Photovoltaic diamond wire and preparation method thereof

Abstract

The invention relates to a photovoltaic diamond wire and a preparation method thereof. The preparation method comprises the following steps: providing a base line; carrying out magnetron sputtering TiN treatment on the base line to obtain a base line plated with a TiN coating; and carrying out annealing treatment on the base line plated with the TiN coating at 600-950 DEG C for 1-10 hours to prepare the photovoltaic diamond wire. According to the preparation method of the photovoltaic diamond wire, the base wire of the photovoltaic diamond wire is subjected to magnetron sputtering TiN (titanium nitride) treatment, and the base wire plated with the TiN coating is obtained; according to the preparation method, the TiN-plated coating base line is subjected to specific annealing treatment, and the time and the temperature of the annealing treatment are controlled, so that the crystal form transformation from alpha-TiN to beta-TiN can be promoted, the densification degree of the functional coating on the surface of a coated part is improved, and the photovoltaic diamond wire has higher strength and electrochemical corrosion resistance.

Description

Technical Field

[0001] The present application relates to the technical field of diamond wire production, and in particular to a diamond wire for photovoltaics and a preparation method thereof. Background Art

[0002] At present, the cutting of silicon rods / silicon carbide ingots in the upstream of the photovoltaic industry chain all adopts diamond wire technology. The quality of diamond wire and cutting effect directly affect the quality of silicon wafers / silicon carbide wafers, the photoelectric conversion performance of photovoltaic modules and production costs. Diamond wire and silicon wafer / silicon carbide wafer cutting are important processes in the upstream production links of the photovoltaic industry.

[0003] The existing method for preparing tungsten diamond wire is usually to add some lanthanide metals other than tungsten or metals that can be highly polished, such as nickel metal, to perform fine grain strengthening, solid solution strengthening, and second dispersed phase strengthening on the tungsten diamond wire, so as to avoid problems such as too fast wire breakage and easy electrochemical corrosion during the processing of the tungsten diamond wire, and to increase the service life of the tungsten diamond wire. However, the above scheme usually requires strict control of the amount of doped metal, and the alloy wire forming preparation steps include: wet grinding mixture preparation, wet grinding mixture drying, granulation, billet forming, removal of forming agent in the pressed green sheet, and pre-sintering of the pressed green sheet, etc., which greatly increases the production cost and risk.

[0004] Therefore, the traditional technology still needs to be improved. Summary of the invention

[0005] Based on this, the present application provides a photovoltaic diamond wire with high strength and electrochemical corrosion resistance and a preparation method thereof.

[0006] The specific technical solutions are as follows:

[0007] On the one hand, the present application provides a method for preparing a photovoltaic diamond wire, comprising the following steps:

[0008] Provide a baseline;

[0009] Performing magnetron sputtering TiN treatment on the baseline to obtain a TiN-coated baseline;

[0010] The TiN-coated wire is annealed at 600° C. to 950° C. for 1 h to 10 h to prepare a photovoltaic diamond wire.

[0011] In the preparation method of the above-mentioned photovoltaic diamond wire, the photovoltaic diamond wire baseline is subjected to magnetron sputtering TiN (titanium nitride) treatment to obtain a TiN coated baseline; the TiN coated baseline is then subjected to a specific annealing treatment, and by controlling the time and temperature of the annealing treatment, the transformation of α-TiN to β-TiN crystal form can be promoted, and the densification degree of the functional coating on the surface of the covering can be improved, thereby making the photovoltaic diamond wire have higher strength and electrochemical corrosion resistance.

[0012] In some embodiments, the annealing temperature is 650° C. to 750° C.;

[0013] And / or, the annealing treatment time is 5h~7h.

[0014] In some embodiments, the magnetron sputtering TiN process comprises the following steps:

[0015] The baseline was placed in a magnetron sputtering device equipped with a titanium target, the titanium target was turned on, and argon gas was introduced to control the ignition pressure to 4×10 -3 Pa~8×10 -3 Pa, after the titanium target is ignited, nitrogen is introduced to react.

[0016] In some embodiments, the reaction time is 0.5h~5h.

[0017] In some of the embodiments, in the step of magnetron sputtering TiN treatment, the flow rate of the argon gas is 75 SCCM to 150 SCCM;

[0018] And / or, in the step of magnetron sputtering TiN treatment, the flow rate of nitrogen gas is 1 SCCM to 50 SCCM.

