Substrate support plate, apparatus including the same, and method of using the same

Abstract

A substrate support plate that provides improved process uniformity is disclosed. The substrate support plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. A portion of the peripheral portion may include an insulating layer. The central portion of the top surface may not include an insulating layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is a continuation-in-part of U.S. patent application No. 17 / 092,599, entitled “Substrate Supporting Plate, Thin Film Deposition Apparatus Including the Same, and Thin Film Deposition Method,” filed on November 9, 2020, which is a divisional of U.S. patent application No. 15 / 451,285, entitled “Substrate Supporting Plate, Thin Film Deposition Apparatus Including the Same, and Thin Film Deposition Method,” filed on March 6, 2017, which claims the benefit of Korean Patent Application No. 10-20160032079 filed in the Korean Intellectual Property Office on March 17, 2016, the disclosures of which are incorporated herein by reference in their entirety. Technical Field

[0003] One or more embodiments relate to substrate support plates, and more particularly, to substrate support plates, devices including substrate support plates, and methods of using substrate support plates and / or devices. Background Art

[0004] When depositing semiconductor thin films, among the various factors that determine the quality of the film, an important factor is the contamination of residual particles in the process.

[0005] For example, in a process with a fast switching cycle between source gas and reactive gas, such as an atomic layer deposition (ALD) process, a gas (e.g., source gas) that is not removed from the reactor may react with another gas (e.g., reactive gas) and may act as a contaminant in the reactor. The contaminant may penetrate into the device structure on the substrate, thereby causing failure of the semiconductor device.

[0006] In more detail, during the process, source gas or reactive gas may penetrate between the substrate and the susceptor on which the substrate is mounted. As a result, the gas may cause undesirable deposition on the rear surface of the substrate. In this case, the device formed on the substrate may be contaminated, and when the substrate is separated from the susceptor, the contamination particles in the reaction space may spread, and the reactor may also be contaminated.

[0007] Any discussion of problems and solutions presented in this section has been included in the present disclosure merely to provide context for the present disclosure and should not be construed as an admission that any or all of the discussion was known at the time the present invention was made. Summary of the invention

[0008] One or more embodiments include a substrate support plate that can prevent or mitigate source gas and / or reactive gas from reaching the rear surface of the substrate, an apparatus including the substrate support plate, and a method of using the substrate support plate. Examples of the present disclosure are described below in the context of a thin film deposition reactor. However, unless otherwise stated, the present invention is not limited to these applications. For example, in addition to deposition or as an alternative to deposition, the apparatus can be used for cleaning, processing, and / or etching.

[0009] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.

[0010] According to one or more embodiments, a substrate supporting plate includes: a substrate mounting portion; and a peripheral portion surrounding the substrate mounting portion, wherein an edge portion of a top surface of the substrate mounting portion is anodized and a central portion of the top surface of the substrate mounting portion is not anodized.

[0011] The substrate support plate may further include a substrate support pin hole. The substrate support pin hole may be formed at a central portion.

[0012] The substrate mounting portion may have a concave shape with respect to the peripheral portion.

[0013] The anodized edge portion may have a thickness from about 10 μm to about 100 μm.

[0014] The area of ​​the central portion may be smaller than the area of ​​the target substrate to be processed.

[0015] Due to the anodization, an insulating layer may be formed on the top surface of the edge portion. The insulating layer may include aluminum oxide.

[0016] At least a portion of the bottom surface opposite the top surface may be anodized.

[0017] According to one or more embodiments, a thin film deposition device includes: a reactor wall; a gas injection device; a gas channel; a gas flow control device; and a substrate support plate, wherein the gas injection device, the gas channel and the gas flow control device are stacked sequentially and arranged in the reactor wall, wherein the substrate support plate includes a top surface, a bottom surface and a side surface, and an insulating layer is formed on at least a portion of the top surface and at least a portion of the bottom surface of the substrate support plate.

[0018] An insulating layer may be further formed on a side surface of the substrate supporting plate.

[0019] The insulating layer may protrude from the top surface of the substrate support plate.

[0020] Gas supplied by the gas channel and the gas injection device may be injected onto the substrate on the substrate support plate, wherein at least a portion of the injected gas is exhausted through the gas flow control device. The substrate may be arranged to overlap the insulating layer.

[0021] The injected gas may penetrate into a space between the substrate and the substrate supporting plate to form a thin film on the rear surface of the substrate.

[0022] The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion, wherein the peripheral portion contacts the reactor wall to form a reactive space through a surface seal therebetween.

[0023] According to one or more embodiments, a thin film deposition method includes: mounting a target substrate to be processed on a substrate support plate; closely adhering the target substrate to the substrate support plate by using charges accumulated on the target substrate while depositing a first thin film on the target substrate; and unloading the target substrate.

[0024] The deposition of the first thin film may include: supplying a first gas; removing the remaining first gas by supplying a purge gas; supplying a second gas and plasma; and removing the remaining second gas by supplying the purge gas.

