Transient enhancement buffer and gamma voltage generation system

Abstract

The invention provides a transient enhancement buffer and a gamma voltage generation system, and the transient enhancement buffer comprises an input module, an output module and a transient enhancement module which are sequentially connected. The input module is used for acquiring an amplified signal; the transient enhancement module generates a pull-up coupling signal and a pull-down coupling signal based on the fluctuation of the output signal; and the output module performs coupling enhancement on the amplified signal through the pull-up coupling signal and the pull-down coupling signal, so that the stability of the output signal is improved. Meanwhile, the gamma voltage generating system comprises an amplitude adjusting device, a region dividing device, a linear output device, a high-nonlinearity output device and a low-nonlinearity output device, the maximum and minimum values of the voltage are determined through the amplitude adjusting device, and voltage values of three regions are output through the linear output device, the high-nonlinearity output device and the low-nonlinearity output device. Therefore, the output voltage value is highly overlapped with the actual voltage value distribution of the gamma voltage, so that the accuracy is improved.

Description

Technical Field

[0001] The present application belongs to the technical field of gamma voltage, and relates to a buffer, and in particular to a transient enhancement buffer and a gamma voltage generation system. Background Art

[0002] In order to meet the visual characteristics of the human eye, the display usually needs to correct the brightness of the pixel through the gamma voltage when displaying. Among them, the gamma voltage generation system needs to provide a stable gamma voltage for the display driving system to achieve a good display effect.

[0003] In existing gamma voltage generation systems, the gamma voltage generated is generally output by a buffer to improve the stability of the output gamma voltage. As the requirements for the resolution and frame rate of displays continue to increase, the requirements for the stability and response speed of the buffer of the gamma voltage generation system also continue to increase.

[0004] Therefore, how to avoid designing a new type of buffer with strong stability and fast response speed is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0005] The purpose of the present application is to provide a transient enhancement buffer and a gamma voltage generation system, which are used to solve the problem in the prior art that the stability of the buffer is not sufficient to meet the actual needs of the display.

[0006] In a first aspect, the present application provides a transient enhancement buffer, comprising an input module, an output module and a transient enhancement module connected in sequence;

[0007] The input module is used to amplify the input signal to obtain an amplified signal;

[0008] The transient enhancement module comprises a signal pull-up unit and a signal pull-down unit, wherein the signal pull-up unit is used to generate a pull-up coupling signal based on a feedback signal, and the signal pull-down unit is used to generate a pull-down coupling signal based on the feedback signal;

[0009] The output module includes a buffer output end and a high potential output unit and a low potential output unit respectively connected to the buffer output end, the high potential output unit is used to couple and enhance the amplified signal through the pull-up coupling signal to output a high potential enhanced signal, the low potential output unit is used to couple and enhance the amplified signal through the pull-down coupling signal to output a low potential enhanced signal, the buffer output end is used to output an output signal based on the high potential enhanced signal and the low potential enhanced signal, and feed the output signal back to the transient enhancement module as the feedback signal.

[0010] In the present application, the fluctuation of the output signal is fed back through the transient enhancement module, and a pull-up coupling signal and a pull-down coupling signal are generated, so that the output module adjusts the output signal to output a stable voltage, which is beneficial to improving the stability of the transient enhancement buffer.

[0011] In one embodiment of the present application, the signal pull-up unit includes a pull-up amplifier circuit and a pull-up signal conversion circuit connected to each other, the pull-up amplifier circuit is used to amplify the feedback signal to obtain a pull-up feedback signal, and the pull-up signal conversion circuit is used to convert the pull-up feedback signal into a pull-up current signal as a pull-up coupling signal;

[0012] The signal pull-down unit includes a connected pull-down amplifier circuit and a pull-down signal conversion circuit. The pull-down amplifier element is used to amplify the feedback signal to obtain a pull-down feedback signal. The pull-down signal conversion circuit is used to convert the pull-down feedback signal into a pull-down current signal as a pull-down coupling signal.

[0013] In one embodiment of the present application, the pull-up amplifier circuit includes a pull-up MOS tube, the pull-up signal conversion circuit includes a pull-up capacitor, the source of the pull-up MOS tube is connected to the buffer output end for receiving the feedback signal, the drain of the pull-up MOS tube is connected to one end of the pull-up capacitor, the gate of the pull-up MOS tube inputs a pull-up turn-on signal, and the other end of the pull-up capacitor is connected to the input end of the high potential output unit;

[0014] The pull-down amplifier circuit includes a pull-down MOS tube, and the pull-down signal conversion circuit includes a pull-down capacitor. The source of the pull-down MOS tube is connected to the buffer output end for receiving the feedback signal, the drain of the pull-down MOS tube is connected to one end of the pull-down capacitor, and the gate of the pull-down MOS tube inputs a pull-down turn-on signal; the other end of the pull-down capacitor is connected to the input end of the high potential output unit.

[0015] In one embodiment of the present application, the signal pull-up unit also includes a pull-up bias circuit connected to the pull-up amplifier circuit, and the pull-up bias circuit is used to provide a bias operating voltage for the pull-up amplifier circuit; the signal pull-down unit also includes a pull-down bias circuit connected to the pull-down amplifier circuit, and the pull-down bias circuit is used to provide a bias operating voltage for the pull-down amplifier circuit.

[0016] In one embodiment of the present application, the high potential output unit includes a high potential signal enhancement circuit and a high potential Miller compensation circuit connected to the high potential signal enhancement circuit, the high potential signal enhancement circuit is used to perform coupling enhancement on the amplified signal through the pull-up coupling signal to obtain a high potential enhanced signal, and the high potential Miller compensation circuit is used to perform signal compensation on the high potential signal enhancement circuit;

[0017] The low-potential output unit includes a low-potential signal enhancement circuit and a low-potential Miller compensation circuit connected to the low-potential signal enhancement circuit. The low-potential signal enhancement circuit is used to couple and enhance the amplified signal through the pull-down coupling signal to obtain a low-potential enhanced signal. The low-potential Miller compensation circuit is used to perform signal compensation on the low-potential signal enhancement circuit.

[0018] In one embodiment of the present application, the high-potential signal enhancement circuit includes a high-potential output MOS tube, the gate of the high-potential output MOS tube is respectively connected to the output end of the high-potential output unit and the output end of the signal pull-up unit, the drain of the high-potential output MOS tube serves as the output end of the high-potential signal enhancement circuit, and is connected to the output end of the low-potential signal enhancement circuit, and the source of the high-potential output MOS tube is connected to the high-potential end; the high-potential Miller compensation circuit includes a high-potential Miller compensation capacitor and a high-potential Miller compensation resistor sequentially connected between the gate and the drain of the high-potential output MOS tube;

[0019] The low-potential signal enhancement circuit includes a low-potential output MOS tube, the gate of the low-potential output MOS tube is connected to the output end of the low-potential output unit and the output end of the signal pull-up unit, the drain of the low-potential output MOS tube serves as the output end of the low-potential signal enhancement circuit, and is connected to the output end of the high-potential signal enhancement circuit, and the source of the low-potential output MOS tube is connected to the low-potential end; the low-potential Miller compensation circuit includes a low-potential Miller compensation capacitor and a low-potential Miller compensation resistor which are sequentially connected between the gate and drain of the low-potential output MOS tube.

[0020] In one embodiment of the present application, the input module includes: a high potential differential circuit and a high potential current mirror connected to the high potential differential circuit, a low potential differential circuit and a low potential current mirror connected to the low potential differential circuit;

[0021] The high potential differential circuit is used to perform common mode suppression on the input signal in the high potential input signal range and output a high potential differential signal, and the high potential current mirror is used to amplify based on the high potential differential signal and generate a stable high potential amplified signal; the low potential differential circuit is used to perform common mode suppression on the input signal in the low potential input signal range and output a low potential differential signal, and the low potential current mirror is used to amplify based on the low potential differential signal and generate a stable low potential amplified signal;

[0022] The amplified signal in the high potential output unit is a high potential amplified signal, and the amplified signal in the low potential output unit is a low potential amplified signal.

