CMP conditioning disk and method for manufacturing CMP conditioning disk

Abstract

The present application provides a method of manufacturing a CMP adjustment disc, comprising: a primary forming layer forming step of forming a primary forming layer on an outer surface of a shank base and arranging a plurality of diamonds on the primary forming layer; and a secondary molded layer forming step of forming a secondary molded layer on an upper surface of the primary molded layer and exposing at least a portion of the diamond in the secondary molded layer.

Description

Technical Field

[0001] The present disclosure relates to a CMP conditioning disk and a method of manufacturing the CMP conditioning disk. Background Art

[0002] Generally, a planarization process using chemical mechanical polishing (CMP) is a process in which a carrier holds a wafer to be polished and a surface plate and the carrier are moved relative to each other to perform a polishing process while slurry is fed onto a polishing pad of the surface plate.

[0003] The many foam holes on the surface of the polishing pad are used to hold new polishing liquid, thereby ensuring consistent polishing efficiency and polishing uniformity across the wafer. However, due to the pressure and relative speed applied during polishing, the surface of the polishing pad deforms unevenly over time, and the holes on the polishing pad are clogged with polishing residues, making the polishing pad unable to work properly.

[0004] In order to solve the uneven deformation of the polishing pad and the clogging of the pores, a CMP pad conditioner is used. The CMP pad conditioner finely polishes the surface of the polishing pad, thereby allowing new micropores to be formed on the polishing pad. A fusion-type CMP pad conditioner, which is a type of CMP pad conditioner, is generally used to condition the polishing pad during the CMP process by fixing the diamond on a handle made of stainless steel using a fusion method. In the diamond setting process for adjusting the diamond position of a conventional fusion-type CMP pad conditioner, the diamond passes through a hole of a predetermined size formed in an etched mask substrate, and then the diamond is deposited on the disk through a binder sprayed on a metal powder layer on the handle.

[0005] However, in the case of a conventional CMP pad conditioner, there is a problem in that during a process in which powder for brazing becomes liquid and solidifies through heat treatment after a diamond deposition process, the portion holding the diamond becomes liquid, at which time the position and posture of the diamond are deformed, causing the diamond to be irregularly arranged on the shank.

[0006] (Prior art literature)

[0007] (Patent Document) Korean Patent Application Publication No. 10-2012-0058303. Summary of the invention

[0008] In view of the above, the present disclosure provides a CMP conditioning disk and a method of manufacturing the CMP conditioning disk, the CMP conditioning disk being able to have a plurality of diamonds uniformly arranged on a handle base.

[0009] According to embodiments of the present disclosure, effective pad conditioning and low diamond wear may be achieved by evenly arranging multiple diamonds in the X, Y, and Z directions on the shank base during the brazing process.

[0010] Furthermore, according to an embodiment of the present disclosure, a pad cutting rate (PCR) may be increased and the life of a CMP conditioning disk may be extended by arranging a plurality of diamonds at uniform intervals and uniform heights on a handle base through two forming processes.

[0011] According to one aspect of the present disclosure, there is provided a method for manufacturing a CMP adjustment disk, comprising: a primary shaping layer forming step of forming a primary shaping layer on an outer surface of a handle base and arranging a plurality of diamonds on the primary shaping layer; and a secondary shaping layer forming step of forming a secondary shaping layer on an upper surface of the primary shaping layer and exposing at least a portion of the diamonds in the secondary shaping layer.

[0012] Furthermore, in the method of manufacturing a CMP conditioning pad, the primary shaping layer forming step includes forming the primary shaping layer by a brazing process or a sintering process, and the secondary shaping layer forming step includes forming the secondary shaping layer by a brazing process.

[0013] Furthermore, in the method for manufacturing a CMP conditioning disk, the primary forming layer forming step includes: a primary metal powder layer forming step of providing a primary metal powder layer and a pre-sintered primary metal powder layer on the outer surface of a handle base; an adhesive layer forming step of forming an adhesive layer on the outer surface of the primary metal powder layer; and a primary diamond fixing step of temporarily fixing diamonds to the outer surface of the adhesive layer.