[0025] While depositing the first thin film, a second thin film may be formed on the rear surface of the target substrate. The width of the second thin film may be smaller than the width of the edge exclusion portion. For example, when the film is deposited on a 300 mm wafer, the width of the edge exclusion portion may be determined to be 3 mm.

[0026] According to another exemplary embodiment, a substrate support plate includes a top surface including a substrate mounting portion and a peripheral portion, and an insulating layer formed on the top surface. The substrate mounting portion may be recessed relative to the peripheral portion. The peripheral portion includes a first portion and a second portion, wherein the insulating layer is formed on the top surface of the second portion. According to examples of these embodiments, the second portion is radially outside the first portion. According to further examples of these embodiments, the top surface of the first portion is conductive. According to another aspect, the peripheral portion also includes a third portion. The inner diameter of the second portion may be substantially the same as the outer diameter of the gas supply device relative to the substrate support plate. The insulating layer may be or include a metal oxide, such as (e.g., anodized) aluminum oxide.

[0027] According to another embodiment, an apparatus includes a reactor wall, a gas supply device disposed in the reactor wall, and a substrate support plate, such as the substrate support plate described herein. A reaction space can be defined between the reactor wall, the substrate support plate, and the gas supply device. The apparatus can also include a gas flow control device adjacent to the gas supply device.

[0028] The content of the present invention is provided only as an example and should not be considered to limit the present disclosure in any way. Other embodiments are described below in conjunction with relevant drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] These and / or other aspects will become more apparent and more easily understood from the following description of the embodiments in conjunction with the accompanying drawings.

[0030] Figure 1 is a cross-sectional view of a semiconductor manufacturing apparatus according to an embodiment.

[0031] Figure 2 is a cross-sectional view showing the flow of reactive gas (and residual gas) in a semiconductor manufacturing apparatus according to an embodiment.

[0032] Figure 3 is a cross-sectional view of a semiconductor manufacturing apparatus according to another embodiment.

[0033] Figure 4 is a cross-sectional view of a substrate support plate according to the prior art.

[0034] Figure 5 is a cross-sectional view illustrating a situation in which a process gas penetrates into a rear surface of a target substrate to be processed when deposition is performed on a substrate supporting plate in a reaction space according to the related art.

[0035] Figure 6 and Figure 7 2 are a cross-sectional view and a plan view, respectively, of a substrate support plate according to an embodiment.

[0036] Figure 8 is a cross-sectional view of a substrate support plate according to other embodiments.

[0037] Fig. 9 and Fig.10 is a graph showing the thickness of a thin film deposited on the rear surface of a substrate when the substrate support plate is not anodized and when the edge of the substrate support plate is anodized.

[0038] Figures 11 to 15 is a cross-sectional view of a substrate support plate according to other embodiments.

[0039] Fig.16 is a cross-sectional view of an apparatus including a substrate support plate according to one or more additional embodiments of the present disclosure.

[0040] Fig.17 A top view of a substrate support plate according to a further example of the present disclosure is shown.

[0041] Fig.18 Shows the use of Fig.17Film thickness measurements of films deposited on the substrate support plate shown.

[0042] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0043] The present disclosure will now be described more fully below with reference to the accompanying drawings. However, the present disclosure can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided to make the present disclosure thorough and complete and to fully convey the scope of the present disclosure to those of ordinary skill in the art.

[0044] The terms used herein are only used for the purpose of describing the embodiments and are not intended to limit the embodiments of the present disclosure. As used herein, the singular forms "one", "an" and "the" are also intended to include plural forms, unless the context clearly indicates otherwise. It will also be understood that the terms "include", "comprise" and their variants are used here to specify the presence of stated features, integers, steps, operations, elements, parts and / or groups, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or their groups. As used herein, the term "and / or" includes any and all combinations of one or more related listed items.

[0045] It will be understood that although the terms "first," "second," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms. These terms do not refer to a particular order, vertical relationship, or preference, but are merely used to distinguish one component, region, or portion from another component, region, or portion. Thus, a first component, region, or portion described below may refer to a second component, region, or portion without departing from the teachings of the present disclosure.

[0046] As used herein, substantially or about the same means ±5%, ±2%, ±1% or ±0.5% of another value or shape (e.g., one or more cross-sectional dimensions of a shape). Percentages can be absolute or relative.

[0047] In the accompanying drawings, variations from the illustrated shapes are expected due to, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments should not be construed as limited to the specific shapes of the regions shown herein, but may include deviations in shapes caused by, for example, manufacturing. In addition, the accompanying drawings may be used to illustrate various features, which may not be drawn to scale.

[0048] Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

[0049] Now refer to Figure 1 A deposition apparatus according to an embodiment is explained. Figure 1 is a cross-sectional view of a semiconductor manufacturing apparatus 100 according to an embodiment. Figure 1 In the semiconductor manufacturing apparatus 100, the reactor wall 101 may contact the substrate support plate 103. In more detail, the bottom surface of the reactor wall 101 may contact the substrate support plate 103 serving as a lower electrode to form a reaction space 125 between the reactor wall 101 and the substrate support plate 103.