[0023] In one embodiment of the present application, the input module also includes a superposition circuit connected between the high-potential current mirror and the low-potential current mirror, the superposition circuit includes a current superposition sub-circuit and a floating current source, the floating current source is used to provide a constant current for the high-potential current mirror and the low-potential current mirror, and the current superposition sub-circuit controls the static current of the high-potential MOS tube and the low-potential MOS tube to realize the high-potential amplified signal as the amplified input signal of the high-potential MOS tube, and the low-potential amplified signal as the amplified input signal of the low-potential MOS tube.

[0024] In a second aspect, the present application provides a gamma voltage generating system, comprising an amplitude adjustment device and a region dividing device connected to each other, and a linear output device, a high nonlinear output device and a low nonlinear output device respectively connected to the region dividing device;

[0025] The amplitude adjustment device is used to generate a high amplitude voltage and a low amplitude voltage by performing voltage division and amplitude modulation based on the system input signal; the area division device is used to obtain a regional input signal by performing voltage division based on the high amplitude voltage and the low amplitude voltage, and to perform amplitude modulation on the regional input signal to generate a high linear voltage and a low linear voltage; the linear output device is used to obtain a linear input signal by performing voltage division based on the high linear voltage and the low linear voltage, and to generate at least one linear voltage based on the linear input signal; the high nonlinear output device is used to obtain a high nonlinear area signal by performing voltage division based on the high amplitude voltage and the high linear voltage, and to perform amplitude modulation on the high nonlinear area signal to generate at least one high nonlinear voltage; the low nonlinear output device is used to obtain a low nonlinear area signal by performing voltage division based on the low linear voltage and the low amplitude voltage, and to perform amplitude modulation on the low nonlinear area signal to generate at least one low nonlinear voltage;

[0026] The amplitude adjustment device, the area division device, the linear output device, the high nonlinear output device and the low nonlinear output device all include at least one transient enhancement buffer as described above; the high amplitude voltage, the low amplitude voltage, the high linear voltage, all the low linear voltages, all the linear voltages, all the high nonlinear voltages and the low nonlinear voltages are buffered and isolated and outputted by the transient enhancement buffer.

[0027] In the present application, a two-stage adjustment method is provided in which the maximum and minimum values ​​of the gamma voltage are first determined by an amplitude adjustment device, and then the intermediate voltage is regulated, and an output structure in which a linear output device, a high nonlinear output device and a low nonlinear output device output voltage values ​​in three regions, namely, a high nonlinear region, a linear region and a low nonlinear region, is used. This makes the voltage value output by the gamma voltage generating system highly coincident with the voltage value distribution of the gamma voltage. When applied to a display, the brightness of the display is more in line with the human sensory system, which is beneficial to improving the display effect of the display.

[0028] In one embodiment of the present application, the amplitude adjustment device further includes an amplitude adjustment resistor and a high amplitude voltage selector and a low amplitude voltage selector respectively connected to the amplitude adjustment resistor, the amplitude adjustment resistor is used to divide the system input signal to generate an amplitude adjustment signal, the high amplitude voltage selector is used to modulate the amplitude of the amplitude adjustment signal to generate the high amplitude voltage, and the low amplitude voltage selector is used to modulate the amplitude of the amplitude adjustment signal to generate the low amplitude voltage;

[0029] The area division device further includes an area division resistor and a high linear voltage selector and a low linear voltage selector respectively connected to the area division resistor, the area division resistor is used to generate the area input signal by voltage division based on the high amplitude voltage and the low amplitude voltage, the high linear voltage selector is used to perform amplitude modulation based on the area input signal to generate the high linear voltage, and the low linear voltage selector is used to perform amplitude modulation based on the area input signal to generate the low linear voltage;

[0030] The linear output device further comprises a linear output resistor, the linear output resistor is used to divide the voltage based on the high linear voltage and the low linear voltage to generate a linear input signal, and to generate at least one linear voltage based on the linear input signal;

[0031] The high nonlinear output device further comprises a high nonlinear output resistor and at least one high nonlinear voltage selector connected to the high nonlinear output resistor, wherein the high nonlinear output resistor is used to divide the voltage based on the high amplitude voltage and the high linear voltage to generate the high nonlinear region signal, and the high nonlinear voltage selector is used to perform amplitude modulation based on the high nonlinear region signal to generate the high nonlinear voltage;

[0032] The low nonlinear output device also includes a low nonlinear output resistor and at least one low nonlinear voltage selector connected to the low nonlinear output resistor, the low nonlinear output resistor is used to divide the voltage based on the low amplitude voltage and the low linear voltage to generate the low nonlinear region signal, and the low nonlinear voltage selector is used to perform amplitude modulation based on the low nonlinear region signal to generate the low nonlinear voltage.

[0033] As described above, the present application provides a transient enhancement buffer and a gamma voltage generation system, which outputs a pull-up coupling signal and a pull-down coupling signal for characterizing the fluctuation of the output signal through a transient enhancement module, feeds back the fluctuation of the output signal, and transmits it to the output module, so that the output module adjusts the output signal based on the fluctuation of the output signal, thereby outputting a stable voltage. At the same time, the gamma voltage generation system uses a two-stage adjustment method and a three-region output structure to make the output voltage value more accurate, and highly coincides with the voltage value distribution of the actual gamma voltage, which is beneficial to improving the display effect of the display. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 Shown is a structural schematic diagram of a transient enhancement buffer described in an embodiment of the present application.

[0035] Figure 2 Shown is a schematic diagram of the circuit structure of a transient enhancement buffer described in an embodiment of the present application.

[0036] Figure 3 Shown is a schematic diagram of a small signal model of an output module of a transient enhancement buffer described in an embodiment of the present application.

[0037] Figure 4 Shown is a schematic diagram of closed-loop response simulation results of a transient enhancement buffer described in an embodiment of the present application.

[0038] Figure 5 Shown is a schematic diagram comparing step response simulation results of a transient enhancement buffer described in an embodiment of the present application and a conventional buffer.

[0039] Figure 6 Shown is a schematic diagram of 5V and 10V step response simulation results of a transient enhancement buffer described in an embodiment of the present application.

[0040] Figure 7 Shown is a circuit structure schematic diagram of a gamma voltage generating system described in an embodiment of the present application.

[0041] Figure 8 Shown is a schematic diagram of simulation results of a gamma voltage generating system described in an embodiment of the present application.

[0042] Component number description

[0043] 100 Transient Enhancement Buffer

[0044] 110 Input Module

[0045] 120 Output Module

[0046] 130 Transient Enhancement Module

[0047] 111 High potential input unit

[0048] 112 Low potential input unit

[0049] 121 High potential output unit

[0050] 122 Low potential output unit

[0051] 123 Buffer output

[0052] 131 signal pull-up unit

[0053] 132 signal pull-down unit

[0054] 200 Gamma Voltage Generation System

[0055] 210 Amplitude adjustment device

[0056] 220 Area Division Device

[0057] 230 Highly nonlinear output device

[0058] 240 Linear output device

[0059] 250 Low nonlinear output device

[0060] 211 Amplitude adjustment resistor

[0061] 212 High Amplitude Voltage Selector

[0062] 213 Low Amplitude Voltage Selector

[0063] 221 Area Division Resistors

[0064] 222 High Linear Voltage Selector

[0065] 223 Low Linear Voltage Selector

[0066] 231 High non-linear output resistance

[0067] 232 High Non-Linear Voltage Selector

[0068] 241 Linear output resistance

[0069] 251 Low nonlinear output resistance

[0070] 252 Low Nonlinear Voltage Selector DETAILED DESCRIPTION

[0071] The following describes the embodiments of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0072] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present application, and thus the drawings only show components related to the present application rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed at will, and the component layout may also be more complicated.