[0019] In some of the embodiments, in the step of magnetron sputtering TiN treatment, the temperature of the baseline is 150° C. to 650° C.;

[0020] And / or, in the step of magnetron sputtering TiN treatment, the temperature of the titanium target is 75°C to 150°C.

[0021] In some embodiments, the baseline includes any one of a tungsten diamond wire and a high carbon steel diamond wire.

[0022] In some of the embodiments, before the base line is subjected to magnetron sputtering TiN treatment, the base line is also subjected to ultrasonic cleaning treatment and drying in sequence.

[0023] On the other hand, the present application further provides a diamond wire, comprising a base line and a β-TiN coating layer coating the base line.

[0024] In some of the embodiments, the diamond wire is prepared by the above-mentioned method for preparing the photovoltaic diamond wire. DETAILED DESCRIPTION

[0025] References to embodiments of the present application will now be provided in detail, one or more examples of which are described below. Each example is provided as an explanation rather than a limitation of the present application. In fact, it will be apparent to those skilled in the art that various modifications and variations may be made to the present application without departing from the scope or spirit of the present application. For example, a feature described or described as part of one embodiment may be used in another embodiment to produce a further embodiment.

[0026] Therefore, it is intended that the present application covers such modifications and variations that fall within the scope of the appended claims and their equivalents. Other objects, features and aspects of the present application are disclosed in or are apparent from the following detailed description. It will be appreciated by those of ordinary skill in the art that this discussion is merely a description of exemplary embodiments and is not intended to limit the broader aspects of the present application.

[0027] The term "comprises", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements defined by the sentence "comprising one..." do not exclude the presence of other identical elements in the process, method, article or equipment including the elements. The indefinite articles "a kind of" and "one" before the elements or components of the present application are not restrictive to the quantity requirements (i.e., the number of occurrences) of the elements or components. Therefore, "one" or "a kind of" should be interpreted as including one or at least one, and the elements or components in the singular form also include the plural form, unless the number obviously refers only to the singular form. The meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0028] The weight of the relevant components mentioned in the description of the embodiments of the present invention may not only refer to the specific content of each component, but also indicate the weight ratio between the components. Therefore, as long as the content of the relevant components is proportionally enlarged or reduced according to the description of the embodiments of the present invention, it is within the scope disclosed in the description of the embodiments of the present invention. Specifically, the weight described in the description of the embodiments of the present invention may be a mass unit known in the chemical industry such as μg, mg, g, kg, etc.

[0029] Except as shown in the operating examples or otherwise indicated, all numbers used in the specification and claims to indicate the amount of ingredients, physicochemical properties, etc. are understood to be adjusted by the term "about" in all cases. For example, therefore, unless otherwise indicated, the numerical parameters listed in the above specification and the attached claims are approximate values, and those skilled in the art can use the teachings disclosed herein to seek to obtain the desired properties and appropriately change these approximate values. The use of numerical ranges expressed as endpoints includes all numbers within the range and any range within the range, for example, 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4 and 5, etc.

[0030] As shown in the background technology, according to the different busbar materials, photovoltaic diamond wires are mainly divided into high-carbon steel wire diamond wires (also known as carbon steel diamond wires or carbon steel wires) and tungsten wire diamond wires (also known as tungsten wire wires), among which tungsten wire diamond wires are gradually becoming mainstream. The preparation process of traditional diamond cutting wires uses the electrodeposition method to regulate the electrolyte composition, and nickel is plated on the metal wire to increase the strength of the diamond cutting wire and reduce the diameter of the wire. However, the electrodeposition technology is prone to uneven thickness, the preparation of the electrolyte is cumbersome and costly, and the use of acidic solutions is prone to production safety problems.

[0031] Magnetron sputtering is a process in which incident ions (Ar + ) impacts the target material, so that the atoms (molecules) on the surface of the target material gain enough energy to break away from the target material and finally deposit on the surface of the substrate; this is a physical vapor deposition method with a fast deposition rate and good uniformity of the deposited film.

[0032] Based on this, an embodiment of the present application provides a method for preparing a diamond wire for photovoltaic use, the method comprising steps S10 to S30.

[0033] Step S10: providing a baseline.

[0034] Step S20: performing magnetron sputtering TiN treatment on the baseline in step S10 to obtain a TiN-coated baseline.