[0050] In other words, the substrate support plate 103 may be configured to contact the reactor wall 101 through a face seal, and due to the face seal, a reaction space 125 may be formed between the reactor wall 101 and the substrate support plate 103. In addition, due to the face seal, a gas exhaust path 117 may be formed between the reactor wall 101 and the gas flow control device 105 and between the reactor wall 101 and the gas supply device 109.

[0051] The gas flow control device 105 and the gas supply device 109 may be disposed between the reactor wall 101 and the substrate support plate 103. The gas flow control device 105 and the gas supply device 109 may be formed integrally with each other, or a portion having the gas injection hole 133 may be formed separately. In the latter case, the gas flow control device 105 may be stacked on the gas supply device 109. Alternatively, the gas supply device 109 may be separate, and in this case, the gas supply device 109 may include a gas injection device having a plurality of through holes and a gas channel stacked on the gas injection device (see Figure 3 ).

[0052] The airflow control device 105 may include a plate and a side wall 123 protruding from the plate. A plurality of through holes 111 passing through the side wall 123 may be formed in the side wall 123.

[0053] Grooves 127, 129, and 131 for accommodating sealing members such as O-rings may be formed between the reactor wall 101 and the gas flow control device 105 and between the gas flow control device 105 and the gas supply device 109. Due to the sealing members, external gas can be prevented from being introduced into the reaction space 125. In addition, due to the sealing members, the reactive gas in the reaction space 125 can be discharged along the normal path (i.e., the gas discharge path 117 and the gas outlet 115 (see FIG. 1 ). Figure 2 Therefore, it is possible to prevent the reactive gas from leaking to portions other than the normal path.

[0054] The gas supply device 109 may be used as an electrode in a plasma process, such as a capacitively coupled plasma (CCP) method. In this case, the gas supply device 109 may include a metal material, such as aluminum (Al). In the CCP method, the substrate support plate 103 may be used as an electrode, and thus capacitive coupling may be achieved by the gas supply device 109 used as a first electrode and the substrate support plate 103 used as a second electrode.

[0055] In more detail, an external plasma generator (e.g. Fig.16 The RF power generated by the generator 1610 shown in FIG. 1 can be transmitted through the RF (radio frequency) rod 313 (see FIG. Figure 3 ) is transmitted to the gas supply device 109. The RF rod 313 can be passed through the RF rod hole 303 (see FIG. 1 ) on the upper portion of the reactor wall 101 through the gas flow control device 105. Figure 3 ) is mechanically connected to the gas supply device 109.

[0056] Alternatively, the gas supply device 109 may be made of a conductor, and the gas flow control device 105 may be made of an insulating material, such as ceramic, so that the gas supply device 109 used as a plasma electrode may be insulated from the reactor wall 101 .

[0057] like Figure 1 As shown, a gas inlet 113 passing through a central portion of the reactor wall 101 and the gas flow control device 105 is formed at an upper portion of the reactor wall 101. In addition, a gas flow path 119 may be additionally formed in the gas supply device 109 so that a reactive gas supplied through the gas inlet 113 by an external gas supply unit (not shown) may be uniformly supplied to the gas injection holes 133 of the gas supply device 109.

[0058] In addition, if Figure 1 As shown, the gas outlet 115 is asymmetrically arranged at the upper end of the reactor wall 101 relative to the gas inlet 113. Figure 1 Although not shown in the figure, the gas outlet 115 may be symmetrical with the gas inlet 113. In addition, when the reactor wall 101 and the side wall of the gas flow control device 105 (and the side wall of the gas supply device 109) are spaced apart from each other, a gas exhaust path 117 may be formed in the space between the reactor wall 101 and the side wall of the gas flow control device 105 (and the side wall of the gas supply device 109), and residual gas of the reactive gas is exhausted through the gas exhaust path 117 after the process.

[0059] Figure 21 is a cross-sectional view showing the flow of reactive gas (and residual gas) in the semiconductor manufacturing apparatus 100 according to an embodiment. Arrows mark the direction of gas flow, and the reactive gas supplied through the gas inlet 113 by the external gas supply unit (not shown) can be uniformly supplied to the gas injection holes 133 formed in the shower head through the gas flow path 119.

[0060] A chemical reaction may be performed in the reaction space 125 or on the substrate 110 in the presence of a reactive gas to form a thin film on the substrate 110. Residual gas after forming a thin film (or performing other processes) may pass through a gas discharge path 117 formed between the reactor wall 101 and the side wall of the gas supply device 109, may pass through a through hole 111 formed in the side wall 123 of the gas flow control device 105, may be introduced into an internal space 126 of the gas flow control device 105, and may then be discharged to the outside through the gas outlet 115. The internal space 126 of the gas flow control device 105 may be defined as a space surrounded by the side wall 123 of the gas flow control device 105. The internal space 126 may be coupled to the gas outlet 115.

