Perovskite solar cell and preparation method thereof

Abstract

The embodiment of the invention relates to the technical field of solar cells, and provides a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a conductive substrate; a hole transport layer laminated on the upper surface of the conductive substrate; wherein the hole transport layer is made of nickel oxide; a composite layer laminated on the upper surface of the hole transport layer; the material of the composite layer comprises an SAM material and a conductive polymer; and the perovskite light absorption layer is laminated on the upper surface of the composite layer. According to the invention, the composite layer is arranged between the hole transport layer and the perovskite light absorption layer, so that direct contact between nickel oxide in the hole transport layer and the perovskite light absorption layer is effectively blocked, and non-radiative recombination loss caused by an oxidation-reduction reaction at an interface between the nickel oxide and the perovskite light absorption layer is inhibited, thereby improving the interface stability of the perovskite cell, and improving the performance of the perovskite cell. Therefore, the photoelectric conversion efficiency and the long-term stability of the device are enhanced.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite solar cell and a preparation method thereof, and a photovoltaic module. Background Art

[0002] As a clean and renewable energy, solar energy has been internationally recognized as one of the most competitive energy sources due to its unique advantages such as wide distribution, safety and durability. At present, solar cells have developed from crystalline silicon solar cells to perovskite solar cells. Perovskite solar cells have broad research prospects and commercial value due to their high absorption coefficient, adjustable band gap, simple preparation, low cost, and high photoelectric conversion efficiency.

[0003] Nickel oxide (NiO) is a commonly used inorganic hole transport layer material in perovskite solar cells. x ) is a wide-gap p-type semiconductor material due to its high transparency in the visible light region and stable physical and chemical properties. In addition, due to its simple nanoparticle synthesis method, wide source of raw materials and diverse thin film preparation methods, it is widely used in pin-structured perovskite solar cells (PSCs) and is regarded as one of the indispensable materials for the commercialization of PSC devices.

[0004] In the inorganic hole transport layer, the high-valence Ni on the surface of the film has strong oxidizing properties and can oxidize the perovskite in the upper perovskite light-absorbing layer, causing segregation at the interface between the perovskite light-absorbing layer and the hole transport layer, hindering the transport and extraction of carriers, and thus weakening the performance of the solar cell device.

[0005] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Summary of the invention

[0006] The embodiments of the present application provide a perovskite solar cell and a preparation method thereof, and a photovoltaic module to solve or alleviate one or more of the technical problems raised above.

[0007] Conductive substrate; A hole transport layer, stacked on the upper surface of the conductive substrate; wherein the material of the hole transport layer is nickel oxide; A composite layer, stacked on the upper surface of the hole transport layer; the material of the composite layer includes a SAM material and a conductive polymer; The perovskite light absorbing layer is stacked on the upper surface of the composite layer.

[0008] Optionally, the conductive polymer includes one or more of poly(3,4-ethylenedioxythiophene) (PEDOT), PEDOT derivatives, polyaniline (PANI), PANI derivatives, polypyrrole (PPy), PPy derivatives, polythiophene (PT), PT derivatives, polyfluorene (PF), PF derivatives, poly(N-vinylcarbazole) (PVK), PVK derivatives, PFN-Br, and PEDOT:PSS.

[0009] Optionally, the SAM material includes one or more of 2PACz, 4PACz, Me-2PACz, Me-4PACz, MeO-2PACz, and MeO-4PACz.

[0010] In a second aspect, an embodiment of the present application provides a method for preparing a perovskite solar cell, comprising the following steps: providing a conductive substrate; forming a hole transport layer on the upper surface of the conductive substrate; wherein the material of the hole transport layer is nickel oxide; The SAM material, the conductive polymer and the organic solvent are uniformly mixed and configured into a composite layer precursor solution under predetermined conditions; placing the composite layer precursor solution on the upper surface of the hole transport layer to form a composite layer; A perovskite light absorbing layer is formed on the upper surface of the composite layer.

[0011] Optionally, the organic solvent includes one or more of methanol, ethanol, isopropanol, and chlorobenzene.