[0073] The following embodiments of the present application provide a transient enhancement buffer and a gamma voltage generation system, wherein the transient enhancement buffer compensates the output voltage of the buffer through a transient enhancement module, reduces the fluctuation of the output voltage, and improves the stability of the output voltage. The transient enhancement buffer provided by the present application has a fast response speed, which solves the problem that the buffer in the prior art is insufficient to meet the needs of the display. At the same time, the gamma voltage generation system provided by the present application completes the amplitude adjustment of the gamma voltage by first generating a high-amplitude voltage and a low-amplitude voltage, and then further performs precise adjustment through a linear output module, a high nonlinear output module, and a low nonlinear output module. The gamma voltage is generated by a two-stage adjustment and a three-region output adjustment method, so that the generated gamma voltage has higher accuracy, which is conducive to the display to achieve a better display effect.

[0074] The principles and implementation methods of a transient enhancement buffer and a gamma voltage generation system of the present embodiment will be described in detail below in conjunction with the accompanying drawings so that those skilled in the art can understand the transient enhancement buffer and the gamma voltage generation system of the present embodiment without creative work.

[0075] The following embodiments of the present application provide a transient enhancement buffer, including but not limited to a scenario where a gamma voltage is output stably and quickly when applied to a gamma voltage generation system. The following description will be given by taking the transient enhancement buffer as an example of inputting a gamma voltage and outputting it stably. It should be noted that the transient enhancement buffer provided in the following embodiments of the present application can also be used in other application scenarios, which are not specifically limited in the present application.

[0076] like Figure 1 As shown, the first embodiment of the present invention provides a transient enhancement buffer 100, comprising: an input module 110, an output module 120 and a transient enhancement module 130 connected in sequence. Among them, the input module 110 is used to amplify the input signal to obtain an amplified signal. The output module 120 is used to output a voltage as an output signal through a buffer output terminal 123. Specifically, the output module 120 includes a buffer output terminal 123, and a high potential output unit 121 and a low potential output unit 122 both connected to the buffer output terminal 123. The high potential output unit 121 is used to obtain a high potential enhancement signal based on the amplified signal, and the low potential output unit 122 is used to obtain a low potential enhancement signal based on the amplified signal. The output terminals of the high potential output unit 121 and the low potential output unit 122 are connected to lead out the buffer output terminal 123. The buffer output terminal 123 is used to obtain an output signal based on the high potential enhancement signal and the low potential enhancement signal and output the signal. It should be noted that the output signal is actually a voltage signal. The transient enhancement module 130 is used to perform feedback compensation on the output signal output by the output module 120 so that the transient enhancement buffer 100 finally outputs a stable signal. Specifically, the transient enhancement module 130 includes a signal pull-up unit 131 and a signal pull-down unit 132. The signal pull-up unit 131 is connected to the buffer output terminal 123, generates a pull-up coupling signal based on the output signal, and transmits the pull-up coupling signal to the high-potential output unit 121 for feedback compensation of the output signal. Similarly, the signal pull-down unit 132 is connected to the buffer output terminal 123, generates a pull-down coupling signal based on the output signal and transmits it to the low-potential output unit 122 for feedback compensation.

[0077] Since the pull-up coupling signal and the pull-down coupling signal are generated based on the output signal and can characterize the change of the output signal, the transient enhancement module 130 feeds back the change of the output signal through the signal pull-up unit 131 and the signal pull-down unit 132, thereby enabling the high potential output unit 121 and the low potential output unit 122 to compensate the output signal and obtain a stable output voltage.

[0078] In some embodiments of the present application, Figure 2As shown, the signal pull-up unit 131 includes a pull-up signal conversion circuit, which is used to convert the voltage fluctuation of the output signal into a current signal, and input the current signal as a pull-up coupling signal to the high-potential output unit 121, and the high-potential output unit 121 compensates the output signal based on the pull-up coupling signal; similarly, the signal pull-down unit 132 includes a pull-down signal conversion circuit, which is used to convert the voltage fluctuation of the output signal into a current signal, and input the current signal as a pull-down coupling signal to the low-potential output unit 122, and the low-potential output unit 122 compensates the output signal based on the pull-down coupling signal.

[0079] Exemplarily, the pull-up signal conversion circuit includes a pull-up capacitor C1, and the pull-down signal conversion circuit includes a pull-down capacitor C2, so that the changing voltage is converted into a current signal.

[0080] Furthermore, the signal pull-up unit 131 also includes a pull-up amplifier circuit, the input end of the pull-up amplifier circuit is connected to the buffer output end 123, and the voltage fluctuation of the output signal is amplified by a preset gain value so that the pull-up capacitor C1 can capture the voltage fluctuation of the output signal and generate a corresponding pull-up coupling signal; similarly, the pull-down compensation unit 132 includes a pull-down amplifier circuit connected to the buffer output end 123, and the pull-down amplifier circuit amplifies the electrical fluctuation of the output signal so that the pull-down capacitor C2 can generate a pull-down coupling signal.

[0081] Exemplarily, the pull-up amplifier circuit includes a pull-up MOS tube MPU1, the source of which is connected to the buffer output terminal 123, the drain of which is connected to the pull-up capacitor C1, and the gate of which is input with a pull-up turn-on signal through the pull-up external port VBN2; the pull-down amplifier circuit includes a pull-down MOS tube MPD2, the source of which is connected to the buffer output terminal 123, the drain of which is connected to the pull-down capacitor C2, and the gate of which is input with a pull-down turn-on signal through the pull-down external port VBP2. Since the pull-up MOS tube MPU1 and the pull-down MOS tube MPD2 are both source input and drain output common gate connection mode, the input voltage amplification factor is large, thereby amplifying the voltage fluctuation of the output signal, so that even a small voltage change cannot be obtained by the pull-up capacitor C1 and the pull-down capacitor C2 and converted into a current signal, thereby improving the sensitivity of the transient enhancement module 130 and thereby improving the response speed of the transient enhancement buffer.

[0082] It should be noted that the gate of the pull-up MOS tube MPU1 inputs a pull-up conduction signal to control the working state of the pull-up MOS tube MPU1; the gate of the pull-down MOS tube MPD2 inputs a pull-down conduction signal to control the working state of the pull-down MOS tube MPD2.

[0083] Furthermore, in order to make the pull-up amplifier circuit and the pull-down amplifier circuit work normally, the signal pull-up unit 131 also includes a pull-up bias circuit, and the signal pull-down unit 132 includes a pull-down bias circuit to provide the bias voltage required for the pull-up amplifier circuit and the pull-down amplifier circuit to work.

[0084] Exemplarily, the pull-up bias circuit is a pull-up bias MOS tube MPU2, and the pull-down bias circuit is a pull-down bias MOS tube MPD1.

[0085] Based on this, this embodiment converts the fluctuation of the output signal into current signals through the signal pull-up unit 131 and the signal pull-down unit 132. These current signals can accurately characterize the voltage changes, thereby allowing the high-potential output unit 121 and the low-potential output unit 122 to compensate and achieve the stability of the output signal.

[0086] It should be noted that the working states of the signal pull-up unit 131 and the signal pull-down unit 132 are associated with the voltage range of the input signal. When the output signal is in the high potential output range, the signal pull-up unit 131 works normally, and when the output signal is in the low potential output range, the signal pull-down unit 132 works normally. Among them, there is an overlap between the high potential output range and the low potential output range, so at least one of the signal pull-up unit 131 and the signal pull-down unit 132 can work normally, and the signal pull-up unit 131 and the signal pull-down unit 132 can work normally at the same time.

[0087] The process of the transient enhancement module 100 feeding back the output signal change will be described in detail below.