[0035] Specifically, the magnetron sputtering TiN treatment in step S20 includes placing the baseline in a magnetron sputtering device equipped with a titanium target, turning on the titanium target, and introducing argon gas to control the ignition pressure to 4×10 -3 Pa~8×10 -3 Pa, after the titanium target is ignited, nitrogen is introduced to react.

[0036] It can be understood that controlling the ignition pressure of the above-mentioned vacuum chamber within the above-mentioned specific range can well activate the atoms on the surface of the titanium target to form a stable plasma environment, so that the film layer grows towards a more dense structure, and at the same time can enhance the adhesion between the film layer and the substrate.

[0037] In some embodiments, the reaction time is 0.5 h to 5 h.

[0038] It is understood that when a numerical range is disclosed herein, the above range is considered continuous and includes the minimum and maximum values ​​of the range, as well as every value between such minimum and maximum values. Further, when a range refers to an integer, every integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe features or characteristics, the ranges can be combined. In other words, unless otherwise indicated, all ranges disclosed herein should be understood to include any and all subranges included therein.

[0039] The reaction time is 0.5h~5h, and the values ​​include the minimum and maximum values ​​of the range, and each value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and the following point values: 0.5h, 1h, 1.5h, 2h, 2.5h, 3h, 3.5h, 4h, 4.5h, 5h.

[0040] The above reaction time can control the coating thickness and prepare a hard titanium nitride coating with uniform thickness.

[0041] In some embodiments, the coating has a thickness of 0.1 μm to 5 μm.

[0042] In some of the embodiments, in the above magnetron sputtering TiN treatment step, the flow rate of the argon gas is 75 SCCM-150 SCCM.

[0043] The flow rate of the argon gas is between 75 SCCM and 150 SCCM, and the values ​​include the minimum and maximum values ​​in the range, as well as every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and the following point values: 75 SCCM, 80 SCCM, 85 SCCM, 90 SCCM, 95 SCCM, 100 SCCM, 105 SCCM, 110 SCCM, 115 SCCM, 120 SCCM, 125 SCCM, 130 SCCM, 135 SCCM, 140 SCCM, and 150 SCCM.

[0044] In some embodiments, in the step of magnetron sputtering TiN treatment, the flow rate of the nitrogen gas is 1 SCCM to 50 SCCM.

[0045] The flow rate of the above-mentioned nitrogen is between 1 SCCM and 50 SCCM, and the values ​​include the minimum and maximum values ​​of the range, and every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and the following point values: 1 SCCM, 5 SCCM, 10 SCCM, 15 SCCM, 20 SCCM, 25 SCCM, 30 SCCM, 35 SCCM, 40 SCCM, 45 SCCM, and 50 SCCM.

[0046] It can be understood that controlling the flow rate of the nitrogen gas introduced above within the above specific range can promote the growth of the titanium nitride film in the (200) preferred orientation, thereby increasing the crystallinity and densification, and further enhancing the mechanical properties.

[0047] In some of the embodiments, in the step of magnetron sputtering TiN treatment, the temperature of the baseline is 150°C to 650°C.

[0048] The temperature of the above baseline is 150°C to 650°C, and the values ​​include the minimum and maximum values ​​of the range, as well as every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiment and the following point values: 150°C, 155°C, 160°C, 165°C, 170°C, 175°C, 180°C, 185°C, 190°C, 195°C, 200°C, 205°C, 210°C, 2 15℃、220℃、225℃、230℃、235℃、240℃、245℃、250℃、255℃、260℃、265℃、270℃、275℃、280℃、285℃、290℃、295℃、300℃、305℃、310℃、315℃、320℃、325℃、330℃、335℃、340℃、345℃、350℃、360℃ , 365℃, 370℃, 375℃, 380℃, 385℃, 390℃, 395℃, 400℃, 405℃, 410℃, 415℃, 420℃, 425℃, 430℃, 435℃, 440℃, 445℃, 450℃, 455℃, 460℃, 470℃, 475℃, 480℃, 485℃, 490℃, 495℃, 500℃, 505℃, 51 0℃, 515℃, 520℃, 525℃, 530℃, 535℃, 540℃, 545℃, 550℃, 555℃, 560℃, 565℃, 570℃, 575℃, 580℃, 585℃, 590℃, 595℃, 600℃, 605℃, 610℃, 615℃, 620℃, 625℃, 630℃, 635℃, 640℃, 645℃, 650℃.