[0012] Optionally, in the composite layer precursor solution, the concentration of the SAM material is 0.2-1 mg / mL.

[0013] Optionally, in the composite layer precursor solution, the concentration ratio of the conductive polymer to the SAM material is (0.01-2):1.

[0014] Optionally, the predetermined condition is a stirring speed of 100-5000 rpm.

[0015] Optionally, the thickness of the composite layer is 1-3 nm.

[0016] In a third aspect, an embodiment of the present application provides a photovoltaic module, wherein the photovoltaic module includes the perovskite solar cell as described above.

[0017] The above technical solution adopted in the embodiment of the present application may have the following advantages: By setting a composite layer between the hole transport layer and the perovskite light absorbing layer, the direct contact between the nickel oxide in the hole transport layer and the perovskite light absorbing layer is effectively blocked, and the non-radiative recombination loss caused by the redox reaction at the interface between the two is suppressed, thereby improving the interface stability of the perovskite battery; in addition, the conductive polymer in the composite layer can provide a stable skeleton for the SAM molecules, making the SAM material molecules more evenly dispersed, so that they are more completely coated on the surface of the hole transport layer, optimizing the interface structure, and improving the carrier transmission and extraction efficiency, thereby enhancing the photoelectric conversion efficiency and long-term stability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application.

[0019] Figure 1 It is a schematic diagram of the structure of a perovskite solar cell provided in an embodiment of the present application.

[0020] Description of reference numerals: 1. Conductive substrate; 2. Hole transport layer; 3. Composite layer; 4. Perovskite light absorption layer; 5. Passivation layer; 6. Buffer layer; 7. Electrode. DETAILED DESCRIPTION

[0021] Embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the accompanying drawings, for clarity, the sizes of layers, regions, elements and their relative sizes may be exaggerated. Wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limitations on the present application. It should be noted that, in the absence of conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0022] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present application discloses the existence of the first element, component, region, layer or part.

[0023] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0024] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0025] In the present application, when it comes to a numerical interval (i.e., a numerical range), unless otherwise specified, the distribution of the optional numerical values ​​in the numerical interval is considered to be continuous, and includes the two numerical endpoints (i.e., the minimum and maximum values) of the numerical interval, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to an integer in the numerical interval, it includes the two endpoint integers of the numerical range, and each integer between the two endpoints, which is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical range disclosed in the present application should be understood to include any and all sub-ranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. "Numerical interval" allows for broadly including quantitative intervals such as percentage intervals, ratio intervals, and ratio intervals.

[0026] The following provides an explanation of the terms used in this application.

[0027] 2PACz: (2-(9H-carbazol-9-yl)ethyl)phosphonic acid; PFN-Br: poly(9,9-bis(3'-(N,N-dimethyl)-N-ethylaminopropyl-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)) dibromide; PEDOT:PSS: poly(2,3-dihydrothieno-1,4-dioxo)-poly(styrene sulfonate); 4PACz: [4-(9H-carbazol-9-yl)butyl]phosphonic acid; Me-2PACz: (2-(3,6-dimethyl-9H-carbazol-9-yl)butyl)phosphonic acid; Me-4PACz: (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl)phosphonic acid; PC61BM: [6,6]-phenyl C{61}butyric acid methyl ester; PC71BM: [6,6]-phenyl C{71}butyric acid methyl ester; MeO-2PACz: [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid; MeO-4PACz: [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]phosphonic acid.

[0028] Hereinafter, exemplary embodiments according to the present application will be described in more detail with reference to the accompanying drawings. It should be noted that these exemplary embodiments can be implemented in many different forms and should not be construed as being limited to the embodiments described herein.

[0029] In a first aspect, an embodiment of the present application provides a perovskite solar cell, the perovskite solar cell comprising: Conductive substrate; A hole transport layer is stacked on the upper surface of the conductive substrate; wherein the material of the hole transport layer is nickel oxide; A composite layer, stacked on the upper surface of the hole transport layer; the material of the composite layer includes a SAM material and a conductive polymer; The perovskite light-absorbing layer is stacked on the upper surface of the composite layer.

