Method for manufacturing semiconductor device using epitaxial process and manufacturing apparatus for same

Abstract

Disclosed are a method for manufacturing a semiconductor device in which a flat substrate is heated by a vertical cavity surface emitting laser (VCSEL) device, a plurality of layers of thin films formed by alternately depositing a first thin film and a second thin film are formed on the upper portion of the flat substrate by an epitaxial process, and the first thin film and the second thin film are deposited on the upper portion of the flat substrate. The semiconductor device manufacturing method includes: a first thin film vapor deposition step of supplying a first source gas to an upper portion of a flat substrate at a first vapor deposition temperature to vapor-deposit a first thin film; an evaporation temperature reduction step of reducing the temperature of the flat substrate from the first evaporation temperature to a second evaporation temperature; a second thin film vapor deposition step of supplying a second source gas at a second vapor deposition temperature to vapor-deposit a second thin film on the upper portion of the first thin film; and an evaporation temperature increasing step of increasing the temperature of the flat substrate from the second evaporation temperature to the first evaporation temperature.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device using an epitaxial process and a manufacturing apparatus therefor. Background Art

[0002] Semiconductor devices such as gate-all-around (GAA) metal-oxide semiconductor field effect transistor (MOS) devices and 3D DRAM (three-dimensional dynamic random access memory) can be formed by forming [Si / SiGe x ]n and other multi-layer thin films. The plurality of semiconductor devices can be manufactured by evaporation of Si and SiGe x The epitaxial process of the multilayer thin film is formed by alternating and repeating. The epitaxial process alternately repeats the Si thin film evaporation process of evaporating the Si thin film by supplying SiH4 gas and the SiGe evaporation process of evaporating the Si thin film by supplying SiH4 / GeH4 gas. x Thin film SiGe x Thin film evaporation process: The evaporation rate of the first thin film and the evaporation rate of the second thin film can increase with the increase of the evaporation temperature.

[0003] Furthermore, the evaporation rate of the first thin film and the evaporation rate of the second thin film may differ by several dozen times at the same evaporation temperature. x When the thin film deposition process is carried out at the same deposition temperature, the deposition rate of Si thin film and SiGe x The evaporation speed of the thin film varies by dozens of times. Therefore, when the evaporation temperature is the same, the evaporation time of 1 (Si) thin film should be longer than that of 2 (SiGe x ) The evaporation time of the thin film is dozens of times longer. For example, when the evaporation temperature is 600°C, the evaporation rate of the first thin film is 2nm / min, and the evaporation rate of the second thin film is 50nm / min, and the evaporation rate ratio is 25 times. When the evaporation temperature is 600°C and the thickness of the film is 50nm, the evaporation time of the first thin film is 25 minutes, and the evaporation time of the second thin film is 1 minute. Therefore, as the overall evaporation time required for evaporating the first and second thin films increases, the production efficiency may decrease. Summary of the invention

[0004] Technical issues

[0005] An object of the present invention is to provide a method for manufacturing a semiconductor device using an epitaxial process and a manufacturing apparatus therefor, which can increase the vapor deposition rate and vapor deposition efficiency of a multilayer thin film constituting a semiconductor device.

[0006] Technical Solution

[0007] In the semiconductor device manufacturing method using the epitaxial process of the present invention, a flat substrate is heated by a vertical cavity surface emitting laser (VCSEL) device, and a multilayer thin film formed by alternately evaporating a first thin film and a second thin film is formed on the upper part of the flat substrate by the epitaxial process. The semiconductor device manufacturing method is characterized in that it includes: a first thin film evaporation step, supplying a first source gas to the upper part of the flat substrate at a first evaporation temperature to evaporate the first thin film; an evaporation temperature reduction step, causing the temperature of the flat substrate to drop from the first evaporation temperature to the second evaporation temperature; a second thin film evaporation step, supplying a second source gas at the second evaporation temperature to evaporate a second thin film on the upper part of the first thin film; and an evaporation temperature increase step, causing the temperature of the flat substrate to increase from the second evaporation temperature to the first evaporation temperature. In this case, the first thin film can be a Si thin film, and the second thin film can be a SiGe thin film. x Thin film (0.1<x<0.4).

[0008] Furthermore, the first evaporation temperature may be 600-800°C, the second evaporation temperature may be 500-750°C, in the evaporation temperature decreasing step, the evaporation temperature decreasing time may be 1-10 seconds, and in the evaporation temperature increasing step, the evaporation temperature increasing time may be 1-5 seconds.

[0009] Furthermore, the first evaporation temperature and the second evaporation temperature may be set so that a first evaporation rate of the first thin film is 0.1 to 2 times of a second evaporation rate of the second thin film.

[0010] Furthermore, in the first thin film evaporation step and the second thin film evaporation step, the first evaporation temperature and the second evaporation temperature may be controlled to have a uniformity of 0.2% or less, respectively.

[0011] Furthermore, the outer side of the flat substrate may be supported so that the lower surface thereof is exposed, and the laser beam irradiated from the VCSEL device is directly irradiated toward the lower surface of the flat substrate, and the flat substrate is rotated when the laser beam is irradiated.

[0012] Furthermore, the semiconductor device manufacturing method may use a substrate heating portion including the vertical cavity surface emitting laser device, the vertical cavity surface emitting laser device irradiates a laser beam for heating the flat substrate, the substrate heating portion has a vertical cavity surface emitting laser module, the vertical cavity surface emitting laser module is composed of at least two vertical cavity surface emitting laser sub-modules having a device area and a terminal area, at least two vertical cavity surface emitting laser devices are arranged in the device area, and terminals for supplying power to the vertical cavity surface emitting laser devices are arranged in the terminal area, the vertical cavity surface emitting laser module is arranged in an area larger than the area of ​​the flat substrate, and the vertical cavity surface emitting laser module is separated from the flat substrate by a distance of 100 to 300 mm.

[0013] Also, in the VCSEL module, the VCSEL sub-modules may be arranged such that terminal regions of the VCSEL sub-modules are connected to each other along one direction to form a straight line shape.

[0014] Furthermore, the VCSEL module can irradiate a laser beam so that the temperature of the flat substrate has a temperature uniformity of less than 0.2%, in the VCSEL device, the maximum spacing distance of the micro-emitter arrangement is 0.1 mm, the size of the electrode area is less than 0.1 mm, in the VCSEL sub-module, the spacing distance of the VCSEL device is less than 1 mm, and the VCSEL module is configured so that the spacing distance of the VCSEL sub-module is less than 10 mm.

[0015] Furthermore, the VCSEL submodules can receive power independently, and the luminous intensity of the VCSEL submodules can be individually controlled by using a pyrometer for detecting the temperature of the flat substrate at the bottom of the flat substrate, so that the flat substrate is heated to a set evaporation temperature.

[0016] Furthermore, the flat substrate can be rotated by magnetic suspension. When the flat substrate is rotated, it is rotated without being disturbed by the VCSEL module.

[0017] The semiconductor device manufacturing device using the epitaxial process of the present invention is a semiconductor device manufacturing device for performing the semiconductor device manufacturing method. The semiconductor device manufacturing device is characterized in that a substrate heating portion including a vertical cavity surface emitting laser device is used, and the vertical cavity surface emitting laser device irradiates a laser beam for heating a flat substrate. The substrate heating portion has a vertical cavity surface emitting laser module, and the vertical cavity surface emitting laser module is composed of at least two vertical cavity surface emitting laser sub-modules having a device area and a terminal area. At least two vertical cavity surface emitting laser devices are arranged in the device area, and terminals for supplying power to the vertical cavity surface emitting laser devices are arranged in the terminal area. The vertical cavity surface emitting laser module is arranged in an area larger than the area of ​​the flat substrate, and the vertical cavity surface emitting laser module is separated from the flat substrate by a distance of 100 to 300 mm.

[0018] Also, in the VCSEL module, the VCSEL sub-modules may be arranged such that terminal regions of the VCSEL sub-modules are connected to each other along one direction to form a straight line shape.

[0019] Furthermore, the VCSEL module can irradiate a laser beam so that the temperature of the flat substrate has a temperature uniformity of less than 0.2%, in the VCSEL device, the maximum spacing distance of the micro-emitter arrangement is 0.1 mm, the size of the electrode region is less than 0.1 mm, in the VCSEL sub-module, the spacing distance of the VCSEL device is less than 1 mm, and the VCSEL module is configured so that the spacing distance of the VCSEL sub-module is less than 10 mm.

[0020] Furthermore, the VCSEL submodules receive power independently, and the luminous intensity of the VCSEL submodules is individually controlled by using a pyrometer for detecting the temperature of the flat substrate at the upper or lower part of the flat substrate, so that the flat substrate is heated to a set evaporation temperature.

[0021] Furthermore, the flat substrate can be rotated by magnetic suspension. When the flat substrate is rotated, it is rotated without being disturbed by the VCSEL module.

[0022] Effects of the Invention

[0023] The semiconductor device manufacturing method using the epitaxial process and the manufacturing device using the same of the present invention can increase the evaporation speed and evaporation efficiency of the multilayer thin film in the process of manufacturing the multilayer thin film constituting the semiconductor device using the epitaxial process. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 The present invention is a process diagram of a method for manufacturing a semiconductor device using an epitaxial process according to an embodiment of the present invention.

[0025] Figure 2 This is a graph showing the evaporation rate depending on the temperature of the first thin film and the second thin film in the epitaxial process.

[0026] Figure 3 For use Figure 1 A vertical cross-sectional view of a semiconductor device manufacturing apparatus according to a semiconductor manufacturing method.

[0027] Figure 4 for Figure 3 A top view of a substrate heating portion.

[0028] Figure 5 for Figure 3 A partial three-dimensional view of a substrate heating portion.

[0029] Figure 6 Figure 2 is a graph of temperature uniformity based on the separation distance between the wafer and the VCSEL module.

