A method for preparing electrodes under temperature field for TEM in-situ experimental chip

Abstract

The present invention provides a method for preparing an electrode under a temperature field for an in-situ experimental chip of a transmission electron microscope, comprising: step S1, obtaining an initial functional chip, exposing a core working unit of the initial functional chip, and depositing a hard mask at least directly above the core working unit; step S2, preparing a micro-thin sheet based on the cross-sectional area of ​​the core working unit of the deposited hard mask, and transferring the micro-thin sheet to a preset processing unit, and etching the micro-thin sheet; step S3, preparing a deposition electrode, and performing an electrical circuit connection through the deposition electrode; step S4, cooling the etched micro-thin sheet, and depositing a protective layer around the etched micro-thin sheet to complete the preparation. The preparation method provided by the present invention can ensure the electrical performance of the electrode connection and avoid chip damage.

Description

Technical Field

[0001] The invention belongs to the field of chip preparation, and in particular relates to a method for preparing an electrode under a temperature field applied to a TEM in-situ experimental chip. Background Art

[0002] Introducing an in-situ electric field in a transmission electron microscope (TEM) can characterize the structural changes inside the chip unit while driving the chip to work normally. This is an important development direction of transmission electron microscopy technology in recent years. The intuitive analysis of the chip working mechanism is expected to greatly shorten the chip R&D cycle. At present, the manufacturing process of integrated circuit chips usually undergoes complex advanced semiconductor processes. After the chip is prepared, the key core dielectric materials are often wrapped and protected by layers of surrounding dielectric layers, electrode layers, etc., which can effectively support the stable and normal operation of the core dielectric materials. However, when it is necessary to study the working characteristics of the chip under the action of the electric field and establish the intrinsic relationship between the macroscopic electrical performance and the microstructural characteristics, it is impossible to directly carry out in-situ electrical experiments on the actual integrated circuit chip in TEM. It is necessary to use the focused ion beam (FIB) technology to cut the chip, extract the device unit area to be observed, and further process it into a nano-thin sheet for TEM observation (the thickness of the core functional layer is less than 100 nm). The electrical pins of the nano-thin sheet are connected to the input and output of the electrical test system through a custom electrode pattern, and the surface damage layer of the device is removed under low voltage, and finally the processing and transfer process of the circuit chip is completed.

[0003] There are usually two deposition modes when depositing micro-area electrodes in FIB, one is electron beam (E-beam) mode deposition, and the other is ion beam (I-beam) mode deposition. The principle of electrode deposition is to use electron beam or ion beam as an energy source to interact with the precursor gas, inducing the precursor gas to undergo a chemical reaction to complete the deposition process. The precursor gas used in the deposition process is usually an organic metal gas. For example, when depositing a Pt electrode, the precursor used is (CH 3 ) 3 (CH 3 C 5 H 4)Pt. Due to the energy limitation of the electron beam / ion beam, the auxiliary gas cannot be completely decomposed during the deposition of the Pt electrode, resulting in a certain amount of carbon-containing organic matter inside the Pt electrode. When the ion beam is used as the energy source, due to the high energy of the ion beam, the content of carbon-containing organic matter inside the electrode is relatively small, and the conductivity of the metal electrode is good. However, Ga ions will be injected into the sample surface during ion beam deposition. These additionally injected high-energy Ga ions may cause changes in the physical and chemical properties of the device surface layer material, such as crystallization or amorphization of the material; in addition, when the chip size is only nanometers, the deposited micro-area electrode is extremely close to the working area. The Ga ion precipitation phenomenon that may occur inside the electrode during the power-on process will affect the microscopic characterization of the working area, easily causing misjudgment of the device working characteristics, and is not conducive to in-depth analysis of the microscopic working mechanism of nano-sized circuit chips.

[0004] When an electron beam is used as an energy source, no additional Ga ions are introduced, and since the electron beam energy is not high, the damage introduced during the electrode deposition process is very small. In addition, the interaction between the electron beam and the gas molecules is relatively mild, and can be used to deposit a finer electrode structure. Therefore, electron beam deposition of micro-area electrodes is suitable for connecting nano-sized semiconductor integrated circuit chips to TEM in-situ electrical testing. However, the reaction efficiency is not high when the electron beam is deposited on the electrode, and the carbon-containing organic matter inside the electrode is high, which makes the conductivity of the contact resistance poor, which may cause distortion of the electrical signal and is not conducive to obtaining the true electrical state of the device during the TEM in-situ electrical experiment.