[0088] For example, Figure 2As shown, the source of the pull-up MOS tube MPU1 is connected to the buffer output terminal 123 to receive the output signal as a feedback signal, the drain of the pull-up MOS tube MPU1 and the pull-up capacitor C1 are connected to the drain of the pull-up bias MOS tube MPU2 at one end, and the other end of the pull-up capacitor C1 is connected to the high potential output unit 121, and the source of the pull-up bias MOS tube MPU2 is connected to the high potential terminal VDD to provide the bias voltage required for the normal operation of the pull-up MOS tube MPU1. Among them, the pull-up MOS tube MPU1 amplifies the feedback signal to generate a pull-up feedback signal, and transmits it to the pull-up capacitor C1 through the drain. The pull-up capacitor C1 is connected between the pull-up MOS tube MPU1 and the input end of the high potential output unit 121, converts the pull-up feedback signal into a pull-up current signal, generates a pull-up coupling signal and transmits it to the high potential output unit 121; similarly, the signal pull-down unit 131 includes: a pull-down MOS tube MPU1, a pull-down capacitor C2 and a pull-down bias MOS tube MPU2, receives the output signal as a feedback signal through the source of the pull-down MOS tube MPU1, generates a pull-down feedback signal and transmits it to the pull-down capacitor C1 through the drain, and the pull-down capacitor C1 generates a pull-down coupling signal based on the pull-down feedback signal and transmits it to the low potential output unit 122. The high potential output unit 121 realizes compensation for the output signal based on the pull-up coupling signal, and the low potential output unit 122 realizes compensation for the output signal based on the pull-down coupling signal.

[0089] Specifically, the high potential output unit 121 includes a high potential signal enhancement circuit, which is used to obtain a high potential enhancement signal based on the amplified signal, wherein the high potential signal enhancement circuit couples and enhances the amplified signal by pulling up the coupling signal to obtain the high potential enhancement signal. The low potential output unit 122 includes a low potential signal enhancement circuit, which is used to obtain a low potential enhancement signal based on the amplified signal, wherein the low potential signal enhancement circuit couples and enhances the amplified signal by pulling down the coupling signal to obtain the low potential enhancement signal. The buffer output terminal 123 is connected between the output terminal of the high potential signal enhancement circuit and the output terminal of the low potential signal enhancement circuit, and is used to output the output signal based on the high potential enhancement signal and the low potential enhancement signal. When the output signal fluctuates, since the pull-up coupling signal and the pull-down coupling signal can characterize the change of the output signal, the generation of the high potential enhancement signal and the low potential enhancement signal is affected, and the generation of the output signal is further affected to achieve compensation of the output signal.

[0090] The following will take the high potential signal enhancement circuit including the high potential output MOSFET M19 and the low potential signal enhancement circuit including the low potential output MOSFET M20 as an example to specifically illustrate the compensation process of the output signal.

[0091] For ease of understanding, the following is exemplarily described by taking the high potential output MOS tube M19 as the first type of MOS tube and the low potential output MOS tube M20 as the second type of MOS tube, but the types of the high potential output MOS tube M19 and the low potential output MOS tube M20 are not limited thereto. Among them, the first type of MOS tube is an nmos tube, and the second type of MOS tube is a pmos tube.

[0092] like Figure 2 The high potential output MOS tube M19 and the low potential output MOS tube M20 are both connected in a common source manner with gate input and drain output, wherein the gate of the high potential output MOS tube M19 is connected to the output end of the input module 110, the source is connected to the high potential end VDD, and the drain is connected to the buffer output end 143; the gate of the low potential output MOS tube M20 is connected to the output end of the connection input module 110, the source is connected to the ground end GND, and the drain is connected to the buffer output end 143.

[0093] When the output signal of the output is undershot and drops, taking the high-potential output MOS tube M19 as an example, the fluctuation of the output signal is transmitted to the pull-up capacitor C1 through the pull-up MOS tube MPU1. At this time, the pull-up capacitor C1 generates a current signal flowing from the pull-up capacitor C1 to the pull-up MOS tube MPU1. Since the input current of the high-potential output MOS tube M19 is the sum of the current flowing through the pull-up capacitor C1 and the current flowing through the intermediate unit 120, the current signal of the pull-up capacitor C1 causes the input current of the high-potential output MOS tube M19 to drop, that is, the gate drive current of the high-potential output MOS tube M19 drops, thereby causing the gate voltage of the high-potential output MOS tube M19 to drop. According to the characteristics of the nmos tube, it can be seen that the current output by the drain of the high-potential output MOS tube M19 increases, thereby increasing the voltage of the output signal to prevent the output signal from further decreasing, so that the output voltage region is stable. Similarly, the fluctuation of the output signal causes the pull-down capacitor C2 to generate a current signal flowing from the pull-down capacitor C2 to the pull-down MOS tube MDU2, thereby causing the gate drive current of the low-potential output MOS tube M20 to decrease, and the gate voltage also decreases synchronously. According to the characteristics of the pmos tube, the current output by the drain of the low-potential output MOS tube M20 decreases, thereby stabilizing the output voltage value. It should be noted that since the working states of the signal pull-up unit 131 and the signal pull-down unit 132 are associated with the voltage value of the output signal, that is, associated with the voltage value of the feedback signal of the input signal pull-up unit 131 and the signal pull-down unit 132, there may be a situation where only the signal pull-up unit 131 or only the signal pull-down unit 132 is working, but the compensation of the output signal can still be achieved. Specifically, please refer to the aforementioned content, which will not be repeated here.

[0094] Similarly, when the output signal undershoots and drops, the high-potential output MOS tube M19 adjusts the output signal based on the pull-up coupling signal of the signal pull-up unit 131, and the low-potential output MOS tube M20 adjusts the output signal based on the pull-down coupling signal of the signal pull-down unit 132, so as to achieve stable output of the output signal. Please refer to the above content for the specific principles and processes, which will not be repeated here.

[0095] The above is an explanation of the principle of outputting a stable voltage signal in this embodiment. The small signal model of the transient enhancement module 130 and the output module 120 in this embodiment will be used below to further explain the effective compensation of the output signal by the transient enhancement module 130, so that the output signal is a stable voltage signal.

[0096] like Figure 3 As shown, the amplified signal transmitted from the input module 110 to the output module 120 is actually a current signal, which is output as a voltage signal through the high potential output MOS tube M19 and the low potential output MOS tube M20. The pull-up capacitor C1 is connected between the input end and the output end of the high potential output MOS tube M19, and is connected in parallel with the high potential output MOS tube M19. The pull-down capacitor C2 is connected between the input end and the output end of the low potential output MOS tube M20, and is connected in parallel with the low potential output MOS tube M20. When the output signal fluctuates, it is equivalent to the voltage difference between the two ends of the pull-up capacitor C1 and the pull-down capacitor C2 changing, and a current is formed on the pull-up capacitor C1 and the pull-down capacitor C2, which are respectively input through the input ends of the high potential output MOS tube M19 and the low potential output MOS tube M20, thereby compensating the output signal.

[0097] Exemplarily, taking the case where the equivalent output capacitance and output resistance at the high potential output unit 121 and the low potential output unit 122 are equal, the pull-up capacitance C1 and the pull-down capacitance are equal, and the capacitance and resistance of the high potential Miller compensation circuit and the low potential Miller compensation circuit are equal as an example, the DC gain of the output module 120 is calculated as the following equation (1); the output pole expression of the output module 120 is calculated as the following equation (2); the main pole expression of the output module 120 is calculated as the following equation (3), as shown in equations (1)-(3), respectively:

[0098] Aν(0)=(gm n ·gm 19 +gm p ·gm 20 )·R o1 R L (1)

[0099] w OUT =(gm 19 +gm 20 ) / C L (2)

[0100] w p1 =1 / R 01 [(C o1 +gm 19 R L (C c1 +C GD19 )+(g m r o ) PD C1)] (3)

[0101] Wherein, Coi and Roi (i=1, 2) are the equivalent output capacitance and equivalent output resistance of the high potential output unit 121 and the low potential output unit 122 respectively. 19 , gm 20 , gm PD , gm PU They represent the transconductance of M19, M20, MPD1, and MPU1 respectively. Z is the equivalent AC impedance of the floating current source. Since the floating current source only flows through DC signals and does not transmit AC signals, Z approaches infinity.