[0030] Figure 7 The figure is a graph showing the temperature of the wafer measured when the power applied to the VCSEL module is increased and the wafer is heated.

[0031] Figure 8 is a graph showing the temperature variation characteristics of a wafer when the wafer is heated and cooled by a VCSEL module. DETAILED DESCRIPTION

[0032] Hereinafter, the semiconductor device manufacturing method using the epitaxial process and the manufacturing apparatus therefor of the present invention will be described in more detail with reference to the embodiments and the accompanying drawings.

[0033] First, a method for manufacturing a semiconductor device using an epitaxial process according to an embodiment of the present invention is described.

[0034] Figure 1 The present invention is a process diagram of a method for manufacturing a semiconductor device using an epitaxial process according to an embodiment of the present invention. Figure 2 This is a graph showing the evaporation rate depending on the temperature of the first thin film and the second thin film in the epitaxial process.

[0035] Reference Figure 1 A semiconductor device manufacturing method using an epitaxial process according to an embodiment of the present invention may include a first thin film evaporation step S10, an evaporation temperature decreasing step S20, a second thin film evaporation step S30, and an evaporation temperature increasing step S40.

[0036] The semiconductor device manufacturing method can be used for a semiconductor device manufacturing method including a multilayer thin film in which a first thin film and a second thin film are alternately stacked. Wherein, when evaporated by an epitaxial process, the first thin film and the second thin film can be thin films with different evaporation rates at the same evaporation temperature. At the same evaporation temperature, the evaporation rate of the first thin film can be relatively low, and the evaporation rate of the second thin film can be relatively high. Moreover, as the evaporation temperature decreases, the evaporation rates of the first thin film and the second thin film can decrease. The degree of decrease in the evaporation rate of the first thin film may be greater than the degree of decrease in the evaporation rate of the second thin film. On the other hand, in the semiconductor device manufacturing method, when the evaporation rates of the first thin film and the second thin film are opposite, the order of the evaporation temperature decreasing step S20 and the evaporation temperature increasing step S40 can be performed in reverse.

[0037] The semiconductor device manufacturing method can be used to manufacture [Si / SiGe x ]n (n is 1 or more) multilayer film. In this case, the first film may be a Si film. And, the second film may be a SiGe x Thin film. Wherein, the x may be 0.1<x<0.40. And, preferably, the x may be 0.25<x<0.38. In this case, the SiGe x It can be a thin film formed in the process of manufacturing a full-surround gate transistor metal-oxide semiconductor field effect transistor device. That is, the semiconductor device manufacturing method can be a method for manufacturing a full-surround gate transistor metal-oxide semiconductor field effect transistor device. And, preferably, the x can be 0.15<x<0.25. In this case, the SiGe x It can be a thin film formed in the process of manufacturing 3D DRAM. That is, the semiconductor device manufacturing method can be a method for manufacturing 3D DRAM. In addition, the first thin film can be formed by supplying a first source gas. In addition, the second thin film can be formed by supplying a second source gas. In this case, the second source gas can be a mixed gas of the first source gas and GeH4.

[0038] The semiconductor device may be a metal-oxide semiconductor field effect transistor device and a 3D DRAM and other semiconductor devices. x ]n, the semiconductor device may also include a plurality of thin films or a conductor pattern for current flow, depending on the type of device. The semiconductor device manufacturing method may also include a plurality of steps for forming additional structures of the semiconductor device.

[0039] Furthermore, in addition to the epitaxial process, the semiconductor device manufacturing method can also be applied to a variety of processes for forming at least two thin films with different evaporation rates at one evaporation temperature. Furthermore, the semiconductor device manufacturing method can also be applied to the process of forming at least two thin films with the same or different evaporation rates at different temperatures or the case of heat treating the evaporated thin films. For example, the semiconductor device manufacturing method can also be applied to processes such as semiconductor dopant activation rapid thermal processing, silicide rapid thermal processing, chemical vapor deposition process (CVD) or atomic layer deposition process (ALD).

[0040] Furthermore, the semiconductor device manufacturing method can increase the evaporation speed of the thin film by changing the evaporation temperature of each thin film. Furthermore, the semiconductor device manufacturing method can increase the [Si / SiGe x ]nThe evaporation speed of the multilayer film. As mentioned above, in the existing epitaxial equipment, the evaporation temperature drop time and the evaporation temperature rise time may take about 90 to 150 seconds. In comparison, preferably, in the semiconductor device manufacturing method, the evaporation temperature drop time and the evaporation temperature rise time may be 1 to 5 seconds and 1 to 2 seconds respectively.

[0041] In the semiconductor device manufacturing method, the evaporation temperature drop time and the evaporation temperature rise time are relatively short, and therefore, they can be performed while the first source gas is continuously supplied. That is, the evaporation temperature drop step S20 and the evaporation temperature rise step S40 can be performed while the first source gas is supplied. Therefore, the evaporation temperature drop step S20 and the evaporation temperature rise step S40 can be performed while the first source gas is supplied, so that the atmosphere for evaporation can be stably maintained. Usually, the evaporation temperature drop step S20 and the evaporation temperature rise step S40 are performed without supplying the first source gas.

[0042] The semiconductor device manufacturing method can use a vertical cavity surface emitting laser device as a heating unit for heating a flat substrate or a deposited thin film. The heating unit can be formed by arranging the vertical cavity surface emitting laser devices in an area corresponding to the area of ​​the flat substrate or a larger area. The heating unit can heat the flat substrate by irradiating the lower surface of the flat substrate with a laser beam oscillating from the vertical cavity surface emitting laser device. The semiconductor device manufacturing method does not use a separate heater (susceptor), but is carried out in a state where the outer side of the flat substrate is supported to expose its lower surface. In addition, the semiconductor device manufacturing method can be carried out while rotating the flat substrate. Therefore, the semiconductor device manufacturing method can control the temperature deviation of the first evaporation temperature and the second evaporation temperature of the epitaxial process to be less than 0.2%.

[0043] The flat substrate may be a wafer or a glass substrate. Also, the flat substrate may be a flexible substrate such as a resin film. Also, the flat substrate may include a variety of devices or conductor patterns formed on the surface or inside.

[0044] The first thin film evaporation step S10 is a step of supplying a first source gas at a first evaporation temperature to evaporate a first thin film on the upper part of a flat substrate. The first thin film evaporation step S10 is a step of evaporating a first thin film through an epitaxial process. The first thin film can be evaporated on the upper part of a flat substrate for the first time, and evaporated on the upper part of a second thin film from the second time. In addition, the first thin film can be evaporated on the upper part of a flat substrate or other thin films evaporated on the upper part of the second thin film. Among them, the first thin film can be a Si thin film. The first source gas can be a gas selected from Si2H2Cl2, SiH4, Si2H6 and Si3H8, or a mixed gas formed by mixing at least two gases.

[0045] The first thin film evaporation step S10 can control the first evaporation temperature based on the surface temperature of the flat substrate. And the first thin film evaporation step S10 can control the first evaporation temperature within a uniformity range of less than 0.2%. To this end, in the first thin film evaporation step S10, as a substrate heating unit, a vertical cavity surface emitting laser device is used as a light source of a laser beam to heat the flat substrate, and the first thin film evaporation step S10 can be performed by rotating the flat substrate using a substrate rotating unit. And in the first thin film evaporation step S10, instead of placing the flat substrate on a separate heater (susceptor), the heating unit directly irradiates the lower surface of the flat substrate with a laser beam of a vertical cavity surface emitting laser device for heating. The first evaporation temperature can be 600 to 800°C. Preferably, and the first evaporation temperature can be 650 to 750°C. In this case, the Si can be a thin film formed in the process of manufacturing a fully surrounding gate transistor metal-oxide semiconductor field effect transistor device. That is, the semiconductor device manufacturing method can be a method for manufacturing a fully surrounding gate transistor metal-oxide semiconductor field effect transistor device. And, preferably, the first evaporation temperature may be 700-800° C. In this case, the Si may be a thin film formed in the process of manufacturing 3D DRAM. That is, the semiconductor device manufacturing method may be a method of manufacturing 3D DRAM. The first evaporation temperature may be the surface temperature of the flat substrate, the second thin film or the evaporated first thin film.

[0046] The first thin film evaporation step S10 can evaporate the first thin film at a first evaporation rate. The first evaporation rate can be 1 to 150 nm / min. And, preferably, the first evaporation rate can be 10 to 100 nm / min. In this case, the first evaporation rate can be the speed of evaporating a thin film in the process of manufacturing a fully surrounded gate transistor metal-oxide semiconductor field effect transistor device. And, preferably, the first evaporation rate can be 35 to 150 nm / min. In this case, the first evaporation rate can be the speed of evaporating a thin film in the process of manufacturing a 3D DRAM. The first thin film evaporation step S10 can be performed under reduced pressure conditions in which the process pressure of the process chamber is 0.1 to 500 Torr.

[0047] The evaporation temperature lowering step S20 is a step of lowering the temperature of the flat substrate from the first evaporation temperature to the second evaporation temperature. The second evaporation temperature is lower than the first evaporation temperature. The second evaporation temperature is the temperature for performing the epitaxial process of evaporating the second thin film. The second evaporation temperature may be 500 to 750°C. And, preferably, the second evaporation temperature may be 500 to 650°C. In this case, the second evaporation temperature may be the temperature of the SiGe film formed as the second thin film. x The temperature of the film. x The thin film may be a method for manufacturing a fully surrounding gate transistor metal-oxide semiconductor field effect transistor device. And, preferably, the second evaporation temperature may be 630-730° C. In this case, the SiGe x The thin film may be a thin film formed in the process of manufacturing 3D DRAM. That is, the semiconductor device manufacturing method may be a method of manufacturing 3D DRAM. The second evaporation temperature may be the surface temperature of the flat substrate, the first thin film or the second thin film.