[0005] Based on the above, this application provides a technical solution to solve the above technical problems. Summary of the invention

[0006] In view of the problems in the prior art that the electrical circuit contact resistance is large when performing in-situ electrical experiments under TEM, which is not conducive to completing the normal functions of electrical tests, the present invention provides a method for preparing electrodes under a temperature field for TEM in-situ experimental chips, comprising the following steps:

[0007] Step S1, obtaining an initial function chip, exposing a core working unit of the initial function chip, and depositing a hard mask at least directly above the core working unit, wherein the core working unit of the initial function chip includes at least a first electrode;

[0008] Step S2, preparing a micro-thin sheet based on the cross-sectional area of ​​the core working unit of the deposited hard mask, and transferring the micro-thin sheet to a preset processing unit; the preset processing unit includes an electrically heated electrode area and an electrically connected electrode area, the micro-thin sheet is located directly above the electrically heated electrode area, and the micro-thin sheet is etched to expose the core working unit of the micro-thin sheet and the nanoscale first electrode;

[0009] Step S3, the electrically heated electrode region is provided with a patterned electrically heated electrode, the electrically heated electrode is used to provide a temperature field to heat the etched micro-thin slice, so as to form a deposition electrode above the electrically heated electrode region; the electrically connected electrode region is provided with an electrically connected electrode, the electrically connected electrode corresponds to the pin position of the nanoscale first electrode of the etched micro-thin slice, and is electrically connected through the deposition electrode;

[0010] Step S4, cooling the etched micro-slice, and depositing a protective layer around the etched micro-slice to complete the preparation; wherein,

[0011] The core working unit of the initial function chip may be configured in the form of any one of a storage unit, a switch unit, and a computing unit.

[0012] In a specific embodiment of the present invention, step S2 includes:

[0013] Step S2.1, based on a focused ion beam mask deposition method, preparing a cross-sectional area of ​​the core working unit where the hard mask is deposited into a micro-thin slice;

[0014] Step S2.2, taking out the micro-sheet and fixing it at the needle tip, the needle tip is used for welding;

[0015] Step S2.3, transferring the micro-thin slice at the needle tip to the area directly above the powered heating electrode of the in-situ experimental chip as a preset processing unit;

[0016] Step S2.4, etching to reduce the thickness of the micro-slice, so that at least the core working unit and the nanoscale first electrode of the micro-slice are exposed after etching.

[0017] In a specific embodiment of the present invention, the needle tip in step S2.2 is made of tungsten.

[0018] In a specific embodiment of the present invention, step S3 includes:

[0019] The long strip deposition electrode is prepared by electron beam electrode deposition mode in a heating environment. The deposition electrode is prepared by platinum or tungsten. The position, number of pins and position of the energized electrode are matched with the nanoscale first electrode of the etched micro-sheet.

[0020] In a specific embodiment of the present invention, the powered heating electrode provides a temperature field through a resistance feedback electrode heater, so that the temperature of the powered heating electrode area maintains a uniform temperature field, and the heating temperature does not exceed 1100°C.

[0021] In a specific embodiment of the present invention, step S4 further includes:

[0022] Step S4.1, stopping heating of the energized heating electrode region of the in-situ experimental chip, and at least allowing the etched micro-chip to cool to room temperature;

[0023] Step S4.2, using a 2KV, 39PA low-energy electron beam to reduce the thickness of the core working unit;

[0024] Step S4.3, depositing silicon oxide around the etched micro-thin slice to prepare a protective layer so as to be covered by the protective layer;

[0025] Step S4.4, complete the preparation.

[0026] In a specific embodiment of the present invention, in step S4.2, the thickness of the core working unit is thinned to 10 nm to 100 nm.

[0027] In a specific embodiment of the present invention, the hard mask has a thickness of 5 nm to 2000 nm, the hard mask is rectangular, the micro-thin sheet is a nano-scale thin sheet, and the pin size of the nano-scale first electrode is nano-scale.