[0102] Among them, C GD19 It refers to the gate-drain parasitic capacitance of the output transistor. Since the size of the output transistor is relatively large, this capacitance cannot be ignored. (g m r o ) PD represents the equivalent output impedance of the signal pull-down unit 132. L is the equivalent capacitance of the buffer output terminal 123, R L is the equivalent resistance of the buffer output terminal 123.

[0103] It should be noted that the equivalent capacitance C of the buffer output terminal 123 is L The value of the pull-up capacitor C1 is not much different, and the equivalent output resistance of the high potential output unit 121 or the low potential output unit 122 is equal to the equivalent output resistance r of the signal pull-up unit 132 or the signal pull-down unit 132. o The difference is not big. Based on this, the main pole w of the transient enhancement buffer 100 provided in this embodiment is p1 Relative to the output pole w OUT The smaller , the higher the stability of the transient enhancement buffer 100 .

[0104] Preferably, the width-to-length ratio of the high-potential output MOS tube M19 is not less than 300u / 1u, and the width-to-length ratio of the low-potential output MOS tube M20 is not less than 100u / 1u, so as to increase the output current carrying capacity of the transient enhancement buffer 100, which is beneficial to the transient enhancement buffer 100.

[0105] Furthermore, if Figure 2 As shown, the high potential output unit 121 also includes a high potential Miller compensation circuit connected to the high potential signal enhancement circuit, and the high potential Miller compensation circuit is used to perform signal compensation on the high potential signal enhancement circuit to eliminate the Miller effect, improve the frequency response and switching speed of the high potential signal enhancement circuit, and enhance the performance of the transient enhancement buffer. Similarly, the low potential output unit 122 also includes a low potential Miller compensation circuit connected to the low potential signal enhancement circuit.

[0106] Exemplarily, the high-potential Miller compensation circuit includes a high-potential Miller compensation capacitor Cc1 and a high-potential Miller compensation resistor Rz1 connected in sequence between the gate and the drain of the high-potential output MOS tube M19; the low-potential Miller compensation circuit includes a low-potential Miller compensation capacitor Cc2 and a low-potential Miller compensation resistor Rz2 connected in sequence between the gate and the drain of the low-potential output MOS tube M20.

[0107] In some embodiments of the present application, Figure 2 As shown, the input module 110 includes a high potential differential circuit and a low potential differential circuit. The high potential differential circuit is used to suppress the common mode of the input signal in the high potential input signal range and output the high potential differential signal; the low potential differential circuit is used to suppress the common mode of the input signal in the low potential input signal range and output the low potential differential signal.

[0108] The high potential differential circuit and the low potential differential circuit are both connected to the same input terminal and connected to the same input signal. Since the input signal voltage ranges in which the high potential differential circuit and the low potential differential circuit can work are different, the high potential differential circuit and the low potential differential circuit are simultaneously connected to the input module, which can expand the voltage range of the input signal. Specifically, it can cover the input signal in the range from the ground terminal GND to the high potential terminal VDD, thereby improving the working range of the transient enhancement buffer 100. It should be noted that the high potential input signal range and the low potential input signal range partially overlap, so the high potential differential circuit and the low potential differential circuit may be in working state at the same time.

[0109] Exemplarily, the high potential differential circuit includes a noms differential input circuit, and the low potential differential circuit includes a poms differential input circuit.

[0110] Furthermore, the input module 110 further includes: a high potential current mirror connected to the high potential differential circuit, for amplifying the high potential differential signal and generating a stable high potential amplified signal; and a low potential current mirror connected to the low potential differential circuit, for amplifying the low potential differential signal and generating a stable low potential amplified signal. Specifically, Figure 2As shown, due to the characteristics of the current mirror, the static currents of the left and right branches of the high potential current mirror and the low potential current mirror are always equal, thereby ensuring the stability of the amplified signals output by the high potential current mirror and the low potential current mirror. It should be noted that the amplified signal coupled and enhanced by the high potential output unit 121 is a high potential amplified signal, and the amplified signal coupled and enhanced by the low potential output unit 122 is a low potential amplified signal, that is, Figure 2 As shown, the high potential amplified signal is input to the high potential output unit 121 through the gate of the high potential output MOSFET M19, and the low potential amplified signal is input to the low potential output unit 122 through the gate of the low potential output MOSFET M20.

[0111] The input module 110 also includes a superposition circuit connected between the high potential current mirror and the low potential current mirror. Figure 2 As shown, in order to control the static current of the high potential output MOSFET M19 and the low potential output MOSFET M20, the superposition circuit includes a current superposition subcircuit, and the current superposition subcircuit includes two output terminals, which are respectively connected to the gates of the high potential output MOSFET M19 and the low potential output MOSFET M20 to control the static current of the high potential output MOSFET M19 and the low potential output MOSFET M20, so that the high potential amplified signal is used as the amplified input signal of the high potential output MOSFET M19, and the low potential amplified signal is used as the amplified input signal of the low potential output MOSFET M20, so that the output module 120 realizes the signal output of the transient enhancement buffer 100. Specifically, the prior art has disclosed the specific structure and working principle of the current superposition subcircuit, which should be known to those skilled in the art, and will not be described in detail in this embodiment.

[0112] Furthermore, the superposition circuit also includes a floating current source for providing a constant current to the high potential current mirror and the low potential current mirror, thereby ensuring that the sum of the currents flowing through the current superposition subcircuit is stable, thereby stabilizing the static current of the high potential output MOSFET M19 and the low potential output MOSFET M20, and further stabilizing the output signal of the transient enhancement buffer 100 to a fixed voltage value.

[0113] For ease of understanding, the present embodiment exemplarily provides a structure of the input module 110 .

[0114] like Figure 2As shown, the input signal is connected to the transient enhancement buffer 100 by the high potential differential circuit and the low potential differential circuit. The high potential differential circuit includes a first differential nmos tube M1 and a second differential nmos tube M2 whose sources are connected, and the sources of the first differential nmos tube M1 and the second differential nmos tube M2 are both connected to the high potential terminal VDD, the gates of the first differential nmos tube M1 and the second differential nmos tube M2 are connected to the input terminal of the transient enhancement buffer 100, and the drains of the first differential nmos tube M1 and the second differential nmos tube M2 are connected to the high potential current mirror as the output terminal of the high potential differential signal. The low potential differential circuit includes a first differential pmos tube M3 and a second differential pmos tube M4 whose sources are connected to each other, and the sources of the first differential pmos tube M3 and the second differential pmos tube M4 are both connected to the ground terminal GND, the gates of the first differential pmos tube M3 and the second differential pmos tube M4 are connected to the input terminal of the transient enhancement buffer 100, and the drains of the first differential pmos tube M3 and the second differential pmos tube M4 serve as the output terminal of the low potential differential signal and are connected to the low potential current mirror.

[0115] The high potential current mirror includes: a first current mirror nmos tube M15 whose source is connected to the output end of the first differential nmos tube M1 and whose drain is connected to the floating current source; a second current mirror nmos tube M16 whose source is connected to the output end of the second differential nmos tube M2 and whose drain is connected to the current superposition subcircuit; a third current mirror nmos tube M17 whose source is connected to the ground terminal GND and whose drain is connected to the output end of the first differential nmos tube M1; and a fourth current mirror nmos tube M18 whose source is connected to the ground terminal GND and whose drain is connected to the output end of the second differential nmos tube M2. Among them, the gates of the first current mirror nmos tube M15 and the second current mirror nmos tube M16 are connected, and the gate of the pull-up MOS tube MPU1 is input with the pull-up conduction signal through the pull-up external port VBN2; the gates of the third current mirror nmos tube M17 and the fourth current mirror nmos tube M18 are connected together, and are connected to the gate of the pull-up bias MOS tube MPU2.