[0048] The evaporation temperature reduction step S20 can be performed for a specified evaporation temperature reduction time. That is, the evaporation temperature reduction time is the time required to reduce from the first evaporation temperature to the second evaporation temperature. The evaporation temperature reduction time can be 1 to 10 seconds. And, preferably, the evaporation temperature reduction time can be 1 to 5 seconds. In the evaporation temperature reduction step S20, the evaporation temperature can be reduced to a shorter evaporation temperature reduction time than the time required for the temperature change in the existing epitaxial device. It is known that the existing epitaxial equipment takes approximately 90 to 150 seconds to cool down 50 to 250°C. The evaporation temperature reduction step S20 can reduce the evaporation temperature in a relatively short time and prevent the heating temperature of the flat substrate or multiple thin films from being lower than (underheating) the evaporation temperature.

[0049] The evaporation temperature lowering step S20 can be performed in a state where the first source gas is supplied. Compared with the existing method, the evaporation temperature lowering step S20 is performed in a relatively short time, so even if the first source gas is supplied, its consumption is not much. In addition, the evaporation temperature lowering step S20 is performed in a state where the first source gas is supplied, so the atmosphere for evaporation can be stably maintained.

[0050] The second thin film evaporation step S30 is a step of supplying a second source gas at a second evaporation temperature to evaporate a second thin film on the upper part of the first thin film. The second thin film evaporation step S30 is a step of evaporating a second thin film through an epitaxial process. The second thin film evaporation step S30 can control the second evaporation temperature based on the surface temperature of the flat substrate. The second thin film evaporation step S30 can control the second evaporation temperature within a uniformity range of less than 0.2%. To this end, in the second thin film evaporation step S30, as a heating unit, a vertical cavity surface emitting laser device is used as a light source of the laser beam, and the second thin film evaporation step S30 can be performed by rotating the flat substrate. In addition, in the second thin film evaporation step S30, a separate heater (susceptor) is not used, and the heating unit can directly irradiate the laser of the vertical cavity surface emitting laser device to the lower surface of the flat substrate to heat it. As described above, the second evaporation temperature can be 500-750°C. And, preferably, the second evaporation temperature can be 500-650°C. And, preferably, the second evaporation temperature may be 630-730°C.

[0051] The second film may be SiGe x Film. As mentioned above, x may be 0.1<x<0.40. Also, preferably, x may be 0.25<x<0.38. Also, preferably, x may be 0.15<x<0.25.

[0052] The second source gas may be a mixed gas of the first source gas and GeH4. The Ge source gas may be GeH4. In the second thin film evaporation step S30, the second thin film may be evaporated at a second evaporation rate. The second evaporation rate may be 10 to 120 nm / min. The second thin film evaporation step S30 may be performed under a reduced pressure condition in which the process pressure of the process chamber is 0.1 to 500 Torr.

[0053] The evaporation temperature rising step S40 is a step of raising the temperature of the flat substrate from the second evaporation temperature to the first evaporation temperature. The evaporation temperature rising step S40 can be performed for a specified evaporation temperature rising time. That is, the evaporation temperature rising time is the time required to rise from the second evaporation temperature to the first evaporation temperature. The evaporation temperature rising time can be 1 to 5 seconds. And, the evaporation temperature rising time can be 1 to 2 seconds. The evaporation temperature rising time can be a time shorter than the evaporation temperature falling time. For example, the evaporation temperature rising time can be 1.2 seconds, and the evaporation temperature falling time can be 3.0 seconds. It is known that the existing epitaxial device takes about 90 to 150 seconds to rise 50 to 250°C. The evaporation temperature rising step S40 can raise the evaporation temperature in a relatively short time and prevent the heating temperature of the flat substrate or multiple thin films from being higher than (overheating) the evaporation temperature.

[0054] The evaporation temperature increasing step S40 can be performed in a state where the first source gas is supplied. Compared with the existing method, the evaporation temperature increasing step S40 is performed in a very short time, so even if the first source gas is supplied, its consumption is not much. In addition, the evaporation temperature increasing step S40 is performed in a state where the first source gas is supplied, so the atmosphere for evaporation can be stably maintained.

[0055] In the semiconductor device manufacturing method, a first evaporation temperature for evaporating the first thin film and a second evaporation temperature for evaporating the second thin film may be set differently. Figure 2 As shown, the first film and the second film may have different evaporation speeds at the same evaporation temperature. Therefore, in order to increase the first evaporation speed of evaporating the first film, the semiconductor device manufacturing method may set the first evaporation temperature to be relatively higher than the second evaporation temperature. The semiconductor device manufacturing method may set the first evaporation speed to make the first evaporation speed reach 0.1 to 2 times the second evaporation speed.

[0056] Next, a semiconductor device manufacturing apparatus used in a semiconductor device manufacturing method according to an embodiment of the present invention will be described.

[0057] Figure 3 For use Figure 1 A vertical cross-sectional view of a semiconductor device manufacturing apparatus according to a semiconductor manufacturing method. Figure 4 for Figure 3 A top view of a substrate heating portion. Figure 5 for Figure 3 A partial three-dimensional view of a substrate heating portion.

[0058] Reference Figures 3 to 5The semiconductor device manufacturing apparatus 10 may include a process chamber 100 , a substrate heating unit 200 , a cooling gas injection unit 300 , and a gas rotating unit 400 .

[0059] The semiconductor device manufacturing apparatus 10 may use a vertical cavity surface emitting laser device as a substrate heating unit for heating a flat substrate a. The vertical cavity surface emitting laser device may irradiate a laser beam of a wavelength band below 1 μm to heat a wafer as a flat substrate a in an epitaxial process. Furthermore, the vertical cavity surface emitting laser device may irradiate a laser beam of a single wavelength below 1 μm. For example, preferably, the vertical cavity surface emitting laser device may be a device that irradiates a laser beam of a single wavelength of approximately 940 nm.

[0060] The vertical cavity surface emitting laser device can be configured to irradiate the entire area of ​​the flat substrate a with a laser beam. The vertical cavity surface emitting laser device can utilize the radiation characteristics of the laser beam released from the micro-emitter and the characteristics of overlapping with the laser beam of the adjacent micro-emitter to uniformly heat the flat substrate a. The radiation angle of the laser beam released from the micro-emitter can be 20 to 30 degrees, and the energy of the laser beam can be transmitted to only a part of the wafer at a distance of more than 100mm between the longer wafer and the vertical cavity surface emitting laser device. Therefore, the vertical cavity surface emitting laser device is divided into vertical cavity surface emitting laser sub-modules, each of which constitutes an independent energy line for controlling individual energy, thereby realizing a zone control method for controlling the energy of the laser beam transmitted to the wafer by region. The semiconductor device manufacturing device 10 can irradiate the flat substrate a with a laser beam irradiated from the substrate heating module to heat it.

[0061] On the contrary, the wafer used as the flat substrate a can absorb a laser beam with a wavelength of less than 1 μm under a temperature condition of more than 400°C. Therefore, as the substrate heating unit, a light emitting diode (LED) light source with a wavelength band of R (0.8 μm) G (0.6 μm) B (0.4 μm) can be considered. However, as a surface emitting light source, the light emitting diode light source has a light emitting characteristic of radiating in all directions in a hemispherical shape. Due to the characteristics of hemispherical radiation, in order to heat the wafer, the separation distance between the wafer and the light emitting diode device should be extremely short within 50 mm. In the high temperature region of 400 to 1000°C, which is the evaporation temperature of the epitaxial process, when the separation distance is close, thermal degradation of the light emitting diode device cannot be avoided. Therefore, the light emitting diode light source can only be applied when the heating temperature of the wafer is below 400°C.

[0062] Furthermore, due to the characteristics of hemispherical radiation, the LED light source needs to participate in a wider area or the entire LED array to heat a position of the wafer. In order to precisely heat the wafer, the range of the LED array participating in the local area is limited, so that the regional control method of individually adjusting the output of the LED array becomes difficult. The LEDs are the LEDs participating in the local area. The wafer heating method using the LED light source can be applied to a method of changing the number density of the LED array according to the position to achieve uniform light heating, but it is not suitable for accurately controlling the temperature of the epitaxial process.

[0063] Furthermore, in the semiconductor device manufacturing process, halogen lamps are used in the activation of dopants in thin films evaporated from wafers or in the metal heating process (Rapid Thermal Processing) for forming silicides. The halogen lamp can directly irradiate a laser beam to the upper, lower, or upper and lower parts of the wafer to quickly heat and cool the wafer. However, the light irradiated from the halogen lamp has a peak in the wavelength spectrum near 1μm and has a wider distribution in the 0.5-3μm band. Therefore, infrared wavelengths longer than the absorption wavelength of the silicon wafer (<1μm) cannot participate in the optical heating of the wafer, and therefore, the heating efficiency of the halogen lamp will be reduced.

[0064] The light with a wavelength of 0.5 to 3 μm released from the halogen lamp is absorbed by the wafer, so that in order to participate in light heating, the process temperature of the wafer must reach at least 600°C. At a lower temperature of 600 to 700°C where the process temperature of the wafer is low, the light absorption rate is low, so it is difficult to achieve rapid heating. The light absorption rate changes sensitively according to the dopant concentration and temperature of the wafer. When the wafer is heated directly without a heater, the halogen lamp uses the following method to slowly preheat the wafer to around 700°C, and after a stabilization process, it is rapidly heated at a high temperature of more than 1000°C. It is difficult for the halogen lamp to rapidly heat the wafer in an epitaxial process of 600 to 700°C, and it is difficult to accurately change the temperature. Therefore, the halogen lamp is not suitable for use as a heating unit in an epitaxial process below 600°C. In particular, in order to improve the SiGe x This is especially true for the Ge concentration x of the thin film at a vapor deposition temperature of 600°C or lower.