[0014] Furthermore, in the method of manufacturing a CMP conditioning disk, the primary diamond fixing step includes temporarily holding a plurality of diamonds in a regular pattern of rows and columns on a suction pressure device and pressing and fixing the plurality of diamonds on the primary shaping layer using the suction pressure device to maintain an upright posture of the plurality of diamonds.

[0015] In addition, in the method for manufacturing a CMP adjustment disk, the secondary shaping layer forming step includes: a secondary metal powder layer forming step of pre-sintering a secondary metal powder layer on the outer surface of the primary shaping layer to form a secondary shaping layer; and a polishing step of dry polishing the secondary shaping layer to cover all diamonds or expose at least a portion of the diamonds.

[0016] Furthermore, in the method of manufacturing a CMP conditioning pad, the secondary shaping layer forming step further includes a secondary diamond fixing step of completely fixing the diamond in the secondary shaping layer by shrinkage of the secondary shaping layer by dry polishing.

[0017] According to another aspect of the present disclosure, there is provided a CMP conditioning disk comprising: a handle base; a primary shaping layer formed on an outer surface of the handle base; a secondary shaping layer formed on an outer surface of the primary shaping layer; and a plurality of diamonds arranged in the primary shaping layer and the secondary shaping layer, at least a portion of the diamonds being exposed from the secondary shaping layer.

[0018] Furthermore, in the CMP conditioning disk, the primary shaping layer is formed at a melting point that is the same as that of the secondary shaping layer, a melting point that is lower than that of the secondary shaping layer, or a melting point that is higher than that of the secondary shaping layer.

[0019] Furthermore, in the CMP conditioning disk, a thickness between an outer surface of the primary shaping layer and an outer surface of the secondary shaping layer is greater than a thickness between an outer surface of the primary shaping layer and an outer surface of the handle base.

[0020] Furthermore, a CMP conditioning disk is manufactured by the method of manufacturing a CMP conditioning disk. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a diagram showing a configuration of a CMP conditioning disk according to one embodiment of the present disclosure.

[0022] Figure 2 It is shown Figure 1 An enlarged view of portion "A".

[0023] Figure 3 yes Figure 1 Enlarged photo of .

[0024] Figure 4A and 4B It is shown separately Figure 1 Status diagram of the CMP adjustment disk and the conventional adjustment disk.

[0025] Figure 5A and 5B 1 and 2 are photographs respectively showing diamond arrangement states of a CMP conditioning disk according to the present disclosure and a conventional conditioning disk.

[0026] Fig. 6A and 6B 1 and 2 are photographs respectively showing diamond arrangement states of a CMP conditioning disk according to the present disclosure and a conventional conditioning disk.

[0027] Figure 7 is a graph showing the relationship between pad life and PCR for a CMP conditioning disk according to the present disclosure (a) and a conventional conditioning disk (b).

[0028] Figure 8 is a block diagram illustrating a method of manufacturing a CMP conditioning disk according to one embodiment of the present disclosure.

[0029] Fig. 9 A state diagram illustrating a method of manufacturing a CMP conditioning disk according to one embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0030] The specific embodiments for realizing the technical idea of ​​the present disclosure are described in detail below with reference to the accompanying drawings.

[0031] Furthermore, when describing the present disclosure, when it is determined that a detailed description of a related known configuration or function may obscure the gist of the present disclosure, the detailed description thereof will be omitted.

[0032] Further, when a component is referred to as being "coupled", "supported", "connected", "supplied", "communicated" or "in contact with" another component, it can be understood that the component can be directly coupled, supported, connected, supplied, communicated or in contact with another component, but other components may also exist in between.

[0033] The terms used in this specification are only used to describe specific embodiments and are not intended to limit the present disclosure. Unless the context clearly dictates otherwise, a singular expression includes a plural expression.

[0034] In addition, it should be noted in advance that in this specification, expressions such as upper side, lower side, side, etc. are explained with reference to the illustrations in the drawings, and if the direction of the object changes, there may be different expressions. For the same reason, some components in the drawings are exaggerated, omitted or schematically shown, and the size of each component does not fully reflect the actual size.

[0035] In addition, terms including ordinal numbers such as 1st, 2nd, etc. may be used to describe various components, but the corresponding components are not limited by these terms. These terms are only used to distinguish one component from another component.