[0116] The low potential current mirror includes: a first current mirror pmos tube M9 whose source is connected to the output end of the first differential pmos tube M3 and whose drain is connected to the floating current source; a second current mirror pmos tube M10 whose source is connected to the output end of the second differential pmos tube M4 and whose drain is connected to the current superposition subcircuit; a third current mirror pmos tube M7 whose source is connected to the high potential end VDD and whose drain is connected to the output end of the first differential pmos tube M3; and a fourth current mirror pmos tube M8 whose source is connected to the high potential end VDD and whose drain is connected to the output end of the second differential pmos tube M4. Among them, the gates of the first current mirror pmos tube M9 and the second current mirror pmos tube M10 are connected, and the gate of the pull-down MOS tube MPD2 is input with the pull-down conduction signal through the pull-down external port VBP2; the gates of the third current mirror pmos tube M7 and the fourth current mirror pmos tube M8 are connected, and the gates of the pull-down bias MOS tube MPD2 are connected.

[0117] The floating current source includes a floating current source noms tube M11 and a floating current source poms tube M12, wherein the source of the floating current source noms tube M11 is connected to the drain of the floating current source poms tube M12, and the drain of the floating current source noms tube M11 is connected to the source of the floating current source poms tube M12. The source of the floating current source noms tube M11 and the drain of the floating current source poms tube M12 are connected to a low potential current mirror, and the drain of the floating current source noms tube M11 and the source of the floating current source poms tube M12 are connected to a high potential current mirror.

[0118] The current superposition subcircuit includes a current superposition noms tube M13 and a current superposition poms tube M14, the source of the current superposition noms tube M13 is connected to the drain of the current superposition poms tube M14, the drain of the current superposition noms tube M13 is connected to the source of the current superposition poms tube M14, the gate of the current superposition noms tube M13 is connected to the first current source external port VBP3, and the gate of the current superposition poms tube M14 is connected to the second current source external port VBN3, so that the first current source turn-on signal input by the first current source external port VBP3 and the second current source turn-on signal input by the second current source external port VBN3 control the current flowing through the current superposition subcircuit, thereby realizing the control of the high potential output MOS tube M19 and the low potential output MOS tube M20. The source of the current superimposed noms tube M13 and the drain of the current superimposed poms tube M14 are connected to the low potential current mirror, and the drain of the current superimposed noms tube M13 and the source of the current superimposed poms tube M14 are connected to the high potential current mirror.

[0119] Furthermore, the gates of the floating current source noms tube M11 and the current superposition noms tube M13 are connected, and the first current source turn-on signal is input from the first current source external port VBP3; the floating current source poms tube M12 and the gates of the current superposition poms tube M14 are connected, and the second current source turn-on signal is input from the second current source external port VBN3.

[0120] The transient enhancement buffer 100 provided in the first embodiment of the present invention provides feedback on the fluctuation of the output signal through the transient enhancement module 130, and generates a pull-up coupling signal and a pull-down coupling signal, so that the output module adjusts the output signal, thereby outputting a stable voltage, which is beneficial to improving the stability of the transient enhancement buffer 100.

[0121] like Figures 4 to 6 , which is a schematic diagram of simulation results of the transient enhancement buffer 100 provided in this embodiment.

[0122] like Figure 4 As shown, it is a schematic diagram of the closed-loop response simulation results of the transient enhancement buffer 100 provided in this embodiment, wherein, when the load current range is 0-20mA, the open-loop gain range is 121-138dB, the unit gain frequency is 8.8-13.5MHz, the response speed is fast, the phase margin range is 67.1°-84.6°, and the system is relatively stable.

[0123] like Figure 5 The schematic diagram of the step response simulation results of the transient enhancement buffer 100 proposed in this embodiment and the existing buffer is shown. When the load current rises from 0 to 10mA, the rise time of the transient enhancement buffer 100 proposed in this embodiment is 150ns, the stabilization time is 251ns, and the maximum undershoot voltage is 0.327V. Compared with the buffer in the prior art, the maximum undershoot voltage is reduced by 126mV, and the transient load performance is optimized by 27.8%. When the load current drops from 10mA to 0, the fall time of the transient enhancement buffer 100 proposed in this embodiment is 150ns, the stabilization time is 321ns, the maximum overshoot voltage is 0.28V, and the transient load performance is optimized by 30.7%. Compared with the buffer in the prior art, it has faster response speed, better stability, and consumes only 5μA of static current, while achieving better stability effect, the required energy consumption is small.

[0124] like Figure 6The figure shows the simulation results of 5V and 10V step responses of the transient enhancement buffer 100 proposed in this embodiment. When the input step voltage is 5V and 10V respectively, and the load is 10kΩ and 40pF, the output voltage is basically consistent with the input voltage, and the slew rate is 13.4V / us and 43V / us respectively. The transient enhancement buffer 100 proposed in this embodiment has good output voltage stability, basically no distortion, and fast response speed.

[0125] Table 1 shows the theoretical calculation and simulation results of the chip at 27°C and 5V working voltage, where D1~D8 are input control codes, and VH_IN and VL_IN are high and low voltages input from the chip. In the table, △V1=VH_IN-VL_IN, △V2=VH-VL, △V3=VH-Vlin_H, △V4=Vlin_L-VL. The ideal value and the simulation result are basically consistent, with the maximum deviation being only 0.6mV. The actual application effect of the transient enhancement buffer 100 proposed in this embodiment is good.

[0126]

[0127]

[0128] Table 1.

[0129] Based on the above content, this embodiment provides a transient enhancement buffer 100, which has substantially no distortion in the output signal, good stability, fast response speed, and low energy consumption.

[0130] On the other hand, the present application also provides a gamma voltage generating system 200, such as Figure 7As shown, it includes an amplitude adjustment device 210 and a region division device 220 connected to each other, and a high nonlinear output device 230, a linear output device 240 and a low nonlinear output device 250 respectively connected to the region division device 220. Among them, the amplitude adjustment device 210 is used to generate a high amplitude voltage and a low amplitude voltage by voltage division and amplitude modulation based on the system input signal, the high amplitude voltage is the maximum value of the output gamma voltage, and the low amplitude voltage is the minimum value of the output gamma voltage; the area division device 220 is used to obtain the regional input signal by voltage division based on the high amplitude voltage and the low amplitude voltage, and to amplitude modulate the regional input signal to generate a high linear voltage and a low linear voltage, the high linear voltage is the maximum value of the gamma voltage linear region, and the low linear voltage is the minimum value of the gamma voltage linear region; the linear output device 240 is used to obtain the linear input signal by voltage division based on the high linear voltage and the low linear voltage, and to generate at least one linear voltage based on the linear input signal; the high nonlinear output device 230 is used to obtain the high nonlinear region signal by voltage division based on the high amplitude voltage and the high linear voltage, and to amplitude modulate the high nonlinear region signal to generate at least one high nonlinear voltage; the low nonlinear output device is used to obtain the low nonlinear region signal by voltage division based on the low linear voltage and the low amplitude voltage, and to amplitude modulate the low nonlinear region signal to generate at least one low nonlinear voltage.