[0065] The semiconductor device manufacturing apparatus 10 can be used to implement Figure 1 For example, the semiconductor device manufacturing apparatus 10 can be used to form [Si / SiGe x]n multilayer thin film. The semiconductor device manufacturing apparatus 10 can perform an epitaxial process of alternately evaporating a first thin film and a second thin film. The semiconductor device manufacturing apparatus 10 can set a first evaporation temperature and a second evaporation temperature for evaporating a second thin film differently. In order to increase the first evaporation speed of evaporating the first thin film, the semiconductor device manufacturing apparatus 10 can set the first evaporation temperature to be relatively higher than the second evaporation temperature. The semiconductor device manufacturing apparatus 10 can set the first evaporation temperature and the second evaporation temperature so that the first evaporation speed reaches 0.1 to 2 times the second evaporation speed.

[0066] The semiconductor device manufacturing apparatus 10 does not use a heater, but can directly support the outer lower surface of the flat substrate a. The semiconductor device manufacturing apparatus 10 directly supports the flat substrate a, so the flat substrate a can be quickly heated or cooled within the evaporation temperature range of 400 to 1000°C in the epitaxial process. For example, the semiconductor device manufacturing apparatus 10 can shorten the evaporation temperature drop time required to drop the evaporation temperature from the first evaporation temperature to the second evaporation temperature to 1 to 10 seconds. In addition, the semiconductor device manufacturing apparatus 10 can shorten the evaporation temperature rise time required to increase the evaporation temperature from the second evaporation temperature to the first evaporation temperature to 1 to 5 seconds. In addition, the semiconductor device manufacturing apparatus 10 directly heats the flat substrate a, so when the flat substrate is bent during the epitaxial process, the changes in the evaporation temperature and the evaporation speed can also be reduced.

[0067] The bending phenomenon (or bending phenomenon) refers to the linear deformation of the silicon wafer into a concave or convex shape during the process of evaporating [Si / SiGe]n thin film on the silicon wafer. The SiGe film and the silicon wafer have a difference in the lattice distance of the crystal arrangement. Therefore, in the epitaxial growth in which the lattices of Si and SiGe are maintained to match and grow, the lattice difference (lattice mismatch) between Si and SiGe causes the lattice to deform, and the wafer may bend into a concave or convex shape. The bending phenomenon is a phenomenon that inevitably occurs in the heteroepitaxial growth in which thin films of different substances grow into single crystals. SiGe x The higher the x composition, the smaller the number of multilayers (i.e., [Si / SiGe x ]n's n) can be more.

[0068] When the flat substrate a is supported by the heater and the epitaxial process is performed, as the flat substrate a is partially bent into a concave shape or a convex shape, the contact degree with the heater may be reduced. The heat transfer between the flat substrate a and the heater is different in each part, so the uniformity of the evaporation temperature may be reduced. The reduction in the uniformity of the evaporation temperature may cause uneven evaporation speed, thereby reducing the uniformity of the evaporation thickness and the uniformity of the composition of the film. In addition, the heater has a relatively large thermal mass, so it is difficult to achieve rapid heating and cooling of the evaporation temperature.

[0069] In addition to the flat substrate a, the semiconductor device manufacturing apparatus 10 can manufacture semiconductor devices on the flat substrate a through manufacturing processes such as a crystallization process, an ion implantation process, or an activation process.

[0070] The process chamber 100 may include an outer housing 110 , an inner housing 120 , a laser beam transmission plate 130 , a substrate support 140 , a separation partition 150 , and an infrared transmission plate 160 .

[0071] The process chamber 100 may be formed with a chamber upper space 100a for placing a flat substrate a inside the upper side of the outer cover 110. The chamber upper space 100a is formed on the upper part of the inner cover 120 inside the outer cover 110, and can provide a space for placing the flat substrate a and performing an epitaxial process. In addition, the process chamber 100 may form a chamber lower space 100b between the outer cover 110 and the inner cover 120. The chamber lower space may provide a space for accommodating a part of the gas rotating unit 400.

[0072] Furthermore, the process chamber 100 may include a process gas supply passage 100c for supplying process gas to the upper space 100a of the chamber and a process gas exhaust passage 100d for exhausting process gas to the outside. The process gas supply passage 100c may extend from the outside of the external housing 110 to the upper space 100a of the chamber. The process gas supply passage 100c may be formed in various ways according to the structures of the external housing 110, the infrared transmission plate 160, and the separation partition 150. For example, the process gas supply passage 100c may be formed by penetrating the external housing 110, the infrared transmission plate 160, and the separation partition 150. The process gas supply passage 100c may supply process gas in a direction parallel to the upper surface of the flat substrate a. The end of the process gas supply passage 100c may be formed parallel to the upper surface of the flat substrate a at the same height as the upper surface of the flat substrate a. The process gas exhaust passage 100d may be formed by extending from the process gas exhaust passage 100d to the outside of the external housing 110. Similar to the process gas supply passage 100c, the process gas exhaust passage 100d may be formed in various ways according to the structures of the external housing 110, the infrared ray transmission plate 160, and the separation partition 150. For example, the process gas exhaust passage 100d may be formed by penetrating the separation partition 150 and the external housing 110.

[0073] The process gas can flow into the space between the upper surface of the flat substrate a and the infrared transmission plate 160 through the process gas supply flow path 100c to be evaporated into a thin film. Among the process gases, the process gas that has not reacted and the by-product gas generated after evaporation can be discharged to the outside of the process chamber 100 through the process gas exhaust flow path 100d. On the other hand, hydrogen can be used as a transport gas for transporting the process gas. Among the process gases, Si2H2Cl2, SiH4, Si2H6, Si3H8 and other gases can be used as the source gas of Si, and GeH4 can be used as the Ge source gas of SiGe. In addition, the process chamber 100 can maintain a reduced pressure condition of 0.1 to 500 Torr in the process pressure.

[0074] The flat substrate a may be supported by the substrate support 140 so that the lower surface is exposed from the process chamber 100. The process chamber 100 allows the laser beam irradiated from the substrate heating unit 200 located outside to irradiate the lower surface of the flat substrate a through the laser beam transmission plate 130.

[0075] The outer cover 110 may include an outer upper side wall 111, an outer lower side wall 113, an upper plate 115, and a lower plate 117. The outer cover 110 as a whole may be formed in a hollow cylindrical shape. The outer cover 110 may be formed in a substantially cylindrical shape, a quadrangular cylindrical shape, a pentagonal cylindrical shape, or a hexagonal cylindrical shape. The outer cover 110 may be formed in a shape having a horizontal cross-sectional area larger than the area of ​​the flat substrate a placed inside.

[0076] The outer cover 110 may be formed of a metal material having durability to resist damage due to pressure and temperature changes, so as to cope with positive and negative pressure conditions and rapid temperature changes generated during the manufacturing process. In addition, the outer cover 110 may be formed of a metal material having corrosion resistance to process gases used in the manufacturing process. The outer cover 110 may be formed of a metal material such as stainless steel, Invar, Hastelloy, etc.

[0077] The outer upper side wall 111 may be formed in a cylindrical shape with a hollow interior. The outer upper side wall 111 may be formed in a cylindrical shape, a quadrangular cylindrical shape, a pentagonal cylindrical shape, or a hexagonal cylindrical shape. The outer upper side wall 111 protrudes outward, and a partition placement area 111a where the separation partition 150 is located may be formed inside. Therefore, the outer upper side wall 111 may include a vertical wall and a horizontal wall extending inwardly from the lower end of the vertical wall to a predetermined width. The outer upper side wall 111 may provide a space inside to accommodate a portion of the gas rotating part 400, the substrate holder 140, and the flat substrate a.

[0078] The outer upper side wall 111 may include a side exhaust hole 111b extending from the inner circumference to the outer circumference. The side exhaust hole 111b may provide a path for exhausting cooling gas in the side cooling gas passage formed inside the outer upper side wall 111 to the outside of the outer upper side wall 111.

[0079] The outer lower side wall 113 may be formed in a cylindrical shape with a hollow interior. The outer upper side wall 111 may be formed in a cylindrical shape, a quadrangular cylindrical shape, a pentagonal cylindrical shape, or a hexagonal cylindrical shape. The outer lower side wall 113 may be formed in a shape that is the same as or similar to the outer upper side wall 111. The outer lower side wall 113 has a smaller diameter or width than the outer upper side wall 111. The outer lower side wall 113 may be combined with the lower portion of the outer upper side wall 111. The outer lower side wall 113 may provide a space inside to accommodate a portion of the inner outer cover 120 and the gas rotating part 400.

[0080] The upper plate 115 may be in a plate shape corresponding to the upper plane shape of the outer upper side wall 111. The upper plate 115 may be combined with the upper portion of the outer upper side wall 111 and shield the upper portion of the outer upper side wall 111. The upper plate 115 may be formed of a metal material such as stainless steel, Invar, Hastelloy, etc.

[0081] The upper plate 115 may include an upper through hole 115a that penetrates from the upper surface to the lower surface on the inner side. The upper through hole 115a may have a diameter or width required to expose the entire infrared transmission plate 160. The upper through hole 115a may provide a space that exposes the upper portion of the infrared transmission plate 160 and allows the cooling gas ejected from the cooling gas ejection portion 300 to flow toward the upper surface of the infrared transmission plate 160. Therefore, the upper through hole 115a may form an upper cooling gas flow path 100e on the upper portion of the infrared transmission plate 160. The cooling gas may be nitrogen (N2), argon (Ar) or dry air. The cooling gas may cool the infrared transmission plate 160.