[0036] The term "comprising" used in this specification is intended to specify certain specific features, regions, integers, steps, operations, elements and / or components, but does not exclude the existence or addition of other specific features, regions, integers, steps, operations, elements, components and / or combinations.

[0037] Hereinafter, a specific configuration of a CMP conditioning disk and a method of manufacturing the CMP conditioning disk according to the present disclosure will be described with reference to the accompanying drawings.

[0038] Reference Figures 1 to 7 , the CMP conditioning disc 10 according to one embodiment of the present disclosure may have a plurality of diamonds 400 uniformly arranged on the handle base 100. The CMP conditioning disc 10 may include: a handle base 100, a primary shaping layer 200, a secondary shaping layer 300, and diamonds 400. In this specification, the shaping layer is defined and used to indicate that the region is divided into primary and secondary not only in the powder state before heat treatment but also in the brazing or sintering state after heat treatment. When it is necessary to distinguish before and after heat treatment, it is expressed as a shaping layer before heat treatment, and a shaping layer or a fusion layer (also called a brazing layer) or a sintering layer after heat treatment.

[0039] Specifically, the handle base 100 may be a back plate of the CMP conditioning disk 10. The primary shaping layer 200 may be formed on an outer surface (top surface) of the handle base 100. Since the handle base 100 corresponds to a typical handle used in a CMP conditioning disk, a detailed description thereof will be omitted.

[0040] The primary forming layer 200 may be a fixing layer for preliminarily fixing the plurality of diamonds 400 to the outer surface of the handle base 100. As an example, the primary forming layer 200 may be a brazing layer formed on the outer surface of the handle base 100 by a brazing process (first brazing process). In the present embodiment, the primary forming layer 200 is described as a brazing layer, but is not limited thereto, and the primary forming layer 200 may be a sintered layer formed on the outer surface of the handle base 100 by a sintering process. In the primary forming layer 200, the plurality of diamonds 400 may be arranged in a regular pattern forming rows and columns, and may be preliminarily fixed (temporarily fixed).

[0041] The primary forming layer 200 before heat treatment may include a primary metal powder layer 210 and an adhesive layer 220. The adhesive layer 220 may be an adhesive layer for preliminarily fixing (temporarily fixing) the diamond 400 to the primary metal powder layer 210. A plurality of diamonds 400 may be regularly arranged and temporarily fixed to the primary metal powder layer 210 on which the adhesive layer 220 is applied. The primary metal powder layer 210 may be applied to the outer surface of the handle base 100 and preliminarily sintered. The thickness of the primary forming layer may vary depending on the average size of the diamond used. Typically, #60, #80, #100, and #120 diamonds are mainly used in CMP pad conditioners. For example, when a #80 diamond having a diameter range of 151 μm to 197 μm and an average diameter of about 170 μm is used, the thickness of the primary forming layer 200 may be 20 μm to 100 μm before brazing (before fusion) and may be 14 μm to 70 μm after brazing (after fusion). The thickness of the shaping layer may vary proportionally depending on the average size of the diamonds.

[0042] The thickness L2 between the outer surface of the primary shaping layer 200 and the outer surface of the secondary shaping layer 300 may be greater than the thickness L1 between the outer surface of the primary shaping layer 200 and the outer surface of the handle base 100. If the thickness L2 between the outer surface of the primary shaping layer 200 and the outer surface of the secondary shaping layer is greater than the thickness L1 from the outer surface of the primary shaping layer 200 to the outer surface of the handle base 100, the lower center of the diamond 400 is completely fixed by the primary shaping layer 200, so that when the diamond 400 is placed and fixed by the secondary shaping layer 300, the arrangement of the diamond 400 can be stably maintained by the primary shaping layer 200 and the secondary shaping layer 300.