[0061] Figure 3 FIG. 1 is a cross-sectional view of a semiconductor manufacturing apparatus 100 according to another embodiment. Figure 3 The gas flow control device 105 includes a side wall 123, a gas inlet 113, a plate 301 surrounded by the side wall 123, an RF rod hole 303, a screw hole 305, a through hole 111, and a groove 127 for accommodating a sealing member such as an O-ring.

[0062] The plate 301 may be surrounded by the protruding sidewall 123 so that the plate 301 has a concave shape. A gas inlet 113 through which an external reactive gas is introduced is provided in a portion of the gas flow control device 105. At least two screw holes 305 are formed around the gas inlet 113, and screws as mechanical connection members for connecting the gas flow control device 105 and the gas supply device 109 pass through the screw holes 305. An RF rod hole 303 is formed in another portion of the gas flow control device 105 so that connection to an external plasma supply unit ( Figure 3 The RF rod 313 (not shown) is connected to the gas supply device 109 located below the airflow control device 105.

[0063] The gas supply device 109 connected to the RF rod 313 can be used as an electrode in a plasma process using the CCP method. In this case, the gas supplied by the gas channel and the gas injection device of the gas supply device 109 can be activated by the gas supply device 109 used as an electrode, and can be injected onto the substrate 110 on the substrate support plate 103.

[0064] Figure 4is a cross-sectional view of a substrate support plate P according to the prior art.

[0065] Reference Figure 4 , the substrate support plate P may include a peripheral portion A and a substrate mounting portion M, and the substrate support pin hole H may be formed in the substrate support plate P. The substrate mounting portion M may be recessed from the peripheral portion A. The inner side wall of the substrate mounting portion M may have an inclined shape (i.e., a concave shape) so that the substrate is accurately located in the recessed space.

[0066] Substrate support pin holes H through which substrate support pins enter may be formed in a substrate support plate P (eg, a susceptor) in order to load / unload a substrate. Figures 1 to 3 As shown, the peripheral portion A can contact the reactor wall 101 through a face seal (see Figure 1 ) to provide a surface for forming a reaction space.

[0067] Figure 5 is a cross-sectional view illustrating a situation in which a process gas penetrates into a rear surface of a target substrate when deposition is performed on a substrate supporting plate P in a reaction space according to the related art.

[0068] Reference Figure 5 , even when the target substrate S is mounted on a substrate support plate P (e.g., a susceptor) and is closely attached to the substrate support plate P, the process gas may penetrate into the edge portion of the rear surface of the target substrate S. In more detail, the source gas and / or the reactive gas may penetrate through the edge portion of the target substrate S to a depth of 10 mm to remain on the rear surface of the target substrate S. The residual gas remaining on the rear surface may serve as a contaminant in the reactor in addition to contaminating the device structure on the target substrate S in a subsequent process, thereby reducing the quality of the semiconductor device.

[0069] In the semiconductor manufacturing apparatus according to the embodiment, the above-mentioned problem is solved by anodizing a substrate support plate, such as a susceptor; in other words, by forming a thin oxide film on the metal surface.

[0070] In more detail, according to some embodiments, a portion of the substrate support plate that contacts the substrate is anodized so that the substrate support plate is closely attached to the substrate, and only a portion of the substrate support plate is anodized so that the substrate is easily separated after the process is completed. Only the edge portion of the substrate support plate that contacts the substrate may be anodized.

[0071] Thus, since the top surface of the substrate support plate is anodized, the adhesion between the substrate support plate and the substrate can be increased during the plasma process, thereby preventing the process gas from penetrating into the rear surface of the substrate during the process. In addition, since only a portion of the substrate support plate is anodized, the substrate can be easily separated after the process.

[0072] In more detail, in a plasma process, such as a plasma enhanced atomic layer deposition (PE-ALD) process, when the entire top surface of a substrate support plate is anodized, the substrate is attached to the substrate support plate due to the RF charge accumulated on the substrate. In this case, even after the plasma process ends, the substrate attached to the substrate support plate continues to be attached, making it difficult to unload the substrate. However, according to an embodiment, since a portion of the top surface of the substrate support plate (e.g., an edge of the substrate support plate that contacts the substrate) is anodized, the process gas can be prevented from penetrating into the rear surface of the substrate, and the substrate tightly attached to the substrate support plate due to electrostatic force can be more easily unloaded.

[0073] In an optional embodiment, since the edge of the substrate support plate contacting the substrate is anodized, an insulating layer (e.g., an insulating layer made of anodized aluminum oxide) having a ring shape (e.g., a quadrilateral ring shape or a circular ring shape) may be formed on the substrate support plate. The width of the insulating layer formed on the substrate support plate may be determined experimentally.

[0074] Figure 6 and Figure 7 1 and 2 are a cross-sectional view and a plan view, respectively, of a substrate supporting plate P according to an embodiment.