[0131] It should be noted that, since the voltage value distribution of the gamma voltage actually conforms to a line segment with a straight line in the middle and curved lines at both ends, the voltage value distribution of the gamma voltage can be divided into three regions: a high nonlinear region, a linear region, and a low nonlinear region. Based on this, in this embodiment, the amplitude adjustment device 210 first outputs a high amplitude voltage and a low amplitude voltage as the maximum and minimum values ​​of the gamma voltage, and then the region division device 220 divides the linear region and the nonlinear region, and finally outputs multiple voltage values ​​through the high nonlinear output device 230, the linear output device 240, and the low nonlinear output device 250, that is, through a two-stage adjustment method of first determining the maximum and minimum values ​​of the gamma voltage and then regulating the intermediate voltage, and a three-region output structure of a high nonlinear region, a linear region, and a low nonlinear region, the voltage value output by the gamma voltage generation system 200 is highly consistent with the voltage value distribution of the gamma voltage. Figure 8 As shown, this embodiment exemplarily outputs 8 voltage values, and the line segments connected by them are highly coincident with the actual curve of the gamma voltage, and the gamma voltage generation system 200 provided by this embodiment has a simple structure and is easy to operate. Based on this, the gamma voltage generation system 200 provided by this embodiment can simply and quickly output voltage values, and the voltage values ​​are highly coincident with the actual gamma voltage. When applied to a display, it is beneficial to improve the display effect of the display, making it more in line with the human sensory system, and is beneficial to the development of the display.

[0132] Furthermore, the amplitude adjustment device 210, the region division device 220, the linear output device 240, the high nonlinear output device 230 and the low nonlinear output device 250 all include the transient enhancement buffer 100 as described above, that is, the high amplitude voltage, the low amplitude voltage, the high linear voltage, the low linear voltage, all linear voltages, all high nonlinear voltages and low nonlinear voltages are buffered and isolated and outputted through the transient enhancement buffer to enhance the stability and accuracy of the voltage output by the gamma voltage generation system 200.

[0133] Specifically, Figure 7 As shown, the amplitude adjustment device 210 also includes an amplitude adjustment resistor 211 and a high amplitude voltage selector 212 and a low amplitude voltage selector 213 respectively connected to the amplitude adjustment resistor 211; the area division device 220 also includes an area division resistor 221 and a high linear voltage selector 222 and a low linear voltage selector 223 respectively connected to the area division resistor 221; the linear output device 240 also includes a linear output resistor 241; the high nonlinear output device 230 also includes a high nonlinear output resistor 231 and at least one high nonlinear voltage selector 232 connected to the high nonlinear output resistor 231; the low nonlinear output device 250 also includes a low nonlinear output resistor 251 and at least one low nonlinear voltage selector 242 connected to the low nonlinear output resistor.

[0134] The amplitude adjustment resistor 211, the region division resistor 221, the high nonlinear output resistor 231, the linear output resistor 241, and the low nonlinear output resistor 251 all have a voltage division structure, which is used to divide the voltage value connected to the two ends of the resistor into several parts. Exemplarily, the amplitude adjustment resistor 211, the region division resistor 221, the high nonlinear output resistor 231, the linear output resistor 241, and the low nonlinear output resistor 251 all have taps for voltage division.

[0135] The high amplitude voltage selector 212, the low amplitude voltage selector 213, the high linear voltage selector 222, the low linear voltage selector 223, all the high non-linear voltage selectors 232 and all the low non-linear voltage selectors 242 can select and process the input signal to generate the corresponding voltage. Exemplarily, the high amplitude voltage selector 212, the low amplitude voltage selector 213, the high linear voltage selector 222, the low linear voltage selector 223, all the high non-linear voltage selectors 232 and all the low non-linear voltage selectors 242 are data selectors, which are connected to the taps on the corresponding resistors to select the voltage value to be output from the multiple voltages.

[0136] Specifically, Figure 7As shown, the system input signal is a displacement voltage signal, the amplitude adjustment resistor 211 divides the system input signal, and draws different voltages from the taps, and the high amplitude voltage selector 212 and the low amplitude voltage selector 213 select the voltage as the output high amplitude voltage and low amplitude voltage through the connected taps. The high amplitude voltage and the low amplitude voltage are output through the corresponding transient enhancement buffer 100. At the same time, the high amplitude voltage and the low amplitude voltage are used as the input of the area division resistor 221, and the high linear voltage and the low linear voltage are obtained by amplitude modulation. For the specific principles and processes, please refer to the above content, which will not be repeated here.

[0137] Similarly, the high nonlinear output device 230 outputs at least one high nonlinear voltage, and the low nonlinear output device 250 outputs at least one low nonlinear voltage. Please refer to the above content for the specific principles and processes, which will not be repeated here.

[0138] It should be noted that the linear output device 240 outputs at least one linear voltage. Since the gamma voltage is distributed in a straight line in the linear region, the linear voltage does not need to be modulated by the data selector. At least one transient enhancement buffer is connected to the tap of the linear output resistor 241 to output the linear voltage.

[0139] Based on this, the present embodiment provides a gamma voltage generating system 200, which uses a two-stage adjustment method of first determining the maximum and minimum values ​​of the gamma voltage and then regulating the intermediate voltage, as well as a three-region output structure of a high nonlinear region, a linear region, and a low nonlinear region. The voltage value output by the gamma voltage generating system 200 is highly consistent with the voltage value distribution of the gamma voltage, and is stably output through a transient enhancement buffer 100. When applied to a display, the brightness of the display is more in line with the human sensory system, which is beneficial to improving the display effect of the display.

[0140] In summary, the transient enhancement buffer and gamma voltage generation system provided by the present application, wherein the transient enhancement buffer 100, through the transient enhancement module 130, feeds back the fluctuation of the output signal, and generates a pull-up coupling signal and a pull-down coupling signal, so that the output module adjusts the output signal, thereby outputting a stable voltage, which is beneficial to improving the stability of the transient enhancement buffer 100. At the same time, the gamma voltage generation system 200 uses a two-stage adjustment method of first determining the maximum and minimum values ​​of the gamma voltage and then regulating the intermediate voltage, as well as a three-region output structure of a high nonlinear region, a linear region, and a low nonlinear region, so that the output voltage value is more accurate and highly coincides with the voltage value distribution of the actual gamma voltage, which is beneficial to improving the display effect of the display.

[0141] The descriptions of the processes or structures corresponding to the above-mentioned figures have different emphases. For parts that are not described in detail in a certain process or structure, please refer to the relevant descriptions of other processes or structures.

[0142] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed in the present application shall still be covered by the claims of the present application.

Claims

1. A transient enhancement buffer, characterized in that: It includes an input module, an output module and a transient enhancement module connected in sequence; The input module is used to amplify the input signal to obtain an amplified signal; The transient enhancement module comprises a signal pull-up unit and a signal pull-down unit, wherein the signal pull-up unit is used to generate a pull-up coupling signal based on a feedback signal, and the signal pull-down unit is used to generate a pull-down coupling signal based on the feedback signal; The output module includes a buffer output end and a high potential output unit and a low potential output unit respectively connected to the buffer output end, the high potential output unit is used to couple and enhance the amplified signal through the pull-up coupling signal to output a high potential enhanced signal, the low potential output unit is used to couple and enhance the amplified signal through the pull-down coupling signal to output a low potential enhanced signal, the buffer output end is used to output an output signal based on the high potential enhanced signal and the low potential enhanced signal, and feed the output signal back to the transient enhancement module as the feedback signal.

2. The transient enhancement buffer according to claim 1, characterized in that The signal pull-up unit comprises a pull-up amplifier circuit and a pull-up signal conversion circuit connected to each other, the pull-up amplifier circuit is used to amplify the feedback signal to obtain a pull-up feedback signal, and the pull-up signal conversion circuit is used to convert the pull-up feedback signal into a pull-up current signal as a pull-up coupling signal; The signal pull-down unit includes a connected pull-down amplifier circuit and a pull-down signal conversion circuit. The pull-down amplifier element is used to amplify the feedback signal to obtain a pull-down feedback signal. The pull-down signal conversion circuit is used to convert the pull-down feedback signal into a pull-down current signal as a pull-down coupling signal.