[0028] In a specific embodiment of the present invention, the thickness of the deposited electrode is 5nm~100nm, and the width of the deposited electrode is 20nm~2um.

[0029] In a specific embodiment of the present invention, the protective layer has a thickness of 5 nm to 50 nm.

[0030] The present invention can bring at least one of the following beneficial effects: the present invention provides a method for preparing an electrode under a temperature field for a TEM in-situ experimental chip, comprising depositing a hard mask directly above a core working unit of an initial functional chip, wherein the core working unit comprises at least a first electrode layer; preparing a micro-thin sheet and transferring the micro-thin sheet to a preset processing unit, wherein the preset processing unit is an in-situ experimental chip; an energized heating electrode is used to provide a stable temperature field, and a deposition electrode is deposited in a heating environment, so that the deposition electrode is connected to the nanoscale first electrode of the etched micro-thin sheet and the energized connection electrode preset in the in-situ experimental chip to build a complete chip electrical circuit, and the prepared deposition electrode together with the etched micro-thin sheet can be used to complete the TEM in-situ experiment;

[0031] The energized connecting electrode corresponds to the position, pin, and pin position of the nanoscale first electrode; the etched micro-thin slice is cooled, and a protective layer is deposited around the etched micro-thin slice to complete the preparation of a chip product with a deposited electrode. In the preparation method provided by the present invention, the core working unit in the actual integrated circuit chip is first transferred to the energized in-situ experimental chip, and then the electrode is deposited under high temperature conditions. The high temperature environment can effectively promote the decomposition of organic matter in the precursor gas, reduce the organic matter inside the electrode, and avoid affecting the electrical properties of the prepared chip product electrode. The prepared chip product electrode connection has better conductive performance and can be more widely used in TEM in-situ electrical characterization; and the heating area is determined according to the area of ​​the electrode to be prepared, which can achieve local precision heating and maintain a uniform and stable temperature field, effectively avoiding failure or even damage of other non-welding areas due to high temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The preferred implementation scheme will be described below in a clear and understandable manner with reference to the accompanying drawings to further illustrate the above-mentioned characteristics, technical features, advantages and their implementation methods.

[0033] Figure 1 Schematic diagram of steps S1 to S4 of the method for preparing an electrode under a temperature field applied to a TEM in-situ experimental chip in an embodiment of the present invention;

[0034] Figure 2 It is a schematic diagram of the temperature-resistance curve of the platinum electrode;

[0035] Figure 3 Schematic diagram of the state of the electrode preparation method under the temperature field applied to the TEM in-situ experimental chip according to the embodiment of the present invention. DETAILED DESCRIPTION

[0036] Various aspects of the present invention are described in further detail below.

[0037] Unless otherwise defined or indicated, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein can be applied to the present invention.

[0038] The following is an explanation of the terms.

[0039] Unless otherwise clearly specified and limited, the "or" mentioned in the present invention includes the relationship of "and". The "and" is equivalent to the Boolean logic operator "AND", the "or" is equivalent to the Boolean logic operator "OR", and "AND" is a subset of "OR".

[0040] It is to be understood that although the terms "first", "second", etc. may be used herein to describe different elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Therefore, the first element may be referred to as the second element without departing from the teachings of the present invention.

[0041] In the present invention, the terms "comprising", "including" or "comprising" indicate that various components can be applied together in the mixture or composition of the present invention. Therefore, the term "consisting mainly of..." is included in the terms "comprising", "including" or "comprising".

[0042] Unless otherwise clearly specified and limited, the terms "connected", "connected" and "connection" in the present invention should be understood in a broad sense, for example, it can be a fixed connection, or it can be connected through an intermediary medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0043] For example, if an element (or component) is referred to as being on, coupled to, or connected to another element, the element may be directly formed on, coupled to, or connected to the other element, or there may be one or more intervening elements between them. In contrast, if the expressions "directly on," "directly coupled to," and "directly connected to" are used herein, then no intervening elements are indicated. Other words used to describe the relationship between elements should be similarly interpreted, such as "between" and "directly between," "attached" and "directly attached," "adjacent" and "directly adjacent," etc.