[0043] In the case of the brazing process, the melting point of the primary shaping layer 200 may be the same as that of the secondary shaping layer 300, or may be higher than that of the secondary shaping layer 300. If the melting point of the primary shaping layer 200 is higher than that of the secondary shaping layer 300, the primary shaping layer 200 may be heat-treated at a higher temperature than the secondary shaping layer 300. In particular, if the melting point of the primary shaping layer 200 is higher than that of the secondary shaping layer 300, the primary shaping layer 200 may further suppress positional displacement of the diamond 400 during the brazing process for the secondary shaping layer 300. When the composition of the primary shaping layer 200 is composed of a composition having a higher melting point than that of the secondary shaping layer 300, during the brazing process for the secondary shaping layer 300, the primary shaping layer 200 may have a high viscosity or may exist in a sintered state (including a solid phase) even if the secondary shaping layer 300 is entirely liquefied. As an example, the brazing temperature for forming the primary shaping layer 200 may be 900° C. to 1300° C., and the brazing pressure may be 10×10 -3 Pa to 10ⅹ10 -2 Meanwhile, when the primary shaped layer is formed through a sintering process, the heat treatment temperature of the primary shaped layer 200 may be different from the heat treatment temperature of the secondary shaped layer 300 .

[0044] The secondary forming layer 300 may be a fixing layer for secondarily fixing the plurality of diamonds 400 to the outer surface of the handle base 100. For example, the secondary forming layer 300 may be a brazing layer formed on the outer surface of the primary forming layer 200 by a brazing process (second brazing process). The secondary forming layer 300 may be a secondary metal powder layer for completely fixing the diamonds 400. The secondary metal powder layer may have the same composition as the primary metal powder layer 210 of the primary forming layer 200. In the present embodiment, the secondary metal powder layer has been described as having the same composition as the primary metal powder layer 210 of the primary forming layer 200, but the present disclosure is not limited thereto, and the composition of the secondary metal powder layer may be different from that of the primary metal powder layer 210. If the compositions of the secondary metal powder layer and the primary metal powder layer 210 are different from each other, the melting points of the primary forming layer 200 and the secondary forming layer 300 may be controlled differently from each other.

[0045] The secondary shaping layer 300 may be subjected to a heat treatment process in which the secondary shaping layer 300 is heated to a preset temperature range. In a state where the plurality of diamonds 400 are temporarily fixed by the primary shaping layer 200, the plurality of diamonds 400 may be completely fixed in the secondary shaping layer 300 in a regular shape forming rows and columns. For example, when #80 diamond particles having an average size of 170 μm are used, the thickness of the secondary shaping layer 300 may be 100 μm to 250 μm before brazing (before fusion), and may be 70 μm to 175 μm after brazing (after fusion).

[0046] The diamond 400 may be provided in plurality and arranged in a regular pattern in the primary shaping layer 200 and the secondary shaping layer 300. At least a portion of the diamond 400 may be exposed from the secondary shaping layer 300. When the primary shaping layer 200 is in a pre-sintered state, the posture (orientation) of the diamond 400 may be adjusted to an upright state by a separate suction pressurizing device (not shown). Of course, the position and posture of some diamonds 400 may be offset during the sequential heat treatment process of the primary shaping layer 200 and the secondary shaping layer 300, but the offset of the position and posture of the diamond 400 may be minimized by two processes (e.g., a brazing process) for forming the primary shaping layer 200 and the secondary shaping layer 300.

[0047] At least a portion of the diamond 400 may be a polishing portion 400b located at the top of the long axis. The diamond 400 may be divided into a main body portion 400a placed in the primary shaping layer 200 and the secondary shaping layer 300, and a polishing portion 400b protruding outward from the secondary shaping layer 300. In the present embodiment, an imaginary line connecting two vertices that are farthest from each other while facing each other among the plurality of vertices of the diamond 400 may be defined as an "axis", and the longest axis among the plurality of "axes" may be defined as a "long axis".

[0048] The polishing portion 400b of the diamond 400 may be located at the same height as the polishing portion 400b of another diamond 400 as much as possible. In the present embodiment, among the plurality of diamonds 400, the proportion of the diamonds 400 whose polishing portion 400b has a height difference within the range of 50 μm may be 80% or more of the total number of the diamonds 400, but the present disclosure is not limited thereto. Under optimal conditions, the proportion of the diamonds 400 whose polishing portion 400b has a height difference within the range of 50 μm may be close to 100% of the total number of the diamonds 400.