[0049] It can be understood that controlling the temperature of the above baseline within the above specific range can affect the nucleation and growth process of the deposited atoms on the film surface during the sputtering process, thereby affecting the structure and performance of the film. Controlling the deposition temperature can make the film grow fully on the (200) crystal plane and increase the grain size of the film, reduce the internal defect density of the film, reduce the local disorder and internal stress, and improve the mechanical properties.

[0050] In some of the embodiments, during the magnetron sputtering TiN treatment step, the temperature of the titanium target is 75°C to 150°C.

[0051] The temperature of the titanium target is between 75°C and 150°C, and the values ​​include the minimum and maximum values ​​in the range, as well as every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and the following point values: 75°C, 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, 130°C, 135°C, 140°C, 145°C, and 150°C.

[0052] It can be understood that controlling the temperature of the titanium target within the above-mentioned specific range can reduce the thermal stress generated during the growth of the thin film, thereby improving the film-substrate bonding strength.

[0053] Step S30: annealing the TiN-coated wire at 600° C. to 950° C. for 1 h to 10 h to prepare a photovoltaic diamond wire.

[0054] The temperature of the annealing treatment is 600°C ~ 950°C, and the values ​​include the minimum and maximum values ​​of the range, and each value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiment and the following point values: 600°C, 605°C, 610°C, 615°C, 620°C, 625°C, 630°C, 635°C, 640°C, 645°C, 650°C, 655°C, 660°C, 665°C, 670°C, 675°C, 680°C, 685°C, 690°C, 695°C, 700°C, 705°C, 710°C, ℃, 715℃, 720℃, 725℃, 730℃, 735℃, 740℃, 745℃, 750℃, 755℃, 760℃, 765℃, 770℃, 775℃, 780℃, 785℃, 790℃, 795℃, 800℃, 805℃, 810℃, 815℃, 820℃, 825℃, 830℃, 835℃, 840℃, 845℃, 850℃, 855℃, 860℃, 865℃, 870℃, 875℃, 880℃, 885℃, 890℃, 895℃, 900℃.

[0055] The annealing time is 1h~10h, and the values ​​include the minimum and maximum values ​​of the range, and each value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and the following point values: 1h, 1.5h, 2h, 2.5h, 3h, 3.5h, 4h, 4.5h, 5h, 5.5h, 6h, 6.5h, 7h, 7.5h, 8h, 8.5h, 9h, 9.5h, and 10h.

[0056] In some embodiments, the annealing treatment is performed at a temperature of 650° C. to 750° C.

[0057] In a specific example, the temperature of the annealing process is 700°C.

[0058] In some embodiments, the annealing time is 5h~10h.

[0059] In some embodiments, the annealing time is 5h~7h.

[0060] Furthermore, by controlling the annealing conditions within the preferred range, the strength and electrochemical corrosion resistance of the photovoltaic diamond wire are better.

[0061] In a specific example, the annealing treatment time is 6 hours.

[0062] In some of the embodiments, before the base line is subjected to magnetron sputtering TiN treatment, the base line is also subjected to ultrasonic cleaning treatment and drying in sequence.

[0063] In some embodiments, the drying is performed in a nitrogen atmosphere at 100° C. to 110° C. for 30 min to 120 min.

[0064] In some embodiments, the baseline includes any one of a tungsten diamond wire and a high carbon steel diamond wire.

[0065] In the preparation method of the above-mentioned photovoltaic diamond wire, the photovoltaic diamond wire baseline is subjected to magnetron sputtering TiN treatment to obtain a TiN-coated baseline; the TiN-coated baseline is then subjected to a specific annealing treatment, and by controlling the time and temperature of the annealing treatment, the transformation of α-TiN to β-TiN crystal form can be promoted, and the densification degree of the functional coating on the surface of the covering can be improved, thereby making the photovoltaic diamond wire have higher strength and electrochemical corrosion resistance.

[0066] One embodiment of the present application further provides a diamond wire, comprising a base line and a β-TiN coating layer coating the base line.

[0067] In some of the embodiments, the photovoltaic diamond wire is prepared by the above-mentioned preparation method of the diamond wire.

[0068] The diamond wire has both high strength and electrochemical corrosion resistance.