[0044] It should also be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings. The words "inner" and "outer" used refer to directions toward or away from the geometric center of a particular component, respectively. It can be understood that these terms are used here to describe the relationship of one element, layer or region relative to another element, layer or region as shown in the drawings. In addition to the orientations described in the drawings, these terms should also include other orientations of the device.

[0045] Other aspects of the present invention will be apparent to those skilled in the art in view of the disclosure herein.

[0046] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation methods of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings and other implementation methods can be obtained based on these drawings without creative work.

[0047] It should also be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present application. The drawings only show the components related to the present application and are not drawn according to the number, shape and size of the components in actual implementation. The type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated. For example, the thickness of the components in the drawings may be exaggerated for the sake of clarity.

[0048] Example

[0049] In view of the difficulty in implementing in-situ electrical experiments under TEM in the existing technology, such as Figure 1 As shown, the present invention provides a method for preparing an electrode under a temperature field applied to a TEM in-situ experimental chip, comprising the following steps:

[0050] Step S1, obtaining an initial function chip, exposing a core working unit of the initial function chip, and depositing a hard mask at least directly above the core working unit, wherein the core working unit of the initial function chip includes at least a first electrode;

[0051] Step S2, preparing a micro-thin sheet based on the cross-sectional area of ​​the core working unit of the deposited hard mask, and transferring the micro-thin sheet to a preset processing unit; the preset processing unit includes an electrically heated electrode area and an electrically connected electrode area, the micro-thin sheet is located directly above the electrically heated electrode area, and the micro-thin sheet is etched to expose the core working unit of the micro-thin sheet and the nanoscale first electrode;

[0052] Step S3, the electrically heated electrode region is provided with a patterned electrically heated electrode, the electrically heated electrode is used to provide a temperature field to heat the etched micro-thin slice, so as to form a deposition electrode above the electrically heated electrode region; the electrically connected electrode region is provided with an electrically connected electrode, the electrically connected electrode corresponds to the pin position of the nanoscale first electrode of the etched micro-thin slice, and is electrically connected through the deposition electrode;

[0053] Step S4, cooling the etched micro-slice, and depositing a protective layer around the etched micro-slice to complete the preparation; wherein,

[0054] The core working unit of the initial function chip may be configured in the form of any one of a storage unit, a switch unit, and a computing unit.

[0055] Specifically, the micro-thin sheet is located directly above the area of ​​the energized heating electrode to facilitate precise heating processing and connection, and the preparation of the deposition electrode is completed in a heating environment; when the preparation is completed, one side of the deposition electrode is electrically connected to the nano-sized pin of the exposed nanoscale first electrode on the micro-thin sheet, and the other side is connected to the preset energized connection electrode in the energized connection electrode area of ​​the in-situ experimental chip, thereby realizing the construction of the chip electrical circuit; the in-situ experimental chip is a commercially purchased or independently prepared silicon-based chip with a hollow middle for in-situ observation in an electron microscope, and the preset energized connection electrode is an electrode dedicated to energization of the in-situ experimental chip, and the preset energized connection electrode is located on the upper part of the SIN membrane of the in-situ experimental chip, and different energized connection electrodes are arranged in parallel, with a distance of 5μm-20μm between each other. The high temperature environment can effectively promote the decomposition of organic matter in the precursor gas, reduce the organic matter inside the electrode, and thus prevent the organic matter from affecting the electrical properties of the chip.

[0056] In addition, in order to carry out other subsequent electrical experiments, the volume of the preset energized connected electrode is usually larger, at least larger than the volume of the nanoscale first electrode. When conducting other electrical experiments, the preset energized connected electrode is connected to an external experimental electrical device (not shown in the figure) and forms an experimental electrical circuit with the external experimental electrical device. It should be understood that the experimental electrical circuit is independent of the aforementioned chip electrical circuit.

[0057] Specifically, the core working unit of the initial function chip is configured in the form of: any one of a storage unit, a switch unit, and a computing unit.

[0058] Preferably, the micro-thin sheet is a nano-scale thin sheet, the pin size of the nano-scale first electrode of the micro-thin sheet is nano-scale, the hard mask is rectangular, and the thickness is 5nm~2000nm; the deposition electrode is a long strip, with a thickness of 5nm~100nm and a width of 20nm~2um.