[0082] The upper plate 115 may further include an upper support ring 116 in a ring shape extending downward from the inner lower surface. The upper support ring 116 may be formed to a predetermined height and width. The lower surface of the upper support ring 116 may be combined with the outer upper surface of the infrared transmission plate 160 in a manner of contacting with the outer upper surface. The upper support ring 116 may increase the time for the cooling gas to stay in the upper cooling gas flow path 100e by increasing the height of the upper cooling gas flow path 100e. Therefore, the amount of cooling gas used may be reduced and the infrared transmission plate 160 may be effectively cooled.

[0083] The upper plate 115 may include an upper gas discharge hole 115b extending from the upper cooling gas flow path 100e to the outer side of the infrared transmission plate 160 or the separation partition 150. The upper gas discharge hole 115b may penetrate the side cooling gas flow path 100f formed between the outer side of the separation partition 150 and the outer housing 110. The upper gas discharge hole 115b may penetrate from the inner circumference to the outer circumference of the upper support ring 116 and be formed in a straight line shape. In addition, when the upper support ring 116 is not formed on the upper plate 115, the upper gas discharge hole 115b may be formed in a shape that is bent from the upper through hole 115a to the lower surface of the upper plate 115. The upper gas discharge hole 115b may provide a path for the cooling gas of the upper cooling gas flow path 100e to be discharged to the outer side of the separation partition 150. Furthermore, the upper gas discharge hole 115b may provide a path for the cooling gas to be discharged toward the side cooling gas flow path 100f.

[0084] The lower plate 117 may be in a plate shape corresponding to the lower end planar shape of the outer lower side wall 113. The lower plate 117 may include a lower through hole 117a on the inner side that penetrates from the upper surface to the lower surface. The lower plate 117 may be formed as a circular ring or a square ring with a specified width. The lower plate 117 may be combined with the lower end of the outer lower side wall 113 and shield the outer side of the outer lower side wall 113. The lower plate 117 may seal the space between the outer lower side wall 113 and the lower part of the inner cover 120. That is, the lower plate 117 may seal the lower part of the lower space 100b of the chamber. The lower plate 117 may be formed of a metal material such as stainless steel, Invar, Hastelloy, etc.

[0085] The inner cover 120 may be formed in a hollow cylindrical shape, and may be formed in a cylindrical shape, a quadrangular cylindrical shape, a pentagonal cylindrical shape, or a hexagonal cylindrical shape. The outer diameter or outer width of the inner cover 120 may be smaller than the inner diameter or inner width of the outer lower side wall 113. Furthermore, the height of the inner cover 120 may be smaller than the height of the outer lower side wall 113. Furthermore, the height of the upper end of the inner cover 120 may be formed to be a height at which the flat substrate a is placed inside the process chamber 100. Furthermore, the diameter or width of the inner cover 120 may be larger than the diameter or width of the flat substrate a. Furthermore, the horizontal area of ​​the inner cover 120 may be larger than the horizontal area of ​​the flat substrate a.

[0086] Furthermore, the inner cover 120 can be coupled to the outer cover 110 in such a manner that the lower side thereof is located at substantially the same height as the lower side thereof. The lower end of the inner cover 120 can be coupled to the inner side of the lower plate 117. The space between the outer side of the inner cover 120 and the inner side of the outer cover 110 can be sealed by the lower plate 117. The inner cover 120 can be formed of a metal material such as stainless steel, Invar, or Hastelloy.

[0087] The laser beam transmission plate 130 may be combined with the upper portion of the inner housing 120 and seal the upper portion of the inner housing 120. The laser beam transmission plate 130 may be located at the lower portion of the flat substrate a. The laser beam transmission plate 130 may be formed of a transparent plate that transmits a laser beam, such as quartz, glass, etc. The laser beam transmission plate 130 may provide a passage for the laser beam irradiated from the substrate heating part 200 to irradiate the lower surface of the flat substrate a. The area of ​​the laser beam transmission plate 130 may be larger than the area of ​​the flat substrate a. For example, the diameter or width of the laser beam transmission plate 130 may be larger than the diameter or width of the flat substrate a.

[0088] The substrate support 140 may include an upper support 141 and a side support 143. The substrate support 140 may be located at the upper part of the inner housing 120, and may support the lower outer side of the flat substrate a so as to expose the lower surface of the flat substrate a. That is, the substrate support 140 does not use a heater, but may directly support the lower outer surface of the flat substrate a. Therefore, the flat substrate a may be rapidly heated and cooled within the evaporation range of 400 to 1000° C. in the epitaxial process. That is, the flat substrate a may be cooled from the first evaporation temperature to the second evaporation temperature in a short time, and conversely, may be heated in a short time. In addition, the substrate support 140 may extend to the lower space 100 b of the chamber and be combined with the gas rotating part 400. The substrate support 140 may rotate the flat substrate a through the action of the gas rotating part 400. A separate hydrogen gas may be supplied to the inner space of the substrate support 140. The hydrogen gas may prevent the process gas from flowing into the inner space of the substrate support 140. Therefore, the hydrogen gas can prevent the process gas from evaporating a Si film or a SiGe film on the lower surface of the flat substrate a. Although not specifically shown, the hydrogen gas can flow into the substrate holder 140 through a separate inlet.

[0089] The upper support 141 may be provided with a substrate exposing hole 141a at the inner side and formed into a ring shape having a predetermined width. The upper support 141 may expose the lower surface of the flat substrate a and support the lower outer side of the flat substrate a. The diameter or width of the upper support 141 may be greater than the diameter or width of the flat substrate a.

[0090] The substrate exposing hole 141a is formed through the upper surface and the lower surface at the center of the upper support 141. The substrate exposing hole 141a may be formed to have a predetermined area so as to expose the entire area where the semiconductor device is formed on the lower surface of the flat substrate a.

[0091] The side bracket 143 may be roughly formed into a cylindrical shape with an upper portion and a lower portion open, and may be formed into a shape corresponding to the shape of the inner housing 120. For example, when the inner housing 120 is formed into a cylindrical shape, the side bracket 143 is formed into a cylindrical shape corresponding thereto. The side bracket 143 may be disposed in the upper chamber space 100a and the lower chamber space 100b. The upper portion of the side bracket 143 may be combined with the outer side of the upper bracket 141, and the lower portion extends toward the lower chamber space 100b and is combined with the gas rotating part 400. Therefore, the side bracket 143 may be rotated by the gas rotating part 400 and the upper bracket 141 and the flat substrate a may be rotated.

[0092] The separation baffle 150 may be in the shape of a ring having a predetermined height, and the outer diameter may be smaller than the inner diameter of the outer upper side wall 111. The inner diameter of the separation baffle 150 may correspond to the inner diameter of the outer lower side wall 113. The height of the separation baffle 150 may be smaller than the height of the outer upper side wall 111. The separation baffle 150 may be located inside the outer upper side wall 111. That is, the separation baffle 150 may be located in the baffle placement area 111a inside the outer upper side wall 111. A side cooling gas flow path 100f for flowing cooling gas may be formed between the separation baffle 150 and the outer upper side wall 111. The separation baffle 150 may be formed of a transparent material such as quartz or glass. The side cooling gas flow path 100f may provide a passage for flowing cooling gas supplied from the outside. The side cooling gas flow path 100f may be in the shape of a ring so as to surround the outer peripheral surface of the separation baffle 150. The side cooling gas flow path 100f can flow into the cooling gas flowing in the upper cooling gas flow path 100e. In addition, the side cooling gas flow path 100f can flow into the cooling gas alone. The side cooling gas flow path 100f allows the cooling gas to contact and flow with the outer peripheral surface of the separation partition 150, so that the separation partition 150 can maintain a required temperature. The process chamber 100 can control the flow rate of the cooling gas flowing in the side cooling gas flow path 100f in real time, so that the temperature of the separation partition 150 can be constantly maintained during the epitaxial process.

[0093] The infrared ray transmission plate 160 may be formed in a plate shape corresponding to the plane shape of the separation partition 150. The infrared ray transmission plate 160 may be formed of a transparent material such as quartz or glass. The infrared ray transmission plate 160 may be combined with the upper portion of the separation partition 150 and seal the upper portion of the separation partition 150. The infrared ray transmission plate 160 may be combined with the lower portion of the upper through hole 115a of the upper plate 115 and seal the upper through hole 115a. That is, the infrared ray transmission plate 160 may be combined between the separation partition 150 and the upper plate 115. The lower surface of the infrared ray transmission plate 160 may be arranged on the upper portion of the flat substrate a to face the upper surface of the flat substrate a.

[0094] The infrared ray transmission plate 160 may release radiation energy generated from the flat substrate a during the epitaxial process to the outside. In particular, the infrared ray transmission plate 160 may release radiation energy including infrared wavelengths to the outside.

[0095] Furthermore, the infrared transmission plate 160 can maintain a temperature below 400° C., preferably, a temperature of 300 to 400° C. The infrared transmission plate 160 can maintain a temperature of 300 to 400° C., thereby preventing evaporation based on source gas, thereby preventing an increase in emissivity caused by evaporation. Furthermore, the emissivity of the infrared transmission plate 160 does not increase according to the number of epitaxial processes, thereby reducing the difference in evaporation temperature between a plurality of flat substrates a undergoing the process.

[0096] The substrate heating part 200 may include a device arrangement plate 210 and a vertical cavity surface emitting laser module 220. In addition, the substrate heating part may further include a pyrometer 230. The substrate heating part 200 may be located at the lower part of the laser beam transmission plate 130 on the inner side of the inner cover 120 of the process chamber 100. The substrate heating part 200 may irradiate the lower surface of the flat substrate a with a laser beam through the laser beam transmission plate 130. The substrate heating part 200 may be formed so that the laser beam irradiates the outer periphery of the flat substrate a with a width of about 30 to 60 mm. In addition, the vertical cavity surface emitting laser module 220 may be separated from the flat substrate a by a distance of 100 to 300 mm.