[0049] The diamond 400 may be positioned in the primary forming layer 200 and the secondary forming layer 300 in an upright posture extending downward from the top of the long axis. For example, the diamond 400 may be positioned in the primary forming layer 200 and the secondary forming layer 300 at a certain angle (e.g., an angle greater than 50° and less than 90°) relative to the handle base 100. When the diamond 400 stands upright relative to the handle base 100, the lower vertex of the long axis of the diamond 400 may be in point contact or line contact with the surface of the handle base 100, or may be spaced apart from the surface of the handle base 100 by a predetermined distance. When the long axis of the diamond 400 is close to 90° relative to the handle base 100, the diamond 400 is in point contact and line contact with the polishing pad, so that the polishing performance of the diamond 400 may be significantly improved.

[0050] Reference Figure 3In order to position the diamond 400 at an angle where its major axis is upright relative to the handle base 100, the composition of the secondary shaping layer 300 and the heat treatment conditions should be configured so that the contact angle θ at which the surface of the diamond 400 and the surface of the secondary shaping layer 300 meet is less than 90°, preferably less than 60°. The contact angle θ can be determined by the upward force F V , downward force F D and the lateral force F L The vertical component of is determined as shown in Equation 1 below.

[0051] (Equation 1)

[0052] F V =F D +F L ·cosθ

[0053] When the contact angle θ exceeds 90°, due to the lateral force F L The vertical component of the lateral force F is upward, the diamond 400 can receive a larger buoyancy and float further, and when the contact angle θ is less than 90°, the lateral force F L The direction of the vertical component of the contact angle θ may be changed to a lateral downward direction, so that the diamond 400 may receive a downward force. When the contact angle θ is greater than 90°, the diamond 400 may be separated from the handle base 100 due to buoyancy, which may cause the diamond 400 to shift its position, and the secondary shaping layer 300 may not properly support the diamond 400, which increases the risk of the diamond 400 falling off, and a debris pocket for discharging debris generated during polishing may not be formed in the bonding layer, thereby hindering proper debris discharge and significantly reducing polishing performance.

[0054] The diamonds 400 may finely polish the polishing pad P through the polishing portions 400b protruding from the secondary shaping layer 300. In this embodiment, since the polishing portions 400b of the plurality of diamonds 400 protrude from the secondary shaping layer 300 at uniform intervals and uniform heights, the polishing pad P may be effectively polished.

[0055] On the other hand, in the case of the conventional CMP conditioning disk 1, the polishing portions 1-3b protruding from the solder layer 1-2 in the body portion 1-3a are arranged in the solder layer 1-2 of the shank 1-1 at irregular intervals and uneven heights, so that durability and pad polishing characteristics (PCR: Pad Cutting Rate), etc. may be lower than those of the CMP conditioning disk 10 of the present disclosure. As a result of the test, it has been confirmed that the CMP conditioning disk 10 of the present disclosure provides an effect of extending the life by 30% or more than the conventional CMP conditioning disk 1.

[0056] Hereinafter, a method of manufacturing a CMP conditioning disk according to one embodiment of the present disclosure will be described.

[0057] Reference Figure 8 and 9 According to an embodiment of the present disclosure, the method 20 for manufacturing a CMP conditioning disk may include: a primary shaping layer forming step S100 and a secondary shaping layer forming step S200.

[0058] In the primary forming layer forming step S100, the primary forming layer 200 may be formed on the outer surface of the handle base 100, and the plurality of diamonds 400 may be fixed to the primary forming layer 200. In the primary forming layer forming step S100, the primary forming layer 200 may be formed by a fusion process. In the present embodiment, the primary forming layer forming step S100 includes a brazing process, but the present disclosure is not limited thereto, and the primary forming layer forming step S100 may also include a sintering process.

[0059] The primary shaping layer forming step S100 may include: a primary metal powder layer forming step S110 , an adhesive layer forming step S120 , and a primary diamond fixing step S130 .

[0060] In the primary metal powder layer forming step S110, the primary metal powder may be provided and brazed on the outer surface of the handle base 100. The primary metal powder layer 210 may be applied to the outer surface of the handle base 100 in a slurry form and pre-sintered. For example, in the brazing process of the primary metal powder layer 210, when the primary metal powder is applied to the outer surface of the handle base 100 in a powder form, the primary metal powder may be pre-sintered to form the primary metal powder layer 210.