[0030] In this embodiment, by providing a composite layer between the hole transport layer and the perovskite light absorbing layer, the direct contact between the nickel oxide in the hole transport layer and the perovskite light absorbing layer is effectively blocked, and the non-radiative recombination loss caused by the redox reaction at the interface between the two is suppressed, thereby improving the interface stability of the perovskite battery; in addition, the conductive polymer in the composite layer provides a stable skeleton, so that the SAM material molecules are more evenly dispersed, thereby being more completely coated on the surface of the hole transport layer, optimizing the interface structure, and improving the carrier transmission and extraction efficiency, thereby enhancing the stability and long-term performance of the device.

[0031] It should be noted that during the use of SAM materials, due to the problem of uneven coating of SAM materials, it is also difficult to suppress the interface reaction, resulting in poor device performance. In the embodiment of the present application, a conductive polymer is introduced into the SAM material and modified on the surface of the hole transport layer to improve the conductivity and coverage of the SAM material on the surface of the hole transport layer, thereby blocking the contact between the hole transport layer and the perovskite light absorption layer to inhibit the redox reaction at the interface and improve the carrier transmission and extraction process at the interface. And the conductive polymer has good electrical conductivity and conductive properties, which contributes to the rapid transmission of electrons. SAM materials can provide chemical stability of the interface and specific electronic energy level regulation, so that the charge is more efficiently transmitted at the interface. Conductive polymers and SAM materials work together to effectively improve the transmission efficiency of charges in the battery. Conductive polymers are mixed with SAM materials to increase the voltage of perovskite solar cells by improving the carrier transmission capacity of the hole transport layer, thereby improving the photoelectric conversion efficiency of the battery.

[0032] In addition, during the formation of the composite layer, a composite layer precursor solution is configured using SAM material, conductive polymer and organic solvent, and then the composite layer precursor solution is coated on the upper surface of the hole transport layer, and then annealed. During the annealing process, the organic solvent evaporates, thereby forming a composite layer including SAM material and conductive polymer.

[0033] In an optional embodiment, the conductive polymer includes one or more of poly(3,4-ethylenedioxythiophene) (PEDOT), PEDOT derivatives, polyaniline (PANI), PANI derivatives, polypyrrole (PPy), PPy derivatives, polythiophene (PT), PT derivatives, polyfluorene (PF), PF derivatives, poly(N-vinylcarbazole) (PVK), and PVK derivatives. The conductive polymer is mixed with the SAM material to increase the voltage of the perovskite solar cell by improving the carrier transport capacity of the hole transport layer, thereby improving the photoelectric conversion efficiency of the battery. In addition, the conductive polymer has good air stability, which is beneficial to improving the stability of the device.

[0034] In an optional embodiment, the SAM material includes one or more of 2PACz, 4PACz, Me-2PACz, Me-4PACz, MeO-2PACz, and MeO-4PACz.

[0035] In this embodiment, the SAM material can adjust the energy level structure at the interface through its specific molecular structure and chemical functional groups, which helps to optimize the transmission efficiency of electrons and holes in the perovskite battery and reduce the recombination loss of charges. The SAM material can adjust the energy level position of the charge to better match the energy band structure of the perovskite light absorption layer and the hole transport layer, thereby improving the photoelectric conversion efficiency of the battery.

[0036] In a second aspect, the present application also provides a method for preparing a perovskite solar cell, comprising the following steps: S1: providing a conductive substrate; S2: forming a hole transport layer on the upper surface of the conductive substrate; S3: uniformly mixing the SAM material, the conductive polymer and the organic solvent, and configuring a composite layer precursor solution under predetermined conditions; S4: placing a composite layer precursor solution on the upper surface of the hole transport layer to form a composite layer; S5: forming a perovskite light absorbing layer on the upper surface of the composite layer.

[0037] In an optional embodiment, after forming the perovskite light absorbing layer, the method for preparing a perovskite solar cell further includes: S6: forming a passivation layer on the upper surface of the perovskite light absorbing layer; S7: forming a buffer layer on the upper surface of the passivation layer; S8: forming an electrode on the upper surface of the buffer layer.