[0059] In a preferred embodiment, Figure 2 As shown, step S2 includes:

[0060] Step S2.1, based on a focused ion beam mask deposition method, preparing a cross-sectional area of ​​the core working unit where the hard mask is deposited into a micro-thin slice;

[0061] Step S2.2, taking out the micro-sheet and fixing it at the needle tip, the needle tip is used for welding;

[0062] Step S2.3, transferring the micro-thin slice at the needle tip to the area directly above the powered heating electrode of the in-situ experimental chip as a preset processing unit;

[0063] Step S2.4, etching to reduce the thickness of the micro-slice, so that at least the core working unit and the nanoscale first electrode of the micro-slice are exposed after etching.

[0064] Specifically, the needle tip is made of tungsten; more specifically, the micro-thin sheet is taken out from the initial functional chip and fixed on a tungsten needle tip for welding in a focused ion beam system. The preset processing position corresponds to the core working unit position and is aligned manually by visual operation or by a processing machine up and down.

[0065] In a preferred embodiment, an isolation protection layer is provided between the powered heating electrode region and the powered communication electrode region, so that the powered heating electrode and the powered communication electrode are independent of each other. It should be understood that the powered heating electrode region and the powered communication electrode region can be arranged adjacent to each other or separated.

[0066] Preferably, the energized heating electrode is of an annular design, and the annular setting can heat the local position of the chip more evenly, ensuring that the chip is in a uniform and stable temperature field.

[0067] In a preferred embodiment of the present invention, step S3 comprises:

[0068] The long strip deposition electrode is prepared by electron beam electrode deposition mode in a heating environment. The deposition electrode is prepared by platinum or tungsten. The position, number of pins and position of the energized electrode are matched with the nanoscale first electrode of the etched micro-sheet.

[0069] The powered heating electrode is electrically connected to an external electrical device (not shown in the figure), and the temperature field is adjusted by controlling the external electrical device. By applying an excitation to the powered heating electrode, the temperature of the powered heating electrode can be measured while heating the powered heating electrode area, which is conducive to maintaining the stability of the electrode preparation environment. It should be understood that the external electrical device described here is independent of the aforementioned external experimental electrical device. It can be understood that the above-mentioned heating operation can be implemented by placing the in-situ experimental chip on a high vacuum heating table and making appropriate electrical connections.

[0070] Specifically, since the thickness of the platinum electrode or the tungsten electrode is precisely controllable, the material for making the electrically heated electrode is platinum or tungsten. More preferably, the electrically heated electrode is made of a platinum electrode.

[0071] The temperature-resistance curve of the platinum electrode is as follows Figure 3 As shown, the horizontal axis represents temperature in degrees Celsius, and the vertical axis represents resistance in mΩ*cm.

[0072] In a preferred embodiment of the present invention, step S4 further includes:

[0073] Step S4.1, stopping heating of the energized heating electrode region of the in-situ experimental chip, and at least allowing the etched micro-chip to cool to room temperature;

[0074] Step S4.2, using a 2KV, 39PA low-energy electron beam to reduce the thickness of the core working unit;

[0075] Step S4.3, depositing silicon oxide around the etched micro-thin slice to prepare a protective layer so as to be covered by the protective layer;

[0076] Step S4.4, complete the preparation.

[0077] Preferably, the energized heating electrode provides a temperature field through a resistance feedback electrode heater, so that the temperature of the preset processing position and the energized connected electrode area maintains a uniform temperature field, and the heating temperature does not exceed 1100° C. In the step S4.2, the thickness of the core working unit is thinned to 10nm~100nm in a low voltage and low beam current environment, preferably, to less than 50nm.

[0078] In a specific embodiment of the present invention, the protective layer has a thickness of 5 nm to 50 nm.