[0061] In the primary metal powder layer forming step S110, the primary shaped layer 200 may be provided in a slurry form as the primary metal powder layer 210. When the primary metal powder layer 210 is brazed to a thin thickness during a brazing process for the primary metal powder layer 210, the primary metal powder layer 210 may shrink and fix the diamond 400 while minimizing the positional deviation of the diamond 400. The primary metal powder layer 210 may be pre-sintered at a temperature of 600° C. to 1000° C. In this case, the thickness of the primary metal powder layer 210 is hardly changed.

[0062] In the primary metal powder layer forming step S110, the thickness of the primary metal powder layer may be adjusted by polishing after pre-sintering the primary metal powder layer 210. When the thickness of the primary metal powder layer is reduced, when the diamond 400 is separated from the outer surface of the handle base 100, the lower portion of the diamond 400 may be positioned as close to the outer surface of the handle base 100 as possible.

[0063] In the adhesive layer forming step S120, an adhesive layer 220 may be formed on the outer surface of the primary metal powder layer 210. The adhesive layer 220 may be formed by applying (spraying) a slurry type adhesive onto the outer surface of the primary metal powder layer 210. In the primary diamond fixing step S130, a plurality of diamonds 400 may be fixed to the primary forming layer 200. For example, the plurality of diamonds 400 may be pressed into the pre-sintered layer of the primary metal powder layer 210 and fixed by the adhesive layer 220.

[0064] In the primary diamond fixing step S130, a plurality of diamonds 400 may be primarily fixed (temporarily fixed) in a regular pattern of rows and columns in an upright state in the primary forming layer 200. The orientation of the plurality of diamonds 400 may be controlled by a separate suction and pressure device. For example, the plurality of diamonds 400 may be arranged at an upright angle relative to the primary forming layer 200 by a suction and pressure device. The suction and pressure device temporarily holds the plurality of diamonds 400 in a regular pattern of rows and columns, presses the plurality of diamonds 400 onto the primary forming layer 200, and then releases the holding of the diamonds 400, thereby primarily fixing the plurality of diamonds 400 on the primary forming layer 200. If it is not necessary to control the orientation of the plurality of diamonds 400, an adhesive may be used to fix the plurality of diamonds 400 to the surface of the primary metal powder layer 210 or the pre-sintered layer. In this case, due to the thin thickness of the primary forming layer 200, the displacement of the position and orientation of the diamonds 400 may be minimized.

[0065] In the primary diamond fixing step S130, the plurality of diamonds 400 may be heat-treated while being fixed to the primary forming layer 200. In this case, the heat treatment temperature may be 1000° C. to 1300° C. The heat treatment temperature may be the same as or different from the heat treatment temperature of the secondary forming layer 300. In this case, the thickness of the primary forming layer 200 may be reduced by about 30% (the thickness of the primary forming layer after brazing).

[0066] In the state where the primary diamond fixing step S130 is completed, the diamond can be fixed in contact with or close to the handle base 100 with minimal displacement in position or orientation. Even though the density of the primary forming layer 200 is about twice that of diamond, since the thickness of the primary forming layer after heat treatment is less than half the size of the diamond, the position displacement of the diamond can be minimized.

[0067] In the secondary shaping layer forming step S200, the secondary shaping layer 300 may be formed on the outer surface of the primary shaping layer 200, and an environment may be provided for at least a portion of the diamond 400 exposed from the secondary shaping layer 300. In the secondary shaping layer forming step S200, the secondary shaping layer 300 may be formed by a brazing process. The secondary shaping layer forming step S200 may include: a secondary metal powder layer forming step S210, a polishing step S220, and a secondary diamond fixing step S230.

[0068] In the secondary metal powder layer forming step S210, the secondary formed layer 300 may be brazed by providing a secondary metal powder layer on the outer surface of the primary formed layer 200. During the brazing process of the secondary formed layer 300, when the secondary metal powder is applied to the outer surface of the primary formed layer 200, the secondary metal powder may be pre-sintered to form the secondary formed layer 300.

[0069] In the polishing step S220, the secondary shaping layer 300 is dry-polished so that at least a portion of the diamond 400 may be exposed from the secondary shaping layer 300. In this embodiment, the pressure for dry-polishing the secondary shaping layer 300 may be 0 psi to 3 psi, and the rotation speed for polishing may be 30 rpm to 130 rpm.