[0069] The following is a detailed description in conjunction with specific examples. The following examples do not include other components except for inevitable impurities unless otherwise specified. The reagents and instruments used in the examples are conventionally selected in the art unless otherwise specified. The experimental methods for which specific conditions are not specified in the examples are implemented according to conventional conditions, such as the conditions described in the literature, books, or methods recommended by the manufacturer.

[0070] Example 1

[0071] Step 1: Ultrasonic clean the tungsten diamond wire baseline with anhydrous ethanol and water and dry it. Place the cleaned tungsten diamond wire baseline in a nitrogen atmosphere oven and bake it for 30 minutes at a baking temperature of 100°C.

[0072] Step 2: After evenly winding the tungsten diamond wire base line on the magnetron sputtering bracket, place the bracket into the vacuum chamber of the magnetron sputtering coating machine equipped with a titanium target, turn on the vacuum pump group to evacuate the vacuum chamber, and heat the tungsten diamond wire base line on the bracket to 450°C, and the target material temperature to 100°C.

[0073] Step 3: Introduce 100 SCCM of argon gas to control the starting pressure of the vacuum chamber at 7×10 -3 Pa, after the titanium target is ignited, 6SCCM nitrogen is introduced as the reaction gas, the power of the magnetron sputtering power supply is adjusted to 5KW, the support rotation speed is 2.5 r / min, and the magnetron sputtering treatment time is 1h.

[0074] Step 4: After the coating is completed, turn off the vacuum pump group of the magnetron sputtering coating machine, wait until the pressure in the vacuum chamber is balanced with the atmospheric pressure, and the temperature of the vacuum chamber drops below 50°C before taking out the substrate.

[0075] Step 5: Anneal the tungsten diamond wire base line coated with titanium nitride at 700° C. and vacuum for 2 hours to prepare a tungsten diamond wire.

[0076] Example 2

[0077] The preparation method of the photovoltaic diamond wire in Example 2 is basically the same as that in Example 1, except that the annealing temperature is 600°C.

[0078] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0079] Example 3

[0080] The preparation method of the photovoltaic diamond wire in Example 3 is basically the same as that in Example 1, except that the annealing temperature is 800°C.

[0081] Other conditions and parameters are the same as those in Example 1. Please see Table 2 for specific test results.

[0082] Example 4

[0083] The preparation method of the photovoltaic diamond wire in Example 4 is basically the same as that in Example 1, except that the annealing temperature is 950° C. and the annealing time is 1 hour.

[0084] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0085] Example 5

[0086] The preparation method of photovoltaic diamond wire in Example 5 is basically the same as that in Example 1, except that during the magnetron sputtering process, the baseline temperature is 150° C., the titanium target temperature is 75° C., and the annealing time is 3 h.

[0087] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0088] Example 6

[0089] The preparation method of photovoltaic diamond wire in Example 6 is basically the same as that in Example 1, except that during the magnetron sputtering process, the baseline temperature is 300° C., the titanium target temperature is 125° C., and the annealing time is 5 h.

[0091] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0092] Example 7

[0093] The preparation method of photovoltaic diamond wire in Example 7 is basically the same as that in Example 1, except that during the magnetron sputtering process, the baseline temperature is 650° C., the titanium target temperature is 150° C., and the annealing time is 10 h.

[0094] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0095] Example 8

[0096] The preparation method of photovoltaic diamond wire in Example 8 is basically the same as that in Example 1, except that the flow rate of nitrogen during the magnetron sputtering treatment is 1 SCCM, and the magnetron sputtering treatment time is 3 h.

[0097] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0098] Example 9

[0099] The preparation method of photovoltaic diamond wire in Example 9 is basically the same as that in Example 1, except that the flow rate of nitrogen during the magnetron sputtering treatment is 50 SCCM and the magnetron sputtering treatment time is 5 h.

[0100] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0101] Example 10

[0102] The preparation method of the photovoltaic diamond wire in Example 10 is basically the same as that in Example 1, except that the magnetron sputtering treatment time is 0.1 h.

[0103] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0104] Embodiment 11

[0105] The preparation method of photovoltaic diamond wire in Example 11 is basically the same as that in Example 1, except that the magnetron sputtering treatment time is 6 hours.

[0106] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0107] Comparative Example 1

[0108] The preparation method of the photovoltaic diamond wire in Comparative Example 1 is basically the same as that in Example 1, except that the annealing temperature is 500°C.