[0097] In the substrate heating unit 200, a plurality of vertical cavity surface emitting laser modules 220 are arranged on the upper surface of the device arrangement plate 210 in respective forms. Figure 5 The VCSEL modules 220 may be arranged on the upper surface of the device arrangement plate 210 along the x-direction and the y-direction and arranged in a lattice shape.

[0098] The device arrangement plate 210 may be formed in a plate shape with a specified area and thickness. Preferably, the device arrangement plate 210 may be formed to correspond to the shape and area of ​​the flat substrate a. The area of ​​the device arrangement plate 210 may be larger than the area of ​​the flat substrate a. The device arrangement plate 210 may be formed to arrange the area required for the vertical cavity surface emitting laser module 220 so that the laser beam is irradiated to the outer periphery of the flat substrate a with a width of about 30 to 60 mm.

[0099] The device arrangement plate 210 may be formed of a ceramic material or a metal material having thermal conductivity. The device arrangement plate 210 may dissipate heat generated from the VCSEL module 220 .

[0100] The vertical cavity surface emitting laser module 220 may include a plurality of vertical cavity surface emitting laser devices. The vertical cavity surface emitting laser module 220 may include a device substrate 221, a vertical cavity surface emitting laser device 223, an electrode terminal 225 and a cooling block 227. In the vertical cavity surface emitting laser module 220, a plurality of module arrangement plates may be arranged in a lattice direction. The vertical cavity surface emitting laser module 220 may be arranged on the surface of the device arrangement plate 210 in the area required for irradiating the laser beam, and the laser beam irradiates the area where the thin film is formed in the flat substrate a. The vertical cavity surface emitting laser module 220 may be arranged so that the laser beam irradiates the outer periphery of the flat substrate a with a width of about 30 to 60 mm. The device substrate 221 may be bonded to the cooling block 227 by a separate adhesive layer 226.

[0101] The VCSEL module 220 can uniformly heat the flat substrate a by utilizing the radiation characteristics of the laser beam emitted from the VCSEL device 223 and the characteristics of overlapping with the laser beam of the adjacent VCSEL device 223 .

[0102] The VCSEL module 220 is composed of a plurality of VCSEL devices 223 arranged along the x-axis direction and the y-axis direction. The VCSEL module 220 can apply the same current to the entire VCSEL devices 223. Furthermore, the VCSEL module 220 can apply different power to each VCSEL device 223.

[0103] The vertical cavity surface emitting laser module 220 can irradiate a laser beam on the lower part of the flat substrate a to heat the flat substrate a. When the laser beam is irradiated on the upper part of the flat substrate a, the reflectivity of the laser beam becomes different due to the pattern of the device formed on the surface of the flat substrate a and the material other than silicon (i.e., metal, SiO2, Si3N4, etc.), so it is difficult to achieve a uniform surface temperature. In addition, when Si or SiGe is evaporated on the infrared transmission plate 160 located on the upper part of the flat substrate a, laser beam absorption will occur in the infrared transmission plate 160, so that the laser beam irradiation intensity may change.

[0104] The device substrate 221 may be formed of a general substrate for mounting electronic devices. The device substrate 221 may be divided into a device region 221a where a plurality of micro-emitters are mounted and a terminal region 221b where terminals are mounted. In the device region 221a, a plurality of micro-emitters may be arranged in a lattice shape and mounted. The terminal region 221b is disposed adjacent to the device region 221a and may be mounted with a plurality of terminals.

[0105] A plurality of the vertical cavity surface emitting laser devices 223 are arranged along the x-axis direction and the y-axis direction on the upper surface of the device substrate 221. The vertical cavity surface emitting laser device 223 can irradiate a laser beam with a single wavelength of 940nm. The vertical cavity surface emitting laser device 223 can oscillate a high-output laser beam, so that the temperature rise rate of the flat substrate a can be increased compared with the existing halogen lamp, and the life span is also relatively long.

[0106] The vertical cavity surface emitting laser device 223 is composed of a plurality of micro-emitters arranged along the x-axis direction and the y-axis direction. Although not specifically shown, the vertical cavity surface emitting laser device 223 may be provided with a light emitting frame (not shown) for fixing the micro-emitters and a power line (not shown) for supplying current to the micro-emitters. The vertical cavity surface emitting laser device 223 may apply the same current to the entire micro-emitter. Furthermore, the vertical cavity surface emitting laser device 223 may apply different power to each micro-emitter.

[0107] A plurality of the micro-emitters may be arranged in a lattice shape in the device region 221a along the x-direction and the y-direction on the upper surface of the device substrate 221. According to the area of ​​the device region 221a and the energy of the laser beam irradiated to the flat substrate a, an appropriate number of the micro-emitters may be formed at appropriate intervals. Furthermore, when the released laser beam overlaps with the laser beam of the adjacent micro-emitter, the micro-emitters may be arranged at intervals that can irradiate uniform energy.

[0108] The electrode terminal 225 may be formed in a plurality in the terminal region 221b of the device substrate 221. The electrode terminal 225 includes a + terminal and a - terminal, and may be electrically connected to the vertical cavity surface emitting laser device 223. Although not specifically shown, the electrode terminal 225 may be electrically connected to the vertical cavity surface emitting laser device 223 in a variety of ways. The electrode terminal 225 may supply the current required for driving the vertical cavity surface emitting laser device 223.

[0109] The cooling block 227 may have a planar shape corresponding to the planar shape of the device substrate 221 and a specified height. The cooling block 227 may be formed of a ceramic material or a metal material having thermal conductivity. The cooling block 227 may be bonded to the lower surface of the device substrate 221 through a separate adhesive layer. The cooling block 227 may release heat generated from the vertical cavity surface emitting laser device 223 mounted on the surface of the device substrate 221 to the lower part. Therefore, the cooling block 227 may cool the device substrate 221 and the vertical cavity surface emitting laser device 223. The unexplained reference numeral 226 may be an adhesive layer bonding the device substrate 221 and the cooling block 227.

[0110] Furthermore, a cooling flow path (not shown) for cooling water to flow may be formed inside the cooling block 227. The cooling flow path may have an inlet and an outlet formed on the lower surface, and various forms of flow paths may be formed inside the cooling block 227.

[0111] The pyrometer 230 can measure the temperature of the flat substrate a in a non-contact manner. The pyrometer 230 can use the 1μm frequency band to more accurately measure the temperature of the flat substrate. The pyrometer 230 can be located at the lower part of the through hole (not shown) formed in the vertical cavity surface emitting laser module 220. The pyrometer 230 can measure the temperature from the lower surface of the flat substrate a through the through hole. In addition, the pyrometer 230 can be located at the upper part of the flat substrate a. The pyrometer 410 can measure the temperature at the upper part of the flat substrate a. Therefore, the pyrometer can detect the temperature of the flat substrate at the upper part or the lower part of the flat substrate, so that the vertical cavity surface emitting laser submodule can heat the flat substrate to the set evaporation temperature.

[0112] A Si film or SiGe is deposited on the upper portion of the flat substrate a. x thin film, thereby being able to change the emissivity of the surface of the flat substrate a. Therefore, preferably, the pyrometer 230 can measure the lower temperature of the flat substrate a. For the pyrometer 230, interference may occur between the laser beam of the vertical cavity surface emitting laser module 220 and the detection light source of the pyrometer. The laser beam irradiated from the vertical cavity surface emitting laser module 220 is a laser beam of a single wavelength, and therefore has the advantage of being distinguishable from the wavelength band used by the pyrometer 230 to detect temperature. Therefore, the laser beam of the vertical cavity surface emitting laser module 220 will not interfere with the temperature detection of the pyrometer 230, and therefore, the pyrometer 230 can accurately detect the temperature of the flat substrate a under low temperature conditions below 800°C.

[0113] A plurality of the pyrometers 230 may be distributed and arranged at the lower part of the VCSEL module 220. The pyrometers 230 may be radially spaced from the center of the VCSEL module 220 to the periphery. The pyrometers may be respectively arranged corresponding to the VCSEL submodules, and may measure the temperature of the wafer corresponding to each region heated by the VCSEL submodule. Therefore, the output is individually fed back to the VCSEL submodule corresponding to each region to make the temperature of the wafer uniform, so that the temperature of the pyrometer 230 input during the rotation of the flat substrate a is the same.

[0114] The cooling gas injection unit 300 may include an injection housing 310 and a gas injection plate 320. The cooling gas injection unit 300 may inject cooling gas onto the upper surface of the infrared transmission plate 160 to cool the infrared transmission plate 160. The cooling gas may be nitrogen (N2) gas, argon (Ar) gas, or compressed cooling air.

[0115] The ejection cover 310 may include a cooling gas inflow hole 311. The ejection cover 310 may be in the shape of a cylinder with a hollow interior and an open bottom. The planar shape of the ejection cover 310 may correspond to the upper plate 115 of the outer cover 110. The ejection cover 310 may have a cooling gas inflow space formed therein for the cooling gas to flow in.

[0116] The cooling gas inflow hole 311 may be formed in the upper plate or the side plate of the injection housing 310 in the shape of a hole that penetrates from the outside to the inside, that is, to the cooling gas inflow space. One or more cooling gas inflow holes 311 may be formed according to the plane area of ​​the injection housing 310. The cooling gas inflow hole 311 may provide a path for the cooling gas to flow into the cooling gas inflow space.

[0117] The gas injection plate 320 may include a gas injection hole 321. The gas injection plate 320 may be plate-shaped and may have an area corresponding to a plane area of ​​the injection cover 310. The gas injection plate 320 may be coupled to the lower portion of the injection cover 310 and shield the lower portion of the injection cover 310.

