x Al 1-x As material, 0.52≤x≤0.83;

[0094] In y Al 1-y As composition overshoot layer 3, n-type, composed of linearly graded Si-doped In y Al 1-y As material, doping concentration is 1x10 17 cm -3 And 0.53≤y≤0.88, the thickness is 80nm;

[0095] n-type In z Al 1-z The As buffer layer 4 is composed of an n-type InGaAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As material (i.e. z = 0.83), with a doping concentration of 3x10 18 cm -3 ;

[0096] The i-type InGaAs absorption layer 5 is composed of a high In content i-type In 0.83 Ga 0.17 As material (i.e. In a Ga 1-a As material, a = 0.83);

[0097] The n-type InAlAs cap layer 6 is composed of an n-type InAlAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As (i.e. In w Al 1-w As material, w = 0.83), the doping concentration is 4x10 16 cm -3 .

[0098] Example 7

[0099] This embodiment provides an InGaAs detector, which is a planar high-In content InGaAs detector, and specifically includes sequentially stacked:

[0100] Substrate 1, InP (001) substrate;

[0101] In x Al 1-x As graded layer 2, i-type, composed of linearly graded components i-type In x Al 1-x As material, 0.52≤x≤0.83;

[0102] In y Al 1-y As composition overshoot layer 3, n-type, composed of linearly graded Si-doped In y Al 1-y As material, doping concentration is 2x10 18 cm -3 And 0.83≤y≤0.88, the thickness is 85nm;

[0103] n-type In z Al 1-z The As buffer layer 4 is composed of an n-type InGaAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As material (i.e. z = 0.83), with a doping concentration of 5x10 18 cm -3 ;

[0104] The i-type InGaAs absorption layer 5 is composed of a high In content i-type In 0.83 Ga 0.17 As material (i.e. In a Ga 1-a As material, a = 0.83);

[0105] The n-type InAlAs cap layer 6 is composed of an n-type InAlAs layer lattice-matched with the i-type InGaAs absorption layer 5. 0.83 Al 0.17 As (i.e. Inw Al 1-w As material, w = 0.83), the doping concentration is 5x10 16 cm -3 .

[0106] Example 8

[0107] This embodiment provides an InGaAs detector, which x Al 1-x As graded layer 2, composed of linear gradient component i-type In x Al 1-x As material composition is adjusted to i-type In with a fixed composition 0.83 Al 0.17 As (i.e. In x Al 1-x As material, x=0.83), except for the above, other conditions are exactly the same as those in Example 1.

[0108] Comparative Example 1

[0109] This comparative example provides an InGaAs detector which does not contain In y Al 1-y As component overshoots layer 3, directly in In x Al 1-x n-type In z Al 1-z As buffer layer 4, except for the above, other conditions are exactly the same as those in Example 1.

[0110] Comparative Example 2

[0111] This comparative example provides an InGaAs detector which does not contain In y Al 1-y As component overshoots layer 3, directly in In x Al 1-x n-type In z Al 1-z As buffer layer 4, except for the above, other conditions are exactly the same as those in Example 2.

[0112] Comparative Example 3

[0113] This comparative example provides an InGaAs detector which does not contain In y Al 1-y As component overshoots layer 3, directly in In x Al 1-x n-type In z Al 1-zAs buffer layer 4, except for the above, other conditions are exactly the same as those in Example 3.

[0114] Comparative Example 4

[0115] This comparative example provides an InGaAs detector which does not contain InxAl 1-x As graded layer 2, directly arranged on substrate 1 to form InyAl 1-y As component overshoot layer 3, except for the above, other conditions are exactly the same as those in Example 1.

[0116] Comparative Example 5

[0117] This comparative example provides an InGaAs detector which does not contain InxAl 1-x As graded layer 2 and InyAl 1-y As component overshoot layer 3 is directly set on substrate 1 to form n-type InzAl 1- zAs buffer layer 4, except for the above, other conditions are exactly the same as those in Example 1.