3. The transient enhancement buffer according to claim 2, characterized in that: The pull-up amplifier circuit includes a pull-up MOS tube, the pull-up signal conversion circuit includes a pull-up capacitor, the source of the pull-up MOS tube is connected to the buffer output end for receiving the feedback signal, the drain of the pull-up MOS tube is connected to one end of the pull-up capacitor, the gate of the pull-up MOS tube inputs a pull-up conduction signal, and the other end of the pull-up capacitor is connected to the input end of the high potential output unit; The pull-down amplifier circuit includes a pull-down MOS tube, and the pull-down signal conversion circuit includes a pull-down capacitor. The source of the pull-down MOS tube is connected to the buffer output end for receiving the feedback signal, the drain of the pull-down MOS tube is connected to one end of the pull-down capacitor, and the gate of the pull-down MOS tube inputs a pull-down turn-on signal; the other end of the pull-down capacitor is connected to the input end of the high potential output unit.

4. The transient enhancement buffer according to claim 2, characterized in that: The signal pull-up unit also includes a pull-up bias circuit connected to the pull-up amplifier circuit, and the pull-up bias circuit is used to provide a bias working voltage for the pull-up amplifier circuit; the signal pull-down unit also includes a pull-down bias circuit connected to the pull-down amplifier circuit, and the pull-down bias circuit is used to provide a bias working voltage for the pull-down amplifier circuit.

5. The transient enhancement buffer according to claim 1, characterized in that: The high potential output unit comprises a high potential signal enhancement circuit and a high potential Miller compensation circuit connected to the high potential signal enhancement circuit, wherein the high potential signal enhancement circuit is used to perform coupling enhancement on the amplified signal through the pull-up coupling signal to obtain a high potential enhancement signal, and the high potential Miller compensation circuit is used to perform signal compensation on the high potential signal enhancement circuit; The low-potential output unit includes a low-potential signal enhancement circuit and a low-potential Miller compensation circuit connected to the low-potential signal enhancement circuit. The low-potential signal enhancement circuit is used to couple and enhance the amplified signal through the pull-down coupling signal to obtain a low-potential enhanced signal. The low-potential Miller compensation circuit is used to perform signal compensation on the low-potential signal enhancement circuit.

6. The transient enhancement buffer according to claim 5, characterized in that: The high potential signal enhancement circuit includes a high potential output MOS tube, the gate of the high potential output MOS tube is respectively connected to the output end of the high potential output unit and the output end of the signal pull-up unit, the drain of the high potential output MOS tube is used as the output end of the high potential signal enhancement circuit, and is connected to the output end of the low potential signal enhancement circuit, and the source of the high potential output MOS tube is connected to the high potential end; the high potential Miller compensation circuit includes a high potential Miller compensation capacitor and a high potential Miller compensation resistor which are sequentially connected between the gate and the drain of the high potential output MOS tube; The low-potential signal enhancement circuit includes a low-potential output MOS tube, the gate of the low-potential output MOS tube is connected to the output end of the low-potential output unit and the output end of the signal pull-up unit, the drain of the low-potential output MOS tube serves as the output end of the low-potential signal enhancement circuit, and is connected to the output end of the high-potential signal enhancement circuit, and the source of the low-potential output MOS tube is connected to the low-potential end; the low-potential Miller compensation circuit includes a low-potential Miller compensation capacitor and a low-potential Miller compensation resistor which are sequentially connected between the gate and drain of the low-potential output MOS tube.

7. The transient enhancement buffer according to claim 1, characterized in that: The input module comprises: a high potential differential circuit and a high potential current mirror connected to the high potential differential circuit, a low potential differential circuit and a low potential current mirror connected to the low potential differential circuit; The high potential differential circuit is used to perform common mode suppression on the input signal in the high potential input signal range and output a high potential differential signal, and the high potential current mirror is used to amplify based on the high potential differential signal and generate a stable high potential amplified signal; the low potential differential circuit is used to perform common mode suppression on the input signal in the low potential input signal range and output a low potential differential signal, and the low potential current mirror is used to amplify based on the low potential differential signal and generate a stable low potential amplified signal; The amplified signal in the high potential output unit is a high potential amplified signal, and the amplified signal in the low potential output unit is a low potential amplified signal.

8. The transient enhancement buffer according to claim 7, characterized in that: The input module also includes a superposition circuit connected between the high-potential current mirror and the low-potential current mirror, the superposition circuit includes a current superposition subcircuit and a floating current source, the floating current source is used to provide a constant current for the high-potential current mirror and the low-potential current mirror, and the current superposition subcircuit controls the static current of the high-potential MOS tube and the low-potential MOS tube to realize the high-potential amplified signal as the amplified input signal of the high-potential MOS tube, and the low-potential amplified signal as the amplified input signal of the low-potential MOS tube.

9. A gamma voltage generating system, characterized in that: It includes an amplitude adjustment device and a region division device connected to each other, and a linear output device, a high nonlinear output device and a low nonlinear output device respectively connected to the region division device; The amplitude adjustment device is used to generate a high amplitude voltage and a low amplitude voltage by performing voltage division and amplitude modulation based on the system input signal; the area division device is used to obtain a regional input signal by performing voltage division based on the high amplitude voltage and the low amplitude voltage, and to perform amplitude modulation on the regional input signal to generate a high linear voltage and a low linear voltage; the linear output device is used to obtain a linear input signal by performing voltage division based on the high linear voltage and the low linear voltage, and to generate at least one linear voltage based on the linear input signal; the high nonlinear output device is used to obtain a high nonlinear regional signal by performing voltage division based on the high amplitude voltage and the high linear voltage, and to perform amplitude modulation on the high nonlinear regional signal to generate at least one high nonlinear voltage; The low nonlinear output device is used to obtain a low nonlinear region signal by voltage division based on the low linear voltage and the low amplitude voltage, and to amplitude modulate the low nonlinear region signal to generate at least one low nonlinear voltage; The amplitude adjustment device, the region division device, the linear output device, the high nonlinear output device and the low nonlinear output device each include at least one transient enhancement buffer according to any one of claims 1 to 7; The high amplitude voltage, the low amplitude voltage, the high linear voltage, all the low linear voltages, all the linear voltages, all the high non-linear voltages and the low non-linear voltage are buffered and output by the transient enhanced buffer.

10. The gamma voltage generating system according to claim 9, characterized in that: The amplitude adjustment device further includes an amplitude adjustment resistor and a high amplitude voltage selector and a low amplitude voltage selector respectively connected to the amplitude adjustment resistor, the amplitude adjustment resistor is used to divide the system input signal to generate an amplitude adjustment signal, the high amplitude voltage selector is used to modulate the amplitude of the amplitude adjustment signal to generate the high amplitude voltage, and the low amplitude voltage selector is used to modulate the amplitude of the amplitude adjustment signal to generate the low amplitude voltage; The area division device further includes an area division resistor and a high linear voltage selector and a low linear voltage selector respectively connected to the area division resistor, the area division resistor is used to generate the area input signal by voltage division based on the high amplitude voltage and the low amplitude voltage, the high linear voltage selector is used to perform amplitude modulation based on the area input signal to generate the high linear voltage, and the low linear voltage selector is used to perform amplitude modulation based on the area input signal to generate the low linear voltage; The linear output device further comprises a linear output resistor, the linear output resistor is used to divide the voltage based on the high linear voltage and the low linear voltage to generate a linear input signal, and to generate at least one linear voltage based on the linear input signal; The high nonlinear output device further comprises a high nonlinear output resistor and at least one high nonlinear voltage selector connected to the high nonlinear output resistor, wherein the high nonlinear output resistor is used to divide the voltage based on the high amplitude voltage and the high linear voltage to generate the high nonlinear region signal, and the high nonlinear voltage selector is used to perform amplitude modulation based on the high nonlinear region signal to generate the high nonlinear voltage; The low nonlinear output device also includes a low nonlinear output resistor and at least one low nonlinear voltage selector connected to the low nonlinear output resistor, the low nonlinear output resistor is used to divide the voltage based on the low amplitude voltage and the low linear voltage to generate the low nonlinear region signal, and the low nonlinear voltage selector is used to perform amplitude modulation based on the low nonlinear region signal to generate the low nonlinear voltage.

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