[0070] In the secondary diamond fixing step S230, a heat treatment process for shrinking the secondary shaping layer 300 for dry polishing may be provided. Finally, the plurality of diamonds 400 may be completely fixed in the secondary shaping layer 300 by the heat treatment process. The heat treatment temperature is 1000° C. to 1300° C. During the heat treatment process, the thickness of the secondary shaping layer 300 may be reduced so that the diamonds may protrude relatively. In a state where the primary diamond fixing step S130 of the primary shaping layer 200 is completed, the diamonds are fixed to be in contact with or close to the handle base 100, so that even if remelting occurs in some areas of the primary shaping layer 200, further shrinkage does not occur in the primary shaping layer 200, thereby suppressing positional deviation of the diamonds 400. As a result, even when the secondary shaping layer 300 is melted and shrinks in thickness due to brazing, deviation of the diamonds may be minimized.

[0071] As described above, in the present disclosure, the primary shaping layer is already in a contracted state through the primary shaping layer forming step and the secondary shaping layer forming step, and does not undergo a volume (thickness) change during the secondary heat treatment, thereby suppressing the displacement of diamond. In particular, by making the composition of the primary shaping layer and the secondary shaping layer different, if the viscosity is high even in a solid state, a liquid sintered state, or a 100% liquefied state during the secondary shaping process, the displacement of diamond can be more effectively suppressed.

Claims

1. A method for manufacturing a chemical mechanical polishing (CMP) conditioning disk, comprising: forming a primary shaping layer on an outer surface of the handle base; Arranging a plurality of diamonds on the primary shaping layer; forming a secondary shaping layer on an upper surface of the primary shaping layer; as well as At least a portion of the diamond is exposed in the secondary shaping layer.

2. The method according to claim 1, wherein: When forming the primary shaped layer, the primary shaped layer is formed by a brazing process or a sintering process; and When the secondary shaping layer is formed, the secondary shaping layer is formed by the brazing process.

3. The method according to claim 1, wherein: When forming the primary shaping layer, providing and pre-sintering a primary metal powder layer on the outer surface of the shank base, forming an adhesive layer on the outer surface of the primary metal powder layer, and The diamonds are temporarily fixed to the outer surface of the adhesive layer.

4. The method according to claim 3, wherein: When temporarily fixing the diamonds, the plurality of diamonds are fixed to the primary shaping layer in such a manner that the diamonds maintain an upright posture extending downward from the top of the long axis.

5. The method according to claim 4, wherein: In temporarily fixing the diamonds, the plurality of diamonds are temporarily held on a suction pressure device in a regular pattern of rows and columns, and the plurality of diamonds are pressed and fixed on the primary shaping layer using the suction pressure device to maintain an upright posture of the plurality of diamonds.

6. The method according to claim 1, wherein: When forming the secondary shaping layer, pre-sintering a secondary metal powder layer on the outer surface of the primary forming layer to form a secondary forming layer, and The secondary shaping layer is dry polished to cover all of the diamonds or to expose at least a portion of the diamonds.

7. The method according to claim 6, wherein: When forming the secondary shaping layer, The diamonds are completely fixed in the secondary shaping layer by the shrinkage of the dry-polished secondary shaping layer.

8. A CMP conditioning disk, comprising: handle base; a primary shaping layer formed on an outer surface of the handle base; a secondary shaping layer formed on an outer surface of the primary shaping layer; as well as A plurality of diamonds are arranged in the primary shaping layer and the secondary shaping layer, at least a portion of the diamonds are exposed from the secondary shaping layer.

9. The CMP conditioning disk according to claim 8, wherein: The plurality of diamonds are arranged in rows and columns to be spaced apart from each other in the outer surface of the secondary shaping layer, and are exposed to have the same exposure height as the outer surface of the secondary shaping layer.

10. The CMP conditioning disk according to claim 8, wherein: The primary shaping layer is formed at a melting point that is the same as that of the secondary shaping layer, a melting point that is lower than that of the secondary shaping layer, or a melting point that is higher than that of the secondary shaping layer.

11. The CMP conditioning disk according to claim 8, wherein: The thickness between the outer surface of the primary shaping layer and the outer surface of the secondary shaping layer is greater than the thickness between the outer surface of the primary shaping layer and the outer surface of the handle base.

12. A CMP conditioning disk manufactured by the method of any one of claims 1 to 7.

Images