[0038] In some embodiments, a transparent conductive oxide layer can be formed on a transparent glass or plastic substrate, and the transparent glass (or plastic substrate) and the transparent conductive oxide layer together constitute a transparent conductive substrate (conductive substrate). A transparent conductive oxide layer can be formed on a transparent glass (or plastic substrate) by magnetron sputtering. The material of the transparent conductive oxide layer includes one or more of indium tin oxide (ITO), indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), fluorine-doped tin oxide (FTO), cerium-doped indium oxide (ICO), aluminum-doped zinc oxide (AZO), and boron-doped zinc oxide (BZO). The square resistance of the conductive substrate is 5-25Ω / sq, and the transparent conductive substrate can be cleaned, laser etched, and ultraviolet treated. The step of cleaning the transparent conductive substrate may include: placing the transparent conductive substrate in an ultrasonic cleaning instrument, and ultrasonically cleaning it with ITO cleaning agent, deionized water, acetone, and isopropyl alcohol (IPA) in sequence, and the cleaning time for each link is 10-20 minutes (for example, 15 minutes). The step of ultraviolet treating the transparent conductive substrate may include: treating the transparent conductive substrate with a UV-zone, wherein the treatment time is 10-30 minutes.

[0039] In some embodiments, the material of the hole transport layer is nickel oxide (NiO x ). The hole transport layer material is first added to a diluent for dilution, and then the hole transport layer is prepared by spin coating, vacuum evaporation, magnetron sputtering, atomic layer deposition, etc., wherein the diluent includes one or both of ethanol and isopropanol. The thickness of the hole transport layer can be 1-70 nm.

[0040] In some embodiments, the perovskite material is dissolved in an organic solvent to prepare a perovskite precursor solution, and the perovskite precursor solution can be coated on the upper surface of the functional layer by a slit coating method, and then annealed to form a perovskite light-absorbing layer. The chemical formula of the perovskite material is FA x Cs 1-x PbB y I 3-y (x=0.85-1, y=0-3). In the annealing process, the annealing temperature may be 100-180°C, and the annealing time may be 10-60 minutes. The thickness of the perovskite light absorbing layer may be 100-800 nm.

[0041] In some embodiments, the material of the passivation layer is 2-thiopheneethylamine hydrochloride (TEACl), 1,4-phenylenediamine hydroiodide (PDADI), phenylethylamine iodide (PEAI), phenylethylammonium bromide (PEABr), CF 3-PEACl (trifluorophenylethylammonium chloride) and one or more thereof, and the thickness of the passivation layer is 0.1-5nm (for example, 0.1nm, 2nm, 3nm, 5nm), and the substrate of the passivation layer after evaporation is heated at 50-150℃ (for example, 100℃, 120℃, 150℃) for 3-10min (for example, 3min, 6min, 10min). The passivation layer can be prepared by spin coating, vacuum evaporation, magnetron sputtering, atomic layer deposition and other methods. When the vacuum evaporation method is used, the evaporation rate is 0.1-1Å / s (for example, 0.3Å / s, 0.5Å / s, 1Å / s).

[0042] In some embodiments, the material of the buffer layer is bathocuproine (BCP), tin dioxide (SnO 2 ) and ytterbium trioxide (Yr 2 O 3 ). The buffer layer can be prepared by spin coating, vacuum evaporation, magnetron sputtering, atomic layer deposition and the like. When the vacuum evaporation method is used, the evaporation rate is 0.1-1Å / s, the evaporation time is 1500s, and the evaporation thickness is 5-20nm (e.g., 5nm, 10nm, 15nm, 20nm).

[0043] In some embodiments, the electrode includes at least one of Au, Ag, Al, Cu, graphene, nanocrystalline silicon, indium tin oxide (ITO), indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), and fluorine-doped tin oxide (FTO). The electrode can be prepared by thermal evaporation, vacuum evaporation, sputtering, atomic layer deposition, 3D printing, screen printing, inkjet printing, etc. When the vacuum evaporation method is used, the evaporation rate is 0.5-3Å / s, the evaporation time is 1000-2000s, and the final evaporation thickness is 100-400nm (e.g., 300nm, 350nm, 400nm).