[0118] The gas injection hole 321 is formed through the upper surface to the lower surface of the gas injection plate 320. The gas injection hole 321 can connect the cooling gas inflow space and the upper through hole 115a of the upper plate 115. The gas injection hole 321 can inject the cooling gas flowing from the outside into the cooling gas inflow space through the upper through hole 115a and the infrared transmission plate 160.

[0119] The plurality of gas injection holes 321 may be formed spaced apart from the gas injection plate 320 as a whole. The gas injection holes 321 may more uniformly inject cooling gas toward the infrared transmission plate 160. Therefore, the gas injection plate 320 may more uniformly cool the infrared transmission plate 160 below.

[0120] The gas rotating unit 400 may include an inner rotating unit 410 and an outer rotating unit 420. The gas rotating unit 400 may rotate the substrate support 140 in a horizontal direction in a non-contact manner. More specifically, the inner rotating unit 410 may be combined with the lower part of the substrate support 140 in the chamber lower space 100b of the process chamber 100. In addition, the outer rotating unit 420 may be disposed on the outer side of the process chamber 100 facing the inner rotating unit 410. The outer rotating unit 420 may rotate the inner rotating unit 410 in a non-contact manner by using magnetic force.

[0121] The inner rotating unit 410 may be formed into a structure such as a rotor of a motor. For example, the inner rotating unit 410 may be in a ring shape as a whole, and may be formed into a magnet structure in which N poles and S poles are alternately formed along the circumferential direction. The inner rotating unit 410 may be combined with the side bracket 143 of the substrate bracket 140. In this case, the inner rotating unit 410 may be spaced apart from the upper side of the lower plate 117. On the other hand, although not specifically shown, the inner rotating unit 410 may be supported by a separate supporting unit so as to prevent vibration or to rotate smoothly during rotation. For example, the lower portion of the inner rotating unit 410 may be supported by a support bearing or a roller.

[0122] The outer rotating unit 420 may be formed as a structure such as a stator of a motor. For example, the outer rotating unit 420 may include an iron core formed in a ring shape and a wire wound around the iron core. The outer rotating unit 420 may rotate the inner rotating unit 410 by a magnetic force generated by a power source supplied to the wire. The outer rotating unit 420 may be located outside the outer housing 110 so as to face the inner rotating unit 410 with the outer housing 110 as a reference. That is, the outer rotating unit 420 may be located outside with the outer housing 110 as a reference at the same height as the inner rotating unit 410.

[0123] Next, the substrate heating unit 200 of the semiconductor device manufacturing apparatus 10 used in the semiconductor device manufacturing method according to an embodiment of the present invention will be described in more detail.

[0124] The substrate heating part 200 may be formed by a plurality of vertical cavity surface emitting laser modules 220. The vertical cavity surface emitting laser module 220 may be formed by a plurality of vertical cavity surface emitting laser devices 223. And, the vertical cavity surface emitting laser module 220 is formed by arranging at least two vertical cavity surface emitting laser sub-modules. The vertical cavity surface emitting laser sub-module may include a device area 221a and a terminal area 221b, in which the vertical cavity surface emitting laser devices 223 are arranged at equal intervals, and in the terminal area 221b, the vertical cavity surface emitting laser devices 223 are connected in series or in parallel and connected to an external power supply. And, the vertical cavity surface emitting laser module 220 may include at least two device areas 221a and terminal areas 221b. The vertical cavity surface emitting laser module 220 may be composed of at least two vertical cavity surface emitting laser sub-modules, and may be arranged in a plane so that the laser beam can be irradiated to the entire area of ​​the flat substrate a.

[0125] The vertical cavity surface emitting laser device 223 is quadrilateral in shape and has a width of approximately 1 to 2 mm. It may have an epitaxial region forming a plurality of micro-emitters and an electrode region forming electrodes electrically connecting the micro-emitters. In the vertical cavity surface emitting laser device 223, there is no laser beam source of the micro-emitter in the electrode region. Therefore, the distribution and intensity of the laser beam in the electrode region are determined by the overlap caused by the radiation (divergence) of the laser beams of adjacent micro-emitters. The micro-emitter has a divergence angle (divergence angle) of 10 to 30°. Therefore, in order to make the intensity of the laser beam irradiated from the vertical cavity surface emitting laser device 223 uniform, the shape and intensity of the laser beam overlapping in the electrode region should be the same as the shape and intensity of the laser beam released from the epitaxial region of the micro-emitter. The shape and intensity of the laser beam change according to the overlapping distance. Therefore, the uniformity of the laser beam intensity of the VCSEL module 220 is affected by the size and setting shape of the electrode area existing in the VCSEL device unit (short range arrangement), the VCSEL sub-module unit (medium range arrangement), and the overall module unit (long range arrangement).

[0126] The overlap between the multiple laser beams released from the micro-emitter changes according to the spacing distance between the flat substrate a and the micro-emitter, so there will be a specific spacing distance with the highest uniformity. The spacing distance is optimized in the distances where the laser beam overlap is optimized in the short range, medium range, and long range. Preferably, the optimized spacing distance is 100 to 300 mm to realize the epitaxial process device. That is, the spacing distance between the vertical cavity surface emitting laser device 223 or the vertical cavity surface emitting laser module 220 and the flat substrate a can be 100 to 300 mm.

[0127] In the arrangement of micro-emitters located inside the vertical cavity surface emitting laser device 223 and the short-range arrangement of setting electrodes, the pitch between micro-emitters, that is, the maximum separation distance can be 0.1mm. When the area of ​​the electrode is 1 / 10 of the device size (1mm×1mm), the size of the electrode area can be less than 0.1mm. And the spacing of the electrodes can be 0.1mm. There are no micro-emitters in the electrode space within the vertical cavity surface emitting laser, so the non-uniformity of the released laser beam energy is 0.01%. Therefore, the short-range setting within the vertical cavity surface emitting laser device 223 easily achieves the target uniformity of 0.2% of the evaporation temperature.

[0128] In the arrangement (mid-range arrangement) in which the VCSEL device 223 is arranged in the VCSEL submodule, when the spacing between the VCSEL devices 223 and the VCSEL devices 223 is 1 mm or less, the uniformity of the generated laser beam energy can be 0.1% or less. When the spacing between the VCSEL devices 223 and the VCSEL devices 223 is greater than 1.5 mm, the non-uniformity of the laser beam energy becomes a poor 0.2% or more. Therefore, in order to achieve a uniformity of laser beam energy of 0.2% or less in a plurality of the VCSEL devices, the spacing distance between the VCSEL devices is at least 1 mm or less.

[0129] The VCSEL submodule needs to form a terminal area 221b of an input terminal and an output terminal connected to an external power source, and the required area should be at least 5×5 mm. When the terminal area 221b is larger than 5 mm, no laser beam will be generated from the terminal, so the unevenness of the generated laser beam energy can be more than several %. Moreover, in the VCSEL module 220 in which the VCSEL submodules are arranged, the blank space including the terminal area 221b of the VCSEL submodule is at least 5×5 mm. When the size of the blank space increases, the unevenness of the laser beam energy may be further reduced.

[0130] like Figure 5 As shown, the VCSEL module 220 may be formed as a structure formed by combining VCSEL submodules. The terminal regions 221b of the VCSEL submodules are located diagonally to each other in the VCSEL module 220 and may protrude in opposite directions. The terminal regions 221b may be formed roughly in a rectangular shape.

[0131] In the VCSEL module 220, the blank area including the terminal area 221b is linearly arranged along one side. When the blank area including the terminal area 221b is linearly arranged, the overlap of the laser beams generated in the blank area occurs in the vertical direction of the terminal area 221b, and the overlap distance in this direction is constant in the entire VCSEL module 220, so that laser beams overlapped in the same form can be formed.

[0132] The VCSEL module 220 can arrange the VCSEL submodules so that the terminal area 221b is arranged in a straight line. Preferably, in the VCSEL submodule, one side length of the rectangular or square device area 221a is greater than 10 mm and less than 40 mm. When the length of the device area 221a is too small, the number of VCSEL submodules corresponding to the flat substrate area becomes too large, and there is a problem of difficulty in forming the terminal area 221b. Moreover, when one side length of the device area 221a is too large, the number of VCSEL submodules will be reduced, but the range of the flat substrate a area served by each VCSEL submodule becomes wider, making it difficult to achieve regional control for adjusting local temperature deviations.

[0133] In the vertical cavity surface emitting laser module 220, the terminal area 221b protruding from the device area 221a can be determined in consideration of the size and wiring of the terminal. Preferably, the protruding length protruding from the device area 221a can be less than 10 mm. For example, the protruding length can be 7 mm. The vertical cavity surface emitting laser module 220 is provided by a plurality of vertical cavity surface emitting laser sub-modules, and the terminal area 221b can form a straight line shape in one direction. The vertical cavity surface emitting laser module 220 can be arranged so that the separation distance between the vertical cavity surface emitting laser sub-modules can be less than 10 mm.

[0134] Next, the evaluation results of the semiconductor device manufacturing apparatus of the present invention will be described.

[0135] Figure 6The figure is a uniformity chart of the laser beam according to the separation distance between the vertical cavity surface emitting laser module and the wafer. The overlap of the laser beam irradiated from the vertical cavity surface emitting laser module occurs in the terminal area between the adjacent vertical cavity surface emitting laser modules facing each other in the terminal area. Since the overlap distance is the same, the same overlap effect can be obtained. The separation distance at which the overlap unevenness of the laser beam reaches the minimum value is 120mm and 250mm. The 120mm is the overlap between the most adjacent vertical cavity surface emitting laser devices, and the 250mm is the overlap of the vertical cavity surface emitting laser device closest to the terminal and the vertical cavity surface emitting laser device second adjacent to the terminal. The overlap uniformity in the 120mm is 0.6%, and the overlap uniformity in the 250mm is 0.25%. The vertical cavity surface emitting laser module can obtain an extremely excellent uniformity of 0.25% when the separation distance is 250mm, but cannot reach the required uniformity of 0.2%.