[0075] Reference Figure 6 and Figure 7 , the substrate supporting plate P may include a substrate mounting portion M and a peripheral portion A surrounding the substrate mounting portion M, and the substrate mounting portion M may have a concave shape relative to the peripheral portion A, as described above.

[0076] A portion of the edge portion E of the top surface of the substrate mounting portion M (e.g., a portion excluding or including the inclined sidewall of the edge portion E) may be anodized, and a central portion C of the top surface may not be anodized. In order to position the target substrate S so that the target substrate S overlaps the anodized portion, the area of ​​the central portion C may be smaller than that of the target substrate S. Figure 6 As shown, the peripheral portion A may not be anodized, or at least a portion of the peripheral portion A may be anodized (see Figure 8 , 12 , 14 and 15).

[0077] When the edge portion E is anodized, the insulating layer D may be formed on the top surface of the edge portion E. When the target substrate S has a circular shape, such as a wafer, the insulating layer D may be formed to have a circular ring shape. On the contrary, when the target substrate S has a quadrilateral shape, such as a display panel, the insulating layer D may be formed to have a quadrilateral ring shape. That is, the insulating layer D formed by anodization may be formed to have a ring shape consistent with the shape of the target substrate S.

[0078] In one embodiment, the substrate support plate P may include a metal, and the insulating layer (e.g., a metal oxide layer) may be formed by anodizing the metal. For example, the substrate support plate P may include aluminum, and the aluminum oxide layer may be formed by anodizing. The thickness of the aluminum oxide layer may range from about 10 μm to about 100 μm, for example, from about 15 μm to about 45 μm.

[0079] According to an embodiment, a portion (e.g., an edge) of the substrate support plate P, such as a susceptor contacting the target substrate S, is anodized, and the target substrate S is disposed to overlap the insulating layer D formed due to the anodization. Therefore, the target substrate S and the substrate support plate P can be closely attached to each other, so that the process gas can be prevented from penetrating therebetween during the plasma process, and problems such as reactor contamination, device yield reduction, and contamination in subsequent processing due to deposition on the rear surface of the target substrate S can be avoided. In addition, since the substrate support plate P is partially anodized and the target substrate S overlaps the insulating layer D formed due to the anodization, the target substrate S can be easily unloaded after the process.

[0080] Figure 8 is a cross-sectional view of a substrate support plate P according to other embodiments.

[0081] Reference Figure 8 The substrate support plate P may include a top surface, a bottom surface, and a side surface, and the insulating layer D may be formed on at least a portion of the top surface, the bottom surface, and the side surface of the substrate support plate P. The insulating layer D may be formed by anodization.

[0082] In order to form Figure 8 In the embodiment of the present invention, the target substrate S and the substrate support plate P are provided with an insulating layer D, and then a portion of the insulating layer D may be removed. For example, a mechanical removal process may be performed on a portion (not shown) formed on the central portion C among portions of the insulating layer D formed on the top surface of the substrate mounting portion M of the substrate support plate P to expose the metal surface of the substrate support plate P. As a result, the insulating layer D may have a stepped shape protruding from the exposed top surface of the substrate support plate P. Due to the stepped shape, the target substrate S and the substrate support plate P may be more closely attached to each other.

[0083] By using Figures 6 to 8 The method for depositing a thin film on a substrate support plate P may include the following steps.

[0084] - First step: The target substrate S is mounted on the substrate support plate P. As described above, the insulating layer D formed by anodization is formed on the substrate support plate P to partially overlap the target substrate S, so that the target substrate S overlaps the insulating layer D.

[0085] - Second step: By using the charges accumulated on the target substrate S, the target substrate S is closely attached to the substrate support plate P. Due to the electrostatic force between the target substrate S and the substrate support plate P, including the insulating layer D (particularly, the electrostatic force generated at a position where the target substrate S and the insulating layer D overlap each other), the target substrate S can be closely attached to the substrate support plate P. In this step, during the deposition process of the target substrate S, charges are accumulated.

[0086] - Third step: depositing a first thin film on the target substrate S. The first thin film may be deposited by using a PEALD process. For example, the first thin film may be deposited by supplying a first gas, removing the residual first gas by supplying a purge gas, supplying a second gas and plasma, and removing the residual second gas by supplying a purge gas. In an optional embodiment, the first gas or the second gas may be a reactive purge gas. Optionally, the second step may be performed during the third step.

[0087] In this embodiment, the second step and the third step may be performed (substantially) simultaneously so that the target substrate S may be tightly attached to the substrate support plate P. During the plasma deposition process, the target substrate S may be charged (i.e., charge may be accumulated in the target substrate S). This results in polarization of the anodized insulating layers D, D' of the substrate support plate P. Due to the polarization, an electrostatic force may be generated between the target substrate S and the substrate support plate P. The electrostatic force results in tight adhesion between the target substrate S and the substrate support plate P.

[0088] - Fourth step: Repeat the second step and / or the third step until a thin film having a predetermined thickness is formed.

[0089] - Fifth step: unloading the target substrate S on which the thin film is completely deposited.