[0044] In an optional embodiment, the organic solvent includes one or more of methanol, ethanol, isopropanol, and chlorobenzene.

[0045] In this embodiment, the organic solvent has good solubility for the SAM material and the conductive polymer and also has a relatively low boiling point, and is easily volatilized during the annealing process without affecting the composite layer.

[0046] In an optional embodiment, in the composite layer precursor solution, the concentration of the SAM material is 0.2-1 mg / mL.

[0047] In this embodiment, a SAM concentration higher than 1 mg / mL will result in a thicker SAM layer with uneven arrangement, which will affect the transport of carriers; a SAM concentration lower than 0.2 mg / mL will result in incomplete SAM coverage on the substrate and failure to obtain a dense film.

[0048] In an optional embodiment, in the composite layer precursor solution, the concentration ratio of the conductive polymer to the SAM material is (0.01-2):1.

[0049] In this embodiment, a concentration ratio of the conductive polymer to the SAM material lower than 0.01:1 or higher than 2:1 will lead to a decrease in device performance, which is mainly manifested in a decrease in open circuit voltage and fill factor.

[0050] In an optional embodiment, the predetermined condition is stirring at room temperature, and the stirring speed is 100-5000 rpm. For example, the stirring speed is 100 rpm, 1500 rpm, or 5000 rpm.

[0051] In an optional embodiment, the composite layer has a thickness of 1-3 nm.

[0052] In the present embodiment, when the thickness of the composite layer is less than 1nm, it is impossible to effectively block the recombination of electrons and holes between the hole transport layer and the perovskite light absorbing layer, thereby increasing the loss of photogenerated carriers and reducing the photoelectric conversion efficiency of the battery. In addition, it is also impossible to provide sufficient interface stability, resulting in an increase in chemical reactions at the interface during battery operation, affecting the long-term stability and life of the battery. When the thickness of the composite layer is greater than 3nm, the transmission path length of electrons and holes inside the composite layer will increase, resulting in an increase in the transmission resistance of the charge, thereby reducing the mobility of the charge and causing the loss of photogenerated carriers, thereby reducing the efficiency of the battery. Therefore, when the thickness of the composite layer is 1-3nm, it is ensured that while preventing the recombination of electrons and holes, the resistance to charge transfer is not increased, thereby maximizing the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0053] The following specific examples further illustrate the present application, but should not be construed as limiting the present application. Without departing from the spirit and substance of the present application, modifications or replacements made to the methods, steps or conditions of the present application are within the scope of the present application.

[0054] [Example 1] like Figure 1 As shown, the specific structure of a perovskite solar cell is: A conductive substrate 1, a hole transport layer 2, a composite layer 3, a perovskite light absorption layer 4, a passivation layer 5, a buffer layer 6, and an electrode 7 are stacked in sequence.

[0055] The specific preparation process of a perovskite solar cell is as follows: Step S1a: providing a conductive substrate; Step S2a: forming a hole transport layer with a thickness of 15 nm on the upper surface of the conductive substrate by magnetron sputtering; Step S3a: 0.6 mg PEDOT and 1.0 mg 2PACz were weighed and mixed to obtain a mixture, and then 1 mL of isopropanol was added to the mixture, and the mixture was stirred at room temperature and a stirring speed of 3000 rpm until the mixture was completely dissolved to obtain a composite layer precursor solution, and the composite layer precursor solution was applied on the hole transport layer by spin coating or solution coating, and the annealing temperature was 100° C. and the annealing time was 10 min to deposit a 2 nm composite layer on the hole transport layer; Step S4a: Perovskite materials FAI, PbI 2 , MACl, MAI, and CsI powders were mixed to obtain a mixture, and 1 mL of a third organic solvent (DMF:NMP volume ratio of 5:1) was added to the mixture to dissolve the mixture to obtain Cs 0.05 FA 0.90 MA 0.05 PbI 3 Perovskite precursor solution, the perovskite precursor solution is deposited on the surface of the composite layer by spin coating or solution coating, the annealing temperature is 150° C., the annealing time is 10 min, and the annealing obtains a perovskite light absorbing layer with a thickness of 450 nm; Step S5a: depositing 1,4-phenylenediamine hydroiodide (PDADI) on the upper surface of the perovskite light absorbing layer by an evaporation method to form a passivation layer with a thickness of 1 nm; Step S6a: Depositing ytterbium trioxide (Yr) on the upper surface of the passivation layer by thermal evaporation 2 O 3 ) to form a buffer layer, the thickness of the buffer layer is 20nm; Step S7a: Depositing ITO on the upper surface of the buffer layer by thermal evaporation to form an electrode, the thickness of the electrode being 50 nm.