[0136] The VCSEL module can rotate the wafer in order to achieve a uniformity of the evaporation temperature below 0.2%. The overlapping non-uniform areas of the VCSEL module can be linearly distributed in one dimension. Therefore, by rotating the wafer, the linear non-uniform areas can be effectively homogenized. The degree of homogenization can be changed according to the rotation speed of the wafer, and a uniformity of 0.1% can be obtained at a rotation speed of 20 to 50 rpm suitable for the epitaxial process.

[0137] On the other hand, the terminal area of ​​the VCSEL module is an area where the laser beams released from adjacent VCSEL devices overlap each other. Therefore, the width of the terminal area may affect the uniformity. The laser beam released from the micro-emitter of the VCSEL device has a Gaussian (TEM) 00 mode) or M-mode (TEM 01 mode) beam profile, therefore, the overlapping beam intensity is not exactly consistent with the beam intensity within the VCSEL device. Therefore, the VCSEL module can only improve uniformity when the overlapping distance is small. When the width of the terminal area is increased from 0.7mm to 1.1mm, the uniformity becomes a poor 0.76%. Therefore, in order to obtain the target uniformity of less than 0.2%, the width of the terminal area of ​​the VCSEL module should be less than 10mm. Therefore, the VCSEL module sets the VCSEL sub-module as above and rotates the wafer, thereby achieving the required uniformity of 0.2% in the epitaxial process.

[0138] Furthermore, in the VCSEL module, radial zone control from the center to the periphery can be performed by differentiating the VCSEL submodules to form the same zone, and a plurality of pyrometers for measuring temperature are installed on the wafer corresponding to each zone. The temperature of the wafer is made uniform by feeding back individual applied outputs to the VCSEL submodules corresponding to each zone, so that the temperature input to the pyrometer is the same during the rotation of the wafer.

[0139] Figure 7 This is a graph showing the temperature of a wafer when the power applied to the vertical cavity surface emitting laser module is increased and the wafer is heated. The heating rate is approximately 150°C / sec. It is known that the wafer can be rapidly heated at a temperature below 600°C. Therefore, it can be confirmed that the vertical cavity surface emitting laser module can achieve the rapid temperature change required for the epitaxial process of the present invention at a low temperature below 600°C.

[0140] Figure 8 Graph showing temperature variation characteristics of a wafer when the wafer is heated by a VCSEL module. The wafer is repeatedly heated and cooled between 600°C and 680°C.

[0141] The time required for the wafer to be heated from 600° C. to 680° C. is 1.2 seconds without overheating, and the time required for the wafer to be cooled from 680° C. to 600° C. is about 3 seconds without underheating.

[0142] The results of evaluation under the same conditions show that the heating and cooling of a general epitaxial device takes about 90 to 150 seconds. Therefore, the semiconductor device manufacturing device of one embodiment of the present invention can achieve heating and cooling within 1 to 3 seconds, thereby [Si / SiGe x ]n’s multilayer film manufacturing speed was increased from 2 times to 10 times.

[0143] The embodiments disclosed in this specification only select the most preferred embodiments from multiple feasible examples to help ordinary technicians in the technical field to understand the present invention. The technical concept of the invention is not limited to or restricted to this embodiment. Various changes, additions and modifications can be made without exceeding the scope of the technical concept of the present invention. Not only that, other equivalent embodiments can also be realized.

[0144] Industrial Applicability

[0145] The present invention is applicable to the field of manufacturing semiconductor devices using an epitaxial process and the field of manufacturing semiconductor device manufacturing equipment.

Claims

1. A method for manufacturing a semiconductor device, wherein a flat substrate is heated by a vertical cavity surface emitting laser device, and a multilayer thin film is formed on the upper portion of the flat substrate by alternately evaporating a first thin film and a second thin film through an epitaxial process, wherein the method for manufacturing a semiconductor device is characterized by comprising: A first thin film evaporation step of supplying a first source gas to an upper portion of the flat substrate at a first evaporation temperature to evaporate the first thin film; An evaporation temperature lowering step, reducing the temperature of the flat substrate from the first evaporation temperature to the second evaporation temperature; a second thin film evaporation step of supplying a second source gas at the second evaporation temperature to evaporate a second thin film on the upper portion of the first thin film; as well as The vapor deposition temperature increasing step increases the temperature of the flat substrate from the second vapor deposition temperature to the first vapor deposition temperature.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: The first film is a Si film, and the second film is a SiGe film. x Thin film, wherein 0.1<x<0.

4.

3. The method for manufacturing a semiconductor device according to claim 2, wherein: The first evaporation temperature is 600-800° C., the second evaporation temperature is 500-750° C., In the evaporation temperature decreasing step, the evaporation temperature decreasing time is 1 to 10 seconds. In the vapor deposition temperature increasing step, the vapor deposition temperature increasing time is 1 to 5 seconds.

4. The method for manufacturing a semiconductor device according to claim 2, wherein: The first evaporation temperature and the second evaporation temperature are set so that a first evaporation rate of the first thin film is 0.1 to 2 times of a second evaporation rate of the second thin film.

5. The method for manufacturing a semiconductor device according to claim 1, wherein: The first thin film evaporation step and the second thin film evaporation step respectively control the first evaporation temperature and the second evaporation temperature to have a uniformity of 0.2% or less.

6. The method for manufacturing a semiconductor device according to claim 1, wherein: The outer side of the flat substrate is supported so that the lower surface thereof is exposed, and the laser beam irradiated from the vertical cavity surface emitting laser device is directly irradiated toward the lower surface of the flat substrate. When the laser beam is irradiated, the flat substrate is rotated.

7. The method for manufacturing a semiconductor device according to claim 1, wherein: using a substrate heating portion including the vertical cavity surface emitting laser device that irradiates a laser beam for heating the flat substrate, The substrate heating unit includes a vertical cavity surface emitting laser module, wherein the vertical cavity surface emitting laser module is composed of at least two vertical cavity surface emitting laser sub-modules including a device region and a terminal region, at least two vertical cavity surface emitting laser devices are arranged in the device region, and terminals for supplying power to the vertical cavity surface emitting laser devices are arranged in the terminal region. The vertical cavity surface emitting laser modules are arranged in an area larger than the area of ​​the flat substrate, The vertical cavity surface emitting laser module is spaced apart from the flat substrate by a distance of 100 to 300 mm.

8. The method for manufacturing a semiconductor device according to claim 7, wherein: In the VCSEL module, the VCSEL sub-modules are arranged such that terminal regions of the VCSEL sub-modules are connected to each other along one direction to form a straight line shape.

9. The method for manufacturing a semiconductor device according to claim 7, wherein: The vertical cavity surface emitting laser module irradiates a laser beam so that the temperature of the flat substrate has a temperature uniformity of less than 0.2%, In the vertical cavity surface emitting laser device, the maximum separation distance of the micro-emitter arrangement is 0.1 mm, the size of the electrode area is less than 0.1 mm, In the VCSEL submodule, the VCSEL devices are spaced apart by less than 1 mm. The VCSEL module is arranged such that the VCSEL submodules are separated by a distance less than 10 mm.

10. The method for manufacturing a semiconductor device according to claim 7, wherein: The vertical cavity surface emitting laser submodules receive power independently respectively, A pyrometer for detecting the temperature of the flat substrate is used at the bottom of the flat substrate to individually control the light emission intensity of the vertical cavity surface emitting laser sub-modules, so that the flat substrate is heated to a set evaporation temperature.

11. The method for manufacturing a semiconductor device according to claim 7, wherein: The flat substrate is rotated by magnetic suspension. When the flat substrate rotates, it rotates without being disturbed by the VCSEL module.

12. A semiconductor device manufacturing apparatus, which performs the semiconductor device manufacturing method according to claim 1, characterized in that: using a substrate heating portion including a vertical cavity surface emitting laser device that irradiates a laser beam for heating a flat substrate, The substrate heating unit includes a vertical cavity surface emitting laser module, wherein the vertical cavity surface emitting laser module is composed of at least two vertical cavity surface emitting laser sub-modules including a device region and a terminal region, at least two vertical cavity surface emitting laser devices are arranged in the device region, and terminals for supplying power to the vertical cavity surface emitting laser devices are arranged in the terminal region. The vertical cavity surface emitting laser modules are arranged in an area larger than the area of ​​the flat substrate, The vertical cavity surface emitting laser module is spaced apart from the flat substrate by a distance of 100 to 300 mm.

13. The semiconductor device manufacturing apparatus according to claim 12, characterized in that: In the VCSEL module, the VCSEL sub-modules are arranged such that terminal regions of the VCSEL sub-modules are connected to each other along one direction to form a straight line shape.

14. The semiconductor device manufacturing apparatus according to claim 12, wherein: The vertical cavity surface emitting laser module irradiates a laser beam so that the temperature of the flat substrate has a temperature uniformity of less than 0.2%, In the vertical cavity surface emitting laser device, the maximum spacing distance of the micro-emitter arrangement is 0.1 mm, the size of the electrode area is less than 0.1 mm, In the VCSEL submodule, the VCSEL devices are spaced apart by less than 1 mm. The VCSEL module is arranged such that the VCSEL submodules are separated by a distance less than 10 mm.

15. The semiconductor device manufacturing apparatus according to claim 12, wherein: The vertical cavity surface emitting laser submodules receive power independently respectively, A pyrometer for detecting the temperature of the flat substrate is used at the upper or lower part of the flat substrate to individually control the light emission intensity of the vertical cavity surface emitting laser submodule, so that the flat substrate is heated to a set evaporation temperature.

16. The semiconductor device manufacturing apparatus according to claim 12, wherein: The flat substrate is rotated by magnetic suspension. When the flat substrate rotates, it rotates without being disturbed by the VCSEL module.

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