[0109] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0110] Comparative Example 2

[0111] The preparation method of the photovoltaic diamond wire in Comparative Example 2 is basically the same as that in Example 1, except that the annealing temperature is 1000°C.

[0112] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0113] Comparative Example 3

[0114] The preparation method of the photovoltaic diamond wire in Comparative Example 3 is basically the same as that in Example 1, except that the annealing time is 0.5 h.

[0115] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0116] Comparative Example 4

[0117] The preparation method of the photovoltaic diamond wire in Comparative Example 4 is basically the same as that in Example 1, except that the annealing time is 11 hours.

[0118] Other conditions and parameters are the same as those in Example 1. Please see Table 1 for specific test results.

[0119] test

[0120] 1. The density of the photovoltaic diamond wires prepared in the examples and comparative examples was tested, and specifically, a scanning electron microscope (SEM) was used to observe the density of the coating.

[0121] 2. The strength of the photovoltaic diamond wires prepared in the embodiments and comparative examples was tested, specifically using a nano indenter to test the strength of the diamond wires.

[0122] 3. The electrochemical corrosion resistance of the photovoltaic diamond wires prepared in the embodiments and comparative examples was tested. Specifically, the impedance data obtained by measuring the electrochemical impedance spectroscopy (EIS) method was used to fit the impedance data to obtain various parameters in the equivalent circuit model, such as resistance, capacitance, inductance, etc. These parameters can reflect the electrochemical properties and corrosion behavior of the material, and the impedance modulus and phase angle were plotted against the frequency to analyze the corrosion resistance of the diamond wire with titanium nitride coating.

[0123] Please see Table 1 for specific test results.

[0124] Table 1

[0125]

[0126] The above test results show that the preparation method of photovoltaic diamond wire of the present application can achieve the prepared reinforced tungsten diamond wire with higher strength and electrochemical corrosion resistance, thereby improving the service life of the product.

[0127] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0128] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for preparing a photovoltaic diamond wire, characterized in that: The following steps are involved: Provide a baseline; Performing magnetron sputtering TiN treatment on the baseline to obtain a TiN-coated baseline; The TiN-coated wire is annealed at 600° C. to 950° C. for 1 h to 10 h to prepare a photovoltaic diamond wire.

2. The method for preparing a photovoltaic diamond wire according to claim 1, characterized in that: The annealing temperature is 650°C to 750°C; And / or, the annealing treatment time is 5h~7h.

3. The method for preparing a photovoltaic diamond wire according to claim 1, characterized in that: The magnetron sputtering TiN process comprises the following steps: The baseline was placed in a magnetron sputtering device equipped with a titanium target, the titanium target was turned on, and argon gas was introduced to control the ignition pressure to 4×10 -3 Pa~8×10 -3 Pa, after the titanium target is ignited, nitrogen is introduced to react.

4. The method for preparing a photovoltaic diamond wire according to claim 3, characterized in that: The reaction time is 0.5h~5h.

5. The method for preparing a photovoltaic diamond wire according to claim 3, characterized in that: In the step of magnetron sputtering TiN treatment, the flow rate of the argon gas is 75 SCCM to 150 SCCM; And / or, in the step of magnetron sputtering TiN treatment, the flow rate of nitrogen gas is 1 SCCM to 50 SCCM.

6. The method for preparing a photovoltaic diamond wire according to claim 3, characterized in that: In the step of magnetron sputtering TiN treatment, the temperature of the baseline is 150° C. to 650° C.; And / or, in the step of magnetron sputtering TiN treatment, the temperature of the titanium target is 75°C to 150°C.

7. The method for preparing a photovoltaic diamond wire according to any one of claims 1 to 6, characterized in that: The baseline includes any one of a tungsten diamond wire and a high-carbon steel diamond wire.

8. The method for preparing a photovoltaic diamond wire according to any one of claims 1 to 6, characterized in that: Before the base line is subjected to magnetron sputtering TiN treatment, the method further includes the steps of sequentially performing ultrasonic cleaning treatment and drying on the base line.

9. A diamond wire, characterized in that: The invention comprises a base line and a β-TiN covering layer covering the base line.

10. The diamond wire according to claim 9, characterized in that The diamond wire is prepared by the method for preparing a diamond wire for photovoltaic use according to any one of claims 1 to 8.

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