[0090] A thin film may be deposited on the target substrate S by performing the first to fifth steps. During the third step of depositing the first thin film, a second thin film may be formed on the rear surface of the target substrate S. Since the second thin film contaminates the device formed on the target substrate S, diffuses the contamination particles in the reaction space when the target substrate S is unloaded, and thus contaminates the reactor (and equipment in subsequent processes), the second thin film must be formed as small as possible. In order to make the second thin film as small as possible, the second thin film must be formed considering the edge exclusion portion as the permeation allowance range. In other words, the width of the second thin film may be smaller than the width of the edge exclusion portion.

[0091] Fig. 9 and Fig.10 is a graph showing experimental data illustrating that when the substrate support plate is not anodized ( Fig. 9 ) and when the edge of the substrate support plate is anodized ( Fig.10) is the thickness of the film deposited on the back surface of the substrate. Fig. 9 and Fig.10 In FIG. 1 , the vertical axis represents the thickness of the thin film deposited on the rear surface of the substrate, and the horizontal axis represents the distance (mm) from the center to the edge of the rear surface of the substrate. Fig. 9 and Fig.10 In the figure, a substrate with a diameter of 300 mm is used, and the horizontal axis represents 150 mm from the center of the rear surface of the substrate. That is, the leftmost end from the center of the target substrate is -150 mm, and the rightmost end from the center of the target substrate is +150 mm. In addition, the experiment was performed in a multi-chamber including four reactors, and each line shows the measurement results of each of the four reactors.

[0092] refer to Fig. 9 , shows the thickness of the film deposited on the rear surface of the substrate, where the substrate support plate is not anodized, the penetration reaches a lateral depth of 15 mm, and the film is formed on the rear surface of the substrate. Fig.10 , shows the thickness of the film deposited on the rear surface of the substrate when the edge of the substrate support plate contacting the substrate is anodized to a width of 40 mm, penetrating to a lateral depth of 3 mm from the rear surface of the substrate. The lateral depth of 3 mm is within the 3 mm range of the edge exclusion portion as the penetration allowable range, so there is no problem. In addition, since only the edge of the substrate support plate is anodized, after the process, the force of the substrate support pins to lift the target substrate S from the substrate support plate may be greater than the adhesion between the target substrate S and the substrate support plate, making it easy to unload the target substrate S.

[0093] Figures 11 to 15 is a cross-sectional view of a substrate support plate P according to other embodiments.

[0094] refer to Fig.11 , the substrate support plate P may include an insulating layer D' obtained by anodizing at least a portion of a bottom surface opposite to the top surface. Since the insulating layer D' is formed on the bottom surface, adhesion between the substrate support plate P including the insulating layer D' and the target substrate S may be increased. Fig.11 The entire bottom surface of the substrate support plate P is anodized, but only a portion of the bottom surface may be anodized. Fig.11 The side surface of the substrate support plate P is not anodized, but in an alternative embodiment, the side surface of the substrate support plate P may also be anodized.

[0095] Reference Fig.12 , the insulating layer D formed by anodization may be formed on the peripheral portion A and the substrate mounting portion M of the substrate support plate P. Similarly, as Fig.13As shown, the substrate mounting portion M of the substrate supporting plate P may be flat, like the peripheral portion A, and the substrate supporting pin holes H may be formed in the central portion C of the substrate mounting portion M. In an alternative embodiment, the substrate supporting pin holes H may be formed in the edge portion E of the substrate mounting portion M, or may be formed in the peripheral portion A.

[0096] Reference Fig.14 , the protruding sidewall of the insulating layer D of the substrate support plate may have a circular profile R. When a mechanical removal method of mechanically removing a portion of the insulating layer D after the insulating layer D is formed is changed to a chemical removal method (e.g., a method using wet etching), the circular profile R may be formed. Since the insulating layer D protruded by wet etching has a circular profile, adhesion between the substrate support plate P including the insulating layer D and the target substrate S may increase.

[0097] refer to Fig.15 , the top surface of the insulating layer D of the substrate support plate P may be formed at substantially the same level as the top surface of the exposed metal layer of the substrate support plate P. Such a structure may be formed by performing the following steps to form the substrate support plate P, instead of the above-described process of mechanically removing a portion of the insulating layer D after the insulating layer D is formed.

[0098] - First step: A mask is formed on the central portion C of the substrate mounting portion M of the substrate supporting plate P.

[0099] - Second step: the substrate support plate P on which the mask is formed is subjected to surface treatment to form an insulating layer D (ie, the insulating layer D extends to a predetermined depth in a portion of the substrate support plate P on which the mask is not formed).

[0100] —Third step: removing the mask.

[0101] That is, the substrate support plate P may be formed by optionally performing surface treatment using a mask, instead of the above process of mechanically removing a portion of the insulating layer D. In an alternative embodiment, the metal of the substrate support plate P may become an insulating material with an increased volume due to the surface treatment, and in this case, the top surface of the insulating layer D may be higher than the top surface of the exposed metal layer of the substrate support plate P.