[0118] The InGaAs detectors obtained in the examples and comparative examples were subjected to a photoluminescence test, which was performed using a 532 nm green laser with an external optical path and a Nicolet iS50 Fourier transform infrared spectrometer.

[0119] Figure 2 Table 1 is the photoluminescence test results of the InGaAs detectors obtained from Examples 1 to 7. Table 2 is the Max values ​​of the results obtained from Examples 1 to 7. Figure 2 It can be seen from the combination of Table 1 that the order of photoluminescence intensity comparison is: Example 7 < Example 2 < Example 3 < Example 4 < Example 6 < Example 5 < Example 1.

[0120] Table 1

[0121]

[0122] In addition, the photoluminescence performance of the InGaAs detectors obtained in Example 8 and Comparative Examples 1 to 5 is poor. Compared with Examples 1 to 3, the intensity levels of Comparative Examples 1 to 3 are all less than 0.1. Compared with Example 1, Comparative Examples 4 and 5 are the worst, and the luminescence intensity is weakened by two orders of magnitude. 1-y As component overshoot layer, realize the improvement of photoluminescence performance of InGaAs detector material, by y Al 1-yThe As component overshoot layer is doped to form an n-type component overshoot layer, thereby ensuring further improvement of the photoluminescence performance of the InGaAs detector material.

[0123] The preferred embodiments of the present invention are described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, a variety of simple modifications can be made to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.

[0124] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

[0125] In addition, various embodiments of the present invention may be arbitrarily combined, and as long as they do not violate the concept of the present invention, they should also be regarded as the contents disclosed by the present invention.

Claims

1. An InGaAs detector, characterized in that: Including sequentially stacked substrates, In x Al 1-x As graded layer, In y Al 1-y As component overshoot layer, n-type In z Al 1-z As buffer layer, i-type InGaAs absorption layer and n-type InAlAs cap layer, wherein x≤z≤y.

2. The InGaAs detector according to claim 1, characterized in that: The i-type InGaAs absorption layer includes a fixed composition of In a Ga 1-a As material, where 0.52≤a≤1.

3. The InGaAs detector according to claim 2, characterized in that: The i-type InGaAs absorption layer has a high In component. a Ga 1-a As material, where 0.8≤a≤1.

4. The InGaAs detector according to any one of claims 1 to 3, characterized in that: The n-type In z Al 1-z The As buffer layer includes a fixed composition of In that is lattice-matched to the i-type InGaAs absorber layer. z Al 1-z As material, doping concentration is 1×10 17 cm -3 ~5×10 18 cm -3 , where 0.52≤z≤1.

5. The InGaAs detector according to any one of claims 1 to 3, characterized in that: In y Al 1-y As component overshoot layer is n-type In y Al 1-y As component overshoot layer, thickness ≥50nm.

6. The InGaAs detector according to any one of claims 1 to 3, characterized in that: In y Al 1-y As composition overshoot layer includes linear graded composition Si-doped In y Al 1-y As material, doping concentration is 5×10 15 cm -3 ~3×10 18 cm -3 , where z≤y≤z+0.

05.

7. The InGaAs detector according to any one of claims 1 to 3, characterized in that: In x Al 1-x As graded layer is i-type In x Al 1-x As transition layer.

8. The InGaAs detector according to any one of claims 1 to 3, characterized in that: In x Al 1-x As graded layer includes linear gradient component In x Al 1-x As material, where 0.52≤x≤z.

9. The InGaAs detector according to any one of claims 1 to 3, characterized in that: The n-type InAlAs cap layer includes a fixed composition of In that is lattice-matched to the i-type InGaAs absorber layer. w Al 1-w As material, doping concentration is 1×10 16 cm -3 ~5×10 16 cm -3 , where 0.52≤w≤1.

10. The InGaAs detector according to any one of claims 1 to 3, characterized in that: The substrate includes an InP (001) substrate.

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