[0056] Wherein, in the composite layer precursor solution, the concentration C1 of the SAM material is 1 mg / mL, the concentration C2 of the conductive polymer is 0.6 mg / mL; and the concentration ratio V1 of the conductive polymer to the SAM material is 0.6:1.

[0057] [Example 2] - [Example 4] The perovskite solar cells of Examples 2-4 were prepared by referring to the preparation method of Example 1, except that the types of SAM materials and conductive polymers used were different, and the concentrations and concentration ratios of the conductive polymer and the SAM material were different (the concentration of the SAM material was C1, the concentration of the conductive polymer was C2, and the concentration ratio of the conductive polymer and the SAM material was V1). As shown in Table 1 below.

[0058] Table 1: Formulations of perovskite solar cells of Examples 2-4

[0059] [Comparative Example 1] The difference from the structure of the perovskite solar cell in Example 1 is that no composite layer is used in Comparative Example 1.

[0060] [Comparative Example 2] The perovskite solar cell of Comparative Example 2 was prepared by referring to the preparation method of Example 1, except that, in step S3a, no conductive polymer was added.

[0061] The following is a performance test of the perovskite solar cells provided in Examples 1-4 of the present application and Comparative Examples 1-2, so as to obtain the open circuit voltage Voc, short circuit current density Jsc, fill factor Fill Factor, and photoelectric conversion efficiency Efficiency of the corresponding battery devices. The test results are shown in Table 2.

[0062] Table 2 Performance test results of perovskite solar cells of Examples 1-4 and Comparative Examples 1-2

[0063] It can be seen from Table 2 that, in combination with Examples 1-4 and Comparative Example 1, the open circuit voltage Voc, fill factor FF, short circuit current density Jsc, and photoelectric conversion efficiency PCE of the perovskite solar cells in Examples 1-4 are significantly improved, which indicates that in Examples 1-4 of the present application, the composite layer provided between the hole transport layer and the perovskite light absorbing layer effectively blocks the direct contact between the nickel oxide in the hole transport layer and the perovskite light absorbing layer, thereby reducing the non-radiative recombination loss caused by the redox reaction between the nickel oxide and the perovskite material, thereby improving the photoelectric conversion efficiency and stability of the battery.

[0064] Combining Examples 1-4 and Comparative Example 2, it can be seen that the conductive polymers in Examples 1-4 can provide a supporting skeleton for the SAM material and improve the coverage, and the conductive polymer and the SAM material work together to effectively improve the charge transfer efficiency in the battery. The conductive polymer and the SAM material increase the voltage of the perovskite solar cell by improving the carrier transport capacity of the hole transport layer, thereby improving the photoelectric conversion efficiency of the battery.

[0065] The embodiment of the present application may also provide a photovoltaic module (not shown), the photovoltaic module comprising the above perovskite solar cell. The perovskite solar cell may be connected in series and / or in parallel with one or more other solar cells in a preset manner. Among them, a plurality of cells may form a cell string, and adjacent cells may be connected together by series welding.