[0102] Fig.16Another device 1600 according to a further embodiment of the present disclosure is shown. Device 1600 can be similar to the above-described device 100, except that device 1600 includes a substrate support plate 1606, as described below. As shown, device 1600 includes a reactor wall 1602 (which can be the same or similar to reactor wall 101), a gas supply device 1604 (which can be the same or similar to gas supply device 109), and substrate support plate 1606. Device 1600 can also include a gas flow control device 1608 (which can be the same or similar to gas flow control device 105). As described above, reaction space 1609 can be defined between reactor wall 1602, substrate support plate 1606, and gas supply device 1604. As described above, gas flow control device 1608 can be adjacent to gas supply device 1604. As described above, gas supply device 1604 and gas flow control device 1608 can be separate or integrally formed. In addition, as described above, the gas supplied by the gas supply device 1604 may be injected onto or toward the substrate support plate 1606, wherein at least a portion of the injected gas is discharged to the outside through the gas flow control device 1608. In addition, the gas supply device 1604 and the substrate support plate 1606 may be electrodes for plasma formation, wherein at least one of the gas supply device 1604 and the substrate support plate 1606 is connected to the RF power supply 1610, and the other is grounded. As a specific example, referring to Figure 2 and Fig.16 The airflow control device 1608 includes: Figure 2 The interior space shown is coupled to a gas outlet, such as gas outlet 115. Various other features of the device 1600 can be configured in combination with the above Figure 1-3 The corresponding features described are the same or similar. The substrate S may also be the same or similar to the substrate S described above.

[0103] Fig.17 A top view and a partial cross-sectional view of a substrate support plate 1606 are shown. The substrate support plate 1606 can be similar to the substrate support plate P described above, except that the substrate support plate 1606 includes a differently configured insulating layer 1612, compared to the insulating layer D. As described in more detail below, the insulating layer 1612 of the substrate support plate 1606 is configured to expand the bulk plasma region 1614 by reducing the area and / or by placing the insulating layer 1612. In this case, the sheath region 1616 is moved away from the substrate S. This design can reduce the undesirable effects of the sheath region 1616 on the edge portion of the substrate S during processing. Without such an insulating layer, non-uniformities (e.g., thickness and / or properties of the deposited material) may be very high, and / or asymmetric deposition or other processing may occur on the surface of the substrate S. Various designs of the substrate support plate 1606 can be combined with the features of the substrate support plates described above.

[0104] In the illustrated example, the substrate support plate 1606 includes a top surface 1622, a bottom surface 1624, and a sidewall 1626 spanning between the top surface 1622 and the bottom surface 1624. The top surface 1622 includes a substrate mounting portion 1628 and a peripheral portion 1630. The substrate mounting portion 1628 may be combined with the above Figure 4-8 The substrate mounting portion 1628 may be the same or similar to the substrate mounting portion 24 described above. For example, the substrate mounting portion 1628 may be recessed relative to the peripheral portion 1630. The substrate mounting portion 1628 may be demarcated relative to the peripheral portion 1630 by the wall 1620. The height (H1) of the wall 1620 may be about 0.6 mm to about 10.0 mm or about 0.75 mm to about 0.85 mm.

[0105] The substrate support plate 1606 also includes an insulating layer 1612 formed on the top surface 1622. More specifically, the insulating layer 1612 can be formed on a portion of the peripheral portion 1630. For example, the peripheral portion 1630 may include a first portion 1632 and a second portion 1634. The first portion 1632 and the second portion 1634 may be substantially annular ring-shaped. The second portion 1634 is radially outside the first portion 1632. The insulating layer 1612 may be formed on the top surface of the second portion 1634. According to an example of an illustrative embodiment, the top surface of the first portion 1632 is conductive. For example, the first portion 1632 may be or include a metal, such as aluminum or stainless steel, such as SUS 304. In this case, the insulating material 1612 may be or include a metal oxide containing a metal—for example, (anodized) aluminum oxide. The insulating material 1612 can be formed using the techniques described herein. The thickness of the insulating layer 1612 may be, for example, between about 10 μm and about 100 μm. As described above in conjunction with Fig.14 As described above, the edge 1640 of the insulating layer 1612 may have a rounded profile.

[0106] In the illustrative example, the peripheral portion 1630 also includes a third portion 1636. The third portion 1636 may also be substantially annular. Additionally or alternatively, the third portion 1636 may be radially outside the second portion 1634. According to aspects of these examples, the height H2 of the third portion 1636 is less than the height H3 of the second portion 1634. The height H4 of the substrate mounting portion 1628 may be less than H3 and / or greater than H2. As a specific example, H2 may be about 7.0 mm to about 8.0 mm, H3 may be about 10.0 mm to about 11.0 mm, and / or H4 may be about 9.0 mm to about 10.0 mm.