[0079] Application Examples

[0080] In a practical application example, Figure 3 As shown in the structural schematic diagram, the present invention proposes a method for preparing an electrode under a temperature field for a TEM in-situ experimental chip, which specifically includes:

[0081] (1) A phase change memory chip with storage function is selected as the initial function chip. The initial function chip can be in any form. In this application example, the initial function chip is a mushroom-shaped chip. The mushroom-shaped initial function chip includes an upper electrode 1 and a lower electrode 2. A functional layer (not shown in the figure) is included between the upper electrode 1 and the lower electrode 2. The diameter of the lower electrode 2 is 90nm, and the thickness of the upper electrode 1 is 500nm. The packaging material above the phase change memory chip is removed by chemical mechanical polishing until the core working unit that needs to be processed on the surface of the phase change memory chip is exposed. The core working unit includes a first electrode layer 3; a tungsten hard mask with a thickness of 2um is deposited above the phase change memory chip by using focused ion beam mask deposition technology;

[0082] (2) Using focused ion beam extraction technology, the cross-sectional area of ​​the phase change memory chip unit on which the tungsten hard mask has been deposited is prepared into a nano-thin sheet, which is lifted out of the phase change memory chip and fixed on the tungsten needle tip used for welding the sample in the focused ion beam system;

[0083] (3) transferring the phase change memory chip unit nanosheet fixed on the tungsten needle tip to a preset processing unit on the powered in-situ experimental chip, placing the powered in-situ experimental chip with the phase change memory chip unit nanosheet fixed on a high vacuum heating table, and further etching and thinning the nanosheet to expose the core working unit and the corresponding nano-sized electrode; the preset processing area is not smaller than the size of the core working unit;

[0084] (4) The energized heating electrode (not shown in the figure) heats the preset processing area and the energized area through a resistive feedback electrode heater, the temperature does not exceed the crystallization temperature of the phase change, and deposits the deposition electrode 4 using an electron beam electrode deposition mode under a heating environment, and connects the nanoscale first electrode 3 inside the upper electrode 1 and the lower electrode 2 of the etched nanosheet to the preset energized connection electrode 5 through the deposition electrode 4, thereby completing the construction of the chip electrical circuit;

[0085] (5) Stop heating and cool the temperature of the high vacuum heating table to room temperature. Then, further thin the core working unit in the nanosheet with the electrical circuit welded to it to 50 nm under low voltage and low beam current. Then, deposit a 20 nm SiOx coating layer around the sheet as a protective layer when the device is working. Finally, the preparation of the integrated circuit chip sample and its electrode for TEM in situ electrical experiments is completed.

[0086] In summary, the present invention has achieved the following effects:

[0087] The present invention provides a method for preparing electrodes under a temperature field for a TEM in-situ experimental chip, comprising depositing a hard mask directly above a core working unit of an initial functional chip, wherein the core working unit comprises at least a first electrode; preparing a micro-thin sheet and transferring the micro-thin sheet to a preset processing position; the second electrode is used to provide a stable temperature field, and deposits and prepares an energized connection electrode under a heating environment, so that the energized connection electrode connects the first electrode with the preset electrode to build a complete chip electrical circuit; the position of the energized connection electrode corresponds to the pin of the first electrode; the initial functional chip is cooled, and a protective layer is deposited around the initial functional chip to complete the preparation of the chip product. In the preparation method provided by the present invention, the core working unit in the actual integrated circuit chip is first transferred to the in-situ powered chip, and then the electrode is deposited under high temperature conditions. The high temperature environment can effectively promote the decomposition of organic matter in the precursor gas, reduce the organic matter inside the electrode, and avoid affecting the electrical properties of the chip. The prepared chip product electrode connection has better conductivity and can be more widely used in TEM in-situ electrical characterization; and the heating area is determined according to the area of ​​the electrode to be prepared, which can achieve local precise heating and maintain a uniform and stable temperature field, effectively avoiding failure or even damage in other non-welding areas due to high temperature.

[0088] Based on this application, it should be understood by those skilled in the art that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number and aspect described herein can be used to implement the device and / or practice the method. In addition, other structures and / or functionalities other than one or more of the aspects described herein can be used to implement this device and / or practice this method.

[0089] It should be noted that the above embodiments can be freely combined as needed. The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered as the protection scope of the present invention.

[0090] All documents mentioned in the present invention are cited as references in this application, just as each document is cited as reference separately. In addition, it should be understood that after reading the above content of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the claims attached to this application.