[0066] The embodiment of the present application can provide a photovoltaic system, including the photovoltaic components in any of the above embodiments. The advantages of the above photovoltaic components are also possessed by the photovoltaic system, which will not be repeated here. The above photovoltaic system has a wide range of applications, not only limited to photovoltaic power stations, such as ground power stations, rooftop power stations and water power stations, but also includes various equipment and devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars and solar buildings. Of course, it can be understood that the application scenarios of the photovoltaic system are not limited to this, that is to say, the photovoltaic system can be used in all fields where solar energy is required for power generation. Taking the photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a junction box and an inverter. The photovoltaic array may be an array combination of multiple photovoltaic components. For example, multiple photovoltaic components may form multiple photovoltaic arrays. The photovoltaic array is connected to a junction box. The junction box can converge the current generated by the photovoltaic array. The converged current flows through the inverter and is converted into the alternating current required by the mains power grid, and then connected to the mains network to realize solar power supply.

[0067] It should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The orientation words "inside" and "outside" refer to the inside and outside relative to the outline of each component itself. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Therefore, the exemplary term "above..." can include both "above..." and "below..." orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used here are interpreted accordingly.

[0068] It should also be noted that "one embodiment", "another embodiment", "embodiment", etc. mentioned in this application refer to the specific features, structures or characteristics described in conjunction with the embodiment included in at least one embodiment generally described in this application. The same expression appearing in multiple places in the specification does not necessarily refer to the same embodiment. Further, when describing a specific feature, structure or characteristic in conjunction with any embodiment, it is claimed that the realization of such feature, structure or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0069] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0070] It should also be noted that the above are only preferred embodiments of the present application, and the patent protection scope of the present application is not limited thereto. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A perovskite solar cell, characterized in that: include: Conductive substrate; A hole transport layer, stacked on the upper surface of the conductive substrate; wherein the material of the hole transport layer is nickel oxide; A composite layer, stacked on the upper surface of the hole transport layer; the material of the composite layer includes a SAM material and a conductive polymer; The perovskite light absorbing layer is stacked on the upper surface of the composite layer.

2. The perovskite solar cell according to claim 1, characterized in that The conductive polymer includes one or more of poly(3,4-ethylenedioxythiophene) (PEDOT), PEDOT derivatives, polyaniline (PANI), PANI derivatives, polypyrrole (PPy), PPy derivatives, polythiophene (PT), PT derivatives, polyfluorene (PF), PF derivatives, poly(N-vinylcarbazole) (PVK), PVK derivatives, PFN-Br, and PEDOT:PSS.

3. The perovskite solar cell according to claim 1, characterized in that The SAM material includes one or more of 2PACz, 4PACz, Me-2PACz, Me-4PACz, MeO-2PACz, and MeO-4PACz.

4. The perovskite solar cell according to claim 1, characterized in that: The thickness of the composite layer is 1-3 nm.

5. A method for preparing a perovskite solar cell, characterized in that: The steps include: providing a conductive substrate; forming a hole transport layer on the upper surface of the conductive substrate; wherein the material of the hole transport layer is nickel oxide; The SAM material, the conductive polymer and the organic solvent are uniformly mixed and configured into a composite layer precursor solution under predetermined conditions; placing the composite layer precursor solution on the upper surface of the hole transport layer to form a composite layer; A perovskite light absorbing layer is formed on the upper surface of the composite layer.

6. The method for preparing a perovskite solar cell according to claim 5, characterized in that: The organic solvent includes one or more of methanol, ethanol, isopropanol and chlorobenzene.

7. The method for preparing a perovskite solar cell according to claim 5, characterized in that: In the composite layer precursor solution, the concentration of the SAM material is 0.2-1 mg / mL.

8. The method for preparing a perovskite solar cell according to claim 5, characterized in that: In the composite layer precursor solution, the concentration ratio of the conductive polymer to the SAM material is (0.01-2):

1.

9. The method for preparing a perovskite solar cell according to claim 5, characterized in that: The predetermined condition is that the stirring speed is 100-5000 rpm.

10. A photovoltaic module, characterized in that: The photovoltaic module comprises: The perovskite solar cell according to any one of claims 1 to 4; or A perovskite solar cell prepared by the method for preparing a perovskite solar cell according to any one of claims 5 to 9.

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