[0107] To obtain the desired bulk plasma region 1614, the length L and / or the corresponding area of ​​the non-insulating surface (including the substrate mounting portion 1628 and the first portion 1632) can be substantially the same as the length (e.g., diameter D1) or corresponding area of ​​the electrode region of the gas supply 1604. Additionally or alternatively, the inner diameter (or other cross-sectional dimension, which can be substantially L) of the second portion 1634 can be substantially the same as the outer diameter D1 of the gas supply 1604, which is opposite the substrate support plate 1606.

[0108] According to a further example of the present disclosure, the outer diameter D2 of the second portion 1634 is substantially the same as the inner diameter of the inner surface 1638 of the reactor wall 1602 .

[0109] During use, the substrate support plate 1606 may expand, and the gap d between the substrate S and the wall 1620 may vary or change due to the thermal expansion of the substrate support plate 1606. In addition, the substrate S may slide or move within the substrate mounting portion 1628. Therefore, a mismatch between the substrate region and the bulk plasma region may occur within the substrate mounting portion 1628, resulting in deterioration of film quality such as film uniformity and wet etching rate at an edge position of the substrate S. Therefore, by further (e.g., radially) moving the insulating layer 1612 outward, the bulk plasma region 1614 is expanded and covers the entire substrate region, regardless of the sliding of the substrate within the substrate mounting portion 1628, and the non-uniformity of the process (particularly at the outer region of the substrate S) is reduced.

[0110] In addition to using the substrate support plate 1606, the method of using the device can be combined with Figure 6-8 In Fig.16 and 17 In the case shown, the substrate S does not overlap the insulating layer 1612. Otherwise, the method may be similar.

[0111] Fig.18 The use of a substrate support plate (e.g. Figure 4 Comparison of the thickness measurement of the deposited film using the substrate support plate (conventional) and the thickness measurement of the deposited film using the substrate support plate 1606 (new). As shown in the figure, from the center of the substrate with a diameter of 300 mm, in particular Fig.18 As shown in positions A and B, the thickness range or difference between the 130 mm and 150 mm regions is reduced. Thus, the substrate support plate 1606 can be used to reduce non-uniformity in processes such as plasma enhanced deposition processes.

[0112] For a better understanding of the present disclosure, the embodiments should not be construed as limited to the particular shapes of parts shown herein but may include deviations in shapes.

[0113] Although one or more embodiments have been described with reference to the drawings, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the disclosure as defined by the following claims.

Claims

1. A substrate support plate, comprising: a top surface including a substrate mounting portion and a peripheral portion; bottom surface; a sidewall spanning between the top surface and the bottom surface; as well as forming an insulating layer on the top surface, wherein the substrate mounting portion is recessed relative to the peripheral portion, wherein the peripheral portion includes a first portion and a second portion, and Wherein, an insulating layer is formed on a top surface of the second portion.

2. The substrate support plate according to claim 1, wherein The top surface of the first portion is conductive.

3. The substrate support plate according to claim 1, wherein: The second portion is radially outward of the first portion.

4. The substrate support plate according to claim 1, wherein: The second portion is substantially in the shape of an annular ring.

5. The substrate support plate according to claim 1, wherein The peripheral portion also includes a third portion.

6. The substrate support plate according to claim 5, wherein: The third portion is radially outward of the second portion.

7. The substrate support plate according to claim 6, wherein: The height of the third portion is smaller than the height of the second portion.

8. The substrate support plate according to claim 1, wherein: The inner diameter of the second portion is substantially the same as the outer diameter of the gas supply device opposite to the substrate support plate.

9. The substrate support plate according to claim 1, wherein: The outer diameter of the second portion is substantially the same as the inner diameter of the inner surface of the reactor wall.

10. The substrate support plate according to claim 1, in, The first portion comprises metal, and Wherein, the second part includes a metal oxide containing a metal.

11. The substrate support plate according to claim 1, wherein: The insulating layer has a thickness between about 10 μm and about 100 μm.

12. The substrate support plate according to claim 1, wherein: The insulating layer includes aluminum oxide.

13. The substrate support plate according to claim 1, wherein: The edge of the insulating layer includes a rounded profile.

14. A device comprising: Reactor wall; A gas supply device disposed in the reactor wall; as well as The substrate support plate according to claim 1, Therein, the reaction space is defined between the reactor wall, the substrate support plate and the gas supply device.

15. The apparatus of claim 14, further comprising a gas flow control device adjacent to the gas supply device.

16. The device according to claim 15, wherein: The gas supplied by the gas supply device is injected onto or toward the substrate support plate, and wherein at least a portion of the injected gas is discharged to the outside through the gas flow control device.

17. The apparatus according to claim 15, wherein: The gas flow control device includes an interior space coupled to a gas outlet.

18. The apparatus of claim 14, wherein: The inner diameter of the second portion is substantially the same as the outer diameter of the gas supply device.

19. The apparatus of claim 14, wherein: The outer diameter of the second portion is substantially the same as the inner diameter of the inner surface of the reactor wall.

20. The apparatus of claim 14, wherein: The insulating layer includes anodized aluminum.

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