Claims

1. A method for preparing an electrode under a temperature field for a TEM in-situ experimental chip, characterized in that: The following steps are involved: Step S1, obtaining an initial function chip, exposing a core working unit of the initial function chip, and depositing a hard mask at least directly above the core working unit, wherein the core working unit of the initial function chip includes at least a first electrode; Step S2, preparing a micro-thin sheet based on the cross-sectional area of ​​the core working unit of the deposited hard mask, and transferring the micro-thin sheet to an in-situ experimental chip as a preset processing unit; the preset processing unit includes an energized heating electrode area and an energized connecting electrode area, the micro-thin sheet is located directly above the energized heating electrode area, and the micro-thin sheet is etched to expose the nanoscale first electrode of the core working unit of the micro-thin sheet; Step S3, the electrically heated electrode region is provided with a patterned electrically heated electrode, and the electrically heated electrode is used to provide a temperature field to heat the etched micro-thin slice, so as to form a deposition electrode above the electrically heated electrode region; the electrically connected electrode region is provided with an electrically connected electrode, and the electrically connected electrode corresponds to the pin position of the nanoscale first electrode of the etched micro-thin slice, and the two are electrically connected through the deposition electrode; Step S4, cooling the etched micro-slice, and depositing a protective layer around the etched micro-slice to complete the preparation; wherein, The core working unit of the initial function chip may be configured in the form of any one of a storage unit, a switch unit, and a computing unit.

2. The method for preparing an electrode under a temperature field for a TEM in-situ experimental chip according to claim 1, characterized in that: Step S2 includes: Step S2.1, based on a focused ion beam mask deposition method, preparing a cross-sectional area of ​​the core working unit where the hard mask is deposited into a micro-thin slice; Step S2.2, taking out the micro-sheet and fixing it at the needle tip, the needle tip is used for welding; Step S2.3, transferring the micro-thin slice at the needle tip to the area directly above the powered heating electrode of the in-situ experimental chip as a preset processing unit; Step S2.4, etching to reduce the thickness of the micro-slice, so that at least the core working unit and the nanoscale first electrode of the micro-slice are exposed after etching.

3. The method for preparing an electrode under a temperature field for a TEM in-situ experimental chip according to claim 2, characterized in that: The needle tip in step S2.2 is made of tungsten.

4. The method for preparing an electrode under a temperature field for a TEM in-situ experimental chip according to claim 1 or 2, characterized in that: The step S3 comprises: The long strip deposition electrode is prepared by electron beam electrode deposition mode in a heating environment. The deposition electrode is prepared by platinum or tungsten. The position, number of pins and position of the energized electrode are matched with the nanoscale first electrode of the etched micro-sheet.

5. The method for preparing an electrode under a temperature field for a TEM in-situ experimental chip according to claim 4, characterized in that: The energized heating electrode provides a temperature field through a resistance feedback electrode heater, so that the temperature of the energized heating electrode area maintains a uniform temperature field, and the heating temperature does not exceed 1100°C.

6. The method for preparing an electrode under a temperature field for a TEM in-situ experimental chip according to claim 1 or 2, characterized in that: Step S4 also includes: Step S4.1, stopping heating of the energized heating electrode region of the in-situ experimental chip, and at least allowing the etched micro-chip to cool to room temperature; Step S4.2, using a 2KV, 39PA low-energy electron beam to reduce the thickness of the core working unit; Step S4.3, depositing silicon oxide around the etched micro-thin slice to prepare a protective layer so as to be covered by the protective layer; Step S4.4, complete the preparation.

7. The method for preparing an electrode under a temperature field for a TEM in-situ experimental chip according to claim 6, characterized in that: In the step S4.2, the thickness of the core working unit is thinned to 10nm~100nm.

8. The method for preparing an electrode under a temperature field for a TEM in-situ experimental chip according to claim 1, characterized in that: The thickness of the hard mask is 5nm-2000nm, the hard mask is rectangular, the micro-thin slice is a nano-scale thin slice, and the pin size of the nano-scale first electrode is nano-scale.

9. The method for preparing an electrode under a temperature field for a TEM in-situ experimental chip according to claim 1, characterized in that: The thickness of the deposited electrode is 5nm~100nm, and the width of the deposited electrode is 20nm~2um.

10. The method for preparing an electrode under a temperature field for a TEM in-situ experimental chip according to claim 1, characterized in that: The thickness of the protective layer is 5nm~50nm.

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